Plasma processing system and edge ring replacement method

Abstract

The present invention provides a plasma processing system and an edge ring replacement method. The plasma processing system includes a plasma processing device, a conveying device, and a control device. The control device controls the following steps: transferring a cover ring supporting the edge ring to a lifting component; moving a jig supported by a support portion between the annular component mounting surface and the cover ring; transferring the jig to another lifting component; after the support portion retracts, the lifting component and the other lifting components move relative to each other to transfer the edge ring from the cover ring to the jig; lowering only the lifting component to transfer the cover ring to the annular component mounting surface; transferring the jig supporting the edge ring from another lifting component to the support portion; and conveying the jig supporting the edge ring from the processing container. According to the present invention, replacement of the edge ring while supported by the cover ring and replacement of the edge ring alone can be selectively performed.

Description

Technical Field

[0001] The present invention relates to a plasma processing system and a method for replacing an edge ring. Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus in which a substrate is placed within a processing chamber, a focus ring is arranged to surround the substrate, and plasma processing is performed on the substrate. The substrate processing apparatus includes a loading platform and a plurality of positioning pins. The loading platform includes a carrier having a substrate loading surface for the substrate and a focus ring loading surface for the focus ring. The positioning pins are pin-shaped and made of a material that expands radially upon heating. They are mounted on the focus ring, extending from the lower surface of the carrier. The positioning pins are inserted into positioning holes formed in the focus ring loading surface of the carrier and radially expand upon heating to engage, thereby positioning the focus ring. The substrate processing apparatus disclosed in Patent Document 1 also includes lift pins and a transport arm. The lift pins are positioned on the loading platform so as to extend from or retract into the focus ring loading surface, thereby raising the focus ring along with the positioning pins and removing it from the focus ring loading surface. The transport arm is located outside the processing chamber and, via a feed-in / feed-out port provided in the processing chamber, allows the focus ring to be replaced between the lift pins and the carrier, with the positioning pins still attached.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2011-54933. Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The technology of the present invention selectively performs replacement of the edge ring while supported by the cover ring or replacement of the edge ring alone when replacing the edge ring in a plasma processing system using both the edge ring and the cover ring.

[0008] Technical means to solve the problem

[0009] One embodiment of the present invention includes: a plasma processing device having a substrate support table and a decompressible processing container in which the substrate support table can be installed, the plasma processing device performs plasma processing on the substrate on the substrate support table; a conveying device having a supporting portion that supports the substrate, and the substrate is conveyed into and out of the processing container by inserting or withdrawing the supporting portion into or from the processing container; and a control device, the substrate support table having: a substrate loading surface for loading the substrate; an annular component loading surface for loading the cover ring in a state where the cover ring supports the edge ring, wherein , the edge ring is configured to surround the substrate held on the substrate loading surface, and the cover ring covers the outer side surface of the edge ring; a lifting component is lifted and lowered in a manner that can extend from a portion of the annular component loading surface that overlaps with the cover ring when viewed from above; a lifting mechanism is capable of lifting and lowering the lifting component; other lifting components are lifted and lowered in a manner that can extend from the substrate loading surface; and other lifting mechanisms are capable of lifting and lowering the other lifting components, and the support portion of the conveying device is configured to support the cover ring that supports the edge ring, and to support a substrate having a thickness larger than the edge ring. The control device controls the lifting mechanism, the conveying device and the other lifting mechanisms to perform the following steps: raising the lifting component to transfer the cover ring supporting the edge ring from the annular component loading surface to the lifting component; moving the tool supported by the supporting portion between the substrate loading surface and the annular component loading surface and the cover ring supporting the edge ring; raising the other lifting components to transfer the tool from the supporting portion to the other lifting components; after the supporting portion retreats, The lifting member and the other lifting members move relative to each other to transfer the edge ring from the cover ring to the jig; the lifting member is lowered to transfer the cover ring from the lifting member to the annular member mounting surface; the supporting portion is moved between the cover ring and the jig supporting the edge ring, and then the other lifting member is lowered to transfer the jig supporting the edge ring from the other lifting member to the supporting portion; and the supporting portion is pulled out of the processing container to send the jig supporting the edge ring out of the processing container.

[0010] Effects of the Invention

[0011] According to the present invention, when replacing an edge ring in a plasma processing system using both an edge ring and a cover ring, replacement of the edge ring while supported by the cover ring or replacement of the edge ring alone can be selectively performed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1This is a front view schematically showing the structure of the plasma processing system according to the reference first embodiment.

[0013] Figure 2 Yes Figure 1 A schematic longitudinal sectional view of the structure of the processing assembly.

[0014] Figure 3 yes Figure 2 A partial enlarged view of .

[0015] Figure 4 The circumferential direction of the wafer support table is Figure 2 Partial cross-sectional views of different parts.

[0016] Figure 5 This is a diagram schematically showing a state within the processing module during the edge ring mounting process.

[0017] Figure 6 This is a diagram schematically showing a state within the processing module during the edge ring mounting process.

[0018] Figure 7 This is a diagram schematically showing a state within the processing module during the edge ring mounting process.

[0019] Figure 8 This is a diagram for explaining another example of lift pins.

[0020] Figure 9 This is a diagram for explaining another example of an electrostatic chuck.

[0021] Figure 10 It is a partially enlarged cross-sectional view schematically showing the structure of a wafer support table serving as a substrate support table according to the second reference embodiment.

[0022] Figure 11 It is a partially enlarged cross-sectional view schematically showing the structure of a wafer support table serving as a substrate support table according to a third reference embodiment.

[0023] Figure 12 It is a front view schematically showing the structure of the plasma processing system according to this embodiment.

[0024] Figure 13 It is a partially enlarged cross-sectional view schematically showing the structure of a wafer support table serving as a substrate support table according to the present embodiment.

[0025] Figure 14 It is a partially enlarged cross-sectional view showing another example of the wafer support table.

[0026] Figure 15 It is a partially enlarged cross-sectional view showing another example of the wafer support table.

[0027] Figure 16 This is a diagram schematically showing a state inside the processing module during the removal process of the edge ring unit.

[0028] Figure 17 This is a diagram schematically showing a state inside the processing module during the removal process of the edge ring unit.

[0029] Figure 18 This is a diagram schematically showing a state inside the processing module during the removal process of the edge ring unit.

[0030] Figure 19 This is a diagram schematically showing a state inside the processing module during the removal process of the edge ring unit.

[0031] Figure 20 This is a diagram schematically showing a state inside the processing module during the removal process of the edge ring unit.

[0032] Figure 21 This is a diagram schematically showing a state inside the processing module during the removal process of the edge ring unit.

[0033] Figure 22 This is a diagram schematically showing a state in the processing module during the removal process of the cover ring supporting the edge ring.

[0034] Figure 23 This is a diagram schematically showing a state in the processing module during the removal process of the cover ring supporting the edge ring.

[0035] Figure 24 This is a diagram schematically showing a state in the processing module during the removal process of the cover ring supporting the edge ring.

[0036] Figure 25 This is a diagram schematically showing a state in the processing module during the removal process of the cover ring supporting the edge ring.

[0037] Figure 26 This is a diagram schematically showing a state in the processing module during the removal process of the cover ring supporting the edge ring.

[0038] Figure 27 This is a diagram schematically showing a state in the processing module during the removal process of the cover ring supporting the edge ring.

[0039] Description of Reference Signs

[0040] 60 Processing Components

[0041] 70 conveyor device

[0042] 71 conveyor arm

[0043] 80 Control Device

[0044] 100 Plasma Processing Chamber

[0045] 104a upper surface

[0046] 106 lift pin

[0047] 110 lifting mechanism

[0048] 114 lifting mechanism

[0049] 400 wafer support table

[0050] 402a upper surface

[0051] 403a upper surface

[0052] 405 lifting parts

[0053] Ca-covered ring

[0054] Fa edge ring

[0055] J fixture

[0056] W chip DETAILED DESCRIPTION

[0057] (Reference embodiment)

[0058] In the manufacturing process of semiconductor devices, plasma processing such as etching and film formation is performed on substrates such as semiconductor wafers (hereinafter referred to as "wafers") using plasma. Plasma processing is performed while the wafer is held on a substrate support table within a processing chamber configured to be able to withstand decompression.

[0059] Furthermore, during plasma processing, annular components called edge rings and focus rings are sometimes placed around the substrate on a substrate support table to achieve good and uniform processing results in the center and periphery of the substrate. When using an edge ring, it is positioned and arranged with high precision to achieve uniform processing results in the circumferential direction of the substrate periphery. For example, Patent Document 1 describes an edge ring positioned using positioning pins that extend from its lower surface and are inserted into positioning holes formed in the edge ring mounting surface.

[0060] When an edge ring is worn out, it is typically replaced by an operator. However, it is also conceivable to use a conveyor device for conveying the edge ring. For example, Patent Document 1 discloses edge ring replacement using lift pins that extend from or retract from the edge ring mounting surface of a mounting table and raise and detach the edge ring from the mounting surface, and a conveyor arm that can transport both wafers and edge rings into and out of the processing chamber.

