Photoelectric conversion element, photodetector, photodetection system, electronic device, and mobile object

Abstract

A photoelectric conversion element with higher functions is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light within a first wavelength range and performs photoelectric conversion; a second photoelectric converter that detects light within a second wavelength range to perform photoelectric conversion and obtains distance information of an object; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter and easily transmits light within the second wavelength range rather than light within the first wavelength range. The first photoelectric converter includes a stacked structure and a charge accumulation electrode, in which a first electrode, a first photoelectric conversion layer, and a second electrode are stacked in sequence, and the charge accumulation electrode is disposed to be separated from the first electrode and opposite to the first photoelectric conversion layer via an insulating layer.

Description

Technical Field

[0001] The present invention relates to a photoelectric conversion element that performs photoelectric conversion, and a photodetector, a photodetection system, an electronic device, and a moving object including the photoelectric conversion element. Background Art

[0002] A solid-state imaging device has been proposed that includes a stacked structure of a first photoelectric conversion region that mainly receives and photoelectrically converts visible light and a second photoelectric conversion region that mainly receives and photoelectrically converts infrared light (for example, see Patent Document 1).

[0003] Reference List

[0004] Patent Literature

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2017-208496 Summary of the invention

[0006] Incidentally, in the solid-state image pickup device, functional improvement is desired.

[0007] Therefore, it is desirable to provide a high-performance photoelectric conversion element.

[0008] As an embodiment of the present disclosure, a photoelectric conversion element includes: a semiconductor substrate; a first photoelectric converter, which is arranged on the semiconductor substrate, and the first photoelectric converter detects light in a first wavelength range including a visible light range and performs photoelectric conversion on the light; a second photoelectric converter, which is arranged in the semiconductor substrate at a position overlapping with the first photoelectric converter in the thickness direction of the semiconductor substrate, and the second photoelectric converter detects light in a second wavelength range including an infrared light range and performs photoelectric conversion on the light; and a filter, which is arranged on the side of the first photoelectric converter opposite to the second photoelectric converter and allows light of a predetermined color component included in a predetermined wavelength range to pass through. The first photoelectric converter includes a stacked structure and a charge accumulation electrode. The stacked structure includes a first electrode, a first photoelectric conversion layer, and a second electrode stacked in sequence, and the charge accumulation electrode is arranged to be separated from the first electrode and opposite to the first photoelectric conversion layer via an insulating layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 : is a schematic configuration diagram showing an example of a solid-state image pickup device according to the first embodiment of the present disclosure.

[0010] Figure 2A Is applied to Figure 1 Schematic cross-sectional view of an example of a schematic configuration of an image pickup element of a pixel shown.

[0011] Figure 2B yes Figure 2A A schematic enlarged cross-sectional view of a through-electrode and its surroundings shown.

[0012] Figure 2C yes Figure 2A A schematic enlarged plan view of a through-electrode and its surroundings shown.

[0013] Figure 2D Is applied to Figure 1 Schematic cross-sectional view of an example of a schematic configuration of an image pickup element as a modified example of a pixel shown.

[0014] Figure 3 It is shown Figure 2A FIG. 1 is a circuit diagram of an example of a readout circuit of an iTOF sensor section.

[0015] Figure 4 It is shown Figure 2A A circuit diagram of an example of a readout circuit of an organic photoelectric converter is shown.

[0016] Figure 5 yes Figure 1 Schematic diagram of an example of an arrangement state of a plurality of pixels in a pixel portion shown.

[0017] Figure 6 yes Figure 5 Schematic diagram of a modified example of the arrangement state of multiple pixels shown.

[0018] Figure 7 is a schematic cross-sectional view of an example of an image pickup element according to a second embodiment of the present disclosure.

[0019] Figure 8 yes Figure 7 The diagram is a schematic diagram of an example of an arrangement state of pixels shown.

[0020] Fig. 9 yes Figure 7 Schematic diagram of a first variation of the arrangement state of pixels shown.

[0021] Fig.10 yes Figure 7 Schematic diagram of a second variation of the arrangement of pixels shown.

[0022] Fig.11 yes Figure 7 Schematic diagram of a third variation of the arrangement state of pixels shown.

[0023] Fig.12 is a schematic cross-sectional view of an example of an image pickup element according to a third embodiment of the present disclosure.

[0024] Fig.13 yes Fig.12 The diagram is a schematic diagram of an example of an arrangement state of pixels shown.

[0025] Fig.14 is a schematic cross-sectional view of an example of an image pickup element according to a fourth embodiment of the present disclosure.

[0026] Fig.15 yes Fig.14 The diagram is a schematic diagram of an example of an arrangement state of pixels shown.

[0027] Fig.16 yes Fig.14 Schematic diagram of a modified example of the arrangement state of pixels shown.

[0028] Fig.17 is a schematic cross-sectional view of an example of an image pickup element according to a fifth embodiment of the present disclosure.

[0029] Fig.18 yes Fig.17 The diagram is a schematic diagram of an example of an arrangement state of pixels shown.

[0030] Fig.19 yes Fig.17 Schematic diagram of a first variation of the arrangement state of pixels shown.

[0031] Fig. 20 yes Fig.17 Schematic diagram of a second variation of the arrangement of pixels shown.

[0032] Fig.21A yes Fig.17 FIG. 1 is a first schematic diagram of a third variation of an arrangement state of pixels shown in FIG.

[0033] Fig. 21B yes Fig.17 FIG. 2 is a second schematic diagram of a third variation of an arrangement state of pixels shown.

[0034] Fig. 22 is a schematic cross-sectional view of an example of an image pickup element according to a sixth embodiment of the present disclosure.

[0035] Fig.23 yes Fig. 22 The diagram is a schematic diagram of an example of an arrangement state of pixels shown.

[0036] Fig.24 yes Fig. 22 Schematic diagram of a modified example of the arrangement state of pixels shown.

[0037] Fig.25 is a schematic cross-sectional view of an example of an image pickup element according to a seventh embodiment of the present disclosure.

[0038] Fig.26is a schematic cross-sectional view of an example of an image pickup element according to an eighth embodiment of the present disclosure.

[0039] Fig.27A It is shown Fig.26 Characteristic diagram of the transmittance distribution of the dual bandpass filter in the imaging element shown.

[0040] Fig.27B It is shown Fig.26 Characteristic diagram of the light transmittance distribution of the color filter in the image pickup element shown.

[0041] Fig.27C It is shown Fig.26 Characteristic diagram of the light transmittance distribution of the filter in the imaging element shown.

[0042] Fig.27D It is shown Fig.26 Characteristic diagram showing the wavelength dependency of the sensitivity of the organic photoelectric conversion layer and the wavelength dependency of the sensitivity of the photoelectric conversion region in the imaging element shown.

[0043] Fig.28A It is shown Fig.26 Graph showing the transmittance distribution of a dual bandpass filter in a modified example of the imaging element shown.

[0044] Fig.28B It is shown Fig.26 A characteristic diagram showing the light transmittance distribution of a color filter in a modified example of the imaging element shown.

[0045] Fig.28C It is shown Fig.26 A characteristic diagram showing the light transmittance distribution of the optical filter in the modified example of the imaging element shown.

[0046] Fig.28D It is shown Fig.26 Characteristic diagram showing the wavelength dependency of the sensitivity of the organic photoelectric conversion layer and the wavelength dependency of the sensitivity of the photoelectric conversion region in a modification of the imaging element shown.

[0047] Fig.29 is a schematic cross-sectional view of an example of an image pickup element according to a ninth embodiment of the present disclosure.

[0048] Fig.30 is a schematic cross-sectional view of an example of an image pickup element according to a ninth embodiment of the present disclosure.

[0049] Fig.31 yes Fig.29 and Fig.30 The diagram is a schematic diagram of an example of an arrangement state of pixels shown.

[0050] Fig.32A yes Fig.31FIG. 1 is a first schematic diagram of a modification of the arrangement state of pixels shown.

[0051] Fig.32B yes Fig.31 FIG. 2 is a second schematic diagram of a modification of the arrangement state of pixels shown.

[0052] Fig.33A is a schematic enlarged cross-sectional view of a through electrode and its periphery in an image pickup element according to a tenth embodiment of the present disclosure.

[0053] Fig.33B 1 is a schematic enlarged plan view of a through electrode and its periphery in an image pickup element according to a tenth embodiment of the present disclosure.

[0054] Fig.34A is a schematic enlarged cross-sectional view of another configuration example of details of a through-electrode and its periphery in an image pickup element according to a tenth embodiment of the present disclosure.

[0055] Fig.34B is a schematic enlarged plan view of another configuration example of details of a through-electrode and its periphery in an image pickup element according to a tenth embodiment of the present disclosure.

[0056] Fig.35 is a schematic cross-sectional view of an example of a schematic configuration of an image pickup element as a modification example of the tenth embodiment of the present disclosure.

[0057] Fig.36A is a schematic diagram of an example of the overall configuration of a light detection system according to an eleventh embodiment of the present disclosure.

[0058] Fig.36B yes Fig.36A A schematic diagram of an example of a circuit configuration of a light detection system is shown.

[0059] Fig.37 It is a schematic diagram of an example of the overall configuration of an electronic device.

[0060] Fig.38 is a block diagram showing an example of a schematic configuration of an in-vivo information acquisition system.

[0061] Fig.39 is a diagram showing an example of a schematic configuration of an endoscopic surgery system.

[0062] Fig.40 is a block diagram showing an example of the functional configuration of a camera head and a camera control unit (CCU).

[0063] Fig.41 is a block diagram showing an example of a schematic configuration of a vehicle control system.

[0064] Fig.42It is a diagram for assisting in explaining an example of the installation positions of the vehicle exterior information detection unit and the imaging unit. DETAILED DESCRIPTION

[0065] Some embodiments of the present disclosure are described in detail below in conjunction with the accompanying drawings. Note that the description is given in the following order.

[0066] 1. First Embodiment

[0067] An example of a solid-state imaging device including an organic photoelectric converter that acquires visible light image information and an iTOF sensor portion that receives infrared light to acquire distance information.

[0068] 2. Second Embodiment

[0069] Example of a solid-state imaging device in which four on-chip lenses, four color filters, and four charge accumulation electrodes are provided corresponding to one photoelectric converter

[0070] 3. Third embodiment

[0071] An example of a solid-state imaging device in which sixteen on-chip lenses, sixteen color filters, and sixteen charge accumulation electrodes 25 are provided corresponding to one photoelectric converter

[0072] 4. Fourth embodiment

[0073] Example of a solid-state imaging device in which four charge accumulation electrodes and four photoelectric converters are provided corresponding to one on-chip lens and one color filter

[0074] 5. Fifth embodiment

[0075] Example of a solid-state imaging device in which four charge accumulation electrodes are provided corresponding to one on-chip lens, one color filter, one photoelectric converter

[0076] 6. Sixth embodiment

[0077] Example of a solid-state imaging device in which four on-chip lenses, four color filters, sixteen charge accumulation electrodes are provided corresponding to one photoelectric converter

[0078] 7. Seventh embodiment

[0079] Example of a solid-state imaging device including an iTOF sensor portion having a charge holding portion

[0080] 8. Eighth Embodiment

[0081] Example of a solid-state imaging device, which also includes a dual bandpass filter

[0082] 9. Ninth Embodiment

[0083] An example of a solid-state imaging device that also includes an inner lens or an optical waveguide

[0084] 10. Tenth Embodiment

[0085] Example of a solid-state imaging device including a metal layer shielding a periphery of a through-electrode

[0086] 11. Eleventh Embodiment

[0087] Example of a light detection system comprising a light emitting device and a light detector

[0088] 12. Application examples of electronic devices

[0089] 13. Practical application examples of in vivo information acquisition systems

[0090] 14. Practical application examples of endoscopic surgery systems

[0091] 15. Examples of practical applications in mobile objects

[0092] 16. Other modifications

[0093] <1. First Embodiment>

[0094] [Structure of Solid-State Image Capturing Device 1]

[0095] (Overall construction example)

[0096] Figure 1 It is an example of the overall structure of a solid-state imaging device 1 according to an embodiment of the present disclosure. The solid-state imaging device 1 is, for example, a CMOS (Complementary Metal Oxide Semiconductor) image sensor. The solid-state imaging device 1 captures incident light (image light) from an object through an optical lens system, converts the incident light forming an image on an imaging plane into an electrical signal pixel by pixel, and outputs the electrical signal as a pixel signal. The solid-state imaging device 1 includes, for example, a pixel unit 100 as an imaging area on a semiconductor substrate 11, and a vertical drive circuit 111, a column signal processing circuit 112, a horizontal drive circuit 113, an output circuit 114, a control circuit 115, and an input / output terminal 116 arranged in the peripheral area of ​​the pixel unit 100. The solid-state imaging device 1 is a specific example corresponding to the "photodetector" of the present disclosure.

[0097] The pixel section 100 includes, for example, a plurality of pixels P arranged in a two-dimensional matrix. The pixel section 100 has, for example, a plurality of pixel rows and a plurality of pixel columns, each pixel row including a plurality of pixels P arranged in a horizontal direction (lateral direction of the paper), and each pixel column including a plurality of pixels P arranged in a vertical direction (longitudinal direction of the paper). In the pixel section 100, for example, a pixel drive line Lread (row selection line and reset control line) is wired for each pixel row, and a vertical signal line Lsig is wired for each pixel column. The pixel drive line Lread transmits a drive signal for reading a signal from each pixel P. One end of each of the plurality of pixel drive lines Lread is connected to a corresponding one of the output terminals of the vertical drive circuit 111 corresponding to each pixel row.

[0098] The vertical drive circuit 111 includes a shift register, an address decoder, etc., and is, for example, a pixel drive section that drives each pixel P in the pixel section 100 in units of pixel rows. A signal output from each pixel P in a pixel row selected and scanned by the vertical drive circuit 111 is supplied to a column signal processing circuit 112 through a corresponding one of the vertical signal lines Lsig.

[0099] The column signal processing circuit 112 includes an amplifier, a horizontal selection switch, and the like provided for each vertical signal line Lsig.

[0100] The horizontal driving circuit 113 includes a shift register, an address decoder, etc., and sequentially drives each horizontal selection switch of the column signal processing circuit 112 while scanning the horizontal selection switch. Such selective scanning by the horizontal driving circuit 113 causes the signals of each pixel P transmitted through a plurality of corresponding vertical signal lines Lsig to be sequentially output to the horizontal signal line 121 and transmitted to the outside of the semiconductor substrate 11 through the horizontal signal line 121.

[0101] The output circuit 114 processes the signals sequentially supplied from the column signal processing circuits 112 through the horizontal signal line 121 and outputs the processed signals. The output circuit 114 may perform only buffering, black level adjustment, column variation correction, various digital signal processing, etc., for example.

[0102] The circuit components including the vertical drive circuit 111, the column signal processing circuit 112, the horizontal drive circuit 113, the horizontal signal line 121, and the output circuit 114 may be directly formed on the semiconductor substrate 11, or may be provided in an external control IC. Alternatively, these circuit components may be formed in another substrate connected by a cable or the like.

[0103] The control circuit 115 receives data such as a clock or an instruction on an operation mode given from the outside of the semiconductor substrate 11, and also outputs data such as internal information of the pixel P as an imaging element. The control circuit 115 also includes a timing generator that generates various timing signals, and controls the driving of peripheral circuits such as the vertical drive circuit 111, the column signal processing circuit 112, and the horizontal drive circuit 113 based on the various timing signals generated by the timing generator.

[0104] The input / output terminal 116 exchanges signals with the outside.

[0105] (Example of Cross-Sectional Structure of Pixel P)

[0106] Figure 2A An example of a cross-sectional configuration of one pixel P1 among a plurality of pixels P arranged in a matrix in the pixel section 100 is schematically shown.

[0107] As shown in FIG. 2 , the pixel P1 is, for example, a so-called longitudinal splitting type imaging element, which includes a structure in which a photoelectric converter 10 and an organic photoelectric converter 20 are stacked in the Z-axis direction as the thickness direction. The pixel P1 as an imaging element is a specific example corresponding to the “photoelectric conversion element” of the present disclosure. The pixel P1 also includes an intermediate layer 40 and a multilayer wiring layer 30. The intermediate layer 40 is provided between the photoelectric converter 10 and the organic photoelectric converter 20, and the multilayer wiring layer 30 is provided on the side opposite to the organic photoelectric converter 20 as viewed from the photoelectric converter 10. In addition, for example, as viewed from the organic photoelectric converter 20, a sealing film 51, a color filter 52, a planarization film 53, and an on-chip lens 54 are stacked in sequence along the Z-axis direction from a position close to the organic photoelectric converter 20 on the light incident side opposite to the photoelectric converter 10. Note that both the sealing film 51 and the planarization film 53 can be provided to be shared by a plurality of pixels P.

[0108] (Photoelectric converter 10)

[0109] The photoelectric converter 10 is, for example, an indirect TOF (hereinafter referred to as iTOF) sensor that obtains a distance image (distance information) by time of flight (TOF). The photoelectric converter 10 includes, for example, a semiconductor substrate 11, a photoelectric conversion region 12, a fixed charge layer 13, a pair of gate electrodes 14A and 14B, charge-voltage converters (FD) 15A and 15B as floating diffusion regions, an inter-pixel region light shielding wall 16, and a through electrode 17.

[0110] The semiconductor substrate 11 is, for example, an n-type silicon (Si) substrate having a front surface 11A and a back surface 11B, and includes a p-well in a predetermined region. The front surface 11A is opposite to the multilayer wiring layer 30. The back surface 11B is a surface opposite to the intermediate layer 40. Preferably, a fine concavo-convex structure is formed on the back surface 11B, which is effective for confining infrared light incident on the semiconductor substrate 11 inside the semiconductor substrate 11. Note that a similar fine concavo-convex structure can also be formed on the front surface 11A.

[0111] The photoelectric conversion region 12 is, for example, a photoelectric conversion element including a positive-intrinsic-negative (PIN, Positive Intrinsic Negative) type photodiode (PD), and includes a pn junction formed in a predetermined region of the semiconductor substrate 11. Specifically, the photoelectric conversion region 12 detects and receives light having a wavelength in the infrared light range among light from an object, generates charge corresponding to the amount of received light through photoelectric conversion, and accumulates the charge.

