Method for forming silicon-boron-containing films with low leakage current

Abstract

A method for forming a silicon boron nitride layer is provided. The method includes positioning a substrate on a susceptor in a process region within a process chamber; heating the susceptor that holds the substrate; and introducing a first flow of a first process gas and a second flow of a second process gas into the process region. The first flow of the first process gas contains silane, ammonia, helium, nitrogen, argon, and hydrogen. The second flow of the second process gas contains diborane and hydrogen. The method also includes forming a plasma simultaneously with the first flow of the first process gas and the second flow of the second process gas arriving in the process region, and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.

Description

Technical Field

[0001] Embodiments of the present disclosure relate generally to deposition processes, and more particularly to methods for forming films containing silicon boron nitride (SiBN). Background Art

[0002] In semiconductor manufacturing, various devices can be formed. Such devices include dynamic random access memory (DRAM) components with stop layers and support layers containing silicon and nitrogen. For many DRAM devices, it is necessary to fill the layer containing silicon and nitrogen to also contain boron. However, the layer containing silicon boron nitride usually has an unfavorable thermal budget and a high leakage current value. The high thermal budget increases the diffusion of boron during the additional DRAM device formation process (such as wet etching), thereby causing deformation, and the high leakage current causes an electrical short circuit between the capacitors of the DRAM device.

[0003] Therefore, there is a need for improved silicon boron nitride layers and methods for forming silicon boron nitride layers having relatively high boron concentrations and relatively low leakage currents. Summary of the Invention

[0004] Embodiments of the present disclosure generally relate to improved silicon boron nitride layers and methods for forming silicon boron nitride layers having relatively high boron concentrations and relatively low leakage currents. In some examples, the silicon boron nitride layer is a support layer and / or stop layer within a capacitor or other electronic device.

[0005] In one or more embodiments, a method for forming a silicon boron nitride layer is provided, and the method includes: positioning a substrate on a susceptor in a process region within a process chamber; heating the susceptor holding the substrate from about 225° C. to a deposition temperature of about 575° C.; and introducing a first flow of a first process gas and a second flow of a second process gas into the process region. The first flow of the first process gas contains silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5000 sccm, helium having a flow rate of about 500 sccm to about 20000 sccm, nitrogen (N2) having a flow rate of about 5000 sccm to about 25000 sccm, argon having a flow rate of about 50 sccm to about 10000 sccm, and hydrogen (H2) having a flow rate of about 50 sccm to about 20000 sccm. The second flow of the second process gas contains from about 2 mol% to about 15 mol% diborane, from about 85 mol% to about 98 mol% hydrogen, and has a flow rate from about 1 sccm to about 5000 sccm. The method also includes forming a plasma simultaneously with the first flow of the first process gas and the second flow of the second process gas to the process region, and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate.

[0006] In other embodiments, a method for forming a silicon boron nitride layer is provided, and the method includes positioning a substrate on a susceptor in a process region within a process chamber and introducing a first flow of a first process gas and a second flow of a second process gas into the process region. The first flow of the first process gas contains a silicon-containing precursor, a nitrogen-containing precursor, hydrogen, and at least two gases selected from the group consisting of argon, helium, nitrogen, and any combination thereof. The second flow of the second process gas contains about 2 mol% to about 15 mol% diborane, about 85 mol% to about 98 mol% hydrogen, and a flow rate of about 1 sccm to about 5000 sccm. The method also includes forming a plasma simultaneously with the first flow of the first process gas and the second flow of the second process gas arriving at the process region, and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate. The silicon boron nitride layer contains about 10 atomic percent (at%) to about 50 at% boron, has a nitrogen-to-silicon atomic ratio of about 1.05 to about 1.5, and has a density of less than 1×10 at 1.5 MV / cm (at 1.5 MV / cm). -9 A / cm 2 leakage current.

[0007] In some embodiments, a method for forming a silicon boron nitride layer is provided, and the method includes: positioning a substrate on a susceptor in a process region within a process chamber; heating the susceptor holding the substrate to a temperature of about 225° C. to about 575° C.; maintaining the process region at a pressure of about 2 Torr to about 8 Torr; and introducing a first flow of a first process gas into the process region. The first flow of the first process gas contains silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5,000 sccm, helium having a flow rate of about 500 sccm to about 20,000 sccm, nitrogen having a flow rate of about 5,000 sccm to about 25,000 sccm, argon having a flow rate of about 50 sccm to about 10,000 sccm, and hydrogen having a flow rate of about 50 sccm to about 20,000 sccm. The method further includes: interrupting the first flow of the first process gas; forming a plasma simultaneously with a second flow of a second process gas arriving at the process region; and forming the silicon boron nitride layer on the substrate. The second flow of the second process gas has a flow rate of about 1 sccm to about 5000 sccm and contains about 2 mol% to about 15 mol% diborane and about 85 mol% to about 98 mol% hydrogen. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order that the manner in which the above-mentioned features of the present disclosure may be understood in detail, the present disclosure, briefly summarized above, will be described in more detail by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and may admit to other equally effective embodiments.

[0009] Figure 1 Depicted is a schematic cross-sectional view of a process chamber according to one or more embodiments described and discussed herein.

[0010] Figure 2 Depicted is a schematic cross-sectional view of another process chamber according to one or more embodiments described and discussed herein.

[0011] Figure 3 is a flow chart of a method of forming a silicon boron nitride layer according to one or more embodiments described and discussed herein.

[0012] Figure 4 Depicted are capacitor devices containing silicon boron nitride layers that may be deposited or otherwise produced by methods according to one or more embodiments described and discussed herein.

[0013] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0014] Embodiments of the present disclosure generally relate to improved silicon boron nitride layers and methods for forming silicon boron nitride layers. These silicon boron nitride materials and layers have relatively high boron concentrations and low leakage currents, as well as other properties suitable for use in electronic devices such as capacitors. For example, the silicon boron nitride layers described and discussed herein can be used as support layers and / or stop layers within capacitors or other electronic devices. The silicon boron nitride layer can have a boron concentration of about 10 atomic percent (at%) to about 50 at% (such as about 20 at% to about 40 at%) and a boron concentration of less than 1×10 at 1.5 MV / cm. -9 A / cm 2 leakage current.

[0015] In one or more embodiments, a method for forming a silicon boron nitride layer includes: positioning a substrate on a susceptor in a process region within a process chamber; heating the susceptor holding the substrate to a deposition temperature; and introducing a first flow of a first process gas and a second flow of a second process gas into the process region. In some embodiments, a plasma is ignited or otherwise formed simultaneously with the first flow of the first process gas and the second flow of the second process gas arriving at the process region. The plasma can be generated remotely from the process chamber or in situ within the process chamber. During a plasma-enhanced chemical vapor deposition (PE-CVD) process, the substrate is exposed to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.

[0016] During the PE-CVD process, the susceptor holding the substrate disposed thereon is heated to a deposition temperature of about 225° C., about 250° C., about 300° C., about 350° C., about 400° C., or about 450° C. to about 475° C., about 500° C., about 525° C., about 550° C., about 560° C., about 570° C., about 575° C., about 580° C., or about 600° C. For example, the substrate is heated to about 225° C. to about 600° C., about 225° C. to about 575° C., about 225° C. to about 560° C., about 225° C. to about 550° C., about 225° C. to about 500° C., about 225° C. to about 450° C., about 225° C. to about 400° C., about 225° C. to about 350° C., about 225° C. to about 300° C., about 350° C. to about 600° C., about 350° C. to about 575° C., about 350° C. ℃ to about 560℃, about 350℃ to about 550℃, about 350℃ to about 500℃, about 350℃ to about 450℃, about 350℃ to about 400℃, about 350℃ to about 375℃, about 450℃ to about 600℃, about 450℃ to about 575℃, about 450℃ to about 560℃, about 450℃ to about 550℃, about 450℃ to about 500℃, or about 450℃ to about 475℃.

