Light emitting device structure and method for manufacturing the same

Abstract

A light-emitting device structure and a method for manufacturing the light-emitting device structure are provided. The light-emitting device structure may include: a substrate; one or more light-emitting elements disposed on the substrate, spaced apart from each other, and having a form extending in a direction perpendicular to the substrate; an auxiliary layer disposed on the substrate to expose at least a portion of an upper surface of the substrate and surrounding an outer surface of the light-emitting element; a current spreading layer disposed on the auxiliary layer and in contact with one end of the light-emitting element; a first pad electrically connected to one end of the light-emitting element and disposed on the current spreading layer so as not to overlap with the light-emitting element; and a second pad electrically connected to the other end of the light-emitting element and disposed on the exposed upper surface of the substrate, spaced apart from the auxiliary layer.

Description

Technical Field

[0001] The present disclosure relates to a light emitting device structure and a method of manufacturing the same, and more particularly, to a light emitting device structure for evaluating electrical and optical characteristics of a light emitting element having a micro size and a method of manufacturing the same. Background Art

[0002] As multimedia develops, the importance of display devices is increasing. Therefore, various types of display devices such as organic light emitting diode (OLED) displays and liquid crystal displays (LCD) are being used.

[0003] The display device is a device that displays an image and includes a display panel such as an organic light-emitting display panel or a liquid crystal display panel. Among these, as a light-emitting display panel, the display device may include a light-emitting element. For example, a light-emitting diode (LED) may include an OLED using an organic material as a fluorescent material or an inorganic light-emitting diode using an inorganic material as a fluorescent material, etc.

[0004] OLED uses organic materials as fluorescent materials of light-emitting elements, and its manufacturing process is simple. Therefore, the advantage of OLED is that the display device has a flexible nature. However, it is known that organic materials are susceptible to high temperature driving environments and have relatively low blue light efficiency.

[0005] On the other hand, since the inorganic light emitting diode uses an inorganic semiconductor as a fluorescent material, the inorganic light emitting diode has durability even in a high temperature environment and has high blue light efficiency compared to the OLED. In addition, even in the manufacturing process pointed out as a limitation of the conventional inorganic light emitting diode element, a transfer method using a dielectrophoresis (DEP) method has been developed. Therefore, research on an inorganic light emitting diode having excellent durability and efficiency compared to the OLED is continuously being conducted. Summary of the invention

[0006] Technical issues

[0007] A light-emitting element can be manufactured by growing a semiconductor material on a substrate. The light-emitting element has a micron or nanometer size. When a light-emitting element is manufactured on a substrate, a defect or an emission defect may be generated in the light-emitting element during the manufacturing process. Therefore, before using the light-emitting element to manufacture a display device, it is necessary to evaluate the electrical and optical properties of the light-emitting element, but a light-emitting element with a micron size has the problem of difficulty in such measurement.

[0008] Aspects of the present disclosure provide a light emitting device structure including a light emitting element manufactured by growing a semiconductor crystal to evaluate electrical and optical characteristics of the light emitting element and a method of manufacturing the same.

[0009] It should be noted that the objects of the present disclosure are not limited to the above objects, and other objects of the present disclosure will be apparent to those skilled in the art from the following description.

[0010] Technical Solution

[0011] According to one embodiment of the present disclosure, a light-emitting device structure includes: a substrate; one or more light-emitting elements, which are arranged on the substrate to be spaced apart from each other and have a shape extending in a direction perpendicular to the substrate; an auxiliary layer, which is arranged on the substrate, exposes at least a portion of an upper surface of the substrate, and surrounds an outer surface of the light-emitting element; a current spreading layer, which is arranged on the auxiliary layer and contacts one end of the light-emitting element; a first pad, which is electrically connected to one end of the light-emitting element and is arranged on the current spreading layer so as not to overlap with the light-emitting element; and a second pad, which is electrically connected to the other end of the light-emitting element and is arranged on the exposed upper surface of the substrate to be spaced apart from the auxiliary layer.

[0012] The light emitting device structure may further include: a first region defined as a region overlapping the light emitting element; and a second region defined as a region other than the first region, wherein the auxiliary layer and the current spreading layer include at least a portion of the first region and the second region.

[0013] The auxiliary layer may include an insulating material and may be disposed so that one end of the light emitting element is partially exposed, and the current spreading layer may include a transparent conductive material and may be disposed to surround one end of the light emitting element.

[0014] The first pad may include a first extending portion and a first electrode line connected to the first extending portion, and the first electrode line may have both ends connected to different side portions of the first extending portion and may be disposed in the second region to surround the first region.

[0015] The first extension portion may have a width greater than a width of the first electrode line.

[0016] The second pad may have a predetermined width, and may be disposed to surround an outer circumference of the auxiliary layer.

[0017] The light emitting element may include: a semiconductor crystal having a shape extending in one direction; and an insulating film surrounding an outer peripheral surface of the semiconductor crystal.

[0018] The semiconductor crystal may include a first conductive type semiconductor, a second conductive type semiconductor, an element active layer and an electrode material layer, the first conductive type semiconductor is in contact with a substrate, the second conductive type semiconductor has a polarity different from that of the first conductive type semiconductor, the element active layer is arranged between the first conductive type semiconductor and the second conductive type semiconductor, the electrode material layer is arranged on the second conductive type semiconductor, and the insulating film may be arranged so that the upper surface of the electrode material layer is exposed.

[0019] The auxiliary layer may partially contact the outer surface of the insulating film, the current spreading layer may contact the exposed electrode material layer, and the first pad may be electrically connected to the electrode material layer through the current spreading layer.

[0020] The substrate may include a base substrate and a conductive semiconductor layer disposed on the base substrate, the first conductive type semiconductor may contact the conductive semiconductor layer, and the second pad may be disposed on the conductive semiconductor layer and electrically connected to the first conductive type semiconductor.

[0021] The light emitting element may include a first light emitting element and a second light emitting element spaced apart from the first light emitting element.

[0022] The first region may include a first sub-region and a second sub-region, the first sub-region being a region overlapping with the first light-emitting element, the second sub-region being a region overlapping with the second light-emitting element and spaced apart from the first sub-region, and the second region may include a third sub-region and a fourth sub-region, the third sub-region being located between the first sub-region and the second sub-region, and the fourth sub-region being located at an outer periphery of the first sub-region and the second sub-region.

[0023] The first pad may include: a first extending portion disposed in the third sub-region; a first electrode line disposed in the fourth sub-region; and at least one connecting portion disposed in the third sub-region and configured to link the first extending portion and the first electrode line.

[0024] The first electrode line may be disposed to surround the first sub-region and the second sub-region.

[0025] A connection portion may be provided in the third sub-region to separate the first sub-region from the second sub-region.

[0026] The connecting portion may include a first connecting portion and a second connecting portion, the first connecting portion extending in a first direction, having two ends in contact with the first electrode line, and having a center portion overlapping the first extending portion, the second connecting portion extending in a second direction different from the first direction, in contact with the first electrode line, and having a center portion overlapping the first extending portion, and the first connecting portion and the second connecting portion may cross each other at the first extending portion.

[0027] According to another embodiment of the present disclosure, a method for manufacturing a light-emitting device structure includes: preparing a substrate and one or more light-emitting elements, the light-emitting elements being disposed on the substrate and having a shape extending in a direction perpendicular to the substrate; forming an auxiliary layer on the substrate that is configured to surround an outer surface of the light-emitting element, and forming a current spreading layer disposed on the auxiliary layer and in contact with one end of the light-emitting element; and forming a first pad disposed on the current spreading layer and electrically connected to one end of the light-emitting element, and forming a second pad disposed on the substrate to surround an outer periphery of the auxiliary layer and electrically connected to the other end of the light-emitting element.

[0028] The auxiliary layer may include an insulating material and may be disposed so that one end of the light emitting element is partially exposed, the current spreading layer may include a transparent conductive material and may be disposed to surround one end of the light emitting element, and the first pad may be electrically connected to the one end of the light emitting element through the current spreading layer.

[0029] In forming the first pad, the first pad may include an extension portion and an electrode line connected to the extension portion, the extension portion may be disposed not to overlap the light emitting element, and the electrode line may be disposed to surround a region overlapping the light emitting element.

[0030] The substrate may include a base substrate and a conductive semiconductor layer disposed on the base substrate, and the second pad may be disposed on the conductive semiconductor layer and may be electrically connected to the other end of the light emitting element.

[0031] Additional details of embodiments for solving the above problems are included in the detailed description and drawings.

[0032] Beneficial Effects

[0033] The light emitting device structure according to one embodiment may include a light emitting element, and may include a plurality of pads arranged not to overlap the light emitting element. The plurality of pads may be connected to an external power source and may be electrically connected to both ends of the light emitting element, so that the light emitting device structure may measure electrical and optical characteristics of the light emitting element.

[0034] Therefore, the light emitting device structure is positioned so that the plurality of pads do not overlap the light emitting element, thereby preventing light emitted from the light emitting element from being blocked to accurately measure electrical characteristics or optical characteristics.

[0035] The effects of the present disclosure are not limited to the embodiments set forth herein, and include more various effects in this specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 is a schematic diagram of a light emitting element according to an embodiment.

[0037] Figure 2is a schematic perspective view showing the structure of a light emitting device according to an embodiment.

[0038] Figure 3 It is along Figure 2 A cross-sectional view taken along line II'.

[0039] Figure 4 It is viewed from above Figure 1 A plan view of the light emitting device structure.

[0040] Figure 5 1 is a schematic diagram showing a method of evaluating characteristics of a light emitting element according to an embodiment.

[0041] Figure 6 is a flow chart illustrating a method of manufacturing a light emitting device structure according to one embodiment.

[0042] Figures 7 to 10 is a schematic cross-sectional view illustrating a method of manufacturing a light emitting element in a method of manufacturing a light emitting device structure according to an embodiment.

[0043] Figures 11 to 14 is a schematic cross-sectional view showing a portion of a method of manufacturing a light emitting device structure according to an embodiment.

[0044] Figures 15 to 18 is a plan view of a light emitting device structure according to other embodiments.

[0045] Fig.19 It is shown Fig.18 Schematic perspective view of a light emitting device structure.

[0046] Fig. 20 is a schematic perspective view showing a structure of a light emitting device according to still another embodiment.

[0047] Fig.21 It is along Fig. 20 A cross-sectional view taken along line II-II'.

[0048] Fig. 22 It is viewed from above Fig. 20 A plan view of the light emitting device structure.

[0049] Figure 23 to Figure 26 It shows the manufacturing Fig. 20 A schematic cross-sectional view of a method for structuring a light-emitting device.

[0050] Fig. 27 is a plan view of a light emitting device structure according to yet another embodiment.

[0051] Fig.28 is a plan view of a display device according to an embodiment.

[0052] Fig.29 It is along Fig.28 Cross-sectional views taken along line Ia-Ia', line IIa-IIa' and line IIIa-IIIa'. DETAILED DESCRIPTION

[0053] The present invention will now be described more fully hereinafter with reference to the accompanying drawings in which preferred embodiments of the invention are shown. However, the present invention may be implemented in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art.

[0054] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. The same reference numerals refer to the same components throughout.

[0055] It will be understood that, although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, the first element discussed below may be referred to as the second element without departing from the teachings of the present invention. Similarly, the second element may also be referred to as the first element.

[0056] Hereinafter, embodiments will be described with reference to the accompanying drawings.

[0057] Figure 1 is a schematic diagram of a light emitting element according to an embodiment.

[0058] The light emitting element 300 may include a semiconductor crystal doped with impurities of any conductivity type (e.g., p-type or n-type). The semiconductor crystal may receive an electrical signal applied from an external power source and emit light having a specific wavelength in response to the received electrical signal. The display device 10 ( Fig.28 ) can be performed at each pixel PX ( Fig.28 ) includes a plurality of light emitting elements 300 to display the light emitted by the light emitting elements 300.

[0059] The light emitting element 300 may be a light emitting diode, specifically, the light emitting element 300 may be an inorganic light emitting diode having a size in micrometer units or nanometer units and made of an inorganic material. When the light emitting element 300 is an inorganic light emitting diode, and when a light emitting material having an inorganic crystal structure is disposed between two electrodes facing each other and an electric field is formed in a specific direction, the inorganic light emitting diode may be arranged (or aligned) between two electrodes having polarity formed therebetween. That is, by forming an electric field, the light emitting element 300 having a microscopic size may be arranged on the electrode of the display device 10. The light emitting element 300 arranged on the electrode of the display device 10 may receive a predetermined electrical signal from the electrode, thereby emitting light having a specific wavelength.

[0060] Reference Figure 1 According to one embodiment, the light emitting element 300 may include a plurality of conductive semiconductors 310 and 320, an element active layer 330, an electrode material layer 370, and an insulating film 380. The plurality of conductive semiconductors 310 and 320 may transmit an electrical signal transmitted to the light emitting element 300 to the element active layer 330, and the element active layer 330 may emit light having a specific wavelength.

[0061] Specifically, the light emitting element 300 may include a first conductive semiconductor 310, a second conductive semiconductor 320, an element active layer 330 disposed between the first conductive semiconductor 310 and the second conductive semiconductor 320, an electrode material layer 370 disposed on the second conductive semiconductor 320, and an insulating film 380 disposed around the outer surfaces of the first conductive semiconductor 310 and the second conductive semiconductor 320, the element active layer 330, and the electrode material layer 370. Figure 1 In the embodiment, the light emitting element 300 is shown as having a structure in which a first conductive semiconductor 310, an element active layer 330, a second conductive semiconductor 320, and an electrode material layer 370 are sequentially formed in the length direction thereof, but the present disclosure is not limited thereto. The electrode material layer 370 may be omitted, and in some embodiments, the electrode material layer 370 may be disposed on at least one of the two side surfaces of the first conductive semiconductor 310 and the second conductive semiconductor 320. Figure 1 The description is given with reference to the light emitting element 300 of FIG. 1 , and even when the light emitting element 300 also includes other structures, the description can be applied to the light emitting element 300 to be described below.

