Plasma processing device

Abstract

This invention relates to a plasma processing apparatus. The plasma processing apparatus includes: a process chamber; an electrode connection portion coupled to the upper end of the process chamber; an electrode plate coupled to the electrode connection portion; and a base spaced apart from the electrode plate and supporting a substrate. The electrode connection portion includes at least a first sub-electrode connection portion and a second sub-electrode connection portion, the second sub-electrode connection portion having a thickness different from that of the first sub-electrode connection portion and being adjacent to the first sub-electrode connection portion in a horizontal direction. The electrode plate is bent according to the step difference of the lower surface of the electrode connection portion, thereby having at least a partially bent lower surface.

Description

Technical Field

[0001] This invention relates to a plasma processing apparatus. Background Art

[0002] In the manufacturing of electronic devices such as semiconductors and display panels, sputtering, chemical vapor deposition (CVD), and other methods are used to form thin films on substrates. Recently, in order to improve the film properties, plasma-based chemical vapor deposition equipment is used.

[0003] Recently, with the scaling up of plasma processing equipment used for plasma chemical vapor deposition, the plasma may be applied unevenly to the substrate due to the increased size of the electrodes or thermal deformation of the electrodes at high temperatures. As a result, the properties of the thin film may deteriorate. Summary of the Invention

[0004] The purpose of this invention is to provide a plasma processing device that allows for easy adjustment of the shape of the electrode surface.

[0005] However, the purpose of this invention is not limited to the above-mentioned purpose, and the invention can be extended in various ways without departing from the spirit and concept of the invention.

[0006] To achieve the aforementioned objectives of the present invention, a plasma processing apparatus according to an exemplary embodiment of the present invention includes: a process chamber; an electrode connection portion coupled to the upper end of the process chamber; an electrode plate coupled to the electrode connection portion; and a base spaced apart from the electrode plate and supporting a substrate. The electrode connection portion includes at least a first sub-electrode connection portion and a second sub-electrode connection portion, the second sub-electrode connection portion having a thickness different from that of the first sub-electrode connection portion and being adjacent to the first sub-electrode connection portion in a horizontal direction. The electrode plate is bent according to a step difference in the lower surface of the electrode connection portion, thereby having at least a partially bent lower surface.

[0007] According to one embodiment, the electrode connection portion and the electrode plate comprise metal.

[0008] According to one embodiment, the electrode connection portion and the electrode plate comprise aluminum.

[0009] According to one embodiment, the electrode connection portion and the electrode plate comprise the same material.

[0010] According to one embodiment, the electrode connection portion further includes: a third sub-electrode connection portion, which is spaced apart from the second sub-electrode connection portion and adjacent to the first sub-electrode connection portion, wherein the first sub-electrode connection portion has a thickness greater than the thickness of the second sub-electrode connection portion and the third sub-electrode connection portion.

[0011] According to one embodiment, the electrode connection portion further includes: a third sub-electrode connection portion, which is spaced apart from the second sub-electrode connection portion and adjacent to the first sub-electrode connection portion, wherein the first sub-electrode connection portion has a thickness smaller than the thickness of the second sub-electrode connection portion and the third sub-electrode connection portion.

[0012] According to one embodiment, the electrode connection portion further includes: a third sub-electrode connection portion, which is spaced apart from the first sub-electrode connection portion and adjacent to the second sub-electrode connection portion, wherein the first sub-electrode connection portion has a thickness greater than the thickness of the second sub-electrode connection portion, and the second sub-electrode connection portion has a thickness greater than the thickness of the third sub-electrode connection portion.

[0013] According to one embodiment, the first sub-electrode connection portion has a lower surface parallel to the horizontal direction, and the second sub-electrode connection portion has a lower surface inclined relative to the horizontal direction.

[0014] According to one embodiment, the first end of the second sub-electrode connection portion adjacent to the first sub-electrode connection portion has the same thickness as the first sub-electrode connection portion, and the second end opposite to the first end portion has a thickness less than the thickness of the first end portion.

[0015] According to one embodiment, at least one of the first sub-electrode connection portion and the second sub-electrode connection portion has an arc-shaped corner adjacent to the electrode plate.

