Plasma processing apparatus

Abstract

The present application provides a kind of plasma processing device capable of generating high uniformity plasma in the circumferential direction of electrode peripheral part. The plasma processing device includes chamber, first electrode, high-frequency power supply, power supply rod, plate-shaped component and dielectric body. The first electrode is the electrode opposite to the inside of the chamber. The high-frequency power supply supplies high-frequency power to the first electrode. The power supply rod supplies high-frequency power to the center of the surface opposite to the surface of the first electrode opposite to the inside of the chamber. The plate-shaped component is a conductive plate-shaped component arranged in parallel with the surface opposite to the surface of the first electrode opposite to the inside of the chamber and grounded. The dielectric body is connected between the first electrode and the plate-shaped component, and forms a shape of rotational symmetry with respect to the center of the first electrode.

Description

TECHNICAL FIELD

[0001] The present application relates to a plasma processing apparatus. BACKGROUND

[0002] As a plasma processing apparatus, a capacitively coupled plasma processing apparatus is known, for example. In the capacitively coupled plasma processing apparatus, a pair of parallel plate electrodes (an upper electrode and a lower electrode) are arranged in a chamber, a processing gas is introduced into the chamber, and plasma of the processing gas is formed by applying high frequency to one of the electrodes. Here, in order to increase the density of the plasma, when the frequency of the high frequency applied to the electrodes is increased, a standing wave is easily generated on the surface of the electrodes due to harmonics. When the standing wave is generated, the electric field distribution on the surface of the electrodes becomes non-uniform, and the plasma density also becomes non-uniform. In order to address this, a member having conductivity is provided on the opposite side of the electrode to which the high frequency is applied from the power supply rod and is grounded, so that the inductance of the power supply rod is reduced, and the plasma density is made uniform.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENTS

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2000-331996 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present application provides a plasma processing apparatus capable of generating plasma having high uniformity in the circumferential direction of the outer peripheral portion of an electrode.

[0008] MEANS FOR SOLVING THE PROBLEMS

[0009] A plasma processing apparatus of one embodiment of the present application includes a chamber, a first electrode, a high frequency power supply, a power supply rod, a plate-shaped member, and a dielectric body. The first electrode is an electrode facing the inside of the chamber. The high frequency power supply supplies high frequency electric power to the first electrode. The power supply rod supplies high frequency electric power to the center of the surface of the first electrode on the opposite side to the surface facing the inside of the chamber. The plate-shaped member is a plate-shaped member having conductivity which is arranged in parallel to the surface of the first electrode on the opposite side to the surface facing the inside of the chamber and is grounded. The dielectric body is connected between the first electrode and the plate-shaped member and has a shape which is rotationally symmetrical with respect to the center of the first electrode.

[0010] EFFECTS OF THE INVENTION

[0011] According to the present application, plasma having high uniformity in the circumferential direction of the outer peripheral portion of an electrode can be generated. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1is a view showing an example of the plasma processing apparatus in the first embodiment of the present application.

[0013] Figure 2 is a view showing an example of the configuration of the cover member of the upper portion of the chamber in the first embodiment.

[0014] Figure 3 is a perspective view showing an example of the arrangement of the dielectric body of the upper portion of the chamber in the first embodiment.

[0015] Figure 4 is a plan view showing an example of the arrangement of the dielectric body of the upper portion of the chamber in the first embodiment.

[0016] Figure 5 is a perspective sectional view showing an example of the configuration of the upper portion of the chamber in the first embodiment.

[0017] Figure 6 is a view schematically showing an example of the supply path of high-frequency power in the upper electrode.

[0018] Figure 7 is a view schematically showing an example of the supply path of high-frequency power in the upper electrode.

[0019] Figure 8 is a view showing an example of the equivalent circuit from the power supply rod to the top plate.

[0020] Figure 9 is a view showing an example of the bias of plasma when the dielectric body in the first embodiment is arranged equidistantly in the circumferential direction.

[0021] Figure 10 is a view showing an example of the bias of plasma when the dielectric body in the comparative example is arranged in the circumferential direction.

[0022] Figure 11 is a view schematically showing an example of the supply path of high-frequency power in the first embodiment with and without the dielectric body.

[0023] Figure 12 is a view showing an example of the distribution of etching rate when the dielectric body in the first embodiment is arranged equidistantly in the circumferential direction.

[0024] Figure 13 is a view showing an example of the distribution of etching rate when the dielectric body in the comparative example is arranged in the circumferential direction.

[0025] Figure 14 is a view showing an example of the arrangement when the dielectric body in the first embodiment is arranged in an odd number.

[0026] Figure 15is a view showing an example of arrangement of the dielectric body in the first embodiment when the dielectric body is arranged in an even number.

[0027] Figure 16 is a view showing an example of arrangement of the dielectric body in the first embodiment when the dielectric body is arranged in an even number.

[0028] Figure 17 is a view showing an example of arrangement of the dielectric body in the first embodiment when the dielectric body is arranged in an even number.

[0029] Figure 18 is a view showing an example of the plasma processing apparatus in the second embodiment of the present application.

[0030] Figure 19 is a plan view showing an example of arrangement of the dielectric body in the upper portion of the chamber in the second embodiment.

[0031] Figure 20 is a plan view showing an example of arrangement of the dielectric body in the upper portion of the chamber in the second embodiment.

[0032] Figure 21 is a sectional view showing an example of arrangement of the dielectric body in the upper portion of the chamber in the second embodiment.

[0033] Figure 22 is a sectional view showing an example of arrangement of the dielectric body in the upper portion of the chamber in the second embodiment.

[0034] Figure 23 is a view showing an example of the plasma processing apparatus in the third embodiment of the present application.

[0035] Figure 24 is a view schematically showing an example of the supply path of high-frequency power caused by the presence or absence of the dielectric body in the third embodiment.

[0036] Explanation of Reference Numerals

[0037] 1, 2, 3 Plasma processing apparatus

[0038] 10, 10a, 10b Apparatus main body

[0039] 11 Chamber

[0040] 11a Plate-like member

[0041] 11d, 11g, 11j Covering member

[0042] 16 Loading table

[0043] 18 Electrostatic chuck

[0044] 34 Shower head

[0045] 36 ceiling plate

[0046] 38 base member

[0047] 40 diffusion chamber

[0048] 44, 89 power supply rod

[0049] 46, 87 matching device

[0050] 48, 48a, 88 high-frequency power source

[0051] 50, 51, 52, 55, 57, 58, 59 dielectric body

[0052] 64, 93 pipe

[0053] 66 gas supply source

[0054] 83 APC valve

[0055] 84 exhaust device

[0056] 92 flow path

[0057] 94 refrigeration unit

[0058] 100 control device

[0059] 150 LPF

[0060] 151 direct-current power source

[0061] W wafer DETAILED DESCRIPTION

[0062] Hereinafter, an embodiment of a plasma processing apparatus of the present application will be described in detail based on the drawings. Furthermore, the technology disclosed in the following embodiment is not limited thereto.