[0062] The first conductive semiconductor 310 may be an n-type semiconductor layer. As an example, when the light emitting element 300 emits light having a blue wavelength, the first conductive semiconductor 310 may be composed of a semiconductor layer having a chemical formula In x Al y Ga 1-x-yN (0≤x≤1, 0≤y≤1, and 0≤x+y≤1) semiconductor material. For example, the first conductive semiconductor 310 can be made of at least one selected from InAlGaN, GaN, AlGaN, InGaN, AlN and InN doped with n-type. The first conductive semiconductor 310 can be doped with a first conductive dopant. As an example, the first conductive dopant can be silicon (Si), germanium (Ge), selenium (Se) or tin (Sn), etc. The first conductive semiconductor 310 can have a length ranging from 1.5μm to 5μm, but the present disclosure is not limited thereto.

[0063] The second conductive semiconductor 320 may be a p-type semiconductor layer. As an example, when the light emitting element 300 emits light having a blue wavelength, the second conductive semiconductor 320 may be composed of a semiconductor layer having a chemical formula In x Al y Ga 1-x-y N (0≤x≤1, 0≤y≤1, and 0≤x+y≤1) semiconductor material. For example, the second conductive semiconductor 320 can be made of at least one selected from InAlGaN, GaN, AlGaN, InGaN, AlN and InN doped with p-type. The second conductive semiconductor 320 can be doped with a second conductive dopant. As an example, the second conductive dopant can be magnesium (Mg), zinc (Zn), calcium (Ca) or barium (Ba), etc. The second conductive semiconductor 320 can have a length ranging from 0.08μm to 0.25μm, but the present disclosure is not limited thereto.

[0064] Meanwhile, in the drawings, each of the first conductive type semiconductor 310 and the second conductive type semiconductor 320 is shown as consisting of one layer, but the present disclosure is not limited thereto. In some cases, the first conductive type semiconductor 310 and the second conductive type semiconductor 320 may include more layers depending on the material of the element active layer 330 to be described below.

[0065] The element active layer 330 may be disposed between the first conductive semiconductor 310 and the second conductive semiconductor 320, and may include a material having a single quantum well structure or a multi-quantum well structure. When the element active layer 330 includes a material having a multi-quantum well structure, the element active layer 330 may have a structure in which a plurality of quantum layers and a plurality of well layers are alternately stacked. The element active layer 330 may emit light due to the combination of electron-hole pairs according to an electrical signal applied through the first conductive semiconductor 310 and the second conductive semiconductor 320. As an example, when the element active layer 330 emits light having a blue wavelength, the element active layer 330 may include a material such as AlGaN or AlInGaN. Specifically, when the element active layer 330 has a structure in which quantum layers and well layers are alternately stacked in a multi-quantum well structure, the quantum layer may include a material such as AlGaN or AlInGaN, and the well layer may include a material such as GaN or AlGaN.

[0066] However, the present disclosure is not limited thereto, and the element active layer 330 may have a structure in which a semiconductor material having a high band gap energy and a semiconductor material having a low band gap energy are alternately stacked, or may include other III-group or V-group semiconductor materials according to the wavelength of the emitted light. Therefore, the light emitted by the element active layer 330 is not limited to light having a blue wavelength, and in some cases, the element active layer 330 may emit light having a red or green wavelength. The element active layer 330 may have a length ranging from 0.05 μm to 0.25 μm, but the present disclosure is not limited thereto.

[0067] Meanwhile, light emitted from the element active layer 330 may be emitted not only to the outer surface of the light emitting element 300 in the length direction thereof but also to both sides of the light emitting element 300. Directivity of light emitted from the element active layer 330 is not limited to one direction.

[0068] The electrode material layer 370 may be an ohmic contact electrode. However, the present disclosure is not limited thereto, and the electrode material layer 370 may be a Schottky contact electrode. The electrode material layer 370 may include a conductive metal. For example, the electrode material layer 370 may include at least one selected from aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). The electrode material layer 370 may include the same material or different materials, but the present disclosure is not limited thereto.

[0069] The insulating film 380 may be formed to contact and surround the outer surfaces of the first conductive semiconductor 310, the second conductive semiconductor 320, the element active layer 330, and the electrode material layer 370. The insulating film 380 may perform the function of protecting these components. As an example, the insulating film 380 may be formed to surround the side surface of the component, and may be formed to expose both ends of the light emitting element 300 in the length direction, for example, both ends of the first conductive semiconductor 310 and the electrode material layer 370 are provided. However, the present disclosure is not limited thereto.

[0070] The insulating film 380 may include, for example, silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum nitride (AlN) and aluminum oxide (Al 2 O 3 ) having an insulating property. Therefore, it is possible to prevent an electrical short circuit that may occur when the element active layer 330 is in direct contact with an electrode through which an electrical signal is transmitted to the light emitting element 300. In addition, since the insulating film 380 protects the outer surface of the light emitting element 300 including the element active layer 330, it is possible to prevent a decrease in light emitting efficiency.

[0071] In the drawings, the insulating film 380 is shown to be formed to extend in the length direction of the light emitting element 300 and cover the first conductive type semiconductor 310 to the electrode material layer 370, but the present disclosure is not limited thereto. The insulating film 380 may cover only the first conductive type semiconductor 310, the element active layer 330, and the second conductive type semiconductor 320, or cover a portion of the outer surface of the electrode material layer 370 so that a portion of the outer surface of the electrode material layer 370 may be exposed.

[0072] The insulating film 380 may have a thickness ranging from 0.5 μm to 1.5 μm, but the present disclosure is not limited thereto.

[0073] In addition, in some embodiments, the outer surface of the insulating film 380 may be surface treated. The light emitting element 300 may be formed on an electrode ( Fig.28 ) are arranged between the electrodes and can receive an electrical signal from the electrode to emit light. The light-emitting element 300 can be arranged by spraying on the electrode in a state of being dispersed in a predetermined ink. Here, in order to keep the light-emitting element 300 dispersed and not aggregated with other adjacent light-emitting elements 300 in the ink, the surface of the insulating film 380 can be hydrophobically treated or hydrophilically treated.

[0074] The light emitting element 300 may have a shape extending in one direction. The light emitting element 300 may have a shape such as a nanorod, a nanowire, or a nanotube. In an embodiment, the light emitting element 300 may have a cylindrical shape or a rod shape. However, the shape of the light emitting element 300 is not limited thereto, and the light emitting element 300 may have various shapes such as a regular hexahedron, a cuboid, and a hexagonal column.

[0075] The length l of the light emitting element 300 may be in the range of 1 μm to 10 μm or in the range of 2 μm to 5 μm, and may preferably be about 4 μm. In addition, the light emitting element 300 may have a diameter ranging from 300 nm to 700 nm, and a plurality of light emitting elements 300 included in the display device 10 may have different diameters according to differences in the composition of the element active layer 330. Preferably, the light emitting element 300 may have a diameter of about 500 nm.

[0076] Meanwhile, the light emitting element 300 may be manufactured on a substrate by an epitaxial growth method. A seed layer for forming a semiconductor layer may be formed on the substrate, and a desired semiconductor material may be deposited to grow the semiconductor layer. When the light emitting element 300 is grown by an epitaxial method, in some light emitting elements 300, the semiconductor crystal may not grow smoothly, or may partially form defects. As described above, the light emitting element 300 may include a semiconductor crystal having a micron unit or a nanometer unit of a small size. The light emitting element 300 having a small size has limitations in directly checking whether a defect is formed.

[0077] The light emitting device structure 1000 according to an embodiment may include one or more light emitting elements 300 and a plurality of pads (or "pads") electrically connected to the light emitting elements 300, so that electrical characteristics or optical characteristics of the light emitting elements 300 may be measured. The light emitting device structure 1000 may evaluate defects or emission defects of the light emitting elements 300 before the light emitting elements 300 are disposed in the display device 10. In addition, the light emitting device structure 1000 may measure electrical characteristics or optical characteristics of the light emitting elements 300 to improve characteristics of the light emitting elements 300.

[0078] Figure 2 is a schematic perspective view showing the structure of a light emitting device according to an embodiment. Figure 3 It is along Figure 2 A cross-sectional view taken along line II'.

[0079] Reference Figure 2 and Figure 3 , the light emitting device structure 1000 may include a lower substrate 1100 , a light emitting element 300 , an auxiliary layer 1500 , a current spreading layer 1600 , and a plurality of pads 1200 and 1300 .

[0080] In this specification, the terms "above", "upper part", "top" and "upper surface" refer to the Z-axis direction, and the terms "below", "lower part", "bottom" and "lower surface" refer to the direction opposite to the Z-axis direction. In addition, "left", "right", "upper" and "lower" refer to directions when the display device 10 is viewed in a plan view. For example, the term "right" refers to the X-axis direction, the term "left" refers to the direction opposite to the X-axis direction, the term "upper" refers to the Y-axis direction, and the term "lower" refers to the direction opposite to the Y-axis direction.

[0081] The lower substrate 1100 may support a plurality of components of the light emitting device structure 1000. The light emitting element 300, the auxiliary layer 1500, and the second pad 1300 whose lower surface contacts the lower substrate 1100 may be disposed on the lower substrate 1100. The current spreading layer 1600 and the first pad 1200 may be disposed on the auxiliary layer 1500. In the accompanying drawings, one light emitting element 300 and the auxiliary layer 1500 and the second pad 1300 surrounding the light emitting element 300 are shown as being disposed on the lower substrate 1100. However, the present disclosure is not limited thereto. In some cases, more light emitting elements 300 may be disposed, and other components may also be disposed.

[0082] The lower substrate 1100 may have a quadrilateral shape in a plan view, and may have a hexahedral shape with a predetermined thickness. As shown in the accompanying drawings, the lower substrate 1100 may have a quadrilateral plane shape whose edges extend in a first direction (e.g., X-axis direction) and a second direction (e.g., Y-axis direction). The lower substrate 1100 may have a predetermined thickness in a third direction (e.g., Z-axis direction). However, the present disclosure is not limited thereto. In some cases, the point at which the edge in the first direction and the edge in the second direction meet may be formed into a circle with a predetermined curvature. In addition, the planar shape of the lower substrate 1100 is not limited to a quadrilateral shape, and may be formed into another polygonal shape, a circular shape, or an elliptical shape. As an example, the shape of the lower substrate 1100 may be a circular shape in a plan view, and may be a cylinder with a predetermined thickness.

[0083] In an embodiment, the lower substrate 1100 may have a structure in which a base substrate 1110 , a buffer material layer 1120 , and a sub-semiconductor layer 1130 are stacked.

[0084] The base substrate 1110 may include sapphire (Al 2 O 3 ) substrate and a transparent substrate such as a glass substrate. However, the present disclosure is not limited thereto, and the base substrate 1110 may be formed as a conductive substrate such as a GaN, SiC, ZnO, Si, GaP, or GaAs substrate. The thickness of the base substrate 1110 is not specifically limited, but as an example, the base substrate 1110 may have a thickness ranging from 400 μm to 1500 μm.

[0085] The buffer material layer 1120 is disposed on the base substrate 1110. In the drawings, one buffer material layer 1120 is shown as being stacked, but the present disclosure is not limited thereto, and a plurality of buffer layers may be formed. The buffer material layer 1120 may be configured to reduce the lattice constant difference between the sub-semiconductor layer 1130 and the base substrate 1110. As will be described below, the buffer material layer 1120 may reduce the lattice constant difference with the base substrate 1110, so that the sub-semiconductor layer 1130 or the first conductive type semiconductor layer 3100 ( Figure 7 The crystals (shown in ) grew smoothly.

[0086] As an example, the buffer material layer 1120 may include an undoped semiconductor. The buffer material layer 1120 may include a material substantially the same as the first conductive type semiconductor 310 of the light emitting element 300, and may include a material that is not n-type doped or a material that is not p-type doped. In an embodiment, the buffer material layer 1120 may include at least one selected from undoped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, but the present disclosure is not limited thereto.

[0087] The sub-semiconductor layer 1130 is disposed on the buffer material layer 1120. In the method for manufacturing the light emitting device structure 1000 to be described below, the sub-semiconductor layer 1130 may provide the first conductive type semiconductor layer 3100 ( Figure 7 As an example, the sub-semiconductor layer 1130 may include the same material as the first conductive semiconductor 310 of the light emitting element 300, but the present disclosure is not limited thereto. The sub-semiconductor layer 1130 is not specifically limited as long as the sub-semiconductor layer 1130 includes a material that provides a seed crystal of the first conductive semiconductor 310.

[0088] In addition, the sub-semiconductor layer 1130 may include a conductive material, and may transmit an electrical signal applied from the second pad 1300 to one end of the light emitting element 300, for example, the first conductive type semiconductor 310. A predetermined electrical signal applied through the second pad 1300 may be transmitted to the light emitting element 300 through the sub-semiconductor layer 1130, and may be transmitted to the first pad 1200 through the light emitting element 300 to be measured. That is, the sub-semiconductor layer 1130 may be in contact with the second pad 1300 and the first conductive type semiconductor 310 of the light emitting element 300 to perform a current transmission function.

[0089] In an embodiment, the sub-semiconductor layer 1130 may be substantially the first conductive type semiconductor layer 3100. When the light emitting element 300 to be described below is manufactured, only a portion of the first conductive type semiconductor layer 3100 may be etched and removed, and a layer may be formed on the buffer material layer 1120. The sub-semiconductor layer 1130 may be formed by retaining the first conductive type semiconductor layer 3100 instead of substantially removing it. However, the present disclosure is not limited thereto.

[0090] Meanwhile, the lower substrate 1100 may be a substrate on which the light emitting element 300 is grown in the method of manufacturing the light emitting device structure 1000 to be described below. The light emitting element 300 may be manufactured by depositing or growing semiconductor crystals on the lower substrate 1100. A more detailed description will be given below.

[0091] One or more light emitting elements 300 may be disposed on the lower substrate 1100. The structure of the light emitting element 300 is similar to that described above with reference to Figure 1 The structure described is the same. That is, the light emitting element 300 may have a lower surface with a circular structure, and may have a shape extending from the lower substrate 1100 by a predetermined length in a third direction (e.g., the Z-axis direction). As an example, the light emitting element 300 may include a semiconductor crystal having a rod-like shape. However, the present disclosure is not limited thereto.

