Display device

Abstract

A display device comprising: a first substrate on which a display region and a non-display region are defined; a light-emitting element over the first substrate and in the display region; a second substrate facing the first substrate and over the light-emitting element; a color filter over a surface of the second substrate facing the first substrate and overlapping with the light-emitting element; a wavelength conversion pattern over the color filter; a sealing member between the first substrate and the second substrate and in the non-display region; and a heat sink pattern in the non-display region, wherein the heat sink pattern is between the sealing member and the display region when viewed from a plan view.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0069172, filed on June 8, 2020, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Some exemplary embodiments of this disclosure relate to a display device. Background Technology

[0004] Display devices have become increasingly important with the evolution of multimedia technology. Therefore, various display devices, such as liquid crystal displays (LCDs) and organic light-emitting diode displays (OLEDs), can be used in a wide range of electronic devices.

[0005] In display devices, self-emissive display devices include self-emissive elements, such as organic light-emitting elements (OLEDs). A self-emissive element may include two opposing electrodes and an emitting layer inserted between the two electrodes. For an organic light-emitting element as a self-emissive element, electrons and holes supplied from the two electrodes recombine in the emitting layer to generate excitons. The generated excitons relax from an excited state to a ground state and can therefore emit light.

[0006] Such self-emissive display devices typically do not utilize a separate light source such as a backlight unit, and therefore, compared to alternative display devices, they generally consume relatively less power, can be relatively light and thin, and can possess high-quality characteristics such as relatively wide viewing angles, high brightness and contrast, and relatively fast response times. Therefore, organic light-emitting display devices are gaining attention as the next generation of display devices.

[0007] The information disclosed in this background section is only intended to enhance the understanding of the background art, and therefore the information discussed in this background section does not necessarily constitute prior art. Summary of the Invention

[0008] Aspects of some example embodiments of this disclosure include a display device that can prevent or reduce the introduction of static electricity into the display area.

[0009] These and other aspects and features of embodiments according to this disclosure will become more apparent to those skilled in the art once the following detailed description and claims have been reviewed.

[0010] According to some exemplary embodiments of the present invention, a display device includes: a first substrate, on which a display area and a non-display area are defined; a light-emitting element, on the first substrate and in the display area; a second substrate, facing the first substrate and above the light-emitting element; a color filter, on the surface of the second substrate facing the first substrate and overlapping the light-emitting element; a wavelength conversion pattern on the color filter; a sealing member, in the non-display area and between the first and second substrates; and a heat sink pattern, in the non-display area, wherein the heat sink pattern is between the sealing member and the display area when viewed from a plan view or top surface (e.g., from a direction orthogonal to or perpendicular to the display surface of the display device).

[0011] According to some example embodiments, a display device includes: a first substrate, on which a display area and a non-display area are defined; a light-emitting element on the first substrate and in the display area; a second substrate facing the first substrate and above the light-emitting element; a sealing member between the first substrate and the second substrate and disposed in the non-display area; and a heat sink pattern in the non-display area, wherein the heat sink pattern is between the sealing member and the display area when viewed from a plan view or a top surface, wherein the heat sink pattern is electrically isolated from the light-emitting element, and wherein the heat sink pattern is configured to induce static electricity.

[0012] According to some example embodiments of this disclosure, it may be possible to prevent or reduce the introduction of static electricity into the display area.

[0013] It should be noted that the features of embodiments according to this disclosure are not limited to those described above, and other features of embodiments according to this disclosure will become more apparent to those skilled in the art from the following description. Attached Figure Description

[0014] The above and other aspects and features of this disclosure will become more apparent from a more detailed description of some exemplary embodiments thereof with reference to the accompanying drawings.

[0015] Figure 1 This is a cross-sectional view used to illustrate the stacked structure of a display device according to some example embodiments of the present disclosure.

[0016] Figure 2 This is a plan view of a display device according to some example embodiments of the present disclosure.

[0017] Figure 3 yes Figure 2 A magnified plan view of part Q1, more specifically, according to some example embodiments. Figure 2 A plan view of the display substrate included in the display device.

[0018] Figure 4 yes Figure 2A magnified plan view of part Q1, more specifically, according to some example embodiments. Figure 2 A plan view of the color conversion substrate included in the display device.

[0019] Figure 5 Based on some example embodiments Figure 3 The example shown is a modified floor plan.

[0020] Figure 6 This illustrates some example embodiments. Figure 4 The example shown is a modified floor plan.

[0021] Figure 7 Based on some example embodiments Figure 2 A magnified plan view of part Q3.

[0022] Figure 8 yes Figure 2 A magnified plan view of part of Q5.

[0023] Figure 9 It is along Figure 3 and Figure 4 A cross-sectional view of a display device according to some example embodiments of the present disclosure, taken by line X3-X3'.

[0024] Figure 10 yes Figure 9 A magnified cross-sectional view of part of Q7.

[0025] Figure 11 It shows Figure 10 The modified cross-sectional view of the structure shown is illustrated.

[0026] Figure 12 It is along Figure 7 A cross-sectional view of a display device according to some example embodiments of the present disclosure, taken by line X3-X3'.

[0027] Figure 13 It is along Figure 8 A cross-sectional view of a display device according to some example embodiments of the present disclosure, taken by line X5-X5'.

[0028] Figure 14 This is a plan view showing the layout of a third color filter and a color pattern in a color conversion substrate of a display device according to some example embodiments of the present disclosure.

[0029] Figure 15 This is a plan view showing the layout of a light-blocking member in a color conversion substrate of a display device according to some example embodiments of the present disclosure.

[0030] Figure 16This is a plan view showing the layout of a first color filter in a color conversion substrate of a display device according to some example embodiments of the present disclosure.

[0031] Figure 17 This is a plan view showing the layout of a second color filter in a color conversion substrate of a display device according to some example embodiments of the present disclosure.

[0032] Figure 18 This is a plan view showing the layout of a dam pattern, a first wavelength conversion pattern, a second wavelength conversion pattern, and a light-transmitting pattern in a color conversion substrate of a display device according to some example embodiments of the present disclosure.

[0033] Figure 19 This is a view illustrating the path through which static electricity is introduced from the outside according to some example embodiments of this disclosure.

[0034] Figure 20 This is a cross-sectional view of a display device according to some example embodiments of the present disclosure.

[0035] Figure 21 This is a cross-sectional view of a display device according to some example embodiments of the present disclosure. Detailed Implementation

[0036] The specific structural and functional descriptions of the embodiments of the present invention disclosed herein are for illustrative purposes only. The present invention can be embodied in many different forms without departing from its spirit and essential features. Therefore, the embodiments of the present invention are disclosed for illustrative purposes only and should not be construed as limiting the present invention. That is, the present invention is limited only by the scope of the claims.

[0037] It will be understood that when an element is referred to as being related to another element, such as being “coupled” or “connected” to another element, it may be directly coupled or connected to the other element, or there may be an intermediate element between them. Conversely, it should be understood that when an element is referred to as being directly related to another element, such as being “directly coupled” or “directly connected” to another element, there is no intermediate element. Other expressions describing relationships between elements, such as “between,” “directly between,” “adjacent,” or “directly adjacent,” should be interpreted in the same manner.

[0038] Throughout the specification, the same reference numerals will refer to the same or similar parts.

[0039] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or section from another. Therefore, without departing from the teachings of this document, the first element, component, region, layer, or section discussed below may be referred to as the second element, component, region, layer, or section.

[0040] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, “a,” “the,” and “at least one” do not indicate a limitation of quantity and are intended to include both singular and plural forms unless the context clearly indicates otherwise. For example, “an element” has the same meaning as “at least one element” unless the context clearly indicates otherwise. “At least one” should not be construed as a limiting “a.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. It will be further understood that, when used in this specification, the terms “comprising” or “including” and / or variations thereof specify the presence of the stated features, regions, integrals, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, regions, integrals, steps, operations, elements, components, and / or groups thereof.

[0041] Furthermore, relative terms such as “down” or “bottom” and “up” or “top” may be used herein to describe the relationship between one element and another as shown in the figures. It will be understood that, in addition to the orientation depicted in the figures, relative terms are also intended to encompass different orientations of the device. For example, if a device in a figure is flipped, an element described as being “down” to other elements is subsequently oriented “up” to other elements. Thus, the example term “down” can encompass both “down” and “up” orientations depending on the specific orientation of the figure. Similarly, if a device in a figure is flipped, an element described as being “below” or “under” other elements is subsequently oriented “above” to other elements. Thus, the example term “below” or “under” can encompass both “up” and “down” orientations.

[0042] Given the problematic measurement and the errors associated with measuring a particular quantity (i.e., limitations of the measurement system), the terms "about" or "approximately" as used herein include the stated value and mean within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art. For example, "about" may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0043] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will also be understood that terms such as those defined in common dictionaries shall be interpreted as having the same meaning as they have in the relevant field and in the context of this disclosure, and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0044] This document describes aspects of some exemplary embodiments with reference to schematic cross-sectional diagrams as idealized embodiments. Therefore, variations in the illustrated shapes can be expected, for example, due to manufacturing techniques and / or tolerances. Consequently, the embodiments described herein should not be construed as limited to the specific shapes of the regions shown herein, but rather include deviations in shape, for example, due to manufacturing processes. For example, regions illustrated or described as flat may generally have rough and / or non-linear characteristics. Furthermore, sharp corners shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to show the precise shapes of the regions, nor are they intended to limit the scope of the claims.

[0045] Hereinafter, some exemplary embodiments of the invention will be described with reference to the accompanying drawings.

[0046] Figure 1 This is a cross-sectional view used to illustrate the stacked structure of a display device according to some example embodiments of the present disclosure.

[0047] Figure 1 The display device shown can be used in a variety of electronic devices, including small and medium-sized electronic devices such as tablet PCs, smartphones, vehicle navigation units, cameras, central information displays (CIDs) installed in vehicles, wrist-worn electronic devices (e.g., smartwatches), personal digital assistants (PDAs), portable multimedia players (PMPs), and game consoles, as well as large and medium-sized electronic devices such as televisions, electronic billboards, monitors, personal computers, and laptop computers. It should be understood that the electronic devices listed above are merely illustrative, and the display device 1 can be used in a variety of other electronic devices without departing from the spirit and scope of the embodiments according to this disclosure.

[0048] Display device 1 may include a display area DA for displaying images and a non-display area NDA for not displaying images. According to some example embodiments, the non-display area NDA may be positioned around the display area DA (e.g., outside the coverage area of ​​the display area DA or on the periphery of the display area DA) to surround the display area DA. The image displayed in the display area DA can be viewed by a user from the side indicated by the arrow in the Z-direction.

[0049] According to some example embodiments, the stacked structure of the display device 1 may include a display substrate 10 and a color conversion substrate 30 opposite to the display substrate 10, and may further include a sealing member 50 for coupling the display substrate 10 and the color conversion substrate 30, and a filler 70 for filling the space or region between the display substrate 10 and the color conversion substrate 30, such as Figure 1 As shown in the image.

[0050] The display substrate 10 may include elements and circuitry for displaying images, such as pixel circuitry including switching elements, pixel defining layers for defining emitting and non-emitting regions (described later) in the display area DA, and self-emissive elements. According to some example embodiments, the self-emissive element may include at least one of organic light-emitting diodes (OLEDs), quantum dot OLEDs, inorganic micro-LEDs (e.g., microLEDs), and inorganic nano-LEDs (e.g., nanoLEDs) having nanoscale dimensions. In the following description, for ease of illustration, organic light-emitting diodes will be described as examples of self-emissive elements, but embodiments according to this disclosure are not limited thereto.

[0051] A color conversion substrate 30 may be disposed on a display substrate 10 and may face the display substrate 10. According to some example embodiments, the color conversion substrate 30 may include a color conversion pattern that converts the color of incident light. According to some example embodiments, the color conversion substrate 30 may include a color filter and / or a wavelength conversion pattern as a color conversion pattern. According to some example embodiments, the color conversion substrate 30 may include both a color filter and a wavelength conversion pattern.

[0052] A sealing member 50 may be disposed between the display substrate 10 and the color conversion substrate 30 in the non-display area NDA. The sealing member 50 may be arranged or formed along the edges of the display substrate 10 and the color conversion substrate 30 in the non-display area NDA to surround the display area DA when viewed from a plan view or top view (e.g., when viewing the display surface of the display device 1). The display substrate 10 and the color conversion substrate 30 may be coupled to each other through the sealing member 50.

[0053] According to some example embodiments, the sealing member 50 may be made of organic material or any suitable sealing material for bonding the color conversion substrate 30 to the display substrate 10 and for preventing or reducing water, air, or other contaminants from contaminating the display substrate 10 or the color conversion substrate 30. For example, the sealing member 50 may be made of epoxy resin, but is not limited thereto.

[0054] The filler 70 can be disposed in the space between the display substrate 10 and the color conversion substrate 30, which is surrounded by the sealing member 50. The filler 70 can be used to fill the space between the display substrate 10 and the color conversion substrate 30.

[0055] According to some example embodiments, the filler 70 may be made of a light-transmitting material. According to some example embodiments, the filler 70 may be made of an organic material. For example, the filler 70 may be made of a silicon-based organic material, an epoxy-based organic material, or a mixture of silicon-based organic materials, epoxy-based organic materials, etc.

