Magnetic element and manufacturing method thereof, magnetic storage, storage tank element, and identifier

Abstract

The magnetic element comprises: a first ferromagnetic layer; and a first wiring, which is face to face with the first ferromagnetic layer in a first direction, the first wiring having: a wiring portion, which extends in a second direction different from the first direction; and a widening portion, which, when observed from the first direction, is wider in a third direction intersecting the second direction than the wiring portion, and the center position of the wiring portion in the third direction is different from the center position of the first ferromagnetic layer in the third direction.

Description

Technical Field

[0001] The invention relates to a magnetic element, a magnetic memory, a reserve pool element, an identifier and a method for manufacturing the magnetic element. Background Art

[0002] Magnetoresistive elements are expected to be used in magnetic sensors, high-frequency components, magnetic heads, and nonvolatile random access memories (MRAM).

[0003] The magnetoresistance effect element outputs the change in the magnetization direction of the two ferromagnetic layers sandwiching the non-magnetic layer as a change in the resistance of the element. The magnetoresistance effect element controls the magnetization direction of the ferromagnetic layer and records data. As a method of controlling the magnetization direction, it is known to use the magnetic field generated by the current and the spin transfer torque (STT) generated when the current flows in the stacking direction of the magnetoresistance effect element. The method using STT requires a potential difference to be applied in the direction of the non-magnetic layer, which sometimes causes damage to the non-magnetic layer.

[0004] In recent years, as a new way to control the magnetization direction, a method using spin-orbit torque (SOT) has been studied (for example, Patent Document 1). SOT is induced in the ferromagnetic layer through the spin current generated by the spin-orbit interaction or the Raschba effect on the interface of heterogeneous materials. The magnetization in the ferromagnetic layer is reversed by the action of SOT on the magnetization. When a current flows in a direction intersecting the stacking direction of the ferromagnetic layer, a spin current and a Raschba effect are generated. The method using SOT can avoid the flow of a large write current in the stacking direction of the non-magnetic layer and the ferromagnetic layer, and can suppress damage to the non-magnetic layer, etc.

[0005] On the other hand, the writing method using SOT is said to require the symmetry of magnetization for magnetization reversal using an external magnetic field to be disturbed by the structure of the element (for example, non-patent document 1). For example, when the magnetization of the ferromagnetic layer is oriented along the stacking direction (z direction) of the ferromagnetic layer, it is required to apply a magnetic field in the direction (x direction) in which the wiring extends.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Publication No. 2017-216286

[0009] Non-patent literature

[0010] Non-patent literature 1: S. Fukami, T. Anekawa, C. Zhang, and H. Ohno, Nature Nanotechnology, DOI: 10.1038 / NNANO.2016.29. Summary of the invention

[0011] Problems to be solved by the invention

[0012] When a source of external magnetic field is separately provided, the size of the device increases or the manufacturing process becomes complicated. Although the device structure allows magnetization reversal without applying an external magnetic field, there is a problem that the reversal current density increases.

[0013] The present invention has been made in view of the above circumstances, and its object is to provide a magnetic element, a magnetic memory, a reservoir element, an identifier, and a method for manufacturing a magnetic element that can easily perform magnetization reversal.

[0014] Technical solutions to the problem

[0015] In order to solve the above problems, the present disclosure provides the following technical solutions.

[0016] (1) A magnetic element of the first embodiment comprises: a first ferromagnetic layer; and a first wiring, which faces the first ferromagnetic layer in a first direction, the first wiring having: a wiring portion, which extends in a second direction different from the first direction; and a widened portion, which, when viewed from the first direction, is wider in a third direction intersecting the second direction than the wiring portion, and the center position of the wiring portion in the third direction is different from the center position of the first ferromagnetic layer in the third direction.

[0017] (2) In the magnetic element of the above-mentioned method, it is also possible that there is also a cap layer, which faces the first area of ​​the widened portion that does not overlap with the wiring portion when viewed from the first direction, and the cap layer contains any one of the oxides, nitrides, sulfides, and fluorides of the elements that constitute the widened portion.

[0018] (3) In the magnetic element of the above aspect, the spin resistance of the widened portion may be less than the spin resistance of the wiring portion.

[0019] (4) In the magnetic element of the above aspect, the widened portion may include a first region that does not overlap with the wiring portion and a second region that overlaps with the wiring portion, and the second region may be thinner than the first region.

[0020] (5) In the magnetic element of the above aspect, the wiring portion may include a first portion and a second portion spaced apart from each other in the second direction when viewed from the first direction.

[0021] (6) The magnetic element of the above aspect may further include a first magnetic body and a second magnetic body sandwiching the first ferromagnetic layer in at least one of the second direction and the third direction.

[0022] (7) In the magnetic element of the above-described embodiment, the first wiring may include any one of a metal, an alloy, an intermetallic compound, a metal boride, a metal carbide, a metal silicide, and a metal phosphide having a function of generating a spin current by a spin Hall effect when current flows.

[0023] (8) The magnetic element of the above aspect may further include: a second ferromagnetic layer located on the opposite side of the first ferromagnetic layer from the first wiring; and a nonmagnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer.

[0024] (9) A magnetic memory according to a second aspect includes the magnetic element according to the above aspect and wiring connecting a plurality of the magnetic elements.

[0025] (10) A reservoir element of a third aspect includes the magnetic element of the above aspect and a spin conductive layer of the first ferromagnetic layer connecting the plurality of magnetic elements.

[0026] (11) A recognition device according to a fourth aspect includes the reservoir element according to the above aspect and a plurality of sensors for inputting data into the reservoir element.

[0027] (12) The fourth method for manufacturing a magnetic element comprises: a step of forming a soluble mask layer on a portion of a laminated film; a step of processing the laminated film via the mask layer to form a magnetoresistance effect element; a step of forming an insulating layer around the mask layer and the magnetoresistance effect element; and a step of removing the mask layer and locally forming a conductive layer on the portion from which the mask layer has been removed.

[0028] (13) In the method for manufacturing a magnetic element according to the third aspect, the mask layer may be any one selected from the group consisting of Si, SiO 2 , Al 2 O 3 , and a resist.

[0029] Effects of the Invention

[0030] According to the magnetic element, magnetic memory, reservoir element and identifier of the above-mentioned embodiment, the magnetization of the magnetic layer can be easily reversed. In addition, according to the manufacturing method of the magnetic element of the above-mentioned embodiment, the magnetic element that can easily reverse the magnetization of the magnetic layer can be easily manufactured industrially. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a perspective view of the magnetic element according to the first embodiment.

[0032] Figure 2 It is a cross-sectional view of the magnetic element according to the first embodiment.

[0033] Figure 3It is a top view of the magnetic element of the first embodiment.

[0034] Figure 4 This is a cross-sectional view for explaining the method for manufacturing the magnetic element according to the first embodiment.

[0035] Figure 5 This is a cross-sectional view for explaining the method for manufacturing the magnetic element according to the first embodiment.

