Optical imaging device

Abstract

An embodiment of the present invention provides an optical imaging device, which includes a first detection unit. The first detection unit includes a plurality of first pixels, a first opaque layer and at least one first microlens. The plurality of first pixels have a plurality of first photoelectric elements. The first opaque layer has at least one opening and is disposed above the plurality of first photoelectric elements. The at least one first microlens is disposed above the first opaque layer. The at least one first microlens overlaps with at least one of the plurality of first pixels. The optical imaging device of the embodiment of the present invention can reduce the size of a chip on which the optical imaging device is disposed.

Description

Technical Field

[0001] Embodiments of the present invention relate to an optical imaging device, and more particularly to an optical imaging device that provides a smaller chip size and is used in an optical fingerprint sensor. Background Art

[0002] Biometric technology has become quite popular in recent years. One type of biometric system is the fingerprint recognition system. The fingerprint recognition system has an optical fingerprint sensor to capture the user's fingerprint to authenticate the user's identity and decide whether to allow the user to access the device with the fingerprint recognition system built in. The fingerprint recognition system can also be used to control access to various mobile devices such as mobile phones, wearable electronic devices (such as smart watches), tablets, etc. in a reliable and non-invasive manner.

[0003] Existing optical fingerprint sensors have a light source to illuminate the sensing area touched by the finger, and use an image sensor array to receive reflected light from the sensing area. The light reflected from the ridges of the finger has different intensities than the light reflected from the valleys of the finger. Therefore, the image sensor array can obtain accurate images of the ridges, valleys and other features of the finger.

[0004] Conventional optical fingerprint sensors provide systems with a large number of optical elements, such as beam splitters, collimators, focusing mirrors, and linear sensors. Although conventional optical fingerprint sensors are adequate for their designed purposes, they are not completely satisfactory in all respects.

[0005] For example, each image detector in a conventional optical fingerprint sensor receives light reflected from the sensing area directly above it via a corresponding collimator. As a result, the area of ​​the sensor active area provided by the chip in the conventional optical fingerprint sensor is the same as the area of ​​the fingerprint being detected. The manufacturing cost of the sensor is mainly determined by the chip area. Therefore, it is worth exploring to provide an improvement solution for the chip with an optical fingerprint sensor. Summary of the invention

[0006] One embodiment of the present invention provides an optical imaging device, which includes a substrate, an opaque layer stack and a plurality of detection units. The opaque layer stack includes a first opaque layer and a second opaque layer, the first opaque layer is above the substrate, and the second opaque layer is above the first opaque layer. In a top view of a stack of the substrate and the opaque layer stack, the plurality of detection units are shown to be arranged in an array. The plurality of detection units each include: a first photoelectric element, a second photoelectric element, a third photoelectric element and a fourth photoelectric element, each disposed on the substrate and separated from each other; four first openings, in the first transparent layer, respectively exposing the first to fourth photoelectric elements; and a second opening, in the second opaque layer, the second opening is configured to form a first optical channel connected to the first photoelectric element, a second optical channel connected to the second photoelectric element, a third optical channel connected to the third photoelectric element and a fourth optical channel connected to the fourth photoelectric element.

[0007] One embodiment of the present invention provides an optical imaging device, which includes a first detection unit. The first detection unit includes a plurality of first pixels, a first opaque layer and at least one first microlens. The plurality of first pixels have a plurality of first photoelectric elements. The first opaque layer has at least one opening and is arranged above the plurality of first photoelectric elements. The at least one first microlens is arranged above the first opaque layer. The at least one first microlens overlaps at least one of the plurality of first pixels.

[0008] One embodiment of the present invention provides an optical imaging device, which includes a substrate, an opaque layer having a plurality of first openings, and a microlens layer. The substrate includes a plurality of photoelectric elements, and the plurality of photoelectric elements are disposed in the substrate and separated from each other. The first opaque layer is disposed above the substrate. The plurality of first openings are separated from each other. The microlens layer includes a plurality of microlenses and is above the first opaque layer. In a top view of a stack of the substrate, the first opaque layer, and the microlens layer, one of the plurality of photoelectric elements, one of the plurality of first openings, and one of the plurality of microlenses are arranged in a substantially straight line.

[0009] One embodiment of the present invention provides an optical imaging device, which includes a substrate, an opaque layer stack, a plurality of internal detection units, and a plurality of peripheral detection units. The opaque layer stack includes a first opaque layer, a second opaque layer, and a third opaque layer, the first opaque layer is above the substrate, the second opaque layer is above the first opaque layer, and the third opaque layer is above the second opaque layer. In a top view of a stack of the substrate and the opaque layer stack, the plurality of internal detection units are shown to be arranged in an array. In the top view, the plurality of peripheral detection units are shown to surround the array. The plurality of internal detection units and the plurality of peripheral detection units each include: a first photoelectric element, a second photoelectric element, a third photoelectric element and a fourth photoelectric element, which are disposed on the substrate and spaced apart from each other, and the top view shows that the fourth photoelectric element is farther from the center of the array than the first photoelectric element; at least one first opening in the first transparent layer, exposing at least the first photoelectric element; at least one second opening in the second opaque layer; and a third opening in the third opaque layer, a microlens embedded in the third opening. The plurality of internal detection units each include four first openings in the first opaque layer to expose the first to fourth photoelectric elements respectively. The plurality of internal detection units each include four second openings spaced apart from each other in the second opaque layer. Each of the plurality of peripheral detection units is configured to form a first optical channel connecting the microlens to the first photoelectric element via the second opening. Each of the multiple internal detection units is configured to form a first optical channel extending from the lens through the first of the second openings to the first photoelectric element, a second optical channel extending from the lens through the second of the second openings to the second photoelectric element, a third optical channel extending from the lens through the third of the second openings to the third photoelectric element, and a fourth optical channel extending from the lens through the fourth of the second openings to the fourth photoelectric element.

[0010] In addition, one embodiment of the present invention provides an optical imaging device, which includes a substrate, an opaque layer stack, a plurality of internal detection units, and a plurality of peripheral detection units. The opaque layer stack includes a first opaque layer, a second opaque layer, and a third opaque layer, the first opaque layer is above the substrate, the second opaque layer is above the first opaque layer, and the third opaque layer is above the second opaque layer. In a top view of a stack of the substrate and the opaque layer stack, the plurality of internal detection units are shown to be arranged in an array. In the top view, the plurality of peripheral detection units are shown to surround the array. The above-mentioned multiple internal detection units and the above-mentioned multiple peripheral detection units each include: a first photoelectric element, a second photoelectric element, a third photoelectric element and a fourth photoelectric element, which are arranged on the above-mentioned substrate and separated from each other, and the above-mentioned top view shows that the fourth photoelectric element is farther from the center of the above-mentioned array than the first photoelectric element, and the third photoelectric element is farther from the center of the above-mentioned array than the second photoelectric element; at least one first opening in the above-mentioned first transparent layer, exposing at least the above-mentioned first photoelectric element; at least one second opening in the above-mentioned second opaque layer; and a third opening in the above-mentioned third opaque layer, a microlens embedded in the above-mentioned third opening. The above-mentioned multiple internal detection units each include four of the above-mentioned first openings in the above-mentioned first opaque layer to expose the above-mentioned first to fourth photoelectric elements respectively. The above-mentioned multiple internal detection units each include four of the above-mentioned second openings separated from each other in the above-mentioned second opaque layer. Each of the multiple internal detection units is configured to form a first optical channel extending from the lens through the first of the second openings to the first photoelectric element, a second optical channel extending from the lens through the second of the second openings to the second photoelectric element, a third optical channel extending from the lens through the third of the second openings to the third photoelectric element, and a fourth optical channel extending from the lens through the fourth of the second openings to the fourth photoelectric element. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The various aspects of the present invention are best understood by reading the detailed description and examples below in conjunction with the accompanying drawings.

[0012] Figure 1 A side view is shown schematically illustrating an embodiment of an optical imaging device applied to an optical fingerprint sensor according to the present disclosure.

[0013] Figure 2A A top view is shown schematically illustrating an embodiment of an optical imaging device disclosed in accordance with the present invention.

[0014] Figure 2B Display along Figure 2A Cross-sectional view of line BB.

[0015] Figure 2C Display along Figure 2A Cross-sectional view of the CC line.

[0016] Figure 3A The advantageous effects provided by the embodiments of the optical imaging device disclosed in the present invention are schematically illustrated.

[0017] Figure 3B The advantageous effects provided by the embodiments of the optical imaging device disclosed in the present invention are schematically illustrated.

[0018] Figure 4A The advantageous effects provided by the embodiments of the optical imaging device disclosed in the present invention are schematically illustrated.

[0019] Figure 4B The advantageous effects provided by the embodiments of the optical imaging device disclosed in the present invention are schematically illustrated.

[0020] Figure 5A A top view is shown schematically illustrating some other embodiments of an optical imaging device disclosed according to the present invention.

[0021] Figure 5B Display along Figure 5A Cross-sectional view of line BB.

[0022] Figure 5C Display along Figure 5A Cross-sectional view of the CC line.

[0023] Fig. 6A A top view is shown schematically illustrating some other embodiments of an optical imaging device disclosed according to the present invention.

[0024] Figure 6B Display along Fig. 6A Cross-sectional view of line B2-B2 and line B3-B3.

[0025] Figure 6C Display along Fig. 6A Cross-sectional view of the CC line.

[0026] Figure 7 A top view is shown schematically illustrating some other embodiments of an optical imaging device disclosed according to the present invention.

[0027] Figure 8 A top view is shown schematically illustrating some other embodiments of an optical imaging device disclosed according to the present invention.

[0028] Fig. 9AA top view is shown schematically illustrating some other embodiments of an optical imaging device disclosed according to the present invention.

[0029] Fig. 9B Display along Fig. 9A Cross-sectional view of line BB.

[0030] Fig. 10A A top view is shown schematically illustrating some other embodiments of an optical imaging device disclosed according to the present invention.

[0031] Fig. 10B show Fig. 10A A partial top view of the optical imaging device is shown.

[0032] Fig. 10C show Fig. 10A A partial top view of the optical imaging device is shown.

[0033] Fig. 10D show Fig. 10A A partial top view of the optical imaging device is shown.

[0034] Fig.10E Display along Fig. 10C and Fig. 10D Cross-sectional view of line BB.

[0035] Fig.10F Display along Fig. 10C and Fig. 10D The cross-sectional view along line CC of the figure.

[0036] Figure 10G show Fig. 10A A partial top view of the optical imaging device is shown.

[0037] Fig. 10H Display along Figure 10G Cross-sectional view of line BB.

[0038] Fig.10I Display along Figure 10G Cross-sectional view of the CC line.

[0039] The following are the descriptions of the reference numerals:

[0040] 1,2,3,4,201,202,203,204: Photoelectric components

[0041] 10,210: Base

[0042] 11,211:Multilayer filter

[0043] 12,212: Interconnection structure

[0044] 20,30,40,75,95,220,230,240: Opaque layer

[0045] 22,41,76,222,241: Open

[0046] 31,32,33,34,231: Open

[0047] 40A,42A,95A,95B,95C,95D,240A:Microlens

[0048] 50,250:Detection unit

[0049] 51,259: Internal detection unit

[0050] 52,52X,52Y,256X,256Y,257X,257Y: Edge detection unit

[0051] 53,251,252,253,254: Corner detection unit

[0052] 55,255: Peripheral detection unit

[0053] 61,261: First optical channel

[0054] 62,262: Second optical channel

[0055] 63,263: The third optical channel

[0056] 64,264: The fourth optical channel

[0057] 61A, 62A, 63A, 64A: Extension direction

[0058] 71,72,271,272: Transparent layer

[0059] 80: Light

[0060] 100,500,600,700,800,900,1200: Optical imaging device

[0061] 250A,250B:Group

[0062] 300: Cover

[0063] 310: Sensor action area

[0064] 311,312,313,314: Sub-view

[0065] 320,330: Field of view

[0066] 350:Fingers

[0067] 400: Complete fingerprint image

[0068] 401,402,403,404: Fingerprint images

[0069] 501,502,503,504,571,572,573,574,575: pixels

[0070] 581,582,583,584,585,591,592,573,594,595: pixels

[0071] 1000: Organic Light Emitting Diode Display System DETAILED DESCRIPTION

[0072] The following detailed description of the invention is intended to describe the overall content of the invention rather than to limit the invention. The scope of protection of the invention should be determined by the claims set forth below.

[0073] In addition, the drawings in different embodiments may use similar and / or related numbers or labels (element symbols) to clearly describe the embodiments of the present invention, which does not represent any relationship between the different embodiments and / or structures discussed. Furthermore, when it is mentioned herein that, for example, "a first material layer is located on or above a second material layer", it includes the situation where the first material layer is in direct contact with the second material layer; or, there may be one or more intermediate material layers between the first material layer and the second material layer, in which case, the first material layer and the second material layer may not be in direct contact.