[0092] The first conductive semiconductor 310 of the light emitting element 300 may contact the sub-semiconductor layer 1130 of the lower substrate 1100, and the electrode material layer 370 may contact the current spreading layer 1600. The light emitting element 300 having both ends in contact with the sub-semiconductor layer 1130 and the current spreading layer 1600 may be electrically connected to the first pad 1200 and the second pad 1300.

[0093] The outer surface of the light emitting element 300 may be in contact with the auxiliary layer 1500 partially surrounding the light emitting element 300. The light emitting element 300 may be substantially disposed inside the auxiliary layer 1500, and both ends of the light emitting element 300 may be in contact with the sub-semiconductor layer 1130 and the current spreading layer 1600. Since a predetermined electrical signal is transmitted through the sub-semiconductor layer 1130 and the current spreading layer 1600 in contact with both ends of the light emitting element 300, electrical characteristics or optical characteristics of the light emitting element 300 can be measured.

[0094] In the drawings, it is shown that one light emitting element 300 is provided, but the present disclosure is not limited thereto. In the light emitting device structure 1000, one or more light emitting elements 300 may be provided on the lower substrate 1100. In this case, a plurality of light emitting elements 300 are provided to be spaced apart from each other, and in some cases, some light emitting elements 300 may be spaced apart from each other by relatively wide intervals to form an area in which no light emitting element 300 is provided. For a detailed description thereof, reference is made to other embodiments.

[0095] Meanwhile, according to the arrangement of the light emitting element 300 disposed on the lower substrate 1100, the light emitting device structure 1000 may include a first area EA defined as an area overlapping the light emitting element 300 and a second area NEA defined as an area not overlapping the light emitting element 300. In the light emitting device structure 1000, the first area EA may be understood as an overlapping area of ​​the light emitting element 300, and the second area NEA may be understood as a non-overlapping area. However, the first area EA does not necessarily mean only an area overlapping the light emitting element 300. The first area EA may be understood as having a predetermined range including an area in which a plurality of light emitting elements 300 are disposed and an area adjacent thereto.

[0096] The second area NEA may be understood as an area not overlapping the light emitting element 300, and may be understood as an area other than the first area EA. The second area NEA does not necessarily mean only an area not overlapping the light emitting element 300, and may be understood as an area having a predetermined range in which the light emitting element 300 is not disposed.

[0097] Figure 3 It is shown that one light emitting element 300 is disposed in the central area of ​​the lower substrate 1100 and defines one first area EA and two second areas NEA that are symmetrical to each other based on the first area EA. Figure 2 , but the arrangement of the first area EA and the second area NEA may be understood as the second area NEA being disposed to surround the first area EA in a perspective view of the light emitting device structure 1000 .

[0098] The arrangement of the first area EA and the second area NEA is not limited to Figure 3 When one or more light emitting elements 300 are provided as described above, the light emitting device structure 1000 may include one or more first areas EA. Therefore, the second area NEA may be further defined between the plurality of first areas EA. In addition, when the light emitting element 300 is provided adjacent to one side of the lower substrate 1100, the first area EA may be located in an area biased toward one side of the light emitting device structure 1000. In this case, the second area NEA may have an asymmetric structure based on the first area EA.

[0099] The auxiliary layer 1500 is disposed on the lower substrate 1100 to surround the plurality of light emitting elements 300. The auxiliary layer 1500 may have a lower surface in contact with the sub-semiconductor layer 1130 of the lower substrate 1100, and may have a predetermined thickness in a direction (e.g., a Z-axis direction) along which the long axis of the light emitting element 300 extends. The auxiliary layer 1500 may perform a function of fixing the plurality of light emitting elements 300 to the lower substrate 1100 and a function of supporting a member disposed on the auxiliary layer 1500.

[0100] In an embodiment, the auxiliary layer 1500 may be arranged to surround the outer surface of the light emitting element 300 and partially expose the lower substrate 1100. The auxiliary layer 1500 may be arranged so that the side extending in the first direction (e.g., X-axis direction) and the second direction (e.g., Y-axis direction) is recessed inward from the lower substrate 1100 in a plan view. That is, the auxiliary layer 1500 may have an area smaller than the area of ​​the lower substrate 1100 in a plan view so as to be included in the inner side of the lower substrate 1100. As shown in the accompanying drawings, the shape of the auxiliary layer 1500 may have a quadrilateral structure in a plan view similar to that of the lower substrate 1100, and may be a hexahedron with a predetermined thickness. Therefore, the lower substrate 1100 may include an exposed area at the outer periphery of the auxiliary layer 1500. However, the shape of the auxiliary layer 1500 is not limited thereto, and in some cases, the auxiliary layer 1500 may have a cylindrical shape having a circular structure in a plan view.

[0101] The auxiliary layer 1500 may be formed to partially expose the electrode material layer 370 as one end of the light emitting element 300. That is, the thickness of the auxiliary layer 1500 may be smaller than the length l of the long axis of the light emitting element 300, and one end of the light emitting element 300 may protrude from the auxiliary layer 1500. The auxiliary layer 1500 may be disposed to completely overlap the first conductive type semiconductor 310, the element active layer 330, and the second conductive type semiconductor 320 of the light emitting element 300, and partially overlap the electrode material layer 370. Therefore, as will be described below, the current spreading layer 1600 disposed on the auxiliary layer 1500 may simultaneously contact the exposed one end and the outer surface of the electrode material layer 370.

[0102] The shape of the auxiliary layer 1500 may be formed by arranging the auxiliary layer 1500 so as to cover both the lower substrate 1100 and the light emitting element 300, and then performing a predetermined etching process to partially remove the material of a specific region of the auxiliary layer 1500. However, the present disclosure is not limited thereto, and the material constituting the auxiliary layer 1500 may be deposited or applied so that the shape of the auxiliary layer 1500 has the structure shown in the drawings.

[0103] The auxiliary layer 1500 may be disposed in both the first area EA and the second area NEA of the light emitting device structure 1000. Specifically, the auxiliary layer 1500 may be disposed to include the first area EA and partially overlap the second area NEA.

[0104] In the accompanying drawings, the light emitting element 300 is shown to be located in the central area of ​​the auxiliary layer 1500, and the second area NEA overlapping the auxiliary layer 1500 is shown to have a symmetrical structure based on the first area EA. However, the present disclosure is not limited to this. The auxiliary layer 1500 may be arranged so that the light emitting element 300 is adjacent to one side of the auxiliary layer 1500, and therefore, the second area NEA overlapping the auxiliary layer 1500 may have an asymmetric structure. A portion of the first pad 1200 to be described below may be arranged in an area of ​​the second area NEA overlapping the auxiliary layer 1500, and the second pad 1300 may be arranged on the exposed lower substrate 1100.

[0105] In addition, the auxiliary layer 1500 may include an insulating material. The auxiliary layer 1500 may insulate other components or other adjacent light emitting elements 300 so that a predetermined electrical signal transmitted to the light emitting element 300 does not flow to other components or other adjacent light emitting elements 300. Therefore, the light emitting device structure 1000 may include a double insulating material of the auxiliary layer 1500 and the insulating film 380 of the light emitting element 300. As an example, the auxiliary layer 1500 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ) or organic insulating materials, etc., but the present disclosure is not limited thereto.

[0106] The current spreading layer 1600 may be disposed on the auxiliary layer 1500. In a plan view, the current spreading layer 1600 may have the same shape as that of the auxiliary layer 1500. However, in order to expose a portion of the auxiliary layer 1500, the current spreading layer 1600 may be formed such that each side of the current spreading layer 1600 is recessed inward from the auxiliary layer 1500. That is, the current spreading layer 1600 may have an area smaller than that of the auxiliary layer 1500 in a plan view, and may be included inside the auxiliary layer 1500. The auxiliary layer 1500 may have an exposed area formed at the outer periphery of the current spreading layer 1600. However, the present disclosure is not limited thereto.

[0107] The current spreading layer 1600 may have a predetermined thickness so as to cover the plurality of light emitting elements 300. As shown in the drawings, the current spreading layer 1600 may be provided to cover one end of the light emitting element 300 protruding from the auxiliary layer 1500 and to contact the light emitting element 300. As shown in the drawings, the lower surface of the current spreading layer 1600 may partially surround the outer surface of the light emitting element 300 and may contact the end of the electrode material layer 370. The lower surface of the current spreading layer 1600 may have an uneven structure along the protruding region of the light emitting element 300. On the other hand, the upper surface of the current spreading layer 1600 may have a substantially flat shape.

[0108] The current spreading layer 1600 may include a conductive material to spread the transmitted electrical signal. Therefore, as described above, the current spreading layer 1600 may transmit a predetermined electrical signal transmitted from the first pad 1200 to be described below to the light emitting element 300. The current spreading layer 1600 may contact a plurality of light emitting elements 300 at the same time, and thus may uniformly transmit electrical signals to the plurality of light emitting elements 300.

[0109] In addition, the current spreading layer 1600 may include a transparent material. When the optical characteristics of the light emitting element 300 are measured using the light emitting device structure 1000, as described above, in the light emitting element 300, light may be emitted from the element active layer 330. Here, the current spreading layer 1600 may include a transparent material so that the light emitted from the light emitting element 300 may be measured externally.

[0110] In an embodiment, the current spreading layer 1600 may form an ohmic contact with the electrode material layer 370 of the light emitting element 300. However, the present disclosure is not limited thereto, and the current spreading layer 1600 and the electrode material layer 370 may form a Schottky contact. As an example, the current spreading layer 1600 may include a material such as ITO, IZO, or ITZO, but the present disclosure is not limited thereto.

[0111] The light emitting device structure 1000 may include a first pad 1200 and a second pad 1300 to transmit a predetermined electrical signal to the light emitting element 300. The first pad 1200 and the second pad 1300 may be electrically connected to the light emitting element 300. The first pad 1200 and the second pad 1300 connected to an external power source may provide power for measuring emission characteristics of the light emitting element 300. In addition, in some cases, the first pad 1200 and the second pad 1300 may be connected to another external measurement device to provide a signal for measuring electrical characteristics of the light emitting element 300.

[0112] The first pad 1200 is disposed on the current spreading layer 1600. The lower surface of the first pad 1200 may contact the current spreading layer 1600. A predetermined electrical signal transmitted to the first pad 1200 may be transmitted to one end of the light emitting element 300, for example, the electrode material layer 370, through the current spreading layer 1600.

[0113] The second pad 1300 is disposed on the lower substrate 1100. Specifically, the second pad 1300 may be disposed on the sub-semiconductor layer 1130 of the lower substrate 1100 on which the auxiliary layer 1500 is not disposed and is exposed. The lower surface of the second pad 1300 may be in contact with the sub-semiconductor layer 1130. A predetermined electrical signal transmitted to the second pad 1300 may be transmitted to one end of the light emitting element 300, for example, the first conductive type semiconductor 310, through the sub-semiconductor layer 1130. Therefore, the first pad 1200 and the second pad 1300 may be used as electrodes for transmitting electrical signals to the light emitting element 300.

[0114] In an embodiment, the first pad 1200 and the second pad 1300 may include a conductive material or a conductive metal. The first pad 1200 and the second pad 1300 connected to the external power supply may include a conductive material to transmit an electrical signal transmitted from the external power supply to the light emitting element 300. In addition, unlike the current spreading layer 1600, the first pad 1200 may not necessarily include a transparent material. As will be described below, since the first pad 1200 is configured not to overlap with the light emitting element 300, the first pad 1200 does not block the emission of light. Therefore, the first pad 1200 may also include an opaque material.

[0115] As an example, the first pad 1200 and the second pad 1300 may include a material such as Ag, nickel (Ni), Al, palladium (Pd), Mg, Zn, platinum (Pt), Au, Ti, In, ITO, IZO, or ITZO, but the present disclosure is not limited thereto.

[0116] Meanwhile, the first pad 1200 and the second pad 1300 may have a structure for uniformly transmitting an electrical signal to a plurality of light emitting elements 300. For example, when the light emitting device structure 1000 includes a plurality of light emitting elements 300 and the first pad 1200 and the second pad 1300 are disposed adjacent to any light emitting element 300, the electrical signal may not be smoothly transmitted to the light emitting element 300 spaced apart from the first pad 1200 and the second pad 1300 by a relatively long distance. In order to uniformly transmit the electrical signal, the first pad 1200 and the second pad 1300 according to one embodiment may be disposed to surround the first area EA as an area overlapping the light emitting element 300.

[0117] Figure 31 shows a cross section of the light emitting device structure 1000, and shows a plurality of portions where the first pad 1200 and the second pad 1300 are disposed. However, according to an embodiment, the first pad 1200 may include an extension portion 1210 and an electrode line 1220 connected to the extension portion 1210, and the second pad 1300 may be disposed around the outer periphery of the auxiliary layer 1500. Figure 4 A detailed description of the first pad 1200 and the second pad 1300 is performed.

[0118] Figure 4 It is viewed from above Figure 1 A plan view of the light emitting device structure.

[0119] Reference Figure 4 , the first pad 1200 may include an extension portion 1210 and an electrode line 1220 connected to the extension portion 1210 .

[0120] The extension portion 1210 may be in direct contact with an external power source. An electrical signal may be transmitted from the external power source to the extension portion 1210 and to the electrode line 1220 connected to the extension portion 1210. However, since the lower surface of the extension portion 1210 is in contact with the current spreading layer 1600, the transmitted electrical signal may be directly transmitted to the current spreading layer 1600. That is, the electrical signal may be divided and transmitted from the extension portion 1210 to the current spreading layer 1600 and the electrode line 1220.

[0121] The electrode line 1220 is disposed on the current spreading layer 1600 and connected to the extension portion 1210. As described above, the electrode line 1220 may receive an electrical signal from the extension portion 1210 and may transmit an electrical signal to the current spreading layer 1600. The electrical signal transmitted from the external power source may be uniformly transmitted to the current spreading layer 1600 through the extension portion 1210 of the first pad 1200 and the electrode line 1220.

