Method of operating a particle beam device, computer program product and particle beam device

Abstract

The present invention relates to a method for operating a particle beam device to image and / or analyze an object, a computer program product and a particle beam device for performing the method. The particle beam device is implemented as an electron beam device and / or an ion beam device, for example. The method comprises: generating a particle beam; focusing the particle beam on a scanning area of ​​the object, wherein the scanning area is implemented as a first zone; scanning the particle beam over a scanning field on the object, wherein, in the case of maximum deflection of the scanning device, the scanning field is implemented as a second zone, wherein the first zone of the scanning area and the second zone of the scanning field have a first overlapping area, and wherein the second zone of the scanning field has a second area that does not overlap with the first zone of the scanning area; and generating an image and / or performing an analysis using detection signals generated only due to first interacting particles and / or interacting radiation originating from the first overlapping area.

Description

Technical Field

[0001] The present invention relates to a method for operating a particle beam device for imaging and / or analyzing an object, a computer program product, and a particle beam device for performing the method. The particle beam device is implemented as an electron beam device and / or an ion beam device, for example. Background Art

[0002] Electron beam devices, in particular scanning electron microscopes (hereinafter also referred to as SEM) and / or transmission electron microscopes (hereinafter also referred to as TEM), are used to examine objects (specimens) to gain insights into properties and behavior under certain conditions.

[0003] In an SEM, an electron beam (hereinafter also referred to as a primary electron beam) is generated by a beam generator and focused onto the object to be inspected by a beam guidance system. The primary electron beam is guided in a scanning manner over the surface of the object to be inspected by a deflection device in the form of a scanning device. Here, the electrons of the primary electron beam interact with the object to be inspected. As a result of the interaction, in particular, electrons are emitted by the object (so-called secondary electrons) and electrons of the primary electron beam are backscattered (so-called backscattered electrons). The secondary electrons and the backscattered electrons are detected and used for image generation. In this way, an image representation of the object to be inspected is obtained.

[0004] In the case of TEM, a primary electron beam is also generated by a beam generator and is focused onto the object to be inspected by a beam guidance system. The primary electron beam passes through the object to be inspected. When the primary electron beam passes through the object to be inspected, the electrons of the primary electron beam interact with the material of the object to be inspected. The electrons that pass through the object to be inspected are imaged onto a fluorescent screen or a detector (such as a camera) by a system consisting of an objective lens and a projection unit. Here, imaging can also be performed in the scanning mode of the TEM. Typically, such a TEM is called an STEM. In addition, backscattered electrons at the object to be inspected and / or secondary electrons emitted by the object to be inspected can be detected by additional detectors in order to image the object to be inspected.

[0005] Furthermore, it is known from the prior art to use combined devices for inspecting objects, in which both electrons and ions can be directed onto the object to be inspected. For example, it is known to equip an SEM with an ion beam column. An ion beam generator arranged in the ion beam column generates ions for preparing the object (e.g., removing material from the object or applying material to the object) or for imaging. For this purpose, the ions are scanned over the object by a deflection device in the form of a scanning device. The SEM is used in particular for observing the preparation, but also for further inspection of prepared or unprepared objects.

[0006] It is known that due to the technical configuration of the objective and due to the technical configuration of the scanning device, the region of the object to be imaged and scanned with the particle beam is limited, in particular for the following reasons.

[0007] First, it is known that, in the case of the above-mentioned particle beam device, a circular lens is used as an objective lens, which focuses the particle beam on the object in such a way that a circular area of ​​the object is imaged. The circular area is basically a circular scanning area. If the area of ​​the object outside the aforementioned circular scanning area is imaged, undesirable large image aberrations may occur during the imaging of these areas of the object.

[0008] Secondly, the above-mentioned scanning device typically includes a first deflection device for deflecting in the x-direction and a second deflection device for deflecting in the y-direction. The first deflection device is driven by a first deflection amplifier unit with a first voltage or a first current. The second deflection device is driven by a second deflection amplifier unit with a second voltage or a second current. The area of ​​the object onto which the scanning device can direct the particle beam is referred to above and below as a scanning field. Due to their electronic design, the first and second deflection devices can provide a voltage or current with an amplitude within a maximum amplitude. This maximum amplitude enables the first and second deflection devices to maximally deflect the particle beam. Therefore, when a voltage or current with a maximum amplitude is fed, a maximum scanning field is obtained. Typically, the maximum scanning field has a square or rectangular shape. However, maximum scanning fields are also known, which provide a substantially circular maximum scanning field by a deflection device including electrostatic multipole units. However, a square or rectangular shape for the maximum scanning field is typically chosen to more easily represent an image of the object on a monitor or paper.

[0009] As mentioned above with respect to the objective lens, during the imaging of regions of the object that are arranged outside the circular maximum scanning area, undesirably large image aberrations occur. In order to avoid these image aberrations, it is known to select the maximum scanning field of the scanning device in such a way that it is completely contained within the maximum circular scanning area. This is done in Figure 1 The maximum scanning field 602 controlled by the scanning device is completely contained in the maximum circular scanning area 601 controlled by the objective lens. When generating an image and / or analyzing an object, the known prior art uses only detection signals that are generated by detecting interaction particles and / or interaction radiation generated by the interaction of the particle beam with the area of ​​the object located in the maximum scanning field 602. Even if the area of ​​the object located in the maximum circular scanning area 601 is not within the maximum scanning field 602, the detection signals are not generated by the particle beam. Figure 1 The image and / or analysis of the area within the shaded area exhibits little aberration, and the shaded area of ​​the maximum circular scan area 601 is not used to generate an image of the object and / or analyze the object. Therefore, information about the object is lost.

[0010] In order to avoid the above-mentioned problems, the deflection amplifier units of the scanning device can be dimensioned in such a way that it is possible to obtain a larger maximum scanning field 602A (in Figure 1 (shown in dashed lines in the image). The area of ​​the object within maximum circular scan area 601 will then be fully imaged and / or analyzed without relatively large aberrations. However, areas of the object outside maximum circular scan area 601 are represented or analyzed in a manner that exhibits aberrations. If the size and position of maximum circular scan area 601 are unknown, it is unknown which areas of the object being represented or analyzed exhibit or do not exhibit aberrations. This is undesirable.

[0011] With regard to the prior art, reference is made by way of example to US 8,304,750 A1. Summary of the Invention

[0012] The present invention is therefore based on the object of specifying a method for operating a particle beam device for imaging and / or analyzing an object, a computer program product, and a particle beam device for carrying out the method, with which a region of the object located within the maximum scanning range can be imaged or reliably analyzed.

[0013] According to the present invention, this object is achieved by a method having the characteristics described below. A computer program product comprising a program code for controlling a particle beam device for carrying out the method is provided below. In addition, a particle beam device for generating images and / or for analyzing objects is provided below. Further features of the present invention will become apparent from the following description, the appended claims and / or the accompanying drawings.

[0014] The method according to the present invention is designed to operate a particle beam device for imaging (that is, for generating an image) and / or analyzing an object. The particle beam device according to the present invention is embodied, for example, as an electron beam device and / or an ion beam device. The particle beam device according to the present invention is particularly useful for imaging, processing, and / or analyzing an object.

[0015] In the method according to the present invention, a particle beam comprising charged particles is generated by at least one beam generator. To this end, the particle beam apparatus comprises at least one beam generator for generating a particle beam comprising charged particles. The aforementioned particles are hereinafter also referred to as primary particles. For example, the primary particles are electrons or ions.

[0016] In addition, in the method according to the present invention, it is provided that the particle beam is focused onto a scanning area on the object by at least one objective lens. For this purpose, the particle beam device includes at least one objective lens for focusing the particle beam onto the object. Due to the optical embodiment of the objective lens, the scanning area is implemented as a first zone. The first zone can have any shape. For example, if the objective lens is implemented as a circular lens, the above-mentioned scanning area is also implemented as a circle. However, it should be clearly pointed out that the present invention is not limited to the circular shape of the first zone. Instead, any shape suitable for the present invention can be used in the method according to the present invention in the first zone. The maximum size and shape of the first zone of the scanning area, for example, depend on the adjusted magnification of the particle beam device. This will be discussed in more detail below.

[0017] Furthermore, in the method according to the present invention, a particle beam is scanned over a scanning field of an object by at least one scanning device. The area of ​​the object onto which the scanning device can direct the particle beam is referred to above and below as the scanning field. For example, the scanning device includes a first deflection device for deflecting the particle beam in the x-direction and a second deflection device for deflecting the particle beam in the y-direction. The first deflection device is driven, for example, by a first deflection amplifier unit with a first voltage. The second deflection device is driven, for example, by a second deflection amplifier unit with a second voltage. Due to their electronic design, the first deflection device and the second deflection device can provide a voltage, for example, up to a maximum amplitude of the voltage. The voltage with the maximum amplitude enables the first deflection device and the second deflection device to deflect the particle beam to the maximum extent. Therefore, when the voltage with the maximum amplitude is fed, a maximum scanning field is achieved. For example, the maximum scanning field has a square or rectangular shape. In another embodiment, the first deflection device is driven, for example, by a first deflection amplifier unit with a first current. The second deflection device is driven, for example, by a second deflection amplifier unit with a second current. Due to their electronic design, the first and second deflection devices can supply currents up to their maximum amplitude, for example. Currents with the maximum amplitude enable the first and second deflection devices to maximally deflect the particle beam. Therefore, when currents with the maximum amplitude are supplied, a maximum scanning field is achieved. For example, the maximum scanning field has a square or rectangular shape.

[0018] In the method according to the present invention, it is provided that, when the particle beam is maximally deflected by the scanning device, the scanning field is implemented as a second zone. The first zone of the scanning area and the second zone of the scanning field have a first overlapping area. In other words, the first zone of the scanning area and the second zone of the scanning field have a common area, namely the first overlapping area. In other words, the first overlapping area is the area common to the first zone of the scanning area and the second zone of the scanning field. The area of ​​the second zone of the scanning field that does not overlap with the first zone of the scanning field will also be referred to as the second non-overlapping area of ​​the second zone of the scanning field.

[0019] Method according to the present invention further relates to detecting interaction particles and / or interaction radiation by at least one detector.When particle beam is fed to object, the interaction of particle beam and object occurs.Interaction particles and / or interaction radiation are produced in the process.Interaction particles are, for example, secondary particles (particularly secondary electrons) and / or backscattered particles (for example backscattered electrons).For example, interaction radiation is x-ray radiation or cathode luminescence light.

[0020] Furthermore, the method according to the invention involves generating a detection signal by a detector, wherein the detection signal is generated due to the detected interacting particles and / or interacting radiation.

[0021] In the method according to the invention, there is also provided the generation of an image of the object and / or the analysis of the object, wherein, for this purpose, only those detection signals are used which are generated due to the detected interacting particles and / or interacting radiation originating from the first overlapping area. Thus, for the generation of the image and / or the analysis of the object, only the detection signals which are generated due to the interaction of the particle beam with an area of ​​the object comprising a first overlapping area of ​​the first zone of the scanning field and a second zone of the scanning field are used. When generating the image of the object and / or when analyzing the object, those detection signals which are generated due to the detected interacting particles and / or interacting radiation originating from a second non-overlapping area of ​​the second zone of the scanning field are not used, are masked out of the image of the object and / or are masked out of the displayed analysis of the object.

[0022] Furthermore, in the method according to the invention, provision is made for displaying the image of the object and / or the result of the analysis on a display device, for example a display device of a particle beam device.

[0023] Another method according to the present invention is also designed to operate a particle beam device for imaging (that is, for generating an image) and / or analyzing an object. The particle beam device according to the present invention is, for example, embodied as an electron beam device and / or an ion beam device. The particle beam device according to the present invention is particularly useful for imaging, processing, and / or analyzing an object.

[0024] In another method according to the present invention, a particle beam comprising charged particles is generated by at least one beam generator. To this end, the particle beam apparatus includes at least one beam generator for generating a particle beam comprising charged particles. The aforementioned particles are hereinafter referred to as primary particles. For example, the primary particles are electrons or ions.

