Sensor element for storing rotation or position information

Abstract

The invention relates to a sensor element for storing rotation or position information, comprising a domain wall conductor (1) and a substrate (2). The course of the domain wall conductor (1) is configured to be closed-loop, without crossings and continuous. Furthermore, the domain wall conductor (1) comprises a first region (A) with positive curvature and a second region (B) with negative curvature.

Description

Technical Field

[0001] The present invention relates to a sensor element for storing, for example, rotation or position information for an angle or length measuring device.

[0002] Angle measuring devices are used, for example, as rotary encoders to determine the angular position of two machine parts that can rotate relative to each other. For this purpose, so-called multi-turn angle measuring devices are often used, by which it is possible to determine the absolute position over multiple revolutions.

[0003] Furthermore, length measuring devices are known, in which the linear displacement (Verschiebung) of two machine parts that can be displaced relative to each other is measured. Especially in the case of length measuring devices with relatively large measuring lengths, multiple linear scales or identical graduations are usually arranged in a row. In the case of such length measuring devices, it should be possible to determine the absolute position over the entire measuring length as much as possible.

[0004] Such measuring devices or equipment used in electric drives are often used to determine the relative motion or relative positioning of corresponding machine parts. In this case, the resulting position values ​​are transmitted to servo electronics via a corresponding interface device for controlling the drive. Background Technology

[0005] EP 1 740 909 B1 describes a sensor element for a tachometer, wherein domain walls are present and the sensor element has a special helical shape. Summary of the Invention

[0006] The objective of this invention is to provide a sensor element or storage system that includes domain wall conductors and that is capable of robust operation relative to external influences and can be manufactured relatively economically.

[0007] According to the present invention, this task is solved by the subject matter disclosed herein.

[0008] Sensor elements for actively storing rotational or positional information, in particular, include domain wall conductors and a substrate, wherein the domain wall conductors are oriented on the substrate in a closed, non-intersecting, and continuous manner. Furthermore, the domain wall conductors include at least one first region with positive curvature and at least one second region with negative curvature.

[0009] The term active storage (aktive Speicherung) should be understood as the storage of auxiliary electrical energy that the sensor element in question does not require.

[0010] In conjunction with this invention, domain wall conductors are, in particular, conductor traces (Leiterspuren) or printed wires or nanowires composed of magnetizable materials. Information can be stored in the domain wall conductors in the form of oppositely magnetized regions (domains). Domains are separated by so-called domain walls, which can be shifted by a magnetic field, thus changing the position of the domains. To determine their position, a readout element is arranged, through which the domain or domain wall is moved. The domain wall conductor can therefore also be functionally considered as a shift register.

[0011] The orientation of a domain wall conductor forms a continuous curve, without abrupt changes, spikes, bends, or any other interruptions. Therefore, the term "continuous orientation" should be understood as the orientation of a domain wall conductor that is uniformly formed without sudden changes in direction. Thus, mathematically, the orientation of a domain wall conductor is continuous over its entire length and, in particular, differentiable, such that a unique tangent can be generated at every point along the orientation of the domain wall conductor.

[0012] The non-intersecting orientation of domain wall conductors should be understood in particular as meaning that domain wall conductors do not intersect in their orientation, nor are they guided in overlapping or intersecting manner in different layers.

[0013] Curvature should be understood as the directional variation along the orientation of the domain wall conductor, especially on a flat substrate. In the case of a straight orientation, the curvature is zero because the orientation direction does not change. As long as the curvature is not zero, a curvature with a sign can be defined for the orientation of the domain wall conductor's orientation with respect to the normal bundle (Normalenbündel) of the orientation curve. If the curvature bends in the direction of the unit normal vector field, the curvature is positive, and if the curvature bends in the opposite direction, the curvature is negative. For example, a first region with positive curvature can be called a convex region, and thus a second region with negative curvature can be called a concave region. Mathematically, the orientation of the domain wall conductor therefore has at least one inflection point.

[0014] The sensor element advantageously includes, in particular, a flat substrate, and domain wall conductors are configured as printed wires on the substrate.