[0017] During the PE-CVD process, the process region is maintained at a pressure of less than 100 Torr, less than 50 Torr, less than 20 Torr, or less than 10 Torr. The process region is maintained at a pressure of about 0.5 Torr, about 1 Torr, about 2 Torr, about 3 Torr, or about 4 Torr to about 5 Torr, about 6 Torr, about 7 Torr, about 8 Torr, or about 9 Torr. For example, the process region is maintained at a pressure of about 0.5 Torr to less than 10 Torr, about 2 Torr to less than 10 Torr, about 2 Torr to about 8 Torr, about 2 Torr to about 6 Torr, about 2 Torr to about 5 Torr, about 2 Torr to about 4 Torr, about 3 Torr to less than 10 Torr, about 3 Torr to about 8 Torr, about 3 Torr to about 6 Torr, about 3 Torr to about 5 Torr, about 3 Torr to about 4 Torr, about 4 Torr to less than 10 Torr, about 4 Torr to about 8 Torr, about 4 Torr to about 6 Torr, or about 4 Torr to about 5 Torr.

[0018] The susceptor is positioned at a process distance, which is the distance between the susceptor and the showerhead within the process chamber during the PE-CVD process. The process distance is about 100 mils (about 2.5 millimeters (mm)), about 200 mils (about 5 mm), about 300 mils (about 7.5 mm), or about 400 mils (about 10 mm) to about 500 mils (about 12.5 mm), about 600 mils (about 15 mm), about 800 mils (about 20 mm), about 1000 mils (about 25.4 mm), about 2000 mils (about 50.8 mm), or about 5000 mils (about 127 mm). For example, the process distance is about 100 mils to about 5000 mils, about 100 mils to about 2000 mils, about 100 mils to about 1000 mils, about 100 mils to about 800 mils, about 100 mils to about 600 mils, about 100 mils to about 500 mils, about 100 mils to about 400 mils, about 100 mils to about 300 mils, about 300 mils to about 2000 mils, about 300 mils to about 1000 mils, about 300 mils to about 800 mils, about 300 mils to about 600 mils, about 300 mils to about 500 mils, or about 300 mils to about 400 mils.

[0019] The first flow of the first process gas contains one or more silicon-containing precursors, one or more nitrogen-containing precursors, hydrogen (H2), and at least two process gases or carrier gases selected from argon, helium, nitrogen (N2), or any combination thereof. Exemplary silicon-containing precursors may be or include silane, disilane, trisilane, tetrasilane, or any combination thereof. Exemplary nitrogen-containing precursors may be or include ammonia, hydrazine, one or more alkylamines (e.g., dimethylamine), or any combination thereof. In one or more examples, the first process gas contains silane, ammonia, hydrogen (H2), argon, helium, and nitrogen (N2).

[0020] The first flow of the first process gas contains a silicon-containing precursor (e.g., silane) having a flow rate of about 1 sccm, about 5 sccm, about 10 sccm, about 20 sccm, about 30 sccm, or about 50 sccm to about 80 sccm, about 100 sccm, about 150 sccm, about 200 sccm, about 250 sccm, about 300 sccm, about 400 sccm, about 500 sccm, about 800 sccm, about 1000 sccm, about 1500 sccm, or about 2000 sccm. For example, the first gas flow of the first process gas contains a silicon-containing precursor (e.g., silane) having a flow rate of about 1 sccm to about 2000 sccm, about 1 sccm to about 1000 sccm, about 1 sccm to about 500 sccm, about 1 sccm to about 250 sccm, about 1 sccm to about 100 sccm, about 1 sccm to about 50 sccm, about 10 sccm to about 2000 sccm, about 10 sccm to about 1000 sccm, about 10 sccm to about 500 sccm, about 10 sccm to about 250 sccm, about 10 sccm to about 100 sccm, about 10 sccm to about 50 sccm, about 20 sccm to about 2000 sccm, about 20 sccm to about 1000 sccm, about 20 sccm to about 500 sccm, about 20 sccm to about 250 sccm, about 20 sccm to about 100 sccm, or about 20 sccm to about 50 sccm.

[0021] The first flow of the first process gas contains a nitrogen-containing precursor (e.g., ammonia) having a flow rate of about 1 sccm, about 10 sccm, about 50 sccm, about 80 sccm, about 100 sccm, about 150 sccm, about 200 sccm, about 250 sccm, about 300 sccm, about 500 sccm, or about 800 sccm to about 1000 sccm, about 1500 sccm, about 2000 sccm, about 2500 sccm, about 3000 sccm, about 4000 sccm, about 5000 sccm, about 7000 sccm, about 8500 sccm, or about 10000 sccm. For example, the first flow of the first process gas may have a flow rate of about 1 sccm to about 10,000 sccm, about 10 sccm to about 10,000 sccm, about 10 sccm to about 5,000 sccm, about 10 sccm to about 4,000 sccm, about 10 sccm to about 3,000 sccm, about 10 sccm to about 2,000 sccm, about 10 sccm to about 1,500 sccm, about 10 sccm to about 1,000 sccm, about 10 sccm to about 800 sccm, about 10 sccm to about 500 sccm, about 10 sccm to about 300 sccm, about 50 sccm to about 10,000 sccm, about 50 sccm to about 5,000 sccm, about 50 sccm to about 4,000 sccm, about 50 sccm to about 3,000 sccm, or about 50 sccm to about 2,000 sccm. In some embodiments, a nitrogen-containing precursor (e.g., ammonia) is introduced into the liquid phase at a flow rate of about 1000 sccm, about 50 sccm to about 1500 sccm, about 50 sccm to about 1000 sccm, about 50 sccm to about 800 sccm, about 50 sccm to about 500 sccm, about 50 sccm to about 300 sccm, about 100 sccm to about 10000 sccm, about 100 sccm to about 5000 sccm, about 100 sccm to about 4000 sccm, about 100 sccm to about 3000 sccm, about 100 sccm to about 2000 sccm, about 100 sccm to about 1500 sccm, about 100 sccm to about 1000 sccm, about 100 sccm to about 800 sccm, about 100 sccm to about 500 sccm, or about 100 sccm to about 300 sccm.

[0022] The first flow of the first process gas contains helium having a flow rate of about 100 sccm, about 500 sccm, about 750 sccm, or about 1000 sccm to about 1500 sccm, about 2000 sccm, about 5000 sccm, about 8000 sccm, about 10000 sccm, about 15000 sccm, about 20000 sccm, about 30000 sccm, about 40000 sccm, or about 50000 sccm. For example, the first flow of the first process gas may have a flow rate of about 100 sccm to about 50,000 sccm, about 500 sccm to about 50,000 sccm, about 500 sccm to about 40,000 sccm, about 500 sccm to about 20,000 sccm, about 500 sccm to about 15,000 sccm, about 500 sccm to about 12,000 sccm, about 500 sccm to about 10,000 sccm, about 500 sccm to about 8,000 sccm, about 500 sccm to about 5,000 sccm, about 5 00 sccm to about 1000 sccm, about 750 sccm to about 50000 sccm, about 750 sccm to about 40000 sccm, about 750 sccm to about 20000 sccm, about 750 sccm to about 15000 sccm, about 750 sccm to about 12000 sccm, about 750 sccm to about 10000 sccm, about 750 sccm to about 8000 sccm, about 750 sccm to about 5000 sccm, about 750 sccm to about 1000 sccm, about 100 0 sccm to about 50,000 sccm, about 1,000 sccm to about 40,000 sccm, about 1,000 sccm to about 20,000 sccm, about 1,000 sccm to about 15,000 sccm, about 1,000 sccm to about 12,000 sccm, about 1,000 sccm to about 10,000 sccm, about 1,000 sccm to about 8,000 sccm, about 1,000 sccm to about 5,000 sccm, about 1,000 sccm to about 3,000 sccm, about 5,000 sccm to about 50,000 sccm, sccm, about 5,000 sccm to about 40,000 sccm, about 5,000 sccm to about 30,000 sccm, about 5,000 sccm to about 22,000 sccm, about 5,000 sccm to about 20,000 sccm, about 5,000 sccm to about 18,000 sccm, about 5,000 sccm to about 15,000 sccm, about 5,000 sccm to about 12,000 sccm, about 5,000 sccm to about 10,000 sccm, or about 5,000 sccm to about 8,000 sccm.