[0063] In recent years, in the plasma processing apparatus, further corresponding to the miniaturization, thus, a higher frequency (for example, 100 MHz order.) high-frequency power is required to be supplied. When the frequency is further increased, due to the configuration of the introduction pipe of the processing gas and the flow path of the cold water refrigerant existing between the opposite side of the electrode and the frame portion, the electric field distribution in the circumferential direction of the outer peripheral portion of the electrode becomes uneven, so that the plasma density sometimes becomes uneven. Especially, in the case where one part of the pipe of the introduction pipe and the flow path is made of metal, the electric field distribution easily becomes uneven. Therefore, it is expected that the plasma having high uniformity is generated in the circumferential direction of the outer peripheral portion of the electrode.

[0064] (First Embodiment)

[0065] [Configuration of Plasma Processing Apparatus 1]

[0066] Figure 1 FIG. 1 is a view showing an example of a plasma processing apparatus according to a first embodiment of the present application. The plasma processing apparatus 1 is an apparatus for performing plasma processing such as etching or film formation on a semiconductor wafer (hereinafter referred to as a wafer) as an example of a processed object. The plasma processing apparatus 1 includes an apparatus main body 10 and a control apparatus 100. The plasma processing apparatus 1 is arranged in a clean room in which the temperature and humidity of air are controlled to a predetermined range or the like.

[0067] The apparatus main body 10 has a substantially cylindrical chamber 11 made of, for example, aluminum subjected to an anodizing treatment on the surface. The chamber 11 is securely grounded. A cylindrical support table 14 is arranged on the bottom of the chamber 11, for example, through a cylindrical support member 26 made of quartz or the like, and a placement table 16 made of, for example, aluminum is provided on the support table 14. The placement table 16 also functions as a lower electrode.

[0068] An electrostatic chuck 18 for adsorbing and holding the wafer W by electrostatic force is provided on the upper surface of the placement table 16. The electrostatic chuck 18 has a configuration in which an electrode 20 made of a conductive film is sandwiched by a pair of insulating layers or insulating sheets. The electrode 20 is electrically connected to a direct current power supply 22. The wafer W is adsorbed and held on the upper surface of the electrostatic chuck 18 by electrostatic force such as Coulomb force generated on the upper surface of the electrostatic chuck 18 by a direct current voltage applied from the direct current power supply 22.

[0069] A conductive edge ring 24 formed of, for example, silicon for improving the uniformity of etching is arranged at a position on the upper surface of the placement table 16 around the electrostatic chuck 18. A support member 26 is arranged on the side surfaces of the placement table 16 and the support table 14.

[0070] A flow path 28 is provided inside the support table 14, and a refrigerant from a refrigeration unit provided outside the chamber 11 is supplied to the flow path 28 through a pipe 30a. In addition, the refrigerant supplied to the flow path 28 is returned to the refrigeration unit through a pipe 30b. The refrigeration unit controls the temperature of the refrigerant supplied to the flow path 28. The temperature-controlled refrigerant circulates in the flow path 28, and the temperature of the support table 14 can be controlled, and the temperature of the wafer W on the electrostatic chuck 18 can be controlled through the placement table 16 and the electrostatic chuck 18 on the support table 14.

[0071] A pipe 32 is provided inside the support table 14, the placement table 16, and the electrostatic chuck 18. Heat transfer gas supplied from a heat transfer gas supply mechanism not shown to the pipe 32 is supplied to the space between the wafer W and the electrostatic chuck 18 through the pipe 32. The heat transfer gas is, for example, helium gas. The pressure of the heat transfer gas supplied to the space between the wafer W and the electrostatic chuck 18 is controlled, and thus the heat transfer rate between the wafer W and the electrostatic chuck 18 can be controlled.

[0072] A shower head 34 is disposed above the stage 16 in substantially parallel opposition to the stage 16. The shower head 34 also functions as an upper electrode. That is, the shower head 34 and the stage 16 function as a pair of electrodes (upper and lower electrodes or first and second electrodes). The space between the shower head 34 and the stage 16 becomes a plasma generation space.

[0073] The shower head 34 is supported at the upper portion of the chamber 11 via an insulating shielding member 42. The shower head 34 includes a top plate 36 disposed in opposition to the stage 16 and a base member 38 which supports the top plate 36 from above.

[0074] A plurality of discharge holes 37 which pass through in the thickness direction and which discharge a processing gas into the chamber 11 are formed in the top plate 36. The top plate 36 is formed of, for example, silicon, SiC or the like.

[0075] The base member 38 is formed of, for example, an electrically conductive material such as aluminum which is subjected to an anodizing treatment on the surface and detachably supports the top plate 36 at the lower portion thereof. A diffusion chamber 40 for supplying a processing gas to the plurality of discharge holes 37 is formed in the inside of the base member 38. A plurality of through holes 41 are formed in the bottom portion of the base member 38 in a manner so as to be located at the lower portion of the diffusion chamber 40. The plurality of through holes 41 each communicate with the plurality of discharge holes 37.

[0076] A guide inlet 62 for introducing a processing gas into the diffusion chamber 40 is formed in the base member 38. The guide inlet 62 is connected to one end of a dielectric body 51 having a through hole. The other end of the dielectric body 51 is connected to one end of a pipe 64 via a guide inlet provided in the plate-like member 11a. The other end of the pipe 64 is connected to a gas supply source 66 which supplies a processing gas. A mass flow controller (MFC) 67 and a valve 68 are provided in this order from the upstream side of the pipe 64. In the case where a wafer W on the electrostatic chuck 18 is subjected to a plasma process, a processing gas supplied from the gas supply source 66 is supplied into the diffusion chamber 40 via the pipe 64 and the through hole of the dielectric body 51, diffuses in the diffusion chamber 40. The processing gas which has diffused in the diffusion chamber 40 is supplied into the chamber 11 in a shower-like manner via the through holes 41 and the discharge holes 37.

[0077] In addition, a flow path 92 is provided inside the base member 38, and a refrigerant from a refrigeration unit 94 provided outside the chamber 11 is supplied inside the flow path 92 via a pipe 93 and a dielectric body 52 having a through-hole. One end of the dielectric body 52 is connected to the flow path 92. The other end of the dielectric body 52 is connected to the pipe 93 via a guide port provided in the plate-like member 11a. In the following description, the dielectric bodies 51, 52 are not distinguished from each other, and are referred to as a dielectric body 50. In addition, the dielectric bodies 51, 52 and the dielectric body 50 are the same in shape and material. The material of the dielectric body 50 is not particularly limited as long as the dielectric constant of each of the materials is the same or similar, and for example, a fluororesin such as PPS (Poly Phenylene Sulfide), PTFE (Poly Tetra Fluoro Ethylene), or the like can be used. In addition, the dielectric body 50 is an example of each of a plurality of portions of the dielectric body in a case where a plurality of dielectric bodies 50 are collectively referred to as a dielectric body.

