Photoelectric device and preparation method thereof

Abstract

The present invention discloses a photoelectric device and a method for preparing the same. The photoelectric device includes an anode layer, a cathode layer, and a functional layer. The functional layer is disposed between the anode layer and the cathode layer. The functional layer includes a hole transport layer, an interface layer, and a perovskite layer. The interface layer is disposed between the hole transport layer and the perovskite layer. The interface layer is made of a zwitterionic polymer having positively charged groups and negatively charged groups. By adding the interface layer between the hole transport layer and the perovskite layer, interface defects are filled, fluorescence quenching in the hole transport layer is alleviated, and the fluorescence quantum efficiency of the perovskite layer is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of photoelectric devices, in particular to a photoelectric device suitable for a perovskite layer and a preparation method thereof. Background Art

[0002] In recent years, organic-inorganic hybrid perovskites have shown great potential for application in the optoelectronics field due to their advantages, including simple preparation processes, easily tunable emission colors, high color purity, and high photoelectric efficiency. However, the low exciton binding energy of perovskites leads to thermal dissociation of excitons at room temperature, resulting in low radiative recombination in perovskite films. The generated free carriers are trapped in defect states, leading to non-radiative recombination. Although current methods such as reducing the perovskite grain size, using quasi-two-dimensional perovskite structures, or defect passivation can improve the fluorescence quantum efficiency (PLQY) of perovskites, resulting in efficient green perovskite light-emitting diodes (PeLEDs), efficient green PeLEDs all use PEDOT:PSS as a hole transport layer. PEDOT:PSS not only suffers from fluorescence quenching itself, but also has interface defects between the hole transport layer and the perovskite layer, which limit the PLQY of the perovskite film and thus the low efficiency of perovskite optoelectronic devices. Summary of the Invention

[0003] One object of the present invention is to provide a photoelectric device and a method for preparing the same, which fills the interface defects by adding an interface layer between the hole transport layer and the perovskite layer, alleviates the fluorescence quenching phenomenon of the hole transport layer, and improves the fluorescence quantum efficiency of the perovskite layer.

[0004] To achieve the above objectives, the present invention provides a photoelectric device, comprising an anode layer, a cathode layer and a functional layer, wherein the functional layer is arranged between the anode layer and the cathode layer, the functional layer comprises a hole transport layer, an interface layer and a perovskite layer, the interface layer is arranged between the hole transport layer and the perovskite layer, the material of the interface layer is a zwitterionic polymer, and the zwitterionic polymer has positively charged groups and negatively charged groups.

[0005] As a preference, the positively charged group is a cationic group containing N, C, S or P.

[0006] As a preference, the negatively charged group is phosphate, phosphate ester, phosphite, carboxylate, sulfonate, sulfate or sulfonamide.

[0007] Further preferably, the chemical structure of the zwitterionic polymer is as shown in any one of formulas (1) to (3):

[0008]

[0009] Where, x = 0 to 10, n = 10 to 1000, R ⊕ is a positively charged group in zwitterionic polymers, It is a negatively charged group in zwitterionic polymers.

[0010] As a preferred embodiment, the thickness of the interface layer is 1 to 10 nm.

[0011] As a preference, the hole transport layer is a PEDOT:PSS layer.

[0012] As a preferred embodiment, the material structure of the perovskite layer is ABX3, wherein A is a metal cation or an alkylammonium salt, and A is Cs + , K + , Rb + , R 1 NH3 + or NH2R 2 NH2 + , R 1 CnH2n+1, n≥1, R 2 is CnHn, n≥1; X is a halogen anion, X is selected from Cl - Br - or I - At least one of; B is a divalent metal ion, B is selected from Cu 2+ 、Ni 2+ 、Co 2+ 、Fe 2+ 、Mn 2 + Cr 2+ 、Pd 2+ 、Cd 2+ 、Ge 2+ 、Sn 2+ , Pb 2+ 、Eu 2+ 、Bi 2+ 、Sb 2+ 、Yb 2+ At least one of .

[0013] Preferably, the functional layer further includes an electron transport layer and an electron injection layer, the electron transport layer is arranged between the perovskite layer and the electron injection layer, the electron injection layer is arranged between the electron transport layer and the cathode layer, the electron injection layer has a film thickness of 1 to 10 nm, and the photoelectric device is an electroluminescent device.

