Power conversion device and method for manufacturing the same

Abstract

The negative-side busbar (41) has a capacitor connection portion and a first negative terminal portion and a second negative terminal portion (271) exposed from a resin portion (44) and connected to a DC negative terminal (103) of a first power semiconductor module and a second power semiconductor module (30). A protrusion (281) is provided on a partition portion (252b) of a housing (252), the protrusion (281) protruding further toward the molded busbar (40) than an upper surface (257) of the first power semiconductor module and the second power semiconductor module (30), and thermally coupled to the molded busbar (40). The protrusion (281) is arranged between a root portion (275) of an exposed portion of the first negative terminal portion (271) exposed from the resin portion (44) and a second root portion (275) of an exposed portion of the second negative terminal portion (271) exposed from the resin portion (44). Thus, the temperature rise of the capacitor is suppressed by increasing the spatial distance and the creepage distance between the exposed portion of the molded bus bar from the resin portion and the power semiconductor module.

Description

Technical Field

[0001] The invention relates to a power conversion device and a method for manufacturing the power conversion device. Background Art

[0002] A power conversion device for driving a vehicle such as a hybrid vehicle or an electric vehicle is configured by accommodating, for example, a three-phase power semiconductor module and a filter capacitor constituting an inverter circuit in a housing constituting a flow path forming body. The input / output terminals of the power semiconductor module and the filter capacitor are connected to, for example, a molded bus bar, and the signal terminal is connected to a control circuit substrate.

[0003] As an example of such a power conversion device, a structure is known in which a molded bus bar is directly mounted on the entire flat surface of a flow path forming body. The terminal portion of the input and output terminals of the power semiconductor module connected to the molded bus bar is exposed from the resin portion on the opposite side of the flow path forming body. The molded bus bar and the flow path forming body are arranged in contact with each other, but the surface of the molded bus bar in contact with the flow path forming body is covered with the resin portion constituting the molded bus bar. It is recorded that according to this structure, the heat transferred from the power semiconductor module to the molded bus bar is cooled by the flow path forming body, thereby being able to reduce the temperature of the bus bar (for example, refer to patent document 1).

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2014-171343 Summary of the invention

[0007] Technical problem to be solved by the invention

[0008] In the structure described in the above-mentioned patent document 1, the molded busbar is directly mounted on the entire flat surface of the flow path forming body and coupled in a heat-conductive manner. Therefore, the spatial distance from the flat surface of the flow path forming body to the root exposed from the resin portion of the busbar terminal portion (hereinafter referred to as the terminal portion exposed root) is almost equal to the thickness of the molded busbar. In addition, since the busbar and the flow path forming body are connected at a position directly below the exposed root of the busbar terminal portion, the distance along the flat surface of the flow path forming body in the creepage distance from the exposed root of the busbar terminal portion to the flow path forming body is almost zero. Therefore, the creepage distance from the exposed root of the busbar terminal portion to the flow path forming body is also almost equal to the thickness of the molded busbar. That is, the spatial distance and creepage distance from the exposed root of the busbar terminal portion to the flow path forming body are a shorter distance that is almost equal to the thickness of the busbar mold. Therefore, due to the heat generated by the power semiconductor module, the busbar becomes high temperature, the temperature of the filter capacitor rises, and the temperature of the filter capacitor may exceed the heat-resistant temperature.

[0009] Technical solutions adopted to solve technical problems

[0010] According to a first aspect of the present invention, a power conversion device includes: a capacitor; a first power semiconductor module and a second power semiconductor module each having an input terminal or an output terminal protruding from one side; a housing having a capacitor accommodating portion for accommodating the capacitor, a semiconductor module accommodating portion for accommodating the first power semiconductor module and the second power semiconductor module, and a partition provided between the first power semiconductor module and the second power semiconductor module; and a connecting member in which a resin portion and a connecting conductor are integrally provided, and the connecting member is arranged on the one side of the first power semiconductor module and the second power semiconductor module, and the connecting conductor The body has a capacitor connecting portion connected to the capacitor, a first terminal portion exposed from the resin portion and connected to the terminal of the first power semiconductor module, and a second terminal portion exposed from the resin portion and connected to the terminal of the second power semiconductor module. A protrusion is provided on the partition portion of the shell, the protrusion protrudes further toward the connecting member than the one surface of the first power semiconductor module and the second power semiconductor module, and is thermally coupled to the connecting member. The protrusion is thermally coupled to the connecting member and is arranged between a first root of an exposed portion of the first terminal portion exposed from the resin portion and a second root of an exposed portion of the second terminal portion exposed from the resin portion.

[0011] According to a second aspect of the present invention, a method for manufacturing a power conversion device includes: accommodating a capacitor in a capacitor accommodating portion of a shell, and in a semiconductor module accommodating portion of the shell provided with a partition, accommodating a first power semiconductor module and a second power semiconductor module on both sides of the partition of the shell, the first power semiconductor module and the second power semiconductor module respectively having an input terminal or an output terminal protruding from one side; and arranging a connecting member on the one side of the first power semiconductor module and the second power semiconductor module, in which a resin portion and a connecting conductor are integrally provided, the connecting conductor having a capacitor connecting portion connected to the capacitor, and the connecting conductor having a capacitor connecting portion exposed from the resin portion and connected to the The first terminal portion of the terminal of the first power semiconductor module and the second terminal portion exposed from the resin portion and connected to the terminal of the second power semiconductor module, a protrusion is provided in the partition portion, the protrusion protrudes further toward the connecting component side than the one side of the first power semiconductor module and the second power semiconductor module, and is thermally coupled to the connecting component, and the step of arranging the connecting component on the one side of the first power semiconductor module and the second power semiconductor module includes arranging the protrusion between the first root of the exposed portion of the first terminal portion exposed from the resin portion and the second root of the exposed portion of the second terminal portion exposed from the resin portion, and thermally coupling the protrusion to the connecting component.

