Semiconductor device with a monument structure and method of manufacturing the same, and laminated film for support sheet formation and method of manufacturing the same

Abstract

The support sheet forming laminated film of the present application sequentially has a base material film, a pressure-sensitive adhesive layer, and a support sheet forming film, and the support sheet forming film has a multilayer structure including at least a resin layer having a tensile elastic modulus of 8.0 MPa or more. The support sheet forming laminated film is suitable for a manufacturing process of a semiconductor device having a dolmen structure, the semiconductor device including a substrate, a first chip disposed on the substrate, a plurality of support sheets disposed on the substrate and around the first chip, and a second chip supported by the plurality of support sheets and disposed so as to cover the first chip.

Description

TECHNICAL FIELD

[0001] The present application relates to a semiconductor device having a dolmen structure, including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed on the substrate and around the first chip, and a second chip supported by the plurality of support pieces and disposed so as to cover the first chip. Also, the present application relates to a manufacturing method of a semiconductor device having a dolmen structure, and a support piece forming laminated film and a manufacturing method thereof. In addition, a dolmen is a kind of stone tomb, which has a plurality of support stones and a plate-shaped rock placed thereon. In the semiconductor device having a dolmen structure, the support pieces correspond to "support stones", and the second chip corresponds to "a plate-shaped rock". BACKGROUND

[0002] In recent years, in the field of semiconductor devices, high integration, miniaturization, and high speed are required. As one way of semiconductor devices, a structure in which a semiconductor chip is stacked on a controller chip disposed on a substrate has attracted attention. For example, Patent Literature 1 discloses a semiconductor die assembly including a controller die, and a memory die supported by a support member on the controller die. The semiconductor die assembly of Patent Literature 1 has a dolmen structure. That is, the semiconductor die assembly includes a package substrate, a controller die disposed on a surface of the package substrate, a memory die disposed above the controller die, and a support member supporting the memory die. Figure 1 The semiconductor assembly 100 illustrated in FIG. A can be said to have a dolmen structure. That is, the semiconductor assembly 100 includes a package substrate 102, a controller die 103 disposed on a surface of the package substrate 102, a memory die 106a disposed above the controller die 103, a memory die 106b, and a support member 130a, a support member 130b supporting the memory die 106a.

[0003] Prior Art Documents

[0004] Patent Literature

[0005] Patent Literature 1: Japanese Patent Publication No. 2017-515306 SUMMARY

[0006] Technical Problem to be Solved by the Invention

[0007] Patent Literature 1 discloses that, as a support member (support piece), a semiconductor material such as silicon can be used, and more specifically, a fragment of a semiconductor material obtained by cutting a semiconductor wafer can be used (see

[0012] ,

[0014] , and

[0016] of Patent Literature 1). In order to manufacture a support piece for a dolmen structure using a semiconductor wafer, like the manufacture of a general semiconductor chip, for example, each of the following processes is required. Figure 2 ) In order to manufacture a support piece for a dolmen structure using a semiconductor wafer, like the manufacture of a general semiconductor chip, for example, each of the following processes is required.

[0008] (1) A process of attaching a back grind tape to a semiconductor wafer;

[0009] (2) a process of grinding the back surface of the semiconductor wafer;

[0010] (3) a process of attaching a film (dicing / die-bonding integrated film) having a pressure-sensitive adhesive layer and an adhesive layer to the dicing ring and the semiconductor wafer with the ground back surface disposed therein;

[0011] (4) a process of peeling the back surface grinding tape from the semiconductor wafer;

[0012] (5) a process of singulating the semiconductor wafer;

[0013] (6) a process of picking up a support sheet including a laminated body of a semiconductor chip and an adhesive sheet from the pressure-sensitive adhesive layer;

[0014] (7) a process of pressure-bonding a plurality of support sheets to a prescribed position of a substrate.

[0015] The present application provides a manufacturing method of a semiconductor device, which can simplify a process of producing a support sheet and can achieve excellent pickability of the support sheet in a manufacturing process of a semiconductor device having a dolmen structure. Also, the present application provides a semiconductor device having a dolmen structure, a support sheet forming laminated film, and a manufacturing method thereof.

[0016] Means for solving technical problems

[0017] One aspect of the present application relates to a manufacturing method of a semiconductor device having a dolmen structure. The manufacturing method includes the following processes.

[0018] (A) a process of preparing a laminated film having a base material film, a pressure-sensitive adhesive layer, and a support sheet forming film in this order;

[0019] (B) a process of forming a plurality of support sheets on a surface of the pressure-sensitive adhesive layer by singulating the support sheet forming film;

[0020] (C) a process of picking up the support sheet from the pressure-sensitive adhesive layer;

[0021] (D) a process of disposing a first chip on a substrate;

[0022] (E) a process of disposing a plurality of support sheets on the substrate and around the first chip or around a region where the first chip is to be disposed;

[0023] (F) a process of preparing a chip with an adhesive sheet having a second chip and an adhesive sheet provided on one face of the second chip;

[0024] (G) a process of constructing a dolmen structure by disposing the chip with the adhesive sheet on surfaces of the plurality of support sheets.

[0025] The support sheet-forming film has a multilayer structure including at least a resin layer having a tensile elastic modulus of 8.0 MPa or more. By making the tensile elastic modulus of the resin layer of the support sheet-forming film 8.0 MPa or more, excellent pickability of the support sheet obtained by singulating the support sheet-forming film can be achieved. The support sheet-forming film can include, in addition to the resin layer, a thermosetting resin layer composed of a material different from that of the resin layer, for example. In the present application, the tensile elastic modulus refers to a value measured under the following conditions according to the method described in Japanese Industrial Standards (JIS) K7127: 1999 (Plastics - Determination of tensile properties - Part 3: test conditions for films and sheets).

[0026] • Test piece size: 10 mm x 40 mm

[0027] • Chuck interval: 30 mm

[0028] • Tensile speed: 300 mm / min

[0029] Either the (D) step or the (E) step can be performed first. In the case where the (D) step is performed first, in the (E) step, it is only necessary to arrange a plurality of support sheets on the substrate and around the first chip. On the other hand, in the case where the (E) step is performed first, in the (E) step, a plurality of support sheets are arranged on the substrate and around the region where the first chip is to be arranged, and then, in the (D) step, the first chip is arranged in the region.

[0030] In the above manufacturing method of the present application, a support sheet obtained by singulating a support sheet-forming film is used. Thus, compared to the conventional manufacturing method in which a fragment of a semiconductor material obtained by cutting a semiconductor wafer is used as a support sheet, the process of making a support sheet can be simplified. That is, in the conventional method, the above (1) to (7) processes are required, in contrast, the support sheet-forming film does not include a semiconductor wafer, so the processes of (1), (2), and (4) related to backgrinding of the semiconductor wafer can be omitted. Also, since a semiconductor wafer, which is more expensive than a resin material, is not used, cost reduction is also achieved.

[0031] (A) The pressure-sensitive adhesive layer of the laminated film prepared in the process can be either pressure-sensitive or ultraviolet-curable. That is, the pressure-sensitive adhesive layer can be cured by ultraviolet irradiation or can not be cured by ultraviolet irradiation, in other words, can or can not contain a resin having a carbon-carbon double bond having photo-reactivity. In addition, the pressure-sensitive adhesive layer of the pressure-sensitive type can also contain a resin having a carbon-carbon double bond having photo-reactivity. For example, the pressure-sensitive adhesive layer can be reduced in adhesiveness by irradiating a prescribed region thereof with ultraviolet rays, and, for example, a resin having a carbon-carbon double bond having photo-reactivity can remain. In the case where the pressure-sensitive adhesive layer is ultraviolet-curable, the adhesiveness of the pressure-sensitive adhesive layer can be reduced by performing a process of irradiating the pressure-sensitive adhesive layer with ultraviolet rays between the (B) process and the (C) process.