[0061] However, when replacing an edge ring using a conveyor, if the edge ring's conveying accuracy is poor, a portion of the edge ring may impact the substrate mounting surface of the substrate support table, for example, and the edge ring may not be properly positioned on the edge ring mounting surface of the substrate support table. For example, if the difference between the edge ring's inner diameter and the diameter of the substrate mounting surface is smaller than the edge ring's conveying accuracy (conveyance error), and if the substrate mounting surface is positioned higher than the edge ring mounting surface, the inner side of the edge ring may catch on the substrate mounting surface, making it impossible to position the edge ring on the edge ring mounting surface.

[0062] Furthermore, during plasma processing, a ring-shaped member called a cover ring is sometimes disposed to cover the circumferential outer surface of an edge ring. In such cases, if a conveyor device is used to replace the cover ring, the cover ring may not be properly and accurately placed on the mounting surface for the cover ring.

[0063] Therefore, the technology of the reference embodiment is to position and appropriately place the ring-shaped member on the placement surface of the substrate supporting table facing the ring-shaped member, regardless of the conveyance accuracy of the ring-shaped member.

[0064] Hereinafter, a substrate support table, a plasma processing system, and a replacement method for an edge ring according to a reference embodiment will be described with reference to the accompanying drawings. In addition, in this specification and the accompanying drawings, elements having substantially the same functional structure are denoted by the same reference numerals, and repeated descriptions are omitted.

[0065] (Reference embodiment 1)

[0066] Figure 1 This is a front view schematically showing the structure of the plasma processing system according to the reference first embodiment.

[0067] Figure 1 In the plasma processing system 1, plasma processing such as etching, film formation, and diffusion is performed on a wafer W as a substrate using plasma.

[0068] like Figure 1 As shown, plasma processing system 1 includes an atmospheric section 10 and a reduced pressure section 11, which are integrally connected via load lock assemblies 20 and 21. Atmospheric section 10 includes atmospheric components for performing desired processing on wafers W under an atmospheric pressure atmosphere. Reduced pressure section 11 includes reduced pressure components for performing desired processing on wafers W under a reduced pressure atmosphere.

[0069] The load lock assemblies 20 and 21 are provided to connect the loading assembly 30 (described later) of the atmospheric section 10 and the transfer assembly 50 (described later) of the reduced pressure section 11 via gate valves (not shown). The load lock assemblies 20 and 21 are configured to temporarily hold the wafer W. The load lock assemblies 20 and 21 are configured to switch between an atmospheric pressure atmosphere and a reduced pressure atmosphere (vacuum state).

[0070] The atmospheric section 10 includes a loading assembly 30 including a conveyor device 40 (described later), and a loading port 32 on which hoop rings 31a and 31b are placed. Hoop ring 31a can store multiple wafers W, while hoop ring 31b can store multiple edge rings F. Furthermore, an orientation assembly (not shown) for adjusting the horizontal orientation of the wafers W and edge rings F, and a storage assembly (not shown) for storing multiple wafers W may be provided adjacent to the loading assembly 30.

[0071] The interior of the loading assembly 30 is formed of a rectangular housing, and the interior of the housing is maintained at atmospheric pressure. A plurality of, for example, five, loading ports 32 are arranged side by side on one side of the housing, forming a long side of the loading assembly 30. Load lock assemblies 20 and 21 are arranged side by side on the other side of the housing, forming a long side of the loading assembly 30.

[0072] A transport device 40 for transporting wafers W or edge rings F is provided within the loader assembly 30. The transport device 40 includes a transport arm 41 that supports and moves the wafers W or edge rings F; a rotary table 42 that rotatably supports the transport arm 41; and a base 43 on which the rotary table 42 is mounted. Furthermore, a guide rail 44 extending along the longitudinal direction of the loader assembly 30 is provided within the loader assembly 30. The base 43 is mounted on the guide rail 44, and the transport device 40 is configured to be movable along the guide rail 44.

[0073] The decompression section 11 includes a transport assembly 50 for transporting wafers W or edge rings F, and a processing assembly 60 serving as a plasma processing device for performing the desired plasma treatment on the wafers W transported from the transport assembly 50. The interiors of the transport assembly 50 and the processing assembly 60 are each maintained in a reduced pressure atmosphere. Multiple, for example, eight, processing assemblies 60 are provided for each transport assembly 50. The number and arrangement of the processing assemblies 60 are not limited to those in this reference embodiment and can be arbitrarily set, as long as at least one processing assembly is provided for replacement of the edge ring F.

[0074] The interior of the transport assembly 50 is formed of a polygonal (pentagonal in the illustrated example) frame, and is connected to the load lock assemblies 20 and 21 as described above. The transport assembly 50 transports wafers W introduced into the load lock assembly 20 to one of the processing assemblies 60, and then removes wafers W, which have undergone a desired plasma treatment in the processing assembly 60, to the atmosphere section 10 via the load lock assembly 21. Furthermore, the transport assembly 50 transports edge rings F introduced into the load lock assembly 20 to one of the processing assemblies 60, and then removes edge rings F to be replaced within the processing assembly 60 to the atmosphere section 10 via the load lock assembly 21.

[0075] The processing module 60 uses plasma to perform plasma processing, such as etching, film formation, and diffusion, on the wafer W. The processing module 60 can arbitrarily select the module that performs the desired plasma processing. Furthermore, the processing module 60 is connected to the transfer module 50 via a gate valve 61. The structure of the processing module 60 will be described later.

[0076] A conveyor device 70 for conveying wafers W or edge rings F is provided within the transport assembly 50. The conveyor device 70 includes a conveyor arm 71 as a support portion that supports and moves the wafers W or edge rings F, a rotary table 72 that rotatably supports the conveyor arm 71, and a base 73 on which the rotary table 72 is mounted. Furthermore, a guide rail 74 extending along the longitudinal direction of the transport assembly 50 is provided within the transport assembly 50. The base 73 is mounted on the guide rail 74, and the conveyor device 70 is configured to be movable along the guide rail 74.

[0077] In the transfer assembly 50, the wafer W or edge ring F held in the load lock assembly 20 is received by the transfer arm 71 and transported into the processing assembly 60. Also, the wafer W or edge ring F held in the processing assembly 60 is received by the transfer arm 71 and transported out to the load lock assembly 21.

[0078] In addition, the plasma processing system 1 has a control device 80. In one embodiment, the control device 80 processes computer-executable commands that cause the plasma processing system 1 to perform the various steps described in the present invention. The control device 80 can be configured to control other elements of the plasma processing system 1 to perform the various steps described herein. In one embodiment, a portion or all of the control device 80 can also be included in other elements of the plasma processing system 1. The control device 80 can also include, for example, a computer 90. The computer 90 can also include, for example, a processing unit (CPU: Central Processing Unit) 91, a storage unit 92, and a communication interface 93. The processing unit 91 can be configured to perform various control operations based on programs stored in the storage unit 92. The storage unit 92 can also include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 93 can also communicate with other elements of the plasma processing system 1 via a communication line such as a LAN (Local Area Network).

[0079] Next, wafer processing performed using plasma processing system 1 configured as described above will be described.

[0080] First, the wafer W is removed from the desired hoop 31a by the transport device 40 and loaded into the load lock assembly 20. When the wafer W is loaded into the load lock assembly 20, the interior of the load lock assembly 20 is sealed and depressurized. Then, the interior of the load lock assembly 20 is connected to the interior of the transfer assembly 50.

[0081] Next, the wafer W is held by the transfer device 70 and transferred from the load lock assembly 20 to the transport assembly 50 .

[0082] Next, the gate valve 61 is opened and the wafer W is transferred to the desired processing module 60 by the transfer device 70. Then, the gate valve 61 is closed and the wafer W is subjected to the desired processing in the processing module 60. The processing of the wafer W in the processing module 60 will be described later.

[0083] Next, the gate valve 61 is opened, and the wafer W is carried out from the processing module 60 by the transfer device 70. Thereafter, the gate valve 61 is closed.

[0084] Next, the wafer W is loaded into the load lock assembly 21 using the transfer device 70. When the wafer W is loaded into the load lock assembly 21, the interior of the load lock assembly 21 is sealed and then opened to the atmosphere. The interior of the load lock assembly 21 is then connected to the interior of the loader assembly 30.

[0085] Next, the wafer W is held by the transfer device 40 and returned from the load lock assembly 21 to the desired hoop 31 a via the loader assembly 30 and stored therein. Thus, a series of wafer processing in the plasma processing system 1 is completed.

[0086] The edge ring is transported between the hoop 31 b and the desired processing module 60 when the edge ring is replaced in the same manner as the wafer is transported between the hoop 31 a and the desired processing module 60 during wafer processing described above.

[0087] Next, use Figures 2 to 4 The processing component 60 will be described. Figure 2 It is a longitudinal sectional view schematically showing the structure of the processing module 60 . Figure 3 yes Figure 2 A partial enlarged view of . Figure 4 The circumferential direction of the wafer support table 101 described later is Figure 2 Partial cross-sectional views of different parts.

[0088] like Figure 2 As shown, the processing assembly 60 includes a plasma processing chamber 100 as a processing container, a gas supply unit 130, an RF (Radio Frequency) power supply unit 140, and an exhaust system 150. In addition, the processing assembly 60 also includes a gas supply unit 120 (see Figure 4 The processing assembly 60 further includes a wafer support table 101 as a substrate support table and an upper electrode showerhead 102.