[0112] The fixed charge layer 13 is provided to cover the back side 11B of the semiconductor substrate 11. The fixed charge layer 13 has, for example, negative fixed charges to suppress the generation of dark current caused by the interface state of the back side 11B which is the light receiving surface of the semiconductor substrate 11. A hole accumulation layer is formed near the back side 11B of the semiconductor substrate 11 by the electric field induced by the fixed charge layer 13. The hole accumulation layer suppresses the generation of electrons from the back side 11B. Note that the fixed charge layer 13 also includes a portion extending in the Z-axis direction between the inter-pixel region light shielding wall 16 and the photoelectric conversion region 12. The fixed charge layer 13 is preferably formed using an insulating material. Specific examples of constituent materials of the fixed charge layer 13 include hafnium oxide (HfO x ), aluminum oxide (AlO x )、ZrO x ), tantalum oxide (TaO x ), titanium oxide (TiO x ), lanthanum oxide (LaO x ), praseodymium oxide (PrO x ), cerium oxide (CeO x ), neodymium oxide (NdO x ), promethium oxide (PmO x ), samarium oxide (SmO x ), europium oxide (EuO x ), Gadolinium oxide (GdO x ), terbium oxide (TbO x ), Dysprosium oxide (DyO x ), holmium oxide (HoO x ), thulium oxide (TmO x ), Ytterbium oxide (YbO x ), Lutetium oxide (LuOx ), yttrium oxide (YO x ), Hafnium Nitride (HfN x ), aluminum nitride (AlN x ), Hafnium Oxynitride (HfO x N y ), aluminum oxynitride (AlO x N y )wait.

[0113] For example, a pair of gate electrodes 14A and 14B are included in portions of transfer transistors (TG) 141A and 141B, respectively, and extend in the Z-axis direction from the front surface 11A to the photoelectric conversion region 12. The TG 141A and TG 141B transfer charges accumulated in the photoelectric conversion region 12 to the pair of FDs 15A and 15B, respectively, according to drive signals applied to the gate electrodes 14A and 14B.

[0114] A pair of FDs 15A and 15B are floating diffusion regions, which convert charges transferred from the photoelectric conversion region 12 through the TGs 141A and 141B including the gate electrodes 14A and 14B into electric signals (e.g., voltage signals), and output the electric signals. The FDs 15A and 15B are connected to reset transistors (RST) 143A and 143B, respectively, and are connected to vertical signal lines Lsig (Lsig) through amplifier transistors (AMP) 144A and 144B and selection transistors (SEL) 145A and 145B, respectively. Figure 1 ), as described later Figure 3 as shown in .

[0115] Figure 2B is an enlarged cross-sectional view of the inter-pixel region light shielding wall 16 surrounding the through electrode 17 along the Z axis, and Figure 2C It is an enlarged cross-sectional view of the inter-pixel region light shielding wall 16 surrounding the through electrode 17 along the XY plane. Figure 2B Shows the direction of the arrow when viewed along Figure 2C The inter-pixel region light shielding wall 16 is provided at the boundary portion with other adjacent pixels P in the XY plane. The inter-pixel region light shielding wall 16 includes, for example, a portion extending along the XZ plane and a portion extending along the YZ plane, and is provided to surround the photoelectric conversion region 12 of each pixel P. In addition, the inter-pixel region light shielding wall 16 may be provided to surround the through electrode 17. This makes it possible to suppress the oblique incidence of unwanted light on the photoelectric conversion region 12 of the adjacent pixel P and prevent color mixing.

[0116] The inter-pixel area light shielding wall 16 includes, for example, at least one of a metal element, a metal alloy, a metal nitride, and a metal silicide having a light-shielding property. More specific constituent materials of the inter-pixel area light shielding wall 16 include Al (aluminum), Cu (copper), Co (cobalt), W (tungsten), Ti (titanium), Ta (tantalum), Ni (nickel), Mo (molybdenum), Cr (chromium), Ir (iridium), platinum-iridium, TiN (titanium nitride), tungsten silicon compounds, and the like. Note that the constituent materials of the inter-pixel area light shielding wall 16 are not limited to metal materials, and the inter-pixel area light shielding wall 16 can be formed using graphite. In addition, the inter-pixel area light shielding wall 16 is not limited to a conductive material, and may also include a non-conductive material having a light-shielding property such as an organic material. In addition, for example, a conductive layer such as SiO may be provided between the inter-pixel area light shielding wall 16 and the through-electrode 17. x (silicon oxide), aluminum oxide or other insulating materials. Alternatively, a gap may be provided between the inter-pixel region light shielding wall 16 and the through electrode 17 to insulate the inter-pixel region light shielding wall 16 and the through electrode 17 from each other. Note that in the case where the inter-pixel region light shielding wall 16 includes a non-conductive material, the insulating layer Z1 may not be provided. Furthermore, an insulating layer Z2 may be provided on the outside of the inter-pixel region light shielding wall 16, that is, between the inter-pixel region light shielding wall 16 and the fixed charge layer 13. The insulating layer Z2 includes, for example, SiO x (silicon oxide) and aluminum oxide and other insulating materials. Alternatively, a gap can be set between the inter-pixel area light shielding wall 16 and the fixed charge layer 13 so that the inter-pixel area light shielding wall 16 and the fixed charge layer 13 are insulated from each other. In the case where the inter-pixel area light shielding wall 16 includes a conductive material, the electrical insulation between the inter-pixel area light shielding wall 16 and the semiconductor substrate 11 is ensured by the insulating layer Z2. In addition, in the case where the inter-pixel area light shielding wall 16 is set to surround the through electrode 17 and the inter-pixel area light shielding wall 16 includes a conductive material, the electrical insulation between the inter-pixel area light shielding wall 16 and the through electrode 17 is ensured by the insulating layer Z1.

[0117] For example, the through electrode 17 is a device for electrically connecting the readout electrode 26 of the organic photoelectric converter 20 provided on the back surface 11B side of the semiconductor substrate 11 to the FD 131 and the AMP 133 provided on the front surface 11A of the semiconductor substrate 11 (see later). Figure 4). The through electrode 17 is, for example, a transmission path for transmitting signal charges generated in the organic photoelectric converter 20 and transmitting a voltage for driving the charge accumulation electrode 25. For example, the through electrode 17 may be provided to extend from the readout electrode 26 of the organic photoelectric converter 20 through the semiconductor substrate 11 to the multilayer wiring layer 30 in the Z-axis direction. The through electrode 17 is capable of smoothly transmitting the signal charges generated in the organic photoelectric converter 20 provided on the back surface 11B side of the semiconductor substrate 11 to the front surface 11A side of the semiconductor substrate 11. The fixed charge layer 13 and the insulating layer 41 are provided around the through electrode 17, which electrically insulate the through electrode 17 and the p-well region of the semiconductor substrate 11 from each other.

[0118] In addition to silicon materials doped with impurities such as phosphorus doped amorphous silicon (PDAS), the through electrode 17 can be formed using one or more metal materials such as aluminum (Al), tungsten (W), titanium (Ti), cobalt (Co), platinum (Pt), palladium (Pd), copper (Cu), hafnium (Hf) and tantalum (Ta).

[0119] (Multilayer Wiring Layer 30)

[0120] The multilayer wiring layer 30 includes, for example, a readout circuit having TGs 141A and 141B, RSTs 143A and 143B, AMPs 144A and 144B, SELs 145A and 145B, and the like.

[0121] (Middle layer 40)

[0122] The intermediate layer 40 may include, for example, an insulating layer 41, a filter 42, and an inter-pixel region light shielding film 43 embedded in the insulating layer 41. For example, the insulating layer 41 includes a material such as silicon oxide (SiO x ), Silicon Nitride (SiN x ) and silicon oxynitride (SiON) and other inorganic insulating materials, or a laminated film having two or more of them. In addition, organic insulating materials such as polymethyl methacrylate (PMMA), polyvinyl phenol (PVP), polyvinyl alcohol (PVA), polyimide, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, N-2 (aminoethyl) 3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS), tetraethoxysilane (TEOS) and octadecyltrichlorosilane (OTS) can be used as the material included in the insulating layer 41.

[0123] The optical filter 42 has a transmission band in the infrared light range (e.g., wavelengths of 880 nm to 1040 nm, both inclusive) that undergoes photoelectric conversion in the photoelectric conversion region 12. That is, light with a wavelength in the infrared light range passes through the optical filter 42 more easily than light with a wavelength in the visible light range (e.g., wavelengths of 400 nm to 700 nm, both inclusive). Specifically, for example, the optical filter 42 may be formed using an organic material, and the optical filter 42 absorbs at least a portion of light with a wavelength in the visible light range while selectively allowing light in the infrared light range to pass therethrough.

[0124] The inter-pixel region light shielding film 43 is provided in the boundary portion with other adjacent pixels P in the XY plane. The inter-pixel region light shielding film 43 includes a portion extending along the XY plane and is provided to surround the photoelectric conversion region 12 of each pixel P. Like the inter-pixel region light shielding wall 16, the inter-pixel region light shielding film 43 suppresses unwanted light from obliquely incident on the photoelectric conversion region 12 of the adjacent pixel P and prevents color mixing. It should be noted that the inter-pixel region light shielding film 43 may also be provided as required, and therefore, the pixel P1 may not include the inter-pixel region light shielding film 43.

[0125] (Organic Photoelectric Converter 20)

[0126] For example, the organic photoelectric converter 20 includes a readout electrode 26, a semiconductor layer 21, an organic photoelectric conversion layer 22, and an upper electrode 23 stacked in order from a position close to the photoelectric converter 10. The organic photoelectric converter 20 also includes an insulating layer 24 provided below the semiconductor layer 21, and a charge accumulation electrode 25 provided opposite to the semiconductor layer 21 via the insulating layer 24. The charge accumulation electrode 25 and the readout electrode 26 are separated from each other and are provided at the same level, for example. The readout electrode 26 is in contact with the upper end of the through electrode 17. Note that the upper electrode 23, the organic photoelectric conversion layer 22, and the semiconductor layer 21 may each be provided for a plurality of pixels P ( Figure 2A ) may be shared by some pixels P in the pixel section 100, or each may be set to be shared by all the plurality of pixels P in the pixel section 100. The same applies to other embodiments, modified examples, etc. to be described after this embodiment.

[0127] Note that another organic layer may be provided between the organic photoelectric conversion layer 22 and the semiconductor layer 21 and between the organic photoelectric conversion layer 22 and the upper electrode 23 .

[0128] The readout electrode 26, the upper electrode 23, and the charge accumulation electrode 25 each include a conductive film having light transmittance, and include, for example, ITO (indium tin oxide). However, in addition to ITO, tin oxide (SnO x)-based material or a zinc oxide-based material obtained by doping zinc oxide (ZnO) with a dopant can be used as a constituent material of the readout electrode 26, the upper electrode 23, and the charge accumulation electrode 25. Examples of zinc oxide-based materials include aluminum zinc oxide (AZO) doped with aluminum (Al) as a dopant, gallium zinc oxide (GZO) doped with gallium (Ga), and indium zinc oxide (IZO) doped with indium (In). In addition, CuI, InSbO4, ZnMgO, CuInO2, MgIN2O4, CdO, ZnSnO3, TiO2, etc. can be used as constituent materials of the readout electrode 26, the upper electrode 23, and the charge accumulation electrode 25. In addition, spinel oxides and oxides having a YbFe2O4 structure can be used.

[0129] The organic photoelectric conversion layer 22 converts light energy into electrical energy and is formed of two or more organic materials used as p-type semiconductors and n-type semiconductors. The p-type semiconductor is relatively used as an electron donor (donor), and the n-type semiconductor is relatively used as an electron acceptor (acceptor). The organic photoelectric conversion layer 22 has a layered bulk heterojunction structure. The bulk heterojunction structure is a p / n junction surface formed by mixing a p-type semiconductor and an n-type semiconductor, and the excitons generated when absorbing light are decomposed into electrons and holes at the p / n junction surface.

[0130] In addition to the p-type semiconductor and the n-type semiconductor, the organic photoelectric conversion layer 22 may also include three so-called dye materials, which photoelectrically convert light of a predetermined wavelength band while allowing light of another wavelength band to pass through. The p-type semiconductor, the n-type semiconductor and the dye material preferably have different maximum absorption wavelengths from each other. This can absorb wavelengths in the visible light region over a wide range.

[0131] For example, the above-mentioned various organic semiconductor materials are mixed and a spin coating technique is used to form the organic photoelectric conversion layer 22. In addition, the organic photoelectric conversion layer 22 can be formed using, for example, a vacuum deposition method, a printing technique, or the like.

[0132] As the material included in the semiconductor layer 21, it is preferable to use a material having a large band gap value (for example, a band gap value of 3.0 eV or more) and having higher mobility than the material included in the organic photoelectric conversion layer 22. Specific materials thereof may include organic semiconductor materials such as oxide semiconductor materials including IGZO, etc., transition metal dichalcogenides, silicon carbide, diamond, graphene, carbon nanotubes, condensed polycyclic hydrocarbon compounds, and condensed heterocyclic compounds.

[0133] The charge accumulation electrode 25 forms a capacitor together with the insulating layer 24 and the semiconductor layer 21, and accumulates the charge generated in the organic photoelectric conversion layer 22 in a portion of the semiconductor layer 21, for example, a region portion of the semiconductor layer 21 corresponding to the charge accumulation electrode 25 across the insulating layer 24. In the present embodiment, one charge accumulation electrode 25 is provided corresponding to one photoelectric conversion region 12, one color filter 52, and one on-chip lens 54. For example, the charge accumulation electrode 25 is connected to the vertical drive circuit 111.

[0134] As with the insulating layer 41 , the insulating layer 24 can be formed using, for example, an inorganic insulating material and an organic insulating material.

[0135] As described above, the organic photoelectric converter 20 detects some or all wavelengths in the visible light range. In addition, it is desirable that the organic photoelectric converter 20 has no sensitivity to the infrared light range.

[0136] In the organic photoelectric converter 20, light incident from the upper electrode 23 side is absorbed by the organic photoelectric conversion layer 22. The excitons (electron-hole pairs) thus generated move to the interface between the electron donor and the electron acceptor included in the organic photoelectric conversion layer 22, and the excitons are dissociated, that is, the excitons are dissociated into electrons and holes. The charges generated here, that is, electrons and holes, move to the upper electrode 23 or the semiconductor layer 21 by diffusion caused by the carrier concentration difference and the internal electric field caused by the potential difference between the upper electrode 23 and the charge accumulation electrode 25, and are detected as photocurrent. For example, it is assumed that the readout electrode 26 is at a positive potential and the upper electrode 23 is at a negative potential. In this case, the holes generated by photoelectric conversion in the organic photoelectric conversion layer 22 move to the upper electrode 23. The electrons generated by photoelectric conversion in the organic photoelectric conversion layer 22 are attracted to the charge accumulation electrode 25 and accumulated in a portion of the semiconductor layer 21, such as a region portion of the semiconductor layer 21 corresponding to the charge accumulation electrode 25 via the insulating layer 24.

[0137] The charges (e.g., electrons) accumulated in the region portion of the semiconductor layer 21 corresponding to the charge accumulation electrode 25 via the insulating layer 24 are read out as follows. Specifically, a potential V26 is applied to the readout electrode 26, and a potential V25 is applied to the charge accumulation electrode 25. Here, the potential V26 is higher than the potential V25 (V25<V26). By doing so, the electrons accumulated in the region portion of the semiconductor layer 21 corresponding to the charge accumulation electrode 25 are transferred to the readout electrode 26.

[0138] As described above, the semiconductor layer 21 is provided below the organic photoelectric conversion layer 22, and charges (e.g., electrons) are accumulated in the region portion of the semiconductor layer 21 corresponding to the charge accumulation electrode 25 across the insulating layer 24, thereby achieving the following effect. That is, compared with the case where the semiconductor layer 21 is not provided and charges (e.g., electrons) are accumulated in the organic photoelectric conversion layer 22, the recombination of holes and electrons during charge accumulation can be prevented, and the efficiency of transferring the accumulated charges (e.g., electrons) to the readout electrode 26 is increased, and the generation of dark current can be suppressed. The above description is made taking the case of reading out electrons as an example, but holes can be read out. In the case of reading out holes, the above potential is described as a potential sensed by holes.

[0139] (Readout Circuit of Photoelectric Converter 10)

[0140] Figure 3 It is shown Figure 2A 1 is a circuit diagram of an example of a readout circuit of the photoelectric converter 10 included in the pixel P shown.

[0141] The readout circuit of the photoelectric converter 10 includes, for example, TGs 141A and 141B, an OFG 146, FDs 15A and 15B, RSTs 143A and 143B, AMPs 144A and 144B, and SELs 145A and 145B.

[0142] The TGs 141A and 141B are connected between the photoelectric conversion region 12 and the FD 15A and between the photoelectric conversion region 12 and the FD 15B, respectively. A drive signal is applied to the gate electrodes 14A and 14B of the TGs 141A and 141B to turn the TGs 141A and 141B into an activated state, which turns the transfer gates of the TGs 141A and 141B into a conductive state. As a result, the signal charges converted in the photoelectric conversion region 12 are transferred to the FDs 15A and 15B, respectively, through the TGs 141A and 141B.

[0143] The OFG 146 is connected between the photoelectric conversion region 12 and the power supply. A driving signal is applied to the gate electrode of the OFG 146 to turn the OFG 146 into an active state, which turns the OFG 146 into a conductive state. As a result, the signal charge converted in the photoelectric conversion region 12 is discharged to the power supply through the OFG 146.

[0144] FDs 15A and 15B are connected between TG 141A and AMP 144A and between TG 141B and AMP 144B, respectively. FDs 15A and 15B perform charge-voltage conversion on signal charges transferred from TGs 141A and 141B to convert into voltage signals, and output the voltage signals to AMPs 144A and 144B, respectively.

[0145] RST 143A and 143B are connected between FD 15A and power supply and between FD 15B and power supply, respectively. A drive signal is applied to the gate electrodes of RST 143A and 143B to turn RST 143A and 143B into an activated state, which turns the reset gates of RST 143A and 143B into a conductive state. As a result, the potentials of FD 15A and 15B are reset to the power supply level.

[0146] AMPs 144A and 144B include gate electrodes connected to FDs 15A and 15B, respectively, and include drain electrodes connected to a power source. AMPs 144A and 144B are input parts of a readout circuit of a voltage signal held by FDs 15A and 15B, i.e., a so-called source follower circuit. That is, AMPs 144A and 144B have source electrodes connected to a vertical signal line Lsig through SELs 145A and 145B, respectively, thereby configuring a source follower circuit having a constant current source connected to one end of the vertical signal line Lsig.

[0147] The SELs 145A and 145B are connected between the source electrode of the AMP 144A and the vertical signal line Lsig and between the source electrode of the AMP 144B and the vertical signal line Lsig, respectively. A drive signal is applied to each gate electrode of the SELs 145A and 145B to turn the SELs 145A and 145B into an activated state, which turns the SELs 145A and 145B into a conductive state to turn the pixel P into a selected state. Therefore, the readout signals (pixel signals) output from the AMPs 144A and 144B are output to the vertical signal line Lsig through the SELs 145A and 145B, respectively.