[0032] In the case where the support sheet-forming film contains a thermosetting resin layer, a process of heating the support sheet-forming film or the support sheet to cure the thermosetting resin layer or the adhesive sheet can be performed at an appropriate timing, for example, before the (G) process. At the stage of arranging the chip with the adhesive sheet in contact with the surfaces of the plurality of support sheets, the thermosetting resin layer has already been cured, whereby deformation of the support sheets with the arrangement of the chip with the adhesive sheet can be suppressed. In addition, since the thermosetting resin layer has adhesiveness with respect to other members (for example, a substrate), an adhesive layer or the like can not be separately provided on the support sheet.

[0033] One aspect of the present application relates to a semiconductor device having a dolmen structure. That is, the semiconductor device has a dolmen structure, and the semiconductor device includes a substrate, a first chip arranged on the substrate, a plurality of support sheets arranged on the substrate and around the first chip, and a second chip supported by the plurality of support sheets and arranged so as to cover the first chip, and the support sheets have a multilayer structure including at least a resin sheet having a tensile elastic modulus of 8.0 MPa or more.

[0034] The above-described semiconductor device of the present application can further include an adhesive sheet provided on one face of the second chip and sandwiched by the second chip and the plurality of support sheets. In this case, the above-described first chip can be separated from the adhesive sheet or can be in contact with the adhesive sheet. The adhesive sheet is provided, for example, so as to cover at least a region of the second chip opposite the first chip. The adhesive sheet can extend continuously from the above-described region of the second chip to the periphery side of the second chip and be sandwiched by the second chip and the plurality of support sheets. That is, one adhesive sheet can cover the above-described region of the second chip and adhere the second chip and the plurality of support sheets.

[0035] One aspect of the present application relates to a support sheet forming laminate. The laminate has, in order, a base film, a pressure-sensitive adhesive layer, and a support sheet forming film, and the support sheet forming film has a multilayer structure including at least a resin layer having a tensile elastic modulus of 8.0 MPa or more. The resin layer is, for example, a polyimide layer. The support sheet forming film can include, in addition to the resin layer, a thermosetting resin layer composed of a different material from the resin layer. By providing the support sheet forming film with a plurality of layers formed of mutually different materials, each layer can be made to share a function, and, for example, high functionality of the film can be achieved compared to a case where the film is composed of a plurality of layers of the same material. By singulating the film of the multilayer structure, a support sheet suitable for a megalithic structure can be obtained. The support sheet includes a resin sheet (singulated from the resin layer) and an adhesive sheet (singulated from the thermosetting resin layer) provided on one face of the resin sheet, and the resin sheet is composed of a different material from the adhesive sheet. The support sheet can also include a three-layer structure of the resin sheet and a pair of adhesive sheets sandwiching the resin sheet, and the resin sheet is composed of a different material from the pair of adhesive sheets.

[0036] The support sheet forming film described above has a thickness of, for example, 5 μm to 180 μm. By making the thickness of the support sheet forming film within this range, a megalithic structure of an appropriate height with respect to a first chip (for example, a controller chip) can be constructed. The support sheet forming film can include a thermosetting resin layer. The thermosetting resin layer contains, for example, an epoxy resin, and preferably contains an elastomer. By making the thermosetting resin layer constituting the support sheet contain an elastomer, stress within the semiconductor device can be mitigated.

[0037] One aspect of the present application relates to a method for manufacturing a support sheet forming laminate. The method includes a step of preparing a pressure-sensitive adhesive film having a base film and a pressure-sensitive adhesive layer formed on one face of the base film, and a step of laminating a support sheet forming film on the surface of the pressure-sensitive adhesive layer, and the support sheet forming film has a multilayer structure including at least a resin layer having a tensile elastic modulus of 8.0 MPa or more.

[0038] The support sheet forming laminate having a thermosetting resin layer and a resin layer can be manufactured, for example, as follows. That is, the method for manufacturing the support sheet forming laminate includes a step of preparing a laminate having, in order, a base film, a pressure-sensitive adhesive layer, and a thermosetting resin layer, and a step of bonding a resin layer having a tensile elastic modulus of 8.0 MPa or more on the surface of the thermosetting resin layer.

[0039] Effects of the Invention

[0040] According to the present invention, a method for manufacturing a semiconductor device having a support substrate structure is provided, which simplifies the process of fabricating the support substrate and achieves excellent pick-up performance of the support substrate. Furthermore, according to the present invention, a semiconductor device having a support substrate structure, a laminated film for forming the support substrate, and a method for manufacturing the same are provided. Attached Figure Description

[0041] Figure 1 This is a schematic cross-sectional view illustrating a first embodiment of the semiconductor device of the present invention.

[0042] Figure 2 (a) and Figure 2 (b) is a plan view that schematically shows an example of the positional relationship between the first chip and multiple support sheets.

[0043] Figure 3 (a) is a plan view schematically illustrating one embodiment of a laminated film for forming a support sheet. Figure 3 (b) is Figure 3 The sectional view at line bb in (a).

[0044] Figure 4 This is a cross-sectional view schematically illustrating the process of bonding a pressure-sensitive adhesive layer to a support sheet to form a film.

[0045] Figure 5 (a)~ Figure 5 (d) is a cross-sectional view schematically showing the manufacturing process of the support sheet.

[0046] Figure 6 It is a schematic cross-sectional view showing a substrate with multiple support sheets arranged around the first chip.

[0047] Figure 7 This is a schematic cross-sectional view illustrating an example of a chip with an adhesive sheet.

[0048] Figure 8 It is a schematic cross-sectional view showing the supporting tomb structure formed on the substrate.

[0049] Figure 9 This is a cross-sectional view schematically illustrating a second embodiment of the semiconductor device of the present invention.

[0050] Figure 10 This is a cross-sectional view schematically illustrating another embodiment of the laminated film for forming the support sheet. Detailed Implementation

[0051] Hereinafter, embodiments of the present application will be described in detail with reference to the drawings. The present application is not limited to the following embodiments. In addition, in the present specification, the term "(meth)acrylic acid" means acrylic acid or methacrylic acid, and the term "(meth)acrylate" means acrylate or methacrylate corresponding thereto. The term "A or B" means either A or B, and both A and B can be included.

[0052] In the present specification, the term "layer" includes not only a structure in which a shape is formed over the entire surface, but also a structure in which a shape is partially formed when viewed in a plan view. In addition, in the present specification, the term "step" includes not only a single step, but also a range in which the intended function of the step is achieved, even if the step cannot be clearly distinguished from other steps. In addition, a numerical range represented by "~" indicates a range in which the numerical values described before and after "~" are included as minimum and maximum values, respectively.

[0053] In the present specification, the content of each component in a composition means the total amount of a plurality of substances corresponding to the component, unless otherwise specified, in the case where a plurality of substances corresponding to each component is present in the composition. In addition, the example materials can be used alone or in combination with two or more, unless otherwise specified. In addition, in the numerical ranges described in stages in the present specification, the upper limit value or the lower limit value of the numerical range of a certain stage can be replaced with the upper limit value or the lower limit value of the numerical range of another stage. In addition, in the numerical ranges described in the present specification, the upper limit value or the lower limit value of the numerical range can be replaced with the value shown in the examples.