[0015] In another configuration of the invention, the width of the domain wall conductor is less than 1000 nm, especially less than 500 nm, and advantageously less than 300 nm.

[0016] The thickness or layer thickness of the domain wall conductor is advantageously less than 200 nm, especially less than 150 nm, and especially less than 60 nm.

[0017] The substrate advantageously has a glass layer and / or a silicon layer. In particular, when the substrate has a silicon layer, the sensor element can be incorporated as part of a CMOS chip.

[0018] According to an advantageous variation, the sensor element further includes readout elements by which the local magnetization state of the domain wall conductors can be determined (at their respective locations). Therefore, the magnetization state of the domain wall conductors can be determined individually by the readout elements. The readout elements are fixedly arranged relative to the domain wall conductors.

[0019] In another configuration of the invention, the domain wall conductor is arranged in a layer between at least one of the readout elements and the substrate. Alternatively or additionally, at least one of the readout elements is arranged in a layer between the substrate and the domain wall conductor.

[0020] The readout element is advantageously configured as a GMR or TMR sensor.

[0021] The sensor element may have multiple domain wall conductors. In this case, the multiple domain wall conductors have different numbers of first regions or different numbers of second regions. Thus, for example, the sensor element may have a first domain wall conductor and a second domain wall conductor, wherein the first domain wall conductor has a first number of first regions and the second domain wall conductor has a second number of first regions.

[0022] The different quantities, namely the quantity of the first region of the first domain wall conductor and the quantity of the first region of the second domain wall conductor, are advantageously coprime. It is well known that the term "coprime" should be understood as meaning that for the quantity (natural number) concerned, there is no natural number other than 1 that can be divided into two numbers.

[0023] According to another aspect, the invention also includes a storage system having a sensor element, a readout element, and a magnetic device. The magnetic device is movable relative to a domain wall conductor in a first direction, thereby causing displacement of the magnetic domains or domain walls.

[0024] The magnetic field generated by the magnetic device is advantageously configured asymmetrically about an axis extending parallel to the first direction. This consideration applies to any conceivable axis extending parallel to the first direction.

[0025] In another configuration of the invention, the magnetic field generated by the magnetic device is advantageously configured symmetrically about an axis extending parallel to the second direction. Here, the second direction is orthogonal to the first direction.

[0026] The axis extending parallel to the first direction and the axis extending parallel to the second direction are located in a plane parallel to the substrate orientation.

[0027] In another configuration of the storage system, the magnetic device is configured as a magnet array having magnets whose poles are arranged offset from each other in a first direction.

[0028] Advantageously, the two magnets, offset from each other in the first direction, have a pole orientation rotated 180°. Therefore, the magnets are arranged such that the line connecting the north and south poles of one magnet is parallel to the line connecting the north and south poles of the other magnet, where the pole orientations of the magnets are opposite. Thus, the offset magnets can be described as being arranged antiparallel to each other, based on their pole orientations.

[0029] In another configuration of the storage system, the magnet array has magnets whose poles are arranged offset from each other in a second direction, wherein the second direction is orthogonal to the first direction.

[0030] Advantageously, two magnets that are offset from each other in the second direction, and especially adjacent to each other, have a pole orientation rotated 180°.

[0031] The orientation of the domain wall conductors is advantageously configured to be axially symmetric. In particular, the relevant axis of symmetry may be parallel to or extend in the second direction.

[0032] The domain wall conductors have an extension in the first direction, and the two magnetic poles have a center distance where the extension is less than the center distance. It is particularly important to understand here the maximum extension of the domain wall conductors in the first direction. The center distance can be, in particular, the distance between the effective centers of the magnet. For example, in the case of a cylindrical rod magnet, the center distance can be considered as the distance between the longitudinal axes of the cylindrical rod magnet.

[0033] The storage system is configured such that it has at least two domain walls, wherein a configuration with four or more domain walls may also be used.

[0034] Advantageous construction schemes of the present invention can be learned from the disclosure of the present invention.

