Semiconductor device having a stele structure and method of manufacturing the same

Abstract

Disclosed is a semiconductor device that is a semiconductor device having a dolmen structure, including: a substrate; a first chip disposed on the substrate; a plurality of support pieces disposed on the substrate and around the first chip; and a chip with an adhesive sheet supported by the plurality of support pieces and disposed so as to cover the first chip, the chip with the adhesive sheet including a second chip and an adhesive sheet provided on one face of the second chip, the shear strength of the support pieces and the chip with the adhesive sheet at 250°C being 3.2 MPa or greater.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a semiconductor device having a dolmen structure, including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed on the substrate and around the first chip, and a second chip supported by the plurality of support pieces and disposed so as to cover the first chip. The present disclosure also relates to a manufacturing method of a semiconductor device having a dolmen structure. In addition, a dolmen is a type of stone tomb having a plurality of support stones and a plate-shaped rock placed thereon. In the semiconductor device having a dolmen structure, the support pieces correspond to the "support stones", and the second chip corresponds to the "plate-shaped rock". BACKGROUND

[0002] In recent years, in the field of semiconductor devices, high integration, miniaturization, and high speed are required. As one way of semiconductor devices, a structure in which a semiconductor chip is stacked on a controller chip disposed on a substrate has attracted attention. For example, Patent Literature 1 discloses a semiconductor die assembly including a controller die, and a memory die supported by a support member on the controller die. The semiconductor die assembly of Patent Literature 1 has a dolmen structure. That is, the semiconductor die assembly includes a package substrate, a controller die disposed on a surface of the package substrate, a memory die disposed above the controller die, and a support member supporting the memory die. Figure 1 The semiconductor assembly 100 illustrated in FIG. A can be said to have a dolmen structure. That is, the semiconductor assembly 100 includes a package substrate 102, a controller die 103 disposed on a surface of the package substrate 102, a memory die 106a disposed above the controller die 103, a memory die 106b, and a support member 130a supporting the memory die 106a, and a support member 130b.

[0003] Prior Art Documents

[0004] Patent Literature

[0005] Patent Literature 1: Japanese Patent Publication No. 2017-515306 SUMMARY

[0006] Technical Problem to be Solved by the Invention

[0007] Patent Literature 1 discloses that, as the support member (support piece), a semiconductor material such as silicon can be used, and more specifically, a fragment of a semiconductor material obtained by cutting a semiconductor wafer can be used (see

[0012] ,

[0014] , and

[0015] of Patent Literature 1). In order to manufacture a support piece for a dolmen structure using a semiconductor wafer, like the manufacture of a general semiconductor chip, for example, each of the following processes is required. Figure 2 ) In order to manufacture a support piece for a dolmen structure using a semiconductor wafer, like the manufacture of a general semiconductor chip, for example, each of the following processes is required.

[0008] (1) a process of attaching a back grind tape to the semiconductor wafer;

[0009] (2) a process of grinding the back surface of the semiconductor wafer;

[0010] (3) a process of attaching a film (dicing / die-bonding integrated film) having a pressure-sensitive adhesive layer and an adhesive layer to the cut ring and the semiconductor wafer after back surface grinding disposed therein;

[0011] (4) a process of peeling the back surface grinding tape from the semiconductor wafer;

[0012] (5) a process of singulating the semiconductor wafer;

[0013] (6) a process of picking up the support sheet of the laminate including the semiconductor chip and the adhesive sheet from the pressure-sensitive adhesive layer.

[0014] The present disclosure provides a manufacturing method of a semiconductor device, in a manufacturing process of a semiconductor device having a dolmen structure, capable of simplifying a process of producing a support sheet, and further capable of stably supporting a laminated semiconductor chip. Also, the present disclosure provides a semiconductor device having a dolmen structure.

[0015] Means for solving technical problems

[0016] One aspect of the present disclosure relates to a manufacturing method of a semiconductor device having a dolmen structure. The manufacturing method includes the following processes.

[0017] (A) a process of preparing a laminate film having a base material film, a pressure-sensitive adhesive layer, and a support sheet-forming film having at least a thermosetting resin layer in this order;

[0018] (B) a process of forming a plurality of support sheets on the surface of the pressure-sensitive adhesive layer by singulating the support sheet-forming film;

[0019] (C) a process of picking up the support sheet from the pressure-sensitive adhesive layer;

[0020] (D) a process of disposing a first chip on a substrate;

[0021] (E) a process of disposing a plurality of support sheets on the substrate and around the first chip;

[0022] (F) a process of preparing a chip with an adhesive sheet having a second chip and an adhesive sheet provided on one face of the second chip; and

[0023] (G) a process of constructing a dolmen structure by disposing the chip with the adhesive sheet on the surface of the plurality of support sheets.

[0024] In the manufacturing method of the present disclosure, the support sheet is obtained by singulating the support sheet forming film. Thus, compared with the conventional manufacturing method in which a fragment of a semiconductor material obtained by cutting a semiconductor wafer is used as a support sheet, the process of manufacturing the support sheet can be simplified. That is, in the conventional method, the processes of (1) to (6) described above are required, whereas, in the present disclosure, the support sheet forming film does not include a semiconductor wafer, and thus the processes of (1), (2), and (4) related to polishing the back surface of the semiconductor wafer can be omitted. Further, since the semiconductor wafer, which is expensive compared with the resin material, is not used, the cost can be reduced. In addition, since the thermosetting resin layer has adhesiveness with respect to other members (for example, a substrate), an adhesive layer or the like can not be provided on the support sheet.

[0025] In the support sheet forming film, the shear strength between the support sheet (a cured product of the support sheet forming film) of the support sheet forming film after being heat-pressed to the adhesive sheet of the chip with adhesive sheet at 170°C for 1 hour and the chip with adhesive sheet at 250°C is 3.2 MPa or more. The support sheet formed from such a support sheet forming film has a tendency to have a high shear strength compared with the previous support sheet using a fragment of a semiconductor material obtained by cutting a semiconductor wafer. The reason is considered to be, for example, that the support sheet forming film and the adhesive sheet are cured products of resins. By using a support sheet including such a support sheet forming film, the laminated semiconductor chips (chips with adhesive sheet) can be stably supported.

