Laser device

Abstract

The laser device of the present invention comprises an edge-emitting semiconductor laser chip, the edge-emitting semiconductor laser chip comprises a long strip-shaped light-emitting area, the direction of the light-emitting area parallel to the junction plane is a slow axis, the direction perpendicular to the junction plane is a fast axis, the light-emitting angle of the fast axis is greater than the slow axis, and the light-emitting half angle of the fast axis is A, and also comprises a light-guiding rod, the light-guiding rod is arranged on one side of the light-emitting area of ​​the edge-emitting semiconductor laser chip, one end face of the light-guiding rod faces the light-emitting area, the end face is used to receive the laser light emitted by the light-emitting area, the numerical aperture Na of the light-guiding rod satisfies the condition Na>sin(A), and the laser light is reflected and propagated inside the light-guiding rod after entering the light-guiding rod; one end of the light-guiding rod of the present invention collects the laser light emitted by the edge-emitting semiconductor laser chip, and the laser light entering the light-guiding rod is collected and emitted from the other end of the light-guiding rod after several reflections and angle twisting, and the emitted laser light obtains an ideal circularly symmetrical surface distribution. The laser device has a small volume, low processing and manufacturing cost, simple debugging and calibration during installation, and is easy to promote and apply.

Description

Technical Field

[0001] The present invention relates to the technical field of laser devices. Specifically, it relates to a device for collecting and emitting the divergent laser emitted by an edge-emitting semiconductor laser chip. Background Art

[0002] With the development of laser illumination technology, the demand and application of laser devices are becoming more and more extensive. The laser emitted by an edge-emitting semiconductor laser chip has a slow axis parallel to the junction plane and a fast axis perpendicular to the junction plane. The emission angle of the fast axis is greater than that of the slow axis. The difference in the emission angles of the fast axis and the slow axis results in the laser beam emitted by the edge-emitting semiconductor laser chip being a divergent strip-shaped beam, which makes the application rate of the edge-emitting semiconductor laser chip in laser devices not high. Especially in the field of illumination, the laser device must adjust the angular distributions of the fast axis and the slow axis.

[0003] The existing technologies used to adjust the above angular distributions in laser devices generally have complex structures, large volumes, low yields, and difficulties in popularization and application. For example, Patent Publication No. CN104991347A discloses a laser shaping illuminator based on a microlens array, which includes a collimation system, a microlens array group, and a beam expansion system. This patent requires the cooperation of the collimation system, the microlens array group, and the beam expansion system. The structure of this patent is complex, difficult to calibrate during the assembly process, and has a large volume and high difficulty in popularization and application. Summary of the Invention

[0004] The purpose of the present invention is to overcome the deficiencies of the above traditional technologies. In view of the deficiencies of the prior art, a laser device with the function of adjusting the angular distributions of the fast axis and the slow axis of the laser beam emitted by an edge-emitting semiconductor laser chip is invented.

[0005] The purpose of the present invention is achieved by the following technical measures: A laser device includes an edge-emitting semiconductor laser chip. The edge-emitting semiconductor laser chip includes a strip-shaped light-emitting area. The direction parallel to the junction plane of the light-emitting area is the slow axis, and the direction perpendicular to the junction plane is the fast axis. The emission angle of the fast axis is greater than that of the slow axis. The half emission angle of the fast axis is A. The laser device further includes a light guide rod. The light guide rod is arranged on one side of the light-emitting area of the edge-emitting semiconductor laser chip. One end face of the light guide rod faces the light-emitting area, and this end face is used to receive the laser emitted by the light-emitting area. The numerical aperture Na of the light guide rod satisfies the condition Na > sin(A). After the laser enters the light guide rod, it is reflected and propagated inside the light guide rod;

[0006] The length of the light-emitting area is L. The light guide rod is circular with an end face diameter of D or elliptical with a major axis length of D. The length of the light guide rod is T, where L < D ≤ 5L and T ≥ 3nD, where n is the refractive index of the light guide rod.

[0007] As an improvement of the above technical solution: The length of the light guide rod satisfies D ≤ 2L.

[0008] As an improvement of the above technical solution: the distance between the end surface of the light guide rod facing the light emitting area and the light emitting area is S, and S<(D / 2) / tan(A).

[0009] Due to the adoption of the above technical solution, compared with the prior art, the advantages of the present invention are: the light guide rod of the present invention collects the laser light emitted by the edge-emitting semiconductor laser chip at one end, collects the laser light entering the light guide rod, and after several reflections and angle twists, emits it from the other end of the light guide rod, and the emitted laser light obtains an ideal circularly symmetrical surface distribution. The laser device is small in size, low in processing and manufacturing cost, simple in debugging and calibration during installation, and easy to promote and apply.

[0010] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Attached Figure 1 It is a front view of one embodiment of the laser device.

[0012] Attached Figure 2 This is the relationship between the length of the light guide rod and the twist.

