Display device and method for manufacturing a display device

Abstract

A display device and a method for manufacturing the display device are provided. The display device includes a base layer; a first electrode and a second electrode on the base layer; at least one light emitting diode between the first electrode and the second electrode and emitting light; and a protective layer on the base layer and arranged to cover at least the first electrode, the second electrode and the light emitting diode, wherein the protective layer includes a base layer and a light emission pattern formed by at least a partial area of one surface of the base layer protruding.

Description

TECHNICAL FIELD

[0001] The present application relates to a display device and a method of manufacturing a display device. BACKGROUND

[0002] With the development of multimedia, display devices are becoming more important. In response to the development, various types of display devices such as organic light emitting diode (OLED) display devices, liquid crystal display (LCD) devices, etc. are being used.

[0003] A device for displaying an image of a display device includes a display panel such as an OLED panel or an LCD panel. Among the above panels, a light emitting display panel can include a light emitting element (LED). For example, the LED includes an OLED using an organic material as a fluorescent material and an inorganic LED using an inorganic material as a fluorescent material.

[0004] The inorganic LED using an inorganic semiconductor as a fluorescent material has durability in a high temperature environment and has an advantage of high blue light efficiency compared to the OLED. In addition, even in a manufacturing process that has been pointed out as a limitation of a conventional inorganic LED element, a transfer method using dielectrophoresis (DEP) has been developed. Therefore, research on an inorganic LED having excellent durability and excellent efficiency compared to the OLED is being conducted. SUMMARY

[0005] TECHNICAL PROBLEM

[0006] The present application aims to provide a display device including a plurality of light emitting elements and an insulating layer providing a propagation path for light emitted from the light emitting elements, and a method of manufacturing a display device.

[0007] The present application also aims to provide a display device having improved top emission efficiency of light emitted from a light emitting element.

[0008] It should be noted that the objects of the present application are not limited to the above-mentioned objects, and other objects of the present application will become apparent to those skilled in the art from the following description.

[0009] TECHNICAL SOLUTION

[0010] According to an embodiment, a display device includes a base layer; a first electrode and a second electrode disposed on the base layer; at least one light emitting element disposed between the first electrode and the second electrode and emitting light; and a protective layer disposed on the base layer and disposed to cover at least the first electrode, the second electrode, and the light emitting element, wherein the protective layer includes a base material layer and a light emission pattern in which at least a partial area of one surface of the base material layer protrudes.

[0011] At least a portion of the light emitted from the light-emitting element can be incident on the light-emitting pattern, and at least a portion of the incident light can be emitted from the light-emitting pattern through the surface in an upward direction.

[0012] The light emission pattern may include at least one protrusion, with at least a portion of the surface protruding from the at least one protrusion.

[0013] The protrusion may have a curved shape, with the outer surface of the curved shape protruding from the surface.

[0014] The protrusion may have a shape that extends in one direction from one surface of the substrate material layer.

[0015] The outer surface of the protrusion may have a height of the highest point protruding from the surface in the range of 10 μm to 50 μm, and a diameter in the range of 20 μm to 100 μm.

[0016] The outer surface of the protrusion may have a tangent angle with said surface in the range of 30° to 80°.

[0017] The outer surface of the protrusion can be formed to be inclined from the surface.

[0018] The substrate material layer may include a transparent insulating material.

[0019] The substrate material layer may include at least one bead; and the light emission pattern may be formed such that the at least one bead is disposed on the substrate material layer.

[0020] At least a portion of the area of ​​the at least one bead may be exposed on the surface of the matrix material layer.

[0021] At least a portion of the light emitted from the light-emitting element may be incident on the at least one bead; and the incident light is scattered in the at least one bead.

[0022] The substrate layer may include a light-emitting region, which is defined as a region in which a light-emitting element is disposed; and the substrate material layer may be configured to cover the light-emitting region on the substrate layer.

[0023] The light emission pattern can be set on at least a portion of the substrate material layer and superimposed on the light emission area.

[0024] According to another embodiment, a method of manufacturing a display device includes: preparing a first electrode and a second electrode disposed on a target substrate and a light-emitting element disposed between the first electrode and the second electrode; forming a substrate material layer disposed on the target substrate and at least covering the first electrode, the second electrode and the light-emitting element; and forming a light-emitting pattern on the substrate material layer, wherein at least a portion of a surface of the substrate material layer protrudes in the light-emitting pattern.

[0025] The light emission pattern can be set on at least a portion of the substrate material layer and superimposed on the light-emitting element.

[0026] Forming a light-emitting pattern may include pressing and molding a substrate material layer using a mold, the mold having a surface with a portion of its surface recessed.

[0027] The light emission pattern may include at least one protrusion, with at least a portion of the surface protruding from the at least one protrusion.

[0028] The substrate material layer may include at least one bead; and the light emission pattern may be formed such that the at least one bead is disposed on the substrate material layer.

[0029] In the step of forming a light-emitting pattern, at least a portion of the area of ​​the at least one bead included in the matrix material layer is exposed on the surface, such that the exposed bead forms a light-emitting pattern.

[0030] Details of other embodiments are included in the detailed description and accompanying drawings.

[0031] Beneficial effects

[0032] The display device according to the embodiment may include a protective layer, the protective layer including a light-emitting pattern protruding in at least a portion thereof, and light emitted from the light-emitting element can be emitted through the light-emitting pattern of the protective layer.

[0033] Additionally, the display device according to the embodiment may include a protective layer that provides a propagation path for light emitted from the light-emitting element, thereby improving the top emission efficiency.

[0034] The effects of the embodiments are not limited to those illustrated above, and many more effects are included in this disclosure. Attached Figure Description

[0035] Figure 1 This is a schematic perspective view illustrating a display device according to one embodiment.

[0036] Figure 2 This is a plan view showing a display device according to one embodiment.

[0037] Figure 3 It is along Figure 1 A schematic cross-sectional view taken from line Ia-Ia'.

[0038] Figure 4 yes Figure 3 A magnified view of part A.

[0039] Figure 5This is a schematic diagram of a pixel of a display device according to another embodiment.

[0040] Figure 6 It is along Figure 2 The sectional view taken from line Ⅱ-Ⅱ'.

[0041] Figure 7 This is a schematic diagram illustrating a light-emitting element according to one embodiment.

[0042] Figure 8 This is a flowchart illustrating a method for manufacturing a display device according to one embodiment.

[0043] Figures 9 to 12 This is a cross-sectional view illustrating a method of manufacturing a display device according to one embodiment.

[0044] Figure 13 This is a schematic cross-sectional view showing a protective layer according to another embodiment.

[0045] Figure 14 It is along Figure 13 A sectional view taken from line Ib-Ib'.

[0046] Figure 15 This is a schematic cross-sectional view showing a protective layer according to yet another embodiment.

[0047] Figure 16 It is along Figure 15 A sectional view taken from line Ic-Ic'.

[0048] Figure 17 This is a schematic cross-sectional view showing a protective layer including beads according to one embodiment.

[0049] Figure 18 It is along Figure 17 The sectional view taken by the line Id-Id'.

[0050] Figure 19 This is a schematic diagram illustrating light incident on a protective layer according to one embodiment.

[0051] Figure 20 and Figure 21 It shows the manufacturing process. Figure 17 A schematic diagram of the method for creating a protective layer.

[0052] Figure 22 According to another embodiment, along Figure 17 The sectional view taken by the line Id-Id'.

[0053] Figure 23 This is a schematic diagram of a light-emitting element according to another embodiment. Detailed Implementation

[0054] The invention will now be described more fully below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, the invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0055] It will also be understood that when a layer is referred to as being "on" another layer or substrate, the layer may be directly on said other layer or substrate, or there may be an intermediate layer. Throughout the specification, the same reference numerals denote the same components.

[0056] It will be understood that although the terms "first," "second," etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, a first element discussed below may be referred to as a second element without departing from the teachings of the invention. Similarly, a second element may also be referred to as a first element.

[0057] In the following description, embodiments of the invention will be described with reference to the accompanying drawings.

[0058] Figure 1 This is a schematic perspective view illustrating a display device according to one embodiment. Figure 2 This is a plan view showing a display device according to one embodiment.

[0059] Reference Figure 1 and Figure 2 The display device 1 includes a display element layer 1a and a protective layer 80. The display element layer 1a includes a light-emitting element 30 that emits light within a specific wavelength range, and the protective layer 80 is configured to completely cover the display element layer 1a. Although in Figure 1 The display element layer 1a and the protective layer 80 are shown as being spaced apart from each other, but the protective layer 80 can be formed directly on the display element layer 1a. Figure 2 This shows the view from the top. Figure 1 A plan view of display device 1, and Figure 1 Only shown Figure 2 A sub-pixel PXn in the display element layer 1a. In other words, it can be understood that... Figure 2 The protective layer 80 of the display device 1 is omitted.

[0060] The display device 1 may include a plurality of pixels PX. Each pixel PX may include one or more light-emitting elements 30 that emit light within a specific wavelength range to display a specific color.

