Encapsulation and its manufacturing method

Abstract

The package includes a die having a first side and a second side opposite to each other. The package further includes a sealing material surrounding the die. The package further includes a redistribution layer (RDL) structure disposed on the first side of the die and above the sealing material. The package further includes a heat dissipation component disposed on the second side of the die and above the sealing material. Additionally, the package further includes a first screw assembly penetrating the die, the RDL structure, and the heat dissipation component. Embodiments of the present application also relate to a method of manufacturing a package.

Description

Technical Field

[0001] Embodiments of the present application relate to a package and a method of manufacturing the same. Background Art

[0002] Due to the continuous increase in the integration density of various electronic components (e.g., transistors, diodes, resistors, capacitors, etc.), the semiconductor industry has experienced rapid growth. In most cases, this increase in integration density stems from the continuous reduction of the minimum component size, enabling more components to be integrated into a specific area. Recently, with the growing demand for miniaturization, higher speed and greater bandwidth, as well as lower power consumption and latency, the demand for smaller and more innovative packaging technologies for semiconductor dies has also increased.

[0003] With the further development of semiconductor technology, wafer-level integration and packaging have emerged as an effective alternative to further reduce the physical size of semiconductor devices. Multiple functional dies of a certain type (e.g., active circuits such as logic circuits, memory circuits, or processor circuits, etc.) can be formed on a substrate. In wafer-level packaging such as a reconstituted wafer, different types of functional dies are separated from their respective substrates, placed together on a carrier substrate, and packaged together as a single functional device. Such wafer-level integration and packaging processes employ complex processes and need to be improved. The high integration of advanced packaging technologies enables the production of semiconductor devices with enhanced functionality and small footprint, which is beneficial for small form factor devices such as mobile phones, tablet computers, and digital music players. Another advantage is the reduction in the length of the conductive paths connecting the interoperable parts within the semiconductor device. This improves the electrical performance of the semiconductor device as shorter wiring between circuits results in faster signal propagation and reduced noise and crosstalk. Summary of the Invention

[0004] Some embodiments of the present application provide a package, including: a first die having a first side and a second side opposite to each other; a sealing material surrounding the first die; a redistribution layer (RDL) structure disposed on the first side of the first die and above the sealing material; a heat dissipation component disposed on the second side of the first die and above the sealing material; and a first screw assembly penetrating the first die, the RDL structure, and the heat dissipation component.

[0005] Some other embodiments of the present application provide a package, including: a first functional die and a second functional die, surrounded by a sealing material, wherein the size of the first functional die is larger than that of the second functional die; a redistribution layer (RDL) structure disposed above a first side of the first functional die, a first side of the second functional die, and a first side of the sealing material; a heat dissipation component disposed above a second side of the first functional die, a second side of the second functional die, and a second side of the sealing material; and a first screw assembly penetrating the first die, the redistribution layer structure, and the heat dissipation component.

[0006] Some other embodiments of the present application provide a method for manufacturing a package, including: disposing a first die above a carrier, wherein the first die has a first side and a second side opposite to the first side; forming a sealing material around the first die; grinding the first die and the sealing material from the second side of the first die; forming a redistribution layer (RDL) structure above the second side of the first die and above the sealing material; removing the carrier; and disposing a heat dissipation component above the first side of the first die, and disposing a screw assembly to penetrate the first die, the redistribution layer structure, and the heat dissipation component. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] As will be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various components may be arbitrarily increased or decreased.

[0008] Figures 1A to 1H is a schematic cross-sectional view showing the various stages in a method for manufacturing a package according to some exemplary embodiments of the present invention.

[0009] Figures 2 to 6 is a schematic cross-sectional view showing various packages according to some exemplary embodiments of the present invention.

[0010] Figures 7A to 7E is a schematic plan view showing various packages according to some exemplary embodiments of the present invention.

[0011] Figure 8 is a schematic cross-sectional view of another package according to an exemplary embodiment of the present invention.

[0012] Figure 9 is a schematic cross-sectional view of another package according to an exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0013] The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present invention. Of course, these are merely examples and are not intended to limit the present invention. For example, in the following description, forming a first component above or on a second component may include embodiments in which the first and second components are in direct contact, and may also include embodiments in which additional components may be formed between the first and second components such that the first and second components may not be in direct contact.

[0014] Moreover, for ease of description, spatial relative terms such as "under", "below", "lower", "above", "upper", etc. may be used herein to describe the relationship of one element or component to another (or other) element or component as shown in the figures. In addition to the orientation shown in the figures, the spatial relative terms are intended to include different orientations of the device in use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein may be interpreted accordingly.