[0122] As shown in the drawings, the shapes of the extension portion 1210 and the electrode line 1220 may be quadrilateral shapes in a plan view, but are not limited thereto. In some cases, the extension portion 1210 may have a circular shape or another polygonal shape, and the electrode line 1220 may be understood in the same manner.

[0123] According to an embodiment, the width dd1 or area of ​​the extension portion 1210 may be larger than the width dd2 or area of ​​the electrode line 1220. As shown in the drawings, the width dd2 of the electrode line 1220 may be relatively narrow, and the width dd1 of the extension portion 1210 may be wide. As will be described below, when the characteristics of the light emitting element 300 are measured using the light emitting device structure 1000, the first pad 1200 may be connected to a probe ( Figure 5Here, the portion of the first pad 1200 connected to the external power source may be an extension portion 1210 having a relatively wide width. The external power source connected to the extension portion 1210 may transmit a predetermined electrical signal, and the electrical signal may be transmitted to the electrode line 1220 having a narrow width through the extension portion 1210.

[0124] The electrode line 1220 may be connected to the extension portion 1210 and may be disposed on the current spreading layer 1600. The extension portion 1210 and the electrode line 1220 may be in direct contact with each other to be connected. The area of ​​the extension portion 1210 in contact with the electrode line 1220 may be an area extending in a straight line from the center of the extension portion 1210 in a first direction (e.g., X-axis direction) and a second direction (e.g., Y-axis direction). That is, the electrode line 1220 may extend in a straight line from the center of the extension portion 1210. However, the present disclosure is not limited thereto, and the extension area of ​​the electrode line 1220 may not be placed on the same straight line as the center of the extension portion 1210.

[0125] In addition, in some cases, the electrode line 1220 may be provided to be spaced apart from the extension portion 1210, and may be connected to the extension portion 1210 through a predetermined connection portion. That is, the electrode line 1220 may not be in direct contact with the extension portion 1210, but may be connected through a connection portion in contact with the extension portion 1210. This will be described below through other embodiments.

[0126] The first pad 1200 may be disposed on the current spreading layer 1600 and may be disposed in the second area NEA so as not to overlap with the light emitting element 300. Specifically, the extension portion 1210 of the first pad 1200 is disposed in the second area NEA and is disposed adjacent to one side of the first area EA. The electrode line 1220 connected to the extension portion 1210 is disposed in the second area NEA and is disposed to surround the outer periphery of the first area EA.

[0127] The extension portion 1210 of the first pad 1200 is disposed on the current spreading layer 1600 so as not to overlap with the light emitting element 300. The extension portion 1210 is disposed adjacent to the first area EA in the second area NEA and is spaced apart from the light emitting element 300. When the extension portion 1210 is disposed away from the first area EA, an area surrounded by an electrode line 1220 to be described below increases, and an electrical signal is inefficiently transmitted to the current spreading layer 1600. Therefore, the extension portion 1210 of the first pad 1200 is disposed adjacent to the light emitting element 300.

[0128] The electrode line 1220 of the first pad 1200 is connected to the extension portion 1210 and is arranged to surround the light emitting element 300. The electrode line 1220 is arranged to surround the first area EA in the second area NEA that does not overlap the light emitting element 300. That is, the electrode line 1220 of the first pad 1200 is substantially arranged at the boundary between the first area EA and the second area NEA to distinguish the first area EA from the second area NEA. Therefore, the first pad 1200 can uniformly transmit the electrical signal to one end of the light emitting element 300, for example, the electrode material layer 370, through the current spreading layer 1600. However, the structure of the first pad 1200 is not limited thereto. The first pad 1200 may have various structures including the extension portion 1210 and the electrode line 1220. As an example, the first pad 1200 may have a substantially grid structure or a branch structure.

[0129] At the same time, as described above, since the first pad 1200 is disposed on the current spreading layer 1600, Figure 3 As shown in FIG. 1 , the first pad 1200 may be disposed on the light emitting element 300 in cross section. Even when the first pad 1200 is disposed in the second area NEA, the first pad 1200 is disposed on the current spreading layer 1600 overlapping the auxiliary layer 1500 in which the light emitting element 300 is located. Figure 4 Unlike that shown in , when the light emitting device structure 1000 includes a plurality of light emitting elements 300, the first pad 1200 may be disposed in the second area NEA formed by a plurality of first areas EA spaced apart from each other in which the light emitting elements 300 are disposed. However, the present disclosure is not limited thereto.

[0130] Therefore, when the characteristics of the light emitting element 300 are measured using the light emitting device structure 1000, it is possible to prevent the measurement from being disturbed by the first pad 1200. For example, when the intensity of light emitted from the light emitting element 300 is measured, and when the light is partially blocked by the first pad 1200, the accurate measurement of the light intensity may be disturbed. Since the first pad 1200 is disposed not to overlap the light emitting element 300, the light emitting device structure 1000 according to one embodiment can accurately measure the electrical characteristics and optical characteristics of the light emitting element 300.

[0131] The second pad 1300 may be disposed on the sub-semiconductor layer 1130 of the lower substrate 1100, and may be disposed to surround the outer periphery of the auxiliary layer 1500. The edges of the second pad 1300 extending in the first direction (e.g., the X-axis direction) and the second direction (e.g., the Y-axis direction) may be connected by surrounding the outer periphery of the auxiliary layer 1500. The edges of the second pad 1300 may be connected at an angle at the point where the edges are connected, but the present disclosure is not limited thereto. The edges may be connected to form a circle with a predetermined curvature. In addition, the second pad 1300 may have a circular shape along the shape of the lower substrate 1100 or the auxiliary layer 1500.

[0132] The second pad 1300 is disposed at the outer periphery of the auxiliary layer 1500 so as to be spaced apart from the outer surface of the auxiliary layer 1500 by a predetermined distance. The second pad 1300 may not directly contact the auxiliary layer 1500 and may contact only the sub-semiconductor layer 1130. The second pad 1300 disposed to be spaced apart from the auxiliary layer 1500 may have a predetermined width dd3.

[0133] Similar to the extension portion 1210 of the first pad 1200, the second pad 1300 may have a probe ( Figure 5 Unlike the first pad 1200, the second pad 1300 may have the same width dd3 and may be disposed around the outer periphery of the auxiliary layer 1500. The width dd3 of the second pad 1300 may be greater than the width dd2 of the electrode line 1220 of the first pad 1200. However, the width dd3 of the second pad 1300 is not limited as long as the width dd3 can be in contact with the probe ( Figure 5 In some cases, the width dd3 of the second pad 1300 may be greater than the width dd1 of the extension portion 1210 of the first pad 1200 .

[0134] The second pad 1300 is disposed in the second area NEA of the lower substrate 1100 in which the light emitting element 300 is not disposed. As shown in the drawings, since the second area NEA is disposed to surround the first area EA, the second pad 1300 may also be disposed to surround the light emitting element 300 in a plan view. The second pad 1300 surrounding the light emitting element 300 at the outer periphery of the area in which the light emitting element 300 is disposed may uniformly transmit an electrical signal to a plurality of light emitting elements 300 through the sub-semiconductor layer 1130.

[0135] As described above, the light emitting device structure 1000 includes a plurality of light emitting elements 300, and includes a first pad 1200 and a second pad 1300 electrically connected to both ends of the light emitting element 300. The first pad 1200 and the second pad 1300 connected to an external power source may transmit an electrical signal to the light emitting element 300 through the current spreading layer 1600 and the sub-semiconductor layer 1130, respectively. Therefore, the light emitting device structure 1000 may evaluate electrical and optical characteristics of the manufactured light emitting element 300.

[0136] Figure 5 1 is a schematic diagram showing a method of evaluating characteristics of a light emitting element according to an embodiment.

[0137] Reference Figure 5, the first pad 1200 and the second pad 1300 of the light emitting device structure 1000 according to one embodiment may be connected to a probe of an external power source. Specifically, the probe may contact the extension portion 1210 of the first pad 1200 and one side of the second pad 1300. The extension portion 1210 wider than the electrode line 1220 may contact the probe. The electrical signal transmitted by the probe in contact with the first pad 1200 is transmitted to the electrode material layer 370 of the light emitting element 300 through the first pad 1200 and the current spreading layer 1600. The electrical signal transmitted by the probe in contact with the second pad 1300 is transmitted to the first conductive type semiconductor 310 of the light emitting element 300 through the second pad 1300 and the sub-semiconductor layer 1130.

[0138] The electrical signal transmitted to the first conductive type semiconductor 310 and the electrode material layer 370 may flow in the light emitting element 300, and thus, the electrical characteristics and optical characteristics of the light emitting element 300 may be measured. The current in the light emitting element 300 or the light emitted from the light emitting element 300 may be measured by a separate measuring device, whereby the light emitting device structure 1000 may evaluate defects, emission defects, or characteristics of the light emitting element 300.

[0139] As an example, when measuring the light L emitted from the light emitting element 300 as shown in the drawing, the light L may be emitted upward from the light emitting device structure 1000. Here, since the first pad 1200 of the light emitting device structure 1000 is disposed not to overlap the light emitting element 300, the light L may be emitted to the outside without being blocked by other members. That is, the light emitting device structure 1000 may accurately measure the intensity of the light L emitted from the light emitting element 300.

[0140] Hereinafter, a method of manufacturing the light emitting device structure 1000 will be described. As described above, the light emitting element 300 may be grown and manufactured on the lower substrate 1100 of the light emitting device structure 1000. That is, the method of manufacturing the light emitting device structure 1000 may include providing the light emitting element 300.

[0141] Figure 6 is a flow chart illustrating a method of manufacturing a light emitting device structure according to one embodiment.

[0142] Reference Figure 6 , the light emitting device structure 1000 can be manufactured by the following steps: providing a light emitting element 300 disposed on a lower substrate 1100 (S100); forming an auxiliary layer 1500 disposed on the lower substrate 1100 to surround the light emitting element 300 and a current spreading layer 1600 disposed on the auxiliary layer 1500 (S200); and then forming a first pad 1200 on the current spreading layer 1600 and forming a second pad 1300 around the outer periphery of the auxiliary layer 1500 on the lower substrate 1100 (S300).

[0143] According to one embodiment, a method for manufacturing a light emitting device structure 1000 may include: providing a lower substrate 1100 and one or more light emitting elements 300 disposed on the lower substrate 1100 and having a shape extending in a direction perpendicular to the lower substrate 1100; forming an auxiliary layer 1500 surrounding the outer surface of the light emitting element 300 and a current spreading layer 1600 disposed on the auxiliary layer 1500 and contacting one end of the light emitting element 300 on the lower substrate 1100; and forming a first pad 1200 disposed on the current spreading layer 1600 and electrically connected to one end of the light emitting element 300 and a second pad 1300 disposed on the lower substrate 1100 to surround the outer periphery of the auxiliary layer 1500 and electrically connected to the other end of the light emitting element 300.

[0144] The method for manufacturing the light emitting device structure 1000 includes: disposing the light emitting element 300 on the lower substrate 1100; and forming the auxiliary layer 1500, the current spreading layer 1600, the first pad 1200 and the second pad 1300 on the lower substrate 1100. First, referring to Figures 7 to 10 It is described that the light emitting element 300 disposed on the lower substrate 1100 is provided.

[0145] Figures 7 to 10 is a schematic cross-sectional view illustrating a method of manufacturing a light emitting element in a method of manufacturing a light emitting device structure according to an embodiment.

[0146] Reference Figure 7 , a semiconductor structure 3000 formed on a lower substrate 1100 is provided. As described above, the lower substrate 1100 may include a base substrate 1110, a buffer material layer 1120, and a sub-semiconductor layer 1130. A detailed description of the lower substrate 1100 will be omitted.

[0147] A semiconductor structure 3000 is formed on the sub-semiconductor layer 1130 of the lower substrate 1100. The semiconductor structure 3000 may include a first conductive type semiconductor layer 3100, an active material layer 3300, a second conductive type semiconductor layer 3200, and a conductive electrode material layer 3700. Figure 7 As shown in , the semiconductor structure 3000 may have a structure in which a first conductive type semiconductor layer 3100 , an active material layer 3300 , a second conductive type semiconductor layer 3200 , and a conductive electrode material layer 3700 are sequentially stacked.

[0148] In the operation to be described below, the semiconductor structure 3000 may be partially etched to form the light emitting element 300. That is, the stacked components of the semiconductor structure 3000 may be understood to correspond to the first conductive semiconductor 310, the element active layer 330, the second conductive semiconductor 320 and the electrode material layer 370 of the light emitting element 300, respectively.

[0149] At the same time, a plurality of conductive semiconductor layers are formed on the lower substrate 1100. A plurality of conductive semiconductor layers can be grown by an epitaxial method of forming a seed crystal and depositing a crystalline material thereon. Here, the conductive semiconductor layer can be formed by an electron beam deposition method, a physical vapor deposition (PVD) method, a chemical vapor deposition (CVD) method, a plasma laser deposition (PLD) method, a dual-type thermal evaporation method, a sputtering method, or a metal organic chemical vapor deposition (MOCVD) method, and the conductive semiconductor layer is preferably formed by a MOCVD method. However, the present disclosure is not limited thereto.

[0150] The precursor material for forming the plurality of conductive type semiconductor layers is not particularly limited within the range that the precursor material can be generally selected to form the target material. As an example, the precursor material may be a metal precursor including an alkyl group such as a methyl group or an ethyl group. For example, the precursor material may be a precursor such as trimethylgallium (Ga(CH 3 ) 3 ), trimethylaluminum (Al(CH 3 ) 3 ) or triethyl phosphate ((C 2 H 5 ) 3 PO 4 ) compounds, but not limited thereto. Hereinafter, a description will be given, and a method or process conditions for forming a plurality of conductive type semiconductor layers will be omitted.

[0151] Next, at least a portion of the semiconductor structure 3000 is etched in a direction perpendicular to the lower substrate 1100 to form a semiconductor crystal 3000 ′.

[0152] The operation of vertically etching the semiconductor structure 3000 to form the semiconductor crystal 3000' may include a patterning process that may be generally performed. As an example, the etching of the semiconductor structure 3000 to form the semiconductor crystal 3000' may include: forming an etching mask layer 2600 and an etching pattern layer 2700 on the semiconductor structure 3000; etching the semiconductor structure 3000 according to the pattern of the etching pattern layer 2700; and removing the etching mask layer 2600 and the etching pattern layer 2700.