[0013] Attached Figure 3 It is a schematic diagram of the internal reflection angle a of the light guide rod and the distance T between the light guide rod and the light-emitting area.

[0014] Attached Figure 4 is a cross-sectional view of another embodiment of a laser device.

[0015] Attached Figure 5 is a cross-sectional view of another embodiment of a laser device.

[0016] Attached Figure 6 yes Figure 5 Top view of the .

[0017] Attached Figure 7 It is a structural schematic diagram of a light guide rod positioning seat, an edge-emitting semiconductor laser chip, and a light guide rod.

[0018] Attached Figure 8 yes Figure 7 AA view of the .

[0019] Attached Fig. 9 is a cross-sectional view of another embodiment of a laser device.

[0020] Attached Fig.10 It is a front view of another embodiment of the laser device. DETAILED DESCRIPTION

[0021] Embodiment 1: As attached Figure 1As shown, the laser device includes an edge-emitting semiconductor laser chip 113, and the edge-emitting semiconductor laser chip 113 includes a long strip light-emitting area for emitting laser light, and the long strip light-emitting area emits laser light 121. The direction of the laser light 121 parallel to the junction plane of the light-emitting area is called the slow axis, and the direction perpendicular to the junction plane of the light-emitting area is called the fast axis. Among them, the light-emitting angle in the fast axis direction is greater than the slow axis, and the light-emitting half angle of the laser light 121 in the fast axis direction is A. Since the light-emitting angles in the fast axis and slow axis directions of the edge-emitting semiconductor laser chip 113 are different, when the laser device is used in the field of lighting technology, it is necessary to adjust the laser light 121 emitted by the light-emitting area in the fast axis direction and the slow axis direction. The laser device forms a circular light spot suitable for the field of lighting technology.

[0022] A light guide rod 112 is provided on one side of the light emitting area of ​​the edge emitting semiconductor laser chip 113, and the light emitting area is arranged opposite to one of the end faces of the light guide rod 112. The end face is used to collect the laser light 121 emitted by the light emitting area, and the collected laser light 121 is transmitted along the length direction of the light guide rod 112. Among them, the laser light 121 is continuously reflected on the inner wall of the light guide rod 112, and finally emitted from the other end face of the light guide rod 112. The laser light 121 forms a laser beam 122 after being emitted from the light guide rod 112. In order to avoid the incident laser light 121 from being refracted on the inner wall of the light guide rod 112 and the phenomenon of light leakage, the numerical aperture Na of the light guide rod 112 is greater than sin (A).

[0023] The length of the long strip light emitting area of ​​the edge emitting semiconductor laser chip 113 is L, and the end face of the light guide rod 112 is circular or elliptical. When the end face of the light guide rod 112 is circular, the diameter of the circular end face is D, and when the end face of the light guide rod 112 is elliptical, the length of the major axis of the ellipse is D. The length of the light guide rod 112 is T, and the refractive index of the light guide rod 112 is n.

[0024] Figure 2 The transmission and reflection of the laser 121 in the cross section of the light guide rod 112 are shown. Figure 2 113a is the light-emitting area, and the divergence angle in the fast axis direction is significantly greater than the divergence angle in the slow axis direction. The laser 121 transmitted in the horizontal direction (fast axis direction) of the light-emitting area 113a will be gradually reflected and twisted to be transmitted along the slow axis direction during the reflection process on the inner wall of the light guide rod 112. Figure 2 In the vertical direction (slow axis direction), the light emission angle is very small, and the light emission is concentrated near the center of the cross section of the light guide rod 112. For the slow axis direction, it takes a long distance to be incident on the inner wall of the light guide rod 112. Even if the laser light 121 in the slow axis direction is incident on the inner wall of the light guide rod 112, the twist angle after reflection is very small, and the angle twist of the laser light 121 can be ignored.

[0025] Let's take a few typical lasers 121a~121c as examples. Laser 121a is emitted from a position close to the center of the cross section of the light guide rod 112. Laser 121a will be twisted from the fast axis direction to the direction close to the slow axis after three reflections, and it is difficult to twist laser 121a. Laser 121b is emitted from a position far away from the center of the cross section of the light guide rod 112, specifically, from a position half the radius of the light guide rod 112. Laser 121b is twisted from the fast axis direction to the slow axis direction after two reflections. Laser 121c is emitted from a position close to the edge of the light guide rod 112. Laser 121c only needs one reflection to twist from the fast axis direction to the slow axis direction. By Figure 2 It can be seen that the light guide rod 112 has different angle twisting effects on lasers 121 with different incident positions. It can be seen that the closer the laser 121 emitted by the light-emitting area is to the center of the cross section of the light guide rod 112, the smaller the angle twisted by each reflection, and the more reflections are required to twist to the slow axis direction.