[0148] In the solid-state imaging device 1, a light pulse in the infrared range is applied to an object, and the photoelectric conversion region 12 of the photoelectric converter 10 receives the light pulse reflected from the object. In the photoelectric conversion region 12, a plurality of electric charges are generated by the incidence of the light pulse in the infrared range. By alternately supplying a drive signal to a pair of gate electrodes 14A and 14B at equal time intervals, the plurality of electric charges generated in the photoelectric conversion region 12 are alternately distributed to FD 15A and FD 15B. The shutter phase of the drive signal to be applied to the gate electrodes 14A and 14B is changed relative to the light pulse to be applied, which makes the amount of charge accumulated in FD 15A and the amount of charge accumulated in FD 15B become phase modulation values. The round trip time of the light pulse is estimated by demodulating these values, thereby determining the distance between the solid-state imaging device 1 and the object.

[0149] (Readout Circuit of Organic Photoelectric Converter 20)

[0150] Figure 4 It is shown Figure 2A1 is a circuit diagram of an example of a readout circuit of the organic photoelectric converter 20 included in the pixel P1 shown.

[0151] The readout circuit of the organic photoelectric converter 20 includes, for example, an FD 131 , an RST 132 , an AMP 133 , and an SEL 134 .

[0152] The FD 131 is connected between the readout electrode 26 and the AMP 133. The FD 131 performs charge-voltage conversion on the signal charge transferred from the readout electrode 26 to convert into a voltage signal, and outputs the voltage signal to the AMP 133.

[0153] The RST 132 is connected between the FD 131 and the power supply. A driving signal is applied to the gate electrode of the RST 132 to turn the RST 132 into an active state, which turns the reset gate of the RST 132 into a conductive state. As a result, the potential of the FD 131 is reset to the power supply level.

[0154] The AMP 133 includes a gate electrode connected to the FD 131 and a drain electrode connected to a power source. A source electrode of the AMP 133 is connected to the vertical signal line Lsig through the SEL 134 .

[0155] The SEL 134 is connected between the source electrode of the AMP 133 and the vertical signal line Lsig. A drive signal is applied to the gate electrode of the SEL 134 to turn the SEL 134 into an activated state, which turns the SEL 134 into a conductive state to turn the pixel P1 into a selected state. Therefore, the readout signal (pixel signal) output from the AMP 133 is output to the vertical signal line Lsig through the SEL 134.

[0156] (Planar Configuration Example of Pixel P1)

[0157] Figure 5 An example of an arrangement state of a plurality of pixels P1 in the pixel section 100 is schematically shown. Figure 5 (A) to (D) show the Figure 2A The arrangement state at the height positions corresponding to the horizontal levels Lv1 to Lv3 and Lv5 in the Z-axis direction shown. That is, Figure 5 (A) shows the arrangement state of the on-chip lens 54 in the XY plane, Figure 5 (B) shows the arrangement state of the color filter 52 in the XY plane, Figure 5 (C) shows the arrangement state of the charge accumulation electrode 25 and the readout electrode 26 in the XY plane, and Figure 5 (D) shows the arrangement state of the photoelectric conversion region 12 and the through-electrode 17 in the XY plane. Figure 5In (D), the planar shape of the inter-pixel region light shielding film 43 at the height position corresponding to the level Lv4 is shown by a dotted line. Figure 5 As shown in (A) to (D), in the pixel portion 100, an on-chip lens 54, a color filter 52, a charge accumulation electrode 25, and a photoelectric conversion region 12 are arranged at positions corresponding to each other in the Z-axis direction. The positions corresponding to each other here are, for example, positions overlapping with each other in the Z-axis direction. Alternatively, the positions are not limited thereto, and it is sufficient as long as the light incident on an on-chip lens 54 sequentially enters a color filter 52, an organic photoelectric converter 20 shared by multiple pixels P1, and a photoelectric conversion region 12, and the charge generated by photoelectric conversion in the organic photoelectric converter 20 is attracted to a charge accumulation electrode 25 to be accumulated in a portion of the semiconductor layer 21, such as a region portion of the semiconductor layer 21 corresponding to the charge accumulation electrode 25 across the insulating layer 24. In addition, in the case where an on-chip lens 54, a color filter 52, a charge accumulation electrode 25, and a photoelectric conversion region 12 are arranged at positions overlapping with each other in the Z-axis direction, their center positions may or may not coincide with each other. Note that, Figure 5 A planar configuration example of a total of sixteen pixels P1 arranged four by four in the X-axis direction and the Y-axis direction is shown, however, in the pixel section 100 , for example, a plurality of groups of such sixteen pixels P1 are arranged in the X-axis direction and the Y-axis direction.

[0158] exist Figure 5 In the example, as shown in (B), a red pixel PR1 including a red filter 52R and receiving red light, a blue pixel PB1 including a blue filter 52B and receiving blue light, and two green pixels PG1 each including a green filter 52G and receiving green light are included in a pixel group PP1. Figure 5 The arrangement state of the plurality of pixels P shown in (B) is the so-called Bayer arrangement. The red pixels PR1 are arranged alternately in the X-axis direction and the Y-axis direction. The blue pixels PB1 are arranged alternately in the X-axis direction and the Y-axis direction and are located in an oblique direction relative to the red pixels PR1. The green pixel PG1 is arranged to fill the gap between the red pixel PR1 and the blue pixel PB1. Note that Figure 5 This is just an example, and the arrangement state of the plurality of pixels P1 in the pixel unit 100 of the present disclosure is not limited thereto.

[0159] like Figure 5 As shown in (C), one readout electrode 26 is provided for each pixel group PP1. Specifically, one readout electrode 26 is provided in the gap around the middle of the four charge accumulation electrodes 25 in one pixel group PP1. Note that, Figure 5 This is just an example, and the arrangement position of the readout electrode 26 in the pixel unit 100 of the present disclosure is not limited thereto. Figure 5 In the example of FIG. 1 , the readout electrode 26 is disposed in the middle of four pixels P included in one pixel group PP1 , which makes the distances from the respective charge accumulation electrodes 25 of the four pixels P to the readout electrode 26 substantially equal to each other. This applies to adjacent pixels P sharing the readout electrode 26 .

[0160] like Figure 5 As shown in (D), a through electrode 17 is provided for each pixel P. Specifically, a through electrode 17 is provided in the gap around the four corners of the photoelectric conversion region 12 in each pixel P. The through electrode 17 is provided around the corner of the photoelectric conversion region 12 in this way, which makes it possible to further increase the area of ​​the photoelectric conversion region 12. Note that Figure 5 This is just an example, and the arrangement position of the through electrode 17 in the pixel unit 100 of the present disclosure is not limited thereto. Figure 6 As shown, the through-electrodes 17 may also be provided at the midpoints of the four corners in each photoelectric conversion region 12 near the boundaries between adjacent photoelectric conversion regions 12 . Figure 6 Schematically shows Figure 1 FIG. 1 is a modified example of the arrangement state of the plurality of pixels P1 in the pixel section 100 shown in FIG. Figure 5 (D) and Figure 6 As shown in (D), preferably, the through electrode 17 and the readout electrode 26 are arranged at a position near the center of the Z-axis direction that does not overlap with the on-chip lens 54. This can increase the amount of infrared light that can enter the photoelectric conversion region 12, and is conducive to improving the infrared light detection sensitivity in each pixel P1. It should be noted that the present disclosure is not limited to Figure 5 and Figure 6 For example, the through-electrodes 17 may be provided only at the midpoints of the four corners of the photoelectric conversion region 12, without providing the through-electrodes 17 at the four corners of the photoelectric conversion region 12. In addition, in a plane orthogonal to the Z axis, a plurality of through-electrodes 17 are provided as symmetrically as possible with respect to the photoelectric conversion region 12 in each pixel P, thereby improving the optical characteristics of the photoelectric conversion region 12. That is, for example, in the case where the photoelectric conversion region 12 receives oblique incident light, this improves the uniformity of the photoelectric conversion characteristics in the plane orthogonal to the Z axis in the photoelectric conversion region 12.

[0161] like Figure 5 (D) and Figure 6As shown in (D), the inter-pixel area light shielding film 43 is arranged in the boundary portion with other adjacent pixels P1 in the XY plane to form a grid pattern as a whole. The inter-pixel area light shielding film 43 is arranged to surround the photoelectric conversion region 12 of each pixel P1, and includes a plurality of openings 43K. As described above, the inter-pixel area light shielding film 43 suppresses unwanted light from obliquely incident on the photoelectric conversion region 12 of the adjacent pixel P1, and prevents color mixing. Here, the center position of each opening 43K in the inter-pixel area light shielding film 43 can be offset from the center position of the corresponding one of the pixels P1. One reason for doing this is to reduce the change in the detection characteristics of the plurality of pixels P1 arranged in the pixel section 100, for example, to prevent the detection sensitivity of the pixels P1 arranged in the peripheral portion of the pixel section 100 from being reduced. In this case, the offset amount of the center position of each opening 43K relative to the center position of the corresponding one of the pixels P1 can be increased from the center of the pixel section 100 to the peripheral portion of the pixel section 100. In particular, the offset amount can be changed nonlinearly from the center of the pixel section 100 to the peripheral portion of the pixel section 100. This can further improve the shading characteristics at the end of the pixel portion 100 .

[0162] Furthermore, the interval between adjacent pixels P1 may increase from the center of the pixel section 100 to the peripheral portion of the pixel section 100. In particular, preferably, the interval changes nonlinearly from the center of the pixel section 100 to the peripheral portion of the pixel section 100. For example, this can perform pupil correction according to each image height in the plurality of pixels P1 arranged in the pixel section 100.

[0163] [Function and Effect of Solid-State Image Capture Device 1]

[0164] The solid-state imaging device 1 according to the present embodiment includes an organic photoelectric converter 20, a filter 42, and a photoelectric converter 10 stacked in sequence from the incident side. The organic photoelectric converter 20 detects light having a wavelength in the visible light range and performs photoelectric conversion on the light. The filter 42 has a transmission band in the infrared light range. The photoelectric converter 10 detects light having a wavelength in the infrared light range and performs photoelectric conversion on the light. This makes it possible to simultaneously obtain a visible light image and an infrared light image at the same position in the in-plane direction of the XY plane. The visible light image is composed of a red light signal, a green light signal, and a blue light signal obtained from a red pixel PR, a green pixel PG, and a blue pixel PB, respectively, and the infrared light image uses an infrared light signal obtained from all multiple pixels P. Therefore, a high degree of integration can be achieved in the in-plane direction of the XY plane.

[0165] In addition, the photoelectric converter 10 includes a pair of gate electrodes 14A and 14B and FDs 15A and 15B, which makes it possible to obtain an infrared light image as a distance image including information about the distance to the object. Therefore, according to the solid-state imaging device 1 of the present embodiment, a high-resolution visible light image and an infrared light image with depth information can be obtained.

[0166] In the present embodiment, the organic photoelectric converter 20 includes an insulating layer 24 and a charge accumulation electrode 25 in addition to a structure in which the readout electrode 26, the semiconductor layer 21, the organic photoelectric conversion layer 22, and the upper electrode 23 are sequentially stacked. The insulating layer 24 is provided below the semiconductor layer 21, and the charge accumulation electrode 25 is provided to be opposite to the semiconductor layer 21 via the insulating layer 24. This makes it possible to accumulate the charge generated by photoelectric conversion in the organic photoelectric conversion layer 22 in a part of the semiconductor layer 21, for example, a region portion of the semiconductor layer 21 corresponding to the charge accumulation electrode 25 via the insulating layer 24. For example, this can achieve the removal of the charge in the semiconductor layer 21 at the start of exposure, that is, the complete depletion of the semiconductor layer 21. As a result, kTC noise can be reduced, which makes it possible to suppress the degradation of image quality caused by random noise. In addition, compared with the case where the semiconductor layer 21 is not provided and the charge (e.g., electrons) is accumulated in the organic photoelectric conversion layer 22, the recombination of holes and electrons during the charge accumulation can be prevented, and the transfer efficiency of the accumulated charge (e.g., electrons) to the readout electrode 26 is increased, and the generation of dark current can be suppressed.

[0167] Note that in this disclosure, Figure 2D The pixel P1A shown in the figure may not have the semiconductor layer 21. Figure 2D In the pixel P1A shown, the organic photoelectric conversion layer 22 is connected to the readout electrode 26, and the charge accumulation electrode 25 is arranged opposite to the organic photoelectric conversion layer 22 via the insulating layer 24. In the case of such a configuration, the charge generated by the photoelectric conversion in the organic photoelectric conversion layer 22 is accumulated in the organic photoelectric conversion layer 22. Even in this case, when the photoelectric conversion is performed in the organic photoelectric conversion layer 22, a capacitor is formed by the organic photoelectric conversion layer 22, the insulating layer 24, and the charge accumulation electrode 25. For example, this makes it possible to achieve the removal of the charge in the organic photoelectric conversion layer 22, that is, the complete depletion of the organic photoelectric conversion layer 22, at the start of exposure. As a result, kTC noise can be reduced, which makes it possible to suppress the degradation of image quality caused by random noise.

[0168] In addition, in the present embodiment, an on-chip lens 54, a color filter 52, a charge accumulation electrode 25, and a photoelectric conversion region 12 are arranged at positions corresponding to each other in the Z-axis direction of the pixel unit 100. This can obtain an infrared light signal at a position corresponding to each of the red pixel PR1, the green pixel PG1, and the blue pixel PB1. Therefore, compared with the pixel P2 according to the second embodiment described later and the pixel P3 according to the third embodiment described later, in the pixel P1 according to the present embodiment, a high-resolution infrared light image can be obtained.

[0169] Note that in this embodiment, red filter 52R, green filter 52G and blue filter 52B are included and they receive red light, green light and blue light respectively to obtain a color visible light image, however, a monochrome visible light image can be obtained without setting filter 52.

[0170] In addition, in the present embodiment, the through-electrode 17 and the readout electrode 26 are provided at positions not overlapping near the center of the on-chip lens 52 in the Z-axis direction, which can improve the infrared light detection sensitivity in each pixel P1 .

[0171] <2. Second Embodiment>

[0172] [Structure of Pixel P2]

[0173] Figure 7 An example of a cross-sectional configuration in a pixel P2 as an image pickup element according to the second embodiment is schematically shown. Figure 8 The example of the arrangement state of a plurality of pixels P2 in the XY plane is schematically shown. Like the pixel P1 as the image pickup element according to the first embodiment described above, the pixel P2 can be used as Figure 1 The pixel P included in the pixel section 100 in the solid-state imaging device 1 shown in FIG. Figure 8 As shown in FIG. 1 , four pixels P2 are included in one pixel group PP2 and share one photoelectric converter 10. Therefore, when the pixel P2 according to the present embodiment is used as Figure 1 In the case of the pixel P shown, as an example, the driving of the organic photoelectric converter 20 including one charge accumulation electrode 25 can be performed in units of pixels P2, and the driving of one photoelectric converter 10 can be performed in units of pixel groups PP2. Note that Figure 7 2 and 3 show two through electrodes 17 and two readout electrodes 26 in contact with the upper ends of the through electrodes 17, and the readout electrode 26 on the right side is shown as being separated from the semiconductor layer 21. However, in reality, the readout electrode 26 on the right side is in contact with the semiconductor layer 21. Figure 7 The cross section different from the cross section shown is also connected to the semiconductor layer 21 .

[0174] Figure 8 (A) to (D) show the Figure 7 The arrangement state at the height positions corresponding to the horizontal levels Lv1 to Lv3 and Lv5 in the Z-axis direction shown. That is, Figure 8 (A) shows the arrangement state of the on-chip lens 54 in the XY plane, Figure 8 (B) shows the arrangement state of the color filter 52 in the XY plane, Figure 8 (C) shows the arrangement state of the charge accumulation electrode 25 in the XY plane, and Figure 8 (D) shows the arrangement state of the photoelectric conversion region 12, the through electrode 17, and the readout electrode 26 in the XY plane. Figure 8 In order to ensure visibility, the readout electrode 26 is also shown in (D). Figure 8 In (B), symbol PR2 represents a red pixel P2, symbol PG2 represents a green pixel P2, and symbol PB2 represents a blue pixel P2. The color arrangement of the color filter 52 is not particularly limited, and may be, for example, a Bayer array.

[0175] In the above-mentioned first embodiment, in the pixel portion 100, one on-chip lens 54, one color filter 52, one charge accumulation electrode 25, and one photoelectric conversion region 12 are arranged at positions corresponding to each other in the Z-axis direction. In contrast, in the present embodiment, four on-chip lenses 54, four color filters 52, and four charge accumulation electrodes 25 are arranged at positions corresponding to each other in the Z-axis direction, corresponding to one photoelectric conversion region 12. More specifically, corresponding to one photoelectric conversion region 12, the on-chip lens 54, the color filter 52, and the charge accumulation electrode 25 are arranged in two columns in the X-axis direction and in two rows in the Y-axis direction. That is, in the present embodiment, as Figure 7 and Figure 8 As shown, each pixel P2 includes an on-chip lens 54, a color filter 52, and a charge accumulation electrode 25, four pixels P2 adjacent to each other in the X-axis direction and the Y-axis direction are included in one pixel group PP2, and the four pixels P2 share one photoelectric converter 10. Except for this point, the configuration of the pixel P2 is basically the same as that of the pixel P1. Note that Figure 8 (D) shows an example in which the through-electrode 17 and the readout electrode 26 are provided near the boundary between adjacent photoelectric conversion regions 12 at the respective four corners in each photoelectric conversion region 12 .

[0176] [Function and Effect of Pixel P2]

[0177] The pixel P2 according to the present embodiment has the above-mentioned configuration, which can simultaneously obtain a visible light image at the same position in the in-plane direction and an infrared light image including distance information. In addition, according to the pixel P2, compared with the case where a plurality of pixels P1 are included in the pixel unit 100, the difference in infrared light detection sensitivity between the plurality of pixels P2 included in the pixel unit 100 can be reduced. In the case where the pixel unit 100 includes a plurality of pixels P1, the transmittance of infrared light passing through the color filter 52 is different depending on the color of the color filter 52. Therefore, the intensity of infrared light reaching the photoelectric conversion region 12 is different between the red pixel PR1, the blue pixel PB1, and the green pixel PG1. This results in different infrared light detection sensitivities between the plurality of pixels P1 included in one pixel group PP1. In this regard, according to the pixel P2 of the present embodiment, infrared light that has passed through each of a color filter 52R, a color filter 52B, and two color filters 52G enters each photoelectric conversion region 12. This can reduce the difference in infrared light detection sensitivity caused between the plurality of pixel groups PP2.

[0178] In addition, in the present embodiment, the through-electrode 17 and the readout electrode 26 are provided at positions not overlapping near the center of each on-chip lens 54 in the Z-axis direction, which can improve the infrared light detection sensitivity in each pixel P2 .