[0012] Effects of the Invention

[0013] According to the present invention, by increasing the spatial distance and the creepage distance between the exposed portion of the connection member from the resin portion and the power semiconductor module, it is possible to suppress a temperature increase of the capacitor. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 FIG. 1 is a diagram showing an example of a circuit diagram of the power conversion device of the present invention.

[0015] Figure 2 This is a perspective view of the appearance of a power conversion device according to one embodiment of the present invention.

[0016] Figure 3 yes Figure 2 An exploded perspective view of the power conversion device shown.

[0017] Figure 4 is Figure 3 The illustrated perspective view is a state where a capacitor module, a power semiconductor module, and a molded bus bar are accommodated in a housing.

[0018] Figure 5 yes Figure 2 A cross-sectional view of the power conversion device taken along line VV is shown.

[0019] Figure 6 yes Figure 5 A cross-sectional view of a portion of the power conversion device taken along line VI-VI is shown.

[0020] Figure 7 middle, Figure 7 (A) Yes Figure 5 The enlarged perspective view of the terminal portion and the surrounding area of ​​the power semiconductor module shown in FIG. Figure 7 (B) is a circuit diagram showing an example of a circuit built in the power semiconductor module 30 .

[0021] Figure 8 Viewed from above the shell Figure 4 Top view of the .

[0022] Fig. 9 middle, Fig. 9 (A) Yes Figure 8 Magnified view of region IXa, Fig. 9 (B) is shown in Fig. 9 (A) is a schematic diagram showing the arrangement of the terminals of the power semiconductor module 30 and the terminal portions of the bus bars in the region IXb.

[0023] Fig.10 It shows Figure 6 A diagram which is a main part of and is used to explain the spatial distance and creepage distance in this embodiment.

[0024] Fig.11 It is shown Fig. 9 (A) is a diagram showing the main part of the power semiconductor module and used to explain the position of the protruding portion of the power semiconductor module on a plane.

[0025] Fig.12 It is a top view of the mounting structure of the power conversion device and the motor generator.

[0026] Fig.13 yes Fig.12 Cross-sectional view along line XIII-XIII. DETAILED DESCRIPTION

[0027] Hereinafter, one embodiment of a power conversion device according to the present invention will be described with reference to the drawings.

[0028] Figure 1 FIG. 1 is a diagram showing an example of a circuit diagram of the power conversion device of the present invention.

[0029] The power conversion device of the present invention can be applied to hybrid vehicles and pure electric vehicles. The power conversion device of the present invention is applicable to a vehicle driving power conversion device such as a car, a truck, etc., and can also be applied to other power conversion devices, such as power conversion devices for electric vehicles, ships, airplanes, etc., and industrial power conversion devices used as control devices for driving motors of factory equipment, or home power conversion devices used in control devices for driving motors of home solar power generation systems or home appliances.

[0030] The power conversion device 200 includes an inverter device 140 and a filter capacitor module 500. The battery 136 is electrically connected to the inverter device 140. The capacitor module 500 provided between the battery 136 and the inverter device 140 filters the DC current. The filter capacitor module 500 has a positive side capacitor terminal 506 and a negative side capacitor terminal 504. The filter capacitor module 500 is electrically connected to the battery 136 via a DC connector 138. The inverter device 140 is connected to the positive side capacitor terminal 506 via a DC positive side terminal 314, and is connected to the negative side capacitor terminal 504 via a DC negative side terminal 316.

[0031] Inverter device 140 includes inverter circuit 144 and control unit 170. Control unit 170 includes drive circuit 174 for driving and controlling inverter circuit 144 and control circuit 172 for supplying control signals to drive circuit 174 via signal line 176. Motor generator 192 is connected to the output side of inverter device 140.

[0032] In the inverter circuit 144, a three-phase (U phase, V phase and W phase) upper and lower arm series circuit 150 is provided corresponding to each phase winding of the armature winding of the motor generator 192, and the upper and lower arm series circuit 150 is composed of an IGBT 328 and a diode 156 that operate as an upper arm, and an IGBT 330 and a diode 166 that operate as a lower arm. Here, IGBT is an abbreviation for an insulated gate bipolar transistor. Each upper and lower arm series circuit 150 has an AC terminal 159 connected to its midpoint portion (intermediate electrode 169). The AC terminal 159 is connected to the AC connector 188 through the AC output side connection conductor 231. In addition, the AC connector 188 is connected to the motor generator 192 through the relay AC connection conductor 241.

[0033] The collector electrode 153 of the IGBT 328 of the upper arm is electrically connected to the positive side capacitor terminal 506 of the capacitor module 500 via the positive terminal 157 through the DC positive side connection conductor 221. The emitter electrode of the IGBT 330 of the lower arm is electrically connected to the negative side capacitor terminal 504 of the capacitor module 500 via the negative terminal 158 through the DC negative side connection conductor 211.

[0034] The control unit 170 includes a drive circuit 174 for driving and controlling the inverter circuit 144, and a control circuit 172 for providing a control signal to the drive circuit 174 via a signal line 176. The IGBT 328 and the IGBT 330 receive the drive signal output from the control unit 170 and operate, and convert the DC power provided from the battery 136 into three-phase AC power. The converted power is provided to the armature winding of the motor generator 192.

