Preparation method of aluminum-silicon alloy target blank

Abstract

The invention relates to a preparation method of an aluminum-silicon alloy target blank. The preparation method comprises the following step: putting aluminum-silicon alloy powder into a mold for sintering, wherein the sintering comprises first temperature rise, first heat preservation, second temperature rise, second heat preservation, third temperature rise, third heat preservation, fourth temperature rise, fourth heat preservation, fifth temperature rise, fifth heat preservation and heat preservation and pressure preservation which are carried out in sequence; the temperature of the first heat preservation is 100-120 DEG C; the temperature of the second heat preservation is 200-230 DEG C; the temperature of the third heat preservation is 300-320 DEG C; the temperature of the fourth heat preservation is 380-410 DEG C; and the temperature of the fifth heat preservation is 450-470 DEG C. According to the preparation method provided by the invention, by adopting a specific sintering process and utilizing alternate treatment of heating and heat preservation, the target blank which is not less than 98% in density, free of defects and uniform in microstructure can be prepared, and the produced aluminum-silicon target material has excellent sputtering use performance.

Description

technical field

[0001] The invention relates to the field of target material preparation, in particular to a method for preparing an aluminum-silicon alloy target blank. Background technique

[0002] At present, the aluminum-silicon alloy target with high silicon content is a new type of alloy target. As a good conductor for vacuum sputtering, it can be used in the field of electronic gate materials and electronic thin films. In order to make the aluminum-silicon alloy sputtering target play a good role in vacuum sputtering, it is required that the aluminum-silicon sputtering alloy target has a high density, and the target is complete without internal defects such as pores and looseness, and its internal structure is relatively uniform.

[0003] For example, CN109628897A discloses a method for preparing a high-purity aluminum-silicon alloy sputtering target blank, including: (1) vacuum melting ultra-pure aluminum and high-purity silicon to form an intermediate alloy melt wi...

Examples

Embodiment 1

[0054] This embodiment provides a method for preparing an aluminum-silicon alloy target blank. The preparation method includes: putting aluminum-silicon alloy powder into a mold for sintering;

[0055] The sintering includes the first temperature rise, the first heat preservation, the second temperature rise, the second heat preservation, the third temperature rise, the third heat preservation, the fourth temperature rise, the fourth heat preservation, the fifth temperature rise, the fifth heat preservation and the heat preservation and pressure preservation. ;

[0056] The aluminum-silicon alloy powder is an alloy powder with a particle size of 74-48 μm and containing 50% aluminum-50% silicon in terms of mass percentage. Before the sintering starts, it is put into a mold and then vacuumed to an absolute vacuum of 40Pa;

[0057] The heating rate of the first heating is 6°C; the end temperature of the first heating is the temperature of the first heat preservation, and the temp...

Embodiment 2

[0066] This embodiment provides a method for preparing an aluminum-silicon alloy target blank. The preparation method includes: putting aluminum-silicon alloy powder into a mold for sintering;

[0067] The sintering includes the first temperature rise, the first heat preservation, the second temperature rise, the second heat preservation, the third temperature rise, the third heat preservation, the fourth temperature rise, the fourth heat preservation, the fifth temperature rise, the fifth heat preservation and the heat preservation and pressure preservation. ;

[0068] The aluminum-silicon alloy powder is an alloy powder with a particle size of 48-30 μm and containing 40% aluminum-60% silicon in terms of mass percentage. Before the sintering starts, it is put into a mold and vacuumized to an absolute vacuum of 20Pa;

[0069] The heating rate of the first heating is 5°C; the end temperature of the first heating is the temperature of the first heat preservation, and the tempera...