[0036] Figure 6 This is a cross-sectional view for explaining the method for manufacturing the magnetic element according to the first embodiment.

[0037] Figure 7 This is a cross-sectional view for explaining the method for manufacturing the magnetic element according to the first embodiment.

[0038] Figure 8 This is a cross-sectional view for explaining the method for manufacturing the magnetic element according to the first embodiment.

[0039] Fig. 9 is a cross-sectional view of a magnetic element according to a first modification.

[0040] Fig.10 It is a three-dimensional view of a magnetic element according to a second variation.

[0041] Fig.11 It is a cross-sectional view of a magnetic element according to a third modified example.

[0042] Fig.12 It is a cross-sectional view of a magnetic element according to a fourth variation.

[0043] Fig.13 It is a schematic diagram of a magnetic recording array according to the second embodiment.

[0044] Fig.14 It is a cross-sectional view of a main part of the magnetic recording array according to the second embodiment.

[0045] Fig.15 is a conceptual diagram of a neuromorphic device according to a third embodiment.

[0046] Fig.16 is a schematic diagram of a reservoir element of a third embodiment. DETAILED DESCRIPTION

[0047] Hereinafter, the present embodiment will be described in detail with reference to the accompanying drawings as appropriate. In order to facilitate understanding of the features, the accompanying drawings used in the following description sometimes enlarge the features for convenience, and the dimensional ratios of the various components are often different from the actual ones. The materials, dimensions, etc. illustrated in the following description are examples, and the present invention is not limited thereto, and can be implemented with appropriate changes within the scope of achieving the effects of the present invention.

[0048] First, the directions are defined. The +x direction is a direction in which the first wiring 20 described later extends. The -x direction is a direction opposite to the +x direction. When the +x direction and the -x direction are not distinguished, it is simply referred to as the "x direction". The x direction is an example of a second direction. The +y direction is a direction orthogonal to the x direction. The -y direction is a direction opposite to the +y direction. When the +y direction and the -y direction are not distinguished, it is simply referred to as the "y direction". The y direction is an example of a third direction. The +z direction is the direction in which the layers of the magnetoresistance effect element 10 described later are stacked. The -z direction is a direction opposite to the +z direction. When the +z direction and the -z direction are not distinguished, it is simply referred to as the "z direction". The z direction is an example of a first direction. In the following, the +z direction is sometimes expressed as "up" and the -z direction is sometimes expressed as "down". Up and down are not necessarily consistent with the direction in which gravity acts.

[0049] In this specification, the term "extending in the x direction" means, for example, that the dimension in the x direction is larger than the smallest dimension among the dimensions in the x direction, the y direction, and the z direction. The same applies to the case of extension in other directions. In this specification, the term "connected" is not limited to the case of physical connection, but also includes the case of electrical connection. In this specification, the term "facing" is not limited to the case of two components contacting each other, but also includes the case of other components between the two components.

[0050] [First embodiment]

[0051] Figure 1 It is a perspective view of the magnetic element 100 according to the first embodiment. Figure 2 2 is a cross-sectional view of the magnetic element 100 according to the first embodiment. Figure 2 This is a cross-sectional view of the magnetic element 100 cut along a yz plane passing through the center of the magnetoresistive element 10 in the x direction. Figure 3 It is a top view of the magnetic element 100 according to the first embodiment.

[0052] The magnetic element 100 includes, for example, a magnetoresistance effect element 10, a first wiring 20, a first magnetic body 31, a second magnetic body 32, and insulating layers 41, 42, and 43. The magnetic element 100 is an element that rotates magnetization using spin-orbit torque (SOT), and is sometimes referred to as a spin-orbit torque type magnetization rotation element, a spin-orbit torque type magnetization reversal element, or a spin-orbit torque type magnetoresistance effect element. The magnetic element 100 sometimes also functions as a storage element that stores information based on the orientation direction of magnetization.

[0053] The magnetoresistance effect element 10 faces the first wiring 20. The magnetoresistance effect element 10 is, for example, a cylindrical body that is circular when viewed from the z direction. The shape of the magnetoresistance effect element 10 when viewed from the z direction is not limited to a circle, and may be, for example, an ellipse, a rectangle, etc. The outer circumference or diameter of the magnetoresistance effect element 10 increases, for example, as it moves away from the first wiring 20. The side surface 10s of the magnetoresistance effect element 10 is, for example, inclined toward the x direction or the y direction relative to the z direction.

[0054] The magnetoresistance effect element 10 includes a first ferromagnetic layer 1, a second ferromagnetic layer 2, and a non-magnetic layer 3. The first ferromagnetic layer 1 faces the first wiring 20. The second ferromagnetic layer 2 faces, for example, an electrode 60 (see Fig.14 ). The non-magnetic layer 3 is sandwiched between the first ferromagnetic layer 1 and the second ferromagnetic layer 2.

[0055] The first ferromagnetic layer 1 and the second ferromagnetic layer 2 each have magnetization. When a predetermined external force is applied, the orientation direction of the magnetization of the second ferromagnetic layer 2 is less likely to change than that of the first ferromagnetic layer 1. The first ferromagnetic layer 1 is often referred to as a free magnetization layer, and the second ferromagnetic layer 2 is often referred to as a fixed magnetization layer or a reference magnetization layer. The resistance value of the magnetoresistive effect element 10 changes according to the difference in relative angles between the magnetization of the first ferromagnetic layer 1 and the magnetization of the second ferromagnetic layer 2 sandwiched by the nonmagnetic layer 3. The magnetization of the first ferromagnetic layer 1 and the second ferromagnetic layer 2 is oriented, for example, in the z direction or in any direction within the xy plane.

[0056] The first ferromagnetic layer 1 and the second ferromagnetic layer 2 include a ferromagnetic material. The ferromagnetic material is, for example, a metal selected from the group consisting of Cr, Mn, Co, Fe, and Ni, an alloy containing one of these metals, an alloy containing these metals and at least one element of B, C, and N, etc. The ferromagnetic material is, for example, Co-Fe, Co-Fe-B, Ni-Fe, Co-Ho alloy, Sm-Fe alloy, Fe-Pt alloy, Co-Pt alloy, CoCrPt alloy.

[0057] The first ferromagnetic layer 1 and the second ferromagnetic layer 2 may also contain a Whistler alloy. The Whistler alloy includes an intermetallic compound having a chemical composition of XYZ or X2YZ. X is a transition metal element or a noble metal element of the Co, Fe, Ni or Cu group on the periodic table, Y is a transition metal of the Mn, V, Cr or Ti group or an element type of X, and Z is a typical element of the III group to the V group. Examples of the Whistler alloy are Co2FeSi, Co2FeGe, Co2FeGa, Co2MnSi, Co2Mn 1－a Fe a Al b Si 1－b 、Co2FeGe 1－ c Gac etc. Whistler alloys have high spin polarization.

