Diluent composition for removing photosensitive resin and anti-reflection film, and method for removing photosensitive resin and anti-reflection film using the same

Abstract

The present invention provides a thinner composition, which comprises: a) C2-C4 alkylene glycol C1-C4 alkyl ether acetate; b) cyclopentanone; and c) a compound represented by a chemical formula. The present invention also provides a photosensitive resin and an anti-reflection film removal method.

Description

Technical Field

[0001] The present invention relates to a photosensitive resin and anti-reflection film removal diluent composition used in the production process of semiconductor elements and thin film transistor liquid crystal display elements, and a photosensitive resin and anti-reflection film removal method using the same. Background Art

[0002] In the process of manufacturing semiconductor devices, the photolithography process is one of the important processes, which is to apply a photosensitive resin composition on a wafer, transfer a pre-designed pattern, and then perform an appropriate etching process according to the transferred pattern to form an electronic circuit.

[0003] The photolithography process is carried out through the following processes: 1) a coating process, in which a photosensitive resin composition is uniformly coated on the surface of a wafer; 2) a soft baking process, in which the solvent is evaporated from the coated photosensitive film so that the photosensitive film adheres to the surface of the wafer; 3) an exposure process, in which a light source such as ultraviolet rays is used to repeatedly and sequentially reduce the circuit pattern on the photomask to expose the photosensitive film so that the pattern of the photomask is transferred to the photosensitive film; 4) a developing process, in which a developer is used to selectively remove portions having different physical properties (such as solubility differences) according to the photosensitivity exposed to the light source; 5) a hard baking process, in which the photosensitive film remaining on the wafer after the developing process is more tightly fixed; 6) an etching process, in which a certain portion is etched according to the developed photosensitive film pattern; 7) a stripping process, in which unnecessary photosensitive film is removed after the above process; etc.

[0004] In the photolithography technology, a spin coating process is performed in which a photosensitive film is provided on a wafer and the substrate is rotated so that the surface is evenly spread due to centrifugal force. In this process, the photosensitive film is accumulated on the edge portion and the back side of the substrate due to the centrifugal force, thereby forming small spherical substances. The spherical substances are peeled off during the transfer of the substrate after the baking process, which causes the presence of particles in the device and the defocusing during exposure. These unnecessary photosensitive substances may cause device contamination, thereby reducing productivity in the component manufacturing process. In order to remove these unnecessary photosensitive substances, spray nozzles are provided above and below the edge portion and the back side of the substrate, and a diluent composition composed of an organic solvent component is sprayed on the edge portion and the back side through the nozzles to remove them.

[0005] The factors that determine the performance of the thinner composition are, for example, dissolution rate and volatility. The dissolution rate of the thinner composition is particularly important for its ability to effectively and quickly dissolve and remove the photosensitive resin. Specifically, in the cleaning of the edge portion, an appropriate dissolution rate should be possessed to have a smooth processing section surface. When the dissolution rate is too high, photosensitive film erosion (attack) will occur. On the contrary, when the dissolution rate is too low, a partially dissolved photosensitive film tail flow phenomenon called tailing will occur in the cleaning of the photosensitive film coated on the substrate. Especially recently, due to the high integration and high density of semiconductor integrated circuits and the large-diameter substrates, the rotation speed will inevitably be reduced in the cleaning process using a spin coater. In this cleaning process, due to the shaking of the substrate at a low rotation speed and the contact speed of the sprayed thinner composition not having an appropriate dissolution rate, a bouncing (bounding) phenomenon will occur, thereby increasing the use of unnecessary thinner compositions. Compared with the conventional high-spin cleaning process, the low-spin cleaning process caused by the enlarged aperture of the substrate requires a stronger dissolution rate of the diluent.