[0026] In summary, the light emitted along the fast axis can be quickly twisted in the light guide rod 112 to emit along the slow axis, so that the luminous angles along the fast axis and along the slow axis are close, thereby achieving a circular light spot. When the length L of the luminous area is close to the cross-sectional diameter D of the light guide rod 112, more spots will appear. Figure 2 For the light rays 121b and 121c in the middle that are emitted from a position far from the center of the cross section of the light guide rod 112 and reflected and propagated inside the light guide rod 112, the angle twisting effect of the laser 121 emitted from the light emitting area is the most obvious, that is, the light emitted along the fast axis is more easily twisted to be emitted along the slow axis. In this way, the number of reflections of the laser 121 required for the twist in the light guide rod 112 is the least, so the required length of the light guide rod 112 is the shortest.

[0027] The applicant has conducted several sets of experiments, taking the light guide rod 112 with a circular cross section as an example. In this experiment, light guide rods 112 with different cross-sectional diameters are used. When the length of the light guide rod 112 changes, the change in the luminous full angle ratio (W) of the emitted laser in the fast axis direction and the slow axis direction is observed. When W=1, it means that the luminous angles in the fast axis direction and the slow axis direction are the same, and a circular light spot can be obtained in the far field.

[0028] like Figure 3As shown, the laser emitted from the light-emitting area is reflected several times after entering the light guide rod 112, and the reflection angle is a. It is known that the fast axis emission half angle of the light-emitting area is A, and the refractive index of the light guide rod 112 is n (the refractive index of the commonly used quartz light guide rod core = 1.46). It can be seen that a = arcsin (sinA / n), and when a is very small, the approximate equation a = A / n = tan (a) is derived. Because the length of the light guide rod 112 is T, the number of reflections after the laser enters the light guide rod 112 is m = Ttan (a) / D = AT / nD. According to the above formula, it can be deduced that the length of the light guide rod 112 is T = (m / A) nD. The length T of the light guide rod 112 is proportional to the number of reflections of the laser in the light guide rod 112. The more reflections, the longer the length T of the light guide rod 112.

[0029] In order to obtain the relationship between the cross-sectional diameter D of the light guide rod 112, the length L of the light emitting area, the refractive index n of the light guide rod 112, and the length T of the light guide rod 112, the following experiment was conducted:

[0030] The cross-sectional diameters of the light guide rod 112 used in the experiment are respectively: D1-D8, where D1=0.048mm, D2=0.06mm, D3=0.08mm, D4=0.1mm, D5=0.12mm, D6=0.14mm, D7=0.16mm, D8=0.18mm, and D9=0.2mm. The long side L of the light emitting area of ​​the edge emitting semiconductor laser chip 113 is 0.04mm, the typical full angle of light emission in the fast axis direction of the edge emitting semiconductor laser chip 113 is 48°, the typical full angle of light emission in the slow axis direction is 9°, and the initial value of the fast axis and slow axis full angle of light emission of the edge emitting semiconductor laser chip 113 is W=16 / 3.

[0031] For the light guide rod 112 with a cross-sectional diameter of D1=0.048mm, the cross-sectional diameter D1 of the light guide rod 112 is 1.2 times the length of the long side L of the light-emitting area of ​​the edge-emitting semiconductor laser chip 113. At this time, when the length T of the light guide rod 112 is 2.7nD, W=1.6, and it can be seen that the luminous angle has been greatly improved compared with the initial long strip light spot of W=16 / 3. When the length T of the light guide rod 112 is 5.4nD, W=1, and a perfect circular symmetrical angular distribution can be formed, that is, a circular light spot is formed in the far field. It can be seen that when D1 / L=1.2, the length T of the light guide rod 112 only needs to be 2.7nD (2.7nD=0.2mm in this embodiment) to greatly compress the aspect ratio of the far-field light spot; and the perfect circular light spot can be achieved only when the length T of the light guide rod 112 is 5.4nD (5.4nD=0.4mm in this embodiment).

[0032] For the light guide rod 112 with a cross-sectional diameter D2 = 0.06 mm, the cross-sectional diameter D2 of the light guide rod 112 is 1.5 times the length of the long side L of the light-emitting area of ​​the edge-emitting semiconductor laser chip 113. At this time, when the length T of the light guide rod 112 is 2.5nD, W=2, and it can be seen that the luminous angle has been greatly improved compared to the initial long strip light spot of W=16 / 3. When the length T of the light guide rod 112 is 4.4nD, W=1.3, it can be seen that the luminous angle has been significantly improved, and the far-field light spot is close to a circle. When the length T of the light guide rod 112 is 10nD, W=1, and a perfect circularly symmetrical angular distribution can be formed, that is, a circular light spot is formed in the far field. It can be seen that when D2 / L=1.5, the length T of the light guide rod 112 only needs to be 2.5nD (2.5nD=0.24mm in this embodiment) to greatly compress the aspect ratio of the far-field light spot; and the length T of the light guide rod 112 only needs to be 10nD (10nD=0.96mm in this embodiment) to achieve a perfect circular light spot.