[0058] The magnetoresistance effect element 10 may also have an antiferromagnetic layer on the surface of the second ferromagnetic layer 2 on the opposite side to the non-magnetic layer 3 via a spacer layer. The second ferromagnetic layer 2, the spacer layer, and the antiferromagnetic layer form a synthetic antiferromagnetic structure (SAF structure). The synthetic antiferromagnetic structure is composed of two magnetic layers sandwiching a non-magnetic layer. Antiferromagnetic coupling is performed between the second ferromagnetic layer 2 and the antiferromagnetic layer, and the coercive force of the second ferromagnetic layer 2 is greater than that without the antiferromagnetic layer. The antiferromagnetic layer is, for example, IrMn, PtMn, etc. The spacer layer, for example, contains at least one selected from the group consisting of Ru, Ir, and Rh.

[0059] The magnetoresistance effect element 10 may include layers other than the first ferromagnetic layer 1 , the second ferromagnetic layer 2 , and the nonmagnetic layer 3 .

[0060] The first wiring 20 extends in the x direction. For example, when viewed from the z direction, the length of the first wiring 20 in the x direction is longer than that in the y direction. The first wiring 20 faces the first ferromagnetic layer 1 of the magnetoresistive element 10. At least a portion of the first wiring 20 sandwiches the first ferromagnetic layer 1 together with the nonmagnetic layer 3 in the z direction.

[0061] The first wiring 20 includes any of metal, alloy, intermetallic compound, metal boride, metal carbide, metal silicide, and metal phosphide having a function of generating a spin current by the spin Hall effect when a current I is passed. The first wiring 20 is sometimes referred to as a spin-orbit torque wiring.

[0062] The spin Hall effect is a phenomenon in which a spin current is induced in a direction orthogonal to the direction of current flow based on the spin-orbit interaction when current flows. The spin Hall effect is similar to the conventional Hall effect in that the moving (moving) charge (electron) bends the direction of movement (movement). The conventional Hall effect is that the direction of movement of charged particles moving in a magnetic field is bent by the Lorentz force. In contrast, the spin Hall effect bends the direction of movement of spins even when there is no magnetic field, just by the movement of electrons (only the flow of current).

[0063] The first wiring 20 generates a spin current by the spin Hall effect when the current I flows. When the current I flows through the first wiring 20, the first spin S1 oriented in one direction and the second spin S2 oriented in the direction opposite to the first spin S1 are bent in a direction orthogonal to the flow direction of the current I by the spin Hall effect. For example, the first spin S1 oriented in the +y direction is bent in the -z direction, and the second spin S2 oriented in the -y direction is bent in the +z direction.

[0064] The number of electrons of the first spin S1 and the second spin S2 generated by the spin Hall effect of a non-magnetic body (non-ferromagnetic material) is equal. That is, the number of electrons of the first spin S1 facing the -z direction is equal to the number of electrons of the second spin S2 facing the +z direction. The first spin S1 and the second spin S2 flow in the direction that eliminates the uneven distribution of spins. In the movement of the first spin S1 and the second spin S2 in the z direction, the flow of charges cancels each other, so the current amount becomes zero. The spin flow without current is particularly called pure spin flow.

[0065] When the flow of electrons with the first spin S1 is represented by J ↑ , the flow of electrons with the second spin S2 is represented by J ↓ , denote the spin current as J S When using J S =J ↑ -J ↓ To define the spin current J S The first spin S1 is injected into the first ferromagnetic layer 1 facing the first wiring 20. The first wiring 20 imparts, to the magnetization of the first ferromagnetic layer 1, for example, SOT capable of reversing only the magnetization of the first ferromagnetic layer 1.

[0066] The first wiring 20 includes a wiring portion 21 and a widened portion 22. The wiring portion 21 is a portion of the first wiring 20. The wiring portion 21 extends in the x direction. The wiring portion 21 connects, for example, two through-hole wirings Cw (see Fig.14 ) The side surface of the wiring portion 21 in the y direction is inclined with respect to the z direction, for example.

[0067] The widening portion 22 is located, for example, between the wiring portion 21 and the first ferromagnetic layer 1 in the z direction. When viewed from the z direction, the width w22 of the widening portion 22 in the y direction is wider than the width w21 of the wiring portion 21. The width w21 of the wiring portion 21 in the y direction is approximately constant regardless of the position in the x direction. When viewed from the z direction, the widening portion 22 protrudes in the y direction. The widening portion 22 is located, for example, at a position overlapping with the magnetoresistance effect element 10 in the z direction. When viewed from the z direction, the widening portion 22 has a first region 22A that does not overlap with the wiring portion 21 and a second region 22B that overlaps with the wiring portion 21. The wiring portion 21 faces the second region 22B.

[0068] The center position 21c of the wiring portion 21 in the y direction is different from the center position 1c of the first ferromagnetic layer 1 in the y direction. Both the center positions 21c and 1c are the centers of the width when viewed from the z direction. In addition, the center of gravity of the wiring portion 21 and the center of gravity of the first ferromagnetic layer 1 are located at different positions in the y direction. The first wiring 20 is asymmetric in the y direction. The thickness of the first wiring 20 varies depending on the position in the y direction. The thickness of the first wiring 20 varies greatly at the boundary position in the y direction between the first region 22A and the second region 22B. The first surface of the first wiring 20 in the +z direction has a step (inflection point) at the boundary position in the y direction between the first region 22A and the second region 22B.

[0069] The main component of the first wiring 20 is preferably a non-magnetic heavy metal. Heavy metal refers to a metal with a specific gravity greater than yttrium (Y). The non-magnetic heavy metal is preferably a non-magnetic metal with an atomic number greater than 39 and having d electrons or f electrons in the outermost layer. The first wiring 20 is, for example, Hf, Ta, or W. The spin-orbit interaction of non-magnetic heavy metals is stronger than that of other metals. The spin Hall effect is generated by the spin-orbit interaction, and it is easy for an uneven distribution of spins to occur in the first wiring 20, and it is easy to generate a spin current J. S .

[0070] The first wiring 20 may also contain a magnetic metal. The magnetic metal is a ferromagnetic metal or an antiferromagnetic metal. The trace amount of magnetic metal contained in the non-magnetic body becomes a scattering factor of the spin. The so-called trace amount is, for example, less than 3% of the total molar ratio of the elements constituting the first wiring 20. When the spin is scattered by the magnetic metal, the spin-orbit interaction is enhanced, and the generation efficiency of the spin current relative to the current is increased.

[0071] The first wiring 20 may also contain a topological insulator. A topological insulator is a material that is an insulator or a high resistor inside but has a spin-polarized metallic state on its surface. A topological insulator generates an internal magnetic field through spin-orbit interaction. Even if there is no external magnetic field, a topological insulator will produce a new topological phase due to the effect of spin-orbit interaction. Topological insulators can efficiently generate pure spin currents through strong spin-orbit interaction and the destruction of inversion symmetry at the edge.