[0056] According to some example embodiments, the filler 70 may be made of a material having a substantially zero extinction coefficient. The refractive index is related to the extinction coefficient, and therefore the refractive index decreases with the extinction coefficient. If the refractive index is 1.7 or less, the extinction coefficient can converge to substantially zero. According to some example embodiments, the filler 70 may be made of a material having a refractive index of 1.7 or less. Therefore, it is possible to prevent or reduce the transmission and absorption of light provided by the self-emissive element through the filler 70. According to some example embodiments, the filler 70 may be made of an organic material having a refractive index of 1.4 to 1.6.

[0057] Figure 2 This is a plan view of a display device according to some example embodiments of the present disclosure. Figure 3 yes Figure 2 A magnified plan view of part of Q1, more specifically, Figure 2 A plan view of the display substrate included in the display device. Figure 4 yes Figure 2 A magnified plan view of part of Q1, more specifically, Figure 2 A plan view of the color conversion substrate included in the display device. Figure 5 It shows Figure 3 The example shown is a modified floor plan. Figure 6 It shows Figure 4 The example shown is a modified floor plan. Figure 7 yes Figure 2 A magnified plan view of part Q3. Figure 8 yes Figure 2 A magnified plan view of part of Q5.

[0058] Combination Figure 1 refer to Figures 2 to 8 According to some example embodiments, such as Figure 2As shown, when viewed from above or in a plan view (e.g., in a direction orthogonal to or perpendicular to the surface), the display device 1 may be formed in a rectangular shape. The display device 1 may include two sides extending in a first direction X (i.e., first side L1 and third side L3) and two sides extending in a second direction Y intersecting the first direction X (i.e., second side L2 and fourth side L4). Although the corners where the sides meet may form right angles, this disclosure is not limited thereto. According to some example embodiments, the lengths of the first side L1 and the third side L3 may differ from the lengths of the second side L2 and the fourth side L4. For example, the first side L1 and the third side L3 may be longer than the second side L2 and the fourth side L4. The shape of the display device 1 when viewed from above is not limited to that shown in the figures. The display device 1 may have a circular shape or other shapes.

[0059] According to some example embodiments, the display device 1 may further include a flexible circuit board (FPC) and a driver chip (IC).

[0060] like Figure 3 As shown, in the display area DA, multiple emitting areas and non-emitting areas NLA can be defined on the display substrate 10.

[0061] According to some example embodiments, a first emitting region LA1, a second emitting region LA2, and a third emitting region LA3 may be defined within a display region DA of the display substrate 10. Light generated in the light-emitting elements of the display substrate 10 is emitted from the display substrate 10 in the emitting regions LA1, LA2, and LA3. No light is emitted from the display substrate 10 in the non-emitting region NLA. According to some example embodiments, the non-emitting region NLA may surround the first emitting region LA1, the second emitting region LA2, and the third emitting region LA3 within the display region DA.

[0062] According to some example embodiments, the light emitted from the first emission region LA1, the second emission region LA2, and the third emission region LA3 may be light of a third color. According to some example embodiments, the third color light may be blue light and may have a peak wavelength in the range of approximately 440 nm to 480 nm. As used herein, peak wavelength refers to the wavelength at which the light intensity is maximum.

[0063] According to some example embodiments, the first emission region LA1, the second emission region LA2, and the third emission region LA3 can form a single group, and multiple such groups can be defined in the display region DA.

[0064] In some embodiments, such as Figure 3As shown, the first transmission region LA1, the second transmission region LA2, and the third transmission region LA3 can be arranged sequentially along the first direction X. According to some example embodiments, the first transmission region LA1, the second transmission region LA2, and the third transmission region LA3 can form a single group and can be repeatedly arranged along the first direction X and the second direction Y.

[0065] However, it should be understood that this disclosure is not limited thereto. The arrangement of the first launch area LA1, the second launch area LA2, and the third launch area LA3 can be changed in various ways. For example, as Figure 5 As shown, the first emission region LA1 and the second emission region LA2 can be adjacent to each other along the first direction X, while the third emission region LA3 can be set on one side of the first emission region LA1 and the second emission region LA2 along the second direction Y.

[0066] In the following description, the first transmission area LA1, the second transmission area LA2, and the third transmission area LA3 will be described as follows: Figure 3 An example of the arrangement shown.

[0067] like Figure 4 As shown, in the display area DA, multiple light-transmitting areas and light-blocking areas BA can be defined within the color conversion substrate 30. In the light-transmitting areas, light emitted from the display substrate 10 can pass through the color conversion substrate 30 to be provided to the outside of the display device 1. In the light-blocking areas BA, light emitted from the display substrate 10 cannot pass through the light-blocking areas BA.

[0068] According to some example embodiments, the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 can be defined on the color conversion substrate 30.

[0069] The first light-transmitting region TA1 may have a size equal to or overlapping with the first emitting region LA1. Similarly, the second light-transmitting region TA2 may have a size equal to or overlapping with the second emitting region LA2, and the third light-transmitting region TA3 may have a size equal to or overlapping with the third emitting region LA3.

[0070] According to some example embodiments, when such Figure 3 When the first emitting region LA1, the second emitting region LA2, and the third emitting region LA3 shown are arranged sequentially along the first direction X, the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 can also be arranged as follows: Figure 4 The arrangement shown is sequential along the first direction X.

[0071] Alternatively, when such Figure 5 When the first emission region LA1 and the second emission region LA2 are adjacent to each other in the first direction X, and the third emission region LA3 is disposed on one side of the first emission region LA1 and the second emission region LA2 in the second direction Y, the first light-transmitting region TA1 and the second light-transmitting region TA2 are adjacent to each other in the first direction X, and the third light-transmitting region TA3 can be disposed on one side of the first light-transmitting region TA1 and the second light-transmitting region TA2 in the second direction Y.

[0072] According to some example embodiments, light of a third color provided from the display substrate 10 can pass through the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 to exit the display device 1. In the following description, the light exiting the display device 1 through the first light-transmitting region TA1 is referred to as first emitted light, the light exiting the display device 1 through the second light-transmitting region TA2 is referred to as second emitted light, and the light exiting the display device 1 through the third light-transmitting region TA3 is referred to as third emitted light. The first emitted light can be light of a first color, the second emitted light can be light of a second color different from the first color, and the third emitted light can be light of a third color. According to some example embodiments, the third color light can be blue light having a peak wavelength in the range of approximately 440 nm to 480 nm, as described above, and the first color light can be red light having a peak wavelength in the range of approximately 610 nm to 650 nm. Furthermore, the second color light can be green light having a peak wavelength in the range of approximately 510 nm to 550 nm.

[0073] The light-blocking area BA can be disposed in the display area DA surrounding the first light-transmitting area TA1, the second light-transmitting area TA2, and the third light-transmitting area TA3. According to some example embodiments, the light-blocking area BA can surround the first light-transmitting area TA1, the second light-transmitting area TA2, and the third light-transmitting area TA3. Furthermore, the light-blocking area BA can also be disposed in the non-display area NDA of the display device 1.

[0074] Return to reference Figure 2 The dam component DM and the sealing component 50 can be placed in the non-display area NDA of the display device 1.

[0075] The dam component DM can block the overflow of organic materials (or monomers) during the process of forming the encapsulation layer disposed in the display area DA, thereby preventing the organic materials in the encapsulation layer from extending toward the edge of the display device 1.

[0076] According to some example embodiments, the dam component DM can be formed to completely surround the display area DA when viewed from above.

[0077] The sealing member 50 can be coupled to the display substrate 10 and the color conversion substrate 30 as described above.

[0078] The sealing member 50 can be disposed in the non-display area NDA outside the dam member DM, and can be formed to completely surround the dam member DM and the display area DA when viewed from above.

[0079] The non-display area NDA of the display device 1 may include a pad area PDA, and multiple connection pads PD may be set in the pad area PDA.

[0080] According to some example embodiments, the connection pad PD can be positioned adjacent to the long side of the non-display area NDA, and for example, it can be positioned adjacent to the first side L1 in the non-display area NDA. The connection pad PD can be electrically connected to pixel circuits, etc., disposed in the display area DA via connection lines or the like.

[0081] According to some example embodiments, the connection pad PD can be located outside the sealing member 50. In other words, the connection pad PD can be located further away from the display area DA than the sealing member 50. According to some example embodiments, the connection pad PD can be located between the sealing member 50 and the first side L1 of the display device 1.

[0082] The display substrate 10 of the display device 1 (see example) Figure 1 It may include dam components DM and connecting pads PD.

[0083] The flexible printed circuit board (FPC) can be connected to the connection pads (PD). The flexible printed circuit board (FPC) can display the substrate 10 (see example). Figure 1 The circuit board is electrically connected to the display device 1 to provide signals, power, etc. for driving the display device 1. For example, a constant voltage can be applied to the voltage supply line VSL (see example) via at least one of the connection pads PD. Figure 12 The constant voltage applied to the voltage supply line VSL can be, for example, a low-level voltage of approximately 0V or lower.

[0084] A driver chip IC can be electrically connected to a circuit board or similar device to receive data and signals. According to some example embodiments, the driver chip IC may include a data driver chip and can receive data control signals and image data from the circuit board to generate and output data voltages associated with the image data.

[0085] According to some example embodiments, the driver chip IC can be mounted on the flexible circuit board (FPC). For example, the driver chip IC can be mounted on the FPC using known chip-on-film (COF) technology.

[0086] Data voltage supplied from the driver chip IC, supply voltage supplied from the circuit board, etc., can be transmitted to the display substrate 10 via the flexible printed circuit board (FPC) and connection pads (PD) (see example). Figure 1 ) pixel circuit.

[0087] The structure of display device 1 will be described in more detail below.

[0088] Figure 9 It is along Figure 3 and Figure 4 A cross-sectional view of a display device according to some example embodiments of the present disclosure, taken by line X3-X3'. Figure 10 yes Figure 9 A magnified cross-sectional view of part of Q7. Figure 11 It shows Figure 10 The modified cross-sectional view of the structure shown is illustrated. Figure 12 It is along Figure 7 A cross-sectional view of a display device according to some example embodiments of the present disclosure, taken by line X3-X3'. Figure 13 It is along Figure 8 A cross-sectional view of a display device according to some example embodiments of the present disclosure, taken by line X5-X5'.

[0089] Combination Figures 1 to 8 refer to Figures 9 to 13 The display device 1 may include a display substrate 10 and a color conversion substrate 30 as described above, and may further include a filler 70 disposed between the display substrate 10 and the color conversion substrate 30.

[0090] The display substrate 10 will be described below.

[0091] The first substrate 110 may be made of a light-transmitting material. According to some example embodiments, the first substrate 110 may be a glass substrate or a plastic substrate. When the first substrate 110 is a plastic substrate, the first substrate 110 may be flexible.

[0092] According to some example embodiments, multiple emission regions LA1, LA2 and LA3 and a non-emission region NLA can be defined on the first substrate 110 in the display region DA, as described above.

[0093] According to some example embodiments, the first side L1, the second side L2, the third side L3, and the fourth side L4 of the display device 1 may be the same as the four sides of the first substrate 110. That is, the first side L1, the second side L2, the third side L3, and the fourth side L4 of the display device 1 may be referred to as the first side L1, the second side L2, the third side L3, and the fourth side L4 of the first substrate 110, respectively.

[0094] A buffer layer 111 may be further disposed on the first substrate 110. The buffer layer 111 may be disposed on the first substrate 110 in the display area DA and the non-display area NDA. The buffer layer 111 can prevent foreign substances or moisture from penetrating the first substrate 110. For example, the buffer layer 111 may include materials such as SiO2 and SiN. x Inorganic materials such as SiON can be composed of single or multiple layers.

[0095] A light-blocking metal layer BML can be disposed on the buffer layer 111. The light-blocking metal layer BML can block external light or light from the light-emitting element from entering the semiconductor layer ACT, which will be described later, thereby preventing or reducing light-induced leakage current in the thin-film transistor TL, which will be described later.

[0096] According to some example embodiments, the light-blocking metal layer (BML) can be made of a light-blocking and conductive material. For example, the light-blocking metal layer (BML) can include a single material or an alloy of metals such as silver (Ag), nickel (Ni), gold (Au), platinum (Pt), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), and neodymium (Nd). According to some example embodiments, the light-blocking metal layer (BML) can be composed of a single layer or multiple layers. For example, when the light-blocking metal layer (BML) is composed of multiple layers, it can be, but is not limited to, a stacked structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO) or a stacked structure of titanium (Ti) / copper (Cu) / aluminum oxide (Al2O3).

[0097] According to some example embodiments, multiple light-blocking metal layers (BMLs) can be provided. The number of light-blocking metal layers (BMLs) can be equal to the number of semiconductor layers (ACTs). The light-blocking metal layers (BMLs) can overlap with the semiconductor layers (ACTs). According to some example embodiments, the width of the light-blocking metal layers (BMLs) can be greater than the width of the semiconductor layers (ACTs).

[0098] According to some example embodiments, the light-blocking metal layer BML may be part of a data line, a voltage supply line, a line electrically connecting a thin-film transistor to the thin-film transistor TL shown in the figures, etc. According to some example embodiments, the light-blocking metal layer BML may be made of a material with lower resistance compared to the second conductive layer or the source electrode SE and drain electrode DE included in the second conductive layer.

[0099] The first insulating layer 113 can be disposed on the light-blocking metal layer BML. According to some example embodiments, the first insulating layer 113 can be disposed in the display area DA and the non-display area NDA. The first insulating layer 113 can cover the light-blocking metal layer BML. According to some example embodiments, the first insulating layer 113 may include materials such as SiO2 and SiN. xInorganic materials such as SiON, Al2O3, TiO2, Ta2O, HfO2 and ZrO2.