[0061] Each pixel PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit light of a first color, the second sub-pixel PX2 may emit light of a second color, and the third sub-pixel PX3 may emit light of a third color. The first color may be red, the second color may be green, and the third color may be blue, but the invention is not limited thereto, and sub-pixels PXn may emit light of the same color. Furthermore, although each pixel PX... Figure 2 The image has been shown as comprising three sub-pixels, but the invention is not limited thereto, and each pixel PX may include more sub-pixels.

[0062] Furthermore, in this disclosure, the terms "first," "second," etc., are used to refer to each component in the assembly; however, these terms are only used to distinguish the components from each other and do not necessarily refer to corresponding components. That is, components defined as first component, second component, etc., are not necessarily limited to a specific structure or specific location, and in some cases, other numbers may be assigned to said components. Therefore, the numbering assigned to each component can be described by means of the accompanying drawings and the following description, and within the technical concept of the present invention, the first component mentioned below may be the second component.

[0063] Each sub-pixel PXn of the display device 1 may include a light-emitting area LA defined therein (see...). Figure 5 ) and NLA defined as non-luminescent regions (see Figure 5 The light-emitting region LA is defined as the area in which a light-emitting element 30, included in the display device 1, is disposed to emit light within a specific wavelength range. The non-light-emitting region NLA can be the area other than the light-emitting region LA, and can be defined as the area in which no light-emitting element 30 is disposed and which does not emit light.

[0064] The sub-pixel PXn of the display device 1 may include multiple embankments, multiple electrodes 21 and 22, and a light-emitting element 30.

[0065] Multiple electrodes 21 and 22 can be electrically connected to the light-emitting element 30 and can receive a predetermined voltage to allow the light-emitting element 30 to emit light. In addition, in order to align the light-emitting element 30, at least a portion of each of the electrodes 21 and 22 can be used to form an electric field in the sub-pixel PXn.

[0066] The plurality of electrodes 21 and 22 may include a first electrode 21 and a second electrode 22. In an example, the first electrode 21 may be an independent pixel electrode in each sub-pixel PXn, and the second electrode 22 may be a common electrode commonly connected along the sub-pixels PXn. One of the first electrode 21 and the second electrode 22 may be the anode electrode of the light-emitting element 30, and the other of the first electrode 21 and the second electrode 22 may be the cathode electrode of the light-emitting element 30. However, the invention is not limited thereto and may be contrary to the above description.

[0067] The first electrode 21 and the second electrode 22 may include electrode trunk portions 21S and 22S that extend along a first direction D1, and electrode branch portions 21B and 22B that extend and branch from the electrode trunk portions 21S and 22S along a second direction D2 that intersects the first direction D1.

[0068] The first electrode 21 may include a first electrode trunk portion 21S that extends along a first direction D1, and at least one first electrode branch portion 21B that branches from the first electrode trunk portion 21S to extend along a second direction D2.

[0069] The two ends of the first electrode trunk 21S of any pixel can be separated to terminate between sub-pixels PXn, and are configured to be substantially collinear with the first electrode trunk 21S of adjacent sub-pixels PXn belonging to the same row (e.g., sub-pixels adjacent in the first direction D1). Therefore, the first electrode trunk 21S disposed in each sub-pixel PXn can apply different electrical signals to the first electrode branch 21B, and the first electrode branch 21B can be driven individually.

[0070] The first electrode branch portion 21B branches off from at least a portion of the first electrode trunk portion 21S and is configured to extend along the second direction D2. The first electrode branch portion 21B can terminate in a state separated from the second electrode trunk portion 22S, which is configured to be opposite to the first electrode trunk portion 21S.

[0071] The second electrode 22 may include a second electrode trunk portion 22S and a second electrode branch portion 22B. The second electrode trunk portion 22S extends along a first direction D1 and is configured to be separate from and opposite to the first electrode trunk portion 21S. The second electrode branch portion 22B branches from the second electrode trunk portion 22S and is configured to extend along a second direction D2. However, one end of the second electrode trunk portion 22S may extend along the first direction D1 to a plurality of adjacent sub-pixels PXn. Therefore, both ends of the second electrode trunk portion 22S of any pixel may be connected to the second electrode trunk portions 22S of adjacent pixels PX.

[0072] The second electrode branch portion 22B can be separated from and opposite the first electrode branch portion 21B, and terminates in a state separated from the first electrode trunk portion 21S. That is, one end of the second electrode branch portion 22B can be connected to the second electrode trunk portion 22S, and the other end of the second electrode branch portion 22B can be disposed in the sub-pixel PXn in a state separated from the first electrode trunk portion 21S.

[0073] The accompanying drawings show two first electrode branch portions 21B and a second electrode branch portion 22B disposed between the two first electrode branch portions 21B, but the invention is not limited thereto.

[0074] Multiple dikes may include a third dike 43 disposed at the boundary between sub-pixels PXn, and a first dike 41 and a second dike 42 disposed below electrodes 21 and 22. Although in Figure 2 The first dike 41 and the second dike 42 are not shown, but the first dike 41 and the second dike 42 may be respectively located below the first electrode branch portion 21B and the second electrode branch portion 22B.

[0075] The third dike 43 can be disposed at the boundary between sub-pixels PXn. The ends of the plurality of first electrode trunk portions 21S can terminate by separating them from each other based on the third dike 43. The third dike 43 can extend along the second direction D2 and can be disposed at the boundary between sub-pixels PXn disposed along the first direction D1. However, the invention is not limited thereto, and the third dike 43 can extend along the first direction D1 and can even be disposed at the boundary between sub-pixels PXn disposed along the second direction D2. The third dike 43 can comprise the same material as the first dike 41 and the second dike 42 and can be formed using substantially the same process.

[0076] Despite Figure 2 Not shown in the diagram, but the first insulating layer 51 (see...) Figure 6 The first insulating layer 51 can be set in each sub-pixel PXn to completely cover each sub-pixel PXn including the first electrode branch portion 21B and the second electrode branch portion 22B. The first insulating layer 51 can protect each of the electrodes 21 and 22 while insulating the electrodes 21 and 22 from each other so that they do not come into direct contact with each other.

[0077] Multiple light-emitting elements 30 may be disposed between the first electrode branch portion 21B and the second electrode branch portion 22B. At least some of the multiple light-emitting elements 30 may have one end electrically connected to the first electrode branch portion 21B and the other end electrically connected to the second electrode branch portion 22B.

[0078] Multiple light-emitting elements 30 can be separated from each other and arranged substantially parallel to each other in the second direction D2. There is no particular limitation on the separation gap between the light-emitting elements 30. In some cases, multiple light-emitting elements 30 can be arranged adjacent to each other to form a group, and multiple other light-emitting elements 30 can be grouped in a state of being spaced apart from each other at regular intervals, can have a non-uniform density, and can be oriented and aligned in one direction.

[0079] The contact electrode 26 may be disposed on the first electrode branch portion 21B and the second electrode branch portion 22B. However, the contact electrode 26 may be substantially disposed on the first insulating layer 51, and at least a portion of the contact electrode 26 may be in contact with or electrically connected to the first electrode branch portion 21B and the second electrode branch portion 22B.

[0080] Multiple contact electrodes 26 may be configured to extend along a second direction D2 and be separated from each other in a first direction D1. Contact electrodes 26 may contact at least one end of the light-emitting element 30, and contact electrodes 26 may contact either the first electrode 21 or the second electrode 22 to receive electrical signals. Therefore, contact electrodes 26 may transmit electrical signals transmitted from each of electrodes 21 and 22 to the light-emitting element 30.

[0081] The contact electrode 26 may include a first contact electrode 26a and a second contact electrode 26b. The first contact electrode 26a may be disposed on the first electrode branch portion 21B to contact one end of the light-emitting element 30, and the second contact electrode 26b may be disposed on the second electrode branch portion 22B to contact the other end of the light-emitting element 30.

[0082] The first electrode backbone 21S and the second electrode backbone 22S can be electrically connected to the circuit element layer of the display device 1 through contact holes (e.g., first electrode contact hole CNTD and second electrode contact hole CNTS). In the accompanying drawings, a second electrode contact hole CNTS is shown formed in the second electrode backbone 22S of a plurality of sub-pixels PXn. However, the invention is not limited thereto, and in some cases, the second electrode contact hole CNTS can be formed in each sub-pixel PXn.

[0083] In addition, although in Figure 2 Not shown, but the display device 1 may include a second insulating layer 52 (see Figure 52). Figure 6 ) and a protective layer 80 configured to cover at least a portion of each of electrodes 21 and 22 and light-emitting elements 30 (see Figure 1 Its layout and structure will be described below.

[0084] The protective layer 80 is disposed on the display element layer 1a and can perform the function of protecting the components disposed on the display element layer 1a from the influence of the external environment. In addition, the protective layer 80 may include a light emission pattern 85P formed in at least a portion of the area of ​​the protective layer 80 and provide a propagation path for the light emitted from the light-emitting element 30.

