Fixture, processing system and processing method

Abstract

A fixture is provided for improving the accuracy of luminescence intensity analysis. The fixture includes: a base; multiple light sources disposed on the base and emitting light of different wavelengths; a control unit disposed on the base and activating or deactivating the multiple light sources based on a given program; and a power supply unit disposed on the base and supplying power to the multiple light sources and the control unit. The fixture is shaped so as to be transportable by a transport device disposed in a transport chamber for transporting substrates to be processed.

Description

Technical Field

[0001] The present disclosure relates to a fixture, a processing system, and a processing method. Background Art

[0002] Patent Document 1 discloses a plasma processing apparatus that connects a light emission spectrometer to a chamber and monitors and controls the process by analyzing the intensity of the spectrum generated in the chamber. Patent Document 2 discloses a system that calibrates the apparatus by placing an optical calibration device containing a continuous-spectrum light source, such as a xenon flash lamp, within the chamber.

[0003] <Prior Art Literature>

[0004] <Patent Document>

[0005] Patent Document 1: (Japanese) Patent Publication No. 2011-517097

[0006] Patent Document 2: (Japanese) Patent Publication No. 2018-91836 Summary of the Invention

[0007] <Problems to be Solved by the Invention>

[0008] The present disclosure provides a technology for improving the analysis accuracy of luminescence intensity.

[0009] <Methods used to solve the problem>

[0010] According to one embodiment of the present disclosure, there is provided a clamp comprising: a base; a plurality of light sources disposed on the base and emitting light of different wavelengths; a control unit disposed on the base and lighting or extinguishing the plurality of light sources based on a given program; and a power supply unit disposed on the base and supplying power to the plurality of light sources and the control unit, wherein the clamp is shaped so as to be transported by a transport device disposed in a transport chamber for transporting a processed substrate.

[0011] <Effects of the Invention>

[0012] According to one aspect, the analysis accuracy of the luminescence intensity can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a schematic cross-sectional view showing one example of a clamp according to the embodiment.

[0014] Figure 2 is a diagram illustrating one example of a plasma processing apparatus according to an embodiment.

[0015] Figure 3is a diagram illustrating an example of a semiconductor manufacturing apparatus according to an embodiment.

[0016] Figure 4 This is a diagram showing an example of the hardware configuration of a processing system and each device according to an embodiment.

[0017] Figure 5 This is a diagram showing an example of the hardware configuration of a processing system and each device according to an embodiment.

[0018] Figure 6 It is a diagram showing an example of the operation of the processing system according to the embodiment.

[0019] Figure 7 is a diagram showing an example of reference data according to an embodiment.

[0020] Figure 8 FIG. 1 is a diagram illustrating an example of the operation of the light emission spectrometer according to the embodiment.

[0021] Figure 9 It is a diagram showing an example of the operation of the processing system according to the embodiment.

[0022] Figure 10 is a diagram illustrating another example of analysis performed using the processing system according to the embodiment.

[0023] Figure 11 is a schematic cross-sectional view showing another example of the clamp according to the embodiment. DETAILED DESCRIPTION

[0024] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In each of the drawings, the same components are given the same reference numerals, and overlapping descriptions may be omitted.

[0025] [Fixture]

[0026] First, refer to Figure 1 The jig LW according to the embodiment will be described. Figure 1 1 is a schematic cross-sectional view showing an example of a jig LW according to an embodiment. The jig LW includes a base 11, a control substrate 12, a plurality of light sources 13a to 13d (the light sources are also collectively referred to as "light sources 13"), a battery 19, and a plurality of temperature sensors 14a to 14d (also collectively referred to as "temperature sensors 14").

[0027] The base 11 is a substrate for evaluation (e.g., bareSi) taking a disc-shaped wafer as an example, and is distinguished from a substrate to be processed (product substrate). However, the base 11 is not limited to a disc shape, and is not limited to polygonal, elliptical, or other shapes as long as it can be transported by a transport device for transporting the substrate to be processed. Therefore, since the clamp LW is in a shape that can be transported by a transport device provided in a transport chamber in a processing system to be described later, the clamp LW can be transported between a given device such as a plasma processing device and a transport chamber in a manner that does not destroy the vacuum. Examples of the material of the substrate include silicon, carbon fiber, quartz glass, silicon carbide, silicon nitride, and aluminum oxide. The material of the substrate is preferably a material having electrical conductivity and thermal conductivity.

[0028] The control substrate 12 is a circuit substrate disposed on the base 11 , and includes light sources 13 a to 13 d , temperature sensors 14 a to 14 d , a connector 21 , and a control circuit 200 .

[0029] Light sources 13a to 13d are arranged on the control substrate 12 on the base 11. Light sources 13a, 13b, 13c, and 13d each emit light of a different wavelength (i.e., a different color). The four light sources 13a emit light of the same wavelength and are arranged side by side. The four light sources 13b emit light of the same wavelength and are arranged side by side. The four light sources 13c emit light of the same wavelength and are arranged side by side. The four light sources 13d emit light of the same wavelength and are arranged side by side.

[0030] By arranging light sources 13 emitting light of the same wavelength side by side in groups of four, the amount of light at each wavelength is increased. This allows the luminescence spectrometer 100, mounted on the window of the calibration device or reference device, to easily receive light of each wavelength through the window. However, the number of light sources 13 emitting light of each wavelength is not limited to four; it can be more than one. Light sources 13a, 13b, 13c, and 13d are arranged separately from each other. Furthermore, the number of light sources emitting light of the same wavelength in each light source 13a, 13b, 13c, and 13d is not limited to multiple; as long as the light intensity is sufficient, it can be one. In this case, light sources 13a, 13b, 13c, and 13d can be arranged side by side.

[0031] The light sources 13a to 13d are preferably arranged along the outermost periphery of the base 11. This makes it easier for the emission spectrometer 100 to receive light output from the light sources 13a to 13d. However, there are no particular restrictions on the arrangement of the multiple light sources 13a to 13d as long as they are arranged on the control substrate 12.