[0100] The semiconductor layer ACT can be disposed on the first insulating layer 113. According to some example embodiments, the semiconductor layer ACT can be disposed in the first emission region LA1, the second emission region LA2, and the third emission region LA3 in the display region DA, respectively.

[0101] According to some example embodiments, the semiconductor layer ACT may include an oxide semiconductor. For example, the semiconductor layer ACT may be made of Zn oxide, In-Zn oxide, Ga-In-Zn oxide, etc., which are Zn oxide-based materials, and may be an IGZO (In-Ga-Zn-O) semiconductor in which metals such as indium (In) and gallium (Ga) are contained. However, it should be understood that this disclosure is not limited thereto. The semiconductor layer ACT may include amorphous silicon or polycrystalline silicon.

[0102] According to some example embodiments, the semiconductor layer ACT can be arranged to overlap with the light-blocking metal layer BML, thereby suppressing the generation of photocurrent in the semiconductor layer ACT.

[0103] A first conductive layer can be disposed on the semiconductor layer ACT and may include a gate electrode GE and a first gate metal WR1. The gate electrode GE can be disposed in the display area DA to overlap with the corresponding semiconductor layer ACT. Figure 12 As shown, the first gate metal WR1 may include a connection pad PD (see example...) Figure 2 ) and set in the display area DA (see example Figure 2 It is a part of the wires that electrically connect the components (such as thin-film transistors and light-emitting elements) in a device.

[0104] Considering adhesion to adjacent layers, surface flatness of the layers to be stacked, and processability, the gate electrode GE and the first gate metal WR1 may include at least one of the following materials: aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu), and may be composed of a single layer or multiple layers.

[0105] In the display area DA, the gate insulating layer 115 can be disposed between the semiconductor layer ACT and the first conductive layer or between the semiconductor layer ACT and the gate electrode GE. According to some example embodiments, the gate electrode GE and the gate insulating layer 115 can be used as a mask for shielding the channel region of the semiconductor layer ACT, and the width of the gate electrode GE and the width of the gate insulating layer 115 can be smaller than the width of the semiconductor layer ACT.

[0106] According to some example embodiments, the gate insulating layer 115 may not consist of a single layer formed over the entire surface of the first substrate 110, but may be formed in a partially patterned shape. According to some example embodiments, the width of the patterned gate insulating layer 115 may be greater than the width of the gate electrode GE or the first conductive layer.

[0107] According to some example embodiments, the gate insulating layer 115 may include an inorganic material. For example, the gate insulating layer 115 may include the inorganic materials listed above that serve as the material of the first insulating layer 113.

[0108] In the non-display area NDA, the gate insulating layer 115 can be disposed below the first gate metal WR1.

[0109] A second insulating layer 117 covering the semiconductor layer ACT and the gate electrode GE can be formed on the gate insulating layer 115. The second insulating layer 117 can be disposed in the display area DA and the non-display area NDA. According to some example embodiments, the second insulating layer 117 can be used as a planarization layer to provide a flat surface.

[0110] According to some example embodiments, the second insulating layer 117 may include organic materials. For example, the second insulating layer 117 may include, but is not limited to, at least one of the following: acrylic acid (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyaryl ether, heterocyclic polymer, parylene, fluoropolymer, epoxy resin, benzocyclobutene resin, siloxane resin, and silane resin.

[0111] The second conductive layer may be formed on the second insulating layer 117, and the second conductive layer may include a source electrode SE, a drain electrode DE, a voltage supply line VSL, and a first pad electrode PD1 connected to the pad PD.

[0112] The source electrode SE and the drain electrode DE can be set in the display area DA and can be spaced apart from each other.

[0113] The drain electrode DE and the source electrode SE can pass through the second insulating layer 117 and be connected to the semiconductor layer ACT.

[0114] According to some example embodiments, the source electrode SE can pass through the first insulating layer 113 and the second insulating layer 117 and can be connected to the light-blocking metal layer BML. If the light-blocking metal layer BML is part of a line transmitting a signal or voltage, the source electrode SE can be connected to and electrically coupled to the light-blocking metal layer BML and can receive the voltage applied to that line. Alternatively, if the light-blocking metal layer BML is a floating pattern rather than a separate line, the voltage applied to the source electrode SE, etc., can be transmitted to the light-blocking metal layer BML.

[0115] Alternatively, unlike Figure 9 In the example shown, the drain electrode DE can pass through the first insulating layer 113 and the second insulating layer 117 and can be connected to the light-blocking metal layer BML. If the light-blocking metal layer BML is not a line that receives a separate signal, the voltage applied to the drain electrode DE, etc., can be transmitted to the light-blocking metal layer BML.

[0116] The semiconductor layer ACT, gate electrode GE, source electrode SE, and drain electrode DE can form a thin-film transistor TL as a switching element. According to some example embodiments, the thin-film transistor TL can be disposed in each of the first emitter region LA1, the second emitter region LA2, and the third emitter region LA3. According to some example embodiments, a portion of the thin-film transistor TL can be disposed in the non-emitter region NLA.

[0117] The voltage supply line VSL can be set in the non-display area NDA. The supply voltage (e.g., a low power supply voltage) applied to the cathode electrode CE can be supplied to the voltage supply line VSL.

[0118] The first pad electrode PD1, which connects to the pad PD, can be set in the pad area of ​​the non-display area NDA (see example). Figure 2 In some example embodiments, the first pad electrode PD1 can pass through the second insulating layer 117 and can be electrically connected to the first gate metal WR1.

[0119] The source electrode SE, drain electrode DE, voltage supply line VSL, and first pad electrode PD1 connecting to the pad PD may include aluminum (Al), copper (Cu), titanium (Ti), etc., and may be composed of multiple layers or a single layer. According to some example embodiments of this disclosure, the source electrode SE, drain electrode DE, voltage supply line VSL, and first pad electrode PD1 connecting to the pad PD may be composed of a Ti / Al / Ti multilayer structure.

[0120] The third insulating layer 130 can be disposed on the second insulating layer 117. The third insulating layer 130 can cover the thin-film transistor TL in the display area DA and can expose a portion of the voltage supply line VSL in the non-display area NDA.

[0121] According to some example embodiments, the third insulating layer 130 may be a planarization layer. According to some example embodiments, the third insulating layer 130 may be made of an organic material. For example, the third insulating layer 130 may include acrylic resin, epoxy resin, imide resin, ester resin, etc. According to some example embodiments, the third insulating layer 130 may include a photosensitive organic material.

[0122] The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can be disposed on the third insulating layer 130 in the display area DA. Furthermore, the second pad electrode PD2, which connects the electrode CNE and the pad PD, can be disposed on the third insulating layer 130 in the non-display area NDA.

[0123] The first anode electrode AE1 may overlap with the first emitter region LA1 and may extend at least partially into the non-emitter region NLA. The second anode electrode AE2 may overlap with the second emitter region LA2 and may extend at least partially into the non-emitter region NLA, and the third anode electrode AE3 may overlap with the third emitter region LA3 and may extend at least partially into the non-emitter region NLA. The first anode electrode AE1 may pass through the third insulating layer 130 and may be connected to the drain electrode DE of the thin-film transistor TL associated with the first anode electrode AE1. The second anode electrode AE2 may pass through the third insulating layer 130 and may be connected to the drain electrode DE of the thin-film transistor TL associated with the second anode electrode AE2. The third anode electrode AE3 may pass through the third insulating layer 130 and may be connected to the drain electrode DE of the thin-film transistor TL associated with the third anode electrode AE3.

[0124] According to some example embodiments, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can be reflective electrodes. In such cases, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can be metal layers comprising metals such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, and Cr. According to some example embodiments, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can further include metal oxide layers stacked on the metal layers. According to some example embodiments, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can have a multilayer structure, for example, a bilayer structure of ITO / Ag, Ag / ITO, ITO / Mg, and ITO / MgF2, or a trilayer structure of ITO / Ag / ITO.

[0125] The connection electrode CNE can be electrically connected to the voltage supply line VSL in the non-display area NDA and can be in direct contact with the voltage supply line VSL.

[0126] The second pad electrode PD2 can be disposed on the first pad electrode PD1 in the non-display area NDA. The second pad electrode PD2 can be in direct contact with and electrically connected to the first pad electrode PD1.

[0127] According to some example embodiments, the connecting electrode CNE and the second pad electrode PD2 can be made of the same material as the first anode electrode AE1, the second anode electrode AE2 and the third anode electrode AE3, and can be formed together with the first anode electrode AE1, the second anode electrode AE2 and the third anode electrode AE3 via the same manufacturing process.

[0128] A pixel defining layer 150 can be disposed on a first anode electrode AE1, a second anode electrode AE2, and a third anode electrode AE3. The pixel defining layer 150 may include openings for exposing the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3, and may define a first emission region LA1, a second emission region LA2, a third emission region LA3, and a non-emission region NLA. That is, the exposed portion of the first anode electrode AE1 not covered by the pixel defining layer 150 can be the first emission region LA1. Similarly, the exposed portion of the second anode electrode AE2 not covered by the pixel defining layer 150 can be the second emission region LA2. The exposed portion of the third anode electrode AE3 not covered by the pixel defining layer 150 can be the third emission region LA3. The pixel defining layer 150 can be disposed in the non-emission region NLA.

[0129] According to some example embodiments, the pixel defining layer 150 may include organic insulating materials such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, and benzocyclobutene (BCB).

[0130] According to some example embodiments, the pixel defining layer 150 may overlap with the color pattern 250 and the light-blocking pattern 260, which will be described later.

[0131] Furthermore, according to some example embodiments, the pixel-defining layer 150 may overlap with the dam pattern 370, which will be described later.

[0132] like Figure 9 and Figure 12 As shown, the emitter layer OL can be disposed on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3.

[0133] According to some example embodiments, the emitter layer OL may have the shape of a continuous film formed over multiple emitter regions LA1, LA2, and LA3 and a non-emitter region NLA. Although the emitter layer OL is shown only in the display region DA in the figures, embodiments according to this disclosure are not limited thereto. According to some example embodiments, a portion of the emitter layer OL may be further disposed in the non-display region NDA. The emitter layer OL will be described in more detail later.

[0134] The cathode electrode CE can be disposed on the emitter layer OL. A portion of the cathode electrode CE can be further disposed in the non-display area NDA, such as... Figure 12 As shown in the diagram. The cathode electrode CE can be electrically connected to and in contact with the connection electrode CNE in the non-display area NDA. The supply voltage applied to the voltage supply line VSL, such as voltage ELVSS, can be transmitted to the cathode electrode CE via the connection electrode CNE. It should be noted that the cathode electrode CE, as... Figure 12 The portion of the first side L1 of the display device 1 adjacent to the non-display area NDA shown in the diagram is in contact with the connecting electrode CNE, but as... Figure 13 The portion of the non-display area NDA adjacent to at least one of the second side L2 to the fourth side L4 (excluding the first side L1) of the display device 1 is not in contact with the connecting electrode CNE.

[0135] For example, in the portion of the non-display area NDA adjacent to at least one of the second sides L2 to the fourth side L4 (excluding the first side L1) of the display device 1, the cathode electrode CE can be as follows: Figure 13 The cathode electrode CE is not connected to the connecting electrode CNE as shown. In the portion of the non-display area NDA adjacent to at least one of the second sides L2 to the fourth side L4 (excluding the first side L1) of the display device 1, the end of the cathode electrode CE may be disposed on the pixel defining layer 150. In the portion of the non-display area NDA adjacent to at least one of the second sides L2 to the fourth side L4 (excluding the first side L1) of the display device 1, the end of the cathode electrode CE may overlap with the pixel defining layer 150 and may be disposed further inward than the end of the pixel defining layer 150 facing the sealing member 50.

[0136] It should be noted that in the portion of the non-display area NDA adjacent to at least one of the second side L2 to the fourth side L4 (excluding the first side L1) of the display device 1, the end of the cathode electrode CE may be disposed on the side surface of the pixel defining layer 150 facing the sealing member 50. In this case, the cathode electrode CE may not be connected to the connecting electrode CNE.

[0137] In a display device 1 in which the display substrate 10 and the color conversion substrate 30 are attached by means of a sealing member 50 according to some example embodiments of the present disclosure, static electricity generated outside the display device 1 can be introduced into the color conversion substrate 30, thereby affecting a plurality of pixel circuits arranged in the display area DA of the display substrate 10.

[0138] For example, static electricity introduced through the color conversion substrate 30 is typically negatively charged. This negatively charged static electricity can reduce the voltage at the source electrode SE of the thin-film transistor TL (e.g., the driving transistor) of the pixel circuit in the display area DA, which is connected to the light-emitting element. If the voltage at the source electrode SE of the thin-film transistor TL (e.g., the driving transistor), which is connected to the light-emitting element, decreases, unexpected leakage current can occur in the driving transistor, which can lead to dark spots on the screen.

[0139] To prevent static electricity introduced through the color conversion substrate 30 from flowing into the display area DA, a guide ring can serve as a path for the introduced static electricity at the portion overlapping with the sealing member 50 or on the outside of the sealing member 50 (e.g., in the area between the sealing member 50 and edges L1 to L4 of the display device 1). This guide ring can be formed using a double-wire (low resistance) arrangement employing the first and second conductive layers of the display substrate 10 described above. Unfortunately, the second conductive layer of the guide ring may be corroded. To prevent corrosion of the second conductive layer of the guide ring, it is contemplated that only the first conductive layer is used to form the guide ring. However, if the guide ring is formed using only the first conductive layer, the resistance from the color conversion substrate 30 to the guide ring may increase due to the second insulating layer 117 and the third insulating layer 130 between the guide ring and the color conversion substrate 30. As a result, the amount of static electricity flowing into the display area DA may even increase.