[0025] In addition, in another method according to the present invention, a scanning area is provided for determining the object, wherein, due to the optical embodiment of the objective lens, the scanning area is implemented as a first zone, and wherein, utilizing the particle beam, the scanning area can be imaged and / or analyzed. The first zone can have any shape. For example, if the objective lens is implemented as a circular lens, the above-mentioned scanning area is also implemented as a circle. However, it should be clearly pointed out that the present invention is not limited to the circular shape of the first zone. Instead, any shape suitable for the present invention can be used in the method according to the present invention in the first zone. The maximum size and shape of the first zone of the scanning area, for example, depend on the adjusted magnification of the particle beam device. This will be discussed in more detail further below.

[0026] Furthermore, a further method according to the present invention provides for determining a scanning field of the object generated by the scanning device, wherein the scanning field is implemented as a second region at maximum deflection of the scanning device. For example, the scanning device is implemented as explained above. For example, the maximum scanning field has a square or rectangular shape.

[0027] In another method according to the present invention, it is provided that, when the particle beam is maximally deflected by the scanning device, the scanning field is implemented as a second zone. The first zone of the scanning area and the second zone of the scanning field have a first overlapping area. In other words, the first zone of the scanning area and the second zone of the scanning field have a common area, namely the first overlapping area. In other words, the first overlapping area is the area common to the first zone of the scanning area and the second zone of the scanning field. The area of ​​the second zone of the scanning field that does not overlap with the first zone of the scanning area is hereinafter referred to as the second non-overlapping area of ​​the second zone of the scanning field.

[0028] Furthermore, a further method according to the invention comprises focusing the particle beam only onto the first overlapping region and scanning the particle beam only over the first overlapping region.

[0029] Other method according to the present invention also relates to and detects interaction particle and / or interaction radiation by at least one detector.When particle beam is fed to the first overlapping region, particle beam interacts with the described part that is arranged at the first overlapping region place of object.Interaction particle and / or interaction radiation are produced in process.Interaction particle is for example secondary particle (particularly secondary electron) and / or backscattered particle (for example backscattered electron).For example, interaction radiation is x-ray radiation or cathode luminescence light.

[0030] Furthermore, a further method according to the invention relates to generating a detection signal by a detector, wherein the detection signal is generated due to the detected interacting particles and / or interacting radiation. In a further method according to the invention, there is also provided generating an image of the object and / or analyzing the object, wherein, for this purpose, those detection signals generated due to the detected interacting particles and / or interacting radiation originating from the first overlapping area are used.

[0031] Furthermore, in a further method according to the invention, provision is made for displaying the image of the object on a display device, for example a display device of the particle beam apparatus.

[0032] Even further methods according to the present invention are also designed to operate a particle beam device for imaging (that is, for generating an image) and / or analyzing an object. The particle beam device according to the present invention is, for example, embodied as an electron beam device and / or an ion beam device. The particle beam device according to the present invention is particularly useful for imaging, processing, and / or analyzing an object.

[0033] In an even further method according to the present invention, a particle beam comprising charged particles is generated by at least one beam generator. For this purpose, the particle beam device comprises at least one beam generator for generating a particle beam comprising charged particles. The aforementioned particles will hereinafter also be referred to as primary particles. For example, the primary particles are electrons or ions.

[0034] In addition, in an even further method according to the present invention, a particle beam is focused onto a scanning area on an object by at least one objective lens. For this purpose, the particle beam device includes at least one objective lens for focusing the particle beam onto the object. Due to the optical embodiment of the objective lens, the scanning area is implemented as a first zone. The first zone can have any shape. For example, if the objective lens is implemented as a circular lens, the above-mentioned scanning area is also implemented as a circle. However, it should be clearly pointed out that the present invention is not limited to the circular shape of the first zone. Instead, any shape suitable for the present invention can be used in the method according to the present invention. The maximum size and shape of the first zone of the scanning area, for example, depend on the adjusted magnification of the particle beam device. This will be discussed in further detail below.

[0035] Furthermore, in an even further method according to the invention, it is provided that the particle beam is scanned over a scanning field of the object by means of at least one scanning device. For example, the scanning device comprises a first deflection device for deflecting the particle beam in the x-direction and a second deflection device for deflecting the particle beam in the y-direction. With regard to an embodiment of the scanning device, reference is made to the further observations above, which also apply here.

[0036] In an even further method according to the present invention, it is provided that, when the particle beam is maximally deflected by the scanning device, the scanning field is implemented as a second zone. The first zone of the scanning area and the second zone of the scanning field have a first overlapping area. In other words, the first zone of the scanning area and the second zone of the scanning field have a common area, namely the first overlapping area. In other words, the first overlapping area is the area common to the first zone of the scanning area and the second zone of the scanning field. The area of ​​the second zone of the scanning field that does not overlap with the first zone of the scanning field will hereinafter also be referred to as the second non-overlapping area of ​​the second zone of the scanning field.

[0037] Even other method according to the present invention also relates to detecting interaction particles and / or interaction radiation by at least one detector.When particle beam is fed to object, the interaction of particle beam and object occurs.Interaction particles and / or interaction radiation are produced in the process.Interaction particles are, for example, secondary particles (particularly secondary electrons) and / or backscattered particles (for example backscattered electrons).For example, interaction radiation is x-ray radiation or cathode luminescence light.

[0038] Furthermore, an even further method according to the present invention involves generating a detection signal by a detector, wherein the detection signal is generated due to detected interacting particles and / or interacting radiation.

[0039] Even further methods according to the invention involve generating a first image of the object using detection signals generated due to detected interacting particles and / or interacting radiation originating from the first overlapping region. Furthermore, even further methods according to the invention involve generating a second image of the object using detection signals generated due to detected interacting particles and / or interacting radiation originating from a second non-overlapping region of a second zone of the scanning field.

[0040] In addition, in an even further method according to the present invention, a first image of the object is identified with a first identifier and / or a second image of the object is identified with a second identifier. In addition, the first image of the object identified with the first identifier and / or the second image identified with the second identifier are displayed on a display device (e.g., a display device of a particle beam device).

[0041] Specifically, there is provided the use of at least one first separation line (e.g., a circular line) extending along the outer boundary of the overlapping region as a first identifier. Additionally or alternatively, there is provided the use of at least one first color as a first identifier. In further embodiments, additionally or alternatively, there is provided the use of at least one second separation line (e.g., a circular line) extending along the outer boundary of the non-overlapping region as a second identifier. Additionally or alternatively, there is provided the use of at least one second color or an adjustable contrast of a second image as a second identifier.

[0042] Advantages and embodiments of the method according to the invention, of a further method according to the invention and of an even further method according to the invention are discussed below. When reference is made to all methods below, these are referred to below as methods according to the invention.

[0043] An advantage of the method according to the invention is that, when generating an image and / or when performing an analysis of an object, regions of the object that can only be imaged and / or analyzed with very pronounced aberrations are not taken into account or are identified in such a way that these regions are easily recognizable by a user. By means of the method according to the invention, after imaging, only regions of the object that exhibit only very slight aberrations are imaged and / or analyzed or taken into account.

[0044] In one embodiment of the method according to the present invention, additionally or alternatively, the first area of ​​the scanning region and the second area of ​​the scanning field are oriented in such a way that the first area of ​​the scanning region is completely arranged in the second area of ​​the scanning field. In other words, the second area of ​​the scanning field completely encompasses the first area of ​​the scanning region. In yet other words, the first area of ​​the scanning region is completely located in the second area of ​​the scanning field.

[0045] In a further embodiment of the method according to the invention, additionally or alternatively, a first region of the scanning area is selected in such a way that the first region has a first shape. Furthermore, additionally or alternatively, a second region of the scanning field is selected in such a way that the second region has a second shape, wherein the first shape is different from the second shape. For example, the first region of the scanning area is selected in such a way that the first region is embodied as a circle. Additionally or alternatively, the second region of the scanning field is selected in such a way that the second region is embodied as a polygon. For example, the second region of the scanning field is embodied as a square or a rectangle. However, it should be expressly pointed out that the present invention is not limited to a circular shape for the first region and / or a polygonal shape for the second region. Rather, any shape of the first region and / or the second region that is suitable for the present invention can be used in the method according to the invention.

[0046] In yet another embodiment of the method according to the present invention, additionally or alternatively, a mask is disposed over the second non-overlapping region of the second zone of the scanning field. The mask serves the purpose of utilizing detection signals generated by interacting particles and / or interacting radiation detected from the second non-overlapping region of the second zone of the scanning field when generating an image of the object and / or analyzing the object. For example, the mask can be a physical mask if the intended dimensions of such a physical mask are manufacturable. In another embodiment of the method according to the present invention, additionally or alternatively, the mask is implemented as an electronic mask. For example, the electronic mask is generated by image processing and / or data processing. For example, the image processing and / or data processing is used to mask out detection signals generated by interacting particles and / or interacting radiation detected from the second non-overlapping region of the second zone of the scanning field when generating an image of the object and / or analyzing the object, and thus prevents them from being displayed in the image of the object and / or when displaying the analysis results of the object. Electronic masks are particularly advantageous when physical masks cannot be easily produced due to their small size. In one embodiment of the method according to the invention, additionally or alternatively, a second non-overlapping area is provided so that the mask covers and masks the second area of ​​the scanning field. For example, a second non-overlapping area is provided so that the mask completely covers and masks the second area of ​​the scanning field.

[0047] In one embodiment of the method according to the invention, additionally or alternatively, it is provided that the first zone of the scanning area and the second zone of the scanning field are selected in such a way that the first zone and the second zone have a boundary area. At the boundary area, the first zone of the scanning area adjoins a second non-overlapping area of ​​the second zone of the scanning field. In order to specify which detection signals are used for generating an image of the object and / or for analyzing the object, at least one straight line is used in this embodiment of the method according to the invention. The straight line is, for example, a virtual straight line, which is used in image processing and / or data processing to identify areas of the object that are intended to be taken into account or not to be taken into account when generating an image of the object and / or when analyzing the object. In particular, it is provided that the straight line is oriented along the boundary area, wherein the first side of the straight line is oriented towards the first zone of the scanning area and wherein the second side of the straight line is oriented towards the second non-overlapping area of ​​the second zone of the scanning field. In the embodiment of the method according to the invention described here, it is provided that when generating an image of the object and / or when analyzing the object, detection signals originating from an area of ​​the object on the second side of the straight line are not used. In other words, when generating an image of the object and / or when analyzing the object,

[0048] Detection signals generated using detected interacting particles and / or interacting radiation originating from a second, non-overlapping region of a second zone of the scanning field, which is arranged on the second side of the straight line, are not used. The portion of the second zone of the scanning field that does not overlap with the first zone of the scanning field is arranged in the region of the object arranged on the second side of the straight line. In contrast, detection signals generated using detected interacting particles and / or interacting radiation originating from the region arranged on the first side of the straight line are used when generating an image of the object and / or when analyzing the object. This region includes at least the first zone of the scanning field.

[0049] In another embodiment of the method according to the present invention, additionally or alternatively, provide and carry out the method steps mentioned above during and / or after the magnification of adjusting particle beam device.In other words, for example, when adjusting the magnification of particle beam device or after having adjusted the magnification of particle beam device, carry out the method steps mentioned above and / or mentioned further below.For example, the magnification of particle beam device is changed from small magnification (1:1000) to large magnification (e.g., 1:500.000). This is achieved by reducing the amplitude of voltage and / or current in scanning equipment. In one embodiment of the method according to the present invention, additionally or alternatively, provide continuously adjusting magnification, wherein, the method steps mentioned above and / or mentioned further below are also carried out continuously. In another embodiment of the method according to the present invention, additionally or alternatively, provide and adjust magnification with discrete steps, wherein, the method steps mentioned above or mentioned further below are also carried out with discrete steps.For example, if use the mask mentioned above, then during adjusting magnification, the size of mask also changes according to the magnification after adjustment.

