Test apparatus and method for testing semiconductor devices

Abstract

A test apparatus and method for testing a semiconductor device. The semiconductor device includes an integrated circuit and a plurality of external radiation elements located at a surface of the device. The external radiation elements include at least one transmitting element and a receiving element. The test apparatus includes a plunger. The plunger includes a dielectric portion having a surface for resting against the surface of the device. The plunger also includes at least one waveguide. Each waveguide extends through the plunger to route electromagnetic radiation emitted by one of the transmitting elements of the device to one of the receiving elements of the device. Each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiation element of the device. The dielectric portion is configured to provide a matching interface for the electromagnetic coupling of the waveguide openings with the plurality of external radiation elements of the device.

Description

Technical Field

[0001] This specification relates to a test apparatus for testing semiconductor devices and a method for testing semiconductor devices. Background Technology

[0002] Today's radio frequency (RF) transceiver integrated circuits (ICs) with integrated radiating elements, such as antennas or transmitters, need to be tested in production. This testing may include testing of the internal die and the antenna / transmitter itself, as well as the properties of the package that can affect the performance of the antenna / transmitter (e.g., the "artificial dielectric" required to achieve the desired directional characteristics of the antenna / transmitter).

[0003] Typically, these tests can only be performed via an external loopback path from the transmitter antenna / transmitter to the receiver antenna / transmitter. The stringent specifications for IC transmit power, transmit and receive antenna / transmitter gain, and receiver noise figure require extremely precise loopback paths, despite the challenging environmental conditions at production test sites.

[0004] In advanced radar transceiver ICs, a recent development is the integration of both the transmitting and receiving antennas into a single package (Antenna In-Package: AiP). Another technique involves integrating the transmitter into the package, with the transmitter connected to an external antenna via waveguides. For such ICs, the RF transmitter output power and receiver noise figure are critical parameters; however, measuring them is very difficult because the results are highly dependent on numerous conditions, such as:

[0005] • Directional characteristics of the antenna under test (AUT);

[0006] • Impedance matching between the AUT and on-chip active devices (such as low-noise amplifiers (LNAs) and power amplifiers (PAs));

[0007] • Dielectric properties of the laminated materials used to realize the AUT (e.g., δk and tanδ);

[0008] • The x / y and z displacements of the AUT relative to the reference antenna used for measurement; and

[0009] • Measure the contact pressure of the antenna on the IC package.

[0010] If the RF signal from the IC's transmit antenna is fed to the IC's receive antenna via an external loopback path, these dependencies can be mitigated, allowing the IC to measure the amplitude and phase of the received signal.

[0011] Loopback paths can be implemented using waveguides. Waveguide parameters such as wall thickness, surface roughness, and alignment accuracy with the AUT significantly affect the measurement. Therefore, a standardized loopback path device is desired for all situations requiring precise measurement of RF parameters, including, for example:

[0012] • Verify with the IC manufacturer;

[0013] • Verify with the OEM manufacturer;

[0014] • Production testing by IC manufacturers;

[0015] • The customer at the OEM refused to conduct analysis;

[0016] • Customers at IC manufacturers refused to perform analysis;

[0017] • Demonstrate compliance at the customer's location (e.g., lifespan testing); and

[0018] • On-site, that is, adjusting the new external antenna in the car workshop.

[0019] There is currently no solution for a standardized loopback path device in different locations that combines high precision and high sensitivity to antenna or transmitter misalignment, but low sensitivity to loopback path device misalignment. Summary of the Invention

[0020] The aspects of this disclosure are set forth in the appended independent and dependent claims. Combinations of features from dependent claims may be suitably combined with features of the independent claims, and not merely as expressly set forth in the claims.

[0021] According to one aspect of this disclosure, this document relates to a test apparatus for testing a semiconductor device, the semiconductor device including an integrated circuit and a plurality of external radiating elements located on the surface of the device, the radiating elements including at least one emitting element and at least one receiving element, the test apparatus comprising:

[0022] A plunger, the plunger comprising:

[0023] The dielectric portion has a surface for placement against the surface of the device; and

[0024] At least one waveguide, wherein each waveguide extends through the plunger to route electromagnetic radiation emitted by one of the transmitting elements of the device to one of the receiving elements of the device, wherein each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element among a plurality of radiating elements located at the surface of the device.

[0025] The dielectric portion is configured to provide a matching interface for the electromagnetic coupling of the multiple waveguide openings of the plunger with the multiple radiating elements of the device.

[0026] According to another aspect of this disclosure, a method for testing a semiconductor device is provided, the method comprising:

[0027] A semiconductor device is provided, the semiconductor device comprising an integrated circuit and a plurality of external radiating elements located on the surface of the device, the external radiating elements comprising at least one emitting element and at least one receiving element;

[0028] A testing device is provided, the testing device comprising:

[0029] A plunger, the plunger comprising:

[0030] The dielectric portion has a surface for placement against the surface of the device; and

[0031] At least one waveguide, wherein each waveguide extends through the plunger to route electromagnetic radiation emitted by one of the transmitting elements of the device to one of the receiving elements of the device, wherein each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element among a plurality of radiating elements located at the surface of the device.

[0032] The dielectric portion is configured to provide a matching interface for the electromagnetic coupling of the multiple waveguide openings of the plunger with the multiple external radiating elements of the device;

[0033] The surface of the dielectric portion of the plunger is placed against the surface of the device; and

[0034] Electromagnetic radiation is emitted from at least one of the transmitting elements to at least one of the receiving elements via at least one waveguide of the plunger.

[0035] The dielectric section can provide a matching interface for electromagnetic coupling between the multiple waveguide openings of the plunger and the multiple radiating elements of the device.