[0015] Figures 1A to 1G is a cross-sectional view showing the manufacturing steps of the package 100 shown in Figure 1H according to some embodiments. First, referring to Figure 1A , a carrier 101 is provided to fabricate the Figure 1A semiconductor package. As an example, the carrier 101 may include glass, silicon oxide, alumina, or a semiconductor wafer. The carrier 101 may also include other materials. In an example, the carrier 101 is a glass panel or a glass wafer. As an example, the carrier 101 may be circular, square, or rectangular in a top view. Optionally, the carrier 101 may include other shapes, such as a square or rectangle with rounded corners. In some embodiments, the length or diameter of the carrier 101 is greater than about 250 mm. In other embodiments, the length or diameter of the carrier is greater than about 500 mm.

[0016] The carrier 101 has a release layer 102 optionally formed above the carrier substrate 101, which can make it easier to remove the carrier substrate 101. As explained in more detail below, various layers and devices will be placed above the carrier 101, and then the carrier 101 can be removed. The release layer 102 helps to remove the carrier 101 and reduces damage to the structures formed above the carrier 101. The release layer 102 can be formed of a polymer-based material. In some embodiments, the release layer 102 is a heat-release material based on epoxy resin, which loses its adhesive properties when heated, such as a light-to-thermal conversion (LTHC) release coating. In other embodiments, the release layer 102 can be an ultraviolet (UV) glue that loses its adhesiveness when exposed to UV. The release layer 102 can be dispensed as a liquid and can be cured. In other embodiments, the release layer 102 can be a laminated film laminated onto the carrier 101. Other release layers can be utilized.

[0017] In some embodiments, an insulating material 104 is disposed above the release layer 102. Optionally, when the release layer 102 is not formed, the insulating material 104 is disposed above the carrier 101. The insulating material 104 includes a passivation layer for the package. For example, in some embodiments, the insulating material 104 includes a glue / polymer-based buffer layer. As an example, in some embodiments, the insulating material 104 includes a solder resist (SR), polyimide (PI), polybenzoxazole (PBO), benzocyclobutene (BCB), or a multi-layer or combination thereof. For example, the insulating material 104 has a thickness ranging from about 1 μm to about 20 μm. Optionally, the insulating material 104 can include other materials and dimensions. For example, the insulating material 104 is formed using spin coating, lamination, chemical vapor deposition (CVD), or other methods.

[0018] Figure 1B The attachment of the first functional die 110 to the insulating material 104 is shown. Moreover, according to some embodiments, the second functional die 120 and / or the dummy die 130 are optionally attached to the insulating material 104. The first functional die 110, the second functional die 120, and the dummy die 130 can be adhered to the insulating material 104 through an adhesive layer 108 (such as a die attach film (DAF)). The thickness range of the adhesive layer 108 can be between about 10 μm and about 30 μm. The first functional die 110, the second functional die 120, and the dummy die 130 can be coupled to the insulating material 104 manually or using an automated machine (such as a pick-and-place machine).

[0019] As Figure 1B shown, the first functional die 110 can be a single die, or in some embodiments, two or more dies can be attached. For example, as Figure 1BAs shown, the second functional die 120 and the dummy die 130 may include multiple dies, or in some embodiments, the second functional die 120 and the dummy die 130 may be a single die for any suitable method. The first functional die 110 is an extremely large die, which, according to some embodiments, has dimensions (i.e., length × width) of about 900 mm 2 to 90,000 mm 2 . Optionally, the first functional die has dimensions of about 40,000 mm 2 to about 80,000 mm 2 . In an embodiment, the first functional die 110 has dimensions of about 50,000 mm 2 . For example, the length of the first functional die 110 may be from about 200 mm to about 320 mm, and the width may be from about 200 mm to about 320 mm. For example, the length of the first functional die 110 may be greater than the length of a photolithography mask (e.g., 32 mm). Optionally, the width of the first functional die may be at least greater than the width of a photolithography mask (e.g., 26 mm). In some embodiments, the dimensions (i.e., length × width) of the first functional die 110 are at least 25 times the dimensions of the second functional die 120, which is a normal functional die. In some embodiments, the dimensions (i.e., length × width) of the first functional die 110 are at least 50 or 100 times the dimensions of the second functional die 120. For example, as Figure 7A shown, the first functional die 110 may be circular, square, or rectangular in a top view. In other embodiments, for example, as Figure 7B shown, the first functional die 110 may be a square or rectangular shape with rounded corners in a top view. The rounded corners may help reduce warping caused by the extremely large size of the first functional die 110. In some embodiments, the first functional die 110 is thicker than the second functional die 120 (not shown in the figure). For example, the thickness of the first functional die 110 may be from about 500 mm to about 750 mm, and the thickness of the second functional die 120 may be from about 500 mm to about 750 mm. In another example, the thickness of the first or second functional die or both may be about 300 mm or more.