[0085] Figure 3 It is along Figure 1 A schematic cross-sectional view taken from line Ia-Ia'. Figure 4 yes Figure 3 A magnified view of part A.

[0086] Reference Figure 3 and Figure 4 The protective layer 80 is configured to cover the electrodes 21 and 22 and the light-emitting element 30 disposed on the target substrate (or “substrate layer”) SUB. In the accompanying drawings, only the electrodes 21 and 22 and the light-emitting element 30 are shown among the components of the display element layer 1a; however, the invention is not limited thereto, and the display element layer 1a may include a greater number of components. It will now be described with reference to other accompanying drawings.

[0087] The protective layer 80 includes a substrate material layer 81 and a light-emitting pattern 85P. The substrate material layer 81 may be a layer constituting the protective layer 80 and may be configured to cover the entire target substrate SUB. The substrate material layer 81 is configured to cover electrodes 21 and 22 and the light-emitting element 30, thereby performing the function of protecting electrodes 21 and 22 and the light-emitting element 30. For example, to prevent external air or moisture from penetrating therein, the substrate material layer 81 may include a material with low air permeability and low moisture permeability.

[0088] The substrate material layer 81 may include a transparent insulating material. The substrate material layer 81 covering the light-emitting element 30 may include a transparent material to allow light emitted from the light-emitting element 30 to be displayed on the display device 1. Additionally, the substrate material layer 81 may be configured to cover the electrodes 21 and 22 to electrically insulate them from each other. Although not shown in the figures, the substrate material layer 81 may be configured to fill the gaps between components disposed on the display element layer 1a. Since the gaps between the light-emitting element 30 and the electrodes 21 and 22 are filled with the substrate material layer 81, the substrate material layer 81 can perform the functions of preventing damage to the light-emitting element 30 and the electrodes 21 and 22 due to other components, and of electrically insulating the light-emitting element 30 from the electrodes 21 and 22.

[0089] In an embodiment, the substrate material layer 81 may include at least one of polyester compounds, olefin compounds, acryloyl compounds, epoxy compounds, polyamide compounds, polyimide compounds, urethane compounds, and organosilicon compounds. When the substrate material layer 81 includes an organosilicon compound, the organosilicon compound may be a polysilane oxide, a polysiloxane oxide, or silicon oxide.

[0090] A light-emitting pattern 85P is formed on at least a portion of the substrate material layer 81. The light-emitting pattern 85P can be formed on the entire substrate material layer 81 and can be superimposed on areas other than the area where the light-emitting element 30 of the display element layer 1a is disposed. However, the invention is not limited thereto, and the light-emitting pattern 85P can be formed only on a portion of the substrate material layer 81. For example, the light-emitting pattern 85P can be formed superimposed on the area where the light-emitting element 30 of the display element layer 1a is disposed. A detailed description will be given with reference to other accompanying drawings.

[0091] At least a portion of the light-emitting pattern 85P according to one embodiment may include protrusions 85 projecting from the substrate material layer 81. The light-emitting pattern 85P may include a plurality of protrusions 85, and the protrusions 85 may be arranged adjacent to each other on the substrate material layer 81. However, the invention is not limited thereto, and the protrusions 85 may be arranged spaced apart from each other.

[0092] The protrusion 85 forms an outer surface TA that projects upward from a flat surface PA of the substrate material layer 81. In the example, in a cross-sectional view, the protrusion 85 may have a shape in which at least a portion of the outer surface TA is curved and extends in one direction on the substrate material layer 81. As shown in the figures, the outer surface TA of the protrusion 85 may have a circular shape protruding from a surface PA of the substrate material layer 81 and may extend in one direction on a surface PA of the substrate material layer 81. That is, the light-emitting pattern 85P including the protrusion 85 may have a lens shape.

[0093] However, the shape of the protrusion 85 is not particularly limited, as long as the light emitted from the light-emitting element 30 of the display element layer 1a can be refracted and emitted without being reflected from the substrate material layer 81. For example, a portion of the outer surface TA of the protrusion 85 can be formed as a linear slope, or it can be formed as a single unit without extending on the substrate material layer 81. In addition, the plurality of protrusions 85 included in the light-emitting pattern 85P do not necessarily have to have the same size, but can have different sizes. These will be described in more detail below with reference to other embodiments.

[0094] Simultaneously, light emitted from the light-emitting element 30 passes through the substrate material layer 81 and is incident on the interface between the substrate material layer 81 and the outside. Here, the material included in the substrate material layer 81 may have a predetermined refractive index, and the light is reflected at the interface between the substrate material layer 81 and the outside to propagate again to the display element layer 1a. At least a portion of the light emitted from the light-emitting element 30 will not be emitted from the display device 1.

[0095] On the other hand, according to one embodiment, the protective layer 80 includes a light-emitting pattern 85P formed on a substrate material layer 81, and light emitted from the light-emitting element 30 is incident on the light-emitting pattern 85P. The light-emitting pattern 85P can adjust the incident angle of light incident on the interface between the substrate material layer 81 and the outside to reduce light reflection. Therefore, it is possible to reduce the amount of light emitted from the light-emitting element 30 and then reflected in the protective layer 80, and increase the amount of light passing through and emitted from the protective layer 80. In other words, the light-emitting pattern 85P of the protective layer 80 can improve the top emission efficiency of the display device 1.

[0096] Specifically, the light emitted from the light-emitting element 30 may include a first light EL1 incident on a surface PA of the substrate material layer 81 (see...). Figure 4 ) and the second light EL2 incident on the outer surface TA of protrusion 85 (see Figure 4 ).

[0097] The first light EL1 emitted from the light-emitting element 30 can propagate towards a surface PA of the substrate material layer 81 at a first incident angle θ1. In this case, the first light EL1 incident at the first incident angle θ1 can be reflected from a surface PA of the substrate material layer 81 to propagate to the display element layer 1a (see...). Figure 4 (EL1' in the image). The reflected first light EL1' may not be emitted to the outside of the protective layer 80 but can propagate within the protective layer 80.

[0098] The second light EL2, propagating in the same direction as the first light EL1, can propagate toward the outer surface TA of the protrusion 85. Even when the second light EL2 propagates in the same manner as the first light EL1, it can also be incident at a second incident angle θ2, different from the first incident angle θ1, toward the outer surface TA, which protrudes further than one surface PA of the substrate material layer 81. In this case, the second light EL2 can be refracted and emitted without being reflected at the interface between the outer surface TA and the outside.

[0099] In other words, the protective layer 80 includes a light-emitting pattern 85P formed on the substrate material layer 81, thus increasing the amount of light emitted from the light-emitting element 30 toward the upper part of the target substrate SUB. The protective layer 80 can increase the amount of second light EL2 emitted from the light-emitting element 30 through the light-emitting pattern 85P to the outside, exceeding the amount of first light EL1 reflected from the interface between the substrate material layer 81 and the outside. According to one embodiment, the protective layer 80 can perform the function of protecting the display element layer 1a from external influences, while simultaneously providing a propagation path for the light from the light-emitting element 30 emitted from the protective layer 80, thus improving the top emission efficiency of the light-emitting element 30 in the display device 1.

[0100] The protrusions 85 of the light-emitting pattern 85P can have dimensions within a specific range to allow light emitted from the light-emitting element 30 to propagate toward the upper surface of the protective layer 80. In an example, as shown in the accompanying drawings, when the protrusions 85 of the light-emitting pattern 85P have a curved outer surface TA, the protrusions 85 can have a height dh ranging from 10 μm to 50 μm and a diameter dp ranging from 20 μm to 100 μm at the highest point of the outer surface TA.

[0101] When the height dh at the highest point of the outer surface TA is less than or equal to 10 μm, the protrusion 85 has difficulty maintaining its shape. Furthermore, when the height dh is greater than or equal to 50 μm, the total internal reflection of incident light increases, leading to a decrease in top emission efficiency. Additionally, when the diameter dp of the protrusion 85 is less than or equal to 20 μm, the number of protrusions 85 per unit area of ​​the substrate material layer 81 increases excessively, resulting in reduced light efficiency or difficulty in achieving the light emission pattern 85P. On the other hand, when the diameter dp is greater than or equal to 100 μm, moiré patterns occur.

[0102] Additionally, in the example, the tangent angle θd between the outer surface TA of the protrusion 85 and one surface PA of the substrate material layer 81 can be in the range of 30° to 80°. When the tangent angle is less than or equal to 30°, the light collection efficiency decreases, and when the tangent angle is greater than or equal to 80°, it becomes difficult to manufacture the shape of the protrusion 85. According to one embodiment, the protective layer 80 may include protrusions 85 having dimensions within the aforementioned range, thereby maximizing the ratio of light propagating towards the upper part of the protective layer 80 to light emitted from the light-emitting element 30. Meanwhile, as mentioned above, in the figures, the protrusions 85 have been shown as having the same diameter dp, the same height dh, and the same tangent angle θd, but the invention is not limited thereto. The light-emitting pattern 85P may include protrusions 85 with different diameters dp, different heights dh, and different tangent angles θd.