[0032] The light sources 13a to 13d are preferably LEDs (light emitting diodes) or OLEDs (Organic light emitting diodes) (see Figure 4 ).

[0033] In the jig LW according to the embodiment, by using LEDs or OLEDs as light sources 13a to 13d, it is possible to prevent a decrease in light intensity over time due to use, and to prevent a decrease in the accuracy of analysis performed by the light emission spectrometry device 100. Furthermore, by using LEDs or OLEDs, the jig LW can be miniaturized.

[0034] The wavelengths of the multiple light sources 13a to 13d are preferably within the range of 200 nm to 850 nm. The light output from the light sources 13a to 13d is not limited to visible light and may also be ultraviolet light or infrared light. It should be noted that the light source 13 can be configured to output light of various wavelengths (colors) by combining it with a white LED, for example.

[0035] Light sources 13a-13d are each rotated and transported to a position close to the window of the chamber in which the light emission spectrometer 100 is installed. This facilitates the light emission spectrometer 100 to receive the individual beams. It should be noted that a notch 22 is formed on the edge of the base 11, and this notch allows for control of the rotation of the jig LW, which is transported by the alignment device described later.

[0036] Temperature sensors 14a to 14d are arranged one-to-one near each of the light sources 13a to 13d. Temperature sensor 14a measures the ambient temperature of light source 13a. Temperature sensor 14b measures the ambient temperature of light source 13b. Temperature sensor 14c measures the ambient temperature of light source 13c. Temperature sensor 14d measures the ambient temperature of light source 13d.

[0037] The control circuit 200 is arranged on the control substrate 12 on the base 11, and includes a microcomputer 15, a memory 16, and a charging circuit 18 (see Figure 4 、 Figure 5 ) and turns on and off light sources 13a-13d based on a given program. The control circuit 200 functions as a control unit for controlling various components of the jig LW. For example, the control circuit 200 controls the turning on and off of each of the light sources 13a-13d. The control circuit 200 can also control communications with other devices.

[0038] Connector 21 is used to connect to an external power source and charge the battery. Four batteries 19 are arranged on base 11. Batteries 19 supply power to light sources 13a-13d and control circuit 200. Batteries 19 are one example of a power supply unit used to supply power to multiple light sources and the control unit. The number of batteries 19 is not limited to four, as long as the number can withstand the maximum current of light sources 13a-13d.

[0039] The jig LW is provided with an acceleration sensor 17. The acceleration sensor 17 detects the inclination of the jig LW and the transport operation within the device.

[0040] [Plasma processing equipment]

[0041] The jig LW having this structure can be transported to a plasma processing apparatus for performing substrate processing such as etching processing and film formation processing. Figure 2 1 is a diagram showing an example of a plasma processing apparatus 10 according to an embodiment. The plasma processing apparatus 10 shows an example of a plasma generating system for exciting plasma from a process gas.

[0042] Figure 2 The plasma processing apparatus 10 shows a capacitively coupled plasma (CCP) apparatus, in which plasma P is formed between a chamber 2, an upper electrode 3, and a stage ST. The stage ST has a lower electrode 4 and an electrostatic chuck 5. In this process, the substrate to be processed is held on the lower electrode 4. A window 101 for transmitting light is provided in the chamber 2, and a light emission spectrometer 100 is connected to the window 101 via an optical fiber 102. When the light emission intensity of the plasma is analyzed by the light emission spectrometer 100, the substrate to be processed is held on the lower electrode 4. An RF (radio frequency) source 6 and an RF source 7 are coupled to both the upper electrode 3 and the lower electrode 4, and different RF frequencies can be used. In another example, the RF source 6 and the RF source 7 can be coupled to the same electrode. In addition, direct current (DC) power can be coupled to the upper electrode. A gas source 8 is connected to the chamber 2 to supply processing gas. In addition, an exhaust device 9 is connected to the chamber 2 to exhaust the interior of the chamber 2.

[0043] Figure 2 The plasma processing apparatus includes an EC (Equipment Controller) 180 including a processor and a memory, and controls each element of the plasma processing apparatus 10 to perform plasma processing on a substrate.

[0044] [Semiconductor manufacturing equipment]

[0045] Next, refer to Figure 3A semiconductor manufacturing apparatus 30 including the plasma processing apparatus 10 will be described. Figure 3 FIG. 1 is a diagram showing an example of a semiconductor manufacturing apparatus 30 according to an embodiment. The semiconductor manufacturing apparatus 30 has four Figure 2 The plasma processing apparatuses 10 of the structure shown are respectively denoted as plasma processing apparatuses 10a to 10d.

[0046] The semiconductor manufacturing apparatus 30 includes chambers 2a to 2d (also collectively referred to as “chamber 2”) respectively arranged in plasma processing apparatuses 10a to 10d, a transfer chamber VTM, two load lock chambers LLM, a loader module LM, an alignment device ORT, three load ports LP, and a machine controller (MC) 181.

[0047] Chambers 2a-2d are arranged side by side, in pairs, on opposing sides of the transfer chamber VTM. They perform predetermined processes on substrates. Chambers 2a-2d are openably and closably connected to the transfer chamber VTM via gate valves V. The interiors of chambers 2a-2d are depressurized, creating a vacuum atmosphere.

[0048] Inside the transfer chamber VTM, a transfer apparatus VA is located for transporting substrates to be processed. The transfer apparatus VA holds substrates to be processed on the top picker and transfers substrates to and from the chambers 2a-2d and the load lock chamber LLM. The transfer apparatus VA can also hold fixtures LW on the top picker and transfer fixtures LW to and from the chambers 2a-2d and the load lock chamber LLM.

[0049] The load lock chamber LLM is provided between the transfer chamber VTM and the loader module LM. The load lock chamber LLM switches between an air atmosphere and a vacuum atmosphere to transfer a substrate to be processed between the air space of the loader module LM and the vacuum space of the transfer chamber VTM.