[0089] Wafer support 101 is disposed in the lower region of plasma processing space 100s within depressurized plasma processing chamber 100. Upper electrode showerhead 102 is disposed above wafer support 101 and functions as a portion of the ceiling of plasma processing chamber 100.

[0090] Wafer support table 101 is configured to support wafer W in plasma processing space 100s. In one embodiment, wafer support table 101 includes a lower electrode 103, an electrostatic chuck 104, an insulator 105, lift pins 106, and lift pins 107. Although not shown, in one embodiment, wafer support table 101 may also include a temperature control unit configured to control at least one of electrostatic chuck 104 and wafer W to a target temperature. The temperature control unit may include a heater, a flow path, or a combination thereof. A temperature control fluid, such as a refrigerant or heat transfer gas, flows through the flow path.

[0091] The lower electrode 103 is formed of a conductive material such as aluminum. In one embodiment, the temperature adjustment element may also be provided on the lower electrode 103 .

[0092] The electrostatic chuck 104 is a component configured to attract and hold both the wafer W and the edge ring F using electrostatic force, and is disposed on the lower electrode 103. The upper surface of the central portion of the electrostatic chuck 104 is formed to be higher than the upper surface of the peripheral portion. The upper surface 104a of the central portion of the electrostatic chuck 104 serves as the substrate mounting surface for the wafer W, while the upper surface 104b of the peripheral portion of the electrostatic chuck 104 serves as the annular member mounting surface for the edge ring F, which is an annular member. The edge ring F is an annular member disposed so as to surround the wafer W mounted on the upper surface 104a of the central portion of the electrostatic chuck 104.

[0093] Electrode 108 for sucking and holding wafer W is provided at the center of electrostatic chuck 104, and electrode 109 for sucking and holding edge ring F is provided at the periphery of electrostatic chuck 104. Electrodes 108 and 109 are sandwiched between insulating materials.

[0094] A DC voltage from a DC power supply (not shown) is applied to the electrode 108. The electrostatic force generated thereby attracts and holds the wafer W on the upper surface 104a of the central portion of the electrostatic chuck 104. Similarly, a DC voltage from a DC power supply (not shown) is applied to the electrode 109. The electrostatic force generated thereby attracts and holds the edge ring F on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. Figure 3 As shown, the electrode 109 is a bipolar type including a pair of electrodes 109a and 109b.

[0095] In the present reference embodiment, the central portion of the electrostatic chuck 104 provided with the electrode 108 and the peripheral portion provided with the electrode 109 are integrated, but these central portion and peripheral portion may be separate bodies.

[0096] In addition, in the present reference embodiment, the electrode 109 for attracting and holding the edge ring F is a bipolar type, but may be a monopolar type.

[0097] In addition, the central portion of the electrostatic chuck 104 is formed to have a diameter smaller than that of the wafer W, for example. Figure 2 As shown, when the wafer W is placed on the upper surface 104 a , the peripheral edge of the wafer W is extended from the central portion of the electrostatic chuck 104 .

[0098] Furthermore, edge ring F has a stepped portion formed on its upper portion, with the upper surface of the outer periphery being higher than the upper surface of the inner periphery. The inner periphery of edge ring F is formed so as to dip under the peripheral edge of wafer W extending from the center of electrostatic chuck 104. In other words, the inner diameter of edge ring F is formed to be smaller than the outer diameter of wafer W.

[0099] Insulator 105 is a cylindrical member formed of ceramic or the like, and supports electrostatic chuck 104. Insulator 105 is formed, for example, to have an outer diameter equal to that of lower electrode 103, and supports the peripheral edge of lower electrode 103. Insulator 105 is disposed so that its inner peripheral surface is located radially outward of electrostatic chuck 104 relative to lifting mechanism 114, described later.

[0100] Lift pins 106 are columnar components, made of, for example, ceramic, that rise and fall by extending or retracting from upper surface 104a in the center of electrostatic chuck 104. Three or more lift pins 106 are provided at intervals along the circumference of electrostatic chuck 104, i.e., along upper surface 104a. Lift pins 106 are, for example, arranged at equal intervals along the circumference. Lift pins 106 are arranged to extend in the vertical direction.

[0101] The lift pins 106 are connected to a lift mechanism 110 that raises and lowers the lift pins 106. The lift mechanism 110 includes, for example, a support member 111 that supports the plurality of lift pins 106 and a drive unit 112 that generates a driving force to raise and lower the support member 111, thereby raising and lowering the plurality of lift pins 106. The drive unit 112 includes a motor (not shown) that generates the driving force.

[0102] Lift pins 106 are inserted through through holes 113 extending downward from upper surface 104a in the center of electrostatic chuck 104 to the bottom surface of lower electrode 103. In other words, through holes 113 are formed to penetrate the center of electrostatic chuck 104 and lower electrode 103.

[0103] Lift pins 107 are columnar components that can be raised and lowered, extending from or retracting into the upper surface 104b of the peripheral portion of the electrostatic chuck 104. They are made of, for example, alumina, quartz, or SUS. Three or more lift pins 107 are provided at intervals along the circumference of the electrostatic chuck 104, that is, along the central upper surface 104a and the peripheral upper surface 104b. Lift pins 107 are arranged, for example, at equal intervals along the circumference. Lift pins 107 are arranged to extend in the vertical direction.

[0104] The thickness of the lift pin 107 is, for example, 1 to 3 mm.

[0105] Lift pins 107 are connected to a lifting mechanism 114 that drives them. Lift mechanism 114 includes, for example, a support member 115 provided for each lift pin 107 and supporting the lift pin 107 so that it can move horizontally. Because support member 115 supports lift pin 107 so that it can move horizontally, it may include, for example, a thrust bearing. Lift mechanism 114 also includes a drive unit 116 that generates a driving force to raise and lower support member 111, thereby raising and lowering lift pin 107. Drive unit 116 includes a motor (not shown) that generates this driving force.

[0106] Lift pins 107 are inserted into through holes 117 extending downward from upper surface 104b of the peripheral portion of electrostatic chuck 104 to the bottom surface of lower electrode 103. In other words, through holes 117 are formed to penetrate the peripheral portion of electrostatic chuck 104 and lower electrode 103.

[0107] The through hole 117 is formed with a positional accuracy higher than at least the conveyance accuracy of the edge ring of the conveying device 70 .

[0108] The lifting pin 107 is formed into a cylindrical shape except for the upper end portion, and the upper end portion is formed into a hemispherical shape that gradually tapers upward. The upper end portion of the lifting pin 107 contacts the bottom surface of the edge ring F and supports the edge ring F when it rises. Figure 3 As shown, recessed portions F1 formed by upwardly depressed concave surfaces F1 a are provided at positions on the bottom surface of the edge ring F corresponding to the respective lift pins 107 .

[0109] In a plan view, the size D1 of (the opening diameter of) the recess F1 of the edge ring F is greater than the conveyance accuracy (error) (±X μm) of the edge ring F by conveyance device 70 toward the upper surface 104b of the electrostatic chuck 104, and is also greater than the size D2 of the upper end of lift pin 107. For example, D1 satisfies the relationships D1>D2 and D1>2X, and is approximately 0.5 mm. In another example, D1 may be 0.5 to 3 mm.

[0110] As described above, the upper end of lift pin 107 is formed into a hemispherical shape that tapers upward. As a result, the curvature of concave surface F1a of recess F1 forming edge ring F is set to be smaller than the convex surface (i.e., upper end surface) 107a of the upper end of lift pin 107, which forms the hemispherical shape. In other words, the radius of curvature of concave surface F1a is larger than that of convex surface 107a.

[0111] Furthermore, when the thickness of the outer peripheral portion of the edge ring F is 3 to 5 mm, the depth of the recess F1 is set to 0.5 to 1 mm, for example.

[0112] Furthermore, as the material of the edge ring F, for example, Si and SiC can be used.

[0113] In addition, if Figure 4As shown, a heat transfer gas supply path 118 is formed for the upper surface 104b of the peripheral portion of the electrostatic chuck 104. The heat transfer gas supply path 118 supplies a heat transfer gas such as helium to the back side of the edge ring F placed on the upper surface 104b. The heat transfer gas supply path 118 is configured to be fluidically connected to the upper surface 104b. In addition, the side of the heat transfer gas supply path 118 opposite to the upper surface 104b is fluidically connected to the gas supply unit 120. The gas supply unit 120 may also include one or more gas sources 121 and one or more flow controllers 122. In one embodiment, the gas supply unit 120 is configured to supply gas from the gas source 121 to the heat transfer gas supply path via the flow controller 122. Each flow controller 122 may also include, for example, a mass flow controller or a pressure-controlled flow controller.

[0114] Although not shown in the figure, heat transfer gas is also supplied to the back surface of the wafer W placed on the upper surface 104 a in the center of the electrostatic chuck 104 , thereby forming a structure similar to that of the heat transfer gas supply path 118 .

[0115] Furthermore, a suction path may be formed to vacuum-suction edge ring F placed on upper surface 104b of the peripheral portion of electrostatic chuck 104. The suction path may be provided, for example, on electrostatic chuck 104 so as to be in fluid communication with upper surface 104b. The heat transfer gas supply path and the suction path may all or partly be shared.