[0035] IGBT 328 includes a collector electrode 153, a gate electrode 154, and an emitter electrode 155 for signal. In addition, IGBT 330 includes a collector electrode 163, an emitter electrode 165 for signal, and a gate electrode 164. Diode 156 is electrically connected in parallel with IGBT 328. Diode 166 is electrically connected in parallel with IGBT 330. MOSFET (Metal Oxide Semiconductor Field Effect Transistor) can be used as a power semiconductor element for switching, but in this case, diode 156 and diode 166 are not required.

[0036] The control circuit 172 includes a microcomputer (hereinafter referred to as "microcomputer") for calculating the switching timing of the IGBTs 328 and 330. The target torque value required for the motor generator 192, the current value provided to the armature winding of the motor generator 192 from the upper and lower arm series circuits 150, and the magnetic pole position of the rotor of the motor generator 192 are input to the microcomputer as input information. The target torque value is based on a command signal output from a higher-level control device not shown in the figure. The current value is detected based on a detection signal output from the current sensor 180 via the signal line 182. The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) provided in the motor generator 192. In the present embodiment, the case of detecting the current value of three phases is used as an example for explanation, but the current value of two phases can also be detected.

[0037] Figure 2 is a perspective view of the appearance of a power conversion device according to one embodiment of the present invention. Figure 3 yes Figure 2 An exploded perspective view of the power conversion device shown.

[0038] like Figure 2 As shown, the power conversion device 200 has a substantially rectangular parallelepiped housing composed of a cover 251, a housing 252, and a water channel cover 253. The cover 251, the housing 252, and the water channel cover 253 are each formed of a metal such as an aluminum alloy.

[0039] like Figure 3As shown, six power semiconductor modules 30, capacitor module 500, molded bus bar 40, metal member 50, control circuit substrate 70, substrate base 81, current sensor 180 and AC terminal member 60 are accommodated in a space formed by cover 251 and housing 252. The housing 252 is formed with a semiconductor module accommodating portion 601 for accommodating the six power semiconductor modules 30 and a capacitor module accommodating portion 602 for accommodating the capacitor module 500. The housing 252 is formed with a flow path (not shown) for cooling the six power semiconductor modules 30 accommodated in the semiconductor module accommodating portion 601, and the housing 252 has a function as a flow path forming body.

[0040] Water channel cover 253 is watertightly mounted on housing 252 by covering the lower surface of housing 252 opposite to cover 251. An input and output pipe (not shown) is inserted into water channel cover 253 to supply a refrigerant such as cooling water to the flow path of housing 252 via water channel cover 253.

[0041] The current sensor 180 and the AC terminal member 60 are mounted on opposite sides of one side surface of the cover 251 .

[0042] Each power semiconductor module 30 has a module housing 31 (see Figure 6 ) and the terminal portion 33 (refer to Figure 7 ), and the sealing material 82 (refer to Figure 6 ) is wound around the outer periphery of the module case 31. The metal member 50 is arranged above each power semiconductor module 30. The metal member 50 is provided with six openings 51 for inserting the terminal portions 33 of each power semiconductor module 30.

[0043] The molded bus bar 40 is disposed on the capacitor module 500 accommodated in the capacitor module accommodation portion 602 of the housing 252 and the power semiconductor module 30 accommodated in the semiconductor module accommodation portion 601. The molded bus bar 40 has a plurality of connection terminal portions 270 (see Fig. 9 ).

[0044] The control circuit board 70 is arranged inside the cover 251. Figure 1 The electronic components of the control unit 170 shown are mounted on the control circuit substrate 70. The control circuit substrate 70 is held by a substrate base 81. The substrate base 81 is fixed to a boss portion provided in the housing 252 by a fastening member (not shown).

[0045] Figure 4 The capacitor module, power semiconductor module and molded busbar are housed in Figure 3 A perspective view of the state of the housing shown, Figure 5 yes Figure 2The VV line cross-sectional view of the power conversion device shown in FIG. Figure 5 middle, Figure 1 The cover 251, the control circuit substrate 70, the substrate base 81, and the insulating material 46 shown in the figure are omitted from illustration.

[0046] As described above, the molded bus bar 40 is fixed to the housing 252 by a fastening member above the capacitor module 500 and above the power semiconductor module 30 housed in the housing 252. The metal member 50 is sandwiched between the power semiconductor module 30 and the molded bus bar 40 (see FIG. Figure 6 ). The capacitor module 500 is composed of a plurality of (in Figure 3 The capacitor element 501 is shown as 12 by way of example.

[0047] like Figure 5 As shown in FIG. 1 , the molded bus bar 40 includes a resin portion 44, a negative electrode side bus bar 41, a positive electrode side bus bar 42, and an AC side bus bar 43. That is, the molded bus bar 40 is a member formed by insert molding the negative electrode side bus bar 41, the positive electrode side bus bar 42, and the AC side bus bar 43 as insert members. The negative electrode side bus bar 41, the positive electrode side bus bar 42, and the AC side bus bar 43 are respectively equivalent to Figure 1 The DC negative side connection conductor 211, the DC positive side connection conductor 221 and the AC output side connection conductor 231 are connected. The negative side bus bar 41 and the positive side bus bar 42 are respectively connected to each capacitor element 501 accommodated in the capacitor module accommodating portion 602. In addition, the negative side bus bar 41, the positive side bus bar 42 and the AC side bus bar 43 are connected to the terminal portion 33 of each power semiconductor module 30. The terminal portion 33 includes a plurality of power supply terminals and a plurality of signal terminals, and the details thereof will be described later.