[0050] In one embodiment of the method according to the invention, additionally or alternatively, there is provided an indication of the execution of the method to a user of the particle beam apparatus by at least one signaling device. For example, the signaling device is an indicator light and / or a display on a display device of the particle beam apparatus. Thus, for example, the user is informed that when generating an image of the object and / or when analyzing the object, the detection signal generated due to the detected interacting particles or interacting radiation originating from the first overlapping region is used, whereas when generating an image of the object and / or when analyzing the object, the detection signal generated due to the detected interacting particles and / or interacting radiation originating from the second non-overlapping region of the second zone of the scanning field is not used.

[0051] In another embodiment of the method according to the invention, additionally or alternatively, it is provided that the above-mentioned image is a first image and the above-mentioned analysis is a first analysis. In this further embodiment of the method according to the invention, it is now provided that a second image of the object is generated using the detection signals and / or a second analysis of the object is performed. In this case, those detection signals generated due to the interaction of the particle beam with the object from the complete scan field are used. Therefore, in this embodiment, detection signals generated using detected interacting particles and / or interacting radiation originating from the first overlapping area are used. In addition, in this embodiment, detection signals generated using detected interacting particles and / or interacting radiation originating from a second non-overlapping area of ​​the second zone of the scan field are used. In addition, the first image and / or the second image are stored in a storage unit. Additionally or alternatively, it is provided that the first analysis and / or the second analysis are stored in a storage unit. The first image and the first analysis are therefore based on the interaction from the first overlapping area. In contrast, the second image and the second analysis are based on the interaction from the complete scan field.

[0052] In an even further embodiment of the method according to the invention, additionally or alternatively, provision is made for the scanning field to be shifted across the object by the scanning device. If, for example, the mask mentioned above is used in this even further embodiment of the method according to the invention, the mask is shifted along with the scanning field so that it is always the case that only detection signals originating from regions of the object exhibiting few aberrations are used to generate an image of the object and / or to analyze the object. This shifting of the scanning field can be achieved, for example, by a voltage offset at the output stage of a deflection amplifier unit of the scanning device (e.g., by adding a DC voltage signal for the shifting to an AC voltage signal for the scanning). The second region of the scanning field can have a size of, for example, 600 μm x 600 μm. For example, as described above, the shifting of the scanning field by the voltage offset is ±15 μm. With respect to the method according to the invention, in this case, the mask can be selected so that it simultaneously covers areas of the second region of the scanning field that are accessible to the particle beam due to the shifting of the scanning field and, therefore, are not represented in the generated image of the object and / or are not considered in the analysis of the object. As an alternative thereto, when generating an image of the object and / or when analyzing the object, a region of the first region of the scanning area that is reachable by the particle beam due to the displacement of the scanning field can be used.

[0053] The present invention further relates to a computer program product comprising a program code that can be loaded or loaded into a processor of a particle beam device, wherein, when the program code is executed in the processor, the program code controls the particle beam device in such a way that a method having at least one of the aforementioned or following features or a combination of at least two of the aforementioned or following features is performed.

[0054] The present invention also relates to a particle beam apparatus for imaging and / or analyzing an object. The particle beam apparatus according to the present invention includes at least one beam generator for generating a particle beam comprising charged particles. The charged particles are, for example, electrons or ions. The particle beam apparatus according to the present invention includes at least one objective lens for focusing the particle beam onto an object. Furthermore, the particle beam apparatus according to the present invention includes at least one scanning device for scanning the particle beam over the object. Furthermore, the particle beam apparatus according to the present invention includes at least one detector for detecting interacting particles and / or interacting radiation emitted from the interaction between the particle beam and the object when the particle beam is incident on the object. Furthermore, the particle beam apparatus according to the present invention is provided with at least one display device for displaying images and / or analysis results of the object. Furthermore, the particle beam apparatus according to the present invention includes a control unit comprising a processor in which a computer program product having at least one of the aforementioned or following features, or a combination of at least two of the aforementioned or following features, is loaded.

[0055] In one embodiment of the particle beam device according to the present invention, the beam generator is implemented as a first beam generator, and the particle beam is implemented as a first particle beam comprising first charged particles. Furthermore, the objective lens is implemented as a first objective lens for focusing the first particle beam onto an object. Furthermore, the particle beam device according to the present invention includes at least one second beam generator for generating a second particle beam comprising second charged particles. Furthermore, the particle beam device according to the present invention includes at least one second objective lens for focusing the second particle beam onto the object.

[0056] In particular, it is provided that the particle beam device is implemented as an electron beam device and / or an ion beam device. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] The following describes further practical embodiments and advantages of the present invention in conjunction with the accompanying drawings. In the drawings:

[0058] Figure 1 shows a schematic diagram of a scanning area and a scanning field according to the prior art;

[0059] Figure 2 shows a schematic representation of a particle beam apparatus;

[0060] Figure 3 shows a schematic representation of a further particle beam apparatus;

[0061] Figure 4 A schematic representation of an even further particle beam device is shown;

[0062] Figure 5 A schematic diagram of a scanning device of a particle beam apparatus is shown;

[0063] Figure 6 A flow chart showing an embodiment of a method according to the present invention is shown;

[0064] Figure 7 shows a schematic diagram of a scanning area and a scanning field according to the present invention;

[0065] Figure 8 shows a schematic illustration of a scanning region and a scanning field according to the present invention, wherein the imaging region is defined by straight lines;

[0066] Figure 9 A flow chart showing a further embodiment of the method according to the present invention;

[0067] Figure 10 a flow chart showing an even further embodiment of the method according to the invention;

[0068] Figure 11 shows further schematic illustrations of the scanning region and the scanning field;

[0069] Figure 12 Even further schematic illustrations of scanning areas and scanning fields are shown;

[0070] Figure 13 Still another schematic illustration showing a scanning region and a scanning field;

[0071] Figure 14 shows further schematic illustrations of the scanning region and the scanning field;

[0072] Figure 15 a flow chart showing yet another further embodiment of the method according to the present invention; and

[0073] Figure 16 A flow chart showing a further exemplary embodiment of the method according to the invention is shown. DETAILED DESCRIPTION

[0074] The invention will now be explained in more detail by a particle beam device in the form of an SEM and a combined device having an electron beam column and an ion beam column. Explicit mention is made of the fact that the invention can be used in any particle beam device, in particular any electron beam device and / or any ion beam device.

[0075] Figure 2A schematic diagram of a SEM 100 is shown. The SEM 100 includes a first beam generator in the form of an electron source 101, which is implemented as a cathode. Furthermore, the SEM 100 is provided with an extraction electrode 102 and an anode 103, which is placed at one end of a beam guide tube 104 of the SEM 100. By way of example, the electron source 101 is implemented as a thermal field emitter. However, the present invention is not limited to this type of electron source 101. Rather, any electron source may be utilized.

[0076] Electrons emitted from electron source 101 form a primary electron beam. These electrons are accelerated to the anode potential due to the potential difference between electron source 101 and anode 103. In the embodiment shown here, the anode potential is 100 V to 35 kV, for example, 5 kV to 15 kV, and particularly 8 kV, relative to the ground potential of the housing of sample chamber 120. Alternatively, however, the anode potential can also be at ground potential.

[0077] Two condenser lenses, in particular a first condenser lens 105 and a second condenser lens 106, are arranged on the beam guide tube 104. In this case, starting from the electron source 101, viewed in the direction of the first objective lens 107, the first condenser lens 105 is arranged first, followed by the second condenser lens 106. Explicit reference is made to the fact that further embodiments of the SEM 100 can have only a single condenser lens. A first aperture unit 108 is arranged between the anode 103 and the first condenser lens 105. Together with the anode 103 and the beam guide tube 104, the first aperture unit 108 is at a high voltage potential, in particular the potential of the anode 103, or is connected to ground. The first aperture unit 108 has a plurality of first apertures 108A, which are arranged at Figure 2 One of these is shown in FIG. For example, there are two first apertures 108A. Each of these multiple first apertures 108A has a different aperture diameter. An adjustment mechanism (not shown) allows the desired first aperture 108A to be positioned on the optical axis OA of the SEM 100. It is explicitly mentioned that in another embodiment, the first aperture unit 108 may include only a single first aperture 108A. In this embodiment, the adjustment mechanism may not be present. The first aperture unit 108 is then designed to be fixed. A fixed second aperture unit 109 is arranged between the first condenser lens 105 and the second condenser lens 106. Alternatively, a movable second aperture unit 109 is provided.

[0078] The first objective lens 107 has a pole shoe 110 in which a hole is formed. The beam guide tube 104 is guided through this hole. A coil 111 is arranged in the pole shoe 110.

[0079] The electrostatic delay device is arranged in the lower region of the beam guide tube 104. This comprises individual electrodes 112 and a tubular electrode 113. The tubular electrode 113 is arranged at the end of the beam guide tube 104 which faces the object 125 arranged on the movable object holder 114.

[0080] The tubular electrode 113 together with the beam guide tube 104 is at the potential of the anode 103, while the individual electrodes 112 and the object 125 are at a lower potential relative to the potential of the anode 103. In the present case, this is the ground potential of the housing of the sample chamber 120. In this way, the electrons of the primary electron beam can be decelerated to the desired energy required for examining the object 125.

[0081] The SEM 100 further includes a scanning device 115, by which the primary electron beam can be deflected and scanned over an object 125. Here, electrons of the primary electron beam interact with the object 125. Due to this interaction, interaction particles are generated, and these interaction particles are detected. Specifically, electrons are emitted from the surface of the object 125 (so-called secondary electrons), or electrons of the primary electron beam are backscattered as interaction particles (so-called backscattered electrons).

[0082] The object 125 and the individual electrodes 112 can also be at different potentials and at a potential different from ground. This allows the position of the delay of the primary electron beam relative to the object 125 to be set. For example, if the delay occurs very close to the object 125, imaging aberrations are reduced.

[0083] A detector arrangement comprising a first detector 116 and a second detector 117 is arranged in the beam guide tube 104 for detecting secondary electrons and / or backscattered electrons. In this arrangement, the first detector 116 is arranged on the source side along the optical axis OA, while the second detector 117 is arranged on the object side along the optical axis OA in the beam guide tube 104. The first detector 116 and the second detector 117 are arranged offset from each other in the direction of the optical axis OA of the SEM 100. Both the first detector 116 and the second detector 117 have corresponding passage openings through which the primary electron beam can pass. The first detector 116 and the second detector 117 are approximately at the potential of the anode 103 and the beam guide tube 104. The optical axis OA of the SEM 100 extends through the corresponding passage openings.

[0084] The second detector 117 is mainly used to detect secondary electrons. When emitted from the object 125, the secondary electrons initially have low kinetic energy and a random direction of motion. The secondary electrons are accelerated in the direction of the first objective lens 107 by a strong extraction field emitted from the tubular electrode 113. The secondary electrons enter the first objective lens 107 approximately in parallel. The beam diameter of the secondary electron beam is also kept small in the first objective lens 107. The first objective lens 107 then has a strong effect on the secondary electrons and generates a relatively short focus of the secondary electrons at a sufficiently steep angle relative to the optical axis OA, so that the secondary electrons diverge away from each other downstream of the focus and hit the second detector 117 on its effective area. In contrast, the second detector 117 detects only a small portion of the electrons backscattered at the object 125, that is, backscattered electrons with a relatively high kinetic energy compared to the secondary electrons emitted from the object 125. The high kinetic energy of the backscattered electrons when they emerge from the object 125 and the angle relative to the optical axis OA have the effect that the beam waist (i.e., the beam region with the smallest diameter) of the backscattered electrons is located near the second detector 117. Most of the backscattered electrons pass through the channel opening of the second detector 117. Therefore, the first detector 116 is essentially used to detect the backscattered electrons.