[0116] return Figure 2 Description. The upper electrode showerhead 102 is configured to supply one or more process gases from the gas supply portion 130 to the plasma processing space 100s. In one embodiment, the upper electrode showerhead 102 has a gas inlet 102a, a gas diffusion chamber 102b and a plurality of gas outlets 102c. The gas inlet 102a is, for example, fluidically connected to the gas supply portion 130 and the gas diffusion chamber 102b. The plurality of gas outlets 102c are fluidically connected to the gas diffusion chamber 102b and the plasma processing space 100s. In one embodiment, the upper electrode showerhead 102 is configured to supply one or more process gases from the gas inlet 102a via the gas diffusion chamber 102b and the plurality of gas outlets 102c to the plasma processing space 100s.

[0117] The gas supply unit 130 may also include one or more gas sources 131 and one or more flow controllers 132. In one embodiment, the gas supply unit 130 is configured to supply one or more process gases from corresponding gas sources 131 to the gas inlet 102a via corresponding flow controllers 132. Each flow controller 132 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 130 may also include one or more flow modulation devices for modulating or pulsing the flow of one or more process gases.

[0118] The RF power supply unit 140 is configured to supply RF power, such as one or more RF signals, to one or more electrodes, such as the lower electrode 103, the upper electrode showerhead 102, or both the lower electrode 103 and the upper electrode showerhead 102. This generates plasma from the one or more process gases supplied to the plasma processing space 100s. Therefore, the RF power supply unit 140 can function as at least a portion of a plasma generation unit configured to generate plasma from one or more process gases in the plasma processing chamber. The RF power supply unit 140, for example, includes two RF generators 141a and 141b and two matching circuits 142a and 142b. In one embodiment, the RF power supply unit 140 is configured to supply a first RF signal from the first RF generator 141a to the lower electrode 103 via the first matching circuit 142a. For example, the first RF signal may have a frequency within the range of 27 MHz to 100 MHz.

[0119] In one embodiment, the RF power supply unit 140 is configured to supply a second RF signal from a second RF generator 141b to the lower electrode 103 via a second matching circuit 142b. For example, the second RF signal may have a frequency within the range of 400 kHz to 13.56 MHz. Alternatively, a DC (direct current) pulse generator may be used in place of the second RF generator 141b.

[0120] Although not shown in the figure, another embodiment is contemplated in the present invention. For example, in an alternative embodiment, the RF power supply unit 140 may be configured to supply a first RF signal from an RF generator to the lower electrode 103, a second RF signal from another RF generator to the lower electrode 103, and a third RF signal from yet another RF generator to the lower electrode 103. Furthermore, in another alternative embodiment, a DC voltage may be applied to the upper electrode showerhead 102.

[0121] In various embodiments, the amplitude of one or more RF signals (i.e., the first RF signal, the second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may also include pulsing the RF signal amplitude between an on state and an off state, or between two or more different on states.

[0122] The exhaust system 150 may be connected to an exhaust port 100e disposed at the bottom of the plasma processing chamber 100. The exhaust system 150 may also include a pressure valve and a vacuum pump. The vacuum pump may also include a turbomolecular pump, a rough pull pump, or a combination thereof.

[0123] Next, an example of wafer processing performed using the processing module 60 having the above configuration will be described. In the processing module 60, the wafer W is subjected to processing such as etching, film formation, and diffusion.

[0124] First, a wafer W is introduced into plasma processing chamber 100, and lift pins 106 are raised and lowered to place wafer W on electrostatic chuck 104. A DC voltage is then applied to electrode 108 of electrostatic chuck 104, whereby electrostatic force electrostatically attracts and holds wafer W on electrostatic chuck 104. After wafer W is introduced, exhaust system 150 is used to reduce the pressure inside plasma processing chamber 100 to a predetermined vacuum level.

[0125] Next, the processing gas is supplied from the gas supply unit 130 via the upper electrode showerhead 102 into the plasma processing space 100s. Furthermore, the RF power supply unit 140 supplies high-frequency power HF for plasma generation to the lower electrode 103, thereby exciting the processing gas and generating plasma. At this time, the RF power supply unit 140 may also supply high-frequency power LF for ion attraction. The generated plasma then causes plasma processing on the wafer W.

[0126] Furthermore, during the plasma processing, a heat transfer gas such as He gas or Ar gas is supplied to the wafer W and the bottom surface of the edge ring F held by the electrostatic chuck 104 through the heat transfer gas supply path 118 or the like.

[0127] When plasma processing is terminated, the supply of heat transfer gas to the bottom surface of wafer W may be stopped. Furthermore, the supply of high-frequency power HF from RF power supply unit 140 and the supply of processing gas from gas supply unit 130 are stopped. If high-frequency power LF was being supplied during plasma processing, the supply of this high-frequency power LF is also stopped. Next, the attraction and holding of wafer W by electrostatic chuck 104 is stopped.

[0128] Then, the wafer W is lifted by lift pins 106 and detached from electrostatic chuck 104. During this detachment, static removal of the wafer W may also be performed. The wafer W is then unloaded from plasma processing chamber 100, completing a series of wafer processing operations.

[0129] Furthermore, edge ring F is held by electrostatic force during wafer processing, specifically, during plasma processing, and before and after plasma processing. Before and after plasma processing, different voltages are applied to electrodes 109a and 109b to create a potential difference between them. The resulting electrostatic force, corresponding to the resulting potential difference, holds edge ring F by attraction. In contrast, during plasma processing, the same voltage (e.g., a positive voltage) is applied to electrodes 109a and 109b, generating a potential difference between edge ring F, which is at ground potential, and electrodes 109a and 109b due to the plasma. The resulting electrostatic force, corresponding to the resulting potential difference, holds edge ring F by attraction. Furthermore, while edge ring F is held by electrostatic force, lift pins 107 are retracted from upper surface 104b of the peripheral portion of electrostatic chuck 104.

[0130] As described above, the edge ring F is attracted and held by electrostatic force. Therefore, when the supply of the heat transfer gas to the bottom surface of the edge ring F is started, no positional displacement occurs between the edge ring F and the electrostatic chuck 104 .

[0131] Next, an example of the installation process of the edge ring F into the processing module 60 using the plasma processing system 1 is described. Figures 5 to 7 Provide explanation. Figures 5 to 7 1 is a diagram schematically showing the state inside the processing module 60 during the mounting process. The following process is performed under the control of the control device 80. The following process is performed, for example, when the electrostatic chuck 104 is at room temperature.

[0132] First, the transfer arm 71 holding the edge ring F is inserted from the vacuum atmosphere transfer assembly 50 of the plasma processing system 1 through the inlet and outlet (not shown) into the decompressed plasma processing chamber 100 of the processing assembly 60 to which the edge ring F is to be mounted. Figure 5 As shown, edge ring F held by transfer arm 71 is transferred above upper surface 104b of the peripheral portion of electrostatic chuck 104. Edge ring F is held by transfer arm 71 with its circumferential orientation adjusted.

[0133] Next, all the lifting pins 107 are raised, as shown in FIG. Figure 6As shown, the edge ring F is transferred from the conveying arm 71 to the lifting pins 107. Specifically, all the lifting pins 107 are raised, and first, the upper ends of the lifting pins 107 abut against the bottom surface of the edge ring F held by the conveying arm 71. At this time, the upper ends of the lifting pins 107 are accommodated in the recesses F1 provided on the bottom surface of the edge ring F. This is because, as described above, the recesses F1 are provided at positions on the bottom surface of the edge ring F corresponding to the respective lifting pins 107, and in addition, when viewed from above, the size of the recesses F1 is greater than the conveying accuracy of the edge ring F of the conveying device 70, and is larger than the size of the upper ends of the lifting pins 107. When the lifting pins 107 continue to rise even after the upper ends of the lifting pins 107 abut against the bottom surface of the edge ring F, as shown in FIG. Figure 6 As shown, the edge ring F is delivered to and supported by the lift pins 107 .

[0134] As described above, the concave surface F1a of the concave portion F1 forming the edge ring F is set to have a smaller curvature than the hemispherical convex surface 107a of the upper end of the lift pin 107. Therefore, even if the edge ring F shifts relative to the lift pin 107 after it is delivered to the lift pin 107, it moves as follows and remains positioned relative to the lift pin 107. Specifically, the edge ring F moves relative to the lift pin 107 by sliding the top of the upper end of the lift pin 107 on the concave surface F1a of the edge ring F. Furthermore, the edge ring F stops at a point where the center of the concave portion F1 and the center of the upper end of the lift pin 107 coincide when viewed from above—that is, where the deepest portion of the concave portion F1 and the top of the upper end of the lift pin 107 coincide when viewed from above—and is positioned relative to the lift pin 107 at this position.

[0135] Furthermore, to facilitate the movement for positioning after the edge ring F is delivered to the lift pins 107 , the lift pins 107 may be finely moved up and down, or each lift pin 107 may be lowered at a different speed or at a high speed.

[0136] After the edge ring F is positioned relative to the lift pins 107, the transfer arm 71 is withdrawn from the plasma processing chamber 100 and the lift pins 107 are lowered, thereby Figure 7 As shown, the edge ring F is placed on the upper surface 104 a of the peripheral portion of the electrostatic chuck 104 .

[0137] The edge ring F is positioned relative to the lift pin 107 as described above. In addition, the through hole 117 and the lift pin 107 are set with high precision relative to the center of the electrostatic suction cup 104. Therefore, the edge ring F is placed on the above-mentioned upper surface 104a while being positioned relative to the center of the electrostatic suction cup 104.