[0048] like Figure 5 As shown, the current sensor 180 and the AC terminal member 60 are mounted on the housing 252. The relay AC bus bar 61 (also see Fig.13 ) is mounted on the AC terminal member 60. The relay AC bus bar 61 is equivalent to Figure 1 The relay AC connection conductor 241 in the middle. The relay AC bus bar 61 extends near the current sensor 180 and is connected to the AC side bus bar 43.

[0049] The negative electrode side bus bar 41 and the AC side bus bar 43 each have a plurality of exposed portions 41a, 43a exposed from the resin portion 44 (see Figure 4 ).like Figure 4As shown in FIG. 1 , the exposed portion 41a of the negative electrode side bus bar 41 and the exposed portion 43a of the AC side bus bar 43 are respectively recessed from the upper surface 44a of the resin portion 44 to the inner side. In other words, there is a gap between the upper surface 44a of the resin portion 44 and the exposed portion 41a of the negative electrode side bus bar 41 or the exposed portion 43a of the AC side bus bar 43. On the other hand, the upper and lower surfaces of the positive electrode side bus bar 42 and the lower surface of the AC side bus bar 43 are covered by the resin portion 44.

[0050] Figure 7 (A) Yes Figure 5 The enlarged perspective view of the terminal portion and the surrounding area of ​​the power semiconductor module shown in FIG. Figure 7 (B) is a circuit diagram showing an example of a circuit built in the power semiconductor module 30 .

[0051] The power semiconductor module 30 has a terminal portion 33 protruding to the outside from the module case 31. The terminal portion 33 includes a plurality of power supply terminals and a plurality of signal terminals as described below.

[0052] like Figure 7 As shown in (B), two IGBTs 328 and 330 and two diodes 156 and 166 are built into the power semiconductor module 30. The IGBT 328 and the diode 156 constitute an upper arm circuit, and the IGBT 330 and the diode 166 constitute a lower arm circuit.

[0053] The DC positive terminal 101 is connected to the collector electrode 153 of the IGBT 328 and the cathode electrode of the diode 156. The DC negative terminal 103 is connected to the emitter electrode 165 of the IGBT 330 and the anode electrode of the diode 166. The DC positive terminal 101 is branched into two to form branch terminals 101a and 101b, and are electrically connected inside the power semiconductor module 30. The DC negative terminal 103 is branched into two to form branch terminals 103a and 103b, and are electrically connected inside the power semiconductor module 30.

[0054] A connection point where the emitter electrode 155 of the IGBT 328 and the collector electrode 163 of the IGBT 330 are connected is connected to a connection point where the anode electrode of the diode 156 and the cathode electrode of the diode 166 are connected, and is also connected to the AC output terminal 102 .

[0055] The gate electrodes 154 and 164 of the IGBTs 328 and 330 are connected to the gate terminals 111 and 121 as signal terminals, respectively, and the emitter electrodes 155 and 165 of the IGBTs 328 and 330 are connected to the emitter terminals 112 and 122 as signal terminals, respectively.

[0056] The gate terminals 111 and 121 and the emitter terminals 112 and 122 are connected to the control unit 170 (see Figure 1 ).

[0057] exist Figure 7 (A) Figure 7 The four signal terminals 113 , 123 to 125 not shown in (B) are terminals for sensor signals for detecting overcurrent and overtemperature of the IGBTs 328 and 330 .

[0058] Figure 6 yes Figure 5 A cross-sectional view of a portion of the power conversion device taken along line VI-VI is shown.

[0059] The housing 252 is provided with a semiconductor module housing 601 for housing the power semiconductor module 30. The housing 252 is provided with a partition 252b in the semiconductor module housing 601. The power semiconductor module 30 is housed on both sides of the partition 252b of the semiconductor module housing 601. The power semiconductor module 30 has a metal module housing 31 having a plurality of heat dissipation fins 31a. The IGBTs 328 and 330 and the diodes 156 and 166 ( Figure 6 In the figure, only the IGBT 328 is shown, and the electronic component structure 32 formed by integrating the IGBT 328 is accommodated in the module housing 31. Figure 7 The terminal assembly 34 of the terminal portion 33 shown is accommodated in the module case 31. The electronic component structure 32 and the terminal assembly 34 are fixed in the module case 31 by the resin 36 filled in the module case 31.

[0060] The metal member 50 is arranged on the upper part of the power semiconductor module 30. The metal member 50 is fixed to the housing 252 by a fastening member not shown in the figure, and the power semiconductor module 30 is pressed and fixed to the water channel cover 253, which is fixed to the bottom of the housing 252. Although not shown in the figure, it is preferred that the metal member 50 is formed into a cross-sectional corrugated shape and has elasticity, and the power semiconductor module 30 is pressed on the water channel cover 253 by the elastic force of the metal member 50.

[0061] Alternatively, a structure may be employed in which the power semiconductor module 30 is held at the bottom of the case 252 .

[0062] A flow path through which a refrigerant such as cooling water flows is formed in the semiconductor module housing 601 housing the power semiconductor module 30. The sealing material 82 is interposed between the module case 31 and the case 252, and the module case 31 and the case 252 have a watertight structure.

[0063] The molded bus bar 40 is disposed on the upper portion of the metal member 50 with a gap therebetween. That is, a space is provided between the metal member 50 and the molded bus bar 40.