[0074] It is understood that, although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different elements, components, regions, layers and / or parts. Therefore, a first element, component, region, layer and / or part discussed below may be referred to as a second element, component, region, layer and / or part without departing from the teachings of some embodiments of the present invention.

[0075] In the following invention description, for example, "substantially geometric center", "substantially opposite direction", "substantially flat", "substantially the same", etc., refer to the design expectation of actually being the geometric center, opposite direction, flat, the same, etc., but in reality, due to factors such as actual process limitations, the result does not achieve the mathematical or theoretical "geometric center", "opposite direction", "flat", "same", etc., and when the range of the difference falls within the specific range specified by the corresponding standard or specification, it is regarded as "geometric center", "opposite direction", "flat", "same", etc. Ordinary technicians in the technical field to which the present invention belongs should understand that the above-mentioned corresponding standards or specifications will be different according to different properties, conditions, requirements, etc., so no specific standards or specifications are listed below.

[0076] Figure 1 A side view is shown schematically illustrating an embodiment of an optical imaging device 100 applied to an optical fingerprint sensor according to the present disclosure.

[0077] The optical fingerprint sensor includes an optical imaging device 100 and a cover 300 on the optical imaging device 100. In some embodiments, the cover 300 includes an active light-emitting device such as organic light-emitting diodes (OLEDs), perovskite quantum dots, or the like. The surface of the finger 350 having the fingerprint is illuminated by light from the active light-emitting device, which reflects the light to the optical imaging device 100. The optical fingerprint sensor receives and detects the light reflected by the ridges and valleys of the finger 350, and then converts the light signal into an electrical signal, and then forms an image of the fingerprint of the finger 350. Embodiments of the optical imaging device 100 can provide an expanded field of view (FOV), so the area of ​​the sensor active area is smaller than the area of ​​the fingerprint of the finger 350 being detected. In some embodiments, the optical fingerprint sensor including the optical imaging device 100 and the cover 300 is used in an organic light-emitting diode display system 1000.

[0078] Figure 2A A top view is shown schematically showing an embodiment of an optical imaging device 100 disclosed in accordance with the present invention. The optical imaging device 100 includes a plurality of detection units 50. In some embodiments, the plurality of detection units 50 are as follows: Figure 2A As shown, they are arranged in an array. Figure 2A In the above-mentioned array, the detection units 50 are representatively shown near and around the center C of the above-mentioned array. In some embodiments, the array of detection units 50 is as follows Figure 2A50 is shown as a rectangle, while the detection unit 50 may be a rectangle. In some other embodiments, the array of detection units 50 is a polygon, while the detection unit 50 may be a polygon. In some embodiments, the center C is the geometric center or the substantial geometric center of the array of detection units 50. In other embodiments, the center C is a given reference point for the array of detection units 50, but it is still referred to as the "center" in this specification. Figure 2B Display along Figure 2A A cross-sectional view of the optical imaging device 100 taken along line BB. Figure 2C Display along Figure 2A A cross-sectional view of the optical imaging device 100 taken along line CC.

[0079] Please refer to Figure 2A , 2B 2C, the optical imaging device 100 includes a plurality of detection units 50, and the plurality of detection units 50 include a substrate 10 and an opaque layer stack on the substrate 10. The opaque layer stack includes an opaque layer 20 and an opaque layer 40, the opaque layer 20 is on the substrate 10, and the opaque layer 40 is on the opaque layer 20.

[0080] The substrate 10 may include, but is not limited to, a semiconductor substrate, such as a silicon substrate. In addition, the substrate 10 may include: elemental semiconductors, including germanium; compound semiconductors, including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide; alloy semiconductors, including silicon germanium alloy (SiGe), gallium arsenide phosphide alloy (GaAsP), aluminum indium arsenide alloy (AlInAs), aluminum gallium arsenide alloy (AlGaAs), indium gallium arsenide alloy (GaInAs), gallium indium phosphide alloy (GaInP), and / or gallium indium arsenide phosphide alloy (GaInAsP), or a combination of the above materials. In addition, the substrate 10 may include a semiconductor on insulator (SOI).

[0081] like Figure 2A , 2BAs shown in FIG2C , in some embodiments, at least one of the detection units 50 includes a plurality of pixels 501, 502, 503, and 504, an opaque layer 30, and a microlens 40A. The plurality of pixels 501, 502, 503, and 504 are each formed in the substrate 10. The plurality of pixels 501, 502, 503, and 504 have a plurality of, for example, first to fourth photoelectric elements 1, 2, 3, and 4, respectively. The opaque layer 30 has openings 31, 32, 33, and 34, and is disposed above the plurality of photoelectric elements 1, 2, 3, and 4. The microlens 40A overlaps at least one of the plurality of pixels 501, 502, 503, and 504. In the illustrated embodiment, the microlens 40A overlaps the plurality of pixels 501, 502, 503, and 504. In some embodiments, the plurality of optoelectronic elements 1 , 2 , 3 , and 4 , the openings 31 , 32 , 33 , and 34 , and the microlens 40A are configured to propagate light from the microlens 40A to the plurality of optoelectronic elements 1 , 2 , 3 , and 4 .

[0082] like Figure 2A , 2B As shown in 2C, in some embodiments, the detection units 50 each include photoelectric elements 1, 2, 3 and 4, each disposed on the substrate 10 and spaced apart from each other. The detection units 50 also each include four openings 22 in the transparent layer 20 and one opening 41 in the opaque layer 40. In each detection unit 50, the four openings 22 expose the photoelectric elements 1, 2, 3 and 4, respectively. The opening 41 is formed in the opaque layer 40, and the opening 41 is configured to form a first optical channel 61 connected to the photoelectric element 1, a second optical channel 62 connected to the photoelectric element 2, a third optical channel 63 connected to the photoelectric element 3, and a fourth optical channel 64 connected to the photoelectric element 4.

[0083] Specifically, if Figure 2B and 2C As shown, the first optical channel 61 guides the light 80 from the opening 41 to the photoelectric element 1 exposed by the first opening 22, so that the light 80 passing through the first optical channel 61 is received and detected by the photoelectric element 1. Similarly, the second optical channel 62 guides the light 80 from the opening 41 to the photoelectric element 2 exposed by the second opening 22, so that the light 80 passing through the second optical channel 62 is received and detected by the photoelectric element 2. Similarly, the third optical channel 63 guides the light 80 from the opening 41 to the photoelectric element 3 exposed by the third opening 22, so that the light 80 passing through the third optical channel 63 is received and detected by the photoelectric element 3. Similarly, the fourth optical channel 64 guides the light 80 from the opening 41 to the photoelectric element 4 exposed by the fourth opening 22, so that the light 80 passing through the fourth optical channel 64 is received and detected by the photoelectric element 4. The light 80 is generated by the following steps: Figure 1The optical imaging device 100 is shown as a fingerprint device 350. When incident light 80 having sufficient energy strikes photoelectric elements 1, 2, 3 and 4, it generates electron-hole pairs and generates photocurrent as an electrical signal of the image of the fingerprint of the finger 350. In each detection unit 50, a common opening 41 is used to guide the light 80 to the photoelectric elements 1, 2, 3 and 4, so that the photoelectric elements 1, 2, 3 and 4 receive the obliquely incident light. As a result, the optical imaging device 100 can have an expanded field of view, and the size of the chip provided with the optical imaging device 100 can be reduced. When Figure 1 As shown, the optical fingerprint sensor including the optical imaging device 100 is used in the organic light emitting diode display system 1000. The optical imaging device 100 receiving oblique incident light is helpful to collect a wide-angle fingerprint image. The details of the optical imaging device 100 expanding the field of view will be described later.

[0084] In some embodiments, the opaque layer 20 is a metal layer, which is patterned to form the four openings 22. In other embodiments, the opaque layer 20 is a single layer or multi-layer structure formed of one or more opaque materials other than metals. In some embodiments, the opaque layer 40 is a single layer or multi-layer structure formed of one or more polymer opaque materials, which is patterned to form the openings 41. In this embodiment, a metal layer as the opaque layer 20 is formed on the substrate 10, and then the metal layer is subjected to a patterning process to form the four openings 22 in the opaque layer 20, and then a photosensitive layer such as a photoresist is formed on the patterned opaque layer 20, and then it is exposed to a light source to form a patterned opaque layer 40 with the openings 41. The photoresist is a negative photoresist or a positive photoresist. Regarding the negative photoresist, the area of ​​the negative photoresist becomes insoluble after being irradiated by a light source, and in a subsequent development stage, a solvent is used to act on the negative photoresist to remove the unexposed area. Therefore, the pattern formed on the negative photoresist is the reverse pattern of the pattern defined by the opaque area of ​​a template between the light source and the negative photoresist. In a positive photoresist, the illuminated area of ​​the positive photoresist becomes soluble and is removed by a solvent during the development process. Therefore, the pattern formed on the positive photoresist is the positive pattern of the pattern defined by the opaque area of ​​a template between the light source and the positive photoresist.

[0085] In some embodiments, one or more layers of transparent material (for example, transparent to visible light) are formed between the opaque layer 20 and the opaque layer 40, such as Figure 2B and 2C A transparent layer 71 and a transparent layer 72 are shown to adjust the incident angle of light incident on the photoelectric elements 1, 2, 3 and 4. In addition, the incident angle of light incident on the photoelectric elements 1, 2, 3 and 4 can also be adjusted by changing the top view. Figure 2A The respective distances from the photoelectric elements 1, 2, 3 and 4 to the opening 41 are used to adjust the incident angles of the light incident to the photoelectric elements 1, 2, 3 and 4. In some embodiments, the incident angles of the light incident to the photoelectric elements 1, 2, 3 and 4 are respectively in the range of greater than zero degrees to 30 degrees. In some embodiments, the incident angles of the light incident to the photoelectric elements 1, 2, 3 and 4 are respectively in the range of greater than zero degrees to 40 degrees.

[0086] like Figure 2B and 2C As shown, in some embodiments, the opaque stack further includes an opaque layer 30 between the opaque layer 20 and the opaque layer 40, and each detection unit 50 further includes four mutually spaced openings 31, 32, 33 and 34 in the opaque layer 30. In such an embodiment, preferably, each detection unit 50 further includes a micro lens 40A embedded in the opening 41. The micro lens 40A has a substantially flat bottom surface and a curved top surface, the top surface being convex to be touched by the finger 350 (shown in FIG. Figure 1 ) is focused, and the focused light is guided to the photoelectric elements 1, 2, 3 and 4 through the openings 31, 32, 33 and 34, respectively, so as to increase the light collection efficiency of the optical imaging device 100. In such an embodiment, the first light channel 61 extends from the microlens 40A and guides the light 80 to the photoelectric element 1 through the opening 31, the second light channel 62 extends from the microlens 40A and guides the light 80 to the photoelectric element 2 through the opening 32, the third light channel 63 extends from the microlens 40A and guides the light 80 to the photoelectric element 3 through the opening 33, and the fourth light channel 64 extends from the microlens 40A and guides the light 80 to the photoelectric element 4 through the opening 34.

[0087] In some embodiments, the opaque layer 30 is a single layer or multilayer structure formed of one or more polymer opaque materials, which are patterned to form openings 31, 32, 33 and 34 therein. In some embodiments, the one or more polymer opaque materials of the opaque layer 30 are substantially the same as the one or more polymer opaque materials of the opaque layer 40. In other embodiments, the one or more polymer opaque materials of the opaque layer 30 are different from the one or more polymer opaque materials of the opaque layer 40. In some embodiments, after the opaque layer 20 is formed and patterned to form four openings 22 therein, a photosensitive layer such as a photoresist is formed on the patterned opaque layer 20, which is then exposed to a light source to form a patterned opaque layer 30 having openings 31, 32, 33 and 34, and then an opaque layer 40 is formed on the opaque layer 30 and patterned as described above. As described above, the photoresist layer used to form the opaque layer 40 is also a negative photoresist or a positive photoresist.

[0088] Depending on the needs, Figure 2B and 2C In at least one of the transparent layer 71 and the transparent layer 72 shown in the embodiment, the transparent layer 71 can be formed between the opaque layer 20 and the opaque layer 30 as needed and / or the transparent layer 72 can be formed between the opaque layer 30 and the opaque layer 40 as needed.

[0089] In some embodiments, in each detection unit 50, a lens material transparent to visible light may be deposited in the opening 41 to form a microlens 40A (for example, by a spin coating method or a deposition process). A microlens template having a curved upper surface is patterned above the lens material. In some embodiments, the microlens template may include a photoresist material, which is exposed to a specific distribution of exposure doses (for example, for a negative photoresist, the bottom of the curved surface is exposed to a larger amount of light, and the top of the curved surface is exposed to a smaller amount of light), and is developed and baked to form a rounded shape. Then, the microlens material is selectively etched according to the microlens template to form the microlens 40A.