[0140] Furthermore, when the guide ring used as the path for the introduced static electricity is disposed on the outside of the sealing member 50 (e.g., between the sealing member 50 and the edges L1 to L4 of the display device 1), the area of ​​the non-display area NDA can be increased, and thus the dead zone of the display device 1 can be increased.

[0141] Figure 19 This is a view illustrating the path through which static electricity is introduced from the outside according to some example embodiments of this disclosure.

[0142] refer to Figure 19 For the display device 1 according to some exemplary embodiments of this disclosure, the electrostatic discharge path introduced into the color conversion substrate 30 can be formed between the sealing member 50 and the display area DA. As described above, the electrostatic discharge channel introduced into the color conversion substrate 30 can be disposed in a portion of the non-display area NDA, adjacent to at least one of the second side L2 to the fourth side L4 of the display device 1 (excluding the first side L1), and can be a connection electrode CNE and a voltage supply line VSL electrically isolated from the cathode electrode CE. The electrostatic discharge path can be a heat sink pattern. The heat sink pattern can be electrically isolated from the light-emitting element.

[0143] As a discharge channel for electrostatic discharge (ESD) introduced into the color conversion substrate 30, the area of ​​the non-display area NDA can be reduced by utilizing a connection electrode CNE and a voltage supply line VSL that are provided in a portion of at least one of the second sides L2 to the fourth side L4 (excluding the first side L1) of the display device 1 and are electrically isolated from the cathode electrode CE. As a result, the dead zone of the display device 1 can be reduced.

[0144] Furthermore, by using the connection electrode CNE, which is disposed on the same layer as the anode electrodes AE1 to AE3, as the discharge path, the resistance from the color conversion substrate 30 to the discharge path is reduced compared to a guide ring that only includes the first conductive layer. As a result, it is possible to significantly reduce the amount of static electricity flowing into the display area DA.

[0145] Return to reference Figures 9 to 13 According to some example embodiments, the cathode electrode CE can be semi-transmissive or transmissive. If the cathode electrode CE is semi-transmissive, it can include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, or compounds or mixtures thereof, such as mixtures of Ag and Mg. Furthermore, if the thickness of the cathode electrode CE ranges from tens to hundreds of angstroms, the cathode electrode CE can be semi-transmissive.

[0146] When the cathode electrode CE is transmissive, the cathode electrode CE may include a transparent conductive oxide (TCO). For example, the cathode electrode CE may be made of tungsten oxide (W). x O x It is formed from titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide, magnesium oxide (MgO), etc.

[0147] According to some example embodiments, the cathode electrode CE can completely cover the emitter layer OL. According to some example embodiments, such as... Figure 12 As shown, the end of the cathode electrode CE can be positioned further outward than the end of the emitter layer OL, and the end of the emitter layer OL can be completely covered by the cathode electrode CE.

[0148] The first anode electrode AE1, the emitting layer OL, and the cathode electrode CE can form a first light-emitting diode ED1; the second anode electrode AE2, the emitting layer OL, and the cathode electrode CE can form a second light-emitting diode ED2; and the third anode electrode AE3, the emitting layer OL, and the cathode electrode CE can form a third light-emitting diode ED3. Each of the first light-emitting diode ED1, the second light-emitting diode ED2, and the third light-emitting diode ED3 can emit emitted light LE.

[0149] like Figure 10As shown, the emitted light LE ultimately emitted from the emitting layer OL can be a mixture of light forming the first component LE1 and the second component LE2. Each of the first component LE1 and the second component LE2 of the emitted light LE can have a peak wavelength equal to or greater than 440 nm and less than 480 nm. That is, the emitted light LE can be blue light.

[0150] like Figure 10 As shown, according to some example embodiments, the emitter layer OL can have a structure in which multiple emitter material layers overlap each other, such as a tandem structure. For example, the emitter layer OL may include: a first stack ST1 containing a first emitter material layer EML1; a second stack ST2 disposed on the first stack ST1 and containing a second emitter material layer EML2; a third stack ST3 disposed on the second stack ST2 and containing a third emitter material layer EML3; a first charge generation layer CGL1 disposed between the first stack ST1 and the second stack ST2; and a second charge generation layer CGL2 disposed between the second stack ST2 and the third stack ST3. The first stack ST1, the second stack ST2, and the third stack ST3 may overlap each other.

[0151] The first emission material layer EML1, the second emission material layer EML2, and the third emission material layer EML3 can overlap each other.

[0152] According to some example embodiments, the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can all emit light of a first color, such as blue light. For example, each of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can be a blue emitting material layer and may include organic materials.

[0153] According to some example embodiments, at least one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit first blue light having a first peak wavelength, and at least another of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit second blue light having a second peak wavelength different from the first peak wavelength. For example, one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit first blue light having a first peak wavelength, and the other two of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit second blue light having a second peak wavelength. For example, the emitted light LE ultimately emitted from the emitting layer OL can be a mixture of a first component LE1 and a second component LE2, where the first component LE1 can be first blue light having a first peak wavelength, and the second component LE2 can be second blue light having a second peak wavelength.

[0154] According to some example embodiments, the range of one of the first peak wavelength and the second peak wavelength may be equal to or greater than 440 nm and less than 460 nm, and the range of the other of the first peak wavelength and the second peak wavelength may be equal to or greater than 460 nm and less than 480 nm. However, it should be understood that the ranges of the first peak wavelength and the second peak wavelength are not limited thereto. For example, the ranges of the first peak wavelength and the second peak wavelength may both include 460 nm. According to some example embodiments, one of the first blue light and the second blue light may be deep blue light, while the other of the first blue light and the second blue light may be sky blue light.

[0155] According to some example embodiments, the emitted light LE from the emitting layer OL is blue light and may include both long-wavelength and short-wavelength components. Therefore, ultimately, the emitting layer OL can emit blue light with a broadly distributed emission peak as the emitted light LE. In this way, color visibility at a side viewing angle can be improved compared to alternative light-emitting elements that emit blue light with sharp emission peaks.

[0156] According to some example embodiments, each of the first emitter material layer EML1, the second emitter material layer EML2, and the third emitter material layer EML3 may include a matrix and a dopant. The matrix material is not particularly limited in this document, as long as it is commonly used and may include Alq3 (tris(8-hydroxyquinoline)aluminum), CBP (4,4'-bis(N-carbazolyl)-1,1'-biphenyl), PVK (poly(n-vinylcarbazole)), ADN (9,10-bis(2-naphthyl)anthracene), TCTA (4,4',4”-tris(carbazolyl-9-yl)triphenylamine), TPBi (1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene), TBADN (3-tert-butyl-9,10-bis(2-naphthyl)anthracene), DSA (stilbene aryl aramid), CBDP (4,4'-bis(9-carbazolyl)-2,2”-dimethylbiphenyl), MADN (2-methyl-9,10-bis(2-naphthyl)anthracene), etc.

[0157] Each of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 that emits blue light may include a fluorescent material comprising one of the following groups: spirocyclic-DPVBi, spirocyclic-6P, DSB (stilbene), DSA (stilbeneylene), PFO (polyfluorene) polymer, and PPV (poly(p-phenylenevinyl)) polymer. As another example, each of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 may include a phosphorescent material comprising an organometallic complex such as (4,6-F2ppy)2lripc.

[0158] As described above, at least one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit blue light in a different wavelength band than at least one of them. To emit blue light in different wavelength ranges, the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can comprise the same material and the resonant distance can be adjusted. Alternatively, to emit blue light in different wavelength ranges, at least one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 and / or at least one of them can comprise different materials.

[0159] However, it should be understood that this disclosure is not limited thereto. The blue light emitted by each of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can have a peak wavelength of 440 nm to 480 nm, and can be made of the same material.

[0160] Alternatively, according to some example embodiments, at least one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit first blue light having a first peak wavelength; another of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit second blue light having a second peak wavelength different from the first peak wavelength; and yet another of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit third blue light having a third peak wavelength different from the first and second peak wavelengths. According to some example embodiments, the range of one of the first, second, and third peak wavelengths can be equal to or greater than 440 nm and less than 460 nm. The range of another of the first, second, and third peak wavelengths can be equal to or greater than 460 nm and less than 470 nm. The range of yet another of the first, second, and third peak wavelengths can be equal to or greater than 470 nm and less than 480 nm.

[0161] According to some example embodiments, the emitted light LE from the emitting layer OL is blue light and may include long-wavelength components, medium-wavelength components, and short-wavelength components. Therefore, ultimately, the emitting layer OL can emit blue light with a broadly distributed emission peak as the emitted light LE, and can improve color visibility at side views.

[0162] In display devices according to some example embodiments, compared with light-emitting elements that do not employ a series structure, the luminous efficiency can be relatively increased and the lifespan of the display device can also be relatively improved due to the structure in which multiple light-emitting elements can be stacked on top of each other.

[0163] Alternatively, according to some example embodiments, at least one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit light of a third color, such as blue light, and at least another of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit light of a second color, such as green light. In some other embodiments, the peak wavelength range of the blue light emitted by at least one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can be from 440 nm to 480 nm or from 460 nm to 480 nm. The green light emitted by at least another of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can have a peak wavelength in the range of 510 nm to 550 nm.

[0164] For example, one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can be a green emitting layer that emits green light, while the other two of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can be blue emitting material layers that emit blue light. When the other two of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 are blue emitting material layers, the peak wavelength ranges of the blue light emitted by the two blue emitting material layers can be equal to or different from each other.

[0165] According to some example embodiments, the emitted light LE emitted from the emitting layer OL can be a mixture of a first component LE1 as blue light and a second component LE2 as green light. For example, when the first component LE1 is deep blue light and the second component LE2 is green light, the emitted light LE can be light with a sky blue color. According to some example embodiments, the emitted light LE emitted from the emitting layer OL is a mixture of blue and green light, and includes long-wavelength and short-wavelength components. Therefore, ultimately, the emitting layer OL can emit blue light with a widely distributed emission peak as the emitted light LE, and can improve color visibility at side viewing angles. Furthermore, since the second component LE2 of the emitted light LE is green light, it can supplement the green light component of the light provided from the display device 1 to the outside, and thus can improve the color gamut of the display device 1.

[0166] According to some example embodiments, the green emission material layers in the first emission material layer EML1, the second emission material layer EML2, and the third emission material layer EML3 may include a matrix and a dopant. The matrix material included in the green emitting material layer is not particularly limited in this document, as long as it is commonly used and may include Alq3 (tris(8-hydroxyquinoline)aluminum), CBP (4,4'-bis(N-carbazolyl)-1,1'-biphenyl), PVK (poly(n-vinylcarbazole)), ADN (9,10-bis(2-naphthyl)anthracene), TCTA (4,4',4”-tris(carbazolyl-9-yl)triphenylamine), TPBi (1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene), TBADN (3-tert-butyl-9,10-bis(2-naphthyl)anthracene), DSA (stilbene aryl aramid), CBDP (4,4'-bis(9-carbazolyl)-2,2”-dimethylbiphenyl), MADN (2-methyl-9,10-bis(2-naphthyl)anthracene), etc.

[0167] The dopants included in the green emitting material layer may include fluorescent materials such as Alq3 (tris(8-hydroxyquinoline)aluminum(III)), or phosphorescent materials such as Ir(ppy)3 (fac3(2-phenylpyridine)iridium), Ir(ppy)2 (acac) (bis(2-phenylpyridine)(acetylacetone)iridium(III)), and Ir(mpyp)3 (2-phenyl-4-methylpyridineiridium).

[0168] A first charge generation layer CGL1 can be disposed between a first stack ST1 and a second stack ST2. The first charge generation layer CGL1 can be used to inject charge into each of the emitter material layers. The first charge generation layer CGL1 can control the charge balance between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 may include an n-type charge generation layer CGL11 and a p-type charge generation layer CGL12. The p-type charge generation layer CGL12 can be disposed on the n-type charge generation layer CGL11 and between the n-type charge generation layer CGL11 and the second stack ST2.

[0169] The first charge-generating layer CGL1 can have a junction structure in which the n-type charge-generating layer CGL11 and the p-type charge-generating layer CGL12 are bonded to each other. The n-type charge-generating layer CGL11 is closer to the anode electrodes AE1, AE2, and AE3 than to the cathode electrode CE (see example). Figure 9 The p-type charge generation layer CGL12 is positioned closer to the cathode electrode CE than the n-type charge generation layer CGL11. The n-type charge generation layer CGL11 supplies electrons to the adjacent anode electrodes AE1, AE2, and AE3 (see example). Figure 9The first emitting material layer EML1 is provided, and the p-type charge generation layer CGL12 supplies holes to the second emitting material layer EML2 included in the second stack ST2. By providing the first charge generation layer CGL1 between the first stack ST1 and the second stack ST2, charge is applied to each of the emitting material layers to improve luminous efficiency and reduce the supply voltage.

[0170] The first stack ST1 can be set at the first anode electrode AE1 and the second anode electrode AE2 (see example). Figure 9 ) and the third anode electrode AE3 (see example) Figure 9 It may further include a first hole transport layer HTL1, a first electron blocking layer BIL1 and a first electron transport layer ETL1.