[0035] Further details and advantages of the sensor according to the invention will become apparent from the following description of embodiments with reference to the accompanying drawings. Attached Figure Description

[0036] Figure 1 A top view of the sensor element is shown.

[0037] Figure 2 A detailed view of the domain wall conductors is shown.

[0038] Figure 3 The magnet of the magnetic device is shown.

[0039] Figure 4 A top view of the magnetic device on the carrier plate is shown.

[0040] Figure 5 A top view showing a schematic diagram of a magnetic device with a magnetic field.

[0041] Figure 6 A side view of the scale element according to the first embodiment is shown.

[0042] Figure 7 A top view of the scale element and sensor element according to the first embodiment is shown.

[0043] Figure 8 A schematic view showing sensor elements and a magnetic device in a first relative position.

[0044] Figure 9 A partial view of a domain wall conductor with the drawn domain wall is shown in a first relative position;

[0045] Figure 10 A schematic view showing sensor elements and a magnetic device in a second relative position to each other.

[0046] Figure 11 A partial view of a domain wall conductor with the drawn domain walls is shown in a second relative position.

[0047] Figure 12 A schematic view showing sensor elements and magnetic devices in a third relative position to each other.

[0048] Figure 13 A partial view of a domain wall conductor with the plotted domain wall is shown in a third relative position.

[0049] Figure 14 A schematic view showing sensor elements and magnetic devices in a fourth relative position to each other.

[0050] Figure 15 A partial view of a domain wall conductor with the plotted domain wall is shown in the fourth relative position.

[0051] Figure 16 A schematic view showing sensor elements and magnetic devices in a fifth relative position to each other.

[0052] Figure 17 A partial view of a domain wall conductor with the plotted domain wall is shown in the fifth relative position.

[0053] Figure 18 A schematic view showing sensor elements and magnetic devices in a sixth relative position to each other.

[0054] Figure 19 A partial view of a domain wall conductor with the plotted domain wall is shown in the sixth relative position.

[0055] Figure 20 A view showing a domain wall conductor with the plotted domain walls in another relative position during the second rotation.

[0056] Figure 21 This shows a view of the domain wall conductor with the plotted domain walls in another relative position after the completion of the second rotation.

[0057] Figure 22 This shows a view of the domain wall conductor with the plotted domain walls in another relative position after the completion of the third rotation.

[0058] Figure 23 This shows a view of the domain wall conductor with the plotted domain walls in another relative position after the completion of the fourth rotation.

[0059] Figure 24 A view showing a sensor element with another domain wall conductor is shown.

[0060] Figure 25 A top view of the scale element according to the second embodiment is shown.

[0061] Figure 26 A top view of the scale element according to the third embodiment is shown.

[0062] Figure 27 A top view of a sensor element according to a fourth embodiment is shown.

[0063] Figure 28 A top view of the magnetic device according to the fourth embodiment is shown.

[0064] Figure 29 A side view of a magnetic device with a sensor element according to a fourth embodiment is shown. Detailed Implementation

[0065] exist Figure 1 The image illustrates a sensor element comprising a domain wall conductor 1 and a substrate 2, wherein the domain wall conductor 1 is applied to the substrate 2 in the form of printed wires. In the proposed embodiment, the substrate 2 has a mechanically supported glass layer, wherein the substrate 2 is configured to be planar. Alternatively, the substrate 2 may have a silicon layer, wherein the sensor element can thus be configured as part of a CMOS chip.

[0066] Domain wall conductor 1 comprises a soft magnetic material, such as a Ni-Fe alloy. Domain wall conductor 1 includes a first segment 1.1 and a second segment 1.2, in which the domain wall conductor 1 extends in a relatively narrow loop, and in the second segment 1.2, the domain wall conductor 1 extends in an arc with a relatively large radius. The first segment 1.1 and the second segment 1.2 are directly adjacent to each other, such that the orientation of the domain wall conductor 1 is configured as a closed loop.

[0067] The domain wall conductor 1 has a width X1 in the first direction x and is configured symmetrically about an axis C, which is perpendicular to the first direction x and oriented parallel to the second direction y. In the proposed embodiment, the width X1 is 70 μm, wherein the domain wall conductor 1 extends over 5 mm in the second direction y.