[0016] According to one embodiment, the first sub-electrode connection portion and the second sub-electrode connection portion are joined by a concave-convex structure.

[0017] According to one embodiment, at least a portion of the lower surface of the electrode plate includes a convex curved surface.

[0018] According to one embodiment, at least a portion of the lower surface of the electrode plate includes a recessed curved surface.

[0019] According to one embodiment, the electrode plate includes vents for injecting process gas.

[0020] According to one embodiment, each of the first sub-electrode connection portion and the second sub-electrode connection portion includes: a buffer region connected to the vent to deliver the process gas.

[0021] According to one embodiment, the process gas includes a deposition gas.

[0022] According to one embodiment, the electrode plate is electrically connected to a power source for forming plasma.

[0023] According to one embodiment, the base is electrically connected to a bias power supply for introducing plasma ions into the substrate.

[0024] A plasma processing apparatus according to an exemplary embodiment of the present invention includes: a process chamber; an electrode connection portion coupled to an upper end of the process chamber; an electrode plate coupled to the electrode connection portion; and a base spaced apart from the electrode plate and supporting a substrate. The electrode connection portion includes a lower surface having a stepped difference, and the electrode plate is bent according to the stepped difference of the lower surface of the electrode connection portion.

[0025] According to an exemplary embodiment of the present invention, the shape of the lower surface of the electrode plate in the plasma processing apparatus can be adjusted as needed, and the degradation of the deposited film quality caused by plasma inhomogeneity can be improved. Attached Figure Description

[0026] Figure 1 This is a conceptual diagram illustrating the structure of a plasma processing apparatus according to an embodiment of the present invention.

[0027] Figure 2 This is a side view illustrating the electrode connection portion and electrode plate of a plasma processing apparatus according to an embodiment of the present invention.

[0028] Figure 3 This is a magnified image. Figure 2 A cross-sectional view of region A.

[0029] Figure 4 and Figure 5 This is a side view illustrating the electrode connection portion and electrode plate of a plasma processing apparatus according to an embodiment of the present invention.

[0030] Figures 6 to 8 This is a plan view illustrating the electrode connection portion of a plasma processing apparatus according to an embodiment of the present invention.

[0031] Figures 9 to 11 This is an enlarged cross-sectional view of the electrode connection portion and electrode plate of a plasma processing apparatus according to an embodiment of the present invention. Detailed Implementation

[0032] Hereinafter, with reference to the accompanying drawings, a plasma processing apparatus according to an exemplary embodiment of the present invention will be described in detail.

[0033] Figure 1 This is a conceptual diagram illustrating the structure of a plasma processing apparatus according to an embodiment of the present invention.

[0034] Reference Figure 1According to one embodiment, the plasma processing apparatus may include an electrode plate 110, an electrode connection portion 120, a process chamber 130, a gas supply portion 140, a base 150, a first power supply portion 160, and a second power supply portion 170. The plasma processing apparatus can be used for deposition or etching. According to one embodiment, the plasma processing apparatus can be used for chemical vapor deposition.

[0035] The process chamber 130 can provide a sealed space for etching or deposition. For example, the process chamber 130 can be cylindrical or prism-shaped, but embodiments of the invention are not limited thereto. The process chamber 130 can include metal, such as aluminum or stainless steel. For example, the process chamber 130 can be grounded.

[0036] For example, the plasma processing apparatus can generate plasma from gas entering the process chamber 130, and a plasma generation space PA can be defined between the electrode plate 110 and the base 150. A substrate SB is arranged on the base 150.

[0037] The electrode plate 110 can be arranged in the upper space within the process chamber 130, and the base 150 can be arranged in the lower space within the process chamber 130. For example, the electrode connection portion 120 can be arranged at the upper ends of the electrode plate 110 and the process chamber 130 (e.g., Figure 2 The upper end portion 130a) is shown. The electrode plate 110 may have a lower surface facing the plasma generation space PA or the base 150.

[0038] For example, the electrode plate 110 may have a polygonal shape such as a rectangle or square, or a circular shape.