[0026] The pressure-sensitive adhesive layer of the laminated film prepared in the (A) process can be pressure-sensitive or ultraviolet-curable. That is, the pressure-sensitive adhesive layer can be cured by ultraviolet irradiation or can not be cured by ultraviolet irradiation, in other words, can or can not contain a resin having a carbon-carbon double bond having a light reactivity. In addition, the pressure-sensitive pressure-sensitive adhesive layer can contain a resin having a carbon-carbon double bond having a light reactivity. For example, the pressure-sensitive adhesive layer can have a region whose adhesiveness is reduced by irradiating ultraviolet rays to the region, and a resin having a carbon-carbon double bond having a light reactivity can remain. In the case where the pressure-sensitive adhesive layer is ultraviolet-curable, the adhesiveness of the pressure-sensitive adhesive layer can be reduced by performing a process of irradiating ultraviolet rays to the pressure-sensitive adhesive layer between the (B) process and the (C) process.

[0027] The support sheet forming film has at least a thermosetting resin layer. The process of heating the support sheet forming film or the support sheet to cure the thermosetting resin layer or the adhesive sheet can be performed at an appropriate timing, for example, before the (G) process. At the stage of arranging the chip with adhesive sheet in contact with the surfaces of a plurality of support sheets, the thermosetting resin layer is already cured, and thus the deformation of the support sheet with the arrangement of the chip with adhesive sheet can be suppressed.

[0028] The support sheet-forming film can be any one of the following films.

[0029] • a film composed of a thermosetting resin layer;

[0030] • a three-layer film including a thermosetting resin layer, a resin layer having higher rigidity than the thermosetting resin layer, and a thermosetting resin layer;

[0031] • a three-layer film including a thermosetting resin layer, a metal layer having higher rigidity than the thermosetting resin layer, and a thermosetting resin layer.

[0032] In addition, the rigidity of the thermosetting resin layer after heat curing can be lower than the rigidity of the resin layer or the metal layer, or can be higher than the rigidity of the resin layer or the metal layer. Rigidity refers to the ability of an object to withstand damage to bending or twisting.

[0033] One aspect of the present disclosure relates to a semiconductor device having a mausoleum structure. That is, the semiconductor device includes a substrate, a first chip disposed on the substrate, a plurality of support sheets disposed on the substrate and around the first chip, and a chip with an adhesive sheet supported by the plurality of support sheets and disposed to cover the first chip, and the chip with the adhesive sheet includes a second chip and an adhesive sheet provided on one face of the second chip, and a shear strength of the support sheet and the chip with the adhesive sheet at 250°C is 3.2 MPa or more.

[0034] When the shear strength of the support sheet and the chip with the adhesive sheet at 250°C is 3.2 MPa or more, the chip with the adhesive sheet can be stably supported by the support sheet, and connection reliability in the semiconductor device can be ensured for a long time.

[0035] The support sheet can be any one of the following.

[0036] • composed of a cured product of a thermosetting resin composition

[0037] • a resin composition including a layer of a cured product of a thermosetting resin composition, a resin layer, and a layer of a cured product of a thermosetting resin composition;

[0038] • a resin composition including a layer of a cured product of a thermosetting resin composition, a metal layer, and a layer of a cured product of a thermosetting resin composition.

[0039] The semiconductor device of the present disclosure includes an adhesive sheet provided on one face of the second chip and sandwiched by the second chip and the plurality of support sheets. In this case, the first chip can be separated from the adhesive sheet, or can be in contact with the adhesive sheet.

[0040] Effects of the Invention

[0041] According to this disclosure, a method for manufacturing a semiconductor device having a support tomb structure is provided, which simplifies the process of fabricating a support sheet and thereby stably supports stacked semiconductor chips. Furthermore, this disclosure provides a semiconductor device having a support tomb structure. Attached Figure Description

[0042] Figure 1 This is a cross-sectional view schematically illustrating a first embodiment of a semiconductor device.

[0043] Figure 2 (a), (b) and (c) are plan views that schematically illustrate the positional relationship between the first chip and a plurality of support sheets.

[0044] Figure 3 (a) is a plan view schematically illustrating one embodiment of a laminated film for forming a support sheet. Figure 3 (b) is along Figure 3 (a) is a sectional view cut by the bb line.

[0045] Figure 4 This is a cross-sectional view schematically illustrating the process of bonding a pressure-sensitive adhesive layer to a support sheet to form a film.

[0046] Figure 5 (a), (b), (c), and (d) are schematic cross-sectional views illustrating the fabrication process of the support sheet.

[0047] Figure 6 It is a schematic cross-sectional view showing a substrate with multiple support sheets arranged around the first chip.

[0048] Figure 7 This is a schematic cross-sectional view illustrating an example of a chip with an adhesive sheet.

[0049] Figure 8 It is a schematic cross-sectional view showing the supporting tomb structure formed on the substrate.

[0050] Figure 9 This is a cross-sectional view schematically illustrating a second embodiment of a semiconductor device.

[0051] Figure 10 This is a cross-sectional view schematically illustrating another embodiment of the laminated film for forming the support sheet. Detailed Implementation

[0052] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The present disclosure is not limited to the following embodiments. In addition, in the present specification, the term "(meth)acrylic acid" refers to acrylic acid or methacrylic acid, and the term "(meth)acrylate" refers to acrylate or methacrylate corresponding thereto. The term "A or B" includes either A or B, and both A and B can be included.

[0053] In the present specification, the term "layer" includes not only a structure in which a shape is formed over the entire surface, but also a structure in which a shape is partially formed when viewed in a plan view. In addition, in the present specification, the term "step" includes not only a single step, but also a range in which the intended function of the step is achieved, even if the step cannot be clearly distinguished from other steps. In addition, a numerical range represented by "~" indicates a range in which the minimum value and the maximum value recited before and after "~" are included as minimum values and maximum values, respectively.