[0068] exist Figure 2 A segment of the domain wall conductor 1 is shown. It is clearly visible that the domain wall conductor 1 includes a first region A with positive curvature and a second region B with negative curvature in its orientation. In other words, if one wants to follow the orientation of the domain wall conductor 1, one will encounter not only segments with right-hand curvature (Rechtskrümmung) but also segments with left-hand curvature (Linkskrümmung). In the orientation of the first segment 1.1, the first region A with positive curvature is followed by the second region B with negative curvature, and then the first region A again, and so on, wherein in the proposed embodiment, the region with the straight orientation of the domain wall conductor 1 lies between the first region A and the second region B. In the second segment 1.2, the sign of the curvature does not change. In the proposed embodiment, the curvature or radius of curvature is configured to be constant there.

[0069] according to Figure 1 The readout element 7 is located in the layer above the domain wall conductor 1. This readout element can be, for example, a GMR sensor or a TMR sensor, by which the magnetization state of the underlying domain wall conductor 1 can be determined. Alternatively, the readout element 7 can also be arranged between the domain wall conductor 1 and the substrate 2.

[0070] If a magnetic field moving relative to domain wall conductor 1 is properly applied to domain wall conductor 1, then domain walls W1 and W2 will shift within or along domain wall conductor 1. To form a suitable magnetic field, a magnetic device 3 is used, which in the proposed embodiment is configured as a magnet array consisting of a plurality of magnets 3.1 to 3.6. Exemplarily, for all magnets 3.1 to 3.6 in… Figure 3Magnet 3.1 is shown. In the proposed embodiment, all magnets 3.1 to 3.6 are constructed identically. Thus, magnets 3.1 to 3.6 are constructed as cylinders, wherein the magnetic poles are arranged along a longitudinal axis of symmetry in the sense of a rod-shaped magnet.

[0071] exist Figure 4 The corresponding magnetic device 3 is shown in the diagram. (Compared to...) Figure 1 Compared to the domain wall conductor 1, the magnetic device 3 is shown on a different scale. Magnets 3.1 to 3.6 are arranged on the carrier 4 in different north-south orientations according to a predetermined pattern. Magnets 3.1 to 3.6 can also be embedded in the carrier 4.

[0072] In particular, magnets 3.1 to 3.3 can be arranged in rows along the first direction x at a distance X2, wherein adjacent magnets 3.1 and 3.2 or 3.2 and 3.3 have opposite pole orientations. Other magnets 3.4 to 3.6 are also arranged in rows staggered along the first direction x at a distance X2 in the second direction y. In the proposed embodiment, the distance X2 is 0.33 mm. Magnet 3.6 is staggered relative to the remaining magnets 3.1 to 3.5 in the second direction y.

[0073] Auxiliary magnetic fields (Stützmagnetfeld) are arranged on both sides of the magnetic device 3 in the x-direction. Therefore, it is possible to determine the appropriate magnetic field based on the magnetic device 3. Figure 5 The magnetic field is shown in a simplified manner, where the large stripe-wide arrows on the left and right sides next to magnets 3.1 to 3.6 should indicate the auxiliary magnetic field. Figure 5 As can be seen, the change in direction of the magnetic field lines results in the formation of rotating or swirling magnetic field lines, in which magnetic field lines are respectively wrapped around a third direction z (see...). Figure 3 Rotation of an axis oriented upwards.

[0074] The magnetic field generated by the magnetic device 3 is asymmetrically configured about an axis Ax extending parallel to the first direction x. In particular, there is no axis parallel to the first direction x that could represent an axis of symmetry. Conversely, the magnetic field generated by the magnetic device 3 is symmetrically configured about an axis Ay extending parallel to the second direction y, such that an axially symmetric magnetic field exists about axis Ay.

[0075] Alternatively, the rod magnet could be positioned in a plane oriented parallel to the first direction x and parallel to the second direction y, as shown here. Figure 5 The North and South Poles shown belong at least partially to the same magnet, and in particular to a magnet located in the xy plane.