[0039] The electrode plate 110 can receive process gas from the gas supply unit 140 and then supply gas to the interior of the process chamber 130. For example, the electrode plate 110 may include a gas hole GH for injecting the gas, which can inject the process gas into the plasma generation space PA or into the substrate SB arranged on the base 150. For example, the electrode plate 110 may have a nozzle shape.

[0040] For example, a gas delivery component 132 may be integrated into the upper end of the process chamber 130, and the gas delivery component 132 may be connected to a flow controller 142. The flow controller 142 may be connected to the gas supply unit 140. The gas delivery component 132 may be connected to the electrode connection unit 120. The electrode connection unit 120 may include a buffer region 122 connected to the gas delivery component 132. The buffer region 122 may be connected to the vent GH of the electrode plate 110, thereby delivering the process gas to the vent GH.

[0041] The process gas can vary depending on the application of the plasma processing device.

[0042] According to one embodiment, the process gas may include a deposition gas. The deposition gas may include suitable precursors depending on the composition of the deposited film. For example, silicon precursor gases may include silane (SiH4), silane (Si2H6), propane (Si3H8), and tetrasilane (Si4H6). 10 The process gas may include silicon tetrafluoride (SiF4), silicon tetrachloride (SiCl4), dichlorosilane (SiH2Cl2), or combinations thereof. Nitrogen precursor gases may include N2, ammonia (NH3), hydrazine (N2H2), hydrazine (N2H4), or combinations thereof. Oxygen precursor gases may include O2, H2O, or combinations thereof. The process gas may also include argon, hydrogen, helium, or combinations thereof as carrier gases.

[0043] According to one embodiment, the process gas may include an etching gas. For example, the etching gas may include chlorine or fluorine. For example, the etching gas may include NF3, C2F6, CF4, COS, SF6, Cl2, BCl3, C2HF5, or combinations thereof.

[0044] The base 150 can be disposed on the lower support portion 152. The base 150 can function as a lower electrode. The base 150 may include a heating structure for heating the substrate to the temperature required for the SB process. Furthermore, in order to control the temperature of the substrate during plasma processing, a refrigerant flow path can be formed inside the base 150.

[0045] The base 150 may include a chuck. The substrate SB may be disposed on the chuck. For example, the chuck may be an electrostatic chuck (ESC) that uses electrostatic principles to fix the substrate SB. For example, the electrostatic chuck may include a dielectric material with electrodes disposed internally, and the electrodes may be subject to a DC power supply.

[0046] However, the embodiments of the present invention are not limited thereto, and the chuck can also fix the substrate SB by mechanical clamping or vacuum pressing.

[0047] The electrode plate 110 and the base 150 can be powered respectively.

[0048] For example, the base 150 can be electrically connected to the first power supply unit 160 via a first matching device 162. The first matching device 162 can match the impedance of the first power supply unit 160 with the impedance of the process chamber 130. The first power supply unit 160 can output a bias power supply and can output a high frequency suitable for controlling the frequency of ion energy introduced into the substrate SB.

[0049] For example, the electrode plate 110 can be electrically connected to the second power supply unit 170 via a second matching device 172. The second matching device 172 can match the impedance of the second power supply unit 170 with the impedance of the process chamber 130. For example, the second power supply unit 170 can output a high frequency suitable for discharging the process gas in the process chamber 130 to generate plasma. In another embodiment, the electrode plate 110 can also be provided with a DC power supply.

[0050] The process chamber 130 may include a gate valve 134 and an exhaust port 136.

[0051] The gate valve 134 may be formed on the side wall of the process chamber 130. The substrate SB can enter or exit the process chamber 130 through the gate valve 134.

[0052] The exhaust port 136 can be connected to a vacuum pump, and a pressure control valve, a flow control valve, etc., can be installed in the exhaust port 136. The vacuum pump can reduce the pressure of the process chamber 130, thereby discharging the process gas or reaction products inside the process chamber 130.

[0053] Figure 2 This is a side view illustrating the electrode connection portion and electrode plate of a plasma processing apparatus according to an embodiment of the present invention. Figure 3 This is a magnified image. Figure 2 A cross-sectional view of region A.