[0050] The interior of the loader module LM is kept clean by downward airflow, and three load ports LP are located on its sidewalls. A FOUP (Front Opening Unified Pod) containing, for example, 25 substrates to be processed, or an empty FOUP, is mounted on each load port LP. Substrates to be processed are transferred from the load ports LP to chambers 2a through 2d, and after processing, they are transferred from chambers 2a through 2d back to the load ports LP.

[0051] Inside the loader module LM, a transfer device LA is located for transporting substrates. The transfer device LA holds substrates on the top picker and transfers them between the FOUP and the load lock chamber LLM. The transfer device LA can also hold fixtures LW on the top picker and transfer fixtures LW between chambers 2a-2d and the load lock chamber LLM.

[0052] The loader module LM is provided with an alignment device ORT for aligning the position of the substrate being processed. The alignment device ORT is arranged, for example, at one end of the loader module LM. The alignment device ORT detects the center position, eccentricity, and cutout position of the substrate being processed. The conveying device LA arranged on the loader module LM corrects the arrangement of the substrate being processed based on the detection results. The alignment device ORT detects the center position, eccentricity, and cutout position of the fixture LW. The conveying device LA arranged on the loader module LM corrects the arrangement of the fixture LW based on the detection results.

[0053] It should be noted that the number of chambers 2a-2d, load lock chambers LLM, loader modules LM, and load ports LP is not limited to the number shown in the embodiment and can be any number. Furthermore, the jig LW can be transported in the same manner as the substrate being processed. The jig LW is shaped so that it can be transported by the transport devices LA and VA provided in the transport chamber VTM for transporting the substrate being processed. This allows the jig LW to be transported between the plasma processing apparatus 10, an example of a given apparatus, and the transport chamber VTM without breaking vacuum.

[0054] The MC181 has a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), and an HDD (Hard Disk Drive). It should be noted that the MC181 may also have other storage areas such as an SSD (Solid State Drive).

[0055] The CPU controls the processing of substrates being processed in chambers 2a-2d based on a recipe that specifies process steps and process conditions. The recipe is stored in a storage unit such as a ROM, RAM, or HDD. The storage unit also stores a program that is executed to control the processing and transport of substrates being processed. Furthermore, the storage unit also stores a program that is executed to control the transport of the jig LW. The CPU controls the transport of the jig LW based on the program that specifies the transport steps and conditions for the jig LW.

[0056] Light emission spectrometers 100a to 100d (hereinafter collectively referred to as "light emission spectrometers 100") are mounted on light-transmitting windows 101 provided in each chamber 2a to 2d, respectively, via optical fibers 102. When a jig LW is placed on a stage ST and the light source 13 provided on the jig LW is illuminated, the light emission spectrometers 100 receive the emitted light through the windows 101.

[0057] In semiconductor manufacturing equipment, the jig LW can be placed inside a FOUP or an alignment system ORT. The alignment system can be located within a transport system such as a transport chamber VTM, and the jig LW can be placed within the alignment system. If the light output from the light sources 13a-13d of the jig LW is sufficient for analysis by the emission spectrometer 100, analysis can be performed based on the light output from each light source 13a-13d without rotating the jig LW. In this case, the alignment system ORT is not required.

[0058] An example of analysis performed by the luminescence spectrometer 100 is process monitoring such as EPD (End Point Detection). If the window becomes obscured due to adhesion of reaction products generated during substrate processing, the sensitivity of the luminescence spectrometer 100 may be reduced. Furthermore, the sensitivity of the luminescence spectrometer 100 may also be affected by the winding state of the optical fiber 102 connecting the chamber to the luminescence spectrometer 100.

[0059] The jig LW according to the embodiment enables light reception by the emission spectrometer 100 while the light source 13 is located within the chamber 2. Furthermore, the jig LW can be transported into the chamber 2 without opening the chamber 2 to the atmosphere and maintaining a vacuum within the chamber 2. This allows the sensitivity of the emission spectrometer 100 to be adjusted to an optimal value, and the intensity of the emission signal can be stabilized.

[0060] In this embodiment, the window 101 has a honeycomb-shaped double window structure, which can suppress the intrusion of plasma and radicals into the window 101, thereby minimizing the amount of reaction products adhering to the window 101 and suppressing the reduction of the light intensity received by the emission spectrometer 100.

[0061] It should be noted that when a target substrate is processed in any chamber 2 among the plasma processing apparatuses 10 a to 10 d , the jig LW may be placed on the stage ST in another chamber 2 to receive light using the emission spectrometer 100 .

[0062] [Processing system]

[0063] Next, refer to Figure 4 The processing system 1 a for acquiring reference data of light emission intensity will be described. Figure 4 This diagram illustrates an example of the hardware configuration of a processing system 1a as a whole and each device within the processing system 1a, including a semiconductor manufacturing apparatus 30a, according to an embodiment. The processing system 1a includes the semiconductor manufacturing apparatus 30a and a jig LW. The semiconductor manufacturing apparatus 30a includes a chamber 2a, a light emission spectrometer 100a, a PC 400, transport devices VA1 and LA1, and an alignment device ORT1.

[0064] The emission spectrometer 100a includes a measuring unit 103a, a CPU 104a, and a memory 105a. The measuring unit 103a measures emission intensity data using light output from multiple light sources 13 mounted on a jig LW. The memory 105a stores a predetermined program for analyzing emission intensity data using light output from the multiple light sources 13 of the jig LW. By executing the program stored in the memory 105a, the CPU 104a measures the light output from the multiple light sources 13 of the jig LW, which has been transported to the chamber 2a of the plasma processing apparatus 10 serving as a reference, and analyzes the emission intensity data. The measured emission intensity data is stored in the memory 105a as reference data.