[0076] The magnetic device 3 is typically fixed to the scale element 6 or the integral measuring tool (Maßverkörperung). According to... Figure 6 and 7 In the first embodiment, the scale element 6, as the main body, has a substantially annular trommel 6.1. A magnetic device 3, consisting of magnets 3.1 to 3.6 and a carrier 4, is mounted on its outer circumference. Furthermore, the trommel 6.1 has an auxiliary magnet 6.11 in the region of its outer circumference. This auxiliary magnet may, for example, consist of a layer made of a magnetizable material. Magnetization is performed such that the north and south poles are arranged axially offset from each other. In the proposed embodiment, fine graduations 6.12 are applied around the trommel 6.1 in a second direction y, i.e., axially offset from the auxiliary magnets. These fine graduations can be decoded, for example, by an optical scanning device, which is also housed in the housing 5. Alternatively, the magnetic device 3 may also be arranged in the inner circumference of the trommel or hollow shaft.

[0077] The sensor element, namely the domain wall conductor 1, together with the substrate 2, is located within the housing 5 with radial gaps between them. In the proposed embodiment, the housing is fixed, while the column 6.1, together with the magnetic device 3, is rotatably positioned such that when the column 6.1 rotates relative to the magnetic device 3 in the first direction x (or conversely), the magnetic device 3 moves.

[0078] exist Figure 8 The diagram illustrates the magnetic device 3 and the domain wall conductor 1 in their respective first poses. In this pose, the domain walls W1 and W2 are positioned according to... Figure 9 The positions of the domain walls, where (as indicated by symbols) the first domain wall W1 is a so-called head-to-head domain wall, and the second domain wall W2 is a so-called tail-to-tail domain wall. If now the domain wall conductor 1, together with the substrate 2, according to... Figure 8 If the arrow in the diagram moves relative to the magnetic device 3 in the first direction x, then the domain wall conductor 1 is guided to some extent (quasi) through the rotating magnetic field (e.g. Figure 5 (As shown in the diagram). Therefore, the domain walls W1 and W2 are displaced.

[0079] exist Figure 10 The diagram shows a domain wall conductor 1 in another orientation, where the magnetic field rotates relative to the first orientation. Correspondingly, domain walls W1 and W2 have changed their positions. Figure 11 ).

[0080] Similarly, due to the further displacement of domain wall conductor 1 along the first direction x ( Figure 12 , 14 16, 18), the positions of domain walls W1 and W2 were further shifted ( Figure 13 , 15(17, 19). According to Figure 19 The positions of the domain walls W1 and W2 contain information such as: column 6.1 has completed its first rotation.

[0081] When moved or rotated further in the same direction, the domain wall conductor 1 remains under the influence of the auxiliary magnetic field, so that the positions of the domain walls W1 and W2 no longer change.

[0082] In the proposed embodiment, the column 6.1 should be further rotated in the same direction x, so that the domain wall conductor 1 returns to the magnetic influence region of the magnetic device 3 at the end of the second rotation. During the second rotation, the positions of the domain walls W1 and W2 are... Figure 20 As shown, the domain wall conductor 1 and the substrate 2 are together in accordance with Figure 14 In the pose (however, the column 6.1 then rotates further by 360°). In particular, the domain walls W1, W2 are displaced along the length of the second segment 1.2 by the magnetic field or auxiliary field of the magnets 3.6, which are staggered in the second direction y, in which the domain wall conductor 1 extends in an arc with a relatively large radius. At the end of the second rotation, if the domain wall conductor 1 is in the position according to Figure 18 The position (about) Figure 18 In the case of columnar object 6.1, which rotated further by 360°, the domain walls W1 and W2 adopted the following... Figure 21 The location.

[0083] After the third rotation of columnar section 6.1, the positions of domain walls W1 and W2 are... Figure 22 As shown in the diagram. In this state, the domain wall conductor 1 is in accordance with... Figure 18 In the pose (however, column 6.1 then rotated further by 720°).