[0090] In some embodiments, the photoelectric elements 1, 2, 3 and 4 in each detection unit 50 are CMOS (Complementary Metal-Oxide-Semiconductor) image sensors, which include an optical diode electrically connected to a transistor, and the transistor is electrically connected to an interconnection structure 12. In some embodiments, the optical diode is an organic optical diode.

[0091] The optical imaging device 100 can be front-side illuminated (FSI) or back-side illuminated (BSI). When the optical imaging device 100 is front-side illuminated, an interconnection structure is disposed above the opaque layer 20. A portion of the light incident on the photoelectric elements 1, 2, 3, and 4 is blocked by the interconnection structure and is subject to more destructive interference due to the interconnection structure. Figure 2B and 2C In the embodiment of the present invention, the optical imaging device 100 is back-illuminated and has an interconnection structure 12 disposed below the substrate 10, so that the light 80 directly illuminates the photoelectric elements 1, 2, 3 and 4 in each detection unit 50. As a result, the optical imaging device 100 is preferably back-illuminated to reduce destructive interference and provide better quantum efficiency. In addition, as described above, the photoelectric elements 1, 2, 3 and 4 in each detection unit 50 of the optical imaging device 100 receive obliquely incident light. When the optical imaging device 100 is back-illuminated, the optical imaging device 100 can have better sensitivity to obliquely incident light 80 compared to a front-illuminated device.

[0092] In some embodiments, the interconnect structure 12 includes a plurality of metal interconnect layers, which are formed in a dielectric structure, and the dielectric structure is formed below the substrate 10. In some embodiments, the formation of the plurality of metal interconnect layers can be by: forming an inter-layer dielectric (ILD) layer below the substrate 10; then etching the inter-layer dielectric layer to form a plurality of vias and / or trenches; and then filling the vias and / or trenches with a conductor material to form one or more metal interconnect layers. In some embodiments, the inter-layer dielectric layer can be formed by physical vapor deposition or chemical vapor deposition techniques. The plurality of metal interconnect layers can be formed by using a deposition process and / or a plating process (for example, electroplating, electroless plating, etc.). In various embodiments, the plurality of metal interconnect layers can include, for example, tungsten, copper, or an aluminum-copper alloy.

[0093] In some embodiments, the optical imaging device 100 further includes a multilayer filter 11, and the multilayer filter 11 is disposed between the opaque layer 20 and the opaque layer 40. In an embodiment in which an opaque layer 30 is formed, the multilayer filter 11 is disposed between the opaque layer 20 and the opaque layer 30. In an embodiment in which a transparent layer 71 is formed, the multilayer filter 11 is disposed between the opaque layer 20 and the transparent layer 71. In some embodiments, the multilayer filter 11 is an interference filter and may include a dielectric material or an inorganic material. The above-mentioned material may include TiO2, HfO2, NbTiO5, SiO2, other appropriate materials, or a combination thereof. The multilayer filter 11 may be formed by a deposition process, an etching process, a photolithography process, other appropriate processes, or a combination thereof. The multilayer filter 11 is provided to block light having a specific wavelength. In this embodiment, the multilayer filter 11 is provided to block infrared rays and prevent them from entering the photoelectric elements 1, 2, 3, and 4 to increase the sensitivity to the fingerprint to be detected. The infrared rays may come from sunlight, from finger 350 (shown in FIG. Figure 1 )'s thermal radiation, etc.

[0094] Figure 2A A top view is shown, which schematically illustrates an embodiment of the optical imaging device 100 disclosed in accordance with the present invention. A rectangular coordinate system is introduced in this figure to assist in the display of the optical imaging device 100 and the definition of some elements of the optical imaging device 100. Specifically, Figure 2A A top view of a stack is shown, the stack comprising a substrate 10 (shown in Figure 2B and 2C ) and an opaque layer 20 (shown in Figure 2B and 2C ), the opaque layer 40 (shown in Figure 2B and 2C ) and the opaque layer 30 (shown in Figure 2B and 2C The plurality of detection units 50 are arranged in an array, such as Figure 2A A rectangular coordinate system provides an X-axis and a Y-axis, which intersect at the center C of the array of detection units 50, and as shown in FIG. Figure 2A As shown, the arrangement of the detection units 50 is divided into quadrant I, quadrant II, quadrant III and quadrant IV.

[0095] Please refer to Figure 2AAs described above, in each detection unit 50, the photoelectric elements 1, 2, 3 and 4 are respectively arranged in the substrate 10 and separated from each other, and four openings 22 are arranged in the opaque layer 20 to expose the photoelectric elements 1, 2, 3 and 4 respectively. In the present embodiment, it is illustrated that each detection unit 50 has four photoelectric elements and the same or corresponding number of other elements, which is only for the purpose of explanation and is not intended to be limiting. Any appropriate number of photoelectric elements can be set in each detection unit 50 as required. In some embodiments, each detection unit 50 is divided into a plurality of pixels, and the number of pixels in each detection unit 50 is greater than or equal to the number of photoelectric elements, and the above-mentioned photoelectric elements are respectively placed in different pixels.

[0096] exist Figure 2A , among the four photoelectric elements of each detection unit 50, the ones closest to and farthest from the center C of the array are defined as photoelectric elements 1 and 4, respectively. Among the other two photoelectric elements of each detection unit 50, the one closer to the X-axis (and / or farther from the Y-axis) and the one closer to the Y-axis (and / or farther from the X-axis) are defined as photoelectric elements 2 and 3, respectively. In some embodiments, the distribution of photoelectric elements 1, 2, 3, and 4 in the regions of quadrants I, II, III, and IV is symmetrical with respect to the X-axis, the Y-axis, or the center C. In the example shown in FIG. Figure 2A In the embodiment, each detection unit 50 is divided into four pixels arranged in a 2×2 array, and the photoelectric elements 1, 2, 3 and 4 are respectively placed in the four pixels. In each detection unit 50, the pixel where the photoelectric element 1 is located is pixel 501, the pixel where the photoelectric element 2 is located is pixel 502, the pixel where the photoelectric element 3 is located is pixel 503, and the pixel where the photoelectric element 4 is located is pixel 504.

[0097] exist Figure 2A In a representative detection unit 50, the extending directions of the first light channel 61, the second light channel 62, the third light channel 63 and the fourth light channel 64 in the top view of the stack of the substrate 10 and the above-mentioned opaque layer stack are represented by arrows. Figure 2A , the first light channel 61 and the fourth light channel 64 extend in substantially opposite directions, while the second light channel 62 and the third light channel 63 extend in substantially opposite directions. It should be noted that the arrows are only used to show the extension direction, rather than to represent the actual outline of the light channel. In other embodiments, the respective extension directions 61A, 62A, 63A and 64A of the first light channel 61, the second light channel 62, the third light channel 63 and the fourth light channel 64 can be appropriately distributed according to needs. In some embodiments, the angle between the extension direction 61A of the first light channel 61 and the parallel direction of the X-axis can be in the range between 0 degrees and less than 80 degrees, as shown in FIG. Figure 2AIn some embodiments, the angle between the extension direction 62A of the second optical channel 62 and the direction parallel to the X-axis can be in the range of 0 degrees to less than 80 degrees, as shown in FIG. Figure 2A In some embodiments, the angle between the extension direction 63A of the third optical channel 63 and the direction parallel to the X-axis can be in the range of 0 degrees to less than 80 degrees, as shown in FIG. Figure 2A In some embodiments, the angle between the extension direction 64A of the fourth optical channel 64 and the direction parallel to the X-axis can be in the range of 0 degrees to less than 80 degrees, as shown in FIG. Figure 2A An embodiment is about 45 degrees.

[0098] Figure 3A 3 is a side view schematically showing an expanded field of view provided by an embodiment of the optical imaging device disclosed in the present invention. The value "310" represents the sensor activation area of ​​the optical imaging device disclosed in the present invention. For example, the sensor activation area 310 may be a chip such as Figure 2A , 5A , 6A, 7, 8, 9A and 10A or its derivative variations. With respect to a conventional fingerprint sensor having a sensor active area identical to the sensor active area 310, the field of view provided is generally field of view 320, which has substantially the same area as the sensor active area of ​​the conventional fingerprint sensor. In contrast, the field of view provided by the optical imaging device disclosed in the present invention is field of view 330, which is significantly larger than field of view 320.

[0099] Figure 3B It is a top view showing how the field of view is expanded to field of view 330. Figure 4A Schematically shown as Figure 1 When the finger 350 is placed on the cover, the fingerprint image formed by the optical imaging device disclosed in the present invention is shown. Figures 2A to 2C The optical imaging device 100 is used as an example to explain the mechanism of expanding the field of view and forming a fingerprint image. Figure 5A , 6A , 7, 8, 9A and 10A or their derivative variations can also provide the same or similar performance.

[0100] exist Figure 3B And refer to Figure 2A, the sub-viewing field 311 is a combination of the viewing fields of the photoelectric element 1 (pixel 501) in quadrant I, the photoelectric element 2 (pixel 502) in quadrant II, the photoelectric element 4 (pixel 504) in quadrant III, and the photoelectric element 3 (pixel 503) in quadrant IV. The sub-viewing field 311 has substantially the same area as the sensor active area 310. The sub-viewing field 311 moves to the position shown in FIG. Figure 3B The upper right side of the sensor active area 310 is shown and above the sensor active area 310. Figure 3B And refer to Figure 2A Similarly, sub-field of view 312 is a combination of the fields of view of photoelectric element 2 (pixel 502) in quadrant I, photoelectric element 1 (pixel 501) in quadrant II, photoelectric element 3 (pixel 503) in quadrant III, and photoelectric element 4 (pixel 504) in quadrant IV. Sub-field of view 312 has substantially the same area as sensor active area 310. Sub-field of view 312 moves to the position shown in FIG. Figure 3B The upper left side of the sensor active area 310 is shown and above the sensor active area 310. Figure 3B And refer to Figure 2A Similarly, sub-field of view 313 is a combination of the fields of view of photoelectric element 4 (pixel 504) in quadrant I, photoelectric element 3 (pixel 503) in quadrant II, photoelectric element 1 (pixel 501) in quadrant III, and photoelectric element 2 (pixel 502) in quadrant IV. Sub-field of view 313 has substantially the same area as sensor active area 310. Sub-field of view 313 moves to the position shown in FIG. Figure 3B The lower left side of the sensor active area 310 is shown, and above the sensor active area 310. Figure 3B And refer to Figure 2A Similarly, sub-field of view 314 is a combination of the fields of view of photoelectric element 3 (pixel 503) in quadrant I, photoelectric element 4 (pixel 504) in quadrant II, photoelectric element 2 (pixel 502) in quadrant III, and photoelectric element 1 (pixel 501) in quadrant IV. Sub-field of view 314 has substantially the same area as sensor active area 310. Sub-field of view 312 is moved to Figure 3B The sensor active area 310 is shown at the lower right side and above the sensor active area 310. The entire field of view 330 of the optical imaging device disclosed in the present invention is the result of combining the sub-fields of view 311, 312, 313 and 314.

[0101] exist Figure 4A And refer to Figure 3B , an electronic device having an optical imaging device 100 (for example: shown in Figure 1The organic light emitting diode display system 1000 can access different fingerprint images. Specifically, the electronic device processes the pixels for the sub-view 311 to generate a fingerprint image 401, processes the pixels for the sub-view 312 to generate a fingerprint image 402, processes the pixels for the sub-view 313 to generate a fingerprint image 403, and processes the pixels for the sub-view 314 to generate a fingerprint image 404. The electronic device can further find common features from the fingerprint images 401, 402, 403 and 404 and merge them to form a fingerprint image such as Figure 4B A complete fingerprint image 400 is shown. In some embodiments, the electronic device uses fingerprint images 401, 402, 403 and 404 individually. In some embodiments, the electronic device uses the complete fingerprint image 400.

[0102] Figure 5A A top view is shown schematically showing an optical imaging device 500 according to some other embodiments disclosed in the present invention. Figure 5A As shown, the optical imaging device 500 includes a plurality of detection units 50 arranged in an array. Figure 5A In FIG. 5 , detection units 50 are representatively shown near and around the center C of the above-mentioned array. Figure 5B Display along Figure 5A A cross-sectional view of the optical imaging device 500 taken along line BB. Figure 5C Display along Figure 5A A cross-sectional view of the optical imaging device 500 taken along line CC.