[0138] Furthermore, the lowering of lift pins 107 is performed until the upper end surfaces of lift pins 107 are sunk from upper surface 104 a of the peripheral portion of electrostatic chuck 104 , for example.

[0139] Next, a DC voltage from a DC power supply (not shown) is applied to electrode 109 disposed on the periphery of electrostatic chuck 104. The electrostatic force generated thereby attracts and holds edge ring F to upper surface 104b. Specifically, different voltages are applied to electrode 109a and electrode 109b. The electrostatic force generated thereby corresponds to the potential difference, thereby attracting and holding edge ring F to upper surface 104b.

[0140] Thus, a series of edge ring F mounting processes are completed.

[0141] Furthermore, if the aforementioned air suction path is provided, the air suction path may be used to vacuum-adsorb the edge ring F onto the upper surface 104b after it is placed on the upper surface 104b and before it is held by electrostatic attraction. After switching from vacuum attraction using the air suction path to electrostatic attraction, the air suction path's vacuum level may be measured. Based on the measurement results, the edge ring F may be placed on the upper surface 104b and a decision may be made as to whether to modify the position.

[0142] The removal process of the edge ring F is performed in the reverse order of the above-mentioned installation process of the edge ring F.

[0143] In addition, when the edge ring F is removed, the edge ring F may be cleaned and then removed from the plasma processing chamber 100 .

[0144] As described above, the wafer support table 101 of this reference embodiment includes: an upper surface 104a on which a wafer W is mounted; an upper surface 104b on which an edge ring F is mounted so as to surround the wafer W held on the upper surface; three or more lift pins 107 that are raised and lowered by extending or retracting from the upper surface 104b; and a lift mechanism 114 that raises and lowers the lift pins 107. Furthermore, recesses F1 formed by upwardly recessed concave surfaces F1a are provided at positions on the bottom surface of the edge ring F corresponding to the respective lift pins 107. Furthermore, the size of the recesses F1 is larger than the conveyance error of the edge ring F above the upper surface 104b, and is larger than the size of the upper ends of the lift pins 107, when viewed from above. Therefore, when the lift pins 107 are raised and contact the bottom surface of the edge ring F, the upper ends of the lift pins 107 can be retracted into the recesses F1 of the edge ring F. Furthermore, in this reference embodiment, the upper end of lift pin 107 is formed into a hemispherical shape that tapers upward. The curvature of concave surface F1a forming concave portion F1 is smaller than the curvature of the convex surface forming the hemispherical shape at the upper end of lift pin 107. Therefore, when edge ring F is supported by lift pin 107, edge ring F can be positioned relative to lift pin 107 at a position where the deepest portion of concave portion F1 and the top of the upper end of lift pin 107 coincide when viewed from above. Consequently, when lift pin 107, which supports edge ring F, is lowered, lift pin 107 can be positioned relative to electrostatic chuck 104 and placed on upper surface 104b. In other words, according to this reference embodiment, edge ring F can be positioned and placed relative to wafer support table 101 regardless of the conveyance accuracy of edge ring F.

[0145] Furthermore, if the wafer support table 101 of this reference embodiment is installed in a plasma processing apparatus, the edge ring F can be replaced using the transport device 70 without the involvement of an operator. When an operator replaces the edge ring, the processing container in which the edge ring is mounted must be exposed to the atmosphere. However, if the wafer support table 101 of this reference embodiment is installed, the edge ring F can be replaced using the transport device 70, thereby eliminating the need to expose the plasma processing chamber 100 to the atmosphere during replacement. Therefore, according to this reference embodiment, the time required for replacement can be significantly shortened. Furthermore, in this reference embodiment, three or more lift pins are provided, thereby enabling alignment of the edge ring F not only in the radial direction (from the center of the wafer support table 101 toward the periphery) but also in the circumferential direction.

[0146] Furthermore, in this reference embodiment, each lift pin 107 is provided with a lift mechanism 114, and also includes a support member 115 that supports the lift pin 107 so that it can move horizontally. Therefore, when the electrostatic chuck 104 undergoes thermal expansion or contraction, the lift pin 107 can move horizontally in response to the thermal expansion or contraction. Consequently, the lift pin 107 is not damaged by the thermal expansion or contraction of the electrostatic chuck 104.

[0147] Furthermore, in this reference embodiment, after edge ring F is placed, it is held by electrostatic attraction using electrode 109. Therefore, there is no need to provide protrusions or recesses, etc., on the bottom surface of edge ring F or the placement surface of edge ring F (top surface 104b of electrostatic chuck 104) to prevent displacement of edge ring F after placement. In particular, since there is no need to provide protrusions or recesses, etc., on top surface 104b of electrostatic chuck 104 as described above, the complexity of the structure of electrostatic chuck 104 can be minimized.

[0148] Furthermore, in the present reference embodiment, there are no other components between the electrostatic chuck 104 of the wafer support table 101 and the edge ring F, and therefore, the accumulated tolerance is small.

[0149] Figure 8 This is a diagram for explaining another example of lift pins.

[0150] Figure 8 The lift pin 160 includes a columnar portion 162 and a connecting portion 163 in addition to a hemispherical upper end portion 161 .

[0151] The columnar portion 162 is formed in a columnar shape thicker than the upper end portion 161 . Specifically, for example, it is formed in a cylindrical shape thicker than the upper end portion 161 .

[0152] The connecting portion 163 is a portion connecting the upper end portion 161 and the columnar portion 162. The connecting portion is formed into a pyramid shape that tapers upward. Specifically, for example, it is formed into a truncated cone shape whose lower end has the same diameter as the columnar portion 162 and whose upper end has the same diameter as the upper end 161.

[0153] By using the lift pins 160 , the positioning accuracy of the edge ring F relative to the lift pins 160 can be further improved.

[0154] Furthermore, by using the above-described lift pins 107 , the recess F1 can be made shallower, and thus the edge ring F can be made thinner and lighter.

[0155] Figure 9 This is a diagram for explaining another example of an electrostatic chuck.

[0156] Figure 9Insulating guides 180 are provided in electrostatic chuck 170 in through-holes 117 through which lift pins 107 are inserted.

[0157] Guide 180 is, for example, a cylindrical member made of resin and fits into through-hole 117. In electrostatic chuck 170, lift pin 107 is inserted through guide 180 provided in through-hole 117 for use. Guide 180 dictates the vertical movement of lift pin 107 during elevation. Consequently, the upper end of lift pin 107 is positioned with greater precision relative to electrostatic chuck 170. Consequently, when lift pin 107, which is positioned and supporting edge ring F, is lowered and edge ring F is placed on upper surface 104b of electrostatic chuck 170, edge ring F can be placed on upper surface 104b while being positioned with greater precision relative to electrostatic chuck 170.

[0158] (Reference embodiment 2)

[0159] Figure 10 It is a partially enlarged cross-sectional view schematically showing the structure of a wafer support table 200 serving as a substrate support table according to the second reference embodiment.

[0160] In the reference embodiment 1, the edge ring F is the object of replacement, but in the present reference embodiment, the cover ring C is the object of replacement. The cover ring C is an annular member that covers the outer side surface of the edge ring F in the circumferential direction.

[0161] Figure 10 The wafer support table 200 includes a lower electrode 201 , an electrostatic chuck 202 , a support body 203 , an insulator 204 , and lift pins 205 .

[0162] exist Figure 2 The lower electrode 103 and the electrostatic chuck 104 shown in FIG. 1 are provided with through holes 117 to penetrate the lower electrode 103 and the electrostatic chuck 104, but the lower electrode 201 and the electrostatic chuck 202 are not provided with through holes 117. In this respect, the lower electrode 201 and the electrostatic chuck 202 are different from the lower electrode 103 and the electrostatic chuck 104.

[0163] The support body 203 is made of, for example, quartz and is formed into a ring shape in plan view, and supports the lower electrode 201 and the cover ring C. The upper surface 203a of the support body 203 serves as a ring member placement surface on which the cover ring C, which is a ring member to be replaced, is placed.

[0164] The insulator 204 is a cylindrical member made of ceramic or the like, and supports the support body 203. The insulator 204 is formed to have an outer diameter equal to that of the support body 203, and supports the peripheral edge of the support body 203.

[0165] Figure 2 Unlike lift pins 107, which are inserted through through-holes 117 extending through lower electrode 103 and electrostatic chuck 104, lift pins 205 are inserted through through-holes 206 extending vertically through support body 203 from upper surface 203a. This difference distinguishes lift pins 205 from lift pins 107. Like lift pins 107, three or more lift pins 205 are provided at intervals circumferentially around electrostatic chuck 202.

[0166] Like lift pin 107, lift pin 205 has a hemispherical upper end that tapers upward. When lifted, the upper end of lift pin 205 contacts the bottom surface of cover ring C, supporting cover ring C. Concave portions C1, formed by upwardly recessed concave surfaces C1a, are provided on the bottom surface of cover ring C at positions corresponding to lift pins 205.

[0167] The size of the recessed portion C1 of the cover ring C, in a plan view, is greater than the conveyance accuracy of the cover ring C by the conveyance device 70 and is larger than the size of the upper end portion of the lift pin 205 .