[0054] In the present specification, the content of each component in a composition means the total amount of a plurality of substances corresponding to each component present in the composition, unless otherwise specified. In addition, the example materials can be used alone or in combination with two or more, unless otherwise specified. In addition, in the numerical ranges described in stages in the present specification, the upper limit value or the lower limit value of the numerical range of a certain stage can be replaced with the upper limit value or the lower limit value of the numerical range of another stage. In addition, in the numerical ranges described in the present specification, the upper limit value or the lower limit value of the numerical range can be replaced with the value shown in the examples.

[0055] <First Embodiment>

[0056] (Semiconductor device)

[0057] Figure 1 is a cross-sectional view schematically showing a first embodiment of a semiconductor device. Figure 1 The semiconductor device 100 shown includes a substrate 10, a chip T1 (first chip) disposed on a surface of the substrate 10, a plurality of support chips Dc disposed on the surface of the substrate 10 and around the chip T1, a chip T2c with an adhesive sheet supported by the plurality of support chips Dc and disposed so as to cover the chip T1 (first chip), a chip T3 laminated on the chip T2, a chip T4, a plurality of wires w electrically connecting electrodes (not shown) on the surface of the substrate 10 and the chips T1 to T4, respectively, and a sealing material 50 filled in a gap between the chip T1 and the chip T2 and the like. The chip T2c with an adhesive sheet includes a chip T2 (second chip) and an adhesive sheet Tc provided on one face of the chip T2 (second chip).

[0058] In the present embodiment, the megalithic structure is constituted on the substrate 10 by the plurality of support pieces Dc and the core piece T2c with the adhesive piece. The core piece Tl is separated from the adhesive piece Tc. By appropriately setting the thickness of the support piece Dc, a space for connecting the upper surface of the core piece Tl to the lead wire w of the substrate 10 can be ensured.

[0059] The substrate 10 can be an organic substrate or a metal substrate such as a lead frame. In the substrate 10, the thickness of the substrate 10 is, for example, 90 μm to 300 μm or 90 μm to 210 μm from the viewpoint of suppressing warping of the semiconductor device 100.

[0060] The core piece Tl is, for example, a controller core piece, is bonded to the substrate 10 by the adhesive piece Tc, and is electrically connected to the substrate 10 by the lead wire w. The shape of the core piece Tl in plan view is, for example, rectangular (square or oblong). The length of one side of the core piece Tl is, for example, 5 mm or less, or 2 mm to 5 mm or 1 mm to 5 mm. The thickness of the core piece Tl is, for example, 10 μm to 150 μm, or 20 μm to 100 μm.

[0061] The core piece T2 is, for example, a memory core piece, and is bonded to the support piece Dc via the adhesive piece Tc. The core piece T2 has a size larger than that of the core piece Tl in plan view. The shape of the core piece T2 in plan view is, for example, rectangular (square or oblong). The length of one side of the core piece T2 is, for example, 20 mm or less, or 4 mm to 20 mm or 4 mm to 12 mm. The thickness of the core piece T2 is, for example, 10 μm to 170 μm, or 20 μm to 120 μm. In addition, the core piece T3 and the core piece T4 are also, for example, memory core pieces, and are bonded to the core piece T2 via the adhesive piece Tc. The length of one side of the core piece T3 and the core piece T4 can be the same as that of the core piece T2, and the thickness of the core piece T3 and the core piece T4 can be the same as that of the core piece T2.

[0062] The support piece Dc functions as a spacer that forms a space around the core piece Tl. The support piece Dc is a cured product of a thermosetting resin composition (a cured product of a film containing a thermosetting resin layer). In addition, as shown in (a) of FIG. 10, two support pieces Dc (shape: oblong) can be arranged at spaced-apart positions on both sides of the core piece Tl, as shown in (b) of FIG. 10, one support piece Dc (shape: square) can be arranged at a position corresponding to each of the corners of the core piece Tl (a total of four pieces), or as shown in (c) of FIG. 10, one support piece Dc (shape: square) can be arranged at a position corresponding to each of the corners of the core piece Tl (a total of four pieces). Figure 2 Figure 2 Figure 2 ​​As shown in (c), a support sheet Dc (rectangular shape, 4 in total) is disposed at a position corresponding to the edge of chip T1. The length of one side of the support sheet Dc when viewed from above is, for example, less than 20 mm, or 1 mm to 20 mm or 1 mm to 12 mm. The thickness (height) of the support sheet Dc is, for example, 10 μm to 180 μm, or 20 μm to 120 μm.

[0063] The shear strength of the support sheet Dc and the chip T2c with adhesive sheet at 250°C is 3.2 MPa or higher, or it can be 3.3 MPa or higher, 3.4 MPa or higher, or 3.5 MPa or higher. When the shear strength of the support sheet Dc and the chip T2c with adhesive sheet at 250°C is 3.2 MPa or higher, the support sheet Dc can stably support the chip T2c with adhesive sheet, ensuring the connection reliability in the semiconductor device for a long time. There is no particular upper limit to the shear strength of the support sheet Dc and the chip T2c with adhesive sheet at 250°C, but it can be below 10 MPa.

[0064] (Method for manufacturing the support sheet)

[0065] An example of a method for manufacturing a support sheet will be explained. Additionally, Figure 1 The support sheet Dc shown is the support sheet after the thermosetting resin composition has cured. On the other hand, the support sheet Da is the support sheet in the state before the thermosetting resin composition has fully cured (e.g., see reference). Figure 5 (b)

[0066] First, prepare Figure 3 (a) and Figure 3 The support sheet forming laminate 20 shown in (b) (hereinafter sometimes referred to as "laminated film 20") comprises a substrate film 1, a pressure-sensitive adhesive layer 2, and a support sheet forming film D having at least a thermosetting resin layer. The substrate film 1 is, for example, a polyethylene terephthalate (PET) film. The pressure-sensitive adhesive layer 2 is formed into a circular shape by means of perforation or the like (see reference). Figure 3 (a)). The pressure-sensitive adhesive layer 2 contains a UV-curable pressure-sensitive adhesive. That is, the pressure-sensitive adhesive layer 2 has the property that its adhesiveness decreases when exposed to ultraviolet light. The support sheet forming film D is formed into a circle by punching or the like, and has a smaller diameter than the pressure-sensitive adhesive layer 2 (see reference). Figure 3 (a)). The film D for forming the support sheet includes at least a thermosetting resin layer 5 comprising a thermosetting resin composition.