[0171] The first hole transport layer HTL1 can be disposed at the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 (see example). Figure 9 The first hole transport layer HTL1 can facilitate hole transport and may include hole transport materials. Hole transport materials may include, but are not limited to, carbazole derivatives such as N-phenylcarbazole and polyvinylcarbazole, fluorene derivatives, triphenylamine derivatives such as TPD (N,N'-bis(3-methylphenyl)-N,N'-biphenyl-[1,1-biphenyl]-4,4'-diamine) and TCTA (4,4',4”-tris(N-carbazolyl)triphenylamine), NPB (N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine), TAPC (4-4'-cyclohexylenebis[N,N-bis(4-methylphenyl)aniline), etc.

[0172] A first electron blocking layer (BIL1) can be disposed on a first hole transport layer (HTL1) and between the first hole transport layer (HTL1) and a first emitter material layer (EML1). The first electron blocking layer (BIL1) may include a hole transport material and a metal or metal compound to prevent electrons generated in the first emitter material layer (EML1) from flowing into the first hole transport layer (HTL1). According to some example embodiments, the first hole transport layer (HTL1) and the first electron blocking layer (BIL1) may be composed of a single layer in which materials are mixed.

[0173] The first electron transport layer ETL1 can be disposed on the first emission material layer EML1, and can be disposed between the first charge generation layer CGL1 and the first emission material layer EML1. According to some example embodiments, the first electron transport layer ETL1 may include, for example, Alq3 (tris(8-hydroxyquinoline)aluminum), TPBi (1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene), BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-diphenyl-1,10-phenanthroline), TAZ (3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole), N... Electron transport materials include TAZ (4-(1-naphthyl)-3,5-diphenyl-4H-1,2,4-triazole), tBu-PBD (2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq (bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum), Bebq2 (bis(benzoquinoline-10-hydroxy)beryllium), ADN (9,10-bis(2-naphthyl)anthracene), and mixtures thereof. It should be noted that the type of electron transport material is not particularly limited herein. A second stack ST2 can be disposed on the first charge-generating layer CGL1 and may further include a second hole transport layer HTL2, a second electron-blocking layer BIL2, and a second electron transport layer ETL2.

[0174] A second hole transport layer HTL2 may be disposed on the first charge generation layer CGL1. The second hole transport layer HTL2 may be made of the same material as the first hole transport layer HTL1, and may include one or more materials selected from those listed above that are included in the first hole transport layer HTL1. The second hole transport layer HTL2 may consist of a single layer or multiple layers.

[0175] The second electron blocking layer BIL2 can be disposed on the second hole transport layer HTL2 and can be disposed between the second hole transport layer HTL2 and the first emission material layer EML2. The second electron blocking layer BIL2 can be made of the same material and the same structure as the first electron blocking layer BIL1, or can include one or more materials selected from the materials listed above that are included in the first electron blocking layer BIL1.

[0176] The second electron transport layer ETL2 can be disposed on the second emitter material layer EML2, and can be disposed between the second charge generation layer CGL2 and the second emitter material layer EML2. The second electron transport layer ETL2 can be made of the same material and have the same structure as the first electron transport layer ETL1, or can include one or more materials selected from those listed above that are included in the first electron transport layer ETL1. The second electron transport layer ETL2 can be composed of a single layer or multiple layers.

[0177] The second charge generation layer CGL2 can be disposed on the second stack ST2 and can be disposed between the second stack ST2 and the third stack ST3.

[0178] The second charge generation layer CGL2 can have the same structure as the first charge generation layer CGL1 described above. For example, the second charge generation layer CGL2 may include an n-type charge generation layer CGL21 disposed closer to the second stack ST2 and a p-type charge generation layer CGL22 disposed closer to the cathode electrode CE. The p-type charge generation layer CGL22 may be disposed on the n-type charge generation layer CGL21.

[0179] The second charge-generating layer CGL2 can have a junction structure between the n-type charge-generating layer CGL21 and the p-type charge-generating layer CGL22. The first charge-generating layer CGL1 and the second charge-generating layer CGL2 can be made of different materials or can be made of the same material.

[0180] The third stack ST3 can be disposed on the second charge generation layer CGL2 and can further include a third hole transport layer HTL3 and a third electron transport layer ETL3.

[0181] A third hole transport layer HTL3 may be disposed on the second charge generation layer CGL2. The third hole transport layer HTL3 may be made of the same material as the first hole transport layer HTL1, or may include one or more materials selected from those listed above that are included in the first hole transport layer HTL1. The third hole transport layer HTL3 may consist of a single layer or multiple layers. When the third hole transport layer HTL3 consists of multiple layers, these layers may include different materials.

[0182] The third electron transport layer ETL3 can be disposed on the third emitter material layer EML3 and can be disposed between the cathode electrode CE and the third emitter material layer EML3. The third electron transport layer ETL3 can be made of the same material and have the same structure as the first electron transport layer ETL1, or it can include one or more materials selected from those listed above that are included in the first electron transport layer ETL1. The third electron transport layer ETL3 can be composed of a single layer or multiple layers. When the third electron transport layer ETL3 is composed of multiple layers, these layers can include different materials.

[0183] According to some example embodiments, the hole injection layer may be further disposed between the first stack ST1 and the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 (see example...). Figure 9 Between the first emitter layer EML1, the second emitter layer EML2, and the third emitter layer EML3, and / or between the third stack ST3 and the second charge generation layer CGL2. The hole injection layer can facilitate hole injection into the first emitter layer EML1, the second emitter layer EML2, and the third emitter layer EML3. According to some example embodiments, the hole injection layer can be made of at least one, but not limited to, the group consisting of CuPc (copper phthalocyanine), PEDOT (poly(3,4)-ethylenedioxythiophene), PANI (polyaniline), and NPD (N,N-dinaphthyl-N,N'-diphenylbenzidine). According to some example embodiments, the hole injection layer can be disposed between the first stack ST1 and the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 (see, for example...). Figure 9 Between the second stack ST2 and the first charge generation layer CGL1, and between the third stack ST3 and the second charge generation layer CGL2.

[0184] According to some example embodiments, the electron injection layer may be further disposed between the third electron transport layer ETL3 and the cathode electrode CE, between the second charge generation layer CGL2 and the second stack ST2, and / or between the first charge generation layer CGL1 and the first stack ST1. The electron injection layer facilitates electron injection and may be made of, but is not limited to, Alq3 (tris(8-hydroxyquinoline)aluminum), PBD, TAZ, spirocyclic PBD, BAlq, or SAlq. Furthermore, the electron injection layer may be a metal halide compound and may be, but is not limited to, at least one selected from the group consisting of: MgF2, LiF, NaF, KF, RbF, CsF, FrF, LiI, NaI, KI, RbI, CsI, FrI, and CaF2. Additionally, the electron injection layer may include lanthanide materials such as Yb, Sm, and Eu. Alternatively, the electron injection layer may include metal halide materials such as RbI:Yb and KI:Yb, and lanthanide materials. When the electron injection layer comprises both metal halide materials and lanthanide materials, the electron injection layer can be formed by co-deposition of the metal halide materials and lanthanide materials. According to some example embodiments, the electron injection layer can be disposed between the third electron transport layer ETL3 and the cathode electrode CE, between the second charge generation layer CGL2 and the second stack ST2, and between the first charge generation layer CGL1 and the first stack ST1.

[0185] In addition to the structure described above, the structure of the emitter layer OL can be modified. For example, the emitter layer OL can be modified to be similar to... Figure 11 The emission layer OLa shown is different. Figure 10 The structure shown, Figure 11 The emission layer OLa shown may further include a fourth stack ST4 disposed between the third stack ST3 and the second stack ST2, and may further include a third charge generation layer CGL3 disposed between the third stack ST3 and the fourth stack ST4.

[0186] The fourth stack ST4 may include a fourth emitter material layer EML4, and may further include a fourth hole transport layer HTL4, a third electron blocking layer BIL3, and a fourth electron transport layer ETL4.

[0187] The emitting layer OLa includes a first emitting material layer EML1, a second emitting material layer EML2, a third emitting material layer EML3, and a fourth emitting material layer EML4, all of which can emit light of a third color, such as blue light. At least one of the first emitting material layer EML1, the second emitting material layer EML2, the third emitting material layer EML3, and the fourth emitting material layer EML4, and / or at least one of them, can emit blue light in different wavelength ranges.

[0188] Alternatively, at least one of the first emitting material layer EML1, the second emitting material layer EML2, the third emitting material layer EML3, and the fourth emitting material layer EML4 may emit green light, while at least another of them may emit blue light. For example, one of the first emitting material layer EML1, the second emitting material layer EML2, the third emitting material layer EML3, and the fourth emitting material layer EML4 may be a green emitting material layer, while the other three may be blue emitting material layers.

[0189] A fourth hole transport layer HTL4 may be disposed on the second charge generation layer CGL2. The fourth hole transport layer HTL4 may be made of the same material as the first hole transport layer HTL1, or may include one or more materials selected from those listed above that are included in the first hole transport layer HTL1. The fourth hole transport layer HTL4 may be composed of a single layer or multiple layers. When the fourth hole transport layer HTL4 is composed of multiple layers, these layers may include different materials.

[0190] A third electron blocking layer (BIL3) can be disposed on the fourth hole transport layer (HTL4) and between the fourth hole transport layer (HTL4) and the fourth emission material layer (EML4). The third electron blocking layer (BIL3) can be made of the same material and have the same structure as the first electron blocking layer (BIL1), or it can include one or more materials selected from those listed above that are included in the first electron blocking layer (BIL1). According to some example embodiments, the third electron blocking layer (BIL3) can be removed.

[0191] A fourth electron transport layer (ETL4) can be disposed on the fourth emitter material layer (EML4) and can be disposed between the third charge generation layer (CGL3) and the fourth emitter material layer (EML4). The fourth electron transport layer (ETL4) can be made of the same material and have the same structure as the first electron transport layer (ETL1), or it can include one or more materials selected from those listed above that are included in the first electron transport layer (ETL1). The fourth electron transport layer (ETL4) can be composed of a single layer or multiple layers. When the fourth electron transport layer (ETL4) is composed of multiple layers, these layers can include different materials.

[0192] The third charge generation layer CGL3 can have the same structure as the first charge generation layer CGL1 described above. For example, the third charge generation layer CGL3 may include an n-type charge generation layer CGL31 disposed closer to the fourth stack ST4 and a p-type charge generation layer CGL32 disposed closer to the cathode electrode CE. The p-type charge generation layer CGL32 may be disposed on the n-type charge generation layer CGL31.

[0193] According to some example embodiments, an electron injection layer may be further disposed between the fourth stack ST4 and the third charge generation layer CGL3. Furthermore, a hole injection layer may be further disposed between the fourth stack ST4 and the second charge generation layer CGL2.

[0194] According to some example embodiments, Figure 10 The emission layer OL shown in the figure Figure 11 The emitting layer OLa shown may not include a red emitting layer and therefore may not emit light of a first color, such as red light. That is, the emitted light LE may not include an optical component with a peak wavelength in the range of approximately 610 nm to 650 nm, and the emitted light LE may include only an optical component with a peak wavelength in the range of 440 nm to 550 nm.

[0195] The dam component DM can be positioned further outwards than the voltage supply line VSL. In other words, as... Figure 12 As shown, the voltage supply line VSL can be positioned between the dam component DM and the display area DA.

[0196] According to some example embodiments, a portion of the dam component DM may overlap with the voltage supply line VSL.

[0197] According to some example embodiments, the dam component DM may include multiple dams. For example, the dam component DM may include a first dam D1 and a second dam D2.

[0198] The first dam D1 may partially overlap with the voltage supply line VSL and may be spaced apart from the third insulation layer 130, with the voltage supply line VSL inserted between the first dam D1 and the third insulation layer 130. According to some example embodiments, the first dam D1 may include a first lower dam pattern D11 disposed on the second insulation layer 117 and a first upper dam pattern D12 disposed on the first lower dam pattern D11.

[0199] The second dam D2 can be disposed outside the first dam D1 and can be spaced apart from the first dam D1. According to some example embodiments, the second dam D2 may include a second lower dam pattern D21 disposed on the second insulating layer 117 and a second upper dam pattern D22 disposed on the second lower dam pattern D21.

[0200] According to some example embodiments, the first lower dam pattern D11 and the second lower dam pattern D21 may be made of the same material as the third insulating layer 130, and may be formed together with the third insulating layer 130.

[0201] According to some example embodiments, the first upper dam pattern D12 and the second upper dam pattern D22 may be made of the same material as the pixel defining layer 150 and may be formed together with the pixel defining layer 150.

[0202] According to some example embodiments, the height of the first dam D1 may differ from the height of the second dam D2. For example, the height of the second dam D2 may be greater than the height of the first dam D1. That is, the height of the dam included in the dam component DM may gradually increase with distance from the display area DA. Therefore, it may be possible to more effectively prevent the leakage of organic matter during the process of forming the organic layer 173 included by the encapsulation layer 170, as described later.

[0203] like Figure 9 , Figure 12 and Figure 13 As shown, the first capping layer 160 can be disposed on the cathode electrode CE. The first capping layer 160 can be disposed throughout the first emitting region LA1, the second emitting region LA2, the third emitting region LA3, and the non-emitting region NLA, thereby improving viewing angle characteristics and increasing light extraction efficiency.

[0204] The first capping layer 160 may include an inorganic and / or organic material with light-transmitting properties. That is, the first capping layer 160 may be formed as an inorganic layer, or as an organic layer, or as an organic layer containing inorganic particles. For example, the first capping layer 160 may include a triamine derivative, a carbazole biphenyl derivative, an aryldiamine derivative, or a quinoline aluminum complex (Alq3).