[0103] A light-emitting pattern 85P, including protrusions 85, can be formed by forming the material constituting the substrate material layer 81 in the manufacturing process of the protective layer 80, and then molding the material using a mold. Alternatively, a light-emitting pattern 85P can be formed by forming the material constituting the substrate material layer 81 on the display element layer 1a, and then molding the material using a mold having a shape opposite to the protrusions 85 of the light-emitting pattern 85P. This will be described in detail below.

[0104] Meanwhile, as described above, the protrusion 85 can be formed on the entire substrate material layer 81 or only in a portion of the substrate material layer 81. In the example, the protrusion 85 of the protective layer 80 can be formed to overlap with the area where the light-emitting element 30, in which the display element layer 1a is disposed.

[0105] Figure 5 This is a schematic diagram of a pixel of a display device according to another embodiment.

[0106] Reference Figure 5 In the display device 1, a plurality of light-emitting elements 30 may be disposed in each pixel PX or each sub-pixel PXn, defining a light-emitting region LA in which the light-emitting elements 30 are disposed and a non-light-emitting region NLA other than the light-emitting region LA. The light-emitting elements 30 are disposed between electrodes 21 and 22 disposed in each pixel PX or each sub-pixel PXn, defining the region in which the light-emitting elements 30 are disposed and other regions within each pixel PX or each sub-pixel PXn. In the light-emitting region LA, light is emitted from the light-emitting elements 30 and incident on the protective layer 80. A light emission pattern 85P is formed on the protective layer 80 to allow light incident on the protective layer 80 to propagate toward the upper part of the target substrate SUB.

[0107] In the example, in the protective layer 80, there is a region 85P in which a light-emitting pattern 85P is formed (see...). Figure 5 The light-emitting pattern 85P can be at least superimposed on the light-emitting region LA. That is, the light-emitting pattern 85P is formed on the substrate material layer 81 to at least superimpose on the light-emitting region LA. The light-emitting pattern 85P may not be formed on the substrate material layer 81 of the protective layer 80 in a region superimposed on the non-light-emitting region NLA, and this region may have a flat surface. Therefore, the amount of light emitted from the light-emitting element 30 and then incident on the light-emitting pattern 85P can be increased. Figure 4 The amount of the second light EL2 in the display device 1 is increased to improve the top emission efficiency of the display device 1. However, the present invention is not limited thereto, and the light emission pattern 85P can be configured to completely cover the display element layer 1a on the substrate material layer 81 by including a non-light-emitting region NLA in addition to the light-emitting region LA.

[0108] Additionally, although not shown in the accompanying drawings, a reflective material layer may be provided in an area of ​​the substrate material layer 81 where the light emission pattern 85P is not provided, to reflect light incident on a surface PA of the substrate material layer 81. Figure 4 The first light EL1 incident on a surface PA of the substrate material layer 81 can be reflected from the reflective material layer to be guided to the display element layer 1a, and then reflected again from the display element layer 1a to be incident on the light emitting pattern 85P. The first light EL1 can be reflected several times in the protective layer 80 to be emitted through the light emitting pattern 85P.

[0109] In the following description, the display element layer 1a of the display device 1 will be described in detail with reference to the other accompanying drawings.

[0110] Figure 6 It is along Figure 2 A partial sectional view of the display device taken by line Ⅱ-Ⅱ'.

[0111] Figure 6 A cross-sectional view of the first sub-pixel PX1 is shown, and the same can be applied to other pixels PX or other sub-pixels PXn. Figure 6 A cross-section through one end and the other end of any light-emitting element 30 is shown.

[0112] At the same time, despite Figure 6 Not shown, but the display device 1 may also include a circuit element layer positioned below electrodes 21 and 22. The circuit element layer may include multiple semiconductor layers and multiple conductive patterns, and may include at least one transistor and power lines. However, a detailed description thereof will be omitted below.

[0113] For reference Figure 6 The display device 1 is described in detail. The display device 1 may include a via layer 20, a light-emitting element 30, and electrodes 21 and 22 disposed on the via layer 20. A circuit element layer (not shown) may also be disposed below the via layer 20. The via layer 20 may include an organic insulating material and perform a surface planarization function.

[0114] Multiple dikes 41, 42, and 43 are disposed on the via layer 20. The multiple dikes 41, 42, and 43 can be configured to be separated from each other in each sub-pixel PXn. The multiple dikes 41, 42, and 43 may include a first dike 41 and a second dike 42 configured to be adjacent to the central portion of the sub-pixel PXn, and a third dike 43 configured at the boundary between sub-pixels PXn.

[0115] When ink is jetted using an inkjet printing apparatus during the manufacture of the display device 1, the third dike 43 can function to prevent ink from crossing the boundary of the sub-pixel PXn. Furthermore, when the display device 1 includes other components, these other components can be disposed on the third dike 43, and the third dike 43 can function to support these other components. However, the invention is not limited thereto.

[0116] The first dike 41 and the second dike 42 are configured to be separate from and opposite to each other. The first electrode 21 may be disposed on the first dike 41, and the second electrode 22 may be disposed on the second dike 42. (Refer to...) Figure 2 and Figure 6 It is understood that the first electrode branch portion 21B is disposed on the first dam 41, and the second electrode branch portion 22B is disposed on the second dam 42.

[0117] As described above, the first dike 41, the second dike 42, and the third dike 43 can be formed substantially in the same process. Therefore, dikes 41, 42, and 43 can constitute a single grid pattern. Each of the plurality of dikes 41, 42, and 43 may comprise polyimide (PI).

[0118] Each of the plurality of dams 41, 42, and 43 may have a structure in which at least a portion protrudes from the via layer 20. Dams 41, 42, and 43 may protrude upward from a flat surface on which the light-emitting element 30 is disposed, and at least a portion of each of the protruding portions may have a slope. The shape of each of the dams 41, 42, and 43 with the protruding structure is not particularly limited. As shown in the figures, the first dam 41 and the second dam 42 protrude to the same height, and the third dam 43 may have a shape that protrudes to a higher position.

[0119] Reflective layers 21a and 22a can be disposed on the first dam 41 and the second dam 42, and electrode layers 21b and 22b can be disposed on the reflective layers 21a and 22a. The reflective layers 21a and 22a and the electrode layers 21b and 22b can constitute electrodes 21 and 22.

[0120] Reflective layers 21a and 22a include a first reflective layer 21a and a second reflective layer 22a. The first reflective layer 21a may cover the first dam 41, and the second reflective layer 22a may cover the second dam 42. Portions of reflective layers 21a and 22a are electrically connected to the circuit element layer through contact holes passing through the via layer 20.

[0121] Each of the reflective layers 21a and 22a may include a material with high reflectivity to reflect light emitted from the light-emitting element 30. For example, each of the reflective layers 21a and 22a may include a material such as Ag, Cu, indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide (ITZO), but the invention is not limited thereto.

[0122] Electrode layers 21b and 22b include a first electrode layer 21b and a second electrode layer 22b. Electrode layers 21b and 22b may have a pattern substantially the same as that of reflective layers 21a and 22a. The first reflective layer 21a and the first electrode layer 21b are configured to be separate from the second reflective layer 22a and the second electrode layer 22b.

[0123] Each of electrode layers 21b and 22b comprises a transparent conductive material, so that light emitted from the light-emitting element 30 can be incident on reflective layers 21a and 22a. For example, each of electrode layers 21b and 22b may comprise a material such as ITO, IZO, or ITZO, but the invention is not limited thereto.

[0124] In some embodiments, reflective layers 21a and 22a and electrode layers 21b and 22b may form a structure in which one or more transparent conductive layers (such as ITO, IZO, or ITZO) and one or more metal layers (such as Ag or Cu) are stacked. For example, reflective layers 21a and 22a and electrode layers 21b and 22b may form an ITO / Ag / ITO / IZO stacked structure.

[0125] In some embodiments, the first electrode 21 and the second electrode 22 can be formed as a single layer. That is, the reflective layers 21a and 22a and the electrode layers 21b and 22b can be formed as a single layer to transmit electrical signals to the light-emitting element 30 while reflecting light. For example, each of the first electrode 21 and the second electrode 22 may include a conductive material with high reflectivity and may be an alloy containing Al, nickel (Ni), and lanthanum (La). However, the invention is not limited thereto.

[0126] The first insulating layer 51 is configured to partially cover the first electrode 21 and the second electrode 22. The first insulating layer 51 may be configured to cover most of the upper surfaces of the first electrode 21 and the second electrode 22, and may expose portions of the first electrode 21 and the second electrode 22. The first insulating layer 51 may be configured to partially cover the region in which the first electrode 21 and the second electrode 22 are separated, as well as the region opposite to the region in which the first electrode 21 and the second electrode 22 are separated.