[0006] In addition, the volatility needs to be easy to volatilize after removing the photosensitive resin so that there is no residue on the substrate surface. If the volatility is too low and the composition fails to volatilize and has residues, the residual diluent itself will serve as a pollution source in various processes, especially in the subsequent etching process, thereby reducing the productivity of semiconductor components. When the volatility is too high, the substrate will cool rapidly, resulting in a severe thickness deviation of the coated photosensitive film and easy volatilization into the air during use, which will become the cause of pollution of the cleanliness itself. Therefore, various defects such as tailing or photosensitive film erosion will become the direct cause of the reduction in the production productivity of semiconductor components.

[0007] The composition comprising propylene glycol monoalkyl ether acetate and 3-ethoxyethyl propionate etc. is disclosed in the Korean Publication Patent No. 10-2005-0080603. However, the thinner composition comprises 3-methoxymethyl propionate with high volatility, so there are problems such as uneven thickness and edge cracking. In addition, in order to improve the solubility and EBR (Edge Bead Removal) characteristics of the strong polar photoresist, the existing thinner composition comprises a composition with strong polarity. When the polarity is too high, the speed of the photoresist swelling (swelling) at the end of the EBR towards the central direction of the wafer is accelerated, and there is a problem that the peak height (Hump height) becomes higher. In addition, the high peak height can cause the available area to reduce and the problems such as the defective rate is increased and the productivity is reduced due to the hump (Hump) in the subsequent process, so it is urgent to solve these problems.

[0008] Prior art literature

[0009] Patent Literature

[0010] (Patent Document 1) KR10-2005-0080603 A Summary of the invention

[0011] Technical issues

[0012] In order to improve the problems existing in the above-mentioned prior art, the object of the present invention is to provide a thinner composition which has the performance of uniformly removing unnecessary photosensitive films produced on the edge portion or back portion of the substrate due to the large diameter of the substrate used for manufacturing semiconductor elements and thin-film transistor liquid crystal display elements.

[0013] In particular, an object of the present invention is to provide a thinner composition having excellent solubility and EBR characteristics not only for photosensitive films including KrF, ArF and EUV photoresists but also for antireflection films and capable of reducing peak height.

[0014] In addition, the present invention aims to provide a diluent composition which has better effects than the prior art, is non-toxic to the human body, has no unpleasant odor, and thus has high operational stability.

[0015] Technical Solution

[0016] In order to achieve the above object, the present invention provides a diluent composition, which comprises: a) C2-C4 alkylene glycol C1-C4 alkyl ether acetate; b) cyclopentanone; c) a compound represented by the following chemical formula 1:

[0017]

Chemical formula 1

[0018]

[0019] In the chemical formula 1, R1 is a C1-C4 alkyl group, and R2 is a C2-C4 alkyl group.

[0020] The invention comprises a method for removing photosensitive resin, which comprises the step of removing the photosensitive resin on a substrate by using the diluent composition.

[0021] The present invention comprises a method for removing an anti-reflection film, which comprises the step of removing the anti-reflection film on a substrate by using the diluent composition.

[0022] Beneficial Effects

[0023] The thinner composition according to the present invention has the following effect: the thinner composition is used on the edge portion and back portion of a substrate used in a method for manufacturing a semiconductor element and a thin film transistor liquid crystal display element, thereby effectively removing the attached unnecessary photosensitive film in a short time.

[0024] In particular, a thinner composition is provided which has excellent solubility and EBR characteristics for KrF, ArF and EUV (extreme ultraviolet) photoresists and antireflection films and can reduce peak height.

[0025] In addition, the polarity of the diluent composition is adjusted, and the diluent slows down the swelling speed of the photoresist at the end of the EBR toward the center of the wafer, thereby reducing the hump height. This increases the available area and reduces the defective rate caused by the hump in subsequent processes to improve productivity.

[0026] In addition, the diluent composition of the present invention is non-toxic to human body, has no unpleasant odor and thus has high operation stability, and has low corrosiveness and thus prevents corrosion of the substrate to be cleaned. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a chart for calculating the peak height in the EBR (Edge Bead Removal) test of Experimental Example 1.

