Dynamic sheath control using edge ring lifting

Abstract

The base assembly includes a base for supporting a substrate. A central shaft positions the base at a certain height during operation. A ring is positioned along the periphery of the base. A ring adjuster subassembly includes an adjuster flange disposed around a middle section of the central shaft. The subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed below the base. The subassembly includes ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the ring adjuster pins is positioned on the adjuster plate at a position adjacent to and outside of the base diameter. The ring adjuster pins contact the lower edge surface of the ring. The adjuster flange is coupled to at least three adjuster actuators for limiting the elevation and tilt of the ring relative to the top surface of the base.

Description

Technical Field

[0001] Embodiments herein relate to semiconductor substrate processing equipment tools, and more particularly to dynamic sheath control configured for edge ring lifting. Background Art

[0002] Improved film uniformity is important in plasma enhanced chemical vapor deposition (PECVD) and plasma atomic layer deposition (ALD) technologies. Chamber systems implementing PECVD and ALD processes can introduce non-uniformities from many sources. In particular, multi-station modules performing PECVD and ALD are characterized by large open reactors, which can contribute to azimuthal non-uniformities and edge drop effects. Non-uniformities also exist in single-station modules. For example, during plasma processing, standard pedestal configurations do not provide the desired flow profiles and / or material conditions near the wafer edge. The results of current configurations using PECVD hardware near the wafer can result in lower or higher edge deposition profiles, depending on the recipe conditions. As the die is advanced closer to the wafer edge, the numerical contribution of this azimuthal non-uniformity to the overall non-uniformity increases. Despite best efforts to minimize damage and / or non-uniform deposition profiles, conventional PECVD and plasma ALD schemes still need improvement.

[0003] In particular, standard pedestal configurations do not provide the desired flow profiles and / or material conditions near the wafer edge during plasma processing. Current configurations using PECVD hardware near the wafer can result in a poor edge deposition profile. Furthermore, uniformity degrades over time, primarily at the wafer edge, which is most sensitive to flow profiles and local conditions, creating a need to maintain stable edge conditions at all times.

[0004] Furthermore, a single carrier / focus ring will not be suitable for a wide variety of deposited films. Even if optimized edge profiles could be generated for different carrier / focus ring and wafer combinations, replacing the carrier / focus ring is not feasible in an automated manner due to other platform-side limitations (slot valves, load locks, etc.). Manually replacing the carrier based on film type is also not feasible because it would not maintain production uptime (chamber cooling, opening, replacement, closing, requalification).

[0005] The background description provided herein is for the purpose of generally presenting the context of the present disclosure. No admission is made, either explicitly or implicitly, that the work of the presently designated inventors to the extent described in this background section and in any aspects of the description that were not identified as prior art at the time the application was filed, is prior art to the present disclosure.

[0006] It is against this background that embodiments of the present disclosure emerge. Summary of the Invention

[0007] Embodiments herein are directed to solving one or more problems found in the related art, and more particularly to performing semiconductor processes that include tuning the deposition profile near the wafer edge by raising and / or lowering an edge ring of a PECVD deposition pedestal to adjust the relative capacitance encountered by the RF field between wafers or through the edge ring. Several inventive embodiments of the present disclosure are described below.

[0008] A deposition chamber (e.g., PECVD, ALD, etc.) includes one or more stations having a radio frequency (RF) source, a wafer, and a grounded surface relative to the source. An edge (e.g., load / focus) ring is used to shape the deposition profile near the edge of a wafer disposed on a susceptor within the station. In an embodiment of the present disclosure, dynamic sheath control (DSC) provides lift of the edge (e.g., load / focus) ring on the deposition susceptor to adjust the relative capacitance encountered by the RF field in its flow path through the wafer and through the edge ring.

[0009] Embodiments of the present disclosure include a susceptor assembly for a processing chamber for depositing films on wafers. The susceptor assembly includes a susceptor for supporting a substrate. The susceptor has a central axis that positions the susceptor at a certain height during operation. The susceptor assembly includes a ring configured to be positioned along the periphery of the susceptor. The susceptor assembly includes a ring adjuster subassembly. The ring adjuster subassembly includes an adjuster flange disposed around a middle section of the central axis. The ring adjuster subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed below the susceptor. The ring adjuster subassembly includes a plurality of ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the plurality of ring adjuster pins is located at a corresponding position on the adjuster plate adjacent to and outside of a diameter of the susceptor. The plurality of ring adjuster pins are configured to contact an edge lower surface of the ring, and the adjuster flange is coupled to at least three adjuster actuators to define the elevation and tilt of the ring relative to a top surface of the base.

[0010] Other embodiments of the present disclosure include another susceptor assembly for a processing chamber for depositing films on wafers. The susceptor assembly includes a susceptor for supporting a substrate. The susceptor has a central axis that positions the susceptor at a certain height during operation. The susceptor assembly includes a ring configured to be positioned along the periphery of the susceptor. The susceptor assembly includes a ring adjuster subassembly. The ring adjuster subassembly includes a lower flange disposed around a lower section of the central axis and configured to maintain a vacuum within the central axis. The ring adjuster subassembly includes a lower bellows connected to the lower flange. The ring adjuster subassembly includes an adjuster flange connected to the lower bellows and disposed around a middle section of the central axis. The ring adjuster subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed below the susceptor. The ring adjuster subassembly includes an upper bellows connected to the adjuster flange. The ring adjuster subassembly includes an upper flange connected to the upper bellows. The ring adjuster subassembly includes a plurality of ring adjuster pins connected to the adjuster plate and extending vertically therefrom. Each of the plurality of ring adjuster pins is located at a corresponding position on the adjuster plate adjacent to and external to the diameter of the base. The plurality of ring adjuster pins are configured to contact the lower edge surface of the ring. The adjuster flange is coupled to at least three adjuster actuators to define the elevation and tilt of the ring relative to the top surface of the base.

[0011] Yet other embodiments of the present disclosure include another susceptor assembly for a processing chamber for depositing films on wafers. The susceptor assembly includes a susceptor for supporting a substrate. The susceptor has a central axis that positions the susceptor at a certain height during operation. The susceptor assembly includes a ring configured to be positioned along the periphery of the susceptor and extending beyond the outer diameter of the susceptor at a plurality of arms. The susceptor assembly includes a ring adjuster subassembly. The ring adjuster subassembly includes an adjuster flange disposed around a mid-section of the central axis. The ring adjuster subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed below the susceptor. The sleeve is configured to independently move vertically relative to the central axis at a plurality of contact points aligned with the plurality of arms. The ring adjuster subassembly includes a plurality of ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the plurality of ring adjuster pins is located on a corresponding arm of the adjuster plate at a corresponding location adjacent to and outside of a diameter of the base. The plurality of ring adjuster pins are configured to contact an edge lower surface of the ring, and the adjuster flange is coupled to at least three adjuster actuators aligned with the plurality of contact points to define the elevation and tilt of the ring relative to the top surface of the base.

[0012] Other embodiments of the present disclosure include a process chamber for depositing a film on a wafer. The process chamber includes a susceptor configured to accommodate the wafer. The susceptor includes a central top surface extending from a central axis of the susceptor to a central top surface diameter. The susceptor includes an annular surface extending from the central top surface to an outer diameter of the annular surface. The annular surface is located at a step downward from the central top surface. The susceptor includes a central shaft extending from the central axis of the susceptor to an axis diameter corresponding to an outer shaft surface. The central shaft is configured for vertical movement, which is transmitted to the susceptor. The process chamber includes an edge ring positioned adjacent to the annular surface and extending from an inner diameter to exceed the outer diameter of the annular surface at multiple radial extensions of the edge ring. The process chamber includes an outer sheath adjacent to the outer shaft surface. The outer sheath is configured for independent vertical movement relative to the central shaft at multiple contact points of the outer sheath. The multiple contact points correspond to the multiple radial extensions of the edge ring. The process chamber includes a horn connected to the outer sheath. The process chamber includes a DSC (Dynamic Sheath Control) lift pin plate connected to the horn. The DSC lift pin plate has a plurality of arms corresponding to the plurality of contact points of the outer sheath. The processing chamber includes a plurality of DSC lift pins connected to the DSC lift pin plate at the ends of the plurality of arms. The plurality of DSC lift pins are configured to contact the plurality of radial extensions of the edge ring. The independent vertical motion of the outer sheath is transmitted to the one or more DSC lift pins via the horn and one or more arms of the DSC lift pin plate.

[0013] These and other advantages will be appreciated by those skilled in the art from a reading of the entire specification and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The embodiments are best understood by referring to the following description taken in conjunction with the accompanying drawings.

[0015] Figure 1 A substrate processing system is described for processing wafers, for example, to form films thereon.

[0016] Figure 2 A top view of a multi-station processing tool is illustrated according to one embodiment, wherein four processing stations are arranged.

[0017] Figure 3 A schematic diagram of an embodiment of a multi-station processing tool having inbound load locks and outbound load locks is shown according to one embodiment.

[0018] Figure 4A According to one embodiment of the present disclosure, a susceptor for holding a wafer for use in a deposition process such as a PECVD or atomic layer deposition (ALD) process is shown, wherein the configuration of the susceptor includes a dynamic sheath control (DSC) system configured to tune the relative capacitance encountered near the edge of the wafer and between flow paths through the wafer or through an edge ring.

[0019] Figure 4B According to one embodiment of the present disclosure, Figure 4A A perspective cutaway view of a portion of a base showing the fit between the edge ring and the base.

[0020] Figure 4C A diagram illustrating the relative capacitance encountered near the edge of a wafer disposed on a susceptor and between flow paths through a wafer disposed thereon or through an edge ring is shown according to one embodiment of the present disclosure.

[0021] Figure 4C-1 The total capacitance of the flow path through the edge ring to the pedestal is shown according to an embodiment of the present disclosure.

[0022] Figure 4C-2 The total capacitance of the flow path through the wafer to the susceptor is displayed according to an embodiment of the present disclosure.

[0023] Figure 5A According to one embodiment of the present disclosure, a top view of a base configuration including an edge ring and a supporting dynamic sheath control, wherein the edge ring is a load-bearing ring, and the supporting dynamic sheath control independent vertical movement of a contact portion including the load-bearing ring, wherein the independent vertical movement is achieved by one or more adjuster actuators connected to one or more contact points of the contact portion.

[0024] Figure 5B An embodiment according to the present disclosure shows a top view of a base configuration including an edge ring, which is a focus ring, and a supporting dynamic sheath control for independent vertical movement of a contact portion including a carrier ring, the independent vertical movement being achieved by one or more adjuster actuators connected to one or more contact points of the contact portion.

[0025] Figure 5C According to one embodiment of the present disclosure, Figure 5A or a cross-sectional view of a pedestal configuration taken along line XX of FIG5B, the pedestal configuration incorporating dynamic sheath control to lift a radial portion of the carry ring to adjust the relative capacitance of the RF flow path through the wafer or the carry ring.