[0179] In addition, even in the case where a plurality of pixels P2 according to the present embodiment are arranged, the center position of each opening portion 43K in the inter-pixel region light shielding film 43 may be offset from the center position of the corresponding one pixel P2. One of the reasons for this is to reduce the variation in the detection characteristics of the plurality of pixels P2 arranged in the pixel section 100, for example, to prevent the detection sensitivity of the pixels P2 arranged in the peripheral portion of the pixel section 100 from being reduced. In this case, the offset amount of the center position of each opening portion 43K relative to the center position of the corresponding one pixel P2 may increase from the center of the pixel section 100 to the peripheral portion of the pixel section 100. In particular, it is preferred that the offset amount changes nonlinearly from the center of the pixel section 100 to the peripheral portion of the pixel section 100.

[0180] Furthermore, the interval between adjacent pixels P2 may increase from the center of the pixel section 100 to the peripheral portion of the pixel section 100. In particular, preferably, the interval changes nonlinearly from the center of the pixel section 100 to the peripheral portion of the pixel section 100. This makes it possible to perform pupil correction according to each image height in the plurality of pixels P2 arranged in the pixel section 100, for example.

[0181] Notice, Figure 8 This is just an example, and the arrangement state of the through-electrodes 17 and the arrangement state of the readout electrodes 26 in the plurality of pixels P2 arranged in the pixel section 100 of the present disclosure are not limited thereto. Fig. 9As shown, the through-electrodes 17 may be provided at the midpoints of four corners in each photoelectric conversion region 12 near the boundary between adjacent photoelectric conversion regions 12 . Fig. 9 Schematically shows a first variation of the arrangement of a plurality of pixels P2 in the pixel unit 100. Fig.10 As shown, the through electrodes 17 may be provided at four corners in each photoelectric conversion region 12 near the boundaries between adjacent photoelectric conversion regions 12 and at the midpoints of the four corners in each photoelectric conversion region 12 . Fig.10 FIG. 1 schematically shows a second modification of the arrangement state of the plurality of pixels P2 in the pixel section 100. Fig.11 As shown, one on-chip lens 54A having a size corresponding to the two on-chip lenses 54 may be arranged instead of the two on-chip lenses 54 arranged side by side in the X-axis direction. Fig.11 FIG. 1 schematically shows a third modification of the arrangement of the plurality of pixels P2 in the pixel section 100. Fig.11 In the example of , the two color filters 52 disposed directly below the on-chip lens 54A are, for example, green filters 52G that allow green to pass. Therefore, the light passing through the on-chip lens 54A is received by the two pixels PG2, which can obtain image plane phase difference information. Note that the color arrangement of the color filter 52 is not particularly limited, and the color arrangement other than the portion corresponding to the on-chip lens 54A can be, for example, a Bayer array. In addition, Fig.11 In the embodiment, the through-electrode 17 and the readout electrode 26 are provided at the four corners of each photoelectric conversion region 12, however, the present disclosure is not limited thereto. Fig.11 In addition to the configuration in , the through electrodes 17 may also be provided at the midpoints of the four corners in each photoelectric conversion region 12 near the boundary between adjacent photoelectric conversion regions 12. Alternatively, the through electrodes 17 may not be provided at the four corners in each photoelectric conversion region 12, but may be provided only at the midpoints of the four corners in each photoelectric conversion region 12.

[0182] <3. Third embodiment>

[0183] [Structure of pixel P3]

[0184] Fig.12 An example of a cross-sectional configuration of a pixel P3 as an image pickup element according to the third embodiment is schematically shown. Fig.13 1 is a schematic diagram of an example of an arrangement state of a plurality of pixels P3 in the XY plane. Like the pixel P1 as the image pickup element according to the first embodiment described above, the pixel P3 can be used as Figure 1 The pixel P included in the pixel section 100 in the solid-state imaging device 1 shown in FIG. Fig.13As shown, sixteen pixels P3 are included in one pixel group PP3 and share one photoelectric converter 10. Therefore, when using the pixel P3 according to the present embodiment as Figure 1 In the case of the pixel P shown, as an example, driving of the organic photoelectric converter 20 including one charge accumulation electrode 25 may be performed in units of pixels P3, and driving of one photoelectric converter 10 may be performed in units of pixel groups PP3.

[0185] Fig.13 (A) to (D) show the Fig.12 The arrangement state at the height positions corresponding to the horizontal levels Lv1 to Lv3 and Lv5 in the Z-axis direction shown. That is, Fig.13 (A) shows the arrangement state of the on-chip lens 54 in the XY plane, Fig.13 (B) shows the arrangement state of the color filter 52 in the XY plane, Fig.13 (C) shows the arrangement state of the charge accumulation electrode 25 and the readout electrode 26 in the XY plane, Fig.13 (D) shows the arrangement state of the photoelectric conversion region 12 and the through-electrode 17 in the XY plane. Fig.13 In order to ensure visibility, the readout electrode 26 is also shown in (D). Fig.13 (C) shows the charge accumulation electrode 25 and the readout electrode 26 partially overlapping each other, however, in reality, the charge accumulation electrode 25 and the readout electrode 26 are provided to be separated from each other. Fig.13 In (B), symbol PR3 represents a red pixel P3, symbol PG3 represents a green pixel P3, and symbol PB3 represents a blue pixel P3. It should be noted that the color arrangement of the color filter 52 is not particularly limited, and may be, for example, a Bayer array.

[0186] In the above-mentioned first embodiment, in the pixel portion 100, one on-chip lens 54, one color filter 52, one charge accumulation electrode 25, and one photoelectric conversion region 12 are provided at positions corresponding to each other in the Z-axis direction. In contrast, in the present embodiment, sixteen on-chip lenses 54, sixteen color filters 52, and sixteen charge accumulation electrodes 25 are provided at positions corresponding to each other in the Z-axis direction corresponding to one photoelectric conversion region 12. More specifically, the on-chip lenses 54, color filters 52, and charge accumulation electrodes 25 are arranged in four columns in the X-axis direction and in four rows in the Y-axis direction corresponding to one photoelectric conversion region 12. That is, in the present embodiment, as shown in FIG. Fig.12 and Fig.13As shown, sixteen pixels P3 adjacent to each other in the X-axis direction and the Y-axis direction are included in one pixel group PP3 and share one photoelectric converter 10. Except for this point, the configuration of the pixel P3 is substantially the same as that of the pixel P1. Note that Fig.13 (D) shows an example in which the through electrodes 17 are arranged near the boundaries between adjacent photoelectric conversion regions 12 at the four corners of each photoelectric conversion region 12 and on a straight line connecting the four corners. Fig.13 In (D), one readout electrode 26 is provided at the middle position of every four pixels P3 , and these four pixels P3 share one readout electrode 26 .

[0187] [Functions and effects of Pixel P3]

[0188] The pixel P3 according to the present embodiment has the above-mentioned structure, which makes it possible to simultaneously obtain a visible light image and an infrared light image including distance information at the same position in the in-plane direction. In addition, according to the pixel P3, compared with the case where the pixel unit 100 includes a plurality of pixels P1, the difference in infrared light detection sensitivity between the plurality of pixel groups PP3 included in the pixel unit 100 can be reduced.

[0189] In addition, in the present embodiment, the through electrode 17 and the readout electrode 26 are arranged at positions that do not overlap near the center of each on-chip lens 54 in the Z-axis direction, which makes it possible to improve the infrared light detection sensitivity in each pixel P2. Note that Fig.13 This is just an example, and the arrangement positions of the through electrodes 17 and the arrangement positions of the readout electrodes 26 in the plurality of pixels P3 arranged in the pixel section 100 of the present disclosure are not limited thereto.

[0190] In addition, even in the case where a plurality of pixels P3 according to the present embodiment are arranged, the center position of each opening portion 43K of the inter-pixel region light shielding film 43 may be deviated from the center position of the corresponding one pixel P3. One reason for doing this is to reduce the variation in the detection characteristics of the plurality of pixels P3 arranged in the pixel section 100, for example, to prevent the detection sensitivity of the pixels P3 arranged in the peripheral portion of the pixel section 100 from being reduced. In this case, the offset amount of the center position of each opening portion 43K relative to the center position of the corresponding one pixel P3 may increase from the center of the pixel section 100 to the peripheral portion of the pixel section 100. In particular, it is preferred that the offset amount changes nonlinearly from the center of the pixel section 100 to the peripheral portion of the pixel section 100.

[0191] In addition, the spacing between adjacent pixels P3 may increase from the center of the pixel section 100 to the peripheral portion of the pixel section 100. In particular, preferably, the spacing changes nonlinearly from the center of the pixel section 100 to the peripheral portion of the pixel section 100. Doing so, for example, can perform pupil correction according to each image height in the plurality of pixels P2 arranged in the pixel section 100.

[0192] <4. Fourth embodiment>

[0193] [Structure of pixel P4]

[0194] Fig.14 An example of a cross-sectional configuration in a pixel P4 as an image pickup element according to the fourth embodiment is schematically shown. Fig.15 1 is a schematic diagram of an example of an arrangement state of a plurality of pixels P4 in the XY plane. Like the pixel P1 as the image pickup element according to the first embodiment described above, the pixel P4 can be used as Figure 1 The pixel P included in the pixel section 100 in the solid-state imaging device 1 shown in FIG. Fig.14 and Fig.15 As shown, one pixel P4 includes four sub-pixels SP4, and each sub-pixel SP4 includes one charge accumulation electrode 25 and one photoelectric converter 10. Therefore, when using the pixel P4 according to the present embodiment as Figure 1 In the case of the pixel P shown, as an example, driving of the organic photoelectric converter 20 including one charge accumulation electrode 25 may be performed in units of sub-pixels SP4, and driving of one photoelectric converter 10 may be performed in units of sub-pixels SP4.

[0195] Fig.15 (A) to (D) show the Fig.14 The arrangement state at the height positions corresponding to the horizontal levels Lv1 to Lv3 and Lv5 in the Z-axis direction shown. That is, Fig.15 (A) shows the arrangement state of the on-chip lens 54 in the XY plane, Fig.15 (B) shows the arrangement state of the color filter 52 in the XY plane, Fig.15 (C) shows the arrangement state of the charge accumulation electrode 25 in the XY plane, and Fig.15 (D) shows the arrangement state of the photoelectric conversion region 12 and the through-electrode 17 in the XY plane. Fig.15 In order to ensure visibility, the readout electrode 26 is also shown in (D). Fig.15 In (B), symbol PR4 represents a red pixel P4, symbol PG4 represents a green pixel P4, and symbol PB4 represents a blue pixel P4.

[0196] In the above-mentioned first embodiment, in the pixel portion 100, one on-chip lens 54, one color filter 52, one charge accumulation electrode 25, and one photoelectric conversion region 12 are arranged at positions corresponding to each other in the Z-axis direction. In contrast, in the present embodiment, one color filter 52, four charge accumulation electrodes 25, and four photoelectric conversion regions 12 are arranged at positions corresponding to each other in the Z-axis direction, corresponding to one on-chip lens 54. More specifically, corresponding to one on-chip lens 54 and one color filter 52, the charge accumulation electrode 25 and the photoelectric conversion region 12 are arranged in two columns in the X-axis direction and in two rows in the Y-axis direction. That is, in the present embodiment, as Fig.15 and Fig.16 As shown, one pixel P4 includes four charge accumulation electrodes 25 and four photoelectric conversion regions 12. Except for this point, the configuration of the pixel P4 is substantially the same as that of the pixel P1.

[0197] [Pixel P4 functions and effects]

[0198] The pixel P4 according to the present embodiment has the above-mentioned structure, which makes it possible to simultaneously obtain a visible light image at the same position in the in-plane direction and an infrared light image including distance information. In addition, image plane phase difference information in the X-axis direction and the Y-axis direction can be obtained in each pixel P4 by infrared light.

[0199] In addition, an infrared light signal can be obtained at a position corresponding to each of the red pixel PR4, the green pixel PG4, and the blue pixel PB4. Therefore, compared with the pixel P2 according to the second embodiment and the pixel P3 according to the third embodiment, in the pixel P4 according to the present embodiment, an infrared light image with high resolution is obtained.

[0200] In addition, in the present embodiment, the through-electrode 17 and the readout electrode 26 are provided at positions not overlapping near the center of the on-chip lens 54 in the Z-axis direction, which makes it possible to improve the infrared light detection sensitivity in each pixel P4 .

[0201] In addition, even in the case where a plurality of pixels P4 according to the present embodiment are arranged, the center position of each opening portion 43K of the inter-pixel region light shielding film 43 may be offset from the center position of a corresponding one sub-pixel SP4. One of the reasons for doing this is to reduce the variation in the detection characteristics of the plurality of pixels P4 arranged in the pixel section 100, for example, to prevent the detection sensitivity of the pixels P4 arranged in the peripheral portion of the pixel section 100 from being reduced. In this case, the offset amount of the center position of each opening portion 43K relative to the center position of the corresponding one sub-pixel SP4 may increase from the center of the pixel section 100 to the peripheral portion of the pixel section 100. In particular, it is preferred that the offset amount changes nonlinearly from the center of the pixel section 100 to the peripheral portion of the pixel section 100.

[0202] Furthermore, the interval between adjacent pixels P4 may increase from the center of the pixel section 100 to the peripheral portion of the pixel section 100. In particular, preferably, the interval changes nonlinearly from the center of the pixel section 100 to the peripheral portion of the pixel section 100. This makes it possible to perform pupil correction according to each image height in the plurality of pixels P4 arranged in the pixel section 100, for example.

[0203] Notice, Fig.15 This is just an example, and the arrangement positions of the through electrodes 17 and the arrangement positions of the readout electrodes 26 in the plurality of pixels P4 arranged in the pixel unit 100 of the present disclosure are not limited thereto. Fig.16 As shown, the through-electrodes 17 may also be provided at the midpoints of the four corners in each photoelectric conversion region 12 near the boundary between adjacent photoelectric conversion regions 12 . Fig.16 A modified example of the arrangement state of the plurality of pixels P4 in the pixel portion 100 is schematically shown.

[0204] <5. Fifth embodiment>

[0205] [Structure of pixel P5]

[0206] Fig.17 An example of a cross-sectional configuration in a pixel P5 as an image pickup element according to the fifth embodiment is schematically shown. Fig.18 1 is a schematic diagram of an example of an arrangement state of a plurality of pixels P5 in the XY plane. Like the pixel P1 as the image pickup element according to the first embodiment described above, the pixel P5 can be used as Figure 1 The pixel P included in the pixel section 100 in the solid-state imaging device 1 shown in FIG. Fig.17 and Fig.18 As shown in FIG. 1 , one pixel P5 includes four sub-pixels SP5, and each sub-pixel SP5 includes one charge accumulation electrode 25. Therefore, in the case where the pixel P5 according to the present embodiment is used as Figure 1 In the case of the pixel P shown, as an example, driving of the organic photoelectric converter 20 including one charge accumulation electrode 25 may be performed in units of sub-pixels SP5, and driving of one photoelectric converter 10 may be performed in units of pixels P5.

[0207] Fig.18 (A) to (D) show the Fig.17 The arrangement state at the height positions corresponding to the horizontal levels Lv1 to Lv3 and Lv5 in the Z-axis direction shown. That is, Fig.18 (A) shows the arrangement state of the on-chip lens 54 in the XY plane, Fig.18 (B) shows the arrangement state of the color filter 52 in the XY plane, Fig.18(C) shows the arrangement state of the charge accumulation electrode 25 in the XY plane, and Fig.18 (D) shows the arrangement state of the photoelectric conversion region 12 and the through-electrode 17 in the XY plane. Fig.18 In order to ensure visibility, the readout electrode 26 is also shown in (D). Fig.18 In (B), symbol PR5 represents the red pixel P5, symbol PG5 represents the green pixel P5, and symbol PB5 represents the blue pixel P5.

[0208] In the above-mentioned first embodiment, in the pixel unit 100, one on-chip lens 54, one color filter 52, one charge accumulation electrode 25, and one photoelectric conversion region 12 are arranged at positions corresponding to each other in the Z-axis direction. In contrast, in the present embodiment, at positions corresponding to each other in the Z-axis direction, one color filter 52, four charge accumulation electrodes 25, and one photoelectric conversion region 12 are arranged corresponding to one on-chip lens 54. More specifically, corresponding to one on-chip lens 54, one color filter 52, and one photoelectric conversion region 12, the charge accumulation electrodes 25 are arranged in two columns in the X-axis direction and in two rows in the Y-axis direction. That is, in the present embodiment, as Fig.17 and Fig.18 As shown, one pixel P5 includes four charge accumulation electrodes 25. In addition, in the pixel P5 according to the present embodiment, the inter-pixel area shading film 56 can be arranged, for example, between the organic photoelectric converter 20 and the on-chip lens 54 in the Z-axis direction, more specifically, for example, between the color filter 52 and the sealing film 51. The inter-pixel area shading film 56 includes a metal such as W (tungsten) and Al (aluminum) as a main component. The inter-pixel area shading film 56 includes a plurality of openings 56K and is arranged in the boundary portion with other adjacent pixels P5 in the XY plane, that is, the area between the color filters 52 of different colors, to form a lattice pattern as a whole. This makes it possible to suppress unwanted light from obliquely incident on the organic photoelectric converter 20 of the adjacent pixel P5 and prevent color mixing. In addition, in the plan view, the inter-pixel area shading film 56 is arranged in a manner that surrounds the photoelectric conversion region 12 of each pixel P5. This makes it possible to suppress unwanted light from obliquely incident on the photoelectric conversion region 12 of the adjacent pixel P5 and prevent color mixing. Fig.18In (B), the inter-pixel area light shielding film 56 is shown by a dotted line. Except for this point, the structure of the pixel P5 is basically the same as that of the pixel P1. In the present embodiment, specifically, the arrangement pitch of the color filter 52 and the arrangement pitch of the photoelectric conversion region 12 are consistent with each other, and therefore, the inter-pixel area light shielding film 56 is provided so that the anti-color mixing effect on both the organic photoelectric converter 20 and the photoelectric conversion region 12 can be expected. Here, the center position of each opening 56K in the inter-pixel area light shielding film 43 can be offset from the center position of the corresponding pixel P5. One reason for doing this is to reduce the change in the detection characteristics of the plurality of pixels P5 arranged in the pixel section 100, for example, to prevent the detection sensitivity of the pixel P5 arranged in the peripheral portion of the pixel section 100 from being reduced. In this case, the offset amount of the center position of each opening 56K relative to the center position of the corresponding pixel P5 can be increased from the center of the pixel section 100 to the peripheral portion of the pixel section 100. In particular, the offset amount can be changed nonlinearly from the center of the pixel section 100 to the peripheral portion of the pixel section 100. Note that the inter-pixel region light shielding film 56 is applicable to any pixel described in the embodiments and modifications in this specification except the pixel P5 according to the present embodiment. However, the inter-pixel region light shielding film 56 may not be provided in the pixels described in the embodiments and modifications.