[0020] Although the first functional die 110 and the second functional die 120 may provide the same functionality, they may also provide significantly different functionality. Examples of functional dies 110 and 120 include, but are not limited to: active devices such as digital cores (e.g., digital signal processing (DSP) cores), central processing units (CPUs), graphics processing units (GPUs), field programmable gate arrays (FPGAs), artificial intelligence (AI), application specific integrated circuit (ASIC) accelerators, input / output (I / O) dies, static random access memories (SRAMs); and passive devices such as integrated passive devices (IPDs) (e.g., inductors (L), capacitors (C), resistors, transformers, etc.), low dropout (LDO) components, integrated voltage regulators (IVRs) components, etc.; or combinations thereof; or the like. Although only the first functional die 110 and the second functional die 120 are shown for clarity, those skilled in the art will recognize that more functional dies may be integrated into the package in various arrangements and configurations. In some embodiments, the dummy die 130 is made of a bare die and is electrically isolated from the functional dies 110 and 120.

[0021] For example, the first functional die 110 may perform a first function (e.g., AI) that requires higher computing functionality, and the second functional die 120 may perform a second function (e.g., I / O or memory die). According to some embodiments, the second functional die 120 is arranged in rows and columns near the periphery of the first functional die 110. As Figure 7A and Figure 7B shown, the dummy die 130 may be arranged in rows and columns near the periphery of the rows and columns of the second functional die 120 and is separated from the first functional die 110 by the second functional die 120. In other embodiments, the virtual die 130 is arranged in rows and columns near the periphery of the first functional die and separates the second functional die 120 from the first functional die 110.

[0022] Referring again to Figure 1B , the first functional die 110 includes a first side 110a and a second side 110b, and the second side 110b is opposite to the first side 110a. The first side 110 of the first functional die 110 is coupled to the insulating material 104. The second functional die 120 includes a first side 120a and a second side 120b that are opposite to each other. The second side of the second functional die 120 is coupled to the insulating material 104. No contact pads are formed on the first sides 110a and 120a, and they are also referred to as the back or non-active side of the functional die. The second sides 110b and 120b are also referred to as the front or active side of the functional die.

[0023] Each of the functional dies 110 and 120 includes a substrate. The substrate includes various active and passive devices formed in its active region. The active and passive devices (such as transistors, capacitors, resistors, inductors, etc.) can be used to generate the desired structural and functional design requirements for each of the functional dies. The substrate also includes other non-functional components, such as test lines, or scribe lines formed in its peripheral region.

[0024] The first functional die 110 and the second functional die 120 each include a plurality of contact components 114 and 124 formed across their second sides 110b and 120b. The contact components 114 and 124 are electrically coupled to the substrate inside the functional die. As an example, the contact components 114 and 124 include a conductive material, such as copper, aluminum, other metals, or their alloys or multilayers. Optionally, the contact components 114 and 124 can include other materials. The contact components 114 and 124 can have a column shape and are respectively sealed by insulating layers 116 and 126. As an example, in some embodiments, the insulating layers 116 and 126 can include polyimide (PI), polybenzoxazole (PBO), benzocyclobutene (BCB), or their multilayers or combinations.

[0025] Then, a sealing material 140 is formed over the insulating material 104 to seal the first functional die 110, the second functional die 120, and the dummy die 130, as Figure 1C shown. For example, in some embodiments, a wafer-level or panel-level sealing process is used to apply the sealing material 140. The sealing material 140 can include a molding material. As an example, the sealing material 140 can include an epoxy resin, an organic polymer, a polymer with or without silica-based or glass fillers, or other materials. Compression molding, transfer molding, or other methods can be used to mold the sealing material. In some embodiments, the sealing material 140 includes a liquid sealing compound (LMC), which is a gel-type liquid when applied. The sealing material 140 can also include a liquid or a solid when applied. Optionally, the sealing material 140 can include other insulating and / or sealing materials. After the sealing material 140 is formed, the size of the package 100 can be about 1.1 times to about 4 times the size of the first functional die 110.

[0026] Next, in some embodiments, the sealing material 140 is cured using a curing process. The curing process can include heating the sealing material 140 to a predetermined temperature for a predetermined period using an annealing process or other heating processes. The curing process can also include an ultraviolet (UV) exposure process, an infrared (IR) energy exposure process, their combination, or their combination with a heating process. Optionally, other methods can be used to cure the sealing material 140. In some embodiments, the curing process is not included.

[0027] Then, the top portion of the encapsulant 140 is removed, as Figure 1D shown. For example, in some embodiments, a grinding process is used to remove the top portion of the encapsulant 140. In some embodiments, for example, a chemical mechanical polishing (CMP) process is used to remove the top portion of the encapsulant 140. A combination of a grinding process and a CMP process may be used. For example, in some embodiments, the CMP process or the grinding process may be adapted to stop when the contact components 114 and 124 arrive. For example, the CMP process and / or the grinding process may be adapted to stop after removing the solder portions (not shown) of the contact components 114 and 124.

[0028] In some embodiments, after the grinding and / or CMP process, the top surface of the encapsulant 140 is substantially coplanar with the second sides 110b and 120b of the functional dies 110 and 120. The top surface of the encapsulant 140 being substantially coplanar with the second sides 110b and 120b of the functional dies 110 and 120 advantageously facilitates the formation of the subsequently formed redistribution layer (RDL) structure 150, as Figure 1E shown.