[0205] Furthermore, the first capping layer 160 may be made of a mixture of a high-refractive-index material and a low-refractive-index material. Alternatively, the first capping layer 160 may comprise two layers with different refractive indices, for example, a high-refractive-index layer and a low-refractive-index layer.

[0206] According to some example embodiments, the first capping layer 160 can completely cover the cathode electrode CE. According to some example embodiments, such as... Figure 12 and Figure 13 As shown, the end of the first capping layer 160 can be positioned further outward than the end of the cathode electrode CE, and the end of the cathode electrode CE can be completely covered by the first capping layer 160.

[0207] An encapsulation layer 170 may be disposed on the first capping layer 160. The encapsulation layer 170 protects components (e.g., light-emitting diodes ED1, ED2, and ED3) disposed beneath the encapsulation layer 170 from foreign substances such as moisture. The encapsulation layer 170 commonly extends over the first emitting region LA1, the second emitting region LA2, the third emitting region LA3, and the non-emitting region NLA. According to some example embodiments, the encapsulation layer 170 may directly cover the cathode electrode CE. According to some example embodiments, the capping layer covering the cathode electrode CE may be further disposed between the encapsulation layer 170 and the cathode electrode CE, in which case the encapsulation layer 170 may directly cover the capping layer. The encapsulation layer 170 may be a thin-film encapsulation layer.

[0208] According to some example embodiments, the encapsulation layer 170 may include a lower inorganic layer 171, an organic layer 173, and an upper inorganic layer 175 sequentially stacked on the first capping layer 160.

[0209] According to some example embodiments, the lower inorganic layer 171 may cover the first light-emitting diode ED1, the second light-emitting diode ED2, and the third light-emitting diode ED3 in the display area DA. The lower inorganic layer 171 may cover the dam member DM in the non-display area NDA and may extend to the outside of the dam member DM.

[0210] According to some example embodiments, the lower inorganic layer 171 may completely cover the first capping layer 160. According to some example embodiments, such as... Figure 12 and Figure 13 As shown, the end of the lower inorganic layer 171 can be positioned further outward than the end of the first capping layer 160, and the end of the first capping layer 160 can be completely covered by the lower inorganic layer 171.

[0211] Organic layer 173 may be disposed or formed on the lower inorganic layer 171. Organic layer 173 may cover the first light-emitting diode ED1, the second light-emitting diode ED2, and the third light-emitting diode ED3 in the display area DA. According to some example embodiments, a portion of organic layer 173 may be disposed in the non-display area NDA but may not be disposed outside the dam member DM. Although a portion of organic layer 173 is in Figure 12 and Figure 13 The organic layer 173 is disposed further inward than the first dam D1, but this disclosure is not limited thereto. According to some example embodiments, a portion of the organic layer 173 may be accommodated in the space between the first dam D1 and the second dam D2, and the end of the organic layer 173 may be disposed between the first dam D1 and the second dam D2.

[0212] An upper inorganic layer 175 may be disposed on the organic layer 173. The upper inorganic layer 175 may cover the organic layer 173. According to some example embodiments, the upper inorganic layer 175 may be in direct contact with the lower inorganic layer 171 in the non-display area NDA to form an inorganic / inorganic junction. According to some example embodiments, the ends of the upper inorganic layer 175 and the ends of the lower inorganic layer 171 may be substantially aligned with each other.

[0213] Each of the lower inorganic layer 171 and the upper inorganic layer 175 may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), or lithium fluoride.

[0214] According to some example embodiments, each of the lower inorganic layer 171 and the upper inorganic layer 175 may be composed of a single layer, but is not limited thereto. At least one of the lower inorganic layer 171 and the upper inorganic layer 175 may be composed of a structure in which multiple layers made of inorganic materials are stacked (e.g., a multilayer structure).

[0215] According to some example embodiments, the organic layer 173 may be made of acrylic resin, methacrylic resin, polyisoprene, ethylene resin, epoxy resin, polyurethane resin, cellulose resin and dinaphthalene-containing resin.

[0216] It should be noted that the structure of the encapsulation layer 170 is not limited to the example above. The stacking structure of the encapsulation layer 170 can be changed in various ways.

[0217] The following text will combine Figures 1 to 13 refer to Figures 14 to 18 Description of color conversion substrate 30.

[0218] Figure 14 This is a plan view showing the layout of a third color filter and a color pattern in a color conversion substrate of a display device according to some example embodiments of the present disclosure. Figure 15 This is a plan view showing the layout of a light-blocking member in a color conversion substrate of a display device according to some example embodiments of the present disclosure. Figure 16 This is a plan view showing the layout of a first color filter in a color conversion substrate of a display device according to some example embodiments of the present disclosure. Figure 17 This is a plan view showing the layout of a second color filter in a color conversion substrate of a display device according to some example embodiments of the present disclosure. Figure 18 This is a plan view showing the layout of a dam pattern, a first wavelength conversion pattern, a second wavelength conversion pattern, and a light-transmitting pattern in a color conversion substrate of a display device according to some example embodiments of the present disclosure.

[0219] Figure 9 , Figure 12 and Figure 13 The second substrate 310 shown can be made of a light-transmitting material.

[0220] According to some example embodiments, the second substrate 310 may be a glass substrate or a plastic substrate. According to some example embodiments, the second substrate 310 may further include a separate layer disposed on the glass substrate or plastic substrate, such as an insulating layer like an inorganic film.

[0221] According to some example embodiments, multiple light-transmitting regions TA1, TA2 and TA3 and a light-blocking region BA can be defined on the second substrate 310.

[0222] like Figure 9 , Figure 12 and Figure 13 As shown, the third color filter 235 and the color pattern 250 can be disposed on the surface of the second substrate 310 facing the display substrate 10.

[0223] The third color filter 235 can be arranged to overlap with the third emission region LA3 or the third light transmission region TA3.

[0224] The third color filter 235 can selectively transmit light of a third color (e.g., blue light) while blocking or absorbing light of a first color (e.g., red light) and a second color (e.g., green light). According to some example embodiments, the third color filter 235 may be a blue filter and may include a blue colorant such as a blue dye or blue pigment. As used herein, the colorant comprises a dye or pigment.

[0225] The color pattern 250 can be arranged to overlap with the non-emitting area NLA or the light-blocking area BA. Furthermore, the color pattern 250 can be further positioned within the non-display area NDA.

[0226] The color pattern 250 can absorb a portion of the external light introduced into the display device 1 from the outside, thereby reducing reflected light caused by external light. A large amount of external light is reflected, causing color gamut distortion in the display device 1. Conversely, according to some example embodiments of this disclosure, by arranging the color pattern 250 in the non-emitting area NLA and the non-display area NDA, it is possible to suppress color distortion caused by external light.

[0227] According to some example embodiments, color pattern 250 may include a blue colorant such as a blue dye or blue pigment. According to some example embodiments, color pattern 250 may be made of the same material as third color filter 235 and may be formed together with third color filter 235 by a process used to form third color filter 235. When color pattern 250 includes a blue colorant, external light or reflected light passing through color pattern 250 may be blue light. The color sensitivity of the human eye varies depending on the color of light. For example, light in the blue band may be less perceptible to a user than light in the green band and light in the red band. Therefore, because color pattern 250 includes a blue colorant, a user may perceive reflected light with relatively less sensitivity.

[0228] According to some example embodiments, such as Figure 14 As shown, the color pattern 250 can be formed across the light-blocking area BA. Furthermore, according to some example embodiments, such as... Figure 14 As shown, color pattern 250 can be connected to third color filter 235.

[0229] like Figure 9 , Figure 12 and Figure 13 As shown, the light-blocking pattern 260 can be disposed on the surface of the second substrate 310 facing the display substrate 10. The light-blocking pattern 260 can be arranged to overlap with the light-blocking region BA to block light transmission. According to some example embodiments, the light-blocking pattern 260 can be as follows: Figure 15 The arrangement shown is substantially in a grid pattern when viewed from above (e.g., when viewed from a direction orthogonal to or perpendicular to the display surface of display device 1).

[0230] According to some example embodiments, the light-blocking pattern 260 may include an organic light-blocking material and may be formed by a process of coating and exposing the organic light-blocking material.

[0231] As previously mentioned, external light can cause color gamut distortion in the display device 1. Conversely, according to some exemplary embodiments of this disclosure, by arranging a light-blocking pattern 260 on the second substrate 310, at least a portion of the external light is absorbed by the light-blocking pattern 260. This reduces color distortion caused by reflection of external light. According to some exemplary embodiments, the light-blocking pattern 260 can prevent or reduce color mixing that may occur when light is introduced into adjacent light-transmitting areas, thereby further improving the color gamut.

[0232] According to some example embodiments, the light-blocking pattern 260 can be disposed on the color pattern 250. In other words, the light-blocking pattern 260 can be disposed on the opposite side of the second substrate 310 and the color pattern 250 is inserted between the light-blocking pattern 260 and the second substrate 310.

[0233] Since the color pattern 250 is disposed between the light-blocking pattern 260 and the second substrate 310, according to some example embodiments, the light-blocking pattern 260 may not be in contact with the second substrate 310.

[0234] According to some example embodiments, the light-blocking pattern 260 can be removed.

[0235] like Figure 9 As shown, the first color filter 231 and the second color filter 233 can be disposed on the surface of the second substrate 310 facing the display substrate 10.

[0236] The first color filter 231 can be arranged to overlap with the first emission region LA1 or the first light transmission region TA1, and the second color filter 233 can be arranged to overlap with the second emission region LA2 or the second light transmission region TA2.

[0237] According to some example embodiments, the first color filter 231 can block or absorb light of a third color (e.g., blue light). That is, the first color filter 231 can be used as a blue light filter to block blue light. According to some example embodiments, the first color filter 231 can selectively transmit light of a first color (e.g., red light) while blocking or absorbing light of a third color (e.g., blue light) and light of a second color (e.g., green light). For example, the first color filter 231 can be a red color filter and can include a red colorant.

[0238] The second color filter 233 can block or absorb light of a third color (e.g., blue light). That is, the second color filter 233 can also be used as a blue light filter. According to some example embodiments, the second color filter 233 can selectively transmit light of a second color (e.g., green light) while blocking or absorbing light of a third color (e.g., blue light) and light of a first color (e.g., red light). For example, the second color filter 233 can be a green color filter and can include a green colorant.

[0239] like Figure 9 and Figure 16 As shown, according to some example embodiments, a portion of the first color filter 231 may be further disposed within the light-blocking region BA, and as... Figure 9 and Figure 17 As shown, a portion of the second color filter 233 can also be disposed within the light-blocking area BA.

[0240] According to some example embodiments, a portion of the first color filter 231 may be further disposed in the portion of the light-blocking region BA between the first light-transmitting region TA1 and the second light-transmitting region TA2, and in the portion between the first light-transmitting region TA1 and the third light-transmitting region TA3.

[0241] According to some example embodiments, a portion of the second color filter 233 may be further disposed in the portion of the light-blocking region BA between the first light-transmitting region TA1 and the second light-transmitting region TA2, and in the portion between the second light-transmitting region TA2 and the third light-transmitting region TA3.

[0242] Although the first color filter 231 and the second color filter 233 do not overlap each other in the figures, they can overlap each other in the light-blocking region BA between the first light-transmitting region TA1 and the second light-transmitting region TA2. The portions of the first color filter 231 and the second color filter 233 that overlap in the light-blocking region BA can serve as light-blocking components to block light transmission.

[0243] Alternatively, according to some example embodiments, the first color filter 231 and the second color filter 233 may be disposed throughout the entire light-blocking area BA, and the first color filter 231 and the second color filter 233 may overlap each other in the entire light-blocking area BA.

[0244] According to some example embodiments, the first color filter 231 and the second color filter 233 may overlap with the color pattern 250 in the light-blocking region BA. For example, the color pattern 250 may overlap with the first color filter 231 and the second color filter 233 in a portion of the light-blocking region BA between the first light-transmitting region TA1 and the second light-transmitting region TA2. Furthermore, the color pattern 250 may overlap with the second color filter 233 in the light-blocking region BA between the second light-transmitting region TA2 and the third light-transmitting region TA3. Additionally, the color pattern 250 may overlap with the first color filter 231 in the light-blocking region BA between the third light-transmitting region TA3 and the first light-transmitting region TA1.

[0245] The portions of the first color filter 231 and color pattern 250 that overlap with each other in the light-blocking area BA, as well as the portions of the second color filter 233 and color pattern 250 that overlap with each other in the light-blocking area BA, can serve as light-blocking members. These portions of the first color filter 231 and color pattern 250 that overlap with each other in the light-blocking area BA, as well as the portions of the second color filter 233 and color pattern 250 that overlap with each other in the light-blocking area BA, can absorb at least a portion of external light to reduce color distortion caused by reflection of external light. Furthermore, it is possible to prevent or reduce the intrusion of emitted light into adjacent emission areas, thus preventing color mixing and further improving the color gamut of the display device 1.

[0246] According to some example embodiments, at least one of the first color filter 231 and the second color filter 233 may be further disposed in the non-display area NDA. For example, as Figure 12 and Figure 13As shown, the first color filter 231 can be further disposed in the non-display area NDA and can overlap with the color pattern 250 in the non-display area NDA. The overlapping color pattern 250 and the first color filter 231 can serve as a light-blocking member in the non-display area NDA. When the light-blocking member 260 is removed, the first color filter 231 can be directly disposed on the color pattern 250 in the non-display area NDA.