[0067] The thermosetting resin composition constituting the thermosetting resin layer 5 of the support piece forming film D passes through a semi-cured (B-stage) state, and can become a fully cured (C-stage) state by a subsequent curing process. In terms of easily adjusting the shear strength of the support piece to the die with adhesive at 250°C to a prescribed range at the time of forming the support piece, the thermosetting resin composition can contain an epoxy resin, a curing agent, an elastomer (e.g., an acrylic resin), and further contain an inorganic filler and a curing accelerator, etc. as needed. Details of the thermosetting resin composition constituting the thermosetting resin layer 5 of the support piece forming film D will be described later.

[0068] The thickness of the support piece forming film D can be, for example, 5 μm to 180 μm or 20 μm to 120 μm. By making the thickness of the support piece forming film within this range, a support tomb structure of a proper height with respect to the first die (e.g., a controller die) can be constructed.

[0069] In the support piece forming film D, the shear strength of the support piece Dc (cured product of the support piece forming film D) after heat pressure bonding the adhesive sheet Tc of the die with adhesive T2c to the support piece forming film D and curing the support piece forming film D at 170°C for 1 hour to the die with adhesive T2c at 250°C is 3.2 MPa or more. The shear strength of the support piece Dc (cured product of the support piece forming film D) to the die with adhesive T2c at 250°C can be 3.3 MPa or more, 3.4 MPa or more, or 3.5 MPa or more. By using a support piece formed from such a support piece forming film, the laminated semiconductor dies (dies with adhesive) can be stably supported. The upper limit of the shear strength of the support piece Dc (cured product of the support piece forming film D) to the die with adhesive T2c at 250°C is not particularly limited, and can be, for example, 10 MPa or less.

[0070] The laminated film 20 can be manufactured, for example, by joining a first laminated film having the base film 1 and the pressure-sensitive adhesive layer 2 on the surface of the base film 1 to a second laminated film having the cover film 3 and the support piece forming film D on the surface of the cover film 3 (refer to Figure 4 ). The first laminated film can be obtained by a process of forming the pressure-sensitive adhesive layer on the surface of the base film 1 by coating, and a process of processing the pressure-sensitive adhesive layer into a prescribed shape (e.g., a circular shape) by punching or the like. The second laminated film can be obtained by a process of forming the support piece forming film on the surface of the cover film 3 (e.g., a PET film or a polyethylene film) by coating, and a process of processing the support piece forming film into a prescribed shape (e.g., a circular shape) by punching or the like. When the laminated film 20 is used, the cover film 3 is peeled off at an appropriate timing.

[0071] like Figure 5 As shown in (a), the cutting ring DR is attached to the laminated film 20. That is, the cutting ring DR is attached to the pressure-sensitive adhesive layer 2 of the laminated film 20, resulting in a state where a support sheet forming film D is disposed inside the cutting ring DR. The support sheet forming film D is monolithically formed by cutting (see reference). Figure 5 (b)). Thus, multiple support sheets Da can be obtained from the support sheet forming film D. Then, ultraviolet light is irradiated onto the pressure-sensitive adhesive layer 2, causing a decrease in the adhesive force between the pressure-sensitive adhesive layer 2 and the support sheets Da. After ultraviolet irradiation, as... Figure 5 As shown in (c), the support sheets Da are separated from each other by expanding the substrate film 1. Figure 5 As shown in (d), the support sheet Da is peeled off from the pressure-sensitive adhesive layer 2 by pushing it upward with the upward clamp 42, and then picked up by suction using the suction chuck 44. Alternatively, the thermosetting resin can be cured by heating the support sheet forming film D before cutting or the support sheet Da before picking up. Appropriate curing of the support sheet Da during picking up enables excellent pick-up performance.

[0072] (Semiconductor device manufacturing method)

[0073] The manufacturing method of the semiconductor device 100 will be described. The manufacturing method of this embodiment includes the following steps (A) to (H).

[0074] (A) Preparation of laminated film 20 (refer to) Figure 4 );

[0075] (B) The process of forming multiple support sheets Da on the surface of the pressure-sensitive adhesive layer 2 by monolithizing the support sheet forming film D (refer to) Figure 5 (b));

[0076] (C) The process of picking up the support sheet Da from the pressure-sensitive adhesive layer 2 (refer to) Figure 5 (d)

[0077] (D) The process of arranging the first chip T1 on the substrate 10;

[0078] (E) The process of arranging a plurality of support sheets Da on the substrate 10 and around the first chip T1 (see reference) Figure 6 );

[0079] (F) The process of preparing a chip T2a with an adhesive sheet, wherein the chip T2a with an adhesive sheet includes a second chip T2 and an adhesive sheet Ta disposed on one side of the second chip T2 (see reference). Figure 7 );

[0080] (G) A process of constructing a megalithic structure by arranging the adhesive sheet-equipped chip T2a on the surfaces of the plurality of support pieces Dc (refer to Figure 8 ) ;

[0081] (H) A process of sealing the gap between the chip T1 and the chip T2 and the like with the sealing material 50 (refer to Figure 1 ).

[0082] (A) to (C) are processes of manufacturing the plurality of support pieces Da, which have been described. (D) to (H) are processes of constructing a megalithic structure on the substrate 10 using the plurality of support pieces Da. Hereinafter, (D) to (H) will be described with reference to Figure 6 to Figure 8

[0083] [(D) Process]

[0084] (D) is a process of arranging the first chip T1 on the substrate 10. For example, first, the chip T1 is arranged at a prescribed position on the substrate 10 via the adhesive layer T1c. Then, the chip T1 is electrically connected to the substrate 10 by the wire w.