[0065] The PC 400 controls the transport of the jig LW between the chamber 2a (processing chamber) of the plasma processing apparatus 10, serving as a reference, and the transfer chamber VTM, maintaining the reduced pressure environment of the chamber 2a. The PC 400 transports the jig LW to the alignment device ORT1 and rotates the jig LW to a direction specified with respect to the notch 22. The PC 400 places the rotated jig LW on the stage ST. The jig LW illuminates the plurality of light sources 13a at a position near the window 101a of the chamber 2a. The measurement unit 103a receives the first wavelength of light outputted from the plurality of light sources 13a through the window 101a. The CPU 104a analyzes the luminous intensity of the received first wavelength of light.

[0066] Next, the PC 400 transports the jig LW to the alignment device ORT1 again and rotates it to a specified orientation with the notch 22 as a reference. The PC 400 places the rotated jig LW on the stage ST. The jig LW illuminates multiple light sources 13b at a position near the window 101a of the chamber 2a. The measurement unit 103a receives the second wavelength light output from the multiple light sources 13b through the window 101a. The CPU 104a analyzes the luminous intensity of the received second wavelength light.

[0067] Next, the PC 400 transports the jig LW to the alignment device ORT1 again and rotates it to the orientation specified with the notch 22 as a reference. The PC 400 places the rotated jig LW on the stage ST. The jig LW illuminates the multiple light sources 13c at a position near the window 101a of the chamber 2a. The measurement unit 103a receives the third wavelength of light output from the multiple light sources 13c through the window 101a. The CPU 104a analyzes the luminous intensity of the received third wavelength of light.

[0068] Next, the PC 400 transports the jig LW to the alignment device ORT1 again and rotates it to a specified orientation with the notch 22 as a reference. The PC 400 places the rotated jig LW on the stage ST. The jig LW illuminates multiple light sources 13d at a position near the window 101a of the chamber 2a. The measurement unit 103a receives the fourth wavelength of light output from the multiple light sources 13d through the window 101a. The CPU 104a analyzes the luminous intensity of the received fourth wavelength of light.

[0069] It should be noted that, when the relationship of the first wavelength of light from light source 13a, the fourth wavelength of light from light source 13d, the third wavelength of light from light source 13c, and the second wavelength of light from light source 13b is such that the measurement is preferably performed in a clockwise direction, the measurement is preferably performed in the order of first wavelength < fourth wavelength < third wavelength < second wavelength. For example, the measurement unit 103a preferably measures the light of each wavelength in the order of light source 13a emitting the first wavelength, light source 13d emitting the fourth wavelength, light source 13c emitting the third wavelength, and light source 13b emitting the second wavelength. By sequentially measuring the light of adjacent light sources 13, the amount of rotation required when rotating the jig LW in the alignment apparatus ORT1 can be reduced.

[0070] The CPU 104 a synthesizes the data on the emission intensity of the light having the first to fourth wavelengths, and stores the synthesized emission intensity data in the memory 105 a as reference data.

[0071] Next, refer to Figure 5 A description will be given of a processing system 1 a for comparing measurement data of luminescence intensity with reference data to correct the measurement data. Figure 5 This diagram illustrates an example of the hardware configuration of a processing system 1b as a whole and each device within the processing system 1b, including a semiconductor manufacturing apparatus 30b, according to an embodiment. The processing system 1b includes the semiconductor manufacturing apparatus 30b and a jig LW. The semiconductor manufacturing apparatus 30b includes a chamber 2b, a light emission spectrometer 100b, an MC 181, transport devices VA2 and LA2, and an alignment device ORT2.

[0072] The emission spectrometer 100b includes a measuring unit 103b, a CPU 104b, and a memory 105b. The measuring unit 103b measures emission intensity data using light output from multiple light sources 13 mounted on a jig LW. The memory 105b stores a predetermined program for analyzing emission intensity data using light output from the multiple light sources 13 of the jig LW. The CPU 104b executes the program stored in the memory 105a to measure and analyze the emission intensity data from the multiple light sources 13 of the jig LW, which is transported into the chamber 2b of the plasma processing apparatus 10 serving as the calibration target. The CPU 104b compares the measured emission intensity data with reference data stored in the memory 105a. Based on the comparison results, the CPU 104b corrects the measured data.

[0073] The MC 181 controls the transport of the jig LW between chamber 2b (processing chamber) and transfer chamber VTM of the plasma processing apparatus 10, the calibration target, while maintaining the reduced pressure environment of chamber 2b (processing chamber). The MC 181 transports the jig LW to the alignment device ORT2 and rotates the jig LW to a specified orientation relative to the notch 22. The MC 181 places the rotated jig LW on the stage ST. The jig LW illuminates multiple light sources 13a near the window 101b of the chamber 2b. The measurement unit 103b receives the first wavelength light outputted by the multiple light sources 13a through the window 101b. The CPU 104b analyzes the intensity of the received first wavelength light.

[0074] Next, MC 181 transports jig LW to alignment device ORT2 again and rotates jig LW to a specified orientation with notch 22 as a reference. MC 181 places the rotated jig LW on stage ST. Multiple light sources 13b are illuminated near window 101b of chamber 2b. Measurement unit 103b receives the second wavelength light emitted from multiple light sources 13b through window 101b. CPU 104b analyzes the intensity of the received second wavelength light.

[0075] Next, MC 181 transports jig LW to alignment device ORT2 again and rotates jig LW to a specified orientation relative to notch 22. MC 181 places the rotated jig LW on stage ST. Multiple light sources 13c illuminate jig LW near window 101b of chamber 2b. Measurement unit 103b receives the third wavelength of light emitted from multiple light sources 13c through window 101b. CPU 104b analyzes the intensity of the received third wavelength of light.

[0076] Next, MC 181 transports jig LW to alignment device ORT2 again and rotates jig LW to a specified orientation with notch 22 as a reference. MC 181 places the rotated jig LW on stage ST. Multiple light sources 13d are illuminated near window 101b of chamber 2b. Measurement unit 103b receives light of the fourth wavelength outputted from multiple light sources 13d through window 101b. CPU 104b analyzes the intensity of the received light of the fourth wavelength.