[0026] Figure 5D-1 Dimensions of a load / focus ring configured to tune the relative capacitance of an RF flow path through a wafer or a load / focus ring are shown according to an embodiment of the present disclosure, wherein the load / focus ring is disposed on an annular surface.

[0027] Figure 5D-2 An embodiment according to the present disclosure shows a method for tuning the relative capacitance of an RF flow path through a wafer or a load / focus ring. Figure 5D-1 The dimensions of the carrier / focusing ring, wherein the carrier / focusing ring is raised from the annular surface.

[0028] Figure 5D-3 Dimensions of a thin load / focus ring configured to tune the relative capacitance of an RF flow path through a wafer or a load / focus ring are shown according to an embodiment of the present disclosure, wherein the load / focus ring is disposed on an annular surface.

[0029] Figure 5D-4 An embodiment according to the present disclosure shows a method for tuning the relative capacitance of an RF flow path through a wafer or a load / focus ring. Figure 5D-3 Dimensions of a thin load / focus ring where the load / focus ring is raised from the annular surface.

[0030] Figure 6A A cross-sectional view of a pedestal assembly incorporating dynamic sheath control to lift a radial portion of a carrier ring to adjust the relative capacitance of an RF flow path through a wafer or carrier ring is shown according to one embodiment of the present disclosure.

[0031] Figure 6B An isometric view of a pedestal configuration incorporating dynamic sheath control to lift radial portions of a carry ring to adjust the relative capacitance of an RF flow path through a wafer or carry ring is shown according to an embodiment of the present disclosure.

[0032] Figure 6C A top view of a multi-station processing tool is shown according to one embodiment of the present disclosure illustrating the positioning of the tongues or radial extensions of the carrier ring so that the tongues do not interfere with the walls of the chamber as the carrier ring moves between stations.

[0033] Figure 7A A cross-sectional view of a pedestal configuration incorporating dynamic sheath control to lift a radial portion of a focus ring to adjust the relative capacitance of an RF flow path through the wafer or focus ring is shown in accordance with one embodiment of the present disclosure.

[0034] Figure 7B An isometric view of a pedestal configuration incorporating dynamic sheath control to lift a radial portion of a focus ring to adjust the relative capacitance of an RF flow path through the wafer or focus ring is shown according to one embodiment of the present disclosure.

[0035] Figure 8A According to one embodiment of the present disclosure, a cross-sectional view of the interface between the central axis of a base and a sheath or sleeve is shown, which is configured for dynamic sheath control to lift a radial portion of an edge (e.g., carrier or focus) ring to adjust the relative capacitance of the RF flow path through the wafer or edge ring.

[0036] Figure 8B One embodiment according to the present disclosure shows relative movement of a central shaft of a base and a sheath or sleeve configured for dynamic sheath control to lift a radial portion of an edge (e.g., carrier or focus) ring to adjust the relative capacitance of an RF flow path through a wafer or edge ring.

[0037] Figure 9 A control module for controlling the above-described system is shown. DETAILED DESCRIPTION

[0038] Although the following detailed description contains many specific details for the purpose of illustration, it will be appreciated by those skilled in the art that many variations and modifications of the following details are within the scope of the present invention. Therefore, the aspects of the invention described below are set forth without causing any loss of generality to the claims that follow and without imposing limitations.

[0039] In general, various embodiments of the present disclosure describe systems that provide improved film uniformity in single-station and multi-station systems during wafer processing (e.g., PECVD and ALD processes). In particular, various embodiments of the present disclosure describe a pedestal assembly that adjusts the relative capacitance of flow paths encountered by an RF field at the edge of a wafer during a deposition process. For example, at the wafer edge, a flow path passes through the wafer and a second flow path passes through an edge ring. In particular, the edge ring is lifted at one or more points to provide lift and / or tilt of the edge ring relative to the pedestal, thereby changing the deposition profile at the wafer edge. Recipe-controlled edge profile tuning by tuning the relative capacitance at one or more points along the outer edge of the wafer can be performed based on a specific recipe or film properties.

[0040] Advantages of various disclosed embodiments of a pedestal assembly configured for dynamic sheath control to lift a radial portion of an edge (e.g., a carrier or focus) ring include tuning or adjusting the relative capacitance of the RF flow path through the wafer or edge ring to achieve a favorable deposition profile near the wafer edge, thereby extending the available area of ​​the wafer suitable for die production and increasing the number of dies per wafer. In other words, embodiments of the present disclosure provide recipe-controlled tuning of the wafer's edge profile, which current deposition hardware technology is not configured for. Other advantages of various disclosed embodiments of a pedestal assembly configured for dynamic sheath control to lift a radial portion of an edge (e.g., a carrier or focus) ring include a retrofittable solution that does not require chamber modifications, which would otherwise be expensive, untimely, and even impractical at some customer locations. In some embodiments, pressure-actuated tuning utilizes unused space in the retrofit, providing micro-actuation at a much lower cost (no motors, minimal electronic control, etc.) and with finer tuning resolution (e.g., <1 mm travel range). In other embodiments, motor actuation (eg, a motor with a ball screw) tuning provides a retrofittable solution that also provides micro-actuation at finer tuning resolution (eg, <5 mm travel range).

[0041] With the above general understanding of the various embodiments, exemplary details of the embodiments will now be described with reference to the various figures. Components and / or parts with similar numbers in one or more of the figures are generally intended to have the same configuration and / or function. Furthermore, the figures may not be drawn to scale, but are intended to illustrate and emphasize novel concepts. It will be apparent that embodiments of the present invention may be practiced without some or all of these specific details. On the other hand, well-known processing operations will not be described in detail herein to avoid unnecessarily obscuring the understanding of the embodiments of the present invention.

[0042] Figure 1A reactor system 100 is described that can be used to deposit films on substrates, such as those formed in PECVD or ALD processes. These reactors can utilize two or more heaters and, in this exemplary reactor, a common terminal configuration can be used to control temperature for uniformity or custom settings. More particularly, Figure 1 A substrate processing system 100 for processing a wafer 101 is illustrated. The system includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. A central support column is configured to support a pedestal 140, which, in one embodiment, is a powered electrode. The pedestal 140 is electrically coupled to a power source 104 via a matching network 106. The power source is controlled by a control module 110 (e.g., a controller). The control module 110 is configured to operate the substrate processing system 100 by executing process inputs and controls 108. The process inputs and controls 108 may include process recipes, such as power levels, timing parameters, process gases, mechanical movement of the wafer 101, etc., to, for example, deposit or form a film on the wafer 101.

[0043] The center support (also referred to as the center shaft) also includes lift pins (not shown), each of which is actuated by a corresponding lift pin actuation ring 120, such as controlled by a lift pin controller 122. The lift pins are used to lift the wafer 101 from the pedestal 140 to allow the end effector to pick up the wafer and lower the wafer 101 after placement by the end effector. The substrate processing system 100 also includes a gas supply manifold 112 connected to a process gas 114 (e.g., a facility's gas chemistry supply). Depending on the process being performed, the control module 110 controls the delivery of the process gas 114 through the gas supply manifold 112. The selected gas then flows into the showerhead 150 and is distributed in the volume of space defined between the face of the showerhead 150 facing the wafer 101 and the wafer 101 resting on the pedestal 140. In an ALD process, the gas can be a reactant selected to absorb or react with the absorbed reactant.

[0044] Furthermore, the gases may or may not be premixed. Appropriate valve control and mass flow control mechanisms may be employed to ensure that the correct gases are delivered during the deposition and plasma treatment phases of the process. The process gases exit the chamber via an outlet. A vacuum pump (e.g., a single or two-stage mechanical dry pump and / or a turbomolecular pump) extracts the process gases through a closed-loop controlled flow limiting device (e.g., a throttle valve or pendulum valve) and maintains an appropriate low pressure within the reactor.

[0045] Also shown is an edge ring 430 (e.g., a carrier ring, focus ring, etc.), which surrounds the outer and / or peripheral region of the pedestal 140. The edge ring 430 is used to shape the deposition profile near the edge of the wafer 101. The edge ring 430 is configured to sit above an annular region that is a step down from the wafer support region within the center of the pedestal 430. The edge ring 430 includes an outer edge side (e.g., an outer radius) of its dished structure and a wafer edge side (e.g., an inner radius) where the dished structure is closest to the wafer 101. The wafer edge side of the carrier ring includes a plurality of contact support structures that are used to lift the wafer 101 when the edge ring 430 (e.g., a carrier ring) is lifted by the spider fork 180. The edge ring 430 (e.g., a carrier ring) is thus lifted along with the wafer 101 and can be rotated to another station, for example, in a multi-station system. In other embodiments, the chamber is a single-station chamber.

[0046] Also shown is a ring adjuster subassembly comprising an adjuster flange (not shown), a sleeve 469, and a plurality of ring adjuster pins 445. The adjuster pins 445 are connected to the ring adjuster plate 440. One or more adjuster actuators (not shown), controlled by the edge ring adjuster pin control 124, actuate the vertical movement of the ring adjuster subassembly and, accordingly, the vertical movement of the adjuster pins 445. The adjuster pins 445 are used to raise and lower radial portions of the edge ring 430 to adjust the relative capacitance of the RF flow path through the wafer or edge ring. In this manner, the deposition profile near the edge of the wafer can be tuned by adjusting the relative capacitance of the flow path at the edge. A favorable edge profile can be achieved based on the film properties of a specific recipe or wafer (e.g., varying between custom wafer types), which significantly influence the deposition edge profile. In this way, radial uniformity of the deposition profile can be achieved, particularly near the edge of the wafer.

[0047] Figure 2 A top view of a multi-station processing tool is illustrated, in which four processing stations are arranged. This top view is of the lower chamber portion 102b (e.g., with the upper chamber portion 102a removed for illustration), with the four stations accessed via spider forks 226. Each spider fork, or fork, includes a first arm and a second arm, each positioned around a portion of a respective side of the susceptor 140. In this view, the spider forks 226 are depicted in dashed lines to indicate that they are positioned below an edge ring 430 (e.g., a carrier ring, focus ring, etc.). Using the engagement and rotation mechanism 220, the spider forks 226 are configured to simultaneously raise and elevate the edge ring 430 from multiple stations (i.e., from the lower surface of the edge ring 430), and then rotate at least one or more stations before lowering the edge ring 430 (where at least one edge ring supports a wafer 101) to the next position so that further plasma treatment, processing, and / or film deposition can occur on the corresponding wafer 101.