[0028] Figure 2a This is a photograph taken after the EBR process was performed in the EBR test of Experimental Example 1 (the EBR line is not uniform and a tailing phenomenon occurs).

[0029] Figure 2b This is a photograph taken after the EBR process is performed in the EBR test of Experimental Example 1 (the EBR line is not linear and uniform).

[0030] Figure 2c This is a photograph taken after the EBR process is performed in the EBR test of Experimental Example 1 (the EBR line is not linear but uniform). Figure 2d This is a photograph taken after the EBR process was performed in the EBR test of Experimental Example 1 (the linearity and uniformity of the EBR line are in a constant state).

[0031] Figure 3a This is a photograph taken after the RRC process was performed in the RRC (Reducing Resist Coating) test of Experimental Example 2 (the state where the photosensitive film coating on the wafer is less than 80%).

[0032] Figure 3b This is a photo taken after the RRC process was performed in the RRC (Reducing Resist Coating) test of Experimental Example 2 (the photosensitive film on the wafer is coated with 80-95%).

[0033] Figure 3c This is a photograph taken after the RRC process was performed in the RRC (Reducing Resist Coating) test of Experimental Example 2 (the photosensitive film on the wafer is coated more than 95%, but there are stains or uncoated parts).

[0034] Figure 3d This is a photo taken after the RRC process was performed in the RRC (Reducing Resist Coating) test of Experimental Example 2 (the photosensitive film on the wafer is coated with more than 95% and there is no stain). DETAILED DESCRIPTION

[0035] The present invention provides a diluent composition, which comprises: a) C2-C4 alkylene glycol C1-C4 alkyl ether acetate; b) cyclopentanone; c) a compound represented by the following chemical formula 1:

[0036]

Chemical formula 1

[0037]

[0038] In the chemical formula 1, R1 is a C1-C4 alkyl group, and R2 is a C2-C4 alkyl group.

[0039] The thinner composition according to the present invention is preferably used to remove the photosensitive resin and / or anti-reflection film used in the manufacturing process of semiconductor thin film transistor liquid crystal display elements. The photosensitive resin is at least one of ArF, KrF and EUV photoresist.

[0040] The thinner composition according to the present invention has excellent solubility and EBR characteristics for photosensitive resins and / or anti-reflective films containing KrF, ArF and EUV photoresists (PR) and can reduce peak height. In addition, the polarity of the thinner composition is adjusted, and the diluent slows down the swelling speed of the photoresist (PR) at the end of the EBR toward the center of the wafer, thereby improving productivity.

[0041] Specifically, when removing unnecessary parts of the photosensitive resin and / or anti-reflection film formed on the substrate (wafer), Figure 1As shown at the top of the image, the edge of the photosensitive resin and / or the anti-reflection film expands, thereby forming a step difference higher than that of the photosensitive resin and / or the anti-reflection film other than the edge, which is called a hump, and the step difference is called a peak height.

[0042] In addition, the diluent composition according to the present invention further comprises a solubility parameter having a polarity calculated value of 7 MPa. 1 / 2 ~8MPa 1 / 2 The solubility parameter in the present invention refers to the Hansen Solubility Parameter. Specifically, when the polarity calculated value of the solubility parameter is 7MPa, 1 / 2 ~8MPa 1 / 2 When using solvents with excellent EBR characteristics and reduced peak height.

[0043] In addition, the diluent composition of the present invention is non-toxic to human body, has no unpleasant odor and thus has high operation stability, and has low corrosiveness and thus prevents corrosion of the substrate to be cleaned.

[0044] <Diluent Composition>

[0045] The diluent composition of the present invention comprises: a) C2-C4 alkylene glycol C1-C4 alkyl ether acetate; b) cyclopentanone; and c) a compound represented by the following chemical formula 1.