[0077] The CPU 104 b synthesizes the data on the emission intensity of the light of the first to fourth wavelengths and uses the synthesized emission intensity data as measurement data to compare with the reference data stored in the memory 105 a .

[0078] Based on the comparison results, CPU 104b corrects the synthesized luminous intensity measurement data. In other words, CPU 104b calculates the difference between the synthesized luminous intensity measurement data and the reference data and corrects the synthesized luminous intensity measurement data so that the measurement data displays the same waveform as the reference data.

[0079] The server obtains and accumulates the corrected emission intensity data (hereinafter referred to as "calibration data") from the emission spectrometer 100b. This allows analysis of the plasma processing apparatus 10's status and equipment differences based on the accumulated calibration data logs. The server can be a host computer connected to multiple MCs 181 controlling multiple semiconductor manufacturing apparatuses 30 and collecting calibration data from the multiple MCs 181.

[0080] [Actions of the processing system]

[0081] Next, refer to Figure 6 An example of the operation of the processing system 1 a when obtaining reference data according to the embodiment will be described. Figure 6 1 is a diagram illustrating an example of the operation of the processing system 1 a according to the embodiment. Figure 6 The line on the left shows the processing of the fixture LW. Figure 6 The center line shows the processing of PC 400 . Figure 6 The line on the right side of shows the processing of the emission spectroscopic analysis device 100a.

[0082] When this process begins, the PC 400 uses the transport devices VA1 and LA1 to transport the jig LW to the alignment device ORT1 (steps S31 and S41). Next, the PC 400 rotates the jig LW to a predetermined rotational direction within the alignment device ORT1 (steps S32 and S42). Next, the PC 400 uses the transport devices VA1 and LA1 to transport the jig LW to the chamber 2a of the plasma processing apparatus 10, which serves as a reference (steps S33 and S43).

[0083] Next, the PC 400 uses the picker of the transport unit VA1 to place the jig LW on the stage ST within the chamber 2a (step S44). At this point, the PC 400 sends a measurement start signal to the light emission spectrometer 100a (step S45). The light emission spectrometer 100a receives the measurement start signal (step S51).

[0084] At the moment of performing the processing of step S44, the fixture LW detects whether it is placed (step S34). The fixture LW uses the temperature sensor 14 or the acceleration sensor 17 to detect whether the fixture LW is placed on the stage ST. The acceleration sensor 17 detects the tilt and lifting movement of the fixture LW. The temperature sensor detects the temperature of the stage ST. The fixture LW determines whether it is placed on the stage ST by detecting the tilt, lifting movement and / or temperature of the fixture LW. The fixture LW lights up the LED light source 13a at the moment of detecting that it is placed (step S35). The luminescence spectrometry analysis device 100a starts receiving LED light (step S52).

[0085] After a predetermined time has passed since the light source 13a was turned on (step S36), the fixture LW turns off the LED light source 13a (step S37). After a predetermined time has passed since the light source 13a was turned on (step S53), the light emission spectrometer 100a stops receiving the LED light (step S54). The light emission spectrometer 100a stores the results of the light emission spectrometry analysis for the target wavelength range (e.g., the first wavelength) and the corresponding light emission intensity data in the memory 105a (step S56). As a result, the light emission intensity data for the first wavelength is stored in the memory 105a.

[0086] After stopping the LED light reception in step S54, the light emission spectrometer 100a sends a measurement stop signal to the PC 400 (step S55). Upon receiving the measurement stop signal (step S46), the PC 400 removes the jig LW from the chamber 2a by operating the picker of the transport unit VA1 (step S47). This removes the jig LW from the chamber 2a (step S38).

[0087] PC 400 repeats steps S41 to S47, jig LW repeats steps S31 to S38, and the light emission spectrometer 100a repeats steps S51 to S56. Thus, the light emission spectrometer 100a measures the light output from light source 13b, light source 13c, and light source 13d, performing spectroscopic analysis in sequence. The light emission spectrometer 100a stores the results of the light emission spectrometry analysis for the target wavelength range (e.g., the second wavelength, the third wavelength, and the fourth wavelength) and the data on the light emission intensities at these wavelengths in memory 105a (step S56). Consequently, the light emission intensities at the second, third, and fourth wavelengths are stored in memory 105a together with the data on the light emission intensity at the first wavelength.

[0088] PC 400 repeats steps S41 through S47 a predetermined number of times (four times in this specification) and then terminates this process. The jig LW repeats steps S31 through S38 a predetermined number of times (four times in this specification) and then terminates this process. The luminescence spectrometer 100a repeats steps S51 through S56 a predetermined number of times (four times in this specification) and then synthesizes the stored luminescence intensity data (step S57).

[0089] Next, the emission spectroscopic analysis device 100a stores the synthesized emission intensity measurement data as reference data in the memory 105a (step S58), and ends this process.

[0090] Figure 7 is a diagram showing an example of reference data according to an embodiment. Figure 7 As an example of reference data A of the luminous intensity according to the embodiment, data of luminous intensity having four peaks at different wavelengths is shown.

[0091] It should be noted that the scheduled time of step S36 corresponds to the scheduled time of step S53. Instead of the processing of step S36 and step S53, the following processing can also be performed. PC400 determines whether the clamp LW has left the stage ST by the action of the pick-up of the conveying device VA1. When it is determined that the clamp LW has left the stage ST, PC400 sends a measurement stop signal to the clamp LW and the luminescence spectrometry analysis device 100a. In response to receiving the measurement stop signal, the clamp LW turns off the light source 13a of the LED. In response to receiving the measurement stop signal, the luminescence spectrometry analysis device 100a stops receiving the LED light. The clamp LW can use the temperature sensor 14 or the acceleration sensor 17 to detect the situation where the clamp LW has left the stage ST.

[0092] In addition, the jig LW according to the embodiment, the PC 400, and the light emission spectroscopic analysis device 100a can perform wireless communication to perform Figure 6 of each treatment.