[0029] In some embodiments, as Figure 1E shown, the RDL structure 150 is formed over the first functional die 110, the second functional die 120, the dummy die 130, and the encapsulant 140. The RDL structure 150 may include one or more dielectric layers 152, and a plurality of conductive structures 154 (e.g., lines and / or vias) formed within the one or more dielectric layers 152. The formation of the RDL structure 150 may include patterning (e.g., using subtractive and / or damascene techniques) the dielectric layers 152, and forming the conductive structures 154 in the dielectric layers 152 (e.g., using one or more sputtering processes, lithography processes, plating processes, and photoresist stripping processes).

[0030] The one or more dielectric layers 152 may be formed from any suitable material (such as polyimide (PI), polybenzoxazole (PBO), benzocyclobutene (BCB), epoxy resin, silicone resin, acrylate, nano-filled phenolic resin, silicone, fluorinated polymer, polynorbornene, etc.) using any suitable method (such as spin coating techniques, etc.). The conductive structures 154 may be formed of copper or a copper alloy, but other metals (such as aluminum, gold, etc.) may also be used. The conductive structures 154 may be physically and electrically connected to the contact components 114 and 124 in the dies 110 and 120.

[0031] In some embodiments, contact pads 156 are formed above the top surface of the RDL structure 150. In some embodiments, the contact pads 156 may include an under-bump metallization (UBM) structure. The UBM can provide better adhesion and stress buffering for the connectors attached in subsequent processes. The UBM may include materials formed of copper, titanium, tungsten, aluminum, etc.

[0032] Then, the connectors 160 and / or die 170 may be disposed above the contact pads 156, as Figure 1E shown. The connectors 160 may be ball grid array (BGA) connectors, lead-free solder balls, controlled collapse connection (C4) bumps, bumps formed by electroless nickel electroless palladium immersion gold (ENEPIG), etc. The connectors 160 may include conductive materials such as solder, gold, nickel, silver, palladium, tin, etc., or combinations thereof. As an example, the connectors 160 may be electrically connected to another device, a semiconductor device of another package, or other devices in a circuit board or final application. The die 170 may be coupled to the contact pads 156 through a plurality of connectors 172. The die 170 may be a functional die, for example, an integrated circuit die or a passive device die. The connectors 172 may include solder bumps coupled to the bottom side or both sides of the die 170. In some embodiments, a module (not shown in the figure) such as a power module may also be disposed above the contact pads 156 and coupled to the contact pads.

[0033] Once the connectors 160 and die 170 have been installed, the device 100 can be flipped and placed on, for example, another carrier (not shown) (e.g., a tape) to prepare for further processing. According to some embodiments, the carrier 101 is then removed, as Figure 1F shown. For example, the carrier 101, release layer 102, and insulating material 104 can be removed by exposing the release layer 102 to heat or UV.

[0034] According to some embodiments, an interface material 180 and a heat dissipation component 182 are disposed above the sides 110a and 120a of the dies 110 and 120, as Figure 1GAs shown. For example, the interface material 180 and the heat dissipation component 182 are disposed above the die 110 / 120 and the encapsulant 140. The interface material 180 may include a thermal interface material (TIM), such as a polymer with good thermal conductivity, and its thermal conductivity may be between about 3 watts per meter kelvin (W / m·K) and about 5 W / m·K or higher. The TIM may have good thermal conductivity and may be disposed between the die 110 and 120 and the heat dissipation component 182. In addition, the interface material 180 may further include an adhesive (e.g., epoxy resin, silicone resin, etc.) for attaching the heat dissipation component 182 to the die 110 / 120 and the encapsulant 140. The heat dissipation component 182 may also have a high thermal conductivity, for example, between about 200 W / m·K and about 400 W / m·K or higher, and may be formed using metals, metal alloys, graphene, carbon nanotubes (CNTs), etc.

[0035] Once the heat dissipation component 182 has been attached, the screw assembly 190 can be attached by first forming bolt holes through the heat dissipation component 182, the interface material 180, the adhesive layer 108, the first functional die 110, and the RDL structure 150, as Figure 1H shown. The bolt holes can be formed by a drilling process (such as laser drilling, mechanical drilling, etc.).

[0036] Once the bolt holes have been formed, the screw assembly 190 can be used to further fasten the heat dissipation component 180 to the package 100 and apply a desired amount of pressure to the interface material 180 to cause the interface material 180 to adhere sufficiently to the heat dissipation component 182. According to some embodiments, the screw assembly 190 includes a bolt 192, a fastener 194, and a mechanical bracket 196. The bolt 192 passes through the corresponding bolt holes in the mechanical bracket 196, the heat dissipation component 182, the interface material 180, the adhesive layer 108, the first functional die 110, and the RDL structure 150 in a threaded manner. The fastener 194 is threaded onto the bolt and tightened to clamp the interface material 180 between the heat dissipation component 182 and the encapsulant 140. The fastener 194 may be, for example, a nut threaded onto the bolt 192. The fastener 194 attaches the bolt 192 at both sides of the package (e.g., at the side with the heat dissipation component and at the side with the RDL structure).