[0153] First, refer to Figure 8 , an etching mask layer 2600 and an etching pattern layer 2700 are formed on the semiconductor structure 3000 .

[0154] The etching mask layer 2600 may be used as a mask for sequentially etching the first conductive type semiconductor layer 3100, the active material layer 3300, the second conductive type semiconductor layer 3200, and the conductive electrode material layer 3700 of the semiconductor structure 3000. The etching mask layer 2600 may include a first etching mask layer 2610 including an insulating material and a second etching mask layer 2620 including a metal.

[0155] The etching pattern layer 2700 formed on the etching mask layer 2600 may include one or more nano patterns that are set to be spaced apart from each other. Although only one nano pattern to be set is shown in the drawings, the present disclosure is not limited thereto, and more nano patterns spaced apart from each other may be set. In addition, the intervals between the plurality of nano patterns may be partially different. For example, some nano patterns may be spaced apart from each other at the same interval, and other nano patterns may be spaced apart from each other at different intervals. A detailed description thereof is provided with reference to other embodiments.

[0156] The etching pattern layer 2700 may be used as a mask for continuously etching the semiconductor structure 3000. The method of forming the etching pattern layer 2700 is not particularly limited as long as the method is a method capable of forming a pattern using a polymer, polystyrene balls, or silicon dioxide balls, etc. As an example, the etching pattern layer 2700 may be formed by a method such as photolithography, electron beam lithography, or nanoimprint lithography.

[0157] Next, refer to Fig. 9 , the semiconductor structure 3000 is etched along the nano-pattern of the etching pattern layer 2700 to form a semiconductor crystal 3000 ′, and the etching mask layer 2600 and the etching pattern layer 2700 are removed.

[0158] The formation of the semiconductor crystal 3000' can be performed by a typical method. For example, the etching process can be performed by a dry etching method, a wet etching method, a reactive ion etching (RIE) method, or an inductively coupled plasma reactive ion etching (ICP-RIE) method, etc. Anisotropic etching can be performed by a dry etching method, and therefore, the dry etching method can be suitable for vertical etching. When the above etching method is used, the etchant can be Cl 2 or 2 Etc. However, the present disclosure is not limited thereto.

[0159] In some embodiments, the semiconductor structure 3000 may be etched by a combination of dry etching and wet etching. For example, etching may be first performed in a depth direction by dry etching, and then the etched sidewalls may be located on a flat surface perpendicular to the surface by wet etching, which is an isotropic etching method.

[0160] Subsequently, the light emitting element 300 is formed by forming an insulating film 380 partially surrounding the outer surface of the semiconductor crystal 3000 ′.

[0161] The insulating film 380 may be an insulating material formed on the outer surface of the light emitting element 300, and the insulating film 380 may be formed using a method of applying an insulating material to the outer surface of the vertically etched semiconductor crystal 3000' or immersing the outer surface of the semiconductor crystal 3000' into the insulating material. However, the present disclosure is not limited thereto. As an example, the insulating film 380 may be formed by an atomic layer deposition (ALD) method. As described above, the insulating film 380 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al 2 O 3 ) or aluminum nitride (AlN), etc.

[0162] Although not shown in the drawings, after forming the insulating film 380 on the side surface and the upper surface of the semiconductor crystal 3000' and on the sub-semiconductor layer 1130 exposed to the outside by etching and separating the semiconductor crystal 3000', the insulating film 380 may be partially removed and formed. To this end, a process such as dry etching or etch-back as anisotropic etching may be performed.

[0163] Through the above method, one or more light emitting elements 300 disposed on the lower substrate 1100 may be provided. When the light emitting element 300 is separated from the lower substrate 1100, Figure 1 The light emitting element 300 can Figure 1 The light emitting element 300 is included in the display device 10 to be described below. However, as described above, the light emitting device structure 1000 may be manufactured by forming the auxiliary layer 1500, the current spreading layer 1600, the first pad 1200, and the second pad 1300 on the lower substrate 1100.

[0164] Figures 11 to 14 is a schematic cross-sectional view showing a portion of a method of manufacturing a light emitting device structure according to an embodiment.

[0165] First, refer to Fig.11, a sub-auxiliary layer 1500' is formed to cover the entire area of ​​the lower substrate 1100. In the operation to be described below, the sub-auxiliary layer 1500' may be partially patterned to form the auxiliary layer 1500. The sub-auxiliary layer 1500' may be formed to surround the outer peripheral surface of the light emitting element 300. Unlike the auxiliary layer 1500, the sub-auxiliary layer 1500' may be formed so as not to expose the lower substrate 1100 and one end of the light emitting element 300. That is, the sub-auxiliary layer 1500' may cover the entire area of ​​the lower substrate 1100 and may have a thickness greater than the length l of the major axis of the light emitting element 300. The operation of forming the sub-auxiliary layer 1500' may be performed by a typical deposition process or a patterning process.

[0166] Next, refer to Fig.12 and Fig.13 , the sub-auxiliary layer 1500' is patterned to partially expose one end of the light emitting element 300, and then the sub-auxiliary layer 1500' is patterned to expose the lower substrate 1100, thereby forming the auxiliary layer 1500. The process of patterning the sub-auxiliary layer 1500' may be performed by a typical etching or patterning process. For example, a process including carbon tetrafluoride (CF 4 ) and oxygen (O 2 The sub-auxiliary layer 1500' is patterned by an etchant of TU (T), benzocyclobutene (BCB), or SU-8 through a spin-on-glass (SOG) or etching process, etc. However, the present disclosure is not limited thereto.

[0167] As shown in the drawings, by the above method, the sub-auxiliary layer 1500' can be selectively patterned to expose one end of the electrode material layer 370 of the light emitting element 300 and a portion of the outer surface of the light emitting element 300. Therefore, one end of the light emitting element 300 can protrude from the upper surface of the formed auxiliary layer 1500.

[0168] Next, refer to Fig.14 The current spreading layer 1600 is formed to cover the electrode material layer 370 of the light emitting element 300 protruding from the auxiliary layer 1500. The structure or material of the current spreading layer 1600 is the same as that described above.

[0169] Finally, although not shown in the drawings, a first pad 1200 is formed in the second area NEA on the current spreading layer 1600, and a second pad 1300 is formed on the exposed lower substrate 1100 to surround the auxiliary layer 1500. The arrangement and shape of the first pad 1200 and the second pad 1300 are the same as those described above with reference to FIG. Figures 2 to 4 The arrangement and shape described are the same. A detailed description thereof will be omitted.

[0170] Through the above processes, the light emitting device structure 1000 according to one embodiment may be manufactured. Figures 7 to 14A method of manufacturing a light emitting device structure 1000 including one light emitting element 300 is shown. However, as described above, the light emitting device structure 1000 may include more light emitting elements 300. A detailed description thereof is made with reference to other embodiments.

[0171] Hereinafter, various embodiments of a light emitting device structure 1000 according to one embodiment will be described.

[0172] Figures 15 to 18 is a plan view of a light emitting device structure according to other embodiments.

[0173] As described above, the components of the light emitting device structure 1000 are not limited to Figures 2 to 4 The structure shown in FIG. 1 and may have various shapes. Specifically, the extension portion 1210 of the first pad 1200 and the electrode line 1220 are not limited to Figure 4 The quadrilateral shape in plan view shown in .

[0174] First, refer to Fig.15 According to an embodiment, the electrode line 1220_1 of the first pad 1200_1 may be disposed to surround the first area EA in a circular shape. The electrode line 1220_1 directly contacting the extension portion 1210_1 may be disposed around an area overlapping the light emitting element 300 in the first area EA. The electrode line 1220_1 is disposed to surround the outer periphery of the light emitting element 300 in a circular shape based on the center of the light emitting element 300. Therefore, the boundary between the first area EA and the second area NEA distinguished by the electrode line 1220_1 of the first pad 1200_1 may have a circular shape.

[0175] Figure 4 The electrode line 1220 is shown to extend in a straight line from the center of the extension portion 1210. However, due to Fig.15 The shape of the electrode line 1220_1 of the light emitting device structure 1000_1 shown in FIG. 1 is a circular shape, so each side of the electrode line 1220_1 may not be disposed in a straight line with the center of the extension portion 1210_1, but may be formed to be bent with a predetermined curvature.

[0176] Next, refer to Fig.16 , the extension portion 1210_2 of the first pad 1200_2 of the light emitting device structure 1000_2 connected to the electrode line 1220_2 may have a circular shape in a plan view. The shape of the extension portion 1210_2 is not particularly limited. Fig.16In the embodiment, although the extension portion 1210_2 is shown as having a circular shape, the extension portion 1210_2 may have other shapes. Depending on the method of forming the extension portion 1210_2, the extension portion 1210_2 may have various shapes. The shape of the extension portion 1210_2 is not specifically limited as long as the extension portion 1210_2 contacts the external power source to be able to transmit a predetermined electrical signal.

[0177] Next, refer to Fig.17 , the extension portion 1210_3 of the first pad 1200_3 of the light emitting device structure 1000_3 and the electrode line 1220_3 may have a circular shape. Fig.15 and Fig.16 The description of the described structure is the same. The detailed description thereof will be omitted.

[0178] As described above, the lower substrate 1100 of the light emitting device structure 1000 may also have a circular structure in a plan view. Therefore, the auxiliary layer 1500, the current spreading layer 1600 and the second pad 1300 disposed on the lower substrate 1100 may also have a circular structure in a plan view.

[0179] Reference Fig.18 , the lower substrate 1100_4, the auxiliary layer 1500_4 and the current spreading layer 1600_4 of the light emitting device structure 1000_4 are shown in a plan view as having a circular structure. The second pad 1300_4 may also be provided to surround the outer peripheral surface of the auxiliary layer 1500_4 in a circular structure. The extension portion 1210_4 of the first pad 1200_4 and the electrode line 1220_4 may have the same Figure 4 Same shape as shown in .

[0180] Fig.19 It is shown Fig.18 Schematic perspective view of a light emitting device structure.

[0181] In the embodiment, in the light emitting device structure 1000_4, when the lower substrate 1100_4 is a wafer substrate having a circular shape, the plurality of members may have a curved shape having a predetermined curvature. Figure 2 The light emitting device structure 1000 is different. Fig.19 In the light emitting device structure 1000_4, it can be seen that the lower substrate 1100_4, the auxiliary layer 1500_4 and the current spreading layer 1600_4 have a cylindrical shape. The second pad 1300_4 is formed to surround the outer surface of the cylindrical auxiliary layer 1500_4. Therefore, the second pad 1300_4 has a predetermined thickness, and its central portion has an empty cylindrical shape or an empty circular shape.

[0182] Even when the lower substrate 1100_4 of the light emitting device structure 1000_4 is a circular wafer substrate, the auxiliary layer 1500_4 and the current spreading layer 1600_4 may have a quadrilateral shape or a polygonal shape in a plan view.

[0183] Fig. 20 is a schematic perspective view showing a structure of a light emitting device according to still another embodiment. Fig.21 It is along Fig. 20 A cross-sectional view taken along line II-II'. Fig. 22 It is viewed from above Fig. 20 A plan view of the light emitting device structure.

[0184] As described above, the light emitting device structure 1000 may include one or more light emitting elements 300. The light emitting elements 300 may include light emitting elements disposed relatively adjacent to each other and light emitting elements disposed spaced apart from each other at wide intervals. Therefore, the light emitting device structure 1000 may include more first areas EA and more second areas NEA. Specifically, Figure 3 It is shown that the second area NEA is disposed at both sides of one first area EA in the cross section. Therefore, one first area EA is defined in the auxiliary layer 1500, and the first pad 1200 may be disposed not to overlap the light emitting element 300 in the first area EA.

[0185] On the other hand, when a plurality of light emitting elements 300 are provided, one or more first areas EA are defined in the auxiliary layer 1500, and a second area NEA located between the plurality of first areas EA may be further defined. Therefore, the first pad 1200 may be provided in the second area NEA so as to have a Figures 2 to 4 The structure is different from the structure.

[0186] Reference Figure 20 to Figure 22 , the light emitting device structure 1000_5 according to the embodiment may include a plurality of light emitting elements 300, and thus include more first areas EA and more second areas NEA. Except that the structures of the first area EA, the second area NEA and the first pad 1200_5 are different from those of the light emitting device structure 1000, Fig. 20 The light emitting device structure 1000_5 and Figure 2 The light emitting device structure 1000 of FIG. 1 is the same as that of FIG. 1. Hereinafter, redundant contents will be omitted and differences will be mainly described.

[0187] As the plurality of light emitting elements 300, one or more first light emitting elements 301 disposed relatively adjacent to each other and one or more second light emitting elements 302 disposed spaced apart from the first light emitting elements 301 at relatively wide intervals may be defined.

[0188] exist Fig. 20 , the first light emitting element 301, the second light emitting element 302, the third light emitting element 303 and the fourth light emitting element 304 are shown as being defined as a plurality of light emitting elements 300. The first light emitting element 301, the second light emitting element 302, the third light emitting element 303 and the fourth light emitting element 304 are arranged to be spaced apart from each other on the lower substrate 1100_5. The first light emitting element 301, the second light emitting element 302, the third light emitting element 303 and the fourth light emitting element 304 may be arranged to be spaced apart from each other in a first direction (e.g., an X-axis direction) and a second direction (e.g., a Y-axis direction) in a plan view. The first light emitting element 301, the second light emitting element 302, the third light emitting element 303 and the fourth light emitting element 304 may form a quadrilateral structure in a plan view. However, the present disclosure is not limited thereto, and more light emitting elements may be defined. In addition, the arrangement structure of the first light emitting element 301, the second light emitting element 302, the third light emitting element 303 and the fourth light emitting element 304 is not limited to Fig. 20 The arrangement shown in .

[0189] exist Fig.21 In the embodiment, for the convenience of description, the first light emitting element 301 and the second light emitting element 302 will be shown and described in cross section. Fig. 20 Only the first light emitting element 301 and the second light emitting element 302 are shown and described in the cross section taken along the line II-II′.