[0103] Shown in Figures 5A to 5C The optical imaging device 500 is shown in Figures 2A to 2C The difference between the optical imaging device 100 and the optical imaging device 500 lies in the structure of the microlens and the structure of replacing the opaque layer 30 of the optical imaging device 100 between the opaque layer 20 and the opaque layer 40 with the structure of the opaque layer 95 above the opaque layer 75. In this embodiment, the combination of materials and processes of the opaque layer 20 and the opaque layer 75, including the process of forming the relevant openings, is similar to the combination of materials and processes of the opaque layer 20 and the opaque layer 40 of the optical imaging device 100. For some elements or features of the optical imaging device 500, which are similar to the elements or features of the optical imaging device 100 shown in Figures 2A to 2C and are not substantially affected by the aforementioned differences from the optical imaging device 100, their detailed description will be omitted below.

[0104] Please refer to Figure 5A , 5B5C, in some embodiments, the optical imaging device 500 includes a plurality of detection units 50, and the plurality of detection units 50 include a substrate 10 and an opaque layer stack on the substrate 10. The opaque layer stack includes an opaque layer 20 and an opaque layer 75, the opaque layer 20 is on the substrate 10, and the opaque layer 75 is on the opaque layer 20. The substrate 10 and the opaque layer 20 of the optical imaging device 500 and the characteristic components formed on the substrate 10 and the opaque layer 20 are similar to the substrate 10 and the opaque layer 20 and the characteristic components formed on the substrate 10 and the opaque layer 20 of the optical imaging device 100. The detection unit 50 also includes four openings 22 in the transparent layer 20 and an opening 76 in the opaque layer 75, which are configured to form a first optical channel 61 connecting the common opening 76 to the photoelectric element 1, a second optical channel 62 connecting the common opening 76 to the photoelectric element 2, a third optical channel 63 connecting the common opening 76 to the photoelectric element 3, and a fourth optical channel 64 connecting the common opening 76 to the photoelectric element 4.

[0105] like Figure 5A , 5B As shown in FIG. 5C , in some embodiments, at least one of the detection units 50 includes a plurality of pixels 501, 502, 503, and 504, an opaque layer 75, and a plurality of, for example, first to fourth microlenses 95A, 95B, 95C, and 95D. The plurality of pixels 501, 502, 503, and 504 are each formed in the substrate 10. The plurality of pixels 501, 502, 503, and 504 have a plurality of, for example, first to fourth photoelectric elements 1, 2, 3, and 4, respectively. The opaque layer 75 has an opening 76 and is disposed above the plurality of photoelectric elements 1, 2, 3, and 4. In the illustrated embodiment, the opening 76 overlaps the plurality of pixels 501, 502, 503, and 504. The plurality of microlenses 95A, 95B, 95C, and 95D are disposed above the opaque layer 75. The plurality of microlenses 95A, 95B, 95C, and 95D overlap at least one of the plurality of pixels 501, 502, 503, and 504, respectively. In the illustrated embodiment, the microlens 95A overlaps the pixel 504, the microlens 95B overlaps the pixel 503, the microlens 95C overlaps the pixel 502, and the microlens 95D overlaps the pixel 501. In some embodiments, the plurality of photoelectric elements 1, 2, 3, and 4, the opening 76, and the plurality of microlenses 95A, 95B, 95C, and 95D are configured to transmit light through the opening 76 to the plurality of photoelectric elements 1, 2, 3, and 4.

[0106] like Figure 5B and 5CAs shown, in some embodiments, the opaque stack further includes an opaque layer 95 on top of the opaque layer 75, and each detection unit 50 further includes micro lenses 95A, 95B, 95C, and 95D embedded in the opaque layer 95. The micro lenses 95A, 95B, 95C, and 95D each have a substantially flat bottom surface and a curved top surface, the top surface being convex to be detected by the finger 350 (shown in FIG. Figure 1 , wherein the optical imaging device 500 replaces the optical imaging device 100) with the light 80 reflected by the ridges and valleys of the fingerprint, and the focused light is guided to the photoelectric elements 1, 2, 3 and 4 through the common opening 76 in each detection unit 50, thereby increasing the light collection efficiency of the optical imaging device 500. In such an embodiment, the first light channel 61 extends from the microlens 95A and guides the light 80 to the photoelectric element 1 through the common opening 76, the second light channel 62 extends from the microlens 95B and guides the light 80 to the photoelectric element 2 through the common opening 76, the third light channel 63 extends from the microlens 95C and guides the light 80 to the photoelectric element 3 through the common opening 76, and the fourth light channel 64 extends from the microlens 95D and guides the light 80 to the photoelectric element 4 through the common opening 76.

[0107] In some embodiments, the opaque layer 95 is a single layer or multi-layer structure formed of one or more polymer opaque materials, which are patterned to form openings therein and the microlenses are embedded in the opaque layer 95. In one embodiment, the one or more polymer opaque materials of the opaque layer 95 are substantially the same as the one or more polymer opaque materials of the opaque layer 75. In other embodiments, the one or more polymer opaque materials of the opaque layer 95 are different from the one or more polymer opaque materials of the opaque layer 75. In some embodiments, after the opaque layer 75 is formed and patterned to form the common openings 76 therein, a photosensitive layer such as a photoresist is formed on the patterned opaque layer 75, and then exposed to a light source to form the opaque layer 95 having openings for embedding the microlenses. As shown in the above description, Figure 2B and 2C The photoresist layer used to form the opaque layer 40 and the photoresist layer used to form the opaque layer 95 are also negative photoresists or positive photoresists.

[0108] Depending on the needs, Figure 5B and 5C In the embodiment of at least one of the transparent layer 71 and the transparent layer 72 shown, it is similar to that shown in Figure 5B and 5BAt least one of the transparent layer 71 and the transparent layer 72 formed as needed may be formed between the opaque layer 20 and the opaque layer 75 and / or between the opaque layer 95 and the opaque layer 75 as needed.

[0109] In some embodiments, in each detection unit 50, a lens material transparent to visible light may be deposited in the opening in the opaque layer 95 (for example, by a spin coating method or a deposition process) to form microlenses 95A, 95B, 95C, and 95D in the opaque layer 95. A microlens template having a curved upper surface is patterned above the lens material. In some embodiments, the microlens template may include a photoresist material, which is exposed to a specific distribution of exposure doses (for example, for a negative photoresist, the bottom of the curved surface is exposed with a larger amount of light, and the top of the curved surface is exposed with a smaller amount of light), and is developed and baked to form a rounded shape. Then, the microlens material is selectively etched according to the microlens template to form microlenses 95A, 95B, 95C, and 95D.

[0110] The optical imaging device 500 can be front-illuminated or back-illuminated. Figure 5B and 5C In the embodiment of the present invention, the optical imaging device 500 is back-illuminated and has the same Figure 2B and 2C The interconnect structure 12 is similarly disposed under the substrate 10 of the optical imaging device 100, and the optical imaging device 500 shown is preferably back-illuminated to reduce destructive interference and provide better quantum efficiency. In addition, as described above, the photoelectric elements 1, 2, 3 and 4 in each detection unit 50 of the optical imaging device 500 receive obliquely incident light. When the optical imaging device 500 is back-illuminated, the optical imaging device 500 can have better sensitivity to obliquely incident light 80 compared to a front-illuminated device.

[0111] In some embodiments, the optical imaging device 500 further includes a multi-layer filter 11 disposed between the opaque layer 20 and the opaque layer 75, as described above with respect to the optical imaging device 100 shown in FIGS. 2B and 2C.

[0112] Figure 5A A top view is shown schematically showing an embodiment of the optical imaging device 500 disclosed according to the present invention, in which the figure is similar to Figure 2A Introduce the rectangular coordinate system. Similar to the previous Figure 2A The description is shown in Figure 5AThe embodiment illustrated in the example has four photoelectric elements and the same or corresponding number of other elements in each detection unit 50, which is only for the purpose of explanation and is not intended to be limiting. Any appropriate number of photoelectric elements can be set in each detection unit 50 according to requirements. In some embodiments, each detection unit 50 is divided into a plurality of pixels, and the number of pixels in each detection unit 50 is greater than or equal to the number of photoelectric elements, and the above-mentioned photoelectric elements are respectively placed in different pixels.

[0113] In the Figure 5A In the embodiment of Figure 2A The same way as described above is used to define the four photoelectric elements in each detection unit 50, and each detection unit 50 is divided into four pixels arranged in a 2×2 array. In each detection unit 50, the pixel where the photoelectric element 1 is located is pixel 501, the pixel where the photoelectric element 2 is located is pixel 502, the pixel where the photoelectric element 3 is located is pixel 503, and the pixel where the photoelectric element 4 is located is pixel 504.

[0114] exist Figure 5A In two adjacent representative detection units 50, the extending directions of the first light channel 61, the second light channel 62, the third light channel 63 and the fourth light channel 64 in the top view of the stack of the substrate 10 and the above-mentioned opaque layer stack are represented by arrows. Figure 5A , the first light channel 61 and the fourth light channel 64 extend in substantially opposite directions, while the second light channel 62 and the third light channel 63 extend in substantially opposite directions. It should be noted that the arrows are only used to show the extension direction, rather than to represent the actual outline of the light channel. In other embodiments, the respective extension directions 61A, 62A, 63A and 64A of the first light channel 61, the second light channel 62, the third light channel 63 and the fourth light channel 64 can be appropriately distributed according to needs. In some embodiments, the angle between the extension direction 61A of the first light channel 61 and the parallel direction of the X-axis can be in the range between 0 degrees and less than 80 degrees, as shown in FIG. Figure 5A In some embodiments, the angle between the extension direction 62A of the second optical channel 62 and the direction parallel to the X-axis can be in the range of 0 degrees to less than 80 degrees, as shown in FIG. Figure 5A In some embodiments, the angle between the extension direction 63A of the third optical channel 63 and the direction parallel to the X-axis can be in the range of 0 degrees to less than 80 degrees, as shown in FIG. Figure 5A In some embodiments, the angle between the extension direction 64A of the fourth optical channel 64 and the direction parallel to the X-axis can be in the range of 0 degrees to less than 80 degrees, as shown in FIG. Figure 5A An embodiment is about 45 degrees.

[0115] exist Figure 2A In some embodiments of the optical imaging device 100, a lens is provided in each detection unit 50 as required, and the lens is shared when guiding light to four photoelectric elements. Figure 5A In some embodiments of the optical imaging device 500, four lenses are provided in each detection unit 50 as required, and the four lenses are used respectively when guiding light to four photoelectric elements. Figure 2A In the case shown, since only one microlens 40A is provided in each detection unit 50, the diameter of the microlens 40A can be increased as much as possible, provided that it does not exceed the detection unit 50 in which it is located. Figure 2A and 5A If the detection unit 50 in the embodiment has the same size, the diameter of the microlens 40A may be larger than the diameter of any one of the microlenses 95A, 95B, 95C and 95D. Figure 2A The optical imaging device 100 has a microlens 40A with a larger diameter than that shown in Figure 5A The optical imaging device 500 has greater optical sensitivity.

[0116] Fig. 6A A top view is shown schematically showing an optical imaging device 600 according to some other embodiments disclosed in the present invention. Fig. 6A As shown, the optical imaging device 600 includes a plurality of inner detection units 51 and a plurality of peripheral detection units 55. The inner detection units 51 are arranged in an array, and the peripheral detection units 55 surround the array of the inner detection units 51. In some embodiments, the plurality of peripheral detection units 55 are disposed at the edge of the optical imaging device 600. Fig. 6A In FIG. 5 , the inner detection unit 51 and the peripheral detection unit 55 near the corners of the above array are representatively shown. Figure 6B Display along Fig. 6A A cross-sectional view of the optical imaging device 600 taken along line B2-B2 and line B3-B3. Figure 6C Display along Fig. 6A Similarly, the rectangular coordinate system provides an X-axis and a Y-axis, which intersect at the center C of the array of the inner detection unit 51, and Fig. 6A As shown in FIG. 1 , the arrangement of the inner detection unit 51 and the peripheral detection unit 55 can be divided into quadrants I, II, III, and IV. In some embodiments, the center C is the geometric center or the substantial geometric center of the array of the inner detection unit 51. In other embodiments, the center C is a predetermined reference point for the array of the inner detection unit 51, but it is still referred to as the “center” in this specification.

[0117] Will be shown in Fig. 6AThe optical imaging device 600 is shown in Figure 2A Compared with the optical imaging device 100 of FIG. 1 , the elements or features of each inner detection unit 51 of the optical imaging device 600 and the array of the inner detection units 51 are similar or identical to those of FIG. Figures 2A to 2C The elements or features of each detection unit 50 of the optical imaging device 100 and the array of detection units 50 are shown in FIG. Fig. 6A The optical imaging device 600 further includes a plurality of peripheral detection units 55 which surround the array of inner detection units 51 . Figure 6B and 6C The cross-sectional structure of the periphery detection unit 55 is shown.