[0078] The refrigerant supplied from the refrigeration unit 94 to the flow path 92 of the base member 38 via the pipe 93 and the through-hole of the dielectric body 52 circulates inside the flow path 92, and returns to the refrigeration unit 94 via the through-hole of the dielectric body 52 and the pipe 93. The refrigeration unit 94 controls the temperature of the refrigerant supplied to the flow path 92. The refrigeration unit 94 is an example of a temperature control portion. The refrigerant after the temperature control circulates inside the flow path 92, and the temperature increase of the shower head 34 due to the heat input from the plasma generated between the placement table 16 and the shower head 34 can be suppressed.

[0079] The temperature of the refrigerant circulating inside the flow path 92 is a temperature lower than the dew point temperature of the outside air of the chamber 11. In the present embodiment, the temperature of the refrigerant is, for example, a temperature of 0°C or lower. The base member 38 in which the flow path 92 is formed is an example of a cooling portion.

[0080] In addition, an RF (Radio Frequency) introduction portion 44a is provided in the base member 38, and is electrically connected to a high-frequency power source 48 via a power supply rod 44 and a matcher 46. In the present embodiment, the power supply rod 44 is a hollow cylindrical member made of a conductive metal such as aluminum. The high-frequency power source 48 is a power source for generating plasma, and generates high-frequency electric power of a frequency of 13.56 MHz or more, for example, 60 MHz to 100 MHz. The high-frequency electric power generated by the high-frequency power source 48 is supplied to the base member 38 via the matcher 46 and the power supply rod 44. The matcher 46 matches the internal (or output) impedance of the high-frequency power source 48 to the load impedance. The matcher 46 functions so that the output impedance of the high-frequency power source 48 and the load impedance match when plasma is generated in the chamber 11. The output terminal of the matcher 46 is electrically connected to the upper end of the power supply rod 44.

[0081] The shower head 34 and the power feeding rod 44 are covered by a substantially cylindrical cover member 1 Id disposed above the side wall of the chamber 11. The cover member 1 Id is made of an electrically conductive material such as aluminum and is grounded via the chamber 11. Thus, leakage of high frequency power supplied to the shower head 34 to the outside of the device main body 10 can be suppressed. The cover member 1 Id has a plate-shaped member 1 la, a cylindrical member 1 lb, and a wall member 1 lc. The plate-shaped member 1 la is disposed at the top wall portion of the cover member 1 Id and is substantially parallel to the shower head 34. The cylindrical member 1 lb covers the periphery of the power feeding rod 44 and connects the plate-shaped member 1 la and the matching unit 46. The wall member 1 lc is connected to the plate-shaped member 1 la from the upper end portion of the side wall of the chamber 11. The plate-shaped member 1 la is provided with a lead-in port for connection to the pipe 64 and the pipe 93 via the dielectric body 51 and the dielectric body 52. The power feeding rod 44 passes through the center portion of the cylindrical member 1 lb and connects the pedestal member 38 and the matching unit 46. Further, the space covered by the cover member 1 Id is under atmospheric pressure.

[0082] The stage 16 functioning as the lower electrode is electrically connected to a high frequency power source 88 via a power feeding rod 89 and a matching unit 87. The high frequency power source 88 is an ion introduction (biasing) power source and supplies high frequency power of a frequency in the range of 300 kHz to 13.56 MHz, for example, 2 MHz, to the stage 16. The matching unit 87 matches the internal (or output) impedance of the high frequency power source 88 to the load impedance. The matching unit 87 functions so that the internal impedance of the high frequency power source 88 and the load impedance show agreement when plasma is generated in the chamber 11.

[0083] An exhaust port 80 is provided at the bottom of the chamber 11. The exhaust port 80 is connected to an exhaust device 84 via an exhaust pipe 82 and an APC valve (Auto Pressure Control valve) 83. The exhaust device 84 has a vacuum pump such as a turbo molecular pump and can reduce the pressure in the chamber 11 to a desired degree of vacuum. The APC valve 83 adjusts the pressure in the chamber 11.

[0084] An opening 85 for carrying in and out the wafer W is provided in the side wall of the chamber 11 and is opened and closed by a gate valve 86. In addition, a deposit shield 12 for preventing etching by-products (deposits) from adhering to the chamber 11 is detachably provided at the inner side wall of the chamber 11. The deposit shield 12 is also provided at the outer periphery of the support member 26. An exhaust plate 81 is provided at the bottom of the chamber 11, between the deposit shield 12 at the side wall side of the chamber 11 and the deposit shield 12 at the support member 26 side. As the deposit shield 12 and the exhaust plate 81, a member in which aluminum is covered with a ceramic such as Y2O3 can be suitably used.

[0085] In a position substantially the same height as the wafer W of the deposition shield 12 arranged along the inner wall of the chamber 11, a GND block 91 made of an electrically conductive member is provided which is connected to the ground. By the GND block 91, abnormal discharge in the chamber 11 can be prevented.

[0086] The constitution device main body 10 as described above is controlled uniformly by the control device 100. The control device 100 has a processor, a memory, and an input / output interface. In the memory, a program and a processing scheme, etc. are stored. The processor executes the program read from the memory, and controls each part of the device main body 10 according to the processing scheme read from the memory via the input / output interface.

[0087] In the plasma processing device 1 constituted as described above, in the case where the wafer W is subjected to processing using plasma, the control device 100 controls each part of the plasma processing device 1, for example, as follows. First, the control device 100 controls the MFC 67 and the valve 68 to supply a prescribed flow rate of processing gas into the diffusion chamber 40 in a state where the wafer W is placed on the electrostatic chuck 18. The processing gas supplied into the diffusion chamber 40 diffuses in the diffusion chamber 40, and is supplied in a shower-like manner into the chamber 11 via the plurality of flow-through holes 41 and the exhaust hole 37. In addition, the control device 100 controls the APC valve 83 and the exhaust device 84 to control the pressure in the chamber 11 to a prescribed pressure.

[0088] Then, the control device 100 causes the high-frequency power supply 48 to generate high-frequency electric power of a prescribed frequency used in the generation of plasma, and supplies the high-frequency electric power to the shower head 34 via the power supply rod 44. By this, the processing gas in the chamber 11 is plasma-ized. In addition, the control device 100 causes the high-frequency power supply 88 to generate high-frequency electric power of a prescribed frequency used in the introduction (biasing) of ions, and supplies the high-frequency electric power to the placement table 16. By this, charged particles such as ions in the plasma are introduced to the wafer W on the electrostatic chuck 18. By this, a prescribed plasma processing such as etching is performed on the wafer W on the electrostatic chuck 18.

[0089] [Detail of cover member 11d]

[0090] Figure 2 is a view showing an example of the constitution of the cover member of the upper portion of the chamber in the first embodiment. As shown in Figure 2 , the cover member 11d is provided with a plate-shaped member 11a in a manner to form a lid on the upper portion of the wall member 11c. In addition, the cover member 11d is provided with a cylindrical member 11b at the center portion of the plate-shaped member 11a. In Figure 2 the example, eight inlet ports connected to the dielectric body 50 are provided in the plate-shaped member 11a.