[0033] For the light guide rod 112 with a cross-sectional diameter D3=0.08mm, the cross-sectional diameter D3 of the light guide rod 112 is twice the length of the long side L of the light-emitting area of ​​the edge-emitting semiconductor laser chip 113. At this time, when the length T of the light guide rod 112 is 4.1nD, W=2, and it can be seen that the luminous angle has been greatly improved compared with the initial long strip light spot of W=16 / 3. When the length T of the light guide rod 112 is 10.7nD, W=1, and a perfect circular symmetrical angular distribution can be formed, that is, a circular light spot is formed in the far field. It can be seen that when D3 / L=2, the length of the light guide rod 112 only needs to be 4.1nD (4.1nD=0.5mm in this embodiment) to greatly compress the aspect ratio of the far-field light spot; and the perfect circular light spot can be achieved only when the length T of the light guide rod 112 is 10.7nD (10.7nD=1.3mm in this embodiment).

[0034] For the light guide rod 112 with a cross-sectional diameter of D4=0.1mm, the cross-sectional diameter D4 of the light guide rod 112 is 2.5 times the length of the long side L of the light-emitting area of ​​the edge-emitting semiconductor laser chip 113. At this time, when the length T of the light guide rod 112 is 6.6nD, W=2, and it can be seen that the luminous angle has been greatly improved compared with the initial long strip light spot of W=16 / 3. When the length T of the light guide rod 112 is 13nD, W=1, and a perfect circular symmetrical angular distribution can be formed, that is, a circular light spot is formed in the far field. It can be seen that when D4 / L=2.5, the length T of the light guide rod 112 only needs to be 6.6nD (6.6nD=1.0mm in this embodiment) to greatly compress the aspect ratio of the far-field light spot; and the perfect circular light spot can be achieved only when the length T of the light guide rod 112 is 13nD (13nD=2mm in this embodiment).

[0035] For the light guide rod 112 with a cross-sectional diameter of D5=0.12mm, the cross-sectional diameter D5 of the light guide rod 112 is 3 times the length of the long side L of the light-emitting area of ​​the edge-emitting semiconductor laser chip 113. At this time, when the length T of the light guide rod 112 is 8nD, W=2, and it can be seen that the luminous angle has been greatly improved compared with the initial long strip light spot of W=16 / 3. When the length T of the light guide rod 112 is 16.5nD, W=1, and a perfect circular symmetrical angular distribution can be formed, that is, a circular light spot is formed in the far field. It can be seen that when D5 / L=3, the length T of the light guide rod 112 only needs to be 8nD (8nD=1.5mm in this embodiment) to greatly compress the aspect ratio of the far-field light spot; and the perfect circular light spot can be achieved only when the length T of the light guide rod 112 is 16.5nD (16.5nD=3mm in this embodiment).

[0036] For the light guide rod 112 with a cross-sectional diameter of D6=0.14mm, the cross-sectional diameter D6 of the light guide rod 112 is 3.5 times the length of the long side L of the light-emitting area of ​​the edge-emitting semiconductor laser chip 113. At this time, when the length T of the light guide rod 112 is 10nD, W=2, and it can be seen that the luminous angle has been greatly improved compared with the initial long strip light spot of W=16 / 3. When the length T of the light guide rod 112 is 18.8nD, W=1, and a perfect circular symmetrical angular distribution can be formed, that is, a circular light spot is formed in the far field. It can be seen that when D6 / L=3.5, the length T of the light guide rod 112 only needs to be 10nD (10nD=2.1mm in this embodiment) to greatly compress the aspect ratio of the far-field light spot; and the perfect circular light spot can be achieved only when the length T of the light guide rod 112 is 18.8nD (18.8nD=4mm in this embodiment).

[0037] For the light guide rod 112 with a cross-sectional diameter of D7=0.16mm, the cross-sectional diameter D7 of the light guide rod 112 is 4 times the length of the long side L of the light-emitting area of ​​the edge-emitting semiconductor laser chip 113. At this time, when the length T of the light guide rod 112 is 12.3nD, W=2, and it can be seen that the luminous angle has been greatly improved compared with the initial long strip light spot of W=16 / 3. When the length T of the light guide rod 112 is 22nD, W=1, and a perfect circular symmetrical angular distribution can be formed, that is, a circular light spot is formed in the far field. It can be seen that when D7 / L=4, the length T of the light guide rod 112 only needs to be 12.3nD (12.3nD=3mm in this embodiment) to greatly compress the aspect ratio of the far-field light spot; and the perfect circular light spot can be achieved only when the length T of the light guide rod 112 is 22nD (22nD=5.4mm in this embodiment).