[0190] Each of the first light emitting element 301 and the second light emitting element 302 may form a first area EA. Fig.21 As shown in, the light emitting device structure 1000_5 may include a plurality of first areas EA and a plurality of second areas NEA in a cross section. The first light emitting element 301 and the second light emitting element 302 may be arranged to be spaced apart from each other at a predetermined interval, and may form a first-first area EA1 and a first-second area EA2, respectively. The first-first area EA1 and the first-second area EA2 are arranged to be spaced apart from each other, and the second-first area NEA1 is arranged in a separate area between the first-first area EA1 and the first-second area EA2. The second area NEA may include a second-first area NEA1 between the first-first area EA1 and the first-second area EA2 and a second-second area NEA2 located at the outer periphery of the first-first area EA1 and the first-second area EA2.

[0191] At the same time, although Fig.21 Although not shown in the figure, the third light emitting element 303 and the fourth light emitting element 304 may form the first-third area EA3 and the first-fourth area EA4, respectively. Fig. 22As shown in , the first area EA may include a first-first area EA1, a first-second area EA2, a first-third area EA3, and a first-fourth area EA4, and may be defined on the light emitting device structure 1000_5. The first-first area EA1, the first-second area EA2, the first-third area EA3, and the first-fourth area EA4 may be arranged to be spaced apart from each other in a first direction (e.g., an X-axis direction) and a second direction (e.g., a Y-axis direction) in a plan view. The first-first area EA1, the first-second area EA2, the first-third area EA3, and the first-fourth area EA4 may form a quadrilateral structure in a plan view. However, the present disclosure is not limited thereto.

[0192] The auxiliary layer 1500_5 is disposed to surround the outer peripheral surface of the first light emitting element 301 and the second light emitting element 302, and the current spreading layer 1600_5 is disposed to cover one end of the first light emitting element 301 and one end of the second light emitting element 302 protruding from the auxiliary layer 1500_5. The arrangement or structure of the auxiliary layer 1500_5 and the current spreading layer 1600_5 is the same as that described above.

[0193] at the same time, Fig.21 The structure of the first area EA and the second area NEA in the cross section of the light emitting device structure 1000_5 is shown. As described above, although not shown in the drawings, in the perspective view of the light emitting device structure 1000_5, the first area EA may be defined as being surrounded by the second area NEA. Specifically, the second-first area NEA1 and the second-second area NEA2 may be provided to surround the first-first area EA1 to the first-fourth area EA4 and separate the first-first area EA1 to the first-fourth area EA4.

[0194] Therefore, the second-first area NEA1 and a portion of the second-second area NEA2 may be disposed on the auxiliary layer 1500_5 and the current spreading layer 1600_5 on which the first pad 1200_5 is disposed. The second pad 1300_5 may be disposed in the second-second area NEA2 of the second area NEA as an area where the lower substrate 1100_5 is exposed by the auxiliary layer 1500_5.

[0195] Reference Fig. 22 The second pad 1300_5 is disposed on the sub-semiconductor layer 1130 of the lower substrate 1100_5 exposed at the outer periphery of the auxiliary layer 1500_5. The second pad 1300_5 may be disposed in the second-second area NEA2. Since the structure of the second pad 1300_5 is the same as that described above, a detailed description thereof will be omitted.

[0196] The first pad 1200_5 includes an extension portion 1210_5 that contacts a probe of an external power source. The structure or shape of the extension portion 1210_5 is similar to that of the above reference Figure 4 The same structure or shape as described. Figure 4 Different from the light emitting device structure 1000 shown in the figure, in the light emitting device structure 1000_5 according to the embodiment, the first pad 1200_5 may include an extension portion 1210_5, an electrode line 1220_5 and a connecting portion 1230_5, the extension portion 1210_5 is arranged in the second-first area NEA1 formed by the first area EA (for example, the first-first area EA1 to the first-fourth area EA4 spaced apart from each other), the electrode line 1220_5 is spaced apart from the extension portion 1210_5 and is arranged in the second-second area NEA2, and the connecting portion 1230_5 connects the extension portion 1210_5 and the electrode line 1220_5.

[0197] The first pad 1200_5 of the light emitting device structure 1000_5 may include an extension portion 1210_5 and an electrode line 1220_5, and may further include a connection portion 1230_5 connecting the extension portion 1210_5 and the electrode line 1220_5. The extension portion 1210_5 may be disposed at a central portion of the second-first area NEA1 formed by the first-first area EA1 to the first-fourth area EA4 spaced apart from each other on the current spreading layer 1600_5.

[0198] That is, as shown in the drawings, the second-first area NEA1 may include areas extending in a first direction (e.g., X-axis direction) and a second direction (e.g., Y-axis direction) and intersecting each other. The extension portion 1210_5 may be arranged at a central portion of the second-first area NEA1 that intersects each other so as not to overlap with the light emitting element 300. The first light emitting element 301, the second light emitting element 302, the third light emitting element 303, and the fourth light emitting element 304 are arranged symmetrically with each other based on the extension portion 1210_5, and therefore, the first-first area EA1 to the first-fourth area EA4 may also be arranged symmetrically. That is, the first-first area EA1 to the first-fourth area EA4 may be formed in a grid shape. However, the present disclosure is not limited thereto.

[0199] and Figure 4Unlike shown in , the electrode line 1220_5 may not be in direct contact with the extension portion 1210_5, and may be disposed to be spaced apart from the extension portion 1210_5. The electrode line 1220_5 is disposed in the second-second area NEA2, and the second-second area NEA2 is disposed at the outer surface of the auxiliary layer 1500_5. Since the second-second area NEA2 is disposed to surround the first-first area EA1 to the first-fourth area EA4, the electrode line 1220_5 may be disposed not to overlap with the light emitting element 300 and to surround the light emitting element 300. Therefore, the current transmitted through the extension portion 1210_5 may be uniformly transmitted to the current spreading layer 1600_5 in the first-first area EA1 to the first-fourth area EA4. In addition to the fact that the electrode line 1220_5 is spaced apart from the extension portion 1210_5 and is not in direct contact with the extension portion 1210_5, the shape of the electrode line 1220_5 is similar to the embodiment of the present invention. Figure 4 That is, the electrode line 1220_5 may have a predetermined width and a quadrilateral shape in a plan view, but the present disclosure is not limited thereto.

[0200] The connecting portion 1230_5 may connect the extension portion 1210_5 and the electrode line 1220_5 which are arranged to be spaced apart from each other. That is, the connecting portion 1230_5 may be in direct contact with the extension portion 1210_5 and the electrode line 1220_5. The connecting portion 1230_5 may include a portion branching from the extension portion 1210_5 and extending in a first direction (e.g., X-axis direction) and a second direction (e.g., Y-axis direction). For example, the connecting portion 1230_5 may include a first connecting portion 1231_5 extending in a first direction (e.g., X-axis direction) and a second connecting portion 1232_5 extending in a second direction (e.g., Y-axis direction). Both ends of the first connecting portion 1231_5 and the second connecting portion 1232_5 may be in contact with the electrode line 1220_5. As shown in the drawings, the first connecting portion 1231_5 and the second connecting portion 1232_5 may have a shape branching from the extension portion 1210_5 and crossing each other. However, the present disclosure is not limited thereto.

[0201] The first connection portion 1231_5 and the second connection portion 1232_5 may be disposed in the second-first area NEA1. Unlike the extension portion 1210_5, the connection portion 1230_5 is disposed in the second-first area NEA1 between the first areas EA spaced apart from each other. Therefore, the first-first area EA1 to the first-fourth area EA4 may be substantially separated by the first connection portion 1231_5 and the second connection portion 1232_5.

[0202] exist Figure 20 to Figure 22In the embodiment, four groups of light emitting elements 300 are arranged to be spaced apart from each other, and thus, the first pad 1200_5 may form the structure as described above. However, the present disclosure is not limited thereto, and when the light emitting device structure 1000 includes more light emitting elements 300, the arrangement of the first pad 1200_5 may be changed.

[0203] Due to the structure of the first pad 1200_5 in which the first pad 1200_5 is disposed not to overlap the light emitting element 300, the electrical characteristics and optical characteristics of the light emitting element 300 can be accurately measured. In addition, since the first pad 1200_5 includes the extension portion 1210_5, the electrode line 1220_5, and the connection portion 1230_5, the electrical signal can be uniformly transmitted to the electrode material layer 370 of each light emitting element 300 through the current spreading layer 1600_5. The connection portion 1230_5 of the first pad 1200_5 can separate the first area EA, which is an area substantially overlapping the light emitting element 300, and the electrode line 1220_5 can separate the first area EA and the second-second area NEA2 disposed to surround the light emitting element 300.

[0204] Meanwhile, the structures of the first area EA, the second area NEA, and the first pad 1200_5 of the light emitting device structure 1000_5 may be changed according to the structure of the nano-pattern in which the etching pattern layer 2700 is disposed when manufacturing the light emitting element 300. Figure 2 When the light emitting device structure 1000 is Figure 8 As shown in FIG. 2 , it can be seen that the etching pattern layer 2700 includes a nano pattern to form a light emitting element 300. On the other hand, when manufacturing Figure 20 to Figure 22 When the light emitting device structure 1000_5 is formed, an etching pattern layer 2700_2 including one or more nano patterns 2710 and 2720 may be formed. Therefore, in the light emitting device structure 1000_5, light emitting elements 300, for example, first and second light emitting elements 301 and 302 spaced apart from each other at different intervals can be formed.

[0205] Figure 23 to Figure 26 It shows the manufacturing Fig. 20 Hereinafter, in the method of manufacturing the light emitting device structure 1000_5, a description will be given, and description of contents overlapping with the above-described contents will be omitted.

[0206] First, refer to Fig.23In order to etch the semiconductor structure 3000 in a direction perpendicular to the lower substrate 1100_5, the etching pattern layer 2700_5 disposed on the etching mask layer 2600 may include a plurality of nano-patterns 2710 and 2720. The plurality of nano-patterns 2710 and 2720 may be disposed to be spaced apart from each other, and may include a first nano-pattern 2710 and a second nano-pattern 2720 spaced apart from each other at relatively wide intervals.

[0207] Each of the first nano-pattern 2710 and the second nano-pattern 2720 may include nano-patterns spaced apart from each other. As shown in the drawings, among the nano-patterns included in the etching pattern layer 2700_5, the nano-patterns disposed partially adjacent to each other may form the first nano-pattern 2710 and the second nano-pattern 2720. On the other hand, the separation interval between the first nano-pattern 2710 and the second nano-pattern 2720 may be wider than the separation interval between the nano-patterns. Therefore, the semiconductor structure 3000 may be etched at different intervals along the first nano-pattern 2710 and the second nano-pattern 2720.

[0208] Next, refer to Fig.24 and Fig.25 When the semiconductor structure 3000 is etched along the first nano-pattern 2710 and the second nano-pattern 2720, the first semiconductor crystal 3001' and the second semiconductor crystal 3002' may be formed. The insulating film 380 may be formed to surround the outer peripheral surface of the first semiconductor crystal 3001' and the second semiconductor crystal 3002', thereby forming the first light emitting element 301 and the second light emitting element 302.

[0209] Next, refer to Fig.26 , an auxiliary layer 1500_5 and a current spreading layer 1600_5 are formed on the lower substrate 1100_5. As shown in the drawings, the auxiliary layer 1500_5 may be formed to surround the first light emitting element 301 and the second light emitting element 302, and the current spreading layer 1600_5 may be arranged to cover one end of the first light emitting element 301 and one end of the second light emitting element 302. Therefore, the light emitting device structure 1000_5 may include a first area EA (e.g., a first-first area EA1 and a first-second area EA2) and a second area NEA (e.g., a second-first area NEA1 and a second-second area NEA2). Subsequent operations are the same as those described above. A detailed description of the structures of the first pad 1200_5 and the second pad 1300_5 will be omitted.

[0210] Fig. 27 is a plan view of a light emitting device structure according to yet another embodiment.

[0211] Reference Fig. 27, the light emitting device structure 1000_6 may include a plurality of light emitting elements 300, for example, a first light emitting element 301 and a second light emitting element 302. The first pad 1200_6 may include an extension portion 1210_6 having a circular shape, an electrode line 1220_6 disposed to be spaced apart from the extension portion 1210_6 and having a shape substantially the same as that of the extension portion 1210_6, and a connection portion 1230_6 connecting the extension portion 1210_6 and the electrode line 1220_6.

[0212] The extension portion 1210_6 and the electrode line 1220_6 each have a circular structure similar to the above reference Fig.17 The structure described is the same. The connecting portion 1230_6 of the first pad 1200_6 may include a first connecting portion 1231_6 and a second connecting portion 1232_6 branching from the extension portion 1210_6 and extending from the center of the extension portion 1210_6 in a first direction (e.g., X-axis direction) and a second direction (e.g., Y-axis direction). The extension portion 1210_6 of the first pad 1200_6 is disposed in the second-first area NEA1 located at the center portion of the auxiliary layer 1500_6, and the electrode line 1220_6 is disposed in the second-second area NEA2 located at the outer side of the auxiliary layer 1500_6. The connecting portion 1230_6 may be disposed in the second-first area NEA1 through which a plurality of first areas EA (e.g., the first-first area EA1 to the first-fourth area EA4) are spaced apart from each other. The connecting portion 1230_6 may be disposed to separate the first-first area EA1 to the first-fourth area EA4. Therefore, the first connection portion 1231_6 and the second connection portion 1232_6 may cross each other at the extension portion 1210_6, and both ends of the first connection portion 1231_6 and the second connection portion 1232_6 may contact the electrode line 1220_6. Therefore, the extension portion 1210_6 and the electrode line 1220_6 may be connected through the connection portion 1230_6. In addition, the second pad 1300_6 and the current spreading layer 1600_6 may have the same Figure 4 The structures of the second pad 1300 and the current spreading layer 1600 shown in FIG. 1 are the same as those of the second pad 1300 and the current spreading layer 1600 shown in FIG.