[0064] The terminal portion 33 of the power semiconductor module 30 is inserted through the opening 51 of the metal member 50 and extends upward. Although not shown, the gate terminals 111, 121, emitter terminals 112, 122, and signal terminals 113, 123 to 125 in the terminal portion 33 are connected to wiring (not shown) provided on the control circuit substrate 70 via the substrate base 81. The DC positive terminal 101 and DC negative terminal 103 as power supply terminals and the AC output terminal 102 as output terminals in the terminal portion 33 are connected to the molded bus bar 40.

[0065] Figure 8 Viewed from above the shell Figure 4 A top view of Fig. 9 (A) Yes Figure 8 Magnified view of region IXa, Fig. 9 (B) is shown in Fig. 9 (A) is a schematic diagram showing the arrangement of the terminals of the power semiconductor module 30 and the terminal portions of the bus bars in the region IXb.

[0066] like Figure 8 As shown in FIG. 2 , each power semiconductor module 30 is configured to sandwich the partition portion 252 b (see FIG. 25 ) of the housing 252. Figure 6 ) As for the opposite pair, three semiconductor module pairs are accommodated in the semiconductor module accommodating portion 601.

[0067] The negative-side bus bar 41 includes a main body portion 261 extending on the capacitor module 500 and an extension portion 262 extending between each pair of power semiconductor modules 30. The pair of power semiconductor modules 30 are arranged close to each other, and the distance between the pair of power semiconductor modules 30 is small. Therefore, the width of the extension portion 262 (the length in the direction perpendicular to the extension direction) is smaller than the width of the main body portion 261.

[0068] Although not shown, the positive-side bus bar 42 also similarly has a main body portion extending on the capacitor module 500 and an extending portion extending between each pair of power semiconductor modules 30 and having a smaller width than the main body portion.

[0069] The AC-side bus bar 43 further includes an extending portion 264 extending between each pair of power semiconductor modules 30 , and a main body portion 263 provided outside between each pair of power semiconductor modules 30 .

[0070] like Fig. 9As shown in (A) and (B), two pairs of negative-side terminal portions 271 are formed on the negative-side bus bar 41, and two pairs of positive-side terminal portions 272 are formed on the positive-side bus bar 42. The two pairs of negative-side terminal portions 271 are connected to the branch terminals 103a and 103b of the DC negative-side terminal 103 of the power semiconductor module 30, for example, by welding. The two pairs of positive-side terminal portions 272 are connected to the branch terminals 101a and 101b of the DC positive-side terminal 101 of the power semiconductor module 30, for example, by welding.

[0071] Furthermore, a pair of AC-side terminal portions 273 are formed on the AC-side bus bar 43. The pair of AC-side terminal portions 273 are joined to the AC output terminals 102 of the power semiconductor module 30 by welding, for example.

[0072] The two pairs of negative electrode terminal portions 271, positive electrode terminal portions 272, and AC terminal portions 273 constitute the connection terminal portion 270 of the molded bus bar 40. The insulating material 46 (see Figure 3 ) is provided with a storage space for accommodating the terminal parts 271, 272, 273, and each terminal part 271, 272, 273 of each connecting terminal part 270 is covered by the insulating material 46 when accommodated in the storage space of the insulating material 46.

[0073] Reference Figure 6 , the connection structure between the molded bus bar 40 and the terminal portion 33 of the power semiconductor module 30 is described. The connection structure between the negative-side bus bar 41 and the branch terminal 103a of the DC negative-side terminal 103 of the power semiconductor module 30 is described as a representative. Hereinafter, the branch terminal 103a is simply referred to as the DC negative-side terminal 103.

[0074] Each negative terminal portion 271 of the negative bus bar 41 is exposed from the resin portion 44 at an end portion in the width direction (orthogonal to the extension direction) of the extension portion 262 and is bent in an oblique direction at a root portion 275. The negative terminal portion 271 is connected to the DC negative terminal 103 of the power semiconductor module 30 at a front end portion.

[0075] In the above description, the connection structure between the negative terminal portion 271 of the negative bus bar 41 and the branch terminal 103a of the DC negative terminal 103 of the power semiconductor module 30 is described. However, the connection structure between the negative terminal portion 271 of the negative bus bar 41 and the branch terminal 103b of the DC negative terminal 103 is also the same as described above. Fig. 9As shown in (B), the connection structure between the positive side terminal portion 272 of the positive side bus bar 42 and the branch terminal 101a and the branch terminal 101b of the DC positive side terminal 101 of the power semiconductor module 30, and the connection structure between the AC side terminal portion 273 of the AC side bus bar 43 and the AC output terminal 102 of the power semiconductor module 30 are also the same as described above.

[0076] The partition 252b of the housing 252 is provided with a protrusion 281 that protrudes toward the molded bus bar 40 from the upper surface 257 of the power semiconductor module 30. A gap is provided between the metal member 50 and the molded bus bar 40, and Figure 6 In the example, the protrusion 281 is shown to protrude further than the upper surface of the metal member 50. However, the protrusion 281 may not protrude further than the upper surface of the metal member 50.

[0077] A heat conductive material 282 such as a heat conductive grease or sheet is sandwiched between the protrusion 281 and the molded bus bar 40, and the housing 252 and the molded bus bar 40 are coupled in a manner that allows heat conduction, that is, thermal coupling. The protrusion 281 is arranged between a pair of power semiconductor modules 30, and the pair of power semiconductor modules 30 are arranged with the partition 252b sandwiched therebetween. The thermal coupling between the protrusion 281 and the molded bus bar 40 may be a structure in which the protrusion 281 and the molded bus bar 40 are in direct contact without sandwiching the heat conductive material 282.