[0054] <First Embodiment>

[0055] (Semiconductor device)

[0056] Figure 1 is a schematic cross-sectional view that schematically shows a semiconductor device of the present embodiment. The semiconductor device 100 shown in the figure includes a substrate 10, a chip T1 (first chip) disposed on a surface of the substrate 10, a plurality of support chips Dc disposed on the surface of the substrate 10 and around the chip T1, a chip T2 (second chip) disposed above the chip T1, an adhesive chip Tc sandwiched by the chip T2 and the plurality of support chips Dc, a chip T3 laminated on the chip T2, a chip T4, a plurality of wires w electrically connecting electrodes (not shown) on the surface of the substrate 10 and the chips T1 to T4, respectively, and a sealing material 50 filled in a gap between the chip T1 and the chip T2 and the like.

[0057] In this embodiment, a support structure is formed on the substrate 10 by multiple support sheets Dc, a chip T2, and an adhesive sheet Tc located between the support sheets Dc and the chip T2. The chip T1 is separated from the adhesive sheet Tc. By appropriately setting the thickness of the support sheets Dc, space can be ensured for the wires w used to connect the upper surface of the chip T1 to the substrate 10. By separating the chip T1 from the adhesive sheet Tc, short circuits in the wires w connected to the chip T1 caused by the upper part of the wires w coming into contact with the chip T2 can be prevented. Furthermore, since it is not necessary to embed the wires in the adhesive sheet Tc that contacts the chip T2, it has the advantage of being able to reduce the thickness of the adhesive sheet Tc.

[0058] like Figure 1 As shown, an adhesive sheet Tc between chip T1 and chip T2 covers the region R of chip T2 opposite to chip T1, and extends continuously from region R to the periphery of chip T2. That is, one adhesive sheet Tc covers region R of chip T2 and is sandwiched between chip T2 and multiple support sheets to bond them together. Furthermore, Figure 1 The diagram shows an adhesive sheet Tc configured to cover the entirety of one side (lower surface) of the chip T2. However, since the adhesive sheet Tc may shrink during the manufacturing process of the semiconductor device 100, it is sufficient to substantially cover the entirety of one side (lower surface) of the chip T2; for example, there may be portions of the periphery of the chip T2 that are not covered by the adhesive sheet Tc. Figure 1 The lower surface of chip T2 corresponds to the back surface of the chip. In recent years, the back surface of chips has often been characterized by irregularities. By essentially covering the entire back surface of chip T2 with an adhesive sheet Tc, cracks or breaks in chip T2 can be prevented.

[0059] The substrate 10 can be an organic substrate or a metal substrate such as a lead frame. From the viewpoint of suppressing warping of the semiconductor device 100, the thickness of the substrate 10 is, for example, 90 μm to 300 μm, or 90 μm to 210 μm.

[0060] Chip T1, for example, is a controller chip, bonded to substrate 10 by adhesive sheet T1c and electrically connected to substrate 10 via wire w. When viewed from above, the shape of chip T1 is, for example, rectangular (square or elongated). The length of one side of chip T1 is, for example, less than 5 mm, but can also be 2 mm to 5 mm or 1 mm to 5 mm. The thickness of chip T1 is, for example, 10 μm to 150 μm, but can also be 20 μm to 100 μm.

[0061] Chip T2 is, for example, a memory chip, and is bonded to the support sheet Dc via an adhesive sheet Tc. Viewed from above, chip T2 is larger than chip T1. The shape of chip T2 when viewed from above is, for example, rectangular (square or elongated). The length of one side of chip T2 is, for example, less than 20 mm, but can also be 4 mm to 20 mm or 4 mm to 12 mm. The thickness of chip T2 is, for example, 10 μm to 170 μm, but can also be 20 μm to 120 μm. Additionally, chips T3 and T4 are also, for example, memory chips, bonded to chip T2 via adhesive sheets Tc. The length of one side of chips T3 and T4 only needs to be the same as that of chip T2, and the thickness of chips T3 and T4 also only needs to be the same as that of chip T2.

[0062] The support sheet Dc functions as a spacer forming a space around the chip T1. The support sheet Dc consists of two adhesive sheets 5c and a resin sheet 6p sandwiched between them. The adhesive sheets 5c contain a cured thermosetting resin composition (adhesive sheet 5p). The resin sheet 6p contains a resin (e.g., polyimide) with a tensile modulus of elasticity of 8.0 MPa or higher. The resin sheet 6p is made of a different material than the adhesive sheets 5c. By having the support sheet Dc comprise multiple layers formed of mutually different materials, each layer can share the function, achieving higher functionality compared to multiple layers composed of the same material.

[0063] In addition, such as Figure 2 As shown in (a), two support plates Dc (shape: rectangular) can be arranged at spaced positions on both sides of chip T1, or as shown in (a). Figure 2 As shown in (b), a support sheet Dc (shape: square, 4 in total) is disposed at a position corresponding to the corner of chip T1. The length of one side of the support sheet Dc when viewed from above is, for example, less than 20 mm, or 1 mm to 20 mm or 1 mm to 12 mm. The thickness (height) of the support sheet Dc is, for example, 10 μm to 180 μm, or 20 μm to 120 μm.

[0064] The ratio of the combined thickness of the two adhesive sheets 5c to the thickness of the support sheet Dc is preferably 0.1 to 0.9, more preferably 0.2 to 0.8, and even more preferably 0.2 to 0.7. With a ratio of 0.1 or higher, the adhesive sheets 5c can perform their function more effectively (e.g., supporting the chip T2 and preventing positional displacement of the resin sheet 6p). On the other hand, when the ratio is 0.9 or lower, the resin sheet 6p has sufficient thickness, thus functioning like a spring plate and achieving superior pick-up performance (see reference). Figure 5(d)). Based on these points of view, the thickness of the resin sheet 6p is, for example, 10 μm to 80 μm, or 20 μm to 60 μm. The thickness of the adhesive sheet 5c (one layer) is, for example, 5 μm to 120 μm, or 10 μm to 60 μm.

[0065] (Manufacturing method of support sheet)

[0066] An example of a method for manufacturing the support sheet will be explained. Additionally, Figure 1 The support sheet Dc shown is the support sheet after its contained adhesive sheet (thermosetting resin composition) has cured. On the other hand, the support sheet Da is the support sheet in the state before its contained adhesive sheet (thermosetting resin composition) has completely cured (for example, see reference). Figure 5 (b)

[0067] First, prepare Figure 3 (a) and Figure 3 The support sheet forming laminate 20 shown in (b) (hereinafter referred to as "laminated film 20" as appropriate). The laminate 20 includes a substrate film 1, a pressure-sensitive adhesive layer 2, and a support sheet forming film D. The substrate film 1 is, for example, a polyethylene terephthalate (PET) film. The pressure-sensitive adhesive layer 2 is formed into a circular shape by perforation or the like (see reference). Figure 3 (a)). The pressure-sensitive adhesive layer 2 is formed from a UV-curable pressure-sensitive adhesive. That is, the pressure-sensitive adhesive layer 2 has the property that its adhesiveness decreases when exposed to ultraviolet light. The support sheet forming film D is formed into a circle by punching or the like, and has a smaller diameter than the pressure-sensitive adhesive layer 2 (see reference). Figure 3 (a)). The support sheet forming film D consists of two thermosetting resin layers 5 and a resin layer 6 sandwiched between them.