[0209] [Pixel P5 functions and effects]

[0210] The pixel P5 according to this embodiment has the above-mentioned structure, which can simultaneously obtain a visible light image and an infrared light image including distance information at the same position in the in-plane direction. In addition, image plane phase difference information in the X-axis direction and the Y-axis direction can be obtained in each pixel P5 through visible light.

[0211] In addition, in the present embodiment, the through-electrode 17 and the readout electrode 26 are provided at positions not overlapping near the center of the on-chip lens 54 in the Z-axis direction, which makes it possible to improve the infrared light detection sensitivity in each pixel P5 .

[0212] In addition, even in the case where a plurality of pixels P5 according to the present embodiment are arranged, the center position of each opening portion 43K in the inter-pixel region light shielding film 43 may be offset from the center position of a corresponding one of the pixels P5. One reason for doing this is to reduce the variation in the detection characteristics of the plurality of pixels P5 arranged in the pixel section 100, for example, to prevent the detection sensitivity of the pixels P5 arranged in the peripheral portion of the pixel section 100 from being reduced. In this case, the offset amount of the center position of each opening portion 43K relative to the center position of the corresponding one of the pixels P5 may increase from the center of the pixel section 100 to the peripheral portion of the pixel section 100. In particular, it is preferred that the offset amount changes nonlinearly from the center of the pixel section 100 to the peripheral portion of the pixel section 100.

[0213] Furthermore, the interval between adjacent pixels P5 may increase from the center of the pixel section 100 to the peripheral portion of the pixel section 100. In particular, preferably, the interval changes nonlinearly from the center of the pixel section 100 to the peripheral portion of the pixel section 100. This makes it possible to perform pupil correction according to each image height in the plurality of pixels P5 arranged in the pixel section 100, for example.

[0214] Notice, Fig.18 This is just an example, and the arrangement positions of the through electrodes 17 and the readout electrodes 26 in the plurality of pixels P4 arranged in the pixel unit 100 of the present disclosure are not limited thereto. Fig.19 As shown, the through-electrodes 17 may also be arranged at the midpoints of the four corners in each photoelectric conversion region 12 near the boundary between adjacent photoelectric conversion regions 12 . Fig.19 Schematically shows a first variation of the arrangement of a plurality of pixels P5 in the pixel unit 100. Fig. 20 As shown, the through electrodes 17 may be provided at four corners in each photoelectric conversion region 12 near the boundaries between adjacent photoelectric conversion regions 12 and at the midpoints of the four corners in each photoelectric conversion region 12 . Fig. 20 A second modification example of the arrangement state of the plurality of pixels P5 in the pixel portion 100 is schematically shown.

[0215] In addition, if Fig.21A and Fig. 21B As shown, in each pixel P5, for example, the center position of the color filter 52 and the center position of the photoelectric conversion region 12 can be staggered by half in the X-axis direction and the Y-axis direction. Doing so can reduce the variation in the light receiving sensitivity to infrared light in each photoelectric conversion region 12. Note that Fig.21A and Fig. 21B A third modification example of the arrangement state of the plurality of pixels P5 in the pixel section 100 is schematically shown. Fig.21A Specifically, the positional relationship among the on-chip lens 54 , the photoelectric conversion region 12 , the through-electrode 17 , and the readout electrode 26 is shown. Fig. 21B The positional relationship among the on-chip lens 54 , the color filter 52 , and the photoelectric conversion region 12 is specifically shown.

[0216] <6. Sixth embodiment>

[0217] [Structure of pixel P6]

[0218] Fig. 22 An example of a cross-sectional configuration in a pixel P6 as an image pickup element according to the sixth embodiment is schematically illustrated. Fig.231 is a schematic diagram of an example of an arrangement state of a plurality of pixels P6 in the XY plane. Like the pixel P1 as the image pickup element according to the first embodiment described above, the pixel P6 can be used as Figure 1 The pixel P included in the pixel section 100 in the solid-state imaging device 1 shown in FIG. Fig. 22 and Fig.23 As shown in FIG. 1 , one pixel P6 includes four sub-pixels SP6, each of which includes one charge accumulation electrode 25. In addition, four pixels P6 are included in one pixel group PP6 and share one photoelectric converter 10. Therefore, when the pixel P6 according to the present embodiment is used as Figure 1 In the case of the pixel P shown, as an example, driving of the organic photoelectric converter 20 including one charge accumulation electrode 25 may be performed in units of sub-pixels SP6, and driving of one photoelectric converter 10 may be performed in units of pixel groups PP6.

[0219] Fig.23 (A) to (D) show the Fig. 22 The arrangement state at the height positions corresponding to the horizontal Lv1 to Lv3 and Lv5 in the Z-axis direction shown. That is, Fig.23 (A) shows the arrangement state of the on-chip lens 54 in the XY plane, Fig.23 (B) shows the arrangement state of the color filter 52 in the XY plane, Fig.23 (C) shows the arrangement state of the charge accumulation electrode 25 in the XY plane, and Fig.23 (D) shows the arrangement state of the photoelectric conversion region 12 and the through-electrode 17 in the XY plane. Fig.23 In order to ensure visibility, the readout electrode 26 is also shown in (D). Fig.23 In (B), symbol PR6 represents a red pixel P6, symbol PG6 represents a green pixel P6, and symbol PB6 represents a blue pixel P6.

[0220] In the above-mentioned first embodiment, in the pixel portion 100, one on-chip lens 54, one color filter 52, one charge accumulation electrode 25, and one photoelectric conversion region 12 are arranged at positions corresponding to each other in the Z-axis direction. In contrast, in the present embodiment, corresponding to one photoelectric conversion region 12, four on-chip lenses 54, four color filters 52, and sixteen charge accumulation electrodes 25 are arranged at positions corresponding to each other in the Z-axis direction. More specifically, corresponding to one photoelectric conversion region 12, the on-chip lenses 54 and the color filters 52 are arranged in two columns in the X-axis direction and in two rows in the Y-axis direction; corresponding to one photoelectric conversion region 12, the charge accumulation electrodes 25 are arranged in four columns in the X-axis direction and in four rows in the Y-axis direction. That is, in the present embodiment, as Fig. 22 and Fig.23 As shown, four pixels P6 adjacent to each other in the X-axis direction and the Y-axis direction are included in one pixel group PP6, and share one photoelectric converter 10. Except for this point, the configuration of the pixel P6 is substantially the same as that of the pixel P1.

[0221] [Pixel P6 functions and effects]

[0222] The pixel P6 according to the present embodiment has the above-mentioned structure, which can simultaneously obtain a visible light image and an infrared light image including distance information at the same position in the in-plane direction. In addition, image plane phase difference information in the X-axis direction and the Y-axis direction can be obtained in each pixel P6 through visible light.

[0223] In addition, in the present embodiment, the through-electrode 17 and the readout electrode 26 are provided at positions not overlapping near the center of the on-chip lens 54 in the Z-axis direction, which makes it possible to improve the infrared light detection sensitivity in each pixel P2 .

[0224] Furthermore, even in the case where a plurality of pixels P6 according to the present embodiment are arranged, the center position of each opening portion 43K in the inter-pixel region light shielding film 43 may be deviated from the center position of the corresponding one pixel P5. One reason for doing this is to reduce the variation in the detection characteristics of the plurality of pixels P6 arranged in the pixel portion 100, for example, to prevent the detection sensitivity of the pixels P6 arranged in the peripheral portion of the pixel portion 100 from being reduced. In this case, the offset amount of the center position of each opening portion 43K relative to the center position of the corresponding one pixel P6 may increase from the center of the pixel portion 100 to the peripheral portion of the pixel portion 100. In particular, it is preferred that the offset amount changes nonlinearly from the center of the pixel portion 100 to the peripheral portion of the pixel portion 100.

[0225] Furthermore, the interval between adjacent pixels P6 may increase from the center of the pixel section 100 to the peripheral portion of the pixel section 100. In particular, preferably, the interval changes nonlinearly from the center of the pixel section 100 to the peripheral portion of the pixel section 100. This makes it possible to perform pupil correction according to each image height in the plurality of pixels P6 arranged in the pixel section 100, for example.

[0226] Notice, Fig.23 This is just an example, and the arrangement positions of the through electrodes 17 and the readout electrodes 26 in the plurality of pixels P6 arranged in the pixel unit 100 of the present disclosure are not limited thereto. Fig.24 As shown, the through-electrode 17 may be arranged near the boundary between adjacent pixel groups PP6 to surround each on-chip lens 54 . Fig.24 A modified example of the arrangement state of the plurality of pixels P6 in the pixel portion 100 is schematically shown.

[0227] <7. Seventh embodiment>

[0228] [Structure of pixel P7]

[0229] Fig.25 An example of a cross-sectional configuration in a pixel P7 as an image pickup element according to the seventh embodiment is schematically shown. Like the pixel P1 as the image pickup element according to the first embodiment described above, the pixel P7 can be used as Figure 1 The pixel P included in the pixel section 100 in the solid-state imaging device 1 shown.

[0230] In addition to the configuration of the pixel P1, the pixel P7 according to the present embodiment further includes a pair of charge holding portions (MEM) 143A and 143B on the front surface 11A of the semiconductor substrate 11. The MEMs 143A and 143B are regions that temporarily hold the charge generated and accumulated in the photoelectric conversion region 12 to share the FDs 15A and 15B with other pixels. Except for this point, the configuration of the pixel P7 is substantially the same as that of the pixel P1. Note that the MEMs 143A and 143B have a configuration in which an insulating film and an electrode are stacked from the front surface 11A side. In addition, a configuration such as removing the floating diffusion layers 15A and 15B, providing the charge holding portions 143A and 143B adjacent to the TGs 141A and 141B, and providing the FDs 15A and 15B adjacent to the charge holding portions 143A and 143B may be adopted. Note that, in addition to the pixel P7 according to the present embodiment, the MEMs 143A and 143B may be appropriately applied to any pixel described as the respective embodiments and modifications in this specification.

[0231] [Pixel P7 functions and effects]

[0232] According to the pixel P7 of the present embodiment, the photoelectric converter 10 includes MEMs 143A and 143B, which makes it possible to share the floating diffusion layers 15A and 15B, thereby improving the installation efficiency of the imaging element on the semiconductor substrate. For example, increasing the area of ​​the amplifying transistor can improve the noise characteristics of the photoelectric conversion film. In addition, the pixel P7 has similar functions and effects to the pixel P1 according to the first embodiment described above.

[0233] <8. Eighth Embodiment>

[0234] Fig.26 An example of a cross-sectional configuration of a pixel P8 as an image pickup element according to the eighth embodiment is schematically shown. Like the pixel P1 as the image pickup element according to the first embodiment described above, the pixel P8 can be used as Figure 1 The pixel P included in the pixel section 100 in the solid-state imaging device 1 shown.

[0235] In addition to the configuration of the pixel P1 described in the first embodiment above, the pixel P8 according to the present embodiment further includes a filter 61 located on the incident side of the on-chip lens 54 (i.e., the side opposite to the organic photoelectric converter 20 as viewed from the on-chip lens 54). Note that Fig.26 An example is shown in which a plurality of color filters 52 of mutually different colors are arranged corresponding to one filter 61, one on-chip lens 54, one organic photoelectric conversion layer 22, one filter 42, and one photoelectric conversion region 12. For convenience, Fig.26 The color filters 52-1 and 52-2 are shown as being different colors from each other. Except for this point, the configuration of the pixel P8 is substantially the same as that of the pixel P1. Note that the pixel P8 is not limited to Fig.26 As shown. For example, one color filter 52 may be provided corresponding to one filter 61, or a plurality of on-chip lenses 54, a plurality of organic photoelectric conversion layers 22, a plurality of filters 42, and a plurality of photoelectric conversion regions 12 may be provided corresponding to one filter 61. Note that the organic photoelectric conversion layer 22 may be provided in common to some pixels P8, or may be provided in common to all the plurality of pixels P8 in the pixel portion 100. Alternatively, one filter 61 may be provided on a plurality of pixels P8. Note that the filter 61 is applicable to any of the pixels P1 to P7 described in the first to seventh embodiments and their modified examples described above.

[0236] FIG. 27A to FIG. 27C Schematically showing the wavelength dependence of the transmittance of the filter 61, the color filter 52, and the filter 42 in the pixel P8. Specifically, Fig.27A shows the transmittance distribution of the filter 61, Fig.27B shows the light transmittance distribution of the color filter 52, Fig.27C 4 shows the light transmittance distribution of the filter 42. In addition, Fig.27D The relationship between the wavelength incident on the organic photoelectric conversion layer 22 and the sensitivity to the incident light on the organic photoelectric conversion layer 22 and the relationship between the wavelength incident on the photoelectric conversion region 12 and the sensitivity to the incident light on the photoelectric conversion region 12 are shown. Fig.27B In FIG. 5 , the transmittance distribution curve of the red filter 52R is represented by R, the transmittance distribution curve of the green filter 52G is represented by G, and the transmittance distribution curve of the blue filter 52B is represented by B. Fig.27C, the transmittance distribution of the filter 61 is indicated by a dotted line, and the transmittance distribution of the filter 42 is indicated by a solid line. The filter 61 is a so-called dual-bandpass filter, and is an optical member that has a transmission wavelength range in the visible light range and the infrared light range and selectively allows visible light (e.g., light with a wavelength of 400nm to 650nm, inclusive) and a portion of infrared light (e.g., light with a wavelength of 800nm ​​to 900nm, inclusive) to pass through. The visible light and a portion of the infrared light in the incident light pass through the filter 61 ( Fig.27A Of the light that passes through the filter 61, visible light in the blue region and part of the infrared light pass through the blue filter 52B ( Fig.27B ). In the case where the organic photoelectric conversion layer 22 is configured to detect some or all wavelengths in the visible light range and is insensitive to the infrared light range, in the light passing through the blue filter 52B, the visible light in the blue region is absorbed by the organic photoelectric conversion layer 22, and in the light passing through the blue filter 52B, part of the infrared light passes through the organic photoelectric conversion layer 22. In the light passing through the organic photoelectric conversion layer 22, the infrared light passing through the filter 42 is incident on the photoelectric conversion region 12. The same applies to the red filter 52R and the green filter 52G. As a result, as Fig.27D As shown, visible light information (R, G, B) is obtained in the organic photoelectric conversion layer 22, and infrared light information (IR) is obtained in the photoelectric conversion region 12. FIG. 27A to FIG. 27D As shown, according to the pixel P8, only infrared light within a predetermined wavelength range that has passed through all of the filter 61, the color filter 52, the organic photoelectric conversion layer 22, and the filter 42 is selectively incident on the photoelectric conversion region 12 and is photoelectrically converted.

[0237] Notice, FIG. 27A to FIG. 27D The characteristics in are only examples, and the transmittance distribution of the filter applicable to the pixel P8 is not limited to Figures 27A to 27D For example, as Figures 28A to 28D The filter 61A of the modified example shown can adopt such a filter to selectively allow light in a continuous wavelength range from the visible light range to a part of the infrared light range to pass through. Specifically, Fig.28A shows the transmittance distribution of the filter 61A, Fig.28B shows the light transmittance distribution of the color filter 52, Fig.28C 4 shows the light transmittance distribution of the filter 42. In addition, Fig.28D The relationship between the wavelength incident on the organic photoelectric conversion layer 22 and the sensitivity to the light incident on the organic photoelectric conversion layer 22 and the relationship between the wavelength incident on the photoelectric conversion region 12 and the sensitivity to the light incident on the photoelectric conversion region 12 are shown when the filter 61A is used.

[0238] <9. Ninth Embodiment>

[0239] Fig.29 An example of a cross-sectional configuration of a pixel P9 as an image pickup element according to the ninth embodiment is schematically shown. Like the pixel P1 as the image pickup element according to the first embodiment described above, the pixel P9 can be used as Figure 1 The pixel P included in the pixel section 100 in the solid-state imaging device 1 shown.

[0240] In addition to the configuration of the pixel P8 described in the eighth embodiment described above, the pixel P9 according to the present embodiment further includes an inner lens INL between the organic photoelectric converter 20 and the photoelectric converter 10, more specifically, an inner lens INL between the organic photoelectric conversion layer 22 and the optical filter 42. Except for this point, the configuration of the pixel P9 is substantially the same as that of the pixel P8. Note that the configuration in which the inner lens INL is provided between the organic photoelectric conversion layer 22 and the optical filter 42 is applicable to any of the pixels P1 to P7 described in the first to seventh embodiments and their variations.

[0241] Alternatively, you can Fig.30 As in the pixel P9A shown in the figure, an optical waveguide WG is provided instead of the inner lens INL. Fig.30 Schematic diagram of the cross-sectional structure of pixel P9A of the image pickup element as a modification of the ninth embodiment. Note that the structure in which the optical waveguide WG is provided between the organic photoelectric conversion layer 22 and the filter 42 is applicable to any of the pixels P1 to P7 described in the first to seventh embodiments and their modifications.

[0242] Fig.31 2 is a schematic diagram of an example of an arrangement state of a plurality of pixels P9 or P9A in the XY plane. Fig.31 (A) to (E) show the Fig.29 and Fig.30 The arrangement state of the height positions corresponding to the horizontal Lv1 to Lv5 in the Z-axis direction shown. That is, Fig.31 (A) shows the arrangement state of the on-chip lens 54 in the XY plane, Fig.31 (B) shows the arrangement state of the color filter 52 in the XY plane, Fig.31 (C) shows the arrangement state of the charge accumulation electrode 25 in the XY plane, Fig.13 (D) shows the arrangement state of the inner lens INL or the optical waveguide WG in the XY plane, and Fig.31 (E) shows the arrangement state of the photoelectric conversion region 12 and the through electrode 17 in the XY plane. Fig.31In (B), symbols PR9 and PR9A represent red pixels P9 and P9A, symbols PG9 and PG9A represent green pixels P9 and P9A, and symbols PB9 and PB9A represent blue pixels P9 and P9A. Fig.31 In (E), the through-electrode 17 is disposed near the boundary between adjacent photoelectric conversion regions 12 at the four corners of each photoelectric conversion region 12, however, the arrangement position of the through-electrode 17 is not limited thereto. For example, the through-electrode 17 may be disposed at the midpoint of the four corners of each photoelectric conversion region 12. Alternatively, the through-electrode 17 may be disposed at the four corners of each photoelectric conversion region 12 near the boundary between adjacent photoelectric conversion regions 12 and at the midpoint of the four corners of each photoelectric conversion region 12. In addition, Fig.31 (E) shows the inter-pixel region light shielding film 43 , however, the pixels P9 and P9A as the present embodiment and its modified example may not include the inter-pixel region light shielding film 43 .

[0243] In the pixels P9 and P9A according to the present embodiment and its variations, an inner lens INL or an optical waveguide WG is provided, which can avoid vignetting of incident light inclined in the inter-pixel region light shielding wall 16 relative to the back surface 11B extending in the XY plane, for example, and can improve the inclined incidence characteristics.