[0048] Figure 3 A schematic diagram of an embodiment of a multi-station processing tool 300 is illustrated having an inbound load lock 302 and an outbound load lock 304. A robot 306 is configured to move substrates from a cassette loaded from a wafer cassette 308 into the inbound load lock 302 via an atmospheric port 310 at atmospheric pressure. The inbound load lock 302 is coupled to a vacuum source (not shown) so that when the atmospheric port 310 is closed, the inbound load lock 302 can be evacuated. The inbound load lock 302 also includes a chamber transfer port 316 that interfaces with the processing chamber 102b. Thus, when the chamber transfer port 316 is open, another robot (not shown) can move substrates from the inbound load lock 302 to the pedestal 140 of the first processing station for processing.

[0049] The process chamber 102b depicted contains four process stations. Figure 3 The illustrated embodiment is numbered 1 through 4. In some embodiments, the processing chamber 102b can be configured to maintain a low pressure environment so that substrates can be transferred between processing stations using an edge ring 430 (eg, carrier ring 430A) without experiencing vacuum break and / or air exposure. Figure 3 Each of the processing stations described in includes a processing station substrate holder (shown at 318 for station 1) and a process gas delivery line inlet.

[0050] Figure 3 Also depicted is a spider fork 226 for transporting substrates within processing chamber 102b. Spider fork 226 rotates and enables wafer transfer from one station to another. This transfer occurs by enabling spider fork 226 to lift a carrier ring edge ring 430 (e.g., carrier ring 430A) from its outer bottom surface, thereby lifting the wafer and rotating the wafer and carrier together to the next station. In one configuration, spider fork 226 is made of a ceramic material to withstand high levels of heat during processing.

[0051] Figure 4A A pedestal assembly 400A is shown, configured to accommodate a wafer for a deposition process, such as a PECVD or ALD process. The pedestal includes a central top surface 402 defined by a circular area extending from a central axis 420 of the pedestal to a top surface diameter 422, which defines an edge of the central top surface 402. The central top surface 402 includes a plurality of wafer supports 404 defined on the central top surface 402 and configured to support a wafer at a support height above the central top surface. When the wafer is placed on the wafer supports, the wafer support height is defined by the vertical position of the bottom surface of the wafer. Also shown is a recess 406 for accommodating lift pins. As described above, the lift pins can be used to lift the wafer from the wafer support to allow engagement by an end effector.

[0052] In some embodiments, each wafer support defines a minimum contact area (MCA). The MCA is used to improve the precision fit between surfaces to reduce the risk of defects when high precision or close tolerances are required and / or minimal physical contact is desired. Other areas in the system can employ MCAs, such as on edge ring supports, on the annular ring supporting the edge ring, and on the inner wafer support area of ​​the edge ring, as further described below.

[0053] Base assembly 400A also includes an annular surface 410 that extends from a base top surface diameter 422 (which is located at the outer edge of central top surface 402) to an annular surface outer diameter 424. Annular surface 410 defines an annular region surrounding central top surface 402, but at a step down from central top surface 402. That is, annular surface 410 is vertically positioned lower than central top surface 402.

[0054] A plurality of edge ring supports 412a, 412b, and 412c are positioned substantially at / along the edge (outer diameter) of annular surface 410 and are symmetrically distributed around the annular surface. In some embodiments, the edge ring supports may define MCAs 504 for supporting corresponding edge rings. MCAs 504 may be located at one or more locations on annular surface 410. In some embodiments, edge ring supports 412a, 412b, and 412c extend beyond the outer diameter 424 of the annular surface, but in other embodiments, they do not. In some embodiments, the top surface of the edge ring supports has a height slightly greater than that of annular surface 410, such that when the edge ring is placed on the edge ring support, the edge ring is supported a predetermined distance above annular surface 410. Each edge ring support may include a recess, such as recess 413 of edge ring support 412a, into which an extension protruding from the underside of the edge ring is placed when the edge ring is supported by the edge ring support. The engagement of the edge ring extension with the recess in the edge ring support provides secure positioning of the edge ring and prevents movement of the edge ring when placed on the edge ring support.

[0055] In some embodiments, the edge ring support 412 is flush with the annular surface 410, or in some embodiments, there is no edge ring support separately defined from the annular surface, so that the edge ring can be placed directly on the annular surface. As a result, there is no gap between the edge ring and the annular surface 410. In such embodiments, the path between the edge ring and the annular surface 410 is closed, thereby preventing precursors from passing through this path to the back side of the wafer.

[0056] In the illustrated embodiment, there are three edge ring supports 412a, 412b, and 412c symmetrically positioned along the outer edge region of the annular surface. However, in other embodiments, there may be three or more edge ring supports distributed anywhere along the annular surface of the base assembly 400A to support the edge ring in a stable placement configuration.

[0057] It should be understood that in some embodiments, when the wafer is supported by the wafer support and the edge ring is supported by the edge ring support, the edge region of the wafer is disposed above the inner portion of the edge ring. Generally, the edge region of the wafer extends inwardly from the outer edge of the wafer by about two to five millimeters (mm). Thus, a vertical spacing is defined between the edge region of the wafer and the inner portion of the edge ring.

[0058] It will be appreciated that the support of the edge ring at a distance above the annular surface 410 and the spacing between the wafer edge region and the inner portion of the edge ring are adjusted to limit deposition on the wafer backside in the edge region of the wafer (e.g., to minimize plasma formation in the gap below the wafer edge and above the annular surface 410) and / or for recipe control adjustment of the edge profile by tuning the relative capacitance between RF flow paths at one or more points along the outer edge of the wafer in accordance with embodiments of the present disclosure. In particular, the ring adjuster assembly is configured to lift the edge ring at one or more points (e.g., radial points) along the outer periphery of the edge ring.

[0059] In an embodiment, the edge ring is lifted at one point (e.g., to provide improved radial uniformity) and / or three or more points (e.g., to provide improved radial and azimuthal uniformity) to change the deposition profile and adjust it based on a specific recipe or film property. Lifting at a single point enables vertical adjustment. Lifting at three points enables vertical adjustment and rotation about two horizontal planar axes (e.g., to provide tilt). Lifting at more than three points enables vertical adjustment and rotation about multiple horizontal planar axes (e.g., to provide tilt). In this regard, the ring adjuster assembly is configured to provide elevation and tilt of the edge ring relative to the central top surface 402 of the base 140. In an embodiment, the edge ring has a range of motion of less than 0.5 millimeters (mm). In other embodiments, the edge ring has a range of motion of less than 1.0 mm. In still other embodiments, the edge ring has a range of motion of less than 5.0 mm. In still other embodiments, the edge ring has a range of motion of less than 10.0 mm.

[0060] The ring adjuster assembly includes at least one adjuster plate 440 and a plurality of ring adjuster pins 445. In particular, the plurality of ring adjuster pins 445 are connected to the adjuster plate 440 and the ring adjuster pins 445 extend vertically from the adjuster plate 440. Each of the ring adjuster pins 445 is positioned at a corresponding location on the adjuster plate 440 that is adjacent to and outside of the diameter 149 of the base 140. More particularly, the plurality of ring adjuster pins 445 are configured to contact an edge lower surface (not shown) of an edge ring. As shown, the plurality of ring adjuster pins 445 include three ring adjuster pins 445a, 445b, and 445c that are equally spaced radially from one another about a horizontal plane. Each of the ring adjuster pins is independently movable in a vertical direction and, when contacting the edge ring, limits the elevation and tilting of the edge ring relative to a top surface of the base (e.g., the central top surface 402). Actuation reference of the plurality of ring adjuster pins 445 Figures 5A-5C , 6A, and 7A are further described below.

[0061] According to an embodiment of the present invention, Figure 4B A perspective cross-sectional view of a portion of the pedestal 140 of the pedestal assembly 400A is shown. The cross-sectional view is a longitudinal section intersecting an edge ring support (e.g., edge ring support 412a). Edge ring 430 is shown positioned atop edge ring support 412a. In this configuration, edge ring extension 431 is positioned within recess 413 of edge ring support 412a. Also, wafer 101 is shown positioned above the central top surface 402 of the pedestal (supported by a wafer support, not shown). Edge ring support 412a is height-adjustable to allow adjustment of the distance above annular surface 410 where the edge ring is supported. In some embodiments, the edge ring support may define an MCA, or the MCA 504 may be positioned separately on annular surface 410 instead of using edge ring support 412. In some embodiments, edge ring support 412a includes spacers (e.g., shims) 416 for adjusting the height of at least one of the edge ring supports. That is, the spacers 416 are selected to provide a controlled distance between the edge ring 430 and the annular surface 410 when the edge ring is placed on the edge ring support 412. Furthermore, as will be described further below, the positioning (e.g., vertical placement and tilt) of the edge ring relative to the central top surface 402 of the pedestal 140 can be adjusted for recipe-controlled tuning of the edge deposition profile of the wafer by tuning the relative capacitance between the RF flow paths at one or more points along the outer edge of the wafer.

[0062] Additionally, edge ring support 412a and spacers 416 are secured to the base via fastening hardware 414. In some embodiments, hardware 414 may be screws, bolts, nails, pins, or any other type of hardware suitable for securing edge ring support 412 and spacers 416 to the base. In other embodiments, other techniques / materials for securing edge ring support 412 and spacers 416 to the base may be employed, such as a suitable adhesive.

[0063] According to one embodiment of the present disclosure, Figure 4C Figure 400C illustrates the relative capacitance of a flow path encountered near the edge of a wafer (not shown) disposed on a pedestal 140. As shown, a pedestal assembly 400C includes at least one pedestal 140 configured to support a substrate (e.g., a wafer) (not shown). The pedestal 140 may include one or more heating and / or cooling channels 480 configured for temperature control of the pedestal. The pedestal assembly 400C includes a ring or edge ring (e.g., a carrier ring, a focus ring, etc.) configured for placement along the perimeter of the pedestal. As shown in the pedestal assembly 400C, the edge ring 430 is positioned adjacent to an annular surface located on an edge of the central top surface 402 of the pedestal, wherein the annular surface may be a step down from the central top surface.

[0064] As previously described, the pedestal assembly 400C includes a ring adjuster subassembly configured to position the edge ring relative to the central top surface 402 of the pedestal 140 (e.g., vertical placement and tilt). The edge ring positioning enables recipe-controlled tuning of the relative capacitance between the RF flow paths at one or more points along the outer edge of the wafer to optimize the edge deposition profile of the wafer disposed on the central top surface 402 of the pedestal 140. As shown, the edge lower surface of the edge ring 430 contacts a plurality of ring adjuster pins 445 that are connected to the adjuster plate 440 at a location adjacent to and external to the pedestal 140. The ring adjuster pins 445 extend vertically from the adjuster plate 440. For example, the edge ring 430 is contacted by the ring adjuster pins 445b, as shown in FIG. Figure 4C shown.

[0065] When the pedestal assembly 400C is in operation (e.g., processing a wafer), two distinct RF flow paths exist. Considering a wafer disposed on the central top surface 402 of the pedestal 140 and undergoing processing, one RF flow path 470b passes through the wafer, and a second RF flow path 470a passes through, for example, an edge ring near the edge of the wafer.