[0213] As described above, the light emitting device structure 1000 includes the light emitting element 300, and includes the first pad 1200 and the second pad 1300 disposed not to overlap the light emitting element 300. The light emitting device structure 1000 can prevent the electrical characteristics and optical characteristics of the light emitting element 300 from being blocked by other members, and can accurately measure the electrical characteristics and optical characteristics of the light emitting element 300. As described above, the light emitting element 300 may be included in the display device 10 to emit light having a specific wavelength by an electrical signal transmitted from an electrode. Hereinafter, the display device 10 will be described.

[0214] Fig.28 is a plan view of a display device according to an embodiment.

[0215] Reference Fig.28 , the display device 10 may include one or more regions defined as pixels PX. Each of the plurality of pixels PX may emit light having a specific wavelength from the display device 10 to the outside. Fig.28 In the figure, three pixels PX1, PX2 and PX3 are exemplarily shown, but it is obvious that the display device 10 may also include more pixels PX.

[0216] Although not shown in the drawings, the display device 10 includes a display area and a non-display area. A plurality of pixels PX may be provided in the display area, and a plurality of electrodes 210 and 220 and a light emitting element 300 therebetween may be arranged in each pixel PX. Therefore, in the display area, the light emitting element 300 may display light of a specific color to the outside of the display device 10.

[0217] The non-display area may be defined as an area in which no pixel PX is disposed except for the display area in the display device 10. Various components for driving the light emitting element 300 disposed in the display area may be disposed in the non-display area. As an example, in the non-display area of ​​the display device 10, a line, a circuit unit, a driver, etc. for applying an electrical signal to the display area may be disposed, but the present disclosure is not limited thereto.

[0218] The plurality of pixels PX may include a plurality of electrodes 210 and 220 and one or more light emitting elements 300 that emit light having a specific wavelength to display colors.

[0219] In an embodiment, pixels PX displaying different colors may each include a light emitting element 300 emitting light of a different color. For example, the first pixel PX1 may include a light emitting element 300 configured to emit red light, the second pixel PX2 may include a light emitting element 300 configured to emit green light, and the third pixel PX3 may include a light emitting element 300 configured to emit blue light. However, the present disclosure is not limited thereto.

[0220] The plurality of electrodes 210 and 220 may include a first electrode 210 and a second electrode 220. In an embodiment, the first electrode 210 may be a pixel electrode separated for each pixel PX, and the second electrode 220 may be a common electrode commonly connected along the plurality of pixels PX. One of the first electrode 210 and the second electrode 220 may be an anode of the light emitting element 300, and the other may be a cathode of the light emitting element 300. However, the present disclosure is not limited thereto, and the situation may be the opposite.

[0221] The first electrode 210 and the second electrode 220 may include electrode trunk portions 210S and 220S and one or more electrode branch portions 210B and 220B, wherein the electrode trunk portions 210S and 220S are configured to extend in a first direction D1, and one or more electrode branch portions 210B and 220B branch out from the electrode trunk portions 210S and 220S to extend respectively in a second direction D2 which is a direction intersecting the first direction D1.

[0222] Specifically, the first electrode 210 may include a first electrode trunk portion 210S disposed to extend in the first direction D1 and one or more first electrode branch portions 210B branched from the first electrode trunk portion 210S to extend in the second direction D2. One end of the first electrode trunk portion 210S may be connected to a signal applying pad (not shown), and the other end thereof may extend in the first direction D1 and may be electrically disconnected between the pixels PX.

[0223] Both ends of the first electrode trunk portion 210S of any pixel are spaced apart from adjacent pixels PX and terminate between the pixels PX. The first electrode trunk portion 210S may be arranged on substantially the same extension line as the first electrode trunk portion 210S of adjacent pixels belonging to the same row (e.g., adjacent thereto in the first direction D1). Therefore, the first electrode trunk portion 210S arranged in each pixel PX may apply different electrical signals to the first electrode branch portion 210B.

[0224] The first electrode branch portion 210B may be branched from at least a portion of the first electrode trunk portion 210S, may be disposed to extend in the second direction D2, and may terminate in a state of being spaced apart from the second electrode trunk portion 220S disposed opposite to the first electrode trunk portion 210S.

[0225] The second electrode 220 may include a second electrode trunk portion 220S and a second electrode branch portion 220B, the second electrode trunk portion 220S being arranged to extend in a first direction D1 and being spaced apart from and facing the first electrode trunk portion 210S, and the second electrode branch portion 220B branching out from the second electrode trunk portion 220S and being arranged to extend in a second direction D2. Similar to the first electrode trunk portion 210S, one end of the second electrode trunk portion 220S may also be connected to a signal application pad (not shown). However, the other end of the second electrode trunk portion 220S may extend to a plurality of adjacent pixels PX in the first direction D1. Therefore, the two ends of the second electrode trunk portion 220S of any pixel may be connected to one end of the second electrode trunk portion 220S of the adjacent pixel between the pixels PX.

[0226] The second electrode branch portion 220B may be disposed to be spaced apart from and face the first electrode branch portion 210B, and may terminate in a state of being spaced apart from the first electrode trunk portion 210S. That is, one end of the second electrode branch portion 220B may be connected to the second electrode trunk portion 220S, and the other end thereof may be disposed in the pixel PX in a state of being spaced apart from the first electrode trunk portion 210S.

[0227] Fig.28 It is shown that two first electrode branch portions 210B are provided and the second electrode branch portion 220B is provided between the two first electrode branch portions 210B, but the present disclosure is not limited thereto. More first electrode branch portions 210B and second electrode branch portions 220B may be provided.

[0228] A plurality of light emitting elements 300 may be arranged between the first electrode branch portion 210B and the second electrode branch portion 220B. Specifically, at least some of the plurality of light emitting elements 300 may have one end electrically connected to the first electrode branch portion 210B, and the other end electrically connected to the second electrode branch portion 220B.

[0229] Although in Fig.28 , but the first insulating material layer 510 ( Fig.29 ) may be provided to partially cover the first electrode branch portion 210B, the second electrode branch portion 220B, and the separation space between the first electrode branch portion 210B and the second electrode branch portion 220B. The first insulating material layer 510 may protect each of the electrodes 210 and 220, and may insulate the electrodes 210 and 220 from each other so that the electrodes 210 and 220 do not directly contact each other.

[0230] The contact electrode 260 may be disposed on each of the first electrode branch portion 210B and the second electrode branch portion 220B. However, the contact electrode 260 may be substantially disposed on the first insulating material layer 510 and may overlap the first electrode branch portion 210B and the second electrode branch portion 220B.

[0231] A plurality of contact electrodes 260 may be provided to extend in the second direction D2, and may be provided to be spaced apart from each other in the first direction D1. The contact electrode 260 may contact at least one end of the light emitting element 300. The contact electrode 260 may contact the first electrode 210 or the second electrode 220 to receive an electrical signal. Therefore, the contact electrode 260 may transmit an electrical signal transmitted from each of the electrodes 210 and 220 to the light emitting element 300.

[0232] The contact electrode 260 may include a first contact electrode 261 and a second contact electrode 262 disposed on the electrode branch portions 210B and 220B to partially cover the electrode branch portions 210B and 220B and to contact one end or the other end of the light emitting element 300 .

[0233] The first contact electrode 261 may be disposed on the first electrode branch portion 210B and may contact one end of the light emitting element 300 electrically connected to the first electrode 210. The second contact electrode 262 may be disposed on the second electrode branch portion 220B and may contact the other end of the light emitting element 300 electrically connected to the second electrode 220.

[0234] At the same time, if Fig.28 As shown in FIG. 1 , the first electrode stem portion 210S and the second electrode stem portion 220S may be electrically connected to the thin film transistor 120 or the power line 161 (to be described below) through contact holes (eg, the first electrode contact hole CNTD and the second electrode contact hole CNTS), respectively.

[0235] In addition, although Fig.28 , but the display device 10 may include a second insulating material layer 520 ( Fig.29 ), the third insulating material layer 530 ( Fig.29 ) and the passivation layer 550 ( Fig.29 ), the second insulating material layer 520 is provided to cover at least a portion of each of the electrodes 210 and 220 and the light emitting element 300. Fig.29 Describe the arrangement and structure between them.

[0236] Fig.29 It is along Fig.28Cross-sectional views taken along line Ia-Ia', line IIa-IIa' and line IIIa-IIIa'. Fig.29 Only one pixel PX is shown, but it can be applied to other pixels. Fig.29 A cross section through one end and the other end of any light emitting element 300 is shown.

[0237] Reference Fig.28 and Fig.29 The display device 10 may include a substrate 110, thin film transistors 120 and 140 disposed on the substrate 110, electrodes 210 and 220 disposed on the thin film transistors 120 and 140, and a light emitting element 300. The thin film transistor may include a first thin film transistor 120 and a second thin film transistor 140, and the first thin film transistor 120 and the second thin film transistor 140 may be a driving transistor and a switching transistor, respectively.

[0238] Specifically, the substrate 110 may be an insulating substrate. The substrate 110 may be made of an insulating material such as glass, quartz, or a polymer resin. In addition, the substrate 110 may be a rigid substrate or a flexible substrate that is bendable, foldable, and rollable.

[0239] The buffer layer 115 may be disposed on the substrate 110. The buffer layer 115 may prevent diffusion of impurity ions, prevent penetration of moisture or ambient air, and perform a surface planarization function.

[0240] The semiconductor layer is disposed on the buffer layer 115. The semiconductor layer may include a first active layer 126 of the first thin film transistor 120, a second active layer 146 of the second thin film transistor 140, and an auxiliary material layer 163. The semiconductor layer may include polycrystalline silicon, single crystal silicon, oxide semiconductor, or the like.

[0241] The first gate insulating layer 170 is disposed on the semiconductor layer. The first gate insulating layer 170 covers the semiconductor layer. The first gate insulating layer 170 may be used as a gate insulating film of a thin film transistor.

[0242] The first conductive layer is disposed on the first gate insulating layer 170. The first conductive layer may include a first gate electrode 121 of the first thin film transistor 120 disposed on the first active layer 126 with the first gate insulating layer 170 interposed therebetween, a second gate electrode 141 of the second thin film transistor 140 disposed on the second active layer 146, and a power line 161 disposed on the auxiliary material layer 163.

[0243] The second gate insulating layer 180 is disposed on the first conductive layer. The second gate insulating layer 180 may be an interlayer insulating layer.

[0244] The second conductive layer is disposed on the second gate insulating layer 180. The second conductive layer includes a capacitor electrode 128 disposed on the first gate electrode 121 with the second gate insulating layer 180 interposed therebetween. The capacitor electrode 128 and the first gate electrode 121 may form a storage capacitor. The second conductive layer may include the same type of material as that of the first conductive layer described above.

[0245] The interlayer insulating layer 190 is disposed on the second conductive layer. The interlayer insulating layer 190 may be an interlayer insulating film. In addition, the interlayer insulating layer 190 may perform a surface planarization function. The interlayer insulating layer 190 may include an organic insulating material.

[0246] The third conductive layer is disposed on the interlayer insulating layer 190 , and includes the first drain electrode 123 and the first source electrode 124 of the first thin film transistor 120 , the second drain electrode 143 and the second source electrode 144 of the second thin film transistor 140 , and the power electrode 162 disposed on the power line 161 .

[0247] The first source electrode 124 and the first drain electrode 123 may be electrically connected to the first active layer 126 through a first contact hole 129 passing through the interlayer insulating layer 190, the second gate insulating layer 180, and the first gate insulating layer 170. The second source electrode 144 and the second drain electrode 143 may be electrically connected to the second active layer 146 through a second contact hole 149 passing through the interlayer insulating layer 190, the second gate insulating layer 180, and the first gate insulating layer 170. The power electrode 162 may be electrically connected to the power line 161 through a third contact hole 169 passing through the interlayer insulating layer 190 and the second gate insulating layer 180.

[0248] The via layer 200 is disposed on the third conductive layer. The via layer 200 may be made of an organic material. The surface of the via layer 200 may be flat.

[0249] A plurality of banks 410 and 420 may be disposed on the via layer 200. The plurality of banks 410 and 420 are disposed to be spaced apart from each other and face each other in each pixel PX, and the first electrode 210 and the second electrode 220 may be disposed on the banks 410 and 420 spaced apart from each other. However, the number of banks 410 and 420 is not limited thereto.

[0250] Fig.29 Only the settings in Fig.28 The cross-section of one first bank 410 and one second bank 420 among three banks in each pixel PX is shown in FIG. Fig.29 Another first bank 410 not shown in FIG.

[0251] In addition, the first electrode 210 and the second electrode 220 may include an electrode trunk portion 210S and an electrode branch portion 210B and an electrode trunk portion 220S and an electrode branch portion 220B, respectively. It is understood that the first electrode branch portion 210B and the second electrode branch portion 220B are respectively arranged Fig.29 On the first bank 410 and the second bank 420.

[0252] The plurality of banks 410 and 420 may be made of substantially the same material and formed in one process. In this case, the banks 410 and 420 may form a single grid pattern. The banks 410 and 420 may include polyimide (PI).

[0253] The plurality of banks 410 and 420 may have a structure in which at least a portion thereof protrudes from the via layer 200. The banks 410 and 420 may protrude upward from a flat surface on which the light emitting element 300 is disposed, and at least a portion of such a protruding portion may have an inclination. The shape of the banks 410 and 420 having a protruding structure is not particularly limited.

[0254] The reflective layers 211 and 221 disposed on the banks 410 and 420 may reflect incident light. Light traveling from the light emitting element 300 toward the reflective layers 211 and 221 may be reflected and transmitted in an outward direction of the display device 10 (eg, in an upward direction of the banks 410 and 420).

[0255] Reflective layers 211 and 221 may be disposed on the plurality of banks 410 and 420 .

[0256] The first reflective layer 211 covers the first bank 410, and a portion thereof is electrically connected to the first drain electrode 123 of the first thin film transistor 120 through the fourth contact hole 319_1 passing through the via layer 200. The second reflective layer 221 covers the second bank 420, and a portion thereof is electrically connected to the power electrode 162 through the fifth contact hole 319_2 passing through the via layer 200.