[0038] For the light guide rod 112 with a cross-sectional diameter of D8=0.18mm, the cross-sectional diameter D8 of the light guide rod 112 is 4.5 times the length of the long side L of the light-emitting area of ​​the edge-emitting semiconductor laser chip 113. At this time, when the length T of the light guide rod 112 is 14.5nD, W=2, and it can be seen that the luminous angle has been greatly improved compared with the initial long strip light spot of W=16 / 3. When the length T of the light guide rod 112 is 25nD, W=1, and a perfect circular symmetrical angular distribution can be formed, that is, a circular light spot is formed in the far field. It can be seen that when D8 / L=4.5, the length T of the light guide rod 112 only needs to be 14.5nD (14.5nD=4mm in this embodiment) to greatly compress the aspect ratio of the far-field light spot; and the perfect circular light spot can be achieved only when the length T of the light guide rod 112 is 25nD (25nD=6.8mm in this embodiment).

[0039] For the light guide rod 112 with a cross-sectional diameter D9=0.2mm, the cross-sectional diameter D9 of the light guide rod 112 is 5 times the length of the long side L of the light-emitting area of ​​the edge-emitting semiconductor laser chip 113. At this time, when the length T of the light guide rod 112 is 13.4nD, W=2, and it can be seen that the luminous angle has been greatly improved compared with the initial long strip light spot of W=16 / 3. When the length T of the light guide rod 112 is 28nD, W=1, and a perfect circular symmetrical angular distribution can be formed, that is, a circular light spot is formed in the far field. It can be seen that when D9 / L=5, the length T of the light guide rod 112 only needs to be 13.4nD (13.4nD=4.1mm in this embodiment) to greatly compress the aspect ratio of the far-field light spot; and the perfect circular light spot can be achieved only when the length T of the light guide rod 112 is 28nD (28nD=8.5mm in this embodiment).

[0040] Through the above experimental analysis, we can know that:

[0041] (1) The light guide rod 112 twists the luminous angles of the fast axis and the slow axis of the luminous area. When the luminous full angle ratio (W) of the outgoing laser beam 122 in the fast axis direction and the slow axis direction is between 1 and 2, the light spot formed in the far field is circular or approximately circular. This light spot is an ideal light spot in the field of laser lighting technology.

[0042] (2) When W is within the value range of 1-2, the larger the ratio of the cross-sectional diameter D of the light guide rod 112 to the length L of the light-emitting area, the longer the length of the light guide rod 112. Since the length L of the light-emitting area remains unchanged in this experiment, the cross-sectional diameter D of the light guide rod 112 is proportional to the length of the light guide rod 112. If you want to shorten the length of the light guide rod 112, you need to reduce the length of the cross-sectional diameter D of the light guide rod 112.

[0043] (3) In the initial stage, the length of the light guide rod 112 increases, and the value of W gradually decreases. When W=1, the length of the light guide rod 112 continues to increase, and the value of W fluctuates only slightly. It can be understood that when W=1, enough lasers in the fast axis direction are twisted to the slow axis direction so that the light emission angles in the two directions are the same, and the mutual conversion between the fast axis light and the slow axis light reaches a balance. At this time, the far-field spot of the laser beam 122 emitted from the end face of the light guide rod 112 is circular.

[0044] From the above experiment, it can be seen that when the value of W changes from 1 to 2, the length T of the corresponding light guide rod 112 is the length we need. When the diameter D of the light guide rod 112 is ≤ 5L and T ≥ 3nD, the aspect ratio of the far-field light spot can be greatly compressed. Of course, the diameter D of the light guide rod 112 obviously needs to be greater than the length L of the light-emitting area, so that all the light emitted by the light-emitting area can be incident on the light guide rod 112.

[0045] The distance between the light guide rod 112 and the light emitting area is S. Since the light emitting angle of the long axis direction of the laser 121 is constant, when the distance S is greater than a certain value, the laser 121 emitted by the light emitting area cannot be completely received by the light guide rod 112, resulting in energy waste. Figure 3 As shown, only when S < (D / 2) / tan (A) can it be guaranteed that the laser 121 fills the end face of the light guide rod 112 in at least one direction. Since the width of the light-emitting area is small, the width of the light-emitting area can be ignored when calculating S. It can be seen from actual use that the end face of the light guide rod 112 will also reflect a portion of the laser 121. When the distance S = 0 or S is close to 0, the laser 121 reflected by the light guide rod 112 is completely returned to the edge-emitting semiconductor laser chip 113, affecting the laser resonant cavity and the service life of the edge-emitting semiconductor laser chip 113.