[0093] [Operation of the Luminescence Spectrometer]

[0094] Next, refer to Figure 8 An example of the operation of the light emission spectrometer 100 a according to the embodiment will be described. Figure 8 1 is a diagram illustrating an example of the operation of the emission spectroscopic analysis device 100 a according to the embodiment.

[0095] When this process starts, the emission spectroscopic analysis device 100a receives a measurement start signal (see Figure 6 ) (step S45) (step S21). Next, the luminescence spectrophotometer 100a starts the timer (step S22). Next, the luminescence spectrophotometer 100a determines whether luminescence is detected through the window 101a of the chamber 2a (step S23). In the case where it is determined that luminescence is not detected, the luminescence spectrophotometer 100a determines whether the set time has passed by the time counted by the timer (step S24). If the luminescence spectrophotometer 100a determines that the set time has not passed, it returns to step S23 and determines whether luminescence is detected. If the luminescence spectrophotometer 100a detects luminescence before the set time has passed, the luminescence in the wavelength range of the object is analyzed (step S25), and the processing is terminated. On the other hand, if luminescence is not detected and the set time has passed, the luminescence spectrophotometer 100a outputs an error (step S26), and the processing is terminated. It should be noted that the luminescence intensity data of the analysis result is stored in the memory 105a as reference data (see Figure 6 Step S56).

[0096] [Actions of the processing system]

[0097] Next, refer to Figure 9 An example of the operation of the processing system 1 b according to the embodiment when comparing reference data with measurement data to correct the measurement data will be described. Figure 9 1 is a diagram illustrating an example of the operation of the processing system 1 b according to the embodiment. Figure 9 The line on the left shows the processing of the fixture LW. Figure 9 The central line shows the processing of MC181. Figure 9 The line on the right side of shows the processing of the luminescence spectrometer 100b. Figure 9 The action of the fixture LW is related to Figure 6 The actions of the fixture LW are the same, so the same step number is given. Figure 9 The MC181 operates with Figure 6 The actions of the PC400 are the same, so the same step numbers are given. Figure 9 The operation of the luminescence spectrometer 100b is similar to Figure 6 The operations of the luminescence spectrometer 100a are substantially the same, and the same steps are assigned the same step numbers. Figure 9 In the processing system 1b, the luminescence spectrometer 100b performs the processing of step S59, and Figure 6 In the processing system 1a, the emission spectroscopic analysis device 100a performs the processing of step S58. The second difference is that, with respect to the chamber 2 to which the jig LW is transported in steps S33 and S44, Figure 9 The chamber 2b of the plasma processing apparatus 10 is the calibration object, and Figure 6 1 and 2 show the chamber 2a of the standard plasma processing apparatus 10. The description of the same processes other than the above-mentioned differences will be largely omitted.

[0098] When this process begins, MC 181 repeats steps S41 through S47, jig LW repeats steps S31 through S38, and light emission spectrometer 100b repeats steps S51 through S56. Light emission spectrometer 100b sequentially measures and spectroscopically analyzes the light emitted from light source 13a, 13b, 13c, and 13d, storing the resulting light emission intensity data in memory 105b. This stores the measured light emission intensity data for the first, second, third, and fourth wavelengths within chamber 2b of plasma processing apparatus 10, the target of calibration.

[0099] MC181 repeats steps S41 through S47 a predetermined number of times (four times in this specification) and then terminates this process. Jig LW repeats steps S31 through S38 a predetermined number of times (four times in this specification) and then terminates this process. The emission spectrometer 100b repeats steps S51 through S56 a predetermined number of times (four times in this specification) and then synthesizes the stored data on the emission intensities at the first through fourth wavelengths (step S57).

[0100] Next, the emission spectrometer 100b compares the synthesized emission intensity data of the first to fourth wavelengths as measurement data with the reference data, performs correction so that the measurement data matches the reference data (step S59), and ends this process. Figure 7The dashed line in FIG represents an example of measurement data B according to an embodiment. The emission spectrometer 100b calculates the difference between the reference data A and the measurement data B and corrects the measurement data B so that the waveform of the measurement data B is identical to that of the reference data A. Thus, by correcting the peak position and emission intensity of the measurement data B, the measurement data B can be corrected to have the same waveform as the reference data A.

[0101] It should be noted that the fixture LW and MC181 according to the embodiment and the luminescence spectrometer 100b can communicate wirelessly to perform Figure 9 of each treatment.

[0102] [Operation of the Luminescence Spectrometer]

[0103] Figure 8 The operation of the luminescence spectrometer 100a is similar to Figure 6 Similarly, the operation of the luminescence spectrometer 100b is linked to the operation of the PC 400. Figure 9 It should be noted that the operation of the luminescence spectrometer 100b is linked to the operation of the MC181. Figure 8 The operation of the light emission spectrometer 100a shown is the same, so the description thereof is omitted here.

[0104] Because individual LED light sources 13 vary, reference data must be pre-measured and stored in memory 105a. Reference data can be created by, but is not limited to, an information processing device at the fixture manufacturer, such as a fixture manufacturing plant. Reference data can be created by an information processing device at the manufacturer of the semiconductor manufacturing apparatus 30a, or by an information processing device at the user, such as a factory at which the semiconductor manufacturing apparatus 30a is shipped. Furthermore, reference data can be created individually for each fixture LW, or shared across multiple fixtures LW.

[0105] As described above, in the processing system 1 according to the embodiment and its variations, the emission spectrometer 100 calculates the difference between the synthesized emission intensity measurement data and the reference data, and corrects the peak value and emission intensity of the measurement data so that the measurement data displays the same waveform as the reference data. This allows for process monitoring and control, such as EPD, to be performed while taking into account differences in equipment within the plasma processing apparatus 10.

[0106] In other words, by calibrating the emission intensity measurement data to the same waveform as the reference data, the same emission intensity measurement data can be displayed whenever LED light is received from chamber 2 when receiving light of the same wavelength. This allows for process monitoring and control such as EPD to be performed while taking into account differences in equipment within plasma processing apparatus 10.