[0037] During fastening, the fastener 194 is tightened, thereby increasing the mechanical force applied to the interface material 180 through the mechanical bracket 196 and the sealing material 140. The mechanical bracket 196 is a rigid support that can be formed of a material with high stiffness, such as a metal, for example, steel, titanium, cobalt, etc. The fastener 194 is tightened until the heat dissipation component 182 and the sealing material 140 apply a desired amount of pressure on the interface material 180. For example, the tightening of the fastener 194 can be performed with a torque in the range of about 20 N·m to about 30 N·m. However, any suitable torque can be used. In some embodiments, the diameter of the bolt 192 is about 1 mm to about 10 mm. In other embodiments, the diameter of the bolt 192 is about 2 mm to about 5 mm.

[0038] According to some embodiments, due to the integration of an oversize die (e.g., the first functional die 110), the size of the package is increased (e.g., exceeding 25,000 mm 2 ). Therefore, the position of the screw assembly becomes a factor that may affect the adhesion performance of the interface material 180 to the heat dissipation component 182. For example, according to some embodiments, the screw assembly 190 can threadedly pass through a portion of the first functional die 110 to apply a desired amount of pressure on a portion of the interface material 180 above the first functional die 110, as Figure 1H shown. In some embodiments, due to the oversize of the first functional die 110, the first functional die 110 can have a sufficient peripheral area, which can allow the screw assembly 190 to threadedly pass through without sacrificing the area of the active region or damaging the active and passive devices in the active region inside the first functional die 110.

[0039] In some embodiments, in addition to the screw assembly 190, the screw assembly 290 also threadedly passes through the sealing material 140 to apply a desired amount of pressure on each portion of the interface material 180, as Figure 2 shown. In other embodiments, the screw assembly can also threadedly pass through a dummy die 130 (not shown). However, according to some embodiments, due to the size of the second functional die 120, the screw assembly 290 does not threadedly pass through the second functional die 120. Since the distance between the screw assembly and the die center is not far, the screw assembly 290 that threadedly passes through the sealing material 140 and is close to a normally sized functional die may generate sufficient torque on a portion of the interface material 180 above the center of the normally sized functional die (e.g., the second functional die 120). Additionally, the peripheral area in a normally sized functional die (e.g., the second functional die 120) may not have enough space to allow one or more screw assemblies to threadedly pass through without sacrificing the active region.

[0040] Figure 3 shows attaching the Figure 1H package 100 shown in to a system substrate. For example, package 100 can be attached to substrate 305 through connector 160 to form package 300. Substrate 305 can be a printed circuit board (PCB) or an organic substrate, which is designed to provide system functions and interfaces for other module integrations. Other devices (e.g., passive devices), modules (e.g., power module integrated circuit (PMIC) or other functional modules), or packages can be mounted on one side or both sides of substrate 305 to provide system functions. For example, as Figure 3 shown, module 310 is mounted on both sides of substrate 305.

[0041] Figure 4 shows attaching the package 100 at a stage in accordance with another embodiment of the present invention to a system substrate. For example, as Figure 1G shown, package 100 can be attached to substrate 405 through connector 160 to form package 400. Substrate 405 can be a PCB or an organic substrate, which is designed to provide system functions and interfaces for other module integrations. Other devices (e.g., passive devices), modules (e.g., power module integrated circuit (PMIC) or other functional modules), or packages can be mounted on one side or both sides of substrate 405 to provide system functions. For example, as Figure 1H shown, module 310 is mounted on both sides of substrate 405. Figure 4 shown, module 310 is mounted on both sides of substrate 405.

[0042] In some embodiments, at Figure 1GAfter the package 100 at the stage shown is attached to the substrate 405 to form the package 400, the screw assembly 490 is installed. For example, first, bolt holes are formed through the heat dissipation component 182, the interface material 180, the adhesive layer 108, the first functional die 110, the RDL structure 150, and the system substrate 405. Once the bolt holes have been formed, the screw assembly 490 includes a bolt 492, a fastener 494, and a mechanical bracket 496. The bolt 492 is threadedly passed through the corresponding bolt holes in the mechanical bracket 496, the heat dissipation component 182, the interface material 180, the adhesive layer 108, the first functional die 110, the RDL structure 150, and the system substrate 405. The fastener 494 is tightened to clamp the interface material 180 between the heat dissipation component 182 and the sealing material 140. The fastener 494 attaches the bolt 492 at both sides of the package (e.g., at the side with the heat dissipation component 182 and at the side with the substrate 405). Since the substrate 405 can be a PCB or other plate more rigid than the RDL structure 150, the fastener 494 can apply a greater pressure on the substrate 405 than on the RDL structure 150, and thus can apply a greater pressure on the interface material 180. Although Figure 4 only the screw assembly 490 is shown passing through the first functional die 110 in a threaded manner, those skilled in the art will know that within the scope of the present invention, other arrangements of the functional die and the screw assembly can be implemented and are not limited to the embodiments of the present invention.