[0036] The radiating elements of a semiconductor device may include, for example, antennas and / or transmitters. Therefore, the radiating elements may include, for example, a transmitting antenna or a transmitting transmitter, while the receiving elements may include, for example, a receiving antenna or a receiving transmitter.

[0037] The dielectric portion has a thickness measured between multiple external radiating elements located on the surface of the device and multiple waveguide openings of the plunger, the thickness being substantially equal to λ / 2, where λ is the wavelength of the electromagnetic radiation in the dielectric portion. The thickness can be selected based on the expected wavelength of the electromagnetic radiation used during testing, thereby allowing for good matching and coupling between the multiple waveguide openings of the plunger and the multiple external radiating elements of the device.

[0038] The dielectric portion may have a curved surface for coupling electromagnetic radiation emitted by a plurality of emitting elements of the device to openings in a plurality of waveguide openings of the plunger.

[0039] When viewed from the waveguide of the plunger, the curved surface can be concave or convex.

[0040] The dielectric portion can be additionally configured to provide a seal to prevent airflow from passing through multiple waveguide openings of the external radiating element and / or plunger of the semiconductor device during testing using the test equipment. Therefore, the dielectric portion can also serve as a seal to prevent airflow near the waveguide openings of the radiating element and plunger of the semiconductor device during the testing process, which could otherwise introduce errors into the test results.

[0041] The test apparatus may additionally include an attenuation section located in at least one of the waveguides of the plunger. Given that the transmitting power of the transmitting element may exceed the power that a single receiving element can receive, this allows the receiving element of the semiconductor device to receive electromagnetic radiation from one (or more) transmitting elements of the semiconductor device.

[0042] At least one waveguide is configured to route electromagnetic radiation emitted by one of the transmitting elements of the device to multiple receiving elements of the device. Given that the transmitting power of a transmitting element may exceed the power that a single receiving element can receive, this allows multiple receiving elements to be used together to test the transmitting element (and vice versa).

[0043] The device waveguide can have:

[0044] The first branch is used to transmit electromagnetic radiation emitted by the transmitting element; and

[0045] At least two additional branches coupled to the first branch are used to route the electromagnetic radiation to the plurality of receiving elements.

[0046] The dielectric portion may include high-density polyethylene (HDPE) or polycarbonate (e.g., polycarbonate), peek, or ceramic materials.

[0047] According to another aspect of this disclosure, an apparatus including the above-described test equipment and semiconductor device is provided.

[0048] A semiconductor device may include a semiconductor die located within a package. The surface of the device where multiple radiating elements are located may be the outer surface of the package.

[0049] Semiconductor devices may include:

[0050] The semiconductor die located in the package; and

[0051] Carrier, wherein the encapsulation is mounted on the carrier,

[0052] The surface of the device on which multiple radiating elements are located is the surface of the carrier.

[0053] The method may further include using a plunger to press the semiconductor device into a socket. Therefore, the testing method can be performed as part of the assembly process. Attached Figure Description

[0054] Embodiments of this disclosure will now be described by way of example only with reference to the accompanying drawings, in which the same reference numerals refer to similar elements, and wherein:

[0055] Figure 1A A semiconductor device using a stripline antenna is shown;

[0056] Figure 1B A semiconductor device using an external emitter is shown;

[0057] Figure 1C A semiconductor device using an integrated emitter is shown;

[0058] Figure 2A , 2B Figures 2C and 2C illustrate a semiconductor device, a dielectric layer, and a plunger according to embodiments of the present disclosure;

[0059] Figure 3 A semiconductor device and a dielectric layer according to an embodiment of the present disclosure are shown;

[0060] Figure 4 A semiconductor device and plunger according to an embodiment of the present disclosure are shown;

[0061] Figure 5A and 5B A semiconductor device, dielectric layer, and plunger according to embodiments of the present disclosure are shown;

[0062] Figure 6A and 6B A semiconductor device, dielectric layer, and plunger according to embodiments of the present disclosure are shown;

[0063] Figure 7 A semiconductor device and plunger according to an embodiment of the present disclosure are shown;

[0064] Figure 8 A semiconductor device and a test apparatus according to embodiments of the present disclosure are shown;

[0065] Figure 9 This illustrates the effect of the mismatch between the lateral position of the radiating element of the semiconductor device and the waveguide opening in the test apparatus; and

[0066] Figures 10 to 12 Each illustration shows the effect of a mismatch between the lateral position of the radiating element of a semiconductor device according to an embodiment of the present disclosure and a waveguide opening in a test apparatus. Detailed Implementation

[0067] Embodiments of this disclosure are described below with reference to the accompanying drawings.

[0068] Figure 1A , 1B Examples of semiconductor devices 10 are shown in both 1C and 1C.

[0069] Figure 1A The device 10 includes a semiconductor die 6 forming an integrated circuit, which typically includes a circuit system for transmitting / receiving and processing millimeter-wave signals, for example, used in the automotive industry. The semiconductor die 6 may be packaged in a package 4. In this example, the semiconductor die 6 is mounted on the surface of a carrier 2, such as a printed circuit board. The carrier 2 may, for example, include RO3003 or RF4 materials. The electrical connection 8 between the carrier and the semiconductor die 6 can be, for example, [missing information - likely a type of material]. Figures 1A to 1C The array of solder balls shown is used to form the connection, although other types of connections known in the art can also be used.

[0070] Figure 1A , 1B Each of the semiconductor devices 10 in 1C includes a plurality of radiating elements located on the surface of the device 10. Figures 1A to 1C In this example, the radiating element is provided in the form of stripline antennas 12 and 14, which include metal strips located on the surface of the carrier 2. The radiating element includes multiple transmitting units 12 and multiple receiving units 14. The electrical connection 16 between the radiating element and the semiconductor die 6 can be formed by a combination of metal traces located on the surface of the carrier 2 and the aforementioned electrical connection 8.