[0068] The thickness of the thermosetting resin layer 5 is, for example, 5 μm to 180 μm, or 10 μm to 170 μm or 15 μm to 160 μm. The thicknesses of the two thermosetting resin layers 5 can be the same or different. The resin layer 6 is, for example, a polyimide layer. The thermosetting resin layer 5 comprises a thermosetting resin composition. The thermosetting resin composition, after passing through a semi-cured state (stage B), can become a fully cured product (stage C) through a subsequent curing treatment. The thermosetting resin composition contains epoxy resin, curing agent, elastomer (e.g., acrylic resin), and, if necessary, further contains inorganic fillers and curing accelerators, etc. The compositions of the two thermosetting resin layers 5 can be the same or different. Details of the thermosetting resin composition constituting the thermosetting resin layer 5 will be described later.

[0069] The thickness of the resin layer 6 is, for example, 5 to 100 μm, and can also be 10 to 90 μm or 20 to 80 μm. The tensile elastic modulus of the resin layer 6 is 8.0 MPa or more, and can also be 9.0 MPa or more or 10.0 MPa or more. By making the tensile elastic modulus of the resin layer 6 8.0 MPa or more, the resin sheet 6p functions like a spring plate in the process of picking up the support sheet Da (refer to (d) of Figure 5 ), and excellent pickability can be achieved. In addition, from the viewpoint of the ease of obtaining the material, the upper limit of the tensile elastic modulus of the resin layer 6 is about 15 MPa. As the material constituting the resin layer 6, for example, polyimide and polyethylene terephthalate (PET) can be cited. The resin layer 6 can be a layer containing a thermosetting resin composition or a photocurable resin composition that has been subjected to a curing treatment in such a manner that the tensile elastic modulus becomes within the above range.

[0070] The laminated film 20 can be manufactured, for example, by laminating a first laminated film having the base film 1 and the pressure-sensitive adhesive layer 2 on the surface of the base film 1 and a second laminated film having the cover film 3 and the support sheet-forming film D on the surface of the cover film 3 (refer to Figure 4 ). The first laminated film can be obtained by a process of forming the pressure-sensitive adhesive layer on the surface of the base film 1 by coating and a process of processing the pressure-sensitive adhesive layer into a prescribed shape (for example, a circular shape) by punching or the like. The second laminated film can be obtained by a process of forming the thermosetting resin layer 5 on the surface of the cover film 3 (for example, a PET film or a polyethylene film) by coating, a process of forming the resin layer 6 on the surface of the thermosetting resin layer 5, a process of forming the thermosetting resin layer 5 on the surface of the resin layer 6 by coating, and a process of processing the support sheet-forming film formed through these processes into a prescribed shape (for example, a circular shape) by punching or the like. When the laminated film 20 is used, the cover film 3 is peeled off at an appropriate timing.

[0071] As shown in (a) of Figure 5 , the cutting ring DR is attached to the laminated film 20. That is, the cutting ring DR is attached to the pressure-sensitive adhesive layer 2 of the laminated film 20 in a state in which the support sheet-forming film D is disposed on the inner side of the cutting ring DR. The support sheet-forming film D is singulated by cutting (refer to (b) of Figure 5 ). Thus, a plurality of support sheets Da can be obtained from the support sheet-forming film D. The support sheet Da is composed of two adhesive sheets 5p and the resin sheet 6p sandwiched by the two adhesive sheets 5p. Thereafter, the adhesion between the pressure-sensitive adhesive layer 2 and the support sheet Da is lowered by irradiating the pressure-sensitive adhesive layer 2 with ultraviolet rays. After the ultraviolet irradiation, as shown in (c) of Figure 5As shown in (c), the support sheets Da are separated from each other by expanding the substrate film 1. Figure 5 As shown in (d), the support sheet Da is peeled off from the pressure-sensitive adhesive layer 2 by pushing it upward with the upward clamp 42, and the support sheet Da is picked up by suction with the suction chuck 44. Alternatively, the thermosetting resin can be cured by heating the support sheet forming film D before cutting or the support sheet Da before picking up. Excellent pick-up performance can be achieved by moderately curing the support sheet Da during picking up. Preferably, the cut for monolithization is formed to the outer edge of the support sheet forming film D. The diameter of the support sheet forming film D can be, for example, 300 mm to 310 mm or 300 mm to 305 mm. The shape of the support sheet forming film D when viewed from above is not limited to... Figure 3 The circle shown in (a) can also be a rectangle (square or elongated rectangle).

[0072] The ratio of the combined thickness of the two thermosetting resin layers 5 to the thickness of the film D for forming the support sheet is preferably 0.1 to 0.9, more preferably 0.2 to 0.8, and even more preferably 0.2 to 0.7. By making this ratio 0.1 or higher, as described above, the adhesive sheet 5c can perform its function more effectively (e.g., supporting the chip T2 and preventing the resin sheet 6p from shifting position). On the other hand, when the ratio is 0.9 or lower, the resin sheet 6p has sufficient thickness, so the resin sheet 6p functions like a spring plate, achieving better pick-up performance (see reference). Figure 5 (d)). From these points of view, the thickness of resin layer 6 can be, for example, 10 μm to 80 μm, or 20 μm to 60 μm. The thickness of thermosetting resin layer 5 (one layer) can be, for example, 5 μm to 120 μm, or 10 μm to 60 μm.

[0073] (Semiconductor device manufacturing method)

[0074] The manufacturing method of the semiconductor device 100 will be described. The manufacturing method of this embodiment includes the following steps (A) to (H).

[0075] (A) Preparation of laminated film 20 (refer to) Figure 4 );

[0076] (B) The process of forming multiple support sheets Da on the surface of the pressure-sensitive adhesive layer 2 by monolithizing the support sheet forming film D (refer to) Figure 5 (b));

[0077] (C) The process of picking up the support sheet Da from the pressure-sensitive adhesive layer 2 (refer to) Figure 5 (d)

[0078] (D) a process of arranging the first chip T1 on the substrate 10;

[0079] (E) a process of arranging a plurality of support pieces Da on the substrate 10 and around the first chip T1 (refer to Figure 6 ) ;

[0080] (F) a process of preparing a chip T2a with an adhesive piece Ta provided on one face of a second chip T2, the chip T2a with the adhesive piece being prepared (refer to Figure 7 ) ;

[0081] (G) a process of constructing a dolmen structure by arranging the chip T2a with the adhesive piece on surfaces of a plurality of support pieces Dc (refer to Figure 8 ) ;

[0082] (H) a process of sealing a gap between the chip T1 and the chip T2 and the like with a sealing material 50 (refer to Figure 1 ).

[0083] (A) to (C) are processes of manufacturing a plurality of support pieces Da, and have already been described. (D) to (H) are processes of constructing a dolmen structure on the substrate 10 using the plurality of support pieces Da. Hereinafter, (D) to (H) will be described with reference to Figure 6 to Figure 8

[0084] [(D) process]

[0085] (D) is a process of arranging the first chip T1 on the substrate 10. For example, first, the chip T1 is arranged at a prescribed position on the substrate 10 via an adhesive layer T1c. Then, the chip T1 is electrically connected to the substrate 10 by a wire w. (D) can be a process performed before (E), or between (A) and (B), (B) and (C), or (C) and (E).