[0054] Reference Figure 2 and Figure 3 The electrode plate 110 is combined with the electrode connection portion 120, which is attached to the upper end portion 130a of the process chamber 130. Therefore, the electrode connection portion 120 is arranged between the upper end portion 130a of the process chamber 130 and the electrode plate 110.

[0055] The electrode connection portion 120 may include a plurality of sub-electrode connection portions. According to one embodiment, the electrode connection portion 120 may include a first sub-electrode connection portion 120a, a second sub-electrode connection portion 120b, and a third sub-electrode connection portion 120c, wherein the first sub-electrode connection portion 120a may be disposed between the second sub-electrode connection portion 120b and the third sub-electrode connection portion 120c.

[0056] According to one embodiment, the first sub-electrode connection portion 120a and the second sub-electrode connection portion 120b may have different thicknesses. For example, the thickness T1 of the first sub-electrode connection portion 120a is greater than the thickness T2 of the second sub-electrode connection portion 120b. Furthermore, the thickness T1 of the first sub-electrode connection portion 120a may be greater than the thickness of the third sub-electrode connection portion 120c. The thickness of the third sub-electrode connection portion 120c may be substantially the same as the thickness T2 of the second sub-electrode connection portion 120b.

[0057] The first sub-electrode connection portion 120a, the second sub-electrode connection portion 120b, and the third sub-electrode connection portion 120c are coupled to the upper end portion 130a of the process chamber 130 such that their respective upper surfaces contact the lower surface of the upper end portion 130a. Therefore, due to the thickness difference between the first sub-electrode connection portion 120a, the second sub-electrode connection portion 120b, and the third sub-electrode connection portion 120c, the lower surfaces of adjacent sub-electrode connection portions have a height difference. Furthermore, the upper surface of the electrode plate 110 is in close contact with the lower surface of each of the first sub-electrode connection portion 120a, the second sub-electrode connection portion 120b, and the third sub-electrode connection portion 120c. However, in certain regions, such as the boundary regions between sub-electrode connection portions, the upper surface of the electrode plate 110 may be spaced apart from the lower surface of the sub-electrode connection portion.

[0058] Therefore, the electrode plate 110 can be bent entirely or partially due to the height difference of the lower surfaces of the sub-electrode connections. Accordingly, the electrode plate 110 can have an uneven lower surface. For example, at least a portion of the lower surface of the electrode plate 110 can be bent. For example, as shown in the figure, when the thickness of the first sub-electrode connection 120a arranged in the middle is greater than the thickness of the second sub-electrode connection 120b and the third sub-electrode connection 120c arranged on both sides, the lower surface of the electrode plate 110 can form a convex curved surface.

[0059] According to one embodiment, the first sub-electrode connection portion 120a and the second sub-electrode connection portion 120b can be tightly attached to the lower surface of the upper end portion 130a of the process chamber 130 through chamber connecting components 124a and 124b.

[0060] The electrode plate 110 can be tightly attached to the lower surfaces of the first sub-electrode connection portion 120a and the second sub-electrode connection portion 120b through the first electrode connecting parts 112a and 112b.

[0061] According to one embodiment, the plasma processing apparatus may further include a second electrode coupling member 114 that connects the electrode plate 110 to the upper end portion 130a of the process chamber 130. One end of the second electrode coupling member 114 may be inserted into the side of the electrode plate 110, and the other end of the second electrode coupling member 114 may be coupled to the lower surface of the upper end portion 130a of the process chamber 130. The second electrode coupling member 114 may extend along the side of the electrode connection portion 120.

[0062] The first sub-electrode connection portion 120a and the second sub-electrode connection portion 120b may each include buffer regions 122a and 122b, respectively. The buffer regions 122a and 122b are connected to the corresponding vents GHa and GHb, so that the process gas delivered from the buffer regions 122a and 122b can be discharged through the vents GHa and GHb.