[0071] Figure 1B The semiconductor device 10 shown is similar to Figure 1AThe illustrated semiconductor device, in addition to device 10, includes a waveguide antenna 20 that can be located on top of the semiconductor die 6 and carrier 2. The waveguide antenna 20 includes channels 18 for directing electromagnetic radiation to / from a plurality of receiving elements 14 and a plurality of transmitting elements 12. These channels can be terminated in the transmitting element array 22 and the receiving element array 24. Figure 1B In the example, the emitting element 22 and the receiving element 24 form the radiating element of the semiconductor device 10. Figure 1B The arrangement of the stripline antenna and radiating elements in the example can be referred to as an external transmitter.

[0072] Figure 1C The semiconductor device 10 shown is similar to Figure 1C The semiconductor device shown, except Figure 1C The device 10 in the middle does not include the above-mentioned Figure 1A and 1B The aforementioned stripline antenna. Conversely, Figure 1C The device 10 includes a transmitting element 32 for transmitting millimeter-wave signals and a receiving element 34 for transmitting millimeter-wave signals disposed within a package 4. An electrical connection 36 between the semiconductor die 6 and the transmitting element 32 and the receiving element 34 may pass through the package (and / or via an electrical connection 8). Like... Figure 1B Semiconductor device 10, Figure 1C The semiconductor device 10 includes a waveguide antenna 20, which may be located on top of the semiconductor die 6 and the carrier 2. The waveguide antenna 20 includes channels 38 for directing electromagnetic radiation to / from the receiving element 34 and the transmitting element 32. Similarly, these channels may terminate in the transmitting element array 22 and the receiving element array 24. Figure 1C In this example, the emitting element 22 and the receiving element 24 again form the radiating element of the semiconductor device 10. Figure 1C In the example, the arrangement of the transmitting element 32, the receiving element 34, and the radiating elements 22 and 24 can be referred to as an integrated transmitter.

[0073] exist Figure 1A In this context, the package 4 can be considered as forming a package for the semiconductor die 6. Figure 1B and 1C In this context, the package 4 and / or the waveguide antenna 20 can be considered as forming a package of the semiconductor die 6.

[0074] As mentioned earlier, in order to test Figures 1A to 1CThe semiconductor device 10 of the type shown requires testing of the operation of its radiating element. This testing may include placing a plunger against the surface of the semiconductor device 10, the plunger having waveguide openings for electromagnetic coupling to the radiating element of the device 10. The plunger may include a loopback path, allowing the receiving element of the device 10 to receive electromagnetic radiation (millimeter-wave signals) emitted by the emitting element of the device 10. Currently, there is no solution for a standardized loopback path device in various locations that combines high precision and high sensitivity to radiating element misalignment with low sensitivity to loopback path device misalignment.

[0075] Now we will combine Figures 2A to 12 A test apparatus according to an embodiment of the present disclosure is described.

[0076] Figure 2A The above information is shared. Figures 1A to 1C The semiconductor device 10 described above includes a semiconductor die 6 that can be disposed within a package 30. The device 10 also includes a waveguide antenna 20 comprising a plurality of radiating elements arranged in an array, the array including a transmitting element 22 and a receiving element 24 disposed on the surface of the device 10. The semiconductor die 6, the package 30, and the waveguide antenna 20 can be mounted on the surface of a carrier 20, as described above. Figures 1A to 1C The explanation given.

[0077] In this embodiment, the test equipment includes a dielectric portion 40 that may be included in the plunger. Figure 2B The dielectric portion 40 is shown, while the rest of the plunger is omitted (see below). Figure 2C Further details describing the plunger). The dielectric portion 40 may be provided in the form of a layer. The dielectric portion 40 has a surface ( Figure 2B The surface of the dielectric portion 40 shown (as shown below) can be placed against the surface of the semiconductor device 10, which includes the radiating element of the device 10. The surface against which the semiconductor device 10 is placed can be substantially planar, for example, but the profile of the surface can generally match the profile of the surface of the semiconductor device 10. The dielectric portion 40 may also have a surface 42 (which is generally the surface of the dielectric portion 40 opposite to the surface against which the semiconductor device 10 is placed). Further features of the plunger (e.g., a plurality of waveguide openings of the plunger, which will be described below) can be positioned against the surface 42 of the dielectric portion 40.

[0078] Turning Figure 2CThe plunger may additionally include a block 50 that accommodates a plurality of waveguide openings 60 and waveguides 52. The block may include metal (e.g., copper). The waveguide openings 60 are arranged in positions corresponding to the positions of the transmitting element 22 and the receiving element 24 disposed on the surface of the device 10, thereby allowing the plurality of waveguide openings 60 to electromagnetically couple to the corresponding transmitting / receiving element among the plurality of radiating elements located on the surface of the device.

[0079] Waveguide 52 may include a channel extending from waveguide opening 60 into the plunger to route electromagnetic radiation emitted by transmitting element 22 to receiving element 24 in a loop arrangement, as explained above. The waveguide may be dielectric-filled. Each waveguide may extend between at least one transmitting element 22 and at least one receiving element 24. Figure 2C As shown, the waveguide opening 60 can gradually taper outward as it extends away from the waveguide 52 in order to provide better matching with the electromagnetic field in the dielectric portion 40.