[0085] In another embodiment of the SEM 100, the first detector 116 can be further implemented with an inverse field grating 116A. The inverse field grating 116A is arranged on the side of the first detector 116 facing the object 125. The inverse field grating 116A has a negative potential relative to the potential of the beam guide tube 104, so that only backscattered electrons with high energy pass through the inverse field grating 116A to reach the first detector 116. Additionally or alternatively, the second detector 117 has another inverse field grating having a similar embodiment and having a similar function as the aforementioned inverse field grating 116A of the first detector 116.

[0086] Further, the SEM 100 has a chamber detector 119 in the sample chamber 120, such as an Everhart-Thornley detector or an ion detector, which has a detection surface that is coated with metal and blocks light.

[0087] The detection signals generated by the first detector 116 , the second detector 117 , and the chamber detector 119 are used to generate one or more images of the surface of the object 125 .

[0088] The following is explicitly mentioned: the apertures of first aperture unit 108 and second aperture unit 109, as well as the passage openings of first detector 116 and second detector 117, are shown in an exaggerated manner. The passage openings of first detector 116 and second detector 117 have an extension perpendicular to optical axis OA in the range of 0.5 mm to 5 mm. For example, these passage openings have an annular design and a diameter perpendicular to optical axis OA in the range of 1 mm to 3 mm.

[0089] The second aperture unit 109 is configured as a pinhole aperture in the embodiment shown here and is provided with a second aperture 118 for letting the primary electron beam through, which second aperture has an extension in the range of 5 μm to 500 μm, for example 35 μm. As an alternative thereto, it is provided in a further embodiment that the second aperture unit 109 is provided with a plurality of apertures which can be mechanically displaced relative to the primary electron beam or can be reached by the primary electron beam by using electric and / or magnetic deflection elements. The second aperture unit 109 is implemented as a pressure stage aperture. This separates a first area in which the electron source 101 is arranged and in which an ultrahigh vacuum (10 -7 hPa to 10 -12 hPa), the second region has a high vacuum (10 -3 hPa to 10 -7 hPa). The second region is the intermediate pressure region of the beam guide tube 104 , which leads to the sample chamber 120 .

[0090] The sample chamber 120 is in a vacuum state. In order to generate the vacuum, a pump (not shown) is arranged at the sample chamber 120. Figure 2 In the illustrated embodiment, the sample chamber 120 operates within a first pressure range or within a second pressure range. The first pressure range only includes pressures less than or equal to 10 -3 hPa, and the second pressure range only includes pressures greater than 10 -3 To ensure the pressure range, the sample chamber 120 is vacuum-tight.

[0091] The object holder 114 is arranged at the sample carrier 122. The sample carrier 122 is designed to be movable in three directions arranged perpendicular to each other, specifically the x-direction (first carrier axis), the y-direction (second carrier axis) and the z-direction (third carrier axis). In addition, the sample carrier 122 can rotate about two rotation axes arranged perpendicular to each other (carrier rotation axes). The present invention is not limited to the sample carrier 122 described above. Rather, the sample carrier 122 can have further translation axes and rotation axes along or around which the sample carrier 122 can move.

[0092] SEM 100 further includes a third detector 121 disposed in sample chamber 120. More precisely, third detector 121 is disposed downstream of sample carrier 122, as viewed from electron source 101 along optical axis OA. Sample carrier 122, and therefore object holder 114, can be rotated so that the primary electron beam can be radiated through object 125 disposed on object holder 114. When the primary electron beam passes through object 125 to be inspected, the electrons of the primary electron beam interact with the material of object 125 to be inspected. Third detector 121 detects the electrons that have passed through object 125 to be inspected.

[0093] A radiation detector 500 is arranged in the sample chamber 120 and is used to detect interaction radiation, such as x-ray radiation and / or cathodoluminescence light. The radiation detector 500, the first detector 116, the second detector 117, and the chamber detector 119 are connected to a control unit 123, which has a monitor 124. In the embodiment shown here, the monitor 124 is provided with an additional optical signal device 127, such as a red LED, and / or an additional acoustic signal device 128 that can emit a warning sound. The third detector 121 is also connected to the control unit 123. For the sake of clarity, it is not shown. The control unit 123 processes the detection signals generated by the first detector 116, the second detector 117, the chamber detector 119, the third detector 121, and / or the radiation detector 500 and displays the detection signals in the form of an image on the monitor 124.

[0094] The control unit 123 also has a database 126 in which data are stored and from which data are read.

[0095] The control unit 123 of the SEM 100 comprises a processor. Into the processor is loaded a computer program product comprising a program code which, when executed, performs the method for operating the SEM 100. This is explained in more detail below.

[0096] Figure 3 A particle beam device is shown in the form of a combined device 200. The combined device 200 has two particle beam columns. First, as already described Figure 2 As shown in FIG, the combined device 200 is provided with the SEM 100 but without the sample chamber 120. Instead, the SEM 100 is arranged in the sample chamber 201. The sample chamber 201 is in a vacuum. In order to generate the vacuum, a pump (not shown) is arranged at the sample chamber 201. Figure 3 In the embodiment shown, the sample chamber 201 operates within a first pressure range or within a second pressure range. The first pressure range only includes pressures less than or equal to 10 -3 hPa, and the second pressure range only includes pressures greater than 10 -3To ensure the pressure range, the sample chamber 201 is vacuum-tight.

[0097] Arranged in the sample chamber 201 is a chamber detector 119 , which is implemented, for example, in the form of an Everhart-Thornley detector or an ion detector and has a detection surface coated with a light-blocking metal. Further, a third detector 121 is arranged in the sample chamber 201 .

[0098] The SEM 100 is used to generate a first particle beam, in particular a primary electron beam as further described above, and has an optical axis as specified above, which is located at Figure 3 The ion beam device 300 is provided with the reference numeral 709 and is also referred to as the first beam axis in the following text. Figure 3 The second beam axis is provided with reference numeral 710 in FIG. 1 and is also referred to as the second beam axis in the following.

[0099] The SEM 100 is arranged vertically relative to the sample chamber 201. In contrast, the ion beam device 300 is arranged at an angle of approximately 0° to 90° relative to the SEM 100. Figure 3 , an arrangement of approximately 50° is shown by way of example. The ion beam device 300 includes a second beam generator in the form of an ion beam generator 301. The ion beam generator 301 generates ions that form a second particle beam in the form of an ion beam. These ions are accelerated by an extraction electrode 302 at a predeterminable potential. The second particle beam then passes through the ion optical unit of the ion beam device 300, wherein the ion optical unit includes a bunching lens 303 and a second objective lens 304. The second objective lens 304 ultimately generates an ion probe that is focused onto an object 125 arranged on an object holder 114. The object holder 114 is arranged at the sample carrier 122.

[0100] An adjustable or selectable aperture 306, a first electrode arrangement 307, and a second electrode arrangement 308 are arranged above the second objective lens 304 (i.e., in the direction of the ion beam generator 301), wherein the first electrode arrangement 307 and the second electrode arrangement 308 are implemented as scanning electrodes. The second particle beam is scanned over the surface of the object 125 by the first electrode arrangement 307 and the second electrode arrangement 308, wherein the first electrode arrangement 307 acts in a first direction and the second electrode arrangement 308 acts in a second direction, which is opposite to the first direction. Thus, for example, scanning is performed in the x-direction. Scanning in the perpendicular y-direction is performed by further electrodes (not shown) on the first electrode arrangement 307 and the second electrode arrangement 308, which are rotated by 90°.

[0101] As explained above, the object holder 114 is arranged at the sample carrier 122. Figure 3 In the illustrated embodiment, the sample stage 122 is also movable in three mutually perpendicular directions: the x-direction (first stage axis), the y-direction (second stage axis), and the z-direction (third stage axis). Furthermore, the sample stage 122 is rotatable about two mutually perpendicular rotation axes (stage rotation axes).

[0102] To better illustrate the individual units of the assembly 200, Figure 3 The distances between the individual units of the combined device 200 shown in FIG. 2 are shown in an exaggerated manner.

[0103] A radiation detector 500 is arranged in the sample chamber 201. The radiation detector is used to detect interaction radiation, such as x-rays and / or cathodoluminescence light. The radiation detector 500 is connected to a control unit 123, which includes a monitor 124. In the embodiment shown here, the monitor 124 is provided with an additional optical signaling device 127, such as a red LED, and / or an additional acoustic signaling device 128 that can emit a warning sound.

[0104] The control unit 123 processes the data generated by the first detector 116 and the second detector 117 ( Figure 2 ), the chamber detector 119, the third detector 121 and / or the radiation detector 500 generate detection signals, and display the detection signals on the monitor 124 in the form of images.

[0105] The control unit 123 also has a database 126 in which data are stored and from which data are read.

[0106] The control unit 123 of the combined device 200 comprises a processor. A computer program product comprising a program code is loaded into the processor, which program code, when executed, performs the method for operating the combined device 200. This is explained in more detail below.

[0107] Figure 4 4 is a schematic diagram of another embodiment of a particle beam device according to the present invention. This embodiment of a particle beam device is provided with reference numeral 400 and includes a reflector corrector for correcting, for example, chromatic aberration and / or spherical aberration. Particle beam device 400 includes a particle beam column 401, which is implemented as an electron beam column and substantially corresponds to the electron beam column of the SEM after correction. However, particle beam device 400 is not limited to the SEM with the reflector corrector. Instead, particle beam device can include any type of corrector unit.

[0108] Particle beam column 401 comprises a particle beam generator in the form of an electron source 402 (cathode), an extraction electrode 403 and an anode 404. For example, the electron source 402 is implemented as a thermal field emitter. The electrons emitted from the electron source 402 are accelerated to reach the anode 404 due to the potential difference between the electron source 402 and the anode 404. Therefore, a particle beam in the form of an electron beam is formed along the first optical axis OA1.

[0109] After the particle beam is emitted from the electron source 402, the particle beam is guided along a beam path corresponding to the first optical axis OA1. The first electrostatic lens 405, the second electrostatic lens 406 and the third electrostatic lens 407 are used to guide the particle beam.

[0110] In addition, a beam guiding device is used to arrange the particle beam along the beam path. The beam guiding device of this embodiment includes a source setting unit, which has two magnetic deflection units 408 arranged along the first optical axis OA1. In addition, the particle beam device 400 includes an electrostatic beam deflection unit. The first electrostatic beam deflection unit 409 (also implemented as a quadrupole in another embodiment) is arranged between the second electrostatic lens 406 and the third electrostatic lens 407. The first electrostatic beam deflection unit 409 is also arranged downstream of the magnetic deflection unit 408. The first multipole unit 409A in the form of the first magnetic deflection unit is arranged on one side of the first electrostatic beam deflection unit 409. In addition, the second multipole unit 409B in the form of the second magnetic deflection unit is arranged on the other side of the first electrostatic beam deflection unit 409. The first electrostatic beam deflection unit 409, the first multipole unit 409A and the second multipole unit 409B are arranged for arranging the particle beam relative to the axis of the third electrostatic lens 407 and the entrance window of the beam deflection device 410. The first electrostatic beam deflection unit 409 , the first multipole unit 409A and the second multipole unit 409B can interact like a Wien filter. A further magnetic deflection element 432 is arranged at the entrance of the beam deflection device 410 .