[0063] The electrode connection portion 120 and the electrode plate 110 may include a conductive material. For example, the electrode connection portion 120 and the electrode plate 110 may include a metal. According to one embodiment, the electrode connection portion 120 and the electrode plate 110 may include aluminum, and their surfaces may be treated with an aluminate film. However, embodiments of the present invention are not limited thereto. For example, the electrode connection portion 120 and the electrode plate 110 may include materials different from each other.

[0064] According to one embodiment, the electrode connection portion disposed between the electrode plate and the process chamber includes a plurality of sub-electrode connections that are adjacent to each other in the horizontal direction, and the first sub-electrode connection portion has a thickness different from that of the adjacent second sub-electrode connection portion. Accordingly, a bending force is applied to the electrode plate that is coupled to the first and second sub-electrode connections, thereby enabling deformation of the lower surface shape of the electrode plate. Accordingly, the lower surface shape of the electrode plate can be adjusted as needed, and the degradation of the deposited film quality due to plasma inhomogeneity can be improved.

[0065] Figure 4 and Figure 5 This is a side view illustrating the electrode connection portion and electrode plate of a plasma processing apparatus according to an embodiment of the present invention.

[0066] Reference Figure 4The electrode plate 110 is combined with the electrode connection portion 120, which is combined with the upper end portion 130a of the process chamber 130. Therefore, the electrode connection portion 120 is arranged between the upper end portion 130a of the process chamber 130 and the electrode plate 110.

[0067] The electrode connection portion 120 may include a plurality of sub-electrode connection portions. According to one embodiment, the electrode connection portion 120 may include a first sub-electrode connection portion 120a, a second sub-electrode connection portion 120b, a third sub-electrode connection portion 120c, a fourth sub-electrode connection portion 120d, and a fifth sub-electrode connection portion 120e. The second sub-electrode connection portion 120b may be disposed between the first sub-electrode connection portion 120a and the third sub-electrode connection portion 120c, and the fourth sub-electrode connection portion 120d may be disposed between the first sub-electrode connection portion 120a and the fifth sub-electrode connection portion 120e.

[0068] According to one embodiment, the first sub-electrode connection portion 120a, the second sub-electrode connection portion 120b, and the third sub-electrode connection portion 120c may have different thicknesses. For example, the thickness T1 of the first sub-electrode connection portion 120a is greater than the thickness T2 of the second sub-electrode connection portion 120b. Furthermore, the thickness T2 of the second sub-electrode connection portion 120b is greater than the thickness T3 of the third sub-electrode connection portion 120c. Also, the thickness T1 of the first sub-electrode connection portion 120a is greater than the thickness of the fourth sub-electrode connection portion 120d. And the thickness of the fourth sub-electrode connection portion 120d is greater than the thickness of the fifth sub-electrode connection portion 120e. For example, the thickness T3 of the third sub-electrode connection portion 120c may be substantially the same as the thickness of the fifth sub-electrode connection portion 120e, and the thickness T2 of the second sub-electrode connection portion 120b may be substantially the same as the thickness of the fourth sub-electrode connection portion 120d.

[0069] The first sub-electrode connection portion 120a, the second sub-electrode connection portion 120b, the third sub-electrode connection portion 120c, the fourth sub-electrode connection portion 120d, and the fifth sub-electrode connection portion 120e are coupled to the upper end portion 130a of the process chamber 130 such that their respective upper surfaces contact the lower surface of the upper end portion 130a of the process chamber 130. Therefore, due to the thickness difference between the first sub-electrode connection portion 120a, the second sub-electrode connection portion 120b, the third sub-electrode connection portion 120c, the fourth sub-electrode connection portion 120d, and the fifth sub-electrode connection portion 120e, the lower surfaces of adjacent sub-electrode connection portions have a height difference. Furthermore, the upper surface of the electrode plate 110 is in close contact with the lower surface of each of the first sub-electrode connection portion 120a, the second sub-electrode connection portion 120b, the third sub-electrode connection portion 120c, the fourth sub-electrode connection portion 120d, and the fifth sub-electrode connection portion 120e.

[0070] Therefore, the electrode plate 110 can be bent entirely or partially due to the height difference of the lower surface of the sub-electrode connection portion. Accordingly, at least a portion of the lower surface of the electrode plate 110 can be formed as a curved surface or bendable. For example, as shown in the figure, at least a portion of the lower surface of the electrode plate 110 can be formed as a convex curved surface.