[0168] As described above, the upper end of the lift pin 205 is formed into a hemispherical shape that tapers upward. Accordingly, the concave surface C1a forming the concave portion C1 of the cover ring C is set to have a smaller curvature than the convex surface 205a forming the hemispherical shape at the upper end of the lift pin 205.

[0169] The mounting process and the removal process of the cover ring C are the same as the mounting process and the removal process of the edge ring F in the reference embodiment 1, and therefore, description thereof will be omitted.

[0170] also, Figure 2 As shown in FIG, etc., lift pins 107 for edge ring F are configured to extend from or retract into upper surface 104b of the peripheral portion of electrostatic chuck 104. Furthermore, when edge ring F is attracted by electrostatic force, the upper end surfaces of lift pins 107 retract from upper surface 104a of the peripheral portion of electrostatic chuck 104. Separately, lift pins 205 for cover ring C may be configured to extend from or retract into upper surface 203a of support body 203, provided that the extension is adjustable. Furthermore, when edge ring F is attracted by electrostatic force, the upper end surfaces of lift pins 205 may extend from upper surface 203a of support body 203.

[0171] (Reference embodiment 3)

[0172] Figure 11 It is a partially enlarged cross-sectional view schematically showing the structure of a wafer support table 300 serving as a substrate support table according to the third reference embodiment.

[0173] In the reference embodiment 1, the edge ring F is the object of replacement, and in the reference embodiment 2, the cover ring C is the object of replacement. In this reference embodiment, both the edge ring F and the cover ring C are the objects of replacement.

[0174] Furthermore, in this reference embodiment, the edge ring F and cover ring C are replaced separately. Therefore, the edge ring F is provided with lift pins 107 and through-holes 117, while the cover ring C is provided with lift pins 205 and through-holes 206. Furthermore, the aforementioned recesses F1 and C1 are formed on the bottom surfaces of the edge ring F and the bottom surfaces of the cover ring C, respectively.

[0175] The installation and removal processes of the edge ring F and the installation and removal processes of the cover ring C in this reference embodiment are the same as those of the edge ring F in the reference embodiment 1, and therefore their description is omitted.

[0176] (Present embodiment)

[0177] In Reference Embodiment 1, edge ring F is replaced, in Reference Embodiment 2, cover ring C is replaced, and in Reference Embodiment 3, both edge ring F and cover ring C are replaced. In contrast, in this embodiment, the cover ring supporting the edge ring or the edge ring itself is replaced.

[0178] That is, in this embodiment, similar to Reference Embodiment 3, both an edge ring and a cover ring are used. Furthermore, the technology of this embodiment is a technology for selectively replacing an edge ring supported by the cover ring (i.e., replacing the edge ring integrally with the cover ring) or replacing the edge ring alone when replacing the edge ring in a plasma processing system that uses both an edge ring and a cover ring.

[0179] Figure 12 It is a front view schematically showing the structure of the plasma processing system according to this embodiment.

[0180] Figure 12 The plasma processing system 1a and Figure 1 Unlike the plasma processing system 1 , the decompression unit 11 includes, in addition to the transfer assembly 50 and the processing assembly 60 , a storage assembly 62 for storing at least one of a cover ring supporting the edge ring and a jig described later used for replacement of the edge ring unit.

[0181] In the illustrated example, two storage assemblies 62 are provided for each transmission assembly 50. At least one of the two storage assemblies 62 accommodates a cover ring supporting an edge ring, while at least the other accommodates a jig. The number and arrangement of storage assemblies 62 are not limited to this embodiment and can be arbitrarily set, as long as at least one is provided.

[0182] The storage module 62 is connected to the transport module 50 via a gate valve 63. The interior of the storage module 62 is also maintained in a reduced-pressure atmosphere similarly to the interiors of the transport module 50 and the processing module 60.

[0183] In the transport assembly 50 of the plasma processing system 1a, a cover ring or jig supporting an edge ring stored in the storage assembly 62 is received by the transport arm 71 and transported to the processing assembly 60. Furthermore, in the transport assembly 50, a cover ring or jig supporting an edge ring held in the processing assembly 60 is received by the transport arm 71 and transported to the storage assembly 62.

[0184] in addition, Figure 12 Plasma processing system 1a and Figure 1 In the plasma processing system 1 of FIG. 1 , the structure of the wafer support table serving as the substrate support table within the processing module 60 is different.

[0185] Figure 13 It is a partially enlarged cross-sectional view schematically showing the structure of a wafer support table 400 serving as a substrate support table according to the present embodiment.

[0186] Figure 13 The wafer support table 400 includes a lower electrode 401 , an electrostatic chuck 402 , a support body 403 , an insulator 404 , and a lifting member 405 .

[0187] Lower electrode 401 and electrostatic chuck 402 are provided with insertion holes 406 through which lifting member 405 is inserted. Insertion holes 406 are formed to extend downward from, for example, upper surface 402a of the peripheral portion of electrostatic chuck 402 and reach the bottom surface of lower electrode 401.

[0188] In the example shown, the electrostatic chuck 402 is provided with a bipolar electrode 109 for attracting and holding the edge ring Fa, but the electrode for attracting and holding the edge ring Fa may be a monopolar electrode.

[0189] In addition, when the electrostatic chuck is provided with an electrode for adsorbing the edge ring Fa, the peripheral portion of the electrode provided for adsorbing the edge ring Fa and the central portion of the electrode 108 provided for adsorbing the wafer W in the electrostatic chuck can be integrated or separated.

[0190] The support body 403 is a member made of, for example, quartz, formed into a ring shape in plan view, and supports the lower electrode 401 .

[0191] The upper surface 403a of the support body 403 and the upper surface 402a of the peripheral portion of the electrostatic chuck 402 serve as an annular member mounting surfaces on which the cover ring Ca, one of the annular members to be replaced in this embodiment, is mounted and supported.

[0192] The insulator 404 is a cylindrical member formed of ceramic or the like, and supports the support body 403. The insulator 404 is formed to have an outer diameter equal to that of the support body 403, for example, and supports the peripheral edge portion of the support body 403.

[0193] In this embodiment, the cover ring Ca is configured to support the edge ring Fa and is formed so as to at least partially overlap the edge ring Fa when viewed from above. The cover ring Ca supports the edge ring Fa, for example, while being approximately concentric with the cover ring Ca. In one embodiment, the diameter of the innermost circumference of the cover ring Ca is smaller than the diameter of the outermost circumference of the edge ring Fa. When the cover ring Ca and the edge ring Fa are arranged approximately concentrically, the inner circumference of the cover ring Ca overlaps at least partially with the outer circumference of the edge ring Fa when viewed from above. For example, in one embodiment, the edge ring Fa has a recessed portion Fa1 that is recessed radially inward on the outer circumference of the bottom portion, and the cover ring Ca has a protrusion Ca1 that extends radially inward on the bottom portion. The edge ring Fa is supported by the engagement of the protrusion Ca1 and the recessed portion Fa1.

[0194] In addition, in this embodiment, the edge ring Fa and Figure 2 Similarly, the edge ring F has a step formed on its upper portion, the upper surface of the outer peripheral portion is formed to be higher than the upper surface of the inner peripheral portion, and the inner diameter is formed to be smaller than the outer diameter of the wafer W.

[0195] In addition, in one embodiment, in order to suppress the misalignment between the cover ring Ca and the edge ring Fa, a protrusion may be provided on one of them, and a recessed portion engaging with the protrusion may be provided on the other. Figure 14 As shown, an annular protrusion Ca2 concentric with the cover ring Ca may be formed on the upper surface of the cover ring Ca, and an annular recess Fa2 concentric with the edge ring Fa may be formed on the lower surface of the edge ring Fa at a position corresponding to the annular protrusion Ca2. The engagement between the annular protrusion Ca2 and the annular recess Fa2 can suppress misalignment between the cover ring Ca and the edge ring Fa. Alternatively, instead of the above example, an annular recess may be formed on the upper surface of the cover ring Ca and an annular protrusion may be formed on the lower surface of the edge ring Fa. These engagements can suppress misalignment between the cover ring Ca and the edge ring Fa.

[0196] In addition, the edge ring Fa can be a single body or a two-body body (ie, composed of multiple parts).

[0197] Lifting member 405 is a member capable of being raised and lowered by extending from a position on upper surface 402a of the peripheral portion of electrostatic chuck 402, where it overlaps with cover ring C when viewed from above. While extended from this position, lifting member 405 is raised and lowered, thereby supporting and raising cover ring Ca, which supports edge ring Fa. In one embodiment, lifting member 405 is a long, columnar member, similar to lift pin 107 described above.

[0198] In addition, the lifting member 405 is provided so that the jig described later utilizes the lifting pin 106 (see the Figure 16 ) is raised and lowered without hindering the raising and lowering of the jig. In addition, the lifting pins 106 are an example of a lifting member relative to the wafer W that can be raised and lowered by extending from the upper surface (i.e., substrate mounting surface) 104a of the central portion of the electrostatic chuck 402.

[0199] Lifting member 405 extends from or retracts into the upper surface 402a of the peripheral portion of electrostatic chuck 402, for example, at a position corresponding to protrusion Ca1 of cover ring Ca. Insertion hole 406, through which lifting member 405 is inserted, is formed at a position corresponding to protrusion Ca1 of cover ring Ca. In the illustrated example, lifting member 405 is a long, columnar member, so insertion hole 406 extends through electrostatic chuck 402 and lower electrode 401. However, depending on the shape of lifting member 405, insertion hole 406 may not extend through electrostatic chuck 402 and lower electrode 401.

