Photonic crystal face emitting laser structure
CN113644547BActive Publication Date: 2026-06-23INTERFACE OPTOELECTRONICS (SHENZHEN) CO LTD +2
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INTERFACE OPTOELECTRONICS (SHENZHEN) CO LTD
- Filing Date
- 2021-08-09
- Publication Date
- 2026-06-23
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Figure CN113644547B_ABST
Abstract
A photonic crystal surface-emitting laser structure includes a substrate, an N-type cladding layer, an active layer, a refractive index matching layer, and a photonic crystal structure. The N-type cladding layer is disposed on the substrate. The active layer is disposed on the N-type cladding layer. The refractive index matching layer is disposed on the N-type cladding layer and surrounds the active layer. The refractive index matching layer is electrically insulating, and an equivalent refractive index of the refractive index matching layer is substantially the same as an equivalent refractive index of the active layer. The photonic crystal structure is disposed on the active layer and the refractive index matching layer. By virtue of the above structure, a divergence angle and a threshold current of the laser can be reduced.
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