[0118] exist Fig. 6A , 6B Reference to 6C Figure 2B and 2C The optical imaging device 600 includes a plurality of inner detection units 51 and a plurality of peripheral detection units 55, and the plurality of inner detection units 51 and the plurality of peripheral detection units 55 include a substrate 10 and an opaque layer stack on the substrate 10. The opaque layer stack includes an opaque layer 20 and an opaque layer 40, the opaque layer 20 is on the substrate 10, and the opaque layer 40 is on the opaque layer 20. The opaque layer stack also includes an opaque layer 30 between the opaque layer 20 and the opaque layer 40. In each inner detection unit 51, the details of the photoelectric elements 1, 2, 3 and 4, the four openings 22, the one opening 41, the microlens 40A, the four openings 31, 32, 33, 34, the first light channel 61, the second light channel 62, the third light channel 63, the fourth light channel 64, the transparent layer 71 and the transparent layer 72 are substantially the same or similar. Figure 2B and 2C The photoelectric elements 1, 2, 3 and 4, four openings 22, one opening 41, the microlens 40A, the four openings 31, 32, 33, 34, the first optical channel 61, the second optical channel 62, the third optical channel 63, the fourth optical channel 64, the transparent layer 71 and the transparent layer 72 of the detection unit 50 shown in the figure can be referred to the previous description of the detection unit 50 of the optical imaging device 100, so they are omitted in the following text.

[0119] The optical imaging device 600 can be front-illuminated or back-illuminated. Figure 6B and 6C In the embodiment of the present invention, the optical imaging device 600 is back-illuminated and has the same Figure 2B and 2CThe interconnect structure 12 is similarly disposed under the substrate 10 of the optical imaging device 100, and the optical imaging device 600 shown is preferably back-illuminated to reduce destructive interference and provide better quantum efficiency. In addition, as described above, the photoelectric elements 1, 2, 3 and 4 in each inner detection unit 51 of the optical imaging device 600 receive obliquely incident light. When the optical imaging device 600 is back-illuminated, the optical imaging device 600 can have better sensitivity to obliquely incident light 80 compared to a front-illuminated device.

[0120] In some embodiments, the optical imaging device 600 further includes a multi-layer filter 11, which is disposed between the opaque layer 20 and the opaque layer 40, as described above. Figure 2B and 2C An optical imaging device 100.

[0121] The difference between each peripheral detection unit 55 and each inner detection unit 51 is that the opaque layer 20 and the opaque layer 30 in each peripheral detection unit 55 are not patterned or perforated like the opaque layer 20 and the opaque layer 30 in each inner detection unit 51. The peripheral detection unit 55 is provided to mainly receive light propagating inward relative to the range of the combination of the peripheral detection unit 55 and the inner detection unit 51, so as to further expand the field of view of the optical imaging device 600.

[0122] In some embodiments, Figure 6B As shown, similar to each inner detection unit 51, each peripheral detection unit 55 includes photoelectric elements 1, 2, 3 and 4, each disposed on the substrate 10 and spaced apart from each other. In the embodiment shown, the photoelectric elements 1, 2, 3 and 4 in each peripheral detection unit 55 are defined in the same manner as the photoelectric elements 1, 2, 3 and 4 in each inner detection unit 51. In some embodiments, as Figure 6B As shown, the opaque layer 20 includes an opening 22 to cover the photoelectric element 1, but the opaque layer 20 covers the photoelectric element 4. As a result, the photoelectric element 4 covered by the opaque layer 20 is identified as a dummy photoelectric element, and the pixel 504 having the covered photoelectric element 4 is identified as a dummy pixel. In such an embodiment, an opening 31 is formed in the opaque layer 30, and a microlens 40A is formed and embedded in an opening 41 of the opaque layer 40. Therefore, each peripheral detection unit 55 is configured to form a first optical channel 61 that connects the microlens 40A to the photoelectric element 1 via the opening 31, but no optical channel is formed between the microlens 40A and the photoelectric element 4. Fig. 6AIn the figure, among the four photoelectric elements of each inner detection unit 51 and each peripheral detection unit 55, the ones closest to and farthest from the center C of the array of the inner detection unit 51 are defined as photoelectric elements 1 and 4, respectively. As a result, the peripheral detection unit 55 mainly receives the light 80 that propagates inward relative to the range where the peripheral detection unit 55 and the inner detection unit 51 are combined, thereby helping to further expand the field of view of the optical imaging device 600.

[0123] like Fig. 6A As shown, the array of inner detection cells 51 and each inner detection cell 51 can be rectangular, or polygonal as described above for the detection cell 50. In some embodiments, each peripheral detection cell 55 is also rectangular. In some embodiments, each peripheral detection cell 55 has substantially the same size as each inner detection cell 51. In some other embodiments, at least some of the peripheral detection cells 55 have different sizes from each inner detection cell 51. In the embodiment where the inner detection cells 51 and the peripheral detection cells 55 are rectangular and have substantially the same size, the peripheral detection cells 55 have four rows of edge detection cells 52, which respectively contact the four sides of the array of inner detection cells 51. In the embodiment where the peripheral detection cells 55 have four rows of edge detection cells 52, the peripheral detection cells 55 may also include four corner detection cells 53, which respectively contact the four corners of the array of inner detection cells 51 and are respectively between two edge detection cells 52.

[0124] In the embodiment where the peripheral detection unit 55 has four rows of edge detection units 52, the edge detection unit 52 may include more than one optical channel to introduce the light 80 that propagates inward relative to the range where the peripheral detection unit 55 and the inner detection unit 51 are combined. Fig. 6A The edge detection unit 52 includes two rows of edge detection units 52X and the remaining two rows of edge detection units 52Y. The edge detection units 52X are arranged in a direction substantially parallel to the X axis, and the edge detection units 52Y are arranged in a direction substantially parallel to the Y axis. The two rows of edge detection units 52X are respectively in contact with two sides of the array of the inner detection units 51 that are substantially parallel to the X axis, and the two rows of edge detection units 52Y are respectively in contact with the remaining two sides of the array of the inner detection units 51 that are substantially parallel to the Y axis.

[0125] exist Figure 6C , showing one of the edge detection units 52X and one of the edge detection units 52Y. Please refer to Fig. 6A and 6C , as mentioned above Figure 2AAs described for the detection unit 50, the photoelectric element 2 is closer to the X-axis. For the edge detection unit 52X, the light 80 from the microlens 40A to the photoelectric element 2 can be identified as a propagation direction that is relatively inward relative to the range of the combination of the peripheral detection unit 55 and the inner detection unit 51. Therefore, it is preferred that each edge detection unit 52X includes one more opening 22 for exposing the photoelectric element 2 in the opaque layer 20 and one more opening 32 in the opaque layer 30, and each edge detection unit 52X is configured to form a second light channel 62, which extends from the microlens 40A to the photoelectric element 2 through the multiple openings 32 formed. Therefore, the edge detection unit 52X can help to further expand the field of view of the optical imaging device 600.

[0126] Please refer to Fig. 6A and 6C , as mentioned above Figure 2A As described for the detection unit 50, the photoelectric element 3 is closer to the Y axis. For the edge detection unit 52Y, the light 80 from the microlens 40A to the photoelectric element 3 can be identified as a propagation direction that is relatively inward relative to the range of the combination of the peripheral detection unit 55 and the inner detection unit 51. Therefore, it is preferred that each edge detection unit 52Y includes one more opening 22 for exposing the photoelectric element 3 in the opaque layer 20 and one more opening 33 in the opaque layer 30, and each edge detection unit 52Y is configured to form a third light channel 63, which extends from the microlens 40A to the photoelectric element 3 through the multiple openings 33 formed. Therefore, the edge detection unit 52Y can help to further expand the field of view of the optical imaging device 600.

[0127] exist Fig. 6A And refer to Figure 6B , each corner detection unit 53 includes only one optical channel (first optical channel 61). In other embodiments, at least one corner detection unit 53 may include more optical channels and the microlens 40A may be connected to any one of the photoelectric elements 2, 3 and 4 as required.

[0128] Figure 7 A top view is shown schematically showing an optical imaging device 700 according to some other embodiments disclosed in the present invention. Figure 7 As shown, the optical imaging device 700 includes a plurality of inner detection units 51 and a plurality of peripheral detection units 55. The inner detection units 51 are arranged in an array, and the peripheral detection units 55 surround the array of the inner detection units 51. Figure 7 In FIG. 5 , the inner detection unit 51 and the peripheral detection unit 55 near the corners of the array are representatively shown. Figure 7 The optical imaging device 700 is shown in Figures 6A to 6CThe optical imaging device 600 is similar to FIG. 1 , but differs in the distribution of pixels in each inner detection unit 51 and each peripheral detection unit 55 . Figure 7 The top view of the optical imaging device 700 is shown in Figure 6B , 6C , 2B and 2C are similar in top view, but differ in that the microlens 40A of the optical imaging devices 100 and 600 is replaced by a microlens 42A embedded in the opening 41 of each inner detection unit 51 and each peripheral detection unit 55. The microlens 42A is similar to the microlens 40A of the optical imaging device 600, except that the microlens 42A has a diameter larger than the diameter of the microlens 40A in some embodiments as described below. The following description of the cross-sectional structure of the optical imaging device 700 can be referred to Figure 6B , 6C , 2B and 2C.

[0129] exist Figure 7 And refer to Figure 6B and 6C Further reference Figure 2B and 2C The optical imaging device 700 includes a plurality of inner detection units 51 and a plurality of peripheral detection units 55, and the plurality of inner detection units 51 and the plurality of peripheral detection units 55 include a substrate 10 and an opaque layer stack on the substrate 10. The opaque layer stack includes an opaque layer 20 and an opaque layer 40, the opaque layer 20 is on the substrate 10, and the opaque layer 40 is on the opaque layer 20. The opaque layer stack also includes an opaque layer 30 between the opaque layer 20 and the opaque layer 40. In each inner detection unit 51 and each peripheral detection unit 55, except for the aforementioned differences, the details of the photoelectric elements 1, 2, 3 and 4, the four openings 22, the one opening 41, the four openings 31, 32, 33, 34, the first optical channel 61, the second optical channel 62, the third optical channel 63, the fourth optical channel 64, the transparent layer 71, the transparent layer 72, the multilayer filter 11 and the interconnection structure 12 are substantially the same or similar. Figures 6A to 6C The optical imaging device 600 shown has photoelectric elements 1, 2, 3 and 4, four openings 22, one opening 41, four openings 31, 32, 33, 34, a first optical channel 61, a second optical channel 62, a third optical channel 63, a fourth optical channel 64, a transparent layer 71, a transparent layer 72, a multilayer filter 11 and an interconnection structure 12. For detailed descriptions, please refer to the previous descriptions of the optical imaging devices 600 and 100, so they are omitted in the following text.

[0130] like Fig. 6AEach inner detection unit 51 and each peripheral detection unit 55 are divided into four pixels arranged in a 2×2 array, and the photoelectric elements 1, 2, 3 and 4 are respectively placed in the four pixels 501, 502, 503 and 504; Figure 7 Each inner detection unit 51 and each peripheral detection unit 55 shown is divided into nine pixels arranged in a 3×3 array, and the photoelectric elements 1, 2, 3 and 4 are respectively placed in the four pixels 571, 572, 573 and 574 at the corners of the 3×3 array. The remaining five pixels 575 in each inner detection unit 51 and each peripheral detection unit 55 can be provided with photoelectric elements like the four pixels 571, 572, 573 and 574. In some embodiments, the photoelectric elements in the remaining five pixels 575 in each inner detection unit 51 and each peripheral detection unit 55 are covered by an opaque layer 20 (please refer to Fig. 6A and 6B ). As a result, the photoelectric element covered by the opaque layer 20 is identified as a dummy photoelectric element, and the pixel 575 having the covered photoelectric element is identified as a dummy pixel. In at least one of such embodiments, at least one of the dummy pixels 575 is between at least two of the pixels 571, 572, 573 and 574. In some other embodiments, each internal detection unit 51 may also include one or more optical channels to connect the microlens 42A to a designated photoelectric element or a photoelectric element in the remaining five pixels, such as the aforementioned first optical channel 61, the second optical channel 62, the third optical channel 63 and the fourth optical channel 64. In some other embodiments, each peripheral detection unit 55 may also include one or more optical channels other than the aforementioned first optical channel 61, the second optical channel 62 and the third optical channel 63 to connect the microlens 42A to a designated photoelectric element or a photoelectric element other than the photoelectric elements 1, 2, and 3, such as the aforementioned first optical channel 61, the second optical channel 62 and the third optical channel 63.

