Process chamber with side support

CN113178401BActive Publication Date: 2026-07-17ASM IP HLDG BV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ASM IP HLDG BV
Filing Date
2021-01-21
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

The existing mechanical support structure of semiconductor processing chambers is prone to collapse under high temperature and high pressure conditions, and the uneven distribution of radiation energy leads to uneven deposition on the wafer surface, especially affecting the quality of the film during chemical vapor deposition.

Method used

The design employs a curved upper and lower wall, combined with a side rib support structure and rails, which are connected by welding or connectors to form a robust structure, while avoiding the distribution of ribs on the top and bottom walls to maintain thermal uniformity.

Benefits of technology

It improves the structural integrity and thermal uniformity of the processing chamber, enhances the deposition uniformity on the wafer surface, and improves the quality of the film, especially under temperature-sensitive processing conditions.

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    Figure CN113178401B_ABST
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Abstract

A process chamber can include a curved upper wall extending longitudinally from a first end portion of the reaction chamber to a second end portion of the reaction chamber. The process chamber can include a curved lower wall cooperating with the curved upper wall to at least partially define an interior cavity, the curved lower wall connected to the curved upper wall from a first side of the reaction chamber to a second side of the reaction chamber from the first end portion to the second end portion. A track can extend along an exterior surface of the process chamber from the first end portion to the second end portion, the track disposed at or proximate to a connection between the curved upper wall and the curved lower wall.
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