[0014] As another preferred embodiment, the functional layer further includes an electron transport layer, the electron transport layer is provided between the perovskite layer and the cathode layer, and the photoelectric device is a solar cell.

[0015] According to another aspect of the present application, a method for preparing a photoelectric device is provided, comprising the steps of:

[0016] S1 provides a substrate having a first electrode layer, where the first electrode layer is the anode layer or the cathode layer;

[0017] S2: sequentially arranging the material of the hole transport layer, the material of the interface layer, and the material of the perovskite layer on the first electrode layer from bottom to top;

[0018] S3: disposing a material of a second electrode layer on the perovskite layer.

[0019] As a preferred embodiment, the first electrode layer is an anode layer, and the step S2 further comprises the steps of:

[0020] S21: placing a PEDOT:PSS solution on the surface of the anode layer to form the hole transport layer;

[0021] S22: placing a zwitterionic polymer solution on the surface of the hole transport layer to form the interface layer;

[0022] S23: placing a perovskite solution on the surface of the interface layer to form the perovskite layer.

[0023] As a preferred embodiment, the step S2 includes the steps of:

[0024] S210: placing a PEDOT:PSS solution on an ITO substrate and annealing the solution at 130-170° C. for 20-40 minutes to form the hole transport layer;

[0025] S220 dissolving the zwitterionic polymer in trifluoroethanol to prepare a standby solution, placing the standby solution on the surface of the hole transport layer, and annealing at 80-120° C. for 2-10 minutes to form the interface layer;

[0026] S230: placing a perovskite solution on the surface of the interface layer under a nitrogen environment, and annealing at 60-100° C. for 5-15 minutes to form the perovskite layer.

[0027] Preferably, in step S22, the zwitterionic polymer is dissolved in trifluoroethanol to prepare a solution with a mass concentration of 0.1 to 0.4 mg / mL.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] (1) A zwitterionic polymer is used as an interface layer between the hole transport layer and the perovskite layer, and its monomer contains positively charged groups and negatively charged groups, which effectively fills the interface defects of organic cations and halogen anions between the hole transport layer and the perovskite layer, alleviates the fluorescence quenching phenomenon of the hole transport layer, and improves the fluorescence quantum efficiency of the perovskite film;

[0030] (2) The pH of the zwitterionic polymer in the interface layer is neutral, and it can be prepared by a low-temperature solution method. The preparation method is simple and the annealing temperature is low, generally not exceeding 120°C, thereby increasing the scope of application of the interface layer and can be used in the preparation of large-area, flexible perovskite light-emitting devices or perovskite solar cells.

[0031] (3) The surface hydrophilicity of the zwitterionic polymer in the interface layer is compatible with the perovskite precursor solution, which effectively improves the film-forming property of the perovskite and helps to prepare a uniform and dense perovskite film;

[0032] (4) Compared with polyelectrolytes, the interface layer is made of a charge-neutral zwitterionic polymer, which is more stable under an electric field and will not cause attenuation of the perovskite device due to ion migration. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 is a schematic structural diagram of a photoelectric device according to an embodiment of the present invention;

[0034] Figure 2 is a schematic structural diagram of a photoelectric device according to a preferred embodiment of the present invention;

[0035] Figure 3 is a schematic structural diagram of a photoelectric device according to another preferred embodiment of the present invention;

[0036] Figure 4 1 is a fluorescence spectrum diagram and PLQY data diagram of the perovskite film according to Examples 1 to 5 of the present invention;

[0037] Figure 5 is a voltage-current density relationship curve of the photovoltaic device according to Examples 1 to 3 of the present invention;

[0038] Figure 6 is a current density-external quantum efficiency relationship curve of the optoelectronic devices according to Examples 1 to 3 of the present invention;

[0039] Figure 7 is the electroluminescence spectrum of the optoelectronic device according to Examples 1 to 3 of the present invention;

[0040] Figure 8is a graph showing the relationship between voltage and current density of a photovoltaic device based on zwitterionic polymers at different concentrations according to the preferred embodiment of the present invention;

[0041] Figure 9 1 is a graph showing the relationship between current density and external quantum efficiency of optoelectronic devices based on zwitterionic polymers with different concentrations according to the preferred embodiment of the present invention.