[0091] [Arrangement of dielectric body 50]

[0092] Figure 3 is a perspective view showing an example of the arrangement of the dielectric bodies in the upper portion of the chamber in the first embodiment. Figure 3 is a state in which the plate-shaped member 11a and the cylindrical member 11b are removed, and the base member 38, the RF introduction portion 44a provided at the center portion of the base member 38, and the eight dielectric bodies 50 arranged so as to surround the center portion of the base member 38 can be seen. The dielectric bodies 50 are, for example, arranged at equal intervals in rotational symmetry on the circumference of a circle whose center coincides with the center of the base member 38 (upper electrode) of the shower head 34. That is, the dielectric bodies 50 are arranged at equal intervals in rotational symmetry at equal distances from the RF introduction portion 44a.

[0093] Figure 4 is a plan view showing an example of the arrangement of the dielectric bodies in the upper portion of the chamber in the first embodiment. Figure 4 is an example in which, among the eight dielectric bodies 50, the dielectric bodies 51a and 51b are for process gas introduction, the dielectric bodies 52a and 52b are for refrigerant, and the remaining four dielectric bodies 50 are dummy dielectric bodies (virtual dielectric bodies). As shown in Figure 4 , the dielectric bodies 50 are arranged so as to set the introduction ports for the process gas and the refrigerant in axial symmetry from the RF introduction portion 44a, maintaining the axial symmetry between the shower head 34 (upper electrode) and the cover member lid (frame). Further, the shapes of the dielectric bodies 50, including the dummy dielectric bodies 50, are all the same.

[0094] Figure 5 is a perspective cross-sectional view showing an example of the configuration of the upper portion of the chamber in the first embodiment. Figure 5 is an example of the cross section of the upper portion of the chamber in the A"-A-A" line shown in Figure 4 . Further, in Figure 5 , instead of the base member 38, a base member 38a having a diffusion chamber 40a corresponding to the center portion of the wafer W and a diffusion chamber 40b corresponding to the edge portion of the wafer W is used. As shown in Figure 5 , the dielectric bodies 51a, 51b, 52a, and 52b are arranged vertically in the space between the plate-shaped member 11a and the base member 38a. Further, the dielectric bodies 50 are also arranged vertically on the inner side of the power supply rod 44. The dielectric body 51a is arranged so that the through hole inside is in fluid communication with the diffusion chamber 40a. The dielectric body 51b is arranged so that the through hole inside is in fluid communication with the diffusion chamber 40b. The dielectric bodies 52a and 52b are arranged so that the through holes inside are in fluid communication with the flow path 92, and, for example, the refrigerant circulates in the order of the dielectric body 52a, the flow path 92, and the dielectric body 52b. In addition, the RF introduction portion 44a is provided at the center portion of the base member 38a, and is connected to the power supply rod 44.

[0095] [Supply path of high-frequency electric power]

[0096] Figure 6 and Figure 7 This is a diagram illustrating an example of the high-frequency power supply path in the upper electrode. Figure 6 express Figure 4 This is an example of a high-frequency power supply path in the cross-section of the A'-A-A' line, specifically the section where dielectric body 50 is absent. For example... Figure 6 As shown, the high-frequency power supplied from the high-frequency power supply 48 to the power supply rod 44 via the matching unit 46 passes through the surface of the power supply rod 44, the upper surface of the base member 38, the side surface of the base member 38, and the side surface of the top plate 36 due to the surface effect, reaching the lower surface of the top plate 36, which serves as the plasma contact surface. In this case, the power supply rod 44 is located at the center of the base member 38, which serves as the upper electrode of the spray head 34. Therefore, the voltage and current are in the same phase at any point on the edge of the lower surface of the top plate 36, and power is supplied from the edge of the top plate 36 in the same phase towards the center.

[0097] Figure 7 express Figure 4 This is an example of a high-frequency power supply path in the cross-section of the A”-AA” line, i.e., the portion where the dielectric body 50 exists. For example... Figure 7 As shown, the high-frequency power supplied from the high-frequency power source 48 to the power supply rod 44 via the matching unit 46 passes through the surface of the power supply rod 44, the upper surface of the base member 38, the side surface of the base member 38, and the side surface of the top plate 36 due to the surface effect, reaching the lower surface of the top plate 36, which serves as the plasma contact surface. However, a dielectric body 50 is present on the upper surface of the base member 38; therefore, a portion of the high-frequency power flows through the dielectric body 50 to the grounded plate member 11a. Thus, in the portion where the dielectric body 50 is present, the high-frequency power reaching the edge of the lower surface of the top plate 36 is... Figure 6 The dielectric body 50 shown is different from the part that does not exist.

[0098] Figure 8 This is a diagram illustrating an example of the equivalent circuit from the power supply rod to the top plate. (See diagram for example.) Figure 8 As shown, the equivalent circuit of the high-frequency power supply path from the power supply rod 44 to the top plate 36 can be represented by the path from the power supply rod 44 to the top plate 36 and the state in which multiple capacitors are formed in parallel between the covering member 11d. At this time, for example, when the capacitor corresponding to the upper surface of the base member 38 is capacitor C, the capacitance of capacitor C changes depending on the presence or absence of the dielectric body 50. Therefore, when the dielectric body 50 is biased, the bias in the generated plasma becomes larger.

[0099] [Plasma bias caused by the configuration of dielectric 50]

[0100] Figure 9 is a view showing an example of the bias of plasma when the dielectric bodies in the first embodiment are arranged equidistantly in the circumferential direction. As shown in Figure 9 , as the bias of plasma in the first embodiment, the difference in plasma density when five dielectric bodies 50 are arranged equidistantly in the circumferential direction is an example. In Figure 9 , the dielectric bodies 50 are arranged at a central angle θ. At this time, the plasma density in the circumferential direction of the edge of the wafer W is reduced by Δ1 in the presence of the dielectric bodies 50. Further, the edge of the wafer W is a region from the center of 145 to 150 mm on a 300 mm wafer.

[0101] Figure 10 is a view showing an example of the bias of plasma when the dielectric bodies in the comparative example are arranged offset in the circumferential direction. In Figure 10 the comparative example shown in, the difference in plasma density when five dielectric bodies 50 are arranged in two and three in the circumferential direction is an example. In Figure 10 , the dielectric bodies 50 are arranged offset by three in the range of a central angle θ, and offset by two on the opposite side. At this time, the plasma density in the circumferential direction of the edge of the wafer W is reduced by Δ2 in the region where three dielectric bodies 50 are arranged, and reduced by Δ3 in the region where two dielectric bodies 50 are arranged. As shown in Figure 9 and Figure 10 , when the difference Δ1 and Δ2 / Δ3 in plasma density caused by the presence or absence of the dielectric bodies 50 is compared, Δ1 when the dielectric bodies 50 are arranged equidistantly is smaller than Δ2 / Δ3 when the dielectric bodies 50 are arranged offset. This is because when the dielectric bodies 50 are fixedly arranged in a particular region, the impedance of the region becomes high, and the impedance of the region where the dielectric bodies 50 are not arranged becomes large.