Embodiment 3

[0078] This embodiment provides a method for preparing an aluminum-silicon alloy target blank. The preparation method includes: putting aluminum-silicon alloy powder into a mold for sintering;

[0079] The sintering includes the first temperature rise, the first heat preservation, the second temperature rise, the second heat preservation, the third temperature rise, the third heat preservation, the fourth temperature rise, the fourth heat preservation, the fifth temperature rise, the fifth heat preservation and the heat preservation and pressure preservation. ;

[0080] The aluminum-silicon alloy powder is an alloy powder with a particle size of 50-20 μm and containing 45% aluminum-55% silicon in terms of mass percentage. Before the sintering starts, it is put into a mold and then vacuumized to an absolute vacuum of 30 Pa;

[0081] The heating rate of the first heating is 7°C; the end temperature of the first heating is the temperature of the first heat preservation, and the t...

technical field

[0001] The invention relates to the field of target material preparation, in particular to a method for preparing an aluminum-silicon alloy target blank. Background technique

[0002] At present, the aluminum-silicon alloy target with high silicon content is a new type of alloy target. As a good conductor for vacuum sputtering, it can be used in the field of electronic gate materials and electronic thin films. In order to make the aluminum-silicon alloy sputtering target play a good role in vacuum sputtering, it is required that the aluminum-silicon sputtering alloy target has a high density, and the target is complete without internal defects such as pores and looseness, and its internal structure is relatively uniform.

[0003] For example, CN109628897A discloses a method for preparing a high-purity aluminum-silicon alloy sputtering target blank, including: (1) vacuum melting ultra-pure aluminum and high-purity silicon to form an intermediate alloy melt wi...

Examples

Embodiment 1

[0054] This embodiment provides a method for preparing an aluminum-silicon alloy target blank. The preparation method includes: putting aluminum-silicon alloy powder into a mold for sintering;

[0055] The sintering includes the first temperature rise, the first heat preservation, the second temperature rise, the second heat preservation, the third temperature rise, the third heat preservation, the fourth temperature rise, the fourth heat preservation, the fifth temperature rise, the fifth heat preservation and the heat preservation and pressure preservation. ;

[0056] The aluminum-silicon alloy powder is an alloy powder with a particle size of 74-48 μm and containing 50% aluminum-50% silicon in terms of mass percentage. Before the sintering starts, it is put into a mold and then vacuumed to an absolute vacuum of 40Pa;

[0057] The heating rate of the first heating is 6°C; the end temperature of the first heating is the temperature of the first heat preservation, and the temp...

Embodiment 2

[0066] This embodiment provides a method for preparing an aluminum-silicon alloy target blank. The preparation method includes: putting aluminum-silicon alloy powder into a mold for sintering;

[0067] The sintering includes the first temperature rise, the first heat preservation, the second temperature rise, the second heat preservation, the third temperature rise, the third heat preservation, the fourth temperature rise, the fourth heat preservation, the fifth temperature rise, the fifth heat preservation and the heat preservation and pressure preservation. ;

[0068] The aluminum-silicon alloy powder is an alloy powder with a particle size of 48-30 μm and containing 40% aluminum-60% silicon in terms of mass percentage. Before the sintering starts, it is put into a mold and vacuumized to an absolute vacuum of 20Pa;

[0069] The heating rate of the first heating is 5°C; the end temperature of the first heating is the temperature of the first heat preservation, and the tempera...

Embodiment 3

[0078] This embodiment provides a method for preparing an aluminum-silicon alloy target blank. The preparation method includes: putting aluminum-silicon alloy powder into a mold for sintering;

[0079] The sintering includes the first temperature rise, the first heat preservation, the second temperature rise, the second heat preservation, the third temperature rise, the third heat preservation, the fourth temperature rise, the fourth heat preservation, the fifth temperature rise, the fifth heat preservation and the heat preservation and pressure preservation. ;

[0080] The aluminum-silicon alloy powder is an alloy powder with a particle size of 50-20 μm and containing 45% aluminum-55% silicon in terms of mass percentage. Before the sintering starts, it is put into a mold and then vacuumized to an absolute vacuum of 30 Pa;

[0081] The heating rate of the first heating is 7°C; the end temperature of the first heating is the temperature of the first heat preservation, and the t...

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