[0043] Figure 5 and Figure 6 Packages 500 and 600 according to some embodiments of the present invention are shown. For example, since the first functional die 110 has an oversized size, a certain amount of warping is generated, and this causes the first functional die 110 to warp. For example, Figure 5 it is shown that the first functional die 110 has corners that warp upward (e.g., toward the lateral RDL structure 150). The adhesive layer 508 under the first functional die 110 has a central portion 508a and an edge portion 508b. The thickness of the edge portion 508b can be greater than the thickness of the central portion 508a. For example, the thickness difference between the edge portion 508b and the central portion 508a is about 5 um to about 30 um. Thus, the first functional die 110 is properly attached to the insulating material 104 through the adhesive layer 508.

[0044] The first functional die 110 can have a contact component 514a located at the central portion of the first functional die 110 and a contact component 514b located at the edge portion of the first functional die 110. Although the contact components 514a and 514b can grow to the same height from the substrate surface as Figure 1B shown, but as Figure 1CAfter the grinding process shown, the height of the contact member 514b can be shorter than the height of the contact member 514d. For example, the height difference between the contact member 514a and the contact member 514b is from about 5um to about 30um. In some embodiments, the second functional die 120 has less warpage than the first functional die. Compared with the first functional die 110, the second functional die 120 can have a flat upper surface and bottom surface or can have a less severely curved upper surface and bottom surface. Therefore, according to some embodiments, the thickness of the adhesive layer 508 under the second functional die 120 can be substantially uniform. In other embodiments, the adhesive layer 508 under the second functional die 120 can have a central portion 508c and an edge portion 508d. The central portion 508c of the adhesive layer 508 under the second functional die 120 is thinner than the edge portion 508d. The thickness difference between the central portion 508c and the edge portion 508d of the adhesive layer 508 under the second functional die 120 is less than the thickness difference between the central portion 508a and the edge portion 508b of the adhesive layer 508 under the first functional die 110. In some embodiments, the second functional die 120 can have a contact member 514c at its central portion and a contact member 514d at its edge portion. In some embodiments, the contact member 614c is higher than the contact member 614d, and the height difference between the contact member 514c and the contact member 514d is less than the height difference between the contact member 514a and the contact member 514b.

[0045] For example, Figure 6 It is shown that the first functional die 110 has corners that warp downward (e.g., the lateral heat dissipation member 182). The adhesive layer 608 under the first functional die 110 has a central portion 608a and an edge portion 608b. The thickness of the edge portion 608b can be less than the thickness of the central portion 608a. For example, the thickness difference between the edge portion 608b and the central portion 608a is from about 5um to about 30um. Therefore, the first functional die 110 is properly attached to the insulating material 104 through the adhesive layer 608.

[0046] The first functional die 110 can have a contact member 614a located at the central portion of the first functional die 110 and a contact member 614b located at the edge portion of the first functional die 110. Although the contact members 614a and 614b can grow to the same height from the substrate surface as Figure 1B shown, but as Figure 1CAfter the lapping process shown, the height of the contact member 614b can be shorter than the height of the contact member 614d. For example, the height difference between the contact member 614a and the contact member 614b is about 5um to about 30um. In some embodiments, the second functional die 120 has less warpage than the first functional die. Compared with the first functional die 110, the second functional die 120 can have a flat upper surface and bottom surface or can have a less severely curved upper surface and bottom surface. Thus, according to some embodiments, the thickness of the adhesive layer 608 under the second functional die 120 can be substantially uniform. In other embodiments, the adhesive layer 608 under the second functional die 120 can have a central portion 608c and an edge portion 608d. The central portion 608c of the adhesive layer 608 under the second functional die 120 is thicker than the edge portion 608d. The thickness difference between the central portion 608c and the edge portion 608d of the adhesive 608 under the second functional die 120 is less than the thickness difference between the central portion 608a and the edge portion 608b of the adhesive under the first functional die 110. In some embodiments, the second functional die 120 can have a contact member 614c at its central portion and a contact member 614d at its edge portion. In some embodiments, the contact member 614c is shorter than the contact member 614d, and the height difference between the contact member 614c and the contact member 614d is less than the height difference between the contact member 614a and the contact member 614b.

[0047] Figures 7A to 7E is a plan view of a package according to various embodiments of the present invention. It should be noted that Figures 7A to 7E the package in Figures 7A to 7E is for illustration only, and Figures 1A to 6 the embodiments in Figure 7A are within the scope of the present invention, that is, referring to Figure 7B the structure described. For example, Figure 2 and Figure 7C can be Figure 7D a plan view of the package 200 shown in Figure 1A , however, those skilled in the art will understand that the shape of the functional die and the arrangement of the dies can be applied to any other embodiments of the present invention. For example, referring to

[0048] Figure 7E and Figure 1A , the package 700 can have a square or rectangular shape, a rectangular shape or a rounded shape (by cutting corners) or a circular shape. The shape of the package can be determined by Figure 1A the shape of the carrier 101 shown in

[0048] Figure 7E , or limited by the processes or manufacturing equipment in the industry, and the shape of the package can be applied to various embodiments of the present invention regardless of the arrangement and configuration of the dies, screw assemblies or other components.