[0042] In the figure: 1. anode layer; 2. hole transport layer; 3. interface layer; 4. perovskite layer; 5. electron transport layer; 6. electron injection layer; 7. cathode layer. DETAILED DESCRIPTION

[0043] The present invention will be further described below in conjunction with specific implementation methods. It should be noted that, under the premise of no conflict, the various embodiments or technical features described below can be arbitrarily combined to form new embodiments.

[0044] In the description of the present invention, it should be noted that the terms "including" and "having" and any variations thereof in the specification and claims of this application are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units that are not explicitly listed or are inherent to these processes, methods, products or apparatus.

[0045] like Figure 1 Shown is a photoelectric device, including an anode layer 1, a cathode layer 7 and a functional layer. The functional layer is arranged between the anode layer 1 and the cathode layer 7. The functional layer includes a hole transport layer 2, an interface layer 3 and a perovskite layer 4. The interface layer 3 is arranged between the hole transport layer 2 and the perovskite layer 4. The material of the interface layer 3 is a zwitterionic polymer, and the zwitterionic polymer has positively charged groups and negatively charged groups.

[0046] In some embodiments, the positively charged groups in the interface layer 3 are cationic groups containing N, C, S or P. Among them, N atoms, C atoms, S atoms and P atoms are positively charged, thereby forming cationic groups. Cationic groups containing N are quaternary amines, pyridine quaternary amines or pyrrole quaternary amines, etc., which carry positive charges. The negatively charged groups in the interface layer 3 are phosphates, phosphate esters, phosphites, carboxylates, sulfonates, sulfates or sulfonamides, etc., which carry negative charges. Thus, the N contained in the monomers of the zwitterionic polymer is + and O - It helps to fill the defects of organic cations and halogen anions respectively, improve the fluorescence quantum efficiency of perovskite films, and then improve the external quantum efficiency (EQE) of perovskite light-emitting devices (PeLEDs).

[0047] In some embodiments, the chemical structure of the zwitterionic polymer is as shown in any one of formulas (1) to (3):

[0048]

[0049] In some embodiments, x=0-10, n=10-1000, R ⊕ is a positively charged group in zwitterionic polymers, It is a negatively charged group in zwitterionic polymers.

[0050] In some embodiments, the anode layer 1 is a transparent conductive substrate, i.e., indium tin oxide (ITO) conductive glass. The ITO film has a sheet resistance of 15Ω / □ and a thickness of 20-200nm. The hole transport layer 2, interface layer 3, perovskite layer 4, and cathode layer 7 are sequentially arranged from the anode layer 1 upward.

[0051] In some embodiments, the thickness of the interface layer may be 1-10 nm.

[0052] In some embodiments, the hole transport layer 2 is a poly (3,4-ethylenedioxythiophene) / poly (styrene sulfonate) (PEDOT:PSS) layer.

[0053] In some embodiments, the hole transport layer 2 has a thickness of 20-80 nm.

[0054] In some embodiments, the perovskite layer 4 is a light-emitting layer, and the material structure of the perovskite layer 4 is generally represented by ABX3, wherein A is a metal cation or an alkylammonium salt, and A is Cs + , K + , Rb + , R 1 NH3 + or NH2R 2 NH2 + , R 1 CnH2n+1, n≥1, R 2 is CnHn, n≥1; X is a halogen anion, X is selected from Cl - Br - or I - At least one of; B is a divalent metal ion, B is selected from Cu 2+ 、Ni 2+ 、Co 2+ 、Fe 2+ 、Mn 2+ Cr 2+ 、Pd 2+ 、Cd 2+ 、Ge 2+ 、Sn 2+ , Pb 2+ 、Eu 2+ 、Bi2+ 、Sb 2+ 、Yb 2+ At least one of the following. The precursor solution of the perovskite layer 4 is prepared by dissolving AX and BX2 in a solvent (N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), γ-butyrolactone (GBL), or a mixed solvent prepared in a certain proportion) at a certain concentration.