[0131] Shown in Figure 7 The optical imaging device 700 includes an inner detection unit 51 and a peripheral detection unit 55, each of which is divided into nine pixels arranged in a 3×3 array. In some embodiments, the nine pixels in the 3×3 array are as follows: Figure 2A and 6A The four pixels in the 2×2 array shown provide a large margin for adjusting the diameter of microlens 42A. Figure 7 The diameter of the microlens 42A provided in the optical imaging device 700 may be larger than that shown in Figure 2A The optical imaging device 100 is shown in Fig. 6A The diameter of the microlens 40A of the optical imaging device 600 is thus Figure 2A The optical imaging device 100 is shown in Fig. 6A The optical imaging device 600 is shown in Figure 7 The optical imaging device 700 can provide greater optical sensitivity.

[0132] Figure 8 A top view is shown schematically showing an optical imaging device 800 according to some other embodiments disclosed in the present invention. Figure 8 As shown, the optical imaging device 800 includes a plurality of inner detection units 51 and a plurality of peripheral detection units 55. The inner detection units 51 are arranged in an array, and the peripheral detection units 55 surround the array of the inner detection units 51. Figure 8 In FIG. 5 , the inner detection unit 51 and the peripheral detection unit 55 near the corners of the array are representatively shown. Figure 8 The optical imaging device 800 is shown in Figure 7 The optical imaging device 700 is similar to the optical imaging device 700, but the difference lies in the distribution of pixels in each inner detection unit 51 and each peripheral detection unit 55 and the distribution of light channels in the peripheral detection unit 55. Therefore, as shown in Figure 7 The following description of the cross-sectional structure of the optical imaging device 800 can be referred to in Figure 6B , 6C , 2B and 2C.

[0133] exist Figure 8 And refer to Figure 7 , 6A , 6B and 6C for further reference Figure 2B and 2C The optical imaging device 800 includes a plurality of inner detection units 51 and a plurality of peripheral detection units 55, wherein the plurality of inner detection units 51 and the plurality of peripheral detection units 55 include a substrate 10 and an opaque layer stack on the substrate 10. The opaque layer stack includes an opaque layer 20 and an opaque layer 40, wherein the opaque layer 20 is on the substrate 10 and the opaque layer 40 is on the opaque layer 20. The opaque layer stack also includes an opaque layer 30 between the opaque layer 20 and the opaque layer 40. In each inner detection unit 51 and each peripheral detection unit 55, except for the aforementioned differences, details of the photoelectric elements 1, 2, 3 and 4, the four openings 22, the one opening 41, the microlens 42A, the four openings 31, 32, 33, 34, the first light channel 61, the second light channel 62, the third light channel 63, the fourth light channel 64, the transparent layer 71, the transparent layer 72, the multilayer filter 11 and the interconnection structure 12 are substantially the same or similar. Figure 7 Shown and referenced Figure 6B and 6C Further reference Figure 2B and 2CThe photoelectric elements 1, 2, 3 and 4 of the inner detection unit 51 and the peripheral detection unit 55 of the optical imaging device 700, four openings 22, one opening 41, microlens 42A, four openings 31, 32, 33, 34, first optical channel 61, second optical channel 62, third optical channel 63, fourth optical channel 64, transparent layer 71, transparent layer 72, multilayer filter 11 and interconnection structure 12, for detailed description, please refer to the description of the optical imaging devices 700, 600 and 100 above, so they are omitted below. In addition, some of the photoelectric elements 1, 2, 3 and 4 are covered by the opaque layer 20 and are therefore not shown. Figure 8 In the peripheral detection unit 55.

[0134] like Figure 8 As shown, among the four photoelectric elements of each inner detection unit 51 and each peripheral detection unit 55, the distance between the photoelectric element 4 and the center C of the array of the inner detection unit 51 is farther than the distance between the photoelectric element 1 and the center C of the array of the inner detection unit 51, and the distance between the photoelectric element 3 and the center C of the array of the inner detection unit 51 is farther than the distance between the photoelectric element 2 and the center C of the array of the inner detection unit 51. Regarding the optical imaging device 800, the difference between the arrangement of the photoelectric elements 1, 2, 3 and 4 and the optical imaging devices 700, 600 and 100 does not substantially affect the cross-sectional features and structures. In some embodiments, the distribution of the photoelectric elements 1, 2, 3 and 4 in the regions of quadrants I, II, III and IV is symmetrical with respect to the X-axis, Y-axis or the center C.

[0135] like Figure 8 As shown, the array of inner detection units 51 and each inner detection unit 51 can be rectangular, or polygonal as described above for the detection unit 50. In some embodiments, each peripheral detection unit 55 is also rectangular. In some embodiments, each peripheral detection unit 55 has substantially the same size as each inner detection unit 51. In some other embodiments, at least some of the peripheral detection units 55 have different sizes from each inner detection unit 51. In an embodiment in which the inner detection unit 51 and the peripheral detection unit 55 are rectangular and have substantially the same size, the peripheral detection unit 55 has four rows of edge detection units 52, which respectively contact the four sides of the array of inner detection units 51. In an embodiment in which the peripheral detection unit 55 has four rows of edge detection units 52, the peripheral detection unit 55 may also include four corner detection units 53, which respectively contact the four corners of the array of inner detection units 51 and are respectively between two edge detection units 52. Figure 8The edge detection unit 52 includes two rows of edge detection units 52X and the remaining two rows of edge detection units 52Y. The edge detection units 52X are arranged in a direction substantially parallel to the X axis, and the edge detection units 52Y are arranged in a direction substantially parallel to the Y axis. The two rows of edge detection units 52X are respectively in contact with the two sides of the array of the inner detection units 51 that are substantially parallel to the X axis, and the two rows of edge detection units 52Y are respectively in contact with the remaining two sides of the array of the inner detection units 51 that are substantially parallel to the Y axis. The edge detection units 52Y are arranged along Figure 8 The cross-sectional view of line BB in FIG. Figure 6B The cross-sectional diagram is equal; and the edge detection unit 52X is along Figure 8 The cross-sectional view of the CC line in is the same as that shown in Figure 6C The cross-sectional views of the edge detection unit 52X are equal.

[0136] In some embodiments, Figure 8 As shown, each inner detection unit 51 and each peripheral detection unit 55 are divided into nine pixels arranged in a 3×3 array, and the photoelectric elements 1, 2, 3 and 4 are respectively placed in the four pixels 581, 582, 583 and 584 in the middle of each of the four sides of the above 3×3 array. The remaining five pixels 585 in each inner detection unit 51 and each peripheral detection unit 55 can be provided with photoelectric elements like the four pixels 581, 582, 583 and 584. In some embodiments, the photoelectric elements in the remaining five pixels 585 in each inner detection unit 51 and each peripheral detection unit 55 are covered by the opaque layer 20 (please refer to Fig. 6A and 6B ). As a result, the photoelectric element covered by the opaque layer 20 is identified as a dummy photoelectric element, and the pixel 585 having the covered photoelectric element is identified as a dummy pixel. In at least one of such embodiments, at least one of the dummy pixels 585 is between at least two of the pixels 581, 582, 583, and 584.

[0137] The difference between each peripheral detection unit 55 and each inner detection unit 51 is that the opaque layer 20 and the opaque layer 30 in each peripheral detection unit 55 are not patterned or perforated like the opaque layer 20 and the opaque layer 30 in each inner detection unit 51. The peripheral detection unit 55 is provided to mainly receive light propagating inward relative to the range of the combination of the peripheral detection unit 55 and the inner detection unit 51, so as to further expand the field of view of the optical imaging device 800.

[0138] exist Figure 8 And refer to Figure 6C, the photoelectric element 2 is closer to the center C. For the edge detection unit 52X, the light 80 from the microlens 42A to the photoelectric element 2 can be determined to be propagating in a direction relatively inward relative to the range where the peripheral detection unit 55 and the inner detection unit 51 are combined. Figure 8 In the embodiment, each edge detection unit 52X includes an opening 22 in the opaque layer 20 to expose the photoelectric element 2 and an opening 32 in the opaque layer 30, and each edge detection unit 52X is configured to form a second light channel 62 extending from the microlens 42A through the opening 32 to the photoelectric element 2. Therefore, the edge detection unit 52X can help further expand the field of view of the optical imaging device 800.

[0139] exist Figure 8 And refer to Figure 6B , the photoelectric element 1 is closer to the center C. For the edge detection unit 52Y, the light 80 from the microlens 42A to the photoelectric element 1 can be determined to be propagating in a direction relatively inward relative to the range where the peripheral detection unit 55 and the inner detection unit 51 are combined. Figure 8 In the embodiment, each edge detection unit 52Y includes an opening 22 in the opaque layer 20 to expose the photoelectric element 1 and an opening 31 in the opaque layer 30, and each edge detection unit 52Y is configured to form a first light channel 61 extending from the microlens 42A through the opening 31 to the photoelectric element 1. Therefore, the edge detection unit 52Y can help to further expand the field of view of the optical imaging device 800.

[0140] exist Figure 8 , no optical channel is formed in each corner detection unit 53. In other embodiments, at least one of the corner detection units 53 may further include at least one optical channel to connect the microlens 42A to any one of the designated photoelectric elements 1, 2, 3, and 4.

[0141] exist Figure 8 , only one optical channel is formed in each edge detection unit 52. In other embodiments, at least one of the edge detection units 52 may include more optical channels as required. One of such other embodiments is shown in Fig. 9A and 9B .

[0142] Fig. 9A A top view is shown schematically showing an optical imaging device 900 according to some other embodiments disclosed in the present invention. Fig. 9A As shown, the optical imaging device 900 includes a plurality of inner detection units 51 and a plurality of peripheral detection units 55. The inner detection units 51 are arranged in an array, and the peripheral detection units 55 surround the array of the inner detection units 51. Fig. 9AIn FIG. 5 , the inner detection unit 51 and the peripheral detection unit 55 near the corners of the array are representatively shown. Fig. 9A The optical imaging device 900 is shown in Figure 8 The optical imaging device 800 is similar, but differs in the distribution of the optical channels of the peripheral detection unit 55 . Fig. 9B Display along Fig. 9A In addition, as shown in Figure 7 and 8 The following description of the cross-sectional structure of the optical imaging device 900 can be referred to in Figure 6B , 6C , 2B and 2C.

[0143] exist Fig. 9A And refer to Figure 8 , 7 , 6A, 6B and 6C for further reference Figure 2B and 2C The optical imaging device 900 includes a plurality of inner detection units 51 and a plurality of peripheral detection units 55, wherein the plurality of inner detection units 51 and the plurality of peripheral detection units 55 include a substrate 10 and an opaque layer stack on the substrate 10. The opaque layer stack includes an opaque layer 20 and an opaque layer 40, wherein the opaque layer 20 is on the substrate 10 and the opaque layer 40 is on the opaque layer 20. The opaque layer stack also includes an opaque layer 30 between the opaque layer 20 and the opaque layer 40. In each inner detection unit 51 and each peripheral detection unit 55, except for the aforementioned differences, the details of the photoelectric elements 1, 2, 3 and 4, the four openings 22, the one opening 41, the microlens 42A, the four openings 31, 32, 33, 34, the first light channel 61, the second light channel 62, the third light channel 63, the fourth light channel 64, the transparent layer 71, the transparent layer 72, the multilayer filter 11, the interconnection structure 12, the edge detection unit 52, the edge detection unit 52X, the edge detection unit 52Y and the corner detection unit 53 are substantially the same or similar. Figure 8 Shown and referenced Figure 7 , 6A To 6C for further reference Figure 2B and 2CThe photoelectric elements 1, 2, 3 and 4 of the inner detection unit 51 and the peripheral detection unit 55 of the optical imaging device 800, four openings 22, one opening 41, a microlens 42A, four openings 31, 32, 33, 34, a first optical channel 61, a second optical channel 62, a third optical channel 63, a fourth optical channel 64, a transparent layer 71, a transparent layer 72, a multilayer filter 11, an interconnection structure 12, an edge detection unit 52, an edge detection unit 52X, an edge detection unit 52Y and a corner detection unit 53, for detailed descriptions, please refer to the descriptions of the optical imaging devices 800, 700, 600 and 100 above, so they are omitted below. In addition, some of the photoelectric elements 3 and 4 are covered by the opaque layer 20 and are therefore not shown. Fig. 9A In the peripheral detection unit 55.

[0144] like Fig. 9A As shown, the definition of the four photoelectric elements in each inner detection unit 51 and each peripheral detection unit 55 is the same as the above description of the optical imaging device 800. In some embodiments, the distribution of the photoelectric elements 1, 2, 3 and 4 in the regions of quadrants I, II, III and IV is symmetrical with respect to the X-axis, Y-axis or center C.