[0066] In particular, the RF flow path 470b through the wafer (not shown) is described below. RF power originates at a source (e.g., showerhead 150), travels through the wafer (not shown, but generally downward toward the central top surface 402 of the pedestal 140), passes through a small air gap between the wafer and the central top surface 402 of the pedestal 140, and is grounded to the pedestal 140. According to one embodiment of the present disclosure, Figure 4C-2 The total capacitance of the RF flow path 470b through the wafer to the pedestal 140 is shown. The wafer capacitance (e.g., C 晶片 ) and air capacitor (C 空气 ) For example, both are constant and coupled in series with ground.

[0067] The capacitance is defined below by equation (1), where C is the capacitance (in farads); A is the overlapping area of ​​the two plates (in square meters); ε r is the relative static permittivity (sometimes called the dielectric constant) of the material between the plates (e.g. for vacuum, ε r =1); ε0 is the electrical constant (e.g. ε0≈8.854×10 -12 F·m -1 ); and d is the spacing between the plates (in meters).

[0068]

[0069] The following describes an RF flow path 470a through an edge (e.g., carry / focus) ring 430. RF power originates at a source (e.g., showerhead 150), travels through edge ring 430, passes through a small air gap between edge ring 430 and the susceptor, and is grounded to susceptor 140. Using DSC, a carry ring lift (CRL) or edge ring lift mechanism is implemented, for example, at three points (or any variable number of points) to adjust the air gap between edge ring 430 and susceptor 140. Because the capacitance of air is approximately 1 / 10 (one-tenth) the capacitance of silicon (e.g., a wafer) or aluminum oxide (an edge ring), a very small change in the air gap results in a large change in the capacitance of RF flow path 470a through edge ring 430. The ability to dynamically adjust the relative capacitance between the two paths 470a and 470b enables tuning of edge deposition profiles that are highly dependent on other film properties that may vary between custom wafer types. Tuning the capacitance of the two RF flow paths reduces radial non-uniformity in the deposition profile. Additionally, the ability to independently lift the edge ring 430 at three or more points (e.g., tilt) also enables correction of any azimuthal asymmetry that occurs near the edge. Figure 4C-1 The total capacitance of the RF flow path 470a through the edge ring to the pedestal is shown. The edge ring capacitance (e.g., C 环 ) and air capacitors (such as C 空气) is coupled in series with ground. The edge ring capacitance is constant. On the other hand, in embodiments of the present disclosure, the air capacitance (e.g., C 空气 ) can be tuned by adjusting the elevation and tilt of one or more points along the perimeter of the edge ring relative to the central top surface 402 of the base 140.

[0070] Without adjusting the positioning of the edge ring (e.g., placing the edge ring on the annular surface 410 of the pedestal 140), the interface between the outer edge of the wafer and the inner edge of the edge ring (e.g., through the RF flow paths 470a and 470b) can create undesirable electrical discontinuities that can create voltage gradients that affect the plasma sheath. For example, a thin edge ring is generally associated with a deposition plating profile that is thin in the center of the wafer and thick at the edges (see line 471). And, a thick edge ring is generally associated with an opposite deposition plating profile that is thick in the center of the wafer and thinner at the edges (see line 472). On the other hand, tuning provides a more uniform deposition profile, particularly at the edge of the wafer, as shown by line 475.

[0071] Figure 5A According to one embodiment of the present disclosure, a base assembly configuration including an edge ring (e.g. Figure 4C Figure 400C shows a top view of a pedestal assembly 400C configured for recipe-controlled tuning of the relative capacitance between RF flow paths at one or more points along the outer edge of a wafer to optimize the edge deposition profile of a wafer disposed on the pedestal. As shown, the pedestal assembly includes a carry ring 430A supported on an annular surface disposed at the periphery of an underlying pedestal. Carry ring 430A includes an inner edge 433 positioned adjacent to the diameter of the central top surface 402 of the pedestal and capable of being positioned directly below the bottom edge of the wafer for wafer lifting purposes.

[0072] Carrier ring 430A also includes an outer edge 432 from which one or more tongues or radial extensions radiate outward (e.g., radiating radially outward from the center of carrier ring 430A). For example, carrier ring 430A includes three tongues 435a, 435b, and 435c. In one embodiment, the tongues are positioned equidistant from one another (e.g., at equal radial distances) in a horizontal plane defined by the top surface of carrier ring 430A. The lower surface of one or more tongues is each aligned to contact a corresponding ring adjuster pin for lift to implement dynamic sheath control (DSC). That is, each of the tongues extends outward to a maximum diameter. This maximum diameter also corresponds to the outer diameter of focus ring 430B (outlined in dashed lines). In particular, DSC is achieved by independent vertical movement of contact points in contact portions (e.g., tongues) of carrier ring 430A when actuated by corresponding DSC adjuster actuators. For example, each of the ring adjuster pins is actuated (e.g., moved vertically) using a corresponding DSC adjuster actuator 505. For example, ring adjuster pin 445a (not shown) contacts tongue 435a and is actuated using DSC adjuster actuator A (505a). Also, ring adjuster pin 445b (not shown) contacts tongue 435b and is actuated using DSC adjuster actuator B (505b). In addition, ring adjuster pin 445c (not shown) contacts tongue 435c and is actuated using DSC adjuster actuator C (505c). As previously described, each of the ring adjuster pins 445 is connected to the adjuster plate at a position adjacent to the diameter of the base 140 and outside thereof, wherein the ring adjuster pin 445 extends vertically from the adjuster plate 440. The actuation of the ring adjuster pins 445 is described below with reference to Figure 5C 、 6A , and 7A further illustrate.

[0073] Figure 5B According to one embodiment of the present disclosure, a base assembly (e.g. Figure 4C A top view of a pedestal assembly 400C (shown in FIG. 4 ) is provided, which is configured for recipe-controlled tuning of the relative capacitance between RF flow paths at one or more points along the outer edge of a wafer to optimize the edge deposition profile of a wafer disposed on the pedestal. As shown, the pedestal assembly includes a focus ring 430B supported on an annular surface disposed at the periphery of the underlying pedestal. Focus ring 430B includes an inner edge 435 positioned approximately along the diameter of the central top surface 402 of the pedestal and positioned directly below the bottom of the wafer edge to fill any gap between the wafer edge and the annular surface, thereby minimizing plasma formation in the gap.

[0074] Focus ring 430B also includes an outer rim 436 that is radially uniform and defines the outer diameter of focus ring 430B. Outer rim 436 is configured so that the lower surface at the edge of focus ring 430B contacts corresponding ring adjuster pins for lifting to implement dynamic sheath control (DSC). Outer rim 436 or outer diameter also corresponds to the maximum diameter (e.g., at the tongue) of the carrier ring, with carrier ring 430A shown in outline (e.g., dashed lines). In particular, DSC is achieved by independent vertical movement of the contact points of focus ring 430B when actuated by corresponding DSC adjuster actuators. For example, each of the ring adjuster pins is actuated (e.g., vertically moved) using a corresponding DSC adjuster actuator 505. For example, ring adjuster pin 445a (not shown) contacts the lower surface of the periphery of focus ring 430B and is actuated using DSC adjuster actuator A (505a). Furthermore, the ring adjuster pin 445b (not shown) contacts the lower surface of the periphery of the focus ring 430B and is actuated by the DSC adjuster actuator B (505b). In addition, the ring adjuster pin 445c (not shown) contacts the lower surface of the periphery of the focus ring 430B and is actuated by the DSC adjuster actuator C (505c). As previously described, each of the ring adjuster pins 445 is connected to the adjuster plate at a position adjacent to the diameter of the base 140 and outside thereof, wherein the ring adjuster pin 445 extends vertically from the adjuster plate 440. The actuation of the ring adjuster pin 445 is described below with reference to Figure 5C 、 6A , and 7A further illustrate.

[0075] According to one embodiment of the present disclosure, Figure 5C Shows approximately Figure 5A or base assembly obtained from line XX of 5B (e.g. Figure 4C 4 (c) and (d) in a cross-sectional view of a pedestal assembly 400C configured with dynamic sheath control to lift a radial portion of a carrier ring to adjust the relative capacitance of an RF flow path through a wafer or edge ring (e.g., a carrier ring, focus ring, etc.).

[0076] The pedestal assembly includes a pedestal 140 for supporting a substrate (e.g., a wafer) (not shown). For illustrative purposes only, pedestal 140 is shown as having two sections 140a and 140b. For example, pedestal 140 can be formed in two sections to accommodate shaping during the manufacture of multiple heating and / or cooling components implemented through channel 480. As previously disclosed, it should be understood that pedestal 140 is considered a single component. Although pedestal 140 may be described as having a generally circular shape when viewed from above, the footprint of pedestal 140 can vary from a circular shape to accommodate different features, such as a carrier ring support, a focus ring, and an end effector passageway.

[0077] In one embodiment, the pedestal 140 includes a central top surface 402 extending from a central axis 420 of the pedestal to a central top surface diameter 422. One or more wafer supports 404 (e.g., MCAs) can be defined on the central top surface 402 and configured to support a substrate (e.g., a wafer) at a height above the central top surface 402. Additionally, an annular surface 410 extends from the central top surface diameter 422 to an outer diameter 424 of the annular surface 410. In one embodiment, the annular surface 410 is configured at a step down from the central top surface 402. One or more edge ring supports 504 (e.g., MCAs) can be defined on the annular surface 410 and configured to support an edge ring.

[0078] The base 140 includes a central shaft 510 that positions the base at a certain height during operation. As shown, the base 140 is connected to a base actuator 515 configured to control the movement of the base. In particular, the central shaft 510 is coupled to the actuator 515 and the base 140 such that the central shaft 510 extends between the actuator 515 and the base 140. The central shaft 510 is configured to move the base 140 along the central axis 420. In this regard, the movement of the actuator 515 is converted into vertical movement of the central shaft 510, which is then converted into vertical movement of the base 140.

[0079] The ring 430 is configured to be placed along the perimeter of the base 140. The ring 430 is generally shown at Figure 5C In one embodiment, the ring 430 includes a carrier ring 430A including a plurality of tongues extending to a maximum outer diameter of the carrier ring. In another embodiment, the ring 430 includes a focus ring 430B, wherein the focus ring has a radially uniform outer diameter. The ring 430 is positioned adjacent the annular surface 410 and extends beyond the diameter 149 of the base 140 at least at a plurality of extensions of the ring. That is, the ring 430 may include one or more radial extensions (e.g., each tongue or radial extension aligns with a corresponding ring adjuster pin) in the case of a carrier ring, or may have a radially uniform diameter in the case of a focus ring, such that the maximum radial distance of the extensions of the carrier ring or the diameter of the focus ring extends beyond the diameter 149 of the base 140 to enable contact with the adjuster pin for the purpose of lifting the ring 430. As Figure 5C As shown, ring 430 is in contact with ring adjuster pin 445a and is also in contact with ring adjuster pin 445b.