[0085] [(E) Process]

[0086] (E) is a process of arranging the plurality of support pieces Da on the substrate 10 and around the first chip T1. The structure 30 shown in FIG. 1 is manufactured through the process. The structure 30 includes the substrate 10, the chip T1 arranged on the surface of the substrate 10, and the plurality of support pieces Da. The arrangement of the support pieces Da can be performed by a press bonding process. The press bonding process is preferably performed at 80°C to 180°C and 0.01 MPa to 0.50 MPa for 0.5 seconds to 3.0 seconds, for example. In addition, the support pieces Da can or can not be completely cured at the time of the (E) process. It is preferable that the support pieces Da be completely cured to become the support pieces Dc at the time before the start of the (G) process. Figure 6

[0087] [(F) Process]

[0088] (F) is a process of preparing the adhesive sheet-equipped chip T2a shown in FIG. 2. The adhesive sheet-equipped chip T2a includes the chip T2 and the adhesive sheet Ta provided on one surface of the chip T2. The adhesive sheet-equipped chip T2a can be obtained by a dicing process and a pick-up process using a semiconductor wafer and a dicing die-bonding integrated film, for example. Figure 7

[0089] [(G) Process]

[0090] ​​​(G) The process is a process of arranging the chip T2a with the adhesive sheet on the upper side of the chip Tl in a manner that the adhesive sheet Ta is in contact with the upper surface of the plurality of support sheets Dc. Specifically, the chip T2 is press-bonded to the upper surface of the support sheet Dc via the adhesive sheet Ta. The press-bonding process is preferably performed at 80°C to 180°C and 0.01 MPa to 0.50 MPa for 0.5 seconds to 3.0 seconds, for example. Subsequently, the adhesive sheet Ta is cured by heating. The curing process is preferably performed at 60°C to 175°C and 0.01 MPa to 1.0 MPa for 5 minutes or more, for example. Thus, the adhesive sheet Ta is cured to become the adhesive sheet Tc. Through this process, the megalithic structure is constructed on the substrate 10 (refer to Figure 8 ).

[0091] After the (G) process and before the (H) process, the chip T3 is arranged on the chip T2 via an adhesive sheet, and further, the chip T4 is arranged on the chip T3 via an adhesive sheet. The adhesive sheet is a thermosetting resin composition similar to the adhesive sheet Ta described above, and is cured by heating to become the adhesive sheet Tc (refer to Figure 1 ). On the other hand, the chips T2, T3, and T4 are electrically connected to the substrate 10 by the wires w, respectively. Note that the number of chips stacked above the chip Tl is not limited to three in the present embodiment, and can be appropriately set.

[0092] [(H) Process]

[0093] The (H) process is a process of sealing the gap between the chip Tl and the chip T2 and the like with the sealing material 50. Through this process, the semiconductor device 100 shown in FIG. 1 is completed. Figure 1

[0094] (Thermosetting resin composition constituting thermosetting resin layer)

[0095] The support sheet-forming film D has at least the thermosetting resin layer 5. As described above, from the viewpoint of easily adjusting the shear strength of the support sheet and the chip with the adhesive sheet at 250°C to a prescribed range at the time of forming the support sheet, the thermosetting resin composition constituting the thermosetting resin layer 5 of the support sheet-forming film D contains an epoxy resin, a curing agent, and an elastomer, and can further contain an inorganic filler and a curing accelerator, as necessary. According to the research by the present inventors and the like, it is preferable that the support sheet Da and the cured support sheet Dc have the following properties.

[0096] • Property 1: The adhesive strength of the adhesive sheet Tc of the chip T2c with the adhesive sheet is sufficiently high;

[0097] ​• Property 2: Position deviation is not easily caused when thermally pressing the support sheet Da at a prescribed position of the substrate 10 (the melt viscosity (shear viscosity) of the adhesive sheet 5p at 120°C is, for example, 4,300 Pa-s to 50,000 Pa-s or 5,000 Pa-s to 40,000 Pa-s);

[0098] • Property 3: The adhesive sheet 5c exhibits stress relaxation properties within the semiconductor device 100 (the thermosetting resin composition contains an elastomer (rubber component));

[0099] • Property 4: The shrinkage rate accompanying curing is sufficiently small;

[0100] • Property 5: The visibility of the support sheet Da based on a camera is good in the pickup process (the thermosetting resin composition contains, for example, a colorant);

[0101] • Property 6: The adhesive sheet 5c has sufficient mechanical strength.

[0102] [Epoxy Resin]

[0103] The epoxy resin, if it is a substance that has an adhesive action when curing, is not particularly limited. A difunctional epoxy resin such as a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type epoxy resin, and the like; a novolak type epoxy resin such as a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, and the like; and the like can be used. Furthermore, a generally known resin such as a multifunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocycle-containing epoxy resin, an alicyclic epoxy resin, and the like can be used. One of these can be used alone, or two or more of these can be used simultaneously.

[0104] [Curing Agent]

[0105] As the curing agent, for example, a phenol resin, an ester compound, an aromatic amine, an aliphatic amine, an acid anhydride, and the like can be exemplified. Among them, from the viewpoint of achieving high shear strength (grain shear strength), a phenol resin is preferred. As a commercial product of the phenol resin, for example, LF-4871 (trade name, BPA novolak type phenol resin) manufactured by DIC Corporation, HE-100C-30 (trade name, phenyl aralkyl type phenol resin) manufactured by AIR WATER INC., Phenolite KA and TD series manufactured by DIC Corporation, Milex XLC-series and XL series (for example, Milex XLC-LL) manufactured by Mitsui Chemicals, Inc., HE series (for example, HE100C-30) manufactured by AIR WATER INC., MEHC-7800 series (for example, MEHC-7800-4S) manufactured by Meiwa Plastic Industries, Ltd., JDPP series manufactured by JEF Chemical Corporation, PSM series (for example, PSM-4326) manufactured by Gun Ei Chemical Industry Co., Ltd., and the like can be exemplified. These can be used alone one kind, or two or more kinds can be used at the same time.