[0247] like Figure 9 , Figure 12 and Figure 13 As shown, a second capping layer 391 covering the light-blocking pattern 260, the color pattern 250, the first color filter 231, the second color filter 233, and the third color filter 235 can be disposed on a surface of the second substrate 310. According to some example embodiments, the second capping layer 391 can be in direct contact with the first color filter 231, the second color filter 233, and the third color filter 235. Furthermore, according to some example embodiments, the second capping layer 391 can be in direct contact with the light-blocking pattern 260.

[0248] The second capping layer 391 can prevent or reduce damage or contamination of the light-blocking pattern 260, color pattern 250, first color filter 231, second color filter 233, and third color filter 235 by externally introduced impurities such as moisture and air. Furthermore, the second capping layer 391 can prevent or reduce the diffusion of colorants contained in the first color filter 231, second color filter 233, and third color filter 235 into other elements such as the first wavelength conversion pattern 340, second wavelength conversion pattern 350, etc. According to some example embodiments, the second capping layer 391 can be made of inorganic materials. For example, the second capping layer 391 can be made of materials including silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, etc.

[0249] According to some example embodiments, the second capping layer 391 may cover the side surfaces of the color pattern 250, the light-blocking pattern 260, and the first color filter 231 in the non-display area NDA. Furthermore, according to some example embodiments, the second capping layer 391 may be in direct contact with the second substrate 310 in the non-display area NDA.

[0250] The dam pattern 370 can be disposed on the surface of the second cover layer 391 facing the display substrate 10. According to some example embodiments, the dam pattern 370 can be directly disposed on the surface of the second cover layer 391 and can be in direct contact with the second cover layer 391.

[0251] According to some example embodiments, the dam pattern 370 may be arranged to overlap with the non-emitting region NLA or the light-blocking region BA. According to some example embodiments, the dam pattern 370 may be as follows: Figure 18 The diagram shows the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 when viewed from above. The dam pattern 370 can define the space forming each of the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330.

[0252] According to some example embodiments, the dam pattern 370 can be implemented as follows: Figure 18 The diagram shows a single pattern of a single piece, but this disclosure is not limited thereto. According to some example embodiments, the portions of the dam pattern 370 surrounding the first light-transmitting area TA1, the portions of the dam pattern 370 surrounding the second light-transmitting area TA2, and the portions of the dam pattern 370 surrounding the third light-transmitting area TA3 can be formed as separate patterns spaced apart from each other.

[0253] When the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 are formed by inkjet printing using a nozzle or similar means to eject the ink composition, the dam pattern 370 can serve as a guide to stably position the ejected ink composition at the desired location. In other words, the dam pattern 370 can serve as a partition wall.

[0254] According to some example embodiments, the dam pattern 370 may overlap with the pixel-defining layer 150.

[0255] like Figure 12 and Figure 13 As shown, according to some example embodiments, the dam pattern 370 may be further disposed in the non-display area NDA. The dam pattern 370 may overlap with the color pattern 250 and the first color filter 231 in the non-display area NDA.

[0256] According to some example embodiments, the dam pattern 370 may include a photocurable organic material. Furthermore, according to some example embodiments, the dam pattern 370 may include a photocurable organic material and contain a light-blocking material. When the dam pattern 370 has light-blocking properties, it can prevent or reduce light intrusion into adjacent emission regions in the display area DA. For example, the dam pattern 370 can prevent or reduce the entry of emitted light LE from the second light-emitting diode ED2 into the first wavelength conversion pattern 340 overlapping with the first emission area LA1. Furthermore, the dam pattern 370 can block or suppress external light intrusion into elements disposed beneath the dam pattern 370 in the non-emission area NLA and the non-display area NDA.

[0257] like Figure 9 , Figure 12and Figure 13 As shown, a first wavelength conversion pattern 340, a second wavelength conversion pattern 350, and a light-transmitting pattern 330 can be disposed on the second cover layer 391. According to some example embodiments, the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 can be disposed in the display area DA.

[0258] The light-transmitting pattern 330 may overlap with the third emitting region LA3 or the third light-emitting diode ED3. The light-transmitting pattern 330 may be set in the space defined by the dam pattern 370 in the third light-transmitting region TA3.

[0259] According to some example embodiments, the light-transmitting pattern 330 can be as follows: Figure 18 The light-transmitting pattern shown is formed in an island shape. Although the light-transmitting pattern 330 does not overlap with the light-blocking area BA in the figure, this is merely illustrative. According to some example embodiments, a portion of the light-transmitting pattern 330 may overlap with the light-blocking area BA.

[0260] The light-transmitting pattern 330 can transmit incident light. The emitted light LE provided from the third light-emitting diode ED3 can be blue light as described above. The emitted light LE, as blue light, passes through the light-transmitting pattern 330 and the third color filter 235 and is emitted to the outside of the display device 1. That is, the third light L3 emitted from the third emission region LA3 to the outside of the display device 1 can be blue light.

[0261] According to some example embodiments, the light-transmitting pattern 330 may include a first matrix resin 331 and may further include a first scatterer 333 dispersed in the first matrix resin 331.

[0262] The first matrix resin 331 may be made of a material with high light transmittance. According to some example embodiments, the first matrix resin 331 may be made of an organic material. For example, the first matrix resin 331 may include organic materials such as epoxy resin, acrylic resin, cardo resin, or imide resin.

[0263] The first scatterer 333 may have a refractive index different from that of the first matrix resin 331 and may form an optical interface with the first matrix resin 331. For example, the first scatterer 333 may be light-scattering particles. The material of the first scatterer 333 is not particularly limited, as long as it can scatter at least a portion of the transmitted light. For example, the first scatterer 333 may be metal oxide particles or organic particles. Examples of metal oxides may include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), tin oxide (SnO2), etc. Examples of organic particle materials may include acrylic resin, polyurethane resin, etc. The first scatterer 333 may scatter light in random directions regardless of the incident direction of the light without substantially changing the wavelength of the light transmitted through the light-transmitting pattern 330.

[0264] According to some example embodiments, the light-transmitting pattern 330 may be in direct contact with the second capping layer 391 and the dam pattern 370.

[0265] The first wavelength conversion pattern 340 can be set on the second cover layer 391 and can overlap with the first emission region LA1, the first light-emitting diode ED1, or the first light-transmitting region TA1.

[0266] According to some example embodiments, the first wavelength conversion pattern 340 may be set in the space defined by the dam pattern 370 in the first light-transmitting region TA1.

[0267] According to some example embodiments, the first wavelength conversion pattern 340 can be as follows: Figure 18 The first wavelength conversion pattern 340 is shown in an island-shaped pattern. Although the first wavelength conversion pattern 340 does not overlap with the light-blocking region BA in the figures, this disclosure is not limited thereto. According to some example embodiments, a portion of the first wavelength conversion pattern 340 may overlap with the light-blocking region BA.

[0268] According to some example embodiments, the first wavelength conversion pattern 340 may be in direct contact with the second capping layer 391 and the dam pattern 370.

[0269] The first wavelength conversion pattern 340 can convert or shift the peak wavelength of the incident light to another peak wavelength and emit light. According to some example embodiments, the first wavelength conversion pattern 340 can convert the emitted light LE provided from the first light-emitting diode ED1 into red light with a peak wavelength in the range of 610 to 650 nm.

[0270] According to some example embodiments, the first wavelength conversion pattern 340 may include a second matrix resin 341 and a first wavelength shifter 345 dispersed in the second matrix resin 341, and may further include a second scatterer 343 dispersed in the second matrix resin 341.

[0271] The second matrix resin 341 may be made of a material with high light transmittance. According to some example embodiments, the second matrix resin 341 may be made of an organic material. According to some example embodiments, the second matrix resin 341 may be made of the same material as the first matrix resin 331, or may include at least one of the materials listed above as examples of constituent materials of the first matrix resin 331.

[0272] The first wavelength shifter 345 can convert or shift the peak wavelength of the incident light to another peak wavelength. According to some example embodiments, the first wavelength shifter 345 can convert the emitted light LE, which is a third color of blue light provided from the first light-emitting diode ED1, into red light having a single peak wavelength in the range of 610 nm to 650 nm.

[0273] Examples of the first wavelength shifter 345 may include quantum dots, quantum rods, or phosphors. For example, quantum dots may be particulate matter that emits color as electrons transition from the conduction band to the valence band.

[0274] Quantum dots can be semiconductor nanocrystalline materials. Quantum dots have specific band gaps depending on their composition and size, and can absorb light and emit light with an inherent wavelength. Examples of semiconductor nanocrystalline quantum dots can include group IV compound nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI compound nanocrystals, or combinations thereof.

[0275] Group II-VI compounds may be selected from the following groups: binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; and compounds selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnS. Ternary compounds selected from the group consisting of e, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0276] III-V group compounds may be selected from the following groups: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0277] Group IV-VI compounds can be selected from the following groups: binary compounds selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; ternary compounds selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and quaternary compounds selected from SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. Group IV elements can be selected from the group consisting of Si, Ge, and mixtures thereof. Group IV compounds can be binary compounds selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0278] Binary, ternary, or quaternary compounds can exist in particles at a uniform concentration or in the same particles at partially different concentrations. Furthermore, they can have a core-shell structure with one quantum dot surrounding another. At the interface between the core and shell, the atomic concentration gradient in the shell can decrease towards the center.

[0279] According to some example embodiments, quantum dots can have a core-shell structure comprising a core containing nanocrystals and a shell surrounding the core. The shell of the quantum dot can serve as a protective layer to maintain semiconductor properties by preventing or reducing nuclear chemical degradation, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. At the interface between the core and shell, the atomic concentration gradient in the shell can decrease towards the center. Examples of shells for quantum dots can include oxides of metals or non-metals, semiconductor compounds, combinations thereof, etc.

[0280] Examples of metal or nonmetal oxides may include, but are not limited to, binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and NiO, or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, and CoMn2O4.

[0281] Examples of semiconductor compounds may include, but are not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc.

[0282] The light emitted from the first wavelength shifter 345 can have a full width at half maximum (FWHM) of an emission wavelength spectrum of approximately 45 nm or less, approximately 40 nm or less, or approximately 30 nm or less. In this way, the color purity and color gamut of the colors displayed by the display device 1 can be further improved. Furthermore, the light emitted from the first wavelength shifter 345 can propagate in different directions regardless of the incident direction of the incident light. In this way, the lateral visibility of the first color displayed in the first light-transmitting region TA can be improved.

[0283] A portion of the emitted light LE from the first light-emitting diode ED1 may pass through the first wavelength conversion pattern 340 without being converted to red light by the first wavelength shifter 345. The component of the emitted light LE that is not converted by the first wavelength conversion pattern 340 but is incident on the first color filter 231 can be blocked by the first color filter 231. On the other hand, the red light converted from the emitted light LE by the first wavelength conversion pattern 340 passes through the first color filter 231 and is emitted to the outside. That is, the first light L1 emitted to the outside of the display device 1 through the first light-transmitting area TA1 may be red light.

[0284] The second scatterer 343 may have a refractive index different from that of the second matrix resin 341 and may form an optical interface with the second matrix resin 341. For example, the second scatterer 343 may be a light-scattering particle. The second scatterer 343 is substantially the same as the first scatterer 333 described above, and therefore, redundant descriptions will be omitted.

[0285] The second wavelength conversion pattern 350 can be set in the space defined by the dam pattern 370 in the second light-transmitting region TA2.

[0286] According to some example embodiments, the second wavelength conversion pattern 350 can be as follows: Figure 18 The pattern shown is formed in an island shape. According to some example embodiments, a portion of the second wavelength conversion pattern 350 may overlap with the light-blocking region BA, unlike that shown in the figures.

[0287] According to some example embodiments, the second wavelength conversion pattern 350 may be in direct contact with the second capping layer 391 and the dam pattern 370.

[0288] The second wavelength conversion pattern 350 can convert or shift the peak wavelength of the incident light to another peak wavelength and emit light. According to some example embodiments, the second wavelength conversion pattern 350 can convert the emitted light LE provided from the second light-emitting diode ED2 into green light in the range of approximately 510 nm to 550 nm.

[0289] According to some example embodiments, the second wavelength conversion pattern 350 may include a third matrix resin 351 and a second wavelength shifter 355 dispersed in the third matrix resin 351, and may further include a third scatterer 353 dispersed in the third matrix resin 351.

[0290] The third matrix resin 351 may be made of a material with high light transmittance. According to some example embodiments, the third matrix resin 351 may be made of an organic material. According to some example embodiments, the third matrix resin 351 may be made of the same material as the first matrix resin 331, or may include at least one of the materials listed above as examples of constituent materials of the first matrix resin 331.

[0291] The second wavelength shifter 355 can convert or shift the peak wavelength of the incident light to another peak wavelength. According to some example embodiments, the second wavelength shifter 355 can convert blue light having a peak wavelength in the range of 440 nm to 480 nm into green light having a peak wavelength in the range of 510 nm to 550 nm.

[0292] Examples of the second wavelength shifter 355 may include quantum dots, quantum rods, or phosphors. The second wavelength shifter 355 is substantially the same as the first wavelength shifter 345, and therefore, redundant descriptions will be omitted.

[0293] According to some example embodiments, the first wavelength shifter 345 and the second wavelength shifter 355 may be entirely composed of quantum dots. In this case, the particle size of the quantum dots forming the second wavelength shifter 355 may be smaller than the particle size of the quantum dots forming the first wavelength shifter 345.

[0294] The third scatterer 353 may have a refractive index different from that of the third matrix resin 351 and may form an optical interface with the third matrix resin 351. For example, the third scatterer 353 may be a light-scattering particle. The third scatterer 353 is essentially the same as the second scatterer 343 described above, and therefore, redundant descriptions will be omitted.