[0244] In addition, if Fig.32A and Fig.32B As shown, in each pixel P9, for example, the center position of the color filter 52 and the center position of the photoelectric conversion region 12 may be offset by half in the X-axis direction and the Y-axis direction. In this case, preferably, the arrangement position of the inner lens INL is also offset according to the arrangement position of the photoelectric conversion region 12. Doing so can reduce the variation in the light receiving sensitivity to infrared light in each photoelectric conversion region 12 and prevent color mixing between adjacent pixels P9. Note that Fig.32A and Fig.32B A modified example of the arrangement state of the plurality of pixels P9 in the pixel portion 100 is schematically shown. Fig.32A Specifically, the positional relationship among the on-chip lens 54 , the photoelectric conversion region 12 , the through-electrode 17 , and the readout electrode 26 is shown. Fig.32B Specifically, the positional relationship between the on-chip lens 54, the color filter 52, the inner lens INL, and the photoelectric conversion region 12 is shown. The same applies to the pixel P9A using the optical waveguide WG instead of the inner lens INL. In addition, even in the case where the inner lens INL and the optical waveguide WG are not used, as shown in FIG. Fig.32A and Fig.32BIn the form shown, the center position of the color filter 52 and the center position of the photoelectric conversion region 12 may also be offset by half in the X-axis direction and the Y-axis direction. Note that the arrangement positions of the through electrodes 17 and the arrangement positions of the readout electrodes 26 in the plurality of pixels P9 and P9A are not limited to Fig.31 and Fig.32A Arrangement location shown.

[0245] <10. Tenth Embodiment>

[0246] Fig.33A and Fig.33B They are respectively an enlarged vertical cross-sectional view and an enlarged horizontal cross-sectional view of the vicinity of the through-electrode 17 in the image pickup element as the tenth embodiment. It should be noted that Fig.33A Shown along Fig.33B The configuration according to the present embodiment is applicable to any of the pixels P1 to P9 in the first to ninth embodiments described above and pixels as their modified examples.

[0247] The present embodiment has a configuration in which a metal layer 18 is provided in a manner that surrounds the through electrode 17 in the XY cross section and extends in the Z-axis direction. The through electrode 17 and the metal layer 18 are electrically insulated from each other by an insulating layer Z1, and the insulating layer Z1 is provided to fill the gap between the through electrode 17 and the metal layer 18. The metal layer 18 can also serve as, for example, an inter-pixel region light shielding wall 16. The fixed charge layer 13 is provided outside the metal layer 18 via the insulating layer Z2.

[0248] The through electrode 17 is formed using, for example, tungsten (W) or the like. In addition, the metal layer 18 is formed using, for example, tungsten (W). However, aluminum or the like may be used for the metal layer 18. The insulating layers Z1 and Z2 are formed using, for example, insulating materials such as SiOx (silicon oxide) and aluminum oxide. In addition, a gap may be provided between the inter-pixel region light-shielding wall 16 and the through electrode 17 instead of the insulating layer Z1 to insulate the inter-pixel region light-shielding wall 16 and the through electrode 17 from each other. Similarly, a gap may be provided between the inter-pixel region light-shielding wall 16 and the fixed charge layer 13 instead of the insulating layer Z2 to insulate the inter-pixel region light-shielding wall 16 and the fixed charge layer 13 from each other. Note that the constituent materials of the individual components are not limited to those described above.

[0249] For example, the through electrode 17 is a transmission path for transmitting signal charges generated in the organic photoelectric converter 20 and transmitting a voltage for driving the charge accumulation electrode 25. The metal layer 18 is a light shielding wall in the inter-pixel region and is also an electrostatic shielding film. In the absence of the metal layer 18, when the fixed charge layer 13 has, for example, a negative fixed charge, a positive voltage is applied to the through electrode 17, which may impair the function of the fixed charge layer 13, thereby causing the generation of dark current. Therefore, the metal layer 18 is provided to electrically shield the through electrode 17 and the fixed charge layer 13, which can suppress the generation of such dark current. Note that the metal layer 18 may be replaced with a material having light shielding properties and non-conductivity. Fig.33B The portion of the metal layer 18 shown is excluding the portion surrounding the through electrode 17. One of the reasons is that the portion of the metal layer 18 surrounding the through electrode 17 is formed using a metal material such as tungsten and aluminum, which achieves the effect of the above-mentioned electrostatic shielding film. In addition, in the case of providing the metal layer 18 as an electrostatic shielding film, the portion of the metal layer 18 other than the portion surrounding the through electrode 17 may not be provided.

[0250] In addition, the vicinity of the through electrode 17 may also have Fig.34A and Fig.34B The structure shown in FIG. does not include the fixed charge layer 13 opposite to the metal layer 18 via the insulating layer Z2. Fig.34A and Fig.34B The construction shown in Fig.33A and Fig.33B The metal layer 18 is a light shielding wall between pixels and shields the electric field of the through electrode to prevent the voltage applied to the through electrode 17 from affecting the semiconductor substrate 11. In addition, by applying an appropriate voltage to the metal layer 18, an effect similar to that of the fixed charge layer can be obtained. In addition, a material having light shielding properties and non-conductivity can be used instead. Fig.34B The portion of the metal layer 18 shown except for the portion surrounding the through electrode 17. Note that even in Fig.34A and Fig.34B In the illustrated configuration, preferably, the fixed charge layer 13 is provided on the back surface 11B side of the semiconductor substrate 11 .

[0251] Note that according to Fig.33A , Fig.33B , Fig.34A and Fig.34B The configuration of the present embodiment shown, that is, the configuration in which the metal layer 18 is provided to surround the through electrode 17 in the XY cross section and to extend in the Z-axis direction, is applicable to pixels other than the pixels described in the first to ninth embodiments and the like. For example, this configuration is applicable as Fig.35The pixel P10 of the modified example of the tenth embodiment shown in FIG. 1 includes a readout electrode 26 extending through the pixel P10, and does not include a semiconductor layer 21 and a charge accumulation electrode 25. Fig.35 In the pixel P10 in FIG. 1 , one TG 141, one FD 15, etc. are provided corresponding to one photoelectric conversion region 12. In addition, as described above, a metal layer 18 which also serves as a light shielding wall 16 in an inter-pixel region is provided. In addition to this, Fig.35 The pixel P10 in FIG. Figure 2A The pixel P1 shown in FIG. 1 and the like are basically constructed in the same manner. Fig.35 , the pixel P10 includes the color filter 52, however, the pixel P10 may not include the color filter 52. In addition, in the pixel P10, the wavelength ranges in which the organic photoelectric converter 20 and the photoelectric converter 10 each have sensitivity are freely settable. In addition, the organic photoelectric conversion layer 22 of the organic photoelectric converter 20 may include a photoelectric conversion material other than an organic substance, such as a quantum dot.

[0252] <11. Eleventh Embodiment>

[0253] Fig.36A is a schematic diagram of an overall configuration example of a light detection system 201 according to an eleventh embodiment of the present disclosure. Fig.36B 2 is a schematic diagram of an example of a circuit structure of the light detection system 201. The light detection system 201 includes a light emitting device 210 as a light source section that emits infrared light L2 and a light detector 220 as a light receiving section including a photoelectric conversion element. As the light detector 220, the above-mentioned solid-state imaging device 1 can be used. The light detection system 201 may further include a system controller 230, a light source driving section 240, a sensor controller 250, a light source side optical system 260, and a camera side optical system 270.

[0254] The light detector 220 can detect the light L1 and the light L2. The light L1 is the ambient light from the outside ( Fig.36A). Light L2 is light emitted by the light emitting device 210 and then reflected by the object 200. Light L1 is, for example, visible light, and light L2 is, for example, infrared light. Light L1 can be detected by an organic photoelectric converter in the light detector 220, and light L2 can be detected by a photoelectric converter in the light detector 220. Image information of the object 200 can be obtained from light L1, and distance information between the object 200 and the light detection system 201 can be obtained from light L2. The light detection system 201 can be installed on electronic devices such as smart phones and moving bodies such as cars. The light emitting device 210 can be constructed using, for example, a semiconductor laser, a surface emitting semiconductor laser, or a vertical cavity surface emitting laser (VCSEL). As a method for the light detector 220 to detect the light L2 emitted by the light emitting device 210, for example, an iTOF method can be used, however, the method is not limited thereto. In the iTOF method, for example, the photoelectric converter is able to measure the distance to the object 200 by time of flight (TOF). As a method for the light detector 220 to detect the light L2 emitted by the light emitting device 210, for example, a structured light method or a stereoscopic vision method can be used. For example, in the structured light method, light having a predetermined pattern is projected onto the object 200, and the deformation of the pattern is analyzed, so that the distance between the light detection system 201 and the object 200 can be measured. In addition, in the stereoscopic vision method, for example, two or more cameras are used to obtain two or more images of the object 200 viewed from two or more different perspectives, so that the distance between the light detection system 201 and the object 200 can be measured. It should be noted that the system controller 230 can synchronously control the light emitting device 210 and the light detector 220.

[0255] <12. Application examples of electronic devices>

[0256] Fig.37 2 is a block diagram showing a configuration example of an electronic device 2000 to which the present technology is applied. For example, the electronic device 2000 has a function as a camera.

[0257] The electronic device 2000 includes an optical section 2001 having a lens group and the like, a photodetector 2002 to which the above-mentioned solid-state imaging device 1 and the like (hereinafter referred to as the solid-state imaging device 1 and the like) is applied, and a DSP (digital signal processor) circuit 2003 as a camera signal processing circuit. In addition, the electronic device 2000 also includes a frame memory 2004, a display section 2005, a recording section 2006, an operation section 2007, and a power supply section 2008. The DSP circuit 2003, the frame memory 2004, the display section 2005, the recording section 2006, the operation section 2007, and the power supply section 2008 are connected to each other via a bus 2009.

[0258] The optical section 2001 captures incident light (image light) from an object and forms an image of the incident light on an imaging plane of the imaging device 2002. The imaging device 2002 converts the light amount of the incident light that forms an image on the imaging plane through the optical section 2001 into an electrical signal pixel by pixel, and outputs the electrical signal as a pixel signal.

[0259] The display section 2005 includes, for example, a panel-type display device such as a liquid crystal panel and an organic EL panel, and displays a moving image or a still image captured by the light detector 2002. The recording section 2006 records the moving image or the still image captured by the light detector 2002 on a recording medium such as a hard disk or a semiconductor memory.

[0260] The operation section 2007 issues operation instructions for various functions of the electronic device 2000 under the operation of the user. The power supply section 2008 appropriately supplies various types of power to the DSP circuit 2003, frame memory 2004, display section 2005, recording section 2006 and operation section 2007 as power for operating these supply targets.

[0261] As described above, using the above-described solid-state image pickup device 1 or the like as the photodetector 2002 enables the expectation of obtaining an excellent image.

[0262] <13. Practical application examples of in vivo information acquisition systems>

[0263] The technology according to the present disclosure (the present technology) is applicable to various products. For example, the technology according to the present disclosure can be applied to an endoscopic surgery system.

[0264] Fig.38 : is a block diagram showing an example of a schematic configuration of a system for acquiring in vivo information of a patient using a capsule-type endoscope to which a technology according to an embodiment of the present disclosure (the present technology) can be applied.

[0265] The in-vivo information acquisition system 10001 includes a capsule endoscope 10100 and an external control device 10200 .

[0266] The capsule endoscope 10100 is swallowed by the patient during the examination. The capsule endoscope 10100 has a camera function and a wireless communication function, and enters the inside of an organ such as the stomach or intestine by peristaltic movement for a period of time, while continuously taking images of the inside of the organ (hereinafter referred to as in-vivo images) at predetermined intervals until it is naturally discharged from the patient's body. Then, the capsule endoscope 10100 continuously sends the information of the in-vivo images to the external control device 10200 outside the body by wireless transmission.

[0267] The external control device 10200 controls the operation of the in-vivo information acquisition system 10001 as a whole. In addition, the external control device 10200 receives in-vivo image information transmitted thereto from the capsule endoscope 10100, and generates image data for displaying the in-vivo image on a display device (not shown) based on the received in-vivo image information.

[0268] In the in-vivo information acquisition system 10001, at any time during the period from when the capsule endoscope 10100 is swallowed to when it is excreted, an in-vivo image of the patient's in-vivo condition can be acquired.

[0269] The structure and function of the capsule endoscope 10100 and the external control device 10200 are described in detail below.

[0270] The capsule endoscope 10100 includes a capsule-shaped shell 10101 , which contains a light source unit 10111 , an image pickup unit 10112 , an image processing unit 10113 , a wireless communication unit 10114 , a power supply unit 10115 , a power supply unit 10116 and a control unit 10117 .

[0271] For example, the light source unit 10111 includes a light source such as a light emitting diode (LED), and irradiates light onto an image pickup field of view of the image pickup unit 10112 .

[0272] The image pickup unit 10112 includes an image pickup element and an optical system including a plurality of lenses provided in the front stage of the image pickup element. Reflected light (hereinafter referred to as observation light) of light irradiated on the biological tissue as the observation object is converged by the optical system and introduced into the image pickup element. In the image pickup unit 10112, the incident observation light is photoelectrically converted by the image pickup element, thereby generating an image signal corresponding to the observation light. The image signal generated by the image pickup unit 10112 is provided to the image processing unit 10113.

[0273] The image processing unit 10113 includes a processor such as a central processing unit (CPU) or a graphics processing unit (GPU), and performs various signal processing on the image signal generated by the image pickup unit 10112. The image processing unit 10113 provides the image signal on which the signal processing has been performed to the wireless communication unit 10114 as RAW data.

[0274] The wireless communication unit 10114 performs predetermined processing such as modulation processing on the image signal on which the signal processing has been performed by the image processing unit 10113, and transmits the obtained image signal to the external control device 10200 through the antenna 10114A. In addition, the wireless communication unit 10114 receives a control signal related to the drive control of the capsule endoscope 10100 from the external control device 10200 through the antenna 10114A. The wireless communication unit 10114 provides the control signal received from the external control device 10200 to the control unit 10117.

[0275] The power supply unit 10115 includes an antenna coil for power reception, a power regeneration circuit for regenerating power according to a current generated in the antenna coil, a booster circuit, etc. The power supply unit 10115 generates power using the principle of contactless charging.

[0276] The power supply unit 10116 includes a secondary battery and stores the power generated by the power supply unit 10115. Fig.38 In order to avoid complicated illustration, arrow marks and the like indicating the supply destination of the power from the power supply unit 10116 are omitted. However, the power stored in the power supply unit 10116 is supplied to and can be used to drive the light source unit 10111, the image pickup unit 10112, the image processing unit 10113, the wireless communication unit 10114, and the control unit 10117.

[0277] The control unit 10117 includes a processor such as a CPU, and appropriately controls the driving of the light source unit 10111, the image pickup unit 10112, the image processing unit 10113, the wireless communication unit 10114 and the power supply unit 10115 according to a signal control sent thereto from the external control device 10200.

[0278] The external control device 10200 includes a processor such as a CPU or a GPU, a microcomputer in which a processor and a storage element such as a memory are mixed, a control board, etc. The external control device 10200 sends a control signal to the control unit 10117 of the capsule endoscope 10100 through the antenna 10200A to control the operation of the capsule endoscope 10100. In the capsule endoscope 10100, for example, according to the control signal from the external control device 10200, the irradiation condition of the light of the light source unit 10111 to the observation object can be changed. In addition, the image pickup condition (for example, the frame rate, the exposure value, etc. of the image pickup unit 10112) can be changed according to the control signal from the external control device 10200. In addition, the essence of the processing of the image processing unit 10113 or the conditions for sending the image signal from the wireless communication unit 10114 (for example, the transmission interval, the number of transmitted images, etc.) can be changed according to the signal control from the external control device 10200.

[0279] In addition, the external control device 10200 performs various image processing on the image signal sent to it from the capsule endoscope 10100 to generate image data for displaying the captured in-vivo image on the display device. As image processing, various signal processing such as development processing (demosaic processing), image quality improvement processing (bandwidth enhancement processing, super-resolution processing, noise reduction (NR) processing and / or image stabilization processing) and / or magnification processing (electronic zoom processing) can be performed. The external control device 10200 controls the drive of the display device based on the generated image data so that the display device displays the captured in-vivo image. Alternatively, the external control device 10200 can also control a recording device (not shown) to record the generated image data, or control a printing device (not shown) to output the generated image data by printing.

[0280] One example of an in vivo information acquisition system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the image pickup unit 10112 in the above-described configuration. Despite the small size, high image detection accuracy can be achieved.

[0281] <14. Examples of practical applications of endoscopic surgery systems>

[0282] The technology according to the present disclosure (the present technology) is applicable to various products. For example, the technology according to the present disclosure can be applied to an endoscopic surgery system.

[0283] Fig.39 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to an embodiment of the present disclosure (the present technology) can be applied.

[0284] exist Fig.39, a state is shown in which a surgeon (physician) 11131 is using an endoscopic surgery system 11000 to perform surgery on a patient 11132 on a bed 11133. As shown in the figure, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as a pneumoperitoneum tube 11111 and an energy device 11112, a support arm device 11120 supporting the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are loaded.

[0285] The endoscope 11100 includes a lens barrel 11101 having a region of a predetermined length from its distal end for insertion into a body cavity of a patient 11132, and a camera 11102 connected to the proximal end of the lens barrel 11101. In the illustrated example, the endoscope 11100 is shown as a rigid endoscope having a rigid lens barrel 11101. However, the endoscope 11100 may also include a lens barrel 11101 having a flexible type as a flexible endoscope.

[0286] The lens barrel 11101 has an opening at its distal end, in which an objective lens is installed. The light source device 11203 is connected to the endoscope 11100, so that the light generated by the light source device 11203 is introduced into the distal end of the lens barrel 11101 through the light guide extending inside the lens barrel 11101 and irradiated toward the observation target in the body cavity of the patient 11132 through the objective lens. Note that the endoscope 11100 can be a forward-looking endoscope, or can be an oblique-looking endoscope or a side-looking endoscope.

[0287] The optical system and the image pickup element are arranged inside the camera head 11102 so that the reflected light (observation light) from the observation target is focused on the image pickup element through the optical system. The observation light is photoelectrically converted by the image pickup element to generate an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image. The image signal is transmitted to the CCU 11201 as RAW data.

[0288] The CCU 11201 includes a central processing unit (CPU), a graphics processing unit (GPU), etc., and integrally controls the operations of the endoscope 11100 and the display device 11202. In addition, the CCU 11201 receives an image signal from the camera 11102, and performs various image processing such as development processing (demosaic processing) on ​​the image signal, for example, for displaying an image based on the image signal.

[0289] The display device 11202 displays an image based on an image signal subjected to image processing by the CCU 1121 under the control of the CCU 11201 .