[0071] If the height difference between adjacent sub-electrode connections is too large, stress will be locally concentrated on the electrode plate 110, which may cause the electrode plate 110 to break or fall off.

[0072] According to one embodiment, by increasing the number of sub-electrode connections and reducing the height difference between adjacent sub-electrode connections, localized stress concentration on the electrode plate 110 can be prevented. For example, to allow the electrode plate 110 to deform by 2 mm in the vertical direction, the thickness difference between the first sub-electrode connection 120a and the second sub-electrode connection 120b can be 1 mm, and the thickness difference between the second sub-electrode connection 120b and the third sub-electrode connection 120c can be 1 mm.

[0073] Reference Figure 5 The electrode plate 110 is combined with the electrode connection portion 120, which is attached to the upper end portion 130a of the process chamber 130. Therefore, the electrode connection portion 120 is arranged between the upper end portion 130a of the process chamber 130 and the electrode plate 110.

[0074] The electrode connection portion 120 may include a plurality of sub-electrode connection portions. According to one embodiment, the electrode connection portion 120 may include a first sub-electrode connection portion 120a, a second sub-electrode connection portion 120b, and a third sub-electrode connection portion 120c, and the first sub-electrode connection portion 120a may be arranged between the second sub-electrode connection portion 120b and the third sub-electrode connection portion 120c.

[0075] According to one embodiment, the thickness of the first sub-electrode connection portion 120a is less than the thickness of the second sub-electrode connection portion 120b. Furthermore, the thickness of the first sub-electrode connection portion 120a is less than the thickness of the third sub-electrode connection portion 120c. The thickness of the third sub-electrode connection portion 120c may be substantially the same as the thickness of the second sub-electrode connection portion 120b.

[0076] The first sub-electrode connection portion 120a, the second sub-electrode connection portion 120b, and the third sub-electrode connection portion 120c are coupled to the upper end portion 130a of the process chamber 130 such that their respective upper surfaces contact the lower surface of the upper end portion 130a. Therefore, due to the thickness difference between the first sub-electrode connection portion 120a, the second sub-electrode connection portion 120b, and the third sub-electrode connection portion 120c, the lower surfaces of adjacent sub-electrode connection portions have a height difference. Furthermore, the upper surface of the electrode plate 110 is in close contact with the lower surface of each of the first sub-electrode connection portion 120a, the second sub-electrode connection portion 120b, and the third sub-electrode connection portion 120c.

[0077] Therefore, the electrode plate 110 can be bent entirely or partially due to the height difference of the lower surface of the sub-electrode connection portion. Accordingly, at least a portion of the lower surface of the electrode plate 110 can be formed into a curved surface or a bend. For example, as shown in the figure, at least a portion of the lower surface of the electrode plate 110 can be formed into a concave curved surface.

[0078] Figures 6 to 8 This is a plan view illustrating the electrode connection portion of a plasma processing apparatus according to an embodiment of the present invention. For example, Figure 6 Can be illustrated Figure 2 The electrode connection section shown, Figure 7 Can be illustrated Figure 4 The electrode connection section shown.

[0079] Reference Figure 6The electrode connection portion 120 may include a first sub-electrode connection portion 120a, a second sub-electrode connection portion 120b, and a third sub-electrode connection portion 120c. The first sub-electrode connection portion 120a, the second sub-electrode connection portion 120b, and the third sub-electrode connection portion 120c may be arranged along a first direction D1 and extend along a second direction D2 that is perpendicular to the first direction D1.

[0080] Reference Figure 7 The electrode connection portion 120 may include a first sub-electrode connection portion 120a, a second sub-electrode connection portion 120b, a third sub-electrode connection portion 120c, a fourth sub-electrode connection portion 120d, and a fifth sub-electrode connection portion 120e. The first sub-electrode connection portion 120a, the second sub-electrode connection portion 120b, the third sub-electrode connection portion 120c, the fourth sub-electrode connection portion 120d, and the fifth sub-electrode connection portion 120e may be arranged along a first direction D1 and extend along a second direction D2 that is perpendicular to the first direction D1.