[0200] Lifting component 405 and Figure 2 Similarly, three or more lift pins 107 are provided at intervals from each other in the circumferential direction of electrostatic chuck 402 .

[0201] The lifting mechanism for lifting the lifting member 405 may be provided for each lifting member 405 , or a common lifting mechanism may be provided for a plurality of lifting members 405 .

[0202] The lifting member 405 may also have an upper end formed into a hemispherical shape tapering upward, similar to the lifting pin 107. The upper end of the lifting member 405, for example, abuts against the bottom surface of the convex portion Ca1 of the cover ring Ca when it rises, thereby supporting the cover ring C supporting the edge ring F. Figure 15 As shown, recessed portions Ca3 formed by upwardly recessed concave surfaces Ca3a may be provided at positions corresponding to the lifting members 405 on the bottom surface of the convex portion Ca1 of the cover ring C.

[0203] When the recessed portion Ca3 is provided, its size is larger than the conveyance accuracy of the cover ring C by the conveyance device 70 and larger than the size of the upper end portion of the lifting member 405 in a plan view, for example.

[0204] In addition, as described above, when the upper end of the lifting component 405 is formed into a hemispherical shape that gradually tapers upward, the concave surface Ca3a forming the recess Ca3 can also be set to have a curvature smaller than the convex surface 405a forming the above-mentioned hemispherical shape at the upper end of the lifting component 405.

[0205] Next, an example of a process for mounting the cover ring Ca while the edge ring Fa is supported, performed using the plasma processing system 1 a , will be described.

[0206] First, the cover ring Ca supporting the edge ring Fa is removed from the storage assembly 62 and held by the transfer arm 71 of the vacuum atmosphere transfer assembly 50 of the plasma processing system 1a. Next, the transfer arm 71 holding the cover ring Ca supporting the edge ring Fa is inserted into the depressurized plasma processing chamber 100 of the processing assembly 60 to be installed via an inlet / outlet (not shown). The cover ring Ca supporting the edge ring Fa is then transferred by the transfer arm 71 above the upper surface 402a of the peripheral portion of the electrostatic chuck 402 and the upper surface 403a of the support body 403 (hereinafter sometimes referred to as the "annular member mounting surface of the wafer support table 400").

[0207] Next, all the lifting members 405 are raised, and the cover ring Ca supporting the edge ring Fa is delivered from the transport arm 71 to the lifting members 405. Specifically, all the lifting members 405 are raised, and first, the upper end of the lifting member 405 contacts the bottom surface of the cover ring Ca held by the transport arm 71. As the lifting members 405 continue to rise even after this contact, the cover ring Ca supporting the edge ring is delivered to the lifting members 405 and supported.

[0208] Then, the transfer arm 71 is withdrawn or retracted from the plasma processing chamber 100 , and the lifting member 405 is lowered, thereby placing the cover ring Ca supporting the edge ring Fa on the annular member mounting surface of the wafer support table 400 .

[0209] Thus, a series of mounting processes of the cover ring Ca supporting the edge ring Fa is completed.

[0210] Next, an example of a process for removing the cover ring Ca while the edge ring Fa is supported, performed using the plasma processing system 1 a , will be described.

[0211] First, all the lifting members 405 are raised, and the cover ring Ca supporting the edge ring Fa is transferred from the annular member mounting surface of the wafer support table 400 to the lifting members 405. Then, the lifting members 405 continue to rise, and the cover ring Ca supporting the edge ring Fa moves upward.

[0212] Next, the transfer arm 71 is inserted from the vacuum atmosphere transfer assembly 50 of the plasma processing system 1a into the depressurized plasma processing chamber 100 through the inlet and outlet port (not shown). The transfer arm 71 is then moved between the annular member mounting surface of the wafer support table 400 and the cover ring Ca supporting the edge ring Fa.

[0213] Next, the lifting member 405 is lowered, and the cover ring Ca supporting the edge ring Fa is transferred from the lifting member 405 to the transfer arm 71. The transfer arm 71 is then withdrawn from the plasma processing chamber 100, and the cover ring Ca supporting the edge ring Fa is transported out of the processing module 60. The cover ring Ca supporting the edge ring Fa is then stored in the storage module 62 by the transfer arm 71.

[0214] Thus, a series of disassembly processes of the cover ring Ca supporting the edge ring Fa are completed.

[0215] Next, use Figures 16 to 21 , an example of the disassembly process of the edge ring Fa unit using the plasma processing system 1a is described. In addition, the following process is performed under the control of the control device 80. In addition, in the installation process of the edge ring Fa unit, a jig J is used. The jig J is configured to support only the edge ring Fa without supporting the cover ring Ca. For example, it is a plate-shaped component having a portion that is longer than the inner diameter of the edge ring Fa and shorter than the inner diameter of the cover ring Ca. Specifically, the jig J is, for example, a roughly rectangular plate-shaped component having a diagonal line that is longer than the inner diameter of the edge ring Fa and shorter than the inner diameter of the cover ring Ca when viewed from above. In addition, it can also be a circular plate-shaped component with a diameter that is longer than the inner diameter of the edge ring Fa and shorter than the inner diameter of the cover ring Ca.

[0216] In the process of removing the edge ring Fa alone, first, all the lifting members 405 are raised, and the cover ring C supporting the edge ring F is transferred from the upper surface 402a of the peripheral portion of the electrostatic chuck 402 and the upper surface 403a of the support body 403 (i.e., the annular member mounting surface of the wafer support table 400) to the lifting members 405. Then, the lifting members 405 are also raised, as shown in FIG. Figure 16 As shown, the cover ring Ca supporting the edge ring Fa moves upward.

[0217] Next, the transfer arm 71 holding the jig J removed from the processing assembly 60 is inserted from the vacuum atmosphere transfer assembly 50 of the plasma processing system 1 into the decompressed plasma processing chamber 100 through the inlet and outlet (not shown). Figure 17 As shown, the jig J held by the transfer arm 71 is moved between the upper surface 402 a of the peripheral portion of the electrostatic chuck 402 , the upper surface 403 a of the support body 403 , and the cover ring Ca supporting the edge ring Fa.

[0218] Next, the lift pins 106, which are an example of a lift member, are raised relative to the wafer W, as shown in FIG. Figure 18 As shown, the jig J is delivered from the transport arm 71 to the lift pins 106 .

[0219] Next, the transfer arm 71 is withdrawn from the plasma processing chamber 100, and then the lifting member 405 and the lifting pins 106 are moved relatively. Specifically, only the lifting member 405 is lowered. Figure 19 As shown, the edge ring Fa is delivered from the cover ring Ca to the jig J. Then, only the lifting member 405 is continuously lowered, whereby the cover ring Ca is delivered from the lifting member 405 to the annular member mounting surface.

[0220] Next, the transfer arm 71 is inserted into the plasma processing chamber 100 through the transfer port (not shown). Figure 20 As shown, the transport arm 71 moves between the cover ring Ca and the jig J supporting the edge ring Fa.

[0221] Next, the lifting pin 106 is lowered, as shown in FIG. Figure 21 As shown, the jig J supporting the edge ring Fa is delivered from the lift pins 106 to the transport arm 71 .

[0222] Then, the transfer arm 71 is withdrawn from the plasma processing chamber 100 to transport the jig J supporting the edge ring Fa out of the plasma processing chamber 100. The jig J supporting the edge ring Fa is stored in the storage assembly 62 by the transfer arm 71. Thus, a series of edge ring Fa unit removal processes are completed.

[0223] Next, an example of the edge ring Fa unit installation process performed using the plasma processing system 1a will be described. The following process is performed under the control of the control device 80. As described below, the edge ring Fa unit installation process also uses a jig J, similar to the removal process.

[0224] First, the transport arm 71 of the vacuum atmosphere transport assembly 50 of the plasma processing system 1a is used to take out and hold the jig J supporting the edge ring Fa from the storage assembly 62. Next, the transport arm 71 holding the jig J supporting the edge ring Fa is inserted into the decompressed plasma processing chamber 100 of the processing assembly 60 to be installed through the inlet and outlet (not shown). Figure 22 As shown, the jig J supporting the edge ring Fa is transported by the transport arm 71 to above the upper surface 104 a of the center portion of the electrostatic chuck 402 .

[0225] Next, the lifting pin 106 is raised, as shown in FIG. Figure 23 As shown, the jig J supporting the edge ring Fa is delivered from the transport arm 71 to the lift pins 106 .

[0226] Next, the transfer arm 71 is withdrawn from the plasma processing chamber 100, and then the lifting member 405 supporting only the cover ring Ca is raised. Figure 24 As shown, the edge ring Fa is delivered from the jig J on the lift pins 106 to the cover ring Ca.

[0227] Next, the transfer arm 71 is inserted again into the plasma processing chamber 100 through the transfer port (not shown). Figure 25 As shown, the transfer arm 71 moves between the upper surface (ie, substrate placement surface) 104 a of the central portion of the electrostatic chuck 402 and the jig J.