[0046] a) C2-C4 alkylene glycol C1-C4 alkyl ether acetate

[0047] In the present invention, C2-C4 alkylene glycol C1-C4 alkyl ether acetate has excellent solubility for all kinds of photoresists and imparts uniform coating capability to the photoresists.

[0048] The C2-C4 alkylene glycol C1-C4 alkyl ether acetate is preferably at least one selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate and mixtures thereof. In particular, at least one selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate and mixtures thereof is more preferred.

[0049] Relative to the total weight of the thinner composition of the present invention, preferably, the content of the C2-C4 alkylene glycol C1-C4 alkyl ether acetate composition is 30-80% by weight. When the above range is met, the solubility of all photoresists is excellent, and an appropriate surface tension is achieved so that the photoresist is evenly coated. When the above range is exceeded, the surface tension becomes high so that the photoresist is not evenly spread when coated, and the phenomenon of edge cracking cannot be overcome due to the small pattern step difference on the wafer.

[0050] b) Cyclopentanone

[0051] The cyclopentanone contained in the diluent composition of the present invention has a cyclic structure, has good affinity with the cyclic resin and has a high polarity (the calculated polarity value of the solubility parameter is 7.9 MPa). 1 / 2 ), thereby increasing the polarity of the thinner composition and improving the solubility and dissolution rate of photoresists or anti-reflective films with high polarity such as KrF, ArF and EUV; and reducing the phenomenon that γ-butyrolactone with low volatility in high polarity and PR with high volatility, which are dissolved in the final drying process of the EBR process, flow at the end.

[0052] In particular, the cyclopentanone has higher volatility and excellent solubility than cyclohexanone. The diluent composition of the present invention provides a more excellent effect in EBR or RRC than the prior art, is less harmful to the human body when inhaled or in contact with the eyes or skin, and has no unpleasant odor, thereby greatly improving the operation stability.

[0053] At the same time, the cyclopentanone and linear ketones (e.g., methyl ethyl ketone, methyl amyl ketone, etc.) produce differences in photoresist dissolution rate and volatility according to their structures, and therefore the following disadvantages are not applicable to the present invention, i.e., linearity of the EBR line of the photosensitive film cannot be achieved after EBR, or even if linearity is achieved, it cannot be uniform.

[0054] Relative to the total weight of the composition, preferably, the cyclopentanone content is 10 to 50 wt %, more preferably 15 to 40 wt %. When the above range is met, excellent dissolution activity is provided for all photoresists, and appropriate surface tension is achieved to provide excellent RRC and EBR characteristics.

[0055] Specifically, when the cyclopentanone exceeds the range, the solvency may be reduced to cause poor EBR, and the volatility of the thinner composition may be increased to cause uneven coating thickness.

[0056] c) A compound represented by the following chemical formula 1

[0057] The thinner composition of the present invention comprises a compound represented by the following chemical formula 1 as a solvent propionate compound. The compound represented by the following chemical formula 1 is added to have an appropriate dissolution rate for the photoresist and to adjust the polarity of the composition to reduce the peak height.

[0058]

Chemical formula 1

[0059]

[0060] In the chemical formula 1, R1 is a C1-C4 alkyl group, and R2 is a C2-C4 alkyl group. Preferably, R1 is a C2-C4 alkyl group.

[0061] According to one embodiment, at least one of the group consisting of ethyl 3-methoxypropionate, propyl 3-methoxypropionate, butyl 3-methoxypropionate, ethyl 3-ethoxypropionate, propyl 3-ethoxypropionate, butyl 3-ethoxypropionate, ethyl 3-propoxypropionate, propyl 3-propoxypropionate, butyl 3-propoxypropionate, ethyl 3-butoxypropionate, propyl 3-butoxypropionate and butyl 3-butoxypropionate represented by the chemical formula 1 can be selected, and preferably ethyl 3-ethoxypropionate.