[0078] Fig.11 It is shown Fig. 9 (A) is a diagram showing the main part of the power semiconductor module and used to explain the position of the protruding portion of the power semiconductor module on a plane.

[0079] like Fig.11 As shown, the protrusion 281 of the power semiconductor module 30 extends parallel to the terminal portion 33 between the terminal portion 33 of one power semiconductor module 30 and the terminal portion 33 of another power semiconductor module 30, and is configured to overlap with the extension portion 262 of the negative side bus bar 41 and the extension portion 264 of the AC side bus bar 43 when viewed from above.

[0080] In power conversion device 200, power semiconductor module 30 becomes hot due to heat generation of power semiconductor elements such as IGBT 328 and 330, and the heat is conducted to capacitor module 500 via molded bus bar 40. Therefore, the temperature of each capacitor element 501 of capacitor module 500 may rise and exceed the heat-resistant temperature.

[0081] In the present embodiment, the configuration is such that the heat transferred to the capacitor module 500 can be suppressed by increasing the spatial distance and the creepage distance between the case 252 and the molded bus bar 40 .

[0082] This will be described below.

[0083] Fig.10 It shows Figure 6 A diagram which is a main part of and is used to explain the spatial distance and creepage distance in this embodiment.

[0084] exist Fig.10 In the diagram, the power semiconductor module 30 facing the left side is referred to as the first power semiconductor module 30 a , and the power semiconductor module 30 facing the right side is referred to as the second power semiconductor module 30 b .

[0085] The protrusion 281 is provided at the upper end of the partition 252b of the housing 252. The upper surface 281a of the protrusion 281 protrudes further toward the molded bus bar 40 than the upper surface 257 of the first power semiconductor module and the second power semiconductor module 30b. Therefore, the spatial distance Cl between the root 275 of the negative terminal portion 271 exposed from the resin portion 44 of the molded bus bar 40 and the first power semiconductor module 30a and the second power semiconductor module 30b is greater than the spatial distance in the case of the structure in which the molded bus bar 40 is directly arranged on the upper surface 257 of the power semiconductor module 30 by the amount of the protrusion 281 protruding from the upper surface 257 of the first power semiconductor module and the second power semiconductor module 30b.

[0086] In addition, if Fig.10 As shown in , the protrusion 281 provided on the partition 252b of the housing 252 is arranged between the first power semiconductor module 30a and the second power semiconductor module 30b. The creepage distance is the sum of the distance in the horizontal direction along the lower surface 40a of the molded busbar 40 from the protrusion 281 to the root 275 of the negative side terminal portion 271 and the distance in the direction orthogonal to the horizontal direction. In the present embodiment, the protrusion 281 is located between the second DC negative side terminal 103 of the first power semiconductor module 30a and the DC negative side terminal 103 of the second power semiconductor module 30b. Therefore, the distance in the horizontal direction of the creepage distance is not zero. In contrast, in a structure in which the molded busbar 40 is directly arranged on the upper surface 257 of the power semiconductor module 30, the distance in the horizontal direction of the creepage distance is almost zero.

[0087] Therefore, the creepage distance Cr1 from the protrusion 281 of the housing 252 to the root 275 of the negative-side terminal portion 271 of the first power semiconductor module 30a is greater than the creepage distance in the case of a structure in which the molded bus bar 40 is directly arranged on the upper surface 257 of the power semiconductor module 30. In addition, the creepage distance Cr2 from the protrusion 281 of the housing 252 to the root 275 of the negative-side terminal portion 271 of the second power semiconductor module 30b is greater than the creepage distance in the case of a structure in which the molded bus bar 40 is directly arranged on the upper surface 257 of the power semiconductor module 30.

[0088] Thus, in the power conversion device 200 according to the embodiment of the present invention, the spatial distance and creepage distance between the root 275 of the negative terminal portion 271 of the molded bus bar 40 exposed from the resin portion 44 and the power semiconductor module 30 can be increased compared to the conventional structure. Therefore, the amount of heat transferred from the power semiconductor module 30 to the molded bus bar 40 can be reduced. Therefore, the amount of heat transferred from the power semiconductor module 30 to the capacitor element 501 via the molded bus bar 40 can be reduced, and the capacitor element 501 can be suppressed from becoming high temperature.

[0089] The protrusion 281 is preferably arranged near the center of the DC negative terminal 103 of the first power semiconductor module 30a and the DC negative terminal 103 of the second power semiconductor module 30b. This is because the creepage distance Cr1 between the protrusion 281 of the housing 252 and the root 275 of the negative terminal portion 271 of the first power semiconductor module 30a and the creepage distance Cr2 between the protrusion 281 of the housing 252 and the root 275 of the negative terminal portion 271 of the second power semiconductor module 30b can be made substantially equal. However, if the creepage distance Cr1 and the creepage distance Cr2 are positions that satisfy the creepage distance specified in international standards such as IEC60243-1, the position of the protrusion 281 may not be near the center of the DC negative terminal 103 of the first power semiconductor module 30a and the DC negative terminal 103 of the second power semiconductor module 30b.

[0090] In addition, preferably, the position of the upper surface 281a of the protrusion 281 is set so that the spatial distance Cl from the root 275 of the negative side terminal portion 271 to the upper surface 257 of the power semiconductor module 30 also satisfies the spatial distance specified by international standards such as IEC60243-1.