[0111] The beam deflection device 410 is used as a particle beam deflector for deflecting a particle beam in a specific manner. The beam deflection device 410 includes a plurality of magnetic sectors, specifically a first magnetic sector 411A, a second magnetic sector 411B, a third magnetic sector 411C, a fourth magnetic sector 411D, a fifth magnetic sector 411E, a sixth magnetic sector 411F, and a seventh magnetic sector 411G. A particle beam enters the beam deflection device 410 along a first optical axis OA1 and is deflected by the beam deflection device 410 in the direction of a second optical axis OA2. The beam deflection is performed at an angle of 30° to 120° by the first magnetic sector 411A, the second magnetic sector 411B, and the third magnetic sector 411C. The second optical axis OA2 is oriented at the same angle relative to the first optical axis OA1. The beam deflection device 410 also deflects the particle beam guided along the second optical axis OA2 precisely in the direction of the third optical axis OA3. The beam deflection is provided by the third magnetic sector 411C, the fourth magnetic sector 411D and the fifth magnetic sector 411E. Figure 4 In the embodiment of the present invention, with respect to the second optical axis OA2 and with respect to the deflection of the 3rd optical axis OA3, provide by making particle beam deflection 90 ° angle.Therefore, the 3rd optical axis OA3 extends coaxially with respect to the first optical axis OA1.Yet, mention the following fact: particle beam apparatus 400 according to the present invention described herein is not limited to 90 ° deflection angle.But, beam deflection device 410 can select any suitable deflection angle, for example 70 ° or 110 °, so that the first optical axis OA1 does not extend coaxially with respect to the 3rd optical axis OA3.About more details of beam deflection device 410, please refer to WO 2002 / 067286 A2.

[0112] After the particle beam has been deflected by the first magnetic sector 411A, the second magnetic sector 411B and the third magnetic sector 411C, the particle beam is guided along the second optical axis OA2. The particle beam is guided to the electrostatic mirror 414 and on its path to the electrostatic mirror 414, it travels along the fourth electrostatic lens 415, the third multipole unit 416A in the form of a magnetic deflection unit, the second electrostatic beam deflection unit 416, the third electrostatic beam deflection unit 417, and the fourth multipole unit 416B in the form of a magnetic deflection unit. The electrostatic mirror 414 includes a first mirror electrode 413A, a second mirror electrode 413B and a third mirror electrode 413C. The electrons of the particle beam reflected back at the electrostatic mirror 414 travel along the second optical axis OA2 again and reenter the beam deflection device 410. Then, these electrons are deflected to the third optical axis OA3 by the third magnetic sector 411C, the fourth magnetic sector 411D and the fifth magnetic sector 411E.

[0113] Electrons of the particle beam are emitted from the beam deflection device 410 and are directed along the third optical axis OA3 to an object 425 intended for inspection and disposed in the object holder 114. On the way to the object 425, the particle beam is directed to a fifth electrostatic lens 418, a beam guide tube 420, a fifth multipole unit 418A, a sixth multipole unit 418B, and an objective lens 421. The fifth electrostatic lens 418 is an electrostatic immersion lens. The particle beam is decelerated or accelerated by the fifth electrostatic lens 418 to the potential of the beam guide tube 420.

[0114] By objective lens 421, particle beam is focused into the focal plane that object 425 is arranged in. Object holder 114 is arranged at movable sample carrier 424. Movable sample carrier 424 is arranged in sample chamber 426 of particle beam device 400. Sample carrier 424 is implemented as movable in three directions arranged perpendicular to each other, specifically x direction (first carrier axis), y direction (second carrier axis) and z direction (third carrier axis). In addition, sample carrier 424 can rotate around two rotation axes arranged perpendicular to each other (carrier rotation axis).

[0115] The sample chamber 426 is in a vacuum state. In order to generate the vacuum, a pump (not shown) is arranged at the sample chamber 426. Figure 4 In the illustrated embodiment, the sample chamber 426 operates within a first pressure range or within a second pressure range. The first pressure range only includes pressures less than or equal to 10 -3 hPa, and the second pressure range only includes pressures greater than 10 -3 To ensure the pressure range, the sample chamber 426 is vacuum-tight.

[0116] Object lens 421 can be implemented as a combination of magnetic lens 422 and the sixth electrostatic lens 423. The end of beam guide tube 420 can further be an electrode of an electrostatic lens. After exiting from beam guide tube 420, the particles of the particle beam device are decelerated to the electric potential of object 425. Object lens 421 is not limited to the combination of magnetic lens 422 and the sixth electrostatic lens 423. Instead, object lens 421 can take any suitable form. For example, object lens 421 also can be implemented as a pure magnetic lens or a pure electrostatic lens.

[0117] The particle beam focused on object 425 interacts with object 425, generating interacting particles. Specifically, secondary electrons are emitted from object 425, or backscattered electrons are backscattered at object 425. The secondary electrons or backscattered electrons are accelerated again and guided along the third optical axis OA3 into beam guide tube 420. Specifically, the trajectories of the secondary electrons and backscattered electrons extend in the opposite direction of the particle beam along the beam path of the particle beam.

[0118] The particle beam apparatus 400 includes a first analytical detector 419, which is arranged along the beam path between the beam deflection device 410 and the objective lens 421. Secondary electrons traveling in a direction oriented at a large angle relative to the third optical axis OA3 are detected by the first analytical detector 419. Backscattered electrons and secondary electrons at a small axial distance relative to the third optical axis OA3 at the location of the first analytical detector 419, i.e., at a small distance from the third optical axis OA3 at the location of the first analytical detector 419, enter the beam deflection device 410 and are deflected by the fifth magnetic sector 411E, the sixth magnetic sector 411F, and the seventh magnetic sector 411G along the detection beam path 427 to the second analytical detector 428. By way of example, the deflection angle is 90° or 110°.

[0119] The first analyzing detector 419 generates a detection signal which is mainly generated by the emitted secondary electrons. The detection signal generated by the first analyzing detector 419 is directed to the control unit 123 and is used to obtain information about the characteristics of the interaction area between the focused particle beam and the object 425. Specifically, the focused particle beam is scanned over the object 425 using a scanning device 429. By means of the detection signal generated by the first analyzing detector 419, an image of the scanned area of ​​the object 425 can then be generated and displayed on a display unit. The display unit is, for example, a monitor 124 arranged at the control unit 123. In the embodiment shown here, the monitor 124 is provided with an additional light signal device 127, for example a red LED, and / or with an additional sound signal device 128 which can emit a warning sound.

[0120] The second analysis detector 428 is also connected to the control unit 123. The detection signal of the second analysis detector 428 is transmitted to the control unit 123 and used to generate an image of the scanned area of ​​the object 425 and display the image on the display unit. The display unit is, for example, the monitor 124 arranged at the control unit 123.

[0121] A radiation detector 500 is arranged in the sample chamber 426. The radiation detector is used to detect interaction radiation, such as x-ray radiation and / or cathodoluminescence light. The radiation detector 500 is connected to the control unit 123, which has a monitor 124. The control unit 123 processes the detection signals of the radiation detector 500 and displays these detection signals in the form of images on the monitor 124.

[0122] The control unit 123 also has a database 126 in which data are stored and from which data are read.

[0123] The control unit 123 of the particle beam device 400 comprises a processor. A computer program product comprising program code is loaded into the processor, which program code, when executed, performs the method for operating the particle beam device 400.

[0124] The following references Figure 2 The present invention is described in more detail with reference to the SEM 100. With respect to the combined device 200 and with respect to the particle beam device 400, the same details apply mutatis mutandis.

[0125] As will be outlined below, due to the technical configuration of the first objective 107 and due to the technical configuration of the scanning device 115 , the region of the object 125 to be imaged and scanned by the primary electron beam is limited.

[0126] The optical configuration of the first objective lens 107 causes a limitation on the area of ​​the object 125 to be imaged and scanned by the primary electron beam. The primary electron beam is focused onto the object 125 using the first objective lens 107. In this case, the primary electron beam is focused onto the scanning area of ​​the object 125. Due to the optical embodiment of the first objective lens 107, the scanning area is implemented as a first zone. The first zone, in particular the shape and size of the zone, depends on the optical settings of the first objective lens 107 and (as will also be explained further below) on the configuration and embodiment of the scanning device 115. The first zone can have any shape. For example, if the first objective lens 107 is implemented as a circular lens, the aforementioned scanning area is also implemented as a circle. However, it should be clearly pointed out that the present invention is not limited to the circular shape of the first zone. Instead, any shape of the first zone suitable for the present invention can be used in the method according to the present invention.

[0127] The region of the object 125 to be imaged and scanned by the primary electron beam is limited by the scanning device 115 of the SEM 100 . Figure 5 Shown according to Figure 2 Schematic diagram of the scanning device 115 of the SEM 100. Figure 3 The scanning device in the form of the electrode arrangement 307, 308 of the combined device 200 and the scanning device according to Figure 4The scanning device 429 of the particle beam apparatus 400 has a configuration that is identical to or corresponds to the configuration of the scanning device 115 of the SEM 100. The scanning device 115 includes a first deflection device 800 and a second deflection device 801. The first deflection device 800 is used to deflect the primary electron beam in the x-direction, and the second deflection device 801 is used to deflect the primary electron beam in the y-direction. The first deflection device 800 is connected to a first deflection amplifier unit 802. The first deflection amplifier unit 802 provides a first voltage or a first current for driving the first deflection device 800. The second deflection device 801 is connected to a second deflection amplifier unit 803. The second deflection amplifier unit 803 provides a second voltage or a second current for driving the second deflection device 801.

[0128] Due to their electronic design, the first deflection device 800 and the second deflection device 801 can supply, for example, a voltage with a maximum voltage amplitude or a current with a maximum current amplitude. The voltage with the maximum amplitude or the current with the maximum current amplitude enables the first deflection device 800 and the second deflection device 801 to maximally deflect the primary electron beam of the SEM 100. Therefore, when the voltage with the maximum amplitude is supplied, a maximum scanning field is achieved. For example, the maximum scanning field has a square or rectangular shape. The maximum scanning field is implemented as the second region. By reducing the amplitude from the maximum amplitude to a smaller amplitude, a scanning field smaller than the maximum scanning field is achieved. Thus, the desired magnification of the object 125 can be adjusted in a targeted manner.

[0129] The first region of the scanning area has a first shape, such as the circular shape mentioned above. The second region of the scanning area has a second shape, such as the square or rectangular shape mentioned above. Thus, the first shape is different from the second shape. It should be noted again that the present invention is not limited to a circular shape for the first region and / or a square or rectangular shape for the second region. Rather, any shape of the first region and / or the second region that is suitable for the present invention can be used in the method according to the present invention.

[0130] Figure 6 An embodiment of the method according to the present invention is shown, wherein the method is Figure 2 The SEM 100 is implemented. In method step S1, a particle beam in the form of a primary electron beam is generated by the electron source 101. The particle beam in the form of a primary electron beam is then focused onto the object 125 by the first objective lens 107. Furthermore, the scanning device 115 is adjusted in such a way that the first deflection device 800 and the second deflection device 801 provide a voltage with a maximum amplitude or a current with a maximum amplitude, so that a maximum scanning field is obtained (method step S2).

[0131] Then, the maximum scanning area selected due to the adjustment of the first objective lens 107 is aligned with the maximum scanning field, as shown in FIG. Figure 7 What is shown. Figure 7 Shown according to Figure 2 Schematic illustration of a scanning region 601 and a scanning field 602 of an SEM 100. A first region of scanning region 601 and a second region of scanning field 602 are aligned in such a way that the first region of scanning region 601 is completely within the second region of scanning field 602. In other words, the second region of scanning field 602 completely encompasses the first region of scanning region 601. In yet other words, the first region of scanning region 601 is completely within the second region of scanning field 602.

[0132] The first area of ​​the scanning area 601 and the second area of ​​the scanning field 602 have a first overlapping area 603. In other words, the first area of ​​the scanning area 601 and the second area of ​​the scanning field 602 have a common area, namely the first overlapping area 603. Figure 7 In the illustrated embodiment, the common area, namely the first overlapping area 603, corresponds to the first region of the scanning area 601. Figure 7 6. The second non-overlapping region 604 of the second zone of the scanning field 602 is shown in a shaded manner in FIG. Therefore, the shaded region, ie, the non-overlapping region 604 of the second zone of the scanning field 602, is an area that has no intersection with the first zone of the scanning field 601.