[0107] Furthermore, this makes it possible to detect equipment variations in the plasma processing apparatus 10 based on the emission intensity measurement data. In other words, the equipment variations in the plasma processing apparatus 10 can be understood based on the difference between the emission intensity measurement data and the reference data, and operations such as process monitoring can be performed based on this knowledge of the equipment variations in the plasma processing apparatus 10.

[0108] The measurement data can be corrected at the time of shipment, when the window 101 becomes obscured due to adhesion of reaction products during substrate processing, at regular intervals, or for each measurement data.

[0109] The operations of the above components are not limited to these. For example, the operations of MC 181 may be performed by EC 180, or by MC 181 and EC 180 in collaboration. The operations of PC 400 may be performed by MC 181, or by EC 180, or by MC 181 and EC 180 in collaboration.

[0110] The PC 400 and the luminescence spectrometer 100a are an example of a first information processing device that is controlled to place the jig LW in a reference device and measure luminescence intensity data using light output from multiple light sources 13, using this data as reference data. The MC 181 and the luminescence spectrometer 100b are an example of a second information processing device that is controlled to place the jig LW in a calibration target device and measure luminescence intensity data using light output from multiple light sources. The second information processing device is controlled to obtain reference data, compare the measured luminescence intensity data with the reference data, and correct the measured luminescence intensity data (measurement data) based on the comparison results.

[0111] The first information processing device and the second information processing device can be the same information processing device or different information processing devices. For example, MC181 and luminescence spectrometry analysis device 100b can implement the functions of the first information processing device and the second information processing device. EC180 and luminescence spectrometry analysis device 100b can implement the functions of the first information processing device and the second information processing device. EC180, MC181, and luminescence spectrometry analysis device 100b can cooperate to implement the functions of the first information processing device and the second information processing device.

[0112] The instruction to transport the jig LW into the chamber may be issued when a signal notifying completion of substrate processing is received from the EC 180 for controlling the plasma processing apparatus 10 .

[0113] Temperature sensors 14a-14d are located on the jig LW, adjacent to each light source 13a-13d. Light emitted by each light source 13a-13d raises the temperature of the corresponding temperature sensor 14a-14d. If the measured temperature exceeds a predetermined threshold, at least one of the multiple light sources is determined to be defective, and the multiple light sources can be stopped from emitting light.

[0114] Furthermore, the analysis performed by the emission spectrometer 100 (100a, 100b) is not limited to EPD and can also be used for device diagnostics. As an example of device diagnostics, for example, the difference between emission intensity measurement data and reference data, or corrected emission intensity measurement data, can be used to determine whether the plasma state is normal. For example, this device diagnostic can be performed after maintenance of the plasma processing apparatus 10 or after replacement of a component within the plasma processing apparatus 10.

[0115] Figure 10 The diagram shows an example of device diagnosis performed using the processing system 1 according to the embodiment and the modified example. The light source 13 is lit using the jig LW placed on the plasma processing device 10 for generating helium plasma. Then, the emission spectrometer 100 performs spectroscopic analysis on the helium plasma to obtain Figure 10 (a) shows the data of the luminous intensity. Figure 10In (b), the solid line is the baseline data, and the dotted line is the corrected measurement data. As a result, a peak of He (helium) with a wavelength of 295nm appears in both the baseline data and the measurement data. However, at a wavelength of 309nm, a small peak of OH appears in the measurement data relative to the baseline data. Based on this result, the processing system 1 can analyze that the small peak of OH is caused by unstable factors in the chamber 2a. In this way, based on the difference between the baseline data and the measurement data, a small peak that does not appear in the plasma under an approximately ideal light source can be found and analyzed. In this way, since the existence of a peak that is very important for analyzing the equipment differences between multiple plasma processing devices 10 can be found and analyzed based on the corrected luminous intensity data, its peak point can be extracted and the measurement data at the peak point can be corrected.

[0116] As described above, the jig LW of the embodiment improves the accuracy of luminescence intensity analysis. Furthermore, by correcting the luminescence intensity measurement data to the same waveform as the reference data, process monitoring and control, such as EPD, can be performed while taking into account device variations in the plasma processing apparatus 10. Furthermore, this makes it possible to detect device variations in the plasma processing apparatus 10 based on the luminescence intensity measurement data, and to perform process monitoring and other operations based on this knowledge.

[0117] [Other examples of fixture LW]

[0118] Reference Figure 11 Another example of the jig LW according to the embodiment will be described. Figure 11 is a cross-sectional schematic diagram showing another example of the clamp LW according to the embodiment. Figure 1 The illustrated jig LW is different in the number and arrangement of the light sources 13 , and the other structures are the same, so description thereof will be omitted.

[0119] Figure 11 Light sources 13a-13l of the illustrated fixture LW are arranged on a control substrate 12 on a base 11. Light sources 13a-13l each emit light of a different wavelength (i.e., a different color). Light source 13a is composed of three LEDs emitting light of the same wavelength, arranged side by side. Similarly, light sources 13b-13l are each composed of three LEDs emitting light of the same wavelength, arranged side by side. Light sources 13a-13l may be OLEDs rather than LEDs.

[0120] By arranging light sources 13a to 13l, each emitting light of the same wavelength, in groups of three, the amount of light at each wavelength is increased. This allows the emission spectrometer 100, mounted on the window of the calibration device or reference device, to easily receive light of each wavelength through the window. Light sources 13a, 13b, and 13c are arranged separately from each other. Furthermore, light sources 13d, 13e, and 13f are arranged separately from each other in adjacent locations across battery 19. Furthermore, light sources 13g, 13h, and 13i are arranged separately from each other in adjacent locations across battery 19. Furthermore, light sources 13j, 13k, and 13l are arranged separately from each other in adjacent locations across battery 19. Thus, 36 (12 x 3) light sources 13 emitting light of 12 different wavelengths are arranged in groups of three each emitting light of the same wavelength.