[0084] Therefore, according to Figure 23 The positions of domain walls W1 and W2 indicate that columnar structure 6.1 has completed its fourth rotation (however, as in Figure 18 In that case, the pose of columnar object 6.1 was further rotated by 1080°. The positions of domain walls W1 and W2 correspond to the positions in the initial state.

[0085] Therefore, after each pass of the magnetic device 3 or after each rotation of the column 6.1, the domain wall W1 has moved further to the adjacent first region A of the domain wall conductor 1. Correspondingly, after each rotation, the domain wall W2 has moved further to the adjacent second region B of the domain wall conductor 1, or the domain wall is located in the second segment 1.2, in which the domain wall conductor 1 extends in an arc with a relatively large radius.

[0086] The magnetization direction within the segment of domain wall conductor 1, and thus the approximate positions of domain walls W1 and W2, can be detected by readout element 7. In this way, even if auxiliary power is unavailable, it is possible to count or store rotation information. This is important when the shaft moves due to a power failure, for example, due to gravitational load. Furthermore, shifting the domain walls W1 and W2 in relation to the direction of rotation allows for reliable use of the sensor element in applications that allow for two directions of rotation.

[0087] To increase the number of countable rotations, multiple domain wall conductors 1 can be set, as shown in this example. Figure 24 The diagram is shown in a simplified manner. In this case, it is advantageous if the multiple domain wall conductors 1 have different numbers of first segments 1.1, particularly different numbers of first regions A or different numbers of second regions B. When using multiple domain wall conductors 1, it is advantageous that the number of first regions A is, in particular, coprime. The multiple domain wall conductors 1 can be arranged staggered or interleaved with each other in the first direction x. Figure 24 In the configuration, the domain wall conductor is configured such that the domain wall conductor has four and five first regions A, wherein, for clarity, in Figure 24 The diagram shows a domain wall conductor with a relatively small number of first regions. In practice, it is suitable to use domain wall conductors with more than four first regions. For example, four domain wall conductors with 7, 9, 11, or 13 first regions can be used, resulting in a countable 9009 (7 x 9 x 11 x 13) rotations.

[0088] For the functionality of the storage system, it is important that the magnetic field acts on the domain wall conductor 1 as the magnetic device 3 is passed along the first direction x, and the direction of the magnetic field varies depending on the position x. Specifically, there are rotating or swirling magnetic field lines or directions during the passage. During passage (without direction change), the magnetic field lines on one side of the axis Ax ( Figure 5 It has the opposite direction of rotation compared to the magnetic field lines on the other side of the axis Ax.

[0089] exist Figure 25 The second embodiment is shown in the figure. Here, the magnetic device 3 is fastened to the end face of the column 6.2. The sensor elements, not shown in the figure, are axially offset, i.e., arranged with gaps that have axial expansion. Each time the magnetic device 3 passes over the sensor element, the rotation information is updated, wherein the domain walls W1 and W2 are shifted in relation to the direction of rotation.

[0090] according to Figure 26 The third embodiment is described. In this embodiment, the sensor element is used in conjunction with a linear scale 6.3. In the proposed embodiment, the scale 6.3 includes a first scale portion 6.31 and a second scale portion 6.32. The first scale portion 6.31 and the second scale portion 6.32 are arranged in a row along a first direction x, allowing for a relatively large measurement length. In fact, more than two scale portions can also be arranged in a row. The first scale portion 6.31 includes an auxiliary magnet 6.311, and the second scale portion 6.32 includes an auxiliary magnet 6.321. A magnetic device 3 is laterally offset from the auxiliary magnets 6.311 and 6.321 in the first direction x. Figure 26 The scanning head, not shown, has a sensor element with a domain wall conductor 1 and a scanning device with incremental trajectories 6.313, 6.323 and absolute trajectories 6.312, 6.322 (the incremental trajectories 6.313, 6.323 and the absolute trajectories 6.312, 6.322 extend over two scale portions 6.31, 6.32). Position information can be stored through the sensor element, making it possible to determine which of the scale portions 6.31, 6.32 is being scanned.