[0055] In some embodiments, the materials of the electron transport layer 5 are not limited to 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,3,5-tris[(3-pyridyl)-3-phenyl]benzene (TmPyPb), 4,6-bis(3,5-di(3-pyridyl)phenyl)benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,3,5-tris[(3-pyridyl)-3-phenyl]benzene (TPBi ... )-2-methylpyrimidine (B3PyMPM), 2,4,6; tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane (3TPYMB), 1,3-bis(3,5-dipyridin-3-ylphenyl)benzene (BmPyPhB), 8-hydroxyquinoline aluminum (AlQ3), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), the film thickness can be 10-100nm.

[0056] In some embodiments, the functional layer may further include an electron transport layer 5 and an electron injection layer 6. The electron transport layer 5 is disposed between the perovskite layer 4 and the electron injection layer 6. The electron injection layer 6 is disposed between the electron transport layer 5 and the cathode layer 7. The thickness of the electron injection layer is 1 to 10 nm. The optoelectronic device is an electroluminescent device, such as Figure 2 shown.

[0057] In some embodiments, the electron injection layer 6 is lithium fluoride (LiF).

[0058] In some embodiments, the electron injection layer 6 may have a thickness of 1 to 10 nm.

[0059] In some embodiments, the thickness of the perovskite layer 4 may be 10-200 nm.

[0060] In some embodiments, the cathode layer 7 is made of aluminum (Al) or silver (Ag), and its thickness can be 100-150 nm.

[0061] In some embodiments, the material of the anode layer 1 may be indium tin oxide (ITO); the thickness of the anode layer 1 may be 20-200 nm.

[0062] In some embodiments, the thickness of the anode layer 1 is 100-200 nm, the thickness of the hole transport layer 2 is 20-50 nm, the thickness of the interface layer 3 is 2-5 nm, the thickness of the perovskite layer 4 is 50-100 nm, the thickness of the electron transport layer 5 is 20-60 nm, and the thickness of the electron injection layer 6 is 5-10 nm.

[0063] Figure 3 Shown is another optoelectronic device suitable for perovskite solar cells, including an anode layer 1, a cathode layer 7 and a functional layer. The functional layer is arranged between the anode layer 1 and the cathode layer 7. The functional layer includes a hole transport layer 2, an interface layer 3, a perovskite layer 4 and an electron transport layer 5. The interface layer 3 is arranged between the hole transport layer 2 and the perovskite layer 4. The interface layer 3 has positive charge groups and negative charge groups.

[0064] Therefore, the interface layer 3 is suitable for applications containing the perovskite layer 4, such as light-emitting diodes, solar cells, sensors, probes and other fields.

[0065] According to another aspect of the present application, a method for preparing any of the above-mentioned photoelectric devices is provided, comprising the steps of: S1 providing a substrate having a first electrode layer, the first electrode layer being an anode layer 1 or a cathode layer 7; S2 arranging the material of the hole transport layer 2, the material of the interface layer 3 and the material of the perovskite layer 4 in sequence from bottom to top on the first electrode layer; S3 arranging the material of the second electrode layer on the perovskite layer 4.

[0066] In some embodiments, the first electrode layer is an anode layer 1, and step S2 further includes the following steps: S21, disposing a PEDOT:PSS solution on the surface of anode layer 1 to form a hole transport layer 2; S22, disposing a zwitterionic polymer solution on the surface of hole transport layer 2 to form an interface layer 3; S23, disposing a perovskite solution on the surface of interface layer 3 to form a perovskite layer 4. It should be noted that the layer formation process in each step requires drying to remove the solvent. Drying methods include, but are not limited to, thermal baking and vacuum drying. Methods for disposing each layer include, but are not limited to, spin coating, doctor blade coating, coating, inkjet printing, and screen printing.

[0067] In some embodiments, step S2 specifically includes the following steps: S210: placing a PEDOT:PSS solution on an ITO substrate and annealing at 130-170° C. for 20-40 minutes to form a hole transport layer 2; S220: dissolving a zwitterionic polymer in trifluoroethanol to prepare a standby solution, placing the standby solution on the surface of the hole transport layer 2, and annealing at 80-120° C. for 2-10 minutes to form an interface layer 3; S230: placing a perovskite solution on the surface of the interface layer 3 under a nitrogen environment and annealing at 60-100° C. for 5-15 minutes to form a perovskite layer 4. The perovskite solution in step S230 can be placed by a one-step spin coating method, an anti-solvent method, or a two-step spin coating method.