[0046] If the light guide rod 112 is used to receive the laser light emitted by the edge-emitting semiconductor laser chip 113, considering that the laser light emitting area is very small and the power density is very high (40,000 watts / mm 2 ), the diameter of the selected light guide rod 112 will be much larger than the size of the laser light emitting area, because in this way the light guide rod 112 will not be difficult to process due to being too thin, and at the same time, the difficulty in assembling and aligning the light guide rod 112 and the laser light emitting area will be relatively low. Generally speaking, D>10L is selected, that is, the cross-sectional diameter of the light guide rod 112 is more than 10 times the length of the light emitting area. Before the present invention was proposed, no one discovered that when the diameter of the light guide rod 112 is small enough, the incident laser with a large fast-axis slow-axis angle ratio can be twisted into a laser beam 122 close to an outgoing circular spot, and the length of the light guide rod 112 is very small, which is very conducive to integrated packaging.

[0047] When the cross-sectional diameter D of the light guide rod 112 is relatively small, the angle can be twisted quickly (the required length is relatively short). From the above experiment, it can be seen that when the diameter D2 of the light guide rod 112 is 0.08, the length of the light guide rod 112 is 2 mm. According to the principle obtained in (2), when the diameter D≤0.08 of the light guide rod 112, that is, D / L≤2, the length T of the light guide rod 112 is less than 2 mm. On the other hand, the light guide rod 112 has a homogenizing effect, and it is also meaningful to examine the surface distribution of the light outlet of the light guide rod 112. From the perspective of surface distribution, when the diameter D=0.08mm of the light guide rod 112, even if the length of the light guide rod 112 is 2mm, it cannot fill the outer circle of the end face of the light outlet of the light guide rod 112 well. The diameter D=0.08mm of the light guide rod 112 can better fill the light outlet section of the light guide rod 112, so D≤2L.

[0048] In summary, in this embodiment, the cross-sectional diameter D of the light guide rod 112 is preferably: L<D≤2L.

[0049] The side of the light guide rod 112 opposite to the light emitting area is coated with an anti-reflection film, and the material of the anti-reflection film can be magnesium fluoride, titanium oxide, lead sulfide, lead selenide, ceramic infrared light infrared anti-reflection film, vinyl silsesquioxane hybrid film, etc. The anti-reflection film uses the interference principle to interfere the light on the front and rear surfaces of the anti-reflection film to reduce the intensity of the reflected light (reduce damage to the edge-emitting semiconductor laser chip 113) and increase the intensity of the transmitted light (improve the utilization rate of the laser).

[0050] The laser device further includes a base plate 111 , wherein a light guide rod 112 and an edge-emitting semiconductor laser chip 113 are fixed on the base plate 111 .

[0051] Embodiment 2: As attached Figure 4 As shown, the difference between this embodiment and Example 1 is that:

[0052] 1. This embodiment further includes a packaging shell 214 , which is fixedly disposed on the bottom plate 211 . The packaging shell 214 and the bottom plate 211 package the light guide rod 212 and the edge-emitting semiconductor laser chip 213 inside.

[0053] 2. The bottom plate 211 is fixed with a support column 216, which is fixed to the bottom plate 211 by bonding or welding. The edge-emitting semiconductor laser chip 213 is fixed to the support column 216, which is usually fixed to the support column 216 by bonding.

[0054] 3. In this embodiment, a light-transmitting window 215 is provided on the surface of the package shell 214 opposite to the bottom plate 211, and a surface of the edge-emitting semiconductor laser chip 213 having a light-emitting area is provided opposite to the light-transmitting window 215. In this embodiment, transparent glass is provided on the light-transmitting window 215.

[0055] 4. The light guide rod 212 is disposed between the light-transmitting window 215 and the light-emitting area. The light guide rod 212 is fixedly disposed on the inner wall of the packaging shell 214 by bonding or by connecting with a fixing ring.

[0056] The edge emitting semiconductor laser chip 213 emits laser light 221, and the laser light 221 enters the light guide rod 212 and emits a parallel laser beam 222, which passes through the transparent glass provided on the light-transmitting window 215 and is emitted to the outside of the packaging shell 214. The support column 216 is used to fix the edge emitting semiconductor laser chip 213 and also to conduct the heat generated by the edge emitting semiconductor laser chip 213 during use to prevent the edge emitting semiconductor laser chip 213 from being damaged by excessive temperature.

[0057] The light guide rod 212 needs to be packaged inside the packaging shell 214, so the length T and diameter D of the light guide rod 212 need to be suitable for packaging. In applications, in order to miniaturize the integrated package, the length T of the light guide rod 212 is preferably less than 10 mm.

[0058] Embodiment 3: As attached Figure 5-8 As shown, the difference between this embodiment and embodiment 2 is that:

[0059] 1. This embodiment also includes a light guide rod base 319, on which a groove 310 is provided. The groove 310 is provided along the length direction of the light guide rod base 319, and the groove 310 extends from one end face of the light guide rod base 319 to the other end face of the light guide rod base 319. The cross section of the groove 310 in the light guide rod base 319 is V-shaped. The light guide rod 312 is provided in the groove 310, and the light guide rod 312 is fixed in the groove 310 by bonding. This embodiment uses the groove 310 to position the light guide rod 312. The light guide rod 312 is placed in the groove 310, with one end of the groove 310 as the positioning end. The light guide rod base 319 is simple and quick to fix the light guide rod 312, without the need for debugging and calibration, thereby improving production efficiency and installation accuracy.