[0295] The emitted light LE from the second light-emitting diode ED2 can be supplied to a second wavelength conversion pattern 350. The second wavelength shifter 355 can convert the emitted light LE from the second light-emitting diode ED2 into green light with a peak wavelength in the range of approximately 510 to 550 nm.

[0296] A portion of the blue emitted light LE may not be converted to green light by the second wavelength shifter 355, but may instead pass through the second wavelength conversion pattern 350, which can be blocked by the second color filter 233. On the other hand, the green light converted from the emitted light LE by the second wavelength conversion pattern 350 passes through the second color filter 233 and is emitted to the outside. Therefore, the second light L2 emitted from the second light-transmitting area TA2 to the outside of the display device 1 can be green light.

[0297] The third capping layer 393 can be disposed on the dam pattern 370, the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. The third capping layer 393 can cover the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. According to some example embodiments, the third capping layer 393 can also be disposed in the non-display area NDA. In the non-display area NDA (see, for example...) Figure 1 In this structure, the third capping layer 393 can directly contact the second capping layer 391 and can seal the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. Therefore, it is possible to prevent or reduce the possibility of impurities such as moisture and air penetrating from the outside and damaging or contaminating the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350.

[0298] According to some example embodiments, the third capping layer 393 may cover the outer surface of the dam pattern 370 in the non-display area NDA. Furthermore, the third capping layer 393 may be in direct contact with the second capping layer 391 in the non-display area NDA.

[0299] According to some example embodiments, the third capping layer 393 may be made of an inorganic material. According to some example embodiments, the third capping layer 393 may be made of the same material as the second capping layer 391, or may include at least one of the materials listed above that constitute the second capping layer 391. When both the second capping layer 391 and the third capping layer 393 are made of inorganic materials, in the non-display area NDA, the second capping layer 391 and the third capping layer 393 may be in direct contact with each other to form an inorganic / inorganic junction.

[0300] As described above, in the non-display area NDA, the sealing member 50 can be disposed between the color conversion substrate 30 and the display substrate 10.

[0301] The sealing member 50 may overlap with the encapsulation layer 170. For example, the sealing member 50 may overlap with the lower inorganic layer 171 and the upper inorganic layer 175, but may not overlap with the organic layer 173. According to some example embodiments, the sealing member 50 may be in direct contact with the encapsulation layer 170. For example, the sealing member 50 may be directly disposed on the upper inorganic layer 175 and may be in direct contact with the upper inorganic layer 175.

[0302] According to some example embodiments, the upper inorganic layer 175 and the lower inorganic layer 171 disposed below the sealing member 50 may extend to the outside of the sealing member 50.

[0303] The sealing member 50 may overlap with the color pattern 250, the first color filter 231, and the dam pattern 370 in the non-display area NDA. According to some example embodiments, the sealing member 50 may be in direct contact with the third capping layer 393 covering the dam pattern 370.

[0304] As described above, the filler 70 can be disposed in the space defined by the color conversion substrate 30, the display substrate 10, and the sealing member 50. According to some example embodiments, the filler 70 can be in direct contact with the third capping layer 393 and the upper inorganic layer 175 of the encapsulation layer 170, such as... Figure 9 , Figure 12 and Figure 13 As shown in the image.

[0305] In the display device 1 according to some example embodiments, a discharge path for electrostatic ESD introduced into the color conversion substrate 30 can be formed between the sealing member 50 and the display area DA. As described above, the discharge channel for electrostatic ESD introduced into the color conversion substrate 30 can be provided in a portion of the non-display area NDA, adjacent to at least one of the second side L2 to the fourth side L4 of the display device 1 (excluding the first side L1), and can be a connection electrode CNE and a voltage supply line VSL electrically isolated from the cathode electrode CE.

[0306] As a discharge channel for electrostatic discharge (ESD) introduced into the color conversion substrate 30, the area of ​​the non-display area NDA can be reduced by utilizing the connection electrode CNE and the voltage supply line VSL, which are provided in a portion of at least one of the second side L2 to the fourth side L4 (excluding the first side L1) of the display device 1 and electrically isolated from the cathode electrode CE. As a result, the dead zone of the display device 1 can be reduced.

[0307] Furthermore, compared to a guide ring that only includes a first conductive layer, by utilizing the connection electrode CNE, which is arranged on the same layer as the anode electrodes AE1 to AE3, as the discharge path, the resistance from the color conversion substrate 30 to the discharge path is reduced. As a result, it is possible to significantly reduce the amount of static electricity flowing into the display area DA.

[0308] Hereinafter, a display device according to some exemplary embodiments of the present disclosure will be described. In the following description, the same or similar elements will be indicated by the same or similar reference numerals, and redundant descriptions will be omitted or briefly described.

[0309] Figure 20 This is a cross-sectional view of a display device according to some example embodiments of the present disclosure.

[0310] according to Figure 20 Display device 2 in some example embodiments and Figure 13 The difference between the display device 1 shown is that the display device 2 further includes an electrostatic induction pattern EIP.

[0311] For example, in a display device 2 according to some example embodiments, the display device 2 further includes an electrostatic induction pattern EIP.

[0312] The display device 2 according to some example embodiments may further include an electrostatic induction pattern EIP disposed between the sealing member 50 and the display area DA when viewed from above. The display substrate 10 may further include the electrostatic induction pattern EIP. The electrostatic induction pattern EIP may be a first heat sink pattern.

[0313] The electrostatic induction pattern EIP can be set on the same layer as the voltage supply line VSL.

[0314] The electrostatic induction pattern EIP can overlap with the dam member DM in the thickness direction. For example, the electrostatic induction pattern EIP can partially overlap with the second dam D2 in the thickness direction. When the electrostatic induction pattern EIP partially overlaps with the second dam D2 in the thickness direction, the electrostatic induction pattern EIP can be directly disposed on the upper surface of the second insulating layer 117, and the second lower dam pattern D21 can directly contact the upper and side surfaces of the electrostatic induction pattern EIP closer to the display area DA. Furthermore, the lower inorganic layer 171 and the upper inorganic layer 175 can be arranged to overlap with the remaining portion of the upper surface of the electrostatic induction pattern EIP. The lower inorganic layer 171 can directly contact the remaining upper and side surfaces of the electrostatic induction pattern EIP.

[0315] The electrostatic induction pattern (EIP) can be used as a discharge path for electrostatic discharge introduced into the color conversion substrate 30.

[0316] According to some example embodiments, the electrostatic induction pattern EIP is further arranged between the sealing member 50 and the display area DA when viewed from above, so that the area of ​​the non-display area NDA can be reduced, thereby reducing the dead zone.

[0317] Figure 21 This is a cross-sectional view of a display device according to some example embodiments of the present disclosure.

[0318] according to Figure 21 The color conversion substrate 30 of the display device 3 shown in some example embodiments is... Figure 20 The color conversion substrate 30 of the display device 2 differs in that it further includes an electrostatic induction pattern EIP_1 disposed between the third capping layer 393 and the filler 70.

[0319] For example, the color conversion substrate 30 of the display device 3 according to some example embodiments further includes an electrostatic induction pattern EIP_1 disposed between a third capping layer 393 and a filler 70. The electrostatic induction pattern EIP_1 may be a second heat sink pattern.

[0320] The electrostatic induction pattern EIP_1 can overlap with the electrostatic induction pattern EIP of the display substrate 10 in the thickness direction.

[0321] The static electricity introduced into the color conversion substrate 30 can be guided (or sensed) into the electrostatic induction pattern EIP_1, and the static electricity sensed into the electrostatic induction pattern EIP_1 of the color conversion substrate 30 can be sensed (or guided) into the electrostatic induction pattern EIP of the display substrate 10 that overlaps with it in the thickness direction, so that the static electricity can be discharged to the outside.

[0322] According to some example embodiments, the electrostatic induction pattern EIP_1 is further arranged between the sealing member 50 and the display area DA when viewed from above, so that the area of ​​the non-display area NDA can be reduced, thereby reducing the dead zone.

[0323] While the embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will recognize that various modifications, additions, and substitutions may be made without departing from the scope and spirit of the invention as disclosed in the appended claims.

Claims

1. A display device, comprising: A first substrate, on which the display area and the non-display area are defined; A light-emitting element, on the first substrate and in the display area; The second substrate faces the first substrate and is above the light-emitting element; A color conversion component is disposed on the first substrate, and the color conversion component includes: A color filter, located on the surface of the second substrate facing the first substrate and overlapping the light-emitting element; and A wavelength conversion pattern is applied to the color filter. A sealing member is located in the non-display area, between the first substrate and the second substrate; and Heat sink pattern, in the non-display area, Multiple light-transmitting and light-blocking areas are defined within the color conversion section of the display area. The display device further includes a color pattern disposed in the non-display area and overlapping the light-blocking area, and the color pattern is configured to absorb a portion of external light introduced into the display device from the outside. The color filter overlaps with the color pattern in the non-display area, and When viewed from a plan view, the heat sink pattern is located between the sealing member and the display area.

2. The display device according to claim 1, wherein, The heat sink pattern is electrically isolated from the light-emitting element.

3. The display device according to claim 2, wherein, The light-emitting element includes: The anode electrode is located on the first substrate; Cathode electrode, facing the anode electrode; and An emission layer is located between the anode electrode and the cathode electrode. The heat sink pattern is electrically isolated from the cathode electrode.

4. The display device according to claim 3, further comprising: A first conductive layer is located between the first substrate and the light-emitting element. The heat sink pattern is on the first conductive layer.

5. The display device according to claim 4, wherein, The heat sink pattern includes voltage supply lines, and The voltage supply line is electrically connected to the connection pad in the non-display area.

6. The display device of claim 4, further comprising a first insulating layer and a pixel defining layer, the first insulating layer being located between the first conductive layer and the anode electrode, the pixel defining layer being located on the anode electrode to partially expose the anode electrode. The first insulating layer exposes a portion of the upper surface of the heat sink pattern.

7. The display device according to claim 6, wherein, The end of the cathode electrode is disposed inside the end of the pixel defining layer.

8. The display device according to claim 7, further comprising: Connecting pattern, connected to the heat sink pattern, The connection pattern is on the same layer as the anode electrode and is in direct contact with the heat sink pattern. The connection pattern is isolated from the anode electrode.

9. The display device according to any one of claims 1-3, further comprising: An encapsulation layer is provided above the light-emitting element, wherein the encapsulation layer comprises a lower inorganic layer on the light-emitting element, an organic layer on the lower inorganic layer, and an upper inorganic layer on the organic layer. The sealing member is located on the upper inorganic layer in the non-display area, and The sealing member overlaps with the lower inorganic layer and the upper inorganic layer.

10. The display device according to claim 9, wherein, The sealing component is in direct contact with the upper inorganic layer.

11. The display device according to claim 9, further comprising: The dam component is located on the first base and between the sealing component and the display area. The dam components surround the display area, and The lower inorganic layer and the upper inorganic layer cover the dam components.

12. The display device according to claim 11, wherein, The heat sink pattern includes a first heat sink pattern that overlaps with the dam component in the thickness direction.

13. The display device according to claim 12, wherein, The first heat sink pattern is located between the first substrate and the light-emitting element.

14. The display device according to claim 13, wherein, The heat sink pattern further includes a second heat sink pattern on the surface of the second substrate facing the first substrate, and The second heat sink pattern overlaps with the first heat sink pattern in the thickness direction.

15. The display device according to any one of claims 1-8, further comprising: A first capping layer is located between the color filter and the wavelength conversion pattern; as well as The second capping layer is applied to the wavelength conversion pattern. The first capping layer and the second capping layer are in contact with each other in the non-display area, and The sealing member is in contact with the second sealing layer.

16. The display device according to claim 15, further comprising: An encapsulation layer is applied to the light-emitting element. as well as A filler is disposed between the second capping layer and the encapsulation layer. The filler is in contact with the second capping layer, the encapsulation layer, and the sealing member.

17. A display device, comprising: A first substrate, on which the display area and the non-display area are defined; A light-emitting element, on the first substrate and in the display area; The second substrate faces the first substrate and is above the light-emitting element; The color conversion section is disposed on the first substrate and includes a color filter, the color filter being on the surface of the second substrate facing the first substrate and overlapping with the light-emitting element; A sealing member is located between the first substrate and the second substrate and is disposed in the non-display area; as well as Heat sink pattern, in the non-display area, Multiple light-transmitting and light-blocking areas are defined within the color conversion section of the display area. The display device further includes a color pattern disposed in the non-display area and overlapping the light-blocking area, and the color pattern is configured to absorb a portion of external light introduced into the display device from the outside. The color filter overlaps with the color pattern in the non-display area. The heat sink pattern, when viewed in a plan view, is located between the sealing member and the display area. The heat sink pattern is electrically isolated from the light-emitting element, and The heat sink pattern is configured to induce static electricity.

18. The display device according to claim 17, further comprising: Wavelength conversion pattern on the color filter.

19. The display device according to claim 18, wherein, The light-emitting element includes an anode electrode on the first substrate, a cathode electrode facing the anode electrode, and an emitting layer between the anode electrode and the cathode electrode. The heat sink pattern is electrically isolated from the cathode electrode and includes a voltage supply line. The voltage supply line is electrically connected to the connection pad in the non-display area.

20. The display device according to claim 19, further comprising: Connecting pattern, connected to the heat sink pattern, The connection pattern is on the same layer as the anode electrode and is in direct contact with the heat sink pattern. The connection pattern is isolated from the anode electrode.

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