[0080] The dielectric portion 40 is configured to provide a mating interface for electromagnetic coupling of the plunger's multiple waveguide openings 60 to multiple radiating elements (emitting element 22 and receiving element 24) of the semiconductor device 10. For this purpose, the material of the dielectric portion 40 can be selected based on the specific application and the electromagnetic wavelength used in testing the device 10. Suitable materials for the dielectric portion 40 include high-density polyethylene (HDPE) and polycarbonate, such as Makrolon or PEEK, or ceramic materials. The thickness T of the dielectric portion 40 can also be selected (see [reference needed]). Figure 2B This is to enhance the matching interface between the multiple waveguide openings 60 of the plunger and the multiple radiating elements (emitting element 22 and receiving element 24) of the semiconductor device 10. Specifically, the thickness T of the dielectric portion 40 can be selected as λ / 2, where λ is the wavelength of the electromagnetic radiation to be used during testing of the semiconductor device 10 (i.e., emitted by the emitting element 22 and received by the receiving element 24). Note that λ represents the wavelength of the electromagnetic radiation within the dielectric portion 40. By way of example only, in the case where the dielectric portion 40 comprises HDPE, and considering an exemplary frequency of 77 GHz, the thickness T can be selected as approximately 2.7 mm. In another example, where the dielectric portion 40 comprises polycarbonate, and again considering an exemplary frequency of 77 GHz, the thickness T can be selected as approximately 2 mm.

[0081] The dielectric portion 40 can also be used to provide a seal to prevent unwanted airflow during testing of the semiconductor device 10 using test equipment. For example, by placing the dielectric portion 40 against the surface of the semiconductor device 10 including the radiating element, the dielectric portion 40 can seal the surface of the semiconductor device 10 including the radiating element. This prevents airflow around the radiating element of the device 10, which would otherwise affect the test results. It is also noted that the dielectric portion 40 can seal the waveguide opening 60 of the plunger, again preventing unwanted airflow.

[0082] although Figures 2A to 2C The embodiments are relative to, for example Figure 1B and 1C The semiconductor device with waveguide antenna 20 shown is described, but it is conceivable that the plunger could also be used with... Figure 1A The semiconductor device 10 of the type shown is used together. In this case, the waveguide opening 60 of the plunger can be directly coupled to the stripline antennas 12, 14 on the surface of the carrier 2, which in this embodiment form the radiating elements of the device 10.

[0083] In some embodiments, the dielectric portion may include a curved surface for coupling electromagnetic radiation emitted by the plurality of transmitting elements 22 of the device 10 to waveguide openings 60 of the plurality of waveguide openings of the plunger. Conversely, the curved surface may also allow electromagnetic radiation emitted by one of the waveguide openings 60 to couple to the plurality of receiving elements 24 of the device. Figure 3 An example of this embodiment is shown. (With) Figure 2B Same, Figure 3 The remaining portion of the plunger is omitted when showing the dielectric portion 40 in order to illustrate the structure of the curved surface 44. The curved surface can serve as a lens antenna. In this embodiment, the curved surface 44 is concave when viewed from the waveguide of the plunger. In other embodiments, the curved surface 44 can be convex when viewed from the waveguide of the plunger. For example, the curved surface 44 can have a shape such as... Figure 3 The diagram shows a roughly cylindrical profile; however, other surface profiles are also conceivable. The curvature of the curved surface 44 can be selected based on the dielectric constant of the material used to form the dielectric portion 40. The space created between the curved surface 44 and the waveguide opening 60 of the plunger can be filled with another dielectric, such as air.

[0084] In some embodiments, at least one waveguide of the plunger can be configured to route electromagnetic radiation emitted by one of the transmitting elements 22 of the device 10 to a plurality of receiving elements 24 of the device 10. This will be discussed below in conjunction with... Figure 4 Examples of this situation are described in embodiments 5 and 6.

[0085] Figure 4 The diagram schematically illustrates the coupling of a plurality of waveguide openings 60 of a plunger according to an embodiment of the present disclosure to a plurality of transmitting elements 22 (Tx1, Tx2, Tx3) and a plurality of receiving elements 24 (Rx1, Rx2, Rx3, Rx4) of a semiconductor device 10. In this embodiment, waveguide 62 of the plunger routes electromagnetic radiation from transmitting element Tx1 to receiving element Rx4, while waveguide 66 routes electromagnetic radiation from transmitting element Tx2 to receiving element Rx3. Thus, waveguides 62 and 66 each route electromagnetic radiation between a single transmitting element 22 and a single receiving element 24. However, as Figure 4 As shown, in this embodiment, waveguide 64 routes electromagnetic radiation from transmitting element Tx3 to receiving elements Rx1 and Rx2. Considering that the transmitting power of transmitting element 22 may exceed the power that a single receiving element 24 can receive, this arrangement allows multiple receiving elements 24 to be used together for the transmitting element 22 of the test apparatus 10 (and vice versa).

[0086] To route electromagnetic radiation from the emitting element 22 of device 10 to more than one receiving element 24 of device 10, the waveguide used (e.g., see...) Figure 4 The waveguide 64 in the diagram can include multiple branches. For example, in... Figure 4 middle, Figure 4 The waveguide 64 includes a first branch 64A for transmitting electromagnetic radiation emitted by the transmitting element Tx1, a second branch 64B for routing the electromagnetic radiation to the receiving element Rx1, and a third branch 64C for routing the electromagnetic radiation to the receiving element Rx2. In the embodiment described, the first branch 64A of the waveguide 64 therefore splits into two separate branches 64B and 64C at position 65.

[0087] Figure 5A and 5B It shows having at least one or more about Figure 4 An exemplary structure of the plunger of the branch waveguide of the described type. Figure 5A It is a 3D view, and Figure 5B This is a plan view taken from above the surface of the semiconductor device 10, which has radiating elements. The semiconductor device 10 itself is also... Figure 5A As shown in the image.