[0048] Figure 7EShows a package according to some embodiments of the present invention. Figure 8 Shows a cross-sectional view corresponding to Figure 7E the embodiment of. Figure 7E And Figure 8 The package in may have a plurality of first functional dies disposed at a central portion of the package. In this embodiment, each of the first functional dies 110 provides the same or different functions as the other first functional dies 110. The screw assembly 190 may pass through the first functional die 110 in a threaded connection. According to some embodiments, the screw assembly 290 may pass through a portion of the sealing material 140 disposed between the first functional dies 110 and through a portion of the sealing material disposed around the periphery of the second functional die 120 and the dummy die 130 in a threaded connection. A die 170 or a module (such as a power module) may be disposed above the contact pad 162 and coupled to the contact pad.

[0049] In the above embodiment, after removing the carrier, the insulating material 104 and the adhesive layer 108 are retained, as Figure 1F shown. It should be noted that the insulating material 104 and the adhesive layer 108 may be removed together with the carrier (or removed after removing the carrier), thereby obtaining Figure 9 the structure shown in. Figure 9 Corresponding to Figure 4 the embodiment of, in which the insulating material 104 and the adhesive layer 108 are removed together with the carrier. This can be equivalently applied to Figure 5 and Figure 6 the embodiments shown in and other embodiments described herein and intended to fall within the scope of the appended claims.

[0050] According to an embodiment, the package includes: a first die having a first side and a second side opposite to each other; a sealing material surrounding the first die; a redistribution layer (RDL) structure disposed on the first side of the first die and above the sealing material; a heat dissipation component disposed on the second side of the first die and above the sealing material; and a first screw assembly penetrating the first die, the RDL structure, and the heat dissipation component.

[0051] In some embodiments, the size of the first die is 62500 mm 2 to 90000 mm 2。In some embodiments, the length or diameter of the first die is from 250 mm to 320 mm. In some embodiments, the first die has rounded corners. In some embodiments, the first screw assembly includes bolts, and the diameter of the bolts is from 1 mm to 10 mm. In some embodiments, the package further includes a second screw assembly that penetrates the sealing material, the redistribution layer structure, and the heat dissipation component. In some embodiments, the package further includes an adhesive layer disposed between the first die and the heat dissipation component, and the first screw assembly penetrates the adhesive layer. In some embodiments, the adhesive layer has a central portion and an edge portion, and the thicknesses of the central portion and the edge portion are different. In some embodiments, the package further includes a second die that is disposed adjacent to the first die and is surrounded by the sealing material, wherein the size of the first die is at least 30 times the size of the second die. In some embodiments, the package further includes a third die that is surrounded by the sealing material, wherein the third die is electrically isolated from the first die. In some embodiments, the package further includes a substrate that attaches the redistribution layer structure through a connector, and the first screw assembly penetrates the substrate.

[0052] According to another embodiment, the package includes: a first functional die and a second functional die, surrounded by a sealing material, wherein the size of the first functional die is larger than the size of the second functional die; a redistribution layer (RDL) structure disposed above a first side of the first functional die, a first side of the second functional die, and a first side of the sealing material; a heat dissipation component disposed above a second side of the first functional die, a second side of the second functional die, and a second side of the sealing material; and a first screw assembly that penetrates the first die, the RDL structure, and the heat dissipation component.

[0053] In some embodiments, the package further includes a second screw assembly that penetrates the sealing material, the redistribution layer structure, and the heat dissipation component. In some embodiments, the size of the first functional die is at least 25 times the size of the second functional die. In some embodiments, the package further includes a substrate that attaches the redistribution layer structure, and the first screw assembly penetrates the substrate. In some embodiments, the first functional die includes a first contact component at its center and a second contact component at its edge, and the second functional die includes a third contact component at its center and a fourth contact component at its edge, wherein the height difference between the first contact component and the second contact component is greater than the height difference between the third contact component and the fourth contact component. In some embodiments, the first functional die is thicker than the second functional die.

[0054] According to yet another embodiment, the method includes: disposing a first die on a carrier, wherein the first die has a first side and a second side opposite the first side; forming a sealing material around the first die; grinding the first die and the sealing material from the second side of the first die; forming a redistribution layer (RDL) structure over the second side of the first die and the sealing material; removing the carrier; disposing a heat sink on top of the first side of the first die, and disposing a screw assembly to penetrate the first die, the RDL structure, and the heat sink.

[0055] In some embodiments, the first die has a size of 900 mm 2 to 90,000 mm 2 . In some embodiments, the method further includes: before forming the sealing material, disposing a second die above the carrier, and wherein the size of the first die is at least 25 times the size of the second die.