[0257] The reflective layers 211 and 221 may include a material having high reflectivity to reflect light emitted from the light emitting element 300. As an example, the reflective layers 211 and 221 may include a material such as silver (Ag) or copper (Cu), but the present disclosure is not limited thereto.

[0258] The first electrode layer 212 and the second electrode layer 222 may be disposed on the first reflective layer 211 and the second reflective layer 221 , respectively.

[0259] The first electrode layer 212 is directly disposed on the first reflective layer 211. The first electrode layer 212 may have a pattern substantially the same as that of the first reflective layer 211. The second electrode layer 222 is directly disposed on the second reflective layer 221 and is disposed to be spaced apart from the first electrode layer 212. The second electrode layer 222 may have a pattern substantially the same as that of the second reflective layer 221.

[0260] The electrode layers 212 and 222 may include a transparent conductive material. As an example, the electrode layers 212 and 222 may include a material such as ITO, IZO, or ITZO, but the present disclosure is not limited thereto. In some embodiments, the reflective layers 211 and 221 and the electrode layers 212 and 222 may have a structure in which at least one transparent conductive layer made of ITO, IZO, or ITZO and at least one metal layer made of silver or copper are stacked. As an example, the reflective layers 211 and 221 and the electrode layers 212 and 222 may have a laminated structure of ITO / Ag / ITO.

[0261] The first reflective layer 211 and the first electrode layer 212 disposed on the first bank 410 may form the first electrode 210, and the second reflective layer 221 and the second electrode layer 222 disposed on the second bank 420 may form the second electrode 220. The first electrode layer 212 and the second electrode layer 222 may transmit an electrical signal transmitted from the first thin film transistor 120 or the power electrode 162 to the contact electrodes 261 and 262, respectively.

[0262] A first insulating material layer 510 partially covering the first electrode 210 and the second electrode 220 is disposed on the first electrode 210 and the second electrode 220. The first insulating material layer 510 may be disposed to cover most of the upper surfaces of the first electrode 210 and the second electrode 220, and may expose portions of the first electrode 210 and the second electrode 220. In addition, the first insulating material layer 510 may be disposed to cover the space between the first electrode 210 and the second electrode 220, and also partially cover opposite side portions of the first electrode 210 and the second electrode 220 that are opposite to each other.

[0263] The light emitting element 300 is disposed on the first insulating material layer 510. Both side surfaces of the first insulating material layer 510 may be in contact with the electrodes 210 and 220, thereby electrically insulating the electrodes 210 and 220 from each other. Therefore, the first insulating material layer 510 may protect the region overlapping each of the electrodes 210 and 220, and simultaneously may electrically insulate the electrodes 210 and 220 from each other. In addition, the first conductive type semiconductor 310 and the second conductive type semiconductor 320 of the light emitting element 300 may be prevented from directly contacting other base materials, thereby preventing damage to the light emitting element 300.

[0264] One or more light emitting elements 300 may be disposed between the first electrode 210 and the second electrode 220. In the drawings, in cross section, one light emitting element 300 is shown as being disposed between the first electrode 210 and the second electrode 220, but Fig.28 As shown in FIG. 3 , it is apparent that a plurality of light emitting elements 300 may be provided.

[0265] In the light emitting element 300, the first conductive semiconductor 310, the element active layer 330, the second conductive semiconductor 320, and the electrode material layer 370 may be arranged in a direction horizontal to the via layer 200. In other words, the plurality of layers of the light emitting element 300 may be arranged in a lateral direction horizontal to the via layer 200. However, the present disclosure is not limited thereto, and the light emitting element 300 may be arranged between the first electrode 210 and the second electrode 220 such that the stacking direction is reversed.

[0266] The second insulating material layer 520 may be disposed to overlap at least a portion of the light emitting element 300. The second insulating material layer 520 may protect the light emitting element 300 and simultaneously perform a function of fixing the light emitting element 300 between the first electrode 210 and the second electrode 220.

[0267] The second insulating material layer 520 may be disposed to surround the outer surface of the light emitting element 300. The second insulating material layer 520 may extend in the second direction D2 along the space between the first electrode branch portion 210B and the second electrode branch portion 220B, and may be disposed to have an island shape or a linear shape in a plan view.

[0268] In addition, a portion of the material of the second insulating material layer 520 may also be provided in a region where the lower surface of the light emitting element 300 contacts the first insulating material layer 510. When the display device 10 is manufactured, when the light emitting element 300 is arranged on the first insulating material layer 510 and the second insulating material layer 520 is provided on the light emitting element 300, a portion of the material of the second insulating material layer 520 may be formed.

[0269] The second insulating material layer 520 is provided to expose both side surfaces of the light emitting element 300. In this case, the contact electrodes 261 and 262 to be described below may smoothly contact the side surfaces of both ends of the light emitting element 300. However, the present disclosure is not limited thereto, and the length of the second insulating material layer 520 is the same as that of the light emitting element 300, so that both sides thereof may be aligned with each other.

[0270] On the second insulating material layer 520 , a first contact electrode 261 disposed on the first electrode 210 and overlapping at least a portion of the second insulating material layer 520 may be disposed, and a second contact electrode 262 disposed on the second electrode 220 and overlapping at least a portion of the second insulating material layer 520 may be disposed.

[0271] The first contact electrode 261 and the second contact electrode 262 may be respectively disposed on the upper surfaces of the first electrode 210 and the second electrode 220. Specifically, the first contact electrode 261 and the second contact electrode 262 may respectively contact the first electrode layer 212 and the second electrode layer 222 in the region where the first insulating material layer 510 is patterned to partially expose the first electrode 210 and the second electrode 220. In addition, the first contact electrode 261 and the second contact electrode 262 may respectively contact the side surfaces of both end portions of the light emitting element 300 (e.g., the first conductive type semiconductor 310 and the second conductive type semiconductor 320 or the electrode material layer 370).

[0272] The first contact electrode 261 and the second contact electrode 262 may be disposed to be spaced apart from each other on the second insulating material layer 520 or the third insulating material layer 530. Therefore, the first contact electrode 261 and the second contact electrode 262 may receive different powers from the first thin film transistor 120 and the power line 161.

[0273] The contact electrodes 261 and 262 may include a conductive material. For example, the contact electrodes 261 and 262 may include ITO, IZO, ITZO, or aluminum (Al), etc. However, the present disclosure is not limited thereto.

[0274] The third insulating material layer 530 may be disposed on the first contact electrode 261 to electrically insulate the first contact electrode 261 and the second contact electrode 262 from each other. The third insulating material layer 530 may be disposed to cover the first contact electrode 261, and may be disposed not to overlap a partial region of the light emitting element 300 so that the light emitting element 300 may contact the second contact electrode 262.

[0275] Meanwhile, in some embodiments, the third insulating material layer 530 may be omitted in the display device 10. Therefore, the first contact electrode 261 and the second contact electrode 262 may be disposed substantially coplanar with each other and may be electrically insulated from each other by a passivation layer 550 to be described below.

[0276] The passivation layer 550 may be formed on the third insulating material layer 530 and the second contact electrode 262, and may be used to protect the components disposed on the via layer 200 from the external environment. In addition, as described above, when the third insulating material layer 530 is omitted, the passivation layer 550 may be directly formed on the first contact electrode 261 and the second contact electrode 262.

[0277] Each of the first insulating material layer 510, the second insulating material layer 520, the third insulating material layer 530, and the passivation layer 550 may include an inorganic insulating material. For example, the first insulating material layer 510, the second insulating material layer 520, the third insulating material layer 530, and the passivation layer 550 may include an inorganic insulating material such as silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al 2 O 3 ) or aluminum nitride (AlN). The first insulating material layer 510, the second insulating material layer 520, the third insulating material layer 530 and the passivation layer 550 may be made of the same material, or may be made of different materials. The present disclosure is not limited thereto.

[0278] In summarizing the detailed description, those skilled in the art will appreciate that many changes and modifications may be made to the preferred embodiments without departing substantially from the principles of the present invention. Therefore, the preferred embodiments of the disclosed invention are used only in a general and descriptive sense and not for purposes of limitation.

Claims

1. A light emitting device structure, comprising: substrate; one or more light emitting elements disposed on the substrate to be spaced apart from each other and having a shape extending in a direction perpendicular to the substrate; an auxiliary layer, disposed on the substrate, exposing at least a portion of an upper surface of the substrate, surrounding an outer surface of the light emitting element and partially exposing an outer surface of one end of the light emitting element; a current spreading layer, disposed on the auxiliary layer, and a lower surface of the current spreading layer partially surrounds the outer surface of the one end of the light emitting element and contacts the one end of the light emitting element; a first pad electrically connected to the one end of the light emitting element and disposed on the current spreading layer so as not to overlap with the light emitting element; as well as a second pad electrically connected to the other end of the light emitting element and disposed on the exposed upper surface of the substrate to be spaced apart from the auxiliary layer, wherein the outer surface of the one end of the light emitting element protrudes outward from the auxiliary layer, and Wherein, the second pad entirely surrounds the outer periphery of the auxiliary layer in a plan view.

2. The light emitting device structure according to claim 1, further comprising: A first region is defined as a region overlapping the light emitting element; as well as A second area is defined as an area other than the first area, The auxiliary layer and the current spreading layer include at least a portion of the first region and the second region.

3. The light emitting device structure according to claim 2, wherein: The auxiliary layer includes an insulating material, and The current spreading layer includes a transparent conductive material.

4. The light emitting device structure according to claim 3, wherein: The first pad includes a first extending portion and a first electrode line connected to the first extending portion, and The first electrode line has both ends connected to different side portions of the first extending portion, and is disposed in the second region to surround the first region.

5. The light emitting device structure according to claim 4, wherein: The first extension portion has a width greater than a width of the first electrode line.

6. The light emitting device structure according to claim 5, wherein: The second pad has a predetermined width.

7. The light emitting device structure according to claim 2, wherein: The light-emitting elements include: A semiconductor crystal having a shape extending in one direction; and An insulating film surrounds the outer peripheral surface of the semiconductor crystal.

8. The light emitting device structure according to claim 7, wherein: The semiconductor crystal includes a first conductive type semiconductor, a second conductive type semiconductor, an element active layer and an electrode material layer, the first conductive type semiconductor is in contact with the substrate, the second conductive type semiconductor has a polarity different from that of the first conductive type semiconductor, the element active layer is arranged between the first conductive type semiconductor and the second conductive type semiconductor, the electrode material layer is arranged on the second conductive type semiconductor, and The insulating film is provided so that an upper surface of the electrode material layer is exposed.

9. The light emitting device structure according to claim 8, wherein: The auxiliary layer is partially in contact with the outer surface of the insulating film, The current spreading layer is in contact with the exposed electrode material layer, and The first pad is electrically connected to the electrode material layer through the current spreading layer.

10. The light emitting device structure according to claim 8, wherein: The substrate comprises a base substrate and a conductive semiconductor layer disposed on the base substrate, The first conductive type semiconductor is in contact with the conductive semiconductor layer, and The second pad is disposed on the conductive semiconductor layer and is electrically connected to the first conductive type semiconductor.

11. The light emitting device structure according to claim 2, wherein: The light emitting element includes a first light emitting element and a second light emitting element spaced apart from the first light emitting element.

12. The light emitting device structure according to claim 11, wherein: The first region includes a first sub-region and a second sub-region, the first sub-region is a region overlapping the first light-emitting element, the second sub-region is a region overlapping the second light-emitting element and spaced apart from the first sub-region, and The second region includes a third sub-region and a fourth sub-region, the third sub-region is located between the first sub-region and the second sub-region, and the fourth sub-region is located at an outer periphery of the first sub-region and the second sub-region.

13. The light emitting device structure according to claim 12, wherein: The first pad comprises: A first extension portion, disposed in the third sub-region; A first electrode line is arranged in the fourth sub-region; and At least one connecting portion is disposed in the third sub-region and is configured to link the first extending portion and the first electrode line.

14. The light emitting device structure according to claim 13, wherein: The first electrode line is disposed to surround the first sub-region and the second sub-region.

15. The light emitting device structure according to claim 13, wherein: A connection portion is provided in the third sub-region to separate the first sub-region from the second sub-region.

16. The light emitting device structure according to claim 15, wherein: The connecting portion includes a first connecting portion and a second connecting portion, the first connecting portion extending in a first direction, having both ends in contact with the first electrode line, and having a center portion overlapping with the first extending portion, the second connecting portion extending in a second direction different from the first direction, contacting the first electrode line, and having a center portion overlapping with the first extending portion, and The first connection portion and the second connection portion cross each other at the first extension portion.

17. A method for manufacturing a light emitting device structure, the method comprising: preparing a substrate and one or more light-emitting elements, the light-emitting elements being disposed on the substrate and having a shape extending in a direction perpendicular to the substrate; forming an auxiliary layer on the substrate, the auxiliary layer being configured to surround the outer surface of the light emitting element and partially expose the outer surface of one end of the light emitting element, and forming a current spreading layer disposed on the auxiliary layer and in contact with the one end of the light emitting element, and the lower surface of the current spreading layer partially surrounds the outer surface of the one end of the light emitting element; as well as forming a first pad disposed on the current spreading layer and electrically connected to the one end of the light emitting element, and forming a second pad disposed on the substrate to surround the outer periphery of the auxiliary layer and electrically connected to the other end of the light emitting element, wherein the outer surface of the one end of the light emitting element protrudes outward from the auxiliary layer, and Wherein, the second pad entirely surrounds the outer periphery of the auxiliary layer in a plan view.

18. The method according to claim 17, wherein: The auxiliary layer comprises an insulating material, The current spreading layer includes a transparent conductive material, and The first pad is electrically connected to the one end of the light emitting element through the current spreading layer.

19. The method according to claim 18, wherein: In the forming of the first pad, the first pad includes an extension portion and an electrode line connected to the extension portion, The extending portion is arranged not to overlap with the light emitting element, and The electrode line is disposed to surround a region overlapping the light emitting element.

20. The method according to claim 19, wherein: The substrate includes a base substrate and a conductive semiconductor layer disposed on the base substrate, and The second pad is disposed on the conductive semiconductor layer and is electrically connected to the other end of the light emitting element.

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