[0290] For example, the light source device 11203 includes a light source such as a light emitting diode (LED), and provides illumination light to the endoscope 11100 when photographing a surgical area.

[0291] The input device 11204 is an input interface for the endoscopic surgery system 11000. The user can input various information or instructions to the endoscopic surgery system 11000 through the input device 11204. For example, the user can input instructions to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

[0292] The treatment tool control device 11205 controls the driving of the energy device 11112 to perform cauterization or cutting of tissues, sealing of blood vessels, etc. The pneumoperitoneum device 11206 delivers gas to the body cavity of the patient 11132 through the pneumoperitoneum tube 11111 to expand the body cavity, thereby ensuring the field of view of the endoscope 11100 and ensuring the working space of the surgeon. The recorder 11207 is a device capable of recording various information related to the operation. The printer 11208 is a device capable of printing various information related to the operation in various forms such as text, images, or graphics.

[0293] Note that when photographing the surgical site, the light source device 11203 that provides irradiation light to the endoscope 11100 may include a white light source, which includes, for example, an LED, a laser light source, or a combination thereof. In the case where the white light source includes a combination of red, green, and blue (RGB) laser light sources, since the output intensity and output timing can be controlled with high accuracy for each color (each wavelength), the light source device 11203 can perform white balance adjustment of the captured image. In addition, in this case, if the laser beams from the respective RGB laser sources are irradiated on the observation target in a time-division manner, and the drive of the image pickup element of the camera 11102 is controlled synchronously with the irradiation timing. Then it is also possible to capture images corresponding to R, G, and B colors, respectively, in a time-division manner. According to this method, a color image can be obtained even if a color filter is not provided for the image pickup element.

[0294] In addition, the light source device 11203 can be controlled to change the light intensity to be output every predetermined time. By controlling the drive of the image pickup element of the camera 11102 in synchronization with the timing of the change in light intensity, images are acquired in a time-division manner, and the images are synthesized, so that a high dynamic range image can be created, such an image has no underexposed shadows and overexposed highlights.

[0295] In addition, the light source device 11203 can be configured to provide light of a predetermined wavelength band prepared for special light observation. In special light observation, for example, by utilizing the wavelength dependence of the absorption of light in body tissue, light with a narrower band than the irradiation light (i.e., white light) during ordinary observation is irradiated to perform narrow-band observation (narrow-band imaging) for imaging predetermined tissues such as blood vessels in the surface part of the mucosa with high contrast. Alternatively, in special light observation, fluorescence observation can be performed to acquire an image by irradiating fluorescence generated by excitation light. In fluorescence observation, fluorescence from human tissue can be observed by irradiating excitation light onto human tissue (autofluorescence observation), or a fluorescent image can be obtained by locally injecting a reagent such as indocyanine green (ICG) into human tissue and irradiating excitation light corresponding to the fluorescence wavelength of the reagent on the human tissue. The light source device 11203 can be configured to provide narrow-band light and / or excitation light suitable for special light observation as described above.

[0296] Fig.40 It is shown Fig.39 A block diagram of an example of the functional configuration of the camera 11102 and the CCU 11201 shown in FIG.

[0297] The camera 11102 includes a lens unit 11401, an image pickup unit 11402, a driving unit 11403, a communication unit 11404, and a camera control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera 11102 and the CCU 11201 are connected to each other through a transmission cable 11400 for communication.

[0298] The lens unit 11401 is an optical system, and is provided at a connection position with the lens barrel 11101. Observation light incident from the distal end of the lens barrel 11101 is guided to the camera 11102 and introduced into the lens unit 11401. The lens unit 11401 includes a combination of a plurality of lenses, including a zoom lens and a focus lens.

[0299] The number of image pickup elements included in the image pickup unit 11402 can be one (single-board type) or multiple (multi-board type). In the case where the image pickup unit 11402 is constructed as a multi-board type, for example, image signals corresponding to R, G, and B, respectively, are generated by the image pickup elements, and the image signals can be synthesized to obtain a color image. The image pickup unit 11402 can also be constructed to have a pair of image pickup elements for acquiring a right-eye image signal and a left-eye image signal for three-dimensional (3D) display. If 3D display is performed, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical area. It is to be noted that in the case where the image pickup unit 11402 is constructed as a multi-board type, a system of multiple lens units 11401 is set corresponding to each image pickup element.

[0300] In addition, the image pickup unit 11402 may not necessarily be provided on the camera head 11102. For example, the image pickup unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.

[0301] The driving unit 11403 includes an actuator and moves the zoom lens and the focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera control unit 11405. Therefore, the magnification and focus of the image captured by the image pickup unit 11402 can be appropriately adjusted.

[0302] The communication unit 11404 includes a communication device for transmitting and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal acquired from the image pickup unit 11402 to the CCU 11201 through the transmission cable 11400 as RAW data.

[0303] In addition, the communication unit 11404 receives a control signal for controlling the driving of the camera 11102 from the CCU 11201, and provides the control signal to the camera control unit 11405. The control signal includes information related to imaging conditions, for example, information specifying a frame rate of an image to be captured, information specifying an exposure value when capturing an image, and / or information specifying a magnification and a focus when capturing an image.

[0304] It should be noted that imaging conditions such as frame rate, exposure value, magnification, or focus may be specified by the user or may be automatically set based on the acquired image signal by the control unit 11413 of the CCU 11201. In the latter case, the endoscope 11100 has built-in automatic exposure (AE) function, automatic focus (AF) function, and automatic white balance (AWB) function.

[0305] The camera control unit 11405 controls the driving of the camera 11102 based on the control signal from the CCU 11201 received through the communication unit 11404 .

[0306] The communication unit 11411 includes a communication device for transmitting and receiving various information to and from the camera 11102. The communication unit 11411 receives an image signal transmitted thereto from the camera 11102 through the transmission cable 11400.

[0307] Furthermore, the communication unit 11411 transmits a control signal for controlling the driving of the camera 11102 to the camera 11102. The image signal and the control signal may be transmitted through electrical communication, optical communication, or the like.

[0308] The image processing unit 11412 performs various image processing on the image signal in the form of RAW data transmitted from the camera 11102 .

[0309] The control unit 11413 performs various controls related to capturing images of the operation area, etc. through the endoscope 11100 and displaying captured images obtained by capturing images of the operation area, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102 .

[0310] In addition, the control unit 11413 controls the display device 11202 to display a captured image that images the surgical area, etc., based on the image signal that has been image-processed by the image processing unit 11412. Thus, the control unit 11413 can use various image recognition technologies to recognize various objects in the captured image. For example, the control unit 11413 can recognize surgical tools such as forceps, specific living areas, bleeding, and fog when the energy device 11112 is used, etc., by detecting the shape and color of the edge of the object included in the captured image. When the control unit 11413 controls the display device 11202 to display the captured image, the control unit 11413 can use the recognition result to display various surgical support information in a superimposed manner with the image of the surgical area. In the case where the surgical support information is displayed in a superimposed manner and provided to the surgeon 11131, the burden of the surgeon 11131 can be reduced, and the surgeon 11131 can reliably perform the operation.

[0311] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 to each other is an electric signal cable for electric signal communication, an optical fiber for optical communication, or a composite cable for both electric and optical communication.

[0312] Here, in the example shown, although communication is performed in wired communication by using the transmission cable 11400, communication between the camera 11102 and the CCU 11201 may be performed by wireless communication.

[0313] An example of an endoscopic surgery system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the image pickup unit 11402 of the camera 11102 in the above-mentioned configuration. Applying the technology according to the present disclosure to the image pickup unit 11402 makes it possible to obtain a clearer image of the surgical field, thereby improving the surgeon's visibility of the surgical field.

[0314] It should be noted that an endoscopic surgical system is used as an example for description here, but in addition, the technology according to the present disclosure can also be applied to, for example, a microscope surgical system, etc.

[0315] <15. Examples of practical applications in mobile objects>

[0316] The technology according to the present disclosure (the present technology) is applicable to various products. For example, the technology according to the present disclosure can be implemented in the form of a device to be installed on any type of mobile body such as a car, an electric car, a hybrid car, a motorcycle, a bicycle, a personal mobile body, an airplane, a drone, a ship, and a robot.

[0317] Fig.41 : is a block diagram showing an example of a schematic configuration of a vehicle control system as an example of a moving body control system to which the technology according to the embodiment of the present disclosure can be applied.

[0318] The vehicle control system 12000 includes a plurality of electronic control units interconnected via a communication network 12001. Fig.41 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. In addition, a microcomputer 12051, a sound / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are illustrated as a functional configuration of the integrated control unit 12050.

[0319] The drive system control unit 12010 controls the operation of the devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 serves as a control device for the following devices: a drive force generating device such as an internal combustion engine or a drive motor that generates the drive force of the vehicle, a drive force transmitting mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating the braking force of the vehicle, etc.

[0320] The body system control unit 12020 controls the operation of various devices provided on the body according to various programs. For example, the body system control unit 12020 is used as a control device for a keyless entry system, a smart key system, a power window device, or various lights (such as headlights, reverse lights, brake lights, turn signal lights, or fog lights, etc.). In this case, radio waves sent from a mobile device that replaces the key or signals of various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these input radio waves or signals, and controls the door lock device, power window device, lights, etc. of the vehicle.

[0321] The vehicle exterior information detection unit 12030 detects information about the exterior of the vehicle including the vehicle control system 12000. For example, the vehicle exterior information detection unit 12030 is connected to the camera unit 12031. The vehicle exterior information detection unit 12030 causes the camera unit 12031 to capture an image of the exterior of the vehicle and receives the captured image. Based on the received image, the vehicle exterior information detection unit 12030 can perform a detection process on an object such as a person, a vehicle, an obstacle, a sign, text on the road surface, or perform a process of detecting its distance.

[0322] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 may output the electrical signal as an image, or may output the electrical signal as information related to the measured distance. In addition, the light received by the imaging unit 12031 may be visible light, or may be invisible light such as infrared rays.

[0323] The in-vehicle information detection unit 12040 detects information related to the interior of the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver state detection unit 12041 that detects the state of the driver. The driver state detection unit 12041 includes, for example, a camera that takes a picture of the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or the driver's concentration level, or can determine whether the driver is dozing off.

[0324] The microcomputer 12051 can calculate the control target value of the driving force generating device, the steering mechanism or the braking device based on the information about the inside or outside of the vehicle obtained by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and output the control command to the driving system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of the advanced driver assistance system (ADAS), which includes collision avoidance or collision mitigation of the vehicle, following driving based on following distance, cruise control, vehicle collision warning, vehicle lane departure warning, etc.

[0325] In addition, the microcomputer 12051 can perform collaborative control intended for autonomous driving by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the outside or inside of the vehicle obtained by the outside information detection unit 12030 or the inside information detection unit 12040, so that the vehicle can travel autonomously without relying on the driver's operation.

[0326] In addition, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information about the exterior of the vehicle obtained by the exterior information detection unit 12030. For example, the microcomputer 12051 can perform cooperative control aimed at preventing glare by controlling the headlights to change from high beam to low beam, for example, based on the position of the preceding vehicle or the oncoming vehicle detected by the exterior information detection unit 12030.

[0327] The sound / image output unit 12052 transmits an output signal of at least one of sound and image to an output device capable of visually or auditorily notifying the occupants of the vehicle or the outside of the vehicle of the information. Fig.41 In the example of FIG. 1 , an audio speaker 12061, a display portion 12062, and a dashboard 12063 are shown as output devices. The display portion 12062 may include, for example, at least one of an in-vehicle display and a head-up display.

[0328] Fig.42 This is a diagram showing an example of the installation position of the camera unit 12031.

[0329] exist Fig.42 In the figure, the camera unit 12031 includes camera units 12101, 12102, 12103, 12104 and 12105.

[0330] The camera units 12101, 12102, 12103, 12104 and 12105 are, for example, arranged at positions on the front nose, rearview mirror, rear bumper and rear door of the vehicle 12100 and at positions on the upper part of the windshield inside the vehicle. The camera unit 12101 arranged at the front nose and the camera unit 12105 arranged at the upper part of the windshield inside the vehicle mainly obtain images of the front part of the vehicle 12100. The camera units 12102 and 12103 arranged at the rearview mirror mainly obtain images of the side of the vehicle 12100. The camera unit 12104 arranged at the rear bumper or rear door mainly obtains images of the rear part of the vehicle 12100. The camera unit 12105 arranged at the upper part of the windshield inside the vehicle is mainly used to detect vehicles ahead, pedestrians, obstacles, signals, traffic signs or lanes, etc.

[0331] By the way, Fig.42An example of the photographing range of the camera units 12101 to 12104 is shown. The photographing range 12111 indicates the photographing range of the camera unit 12101 provided at the front nose. The photographing ranges 12112 and 12113 respectively indicate the photographing ranges of the camera units 12102 and 12103 provided at the rearview mirror. The photographing range 12114 indicates the photographing range of the camera unit 12104 provided at the rear bumper or the rear door. For example, a bird's-eye view image of the vehicle 12100 viewed from above is obtained by superimposing the image data photographed by the camera units 12101 to 12104.

[0332] At least one of the imaging units 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

[0333] For example, the microcomputer 12051 can determine the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in the distance over time (relative speed relative to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, thereby extracting the nearest three-dimensional object that is particularly on the travel path of the vehicle 12100 and traveling at a predetermined speed (e.g., equal to or greater than 0 km / h) in the substantially same direction as the vehicle 12100 as the leading vehicle. In addition, the microcomputer 12051 can pre-set a following distance to be maintained ahead of the leading vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. Therefore, it is possible to perform cooperative control intended for autonomous driving, which allows the vehicle to travel autonomously without relying on the operation of the driver or the like.

[0334] For example, the microcomputer 12051 can classify the three-dimensional object data related to the three-dimensional object into three-dimensional object data of two-wheeled vehicles, standard vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on the distance information obtained from the camera units 12101 to 12104, extract the classified three-dimensional object data, and use the extracted three-dimensional object data to automatically avoid obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that can be visually recognized by the driver of the vehicle 12100 and obstacles that are difficult for the driver of the vehicle 12100 to visually recognize. Then, the microcomputer 12051 determines the collision risk representing the risk of collision with each obstacle. When the collision risk is equal to or greater than the set value and therefore there is a possibility of collision, the microcomputer 12051 outputs a warning to the driver via the audio speaker 12061 or the display unit 12062, and performs forced deceleration or evasive steering through the drive system control unit 12010. The microcomputer 12051 is thereby able to assist driving to avoid collisions.

[0335] At least one of the camera units 12101 to 12104 may be an infrared camera that detects infrared rays. The microcomputer 12051 may identify pedestrians, for example, by determining whether there are pedestrians in the images captured by the camera units 12101 to 12104. Such identification of pedestrians is performed, for example, by extracting feature points in the captured images of the camera units 12101 to 12104 as infrared cameras; and determining whether it is a pedestrian by pattern matching a series of feature points representing the outline of the object. When the microcomputer 12051 determines that there are pedestrians in the images captured by the camera units 12101 to 12104 and thus identifies the pedestrians, the sound / image output unit 12052 controls the display unit 12062 to display a square outline for emphasis so that it is superimposed on the identified pedestrian. The sound / image output unit 12052 may also control the display unit 12062 so that an icon representing a pedestrian or the like is displayed at a desired position.

[0336] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the camera unit 12031 in the above-mentioned configuration. Applying the technology according to the present disclosure to the camera unit 12031 makes it possible to obtain a captured image that is easier to view. The fatigue of the driver can be reduced.

[0337] <16. Other Modifications>

[0338] The present disclosure has been described above in conjunction with some embodiments, variations, and application examples or practical application examples thereof (hereinafter referred to as “embodiments, etc.”), but the present disclosure is not limited to the above-mentioned embodiments, etc., and can be modified in various ways. For example, the present disclosure is not limited to back-illuminated image sensors, but is also applicable to front-illuminated image sensors.

[0339] Furthermore, the imaging device of the present disclosure may have the form of a module in which an imaging section and a signal processor or an optical system are packaged together.

[0340] In addition, in the above-mentioned embodiments, etc., such a solid-state imaging device and an imaging element mounted to the solid-state imaging device are described as an example: in the solid-state imaging device, the light amount of incident light that forms an image on the imaging plane through the optical lens system is converted into an electrical signal pixel by pixel and the electrical signal is output as a pixel signal, however, the photoelectric conversion element of the present disclosure is not limited to such an imaging element. For example, it is sufficient as long as the photoelectric conversion element detects and receives light from an object, generates an electric charge corresponding to the amount of received light by photoelectric conversion, and accumulates the electric charge. The signal to be output may be a signal of image information or a signal of distance measurement information.

[0341] In addition, in the above-mentioned embodiments, the case where the photoelectric converter 10 as the second photoelectric converter is an iTOF sensor is described as an example, however, the present disclosure is not limited to this. That is, the second photoelectric converter is not limited to a photoelectric converter that detects light having a wavelength in the infrared light range, and may be a photoelectric converter that detects light having a wavelength in other wavelength ranges. In addition, in the case where the photoelectric converter 10 is not an iTOF sensor, only one transfer transistor (TG) may be provided.

[0342] In addition, in the above-mentioned embodiments, etc., a camera element in which a photoelectric converter 10 including a photoelectric conversion region 12 and an organic photoelectric converter 20 including an organic photoelectric conversion layer 22 are stacked via an intermediate layer 40 is described as an example of a photoelectric conversion element of the present disclosure, however, the present disclosure is not limited to this. For example, the photoelectric conversion element of the present disclosure may have a structure in which two organic photoelectric conversion regions are stacked or a structure in which two inorganic photoelectric conversion regions are stacked. In addition, in the above-mentioned embodiments, etc., the photoelectric converter 10 mainly detects light having a wavelength in the infrared light range and performs photoelectric conversion on the light, and the organic photoelectric converter 20 mainly detects light having a wavelength in the visible light range and performs photoelectric conversion on the light, however, the photoelectric conversion element of the present disclosure is not limited to this. In the photoelectric conversion element of the present disclosure, the wavelength range in which the first photoelectric converter and the second photoelectric converter have sensitivity can be freely set.

[0343] In addition, the constituent materials of the various components of the photoelectric conversion element of the present disclosure are not limited to the materials described in the above embodiments, etc. For example, when the first photoelectric converter or the second photoelectric converter receives light in the visible light region and performs photoelectric conversion on it, the first photoelectric converter or the second photoelectric converter may include quantum dots.

[0344] In addition, in the above-mentioned fifth embodiment, the inter-pixel area light shielding film 56 is provided between the organic photoelectric converter 20 and the on-chip lens 54 in the Z-axis direction, however, the inter-pixel area light shielding film 56 may be provided similarly in the above-mentioned embodiments and modified examples except the fifth embodiment.