[0091] According to Figures 27 to 29 The fourth embodiment is described. Figure 27 The figure shows a sensor element having a domain wall conductor 1' modified relative to the previous embodiment, the domain wall conductor 1' extending about a central rotation point (the readout element is omitted from the figure). To displace the domain walls, a magnetic device 3' is exemplarily used, the magnetic device 3' according to... Figure 28 The system includes two disc-shaped magnets 3.1' and 3.2', which have different diameters. Magnets 3.1' and 3.2' have exactly opposite (diametrale) magnetizations, such that their poles are arranged radially offset from each other. Magnets 3.1' and 3.2' are arranged offset from each other along axis G (i.e., axially), wherein their pole orientations are twisted 180° about axis G. Magnets 3.1' and 3.2' are themselves fixed to each other in a respective storage system and therefore cannot be twisted or arbitrarily displaced from each other. Figure 29As shown, the distance g1 between the domain wall conductor 1' or substrate 2 and the magnet 3.1' with a larger diameter is greater than the distance g2 between the domain wall conductor 1' or substrate 2 and the magnet 3.2' with a smaller diameter (g1>g2). In this way, a magnetic field can be generated, and appropriate displacement of the domain wall is achieved by the magnetic field when the domain wall conductor 1' or substrate 2 rotates relative to the magnetic device 3' about axis G or moves relative to the magnetic device 3' along the first direction x'. Thus, the number of rotations of the substrate 2 relative to the magnetic device 3' can be counted.

Claims

1. A sensor element for storing rotation or position information, the sensor element comprising a domain wall conductor (1; 1') and a substrate (2), wherein the domain wall conductor (1; 1') is disposed on the substrate (2), wherein the orientation of the domain wall conductor (1; 1') is configured to be closed, non-intersecting and continuous, and further wherein the domain wall conductor (1; 1') comprises a first region (A) having positive curvature and a second region (B) having negative curvature.

2. The sensor element according to claim 1, wherein the domain wall conductors (1; 1') are configured as printed wires on the substrate (2).

3. The sensor element according to claim 1, wherein the width (D) of the domain wall conductor (1; 1') is less than 1000 nm.

4. The sensor element according to claim 1, wherein the substrate (2) has a glass layer and / or a silicon layer.

5. The sensor element according to claim 1, wherein the sensor element further comprises a readout element (7) by which the local magnetization state of the domain wall conductor (1; 1') can be determined.

6. The sensor element according to claim 5, wherein the domain wall conductors (1; 1') are arranged in a layer between at least one readout element (7) and the substrate (2).

7. The sensor element according to claim 5, wherein at least one readout element (7) is disposed in a layer between the substrate (2) and the domain wall conductor (1).

8. The sensor element according to any one of claims 5 to 6, wherein the readout element (7) is configured as a GMR or TMR sensor.

9. The sensor element according to any one of claims 1-6, wherein the sensor element has a plurality of domain wall conductors (1; 1'), the domain wall conductors having a different number of first regions (A) or a different number of second regions (B).

10. The sensor element according to claim 9, wherein the different numbers of the first region (A) are coprime.

11. A storage system comprising a sensor element according to any one of claims 5 to 10 and a magnetic device (3; 3') movable relative to the domain wall conductor (1; 1') in a first direction (x; x').

12. The storage system according to claim 11, characterized in that, The magnetic device (3) is configured as a magnet array having magnets (3.1 to 3.6) whose poles are arranged staggered from each other in the first direction (x).

13. The storage system of claim 12, wherein the poles of the magnets (3.1 to 3.6) are arranged staggered from each other in a second direction (y), wherein the second direction (y) is orthogonal to the first direction (x).

14. The storage system according to any one of claims 11 to 12, wherein in the first direction (x), the domain wall conductor (1) has an extension (X1), and the two magnetic poles of the magnetic device (3) have a center distance (X2), wherein the extension (X1) is smaller than the center distance (X2).

15. The storage system according to any one of claims 11 to 12, wherein an auxiliary magnet (6.11) is arranged next to the magnetic device (3) about the first direction (x).

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