[0088] Figure 5A and 5B The arrangement of waveguides 62, 64, and 66 in the middle is similar to Figure 4 The arrangement shown in the diagram includes waveguides 62 and 66 that each route electromagnetic radiation between a single transmitting element 22 and a single receiving element 24, and waveguide 64 including multiple branches for routing electromagnetic radiation from the transmitting element 22 of the device 10 to one or more receiving elements 24 of the device 10. Figure 5A and5B It also includes a cutout 70 in block 50, which can receive a plunger nozzle for moving the plunger into place during the testing process. Figure 5A and 5B As shown, waveguides 62, 64, and 66 can be shaped around the cutout 70. For example, branches of waveguide 64 split on one side of the cutout, and branches leading to the receiving element 24 of device 10 can extend through the plunger on the opposite side of the cutout 70.

[0089] Figure 6A and 6B It shows having at least one or more about Figure 4 An exemplary structure of the plunger of the branch waveguide of the described type. Figure 6A It is a cross-sectional view, and Figure 6B This is a plan view taken from above the surface of the semiconductor device 10, which has radiating elements. The semiconductor device 10 itself is also... Figure 6A As shown in the image.

[0090] Figure 6A and 6B The arrangement of waveguides 62, 64, and 66 in the middle is similar to that of waveguides 62, 64, and 66. Figure 4 The arrangement shown in the diagram includes waveguides 62 and 66 that each route electromagnetic radiation between a single transmitting element 22 and a single receiving element 24, and waveguide 64 including multiple branches for routing electromagnetic radiation from the transmitting element 22 of the device 10 to one or more receiving elements 24 of the device 10.

[0091] In the described embodiment, a printed circuit board (PCB) 100 located on the plunger is used to route the waveguide. The PCB 100 includes patterned metallic features 102 shaped and configured to route electromagnetic radiation within the waveguide. It is conceivable that this relates to... Figure 6A and 6B The PCB 100 of the described type can also be used to implement routing in a plunger that does not include, for example, branch waveguides 64, but in which each waveguide routes electromagnetic radiation from a single transmitting element 22 of device 10 to a single receiving element 24.

[0092] In some embodiments, one or more waveguides may be provided with attenuation portions for attenuating electromagnetic radiation emitted by one or more emitting elements 22 of the semiconductor device 10, and then looping the electromagnetic radiation back to one or more receiving elements 24 of the device 10. Figure 7 Such an example is shown in the embodiments. For example... Figure 7As shown, the attenuation section 90 may be located within the waveguide 68. Suitable materials for the attenuation section include absorbing foams, such as those available from ECOSORB. Considering that the transmit power of one or more transmitting elements 22 may exceed the power that a single receiving element 24 can receive, the attenuation section 90 may allow the receiving element 24 of the semiconductor device 10 to receive electromagnetic radiation from one (or more) transmitting elements 22 of the semiconductor device 10.

[0093] In standard methods for measuring the RF parameters of mmWave devices, the RF parameters of the mmWave integrated circuits are measured directly at customer verification sites and in field repair shops during verification and production testing. This typically requires mmWave test lab equipment, standardized measurement antennas, and several measurement parameters that need to be standardized. Despite the high cost and effort involved in such measurements, the results are often too inaccurate and not sufficiently repeatable or reproducible. Therefore, due to the varying measurement equipment and several other parameters that are difficult to standardize, this process is unsuitable for performing accurate mmWave radar measurements in varying environments.

[0094] As previously mentioned, testing of an mmWave device can be performed by forming a loopback path, wherein electromagnetic radiation emitted by the device's transmitting element can loop back to the device's receiving element. Such testing may include the following steps.

[0095] First, RF parameters on several integrated circuits can be directly measured in the mmWave RF lab. Then, external devices containing loopback paths can be used to determine the RF parameters of these integrated circuits. The RF lab can correlate the RF parameters measured by the lab equipment with the RF loopback parameters measured by the loopback method. The RF loopback parameters measured under standardized conditions can then be used as a reference.

[0096] Therefore, this approach guarantees customers parameters measured using a standardized loopback device through loopback testing, not those measured in an mmWave RF lab. In other words, it guarantees the received power and received noise level measured by the integrated circuit when using the loopback device. Transmitter output power or receiver noise figure cannot be guaranteed.

[0097] Then, the loopback device can be used in all situations where RF parameters are required, such as verification, production testing, customer rejection testing, testing at customer sites and in auto repair shops.

[0098] Figure 8A test setup for testing a semiconductor device of the type described herein using a loopback method is schematically illustrated. The setup includes a test apparatus 100, which may include a waveguide having a waveguide opening 60 for looping electromagnetic radiation emitted by the emitting element 22 of the device under test 10 to the receiving element 24 of the device 10. For simplicity, Figure 8 The illustrated device 10 includes a single transmitting element 22 and a single receiving element, while the test equipment includes two corresponding waveguide openings 60 and a single unbranched waveguide. However, it should be understood that the principles described below also apply to device 10, which includes more than one transmitting element 22 and / or receiving element 24, and to test equipment including corresponding waveguide openings 60, and including as per [the relevant information] Figure 4 The test equipment for the branch waveguide explained in section 5.

[0099] Figure 8 A potential problem with the type of test setup shown is that misalignment of the waveguide opening 60 of the test device 100 with the radiating elements 22, 24 of the device under test 10 may lead to inaccurate test results. Figure 8 In this context, the lateral misalignment between the transmitting element 22 of device 10 and the corresponding waveguide opening 60 of test equipment 100 is represented as Δx. tx The misalignment between the receiving element 22 of device 10 and the corresponding waveguide opening 60 of test equipment 100 is represented as Δx. rx .