[0102] Further, when a material having a relative dielectric constant (in the case of PTFE, εr = 2.1) that can be used for the dielectric bodies 50 is used as the relative dielectric constant of the portion (space) where the dielectric bodies 50 are not present, that is, the dielectric constant (εr = 1.0) close to the atmosphere in the first embodiment, the difference Δ1 in plasma density caused by the presence or absence of the dielectric bodies 50 further decreases, and a plasma having a high uniformity of plasma density can be further generated.

[0103] Figure 11 is a view schematically showing an example of the supply path of high-frequency power in the presence or absence of the dielectric bodies in the first embodiment. In Figure 11 , the supply path of high-frequency power and the plasma density in the presence or absence of the dielectric bodies 50 are schematically shown. Figure 11 The region D is a region where the dielectric bodies 50 are not present, and the region D' is a region where the dielectric bodies 50 are present. As shown in Figure 11As shown, the high-frequency power supplied from the high-frequency power source 48 via the matcher 46 to the power supply rod 44 reaches the lower surface of the top plate 36, which is the plasma contact surface, through the surface of the power supply rod 44, the upper surface of the base member 38, the side surface of the base member 38, and the side surface of the top plate 36 in the region D. In the processing space as the plasma generation space, the plasma P of the processing gas is generated by the supplied high-frequency power, and the high-frequency power reaches the stage 16 as the lower electrode, flows to the ground via the power supply rod 89. Further, in the region D, a part of the high-frequency power flows to the ground via the dielectric body 50 before reaching the lower surface of the top plate 36 opposite to the processing space. In the processing space, the plasma P of the processing gas is generated by the supplied high-frequency power, and the high-frequency power reaches the stage 16 as the lower electrode, flows to the ground via the power supply rod 89. That is, in the region D and the region D', a difference in impedance is generated between the high-frequency power source 48 - the plasma P - the ground. That is, when focusing on the plasma P, the plasma density becomes thick in the region D, and the plasma density becomes thin in the region D'. Figure 11 In the region D', the high-frequency power reaches the lower surface of the top plate 36, which is the plasma contact surface, through the surface of the power supply rod 44, the upper surface of the base member 38, the side surface of the base member 38, and the side surface of the top plate 36. Further, a part of the high-frequency power flows to the ground via the dielectric body 50 before reaching the lower surface of the top plate 36 opposite to the processing space. In the processing space, the plasma P of the processing gas is generated by the supplied high-frequency power, and the high-frequency power reaches the stage 16 as the lower electrode, flows to the ground via the power supply rod 89. That is, in the region D and the region D', a difference in impedance is generated between the high-frequency power source 48 - the plasma P - the ground. That is, when focusing on the plasma P, the plasma density becomes thick in the region D, and the plasma density becomes thin in the region D'.

[0104] In the region D', the high-frequency power reaches the lower surface of the top plate 36, which is the plasma contact surface, through the surface of the power supply rod 44, the upper surface of the base member 38, the side surface of the base member 38, and the side surface of the top plate 36. Further, a part of the high-frequency power flows to the ground via the dielectric body 50 before reaching the lower surface of the top plate 36 opposite to the processing space. In the processing space, the plasma P of the processing gas is generated by the supplied high-frequency power, and the high-frequency power reaches the stage 16 as the lower electrode, flows to the ground via the power supply rod 89. That is, in the region D and the region D', a difference in impedance is generated between the high-frequency power source 48 - the plasma P - the ground. That is, when focusing on the plasma P, the plasma density becomes thick in the region D, and the plasma density becomes thin in the region D'.

[0105] [Effect on etching rate]

[0106] Figure 12 is a graph showing an example of the distribution of the etching rate when the dielectric body in the first embodiment is arranged equidistantly in the circumferential direction. In Figure 12 , an example of the distribution of the etching rate when the dielectric body 50 is arranged equidistantly by five dielectric bodies 50 on the circumference as shown in Figure 9 is shown. As shown in Figure 12 , the distribution of the etching rate in the wafer W is formed as a distribution slightly concave to the inside in the region where the dielectric body 50 exists, but the uniformity becomes substantially high.

[0107] Figure 13 is a graph showing an example of the distribution of the etching rate when the dielectric body in the comparative example is arranged biased in the circumferential direction. In Figure 13 , an example of the distribution of the etching rate when the dielectric body 50 is arranged equidistantly by five dielectric bodies 50 on the circumference as shown in Figure 10 is shown. As shown in Figure 13As shown, the etch rate distribution of the wafer W is located in regions 112 and 113 corresponding to the region where the dielectric 50 is present, forming a distribution that is locally recessed inward from the ground surface. Accordingly, in the first embodiment, by uniformly arranging the dielectric 50, highly uniform plasma can be generated in the circumferential direction of the outer periphery of the electrode, and the uniformity of the etch rate can also be improved.

[0108] [Modifications of the First Embodiment]

[0109] Here, use Figures 14 to 17 A modified example of the arrangement of the dielectric body 50 in the first embodiment will be described. Figure 14 This diagram illustrates an example of a configuration when an odd number of dielectric bodies are arranged in the first embodiment. Figure 14 The illustrated configuration example 120 shows three dielectric bodies 50 evenly arranged on one circumference of the base member 38. Configuration example 121 shows five dielectric bodies 50 evenly arranged on one circumference of the base member 38. Furthermore, configuration example 121 and... Figure 9 The dielectric bodies 50 are arranged with the same configuration, each at a central angle θ. Furthermore, as an example of an odd number of dielectric bodies 50 (three or more), the number is not limited, and seven, nine, or more dielectric bodies 50 can be configured. In addition, when an odd number of dielectric bodies 50 are configured, they are arranged rotationally symmetrically.

[0110] Figure 15 This diagram illustrates an example of a configuration when the dielectric bodies in the first embodiment are arranged in an even number. Figure 15 The configuration example 122 shows six dielectric bodies 50 evenly arranged on one circumference of the base member 38. Configuration example 123 shows eight dielectric bodies 50 evenly arranged on one circumference of the base member 38. Furthermore, when there are four or more dielectric bodies 50 in an even-numbered configuration, the number is not limited, and ten, twelve, or more dielectric bodies 50 can be configured. Moreover, when an even number of dielectric bodies 50 are configured, they are arranged rotationally symmetrically; similarly, they are arranged rotationally symmetrically when an odd number are configured.

[0111] Figure 16 This is a diagram illustrating an example of the arrangement of the annular dielectric body in the first embodiment. Figure 16 The configuration example 124 shown is an example where, instead of the dielectric body 50, a plurality of through holes 56 are provided in an annular dielectric body 55, and the through holes 56 are evenly arranged on one circumference. The through holes 56 are arranged in a rotationally symmetrical manner when there is an odd number, and in an axially symmetrical manner when there is an even number. The dielectric body 55 is configured such that the center of the dielectric body 55 coincides with the center of the base member 38 (the center of the upper electrode). Furthermore, the dielectric body 55 can be a plate with a relatively wide radial direction.