[0127] The first insulating layer 51 is configured to expose the relatively flat upper surfaces of the first electrode 21 and the second electrode 22, and is configured to allow electrodes 21 and 22 to overlap with the inclined surfaces of the first embankment 41 and the second embankment 42. The first insulating layer 51 forms a flat upper surface to allow the light-emitting element 30 to be disposed, and the flat upper surface extends toward the first electrode 21 and the second electrode 22. The extended portion of the first insulating layer 51 terminates at the inclined surfaces of the first electrode 21 and the second electrode 22. Therefore, the contact electrode 26 can contact the exposed first electrode 21 and the exposed second electrode 22, and can smoothly contact the light-emitting element 30 located on the flat upper surface of the first insulating layer 51.

[0128] The first insulating layer 51 protects the first electrode 21 and the second electrode 22, and simultaneously insulates the first electrode 21 from the second electrode 22. Furthermore, the first insulating layer 51 prevents the light-emitting element 30 disposed thereon from being damaged due to direct contact with other components.

[0129] The light-emitting element 30 may be disposed on the first insulating layer 51. At least one light-emitting element 30 may be disposed on the first insulating layer 51 between the first electrode 21 and the second electrode 22. The light-emitting element 30 may include multiple layers disposed horizontally on the via layer 20.

[0130] According to one embodiment, the light-emitting element 30 of the display device 1 may include a conductive semiconductor and an active layer, and the conductive semiconductor and the active layer may be sequentially disposed on the via layer 20 in a horizontal direction. As shown in the figures, in the light-emitting element 30, a first conductivity type semiconductor 31, an active layer 33, a second conductivity type semiconductor 32, and a conductive electrode layer 37 may be sequentially disposed on the via layer 20 in a horizontal direction. However, the present invention is not limited thereto. The order of the multiple layers disposed in the light-emitting element 30 may be reversed. In some cases, when the light-emitting element 30 has another structure, the multiple layers may be disposed in a direction perpendicular to the via layer 20.

[0131] The second insulating layer 52 may be partially disposed on the light-emitting element 30. The second insulating layer 52 can protect the light-emitting element 30 and simultaneously perform the function of fixing the light-emitting element 30 during the manufacturing process of the display device 1. The second insulating layer 52 may be configured to surround the outer surface of the light-emitting element 30. That is, a portion of the material of the second insulating layer 52 may be disposed between the bottom surface of the light-emitting element 30 and the first insulating layer 51. When viewed in a plan view, the second insulating layer 52 may extend along the second direction D2 between the first electrode branch portion 21B and the second electrode branch portion 22B to have an island shape or a line shape.

[0132] Contact electrodes 26 are disposed on electrodes 21 and 22 and on the second insulating layer 52. The first contact electrode 26a and the second contact electrode 26b are spaced apart from each other on the second insulating layer 52. Therefore, the second insulating layer 52 insulates the first contact electrode 26a from the second contact electrode 26b.

[0133] The first contact electrode 26a may contact at least the first electrode 21 exposed due to the patterning of the first insulating layer 51 and at least one end of the light-emitting element 30. The second contact electrode 26b may contact at least the second electrode 22 exposed due to the patterning of the first insulating layer 51 and at least another end of the light-emitting element 30. The first contact electrode 26a and the second contact electrode 26b may contact the side surfaces of both ends of the light-emitting element 30 (e.g., the first conductivity type semiconductor 31, the second conductivity type semiconductor 32, or the conductive electrode layer 37). As described above, the first insulating layer 51 forms a flat upper surface, allowing the contact electrodes 26 to make smooth contact with the side surfaces of the light-emitting element 30.

[0134] The contact electrode 26 may include a conductive material. For example, the contact electrode 26 may include ITO, IZO, ITZO, Al, etc. However, the present invention is not limited thereto.

[0135] Each of the first insulating layer 51 and the second insulating layer 52 described above may comprise an inorganic insulating material or an organic insulating material. In an embodiment, the first insulating layer 51 may comprise, for example, silicon oxide (SiO2). x ), silicon nitride (SiN) x ), silicon oxynitride (SiO) x N y Materials such as aluminum oxide (Al2O3) and aluminum nitride (AlN) can be used. The second insulating layer 52 can be made of organic insulating materials including photoresists. However, the present invention is not limited thereto.

[0136] The protective layer 80 can be formed to completely cover the display element layer 1a, including the contact electrode 26 and the second insulating layer 52. The light emission pattern 85P of the protective layer 80 can protect the display element layer 1a from external influences and at the same time provide a propagation path for the light emitted from the light-emitting element 30 to be guided to the upper part of the display device 1. The description of the protective layer 80 is the same as that described above, so its detailed description will be omitted here.

[0137] Meanwhile, the light-emitting element 30 may include a semiconductor crystal to emit light within a specific wavelength range. The light-emitting element 30 may emit light toward the upper part of the display element layer 1a, and the light emitted from the light-emitting element 30 can be visually identified from the outside of the display device 1 through the protective layer 80.

[0138] Figure 7This is a schematic diagram illustrating a light-emitting element according to one embodiment.

[0139] The light-emitting element 30 may be a light-emitting diode (LED). Specifically, the light-emitting element 30 may be an inorganic LED having a micrometer or nanometer unit size and made of inorganic materials. The inorganic LED can be aligned between two electrodes, in which polarity is formed by creating an electric field in a specific direction between the two facing electrodes. Due to the electric field formed on the two electrodes, the light-emitting element 30 can be aligned between the two electrodes.

[0140] The light-emitting element 30 may include a semiconductor crystal doped with impurities of any conductivity type (e.g., p-type or n-type). The semiconductor crystal can receive electrical signals applied from an external power source and emit light within a specific wavelength range.

[0141] Reference Figure 7 According to one embodiment, the light-emitting element 30 may include a first conductivity type semiconductor 31, a second conductivity type semiconductor 32, an active layer 33, and an insulating film 38. Additionally, according to one embodiment, the light-emitting element 30 may also include at least one conductive electrode layer 37. Although in Figure 7 The light-emitting element 30 has been shown as including a conductive electrode layer 37, but the invention is not limited thereto. In some cases, the light-emitting element 30 may include a greater number of conductive electrode layers 37, or the conductive electrode layers 37 may be omitted. The following description of the light-emitting element 30 may apply equally even when the number of conductive electrode layers 37 changes or other structures are included.

[0142] The light-emitting element 30 can have a shape extending in one direction. The light-emitting element 30 can have the shape of a nanorod, nanowire, nanotube, etc. In embodiments, the light-emitting element 30 can be cylindrical or rod-shaped. However, the shape of the light-emitting element 30 is not limited to these and can have various shapes, such as a regular hexahedron, cuboid, hexagonal prism, etc. The plurality of semiconductors included in the light-emitting element 30, as described below, can have a structure in which the semiconductors are sequentially arranged or stacked in one direction.

[0143] According to one embodiment, the light-emitting element 30 can emit light within a specific wavelength range. In an example, the active layer 33 can emit blue light having a center wavelength range from 450 nm to 495 nm. However, the center wavelength range of blue light is not limited to the above range, and it should be understood that the center wavelength range includes all wavelength ranges that can be identified as blue in the art. Furthermore, the light emitted from the active layer 33 of the light-emitting element 30 is not limited to this, and the light can be green light having a center wavelength range from 495 nm to 570 nm or red light having a center wavelength range from 620 nm to 750 nm.

[0144] For reference Figure 8 The light-emitting element 30 is described in detail. The first conductivity type semiconductor 31 can be an n-type semiconductor having, for example, a first conductivity type. For example, when the light-emitting element 30 emits light in the blue wavelength range, the first conductivity type semiconductor 31 can include semiconductors with the chemical formula In. x Al y Ga 1-x-y A semiconductor material of type N (0≤x≤1, 0≤y≤1, and 0≤x+y≤1). For example, the semiconductor material can be one or more of InAlGaN, GaN, AlGaN, InGaN, AlN, and InN doped with n-type impurities. The first conductivity type semiconductor 31 can be doped with a first conductivity dopant. For example, the first conductivity dopant can be Si, Ge, Sn, etc. In the example, the first conductivity type semiconductor 31 can be n-GaN doped with n-type Si. The length of the first conductivity type semiconductor 31 can be in the range of 1.5 μm to 5 μm, but the present invention is not limited thereto.

[0145] A second conductivity type semiconductor 32 is disposed on the active layer 33, which will be described below. For example, the second conductivity type semiconductor 32 may be a p-type semiconductor having a second conductivity type. For example, when the light-emitting element 30 emits light in the blue or green wavelength range, the second conductivity type semiconductor 32 may include a semiconductor having the chemical formula In. x Al y Ga 1-x-y A semiconductor material of type N (0≤x≤1, 0≤y≤1, and 0≤x+y≤1). For example, the semiconductor material can be one or more of InAlGaN, GaN, AlGaN, InGaN, AlN, and InN doped with p-type impurities. The second conductivity type semiconductor 32 can be doped with a second conductivity dopant. For example, the second conductivity dopant can be Mg, Zn, Ca, Ba, etc. In the example, the second conductivity type semiconductor 32 can be p-GaN doped with p-type Mg. The length of the second conductivity type semiconductor 32 can be in the range of 0.08 μm to 0.25 μm, but the present invention is not limited thereto.