[0145] In some embodiments, Fig. 9A As shown, each inner detection unit 51 and each peripheral detection unit 55 are divided into nine pixels arranged in a 3×3 array, and the photoelectric elements 1, 2, 3 and 4 are respectively placed in the four pixels 591, 592, 593 and 594 in the middle of each of the four sides of the above 3×3 array. The remaining five pixels 595 in each inner detection unit 51 and each peripheral detection unit 55 can be provided with photoelectric elements like the four pixels 591, 592, 593 and 594. In some embodiments, the photoelectric elements in the remaining five pixels 585 in each inner detection unit 51 and each peripheral detection unit 55 are covered by the opaque layer 20 (please refer to Fig. 6A and 6B ). As a result, the photoelectric element covered by the opaque layer 20 is identified as a dummy photoelectric element, and the pixel 595 having the covered photoelectric element is identified as a dummy pixel. In at least one of such embodiments, at least one of the dummy pixels 595 is between at least two of the pixels 591, 592, 593, and 594.

[0146] Shown in Fig. 9A and 9B Each peripheral detection unit 55 of the optical imaging device 900 is shown in Figure 8 And refer to Figure 6B and 6CThe difference between each peripheral detection unit 55 of the optical imaging device 800 is that each peripheral detection unit 55 of the optical imaging device 900 includes two openings 22 in the opaque layer 20 to expose the photoelectric elements 1 and 2 and two openings 31 and 32 in the opaque layer 30, and each peripheral detection unit 55 is configured to form a first light channel 61 and a second light channel 62, the first light channel 61 extends from the microlens 42A to the photoelectric element 1 through the opening 31, and the second light channel 62 extends from the microlens 42A to the photoelectric element 2 through the opening 32. Because the photoelectric elements 1 and 2 are closer to the center C, the light 80 from the microlens 42A to the photoelectric element 1 and from the microlens 42A to the photoelectric element 2 can be determined as propagating in a direction relatively inward relative to the range of the combination of the peripheral detection unit 55 and the inner detection unit 51. Therefore, the peripheral detection unit 55 can help to further expand the field of view of the optical imaging device 900.

[0147] In some embodiments, Fig. 9A and 9B As shown, each edge detection unit 52X further includes an opening 22 in the opaque layer 20 to expose the photoelectric element 4 and an opening 34 in the opaque layer 30, and each edge detection unit 52X is configured to further form a fourth light channel 64, which extends from the microlens 42A to the photoelectric element 4 through the opening 34. In some embodiments, as shown in Figures 9A and 9B, each edge detection unit 52Y further includes an opening 22 in the opaque layer 20 to expose the photoelectric element 3 and an opening 33 in the opaque layer 30, and each edge detection unit 52Y is configured to further form a third light channel 63, which extends from the microlens 42A to the photoelectric element 3 through the opening 33.

[0148] Fig. 10A A top view is shown schematically illustrating an optical imaging device 1200 according to some other embodiments disclosed in the present invention. Figures 10B to 10E The display section is shown in Fig. 10A The optical imaging device 1200. Fig. 10A As shown, the optical imaging device 1200 includes a plurality of detection units 250 arranged in an array. Fig. 10A , a detection unit 250 near a corner of the array is representatively shown. In some embodiments, the detection units 250 each include photoelectric elements 201, 202, 203, and 204. In this embodiment, a plurality of openings 231 are provided, and each opening 231 is shared by four adjacent detection units 250.

[0149] In some embodiments, please refer to Fig. 10A and 10B, each detection unit 250 is divided into a plurality of pixels (not shown), the number of pixels in each detection unit 250 is greater than or equal to the number of photoelectric elements 201, 202, 203 and 204, and the photoelectric elements 201, 202, 203 and 204 are respectively included in different pixels. In some embodiments, an opening 231 overlaps a plurality of pixels belonging to different detection units 250. For example, please refer to Fig. 10B , one opening 231 overlaps four pixels, and the four pixels are respectively included in four adjacent detection units 250 .

[0150] In some embodiments, Fig. 10A As shown, the plurality of detection units 250 include a plurality of inner detection units 259 and a plurality of peripheral detection units 255, wherein the peripheral detection units 255 surround the inner detection units 259. In an embodiment where the array of the detection units 250 is rectangular and the detection units 250 have substantially the same size, the peripheral detection units 255 include four rows of edge detection units 256X, 256Y, 257X, and 257Y, which respectively contact the four sides of the array of the inner detection units 259. In an embodiment where the peripheral detection units 255 include four rows of edge detection units, the peripheral detection units 255 may further include four corner detection units 251, 252, 253, and 254, which respectively contact the four corners of the array of the inner detection units 259 and are respectively located between two adjacent edge detection units. In the illustrated embodiment, the row of edge detection units 256X is between corner detection units 251 and 252, the row of edge detection units 256Y is between corner detection units 251 and 253, the row of edge detection units 257X is between corner detection units 253 and 254, and the row of edge detection units 257Y is between corner detection units 252 and 254.

[0151] Shown in Figure 2A , 2B The optical imaging device 100 of the embodiment 2C includes a microlens 40A, which is used in each detection unit 50 to guide the light 80 to the photoelectric elements 1, 2, 3 and 4; Figure 5A , 5BThe optical imaging device 500 of the embodiment of 5C includes an opening 76 in the opaque layer 75, which is used to guide the light 80 to the photoelectric elements 1, 2, 3 and 4 in each detection unit 50. In contrast, the optical imaging device 1200 of this embodiment provides a microlens and an opening in the opaque layer, and the microlens and the opening are used to guide the light to the photoelectric element. In some embodiments, in each detection unit 250 of the optical imaging device 1200, the photoelectric elements 201, 202, 203 and 204 receive the light from the microlens 240A of the other detection units 250. As a result, the range of the incident angle of the light incident on the photoelectric elements 201, 202, 203 and 204 can be further increased.

[0152] Fig. 10B FIG. 2 is a top view showing, by way of example, details of the light paths of the photoelectric elements 201, 202, 203, and 204 reaching each detection unit 250. In some embodiments, the light path from the photoelectric element 201, 202, 203, and 204 shown in FIG. Fig. 10A The array captures a 3×3 array of detection units 250, and for clarity, only the light path reaching the detection unit 250 at the center of this 3×3 array is shown. It should be noted that the detection unit 250 of this embodiment has Fig. 10B The same or similar light paths as shown.

[0153] In the Fig. 10B In the embodiment of the present invention, with respect to the detection unit 250 at the center, light is guided from the microlens 240A of the detection unit 250 at the lower right through the opening 231 at the lower right to the photoelectric element 201, forming a first light channel 261, and the first light channel 261 extends from the microlens 240A of the detection unit 250 at the lower right through the opening 231 at the lower right to the photoelectric element 201; light is guided from the microlens 240A of the detection unit 250 at the lower left through the opening 231 at the lower left to the photoelectric element 202, forming a second light channel 262, and the second light channel 262 extends from the microlens 240A of the detection unit 250 at the lower left through the opening 231 at the lower left to the photoelectric element 202. Extends to the photoelectric element 202; guides the light from the microlens 240A of the upper right detection unit 250 through the upper right opening 231 to the photoelectric element 203, forming a third light channel 263, and the third light channel 263 extends from the microlens 240A of the upper right detection unit 250 through the upper right opening 231 to the photoelectric element 203; guides the light from the microlens 240A of the upper left detection unit 250 through the upper left opening 231 to the photoelectric element 204, forming a fourth light channel 264, and the fourth light channel 264 extends from the microlens 240A of the upper left detection unit 250 through the upper left opening 231 to the photoelectric element 204.

[0154] The detection unit 250 may include a plurality of groups, for example Figures 10C to 10F The group 250A is shown according to the aspect of sharing the opening 231 . Fig. 10C and 10D Displayed in Fig. 10A A top view of an exemplary group 250A of the optical imaging device 1200, and Fig.10E and 10F Display along Fig. 10C and 10D In the illustrated embodiment, the first light channel 261 overlaps with the fourth light channel 264, and the third light channel 263 overlaps with the second light channel 262. Therefore, for clarity, Fig. 10C The top view only shows the first light channel 261 and the third light channel 263. Fig. 10D The top view of FIG. 1 only shows the second light channel 262 and the fourth light channel 264, even though the first light channel 261, the second light channel 262, the third light channel 263 and the fourth light channel 264 are present together in the same optical imaging device 1200 (shown in FIG. 1 ). Fig. 10A ).

[0155] Please refer to Fig. 10A and 10C 10F, the optical imaging device 1200 includes a plurality of detection units 250, and the plurality of detection units 250 include a substrate 210 and an opaque layer stack on the substrate 210. A plurality of pixels included in the plurality of detection units 250 are each formed in the substrate 210. The opaque layer stack includes an opaque layer 220, an opaque layer 230, and an opaque layer 240, wherein the opaque layer 220 is on the substrate 210, the opaque layer 230 is on the opaque layer 220, and the opaque layer 240 is on the opaque layer 230. In the present embodiment, the microlens 240A of the detection unit 250 is an opening 241 embedded in the opaque layer 240, and the opening 231 of the detection unit 250 is formed in the opaque layer 230. The opaque layer 240 may also be referred to as a microlens layer. In some embodiments, each detection unit 250 further includes four openings 222 to expose the photoelectric elements 201, 202, 203, and 204, respectively. In some embodiments, the optical imaging device 1200 further includes a multilayer filter 211, which is disposed between the opaque layer 230 and the opaque layer 220. In some embodiments, one or more layers of transparent material (for example, transparent to visible light) are formed between the opaque layer 220 and the opaque layer 240, such as Fig.10E and 10FA transparent layer 271 and a transparent layer 272 are shown to adjust the incident angle of light incident on the photoelectric elements 201, 202, 203 and 204. In the embodiment where the transparent layer 271 is formed, the multilayer filter 211 is disposed between the opaque layer 220 and the transparent layer 271. In the embodiment shown, the optical imaging device 1200 is back-illuminated and has an interconnection structure 212 disposed below the substrate 210. In some embodiments, the photoelectric elements 201, 202, 203 and 204 in each detection unit 250 are CMOS image sensors, which include an optical diode electrically connected to a transistor, and the transistor is electrically connected to the interconnection structure 212. In some embodiments, the optical diode is an organic optical diode. In this embodiment, the combination of materials and processes for the opaque layers 220, 230 and 240, the microlens 240A, the openings 222 and 231, the multilayer filter 211, the transparent layers 271 and 272, the substrate 210, the photoelectric elements 201, 202, 203 and 204, and the interconnection structure 212 are similar to those of Figure 2B and 2C The combination of materials and processes of the opaque layers 20, 30 and 40, the microlens 40A, the openings 22 and 31, the multilayer filter 11, the transparent layers 71 and 72, the substrate 210, the photoelectric elements 1, 2, 3 and 4, and the interconnection structure 12 of the optical imaging device 100 shown in FIG. Figures 2A to 2C The elements or features of the optical imaging device 100 are substantially not affected by the aforementioned differences from the optical imaging device 100, and their detailed description will be omitted below.

[0156] In the optical imaging device 1200, the array Fig. 10A , 10C In the rectangular embodiment shown in FIG10D , each group 250A includes four detection units 250 and an opening 231, and the opening 231 is shared by the four detection units 250. In other embodiments where the optical imaging device 1200 has other shapes, the number of detection units 250 in each group 250A may be different from four. In some embodiments, each group 250A includes a photoelectric element 201 of the first of the four detection units 250, a photoelectric element 202 of the second of the four detection units 250, a photoelectric element 203 of the third of the four detection units 250, and a photoelectric element 204 of the fourth of the four detection units 250. In FIG10D , each group 250A includes a photoelectric element 201 of the first of the four detection units 250, a photoelectric element 202 of the second of the four detection units 250, a photoelectric element 203 of the third of the four detection units 250, and a photoelectric element 204 of the fourth of the four detection units 250. Fig. 10C and 10DIn the embodiment of the group 250A, the photoelectric elements 201, 202, 203 and 204 are closer to the common opening 231 than other photoelectric elements. In this embodiment, in each group 250A, the four detection units 250 are arranged in a 2×2 array, and the common opening 231 is disposed above the center of the 2×2 array. In some embodiments, Fig. 10C and 10D The four detection units 250 of the group 250A shown are larger than the optical imaging device 1200 (shown in FIG. Fig. 10A ) not shown in Fig. 10C and 10D The other detection units 250 are also closer to Fig. 10C and 10D The common opening 231 is shown. In the embodiment shown, the common opening 231 overlaps four detection units 250 that are classified into the same group 250A.