[0023] The first flow of the first process gas contains nitrogen (N2) having a flow rate of about 100 sccm, about 500 sccm, about 1000 sccm, about 1500 sccm, about 2000 sccm, about 3500 sccm, about 5000 sccm, about 8000 sccm, about 10000 sccm, about 12000 sccm or about 15000 sccm to about 18000 sccm, about 20000 sccm, about 22000 sccm, about 25000 sccm, about 30000 sccm, about 35000 sccm, about 40000 sccm or about 50000 sccm. For example, the first flow of the first process gas may have a flow rate of about 100 sccm to about 50,000 sccm, about 500 sccm to about 50,000 sccm, about 500 sccm to about 40,000 sccm, about 500 sccm to about 20,000 sccm, about 500 sccm to about 15,000 sccm, about 500 sccm to about 12,000 sccm, about 500 sccm to about 10,000 sccm, about 500 sccm to about 8,000 sccm, about 500 sccm to about 5,000 sccm, about 500 sccm to about 1,000 sccm, about 1,000 sccm to about 50,000 sccm, about 1,000 sccm to about 4,000 sccm, or about 1,000 sccm to about 50,000 sccm. 0 sccm, about 1000 sccm to about 30000 sccm, about 1000 sccm to about 25000 sccm, about 1000 sccm to about 22000 sccm, about 1000 sccm to about 20000 sccm, about 1000 sccm to about 15000 sccm, about 1000 sccm to about 12000 sccm, about 1000 sccm to about 10000 sccm, about 1000 sccm to about 8000 sccm, about 1000 sccm to about 5000 sccm, about 1000 sccm to about 3000 sccm, about 5000 sccm to about 50000 sccm, about 5000 sccm to about 40000 sccmm, about 5000 sccm to about 30000 sccm, about 5000 sccm to about 25000 sccm, about 5000 sccm to about 22000 sccm, about 5000 sccm to about 20000 sccm, about 5000 sccm to about 18000 sccm, about 5000 sccm to about 15000 sccm, about 5000 sccm to about 12000 sccm, about 5000 sccm to about 10000 sccm, about 5000 sccm to about 8000 sccm, about 10000 sccm to about 50000 sccm, about 10000 sccm to about 40000 sccm, about 10000 sccm to about 30000 sccm, about 10000 sccm to about 25000 sccm, about 10000 The present invention also provides nitrogen with a flow rate of about 10000 sccm to about 22000 sccm, about 10000 sccm to about 20000 sccm, about 10000 sccm to about 18000 sccm, about 10000 sccm to about 15000 sccm, about 10000 sccm to about 12000 sccm, about 12000 sccm to about 50000 sccm, about 12000 sccm to about 40000 sccm, about 12000 sccm to about 30000 sccm, about 12000 sccm to about 25000 sccm, about 12000 sccm to about 22000 sccm, about 12000 sccm to about 20000 sccm, about 12000 sccm to about 18000 sccm, or about 12000 sccm to about 15000 sccm.

[0024] The first gas flow of the first process gas contains argon having a flow rate of about 50 sccm, about 100 sccm, about 200 sccm, about 300 sccm, about 500 sccm, about 750 sccm, about 1000 sccm, about 1500 sccm, about 2000 sccm, about 3000 sccm, about 4000 sccm, or about 5000 sccm to about 6000 sccm, about 7500 sccm, about 8000 sccm, about 10000 sccm, about 12000 sccm, about 15000 sccm, about 20000 sccm, about 30000 sccm, about 40000 sccm, or about 50000 sccm. For example, the first flow of the first process gas may have a flow rate of about 50 sccm to about 50,000 sccm, about 50 sccm to about 30,000 sccm, about 50 sccm to about 25,000 sccm, about 50 sccm to about 20,000 sccm, about 50 sccm to about 15,000 sccm, about 50 sccm to about 12,000 sccm, about 50 sccm to about 10,000 sccm, about 50 sccm to about 7,500 sccm, about 50 sccm to about 6,000 sccm, or about 50 sccm to about 8,000 sccm. 000 sccm, about 50 sccm to about 5000 sccm, about 50 sccm to about 3000 sccm, about 50 sccm to about 1000 sccm, about 200 sccm to about 50000 sccm, about 200 sccm to about 30000 sccm, about 200 sccm to about 25000 sccm, about 200 sccm to about 20000 sccm, about 200 sccm to about 15000 sccm, about 200 sccm to about 12000 sccm , about 200 sccm to about 10000 sccm, about 200 sccm to about 7500 sccm, about 200 sccm to about 6000 sccm, about 200 sccm to about 5000 sccm, about 200 sccm to about 3000 sccmsccm, about 200 sccm to about 1000 sccm, about 500 sccm to about 50000 sccm, about 500 sccm to about 30000 sccm, about 500 sccm to about 25000 sccm, Argon at a flow rate of about 500 sccm to about 20,000 sccm, about 500 sccm to about 15,000 sccm, about 500 sccm to about 12,000 sccm, about 500 sccm to about 10,000 sccm, about 500 sccm to about 7,500 sccm, about 500 sccm to about 6,000 sccm, about 500 sccm to about 5,000 sccm, about 500 sccm to about 3,000 sccm, or about 500 sccm to about 1,000 sccm.

[0025] The first gas flow of the first process gas contains hydrogen (H2) having a flow rate of about 50 sccm, about 100 sccm, about 200 sccm, about 300 sccm, about 500 sccm, about 750 sccm, about 1000 sccm, about 1500 sccm, about 2000 sccm, about 3000 sccm, about 4000 sccm, or about 5000 sccm to about 6000 sccm, about 7500 sccm, about 8000 sccm, about 10000 sccm, about 12000 sccm, about 15000 sccm, about 20000 sccm, about 30000 sccm, about 40000 sccm, or about 50000 sccm. For example, the first flow of the first process gas may have a flow rate of about 50 sccm to about 50,000 sccm, about 50 sccm to about 30,000 sccm, about 50 sccm to about 25,000 sccm, about 50 sccm to about 20,000 sccm, about 50 sccm to about 15,000 sccm, about 50 sccm to about 12,000 sccm, about 50 sccm to about 10,000 sccm, about 50 sccm to about 7,500 sccm, about 50 sccm to about 6,000 sccm, or about 50 sccm to about 8,000 sccm. 000 sccm, about 50 sccm to about 5000 sccm, about 50 sccm to about 3000 sccm, about 50 sccm to about 1000 sccm, about 200 sccm to about 50000 sccm, about 200 sccm to about 30000 sccm, about 200 sccm to about 25000 sccm, about 200 sccm to about 20000 sccm, about 200 sccm to about 15000 sccm, about 200 sccm to about 12000 sccm , about 200 sccm to about 10000 sccm, about 200 sccm to about 7500 sccm, about 200 sccm to about 6000 sccm, about 200 sccm to about 5000 sccm, about 200 sccm to about 3000 sccm, about 200 sccm to about 1000 sccm, about 500 sccm to about 50000 sccm, about 500 sccm to about 30000 sccm, about 500 sccm to about 25000 sccm, about 500 Hydrogen (H2) having a flow rate of about 500 sccm to about 20,000 sccm, about 500 sccm to about 15,000 sccm, about 500 sccm to about 12,000 sccm, about 500 sccm to about 10,000 sccm, about 500 sccm to about 7,500 sccm, about 500 sccm to about 6,000 sccm, about 500 sccm to about 5,000 sccm, about 500 sccm to about 3,000 sccm, or about 500 sccm to about 1,000 sccm.

[0026] In one or more examples, the first gas flow of the first process gas contains silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5000 sccm, helium having a flow rate of about 500 sccm to about 20000 sccm, nitrogen (N2) having a flow rate of about 5000 sccm to about 25000 sccm, argon having a flow rate of about 50 sccm to about 10000 sccm, and hydrogen (H2) having a flow rate of about 50 sccm to about 20000 sccm. In other examples, the first gas flow of the first process gas contains silane having a flow rate of about 10 sccm to about 250 sccm, ammonia having a flow rate of about 50 sccm to about 2000 sccm, helium having a flow rate of about 750 sccm to about 15000 sccm, nitrogen having a flow rate of about 10000 sccm to about 20000 sccm, argon having a flow rate of about 200 sccm to about 7500 sccm, and hydrogen having a flow rate of about 200 sccm to about 15000 sccm. In some examples, the first gas flow of the first process gas contains silane having a flow rate of about 20 sccm to about 100 sccm, ammonia having a flow rate of about 100 sccm to about 1000 sccm, helium having a flow rate of about 1000 sccm to about 10,000 sccm, nitrogen having a flow rate of about 12,000 sccm to about 18,000 sccm, argon having a flow rate of about 500 sccm to about 5,000 sccm, and hydrogen having a flow rate of about 500 sccm to about 10,000 sccm.