[0112] Figure 17 is a drawing showing an example of the arrangement of the dielectric bodies in the first embodiment when the dielectric bodies are arranged on a plurality of circumferences. Figure 17 The arrangement example 125 shown is an example in which six dielectric bodies 50 are each arranged equally on two circumferences 126, 127 on the base member 38. In this case, the dielectric bodies 50 are each arranged rotationally symmetrically or axially symmetrically on the circumferences 126, 127. Further, the number of the dielectric bodies 50 on each of the circumferences 126, 127 is three or more when arranged in an odd number, and four or more when arranged in an even number, and the number is not limited. In addition, in the case of the arrangement example 125, the dielectric bodies 50 are arranged on the circumferences 126, 127 on the base member 38, but the dielectric bodies 50 can be arranged on the circumferences 126, 127 on the base member 38 and the circumferences 126, 127 on the wall member 11c. Figure 14 Figure 15 and Figure 17 In the first embodiment, the dielectric bodies 50 are arranged on the circumferences 126, 127 on the base member 38, but the dielectric bodies 50 can be arranged on the circumferences 126, 127 on the base member 38 and the circumferences 126, 127 on the wall member 11c. In this case, the more the number of the dielectric bodies 50, the more uniform plasma can be generated in the circumferential direction of the electrode outer peripheral portion.

[0113] (Second Embodiment)

[0114] In the first embodiment, the dielectric bodies 50 are arranged on the circumferences 126, 127 on the base member 38, but the dielectric bodies 50 can be arranged on the circumferences 126, 127 on the base member 38 and the circumferences 126, 127 on the wall member 11c. In this case, the more the number of the dielectric bodies 50, the more uniform plasma can be generated in the circumferential direction of the electrode outer peripheral portion.

[0115] [Configuration of Plasma Processing Apparatus 2]

[0116] Figure 18 is a drawing showing an example of the plasma processing apparatus in the second embodiment of the present application. Figures 19 to 22 The plasma processing apparatus 2 shown is different from the plasma processing apparatus 1 of the first embodiment in that the apparatus main body 10 is replaced with an apparatus main body 10a. In addition, the apparatus main body 10a is different from the apparatus main body 10 in that the covering member 11d, the dielectric bodies 51, 52 are replaced with a covering member 11g, dielectric bodies 58, 59. Further, in the following description, in the case where the dielectric bodies 58, 59 are not distinguished, and in the case where the pseudo dielectric bodies are expressed as the dielectric body 57.

[0117] The covering member 11g has a plate-shaped member 11e, a cylindrical member 11b, and a wall member 11f. The plate-shaped member 11e corresponds to the plate-shaped member 11a of the first embodiment, and does not have the guide inlet of the pipe 64, 93. The wall member 11f corresponds to the wall member 11c of the first embodiment, and has the guide inlet of the pipe 64, 93. That is, the covering member 11g is a covering member that guides the pipe of the processing gas, the refrigerant from the side.

[0118] ​The dielectric body 58 has a through-hole, and the faces at both ends are curved by 90 degrees differently. One end of the dielectric body 58 is connected to the guide inlet 62 of the base member 38. The other end of the dielectric body 58 is connected to one end of the pipe 64 via the guide inlet provided in the wall member 1 If.

[0119] The dielectric body 59 has a through-hole like the dielectric body 58, and the faces at both ends are curved by 90 degrees differently. One end of the dielectric body 59 is connected to the flow path 92 of the base member 38. The other end of the dielectric body 59 is connected to the pipe 93 via the guide inlet provided in the wall member 1 If. Further, the heights of the dielectric bodies 58, 59 and the pipes 64, 93 are the same height respectively, and the heights of the guide inlets provided in the wall member 1 If are also the same height.

[0120] [Configuration and shape of dielectric body 57]

[0121] Next, the configuration and shape of the dielectric body 57 will be described. Figures 19 to 22 The configuration and shape of the dielectric body 57 will be described. Figure 19 Fig. 13 is a plan view showing an example of the configuration of the dielectric body in the upper portion of the chamber in the second embodiment. Figure 20 The configuration example 130 shown is an example in which one end of the six dielectric bodies 57 is arranged equally on one circumference on the base member 38, and the other end of the dielectric body 57 is connected to the guide inlet of the wall member 1 If. In the configuration example 130, the dielectric body 57 is connected perpendicularly to the wall member 1 If as viewed from the upper surface.

[0122] Figure 21 The configuration example 131 shown is a modification example of the configuration of the dielectric body 57. The configuration example 131 is an example in which one end of the six dielectric bodies 57 is arranged equally on one circumference on the base member 38, and the other end of the dielectric body 57 is connected to the guide inlet of the wall member 1 If. In the configuration example 131, the dielectric body 57 is connected obliquely to the wall member 1 If as viewed from the upper surface. The angle at which the dielectric body 57 is connected to the wall member 1 If can be any angle. However, it is preferable that the angle at which all of the dielectric bodies 57 are connected to the wall member 1 If be the same or approximately the same so as to be rotationally symmetrical.

[0123] Figure 22 The configuration example 132 shown shows an example of the shape of the dielectric body 57. In the configuration example 132, the shape of the dielectric body 57 is formed in a substantially L-letter shape. The angle of the curved portion of the substantially L-letter shape in the shape of the dielectric body 57 can be any angle. However, it is preferable that the angle of the curved portion of the substantially L-letter shape in the shape of the dielectric body 57 be the same or approximately the same so as to be rotationally symmetrical.

[0124] Figure 23The configuration example 133 is a variation of the shape of the dielectric body 57. In the configuration example 133, the shape of the dielectric body 57 is formed in a circular arc shape. The radius of curvature of the circular arc in the shape of the dielectric body 57 can be any value. It is preferable that the radius of curvature of the circular arc in the shape of the dielectric body 57 be the same or approximately the same to be rotationally symmetrical.

[0125] As described above, in the second embodiment, as in the first embodiment, the dielectric body 57 is disposed uniformly, and it is possible to generate plasma with high uniformity in the circumferential direction of the electrode outer peripheral portion, and it is possible to improve the uniformity of the etching rate.

[0126] (Third Embodiment)

[0127] In the first embodiment, the high-frequency power source 48 for generating plasma is connected to the shower head 34 as the upper electrode, but can be connected to the stage 16 as the lower electrode. Based on this embodiment, the third embodiment will be described. In addition, the same reference numerals are given to the same configurations as those of the first embodiment, and the description of the repeated configurations and operations will be omitted.

[0128] [Configuration of Plasma Processing Apparatus 3]

[0129] Figure 23 is a view showing an example of a plasma processing apparatus in the third embodiment of the present application. Figure 24 The plasma processing apparatus 3 shown is provided with an apparatus main body 10b instead of the apparatus main body 10, compared with the plasma processing apparatus 1 of the first embodiment. In addition, the apparatus main body 10b is provided with a cover member 11j, an LPF (Low-Pass Filter), 150, a direct-current power source 151, a high-frequency power source 48a, and a matcher 87a instead of the cover member 11d, the matcher 46, the high-frequency power source 48, and the matcher 87, compared with the apparatus main body 10.