[0157] In such Figures 10C to 10F In the exemplary group 250A shown, the four detection units 250 and the common opening 231 are configured to form a first light channel 261, a second light channel 262, a third light channel 263 and a fourth light channel 264. The first light channel 261 extends along a path from the microlens 240A of the fourth of the four detection units 250 through the common opening 231 to the photoelectric element 201 of the first of the four detection units 250, so as to guide the light 80 to be incident on the optical imaging device 1200 (shown in FIG. 1 ) along the same path. Fig. 10A ); the second optical channel 262 extends along a path from the microlens 240A of the third of the four detection units 250 through the common opening 231 to the photoelectric element 202 of the second of the four detection units 250, so as to guide the light 80 to be incident on the optical imaging device 1200 (shown in FIG. 1 ) along the same path. Fig. 10A ); the third optical channel 263 extends along a path from the microlens 240A of the second of the four detection units 250 through the common opening 231 to the photoelectric element 203 of the third of the four detection units 250, so as to guide the light 80 to be incident on the optical imaging device 1200 (shown in FIG. 1 ) along the same path. Fig. 10A ); the fourth optical channel 264 extends along a path from the microlens 240A of the first of the four detection units 250 through the common opening 231 to the photoelectric element 204 of the fourth of the four detection units 250, so as to guide the light 80 to be incident on the optical imaging device 1200 (shown in FIG. 1 ) along the same path. Fig. 10A ). In some embodiments, although not shown for clarity, Figures 10C to 10F , including, for example, Figures 10C to 10FThe detection unit 250 of the photoelectric element 201 shown as the endpoint of the first optical channel 261 may also be classified as belonging to other groups 250A. The photoelectric elements 202, 203 and 204 of this detection unit 250 may also be respectively classified as belonging to different other groups 250A and serve as endpoints of the second optical channel 262, the third optical channel 263 and the fourth optical channel 264 of these different other groups 250A.

[0158] The detection unit 250 may include a plurality of groups, for example Figures 10G to 10I A group 250B is shown based on the aspect of sharing microlenses 240A. Figure 10G Displayed in Fig. 10A A top view of an exemplary group 250B of the optical imaging device 1200, and Fig. 10H and 10I Display along Figure 10G Cross-sectional view of line BB and line CC.

[0159] In the optical imaging device 1200, the array Fig. 10A and 10G In the rectangular embodiment, each group 250B includes five detection units 250, and the microlens 240A of one of the five detection units 250 is configured to be shared by the other four of the five detection units 250. Fig.10I and 10H The light is guided from the shared microlens 240A to the photoelectric elements of the corresponding detection units 250 in each of the other four detection units 250 through the four openings 231. In other embodiments where the optical imaging device 1200 has other shapes, the number of detection units 250 in each group 250B may be different from five.

[0160] In some embodiments, each group 250B includes the photoelectric element 201 of the first of the other four detection units 250, the photoelectric element 202 of the second of the other four detection units 250, the photoelectric element 203 of the third of the other four detection units 250, and the photoelectric element 204 of the fourth of the other four detection units 250. Figure 10GIn the embodiment, nine detection units 250 are arranged in a 3×3 array, and group 250B includes the detection unit 250 at the center and the detection units 250 at the four corners of the 3×3 array. In the present embodiment, the microlens 240A of the detection unit 250 at the center is a photoelectric element commonly used to guide light to the detection units 250 at the four corners. In some embodiments, the photoelectric element of each of the detection units 250 at the four corners that is closest to the detection unit 250 at the center is designed to receive light from the microlens 240A of the detection units 250 at the four corners. In other embodiments, the photoelectric element of the detection unit 250 that is closest to the center can be replaced by one of the other photoelectric elements of the detection unit 250 at the same corner. In some embodiments, the four openings 231 overlap the detection unit 250 at the center and a detection unit 250 at a different corner, respectively. Figure 10G In the illustrated embodiment, the four openings 231 are respectively disposed at the opposite corners of the central detection unit 250 and above the detection units 250 at the corresponding corners.

[0161] In such Figures 10G to 10I In the exemplary group 250B shown, the five detection units 250 and the four openings 231 are configured to form a first light channel 261, a second light channel 262, a third light channel 263 and a fourth light channel 264. The first light channel 261 extends along a path from the common microlens 240A through the first of the four openings 231 to the photoelectric element 201 of the first of the detection units 250 at the four corners, so as to guide the light 80 to be incident on the optical imaging device 1200 (shown in FIG. 1 ) along the same path. Fig. 10A ); the second optical channel 262 extends from the common microlens 240A through the second of the four openings 231 to the photoelectric element 202 of the second of the detection units 250 at the four corners to guide the light 80 to be incident on the optical imaging device 1200 (shown in FIG. 1 ) along the same path. Fig. 10A ); the third optical channel 263 extends along the path from the common microlens 240A through the third of the four openings 231 to the photoelectric element 203 of the third of the detection units 250 at the four corners, so as to guide the light 80 to be incident on the optical imaging device 1200 (shown in FIG. 1 ) along the same path. Fig. 10A ); the fourth optical channel 264 extends along the path from the common microlens 240A through the fourth of the four openings 231 to the fourth photoelectric element 204 of the detection unit 250 at the four corners, so as to guide the light 80 to be incident on the optical imaging device 1200 (shown in FIG. 1 ) along the same path. Fig. 10A ).

[0162] In some embodiments, although not shown for clarity, Figures 10G to 10I , about Figure 10G The detection unit 250 in the center of the group 250B shown may also be classified as belonging to some other groups 250B and as one of the detection units 250 at the four corners; Figure 10G The detection units 250 at the four corners of the group 250B shown may also be classified as belonging to some other groups 250B and serve as one of the detection units 250 at the four corners thereof, or may serve as the detection unit 250 at the center thereof; Figure 10G The remaining four detection units 250 that are not classified into the illustrated group 250B may also be classified into some other groups 250B and serve as one of the four corner detection units 250 thereof, or may serve as the central detection unit 250 thereof.

[0163] For example, shown in Figures 10C to 10F The group 250A of the embodiment is shown in Figures 10G to 10I The classification of the group 250B of the embodiment is independent of each other, so that Fig. 10A Each detection unit 250 of the optical imaging device 1200 may be classified as some of the group 250A and some of the group 250B. Figure 10G As shown, the nine detection units 250 of the 3×3 array can also be grouped to provide four 2×2 arrays of detection units 250, and these 2×2 arrays can also be grouped as group 250A, such as shown in Figures 10C to 10F 250A. Figures 10C to 10F Any of the four detection units 250 of the illustrated exemplary group 250A may also be classified as belonging to some group 250B, such as Figures 10G to 10I One of the detection units 250 at the four corners of the illustrated exemplary group 250B may also be classified as belonging to another group 250B as the detection unit 250 at the center thereof.

[0164] In the Figures 10B to 10I In the embodiment, the four photoelectric elements in each detection unit 250 that are not covered by the opaque layer 220 are effective and receive the light 80 from the corresponding microlens 240A. In some embodiments, some photoelectric elements in a specific one or some detection units 250 are not equipped with microlenses for forming an optical channel connected thereto, and such photoelectric elements are identified as dummy photoelectric elements, which are set to substantially not receive light. In some embodiments, the dummy photoelectric elements are covered by the opaque layer 220 and cannot be displayed in the top view to avoid noise input caused by unplanned lighting.

[0165] exist Fig. 10A In the embodiment shown in the top view of FIG. 1 , only one or two photoelectric elements of the peripheral detection unit 255 are shown, and the photoelectric elements 201, 202, 203 and 204 of the inner detection unit 259 are shown as being effective and receiving light from the corresponding microlens 240A. In the corner detection unit 251, only the photoelectric element 201 thereof is effective and receiving light from the corresponding microlens 240A, while the photoelectric elements 202, 203 and 204 are dummy and are covered by an opaque layer (e.g., as shown in FIG. 1 ). Fig.10F The opaque layer 220) completely covers and is not shown in Fig. 10A In some embodiments, a cross-sectional view showing any one of the optoelectronic elements 202, 203 and 204 of the corner detection unit 251 is equivalent to, for example, showing that the optoelectronic element 4 is completely covered by the opaque layer 20. Figure 6B . Similarly, in the corner detection unit 252, only its photoelectric element 202 is effective and receives light, while the photoelectric elements 201, 203 and 204 are set not to receive light. Similarly, in the corner detection unit 253, only its photoelectric element 203 is effective and receives light, while the photoelectric elements 201, 202 and 204 are set not to receive light. Similarly, in the corner detection unit 254, only its photoelectric element 204 is effective and receives light, while the photoelectric elements 201, 202 and 203 are set not to receive light. Similarly, in the edge detection unit 256X, only its photoelectric elements 201 and 202 are effective and receive light, while the photoelectric elements 203 and 204 are set not to receive light. Similarly, in the edge detection unit 256Y, only its photoelectric elements 201 and 203 are effective and receive light, while the photoelectric elements 202 and 204 are set not to receive light. Similarly, in edge detection unit 257X, only its photoelectric elements 203 and 204 are effective to receive light, while photoelectric elements 201 and 202 are set not to receive light. Similarly, in edge detection unit 257Y, only its photoelectric elements 202 and 204 are effective to receive light, while photoelectric elements 201 and 203 are set not to receive light.

[0166] As described above, in the disclosure of the present invention, an optical imaging device is provided. By receiving obliquely incident light by a photoelectric element, the optical imaging device can provide an expanded field of view. Therefore, the size of a chip provided with the optical imaging device can be reduced.

[0167] The foregoing text summarizes the features of many embodiments so that a person of ordinary skill in the art can better understand the embodiments of the present invention from various aspects. A person of ordinary skill in the art should understand and can easily design or modify other processes and structures based on the embodiments of the present invention to achieve the same purpose and / or the same advantages as the embodiments introduced herein. A person of ordinary skill in the art should also understand that these equivalent structures do not deviate from the spirit and scope of the invention of the embodiments of the present invention. Various changes, substitutions or modifications may be made to the embodiments of the present invention without departing from the spirit and scope of the invention of the embodiments of the present invention.

Claims

1. An optical imaging device, comprising a first detection unit, wherein the first detection unit comprises: A plurality of first pixels, comprising a plurality of first photoelectric elements; a first opaque layer, above the plurality of first photoelectric elements, the first opaque layer having at least one opening; at least one first microlens over the first opaque layer, wherein the at least one first microlens overlaps at least one of the plurality of first pixels; as well as at least one first dummy pixel having a first dummy photoelectric element, wherein the first dummy photoelectric element is covered by a second opaque layer, and the at least one first dummy pixel is between two of the plurality of first pixels; The second opaque layer is between the first opaque layer and the first dummy photoelectric element.

2. An optical imaging device as claimed in claim 1, wherein the plurality of first photoelectric elements, the at least one opening and the at least one first microlens are configured to allow light to propagate from the at least one first microlens to the plurality of first photoelectric elements, and the light is incident on the plurality of first photoelectric elements at an incident angle greater than 0 degrees to 40 degrees.

3. An optical imaging device as claimed in claim 1, wherein the at least one opening overlaps with the plurality of first pixels, and the plurality of first photoelectric elements, the at least one opening and the at least one first microlens are configured to allow light to propagate through the at least one opening to the plurality of first photoelectric elements, and the light is incident on the plurality of first photoelectric elements at an incident angle greater than 0 degrees to 40 degrees.

4. The optical imaging device of claim 1, further comprising a second detection unit, wherein the second detection unit comprises: A plurality of second pixels, comprising a plurality of second photoelectric elements; The first opaque layer is above the plurality of second photoelectric elements, and the first opaque layer has the at least one opening; as well as At least one second microlens is above the first opaque layer, wherein the at least one opening overlaps at least one of the plurality of first pixels and at least one of the plurality of second pixels.

5. An optical imaging device as claimed in claim 4, wherein the first detection unit and the second detection unit are configured to allow light to propagate from the at least one first microlens through the at least one opening to one of the plurality of second photoelectric elements, and the light is incident on the one of the plurality of second photoelectric elements at an incident angle greater than 0 degrees to 40 degrees.

6. The optical imaging device of claim 1, further comprising a third detection unit at an edge of the optical imaging device, wherein the third detection unit comprises: A plurality of third pixels, comprising a plurality of third photoelectric elements; The first opaque layer is above the plurality of third photoelectric elements, and the first opaque layer has at least one third opening; as well as At least one third microlens is above the first opaque layer, wherein the at least one third microlens overlaps at least one of the plurality of third pixels, wherein at least one of the plurality of third photoelectric elements is covered by a second opaque layer.

7. The optical imaging device of claim 1, further comprising: a multi-layer filter between the plurality of first photoelectric elements and the first opaque layer; as well as A transparent layer is between the multi-layer filter and the first opaque layer.

8. The optical imaging device of claim 1, further comprising: a substrate, the substrate comprising a front side and a back side, wherein the plurality of first optoelectronic components are embedded in the back side of the substrate; as well as An interconnect structure is above the front side of the substrate, wherein the interconnect structure is electrically connected to the plurality of first optoelectronic components.

9. The optical imaging device of claim 1, further comprising a transparent layer between the first opaque layer and the at least one first microlens.

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