[0027] In one or more embodiments, the second process gas contains one or more boron-containing precursors (e.g., diborane) and hydrogen (H2). In some examples, the second process gas contains about 20 mol% or less of diborane, with the remainder being hydrogen. The second process gas contains the boron-containing precursor (e.g., diborane) at a concentration of about 1 mol%, about 2 mol%, about 3 mol%, about 4 mol%, or about 5 mol% to about 6 mol%, about 8 mol%, about 10 mol%, about 12 mol%, about 15 mol%, or about 20 mol%. For example, the second process gas contains a boron-containing precursor (e.g., diborane) at a concentration of about 2 mol% to about 20 mol%, about 2 mol% to about 15 mol%, about 2 mol% to about 12 mol%, about 2 mol% to about 10 mol%, about 2 mol% to about 8 mol%, about 2 mol% to about 5 mol%, about 2 mol% to about 3 mol%, about 3 mol% to about 20 mol%, about 3 mol% to about 15 mol%, about 3 mol% to about 12 mol%, about 3 mol% to about 10 mol%, about 3 mol% to about 8 mol%, about 3 mol% to about 5 mol%, about 5 mol% to about 20 mol%, about 5 mol% to about 15 mol%, about 5 mol% to about 12 mol%, about 5 mol% to about 10 mol%, or about 5 mol% to about 8 mol%.

[0028] The second process gas contains hydrogen (H2) at a concentration of about 80 mol%, about 85 mol%, about 88 mol%, about 90 mol%, about 92 mol%, about 94 mol% or about 95 mol% to about 96 mol%, about 97 mol%, about 98 mol% or about 99 mol%. For example, the second process gas contains hydrogen at a concentration of about 80 mol% to about 99 mol%, about 80 mol% to about 95 mol%, about 80 mol% to about 92 mol%, about 80 mol% to about 90 mol%, about 80 mol% to about 88 mol%, about 80 mol% to about 85 mol%, about 85 mol% to about 99 mol%, about 85 mol% to about 98 mol%, about 85 mol% to about 95 mol%, about 85 mol% to about 92 mol%, about 85 mol% to about 90 mol%, about 85 mol% to about 88 mol%, about 88 mol% to about 97 mol%, about 90 mol% to about 99 mol%, about 90 mol% to about 95 mol%, about 90 mol% to about 92 mol%, or about 95 mol% to about 99 mol%.

[0029] In one or more examples, the second gas flow of the second process gas has a flow rate of about 1 sccm, about 5 sccm, about 10 sccm, about 20 sccm, about 35 sccm, about 50 sccm, about 65 sccm, about 80 sccm, or about 100 sccm to about 150 sccm, about 200 sccm, about 300 sccm, about 500 sccm, about 800 sccm, about 1000 sccm, about 1500 sccm, about 2000 sccm, about 3000 sccm, about 400 sccm, or about 5000 sccm. For example, the second gas flow of the second process gas has a flow rate of about 1 sccm to about 5000 sccm, about 1 sccm to about 3000 sccm, about 1 sccm to about 2000 sccm, about 1 sccm to about 1000 sccm, about 1 sccm to about 500 sccm, about 1 sccm to about 300 sccm, about 1 sccm to about 200 sccm, about 1 sccm to about 100 sccm, about 1 sccm to about 50 sccm, about 5 sccm to about 5000 sccm, about 5 sccm to about 3000 sccm, about 5 sccm to about 2000 sccm, about 5 sccm to about 1000 sccm, or about 5 sccm to about 5000 sccm. sccm to about 500 sccm, about 5 sccm to about 300 sccm, about 5 sccm to about 200 sccm, about 5 sccm to about 100 sccm, about 5 sccm to about 50 sccm, about 10 sccm to about 5000 sccm, about 10 sccm to about 3000 sccm, about 10 sccm to about 2000 sccm, about 10 sccm to about 1000 sccm, about 10 sccm to about 500 sccm, about 10 sccm to about 300 sccm, about 10 sccm to about 200 sccm, about 10 sccm to about 1000 sccm, or about 10 sccm to about 50 sccm.

[0030] In one or more examples, the second process gas contains about 2 mol% to about 15 mol% diborane and about 85 mol% to about 98 mol% hydrogen, and has a flow rate of about 1 sccm to about 5000 sccm. In other examples, the second process gas contains about 3 mol% to about 12 mol% diborane and about 88 mol% to about 97 mol% hydrogen, and has a flow rate of about 5 sccm to about 2000 sccm. In some examples, the second process gas contains about 5 mol% to about 10 mol% diborane and about 90 mol% to about 95 mol% hydrogen, and has a flow rate of about 10 sccm to about 1000 sccm.

[0031] Properties of silicon nitride layers or materials

[0032] The silicon boron nitride layer contains at least boron, silicon, nitrogen, and hydrogen. In some examples, the silicon boron nitride layer contains more nitrogen than silicon, more silicon than boron, and more boron than hydrogen. In one or more embodiments, the silicon boron nitride layer may have a boron concentration of about 10 atomic percent (at%), about 12 at%, about 15 at%, or about 18 at% to about 20 at%, about 22 at%, about 25 at%, about 28 at%, about 30 at%, about 35 at%, about 40 at%, about 45 at%, or about 50 at%. For example, the silicon boron nitride layer may have a relative humidity of about 10 at % to about 50 at %, about 10 at % to about 45 at %, about 10 at % to about 40 at %, about 10 at % to about 35 at %, about 10 at % to about 30 at %, about 10 at % to about 28 at %, about 10 at % to about 25 at %, about 10 at % to about 22 at %, about 10 at % to about 20 at %, about 10 at % to about 18 at %, about 12 at % to about 45 at %, about 12 at % to about 40 at %, about 12 at % to about 30 at %, about 15 at % to about 50 at %, about 15 at % to about 45 at %, about 15 at % to about 50 ... % to about 40 at %, about 15 at % to about 35 at %, about 15 at % to about 30 at %, about 15 at % to about 28 at %, about 15 at % to about 25 at %, about 15 at % to about 22 at %, about 15 at % to about 20 at %, about 15 at % to about 18 at %, about 20 at % to about 50 at %, about 20 at % to about 45 at %, about 20 at % to about 40 at %, about 20 at % to about 35 at %, about 20 at % to about 30 at %, about 20 at % to about 28 at %, about 20 at % to about 25 at %, or about 20 at % to about 22 at %.

[0033] The silicon boron nitride layer may have a hydrogen concentration of about 1 at%, about 2 at%, about 3 at%, about 4 at%, about 5 at%, or about 6 at% to about 7 at%, about 8 at%, about 10 at%, about 12 at%, about 15 at%, about 18 at%, or about 20 at%. For example, the silicon boron nitride layer may have a hydrogen concentration of about 1 at% to about 20 at%, about 1 at% to about 15 at%, about 2 at% to about 15 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 6 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 1 at% to about 10 at%, about 2 at% to about 10 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, about 6 at% to about 10 at%, or about 8 at% to about 10 at%.

[0034] The silicon boron nitride layer may have a nitrogen concentration of about 20 at %, about 22 at %, about 25 at %, about 28 at %, or about 30 at % to about 32 at %, about 35 at %, about 38 at %, about 40 at %, about 42 at %, about 45 at %, about 48 at %, or about 50 at %. For example, the silicon boron nitride layer may have a nitrogen concentration of about 20 at % to about 50 at %, about 20 at % to about 40 at %, about 20 at % to about 35 at %, about 20 at % to about 30 at %, about 20 at % to about 25 at %, about 25 at % to about 50 at %, about 25 at % to about 40 at %, about 25 at % to about 35 at %, about 25 at % to about 30 at %, about 25 at % to about 28 at %, about 30 at % to about 50 at %, about 30 at % to about 40 at %, about 30 at % to about 35 at %, or about 30 at % to about 32 at %.

[0035] The silicon boron nitride layer may have a silicon concentration of about 18 at %, about 20 at %, about 22 at %, about 25 at %, about 28 at %, or about 30 at % to about 32 at %, about 35 at %, about 38 at %, about 40 at %, about 42 at %, or about 45 at %. For example, the silicon boron nitride layer may have a silicon concentration of about 18 at % to about 45 at %, about 18 at % to about 40 at %, about 18 at % to about 35 at %, about 18 at % to about 30 at %, about 18 at % to about 25 at %, about 25 at % to about 45 at %, about 25 at % to about 40 at %, about 25 at % to about 35 at %, about 25 at % to about 30 at %, about 25 at % to about 28 at %, about 30 at % to about 45 at %, about 30 at % to about 40 at %, about 30 at % to about 35 at %, about 30 at % to about 32 at %, about 28 at % to about 40 at %, about 28 at % to about 35 at %, or about 28 at % to about 32 at %.