[0072] Topological insulators are SnTe, Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 、TlBiSe2、Bi2Te3、Bi 1－x Sb x 、(Bi 1－ x Sb x )2Te3, etc. Topological insulators can efficiently generate spin currents.

[0073] The wiring portion 21 and the widening portion 22 may also contain different materials. The spin resistance of the widening portion 22 is, for example, less than the spin resistance of the wiring portion 21. Spin resistance is a quantity that quantitatively represents the ease of flow of the spin current (the ease of spin relaxation). The spin resistance Rs is defined by Rs=ρλ / A. λ is the spin diffusion length of the material, ρ is the resistivity of the material, and A is the cross-sectional area of ​​the material. In non-magnetic materials, when the cross-sectional area A is equal, the size of the spin resistance is determined by the value of the spin resistivity, i.e., ρλ.

[0074] At the interface of materials with different spin resistances, reflection (return) of the spin current occurs. That is, only a part of the spin current is injected from the material with a smaller spin resistance to the material with a larger spin resistance. When the spin resistance of the widened portion 22 is smaller than the spin resistance of the wiring portion 21, spins can be effectively supplied to the first ferromagnetic layer 1.

[0075] In addition, for example, the wiring portion 21 and the widened portion 22 are different in polarity of the spin Hall angle. The "spin Hall angle" is one of the indicators of the strength of the spin Hall effect, which indicates the conversion efficiency of the spin current to be generated relative to the current flowing along the first wiring 20. When the polarity of the spin Hall angle is different, the movement directions of the first spin S1 and the second spin S2 in the z direction are opposite. By bringing materials with different polarities of the spin Hall angle into contact, the efficiency of injecting spins into the first ferromagnetic layer 1 can be improved.

[0076] The first magnetic body 31 and the second magnetic body 32 are located so as to sandwich the first ferromagnetic layer 1 in at least one direction of the x-direction and the y-direction. The first magnetic body 31 and the second magnetic body 32 contain magnetic bodies. The first magnetic body 31 and the second magnetic body 32 are, for example, permanent magnets, such as alloys of Co-Cr-Pt, Nd-Fe-B, Sm-Co, Ho-Fe, and Sm-Fe, or ferromagnetic oxides such as ferrite. A magnetic field is generated between the first magnetic body 31 and the second magnetic body 32. When the first magnetic body 31 and the second magnetic body 32 sandwich the first ferromagnetic layer 1 in the x-direction, the first magnetic body 31 and the second magnetic body 32 apply a magnetic field to the first ferromagnetic layer 1 in the x-direction. When the first magnetic body 31 and the second magnetic body 32 sandwich the first ferromagnetic layer 1 in the y-direction, the first magnetic body 31 and the second magnetic body 32 apply a magnetic field to the first ferromagnetic layer 1 in the y-direction.

[0077] The first magnetic body 31 and the second magnetic body 32 are an example of a magnetic field applying mechanism for applying a magnetic field to the first ferromagnetic layer 1. The magnetic field applying mechanism is not limited to the first magnetic body 31 and the second magnetic body 32 as long as it can apply a magnetic field to the first ferromagnetic layer 1. For example, the magnetic field applying mechanism may be an electromagnet type or a strip line type that can variably control the intensity of the applied magnetic field. In addition, an electric field may be applied to the first ferromagnetic layer 1 to convert it into a magnetic field.

[0078] The insulating layers 41, 42, and 43 are insulating layers for insulating between wirings or between elements of the multilayer wiring. The insulating layers 41, 42, and 43 are made of, for example, silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon carbide (SiC), chromium nitride, silicon carbonitride (SiCN), silicon oxynitride (SiON), aluminum oxide (Al2O3), zirconium oxide (ZrO x )wait.

[0079] Next, a method for manufacturing the magnetic element 100 is described. The method for manufacturing the magnetic element 100 includes a step of forming a soluble mask layer on a portion of a laminated film, a step of processing the laminated film via the mask layer to form a magnetoresistance effect element, a step of forming an insulating layer around the mask layer and the magnetoresistance effect element, and a step of removing the mask layer and locally forming a conductive layer on the portion where the mask layer is removed.

[0080] First, if Figure 4 As shown in FIG. 1 , a ferromagnetic layer 80, a non-magnetic layer 81, a ferromagnetic layer 82, and a conductive layer 83 are sequentially stacked to form a laminate. Each layer is formed by, for example, a sputtering method, a chemical vapor deposition method, or the like. The ferromagnetic layer 80 is a layer that becomes the basis of the second ferromagnetic layer 2, the non-magnetic layer 81 is a layer that becomes the basis of the non-magnetic layer 3, the ferromagnetic layer 82 is a layer that becomes the basis of the first ferromagnetic layer 1, and the conductive layer 83 is a layer that becomes the basis of the widened portion 22 of the first wiring 20. The material of each layer is the same as the material of the film after formation.

[0081] Next, a first mask 84 and a second mask 85 are sequentially stacked on a portion of the stack. Each layer is formed by, for example, sputtering, chemical vapor deposition, etc. The first mask 84 can be dissolved in a chemical solution. The first mask 84 is, for example, Si, SiO2, Al2O3, or a resist. The second mask 85 is, for example, Al, Cu, Ta, Ti, Zr, NiCr, a nitride (e.g., TiN, TaN, SiN), or an oxide (e.g., SiO2).

[0082] Next, if Figure 5As shown, the stack is processed via a first mask 84 and a second mask 85. The stack is processed, for example, by ion milling. The second mask 85 is removed, for example, while the stack is being processed. A portion of the second mask 85 may remain. In the case where the second mask 85 remains, the remaining second mask 85 is removed, for example, by chemical mechanical polishing (CMP). The stack is processed to become a magnetoresistance effect element 10. By using the first mask 84 and the second mask 85, the size of the magnetoresistance effect element 10 in the xy plane is miniaturized. When viewed from above in the z direction, the magnetoresistance effect element 10 and the widened portion 22 are processed into, for example, a circle or an ellipse.

[0083] Next, if Figure 5 As shown, an insulating layer 41, a magnetic layer 30, and an insulating layer 42 are sequentially stacked around the magnetoresistance effect element 10, the widened portion 22, and the first mask 84. The magnetic layer 30 forms the first magnetic body 31 and the second magnetic body 32. The first magnetic body 31 and the second magnetic body 32 are electrically insulated from the magnetoresistance effect element 10 by the insulating layer 41.

[0084] Next, if Figure 6 As shown, the first mask 84 is dissolved and removed. The first mask 84 is formed by selecting a chemical solution according to the material of the first mask 84. By removing the first mask 84, a concave portion surrounded by the insulating layer 41 and the widened portion 22 is formed.