[0086] [(E) process]

[0087] (E) is a process of arranging a plurality of support pieces Da on the substrate 10 and around the first chip T1. The plurality of support pieces Da are manufactured through this process Figure 6 ​The structure 30 shown includes a substrate 10, a chip T1 disposed on the surface of the substrate 10, and a plurality of support sheets Da. The support sheets Da are disposed by a pressing process. The pressing process is preferably performed for 0.5 seconds to 3.0 seconds at a temperature of 80°C to 180°C and a pressure of 0.01 MPa to 0.50 MPa. Furthermore, regarding the support sheet Da, the adhesive sheet 5p contained therein can be completely cured at the time of process (E) to become the support sheet Dc, or it can be completely cured at a different time. The adhesive sheet 5p contained in the support sheet Da can also be completely cured before the start of process (G) to become the adhesive sheet 5c.

[0088] [(F) Process]

[0089] (F) Process is preparation Figure 7 The process of the chip T2a with adhesive sheet shown is illustrated. The chip T2a with adhesive sheet includes a chip T2 and an adhesive sheet Ta disposed on one surface of the chip T2. The chip T2a with adhesive sheet can be obtained, for example, using a semiconductor wafer and a die-bonded integrated film, through a dicing process and a pick-and-place process.

[0090] [(G) process]

[0091] (G) is a process in which a chip T2a with an adhesive sheet is placed above a chip T1 in contact with the upper surfaces of multiple support sheets Dc. Specifically, the chip T2a is pressed onto the upper surface of the support sheets Dc via the adhesive sheet Ta. This pressing process is preferably performed for 0.5 to 3.0 seconds at 80°C to 180°C and 0.01 MPa to 0.50 MPa. Subsequently, the adhesive sheet Ta is cured by heating. This curing process is preferably performed for 5 minutes or more at 60°C to 175°C and 0.01 MPa to 1.0 MPa. Thus, the adhesive sheet Ta is cured to become the adhesive sheet Tc. After this process, a support structure is constructed on the substrate 10 (see reference). Figure 8 ).

[0092] After process (G) and before process (H), chip T3 is disposed on chip T2 via an adhesive sheet, and chip T4 is disposed on chip T3 via an adhesive sheet. The adhesive sheet can be any thermosetting resin composition similar to the adhesive sheet Ta described above, and is cured by heat to become adhesive sheet Tc (see reference). Figure 1 On the other hand, chips T2, T3, and T4 are electrically connected to the substrate 10 via wires w, respectively. Furthermore, the number of chips stacked on top of chip T1 is not limited to three as in this embodiment; it can be appropriately set.

[0093] [(H) process]

[0094] (H) The process is a process of sealing the gap between the chip T1 and the chip T2 and the like with the sealing material 50. Through this process, the semiconductor device 100 shown in FIG. 1 is completed. Figure 1

[0095] (Hot setting resin composition)

[0096] As described above, the hot setting resin composition constituting the hot setting resin layer 5 contains an epoxy resin, a curing agent, and an elastomer, and, as necessary, further contains an inorganic filler, a curing accelerator, and the like. According to the research by the present inventors and the like, it is preferable that the support sheet Da and the cured support sheet Dc have the following characteristics.

[0097] • Characteristic 1: Position deviation is not easily caused when the support sheet Da is thermocompression-bonded at a prescribed position of the substrate 10 (the melt viscosity of the adhesive sheet 5p at 120°C is, for example, 4,300 Pa-s to 50,000 Pa-s or 5,000 Pa-s to 40,000 Pa-s);

[0098] • Characteristic 2: The adhesive sheet 5c exerts stress relaxation within the semiconductor device 100 (the hot setting resin composition contains an elastomer (a rubber component));

[0099] • Characteristic 3: The adhesive strength with respect to the adhesive sheet Tc of the chip with an adhesive sheet is sufficiently high (the die shear strength of the adhesive sheet 5c with respect to the adhesive sheet Tc is, for example, 2.0 MPa to 7.0 MPa or 3.0 MPa to 6.0 MPa);

[0100] • Characteristic 4: The shrinkage rate accompanying curing is sufficiently small;

[0101] • Characteristic 5: The visibility of the support sheet Da based on a camera is good in the pick-up process (the hot setting resin composition contains, for example, a colorant);

[0102] • Characteristic 6: The adhesive sheet 5c has a sufficient mechanical strength.

[0103] [Epoxy resin]

[0104] The epoxy resin, if it has an adhesive action upon curing, is not particularly limited. It is possible to use a difunctional epoxy resin such as a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type epoxy resin, and the like; a novolak type epoxy resin such as a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, and the like. Furthermore, it is possible to apply a generally known resin such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocycle-containing epoxy resin, or an alicyclic epoxy resin. These can be used singly in one kind, or two or more kinds can be used in combination.

[0105] [Curing agent]

[0106] ​As the curing agent, for example, phenol resins, ester compounds, aromatic amines, aliphatic amines, and acid anhydrides can be cited. Among them, from the viewpoint of achieving high crystal grain shear strength, phenol resins are preferred. As commercially available products of phenol resins, for example, LF-4871 (trade name, BPA novolak type phenol resin) manufactured by DIC Corporation, HE-100C-30 (trade name, phenyl aralkyl type phenol resin) manufactured by AIR WATER INC., Phenolite KA and TD series manufactured by DIC Corporation, Milex XLC-series and XL series (for example, Milex XLC-LL) manufactured by Mitsui Chemicals, Inc., HE series (for example, HE100C-30) manufactured by AIR WATER INC., MEHC-7800 series (for example, MEHC-7800-4S) manufactured by Meiwa Plastic Industries, Ltd., and JDPP series manufactured by JEF Chemical Corporation can be cited. These can be used singly or in combination of two or more.

[0107] Regarding the blending amount of the epoxy resin and the phenol resin, from the viewpoint of achieving high crystal grain shear strength, the equivalent ratio of the epoxy equivalent to the hydroxyl equivalent is preferably 0.6 to 1.5, more preferably 0.7 to 1.4, and further preferably 0.8 to 1.3. By making the blending ratio within the above range, it is easy to achieve both the curing property and the fluidity at a sufficiently high level.

[0108] [elastomer]

[0109] As the elastomer, for example, acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, polybutadienes, acrylonitriles, epoxy-modified polybutadienes, maleic anhydride-modified polybutadienes, phenol-modified polybutadienes, and carboxyl-modified acrylonitriles can be cited.

[0110] From the viewpoint of achieving high crystal grain shear strength, as the elastomer, an acrylic resin is preferred, and furthermore, an acrylic resin having an epoxy group or a glycidyl group as a crosslinking functional group such as a (meth)acrylic acid copolymer containing an epoxy group obtained by polymerizing a functional monomer such as glycidyl acrylate or glycidyl methacrylate is more preferred. Among the acrylic resins, a (meth)acrylate copolymer containing an epoxy group and an acrylic rubber containing an epoxy group are preferred, and an acrylic rubber containing an epoxy group is more preferred. The acrylic rubber containing an epoxy group is a rubber having an epoxy group formed mainly from a copolymer of butyl acrylate and acrylonitrile or the like, a copolymer of ethyl acrylate and acrylonitrile or the like. In addition, the acrylic resin can have not only an epoxy group but also an alcoholic or phenolic hydroxyl group, a carboxyl group, or the like as a crosslinking functional group.