[0345] In addition, in the above-mentioned embodiments and the like, a case where a pair of gate electrodes and a pair of charge holding portions are included corresponding to a second photoelectric conversion layer is described as an example, and the pair of charge holding portions respectively accumulate charges arriving from the second photoelectric conversion layer through a corresponding one of the pair of gate electrodes, however, the present disclosure is not limited to this. A gate electrode and a charge holding portion may be provided corresponding to a second photoelectric conversion layer. Alternatively, more than three gate electrodes and more than three charge holding portions may be provided corresponding to a second photoelectric conversion layer. In addition, in the present disclosure, the transistor for reading out the charge of the second photoelectric conversion layer is not limited to a so-called vertical transistor, but may also be a planar transistor.

[0346] According to the photoelectric conversion element as an embodiment of the present disclosure, for example, visible light image information with high image quality and infrared light image information including distance information can be obtained by the above-described configuration.

[0347] It should be noted that the effects described here are merely illustrative and non-limiting, and other effects may be provided. In addition, the present technology may have the following configurations. (1)

[0349] A photoelectric conversion element, comprising:

[0350] Semiconductor substrates;

[0351] a first photoelectric converter, the first photoelectric converter being disposed on the semiconductor substrate, the first photoelectric converter detecting light within a first wavelength range including a visible light range and performing photoelectric conversion on the light;

[0352] a second photoelectric converter provided in the semiconductor substrate at a position overlapping with the first photoelectric converter in a thickness direction of the semiconductor substrate, the second photoelectric converter detecting light within a second wavelength range including an infrared light range and performing photoelectric conversion on the light; and

[0353] an optical filter disposed on a side of the first photoelectric converter opposite to the second photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range,

[0354] The first photoelectric converter includes a stacked structure including a first electrode, a first photoelectric conversion layer, and a second electrode stacked in sequence, and the charge accumulation electrode is arranged to be separated from the first electrode and opposite to the first photoelectric conversion layer via an insulating layer. (2)

[0356] The photoelectric conversion element according to (1), wherein the second photoelectric converter is used to obtain distance information of an object. (3)

[0358] A photoelectric conversion element according to (1) or (2), wherein the second photoelectric converter includes a second photoelectric conversion layer, a pair of gate electrodes, and a pair of charge holding portions, each of which accumulates charges arriving from the second photoelectric conversion layer through a corresponding one of the pair of gate electrodes. (4)

[0360] The photoelectric conversion element according to any one of (1) to (3), wherein a plurality of the charge accumulation electrodes are provided corresponding to one second photoelectric converter. (5)

[0362] The photoelectric conversion element according to (4), wherein

[0363] One of the optical filters is provided corresponding to the one second photoelectric converter, and

[0364] One of the first photoelectric converters is provided corresponding to the one of the second photoelectric converters. (6)

[0366] The photoelectric conversion element according to any one of (1) to (5), wherein a plurality of the charge accumulation electrodes are provided corresponding to one first photoelectric converter. (7)

[0368] The photoelectric conversion element according to any one of (1) to (6) further includes an inter-pixel area light shielding film located on the incident side of the second photoelectric converter, the inter-pixel area light shielding film including a plurality of openings at positions corresponding to the second photoelectric converter. (8)

[0370] The photoelectric conversion element according to any one of (1) to (7), further including a through electrode that takes out the charge accumulated in the charge accumulation electrode to a side opposite to the second photoelectric converter as viewed from the first photoelectric converter. (9)

[0372] The photoelectric conversion element according to (8), further including a metal layer surrounding the through-electrode via an insulating layer. (10)

[0374] The photoelectric conversion element according to any one of (1) to (9), wherein

[0375] The semiconductor substrate has a first surface opposite to the first photoelectric converter and a second surface on a side opposite to the first surface, and

[0376] A concavo-convex structure is formed on at least one of the first surface and the second surface. (11)

[0378] The photoelectric conversion element according to any one of (1) to (10), wherein the stacked structure in the first photoelectric conversion layer further includes a semiconductor layer provided between the first electrode and the first photoelectric conversion layer. (12)

[0380] A photodetector is provided with a plurality of photoelectric conversion elements, each of which comprises:

[0381] Semiconductor substrates;

[0382] a first photoelectric converter, the first photoelectric converter being disposed on the semiconductor substrate, the first photoelectric converter detecting light within a first wavelength range including a visible light range and performing photoelectric conversion on the light;

[0383] a second photoelectric converter provided in the semiconductor substrate at a position overlapping with the first photoelectric converter in a thickness direction of the semiconductor substrate, the second photoelectric converter detecting light within a second wavelength range including an infrared light range and performing photoelectric conversion on the light; and

[0384] an optical filter disposed on a side of the first photoelectric converter opposite to the second photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range,

[0385] The first photoelectric converter includes a stacked structure including a first electrode, a first photoelectric conversion layer, and a second electrode stacked in sequence, and the charge accumulation electrode is arranged to be separated from the first electrode and opposite to the first photoelectric conversion layer via an insulating layer. (13)

[0387] The photodetector according to (12), further including a light shielding film located between the first photoelectric converter and the second photoelectric converter and provided in a region between the photoelectric conversion elements adjacent to each other. (14)

[0389] A light detection system is provided with a light emitting device emitting infrared light and a light detector including a photoelectric conversion element, wherein the photoelectric conversion element includes:

[0390] Semiconductor substrates;

[0391] a first photoelectric converter, the first photoelectric converter being disposed on the semiconductor substrate, the first photoelectric converter detecting visible light from outside and performing photoelectric conversion on the visible light;

[0392] a second photoelectric converter, the second photoelectric converter being provided in the semiconductor substrate at a position overlapping with the first photoelectric converter in a thickness direction of the semiconductor substrate, the second photoelectric converter detecting the infrared light from the light emitting device and performing photoelectric conversion on the infrared light; and

[0393] an optical filter disposed on a side of the first photoelectric converter opposite to the second photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range,

[0394] The first photoelectric converter includes a stacked structure including a first electrode, a first photoelectric conversion layer, and a second electrode stacked in sequence, and the charge accumulation electrode is arranged to be separated from the first electrode and opposite to the first photoelectric conversion layer via an insulating layer. (15)

[0396] An electronic device is provided with an optical part, a signal processor and a photoelectric conversion element, wherein the photoelectric conversion element comprises:

[0397] Semiconductor substrates;

[0398] a first photoelectric converter, the first photoelectric converter being disposed on the semiconductor substrate, the first photoelectric converter detecting light within a first wavelength range including a visible light range and performing photoelectric conversion on the light;

[0399] a second photoelectric converter provided in the semiconductor substrate at a position overlapping with the first photoelectric converter in a thickness direction of the semiconductor substrate, the second photoelectric converter detecting light within a second wavelength range including an infrared light range and performing photoelectric conversion on the light; and

[0400] an optical filter disposed on a side of the first photoelectric converter opposite to the second photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range,

[0401] The first photoelectric converter includes a stacked structure including a first electrode, a first photoelectric conversion layer, and a second electrode stacked in sequence, and the charge accumulation electrode is arranged to be separated from the first electrode and opposite to the first photoelectric conversion layer via an insulating layer. (16)

[0403] A mobile body provided with a light detection system, the light detection system comprising a light emitting device and a light detector, the light emitting device emitting a first light included in a visible light range and a second light included in an infrared light range, the light detector comprising a photoelectric conversion element, the photoelectric conversion element comprising:

[0404] Semiconductor substrates;

[0405] a first photoelectric converter, the first photoelectric converter being disposed on the semiconductor substrate, the first photoelectric converter detecting light within a first wavelength range including the first light and performing photoelectric conversion on the light;

[0406] a second photoelectric converter provided in the semiconductor substrate at a position overlapping with the first photoelectric converter in a thickness direction of the semiconductor substrate, the second photoelectric converter detecting light within a second wavelength range including the second light and performing photoelectric conversion on the light; and

[0407] an optical filter disposed on a side of the first photoelectric converter opposite to the second photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range,

[0408] The first photoelectric converter includes a stacked structure including a first electrode, a first photoelectric conversion layer, and a second electrode stacked in sequence, and the charge accumulation electrode is arranged to be separated from the first electrode and opposite to the first photoelectric conversion layer via an insulating layer. (17)

[0410] A photoelectric conversion element, comprising:

[0411] Semiconductor substrates;

[0412] a first photoelectric converter, the first photoelectric converter being disposed on the semiconductor substrate, the first photoelectric converter comprising a stacked structure including a first electrode, a first photoelectric conversion layer, and a second electrode stacked in sequence from the semiconductor substrate side, the first photoelectric converter detecting light within a first wavelength range and performing photoelectric conversion on the light;

[0413] a second photoelectric converter, the second photoelectric converter being disposed in the semiconductor substrate at a position overlapping with the first photoelectric converter in a thickness direction of the semiconductor substrate, the second photoelectric converter detecting light within a second wavelength range and performing photoelectric conversion on the light;

[0414] a through electrode electrically connected to the first electrode, the through electrode taking out the charges generated in the first photoelectric conversion layer to a side opposite to the semiconductor substrate as viewed from the first photoelectric converter; and

[0415] A metal layer surrounds the through electrode via an insulating layer. (18)

[0417] The photoelectric conversion element according to (17), wherein the metal layer is provided so as to surround the second photoelectric converter in a plane orthogonal to a stacking direction in which the stacked structure is stacked. (19)

[0419] An electronic device provided with a light detection system, the light detection system comprising a light emitting device and a light detector, the light emitting device emitting a first light included in a visible light range and a second light included in an infrared light range, the light detector comprising a photoelectric conversion element, the photoelectric conversion element comprising:

[0420] Semiconductor substrates;

[0421] a first photoelectric converter, the first photoelectric converter being disposed on the semiconductor substrate, the first photoelectric converter detecting light within a first wavelength range including the first light and performing photoelectric conversion on the light;

[0422] a second photoelectric converter provided in the semiconductor substrate at a position overlapping with the first photoelectric converter in a thickness direction of the semiconductor substrate, the second photoelectric converter detecting light within a second wavelength range including the second light and performing photoelectric conversion on the light; and

[0423] an optical filter disposed on a side of the first photoelectric converter opposite to the second photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range,

[0424] The first photoelectric converter includes a stacked structure including a first electrode, a first photoelectric conversion layer, and a second electrode stacked in sequence, and the charge accumulation electrode is arranged to be separated from the first electrode and opposite to the first photoelectric conversion layer via an insulating layer. (20)

[0426] An electronic device is provided with an optical part, a signal processor and a photoelectric conversion element, wherein the photoelectric conversion element comprises:

[0427] Semiconductor substrates;

[0428] a first photoelectric converter, the first photoelectric converter being disposed on the semiconductor substrate, the first photoelectric converter comprising a stacked structure including a first electrode, a first photoelectric conversion layer, and a second electrode stacked in sequence from the semiconductor substrate side, the first photoelectric converter detecting light within a first wavelength range and performing photoelectric conversion on the light;

[0429] a second photoelectric converter, the second photoelectric converter being disposed in the semiconductor substrate at a position overlapping with the first photoelectric converter in a thickness direction of the semiconductor substrate, the second photoelectric converter detecting light within a second wavelength range and performing photoelectric conversion on the light;

[0430] a through electrode electrically connected to the first electrode, the through electrode taking out the charges generated in the first photoelectric conversion layer to a side opposite to the semiconductor substrate as viewed from the first photoelectric converter; and

[0431] A metal layer surrounds the through electrode via an insulating layer.

[0432] This application claims the benefit of U.S. Provisional Patent Application No. 62 / 864,907, filed in the U.S. Patent and Trademark Office on June 21, 2019, the entire contents of which are incorporated herein by reference.

[0433] It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may be made according to design requirements and other factors within the scope of the appended claims or their equivalents.

Claims

1. A photoelectric conversion element, comprising: Semiconductor substrates; a first photoelectric converter, the first photoelectric converter being disposed above the semiconductor substrate, the first photoelectric converter detecting light within a first wavelength range including a visible light range and performing photoelectric conversion on the light; a second photoelectric converter, the second photoelectric converter being provided in the semiconductor substrate at a position overlapping with the first photoelectric converter in the thickness direction of the semiconductor substrate, the second photoelectric converter detecting light within a second wavelength range including an infrared light range and performing photoelectric conversion on the light; as well as an optical filter disposed above the first photoelectric converter and transmitting light of a predetermined color component included in a predetermined wavelength range, The first photoelectric converter includes a first electrode, a second electrode, and a third electrode, and a first photoelectric conversion layer is arranged between the first electrode and the third electrode and between the second electrode and the third electrode. The second photoelectric converter includes a first photoelectric conversion region, and The optical filter includes a first color filter and a second color filter, wherein the first color filter overlaps with the first electrode and the first photoelectric conversion region, the second color filter overlaps with the second electrode and the first photoelectric conversion region, and The first color filter is configured to allow light of a first predetermined color component to pass therethrough, and the second color filter is configured to allow light of a second predetermined color component to pass therethrough, the second predetermined color component being different from the first predetermined color component.

2. The photoelectric conversion element according to claim 1, wherein The second photoelectric converter is used to obtain distance information of the object.

3. The photoelectric conversion element according to claim 1 or 2, wherein: The second photoelectric converter includes the first photoelectric conversion region, a pair of gate electrodes, and a pair of charge holding portions, each of which accumulates charges arriving from the first photoelectric conversion region through a corresponding one of the pair of gate electrodes.

4. The photoelectric conversion element according to claim 1 or 2, wherein: A plurality of charge accumulation electrodes are provided corresponding to one of the second photoelectric converters, and the plurality of charge accumulation electrodes include the first electrode and the second electrode.

5. The photoelectric conversion element according to claim 1 or 2, wherein: A plurality of the first electrodes are provided corresponding to one first photoelectric converter. 6 . The photoelectric conversion element according to claim 1 , further comprising an inter-pixel area light shielding film located on a light incident side of the second photoelectric converter, the inter-pixel area light shielding film including a plurality of openings at positions corresponding to the second photoelectric converter. 7 . The photoelectric conversion element according to claim 4 , further comprising a through electrode which takes out the charge accumulated in the charge accumulation electrode to a side opposite to the second photoelectric converter as viewed from the first photoelectric converter. 8 . The photoelectric conversion element according to claim 7 , further comprising a metal layer surrounding the through electrode via an insulating layer.

9. The photoelectric conversion element according to claim 1 or 2, wherein: The semiconductor substrate has a first surface opposite to the first photoelectric converter and a second surface on a side opposite to the first surface, and A concavo-convex structure is formed on at least one of the first surface and the second surface.

10. The photoelectric conversion element according to claim 1 or 2, wherein The first photoelectric converter further includes a semiconductor layer provided between the first electrode and the first photoelectric conversion layer. 11 . A photodetector comprising a plurality of photoelectric conversion elements, wherein the photoelectric conversion elements are the photoelectric conversion elements according to claim 1 . 12 . The photodetector according to claim 11 , further comprising a light shielding film located between the first photoelectric converter and the second photoelectric converter and provided in a region between the photoelectric conversion elements adjacent to each other. 13 . A light detection system provided with a light emitting device that emits infrared light and a light detector including a photoelectric conversion element, wherein the photoelectric conversion element is the photoelectric conversion element according to any one of claims 1 to 10. 14 . An electronic device comprising an optical section, a signal processor, and a photoelectric conversion element, wherein the photoelectric conversion element is the photoelectric conversion element according to claim 1 .

15. A mobile body provided with a light detection system, wherein the light detection system includes a light emitting device and a light detector, wherein the light emitting device emits a first light included in a visible light range and a second light included in an infrared light range, and the light detector includes a photoelectric conversion element, and the photoelectric conversion element is a photoelectric conversion element according to any one of claims 1 to 10.

16. A photoelectric conversion element, comprising: Semiconductor substrates; a first photoelectric converter, the first photoelectric converter is arranged above the semiconductor substrate, the first photoelectric converter includes a first electrode, a second electrode and a third electrode, a first photoelectric conversion layer is arranged between the first electrode and the third electrode and between the second electrode and the third electrode, and the first photoelectric converter detects light within a first wavelength range and performs photoelectric conversion on the light; a second photoelectric converter, the second photoelectric converter being disposed in the semiconductor substrate at a position overlapping with the first photoelectric converter in a thickness direction of the semiconductor substrate, the second photoelectric converter detecting light within a second wavelength range and performing photoelectric conversion on the light; a through electrode that takes out charges generated in the first photoelectric conversion layer to a side opposite to the semiconductor substrate when viewed from the first photoelectric converter; and a metal layer, the metal layer surrounding the through electrode via an insulating layer, The second photoelectric converter includes a first photoelectric conversion region, Wherein, the first color filter and the second color filter are arranged above the first photoelectric converter, The first color filter overlaps the first electrode and the first photoelectric conversion region, the second color filter overlaps the second electrode and the first photoelectric conversion region, and The first color filter is configured to allow light of a first predetermined color component to pass therethrough, and the second color filter is configured to allow light of a second predetermined color component to pass therethrough, the second predetermined color component being different from the first predetermined color component.

17. The photoelectric conversion element according to claim 16, wherein The metal layer is provided to surround the second photoelectric converter in a plane orthogonal to a thickness direction of the semiconductor substrate.

18. An electronic device provided with a light detection system, the light detection system comprising a light emitting device and a light detector, the light emitting device emitting a first light included in a visible light range and a second light included in an infrared light range, the light detector comprising a photoelectric conversion element, and the photoelectric conversion element is a photoelectric conversion element according to any one of claims 1 to 10.

19. An electronic device, comprising an optical unit, a signal processor and a photoelectric conversion element, wherein the photoelectric conversion element comprises: Semiconductor substrates; a first photoelectric converter, the first photoelectric converter is arranged above the semiconductor substrate, the first photoelectric converter includes a first electrode, a second electrode and a third electrode, a first photoelectric conversion layer is arranged between the first electrode and the third electrode and between the second electrode and the third electrode, and the first photoelectric converter detects light within a first wavelength range and performs photoelectric conversion on the light; a second photoelectric converter, the second photoelectric converter being disposed in the semiconductor substrate at a position overlapping with the first photoelectric converter in a thickness direction of the semiconductor substrate, the second photoelectric converter detecting light within a second wavelength range and performing photoelectric conversion on the light; a through electrode that takes out charges generated in the first photoelectric conversion layer to a side opposite to the semiconductor substrate when viewed from the first photoelectric converter; and a metal layer, the metal layer surrounding the through electrode via an insulating layer, The second photoelectric converter includes a first photoelectric conversion region, Wherein, the first color filter and the second color filter are arranged above the first photoelectric converter, The first color filter overlaps the first electrode and the first photoelectric conversion region, the second color filter overlaps the second electrode and the first photoelectric conversion region, and The first color filter is configured to allow light of a first predetermined color component to pass therethrough, and the second color filter is configured to allow light of a second predetermined color component to pass therethrough, the second predetermined color component being different from the first predetermined color component.

Images