[0080] Figure 5CThe pedestal assembly includes a ring adjuster subassembly configured to position the edge ring 430 relative to the central top surface 402 of the pedestal 140 (e.g., vertically positioned and tilted). In this manner, recipe-controlled tuning of the relative capacitance between the RF flow paths at one or more points along the wafer's outer edge (e.g., through the edge ring 430 or through the wafer) is achieved to optimize the wafer edge deposition profile. In particular, the ring adjuster subassembly includes an adjuster flange 542 disposed about a mid-section of the central axis 510. Furthermore, a sleeve 469 is coupled to the adjuster flange 542 and extends from the adjuster flange 542 to the adjuster plate 440 disposed below the pedestal 140. In one embodiment, the sleeve 469 includes a flared tube 460 coupled to the adjuster plate 440. The sleeve 469 also includes a cylindrical portion 465, or sheath, coupled to the adjuster flange 542. The cylindrical portion 465 is adjacent to the central axis 510 but is configured to move independently relative to the central axis. For example, the cylindrical portion and / or sleeve 469 is configured to move relative to and independently of the central axis 510 .

[0081] A plurality of ring adjuster pins 445 are connected to the adjuster plate 440. Each of the ring adjuster pins 445 extends vertically from the adjuster plate 440. Furthermore, each of the ring adjuster pins 445 is positioned on the adjuster plate 440 at a corresponding location adjacent to and external to the diameter 149 of the base 140. In this manner, each ring adjuster pin is configured to contact the lower edge surface of the ring 430. As shown, ring adjuster pins 445a and 445b contact the lower edge surface of the ring 430 at locations adjacent to and external to the diameter of the base. Similarly, a third ring adjuster pin 445c (not shown) may be configured to contact the lower edge surface of the ring 430.

[0082] The adjuster flange 542 is coupled to one or more adjuster actuators for limiting the elevation and / or tilting of the ring 430 relative to the central top surface 402 of the base 140. In one embodiment, the adjuster flange 542 is coupled to three adjuster actuators for limiting the elevation and tilting of the ring 430 relative to the central top surface 402 of the base 140. As shown, the adjuster flange 542 is connected and / or coupled to DSC adjuster actuator A (505a) to control the vertical movement of the ring adjuster pin 445a, and is connected and / or coupled to DSC adjuster actuator B (505b) to control the vertical movement of the ring adjuster pin 445b. Similarly, a third DSC adjuster actuator C (505c) (not shown) is connected and / or coupled to the adjuster flange and is configured to control the vertical movement of the ring adjuster pin 445c.

[0083] In particular, each of the adjuster actuators is connected to the adjuster flange 542 and is aligned with a contact point on the sleeve, and / or the cylindrical portion 465 of the sleeve, or the sheath. The contact points can be radially equidistantly spaced from each other around a horizontal plane. In addition, the contact points correspond to and / or align with the ring adjuster pins. Specifically, the adjuster plate 440 includes a plurality of arms (e.g., radial extensions) corresponding to the contact points. For example, each arm is aligned with a corresponding contact point. In addition, a plurality of ring adjuster pins are connected to the ends of the plurality of arms at a position adjacent to the diameter 149 of the base 140 and outside thereof. Therefore, the contact points on the adjuster flange 542, the plurality of arms of the adjuster plate 440, and the plurality of ring adjuster pins 445 are aligned.

[0084] In this regard, vertical movement of corresponding contact points on the adjuster flange 542 (e.g., through corresponding actuator interactions) is transmitted to corresponding adjuster pins through the sleeve 469 and the adjuster plate 440. For example, DSC adjuster actuator A (505a) actuates corresponding contact points on the adjuster flange 542 to impart vertical movement, which is also transmitted (e.g., through the cylindrical portion 465 or sheath and bell tube 460) to corresponding arms or radial extensions of the adjuster plate 440, which are transmitted to corresponding ring adjuster pins 445a. Similarly, DSC adjuster actuator B (505b) actuates corresponding contact points on the adjuster flange 542, which are transmitted to corresponding arms of the adjuster plate 440, which are transmitted to corresponding ring adjuster pins 445b. Furthermore, the DSC adjuster actuator C (505c) actuates a corresponding contact point on the adjuster flange 542, which is transmitted to a corresponding arm of the adjuster plate 440, and which is transmitted to a corresponding ring adjuster pin 445c. In this manner, by adjusting the position (e.g., vertical movement and tilt) of the ring 430 relative to the central top surface 402 of the pedestal 140, this enables recipe-controlled tuning of the relative capacitance between the RF flow paths at one or more points along the outer edge of the wafer to optimize the edge deposition profile of a wafer disposed on the central top surface 402.

[0085] Additionally, one or more hard stops 450 are located on the adjuster plate 440. The hard stops 450 serve to limit upward vertical movement of the adjuster plate 440 relative to the susceptor 140. In this manner, vertical movement of the adjuster plate 440 can be limited to avoid damage to the susceptor 140 and / or to prevent the ring 430 from contacting the lower surface of the wafer.

[0086] Figure 5D-1 Dimensions of a ring 430 (e.g., a carrier ring, a focus ring, etc.) configured to tune the relative capacitance of an RF flow path through a wafer or ring are shown according to an embodiment of the present disclosure. In particular, Figure 5D-1 Shown in more detail Figure 5CThe base 140 of the pedestal assembly and the outer region 565 of the ring 430 are shown. In particular, the pedestal assembly is configured to elevate the ring 430 at one or more points to facilitate recipe-controlled tuning of the relative capacitance between the RF flow paths at one or more points along the outer edge of the wafer.

[0087] As shown, the pedestal assembly includes a pedestal 140 having a central top surface 402. The central top surface 402 may include one or more MCAs 404. The pedestal 140 includes an annular surface 410 located at a step down from the central top surface (e.g., at a low distance D9). A wafer 101 having a thickness D2 is disposed at a wafer support height D6 above the central top surface 402, such as provided by the MCAs 404.

[0088] Ring 430 is placed on annular surface 410, such as on MCA 504 or ring support 412 as previously described. Ring 430 can be separated from annular surface 410 by a distance D4, such as achieved by the MCA or ring support. Ring 430 has a conventional thickness D1. Furthermore, ring 430 includes an inner edge 433 (e.g., for carry ring 430A) or 435 (e.g., for focus ring 430B). For illustrative purposes, inner edges 433 / 435 of both carry ring 430A and focus ring 430B can be similarly configured to include a step 560 having a surface 561 that sits directly below the lower surface of wafer 101 disposed on central top surface 402. Step 560 has a thickness shown as D5 and defines a spacing D3 between surface 561 of step 560 and central top surface 402, which generally corresponds to the lower surface of wafer 101. In an embodiment of the present disclosure, the thickness D5 of the step 560 is thinner than a typical ring thickness to provide lift of the ring 430 , thereby providing adjustability of the vertical spacing and / or tilt of the ring 430 relative to the central top surface 402 .

[0089] Generally, for the purpose of minimizing plasma formation in the gap between the lower surface of the wafer and the annular surface 410, the distance D3 is close to zero to minimize the gap. However, in one embodiment, the distance D3 is increased to allow for the implementation of DSC, and as shown in FIG. Figure 5D-2 (It shows Figure 5D-1susceptor assembly is shown in a raised position). As shown, according to one embodiment of the present disclosure, ring 430 is elevated from annular surface 410. Specifically, ring 430 is elevated by at least ring adjuster pin 445a such that surface 561 of step 560 approaches the underside of wafer 101. That is, distance D3′ between surface 561 and central top surface 402 approaches zero. In this regard, ring 430 is spaced apart from the annular surface such that it does not contact MCA 504 or annular surface 410. For example, it should be understood that ring 430 can be raised to any height to adjust distance D3, as long as the ring (e.g., surface 561) does not contact wafer 101.

[0090] Figure 5D-3 Dimensions of a thin ring 430' (e.g., a load ring, focus ring, etc.) configured to tune the relative capacitance of an RF flow path through a wafer 101 or ring 430' are shown according to an embodiment of the present disclosure, wherein the load / focus ring is disposed on an annular surface. In particular, Figure 5D-3 Shown in more detail Figure 5C The base assembly is shown with respect to the base 140 and the outer region 565 of the ring 430. In particular, Figure 5D-3 The pedestal assembly is configured to elevate the ring 430 at one or more points to facilitate recipe-controlled tuning of the relative capacitance between the RF flow paths at one or more points along the periphery of the wafer. Figure 5D-3 The base component is similar to Figure 5D-1 The base assembly, except that the thickness D1 of the ring 430' is less than Figure 5D-1 and 5D-2 This provides additional tuning of the relative capacitance between the RF flow paths by selecting a ring with a specific thickness (eg, replacing the ring to obtain the optimal thickness for the recipe and wafer type).

[0091] In particular, Figure 5D-34. The ring 430' is shown disposed on the annular surface 410, such as on the MCA 504 or on the ring support 412. The ring 430' can be separated from the annular surface 410 by a distance D4. The inner edges 433 / 435 of both the carry ring 430A and the focus ring 430B can be similarly configured to include a step 560' having a surface 561' that sits directly below the lower surface of the wafer 101 disposed on the central top surface 402. The step 560' has a thickness shown as D15 and defines a spacing D13 between the surface 561' of the step 560' and the central top surface 402, which generally corresponds to the lower surface of the wafer 101. In an embodiment of the present disclosure, the thickness D15 of the step 560' is thinner than that of a typical ring to provide lift for the ring 430', thereby providing adjustability in the vertical spacing and / or tilt of the ring 430' relative to the central top surface 402.

[0092] As previously described, generally, for the purpose of minimizing plasma formation in the gap between the lower surface of the wafer 101 and the annular surface 410, the distance D13 is close to zero to minimize the gap. However, in one embodiment, the distance D13 is increased to allow for the implementation of DSC, and as shown in FIG. Figure 5D-4 (It shows Figure 5D-3 susceptor assembly is shown in a raised position). In particular, according to one embodiment of the present disclosure, ring 430' is raised from annular surface 410. As shown, ring 430 is raised by at least ring adjuster pin 445a such that surface 561' of step 560' approaches the underside of wafer 101. That is, distance D13' between surface 561' and central top surface 402 approaches zero. Thus, ring 430' is spaced apart from the annular surface such that it does not contact MCA 504 or annular surface 410. For example, it should be understood that ring 430' can be raised to any height to adjust distance D13, as long as the ring (e.g., surface 561') does not contact wafer 101.