[0111] As commercially available products of the acrylic resin, SG-70L, SG-708-6, WS-023EK30, SG-280EK23, SG-P3 solvent-modified product (trade name, acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent: cyclohexanone), and the like manufactured by Nagase Chemtex Corporation can be exemplified.

[0112] From the viewpoint of achieving high grain shear strength, the glass transition temperature (Tg) of the acrylic resin is preferably -50°C to 50°C, and more preferably -30°C to 30°C. From the viewpoint of achieving high grain shear strength, the weight average molecular weight (Mw) of the acrylic resin is preferably 1,000,000 to 30,000,000, and more preferably 5,000,000 to 20,000,000. Here, Mw refers to a value obtained by gel permeation chromatography (GPC) measurement, using a standard curve based on standard polystyrene for conversion. In addition, by using an acrylic resin having a narrow molecular weight distribution, there is a tendency to be able to form a highly elastic adhesive sheet.

[0113] From the viewpoint of achieving high grain shear strength, the amount of the acrylic resin contained in the thermosetting resin composition is preferably 10 parts by mass to 200 parts by mass, and more preferably 20 parts by mass to 100 parts by mass, relative to 100 parts by mass of the total of the epoxy resin and the epoxy resin curing agent.

[0114] [Inorganic filler]

[0115] As the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, and crystalline silica, amorphous silica can be exemplified. These can be used alone or in combination with two or more.

[0116] From the viewpoint of achieving high grain shear strength, the average particle diameter of the inorganic filler is preferably 0.005 μm to 1.0 μm, and more preferably 0.05 μm to 0.5 μm. From the viewpoint of achieving high grain shear strength, the surface of the inorganic filler is preferably chemically modified. As a material suitable for chemically modifying the surface, a silane coupling agent can be exemplified. As the type of functional group of the silane coupling agent, for example, a vinyl group, an acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, an ethoxy group can be exemplified.

[0117] From the viewpoint of achieving high grain shear strength, the content of the inorganic filler is preferably 20 parts by mass to 200 parts by mass, and more preferably 30 parts by mass to 100 parts by mass, relative to 100 parts by mass of the resin component of the thermosetting resin composition.

[0118] [Hardening Accelerator]

[0119] As the hardening accelerator, for example, imidazole and its derivatives, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts can be listed. From the viewpoint of achieving high grain shear strength, compounds of the imidazole type are preferred. As the imidazole, 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, and the like can be listed. These can be used singly or in combination of two or more.

[0120] From the viewpoint of achieving high grain shear strength, the content of the hardening accelerator of the thermosetting resin composition is preferably 0.04 parts by mass to 3 parts by mass, more preferably 0.04 parts by mass to 0.2 parts by mass, relative to 100 parts by mass of the total of the epoxy resin and the epoxy resin curing agent.

[0121] <Second Embodiment>

[0122] Figure 9 is a cross-sectional view schematically showing a semiconductor device of the second embodiment. The semiconductor device 100 related to the first embodiment is of a type in which the chip T1 is separated from the adhesive sheet Tc, in contrast to which, in the semiconductor device 200 related to the present embodiment, the chip T1 is in contact with the adhesive sheet Tc. That is, the adhesive sheet Tc is in contact with the upper surface of the chip T1 and the upper surface of the support sheet Dc. By appropriately setting the thickness of the film D for support sheet formation, for example, it is possible to make the position of the upper surface of the chip T1 coincide with the position of the upper surface of the support sheet Dc.

[0123] In the semiconductor device 200, the chip T1 is not connected by wire bonding to the substrate 10, but is connected by flip chip. In addition, even in a type in which the chip T1 is wire-bonded to the substrate 10, the chip T1 can be in a state of being in contact with the adhesive sheet Tc, provided that it is configured so that the wire w is embedded in the adhesive sheet Ta. Figure 8 ).

[0124] As shown in Figure 9 , the adhesive sheet Tc between the chip T1 and the chip T2 covers the region R in the chip T2 opposite to the chip T1, and continuously extends from the region R to the periphery side of the chip T2. This one adhesive sheet Tc covers the region R of the chip T2, and is interposed between the chip T2 and the plurality of support sheets to adhere them. Figure 9The lower surface of the chip T2 in the above-described embodiment corresponds to the back surface. As described above, in recent years, the back surface of a chip is often formed with unevenness. By covering substantially the entire back surface of the chip T2 with the adhesive sheet Tc, even if the upper surface of the chip T1 contacts the adhesive sheet Tc, it is possible to suppress the chip T2 from being cracked or broken.

[0125] The above describes the embodiments of the present application in detail, but the present application is not limited to the above-described embodiments. For example, in the above-described embodiments, the laminated film 20 having the ultraviolet-cured pressure-sensitive adhesive layer 2 is exemplified, but the pressure-sensitive adhesive layer 2 can be a pressure-sensitive type.

[0126] In the above-described embodiments, as shown in (b) of the above-described embodiment, Figure 3 The support sheet-forming laminated film 20 exemplified in the above-described embodiment has a three-layer structure, but the support sheet-forming laminated film can have two layers or four or more layers. Figure 10 The support sheet-forming laminated film 20A shown in (a) has a two-layer film D2 (support sheet-forming film) including a thermosetting resin layer 5 and a resin layer 6. That is, in the support sheet-forming laminated film 20A, the thermosetting resin layer 5 is disposed between the pressure-sensitive adhesive layer 2 and the outermost resin layer 6.

[0127] The ratio of the thickness of the thermosetting resin layer 5 to the thickness of the two-layer film D2 is preferably 0.1 to 0.8, more preferably 0.2 to 0.7, and further preferably 0.2 to 0.6. By the ratio being 0.1 or more, the adhesive sheet 5p and the adhesive sheet 5c can more highly exert their functions (for example, supporting the chip T2 and preventing positional displacement of the resin sheet 6p). On the other hand, if the ratio is 0.8 or less, the resin sheet 6p has a sufficient thickness, and thus the resin sheet 6p functions like a spring plate, and more excellent pickability can be achieved (see (d) of the above-described embodiment). From these viewpoints, the thickness of the resin layer 6 is, for example, 20 μm to 80 μm, and can also be 20 μm to 60 μm. The thickness of the thermosetting resin layer 5 is, for example, 5 μm to 120 μm, and can also be 10 μm to 60 μm. Figure 5

[0128] In the support sheet-forming laminated film 20 and the support sheet-forming laminated film 20A, a metal layer (for example, a copper layer or an aluminum layer) having a tensile elastic modulus of 8.0 MPa or more can be used instead of the resin layer 6. The thickness of the metal layer is, for example, 5 μm to 100 μm, and can also be 10 μm to 90 μm or 20 μm to 80 μm. By the support sheet-forming laminated film 20 and the support sheet-forming laminated film 20A including the metal layer, in addition to excellent pickability, excellent visibility of the support sheet in the picking process can also be achieved by the optical contrast between the resin material and the metal material.

[0129] ​The support sheet-forming laminated film 20A can be manufactured, for example, by the following steps.

[0130] • a step of preparing a laminated film provided with a base material film 1, a pressure-sensitive adhesive layer 2, and a thermosetting resin layer 5 in this order;

[0131] • a step of bonding a resin layer 6 to the surface of the laminated film.

[0132] Examples

[0133] The present application will be described below by way of examples, but the present application is not limited to these examples.

[0134] (Preparation of varnish A)

[0135] Varnish A for forming a thermosetting resin layer of a support sheet-forming film was prepared using the following materials.