[0106] Regarding the blending amount of the epoxy resin and the phenol resin, from the viewpoint of achieving high shear strength (grain shear strength), the equivalent ratio of the equivalent weight of the epoxy to the equivalent weight of the hydroxyl group is preferably 0.6 to 1.5, more preferably 0.7 to 1.4, and further preferably 0.8 to 1.3, respectively. By making the blending ratio within the above range, it is easy to achieve both the curing property and the fluidity at a sufficiently high level.

[0107] [elastomer]

[0108] As the elastomer, for example, an acrylic resin, a polyester resin, a polyamide resin, a polyimide resin, a silicone resin, a polybutadiene, an acrylonitrile, an epoxy-modified polybutadiene, a maleic anhydride-modified polybutadiene, a phenol-modified polybutadiene, a carboxyl-modified acrylonitrile, and the like can be exemplified.

[0109] From the viewpoint of achieving high shear strength (grain shear strength), the elastomer is preferably an acrylic resin, and further, more preferably an epoxy group-containing (meth) acrylic copolymer or the like obtained by polymerizing a functional monomer having an epoxy group or a glycidyl group as a crosslinkable functional group such as glycidyl acrylate or glycidyl methacrylate. Among the acrylic resins, an epoxy group-containing (meth) acrylic ester copolymer and an epoxy group-containing acrylic rubber are preferred, and an epoxy group-containing acrylic rubber is more preferred. The epoxy group-containing acrylic rubber is a rubber having an epoxy group, which is mainly composed of a copolymer of butyl acrylate and acrylonitrile or the like, a copolymer of ethyl acrylate and acrylonitrile or the like, and the like. In addition, the acrylic resin can have not only an epoxy group but also an alcoholic or phenolic hydroxyl group, a carboxyl group, or the like as a crosslinkable functional group.

[0110] As commercially available products of the acrylic resin, for example, SG-70L, SG-70 8-6, WS-023 EK30, SG-280 EK23, SG-P3 solvent-modified product (trade name, acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent: cyclohexanone), and the like manufactured by Nagase Chemtex Corporation can be listed.

[0111] From the viewpoint of achieving high shear strength (grain shear strength), the glass transition temperature (Tg) of the acrylic resin is preferably -50°C to 50°C, and more preferably -30°C to 30°C. From the viewpoint of achieving high shear strength (grain shear strength), the weight average molecular weight (Mw) of the acrylic resin is preferably 1,000,000 to 30,000,000, and more preferably 5,000,000 to 20,000,000. Here, the Mw is a value obtained by measuring by gel permeation chromatography (GPC) and converting using a standard curve based on a standard polystyrene. In addition, by using an acrylic resin having a narrow molecular weight distribution, there is a tendency that a high-elasticity adhesive sheet can be formed.

[0112] From the viewpoint of achieving high shear strength (grain shear strength), the amount of the acrylic resin contained in the thermosetting resin composition is preferably 10 parts by mass to 200 parts by mass, and more preferably 20 parts by mass to 100 parts by mass, relative to 100 parts by mass of the total of the epoxy resin and the epoxy resin curing agent.

[0113] [Inorganic Filler]

[0114] As the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica, or the like can be listed. These can be used alone or two or more can be used simultaneously.

[0115] The average particle diameter of the inorganic filler is preferably 0.005 to 1.0 μm, more preferably 0.05 to 0.5 μm, from the viewpoint of achieving high shear strength (grain shear strength). The surface of the inorganic filler is preferably chemically modified from the viewpoint of achieving high shear strength (grain shear strength). As a material for chemically modifying the surface, for example, a silane coupling agent or the like can be mentioned. As the kind of functional group of the silane coupling agent, for example, a vinyl group, an acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, an ethoxy group, or the like can be mentioned.

[0116] The content of the inorganic filler is preferably 20 to 200 parts by mass, more preferably 30 to 100 parts by mass, relative to 100 parts by mass of the resin component of the thermosetting resin composition, from the viewpoint of achieving high shear strength (grain shear strength).

[0117] [Curing Accelerator]

[0118] As the curing accelerator, for example, an imidazole-based compound, an organic phosphorus-based compound, a secondary amine-based compound, a tertiary amine-based compound, a quaternary ammonium salt, or the like can be mentioned. From the viewpoint of achieving high shear strength (grain shear strength), an imidazole-based compound is preferred. As the imidazole-based compound, for example, 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, or the like can be mentioned. These can be used singly or two or more kinds can be used simultaneously.

[0119] The content of the curing accelerator of the thermosetting resin composition is preferably 0.04 to 3 parts by mass, more preferably 0.04 to 0.2 parts by mass, relative to 100 parts by mass of the total of the epoxy resin and the epoxy resin curing agent, from the viewpoint of achieving high shear strength (grain shear strength).

[0120] <Second Embodiment>

[0121] Figure 9 is a cross-sectional view schematically showing the second embodiment of the semiconductor device. The semiconductor device 100 according to the first embodiment is in a state where the chip T1 is separated from the adhesive sheet Tc, in contrast to this, the semiconductor device 200 according to the present embodiment is in a state where the chip T1 is in contact with the adhesive sheet Tc. That is, the adhesive sheet Tc is in contact with the upper surface of the chip T1 and the upper surface of the support sheet Dc. For example, by appropriately setting the thickness of the support sheet-forming film D, it is possible to make the position of the upper surface of the chip T1 coincide with the position of the upper surface of the support sheet Dc.

[0122] In the semiconductor device 200, the chip T1 is not connected by wire bonding with respect to the substrate 10, but is connected by flip chip. In addition, even in a form in which the chip T1 is wire-bonded to the substrate 10, the chip T1 can be in a state of being in contact with the adhesive sheet Tc, as long as it is provided in the adhesive sheet Ta constituting the chip T2a of the adhesive sheet with chip T2.

[0123] In the above-described embodiment, as illustrated in (b) of Figure 3 The support sheet forming laminate 20A illustrated in (b) of Figure 10 The support sheet forming laminate 20A illustrated in (b) of

[0124] The support sheet forming laminate 20A can be manufactured, for example, by the following steps.