[0062] Specifically, the ethyl 3-ethoxypropionate is a non-acetic acid ester compound, and is used as a resin, a photosensitive agent, a polyhydroxystyrene, and an acrylic copolymer that partially replaces the protective group of the main components of ArF, KrF, EUV, etc. photoresists. It has an appropriate dissolution rate, so that residues are left on the surface of the wafer. Moreover, the ethyl 3-ethoxypropionate has a low polarity (solubility parameter polarity calculated value: 5.7MPa 1 / 2 ) is used to adjust the polarity of the diluent composition, so that the diluent slows down the swelling speed of PR at the end of EBR toward the center of the wafer, reduces the hump height, thereby increasing the available area and reducing the defective rate caused by the hump in subsequent processes and helping to improve productivity.

[0063] Preferably, the content of the compound represented by the chemical formula 1 is 5 to 30 wt % relative to the total weight of the thinner composition of the present invention. When the content is within the above range, excellent hump reduction effect and EBR characteristics can be provided.

[0064] However, when the range is exceeded, the hump reduction effect is insufficient or the dissolving power is reduced so that the EBR characteristics are reduced.

[0065] In addition, when R2 of the chemical formula 1 is a C1 alkyl (methyl), it has a higher polarity than other propionate compounds. For example, 3-methoxypropionate methyl ester having a similar structure to 3-ethoxypropionate ethyl ester has a relatively higher polarity (the calculated polarity value of the solubility parameter: 6.7 MPa 1 / 2 ), so a relatively large amount is required to reduce the polarity of the diluent composition, and the PR coating is not uniform due to the high volatility. Therefore, it is preferred that methyl 3-methoxypropionate is not included in the present invention.

[0066] In addition, esters or ester salts such as butyl acetate, amides, aromatic hydrocarbons, etc. cannot achieve linearity of the EBR line of the photosensitive film after the EBR (Edge Bead Remove) process, or even if they can achieve linearity, they cannot achieve the effect of reducing the peak height. Therefore, the thinner composition according to the present invention preferably does not contain esters or ester salts such as butyl acetate, amides, aromatic hydrocarbons, etc.

[0067] d) The calculated polarity value of the solubility parameter is 7 MPa 1 / 2 ~8MPa 1 / 2 Solvent

[0068] The diluent composition of the present invention also comprises a solubility parameter having a polarity calculated value of 7 MPa. 1 / 2 ~8MPa 1 / 2 The inclusion of the solvent increases the polarity of the thinner composition, thereby increasing the dissolution rate of ArF, KrF, EUV and other photoresists to improve the EBR characteristics. However, in order to increase the polarity of the thinner composition, when additional γ-butyrolactone (16.0 MPa 1 / 2 ) A solvent having a higher polarity than cyclopentanone may cause attack on the photoresist, and therefore, γ-butyrolactone is preferably not contained in the present invention.

[0069] The calculated polarity value of the solubility parameter is 7 MPa 1 / 2 ~8MPa 1 / 2 The solvent is preferably selected from ethyl lactate (7.6MPa 1 / 2 ), propylene glycol monomethyl ether (7.5MPa 1 / 2 ) and methyl 2-hydroxyisobutyrate (7.2MPa 1 / 2 ), wherein the polarity calculated value of the solubility parameter is 7 MPa 1 / 2 ~8MPa 1 / 2 The content of the solvent is not limited, but preferably, relative to 100% by weight of the entire C2-C4 alkylene glycol C1-C4 alkyl ether acetate, the polarity calculated value of the solubility parameter contained is 7 MPa. 1 / 2 ~8MPa1 / 2 The content of the solvent is 50 to 100% by weight.

[0070] In order to further improve the effect of the diluent composition of the present invention, it may contain common additives in addition to the above-mentioned components.

[0071] <Photosensitive resin and anti-reflection film removal method>

[0072] The present invention includes a method for removing a photosensitive resin, a method for removing an anti-reflection film, and a method for removing a photosensitive resin and an anti-reflection film.

[0073] The method for removing a photosensitive resin and / or an antireflective film of the present invention utilizes the diluent composition of the present invention.