[0133] like Figure 6 As shown, method step S3 involves detecting interacting particles, for example in the form of secondary electrons and / or backscattered electrons, by at least one of the following detectors:

[0134] First detector 116, second detector 117, third detector 121 and chamber detector 119. Additionally or alternatively, the method involves detecting interaction radiation in the form of x-rays and / or cathodoluminescent light by radiation detector 500. In detecting the interacting particles and / or the interacting radiation, the aforementioned detectors generate detection signals (according to Figure 6 Method step S4).

[0135] Then, method step S5 involves generating an image of object 125 and / or analyzing object 125 using the primary electron beam. For this purpose, only those detection signals generated due to detected interacting particles and / or interacting radiation originating from first overlap region 603 are used. Thus, detection signals generated due to the interaction of the primary electron beam with the region of object 125 comprising first overlap region 603 of the first and second regions are used to generate the image and / or to analyze object 125. Detection signals generated due to detected interacting particles and / or interacting radiation originating from second non-overlap region 604 of the second region of scan field 602 are not used and / or are masked out when generating the image of object 125 and / or when analyzing object 125. Then, method step S6 involves displaying the generated image and / or the analysis results of object 125 on monitor 124 of SEM 100.

[0136] In order that detection signals generated due to detected interacting particles and / or interacting radiation originating from the second non-overlapping region 604 of the second zone of the scanning field 602 are not used and / or masked out when generating an image of the object 125 and / or when analyzing the object 125, an embodiment of the method according to the invention provides that a mask is arranged over the second non-overlapping region 604 of the second zone of the scanning field 602. This is for example done according to Figure 6 The mask is completed in method step S5. The mask serves the purpose of not using detection signals generated by detected interacting particles and / or interacting radiation originating from the second non-overlapping region 604 when generating an image of the object 125 and / or when analyzing the object 125. The mask can, for example, be a physical mask. Alternatively, it is provided that the mask is implemented as an electronic mask. For example, the electronic mask is generated by image processing and / or data processing. For example, it is provided that the control unit 123, through image processing and / or data processing, masks out detection signals generated by detected interacting particles and / or interacting radiation originating from the second non-overlapping region 604 of the scanning field 602 when generating an image of the object 125 and / or when analyzing the object 125, and thus does not contribute to generating an image of the object 125 and / or analyzing the object 125. An electronic mask is particularly advantageous when a physical mask cannot be easily produced due to its small size. Specifically, the method according to the present invention provides for the mask to cover and mask the second non-overlapping region 604 of the second region of the scanning field 602. For example, a second non-overlapping region 604 is provided such that the mask completely covers and masks a second region of the scan field 602 .

[0137] In order that the detection signals generated due to the detected interacting particles and / or interacting radiation originating from the second non-overlapping region 604 of the second region of the scanning field 602 are not used and / or masked out when generating an image of the object 125 and / or when analyzing the object 125, a further embodiment of the method according to the invention provides in method step S5 that the first region of the scanning region 601 and the second region of the scanning field 602 are selected in such a way that the first region and the second region have a border region. Figure 8 This is schematically shown in . Figure 8 based on Figure 7 The same components are provided with the same reference numerals. Figure 8 In , the boundary area is given by the outer shape of the first zone of the scanning area 601. Figure 8 The outer shape of the scanning area 601 in FIG. 6 is implemented as a ring (ie, a circle).

[0138] In the border region, the first zone of the scanning area 601 adjoins a second non-overlapping region 604 of the second zone of the scanning field 602. In order to define which detection signals are used for generating an image of the object 125 and / or analyzing the object 125, at least one straight line is used in this embodiment of the method according to the invention. The straight line is, for example, a virtual straight line used during image processing and / or data processing in the control unit 123. Figure 8In the illustrated embodiment, four straight lines are aligned along the boundary region: a first straight line 605, a second straight line 606, a third straight line 607, and a fourth straight line 608. Each of the four straight lines 605-608 has a first side oriented toward the first region of the scanning area 601 and a second side oriented toward the non-overlapping region 604 of the second region of the scanning field 602. The embodiments of the method according to the present invention described herein provide for not utilizing detection signals generated using detected interacting particles and / or interacting radiation originating from the second non-overlapping region 604 when generating an image of the object 125 and / or when analyzing the object 125. Therefore, the interacting particles and / or interacting radiation originate from the second non-overlapping region 604, which is arranged on the second side of the straight lines 605-608. These are not considered when generating an image of the object 125 and / or when analyzing the object 125. In contrast, detection signals generated using detected interacting particles and / or interacting radiation originating from the first overlapping region 603 are utilized when generating an image of the object 125 and / or when analyzing the object 125. First overlapping region 603 is arranged on a first side of straight lines 605 to 608. The embodiments described herein can be summarized as follows: when generating an image of object 125 and / or when analyzing object 125, detection signals generated based on interacting particles and / or interacting radiation originating from a region on a first side of straight lines 605 to 608 are used. In contrast, when generating an image of object 125 and / or when analyzing object 125, detection signals generated based on interacting particles and / or interacting radiation originating from a region on a second side of straight lines 605 to 608 are not used. The number of straight lines is not limited to four. Rather, any desired number of straight lines may be used.

[0139] Figure 9 A further embodiment of the method according to the invention is shown, which is performed according to Figure 2 SEM 100 is implemented. Figure 9 An embodiment of the method according to the invention is based on Figure 6 According to an embodiment of the method of the present invention. Figure 9An embodiment of the method according to the present invention includes an additional step S1A, which is performed, for example, between method steps S1 and S2. Alternatively, method step S1A is performed before method step S1 and / or after method step S5. As yet another alternative, method step S1A is performed while method steps S1 to S5 are being performed. In method step S1A, the magnification of SEM 100 is adjusted. For example, the magnification of SEM 100 is changed from a low magnification (1:1000) to a high magnification (e.g., 1:500.000). In one embodiment of the method according to the present invention, additionally or alternatively, continuous adjustment of the magnification of SEM 100 is provided, wherein the method steps mentioned above and / or further below are also performed continuously. In yet another embodiment of the method according to the present invention, additionally or alternatively, the magnification of SEM 100 is adjusted in discrete steps, wherein the method steps mentioned above or further below are also performed in discrete steps. For example, if the above-mentioned mask is used, during adjustment of the magnification of the SEM 100 , the size of the mask also changes according to the adjusted magnification.

[0140] As mentioned above, the monitor 124 of the SEM 100 is provided with an additional optical signaling device 127, such as a red LED, and / or with an additional acoustic signaling device 128 which can emit a warning sound. In one embodiment of the method according to the invention, additionally or alternatively, provision is made for indicating the execution of the method according to the invention to the user of the SEM 100 by means of the optical signaling device 127 and / or the acoustic signaling device 128. This is for example Figure 6 Therefore, the user is informed that the detection signals generated due to the detected interacting particles and / or interacting radiation originating from the first overlapping region 603 are used when generating an image of the object 125 and / or when analyzing the object 125, while the detection signals generated due to the detected interacting particles and / or interacting radiation originating from the second non-overlapping region 604 are not used when generating an image of the object 125 and / or when analyzing the object 125.

[0141] As mentioned above, the control unit 123 of the SEM 100 has a database 126 in which data is stored and read out. Figure 10 The further exemplary embodiment of the method according to the invention presented uses a database 126 . Figure 10 A further embodiment of the method according to the invention is shown, which is performed according to Figure 2 SEM 100 is implemented. Figure 10 An embodiment of the method according to the invention is based on Figure 6 According to an embodiment of the method of the present invention. Figure 10The embodiment of the method according to the invention has additional method steps S7 and S8, which are performed, for example, after method step S5. The image generated in method step S5 is the first image of object 125. Furthermore, the analysis of object 125 generated in method step S5 is the first analysis of object 125. Figure 10 In an embodiment of the method according to the present invention, provision is made for generating a second image of object 125 and / or performing a second analysis of object 125 (method step S7). Detection signals generated due to interactions from the entire scanning field 602 are used to generate the second image of object 125 or to perform the second analysis of object 125. Thus, detection signals generated using detected interacting particles and / or interacting radiation originating from the first overlapping region 603 are used. Furthermore, detection signals generated using detected interacting particles and / or interacting radiation originating from the second non-overlapping region 604 of the second zone of scanning field 602 are used. Method step S8 then involves storing the first image and / or the second image in database 126. Additionally or alternatively, provision is made for storing the results of the first analysis and / or the second analysis in database 126. The first image and / or the first analysis are thus based on interactions from the first overlapping region 603. In contrast, the second image and / or the second analysis are based on both interactions from the first overlapping region 603 and interactions from the second non-overlapping region 604.

[0142] In an even further embodiment of the method according to the invention, additionally or alternatively, provision is made for the scanning field 602 to be shifted 125 over the object by the scanning device 115. If, for example, the above-mentioned mask is used in this even further embodiment of the method according to the invention, the mask is shifted together with the scanning field 602, so that it is always the case that only detection signals originating from regions of the object 125 that exhibit few aberrations are used to generate an image of the object 125 and / or for analyzing the object 125. Such a shift of the scanning field 602 can be achieved, for example, by a voltage or current offset at the output stages of the first deflection amplifier unit 802 and / or the second deflection amplifier unit 803 of the scanning device 115.

[0143] Figure 11 A further schematic illustration of a scanning region 601 and a scanning field 602 is shown, on the basis of which further embodiments of the method according to the invention are explained. The magnification of the SEM 100 is adjusted in such a way that the maximum scanning region 601 is only partially covered by the scanning field 602. A first region of the scanning region 601 and a second region of the scanning field 602 have a Figure 11603 is shown shaded in FIG. First region 604A of scan field 602, second region 604B of scan field 602, third region 604C of scan field 602, and fourth region 604D of scan field 602 do not overlap with scan region 601. Thus, first region 604A of scan field 602, second region 604B of scan field 602, third region 604C of scan field 602, and fourth region 604D of scan field 602 are non-overlapping regions of the second region of scan field 602. When generating an image of object 125, only those detection signals generated due to detected interacting particles and / or interacting radiation originating from first overlap region 603 are used. Thus, detection signals generated due to the interaction of the primary electron beam with the region of object 125, including first overlap region 603 of the first and second regions, are used to generate an image and / or analyze object 125. Detection signals generated due to detected interacting particles and / or interacting radiation originating from second non-overlapping regions 604A through 604D of the second zone of scan field 602 are not used and / or masked out when generating an image of object 125 and / or when analyzing object 125. Furthermore, first region 601A and second region 601B of scan area 601 are not considered during image generation because, due to the configuration of scanning device 115, the primary electron beam does not reach first region 601A and second region 601B of scan area 601.

[0144] As explained above, one embodiment of the method according to the invention provides for the scanning field 602 to be displaced on the object 125 by the scanning device 115. Figure 11 Compared with the embodiment, Figure 12 The displaced scanning field 602 is shown. Here, the magnification of the SEM 100 is also adjusted in such a way that the maximum scanning area 601 is only partially covered by the scanning field 602. The first region of the scanning area 601 and the second region of the scanning field 602 have a Figure 126. Scan field 602 includes scanning region 601, which is shown as a shaded first overlap region 603. First region 604A and second region 604B of scanning field 602 do not overlap scanning region 601. Thus, first region 604A and second region 604B of scanning field 602 are non-overlapping regions of the second region of scanning field 602. When generating an image of object 125, only detection signals generated due to detected interacting particles and / or interacting radiation originating from first overlap region 603 are used. Therefore, detection signals generated due to the interaction of the primary electron beam with the region of object 125, including first overlap region 603 of the first and second regions, are used to generate an image and / or analyze object 125. Detection signals generated due to detected interacting particles and / or interacting radiation originating from second non-overlapping regions 604A and 604B of the second region of scanning field 602 are not used and / or are masked out when generating an image of object 125 and / or when analyzing object 125. Furthermore, the first and second regions 601A and 601B of the scanning area 601 are not considered during image generation because the primary electron beam does not reach the first and second regions 601A and 601B of the scanning area 601 due to the configuration of the scanning device 115 .