[0130] The cover member 11j is provided with the plate-like member 11h, the wall member 11c, and an insulating member 11i. The plate-like member 11h corresponds to the plate-like member 11a of the first embodiment, except that the plate-like member 11h is connected to the power supply rod 44 via the insulating member 11i.

[0131] The DC power supply 151 applies a DC voltage to the susceptor member 38 via the LPF 150 and the power supply rod 44. That is, the DC power supply 151 applies a DC voltage to the shower head 34 as the upper electrode. In addition, the LPF 150 is high-frequency grounded. The high-frequency power supply 48a supplies high-frequency electric power for plasma generation to the stage 16 as the lower electrode via the matcher 87a and the power supply rod 89. Further, the matcher 87a is also connected to the high-frequency power supply 88. The high-frequency power supply 88, like the first embodiment, supplies high-frequency electric power for biasing to the stage 16 via the matcher 87a and the power supply rod 89. That is, in the device main body 10b of the third embodiment, the stage 16 as the lower electrode becomes an RF application electrode for plasma generation, and the shower head 34 as the upper electrode becomes a counter ground (GND) electrode.

[0132] [Supply path of high-frequency electric power and plasma density]

[0133] Figure 24 is a diagram schematically showing an example of the supply path of high-frequency electric power in the third embodiment with and without the dielectric body. In Figure 24 , the supply path of high-frequency electric power and the plasma density with and without the dielectric body 50 are schematically shown. Figure 24 The region E is a region in which the dielectric body 50 is not present, and the region E' is a region in which the dielectric body 50 is present. As ​ indicated, the high-frequency electric power supplied from the high-frequency power supply 48a via the matcher 87a to the power supply rod 89 reaches the surface of the stage 16 as the plasma contact surface through the inside of the stage 16, the side surface of the stage 16, in the region E. In the processing space, the supplied high-frequency electric power generates plasma P of the processing gas, and the high-frequency electric power reaches the lower surface of the ceiling 36. The high-frequency electric power flows to the ground via the LPF 150 through the lower surface of the ceiling 36, the side surface of the ceiling 36, the side surface of the susceptor member 38, the upper surface of the susceptor member 38, and the surface of the power supply rod 44.

[0134] On the other hand, in the region E', the high-frequency electric power reaches the surface of the stage 16 as the plasma contact surface through the inside of the stage 16, the side surface of the stage 16. In the processing space, the plasma P of the processing gas is generated by the supplied high-frequency electric power, and the high-frequency electric power reaches the lower surface of the ceiling 36. The high-frequency electric power flows to the ground via the LPF 150 through the lower surface of the ceiling 36, the side surface of the ceiling 36, the side surface of the base member 38, the upper surface of the base member 38, the surface of the power supply rod 44. In addition, before the high-frequency electric power reaches the power supply rod 44 in the upper surface of the base member 38, a part thereof flows to the ground through the dielectric body 50. That is, in the regions E and E', the impedance between the high-frequency power source 48a-plasma P-ground is different. That is, when focusing on the plasma P, in the region E, the plasma density becomes thick, and in the region E', the plasma density becomes thin.

[0135] According to the above description, in the third embodiment, as in the first embodiment, by equally arranging the dielectric body 50, it is possible to generate the plasma with high uniformity in the circumferential direction of the electrode outer peripheral portion, and it is possible to improve the uniformity of the etching rate.

[0136] In the above, according to the above-described embodiments, the plasma processing apparatus 1 includes the chamber 11, the first electrode (shower head 34), the high-frequency power source 48, the power supply rod 44, the plate-shaped member 11a, and the dielectric body. The first electrode is an electrode that opposes the inside of the chamber 11. The high-frequency power source 48 supplies high-frequency electric power to the first electrode. The power supply rod 44 supplies high-frequency electric power to the center of the surface of the first electrode on the side opposite to the surface that opposes the inside of the chamber 11. The plate-shaped member 11a is a plate-shaped member that is provided in parallel to the surface of the first electrode on the side opposite to the surface that opposes the inside of the chamber 11, and is grounded and is conductive. The dielectric body connects between the first electrode and the plate-shaped member 11a, and is a shape that is rotationally symmetrical with respect to the center of the first electrode. As a result, it is possible to generate the plasma with high uniformity in the circumferential direction of the electrode outer peripheral portion.

[0137] In addition, in each of the above-described embodiments, the dielectric body has a through hole that connects a space (diffusion chamber 40, flow path 92) provided inside the first electrode and a pipe 64, 93 that connects with the outside of the plate-shaped member 11a. As a result, it is possible to supply the processing gas to the shower head 34, and it is possible to perform temperature adjustment of the base member 38 and the shower head 34 by the refrigerant.

[0138] In addition, in each of the above-described embodiments, the dielectric body can be the same shape and material, and has a plurality of portions (dielectric body 50) each having a through hole, and the plurality of portions are each arranged rotationally symmetrically with respect to the center of the first electrode. As a result, it is possible to generate the plasma with high uniformity in the circumferential direction of the electrode outer peripheral portion.

[0139] Further, according to the modification of the first embodiment, the dielectric body is a ring-shaped member (dielectric body 55) whose center is arranged to coincide with the center of the first electrode. As a result, plasma having high uniformity can be generated in the circumferential direction of the outer peripheral portion of the electrode.

[0140] Further, according to the modification of the first embodiment, the ring-shaped member has a plurality of through-holes 56 each of which is arranged rotationally symmetrically with respect to the center of the first electrode. As a result, plasma having high uniformity can be generated in the circumferential direction of the outer peripheral portion of the electrode.

[0141] Further, according to each of the above-described embodiments, the through-holes allow the process gas supplied into the chamber 11 to flow therethrough. As a result, the process gas can be supplied to the shower head 34.

[0142] Further, according to each of the above-described embodiments, a plurality of through-holes are provided in the dielectric body, including a dummy through-hole (virtual through-hole) that does not allow the process gas to flow therethrough. As a result, plasma having high uniformity can be generated in the circumferential direction of the outer peripheral portion of the electrode.

[0143] Further, according to each of the above-described embodiments, a plurality of through-holes are provided in the dielectric body, and a through-hole different from the through-hole that allows the process gas to flow therethrough allows a refrigerant supplied to a space provided inside the first electrode to flow therethrough. As a result, the pedestal member 38 and the shower head 34 can be temperature-adjusted by the refrigerant.

[0144] Further, according to each of the above-described embodiments, the plurality of through-holes include a dummy through-hole that does not allow the process gas and the refrigerant supplied to the space provided inside the first electrode to flow therethrough. As a result, plasma having high uniformity can be generated in the circumferential direction of the outer peripheral portion of the electrode.

[0145] Further, according to each of the above-described embodiments, the through-holes allow the refrigerant supplied to the space provided inside the first electrode to flow therethrough. As a result, the pedestal member 38 and the shower head 34 can be temperature-adjusted by the refrigerant.