[0056] The foregoing outlines components of several embodiments so that those skilled in the art can better understand aspects of the present invention. Those of ordinary skill in the art should understand that they can readily use the present invention as a basis to design or modify other processes and structures to achieve the same purposes and / or achieve the same advantages as the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present invention, and that various changes, substitutions, and alterations can be made without departing from the spirit and scope of the present invention.

Claims

1. An encapsulation, comprising: A first functional die, having a first side and a second side opposite to each other; A sealing material surrounding the first functional die; A redistribution layer structure disposed above the first side of the first functional die and the sealing material; A heat dissipation component disposed above the second side of the first functional die and the sealing material; An interface material disposed between the first functional die and the heat dissipation component; And A first screw assembly penetrating the first functional die, the redistribution layer structure, and the heat dissipation component without damaging the active devices in the active region of the first functional die, wherein, in the top view, the first screw assembly is completely surrounded by the first functional die.

2. The package according to claim 1, wherein, The size of the first functional die is 62,500 mm 2 to 90,000 mm 2 .

3. The package according to claim 1, wherein, The length or diameter of the first functional die is 250 mm to 320 mm.

4. The package according to claim 1, wherein, The first functional die has rounded corners.

5. The package according to claim 1, wherein, The first screw assembly includes a bolt, and the diameter of the bolt is 1 mm to 10 mm.

6. The encapsulation according to claim 1, further comprising a second screw assembly, the second screw assembly penetrating the sealing material, the redistribution layer structure, and the heat dissipation component.

7. The encapsulation according to claim 1, further comprising an adhesive layer, the adhesive layer disposed between the first functional die and the heat dissipation component, and the first screw assembly penetrating the adhesive layer.

8. The package according to claim 7, wherein, The adhesive layer has a central portion and an edge portion, and the thicknesses of the central portion and the edge portion are different.

9. The package according to claim 1, further comprising a second die, the second die being disposed adjacent to the first functional die and surrounded by the encapsulating material, wherein, The size of the first functional die is at least 30 times the size of the second die.

10. The package according to claim 1 further includes a third die, the third die being surrounded by the sealing material, wherein, The third die is electrically isolated from the first functional die.

11. The encapsulation according to claim 1, further comprising a substrate, the substrate attaching the redistribution layer structure through a connecting member, and the first screw assembly penetrating the substrate.

12. An encapsulation, comprising: A first functional die and a second functional die, surrounded by a sealing material, wherein the size of the first functional die is larger than the size of the second functional die; A redistribution layer structure disposed above the first side of the first functional die, the first side of the second functional die, and the first side of the sealing material; A heat dissipation component disposed above the second side of the first functional die, the second side of the second functional die, and the second side of the sealing material; An interface material disposed between the first functional die and the heat dissipation component; and A first screw assembly penetrating the first functional die, the redistribution layer structure, and the heat dissipation component without damaging the active devices in the active region of the first functional die, wherein, in the top view, the first screw assembly is completely surrounded by the first functional die.

13. The encapsulation according to claim 12, further comprising a second screw assembly, the second screw assembly penetrating the sealing material, the redistribution layer structure, and the heat dissipation component.

14. The package according to claim 12, wherein, The size of the first functional die is at least 25 times the size of the second functional die.

15. The package according to claim 12 further includes a substrate, the substrate is attached to the redistribution layer structure, and the first screw assembly penetrates the substrate.

16. The package according to claim 12, wherein, The first functional die includes a first contact component at its center and a second contact component at its edge, and the second functional die includes a third contact component at its center and a fourth contact component at its edge, wherein the height difference between the first contact component and the second contact component is greater than the height difference between the third contact component and the fourth contact component, and wherein the first screw assembly passes between the first contact component and the second contact component.

17. The package according to claim 12, wherein, The first functional die is thicker than the second functional die.

18. A method of manufacturing a package, comprising: placing a first functional die above a carrier, wherein the first functional die has a first side and a second side opposite the first side, the carrier is a semiconductor wafer, and the first functional die is the first functional die in a wafer-level package; forming a sealing material around the first functional die; grinding the first functional die and the sealing material from the second side of the first functional die; forming a redistribution layer structure above the second side of the first functional die and the sealing material; removing the carrier; and placing a heat dissipation component above the first side of the first functional die, an interface material is disposed between the first functional die and the heat dissipation component; and setting a screw assembly to penetrate the first functional die, the redistribution layer structure, and the heat dissipation component in the wafer-level package and not damage the active devices in the active region of the first functional die in the wafer-level package, wherein in a top view, the screw assembly is completely surrounded by the first functional die.

19. The method according to claim 18, wherein, The size of the first functional die is 900 mm 2 to 90,000 mm 2 .

20. The method according to claim 18 further comprises: Before forming the sealing material, a second die is placed above the carrier, and wherein the size of the first functional die is at least 25 times the size of the second die.

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