[0068] In some embodiments, the method for preparing an optoelectronic device further includes step S2 ′ before step S3 : preparing an electron transport layer 5 on the perovskite layer 4 by vacuum evaporation; and preparing an electron injection layer 6 on the electron transport layer 5 by vacuum evaporation.

[0069] Example 1

[0070] A method for preparing a photoelectric device, suitable for light-emitting diodes, comprises the following steps:

[0071] (a) The transparent conductive substrate ITO glass was ultrasonically cleaned twice using acetone and ethanol solutions, respectively. After treatment, it was dried with nitrogen gas. The ITO was transferred to an oxygen plasma cleaner and cleaned with oxygen plasma under vacuum conditions.

[0072] (b) The PEDOT:PSS layer of the hole transport layer 2 was prepared by spin coating and thermally annealed at 150°C.

[0073] (c) A zwitterionic polymer P1 was dissolved in trifluoroethanol (TFE) at a mass concentration of 0.2 mg / mL to prepare a solution. The sulfonated zwitterionic polymer P1 solution was then spin-coated onto the hole transport layer 2 and annealed at 100° C. for 5 min to form an interface layer 3. The chemical structure of the zwitterionic polymer P1 is:

[0074] (d) NH2CH=NH2Br (FABr) and PbBr2 were dissolved in DMF at a molar ratio of 2:1 and a mass fraction of 21% to prepare a precursor solution (FAPbBr3). A perovskite film was prepared on the surface of the interface layer 3 by a one-step spin coating method, an anti-solvent method, or a two-step spin coating method. The film was annealed at 70°C for 10 min to form a perovskite layer 4, i.e., the light-emitting layer.

[0075] (e) preparing an electron transport layer 5 (TPBi layer) on the perovskite layer 4 by vacuum evaporation;

[0076] (f) An electron injection layer 6 (LiF layer) and a cathode layer 7 (Al layer) are formed on the electron transport layer 5 by vacuum evaporation.

[0077] Among them, the one-step spin coating method mentioned in this embodiment refers to a method of directly spin coating the precursor solution on the substrate; the anti-solvent method refers to dropping anti-solvents such as chlorobenzene and toluene into the precursor solution during the spin coating process on the substrate; the two-step spin coating method refers to a preparation method of dissolving FABr and PbBr2 in two solvents respectively, and spin coating them on the substrate accordingly.

[0078] Among them, the thickness of the anode layer 1 is 150nm, the thickness of the hole transport layer 2 is 40nm, the thickness of the interface layer 3 is 2nm, the thickness of the perovskite layer 4 is 50nm, the thickness of the electron transport layer 5 is 50nm, the thickness of the electron injection layer 6 is 5nm, and the thickness of the cathode layer 7 is 100nm.

[0079] Using the optoelectronic device preparation method, a PeLED device based on FAPbBr3 (w / o represents the perovskite layer 4 without interface layer 3 modification) and interface modified with a zwitterionic polymer P1 (w / P1 represents the perovskite layer modified with the interface layer of P1 material, and so on) was prepared. The optoelectronic device was packaged and the device performance was tested outside the glove box.

[0080] like Figure 4 As shown in FIG, after the interface modification of the zwitterionic polymer P1, the PLQY of the perovskite layer 4 is increased from 37% to 65%, proving that the zwitterionic polymer P1 interface layer 3 has a passivating effect on the bottom surface of the perovskite layer 4; Figure 5-6 As shown in Figure 2, the current density of the PeLED device did not change significantly after the interface modification of the zwitterionic polymer P1, but the external quantum efficiency of the PeLED device at low current density was significantly improved (the highest EQE reached 11.34%). Figure 7 As shown, the electroluminescence spectra of the device before and after modification are basically the same (the luminescence peak is 534nm).

[0081] Example 2

[0082] The method for preparing the optoelectronic device in this example is the same as that in Example 1, except that the zwitterionic polymer P2 is used as the material of the interface layer 3 to modify the interface between the hole transport layer 2 and the perovskite layer 4. The chemical structure of the zwitterionic polymer P2 is:

[0083] like Figure 4 As shown in FIG, after the interface is modified by the zwitterionic polymer P2, the PLQY of the perovskite layer 4 is increased from 37% to 60%, proving that the zwitterionic polymer P2 interface layer 3 has a passivating effect on the bottom surface of the perovskite layer 4; Figure 5-6As shown in Figure 2, the current density of the PeLED device did not change significantly after the interface was modified with the zwitterionic polymer P2, but the external quantum efficiency of the PeLED device at low current density was significantly improved (the highest EQE reached 10.48%). Figure 7 As shown, the electroluminescence spectra of the device before and after modification are basically the same (the luminescence peak is 534nm).