[0146] Meanwhile, although each of the first conductivity type semiconductor 31 and the second conductivity type semiconductor 32 has been shown as forming a single layer in the accompanying drawings, the invention is not limited thereto. In some cases, depending on the material of the active layer 33, each of the first conductivity type semiconductor 31 and the second conductivity type semiconductor 32 may also include a greater number of layers, such as a cladding layer or a tensile strain barrier reduction (TSBR) layer.

[0147] An active layer 33 is disposed between a first conductivity type semiconductor 31 and a second conductivity type semiconductor 32. The active layer 33 may comprise a material having a single quantum well structure or a multiple quantum well structure. When the active layer 33 comprises a material having a multiple quantum well structure, the active layer 33 may have a structure in which multiple quantum layers and multiple well layers are alternately stacked. In response to an electrical signal applied through the first conductivity type semiconductor 31 and the second conductivity type semiconductor 32, the active layer 33 may emit light due to the recombination of electron-hole pairs. As an example, when the active layer 33 emits light in the blue wavelength range, the active layer 33 may comprise a material such as AlGaN, AlInGaN, etc. Specifically, when the active layer 33 has a multiple quantum well structure in which quantum layers and well layers are alternately stacked, the quantum layers may comprise a material such as AlGaN or AlInGaN, and the well layers may comprise a material such as GaN or AlInN. In the example, the active layer 33 comprises AlGaInN as a quantum layer and AlInN as a well layer. As described above, the active layer 33 may emit blue light with a center wavelength range from 450 nm to 495 nm.

[0148] However, the present invention is not limited thereto, and the active layer 33 may have a structure in which semiconductor materials with large bandgap energy and semiconductor materials with small bandgap energy are stacked alternately, or may include different group III to group V semiconductor materials depending on the wavelength range of the emitted light. The active layer 33 is not limited to emitting light in the blue wavelength range, and in some cases, the active layer 33 may emit light in the red or green wavelength range. The length of the active layer 33 may be in the range of 0.05 μm to 0.25 μm, but the present invention is not limited thereto.

[0149] Simultaneously, light emitted from the active layer 33 can be emitted onto the outer surface and two side surfaces of the light-emitting element 30 along its length. The directionality of light emitted from the active layer 33 is not limited to one direction.

[0150] The conductive electrode layer 37 may be an ohmic contact electrode. However, the present invention is not limited thereto, and the conductive electrode layer 37 may also be a Schottky contact electrode. The conductive electrode layer 37 may include a conductive metal. For example, the conductive electrode layer 37 may include at least one selected from Al, titanium (Ti), indium (In), gold (Au), silver (Ag), ITO, IZO, and ITZO. Additionally, the conductive electrode layer 37 may include a semiconductor material doped with n-type or p-type impurities. The conductive electrode layer 37 may include the same or different materials, but the present invention is not limited thereto.

[0151] An insulating film 38 is configured to surround the outer surfaces of the plurality of semiconductors. In an example, the insulating film 38 may be configured to at least surround the outer surface of the active layer 33 and may extend in one direction along which the light-emitting element 30 extends. The insulating film 38 may be used to protect the component. For example, the insulating film 38 may be formed to surround the side surfaces of the component and expose both ends of the light-emitting element 30 in the longitudinal direction.

[0152] In the accompanying drawings, the insulating film 38 has been shown as being formed to extend along the length of the light-emitting element 30 to cover from the first conductivity type semiconductor 31 to the conductive electrode layer 37, but the invention is not limited thereto. The insulating film 38 may cover only the outer surface of some of the semiconductor layers including the active layer 33, or only a portion of the outer surface of the conductive electrode layer 37, such that a portion of the outer surface of the conductive electrode layer 37 may be exposed.

[0153] The thickness of the insulating film 38 can range from 10 nm to 1.0 μm, but the present invention is not limited thereto. Preferably, the thickness of the insulating film 38 can be 40 nm.

[0154] The insulating film 38 may include a material with insulating properties, such as SiO2. x SiN x SiO x N y AlN, Al2O3, etc. Therefore, it can prevent electrical short circuits that may occur when the active layer 33 comes into direct contact with the electrodes through which electrical signals are transmitted to the light-emitting element 30. Furthermore, since the insulating film 38 protects the outer surface of the light-emitting element 30, including the active layer 33, it can prevent degradation of luminous efficiency.

[0155] Additionally, in some embodiments, the outer surface of the insulating film 38 may be surface-treated. When manufacturing the display device 1, the light-emitting element 30 may be sprayed onto the electrode while dispersed in a predetermined ink. Here, in order to allow the light-emitting element 30 to remain dispersed in the ink without agglomerating with other adjacent light-emitting elements 30, the insulating film 38 may be hydrophobically treated or hydrophilically treated.

[0156] Meanwhile, the light-emitting element 30 can have a length l ranging from 1 μm to 10 μm or from 2 μm to 5 μm, preferably about 4 μm. Furthermore, the diameter of the light-emitting element 30 can range from 300 nm to 700 nm, and the aspect ratio of the light-emitting element 30 can range from 1.2 to 100. However, the present invention is not limited thereto, and the plurality of light-emitting elements 30 included in the display device 1 can have different diameters depending on the composition of the active layer 33. Preferably, the diameter of the light-emitting element 30 can be about 500 nm.

[0157] Hereinafter, a method for manufacturing a display device 1 according to one embodiment will be described.

[0158] Figure 8 This is a flowchart illustrating a method for manufacturing a display device according to one embodiment.

[0159] Reference Figures 9 to 12 The method of manufacturing the display device 1 includes: preparing a first electrode 21 and a second electrode 22 disposed on a target substrate SUB and a light-emitting element 30 disposed between the first electrode 21 and the second electrode 22 (S100); forming a substrate material layer 81 disposed on the target substrate SUB and at least covering the first electrode 21, the second electrode 22 and the light-emitting element 30 (S200); and forming a light-emitting pattern 85P protruding from at least a portion of one surface of the substrate material layer 81 on the substrate material layer 81 (S300).

[0160] The display device 1 according to one embodiment can be manufactured by preparing a display element layer 1a on which the light-emitting element 30 is disposed and forming a protective layer 80 covering the display element layer 1a. The protective layer 80 can be manufactured by forming a substrate material layer 81' constituting a substrate material layer 81 and then forming a light-emitting pattern 85P on the substrate material layer 81'.

[0161] Figure 9 This is a schematic diagram illustrating a method of manufacturing a display device according to one embodiment.

[0162] First, such as Figure 10 As shown, a target substrate SUB is prepared on which a first electrode 21 and a second electrode 22 are formed, and a light-emitting element 30 is disposed on the first electrode 21 and the second electrode 22 (S100). For ease of description, in the following figures, only the electrodes 21 and 22 and the light-emitting element 30 are shown on the target substrate SUB. However, the display device 1 is not limited to this, and as described above, the display device 1 may include more components, such as a dam, contact electrode 26, etc.

[0163] Simultaneously, dielectrophoresis (DEP) can be used to mount the light-emitting element 30 onto electrodes 21 and 22. A solution in which the light-emitting element 30 is dispersed is sprayed onto electrodes 21 and 22, and alternating current (AC) power is applied to electrodes 21 and 22. When AC power is applied to the first electrode 21 and the second electrode 22, an electric field is generated between the first electrode 21 and the second electrode 22, and the light-emitting element 30, which receives the dielectrophoretic force caused by the electric field, can be mounted on electrodes 21 and 22. Detailed description will be omitted.

[0164] Next, as Figure 11 As shown, a substrate material layer 81' is formed on the target substrate SUB (S200). The substrate material layer 81' may be configured to at least cover the first electrode 21, the second electrode 22, and the light-emitting element 30. In the figures, the substrate material layer 81' has been shown to completely cover the upper surface of the target substrate SUB, but the invention is not limited thereto.

[0165] A surface PA facing away from the target substrate SUB can be formed in the substrate material layer 81', and in the operation described below, a light-emitting pattern 85P can be formed on the surface PA to form a protective layer 80. The substrate material layer 81' may include a material in which the substrate material layer 81 is in an uncured state, and may include a material substantially the same as the material of the substrate material layer 81.

[0166] In the example, the matrix material layer 81' may include a material substantially the same as that of the matrix material layer 81 and may be in an uncured semi-solid state. For example, the matrix material layer 81' may be in a solution state in which the polymer matrix constituting the matrix material layer 81 is uncured. Additionally, in some cases, the matrix material layer 81' may also include materials necessary for the polymer matrix to cure and form the matrix material layer 81. For example, when the matrix material layer 81 comprises a photocurable polymer, the matrix material layer 81' may also include uncured polymer, photoinitiator, crosslinking agent, additives, etc.