[0093] Figure 6A A cross-sectional view of a susceptor assembly incorporating dynamic sheath control to lift a radial portion of a carrier ring to adjust the relative capacitance of an RF flow path through a wafer or carrier ring is shown according to an embodiment of the present disclosure. Figure 5A For example, the pedestal assembly is included in a substrate processing system. Figure 6A The base assembly can be realized in Figure 1-3 systems, including implementation in multi-station and single-station processing tools.

[0094] The pedestal assembly includes a pedestal 140 for supporting a substrate, wherein the pedestal 140 includes a central axis 510 for positioning the pedestal at a certain height during operation. As previously described, the pedestal includes a central top surface. The carrier ring 430A is configured to be placed along the periphery of the pedestal 140. In particular, as previously described, the carrier ring 430A is supported above the annular surface of the pedestal 140. The carrier ring 430A includes a plurality of tongues extending to an outer diameter of the ring. In particular, the carrier ring 430A is positioned adjacent to the annular surface and extends beyond the diameter 149 of the pedestal 140 at least at a plurality of radial extensions of the ring 430A. For example, along Figure 5A Line ZZ is obtained and displayed in Figure 6A In the cross-sectional view of FIG, the carrier ring 430A is extended to its maximum diameter (e.g., using radial arms or extensions) to contact the ring adjuster pin 445b beyond the diameter 149 of the base 140. However, in FIG. Figure 6A On the left side, the carrier ring 430A does not extend to the maximum diameter and only extends to the outer edge 432 (see Figure 5A ), and in this way does not extend beyond the diameter 149 of the base 140.

[0095] The base assembly includes a ring adjuster subassembly. This subassembly includes a lower flange 541 disposed around a lower section of the central shaft 510. The lower flange 541 is configured to maintain a vacuum within the central shaft. The lower flange 541 can be connected to a scoop 525, which is connected to the base actuator, wherein the scoop 525 and lower flange 541 maintain a vacuum within the central shaft 510. The subassembly also includes a lower bellows 530 connected to the lower flange 541. An adjuster flange 542 (e.g., an intermediate flange) is connected to the lower bellows 530 and disposed around a middle section of the central shaft 510. A sleeve is connected to the adjuster flange 542 and extends from the adjuster flange 542 to the adjuster plate 440 disposed below the base 140. The sleeve includes a sheath or cylindrical portion 465 connected to the adjuster flange 542 and adjacent to the central shaft 510. The sheath or cylindrical portion 465 can move independently of the central shaft 510 for DSC implementation purposes, and also moves with the central shaft when DSC is not implemented. The sleeve includes a flared tube connected to the sheath or cylindrical portion 465 and to the adjuster plate 440. The upper bellows 535 is connected to the adjuster flange 542. The upper flange 543 is connected to the upper bellows 535. This flange, bellows, and sleeve arrangement provides for movement of the adjuster plate during DSC implementation.

[0096] As previously described, a plurality of ring adjuster pins 445 are connected to the adjuster plate 440. Each of the ring adjuster pins 445 extends vertically from the adjuster plate 440. In addition, each of the ring adjuster pins 445 is positioned on the adjuster plate 440 at a position adjacent to and outside the diameter 149 of the base 140. In this manner, each ring adjuster pin is configured to contact the lower edge surface of the carrier ring 430A. As shown, the ring adjuster pin 445b contacts the lower edge surface of the carrier ring 430A at a position adjacent to the diameter of the base and outside thereof. Other ring adjuster pins may also contact the lower edge surface of the carrier ring 430A.

[0097] More particularly, the adjuster flange 542 is coupled to one or more adjuster actuators for defining the elevation and / or tilt of the carry ring 430A relative to the central top surface 402 of the base 140. In one embodiment, the adjuster flange 542 is coupled to three adjuster actuators for defining the elevation and tilt of the carry ring 430A.

[0098] In particular, each of the adjuster actuators is connected to an adjuster flange 542 that is aligned with a contact point on the cylindrical portion 435 or sheath of the sleeve, which is further aligned with a ring adjuster pin (e.g., via an arm or radial extension of the adjuster plate 440). Thus, the contact points on the adjuster flange 542, the multiple arms of the adjuster plate 440, and the multiple ring adjuster pins 445 are aligned. In this manner, vertical movement of a corresponding contact point of the adjuster flange 542 (e.g., through interaction with a corresponding actuator) is transmitted to the corresponding adjuster pin. For example, DSC adjuster actuator B (505b) actuates a corresponding contact point on the adjuster flange 542 to impart vertical movement, which is also transmitted to a corresponding arm or radial extension of the adjuster plate 440 (e.g., via cylindrical portion 465 or sheath and flared tube 460), and is transmitted to the corresponding ring adjuster pin 445b. Similar transmission is achieved for the movement of the ring adjuster pins 445a and 445c. In this manner, by adjusting the position (e.g., elevation and tilt) of the carrier ring 430A relative to the central top surface 402 of the pedestal 140, recipe-controlled tuning of the relative capacitance between the RF flow paths at one or more points along the outer edge of the wafer can be achieved to optimize the edge deposition profile of the wafer disposed on the central top surface 402.

[0099] Figure 6B According to one embodiment of the present disclosure, Figure 6AAn isometric view of a pedestal assembly is shown, and includes dynamic sheath control to lift radial portions of a carrier ring 430A, thereby adjusting the relative capacitance of the RF flow path through a wafer (not shown) or carrier ring 430A. Specifically, carrier ring 430A includes tongues 435a, 435b, and 435c that extend beyond diameter 149 of pedestal 140. In this manner, tongues 435a, 435b, and 435c can contact ring adjuster pins 445a, 445b, and 445c, respectively. Ring supports 412a, 412b, and 412c are also shown engaged with carrier ring 430A to prevent lateral movement of the ring.

[0100] Figure 6C A top view of a multi-station processing tool is shown according to one embodiment of the present disclosure illustrating the positioning of the tongues or radial extensions of the carrier ring so that the tongues do not interfere with the walls of the chamber as the carrier ring moves between stations. Figure 1 In the substrate processing system 100, the substrate processing system 100 includes at least a lower chamber portion 102b (shown in FIG. Figure 6C ) and chamber 102 of the upper chamber portion. A multi-station processing tool may include four stations (e.g., stations 1-4), each similarly configured with a pedestal assembly, such as previously described. For example, each pedestal assembly includes a pedestal 140, a carry ring 430A, and a ring adjuster assembly. An index plate 690 is included in the multi-station processing tool. The index plate 690 is configured to simultaneously lift and elevate the carry ring 430A from multiple stations, and then rotate at least one or more stations before lowering the edge ring 430A to the next position so that further plasma treatment, processing, and / or film deposition can be performed on the corresponding wafer.

[0101] The carrier ring 430A is positioned within each of stations 1-4 such that the tongues on each carrier ring 430A do not contact the chamber walls (e.g., the walls of the lower chamber portion 102b) when the carrier ring is rotated. For example, the carrier ring 430A is positioned within station 1 such that tongues 435a, 435b, or 435c do not contact the chamber walls during indexing. As shown, tongue 435b of the carrier ring 430A in station 1 approximately follows arc 691, such that tongue 435b does not contact the chamber walls when indexing a wafer and corresponding carrier ring 430A from station 1 to station 2.

[0102] Figure 7A A cross-sectional view of a pedestal assembly incorporating dynamic sheath control to lift a radial portion of a focus ring to adjust the relative capacitance of an RF flow path through a wafer or focus ring is shown according to an embodiment of the present disclosure. Figure 5B For example, the susceptor assembly is included in a substrate processing system. Figure 7A The base assembly can be realized in Figure 1-3systems, including implementation in multi-station and single-station processing tools.

[0103] The pedestal assembly includes a pedestal 140 for supporting a substrate, wherein the pedestal 140 includes a central axis 510 for positioning the pedestal at a certain height during operation. As previously described, the pedestal includes a central top surface. The focus ring 430B is configured to be positioned along the periphery of the pedestal 140. In particular, as previously described, the focus ring 430B is supported above the annular surface of the pedestal 140. The focus ring 430B has a radially uniform outer diameter. In particular, the focus ring 430B is positioned adjacent the annular surface and extends beyond the diameter 149 of the pedestal 140. For example, along Figure 5B Line ZZ is obtained and displayed in Figure 7A In the cross-sectional view of FIG, the focus ring 430B extends to contact the ring adjuster pin 445b beyond the diameter 149 of the base 140. Because the focus ring 430B has a uniform outer diameter, Figure 7A To the left of FIG. 4 , focus ring 430B also extends outward beyond the diameter 149 of the base, even though it may not contact the corresponding ring adjuster pin.

[0104] The base assembly includes a ring adjuster subassembly. This subassembly includes a lower flange 541 disposed around a lower section of the central shaft 510. Lower flange 541 is configured to maintain a vacuum within the central shaft. Lower flange 541 can be connected to a scoop 525, which is connected to a base actuator, wherein scoop 525 and lower flange 541 maintain a vacuum within the central shaft 510. This subassembly also includes a lower bellows 530 connected to lower flange 541. An adjuster flange 542 (e.g., an intermediate flange) is connected to lower bellows 530 and disposed around a middle section of the central shaft 510. A sleeve is connected to adjuster flange 542 and extends from adjuster flange 542 to adjuster plate 440 disposed below the base 140. The sleeve includes a sheath or cylindrical portion 465 connected to the adjuster flange and adjacent to the central shaft 510. The sheath or cylindrical portion 465 can move independently of the central shaft 510 for DSC implementation purposes, and also moves with the central shaft when DSC is not implemented. The sleeve includes a flared tube connected to the sheath or cylindrical portion 465 and to the adjuster plate 440. The upper bellows 535 is connected to the adjuster flange 542. The upper flange 543 is connected to the upper bellows 535. This flange, bellows, and sleeve configuration provides for movement of the adjuster plate during DSC implementation.

[0105] As previously described, a plurality of ring adjuster pins 445 are connected to the adjuster plate 440. Each of the ring adjuster pins 445 extends vertically from the adjuster plate 440. Furthermore, each of the ring adjuster pins 445 is positioned on the adjuster plate 440 at a location adjacent to and outside of the diameter 149 of the base 140. In this manner, each ring adjuster pin is configured to contact the lower edge surface of the focus ring 430B. As shown, the ring adjuster pin 445b contacts the lower edge surface of the focus ring 430B at a location adjacent to and outside of the diameter of the base 140. Other ring adjuster pins may also contact the lower edge surface of the focus ring 430B.