[0074] According to one embodiment, the photosensitive resin removal method of the present invention comprises: a step of forming a photosensitive resin on a substrate; and a step of removing the photosensitive resin using the thinner composition. In the photosensitive resin removal method of the present invention, the photosensitive resin removal step comprises: partially removing the photosensitive resin formed on the substrate.

[0075] The anti-reflection film removal method of the present invention comprises: a step of forming an anti-reflection film on a substrate; and a step of removing the anti-reflection film using the thinner composition. In the anti-reflection film removal method of the present invention, the anti-reflection film removal step comprises: partially removing the anti-reflection film formed on the substrate.

[0076] In addition, the method for removing the photosensitive resin and anti-reflection film of the present invention comprises: a step of forming a photosensitive resin on a substrate; a step of forming an anti-reflection film on the photosensitive resin; and a step of removing the photosensitive resin and the anti-reflection film using the thinner composition, or comprises: a step of forming an anti-reflection film on a substrate; a step of forming a photosensitive resin on the anti-reflection film; and a step of removing the photosensitive resin and the anti-reflection film using the thinner composition. In the method for removing the photosensitive resin and the anti-reflection film of the present invention, the step of removing the photosensitive resin and the anti-reflection film comprises: partially removing the photosensitive resin and the anti-reflection film formed on the substrate.

[0077] In the method for removing the photosensitive resin and / or anti-reflection film, the step of forming the photosensitive resin and / or anti-reflection film on the substrate can be applied by a known method. In addition, the content of the thinner composition is also applicable to the method for removing the photosensitive resin and / or anti-reflection film.

[0078] Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are intended to be described in more detail, and the following examples do not limit the scope of the present invention.

[0079] Examples 1 to 12 and Comparative Examples 1 to 18: Preparation of diluent composition

[0080] After adding the components in the weight % listed in Tables 1 and 2 below to a mixing tank equipped with a stirrer, the mixture was stirred at 500 rpm for 1 hour at room temperature to prepare diluent compositions of Examples 1 to 12 and Comparative Examples 1 to 18.

[0081]

Table 1

[0082]

[0083]

[0084]

Table 2

[0085]

[0086]

[0087] a) Acetate

[0088] A: Propylene glycol monomethyl ether acetate

[0089] b) Cyclic ketones

[0090] B-1: Cyclopentanone

[0091] B-2: Cyclohexanone

[0092] c) Propionate

[0093] C-1: 3-ethoxypropionic acid ethyl ester (the compound of the following chemical formula 1-1)

[0094]

Chemical formula 1-1

[0095]

[0096] C-2: 3-methoxypropionic acid ethyl ester (the compound of the following chemical formula 1-2)

[0097]

Chemical formula 1-2

[0098]

[0099] C-3: 3-methoxypropionic acid methyl ester (the compound of the following chemical formula 1-3)

[0100]

Chemical formula 1-3

[0101]

[0102] d) The calculated polarity value of the solubility parameter is 7 MPa 1 / 2 ~8MPa1 / 2 Solvent

[0103] D-1: Ethyl lactate (7.6MPa 1 / 2 )

[0104] D-2: Propylene glycol monomethyl ether (7.5MPa 1 / 2 )

[0105] D-3: 2-Hydroxyisobutyric acid methyl ester (7.2MPa 1 / 2 )

[0106] e) Other solvents

[0107] E-1: γ-butyrolactone (16.0MPa 1 / 2 )

[0108] E-2: n-butyl acetate

[0109] E-3: Propyl Propionate

[0110] E-4: N,N-dimethylformamide

[0111] E-5: N-methyl-2-pyrrolidone

[0112] E-6: Dimethyl sulfoxide

[0113] E-7: 1,2,4-Trimethylbenzene

[0114] E-8: Cumene

[0115] E-9: Methyl Ethyl Ketone

[0116] E-10: Methyl amyl ketone

[0117] Experimental Example: Evaluation of properties of diluent compositions

[0118] The properties of the thinner compositions described in Examples and Comparative Examples were evaluated using the four types of photoresists (PR) shown in Table 3 below.