[0167] Furthermore, even when forming the light-emitting pattern 85P, the thickness of the substrate material layer 81' can be such that the light-emitting element 30 of the display element layer 1a is not damaged. For example, based on the height difference of the display element layer 1a and its highest point, the substrate material layer 81' can be formed to have a thickness ranging from 1 μm to 10 mm. However, the present invention is not limited thereto.

[0168] Next, as Figure 11As shown, a light-emitting pattern 85P is formed on a substrate material layer 81' using a mold MOLD (S300). In this example, the formation of the light-emitting pattern 85P may include pressing and molding a surface PA of the substrate material layer 81' using a mold MOLD with some of its regions recessed. As shown in the figures, at least a portion of the lower surface of the mold MOLD may have a shape in which at least a portion of the lower surface of the mold MOLD is recessed. The portion of the lower surface of the mold MOLD may be recessed to have a curved shape. The recessed shape may vary depending on the light-emitting pattern 85P of the protective layer 80, and the shape of the mold MOLD is not limited to this. Figure 12 The shape of the mold MOLD can be the opposite of the shape of the protrusions 85 of the light-emitting pattern 85P of the protective layer 80.

[0169] The substrate material layer 81' is placed on the target substrate SUB in an uncured state. When one surface PA of the substrate material layer 81' is pressed using a mold MOLD, a light-emitting pattern 85P can be formed on the one surface PA of the substrate material layer 81' according to the recessed shape formed on the lower surface of the mold MOLD. The light-emitting pattern 85P may include a plurality of protrusions 85 protruding in at least some areas thereof.

[0170] Finally, as Figure 1 As shown, the mold (MOLD) is removed and the substrate material layer 81' is cured to form a protective layer 80 comprising the substrate material layer 81 and the light-emitting pattern 85P. The figures show the substrate material layer 81' being heated and cured to form the substrate material layer 81. However, the invention is not limited thereto, and as described above, when the substrate material layer 81 comprises a photocurable polymer, it can be cured by irradiation with light. The protective layer 80 of the display device 1 can be formed using the above method.

[0171] Meanwhile, as mentioned above, the shape of the light-emitting pattern 85P of the protective layer 80 is not limited to... Figure 3 and Figure 13 The shape of the light-emitting pattern 85P. The light-emitting pattern 85P may have a shape in which one surface of the light-emitting pattern 85P is tilted or a spherical shape. Another embodiment of the display device 1 will be described below.

[0172] Figure 14 This is a schematic cross-sectional view showing a protective layer according to another embodiment. Figure 13 It is along Figure 1 A sectional view taken from line Ib-Ib'.

[0173] According to one embodiment, a protective layer 80_1 includes a light-emitting pattern 85P_1 disposed on a substrate material layer 81_1, and the light-emitting pattern 85P_1 includes protrusions 85_1, at least a portion of a surface PA_1 of the substrate material layer 81_1 protruding via the protrusions 85_1. The protrusions 85_1 may form a spherical outer surface TA_1 rounded with a predetermined curvature. Figure 13 The protective layer is different from 80, in Figure 13 In the protective layer 80_1, the protrusions 85_1 of the light-emitting pattern 85P_1 may not extend in one direction, but may form spherical units. That is, in the protective layer 80_1 according to one embodiment, the light-emitting pattern 85P_1 may have a microlens shape. In addition to the protrusions 85_1 of the light-emitting pattern 85P_1 having different shapes, Figure 14 and Figure 1 The protective layer 80_1 and Figure 3 and Figure 14 The protective layer is the same as 80.

[0174] Figure 3 The protrusion 85_1 can form with Figure 3 The outer surface TA is basically the same as the outer surface TA_1, but when it is with Figure 4 In contrast, it can have a shape close to a spherical shape. When the protrusion 85_1 has a spherical shape, the height dh_1 of the outer surface TA_1 can be in the range of 10 μm to 50 μm, and the diameter dp_1 of the outer surface TA_1 can be in the range of 20 μm to 100 μm. When the height dh_1 of the outer surface TA_1 deviates from the above range, the luminous efficiency of the light emitted from the light-emitting element 30 decreases or moiré phenomenon occurs, and in some cases, the electrodes 21 and 22 of the display element layer 1a can be visually identified from the outside. In addition, when the diameter dp_1 of the outer surface TA_1 is less than or equal to 20 μm, the light incident from the light-emitting element 30 (e.g., the second light EL2 (see...)) will be affected. Figure 15 The effective angle of incidence that is not reflected from the protrusion 85_1 is reduced. According to one embodiment, the protective layer 80_1 may include protrusions 85_1 having dimensions within the above range, thereby maximizing the ratio of light propagating toward the upper part of the protective layer 80_1 to light emitted from the light-emitting element 30.

[0175] Figure 16 This is a schematic cross-sectional view showing a protective layer according to yet another embodiment. Figure 15 It is along Figure 15 A sectional view taken from line Ic-Ic'.

[0176] Reference Figure 16 and Figure 1The protrusion 85_2 can form an outer surface TA_2, which is formed by tilting from a surface PA_2 of the substrate material layer 81_2. Figure 15 The protective layer is different from 80, in Figure 15 In the protective layer 80_2, the protrusions 85_2 of the light-emitting pattern 85P_2 can form a non-bent linear outer surface TA_2. According to one embodiment, the protective layer 80_2 can have a prism shape, such that the cross-section of the light-emitting pattern 85P_2 is formed obliquely at a predetermined angle. Besides the protrusions 85_2 of the light-emitting pattern 85P_2 having different shapes, Figure 16 and Figure 1 The protective layer 80_2 and Figure 3 and Figure 16 The protective layer is the same as 80.

[0177] exist Figure 19 In the protrusion 85_2, the outer surface TA_2 can be formed into a linear shape inclined at a predetermined angle, and can have a triangular shape in cross-sectional view. In the drawings, one side of the cross-section of the protrusion 85_2 has been shown as perpendicular to one surface PA_2 of the substrate material layer 81_2, and the other side of the cross-section of the protrusion 85_2 has been shown as an inclined shape, but the invention is not limited thereto. Both sides of the outer surface TA_2 of the protrusion 85_2 can be formed to be inclined relative to one surface PA_2 of the substrate material layer 81_2.

[0178] When the outer surface TA_2 of the protrusion 85_2 is inclined and has a polygonal shape, the height dh_2 of the outer surface TA_2 can be in the range of 10 μm to 50 μm, and the diameter dp_2 of the outer surface TA_2 can be in the range of 20 μm to 100 μm. Additionally, the angle θa_2 at the point on the outer surface TA_2 of the protrusion 85_2 opposite to a surface PA_2 of the substrate material layer 81_2 can be in the range of 60° to 120° or 80° to 110°. However, the invention is not limited thereto. Since the description of the height, diameter, etc., of the protrusion 85_2 is the same as that described with reference to other embodiments, its detailed description will be omitted here.

[0179] Meanwhile, according to another embodiment, the protective layer 80 may further include beads 89_3 that scatter light. Figure 17 (as shown in the figure), and the light-emitting pattern 85P can be formed such that the beads 89_3 included in the protective layer 80 are exposed on the substrate material layer 81. That is, during the manufacture of the protective layer 80, the light-emitting pattern 85P can be formed using the beads 89_3 instead of by pressing a mold.

[0180] Figure 18 This is a schematic cross-sectional view showing a protective layer including beads according to one embodiment.Figure 17 It is along Figure 17 The sectional view taken by the line Id-Id'.

[0181] Reference Figure 18 and Figure 1 According to one embodiment, the protective layer 80_3 further includes at least one bead 89_3 disposed on the substrate material layer 81_3, and the light emission pattern 85P_3 can be formed such that at least one bead 89_3 is disposed on the substrate material layer 81_3. The protective layer 80_3 may include a plurality of beads 89_3, and the beads 89_3 may be configured to be spaced apart from each other on the substrate material layer 81_3.

[0182] At least a portion of bead 89_3 can be exposed on one surface PA_3 of the matrix material layer 81_3. Figure 17 different, Figure 14 The protective layer 80_3 can be formed without using a mold MOLD with an inverted shape having protrusions 85, such that beads 89_3 included in the substrate material layer 81_3 are partially exposed on a surface PA_3. Therefore, the light-emitting pattern 85P_3 of the protective layer 80_3 can include patterns with... Figure 19 Protrusions 85_3 of a similar shape, and protrusions 85_3 may include beads 89_3 made of a material different from that of the substrate material layer 81_3.

[0183] In the example, the plurality of beads 89_3 may have a diameter dp_3 ranging from 0.1 μm to 100 μm, and the separation distance dl_3 between the plurality of beads 89_3 may be greater than or equal to 1 μm. However, the invention is not limited thereto.

[0184] Meanwhile, according to one embodiment, bead 89_3 may include a material that scatters incident light.

[0185] Figure 19 This is a schematic diagram illustrating light incident on a protective layer according to one embodiment.