[0100] Figure 9 The effects of the misalignment described above are illustrated. Figure 9 The vertical axis represents the coupling factor (in dB) between the transmitting element 22 of device 10 and the corresponding waveguide opening 60 of test equipment 100 (left curve) and the coupling factor between the receiving element 24 of device 10 and the corresponding waveguide opening 60 of test equipment 100 (right curve). The coupling factor is displayed as misalignment Δx. tx (Left curve) and misaligned Δx rx (The function of the curve on the right). Note that for each radiating element 22, 24, it is assumed that when Δx tx and Δx rx When the value is zero, that is, when each radiating element 22, 24 and its corresponding waveguide opening 60 are positioned directly opposite each other without any lateral misalignment (by... Figure 9 When Tx1 and Rx1 in the diagram represent (i.e., when the peak coupling factor occurs), a peak coupling factor appears. Figure 9 As can be seen from the curve, the coupling factor increases with positive or negative misalignment Δx. tx Δx rx It decreases as it increases.

[0101] It is understandable that, assuming the fixed lateral spacing between the transmitting element 22 and the receiving element 24 is equal to the fixed lateral distance between the corresponding waveguide openings 60 of the test equipment 100, the lateral misalignment between the transmitting element 22 and its corresponding waveguide opening 60 of the test equipment 100 leads to the corresponding lateral misalignment between the receiving element 24 and its corresponding waveguide opening 60 of the test equipment 100. In other words, in Figure 9 In, Δx tx =Δx rx .

[0102] Figure 9 Tx2 and Rx2 correspond to small misalignments, while Tx3 and Rx3 correspond to larger misalignments. Due to the small misalignment of the radiating element / waveguide opening, compared to Tx1 and Rx1 (Δx... tx =Δx rx =0), the coupling factor of each radiating element / waveguide opening pair at Tx2 and Rx2 decreases, and due to the large misalignment of the radiating element / waveguide openings, the coupling factor of each radiating element / waveguide opening pair at Tx3 and Rx3 decreases further compared to Tx2 and Rx2.

[0103] According to embodiments of this disclosure, it is intentional that the lateral spacing between the waveguide openings 60 of the test device 100 is greater than or less than the lateral spacing between the corresponding transmitting element 22 and receiving element 24 of the device 10. As will now be combined Figure 10 As explained, this automatically (and counterintuitively) leads to misalignment between the transmitting element 22 and receiving element 24 of the device under test 10 and the corresponding waveguide opening 60 of the test equipment 100.

[0104] Similar to Figure 9 , Figure 10 The coupling factor (left curve) between the transmitting element 22 of the device under test 10 and its corresponding waveguide opening 60 of the test equipment 100 is shown, as well as the coupling factor (right curve) between the receiving element 24 of the device under test 10 and its corresponding waveguide opening 60 of the test equipment 100. In the embodiment described, the lateral spacing between the waveguide openings 60 of the test equipment 100 is intentionally smaller than the lateral spacing between the transmitting element 22 and the receiving element 24. Therefore, when the test equipment 100 moves to its measurement position, there will always be at least some misalignment between the transmitting element 22 and its corresponding waveguide opening 60 and / or between the receiving element 24 and its corresponding waveguide opening 60.

[0105] exist Figure 10 The diagram shows three example locations of the test device 100: Tx1, Rx1; Tx2, Rx2; and Tx3, Rx3.

[0106] Note that positions Tx2 and Rx2 cause equal amounts of misalignment (albeit in opposite directions) between the transmitting element 22 and its corresponding waveguide opening 60 of the test device 100, and between the receiving element 24 and its corresponding waveguide opening 60. That is, for positions Tx2 and Rx2, (Δx tx =-Δx rx ).

[0107] At positions Tx1, Rx1, the misalignment between the transmitting element 22 and its corresponding waveguide opening 60 decreases relative to positions Tx2, Rx2, while the misalignment between the receiving element 24 and its corresponding waveguide opening 60 increases. Similarly, at positions Tx3, Rx3, the misalignment between the transmitting element 22 and its corresponding waveguide opening 60 increases relative to positions Tx2, Rx2, while the misalignment between the receiving element 24 and its corresponding waveguide opening 60 decreases. Therefore, it should be understood that there is a tendency for the decrease in the total coupling factor due to the misalignment relative to positions Tx2, Rx2 to be offset (considering that the loopback test arrangement requires the electromagnetic radiation passing through the waveguide of the test device 100 to couple twice between the device 10 and the test device 100: once at the transmitting element 22 and once at the receiving element 24). Therefore, the intentional reduction in the lateral spacing between the waveguide openings 60 of the test device 100 results in an overall decrease in the sensitivity of the coupling factor to misalignment (relative to position Tx2, Rx2) between the waveguide openings 60 of the test device 100 and the waveguide openings of the device under test 10. For a first-order approximation, the total coupling factor Tx1 + Rx1 ≈ Tx2 + Rx2 ≈ Tx3 + Rx3. Using a test device 100 with a loopback waveguide arrangement can improve the accuracy and repeatability of tests on semiconductor devices 10 of this type.

[0108] For example, refer to Figure 11 Understandable, although Figure 10 In one embodiment, the lateral spacing between the waveguide openings 60 is smaller than the lateral spacing between the transmitting element 22 and the receiving element 24, but similar benefits can be achieved when the lateral spacing between the waveguide openings 60 is larger than the lateral spacing between the transmitting element 22 and the receiving element 24. Figure 11 The image shows three example locations of the test device 100 again, although this time for test device 100 where the lateral spacing between waveguide openings 60 is greater than the lateral spacing between transmitting element 22 and receiving element 24: Tx1, Rx1; Tx2, Rx2; and Tx3, Rx3.