[0106] The adjuster flange 542 is coupled to one or more adjuster actuators for defining the elevation and / or tilt of the focus ring 430B relative to the central top surface 402 of the base 140. In one embodiment, the adjuster flange 542 is coupled to three adjuster actuators for defining the elevation and tilt of the focus ring 430B. As previously described, each of the adjuster actuators is connected to an adjuster flange 542 that is aligned with a contact point on the cylindrical portion 465 of the cannula or sheath, which is further aligned with a ring adjuster pin (e.g., via an arm or radial extension of the adjuster plate 440). In this manner, vertical movement of a corresponding contact point on the adjuster flange 542 (e.g., via interaction with a corresponding actuator) is transmitted to the corresponding adjuster pin. For example, DSC adjuster actuator B (505b) actuates a corresponding contact point on adjuster flange 542 to impart vertical motion, which is also transmitted to a corresponding arm or radial extension of adjuster plate 440 (e.g., via cylindrical portion 465 or sheath and flare 460), and which is transmitted to a corresponding ring adjuster pin 445b. In this manner, by tuning the position (e.g., elevation and tilt) of focus ring 430B relative to central top surface 402 of pedestal 140, it is possible to achieve recipe-controlled tuning of the relative capacitance between the RF flow paths at one or more points along the outer edge of the wafer to optimize the edge deposition profile of a wafer disposed on central top surface 402.

[0107] Figure 7B According to one embodiment of the present disclosure, Figure 7A An isometric view of a pedestal assembly is shown that incorporates dynamic sheath control to lift a radial portion of focus ring 430B to adjust the relative capacitance of the RF flow path through the wafer or focus ring.

[0108] In particular, focus ring 430B has a radially uniform outer diameter that extends beyond diameter 149 of base 140. In this manner, the periphery of focus ring 430B can contact ring adjuster pins 445a, 445b, and 445c. Ring supports 412a, 412b, and 412c are also shown engaging focus ring 430B to prevent lateral movement of the ring.

[0109] Figures 8A-8B A cross-sectional view of the interface between the central shaft 410 of the pedestal 140 and a sleeve 469 configured for dynamic sheath control to lift a radial portion of an edge (e.g., load or focus) ring to adjust the relative capacitance of an RF flow path through a wafer or edge ring (e.g., load ring, focus ring, etc.) is shown in accordance with one embodiment of the present disclosure. The sleeve comprises a flared tube 460 and a sheath or cylindrical portion 465 surrounding the central shaft 510. The ring adjuster subassembly provides independent movement of the sleeve 469 relative to the central shaft 510, which translates into movement of the edge ring (e.g., raising and tilting relative to the central top surface of the pedestal). In particular, portions of the ring adjuster subassembly are shown. Figures 8A-8B The subassembly includes a lower flange 541 disposed around the lower section of the central shaft 510 and further configured to maintain a vacuum within the central shaft of the base 140. For example, the lower flange 541 is connected to and / or interfaces with the bucket 525 and forms an accessible seal around the lower section of the central shaft. Movement of the central shaft is provided by actuation of the bucket 525, which is connected to the lower flange 541. A lower bellows 530 is connected to the lower flange 541. An adjuster flange 542 is connected to the lower bellows 530 and further disposed around the middle section of the central shaft 510. The sleeve includes a sheath or cylindrical portion 465 connected to the adjuster flange 542 at one end and extending from the adjuster flange 542 to an adjuster plate (not shown) at the other end, which is disposed below the base. An upper bellows 535 is connected to the adjuster flange 542 at one end and to the upper flange 543 at the opposite end.

[0110] Figures 8A-8B The flange and bellows arrangement maintains the vacuum within the central shaft 510 while also providing actuation of the intermediate flange 542 and the sheath or cylindrical portion 465 outside of the vacuum. More specifically, Figure 8BAccording to one embodiment of the present disclosure, relative movement of the central axis 510 of the base 140 and the sheath or cylindrical portion 465 of the cannula is shown. The central axis 510 and the sheath or cannula 465 are configured for dynamic sheath control to lift a radial portion of an edge (e.g., carrier or focus) ring, thereby adjusting the relative capacitance of the RF flow path through the wafer or edge ring. The independent movement of the sheath or cylindrical portion 465 relative to the central axis 510 can be described with reference to distances D811, D820, D821, and D822. In particular, D811 describes the distance between the lower flange 541 and the intermediate or adjuster flange 542. Furthermore, D820 describes the distance between the bucket 525 and the intermediate or adjuster flange 542. When the bucket and lower flange 541 are fixed relative to each other, D820 and D811 provide similar information. Additionally, D821 describes the distance between the intermediate or adjuster flange 542 and the upper flange 543. Additionally, D822 illustrates the distance between the bucket 525 and the upper flange 543 .

[0111] In particular, Figure 8B As shown, when bucket 525 moves in a vertical direction (e.g., Z1), the dimensions D811 and D820 remain constant because the corresponding components move with bucket 525. That is, the distance D811 between the intermediate or adjuster flange 542 and the lower flange 541 remains constant. Furthermore, because the lower flange 541 is fixed relative to the bucket, the relative distance D820 between the intermediate or adjuster flange 542 and bucket 525 remains constant (i.e., the lower bellows 530 does not expand or contract / compress). This is because the actuator system, including motor 810 and a ball screw assembly (including ball screw 811 and block 812), is attached to both bucket 525 and intermediate or adjuster flange 542. As Z1 changes, the relative distances D811 and D820 remain constant as long as the actuator system is not activated. In one embodiment, the distance D821 between the intermediate or adjuster flange 542 and the upper flange 543 changes as Z1 changes. Similarly, the distance D822 between the upper flange 543 and the lower flange 541 will also change. For example, when the bucket 525 moves vertically upward on Z1, the upper bellows will compress, and D821 (and D822) will decrease. Distances D811 and D820 remain unchanged. Similarly, when the bucket 525 moves vertically downward on Z1, the upper bellows will extend, and D821 (and D822) will increase.

[0112] On the other hand, when the intermediate or adjuster flange 542 is actuated, the dimensions of D811, D820, D821, and D822 may change. For example, actuation of the intermediate or adjuster flange 542 can be achieved by a motor 810 and a ball screw assembly (e.g., ball screw 811, block 812, etc.). The intermediate or adjuster flange 542 serves as an adjustable plane that deviates from the edge ring plane. Other actuation methods may be supported in other embodiments. In particular, when the ball screw rotates, the block 812 moves vertically up or down. For example, the block is fastened to a contact point or section of the intermediate or adjuster flange 542 using fastening hardware. In this way, vertical movement of the block 812 is converted into movement (e.g., vertical) of the contact point or section of the intermediate or adjuster flange 542. In this manner, the lower bellows 530 will expand or contract, causing the distances D811 and D820 to change, where D811 and D820 provide information about the relative distances between the intermediate or adjuster flange 542 and the lower flange 541. The distances D821 and D822, which provide information about the relative distances between the upper flange 543, the intermediate or adjuster flange 542, and the lower flange 541, may change or may remain constant.

[0113] Additional actuator systems may be implemented to provide vertical movement of numerous other contact points or sections of the intermediate or adjuster flange 542 as previously described. For example, a three-contact point system may be implemented on the intermediate or adjuster flange 542 to implement dynamic sheath control that provides elevation and tilting of the edge ring relative to the central top surface of the base. In particular, DSC adjuster actuator A (505a) (e.g., comprising a motor and ball screw assembly) may be connected to a first contact point or section of the intermediate or adjuster flange 542. Furthermore, DSC adjuster actuator B (505b) may be connected to a second contact point or section of the intermediate or adjuster flange 542. Additionally, DSC adjuster actuator C (505c) may be connected to a third contact point or section of the intermediate or adjuster flange 542. Each DSC adjuster actuator may be independently operable to provide independent movement of a corresponding contact point in the intermediate or adjuster flange 542. That is, a first contact point in the middle or adjuster flange 542 can be moved independently of the other contact points. In this way, one or more of the contact points can be moved to provide elevation and tilting of the sleeve 469 (e.g., the sheath, or cylindrical portion 465 and the flared tube 460), which is transmitted to the adjuster plate 440 and to one or more of the ring adjuster pins, as previously described. In yet another embodiment, instead of a three-actuator assembly, a single actuator assembly can be used with opposing bearing guides (e.g., for cost reduction, space considerations, or simplicity).

[0114] It should be understood that at least Figures 8A-8BThe dual bellows system for providing dynamic sheath control described in can be implemented using one or more bellows to impart lift and / or tilt to the edge ring (eg, through appropriate connections to sleeves, adjuster plates, adjuster pins, etc.).

[0115] In one embodiment, the actuator assembly and / or ring adjuster subassembly comprises a pressure control flexure welded into the base, and a pressure manifold machined into the base itself. The actuation distance will be a function of the flexure dimensions (e.g., inner diameter - ID, outer diameter - OD, rod OD, material thickness, material, etc.), the pressure input (relative to the chamber side (e.g., about 0 psi or about 14.7 psi, depending on whether it is at atmosphere or under vacuum)), and the temperature of the flexure (which affects its elastic modulus). Pressure will be the controlled variable.

[0116] In yet another embodiment, the actuator assembly and / or ring adjuster subassembly comprises a pressure control bellows welded into the base and a pressure manifold machined into the base itself. The actuation distance will be a function of the bellows size or spring constant (e.g., convolution ID / OD, blade thickness, material), the pressure input (relative to the chamber side (e.g., about 0 psi or 14.7 psi, depending on whether it is at atmosphere or under vacuum), and the temperature of the flexure, which affects its elastic modulus. Pressure will be the controlled variable.

[0117] Figure 9 A control module 900 for controlling the above-described system is shown. For example, the control module 900 may include a processor, a memory, and one or more interfaces. The control module 900 may be used to control the devices in the system based in part on the sensed values. By way of example only, the control module 900 may control one or more of a valve 902, a filter heater 904, a pump 906, and other devices 908 based on the sensed values ​​and other control parameters. By way of example only, the control module 900 receives the sensed values ​​from a pressure gauge 910, a flow meter 912, a temperature sensor 914, and / or other sensors 916. The control module 900 may also be used to control process conditions during the precursor delivery and deposition of the film. The control module 900 will typically include one or more storage devices and one or more processors.

[0118] The control module 900 can control the activities of the precursor delivery system and the deposition device. The control module 900 executes a computer program that includes grouped instructions for controlling process timing, delivery system temperature, and pressure differential across filters, valve positions, gas mixing, chamber pressure, chamber temperature, substrate temperature, RF power level, substrate chuck or pedestal position, and other parameters of a specific process. The control module 900 can also monitor the pressure differential and automatically switch the gaseous precursor delivery from one or more paths to one or more other paths. In some embodiments, other computer programs stored in a memory device associated with the control module 900 can be used.

[0119] Typically, there will be a user interface associated with the control module 900. The user interface may include a display 918 (e.g., a display screen and / or graphical software display of apparatus and / or process conditions), and a user input device 920, such as a pointing device, keyboard, touch screen, microphone, etc.

[0120] The computer program for controlling the delivery, deposition and other processing of the precursors in the process sequence can be written in, for example, any conventional computer-readable programming language: assembly language, C, C++, Pascal, Fortran or others. The compiled object code or script is executed by the processor to perform the tasks identified in the program.