[0146] Further, according to each of the above-described embodiments, a plurality of through-holes are provided in the dielectric body, including a dummy through-hole that does not allow the refrigerant supplied to the space provided inside the first electrode to flow therethrough. As a result, plasma having high uniformity can be generated in the circumferential direction of the outer peripheral portion of the electrode.

[0147] Further, according to the third embodiment, the plasma processing apparatus 3 includes the chamber 11, the first electrode (shower head 34), the second electrode (mounting table 16), the high frequency power source 48a, the power supply rod 44, the plate-shaped member 11h, and the dielectric body. The first electrode opposes the inside of the chamber 11. The second electrode is disposed to oppose the first electrode inside the chamber 11. The high frequency power source 48a supplies high frequency power to the second electrode. The power supply rod 44 supplies a direct current voltage to the center of the surface of the first electrode on the side opposite the surface opposing the inside of the chamber 11. The plate-shaped member 11h is a conductive plate-shaped member that is disposed in parallel to the surface of the first electrode on the side opposite the surface opposing the inside of the chamber 11 and is grounded. The dielectric body is connected between the first electrode and the plate-shaped member 11h and has a shape that is rotationally symmetrical with respect to the center of the first electrode. As a result, plasma having high uniformity can be generated in the circumferential direction of the outer periphery of the electrode.

[0148] Further, according to the third embodiment, the first electrode is grounded with respect to the frequency of the high frequency power supplied to the second electrode. As a result, plasma having high uniformity can be generated in the circumferential direction of the outer periphery of the electrode.

[0149] Further, according to the third embodiment, the plasma processing apparatus 3 further has a direct current power source 151 that applies a direct current voltage to the first electrode via the power supply rod. As a result, plasma having high uniformity can be generated in the circumferential direction of the outer periphery of the electrode.

[0150] The embodiments disclosed in the specification are illustrative in all respects, and should not be considered restrictive. The above-described embodiments can be omitted, substituted, changed in various ways without departing from the scope and spirit of the appended claims.

[0151] Further, in each of the above-described embodiments, one or two diffusion chambers for the processing gas are provided, but this is not limiting. For example, three or four diffusion chambers can be provided, each provided with a dielectric body 50 that supplies the processing gas.

[0152] Further, in each of the above-described embodiments, one flow path for the cold water refrigerant is provided, but this is not limiting. For example, two or more flow paths for the refrigerant can be provided, each provided with a dielectric body 50 that supplies the processing gas.

[0153] Further, in each of the above-described embodiments, the effects in the supply path for the high frequency power for plasma generation are described, but this is not limiting. For example, by configuring the dielectric body rotationally symmetrically in the supply path for the high frequency power for biasing, it can be expected that a high-uniformity ion can be introduced onto the wafer.

[0154] Further, in each of the above-described embodiments, the through-hole of the dielectric body 50 is a through-hole for allowing a processing gas or a cold water refrigerant to flow therethrough or a dummy through-hole, but is not limited thereto. For example, the through-hole of the dielectric body 50 can be used as a passage for an optical fiber for measuring the temperature of the base member 38 and the top plate 36, an optical path of a laser. Further, in a case where a heater is embedded in the base member 38 for temperature adjustment of the base member 38 and the top plate 36, the through-hole can be used as a passage for a wiring connected to the heater.

[0155] Further, in each of the above-described embodiments, the space covered by the cover member is under atmospheric pressure, but is not limited thereto. For example, the space covered by the cover member can be depressurized by a vacuum pump to be in a vacuum state. Thus, in a case where a cold water refrigerant having a lower dew point temperature is used, dew condensation in the space covered by the cover member can be suppressed.

Claims

1. A plasma processing apparatus characterized by comprising: comprising: a chamber; a first electrode facing the inside of the chamber; a high-frequency power source supplying high-frequency power to the first electrode; a supply rod supplying the high-frequency power to the center of the surface of the first electrode on the side opposite to the surface facing the inside of the chamber; a plate-shaped member made of a conductive material and grounded, which is arranged in parallel with the surface of the first electrode on the side opposite to the surface facing the inside of the chamber; and a dielectric body connecting between the first electrode and the plate-shaped member, which is formed in a shape symmetrical with respect to the center of the first electrode, the dielectric body having a through-hole connecting a space provided inside the first electrode and a pipe connected to the outside of the plate-shaped member.

2. The plasma processing apparatus according to claim 1, wherein: the dielectric body has a plurality of portions formed of the same shape and material, the plurality of portions each having the through-hole, the plurality of portions are arranged in rotational symmetry with respect to the center of the first electrode.

3. The plasma processing apparatus according to claim 1, wherein: the dielectric body is a ring-shaped member, the center of the ring-shaped member being arranged to coincide with the center of the first electrode.

4. The plasma processing apparatus according to claim 3, wherein: the ring-shaped member has a plurality of the through-holes, the plurality of through-holes being arranged in rotational symmetry with respect to the center of the first electrode.

5. The plasma processing apparatus according to any one of claims 1 to 4, wherein: the through-hole allows a processing gas supplied into the chamber to flow therethrough.

6. The plasma processing apparatus according to claim 5, wherein: the through-holes are provided in the dielectric body in plurality, including a dummy through-hole that does not allow the processing gas to flow therethrough.

7. The plasma processing apparatus according to claim 5, wherein: the through-holes are provided in the dielectric body in plurality, the through-holes other than the through-holes that allow the processing gas to flow therethrough allowing a refrigerant supplied into a space provided inside the first electrode to flow therethrough.

8. The plasma processing apparatus according to claim 6, wherein: the plurality of through-holes include a dummy through-hole that does not allow the processing gas and the refrigerant supplied into the space provided inside the first electrode to flow therethrough.

9. The plasma processing apparatus according to any one of claims 1 to 4, wherein: the through-hole allows a refrigerant supplied into a space provided inside the first electrode.

10. The plasma processing apparatus according to claim 9, wherein: the through-holes are provided in the dielectric body in plurality, including a dummy through-hole that does not allow the refrigerant supplied into the space provided inside the first electrode to flow therethrough. comprising:

11. A plasma processing apparatus, characterized by comprising: a chamber; a first electrode facing the inside of the chamber; a second electrode provided in the chamber to face the first electrode a high-frequency power source supplying high-frequency power to the second electrode; a supply rod supplying a direct-current voltage to the center of the surface of the first electrode on the side opposite to the surface facing the inside of the chamber; ​ a plate-shaped member of electric conductivity grounded, which is arranged in parallel with a surface of the first electrode opposite to a surface inside the chamber; and a dielectric body connecting between the first electrode and the plate-shaped member, which is formed in a shape of rotational symmetry with respect to a center of the first electrode, the dielectric body having a through-hole connecting a space provided inside the first electrode and a pipe connected to an outside of the plate-shaped member.

12. The plasma processing apparatus according to claim 11, wherein: the first electrode is grounded with respect to a frequency of the high-frequency power supplied to the second electrode.

13. The plasma processing apparatus according to claim 11 or 12, wherein: a direct-current power source that applies the direct-current voltage to the first electrode via the power supply rod is further provided.

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