[0085] Next, if Figure 6 As shown in FIG. 1 , a resist 86 is formed so that a part of the concave portion is exposed. Next, a conductive film is formed via the resist 86. The conductive film formed in the portion where the resist 86 is not formed becomes the wiring portion 21. The surface of the wiring portion 21 in the z direction is inclined, for example, by the shadow effect of the resist 86. Then, after removing the resist 86, the wiring portion 21 is covered with the insulating layer 43 to obtain Figure 2 The magnetic element 100 is shown.

[0086] In addition, if Figure 7 As shown, after the first mask 84 is dissolved to form a recessed portion, sputtering may be performed from an oblique direction relative to the z direction to form the conductive film 211 in the recessed portion. By performing sputtering from an oblique direction, the conductive film 211 is formed in a part of the recessed portion.

[0087] Next, if Figure 8 As shown in FIG. 2 , a conductive film 212 extending in the x direction is stacked at a position overlapping with the conductive film 211. The conductive films 211 and 212 form the wiring portion 21 of the first wiring 20. Then, by covering the wiring portion 21 with an insulating layer 43, a Figure 2 The magnetic element 100 is shown.

[0088] Next, the function of the magnetic element 100 will be described. The magnetic element 100 can easily reverse the magnetization of the first ferromagnetic layer 1. Furthermore, the magnetic element 100 can stably reverse the magnetization even when no external magnetic field is applied (even in a non-magnetic field environment).

[0089] In the magnetic element 100, since the center position of the wiring portion 21 in the y direction is different from the center position of the first ferromagnetic layer 1 in the y direction, the y-direction symmetry of the intensity of the spin injected into the first ferromagnetic layer 1 is broken. When the y-direction symmetry of the intensity of the spin injected into the first ferromagnetic layer 1 is broken, the magnetization of the first ferromagnetic layer 1 can be given an opportunity for magnetization reversal, and magnetization reversal becomes easy. As a result, magnetization reversal can be achieved even in the absence of a magnetic field.

[0090] When a current I is applied to the first wiring 20, spins are injected into the first ferromagnetic layer 1. The injected spins impart a spin-orbit torque to the magnetization of the first ferromagnetic layer 1, causing magnetization reversal.

[0091] The direction of the spin injected from the first wiring 20 into the first ferromagnetic layer 1 is oriented in the y direction. When the magnetization direction of the first ferromagnetic layer 1 is not oriented in the y direction, the direction of the spin to be injected is orthogonal to the magnetization direction of the first ferromagnetic layer 1. The injected spin imparts a spin-orbit torque to the magnetization of the first ferromagnetic layer 1. The spin-orbit torque acts in such a way that the magnetization of the first ferromagnetic layer 1 is tilted by 90° from the initial state.

[0092] When the intensity of the spin injected into the first ferromagnetic layer 1 is the same at any position in the y direction, the probability of the magnetization reversing from the state tilted by 90° and the probability of returning to the initial state are theoretically 50%, respectively.

[0093] On the other hand, when the strength of the spin injected into the first ferromagnetic layer 1 is different at each position in the y direction of the first ferromagnetic layer 1, the magnitude of the spin-orbit torque received by the magnetization of the first ferromagnetic layer 1 is different at each position in the y direction. In other words, the balance of the force received by the magnetization is disturbed in the y direction.

[0094] The magnetization undergoes magnetization reversal while undergoing precession motion. The precession motion of the magnetization is amplified by the influence of the spin-orbit torque. When the magnitude of the spin-orbit torque to which the magnetization is subjected is different at each position in the y direction of the first ferromagnetic layer 1, the precession motion is disrupted. When the precession motion is disturbed, the balance between the probability of the magnetization reversing from a state tilted by 90° and the probability of returning to the original state is disrupted. As a result, the magnetization tends to select one state, and the magnetization reversal is stabilized.

[0095] The balance of the force in the y direction applied to the magnetization can also be disturbed by applying an external magnetic field, but the magnetic element 100 is structured so as to disturb the balance of the force in the y direction.

[0096] In addition, the current I flowing in the first wiring 20 rapidly spreads in the y direction when it reaches the widened portion 22 from the wiring portion 21. As a result, the current also has a component in the y direction in the widened portion 22. When the current flows in the y direction, spins oriented in the x direction are injected into the first ferromagnetic layer 1. As a result, the balance of the spin-orbit torque on the magnetization of the first ferromagnetic layer 1 is further disturbed in the xy plane, and the magnetization reversal of the first ferromagnetic layer 1 becomes easier.

[0097] An example of the magnetic element 100 according to the first embodiment has been described in detail above, but addition, omission, replacement, and other changes in structure may be made without departing from the spirit of the present invention.

[0098] (First Modification)

[0099] Fig. 9 2 is a cross-sectional view of a magnetic element 101 according to a first modification. Fig. 9 The cross-sectional view is obtained by cutting the magnetic element 101 along the yz plane passing through the center of the magnetoresistive element 10 in the x direction. The magnetic element 101 of the first modified example is different from the magnetic element 101 of the first modified example in that it has a cap layer 50. Figure 2 The magnetic element 100 shown is different. The other structures are the same as those of the magnetic element 100, and the same symbols are used for the same structures, and the description thereof is omitted.

[0100] The cap layer 50 faces a portion of the widening portion 22. The cap layer 50 faces the first surface 22Aa of the first region 22A. On the other hand, the cap layer 50 does not face the first surface 22Ba of the second region 22B. When viewed from the z direction, the first region 22A is a portion of the widening portion 22 that does not overlap with the wiring portion 21, and the second region 22B is a portion of the widening portion 22 that overlaps with the wiring portion 21. The first surfaces 22Aa and 22Ba are both surfaces of the widening portion 22 that are away from the magnetoresistance effect element 10.

[0101] The cap layer 50 contains any of oxides, nitrides, sulfides, and fluorides containing the elements constituting the widened portion 22. The cap layer 50 is Ta2O5, W2O3, or HfO2. The cap layer 50 may be formed by natural oxidation of a part of the widened portion 22, for example.

[0102] In addition, the amount of spin injected from the first region 22A into the first ferromagnetic layer 1 is less than the amount of spin injected from the second region 22B into the first ferromagnetic layer 1. This is because the second region 22B is in contact with the wiring portion 21 and a lot of current flows. The cap layer 50 forms an interface with the first region 22A, and has the effect of increasing the spin current of the first region 22A through the Rashba effect generated by the interface. In addition, the cap layer 50 is preferably an insulator, and the spin current generated by the Rashba effect is difficult to flow into the cap layer 50, which mainly has the effect of increasing the spin current of the first region 22A. By increasing the supply of spins from the first region 22A, into which spins are relatively difficult to be injected, the magnetization reversal of the first ferromagnetic layer 1 can be easily performed.