[0121] Control module parameters relate to process conditions such as, for example, filter pressure differential, process gas composition and flow rate, temperature, pressure, plasma conditions (such as RF power level and low frequency RF frequency), cooling gas pressure, and chamber wall temperature.

[0122] The system software can be designed or configured in many different ways. For example, various chamber component subroutines or control objects can be written to control the operation of the chamber components necessary to perform the deposition process of the present invention. Examples of programs or program segments used for this purpose include substrate positioning code, process gas control code, pressure control code, heater control code, and plasma control code.

[0123] The substrate positioning program may include program code for controlling chamber components that are used to load the substrate onto a pedestal or chuck and control the spacing between the substrate and other components of the chamber (e.g., a gas inlet and / or a target). The process gas control program may include code for controlling gas composition and flow rate and, optionally, for flowing gas into the chamber to stabilize the pressure in the chamber prior to deposition. The filter monitoring program may include code for comparing one or more measured differences with one or more predetermined values ​​and / or code for switching paths. The pressure control program may include code for controlling the pressure in the chamber by adjusting, for example, a throttle valve in the exhaust system of the chamber. The heater control program may include code for controlling the current to a heating unit that is used to heat components within the precursor delivery system, the substrate, and / or other parts of the system. Alternatively, the heater control program may control the delivery of a heat transfer gas (e.g., helium) to the substrate chuck.

[0124] Examples of sensors that may be monitored during deposition include, but are not limited to, mass flow control modules, pressure sensors such as pressure gauge 910, thermocouples located within the delivery system, pedestal, or chuck, and Figure 9 Other sensors in 916. Appropriately programmed feedback and control algorithms can be used with data from these sensors to maintain desired process conditions. The foregoing describes implementation of embodiments of the present invention in single-chamber or multi-chamber semiconductor processing tools.

[0125] In some implementations, the controller is part of a system, which can be part of the examples above. Such a system can include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (substrate pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller" that can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, substrate transfer in and out tools and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0126] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuits can include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing a particular process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer that is designed to complete one or more process steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0127] In some implementations, the controller can be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can be in the "cloud" or all or part of a wafer fab host system that can allow remote access to substrate processing. The computer can enable remote access to the system to monitor the current progress of manufacturing operations, check the history of past manufacturing operations, check trends or performance standards for multiple manufacturing operations, change parameters of the current processing, set processing steps to follow the current processing, or start a new processing. In some examples, a remote computer (e.g., a server) can provide a processing recipe to the system over a network (which can include a local network or the Internet). The remote computer can include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system.

[0128] In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It will be understood that the parameters can be specific to the type of processing to be performed and the type of tool with which the controller is configured to interface or control the tool. Thus, as described above, the controller can be distributed, for example, by including one or more discrete controllers that are networked together and work toward a common purpose (e.g., the processing and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the processing on the chamber.

[0129] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0130] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in the material transport of wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

[0131] The foregoing description of the embodiments is provided for illustration and description purposes. It is not intended to fully describe or limit the present invention. The individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but are interchangeable and can be used in selected embodiments, where applicable, even if not specifically shown or described. This can also be varied in various ways. Such variations are not considered to depart from the present invention, and all such modifications are also included within the scope of the present invention.

[0132] Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. The present embodiments are, therefore, to be considered as illustrative and not restrictive, and the embodiments are not to be limited to the details provided herein, but may be modified within the scope and equivalents of the claims.

Claims

1. A base assembly comprising: a susceptor for supporting a substrate, the susceptor being supported by a central shaft that positions the susceptor at a certain height during operation; a ring configured to be positioned along a periphery of the base; and A ring adjuster subassembly comprising: Regulator plate; an adjuster flange disposed about a middle section of the central shaft; a sleeve connected to the adjuster flange and extending from the adjuster flange to the adjuster plate disposed below the base and surrounding the central axis; a plurality of ring adjuster pins connected to the adjuster plate at corresponding locations adjacent a diameter of the base, the plurality of ring adjuster pins being oriented vertically upward from the adjuster plate and located outside the diameter of the base, wherein the plurality of ring adjuster pins are configured to contact a rim lower surface of the ring; wherein the adjuster flange is coupled to at least three adjuster actuators controlled by one or more controllers, the controllers being configured to raise or lower corresponding portions of the adjuster flange, and the adjuster flange, the at least three adjuster actuators and the one or more controllers are arranged in combination to tilt the adjuster plate and correspondingly define the raising or tilting of the ring relative to the top surface of the base to control the capacitance between the inner edge of the ring and the base.

2. The base assembly of claim 1 , wherein the sleeve comprises: a cylindrical portion connected to the adjuster flange; and A flared tube is connected to the cylindrical portion and to the adjuster plate.

3. The base assembly of claim 2, wherein the cylindrical portion is adjacent to the central axis.

4. The base assembly of claim 1 , wherein the base comprises: the top surface extending from the central axis of the base to a top surface diameter; and an annular surface extending from the top surface diameter to the outer diameter of the annular surface, the annular surface being located at a step down from the top surface, wherein the central shaft extends from the central axis to a shaft diameter, the central shaft being configured for transmission of vertical motion to the base, The ring is positioned adjacent the annular surface and extends beyond the diameter of the base at least at a plurality of radial extensions of the ring.

5. The susceptor assembly of claim 1, wherein the ring comprises a carrier ring including a plurality of tongues extending to a maximum outer diameter of the carrier ring, each of the plurality of tongues being aligned with a corresponding ring adjuster pin.

6. The susceptor assembly of claim 1, wherein the ring comprises a focus ring having a uniform outer diameter.

7. The base assembly of claim 1, wherein the at least three adjuster actuators are connected to the adjuster flange aligned with contact points that are radially equally spaced from one another about a horizontal plane.

8. The base assembly according to claim 7, wherein the adjuster plate comprises a plurality of arms corresponding to the contact points, wherein the plurality of ring adjuster pins are connected to ends of the plurality of arms.

9. The base assembly of claim 7, wherein vertical movement of corresponding contact points on the adjuster flange is transmitted to corresponding adjuster pins through the sleeve and the adjuster plate.

10. The base assembly of claim 1 , further comprising: A plurality of hard stops are located on the adjuster plate and are configured to limit upward vertical movement of the adjuster plate relative to the base.

11. A base assembly comprising: a susceptor for supporting a substrate, the susceptor being supported by a central shaft that positions the susceptor at a certain height during operation; a ring configured to be positioned along a periphery of the base; and A ring adjuster subassembly comprising: a lower flange disposed about a lower section of the central shaft and configured to maintain a vacuum within the central shaft; a lower bellows connected to the lower flange; Regulator plate; an adjuster flange connected to the lower bellows and disposed about a middle section of the central shaft; a sleeve connected to the adjuster flange and extending from the adjuster flange to the adjuster plate disposed below the base and surrounding the central axis; an upper bellows connected to the adjuster flange; an upper flange connected to the upper bellows; a plurality of ring adjuster pins connected to the adjuster plate at corresponding locations adjacent a diameter of the base, the plurality of ring adjuster pins being oriented vertically upward from the adjuster plate and located outside the diameter of the base, wherein the plurality of ring adjuster pins are configured to contact a rim lower surface of the ring; wherein the adjuster flange is coupled to at least three adjuster actuators controlled by one or more controllers, the controllers being configured to raise or lower corresponding portions of the adjuster flange, and the adjuster flange, the at least three adjuster actuators and the one or more controllers are arranged in combination to tilt the adjuster plate and correspondingly define the raising or tilting of the ring relative to the top surface of the base to control the capacitance between the inner edge of the ring and the base.

12. The base assembly of claim 11, wherein the sleeve comprises: a cylindrical portion connected to the adjuster flange; and A flared tube is connected to the cylindrical portion and to the adjuster plate.

13. The susceptor assembly of claim 11 , wherein the susceptor comprises: the top surface extending from the central axis of the base to a top surface diameter; and an annular surface extending from the top surface diameter to the outer diameter of the annular surface, the annular surface being located at a step down from the top surface, wherein the central shaft extends from the central axis to a shaft diameter, the central shaft being configured for transmission of vertical motion to the base, The ring is positioned adjacent the annular surface and extends beyond the diameter of the base at least at a plurality of radial extensions of the ring.

14. The susceptor assembly of claim 11, wherein the ring comprises a carrier ring including a plurality of tabs extending to an outer diameter of the ring, each of the plurality of tabs being aligned with a corresponding ring adjuster pin.

15. The susceptor assembly of claim 11, wherein the ring comprises a focus ring having a uniform outer diameter.

16. The base assembly of claim 11, wherein the at least three adjuster actuators are connected to the adjuster flange aligned with contact points of the adjuster flange, the contact points being radially equidistantly spaced from one another about a horizontal plane.

17. A base assembly comprising: a susceptor for supporting a substrate, the susceptor being supported by a central shaft that positions the susceptor at a certain height during operation; a ring configured to be positioned along a periphery of the base and to extend beyond an outer diameter of the base at a plurality of arms; and A ring adjuster subassembly comprising: Regulator plate; an adjuster flange disposed about a middle section of the central shaft; a sleeve connected to the adjuster flange and extending from the adjuster flange to the adjuster plate disposed below the base and surrounding the central axis, the sleeve being configured to move vertically relative to the central axis at a plurality of contact points aligned with the plurality of arms; as well as a plurality of ring adjuster pins connected to the adjuster plate at corresponding locations on corresponding arms of the adjuster plate adjacent the outer diameter of the base, the plurality of ring adjuster pins being oriented vertically upward from the adjuster plate and located outside the outer diameter of the base, wherein the plurality of ring adjuster pins are configured to contact a rim lower surface of the ring; wherein the adjuster flange is coupled to at least three adjuster actuators aligned with the plurality of contact points, the at least three adjuster actuators being controlled by one or more controllers configured to raise or lower corresponding portions of the adjuster flange, and the adjuster flange, the at least three adjuster actuators and the one or more controllers are arranged in combination to tilt the adjuster plate and correspondingly define a raise or tilt of the ring relative to a top surface of the base to control the capacitance between an inner edge of the ring and the base.

18. The base assembly of claim 17, wherein the sleeve comprises: a cylindrical portion connected to the adjuster flange; and A flared tube is connected to the cylindrical portion and to the adjuster plate.

19. The susceptor assembly of claim 17, wherein the susceptor comprises: the top surface extending from the central axis of the base to a top surface diameter; and an annular surface extending from the top surface diameter to the outer diameter of the annular surface, the annular surface being located at a step down from the top surface, wherein the central shaft extends from the central axis to a shaft diameter, the central shaft being configured for transmission of vertical motion to the base, wherein the ring is positioned adjacent the annular surface and extends beyond the outer diameter of the base at least at a plurality of radial extensions of the ring.

20. The susceptor assembly of claim 17, wherein the ring comprises a load ring or a focus ring.

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