[0081] Reference Figure 8 The electrode connection portion 120 may include nine sub-electrode connection portions, which may be arranged in a matrix configuration along a first direction D1 and a second direction D2 perpendicular to the first direction D1. Embodiments of the present invention are not limited to the illustrations; for example, the electrode connection portion 120 may include a variety of numbers of sub-electrode connection portions. Furthermore, the sub-electrode connection portions may have different shapes or sizes.

[0082] Accordingly, the shape of the electrode plate coupled with the electrode connection portion 120 can be adjusted more precisely.

[0083] Figures 9 to 11 This is an enlarged cross-sectional view of the electrode connection portion and electrode plate of a plasma processing apparatus according to an embodiment of the present invention.

[0084] Reference Figure 9 The first sub-electrode connection portion 120a and the second sub-electrode connection portion 120b can be tightly attached to the lower surface of the upper end portion 130a of the process chamber 130 through the chamber connecting components 124a and 124b.

[0085] The electrode plate 110 can be tightly attached to the lower surfaces of the first sub-electrode connection portion 120a and the second sub-electrode connection portion 120b through the first electrode connecting parts 112a and 112b.

[0086] According to one embodiment, the first sub-electrode connection portion 120a may have a lower surface parallel to the horizontal direction, and the second sub-electrode connection portion 120b may have a lower surface inclined relative to the horizontal direction. For example, the thickness T2a of the first end of the second sub-electrode connection portion 120b adjacent to the first sub-electrode connection portion 120a may be greater than the thickness T2b of the second end opposite to the first end. For example, the thickness T2a of the first end may be substantially the same as the thickness T1 of the first sub-electrode connection portion 120a, thereby connecting the lower surfaces of the first sub-electrode connection portion 120a and the lower surfaces of the second sub-electrode connection portion 120b without any step difference.

[0087] Reference Figure 10 The first sub-electrode connection portion 120a and the second sub-electrode connection portion 120b may each have a lower surface parallel to the horizontal direction. The thickness T1 of the first sub-electrode connection portion 120a may be greater than the thickness T2 of the second sub-electrode connection portion 120b. In the first sub-electrode connection portion 120a and the second sub-electrode connection portion 120b, the corners adjacent to the electrode plate 110 may have an arc shape.

[0088] according to Figure 9 and Figure 10 The configuration shown can prevent stress concentration in the bent area of ​​the electrode plate 110, which could lead to damage to the electrode plate 110.

[0089] Reference Figure 11 The contact surfaces of the first sub-electrode connection portion 120a and the second sub-electrode connection portion 120b may have an uneven structure. For example, the second sub-electrode connection portion 120b may include a protrusion PT protruding from the side, and the first sub-electrode connection portion 120a may have a recess for receiving the protrusion PT.

[0090] However, embodiments of the present invention are not limited thereto. For example, the first sub-electrode connection portion 120a may include a protrusion extending from the side, and the second sub-electrode connection portion 120b has a recess for receiving the protrusion.

[0091] According to one embodiment, since the contact surfaces of the first sub-electrode connection portion 120a and the second sub-electrode connection portion 120b have an uneven structure, leakage of process gas can be prevented in the boundary area of ​​adjacent sub-electrode connection portions.

[0092] Although the above description has been made with reference to exemplary embodiments of the present invention, those skilled in the art should understand that various modifications and alterations can be made to the present invention without departing from the spirit and concept of the invention as set forth in the claims.

[0093] Industrial availability

[0094] This invention can be used to form deposited films on a substrate or to etch a substrate. For example, this invention can be used for the formation of insulating and dielectric layers in display devices, semiconductor devices, etc.

Claims

1. A plasma processing apparatus, comprising: Process chambers; An electrode connection portion is attached to the upper end of the process chamber and includes at least a first sub-electrode connection portion and a second sub-electrode connection portion, wherein the second sub-electrode connection portion has a thickness different from that of the first sub-electrode connection portion and is adjacent to the first sub-electrode connection portion in the horizontal direction. An electrode plate, coupled to the electrode connection portion, and bent according to the step difference of the lower surface of the electrode connection portion, thereby having at least a partially bent lower surface; and The base, spaced apart from the electrode plate, supports the substrate.