[0103] Alternatively, the cap layer may be formed on the surface of the wiring portion 21 in the +z direction. In this case, the height positions in the z direction of the cap layer 50 facing the first region 22A and the cap layer facing the wiring portion 21 are different. The cap layer 50 facing the first region 22A is located closer to the first ferromagnetic layer 1 than the cap layer facing the wiring portion 21. Since the cap layer eliminates crystal deformation by the interface effect, the closer the distance between the cap layer and other layers is, the higher the effect of improving crystallinity is.

[0104] (Second Modification)

[0105] Fig.10 2 is a perspective view of a magnetic element 102 according to a second modification. The magnetic element 102 according to the second modification is different from the magnetic element 102 in that the wiring portion 23 is composed of two parts separated in the x direction. Figure 1 The magnetic element 100 shown is different. The other structures are the same as those of the magnetic element 100, and the same symbols are used for the same structures, and the description thereof is omitted.

[0106] The magnetic element 102 includes a magnetoresistance effect element 10 and a first wiring 26. The first wiring 26 includes a widening portion 22 and a wiring portion 23. The wiring portion 23 extends in the x direction. The wiring portion 23 includes a first portion 231 and a second portion 232. When viewed from the z direction, the first portion 231 and the second portion 232 are located at a position overlapping the widening portion 22 and are spaced apart from each other in the x direction. The wiring portion 23 can also be said to be divided into the first portion 231 and the second portion 232. Both the first portion 231 and the second portion 232 are connected to the widening portion 22.

[0107] The current flowing in the x direction in the first wiring 26 flows in the order of the first portion 231, the widened portion 22, and the second portion 232, or in the order of the second portion 232, the widened portion 22, and the first portion 231. The thickness of the widened portion 22 in the z direction is thinner than the thickness of the first portion 231 and the second portion 232, for example. The current density of the widened portion 22 is greater than the current density of the first portion 231 and the second portion 232. By spacing the first portion 231 and the second portion 232 at a position facing the first ferromagnetic layer 1, the current density of the current flowing to the widened portion 22 can be increased. When the magnetization of the first ferromagnetic layer 1 exceeds a predetermined current density, sufficient torque is given, and magnetization reversal is performed. By increasing the current density of the widened portion 22, magnetization reversal of the first ferromagnetic layer 1 can be easily performed.

[0108] (Third Modification)

[0109] Fig.11 4 is a cross-sectional view of a magnetic element 103 according to a third modification. Fig.11 The magnetic element 103 of the third modified example is a cross-sectional view obtained by cutting the magnetic element 103 along the yz plane passing through the center of the magnetoresistive element 10 in the x direction. Figure 2 The magnetic element 100 shown is different. The other structures are the same as those of the magnetic element 100, and the same symbols are used for the same structures, and the description thereof is omitted.

[0110] The magnetic element 103 includes a magnetoresistance effect element 10 and a first wiring 27. The first wiring 27 includes a wiring portion 24 and a widened portion 25. The wiring portion 24 extends in the x direction. When viewed from the z direction, the widened portion 25 protrudes from the wiring portion 24 in the y direction. The widened portion 25 includes a first region 25A that does not overlap with the wiring portion 24 in the z direction and a second region 25B that overlaps with the wiring portion 24 in the z direction. The first surface 25Aa of the first region 25A is closer to the +z direction than the first surface 25Ba of the second region 25B. The thickness h2 of the second region 25B is thinner than the thickness h1 of the first region 25A. The widened portion 25 has a step at the boundary between the first region 25A and the second region 25B. The step is, for example, at Figure 6 It is formed before the stacked wiring portion 21 and when the surface oxide film of the widened portion 22 is removed.

[0111] The wiring portion 24 faces the second region 25B. The amount of spin supplied from the wiring portion 24 to the first ferromagnetic layer 1 increases as the distance between the wiring portion 24 and the first ferromagnetic layer 1 (the thickness h2 of the second region 25B) decreases.

[0112] (Fourth Modification)

[0113] Fig.12FIG. 1 is a cross-sectional view of a magnetic element 104 according to a fourth modification. The magnetic element 104 according to the fourth modification is different from FIG. 1 in that it does not have the nonmagnetic layer 3 and the second ferromagnetic layer 2. Figure 1 The magnetic element 100 shown is different. The other structures are the same as those of the magnetic element 100, and the same symbols are used for the same structures, and the description thereof is omitted.

[0114] The magnetic element 104 can be used alone as an anisotropic magnetic sensor, an optical element using the magnetic Kerr effect, or a magnetic Faraday effect.

[0115] The magnetic element 104 of the fourth variation is similar to the magnetic element 100 except that it does not include the non-magnetic layer 3 and the second ferromagnetic layer 2 , and can improve data writing efficiency.

[0116] Several examples are given to specifically describe the magnetic element of the first embodiment. These examples are only examples of the magnetic element, and the magnetic element is not limited to these examples. For example, the characteristic structures of the first to fourth modified examples can also be combined together.

[0117] [Second embodiment]

[0118] The magnetic elements 100 , 101 , 102 , 103 , and 104 of the first embodiment can be used as, for example, a magnetic recording array. Fig.13 It is a structural diagram of a magnetic recording array 300 according to the second embodiment.

[0119] The magnetic recording array 300 includes a plurality of magnetic elements 100, a plurality of write wirings Wp1 to Wpn, a plurality of common wirings Cm1 to Cmn, a plurality of read wirings Rp1 to Rpn, a plurality of first switching elements 110, a plurality of second switching elements 120, and a plurality of third switching elements 130. The magnetic recording array 300 can be used in a magnetic memory, for example.

[0120] The write wiring Wp1~Wpn electrically connects the power supply and one or more magnetic elements 100. The common wiring Cm1~Cmn is a wiring used by both when writing and reading data. The common wiring Cm1~Cmn electrically connects the reference potential and one or more magnetic elements 100. The reference potential is, for example, grounded. The common wiring Cm1~Cmn can be set for multiple magnetic elements 100 respectively, or can be set across multiple magnetic elements 100. The read wiring Rp1~Rpn electrically connects the power supply and one or more magnetic elements 100. The power supply is connected to the magnetic recording array 300 when in use.

[0121] Fig.13The first switch element 110, the second switch element 120, and the third switch element 130 shown are connected to the plurality of magnetic elements 100, respectively. The first switch element 110 is connected between each magnetic element 100 and the write wirings Wp1 to Wpn. The second switch element 120 is connected between each magnetic element 100 and the common wirings Cm1 to Cmn. The third switch element 130 is connected between each magnetic element 100 and the read wirings Rp1 to Rpn.

[0122] When the first switch element 110 and the second switch element 120 are turned on, a write current flows between the write wirings Wp1 to Wpn and the common wirings Cm1 to Cmn connected to a specified magnetic element 100. When the second switch element 120 and the third switch element 130 are turned on, a read current flows between the common wirings Cm1 to Cmn and the read wirings Rp1 to Rpn connected to a specified magnetic element 100.