[0060] 2. The light guide rod base 319 further includes a positioning bar 331, which includes a first positioning surface 331a and a second positioning surface 331b. One side of the edge-emitting semiconductor laser chip 313 is welded to the first positioning surface 331a. Welding the edge-emitting semiconductor laser chip 313 to the first positioning surface 331a limits the edge-emitting semiconductor laser chip 313 in the Figure 6Degrees of freedom in the upper and lower directions.

[0061] A support base 332 is welded to the bottom of the edge-emitting semiconductor laser chip 313. The support base 332 is L-shaped. One side of the support base 332 is in close contact with the first positioning surface 331a, and the other side of the support base 332 is in close contact with the second positioning surface 331b. The support base 332 is in close contact with the second positioning surface 331b, which limits the edge-emitting semiconductor laser chip 313. Figure 6 The degrees of freedom in the left and right directions.

[0062] Since the diameter of the light guide rod 312 and the size of the light emitting area are particularly small, the edge-emitting semiconductor laser chip 313 and the light guide rod 312 are required to have high matching accuracy during the fixing process. It is difficult to guide the laser 321 emitted by the edge-emitting semiconductor laser chip 313 into the light guide rod 312. The purpose of adding the light guide rod base 319 in this embodiment is to reduce the difficulty of matching the edge-emitting semiconductor laser chip 313 with the light guide rod 312 and simplify the installation and fixing steps. Secondly, repeated debugging during the installation process is avoided, thereby improving the installation efficiency.

[0063] 3. This embodiment includes a bottom plate 311 and a packaging shell 314, the light guide rod 312 and the edge-emitting semiconductor laser chip 313 are relatively fixed to the bottom plate, and the packaging shell 314 and the bottom plate 311 encapsulate the light guide rod 312 and the edge-emitting semiconductor laser chip 313 inside, wherein the length of the light guide rod 312 is less than or equal to 10 mm; the packaging shell 314 includes a light-transmitting window 315, and the light-transmitting window 315 is used to guide the laser 322a to the outside of the packaging shell 314. The advantage of the length of the light guide rod 312 being less than 10 mm is that the entire structure is more compact, forming an integrated packaging structure, and as mentioned above, the limitation on the end face diameter D of the light guide rod 312 in the present invention allows the light guide rod 312 to be very short. Preferably, the length of the light guide rod 312 is less than 2 mm.

[0064] 4. In this embodiment, the laser optical axis emitted by the edge-emitting semiconductor laser chip 313 is parallel to the plane of the bottom plate 311. This has the advantage that its heat dissipation surface can be installed close to the bottom plate 311, and the heat can be directly transferred to the bottom plate 311. Figure 4 Compared with the embodiment shown in the figure, heat conduction through the support column is not required, and the heat dissipation effect of this embodiment is better.

[0065] 5. In this embodiment, the package shell 314 includes a surface parallel to the bottom plate 311, and the light-transmitting window 315 is located on the surface. It also includes a reflector 318 located inside the package shell 314 and at the rear end of the optical path of the light guide rod 312. The reflector 318 is used to collect the laser 322a emitted by the light guide rod 312 and reflect the laser so that it is emitted from the light-transmitting window 315 to the outside of the package shell 314 to form 322b. The advantage of this is that the light-emitting surface is upward and parallel to the fixing surface, which is the same as the general usage habits and is easier to use.

[0066] 6. A lens 317 is disposed on the light-transmitting window 315 , and the second laser 322 b passes through the lens 317 . The second laser 322 b is focused by the lens 317 to form a third laser 323 that is emitted to the outside of the packaging shell 314 .

[0067] 7. In this embodiment, the light guide rod 312 is the core 312a of the optical fiber, and the core 312a of the optical fiber is wrapped with a cladding 312b. When fixing the light guide rod 312, glue or a fixing ring is usually used. The glue or the fixing ring fixes the light guide rod 312. If there is no cladding, the glue will match the refractive index of the light guide rod, thereby causing light leakage from the light guide rod 312. In order to avoid light leakage from the fixed light guide rod 312, a cladding 312b is wrapped around the core 312a. The refractive index of the cladding 312b is lower than the refractive index of the core 312a. Due to the high laser energy, organic matter is easily burned by the laser, and organic matter is usually not selected for the cladding 312b.