[0136] • Epoxy resin 1: YDCN-700-10: (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., a cresol novolac-type epoxy resin, solid at 25°C) 5.4 parts by mass

[0137] • Epoxy resin 2: YDF-8170C: (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., a liquid bisphenol F-type epoxy resin, liquid at 25°C) 16.2 parts by mass

[0138] • Phenol resin (curing agent): LF-4871: (trade name, manufactured by DIC Corporation, a BPA novolac-type phenol resin) 13.3 parts by mass

[0139] • Inorganic filler: SC2050-HLG: (trade name, manufactured by Admatechs Company Limited, a silica filler dispersion liquid, average particle diameter 0.50 μm) 49.8 parts by mass

[0140] • Elastomer: SG-P3 solvent-altered product (trade name, manufactured by Nagase Chemtex Corporation, an acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent: cyclohexanone) 14.9 parts by mass

[0141] • Coupling agent 1: A-189: (trade name, manufactured by GE Toshiba Corporation, γ-mercaptopropyltrimethoxysilane) 0.1 parts by mass

[0142] • Coupling agent 2: A-1160: (trade name, manufactured by GE Toshiba Corporation, γ-ureidopropyltriethoxysilane) 0.3 parts by mass

[0143] • Curing accelerator: Curezol 2PZ-CN: (trade name, manufactured by SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole) 0.05 parts by mass

[0144] • Solvent: cyclohexane

[0145] (Preparation of varnish B)

[0146] Varnish B for forming a thermosetting resin layer of a support sheet forming film was prepared using the following materials.

[0147] • Epoxy resin: YDCN-700-10: (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., novolak type epoxy resin, solid at 25°C) 13.2 parts by mass

[0148] • Phenol resin (curing agent): HE-100C-30: (trade name, manufactured by AIR WATER INC., phenyl aralkyl type phenol resin) 11.0 parts by mass

[0149] • Inorganic filler: Aerosil R972: (trade name, manufactured by NIPPON AEROSIL CO., LTD., silicon dioxide, average particle diameter 0.016 μm) 7.8 parts by mass

[0150] • Elastomer: SG-P3 solvent-altered product (trade name, manufactured by Nagase Chemtex Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent is cyclohexanone) 66.4 parts by mass

[0151] • Coupling agent 1: A-189: (trade name, manufactured by GE Toshiba Corporation, γ-mercaptopropyltrimethoxysilane) 0.4 parts by mass

[0152] • Coupling agent 2: A-1160: (trade name, manufactured by GE Toshiba Corporation, γ-ureidopropyltriethoxysilane) 1.15 parts by mass

[0153] • Curing accelerator: Curezol 2PZ-CN: (trade name, manufactured by SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole) 0.03 parts by mass

[0154] • Solvent: cyclohexane

[0155] Example 1

[0156] As described above, the solid content ratio of the varnish A was adjusted to 40 mass% using cyclohexanone as a solvent. The varnish A was filtered with a 100-mesh filter while vacuum defoaming was performed. As a film to which the varnish A was applied, a polyethylene terephthalate (PET) film (thickness: 38 μm) on which a release treatment was performed was prepared. The varnish A after vacuum defoaming was applied to the surface on which the release treatment was performed of the PET film. The applied varnish A was subjected to heat drying in two stages of 90°C for 5 minutes and then 140°C for 5 minutes. Thus, a thermosetting resin layer in a B-stage state (semi-cured state) was formed on the surface of the PET film. A polyimide film (thickness: 25 μm, tensile elastic modulus: 46.4 MPa) was attached to the surface of the thermosetting resin layer on the surface of the PET film by a hot plate at 70°C, whereby a support sheet-forming film having the same constitution as the double-layer film D2 shown in Fig. 1 was produced. Figure 10 The same constitution as the double-layer film D2 shown in Fig. 1 was produced.

[0157] A laminated film (cutting tape) having an ultraviolet-curable pressure-sensitive adhesive layer was produced in the following order. First, a copolymer was obtained by solution radical polymerization using 83 parts by mass of acrylic acid 2-ethylhexyl ester, 15 parts by mass of acrylic acid 2-hydroxyethyl ester, and 2 parts by mass of methacrylic acid as raw materials, and using ethyl acetate as a solvent. 12 parts by mass of 2-methacryloyloxyethyl isocyanate was reacted with the acrylic copolymer, and an ultraviolet irradiation-type acrylic copolymer having a carbon-carbon double bond was synthesized. At the time of the above reaction, 0.05 parts of hydroquinone-monomethyl ether was used as a polymerization inhibitor. The weight average molecular weight of the synthesized acrylic copolymer was measured by GPC, and the result was 300,000 to 700,000. The acrylic copolymer thus obtained, 2.0 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name: Coronate L) as a curing agent, and 0.5 parts of 1-hydroxycyclohexyl phenyl ketone as a photopolymerization initiator were mixed, and an ultraviolet irradiation-type pressure-sensitive adhesive solution was prepared. The ultraviolet irradiation-type pressure-sensitive adhesive solution was applied to a release film made of polyethylene terephthalate (thickness: 38 μm) in such a manner that the thickness after drying was 10 μm, and drying was performed. Then, a film made of polyolefin (thickness: 90 μm) on which a corona discharge treatment was performed on one side was attached to the pressure-sensitive adhesive layer. The obtained laminated film was aged in a constant-temperature bath at 40°C for 72 hours, and a cutting tape was produced.

[0158] The support sheet-forming film (a double layer film of the thermosetting resin layer and the polyimide film) was attached to the pressure-sensitive adhesive layer of the cutting tape in a manner that the surface of the support sheet-forming film having the thermosetting resin layer faced the pressure-sensitive adhesive layer, using a rubber roller on a hot plate at 70°C. Thus, a laminate of the support sheet-forming film and the cutting tape was obtained. The thickness of the thermosetting resin layer was 25 μm.

[0159] Example 2

[0160] A laminate of the support sheet-forming film and the cutting tape was obtained in the same manner as in Example 1, except that varnish B was used instead of varnish A.

[0161] Comparative Example 1, Comparative Example 2

[0162] A laminate of Comparative Example 1 and Comparative Example 2 was obtained in the same manner as in Example 1 and Example 2, except that the thickness of the thermosetting resin layer was set to 50 μm instead of 25 μm, and a polyimide film was not attached to the surface of the thermosetting resin layer.

[0163] The support sheet-forming film of the examples and the comparative examples was evaluated as follows.

[0164] (1) Peeling strength

[0165] A test piece was prepared by cutting the laminate including the support sheet-forming film of the examples and the comparative examples into a length of 25 mm in width and 100 mm in length. Thereafter, the support sheet-forming film was irradiated with ultraviolet rays from the cutting tape side under conditions of 80 mW / cm 2 , 200 mJ / cm 2 using a halogen lamp. The peeling strength (peeling angle: 180°, peeling speed: 300 mm / min) of the interface between the pressure-sensitive adhesive layer and the support sheet-forming film upon ultraviolet irradiation was measured. The average value of 3 measurements for each example and each comparative example is shown below.