[0109] Similarly, positions Tx2 and Rx2 cause equal amounts of misalignment (albeit in opposite directions) between the transmitting element 22 and its corresponding waveguide opening 60 of the test device 100, and between the receiving element 24 and its corresponding waveguide opening 60. That is, for positions Tx2 and Rx2, (-Δx tx =Δx rx ).

[0110] exist Figure 11 In the above description, at positions Tx1, Rx1, the misalignment between the transmitting element 22 and its corresponding waveguide opening 60 decreases again relative to positions Tx2, Rx2, while the misalignment between the receiving element 24 and its corresponding waveguide opening 60 increases again. Similarly, at positions Tx3, Rx3, the misalignment between the transmitting element 22 and its corresponding waveguide opening 60 increases again relative to positions Tx2, Rx2, while the misalignment between the receiving element 24 and its corresponding waveguide opening 60 decreases again. Therefore, it will be recognized again that there is a tendency for the decrease in the total coupling factor due to the misalignment relative to positions Tx2, Rx2 to be offset. Therefore, the aforementioned intentional increase in the lateral spacing between the waveguide openings 60 of the test device 100 results in an overall decrease in the sensitivity of the coupling factor to the misalignment (relative to positions Tx2, Rx2) between the waveguide openings 60 of the test device 100 and the waveguide opening of the device under test 10. Similarly, for the first-order approximation, the total coupling factor Tx1 + Rx1 ≈ Tx2 + Rx2 ≈ Tx3 + Rx3. Figure 10 As in the embodiments described herein, a test apparatus 100 with a loopback waveguide arrangement is used, which can therefore improve the accuracy and repeatability of tests on semiconductor devices 10 of this type.

[0111] The lateral spacing between the waveguide openings 60 of the test device 100 can differ from the lateral spacing between the transmitting element 22 and the receiving element 24 by an amount (i.e., the former is greater than or less than the latter), which can be selected, for example, based on the shape of the coupling factor curve (e.g., slope, width, etc.). It is generally conceivable that the spacing between the waveguide openings 60 of the test device 100 can be at least 0.1% larger or at least 1% smaller than the spacing between the corresponding transmitting element 22 and receiving element 24 of the device 10.

[0112] According to embodiments of this disclosure, intentionally smaller or larger lateral spacing between waveguide openings can be used in any test apparatus having:

[0113] Test equipment for testing semiconductor devices, the test equipment comprising:

[0114] Surface for placement against the surface of the device; and

[0115] At least one waveguide, wherein each waveguide extends through the test device for routing electromagnetic radiation emitted by one of the transmitting elements of the device to one of the receiving elements of the device, wherein each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element among a plurality of radiating elements located at the surface of the device.

[0116] For example, the testing equipment may include the above-mentioned... Figures 1A to 7 Test equipment of any type described herein, although it is conceivable that the previously described dielectric portion 40 may or may not be present in these embodiments.

[0117] The semiconductor device under test may include an integrated circuit and multiple external radiating elements located on the surface of the device, each external radiating element including at least one emitting element and at least one receiving element. As an example, the device under test may be as described above. Figures 1A to 7 Device 10 of any of the types described in the text.

[0118] For example, regarding Figures 1A to 1C The described testing of a semiconductor device 10, including an in-package antenna (AiP) or an in-package transmitter (LiP), typically involves more than just testing the radiating elements of the device 10. The testing may also involve testing any internal antennas of the device 10 (e.g., Figure 1B The stripline antennas 12, 14 or shown Figure 1C (The transmitting element 32 and receiving element 34 are shown). Testing may also involve so-called "artificial dielectrics," which are structures that ensure the transmitting and receiving elements have the expected directional characteristics.

[0119] Temperature cycling, aging, and / or manufacturing variations / defects can cause defects to manifest in different ways. In some cases, the position of one of the transmitting or receiving elements of device 10 can be shifted to a position different from that intended during manufacturing. More frequently, the geometric antenna position may remain the same, but the apparent antenna position (i.e., the effective position according to antenna directivity) can change. This can alter the RF properties (e.g., gain, directivity) of the device's antenna as if the antenna position had changed, even if the actual antenna position may remain the same. It is desirable that these effects be considered during loopback testing. While it is desirable that these measurements be insensitive to misalignment of the test equipment, it is also desirable that they be sensitive to any changes (actual or apparent) to the antenna itself.

[0120] Figure 12shows the coupling factor between the transmitting element 22 of the device under test 10 and the waveguide opening 60 corresponding to the transmitting element 22 in the test equipment 100, and the coupling factor between the receiving element 24 of the device under test 10 and the waveguide opening 60 corresponding to the receiving element 24 in the test equipment 100. In Figure 12 it is assumed that the lateral spacing between the waveguide openings 60 in the test equipment 100 is smaller than the lateral spacing between the transmitting element 22 and the receiving element 24, as described above with respect to Figure 10 stated.

[0121] In Figure 12 the positions Tx, Rx2 are considered as "nominal" positions and correspond to the positions Tx2, Rx2 in Figure 10 . Figure 12 Also shown are two example deviations from Tx, Rx2, namely Tx, Rx1 and Tx, Rx3. Tx, Rx1 and Tx, Rx3 each correspond to a change (actual or apparent) in the lateral spacing between the transmitting element 22 and the receiving element 24 of the semiconductor device 10. Specifically, in the case of Tx, Rx1, the lateral spacing between the transmitting element 22 and the receiving element 24 increases, while in the case of Tx, Rx3, the lateral spacing between the transmitting element 22 and the receiving element 24 decreases.