2. The plasma processing apparatus according to claim 1, characterized in that, The electrode connection portion and the electrode plate are made of metal.

3. The plasma processing apparatus according to claim 2, characterized in that, The electrode connection portion and the electrode plate are made of aluminum.

4. The plasma processing apparatus according to claim 1, characterized in that, The electrode connection portion and the electrode plate are made of the same material.

5. The plasma processing apparatus according to claim 1, characterized in that, The electrode connection portion further includes: a third sub-electrode connection portion, which is spaced apart from the second sub-electrode connection portion and adjacent to the first sub-electrode connection portion. The first sub-electrode connection portion has a thickness greater than that of the second sub-electrode connection portion and the third sub-electrode connection portion.

6. The plasma processing apparatus according to claim 1, characterized in that, The electrode connection portion further includes: a third sub-electrode connection portion, which is spaced apart from the second sub-electrode connection portion and adjacent to the first sub-electrode connection portion. The first sub-electrode connection portion has a thickness smaller than that of the second sub-electrode connection portion and the third sub-electrode connection portion.

7. The plasma processing apparatus according to claim 1, characterized in that, The electrode connection portion further includes: a third sub-electrode connection portion, which is spaced apart from the first sub-electrode connection portion and adjacent to the second sub-electrode connection portion. The first sub-electrode connection portion has a thickness greater than that of the second sub-electrode connection portion, and the second sub-electrode connection portion has a thickness greater than that of the third sub-electrode connection portion.

8. The plasma processing apparatus according to claim 1, characterized in that, The first sub-electrode connection portion has a lower surface parallel to the horizontal direction, and the second sub-electrode connection portion has a lower surface inclined relative to the horizontal direction.

9. The plasma processing apparatus according to claim 8, characterized in that, The first end of the second sub-electrode connection portion adjacent to the first sub-electrode connection portion has the same thickness as the first sub-electrode connection portion, and the second end opposite to the first end portion has a thickness less than the thickness of the first end portion.

10. The plasma processing apparatus according to claim 1, characterized in that, At least one of the first sub-electrode connection portion and the second sub-electrode connection portion has an arc-shaped corner adjacent to the electrode plate.

11. The plasma processing apparatus according to claim 1, characterized in that, The first sub-electrode connection portion and the second sub-electrode connection portion are joined together by a concave-convex structure.

12. The plasma processing apparatus according to claim 1, characterized in that, At least a portion of the lower surface of the electrode plate includes a convex curved surface.

13. The plasma processing apparatus according to claim 1, characterized in that, At least a portion of the lower surface of the electrode plate includes a recessed curved surface.

14. The plasma processing apparatus according to claim 1, characterized in that, The electrode plate includes vents for injecting process gas.

15. The plasma processing apparatus according to claim 14, characterized in that, Each of the first sub-electrode connection portion and the second sub-electrode connection portion includes: a buffer region connected to the vent to deliver the process gas.

16. The plasma processing apparatus according to claim 14, characterized in that, The process gas includes deposition gas.

17. The plasma processing apparatus according to claim 1, characterized in that, The electrode plate is electrically connected to a power source for generating plasma.

18. The plasma processing apparatus according to claim 1, characterized in that, The base is electrically connected to a bias power supply for introducing plasma ions into the substrate.

19. A plasma processing apparatus, comprising: Process chambers; An electrode connection portion is attached to the upper end of the process chamber and includes a lower surface with a stepped difference. An electrode plate is attached to the lower surface of the electrode connection portion and is bent according to the step difference of the lower surface of the electrode connection portion; as well as The base, spaced apart from the electrode plate, supports the substrate.

20. The plasma processing apparatus according to claim 19, characterized in that, The electrode connection portion includes at least: a first sub-electrode connection portion; and a second sub-electrode connection portion having a thickness different from that of the first sub-electrode connection portion and being adjacent to the first sub-electrode connection portion in the horizontal direction.

Images