[0166] • Example 1... 0.04 N / 25 mm

[0167] • Example 2... 0.05 N / 25 mm

[0168] • Comparative Example 1... 0.09 N / 25 mm

[0169] • Comparative Example 2... 0.05 N / 25 mm

[0170] (2) Pick-up property

[0171] A support sheet forming film (shape: a circular shape with a diameter of 320 mm) of each of Examples and Comparative Examples was layered with the cutting tape (shape: a circular shape with a diameter of 335 mm). A cutting ring was laminated on the cutting tape of the layered body under conditions of 70°C. The support sheet forming film was singulated under conditions of a height of 55 μm using a cutting machine. Thus, a support sheet with a size of 10 mm x 10 mm was obtained. Ultraviolet rays were irradiated from the pressure-sensitive adhesive layer of the support sheet on the cutting tape side using a halogen lamp under conditions of 80 mW / cm 2 , 200 mJ / cm 2 . Thereafter, the support sheet was picked up in an extended state (extension amount: 3 mm) using a die bonder. As a push-up jig, a three-stage push-up table was used under conditions of a push-up speed of 10 mm / sec and a push-up height of 1200 μm. The pick-up was attempted for 6 support sheets for each of the examples and the comparative examples. As a result, 6 support sheets were all picked up for Example 1 and Example 2. In contrast, the number of support sheets that could be picked up was 2 or less for 6 support sheets for Comparative Example 1 and Comparative Example 2.

[0172] Industrial applicability

[0173] According to the present application, there is provided a semiconductor device manufacturing method in which a process of producing a support sheet can be simplified and excellent pick-up of the support sheet can be achieved in a semiconductor device manufacturing process having a megalithic tomb structure. Furthermore, according to the present application, there is provided a semiconductor device having a megalithic tomb structure, and a support sheet forming layered film and a manufacturing method thereof.

[0174] Explanation of symbols

[0175] 1 - substrate film, 2 - pressure-sensitive adhesive layer, 5 - thermosetting resin layer, 5c - adhesive sheet (cured product), 5p - adhesive sheet, 6 - resin layer, 6p - resin sheet, 10 - substrate, 20, 20A - support sheet forming layered film, 50 - sealing material, 100, 200 - semiconductor device, D - support sheet forming film, D2 - double-layered film (support sheet forming film), Da, Dc - support sheet, R - region, T1 - first chip, T2 - second chip, T2a - chip with adhesive sheet, Ta, Tc - adhesive sheet.

Claims

1. A method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device having a dolmen structure, the semiconductor device comprising: A substrate; A first chip disposed on the substrate; A plurality of support pieces disposed on the substrate and around the first chip; and a second chip supported by the plurality of support pieces and disposed so as to cover the first chip, The manufacturing method of the semiconductor device includes: (A) a step of preparing a laminated film provided with, in order, a base material film, a pressure-sensitive adhesive layer, and a support piece-forming film; (B) a step of forming a plurality of support pieces on a surface of the pressure-sensitive adhesive layer by singulating the support piece-forming film; (C) a step of picking up the support pieces from the pressure-sensitive adhesive layer; (D) a step of disposing a first chip on a substrate; (E) a step of disposing a plurality of the support pieces on the substrate and around the first chip or around a region where the first chip is to be disposed; (F) a step of preparing a chip with an adhesive sheet provided with a second chip and an adhesive sheet provided on one face of the second chip; and (G) a step of constructing a dolmen structure by disposing the chip with the adhesive sheet on surfaces of the plurality of support pieces, The support piece-forming film has a multilayer structure including at least a resin layer having a tensile elastic modulus of 8.0 MPa or more and a thermosetting resin layer composed of a different material from the resin layer.

2. The manufacturing method of the semiconductor device according to claim 1, wherein The pressure-sensitive adhesive layer is of an ultraviolet-curing type, The manufacturing method of the semiconductor device includes, between the (B) step and the (C) step, a step of irradiating the pressure-sensitive adhesive layer with ultraviolet rays.

3. The manufacturing method of the semiconductor device according to claim 1 or 2, wherein The manufacturing method of the semiconductor device includes, before the (G) step, a step of heating the support piece-forming film or the support pieces.

4. A semiconductor device having a dolmen structure, the semiconductor device comprising: A substrate; A first chip disposed on the substrate; A plurality of support pieces disposed on the substrate and around the first chip; and A second chip supported by the plurality of support pieces and disposed so as to cover the first chip, The support piece has a multilayer structure including at least a resin piece having a tensile elastic modulus of 8.0 MPa or more and an adhesive piece composed of a different material from the resin piece, the adhesive piece being singulated from a thermosetting resin layer.

5. The semiconductor device according to claim 4, wherein The support piece includes the resin piece and the adhesive piece provided on one face of the resin piece.

6. The semiconductor device according to claim 4, wherein The support piece includes a three-layer structure of the resin piece and a pair of the adhesive pieces sandwiching the resin piece.

7. The semiconductor device according to claim 6, wherein A ratio of a total thickness of the adhesive pieces with respect to a thickness of the three-layer structure is 0.1 to 0.

9.

8. The semiconductor device according to any one of claims 4 to 7, further comprising an adhesive sheet provided so as to cover at least a region in the second chip opposite the first chip, The first chip is separated from the adhesive sheet.

9. The semiconductor device according to claim 8, wherein The adhesive sheet continuously extends from the region of the second chip to a peripheral side of the second chip and is sandwiched by the second chip and the plurality of support sheets.

10. The semiconductor device according to any one of claims 4 to 7, further comprising an adhesive sheet provided so as to cover at least a region of the second chip opposite the first chip, The first chip is in contact with the adhesive sheet.

11. The semiconductor device according to claim 10, wherein The adhesive sheet continuously extends from the region of the second chip to a peripheral side of the second chip and is sandwiched by the second chip and the plurality of support sheets.

12. A support sheet forming laminate used in a manufacturing process of a semiconductor device having a mausoleum structure, the semiconductor device comprising: a substrate; a first chip disposed on the substrate; a plurality of support sheets disposed on the substrate around the first chip; and a second chip supported by the plurality of support sheets and disposed so as to cover the first chip, the support sheet-forming laminated film sequentially having: a base film, a pressure-sensitive adhesive layer, and a support sheet-forming film, the support sheet-forming film having a multilayer structure including at least a resin layer having a tensile elastic modulus of 8.0 MPa or more and a thermosetting resin layer composed of a different material from the resin layer.

13. The support sheet-forming laminated film according to claim 12, wherein the resin layer is a polyimide layer.

14. The support sheet-forming laminated film according to claim 12 or 13, wherein the thickness of the support sheet-forming film is 5 μm to 180 μm.

15. The support sheet-forming laminated film according to claim 12 or 13, wherein the pressure-sensitive adhesive layer is of a pressure-sensitive type or an ultraviolet-curable type.

16. The support sheet-forming laminated film according to claim 12 or 13, wherein the thermosetting resin layer contains an epoxy resin.

17. The support sheet-forming laminated film according to claim 12 or 13, wherein the thermosetting resin layer contains an elastomer.

18. A method for producing a support sheet formation laminated film, which is a method for producing a support sheet formation laminated film used in a manufacturing process of a semiconductor device having a mausoleum structure, the semiconductor device comprising: a substrate; a first chip disposed on the substrate; a plurality of support sheets disposed on the substrate around the first chip; and a second chip supported by the plurality of support sheets and disposed so as to cover the first chip, the method for manufacturing the support sheet-forming laminated film including: a step of preparing a pressure-sensitive adhesive film having a base film and a pressure-sensitive adhesive layer formed on one face of the base film; and a step of laminating a support sheet-forming film on the surface of the pressure-sensitive adhesive layer, the support sheet-forming film having a multilayer structure including at least a resin layer having a tensile elastic modulus of 8.0 MPa or more and a thermosetting resin layer composed of a different material from the resin layer.

Images