[0068] In this embodiment, the light guide rod 312 and its cladding are preferably photonic crystal glass optical fibers with large Na of photonic crystal, or multi-component glass optical fibers. Photonic crystal optical fibers use photonic crystal structures to achieve large Na, and the core material of the multi-component glass optical fiber includes appropriately mixing oxides such as sodium oxide (Na2O), boron oxide (B2O2), potassium oxide (K2O2) and the like in SiO2 raw materials. It is characterized by a lower softening point than quartz and a large difference in refractive index between the core and the cladding, so that Na is large and can accept laser incidence at a larger angle.

[0069] Embodiment 4: As attached Fig. 9 As shown, the difference between this embodiment and embodiment 3 is that:

[0070] The light guide rod base 419 and the positioning edge 431 connected to the light guide rod base 419, the edge-emitting semiconductor laser chip 413 positioned by the positioning edge 431, the light guide rod 412 arranged on the light guide rod base 419, and the reflector 418 arranged on the light path of the light guide rod 412 constitute the laser module 430. The laser module 430 is arranged on the base plate 411 in the form of an array, and the packaging shell 414 and the base plate 411 encapsulate the three laser modules 430 inside. In this embodiment, an implementation method of three laser modules 430 is given. The laser modules 430 are not limited to three, and the number of laser modules 430 can be increased or decreased as needed.

[0071] Embodiment 5: As attached Fig.10 As shown, the difference between this embodiment and Example 1 is that:

[0072] A wavelength conversion device is provided on the path of the laser beam 522 emitted by the light guide rod 512 , and the wavelength conversion device is a fluorescent sheet 532 . The laser beam 522 irradiates the fluorescent sheet 532 , and excites the fluorescent sheet 532 to emit fluorescence 523 .

[0073] The specific embodiments of the present invention are described in detail above, and the contents are the best embodiments of the present invention and cannot be used to limit the protection scope of the present invention. For those skilled in the art, any equivalent modifications and substitutions made to the invention are also within the scope of the present invention.

Claims

1. A laser device, comprising an edge-emitting semiconductor laser chip, wherein the edge-emitting semiconductor laser chip comprises a long strip-shaped light-emitting region, wherein the direction of the light-emitting region parallel to the junction plane is a slow axis, and the direction perpendicular to the junction plane is a fast axis, wherein the light-emitting angle of the fast axis is greater than that of the slow axis, and the light-emitting half angle of the fast axis is A, wherein: It further includes a light guide rod, which is arranged on one side of the light-emitting region of the edge-emitting semiconductor laser chip. One end face of the light guide rod faces the light-emitting region, and this end face is used to receive the laser emitted by the light-emitting region. The numerical aperture Na of the light guide rod satisfies the condition Na > sin(A), and the laser enters the light guide rod and is reflected and propagated inside it; The length of the light-emitting region is L, the light guide rod is circular with an end face diameter of D or elliptical with a major axis length of D, and the length of the light guide rod is T. Among them, L < D ≤ 5L, T ≥ 3nD, where n is the refractive index of the light guide rod.

2. The laser device according to claim 1, characterized in that: The length of the light guide rod satisfies D ≤ 2L.

3. The laser device according to claim 1, characterized in that: The distance between the end face of the light guide rod facing the light-emitting region and the light-emitting region is S, and S < (D / 2) / tan(A).

4. The laser device according to claim 1, characterized in that: The light guide rod is the core of an optical fiber, and the core is wrapped with a cladding.

5. The laser device according to claim 1, characterized in that: It further includes a bottom plate and a packaging housing. The light guide rod and the edge-emitting semiconductor laser chip are relatively fixed to the bottom plate, and the packaging housing and the bottom plate encapsulate the light guide rod and the edge-emitting semiconductor laser chip inside. Among them, the length of the light guide rod is less than or equal to 10 mm; the packaging housing includes a light-transmitting window, and the light-transmitting window is used to guide the laser to the outside of the packaging housing.

6. The laser device according to claim 5, characterized in that: The optical axis of the laser emitted by the edge-emitting semiconductor laser chip is parallel to the plane of the bottom plate.

7. The laser device according to claim 6, characterized in that: The packaging housing includes a surface parallel to the bottom plate, and the light-transmitting window is located on this surface; it also includes a mirror located inside the packaging housing and at the rear end of the light path of the light guide rod. The mirror is used to collect the laser emitted by the light guide rod and reflect the laser so that it exits from the light-transmitting window to the outside of the packaging housing.

8. The laser device according to claim 5, characterized in that: It further includes a light guide rod base, and the light guide rod base includes a groove, and the light guide rod is fixed in the groove.

9. The laser device according to claim 8, characterized in that: The light guide rod base includes a positioning edge or a positioning surface, and the positioning edge or the positioning surface is used to position the relative position between the edge-emitting semiconductor laser chip and the light guide rod base.

10. A light source, characterized in that: It includes the laser device according to any one of claims 1 to 9, and further includes a wavelength conversion device. The laser emitted by the laser device is incident on the wavelength conversion device and excites the wavelength conversion device to emit stimulated light.

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