[0036] In one or more embodiments, the silicon boron nitride layer has a nitrogen to silicon atomic ratio greater than 1. The silicon boron nitride layer has a nitrogen to silicon atomic ratio of about 1.05, about 1.1, about 1.15, or about 1.2 to about 1.25, about 1.3, about 1.35, about 1.4, about 1.45, or about 1.5. For example, the silicon boron nitride layer has an atomic ratio of nitrogen to silicon of about 1.05 to about 1.5, about 1.05 to about 1.4, about 1.05 to about 1.35, about 1.05 to about 1.3, about 1.05 to about 1.25, about 1.05 to about 1.2, about 1.05 to about 1.1, about 1.1 to about 1.5, about 1.1 to about 1.4, about 1.1 to about 1.35, about 1.1 to about 1.3, about 1.1 to about 1.25, about 1.1 to about 1.2, about 1.15 to about 1.5, about 1.15 to about 1.4, about 1.15 to about 1.35, about 1.15 to about 1.3, about 1.15 to about 1.25, or about 1.15 to about 1.2. In some embodiments, the silicon boron nitride layer contains about 60 at % to about 80 at % boron bonded to silicon and about 20 at % to about 40 at % boron bonded to nitrogen.

[0037] In one or more embodiments, the silicon boron nitride layer has a strength of less than 1×10 -9 A / cm 2 The silicon boron nitride layer has a leakage current of about 5×10 at 1.5MV / cm. -11 A / cm 2 , about 6×10 -11 A / cm 2 , about 8×10 -11 A / cm 2 , about 9×10 -11 A / cm 2 or about 1×10 -10 A / cm 2 to about 2×10 at 1.5MV / cm -10 A / cm 2 , about 6×10 -10 A / cm 2 , about 7.5×10 -10 A / cm 2 , about 8×10 -10 A / cm 2 or about 9.9×10 -10 A / cm 2 In some examples, the silicon boron nitride layer has a leakage current of about 5×10 at 1.5 MV / cm. -11 A / cm 2 to about 9.9×10 -10 A / cm 2 Or about 1×10 at 1.5MV / cm-10 A / cm 2 to about 7×10 -10 A / cm 2 leakage current.

[0038] In one or more examples, the silicon boron nitride layer contains about 10 at % to about 50 at % boron, has a nitrogen to silicon atomic ratio of about 1.05 to about 1.5, and has a density of less than 1×10 -9 A / cm 2 In other examples, the silicon boron nitride layer contains about 20 at % to about 35 at % boron, has a nitrogen to silicon atomic ratio of about 1.1 to about 1.4, and has a capacitance of about 5×10 -11 A / cm 2 About 9.9×10 -10 A / cm 2 leakage current.

[0039] The silicon boron nitride layer has a about about about or about Arrive at the appointment about about about about about about about about or about For example, the silicon boron nitride layer has a thickness of about to about about to about about to about about to about about to about about Arrive at the appointment about Arrive at the appointment about Arrive at the appointment about Arrive at the appointment about Arrive at the appointment about Arrive at the appointment about Arrive at the appointment about Arrive at the appointment about Arrive at the appointment about Arrive at the appointment about Arrive at the appointment about Arrive at the appointment about to about about to about about to about about to about about to about about to about about to about about to about about to about or about to about thickness.

[0040] In some examples, the silicon boron nitride layer is a stop layer and has a thickness of about about about about or about Arrive at the appointment about about or about For example, the stop layer contains silicon boron nitride and has a thickness of about to about about to about or about to about In other examples, the silicon boron nitride layer is a support layer and has a thickness of about about about about or about to about about about about about about about about or about For example, the support layer contains silicon boron nitride and has a thickness of about Arrive at the appointment about Arrive at the appointment or about Arrive at the appointment thickness.

[0041] Figure 1 1 is a schematic cross-sectional view of a process chamber 100, such as a PE-CVD chamber, utilized during one or more methods for forming silicon boron nitride materials and layers. The process chamber 100 includes a chamber body 102 coupled to a vacuum pump 104 and an input manifold 106 coupled to a first gas source 108 and a second gas source 110. The chamber body 102 defines or otherwise contains a process region 112 that includes a susceptor 114 disposed therein to support a substrate 101. The susceptor 114 includes a heating element (not shown) and a mechanism (not shown) for holding the substrate 101 on the susceptor 114, such as an electrostatic chuck, a vacuum chuck, a substrate holding clamp, or the like. The pedestal 114 is coupled to and movably disposed in the process area 112 via a rod 116 connected to an elevator chamber (not shown), which moves the pedestal 114 between a raised processing position and a lowered position to facilitate transferring the substrate 101 into and out of the process chamber 100 through an opening 118 of the chamber body 102.

[0042] A first gas flow controller 120 (such as a mass flow control (MFC) device) is disposed between the first gas source 108 and the input manifold 106 to control a first flow of the first process gas from the first gas source 108 to a showerhead assembly 124 for distributing the first process gas over the process area 112. The showerhead assembly may include a faceplate 121, a baffle 123, and a gas box 125, as shown. Figure 1 The first process gas and the second process gas may be maintained separately through the input manifold 106 and then combined just upstream of the gas box 125 .

[0043] In one or more examples, a first flow of a first process gas via line 131 is delivered from the first gas source 108 through the input manifold 106, a second flow of a second process gas via line 133 is delivered from the second gas source 110 through the input manifold 106, and the first flow of the first process gas via line 131 and the second flow of the second process gas via line 133 are combined to produce a third flow of a third process gas via line 135 before being introduced into the gas box 125 and ultimately into the process region 112.

[0044] The third flow of the third process gas via line 135 can be maintained at a sufficiently low temperature to prevent some precursors (e.g., diborane, silane, and / or ammonia) from reacting in the line and causing dust or generating particles throughout the showerhead assembly 124, the process region 112, and / or the substrate 101. In some examples, the third flow of the third process gas via line 135 is maintained at a temperature less than 165° C., such as about 20° C., about 25° C., about 35° C., about 50° C., about 65° C., about 90° C., or about 100° C. to about 110° C., about 125° C., about 135° C., about 150° C., about 160° C., or about 164° C. For example, the third flow of third process gas via line 135 is maintained at a temperature of about 20° C. to less than 165° C., about 50° C. to less than 165° C., about 75° C. to less than 165° C., about 90° C. to less than 165° C., about 100° C. to less than 165° C., about 120° C. to less than 165° C., about 150° C. to less than 165° C., about 20° C. to about 160° C., about 50° C. to about 160° C., about 75° C. to about 160° C., about 90° C. to about 160° C., about 100° C. to about 160° C., about 120° C. to about 160° C., about 150° C. to about 160° C., about 20° C. to about 140° C., about 50° C. to about 140° C., about 75° C. to about 140° C., about 90° C. to about 140° C., about 100° C. to about 140° C., or about 120° C. to about 140° C.

[0045] According to one or more embodiments that can be combined with other embodiments described herein, the first process gas includes at least one or more silicon-containing precursors, one or more nitrogen-containing precursors, and one or more carrier gases and / or process gases (e.g., helium, argon, hydrogen, and / or nitrogen). For example, the first process gas includes silane (SiH4), ammonia (NH3), helium (He), nitrogen (N2), argon (Ar), and hydrogen (H2). The second controller 122 is disposed between the second gas source 110 and the input manifold 106 to control a second flow of the second process gas from the second gas source 110 to the showerhead assembly 124 for distributing the second process gas throughout the process region 112. According to one or more embodiments that can be combined with other embodiments described herein, the second process gas includes at least one or more boron-containing precursors and hydrogen, such as a mixture of diborane (B2H6) and hydrogen (H2).

[0046] The showerhead assembly 124 is coupled to and in fluid communication with a remote plasma system (RPS) 105. The RPS 105 can be used to form a plasma in the process region 112 from the first and second process gases in the process region 112. In some examples, the plasma is ignited or otherwise generated in the RPS 105, which is disposed outside the chamber body 102. The plasma is delivered or otherwise introduced into the process region 112 while the silicon boron nitride layer is deposited on the substrate 101.

[0047] A third gas source 128 may be coupled to the chamber body 102 for providing additional process gas (e.g., argon, helium, nitrogen, or a combination thereof) to control the pressure within the process region 112. A controller 130 is coupled to the process chamber 100 and configured to control process conditions within the process chamber 100 during a deposition process or other process.