[0119]

Table 3

[0120] distinguish PR Type PR 1 Implanter with Krf PR PR 2 PR A for EUV PR 3 PR B for EUV PR 4 PR C for EUV

[0121] Experimental Example 1: EBR (Edge Bead Removal) Test

[0122] On an 8-inch silicon oxide substrate, the photosensitive resin composition described in Table 2 was coated PR on the entire surface of the wafer under the evaluation conditions of Table 4 below, and an EBR test for removing unnecessary photosensitive films at the edge was performed using the thinner compositions of Examples 1 to 12 and Comparative Examples 1 to 18 under the evaluation conditions of Table 4 below.

[0123] The EBR test was conducted on four types of PR. The diluent compositions of Examples 1 to 12 and Comparative Examples 1 to 18 were supplied at a certain pressure from a pressure barrel equipped with a pressure gauge. The diluent sprayed at a certain pressure was evaluated under the condition of a total spray of 1.5 CC in the EBR process. The substrates after the evaluation were magnified 400 times and 1000 times by an optical microscope to determine the linearity, uniformity and tailing of the EBR line, and the results are shown in Tables 6 and 7 below.

[0124] In addition, for the evaluation samples showing the linearity and uniformity of the EBR line, the film thickness of 25 μm inside and 25 μm outside the wafer was measured using a film thickness meter (Dektak6M, Veeco) with the EBR line of the photosensitive film as the reference, and the peak height was calculated by excluding the average thickness of the photosensitive film after deriving the maximum film thickness value. The results are shown in the following Tables 6 and 7 (reference Figure 1 ).

[0125]

Table 4

[0126]

[0127] Experimental Example 2: RRC (Reducing Resist Coating) Test

[0128] The RRC performance test was performed on the four photoresists in Table 2 using the thinner compositions of Examples 1 to 12 and Comparative Examples 1 to 18. As shown in Table 5, before applying the photoresist on an 8-inch silicon oxide wafer, 2.0 cc of each thinner composition was applied, the substrate was rotated at 500 rpm for 4 seconds to distribute the thinner to the entire surface of the upper part of the wafer, and 0.5 and 0.3 cc of each of the four PRs were applied to implement the RRC process of measuring the coating distribution and consumption of the photoresist according to the thinner, and the results are shown in the following Tables 6 and 7.

[0129]

Table 5

[0130]

[0131]

[0132] EBR and RRC test results

[0133]

Table 6

[0134]

[0135]

[0136]

Table 7

[0137]

[0138]

[0139] <EBR Evaluation Criteria>

[0140] X: The state where the uniformity of the EBR line for the photosensitive film is not present after EBR and tailing occurs (refer to Figure 2a )

[0141] △: The case where the linearity and uniformity of the EBR line for the photosensitive film are not present after EBR (refer to Figure 2b )

[0142] ○: The case where the linearity of the EBR line for the photosensitive film is present after EBR, but the uniformity is not present (refer to Figure 2c )

[0143] ◎: The case where the linearity and uniformity of the EBR line for the photosensitive film are certain after EBR (refer to Figure 2d )

[0144] <Peak Height Result Criteria>

[0145] -: The case where the line uniformity is not present after EBR and thus representative measurement cannot be performed

[0146] X: Peak height The above cases

[0147] △: Peak height The cases

[0148] ○: Peak height The cases

[0149] ◎: Peak height The following cases

[0150] <RRC Evaluation Criteria>

[0151] X: The case where the RRC result is below 80% of the photosensitive film coating on the wafer (refer to Figure 3a )

[0152] △: The case where the RRC result is between 80% and 95% of the photosensitive film coating on the wafer (refer to Figure 3b )