[0123] The first switch element 110, the second switch element 120, and the third switch element 130 are all elements for controlling the flow of current. The first switch element 110, the second switch element 120, and the third switch element 130 are, for example, elements that utilize phase change of a crystal layer such as a transistor, an ovonic threshold switch (OTS), elements that utilize changes in energy band structure such as a metal insulator transition (MIT) switch, elements that utilize breakdown voltage such as a Zener diode and an avalanche diode, and elements whose conductivity changes with changes in atomic positions.

[0124] Any of the first switch element 110, the second switch element 120, and the third switch element 130 may be shared by the magnetic element 100 connected to the same wiring. For example, when the first switch element 110 is shared, one first switch element 110 is provided upstream of the write wirings Wp1 to Wpn. For example, when the second switch element 120 is shared, one second switch element 120 is provided upstream of the common wirings Cm1 to Cmn. For example, when the third switch element 130 is shared, one third switch element 130 is provided upstream of the read wirings Rp1 to Rpn.

[0125] Fig.14 It is a cross-sectional view of the semiconductor device 200 constituting the magnetic recording array 300 . Fig.14 This is a cross-sectional view obtained by cutting the magnetic element 100 along an xz plane passing through the width center of the first wiring 20 in the y direction described later. The semiconductor device 200 includes the magnetic element 100 and a plurality of switch elements (a first switch element 110, a second switch element 120, and a third switch element 130) connected to the magnetic element 100. The third switch element 130 does not exist. Fig.14 In the cross section shown, the third switch element 130 is located in the depth direction (-y direction) of the paper. The third switch element 130 is electrically connected to the electrode 60 extending in the y direction. The electrode 60 is a conductor, such as Cu or Al.

[0126] Fig.14 The first switching element 110 and the second switching element 120 shown are transistors Tr. The transistor Tr includes a gate electrode G, a gate insulating film GI, a source region S and a drain region D formed on a substrate Sub. The substrate Sub is, for example, a semiconductor substrate.

[0127] Each transistor Tr is electrically connected to the magnetic element 100 via a plurality of via wirings Cw. The via wirings Cw are made of a conductive material and extend in the z direction.

[0128] The magnetic element 100 and the transistor Tr are electrically separated by the insulating layer 40 in addition to the via wiring Cw. The insulating layer 40 is an insulating layer for insulating between wirings of multilayer wiring or between elements. The insulating layers 41, 42, and 43 are part of the insulating layer 40.

[0129] The magnetic recording array 300 of the second embodiment includes the magnetic element 100 of the first embodiment. Each magnetic element 100 is easy to perform magnetization reversal, and the reversal current density can be reduced. As a result, the power consumption of the magnetic recording array 300 can be reduced. The magnetic element 100 can also be a magnetic element other than the modified example.

[0130] [Third Embodiment]

[0131] The magnetic elements 100, 101, 102, 103, 104 of the first embodiment can be used as a reservoir element, for example. The reservoir element is one of the neuromorphic elements, that is, an element used for a reservoir computer. The neuromorphic element is an element that imitates the human brain through a neural network. The neuromorphic element is used as a recognizer, for example. The recognizer recognizes (image recognition) an input image and classifies it.

[0132] Fig.15 4 is a conceptual diagram of a neuromorphic device 500 according to a third embodiment. The neuromorphic device 500 includes an input unit 401 , a reservoir unit 400 , and an output unit 402 . The input unit 401 and the output unit 402 are connected to the reservoir unit 400 .

[0133] The neuromorphic device 500 compresses the signal input from the input unit 401 by the reservoir device 400, and then weights (learns) the compressed signal by the output unit 402, and outputs the signal to the outside.

[0134] The input unit 401 transmits the signal input from the outside to the reservoir element 400. The input unit 401 includes, for example, a plurality of sensors. The plurality of sensors sense the external information of the neuromorphic element 500 and input the information as a signal to the reservoir element 400. The signal can continuously input the change of the external information to the reservoir element 400 according to the time effect, or it can be divided according to a specified time domain and then input to the reservoir element 400.

[0135] The reservoir element 400 has a plurality of chips Cp. The plurality of chips Cp interact with each other. The signal input to the reservoir element 400 has a lot of information. The much information in the signal is compressed into necessary information through the interaction of the plurality of chips Cp. The compressed signal is transmitted to the output unit 402. The reservoir element 400 does not perform learning. That is, the plurality of chips Cp only interact with each other separately, and the signal transmitted between the plurality of chips Cp is not weighted.

[0136] The output unit 402 receives a signal from the chip Cp of the reservoir element 400. The output unit 402 performs learning. The output unit 402 weights each signal from each chip Cp through learning. The output unit 402 includes, for example, a nonvolatile memory. The nonvolatile memory is, for example, a magnetoresistive element. The output unit 402 outputs a signal to the outside of the neuromorphic element 500.

[0137] The neuromorphic component 500 improves the accuracy of the answer to the question by compressing the data through the reservoir component 400 and weighting the data through the output unit 402.

[0138] In addition, the neuromorphic element 500 is excellent in power consumption. In the neuromorphic element 500, learning is performed only by the output unit 402. Learning is used to adjust the weight of the signal transmitted from each chip Cp. The weight of the signal is determined according to the importance of the signal. When the weight of the signal is adjusted at any time, the circuit between the chips Cp becomes active. The more circuits are activated, the greater the power consumption of the neuromorphic element 500. The neuromorphic element 500 only needs to learn by the output unit 402 in the final stage, and has excellent power consumption.

[0139] Fig.16 4 is a perspective view of a reservoir element according to the third embodiment. The reservoir element 400 includes a through-hole wiring Cw, a first wiring 20 , a first ferromagnetic layer 1 , and a spin conductive layer 410 .

[0140] The spin conductive layer 410 connects, for example, a plurality of first ferromagnetic layers 1. The spin conductive layer 410 is made of, for example, a non-magnetic conductor. The spin conductive layer 410 propagates the spin current that has seeped out from the first ferromagnetic layer 1.

[0141] The spin conduction layer 410 is, for example, a metal or a semiconductor. The metal used in the spin conduction layer 410 is, for example, a metal or an alloy containing any element selected from the group consisting of Cu, Ag, Al, Mg, and Zn. The semiconductor used in the spin conduction layer 410 is, for example, a single element or an alloy of any element selected from the group consisting of Si, Ge, GaAs, and C. For example, Si, Ge, Si-Ge compounds, GaAs, graphene, etc. can be cited.

[0142] When current I flows through the first wiring 20, spins are injected into the first ferromagnetic layer 1, and a spin-orbit torque is applied to the magnetization of the first ferromagnetic layer 1. When a high-frequency current is applied to the first wiring 20, the direction of the spins injected into the first ferromagnetic layer 1 changes, and the magnetization of the first ferromagnetic layer 1 starts to vibrate.

[0143] The spin current reaches the spin conduction layer 410 from the first ferromagnetic layer 1. Since the magnetization of the first ferromagnetic layer 1 is vibrating, the spin current flowing in the spin conduction layer 410 also vibrates in accordance with the magnetization. The spins accumulated at the interface between the first ferromagnetic layer 1 and the spin conduction layer 410 propagate in the spin conduction layer 410 as a spin current.