[0121] The light sources 13a to 13l are preferably arranged along the outermost periphery of the base 11. This makes it easier for the emission spectrometer 100 to receive light output from the light sources 13a to 13l. However, there are no particular restrictions on the arrangement of the multiple light sources 13a to 13l as long as they are arranged on the control substrate 12.

[0122] The measurement order for the three light sources 13a of the same wavelength is preferably the center light source, then one of the two end light sources, then the other of the two end light sources. However, the measurement can be performed in the order of the light source at one end, then the light source at the other end, then the center light source, or the order of the light source at one end, then the center light source, then the light source at the other end. The same applies to the measurement order for the three light sources 13b to 13i of the same wavelength.

[0123] The fixture, processing system, and processing method according to the disclosed embodiments should be considered in all respects to be illustrative and non-restrictive. The above embodiments may be modified and improved in various ways without departing from the scope and spirit of the appended claims. The contents described in the above embodiments may be adopted in other configurations and combined without conflict.

[0124] The plasma processing device disclosed in the present invention can be applied to any type of device including atomic layer deposition (ALD) device, capacitively coupled plasma (CCP: Capacitively Coupled Plasma), inductively coupled plasma (ICP: Inductively Coupled Plasma), radial line slot antenna (RLSA: Radial Line Slot Antenna), electron cyclotron resonance plasma (ECR: Electron Cyclotron Resonance Plasma), and helicon wave plasma (HWP: Helicon Wave Plasma).

Claims

1. A fixture for calibrating a luminescence spectrometer that analyzes the luminescence intensity of plasma from a plasma processing device, the fixture comprising: base; a plurality of light sources disposed on the base and emitting light of different wavelengths; a control unit, disposed on the base, and configured to sequentially light up or turn off the plurality of light sources based on a given program; as well as a power supply unit, provided on the base, and supplying power to the plurality of light sources and the control unit, The jig has a shape capable of being transported by a transport device provided in a transport chamber connected to the plasma processing apparatus.

2. The clamp according to claim 1, wherein The base is a wafer.

3. The clamp according to claim 1 or 2, wherein: The jig is transported between a given processing chamber and a transfer chamber while maintaining a reduced pressure environment.

4. The clamp according to claim 1 or 2, wherein: The plurality of light sources are arranged along an outermost circumference of the base.

5. The clamp according to claim 1 or 2, wherein: A plurality of light sources emitting light of the same wavelength among the plurality of light sources are arranged side by side.

6. The clamp according to claim 1 or 2, wherein: Light sources emitting light of different wavelengths among the plurality of light sources are arranged separately from each other.

7. The clamp according to claim 1 or 2, wherein: The wavelength range of the multiple light sources is 200nm to 850nm.

8. The clamp according to claim 1 or 2, wherein: The plurality of light sources are LEDs or OLEDs.

9. The clamp according to claim 1 or 2, wherein: The fixture also includes a sensor.

10. The clamp according to claim 1 or 2, wherein: The clamp has a notch for determining the orientation of the clamp.

11. A processing system comprising: A first information processing device is configured to place a jig in a processing chamber of a device serving as a reference, and to control the jig so as to measure luminous intensity data using light output from a plurality of light sources and use the data as reference data, the jig including a base, the plurality of light sources disposed on the base and emitting light of different wavelengths, a control unit disposed on the base and activating or extinguishing the plurality of light sources based on a given program, and a power supply unit disposed on the base and supplying power to the plurality of light sources and the control unit; as well as The second information processing device is controlled so as to place the jig in a processing chamber of a device to be calibrated and measure data on luminous intensity using light output from the plurality of light sources. The second information processing device is controlled in such a manner that it obtains the reference data, compares the measured luminous intensity data with the reference data, and corrects the measured luminous intensity data according to the comparison result.

12. The processing system according to claim 11, wherein The first information processing apparatus controls the jig to be transported between the processing chamber and the transfer chamber of the apparatus serving as a reference so as to maintain a reduced pressure environment.

13. The processing system according to claim 11 or 12, wherein: The second information processing apparatus controls the jig to be transported between the processing chamber and the transport chamber of the apparatus to be calibrated so as to maintain a reduced pressure environment.

14. The processing system according to claim 11 or 12, wherein: The first information processing device and the second information processing device are different information processing devices.

15. The processing system according to claim 11 or 12, wherein: The first information processing device and the second information processing device are the same information processing device.

16. A treatment method comprising: A step of placing a jig in a processing chamber of a device to be calibrated, and measuring data on luminous intensity using light output from a plurality of light sources, the jig including a base, the plurality of light sources disposed on the base and emitting light of different wavelengths, a control unit disposed on the base and activating or deactivating the plurality of light sources based on a given program, and a power supply unit disposed on the base and supplying power to the plurality of light sources and the control unit; as well as The fixture is arranged in a processing chamber of a device serving as a reference, and the measured luminous intensity data is compared with the reference data with reference to a storage unit that stores data of luminous intensity measured using light output from the multiple light sources as reference data, and the measured luminous intensity data is corrected based on the comparison result.

17. The processing method according to claim 16, wherein: While rotating the jig by a given angle using an alignment device, a light source emitting light of one wavelength among the plurality of light sources is switched to a light source emitting light of another wavelength, and the luminous intensity data of each of the plurality of light sources is measured sequentially.

18. The treatment method according to claim 16 or 17, comprising: a step of measuring the temperature near the plurality of light sources using a temperature sensor provided near the plurality of light sources; as well as The step of stopping the light emission of the plurality of light sources when the measured temperature is equal to or higher than a predetermined threshold value.

19. The treatment method according to claim 16 or 17, comprising: The jig is transported between the processing chamber and the transfer chamber of the device to be calibrated while maintaining a reduced pressure environment.

20. The treatment method according to claim 16 or 17, comprising: The jig is transported between the processing chamber and the transfer chamber of the apparatus serving as a reference while maintaining a reduced pressure environment.

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