[0153] ○: The case where the RRC result is above 95% of the photosensitive film coating on the wafer, but there are still stains or uncoated parts (refer to Figure 3c )

[0154] ◎: The case where the RRC result is above 95% of the photosensitive film coating on the wafer and there are no stains (refer to Figure 3d )

[0155] Evaluation 1: EBR and peak height evaluation of diluent composition

[0156] Referring to Table 6 and Table 7, the diluent compositions of Examples 1 to 12 of the present invention exhibited excellent EBR characteristics and low peak heights for all photosensitive films. In particular, compared to the polarity calculation value of 7 MPa without including the parameter 1 / 2 ~8MPa 1 / 2 The diluent compositions of Examples 1 to 4 and 12 containing the solvent and the diluent compositions of Examples 5 to 11 additionally containing the solvent showed more excellent EBR characteristics and the peak height was also reduced.

[0157] On the contrary, as described in Comparative Examples 1, 3 and 9, the compositions not containing cyclopentanone cannot ensure the linearity and uniformity of the EBR line; as described in Comparative Examples 2, 4 to 8 and 10 to 18, the compositions containing cyclopentanone but not containing the propionate compound represented by Chemical Formula 1 according to the present invention will result in an increase in peak height and a decrease in the linearity and uniformity of the EBR line.

[0158] Evaluation 2: RRC evaluation of diluent compositions

[0159] Referring to Table 6 and Table 7, the thinner compositions of Examples 1 to 12 of the present invention showed excellent RRC performance on all photosensitive films. On the contrary, it can be confirmed that the thinner compositions of Comparative Examples 1 to 18 have reduced coating properties on some PRs. Therefore, the thinner composition according to the present invention not only shows an effect on a specific photosensitive film, but also provides excellent removal performance on a variety of photosensitive films.

Claims

1. A diluent composition, characterized in that: The invention comprises: a) C2-C4 alkylene glycol C1-C4 alkyl ether acetate; b) cyclopentanone; c) a compound represented by the following chemical formula 1: 【Chemical formula 1】 ； In the chemical formula 1, R1 is a C1~C4 alkyl group, and R2 is a C2~C4 alkyl group; The diluent composition does not contain linear ketones, Relative to the total weight of the diluent composition, the content of C2~C4 alkylene glycol C1~C4 alkyl ether acetate in a) is 30~80% by weight; the content of cyclopentanone in b) is 10~50% by weight; and the content of the compound represented by Chemical Formula 1 in c) is 5~30% by weight.

2. The diluent composition according to claim 1, characterized in that: The compound represented by the chemical formula 1 is ethyl 3-ethoxypropionate.

3. The diluent composition according to claim 1, characterized in that: The C2-C4 alkylene glycol C1-C4 alkyl ether acetate in a) is at least one selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate.

4. The diluent composition according to claim 1, characterized in that: The diluent composition also includes a solubility parameter with a calculated polarity value of 7 MPa. 1 / 2 ~8MPa 1 / 2 of solvent.

5. The diluent composition according to claim 4, characterized in that: The calculated polarity value of the solubility parameter is 7 MPa 1 / 2 ~8 MPa 1 / 2 The solvent is at least one selected from the group consisting of ethyl lactate, propylene glycol monomethyl ether and methyl 2-hydroxyisobutyrate.

6. The diluent composition according to claim 1, characterized in that: The thinner composition is used to remove at least one of a photosensitive resin and an anti-reflection film.

7. The thinner composition according to claim 6, characterized in that: The photosensitive resin is at least one of ArF, KrF and EUV photoresist.

8. A method for removing photosensitive resin, characterized in that: include: A step of forming a photosensitive resin on a substrate; as well as A step of removing the photosensitive resin using the thinner composition according to any one of claims 1 to 7.

9. A method for removing an anti-reflection film, characterized in that: include: forming an anti-reflection film on a substrate; as well as A step of removing the antireflection film using the thinner composition according to any one of claims 1 to 7.

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