[0145] Figure 13 An even further schematic illustration of a scanning region 601 and a scanning field 602 is shown, on the basis of which further embodiments of the method according to the invention are explained. Figure 13 based on Figure 7 First, reference is made to the explanations given above, which also apply here. Figure 13 The monitor 124 is shown as a rectangle. The monitor 124 has a display area 124A. The image of the object 125 is then intended to be displayed on the display area 124A. As described above, this embodiment provides for the first area of ​​the scanning area 601 and the scanning field 602 to be displayed on the display area 124A. Figure 13 The second area embodied as a square in the scanning field 602 is aligned in such a way that the first area of ​​the scanning area 601 is completely located in the second area of ​​the scanning field 602. The first area of ​​the scanning area 601 and the second area of ​​the scanning field 602 have a first overlapping area 603. Figure 13 In the illustrated embodiment, the common area, namely the first overlapping area 603, corresponds to the first region of the scanning area 601. Figure 13604 of the second zone of scanning field 602 is shown shaded. Thus, the shaded area, i.e., the non-overlapping area 604 of the second zone of scanning field 602, is an area that has no intersection with the first zone of scanning field 601. When generating an image of object 125, only those detection signals generated due to detected interacting particles and / or interacting radiation originating from the first overlapping area 603 are used. Thus, detection signals generated due to the interaction of the primary electron beam with the area of ​​object 125 comprising the first overlapping area 603 of the first and second zones are used to generate an image of object 125. Detection signals generated due to detected interacting particles and / or interacting radiation originating from the second non-overlapping area 604 of the second zone of scanning field 602 are not used and / or are masked out when generating an image of object 125. Furthermore, portions of display area 124A of monitor 124 that do not display any area of ​​the image of object 125 are contrasted in color such that only those portions of display area 124A of monitor 124 that display the image of object 125 are discernible. For example, a partial area of ​​the display area 124A of the monitor 124 where no area of ​​the image of the object 125 is shown is displayed in black.

[0146] Figure 14 An even further schematic illustration of a scanning region 601 and a scanning field 602 is shown, on the basis of which further embodiments of the method according to the invention are explained. Figure 14 based on Figure 13 First, reference is made to the explanations given above, which also apply here. Figure 14 A monitor 124 is shown which is implemented as a rectangle. The monitor 124 again has a display area 124A. The image of the object 125 is then intended to be displayed on said display area 124A. Figure 13 Compared with the embodiment, Figure 14 The embodiment in provides that the scanning field 602 is determined by the scanning device implemented as an electrostatic octupole unit. The second area of ​​the scanning field 602 is implemented as an octagon. In this embodiment, it is also provided that the first area of ​​the scanning area 601 is completely located in the second area of ​​the scanning field 602. The first area of ​​the scanning area 601 and the second area of ​​the scanning field 602 have a first overlapping area 603. Figure 14 In the illustrated embodiment, the common area, namely the first overlapping area 603, corresponds to the first region of the scanning area 601. Figure 14601 , a second non-overlapping region 604 of the second zone of scanning field 602 is shown shaded. Thus, the shaded region, i.e., the non-overlapping region 604 of the second zone of scanning field 602, is an area that has no intersection with the first zone of scanning field 601. When generating an image of object 125, only those detection signals generated due to detected interacting particles and / or interacting radiation originating from the first overlapping region 603 are used. Thus, detection signals generated due to the interaction of the primary electron beam with the region of object 125 comprising the first overlapping region 603 of the first and second zones are used to generate an image of object 125. Detection signals generated due to detected interacting particles and / or interacting radiation originating from the second non-overlapping region 604 of the second zone of scanning field 602 are not used and / or are masked out when generating an image of object 125. Furthermore, portions of display area 124A of monitor 124 that do not display any area of ​​the image of object 125 are contrasted in color such that only those portions of display area 124A of monitor 124 that display the image of object 125 are discernible. For example, a partial area of ​​the display area 124A of the monitor 124 where no area of ​​the image of the object 125 is shown is displayed in black.

[0147] Figure 15 An embodiment of the method according to the present invention is shown, wherein the method is Figure 2 In method step S1C, a particle beam in the form of a primary electron beam is generated by the electron source 101. Furthermore, a further method step S2C involves determining a maximum scanning area 601 selected due to the adjustment of the first objective lens 107, said area being Figure 7 Furthermore, a maximum scan field 602 generated by the adjustment of the scanning device 115 is determined, said field being Figure 7 The maximum scanning area 601 selected by adjusting the first objective lens 107 is aligned with the maximum scanning field 602, as shown in FIG. Figure 7 As shown, the first area of ​​the scanning area 601 is completely located in the second area of ​​the scanning field 602. The first area of ​​the scanning area 601 and the second area of ​​the scanning field 602 have a first overlapping area 603. Figure 7 6. The second non-overlapping region 604 of the second zone of the scanning field 602 is shown in a shaded manner in FIG. Therefore, the shaded region, ie, the non-overlapping region 604 of the second zone of the scanning field 602, is an area that has no intersection with the first zone of the scanning field 601.

[0148] Then, method step S4C involves focusing the primary electron beam onto the first primary electron beam overlap region 603, and method step S5C involves scanning the primary electron beam over the first overlap region 603. Then, method step S6C involves detecting interacting particles, for example, in the form of secondary electrons and / or backscattered electrons, by at least one of the following detectors: first detector 116, second detector 117, third detector 121, and chamber detector 119. Additionally or alternatively, the method involves detecting interacting radiation in the form of x-rays and / or cathodoluminescent light by radiation detector 500. In the process of detecting interacting particles and / or interacting radiation, the aforementioned detectors generate detection signals.

[0149] Then, method step S7C involves generating an image of object 125 and / or analyzing object 125 using the primary electron beam. For this purpose, only detection signals generated solely due to interacting particles and / or interacting radiation originating from first overlap region 603 are used. Thus, detection signals generated due to the interaction of the primary electron beam with the region of object 125, including first overlap region 603 of the first and second regions, are used to generate an image and / or to analyze object 125. Then, method step S8C involves displaying the image of object 125 and / or the analysis results of object 125 on monitor 124 of SEM 100.

[0150] Figure 16 A further embodiment of the method according to the invention is shown, which is performed according to Figure 2 The SEM 100 is used. In method step S1D, a particle beam in the form of a primary electron beam is generated by the electron source 101. Then, in method step S2D, the particle beam in the form of a primary electron beam is focused onto the object 125 by the first objective lens 107. Furthermore, the scanning device 115 is adjusted in such a way that the first deflection device 800 and the second deflection device 801 provide a voltage with a maximum amplitude or a current with a maximum amplitude, so that the maximum scanning field 602 is obtained.

[0151] Then the maximum scanning area 601 selected due to the adjustment of the first objective lens 107 is aligned with the maximum scanning field 602, as shown in FIG. Figure 7 As shown, the first region of the scan area 601 is entirely within the second region of the scan field 602 .

[0152] The first area of ​​the scanning area 601 and the second area of ​​the scanning field 602 have a first overlapping area 603. In other words, the first area of ​​the scanning area 601 and the second area of ​​the scanning field 602 have a common area, namely the first overlapping area 603. Figure 76. The second non-overlapping region 604 of the second zone of the scanning field 602 is shown in a shaded manner in FIG. Therefore, the shaded region, ie, the non-overlapping region 604 of the second zone of the scanning field 602, is an area that has no intersection with the first zone of the scanning field 601.

[0153] In method step S3D, the primary electron beam is scanned across the second region of scan field 602. Method step S4D involves detecting interacting particles, for example, in the form of secondary electrons and / or backscattered electrons, by at least one of the following detectors: first detector 116, second detector 117, third detector 121, and chamber detector 119. Additionally or alternatively, the method involves detecting interacting radiation in the form of x-rays and / or cathodoluminescent light by radiation detector 500. In the process of detecting interacting particles and / or interacting radiation, the aforementioned detectors generate detection signals.

[0154] Method step S5D then involves generating a first image of the object 125. For this purpose, only those detection signals are used that are generated due to detected interacting particles and / or interacting radiation originating from the first overlap region 603. Thus, the detection signals generated due to the interaction of the primary electron beam with the region of the object 125 comprising the first region and the first overlap region 603 of the second region are used to generate the first image and / or for analyzing the object 125.

[0155] Method step S6D then involves generating a second image of the object 125. For this purpose, only those detection signals generated due to detected interacting particles and / or interacting radiation originating from the second non-overlapping region 604 of the second zone of the scanning field 602 are used.

[0156] Method step S7D involves identifying the first image of the object 125 with the first identifier and / or identifying the second image of the object 125 with the second identifier. Figure 7 An annular separating line 609 is shown, which is assigned to both the first image and the second image. For example, it is provided that the separating line 609 is arranged along the outer boundary of the overlapping region 603. Additionally or alternatively, it is provided that at least one first color is used as the first identifier. In another embodiment, additionally or alternatively, it is provided that at least one second separating line (e.g., an annular line) extending along the outer boundary of the non-overlapping region 604 is used as the second identifier. Additionally or alternatively, it is provided that at least one second color or an adjustable contrast of the second image is used as the second identifier. Furthermore, method step S8D involves displaying the first image of the object 125 identified by the first identifier and / or the second image of the object 125 identified by the second identifier on the monitor 124.

[0157] An advantage of the method according to the invention is that, when generating an image and / or performing an analysis of object 125, regions of object 125 that can only be imaged and / or analyzed with very pronounced aberrations are not taken into account or are identified in such a way that these regions are easily recognizable by a user. By means of the method according to the invention, after imaging, only those regions of object 125 that exhibit only slight aberrations are imaged and / or analyzed or taken into account.

[0158] The features of the invention disclosed in this specification, the drawings, and the claims may be essential for realizing the invention in its various embodiments, either individually or in any combination. The invention is not limited to the embodiments described. Modifications may be made within the scope of the claims and taking into account the knowledge of a person skilled in the art.