[0125] • a step of preparing a laminate sequentially provided with a base material film 1, a pressure-sensitive adhesive layer 2, and a thermosetting resin layer 5;

[0126] • a step of adhering a resin layer 6 or a metal layer having higher rigidity than the thermosetting resin layer 5 to a surface of the laminate;

[0127] • a step of adhering a thermosetting resin layer 5 to a surface of the resin layer 6 or the metal layer.

[0128] Example

[0129] Hereinafter, the present disclosure will be described by way of examples, but the present application is not limited to these examples.

[0130] [Manufacture of support sheet forming film]

[0131] Preparation of varnish

[0132] The materials shown in Table 1 were used in the composition ratios (unit: mass parts) shown in Table 1. Cyclohexanone was added to the epoxy resin, the phenol resin, and the inorganic filler, and they were mixed by stirring. The content of the cyclohexanone was adjusted so that the proportion of the solid content in the finally obtained varnish was 40 mass%. An elastomer was added thereto, and a coupling agent and a curing accelerator were further added, and the mixture was stirred until the components were uniform, thereby preparing the varnishes A to C.

[0133] Details of each component shown in Table 1 are as described below.

[0134] • Epoxy resin: YDCN-700-10 (trade name, manufactured by NIPPON STEEL & SUMIKIN CHEMICAL CO., LTD., o-cresol novolak type epoxy resin, epoxy equivalent: 209 g / eq)

[0135] • Phenol resin (curing agent): HE-100C-30 (trade name, manufactured by AIR WATER INC., phenol aralkyl type phenol resin, hydroxyl equivalent: 170 g / eq)

[0136] • Phenol resin (curing agent): PSM-4326 (trade name, manufactured by Gun Ei Chemical Industry Co., Ltd., phenol novolak type phenol resin, hydroxyl equivalent: 105 g / eq)

[0137] • Inorganic filler: Aerosil R972 (trade name, manufactured by NIPPON AEROSIL CO., LTD., silicon dioxide, average particle diameter 0.016 μm)

[0138] • Inorganic filler: SC2050-HLG (trade name, manufactured by Admatechs Company Limited, silicon dioxide filler dispersion liquid, average particle diameter 0.50 μm)

[0139] • Elastomer: SG-P3 solvent changed product (trade name, manufactured by Nagase Chemtex Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent: cyclohexanone)

[0140] • Coupling agent: A-189 (trade name, manufactured by Momentive Performance Materials Inc., γ-mercaptopropyltrimethoxysilane)

[0141] • Coupling agent: A-1160 (trade name, manufactured by Momentive Performance Materials Inc., γ-ureidopropyltriethoxysilane)

[0142] • Curing accelerator: Curezol 2PZ-CN (trade name, manufactured by SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole)

[0143] [Table 1]

[0144]

[0145] <Production of a support sheet-forming film>

[0146] (Production Example 1)

[0147] The varnish A was filtered with a 100-μm filter and vacuum-deaerated. As a base film, a polyethylene terephthalate (PET) film having a thickness of 38 μm on which a release treatment was performed was prepared, and the vacuum-deaerated varnish A was applied to the PET film. The applied varnish A was subjected to two-stage heat drying at 90°C for 5 minutes and then at 130°C for 5 minutes, and a support sheet-forming film of Production Example 1 in a B-stage state was obtained. The application amount of the varnish A was adjusted to a thickness of 50 μm.

[0148] (Production Example 2)

[0149] The varnish A was changed to the varnish B, and otherwise, a support sheet-forming film of Production Example 2 was obtained in the same manner as in Production Example 1.

[0150] (Production Example 3)

[0151] The varnish A was changed to the varnish C, and otherwise, a support sheet-forming film of Production Example 3 was obtained in the same manner as in Production Example 1.

[0152] [Measurement of Shear Viscosity]

[0153] <Manufacture of Chip with Adhesive Sheet>

[0154] A dicing die-bonding integrated adhesive film (film-shaped adhesive: thickness 50 μm, pressure-sensitive adhesive film: thickness 110 μm, manufactured by Showa Denko Materials co., Ltd.) having a film-shaped adhesive and a pressure-sensitive adhesive film, and a silicon wafer having a thickness of 400 μm were prepared. The silicon wafer was laminated on the film-shaped adhesive of the dicing die-bonding integrated adhesive film at a stage temperature of 70°C, and thereby a dicing sample was manufactured.

[0155] The obtained dicing sample was cut using a full-automatic dicing machine DFD-6361 (manufactured by DISCO CORPORATION). The cutting was performed in a step-cutting manner using two blades, and cutting blades ZH05-SD3500-N1-xx-DD and ZH05-SD4000-N1-xx-BB (both manufactured by DISCO CORPORATION) were used. The cutting conditions were blade rotation speed 4000 rpm, cutting speed 50 mm / sec, and chip size 5 mm x 5 mm. The cutting was performed in such a manner that the first-stage cutting was performed with the silicon wafer remaining by about 200 μm, and then the second-stage cutting was performed in such a manner that a notch of about 20 μm was formed on the pressure-sensitive adhesive film. Then, the chip was picked up using a pickup chuck, and thereby a chip with an adhesive sheet was obtained.

[0156] <Manufacture of Evaluation Sample>

[0157] (Example 1)

[0158] A solder resist substrate (TAIYO HOLDINGS CO., LTD., trade name: AUS-308) and the support sheet-forming film of Production Example 1 were prepared, and the solder resist substrate was laminated to the support sheet-forming film of Production Example 1 at a stage temperature of 70°C. Next, the above-mentioned prepared chip with an adhesive sheet was prepared, and the chip with an adhesive sheet was disposed on the support sheet-forming film of Production Example 1 with the adhesive sheet side of the chip with an adhesive sheet, and heat pressure bonding was performed. The heat pressure bonding conditions were a temperature of 120°C, a time of 1 second, and a pressure of 0.1 MPa. Next, the sample obtained by heat pressure bonding was placed in a drying machine, and cured at 170°C for 1 hour, and the evaluation sample of Example 1 was prepared.

[0159] (Example 2)

[0160] The evaluation sample of Example 2 was prepared in the same manner as in Example 1, except that the support sheet-forming film of Production Example 1 was changed to the support sheet-forming film of Production Example 2.