[0091] In the above, the connection structure between the DC negative terminal 103 of the power semiconductor module 30 and the negative terminal portion 271 of the negative bus bar 41 is exemplified. However, the connection structure between the DC positive terminal 101 of the power semiconductor module 30 and the positive terminal portion 272 of the positive bus bar 42 and the connection structure between the AC terminal portion 273 of the AC bus bar 43 and the AC output terminal 102 of the power semiconductor module 30 are also the same.

[0092] Fig.12 is a top view of the mounting structure of the power conversion device and the electric generator, Fig.13 yes Fig.12 The XIII-XI II line cross-sectional view in FIG. Fig.12 In the figure, the electric generator is omitted. Figure 3 to Figure 5 Provide explanation.

[0093] The current sensor 180 and the AC terminal member 60 are mounted on the side of the housing 252 on which the semiconductor module housing portion 601 is formed. A plurality of relay AC bus bars 61 are mounted on the AC terminal member 60. The relay AC bus bars 61 correspond to Figure 1 Relay AC connection conductor 241.

[0094] The relay AC bus bar 61 is electrically connected to the motor generator 192. The relay AC bus bar 61 is inserted near the current sensor 180 and connected to the AC side bus bar 43. The AC terminal member 60 to which the relay AC bus bar 61 is attached is coupled to the housing 252 in a heat-conductive manner, that is, thermally coupled.

[0095] The motor generator 192 generates a large amount of heat when driven. The heat generated by the motor generator 192 is thermally conducted to the molded bus bar 40 via the relay AC bus bar 61. When the relay AC bus bar 61 becomes hot, heat is conducted via the AC side bus bar 43, and the electronic components in the power conversion device 200 such as the capacitor module 500 become hot.

[0096] In this embodiment, since the relay AC bus 61 is constructed to be thermally coupled to the shell 252, the relay AC bus 61 is cooled by a cooling structure that provides refrigerant via the shell 252, which can prevent electronic components in the power conversion device 200 such as the capacitor module 500 connected to the molded bus 40 from becoming hot.

[0097] According to one embodiment of the present invention, the following effects are achieved.

[0098] (1) The power conversion device 200 includes a capacitor module 500, a first power semiconductor module, a second power semiconductor module 30, a case 252 having a capacitor module housing portion 602 and a semiconductor module housing portion 601, and a molded bus bar 40 having a resin portion 44 and a negative-electrode bus bar 41. The negative-electrode bus bar 41 includes a capacitor connecting portion connected to a capacitor element 501 constituting the capacitor module 500, a first negative-electrode terminal portion 271 exposed from the resin portion 44 and connected to a DC negative-electrode terminal 103 of the first power semiconductor module 30, and a second negative-electrode terminal portion 271 connected to the negative-electrode terminal portion 271 of the second power semiconductor module 30. The partition 252b of the housing 252 is provided with a protrusion 281, which protrudes further toward the molded bus bar 40 than the upper surface 257 of the first power semiconductor module 30 and the second power semiconductor module 30 and is thermally coupled to the molded bus bar 40, and the protrusion 281 is arranged between the root 275 of the exposed portion of the first negative terminal portion 271 exposed from the resin portion 44 and the root 275 of the exposed portion of the second negative terminal portion 271 exposed from the resin portion 44. Therefore, the spatial distance and creepage distance from the root 275 of the negative terminal portion 271 of the negative bus bar 41 exposed from the resin portion 44 to the power semiconductor module 30 can be increased. That is, by increasing the spatial distance and creepage distance between the exposed portion of the molded bus bar 40 exposed from the resin portion 44 and the power semiconductor module 30, the temperature rise of the capacitor can be suppressed. Thereby, the amount of heat transferred from the power semiconductor module 30 to the molded bus bar 40 can be reduced, and the capacitor element 501 connected to the molded bus bar 40 can be suppressed from becoming hot.

[0099] (2) A space is provided between the upper surface 257 of the power semiconductor module 30 and the molded bus bar 40 . This can increase the spatial distance and creepage distance from the root 275 of the negative-electrode terminal portion 271 exposed from the resin portion 44 to the power semiconductor module 30 .

[0100] (3) The molded bus bar 40 includes the AC side bus bar 43, and in the top view viewed from above the protrusion 281, the protrusion 281 overlaps with a portion of the AC side bus bar 43. In this way, the AC side terminal portion 273 of the AC side bus bar 43 is also formed in the same manner as the negative side terminal portion 271 of the negative side bus bar 41. Therefore, the heat transferred from the power semiconductor module 30 to the AC side bus bar 43 of the molded bus bar 40 can be reduced, and the capacitor element 501 connected to the molded bus bar 40 can be suppressed from becoming high temperature.

[0101] (4) A relay AC bus bar 61 connected to the AC side bus bar 43 is further provided, and the relay AC bus bar 61 is thermally coupled to the housing 252. Therefore, heat generated by external devices such as the motor generator 192 connected to the relay AC bus bar 61 is cooled by the cooling structure via the housing 252 thermally coupled to the relay AC bus bar 61, thereby preventing electronic components in the power conversion device 200 such as the capacitor module 500 connected to the molded bus bar 40 from becoming hot.

[0102] In the above-mentioned embodiment, the positive electrode side bus bar 42, the negative electrode side bus bar 41, and the AC side bus bar 43 are exemplified as molded bus bars 40 that are insert molded in the resin portion 44. However, the positive electrode side bus bar 42, the negative electrode side bus bar 41, and the AC side bus bar 43 may be fixed to the resin portion 44 by fastening members such as screws and pins instead of insert molding.