[0048] Figure 2 1 is a schematic cross-sectional view of a process chamber 200 (such as a PE-CVD chamber) for use in a method of forming a silicon boron nitride layer, as described and discussed herein by other embodiments. The process chamber 200 includes a chamber body 102 coupled to a vacuum pump 104 and a manifold 106 coupled to a first gas source 108 and a second gas source 110. The chamber body 102 defines or otherwise contains a process region 112, which includes a susceptor 114 disposed therein to support a substrate 101. The susceptor 114 includes a heating element (not shown) and a mechanism (not shown) for holding the substrate 101 on the susceptor 114, such as an electrostatic chuck, a vacuum chuck, a substrate holding clamp, or the like. The pedestal 114 is coupled and movably disposed in the process area 112 via a rod 116 connected to an elevator chamber (not shown), which moves the pedestal 114 between a raised processing position and a lowered position, which facilitates transferring the substrate 101 into and out of the process chamber 200 through an opening 118 of the chamber body 102.

[0049] A first gas flow controller 120 (such as a mass flow control (MFC) device) is disposed between the first gas source 108 and the input manifold 106 to control a first flow of a first process gas from the first gas source 108 to a showerhead assembly 124 for distributing the first process gas across the process region 112. According to one or more embodiments that can be combined with other embodiments described herein, the first process gas includes at least silane (SiH4), ammonia (NH3), helium (He), nitrogen (N2), argon (Ar), and hydrogen (H2). A second controller 122 is disposed between the second gas source 110 and the input manifold 106 to control a second flow of a second process gas from the second gas source 110 to the showerhead assembly 124 for distributing the second process gas throughout the process region 112. According to one or more embodiments that can be combined with other embodiments described herein, the second process gas includes at least diborane (B2H6) and hydrogen (H2). The showerhead assembly 124 is coupled to a radio frequency (RF) power source 126 for forming a plasma in the process region 112 from the first and second process gases in the process region 112. A third gas source 128 may be coupled to the chamber body 102 for providing additional process gas (e.g., argon, helium, nitrogen, or a combination thereof) to control the pressure within the process region 112. A controller 130 is coupled to the process chamber 200 and is configured to control various aspects of the process chamber 200 during processing.

[0050] Figure 3 3 is a flow chart of a method 300 for forming a silicon boron nitride layer. Figure 2 To describe Figure 3 . However, it should be noted that chambers other than process chambers 100 and 200 may be utilized in conjunction with method 300. At operation 301, a substrate 101 is positioned in a process region 112 of a process chamber 100, 200. The substrate 101 is positioned between a pedestal 114 and a showerhead assembly 124 at a process distance of about 100 mils (about 2.5 millimeters (mm)) to about 5000 mils (about 127 mm) or about 200 mils (about 5 mm) to about 1000 mils (about 25.4 mm). At operation 302, the process region 112 is heated to a deposition temperature of about 575°C or less. The deposition temperature is maintained during method 300. According to embodiments that may be combined with other embodiments described herein, a deposition temperature of the process region 112 of about 550°C or less is achieved by heating the pedestal 114. For example, the deposition temperature is about 225°C to about 575°C. The process region 112 during method 300 is maintained at a pressure of about 2 Torr to about 8 Torr or about 3 Torr to about 6 Torr.

[0051] At operation 303, a first flow of a first process gas is provided to the process region 112. The first flow of the first process gas includes silane at a flow rate of about 0 sccm to about 2,000 sccm or about 1 sccm to about 500 sccm, ammonia at a flow rate of about 0 sccm to about 1,000 sccm or about 10 sccm to about 5,000 sccm, helium at a flow rate of about 0 sccm to about 50,000 sccm or about 500 sccm to about 20,000 sccm, nitrogen (N2) at a flow rate of about 0 sccm to about 50,000 sccm or about 5,000 sccm to about 25,000 sccm, argon at a flow rate of about 0 sccm to about 50,000 sccm or about 50 sccm to about 10,000 sccm, and hydrogen (H2) at a flow rate of about 0 sccm to about 50,000 sccm or about 50 sccm to about 20,000 sccm. At operation 304, the first flow of the first process gas is interrupted. At operation 305, a plasma is formed simultaneously with providing a second flow of a second process gas to the process region 112. According to embodiments that may be combined with other embodiments described herein, a plasma is introduced and / or generated in the process region by the RPS 105 in the process chamber 100 or by an RF power source provided from the RF power source 126 to the showerhead assembly 124 in the process chamber 200. A second gas flow of a second process gas includes about 0 sccm to about 10,000 sccm or about 1 sccm to about 5,000 sccm of the second process gas. About 2 mol% to about 15 mol% of the second process gas is diborane, and the remainder is hydrogen (H2). The method 300 forms a silicon boron nitride layer having a boron concentration of about 10 at% to about 50 at% or about 10 at% to about 20 at%, and having a leakage current of less than 1×10 at 1.5 MV / cm. -9 A / cm 2 .

[0052] Figure 4A capacitor device 400 is depicted that includes one or more silicon boron nitride layers or materials that can be deposited or otherwise produced on a substrate by methods according to one or more embodiments described and discussed herein. Capacitor device 400 is formed in a dielectric layer 402 disposed on the substrate. Dielectric layer 402 can be or include one or more dielectric materials, such as silicon (e.g., amorphous silicon). A nitride stop layer 404 is disposed on the walls of a through-hole formed in dielectric layer 402 and on metal contacts 406. Nitride stop layer 404 contains one or more metal nitride materials, such as titanium nitride, tantalum nitride, tungsten nitride, silicides thereof, dopants thereof, or any combination thereof. Metal contacts 406 contain copper, tungsten, aluminum, chromium, cobalt, alloys thereof, or any combination thereof. An oxide layer 410 is contained within nitride stop layer 404 and contains one or more holes or voids 408 defined by or otherwise formed in oxide layer 410. The oxide layer may be or include silicon oxide or a dopant thereof. A stop layer 420 containing silicon boron nitride may be disposed in a lower portion of the capacitor device 400, a support layer 422 containing silicon boron nitride may be disposed in a middle portion of the capacitor device 400, and a support layer 422 containing silicon boron nitride may be disposed in an upper portion of the capacitor device 400, as shown. Figure 4 Depicted.

[0053] In one or more embodiments, a method for forming a silicon boron nitride layer includes positioning a substrate on a susceptor in a process region within a process chamber, and introducing a first flow of a first process gas and a second flow of a second process gas into the process region. The first flow of the first process gas contains one or more silicon-containing precursors, one or more nitrogen-containing precursors, hydrogen (H2), and at least two gases selected from argon, helium, nitrogen (N2), or any combination thereof. The method also includes forming a plasma simultaneously with the first flow of the first process gas and the second flow of the second process gas arriving at the process region, and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.

[0054] In other embodiments, a method for forming a silicon boron nitride layer includes positioning a substrate on a susceptor in a process region within a process chamber; heating the susceptor holding the substrate to a deposition temperature; maintaining the process region at a process pressure as described and discussed above; and introducing a first flow of a first process gas into the process region. The first flow of the first process gas includes one or more silicon-containing precursors, one or more nitrogen-containing precursors, helium, nitrogen (N2), argon, and hydrogen (H2). The method further includes interrupting the first flow of the first process gas; forming a plasma simultaneously with a second flow of a second process gas containing one or more boron-containing precursors and hydrogen (H2) arriving at the process region; and forming the silicon boron nitride layer on the substrate.

[0055] In summary, a method for forming a nanostructured carbon nanotube having a boron concentration of about 20 at % to about 40 at % and a boron concentration of less than 1×10 -9 A / cm 2 A method for reducing leakage current in a silicon boron nitride layer. Utilization of hydrogen allows for the formation of nitrogen-rich, silicon-rich, and boron-rich layers. Hydrogen breaks Si-H bonds to remove hydrogen within the layer and create dangling bonds, while the process gas reacts with the active surface of the substrate (e.g., dangling bonds) to create Si-Si, Si-N, and Si-B bonds.