[0084] Example 3

[0085] The method for preparing the optoelectronic device in this example is the same as that in Example 1, except that the zwitterionic polymer P3 is used as the material of the interface layer 3 to modify the interface between the hole transport layer 2 and the perovskite layer 4. The chemical structure of the zwitterionic polymer P3 is:

[0086] like Figure 4 As shown in FIG, after the interface is modified by the zwitterionic polymer P3, the PLQY of the perovskite layer 4 is increased from 37% to 62%, proving that the zwitterionic polymer P3 interface layer 3 has a passivating effect on the bottom surface of the perovskite layer 4; Figure 5-6 As shown in Figure 2, the current density of the PeLED device did not change significantly after the interface was modified with the zwitterionic polymer P3, but the external quantum efficiency of the PeLED device at low current density was significantly improved (the highest EQE reached 10.97%). Figure 7 As shown, the electroluminescence spectra of the device before and after modification are basically the same (the luminescence peak is 534nm).

[0087] Example 4

[0088] The method for preparing the optoelectronic device in this example is the same as that in Example 1, except that the zwitterionic polymer P4 is used as the material of the interface layer 3 to modify the interface between the hole transport layer 2 and the perovskite layer 4. The chemical structure of the zwitterionic polymer P4 is:

[0089] like Figure 4 As shown in FIG, after the interface is modified by the zwitterionic polymer P4, the PLQY of the perovskite layer 4 is increased from 37% to 58%, proving that the zwitterionic polymer P4 interface layer 3 has a passivating effect on the bottom surface of the perovskite layer; Figure 5-6 As shown in Figure 2, the current density of the PeLED device did not change significantly after the interface was modified with the zwitterionic polymer P4, but the external quantum efficiency of the PeLED device at low current density was significantly improved (the highest EQE reached 10.53%). Figure 7 As shown, the electroluminescence spectra of the device before and after modification are basically the same (the luminescence peak is 534nm).

[0090] Example 5

[0091] The method for preparing the optoelectronic device in this example is the same as that in Example 1, except that the zwitterionic polymer P5 is used as the interface layer 3 to modify the interface between the hole transport layer 2 and the perovskite layer 4. The chemical structure of the zwitterionic polymer P5 is:

[0092] like Figure 4 As shown in FIG, after the interface is modified by the zwitterionic polymer P5, the PLQY of the perovskite layer 4 is increased from 37% to 53%, proving that the zwitterionic polymer P5 interface layer 3 has a passivating effect on the bottom surface of the perovskite layer; Figure 5-6 As shown in Figure 2, the current density of the PeLED device did not change significantly after the interface was modified with the zwitterionic polymer P5, but the external quantum efficiency of the PeLED device at low current density was significantly improved (the highest EQE reached 9.86%). Figure 6 As shown in the figure, the electroluminescence spectra of the device before and after modification are basically the same (peak emission at 534 nm).

[0093] Example 6 to Example 11

[0094] The preparation method of the optoelectronic devices in the examples is the same as that in Example 1, except that the zwitterionic polymer P1 is dissolved in trifluoroethanol to prepare a solution with a mass concentration of 0 to 1 mg / mL. The concentrations of Examples 6 to 11 are 0, 0.1 mg / mL, 0.2 mg / mL, 0.3 mg / mL, 0.6 mg / mL, and 1 mg / mL, respectively. The optoelectronic devices prepared in Examples 6 to 11 were packaged and the device performance was tested outside the glove box. The test results are shown in FIG. Figures 8-9 As shown in the figure, with the continuous increase of P1 concentration, the current density of the PeLED device decreased, and the highest EQE of the device first increased and then decreased. The comparative test results determined that the optimal concentration of P1 was 0.2 mg / mL.

[0095] The above describes the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the foregoing embodiments. The foregoing embodiments and description merely illustrate the principles of the present invention. Various changes and modifications may be made to the present invention without departing from the spirit and scope of the present invention. Such changes and modifications are intended to fall within the scope of the present invention. The scope of protection claimed by the present invention is defined by the appended claims and their equivalents.