[0103] In the above embodiment, the power conversion circuit includes six power semiconductor modules 30 functioning as a three-phase arm circuit. However, the present invention can be applied to a power conversion device 200 including one power semiconductor module 30 or three power semiconductor modules 30.

[0104] In the above embodiment, an inverter device using IGBTs 328 and 330 is exemplified as the power conversion device 200. However, the present invention may be applied to an inverter circuit using thyristors, GTOs (Gate Turn Off Thyristors), etc. instead of the IGBTs 328 and 330.

[0105] Furthermore, the present invention is not only applicable to inverter devices that perform DC-AC conversion, but can also be applied to other power conversion devices such as matrix converters that perform AC-AC conversion.

[0106] The present invention is not limited to the above-described embodiments, and other embodiments that can be considered within the scope of the technical concept of the present invention are also included in the scope of the present invention.

[0107] Description of symbols

[0108] 30 Power semiconductor modules

[0109] 30a First power semiconductor module

[0110] 30b Second power semiconductor module

[0111] 40 Molded busbar (connecting component)

[0112] 41 Negative side bus bar (connecting conductor)

[0113] 42 Positive side bus bar (connecting conductor)

[0114] 43 AC side busbar (connecting conductor)

[0115] 44 Resin Department

[0116] 50Metal components

[0117] 200 Power conversion device

[0118] 211 DC negative side connecting conductor

[0119] 221 DC positive side connecting conductor

[0120] 231 AC output side connecting conductor

[0121] 241 Relay AC connecting conductor

[0122] 252 Shell

[0123] 252b Divider

[0124] 257 Upper surface (one side)

[0125] 271 Negative terminal

[0126] 272 positive terminal

[0127] 273 AC side terminal

[0128] 275 roots

[0129] 281 Protrusion

[0130] 500 capacitor modules

[0131] 501 capacitor element (capacitor)

[0132] 601 semiconductor module housing

[0133] 602 capacitor module receiving part

[0134] C1 spatial distance

[0135] Cr1 creepage distance

[0136] Cr2 creepage distance.

Claims

1. A power conversion device, characterized in that: include: Capacitors; A first power semiconductor module and a second power semiconductor module each having an input terminal or an output terminal protruding from one surface; a housing having a capacitor receiving portion for receiving the capacitor, a semiconductor module receiving portion for receiving the first power semiconductor module and the second power semiconductor module, and a partition provided between the first power semiconductor module and the second power semiconductor module; as well as a connecting member in which a resin portion and a connecting conductor are integrally provided, and the connecting member is arranged on the one surface of the first power semiconductor module and the second power semiconductor module, The connection conductor has a capacitor connection portion connected to the capacitor, a first terminal portion exposed from the resin portion and connected to the terminal of the first power semiconductor module, and a second terminal portion exposed from the resin portion and connected to the terminal of the second power semiconductor module. The partition of the housing is provided with a protrusion, the protrusion protruding toward the connection member side from the one surface of the first power semiconductor module and the second power semiconductor module and thermally coupled to the connection member, The protrusion is thermally coupled to the connection member and is disposed between a first base portion of a portion where the first terminal portion is exposed from the resin portion and a second base portion of a portion where the second terminal portion is exposed from the resin portion.

2. The power conversion device according to claim 1, characterized in that: A space is provided between the one surface of the first power semiconductor module and the second power semiconductor module and the connecting member.

3. The power conversion device according to claim 2, characterized in that: further comprising a metal member disposed on the one surface of the first power semiconductor module and the second power semiconductor module, The space is provided between the metal member and the connecting member.

4. The power conversion device according to claim 1, characterized in that: The connecting conductors include a DC positive electrode side connecting conductor and a DC negative electrode side connecting conductor. The protrusion overlaps a portion of the DC positive electrode side connection conductor or a portion of the DC negative electrode side connection conductor in a plan view viewed from above the protrusion.

5. The power conversion device according to claim 1, characterized in that: The connecting conductors include AC output side connecting conductors, The protrusion overlaps a portion of the AC output-side connection conductor in a plan view viewed from above the protrusion.

6. The power conversion device according to claim 5, characterized in that: It also includes a relay AC connection conductor connected to the AC output side connection conductor, The relay AC connection conductor is thermally coupled to the housing.

7. A method for manufacturing a power conversion device, characterized in that: include: A capacitor is accommodated in a capacitor accommodation portion of a housing, and a first power semiconductor module and a second power semiconductor module are accommodated on both sides of a partition portion of the housing in a semiconductor module accommodation portion of the housing provided with the partition portion, the first power semiconductor module and the second power semiconductor module respectively having an input terminal or an output terminal protruding from one side; as well as a connecting member disposed on the one surface of the first power semiconductor module and the second power semiconductor module, wherein a resin portion and a connecting conductor are integrally provided in the connecting member, wherein the connecting conductor has a capacitor connecting portion connected to the capacitor, and wherein the connecting conductor has a first terminal portion exposed from the resin portion and connected to the terminal of the first power semiconductor module and a second terminal portion exposed from the resin portion and connected to the terminal of the second power semiconductor module, The partition portion is provided with a protrusion, the protrusion protruding toward the connection member side from the one surface of the first power semiconductor module and the second power semiconductor module and thermally coupled to the connection member, The step of configuring the connecting member on the one side of the first power semiconductor module and the second power semiconductor module includes configuring the protrusion between a first root of an exposed portion of the first terminal portion exposed from the resin portion and a second root of an exposed portion of the second terminal portion exposed from the resin portion, and thermally coupling the protrusion to the connecting member.

Images