[0056] Embodiments of the present disclosure further relate to any one or more of the following paragraphs 1-35:

[0057] 1. A method for forming a silicon boron nitride layer, comprising: positioning a substrate on a susceptor in a process region within a process chamber; heating the susceptor holding the substrate to a deposition temperature of about 225° C. to about 575° C.; introducing a first flow of a first process gas and a second flow of a second process gas into the process region, wherein: the first flow of the first process gas comprises: silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5000 sccm, helium having a flow rate of about 500 sccm to about 20000 sccm, nitrogen (N2O) having a flow rate of about 5000 sccm to about 25000 sccm, and the like. ), argon with a flow rate of about 50 sccm to about 10,000 sccm, hydrogen (H2) with a flow rate of about 50 sccm to about 20,000 sccm, and a second flow of a second process gas including: about 2 mole percent (mol%) to about 15 mol% diborane, about 85 mol% to about 98 mol% hydrogen (H2) and a flow rate of about 1 sccm to about 5,000 sccm; forming a plasma simultaneously with the first flow of the first process gas and the second flow of the second process gas reaching the process region; and exposing the substrate to the first process gas, the second process gas and the plasma to deposit a silicon boron nitride layer on the substrate.

[0058] 2. A method for forming a silicon boron nitride layer, comprising: positioning a substrate on a susceptor in a process region within a process chamber; introducing a first flow of a first process gas and a second flow of a second process gas into the process region, wherein: the first flow of the first process gas comprises a silicon-containing precursor, a nitrogen-containing precursor, hydrogen (H2), and at least two gases selected from the group consisting of argon, helium, nitrogen (N2), and any combination thereof, and the second flow of the second process gas comprises: about 2 mol% to about 15 mol% diborane, about 85 mol% to about 98 mol% tantalum, and about 1 mol% to about 2 mol% tantalum. The method further comprises: providing a first process gas and a second process gas to a process region; forming a plasma simultaneously with a first flow of the first process gas and a second flow of the second process gas to the process region; and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate, wherein the silicon boron nitride layer includes about 10 atomic percent (at%) to about 50 at% boron, wherein the silicon boron nitride layer has an atomic ratio of nitrogen to silicon of about 1.05 to about 1.5, and wherein the silicon boron nitride layer has a nitrogen to silicon atomic ratio of less than 1×10 -9 A / cm 2 leakage current.

[0059] 3. A method for forming a silicon boron nitride layer, comprising: positioning a substrate on a susceptor in a process region within a process chamber; heating the susceptor holding the substrate to a deposition temperature of about 225° C. to about 575° C.; maintaining the process region at a pressure of about 2 Torr to about 8 Torr; introducing a first flow of a first process gas into the process region, wherein the first flow of the first process gas comprises: silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5000 sccm, helium having a flow rate of about 500 sccm to about 20000 sccm, and argon having a flow rate of about 5000 sccm to about 10000 sccm. Nitrogen (N2) having a flow rate of about 25,000 sccm, argon having a flow rate of about 50 sccm to about 10,000 sccm, and hydrogen (H2) having a flow rate of about 50 sccm to about 20,000 sccm; interrupting a first flow of a first process gas; forming a plasma simultaneously with a second flow of a second process gas reaching the process region, wherein the second flow of the second process gas has a flow rate of about 1 sccm to about 5,000 sccm and includes about 2 mole percent (mol%) to about 15 mol% diborane and about 85 mol% to about 98 mol% hydrogen (H2); and forming a silicon boron nitride layer on the substrate.

[0060] 4. The method of any of paragraphs 1-3, wherein the silicon boron nitride layer comprises from about 10 atomic percent (at %) to about 50 at % boron.

[0061] 5. The method of any of paragraphs 1-4, wherein the silicon boron nitride layer comprises about 10 at % to about 20 at % boron.

[0062] 6. The method of any of paragraphs 1-5, wherein the silicon boron nitride layer comprises about 20 at % to about 30 at % boron.

[0063] 7. The method of any of paragraphs 1-6, wherein the silicon boron nitride layer comprises about 15 at % to about 30 at % boron.

[0064] 8. The method of any of paragraphs 1-7, wherein the silicon boron nitride layer comprises about 15 at % to about 20 at % boron.

[0065] 9. The method of any of paragraphs 1-8, wherein the silicon boron nitride layer has a nitrogen to silicon atomic ratio of about 1.05 to about 1.5.

[0066] 10. The method of any of paragraphs 1-9, wherein the silicon boron nitride layer has a nitrogen to silicon atomic ratio of about 1.1 to about 1.4.

[0067] 11. The method of any of paragraphs 1-10, wherein the silicon boron nitride layer has a nitrogen to silicon atomic ratio of about 1.15 to about 1.35.

[0068] 12. The method of any of paragraphs 1-11, wherein the silicon boron nitride layer includes about 5 at % to about 15 at % hydrogen.

[0069] 13. The method of any of paragraphs 1 to 12, wherein the silicon boron nitride layer has a thickness of less than 1×10 -9 A / cm 2 leakage current.

[0070] 14. The method of any of paragraphs 1 to 13, wherein the silicon boron nitride layer has a thickness of about 5×10 -11 A / cm 2 to about 9.9×10 -10 A / cm 2 leakage current.

[0071] 15. The method of any of paragraphs 1 to 14, wherein the silicon boron nitride layer has a thickness of about 1×10 -10 A / cm 2 to about 7×10 -10 A / cm 2 leakage current.

[0072] The method of any of paragraphs 1-15, wherein the silicon boron nitride layer comprises: about 60 at % to about 80 at % boron bonded to silicon; and about 20 at % to about 40 at % boron bonded to nitrogen.

[0073] 17. The method of any of paragraphs 1-16, wherein the deposition temperature is from about 350°C to about 560°C.

[0074] 18. The method of any of paragraphs 1-17, wherein the deposition temperature is from about 450°C to about 550°C.

[0075] 19. The method of any of paragraphs 1-18, wherein the first flow of the first process gas and the second flow of the second process gas are combined to produce a third flow of the third process gas before being introduced into the process zone.

[0076] 20. The method of any of paragraphs 1-19, wherein the third stream of the third process gas is maintained at a temperature of about 20°C to less than 165°C.

[0077] 21. The method of any of paragraphs 1-20, wherein the first gas flow of the first process gas includes: silane having a flow rate of about 10 sccm to about 250 sccm, ammonia having a flow rate of about 50 sccm to about 2000 sccm, helium having a flow rate of about 750 sccm to about 15000 sccm, nitrogen having a flow rate of about 10000 sccm to about 20000 sccm, argon having a flow rate of about 200 sccm to about 7500 sccm, and hydrogen having a flow rate of 200 sccm to 15000 sccm.

[0078] 22. The method of any of paragraphs 1-21, wherein the first gas flow of the first process gas includes: silane having a flow rate of about 20 sccm to about 100 sccm, ammonia having a flow rate of about 100 sccm to about 1000 sccm, helium having a flow rate of about 1000 sccm to about 10000 sccm, nitrogen having a flow rate of about 12000 sccm to about 18000 sccm, argon having a flow rate of about 500 sccm to about 5000 sccm, and hydrogen having a flow rate of about 500 sccm to about 10000 sccm.

[0079] 23. The method of any of paragraphs 1-22, wherein the second flow of the second process gas comprises: about 3 mol% to about 12 mol% diborane, about 88 mol% to about 97 mol% hydrogen, and a flow rate of about 5 sccm to about 2000 sccm.

[0080] 24. The method of any of paragraphs 1-23, wherein the second flow of the second process gas comprises: about 5 mol% to about 10 mol% diborane, about 90 mol% to about 95 mol% hydrogen, and a flow rate of about 10 sccm to about 1000 sccm.

[0081] 25. The method of any of paragraphs 1-24, further comprising maintaining the process zone at a pressure of about 2 Torr to about 8 Torr.

[0082] 26. The method of any of paragraphs 1-25, wherein the susceptor is positioned at a process distance between the susceptor and the showerhead of the process chamber, and wherein the process distance is from about 200 mils to about 1000 mils.

[0083] 27. The method of any of paragraphs 1 to 26, wherein the silicon boron nitride layer is located in a capacitor device disposed on a substrate.

[0084] 28. The method of any of paragraphs 1-27, wherein the silicon boron nitride layer is a support layer for a capacitor device.

[0085] 29. The method of any of paragraphs 1-28, wherein the silicon boron nitride layer is a stop layer of a capacitor device.

[0086] 30. The method of any of paragraphs 1-29, wherein the silicon boron nitride layer has a thickness of about Arrive at the appointment thickness.

[0087] 31. The method of any of paragraphs 1 to 30, wherein the silicon boron nitride layer is a stop layer and has a thickness of about Arrive at the appointment thickness, or about thickness.