[0159] List of Reference Numerals

[0160] 100 SEM

[0161] 101 Electron Source

[0162] 102 lead electrode

[0163] 103 Anode

[0164] 104 bundle guide tube

[0165] 105 First beam-forming lens

[0166] 106 Second beam-forming lens

[0167] 107 First Objective

[0168] 108 First aperture unit

[0169] 108A First Aperture

[0170] 109 Second aperture unit

[0171] 110 pole shoes

[0172] 111 Coil

[0173] 112 individual electrodes

[0174] 113 Tubular Electrode

[0175] 114 Object Holder

[0176] 115 Scanning Devices

[0177] 116 First Detector

[0178] 116A Opposite Field Grating

[0179] 117 Second Detector

[0180] 118 Second Aperture

[0181] 119 Room Detector

[0182] 120 Sample Room

[0183] 121 Third Detector

[0184] 122 Sample carrier

[0185] 123 Control unit with processor

[0186] 124 Monitor

[0187] 124A Monitor display area

[0188] 125 objects

[0189] 126 Database

[0190] 127 Optical signal equipment

[0191] 128 Sound signal equipment

[0192] 200 combination device

[0193] 201 Sample Room

[0194] 300 ion beam device

[0195] 301 Ion Beam Generator

[0196] 302 Extraction electrode in ion beam device

[0197] 303 Focusing lens

[0198] 304 Second Objective Lens

[0199] 306 Adjustable or selectable aperture

[0200] 307 First Electrode Arrangement

[0201] 308 Second Electrode Arrangement

[0202] 400 Particle beam device with corrector unit

[0203] 401 particle beam column

[0204] 402 electron source

[0205] 403 lead electrode

[0206] 404 anode

[0207] 405 First Electrostatic Lens

[0208] 406 Second Electrostatic Lens

[0209] 407 Third Electrostatic Lens

[0210] 408 Magnetic Deflection Unit

[0211] 409 First electrostatic beam deflection unit

[0212] 409A First Multipole Unit

[0213] 409B Second multipole unit

[0214] 410 Beam Deflection Equipment

[0215] 411A First magnetic sector

[0216] 411B Second magnetic sector

[0217] 411C Third magnetic sector

[0218] 411D Fourth magnetic sector

[0219] 411E Fifth magnetic sector

[0220] 411F Sixth magnetic sector

[0221] 411G seventh magnetic sector

[0222] 413A First reflector electrode

[0223] 413B Second reflector electrode

[0224] 413C Third reflector electrode

[0225] 414 Electrostatic Mirror

[0226] 415 Fourth Electrostatic Lens

[0227] 416 Second electrostatic beam deflection unit

[0228] 416A third multi-pole unit

[0229] 416B Fourth multipole unit

[0230] 417 Third Electrostatic Beam Deflection Unit

[0231] 418 Fifth Electrostatic Lens

[0232] 418A Fifth Multipole Unit

[0233] 418B Sixth multipole unit

[0234] 419 First Analytical Detector

[0235] 420 bundle guide tube

[0236] 421 objective lens

[0237] 422 Magnetic Lens

[0238] 423 Sixth Electrostatic Lens

[0239] 424 Sample stage

[0240] 425 objects

[0241] 426 Sample Room

[0242] 427 Detection beam path

[0243] 428 Secondary Analytical Detector

[0244] 429 Scanning Device

[0245] 432 Additional magnetic deflection elements

[0246] 500 Radiation Detector

[0247] 601 Scan Area

[0248] 601A The first area of ​​the scanning area

[0249] 601B The second area of ​​the scanning area

[0250] 602 Scan Field

[0251] 602A Additional scanning field

[0252] 603 First overlapping area

[0253] 604 The second non-overlapping area of ​​the scan field

[0254] 604A The first area of ​​the scanning field

[0255] 604B Second area of ​​the scanning field

[0256] 604C The third area of ​​the scanning field

[0257] 604D The fourth area of ​​the scanning field

[0258] 605 First Line

[0259] 606 Second Straight Line

[0260] 607 Third Straight Line

[0261] 608 Fourth Straight Line

[0262] 709 First Beam Axis

[0263] 710 Second beam axis

[0264] 800 First Deflection Device

[0265] 801 Second Deflection Device

[0266] 802 First deflection amplifier unit

[0267] 803 Second deflection amplifier unit

[0268] OA optical axis

[0269] OA1 first optical axis

[0270] OA2 Second Optical Axis

[0271] OA3 third optical axis

[0272] S1 to S8 method steps

[0273] S1A Methods

[0274] S1C to S8C method steps

[0275] S1D to S8D method steps

Claims

1. A method for operating a particle beam device (100, 200, 400) to image and / or analyze an object (125, 425), wherein: The method includes: - generating a particle beam comprising charged particles by means of at least one beam generator (101, 301, 402); - focusing the particle beam onto a scanning region (601) of the object (125, 425) by means of at least one objective lens (107, 304, 421), wherein the scanning region (601) is embodied as a first zone due to the optical embodiment of the objective lens (107, 304, 421); - scanning the particle beam over a scanning field (602) on the object (125, 425) by means of at least one scanning device (115, 307, 308, 429), wherein the scanning field (602) is located at a maximum deflection of the scanning device (115, 307, 308, 429). Implemented as a second zone, wherein the first zone of the scanning area (601) and the second zone of the scanning field (602) have a first overlapping area (603), and wherein the second zone of the scanning field (602) has a second non-overlapping area (604) that does not overlap with the first zone of the scanning area (601): - detecting interaction particles and / or interaction radiation generated by the interaction of the particle beam with the object (125, 425) by at least one detector (116, 117, 119, 121, 419, 428, 500); - generating a detection signal by the detector (116, 117, 119, 121, 419, 428, 500) due to the detected interacting particles and / or interacting radiation; - generating an image of the object (125, 425) and / or performing an analysis of the object (125, 425) using the detection signals generated only due to detected interacting particles and / or interacting radiation originating from the first overlap region (603); and - Displaying the image of the object (125, 425) and / or the analysis result of the object (125, 425) on the display device (124, 124A).

2. A method for operating a particle beam device (100, 200, 400) to image and / or analyze an object (125, 425), wherein: The method includes: - generating a particle beam comprising charged particles by means of at least one beam generator (101, 301, 402); - determining a scanning area (601) on the object (125, 425), wherein, due to the optical embodiment of the objective (107, 304, 421), the scanning area (601) is implemented as a first zone, and wherein, using the particle beam, the scanning area (601) can be imaged and / or can be analyzed; - determining a scanning field (602) of the object (125, 425) generated by a scanning device (115, 307, 308, 429), wherein, in the case of a maximum deflection of the scanning device (115, 307, 308, 429), the scanning field (602) is implemented as a second region, wherein the first region of the scanning region (601) and the second region of the scanning field (602) have a first overlapping region (603), and wherein the second region of the scanning field (602) has a second non-overlapping region (604) that does not overlap with the first region of the scanning region (601): - focusing the particle beam only onto the first overlapping region (603); - scanning the particle beam only over the first overlapping region (603); - detecting interaction particles and / or interaction radiation generated by the interaction of the particle beam with the object (125, 425) by at least one detector (116, 117, 119, 121, 419, 428, 500); - generating a detection signal by the detector (116, 117, 119, 121, 419, 428, 500) due to the detected interacting particles and / or interacting radiation; - generating an image of the object (125, 425) and / or performing an analysis of the object (125, 425) using the detection signals generated as a result of detected interacting particles and / or interacting radiation originating from the first overlap region (603); and - Displaying the image of the object (125, 425) and / or the analysis result of the object (125, 425) on the display device (124, 124A).

3. A method for operating a particle beam apparatus (100, 200, 400) to image an object (125, 425), wherein: The method includes: - generating a particle beam comprising charged particles by means of at least one beam generator (101, 301, 402); - focusing the particle beam onto a scanning region (601) of the object (125, 425) by means of at least one objective lens (107, 304, 421), wherein the scanning region (601) is embodied as a first zone due to the optical embodiment of the objective lens (107, 304, 421); - scanning the particle beam over a scanning field (602) of the object (125, 425) by means of at least one scanning device (115, 307, 308, 429), wherein, in the case of a maximum deflection of the scanning device (115, 307, 308, 429), the scanning field (602) is implemented as a second region, wherein a first region of the scanning region (601) and a second region of the scanning field (602) have a first overlapping region (603), and wherein the second region of the scanning field (602) has a second non-overlapping region (604) which does not overlap with the first region of the scanning region (601): - detecting interaction particles and / or interaction radiation generated by the interaction of the particle beam with the object (125, 425) by at least one detector (116, 117, 119, 121, 419, 428, 500); - generating a detection signal by the detector (116, 117, 119, 121, 419, 428, 500) due to the detected interacting particles and / or interacting radiation; - generating a first image of the object (125, 425) using the detection signals generated due to the detected interacting particles and / or interacting radiation originating from the first overlapping region (603); - generating a second image of the object (125, 425) using the detection signals generated as a result of detected interacting particles and / or interacting radiation originating from a second non-overlapping region (604) of the second zone of the scanning field (602); - identifying the first image of the object (125, 425) with a first identifier and / or identifying the second image with a second identifier; and - displaying a first image of the object (125, 425) identified with the first identifier and / or a second image of the object (125, 425) identified with the second identifier on a display device (124, 124A).

4. The method according to claim 3, wherein: The method comprises at least one of the following steps: (i) using at least one first separation line as a first identifier; (ii) using at least one first color as a first identifier; (iii) using at least one second separation line as a second identifier; (iv) using at least one second color as a second identifier.

5. The method according to claim 3, wherein: The adjustable contrast of the second image is used as a second identifier.

6. A method according to any one of the preceding claims, wherein: A first region of the scanning area (601) and a second region of the scanning field (602) are oriented in such a way that the first region of the scanning area (601) is completely located in the second region of the scanning field (602).

7. The method according to any one of claims 1 to 5, wherein: - selecting a first region of the scanning area (601) in such a way that the first region has a first shape, and wherein, - selecting a second region of the scanning field (602) in such a way that the second region of the scanning field (602) has a second shape, wherein the first shape is different from the second shape.

8. The method according to claim 7, wherein: The method includes at least one of the following features: - selecting a first region of the scanning area (601) in such a way that the first region is embodied as a circle; - A second region of the scanning field (602) is selected in such a way that it is embodied as a polygon.

9. The method according to claim 1, wherein: The mask is arranged over a second non-overlapping region (604) of the second zone of the scanning field (602) in such a manner that detection signals generated using detected interacting particles and / or interacting radiation originating from the second non-overlapping region (604) of the second zone of the scanning field (602) are not used when generating an image of the object (125, 425) and / or when performing an analysis of the object (125, 425).

10. The method according to claim 9, wherein: An electronic mask is used as the mask, wherein the electronic mask is generated by image processing.

11. The method according to claim 1, wherein: - selecting a first area of ​​the scanning area (601) and a second area of ​​the scanning field (602) in such a way that the first area and the second area have a border area that is adjacent to both the first area of ​​the scanning area (601) and the second non-overlapping area (604) of the second area of ​​the scanning field (602); - at least one straight line (605 to 608) is oriented along the border region, wherein a first side of the straight line (605 to 608) is oriented toward a first zone of the scanning area (601), and wherein a side of the straight line (605 to 608) is oriented toward a second non-overlapping region (604) of a second zone of the scanning field (602), and wherein, - when generating an image of the object (125, 425) and / or when analyzing the object (125, 425), these detection signals generated by using detected interacting particles and / or interacting radiation originating from a second non-overlapping area (604) of the second zone of the scanning field (602), which area is arranged on the second side of the straight line (605 to 608) are not used.

12. The method according to any one of claims 1 to 5, wherein: The above method steps are performed during and / or after adjusting the magnification of the particle beam device (100, 200, 400).

13. The method according to any one of claims 1 to 5, wherein: The execution of the method is indicated to a user of the particle beam arrangement (100, 200, 400) via at least one signaling device (127, 128).

14. The method according to claim 1, wherein: The image is a first image, wherein the analysis is a first analysis, wherein - generating a second image of the object (125, 425) and / or a second analysis of the object (125, 425) using the detection signals generated using the detected interacting particles and / or interacting radiation originating from the complete scan field (602); and - storing at least one of the following in a storage unit (126): (a) the first image and the second image; (b) The first analysis and the second analysis.

15. The method according to any one of claims 1 to 5, wherein: The scanning field (602) is displaced over the object (125, 425) by the scanning device (115, 307, 308, 429).

16. A computer program product comprising a program code which can be loaded into a processor (123) and which, when executed, controls a particle beam arrangement (100, 200, 400) in such a way that the method according to at least one of the preceding claims is carried out.

17. A particle beam device (100, 200, 400) for imaging and / or analyzing an object (125, 425), the particle beam device comprising - at least one beam generator (101, 301, 402) for generating a particle beam comprising charged particles; - at least one objective lens (107, 304, 421) for focusing the particle beam onto the object (125, 425); - at least one scanning device (115, 429) for scanning the particle beam over the object (125, 425); - at least one detector (116, 117, 119, 121, 419, 428, 500) for detecting interaction particles and / or interaction radiation generated by the interaction of the particle beam with the object (125, 425), - at least one display device (124, 124A) for displaying an image and / or analysis of the object (125, 425), and the particle beam apparatus comprises - at least one control unit (123) comprising a processor in which a computer program product according to claim 16 is loaded.

18. The particle beam device (200) according to claim 17, wherein: The beam generator (101) is implemented as a first beam generator (101) and the particle beam is implemented as a first particle beam comprising first charged particles, wherein the objective lens (107) is implemented as a first objective lens for focusing the first particle beam onto the object (125), and wherein the particle beam device (200) further comprises: - at least one second beam generator (301) for generating a second particle beam comprising second charged particles; and - at least one second objective lens (304) for focusing the second particle beam onto the object (125).

19. The particle beam device (100, 200, 400) according to claim 17 or 18, wherein: The particle beam device (100, 200, 400) is an electron beam device and / or an ion beam device.

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