[0144] The spin currents generated by the magnetization of the two first ferromagnetic layers 1 are combined and interfered in the spin conduction layer 410. The interference of the spin currents affects the magnetization vibration of each first ferromagnetic layer 1, and the magnetization vibration of the two first ferromagnetic layers 1 resonates. The phases of the two magnetization vibrations are synchronized or deviated by half a wavelength (π).

[0145] When the current I applied to the first wiring 20 stops, the magnetization vibration of the first ferromagnetic layer 1 stops. The magnetization of the first ferromagnetic layer 1 after resonance becomes parallel or anti-parallel. When the phases of the two vibrations are synchronized, the directions of the two magnetizations are consistent and parallel. When the phases of the two vibrations deviate by half a wavelength (π), the directions of the two magnetizations become opposite and anti-parallel.

[0146] When the magnetizations of the two first ferromagnetic layers 1 are parallel, the resistance value of the reservoir element 400 is smaller than that of the antiparallel state. For example, when the resistance value of the reservoir element 400 is large (when the two magnetizations are antiparallel), the reservoir element 400 outputs information "1", and when the resistance value is small (when the two magnetizations are parallel), the reservoir element 400 outputs information "0".

[0147] The current I input to the first wiring 20 has various information. For example, the frequency, current density, current amount, etc. of the current I. On the other hand, the reserve cell element 400 outputs the information of "1" and "0" as a resistance value. That is, the reserve cell element 400 of the first embodiment compresses information by converting the vibration of the magnetization of the plurality of first ferromagnetic layers 1 into spin currents and interfering them in the spin conduction layer 410. The first ferromagnetic layer 1 and the Fig.15 Corresponding to the chip Cp.

[0148] The neuromorphic element 500 of the third embodiment includes the magnetic element 100 of the first embodiment. Each magnetic element 100 is easy to perform magnetization reversal, and the reversal current density can be reduced. As a result, the power consumption of the neuromorphic element 500 can be reduced. For example, the magnetic element 100 may be a magnetic element other than the modified example.

[0149] Explanation of symbols

[0150] 1 First ferromagnetic layer

[0151] 1c, 21c Central Location

[0152] 2 Second ferromagnetic layer

[0153] 3 Non-magnetic layer

[0154] 10 Magnetoresistance element

[0155] 20, 26, 27 First wiring

[0156] 21, 23, 24 Wiring section

[0157] 22, 25 Widening section

[0158] 22A, 25A First Area

[0159] 22B, 25B Second Area

[0160] 31. First ferromagnetic substance

[0161] 32 Second ferromagnetic material

[0162] 40, 41, 42, 43 Insulation layer

[0163] 50 Covering layer

[0164] 60 electrodes

[0165] 80, 82 Ferromagnetic layer

[0166] 81 Non-magnetic layer

[0167] 83 Conductive layer

[0168] 84 First Mask

[0169] 85 Second Mask

[0170] 86 Resist

[0171] 100, 101, 102, 103, 104 Magnetic components

[0172] 110 first switching element

[0173] 120 second switching element

[0174] 130 third switching element

[0175] 200 Semiconductor devices

[0176] 211, 212 Conductive film

[0177] 231 Part 1

[0178] 232 Part 2

[0179] 300 Magnetic Recording Array

[0180] 400 Reservoir Components

[0181] 401 Input

[0182] 402 Output

[0183] 410 Spin conduction layer

[0184] 500 Neuromorphic Components

[0185] w21, w22 width

Claims

1. A magnetic element, characterized in that: The magnetic element is an element that uses spin-orbit torque to perform magnetization rotation. The magnetic element has: a first ferromagnetic layer; and a first wiring which faces the first ferromagnetic layer in a first direction and generates a spin current by a spin Hall effect when a current flows; The first wiring has: a wiring portion extending in a second direction different from the first direction; and a widened portion whose width in a third direction intersecting the second direction as viewed from the first direction is wider than that of the wiring portion, The center position of the wiring portion in the third direction is different from the center position of the first ferromagnetic layer in the third direction. The widened portion is located between the wiring portion and the first ferromagnetic layer in the first direction, The invention further comprises a cover layer, the cover layer facing a first area of ​​the widened portion that does not overlap with the wiring portion when viewed from the first direction, The cap layer contains any of an oxide, a nitride, a sulfide, and a fluoride containing an element constituting the widened portion. A Raschib effect is generated at an interface between the cap layer and the first region of the widened portion.

2. The magnetic element according to claim 1, characterized in that: The spin resistance of the widened portion is less than the spin resistance of the wiring portion.

3. The magnetic element according to claim 1, characterized in that: The widened portion includes a first region that does not overlap with the wiring portion and a second region that overlaps with the wiring portion. The thickness of the second region is thinner than that of the first region.

4. The magnetic element according to claim 1, characterized in that: The wiring portion includes a first portion and a second portion spaced apart from each other in the second direction when viewed from the first direction.

5. The magnetic element according to claim 1, characterized in that: The invention further includes a first magnetic body and a second magnetic body sandwiching the first ferromagnetic layer in at least one of the second direction and the third direction.

6. The magnetic element according to claim 1, characterized in that: The first wiring includes any of a metal, an alloy, an intermetallic compound, a metal boride, a metal carbide, a metal silicide, and a metal phosphide having a function of generating a spin current by a spin Hall effect when current flows.

7. The magnetic element according to claim 1, characterized in that: Also available: a second ferromagnetic layer located on the opposite side of the first ferromagnetic layer from the first wiring; and The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer.

8. A magnetic memory, characterized in that: have: A plurality of magnetic elements according to any one of claims 1 to 7; and Wiring connects each of the plurality of magnetic elements.

9. A reservoir element, characterized in that: have: A plurality of magnetic elements according to any one of claims 1 to 7; and A spin conductive layer connects the first ferromagnetic layers of the plurality of magnetic elements.

10. A recognizer, characterized in that: A reservoir element according to claim 9 and a plurality of sensors for inputting data into the reservoir element.

11. A method for manufacturing a magnetic element, characterized in that: The magnetic element is a magnetic element as claimed in any one of claims 1 to 7, The manufacturing method has the following features: A step of forming a soluble mask layer on a portion of the laminate film; a step of processing the stacked film through the mask layer to form a magnetoresistive element; forming an insulating layer around the mask layer and the magnetoresistive effect element; A step of removing the mask layer and locally forming a conductive layer at a portion where the mask layer is removed; and A step of forming an insulator in a portion where the conductive layer is not formed among the portions where the mask layer is removed.

12. The method for manufacturing a magnetic element according to claim 11, characterized in that: The mask layer is any one selected from the group consisting of Si, SiO 2 , Al 2 O 3 , and a resist.

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