[0088] 32. The method of any of paragraphs 1 to 31, wherein the silicon boron nitride layer is a support layer and has a thickness of about Arrive at the appointment thickness, or about thickness.

[0089] 33. The method of any of paragraphs 1-32, further comprising: generating a plasma in a remote plasma system disposed outside the process chamber; and delivering the plasma into the process region while depositing the silicon boron nitride layer on the substrate.

[0090] 34. The method of any of paragraphs 1 to 33, wherein the silicon boron nitride layer comprises about 20 at % to about 35 at % boron, wherein the silicon boron nitride has a nitrogen to silicon atomic ratio of about 1.1 to about 1.4, and wherein the silicon boron nitride layer has a carbon density of about 5×10 -11 A / cm 2 to about 9.9×10 -10 A / cm 2 leakage current.

[0091] 35. A silicon boron nitride layer or silicon boron nitride material manufactured, produced, deposited, or otherwise formed by any of the methods of paragraphs 1-34.

[0092] Although the foregoing is directed to embodiments of the present disclosure, other and further embodiments may be devised without departing from the basic scope thereof, and the scope thereof is determined by the appended claims. All documents described herein are incorporated herein by reference, including any priority documents and / or testing procedures not inconsistent herewith. It will be apparent from the foregoing general description and specific embodiments that, although various forms of the present disclosure have been shown and described, various modifications may be made without departing from the spirit and scope of the present disclosure. Therefore, it is not intended that the present disclosure be limited thereby. Likewise, for purposes of U.S. law, the term "comprising" is considered synonymous with the term "including." Likewise, whenever the transition phrase "comprising" is preceded by a composition, element, or group of elements, it should be understood that we also contemplate the same composition or group of elements using the transition phrases "consisting essentially of," "consisting of," "selected from the group consisting of," or "is" before listing the composition, element, or multiple elements, and vice versa.

[0093] Certain embodiments and features have been described using a set of numerical upper limits and a set of numerical lower limits. It should be understood that, unless otherwise indicated, ranges including combinations of any two values are contemplated, e.g., any lower value combined with any higher value, any two lower values combined, and / or any two higher values combined. Certain lower limits, upper limits, and ranges appear in one or more of the claims appended hereto.

Claims

1. A method for forming a silicon boron nitride layer, comprising: positioning a substrate on a susceptor in a process region within the process chamber; heating a susceptor holding the substrate to a deposition temperature of 225° C. to 575° C.; A first gas stream of a first process gas and a second gas stream of a second process gas are introduced into the process zone, wherein: The first flow of the first process gas comprises: Silane having a flow rate of 1 sccm to 500 sccm; ammonia having a flow rate of 10 sccm to 5000 sccm; Helium having a flow rate of 500 sccm to 20,000 sccm; Nitrogen (N2) having a flow rate of 5000 sccm to 25000 sccm; Argon having a flow rate of 50 sccm to 10,000 sccm; and Hydrogen (H2) having a flow rate of 50 sccm to 20,000 sccm, and The second flow of the second process gas comprises: 2 mole percent (mol%) to 15 mol% diborane; 85 mol% to 98 mol% hydrogen (H2); and Flow rates from 1 sccm to 5000 sccm; forming a plasma simultaneously with the first flow of the first process gas and the second flow of the second process gas to the process region; and The substrate is exposed to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate. 2 . The method of claim 1 , wherein the silicon boron nitride layer comprises 10 atomic percent (at %) to 50 at % boron. 3 . The method of claim 1 , wherein the silicon boron nitride layer has an atomic ratio of nitrogen to silicon of 1.05 to 1.

5. The method of claim 1 , wherein the silicon boron nitride layer comprises 5 at % to 15 at % hydrogen.

5. The method of claim 1, wherein the silicon boron nitride layer has a thickness of less than 1×10 -9 A / cm 2 leakage current.

6. The method of claim 1 , wherein the silicon boron nitride layer comprises: 60 at % to 80 at % boron bonded to silicon; as well as 20 at % to 40 at % boron bonded to nitrogen. The method of claim 1 , wherein the deposition temperature is 350° C. to 560° C.

8. The method of claim 1, wherein the first flow of the first process gas and the second flow of the second process gas are combined to produce a third flow of a third process gas before being introduced into the process zone.

9. The method of claim 8, wherein the third flow of the third process gas is maintained at a temperature of 20°C to less than 165°C.

10. The method of claim 1 , wherein the first flow of the first process gas comprises: Silane having a flow rate of 10 sccm to 250 sccm; ammonia having a flow rate of 50 sccm to 2000 sccm; Helium having a flow rate of 750 sccm to 15,000 sccm; Nitrogen having a flow rate of 10,000 sccm to 20,000 sccm; Argon having a flow rate of 200 sccm to 7500 sccm; and Hydrogen having a flow rate of 200 sccm to 15,000 sccm.

11. The method of claim 1 , wherein the second flow of the second process gas comprises: 3 mol% to 12 mol% of diborane; 88 mol% to 97 mol% hydrogen; as well as Flow rate of 5 sccm to 2000 sccm.

12. The method of claim 1, further comprising maintaining the process region at a pressure of 2 Torr to 8 Torr.

13. The method of claim 1, wherein the susceptor is positioned at a process distance between the susceptor and a showerhead in the process chamber, and wherein the process distance is 200 mils to 1000 mils.

14. The method of claim 1, wherein the silicon boron nitride layer is located in a capacitor device disposed on the substrate.

15. The method of claim 14, wherein the silicon boron nitride layer is a support layer or a stop layer of the capacitor device.

16. The method of claim 1, wherein the silicon boron nitride layer has arrive thickness.

17. The method of claim 1, further comprising: generating the plasma in a remote plasma system disposed outside the process chamber; as well as The plasma is delivered into the process region while depositing the silicon boron nitride layer on the substrate.

18. A method for forming a silicon boron nitride layer, comprising: positioning a substrate on a susceptor in a process region within the process chamber; A first gas stream of a first process gas and a second gas stream of a second process gas are introduced into the process zone, wherein: The first flow of the first process gas includes a silicon-containing precursor, a nitrogen-containing precursor, hydrogen (H2), and at least two gases selected from the group consisting of argon, helium, nitrogen (N2), and any combination thereof, and The second flow of the second process gas comprises: 2 mole percent (mol%) to 15 mol% diborane; 85 mol% to 98 mol% hydrogen (H2); and Flow rates from 1 sccm to 5000 sccm; forming a plasma simultaneously with the first flow of the first process gas and the second flow of the second process gas to the process region; and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate, wherein the silicon boron nitride layer comprises 10 atomic percent (at%) to 50 at% boron, wherein the silicon boron nitride layer has a nitrogen to silicon atomic ratio of 1.05 to 1.5, and Wherein, at 1.5MV / cm, the silicon boron nitride layer has a thickness of less than 1×10 -9 A / cm 2 leakage current.

19. The method of claim 18, wherein the silicon boron nitride layer comprises 20 at % to 35 at % boron, wherein the silicon boron nitride layer has a nitrogen to silicon atomic ratio of 1.1 to 1.4, and wherein at 1.5 MV / cm, the silicon boron nitride layer has a 5×10 -11 A / cm 2 to 9.9×10 -10 A / cm 2 leakage current.

20. A method for forming a silicon boron nitride layer, comprising: positioning a substrate on a susceptor in a process region within the process chamber; heating a susceptor holding the substrate to a deposition temperature of 225° C. to 575° C.; Maintaining the process area at a pressure of 2 Torr to 8 Torr; introducing a first flow of a first process gas into the process zone, wherein the first flow of the first process gas comprises: Silane having a flow rate of 1 sccm to 500 sccm; ammonia having a flow rate of 10 sccm to 5000 sccm; Helium having a flow rate of 500 sccm to 20,000 sccm; Nitrogen (N2) having a flow rate of 5000 sccm to 25000 sccm; Argon having a flow rate of 50 sccm to 10,000 sccm; and Hydrogen (H2) having a flow rate of 50 sccm to 20,000 sccm; interrupting the first flow of the first process gas; forming a plasma simultaneously with a second flow of a second process gas to the process region, wherein the second flow of the second process gas has a flow rate of 1 sccm to 5000 sccm and comprises 2 mole percent (mol %) to 15 mol % diborane and 85 mol % to 98 mol % hydrogen (H); and The silicon boron nitride layer is formed on the substrate.

Images