[0122] It can be seen that, compared with Tx2, Rx2, a slight increase in the distance (Tx, Rx3) results in worse coupling at the receiving element 24. Similarly, a slight decrease in the distance (Tx, Rx1) results in better coupling at the receiving element 24. Therefore, compared with the standard case Tx+Rx2, the changes in the total loopback emission factors Tx+Rx1, Tx+Rx3 are large in the example (Tx+Rx1>>Tx+Rx2; Tx+Rx3<<Tx+Rx2). Thus, it can be understood that although the lateral spacing between the waveguide openings of the test equipment 100 is intentionally different from the "nominal" spacing represented by Tx, Rx2, the test process is generally more sensitive to changes in the lateral spacing in the radiation elements of the device under test 10. Although it has been explained under the assumption that the lateral spacing of the waveguide openings 60 is intentionally smaller than the lateral spacing between the transmitting element 22 and the receiving element 24 of the device under test 10 (in accordance with Figure 10 ). It should be understood that for the lateral spacing of the waveguide openings 60, the test process is generally also more sensitive to changes in the lateral spacing in the radiation elements of the device under test 10, where the lateral spacing is intentionally larger than the lateral spacing between the transmitting element 22 and the receiving element 24 of the device under test 10 (in accordance with Figure 12 Figure 11 ).

[0123] ​Therefore, test apparatus and methods for testing semiconductor devices have been described. The semiconductor device includes an integrated circuit and a plurality of external radiating elements located on the surface of the device. Each external radiating element includes at least one emitting element and a receiving element. The test apparatus includes a plunger. The plunger includes a dielectric portion having a surface for placement against the surface of the device. The plunger also includes at least one waveguide. Each waveguide extends through the plunger to route electromagnetic radiation emitted by one of the emitting elements of the device to one of the receiving elements of the device. Each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element of the device. The dielectric portion is configured to provide a mating interface for electromagnetic coupling of the waveguide openings to the plurality of external radiating elements of the device.

[0124] Although specific embodiments of this disclosure have been described, it should be understood that many modifications / additions and / or substitutions may be made within the scope of the claims.

Claims

1. A test apparatus for testing semiconductor devices, characterized in that, The semiconductor device includes an integrated circuit and a plurality of external radiating elements located on the surface of the device, each radiating element including at least one emitting element and at least one receiving element. The test equipment includes: A plunger, the plunger comprising: The dielectric portion has a surface for placement against the surface of the device; and At least one waveguide, wherein each waveguide extends through the plunger to route electromagnetic radiation emitted by one of the emitting elements of the device to one of the receiving elements of the device, wherein each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element among the plurality of radiating elements located at the surface of the device. The dielectric portion is configured to provide a matching interface for the plurality of waveguide openings of the plunger to electromagnetically couple with the plurality of radiating elements of the device; At least one of the waveguides is configured to route electromagnetic radiation emitted by one of the transmitting elements of the device to a plurality of receiving elements of the device; wherein the waveguide includes: a first branch for transmitting the electromagnetic radiation emitted by the transmitting element; and at least two additional branches coupled to the first branch for routing the electromagnetic radiation to the plurality of receiving elements.

2. The testing equipment according to claim 1, characterized in that, The dielectric portion has a thickness measured between the plurality of radiating elements located on the surface of the device and the plurality of waveguide openings of the plunger, the thickness being substantially equal to λ / 2, where λ is the wavelength of the electromagnetic radiation in the dielectric portion.

3. The testing equipment according to claim 1 or claim 2, characterized in that, The dielectric portion includes a curved surface for coupling electromagnetic radiation emitted by a plurality of emitting elements of the device to openings in the plurality of waveguide openings.

4. The testing equipment according to claim 1 or 2, characterized in that, The dielectric portion is further configured to provide a seal to prevent airflow from passing through the radiating element of the semiconductor device and / or through the plurality of waveguide openings of the plunger during testing of the semiconductor device using the test equipment.

5. The testing equipment according to claim 1 or 2, characterized in that, Additionally, it includes an attenuation portion located in at least one of the waveguides of the plunger.

6. The testing equipment according to claim 1 or 2, characterized in that, The dielectric portion includes high-density polyethylene (HDPE), polycarbonate, or ceramic materials.

7. A device, characterized in that, Includes the test equipment and the semiconductor device as described in any of the preceding claims.

8. A method for testing a semiconductor device, characterized in that, The method includes: A semiconductor device is provided, the semiconductor device including an integrated circuit and a plurality of external radiating elements located on the surface of the device, the external radiating elements including at least one emitting element and at least one receiving element; Provide testing equipment, the testing equipment including: A plunger, the plunger comprising: The dielectric portion has a surface for placement against the surface of the device; and At least one waveguide, wherein each waveguide extends through the plunger to route electromagnetic radiation emitted by one of the emitting elements of the device to one of the receiving elements of the device, wherein each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element among the plurality of radiating elements located at the surface of the device. The dielectric portion is configured to provide a matching interface for the plurality of waveguide openings of the plunger to electromagnetically couple with the plurality of external radiating elements of the device; The surface of the dielectric portion of the plunger is placed against the surface of the device; and Electromagnetic radiation is emitted from at least one of the transmitting elements to at least one of the receiving elements via at least one waveguide of the plunger; At least one of the waveguides is configured to route electromagnetic radiation emitted by one of the transmitting elements of the device to a plurality of receiving elements of the device; wherein the waveguide includes: a first branch for transmitting the electromagnetic radiation emitted by the transmitting element; and at least two additional branches coupled to the first branch for routing the electromagnetic radiation to the plurality of receiving elements.

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