[0228] Next, the lifting pin 106 is lowered, as shown in FIG. Figure 26 As shown, the jig J that does not support the edge ring Fa is delivered from the lift pins 106 to the transport arm 71 .

[0229] Then, the transfer arm 71 is pulled out of the plasma processing chamber 100 , and the jig J is carried out of the plasma processing chamber 100 . The jig J is stored in the storage assembly 62 by the transfer arm 71 .

[0230] In addition, the lifting member 405 is lowered, thereby Figure 27 As shown, the cover ring Ca supporting the edge ring Fa is placed astride the upper surface 402 a of the peripheral portion of the electrostatic chuck 402 and the upper surface 403 a of the support body 403 .

[0231] Thus, a series of edge ring Fa monomer disassembly processes are completed.

[0232] As described above, according to this embodiment, when replacing the edge ring Fa in a plasma processing system 1a that uses both the edge ring Fa and the cover ring Ca, it is possible to selectively perform replacement while the edge ring Fa is supported by the cover ring Ca or replacement of the edge ring alone. Furthermore, according to this embodiment, since the edge ring Fa can be replaced while supported by the cover ring Ca, that is, the edge ring Fa and the cover ring Ca can be replaced simultaneously, the time required for these replacements can be further shortened. Furthermore, since there is no need to provide a mechanism for raising and lowering the edge ring Fa, cost reduction can be achieved. Furthermore, according to this embodiment, when only the edge ring Fa needs to be replaced and the cover ring Ca does not need to be replaced, only the edge ring Fa can be replaced even without providing a mechanism for directly raising and lowering the edge ring Fa.

[0233] Alternatively, at least one of the cover ring Ca supporting the edge ring Fa and the jig J may be housed in a container placed on the load port 32 .

[0234] The edge ring is an example of a first annular component described below, and the cover ring is an example of a second annular component described below. The first annular component is an annular component configured to surround a substrate placed on a wafer support table, and the second annular component is an annular component formed so as to at least partially overlap the first annular component when viewed from above. More specifically, the second annular component is configured to support the first annular component and is formed so as to at least partially overlap the first annular component when viewed from above. The second annular component supports the first annular component, for example, while being approximately concentric with the second annular component.

[0235] The technology of this embodiment has been described above using an example of using an edge ring and a cover ring. However, the technology of this embodiment can be applied to any plasma processing system using the first annular member and the second annular member.

[0236] By applying the technology of this embodiment to a plasma processing system using these first and second annular members, when replacing the first annular member, it is possible to selectively replace the first annular member while supported by the second annular member or replace the first annular member alone.

[0237] Although various exemplary embodiments have been described above, the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. Furthermore, elements of different exemplary embodiments may be combined to form other exemplary embodiments.

[0238] In addition to the above embodiment, the following remarks are disclosed.

[0239] [Note 1]

[0240] A substrate support table comprising:

[0241] a substrate mounting surface for mounting a substrate;

[0242] an annular member mounting surface on which the annular member is mounted so as to surround the substrate held on the substrate mounting surface;

[0243] Three or more lift pins configured to extend from the annular member mounting surface and to be raised and lowered in such a manner that the amount of extension from the annular member mounting surface is adjustable; and

[0244] The lifting mechanism that raises and lowers the lifting pins.

[0245] A recessed portion formed by an upwardly recessed surface is provided at positions corresponding to the respective lift pins on the bottom surface of the annular member.

[0246] The curvature of the upper end portion of the lift pin is greater than the curvature of the recessed portion.

[0247] [Note 2]

[0248] According to the substrate supporting table described in Note 1, the opening of the recessed portion has a larger conveyance error than the annular member upwardly from the annular member placement surface when viewed from above.

[0249] [Note 3]

[0250] According to the substrate supporting table described in attachment 1 or 2, the lifting mechanism causes the lifting pins to independently move up and down.

Claims

1. A plasma processing system, characterized in that: include: A plasma processing apparatus comprising a substrate support table and a decompressible processing container in which the substrate support table can be mounted, the plasma processing apparatus performing plasma processing on a substrate on the substrate support table; a transport device having a support portion for supporting the substrate, wherein the substrate is transported into and out of the processing container by inserting or withdrawing the support portion into or out of the processing container; and control device, The substrate support table has: a substrate mounting surface for mounting the substrate; placing the annular member mounting surface of the cover ring in a state where the cover ring supports the edge ring, wherein the edge ring is arranged to surround the substrate held on the substrate mounting surface, and the cover ring covers the outer side surface of the edge ring; a lifting member that is movable upward and downward so as to extend from a portion of the annular member mounting surface that overlaps with the cover ring when viewed from above; a lifting mechanism capable of raising and lowering the lifting component; Another lifting member that is movable upward and downward so as to extend from the substrate placement surface; and Other lifting mechanisms, which can lift and lower the other lifting components, The support portion of the conveying device is configured to support the cover ring that supports the edge ring and to support a jig having a portion longer than the inner diameter of the edge ring. The control device controls the lifting mechanism, the conveying device and the other lifting mechanisms to perform the following steps: The step of raising the lifting member and transferring the cover ring supporting the edge ring from the mounting surface of the annular member to the lifting member; a step of moving the jig supported by the support portion between the substrate mounting surface, the annular member mounting surface, and the cover ring supporting the edge ring; The step of raising the other lifting member and transferring the jig from the supporting portion to the other lifting member; After the support portion retreats, the lifting component and the other lifting components are moved relative to each other to transfer the edge ring from the cover ring to the jig; a step of lowering the lifting member and transferring the cover ring from the lifting member to the annular member mounting surface; After moving the support portion between the cover ring and the jig supporting the edge ring, lowering the other lifting member to transfer the jig supporting the edge ring from the other lifting member to the support portion; and The step of extracting the support portion from the processing container to transport the jig supporting the edge ring out of the processing container.

2. A method for replacing an edge ring in a plasma processing system, characterized in that: The plasma processing system comprises: A plasma processing apparatus comprising a substrate support table and a decompressible processing container in which the substrate support table can be mounted, the plasma processing apparatus performing plasma processing on a substrate on the substrate support table; and A conveying device having a support portion for supporting the substrate, wherein the substrate is conveyed into and out of the processing container by inserting or withdrawing the support portion into or out of the processing container. The substrate support table has: a substrate mounting surface for mounting the substrate; placing the annular member mounting surface of the cover ring in a state where the cover ring supports the edge ring, wherein the edge ring is arranged to surround the substrate held on the substrate mounting surface, and the cover ring covers the outer side surface of the edge ring; a lifting member that is movable upward and downward so as to extend from a portion of the annular member mounting surface that overlaps with the cover ring in a plan view; and Another lifting member is lifted and lowered in a manner extending from the substrate mounting surface, The edge ring replacement method, in the case of only removing the edge ring, comprises the steps of removing the edge ring, The steps of removing the edge ring include: The step of raising the lifting member and transferring the cover ring supporting the edge ring from the mounting surface of the annular member to the lifting member; a step of moving a jig supported by the support portion between the substrate mounting surface, the annular member mounting surface, and the cover ring supporting the edge ring; The step of raising the other lifting member and transferring the jig from the supporting portion to the other lifting member; After the support portion retreats, the lifting component and the other lifting components are moved relative to each other to transfer the edge ring from the cover ring to the jig; a step of lowering the lifting member and transferring the cover ring from the lifting member to the annular member mounting surface; After moving the support portion between the cover ring and the jig supporting the edge ring, lowering the other lifting member to transfer the jig supporting the edge ring from the other lifting member to the support portion; and The step of extracting the support portion from the processing container to transport the jig supporting the edge ring out of the processing container.

3. The edge ring replacement method according to claim 2, characterized in that: comprising the steps of installing said edge ring, The steps of installing the edge ring include: a step of moving the jig supporting the edge ring and supported by the supporting portion toward the upper side of the substrate mounting surface; The step of raising the other lifting component and transferring the jig supporting the edge ring from the supporting portion to the other lifting component; After the support portion is retracted, the lifting member supporting only the cover ring is raised to transfer the edge ring from the jig to the cover ring; After the support portion is moved between the substrate placement surface and the jig, the other lifting member is lowered to transfer the jig from the other lifting member to the support portion; extracting the support portion from the processing container to remove the jig from the processing container; and The step of lowering the lifting member and placing the cover ring supporting the edge ring on the annular member placing surface.

4. The method for replacing an edge ring according to claim 2, wherein: comprising the steps of installing said edge ring, The steps of installing the edge ring include: a step of conveying the cover ring supported by the support portion and supporting the edge ring above the annular member placement surface; The step of raising the lifting member and transferring the cover ring supporting the edge ring from the supporting portion to the lifting member; and After the support portion is retracted, the lifting member is lowered to place the cover ring supporting the edge ring on the annular member placement surface.

5. The method for replacing an edge ring according to any one of claims 2 to 4, wherein: In case the edge ring and the cover ring are to be disassembled, the steps of disassembling the edge ring and the cover ring are included. The steps of removing the edge ring and the cover ring include: The step of raising the lifting member and transferring the cover ring supporting the edge ring from the mounting surface of the annular member to the lifting member; After the support portion is moved between the cover ring and the annular member mounting surface, the lifting member is lowered to transfer the cover ring supporting the edge ring from the lifting member to the support portion; and The step of extracting the support portion from the processing container to transport the cover ring supporting the edge ring out of the processing container.

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