Claims

1. A photoelectric device, characterized in that: The invention comprises an anode layer, a cathode layer and a functional layer, wherein the functional layer is arranged between the anode layer and the cathode layer, the functional layer comprises a hole transport layer, an interface layer and a perovskite layer, the interface layer is arranged between the hole transport layer and the perovskite layer, the material of the interface layer is a zwitterionic polymer, the zwitterionic polymer has a positive charge group and a negative charge group, wherein the positive charge group is a cationic group containing N, C, S or P, and the negative charge group is a phosphate group, a phosphate ester group, a phosphite group, a carboxylate group, a sulfonate group, a sulfate group or a sulfonamide group, and the chemical structure of the zwitterionic polymer is shown in any one of formulas (1) to (3): ； Where, x = 0~10, n = 10~1000, R ⊕ is a positively charged group in zwitterionic polymers, It is a negatively charged group in zwitterionic polymers.

2. The optoelectronic device according to claim 1, wherein: The thickness of the interface layer is 1-10 nm.

3. The optoelectronic device according to claim 1, wherein: The hole transport layer is a PEDOT:PSS layer.

4. The optoelectronic device according to claim 1, wherein: The material structure of the perovskite layer is generally represented by the formula ABX3, wherein A is a metal cation or an alkylammonium salt, and A is Cs + , K + , Rb + , R 1 NH3 + or NH2R 2 NH2 + , R 1 C n H 2n+1 , n ≥ 1, R 2 C n H n , n ≥ 1; X is a halogen anion, X is selected from Cl - Br - or I - At least one of; B is a divalent metal ion, B is selected from Cu 2+ 、Ni 2+ 、Co 2+ 、Fe 2+ 、Mn 2+ Cr 2+ 、Pd 2+ 、Cd 2+ 、Ge 2+ 、Sn 2+ , Pb 2+ 、Eu 2+ 、Bi 2+ 、Sb 2+ 、Yb 2+ At least one of .

5. The optoelectronic device according to claim 1, wherein The functional layer further includes an electron transport layer and an electron injection layer, the electron transport layer is arranged between the perovskite layer and the electron injection layer, the electron injection layer is arranged between the electron transport layer and the cathode layer, the film thickness of the electron injection layer is 1~10nm, and the photoelectric device is an electroluminescent device.

6. The optoelectronic device according to claim 1, wherein: The functional layer further includes an electron transport layer, which is arranged between the perovskite layer and the cathode layer, and the optoelectronic device is a solar cell.

7. A method for preparing a photoelectric device according to any one of claims 1 to 6, characterized in that: Including steps: S1 provides a substrate having a first electrode layer, where the first electrode layer is the anode layer or the cathode layer; S2: sequentially arranging the material of the hole transport layer, the material of the interface layer, and the material of the perovskite layer on the first electrode layer from bottom to top; S3: disposing a material of a second electrode layer on the perovskite layer.

8. The method for preparing a photoelectric device according to claim 7, wherein: The first electrode layer is an anode layer, and the step S2 further comprises the steps of: S21: placing a PEDOT:PSS solution on the surface of the anode layer to form the hole transport layer; S22: placing a zwitterionic polymer solution on the surface of the hole transport layer to form the interface layer; S23: placing a perovskite solution on the surface of the interface layer to form the perovskite layer.

9. The method for preparing a photoelectric device according to claim 8, wherein: The step S2 comprises the steps of: S210: placing a PEDOT:PSS solution on an ITO substrate and annealing the solution at 130-170° C. for 20-40 minutes to form the hole transport layer; S220 dissolving the zwitterionic polymer in trifluoroethanol to prepare a standby solution, placing the standby solution on the surface of the hole transport layer, and annealing at 80-120° C. for 2-10 minutes to form the interface layer; S230: placing a perovskite solution on the surface of the interface layer under a nitrogen environment, and annealing at 60-100° C. for 5-15 minutes to form the perovskite layer.

10. The method for preparing a photoelectric device according to claim 8, wherein: In step S22, the zwitterionic polymer is dissolved in trifluoroethanol to prepare a solution with a mass concentration of 0.1-0.4 mg / mL.

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