[0186] Reference Figure 19 The second light EL2 emitted from the light-emitting element 30 and guided to the light-emitting pattern 85P_3 of the protective layer 80_3 can be incident on the bead 89_3. The bead 89_3 may include scattering particles that scatter the incident light and scatter the incident second light EL2 so as to emit it toward the upper surface of the protective layer 80_3. Figure 20 The second light EL2' is scattered. Therefore, bead 89_3 can provide a propagation path for the light emitted from the light-emitting element 30, and at the same time scatter the incident light to improve the top emission efficiency of the display device 1.

[0187] In the example, bead 89_3 may include organic or inorganic materials. For example, when bead 89_3 includes organic materials, the organic materials may be at least any one of acryloyl polymers or copolymers, styrene polymers or copolymers, formaldehyde polymers or copolymers, propylene polymers or copolymers, ethylene polymers or copolymers, siloxane polymers or copolymers, urethane polymers or copolymers, methyl methacrylate polymers or copolymers, and polycarbonate polymers or copolymers. When bead 89_3 includes inorganic materials, the inorganic materials may be at least any one of silicon dioxide, zirconium oxide, calcium carbonate, barium sulfate, and titanium oxide. However, the invention is not limited thereto.

[0188] Figure 21 and Figure 17 It shows the manufacturing process. Figure 20 A schematic diagram of the method for creating a protective layer.

[0189] Reference Figure 21 and Figure 18 During the manufacture of the protective layer 80_3, in the step of forming the substrate material layer 81'_3 (S200), the substrate material layer 81'_3 may also include beads 89_3. A plurality of beads 89_3 may be included in the substrate material layer 81'_3 to remain in a dispersed state.

[0190] Subsequently, in the step of forming the substrate material layer 81_3 by curing the substrate material layer 81'_3, at least a portion of the beads 89_3 can be exposed on one surface PA_3 of the substrate material layer 81_3, and the exposed beads 89_3 can form a light-emitting pattern 85P_3 of the protective layer 80_3. Therefore, without using a separate mold MOLD, the protective layer 80_3 including the beads 89_3 can form a light-emitting pattern 85P_3 on one surface PA_3 of the substrate material layer 81_3.

[0191] at the same time, Figure 22 It is shown that at least a portion of the bead 89_3 is exposed on the substrate material layer 81_3, and the remaining portion of the bead 89_3 is disposed within the substrate material layer 81_3. However, the invention is not limited thereto, and the entire portion of the bead 89_3 may be exposed to be disposed on a surface PA_3 of the substrate material layer 81_3.

[0192] Figure 17 According to another embodiment, along Figure 22 The sectional view taken by the line Id-Id'.

[0193] Reference Figure 13According to one embodiment, the beads 89_4 of the protective layer 80_4 can be disposed on a surface PA_4 of the substrate material layer 81_4. During the curing operation of the substrate material layer 81'_3, the beads 89_4 can be fully exposed from the substrate material layer 81_4 by controlling the process time and temperature. Local areas of the beads 89_4 are not impregnated in the substrate material layer 81_4, but their entire area is exposed to the outside, thereby forming a layer with... Figure 22 The shape of protrusion 85_1 is basically the same as that of protrusion 85_4. However, in Figure 7 In this case, since the beads 89_4 containing scattering particles are disposed on one surface PA_4 of the matrix material layer 81_4, the incident light can be scattered. Further description of this will be omitted here.

[0194] Meanwhile, the display device 1 may also include a device having a similar function to... Figure 23 The light-emitting element 30 has a different structure.

[0195] Figure 23 This is a schematic diagram of a light-emitting element according to another embodiment.

[0196] Reference Figure 23 The light-emitting element 30' can be formed such that the multiple layers are not stacked in one direction, but rather each of the multiple layers surrounds the outer surface of another layer. Apart from the layers having partially different shapes from each other... Figure 7 The light-emitting element 30' and Figure 23 The light-emitting element 30 is the same. In the following text, identical content will be omitted, and differences will be described.

[0197] According to one embodiment, the first conductivity type semiconductor 31' may extend in one direction, and its two ends may be formed to be inclined toward its central portion. ​ The first conductivity type semiconductor 31' may have a shape in which a rod-shaped or cylindrical body is formed and conical ends are located on the upper and lower parts of the body. The upper end of the body may have a steeper slope than its lower end.

[0198] The active layer 33' is configured to surround the outer surface of the body of the first conductivity type semiconductor 31'. The active layer 33' may have an annular shape extending in one direction. The active layer 33' may not be formed on the upper and lower ends of the first conductivity type semiconductor 31'. That is, the active layer 33' may only contact the parallel side surface of the first conductivity type semiconductor 31'.

[0199] The second conductivity type semiconductor 32' is configured to surround the outer surface of the active layer 33' and the upper end of the first conductivity type semiconductor 31'. The second conductivity type semiconductor 32' may include an annular body extending in one direction and an upper end having an inclined side surface. That is, the second conductivity type semiconductor 32' can be in direct contact with the parallel side surface of the active layer 33' and the inclined upper end of the first conductivity type semiconductor 31'. However, the second conductivity type semiconductor 32' is not formed on the lower end of the first conductivity type semiconductor 31'.

[0200] The electrode material layer 37' is configured to surround the outer surface of the second conductivity type semiconductor 32'. That is, the shape of the electrode material layer 37' can be substantially the same as the shape of the second conductivity type semiconductor 32'. In other words, the electrode material layer 37' can be in complete contact with the outer surface of the second conductivity type semiconductor 32'.

[0201] The insulating film 38' can be configured to surround the outer surface of the electrode material layer 37' and the first conductivity type semiconductor 31'. In addition to the electrode material layer 37', the insulating film 38' can also be in direct contact with the lower end of the first conductivity type semiconductor 31' and the exposed lower end of the active layer 33' and the second conductivity type semiconductor 32'.

[0202] In summarizing the detailed description, those skilled in the art will understand that many variations and modifications can be made to the preferred embodiments without substantially departing from the principles of the invention. Therefore, the preferred embodiments of the invention disclosed are used in a general and descriptive sense only and not for limiting purposes.

Claims

1. A display device, the display device comprising: Matrix layer; The first electrode and the second electrode are disposed on the surface of the substrate layer; An insulating layer is disposed on the first electrode and the second electrode; At least one light-emitting element is disposed on the insulating layer and emits light; A first contact electrode is disposed on the first electrode and the insulating layer, and directly contacts the first electrode and the light-emitting element; The second contact electrode is disposed on the second electrode and the insulating layer, and directly contacts the second electrode and the light-emitting element; as well as A protective layer is disposed on the substrate layer and is configured to at least cover the first electrode, the second electrode, and the light-emitting element. The protective layer comprises a substrate material layer and a light-emitting pattern, wherein at least a portion of one surface of the substrate material layer protrudes in the light-emitting pattern. The insulating layer comprises a first portion and a second portion. The first portion is stacked with the light-emitting element in a first direction perpendicular to the surface of the substrate layer, and the second portion is not stacked with the light-emitting element in the first direction. The second portion of the insulating layer includes a portion disposed in the first direction between the first electrode and the first contact electrode, and In this process, at least a portion of the light emitted from the light-emitting element is incident on the light-emitting pattern, and at least a portion of the incident light is emitted from the light-emitting pattern through the surface in an upward direction.

2. The display device according to claim 1, wherein, The light emission pattern includes at least one protrusion, and at least a portion of the surface protrudes with the at least one protrusion.

3. The display device according to claim 2, wherein, The protrusion has a curved shape, and the outer surface of the curved shape protrudes from the surface.

4. The display device according to claim 3, wherein, The protrusion has a shape that extends from one surface of the matrix material layer along the first direction.

5. The display device according to claim 3, wherein, The outer surface of the protrusion has a height of the highest point protruding from the surface in the range of 10 μm to 50 μm, and a diameter in the range of 20 μm to 100 μm.

6. The display device according to claim 5, wherein, The outer surface of the protrusion has a tangent angle with the surface in the range of 30° to 80°.

7. The display device according to claim 2, wherein, The outer surface of the protrusion is formed to be inclined from the surface.

8. The display device according to claim 1, wherein, The substrate material layer includes a transparent insulating material.

9. The display device according to claim 1, wherein: The matrix material layer includes at least one bead; and The light emission pattern is formed such that at least one bead is disposed on the substrate material layer.

10. The display device according to claim 9, wherein, At least a portion of the at least one bead is exposed on one surface of the matrix material layer.

11. The display device according to claim 10, wherein: At least a portion of the light emitted from the light-emitting element is incident on at least one bead; and The incident light is scattered in at least one of the beads.

12. The display device according to claim 1, wherein: The substrate layer includes a light-emitting region, which is defined as the region in which the light-emitting element is disposed; and The substrate material layer is configured to cover the light-emitting area on the substrate layer.

13. The display device according to claim 12, wherein, The light emission pattern is disposed on at least a portion of the substrate material layer and superimposed on the light-emitting region.

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