[0161] (Example 3)

[0162] The evaluation sample of Example 3 was prepared in the same manner as in Example 1, except that the support sheet-forming film of Production Example 1 was changed to the support sheet-forming film of Production Example 3.

[0163] (Comparative Example 1)

[0164] A solder resist substrate (TAIYO HOLDINGS CO., LTD., trade name: AUS-308) and a silicon wafer with an adhesive layer were prepared, and the solder resist substrate was laminated to the adhesive layer of the silicon wafer with an adhesive layer at a stage temperature of 70°C. Next, the above-mentioned prepared chip with an adhesive sheet was prepared, and the chip with an adhesive sheet was disposed on the silicon wafer with the adhesive sheet side of the chip with an adhesive sheet, and heat pressure bonding was performed. The heat pressure bonding conditions were a temperature of 120°C, a time of 1 second, and a pressure of 0.1 MPa. Next, the sample obtained by heat pressure bonding was placed in a drying machine, and cured at 170°C for 1 hour, and the evaluation sample of Comparative Example 1 was prepared.

[0165] <Shear Strength Measurement>

[0166] The evaluation samples of Examples 1 to 3 and Comparative Example 1 were used to measure the shear strength, respectively. A universal adhesive strength tester (Bond Tester) (manufactured by nordson-advanced-technology (Japan) K.K.) was used to measure the shear strength of the support sheet and the chip with an adhesive sheet at 250°C by hooking and pulling the chip of the chip with an adhesive sheet in the evaluation sample. The results are shown in Table 2.

[0167] [Table 2]

[0168] Example 1 Example 2 Example 3 Comparative Example 1 Type of support sheet Production Example 1 Production Example 2 Production Example 3 Silicon wafer Shear strength (230°C, MPa) 3.6 3.8 3.5 3.0

[0169] As shown in Table 2, the evaluation samples of Examples 1 to 3 are excellent in shear strength as compared with the evaluation sample of Comparative Example 1. The above shows that the support stability of the semiconductor chip with the adhesive sheet laminated on the support sheet is excellent.

[0170] Industrial applicability

[0171] According to the present disclosure, there is provided a semiconductor device manufacturing method capable of simplifying the process of producing a support sheet and further stably supporting a laminated semiconductor chip in a semiconductor device manufacturing process having a dolmen structure. Furthermore, the present disclosure provides a semiconductor device having a dolmen structure.

[0172] Explanation of symbols

[0173] 1 - base material film, 2 - pressure-sensitive adhesive layer, 5 - thermosetting resin layer, 6 - resin layer, 10 - substrate, 20, 20A - support sheet forming laminated film, 50 - sealing material, 100, 200 - semiconductor device, D - support sheet forming film, D2 - three-layer film (support sheet forming film), Da - support sheet, Dc - support sheet (cured product), T1 - first chip, T2 - second chip, T2a - chip with adhesive sheet, T2c - chip with adhesive sheet (cured product), Ta - adhesive sheet, Tc - adhesive sheet (cured product).

Claims

1. A method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device having a dolmen structure, the semiconductor device comprising: A substrate; a first chip disposed on the substrate; a plurality of support pieces disposed on the substrate and around the first chip; and a chip with an adhesive sheet supported by the plurality of support pieces and disposed so as to cover the first chip, the chip with an adhesive sheet including a second chip and an adhesive sheet provided on one face of the second chip, a manufacturing method of a semiconductor device having a megalithic structure, including: (A) a step of preparing a laminated film having a base material film, a pressure-sensitive adhesive layer, and a support piece forming film having at least a thermosetting resin layer in this order; (B) a step of forming a plurality of support pieces on a surface of the pressure-sensitive adhesive layer by singulating the support piece forming film; (C) a step of picking up the support pieces from the pressure-sensitive adhesive layer; (D) a step of disposing a first chip on a substrate; (E) a step of disposing a plurality of the support pieces on the substrate and around the first chip; (F) a step of preparing a chip with an adhesive sheet having a second chip and an adhesive sheet provided on one face of the second chip; and (G) a step of constructing a megalithic structure by disposing the chip with an adhesive sheet on surfaces of the plurality of support pieces, the adhesive sheet of the chip with an adhesive sheet is thermocompression-bonded to the support piece forming film, and a shear strength at 250°C of a cured product of the support piece forming film after the support piece forming film and the adhesive sheet are cured at 170°C for 1 hour and a cured product of the adhesive sheet is 3.2 MPa or more.

2. The manufacturing method of a semiconductor device according to claim 1, wherein the support piece forming film is a film composed of a thermosetting resin layer or a three-layer film including a first thermosetting resin layer, a second thermosetting resin layer, and a resin layer or a metal layer disposed between the first thermosetting resin layer and the second thermosetting resin layer and having higher rigidity than the first thermosetting resin layer and the second thermosetting resin layer.

3. A semiconductor device having a megalithic structure manufactured by the manufacturing method of a semiconductor device according to claim 1 or 2, including: a substrate; a first chip disposed on the substrate; a plurality of support pieces disposed on the substrate and around the first chip; and a chip with an adhesive sheet supported by the plurality of support pieces and disposed so as to cover the first chip, the chip with an adhesive sheet including a second chip and an adhesive sheet provided on one face of the second chip, the support pieces being formed from a support piece forming film, the support piece forming film being a film obtained by thermocompression-bonding the adhesive sheet of the chip with an adhesive sheet to the support piece forming film, and a shear strength at 250°C of a cured product of the support piece forming film after the support piece forming film and the adhesive sheet are cured at 170°C for 1 hour and a cured product of the adhesive sheet being 3.2 MPa or more.

4. The semiconductor device according to claim 3, wherein The support sheet is a structure in which a first layer of a cured product of a thermosetting resin composition, a resin layer or a metal layer, and a second layer of the cured product are sequentially stacked. The support sheet is a structure in which a first layer of a cured product of a thermosetting resin composition, a resin layer or a metal layer, and a second layer of the cured product are sequentially stacked.

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