Electronic device and method for manufacturing an electronic device

Abstract

Provided is an electronic device having high degrees of freedom in design and manufacturing processes. The electronic device has: an array substrate having a first electrode and a second electrode; a first connecting member provided on the first electrode; a first LED chip mounted on the first connecting member; a second connecting member provided on the second electrode and thicker than the first connecting member; and a second LED chip mounted on the second connecting member. A distance from a reference surface of the array substrate to an upper surface of the second connecting member is greater than a distance from the reference surface to an upper surface of the first connecting member.

Description

Technical Field

[0001] One embodiment of the present invention relates to an electronic device and a method for manufacturing the electronic device. In particular, one embodiment of the present invention relates to a display device as an electronic device in which electronic components including LED chips are mounted, and a method for manufacturing the display device. Background Technology

[0002] In small and medium-sized display devices such as smartphones, displays using liquid crystal displays (LCDs) or organic light-emitting diodes (OLEDs) have been commercialized. In particular, OLED displays, which use OLEDs as self-emissive elements, offer advantages over LCD displays, including higher contrast and the elimination of the need for backlighting. However, because OLEDs are composed of organic compounds, the degradation of these organic compounds makes it difficult to ensure high reliability for OLED displays.

[0003] In recent years, the development of so-called microLED display devices (or mini-LED display devices), which incorporate tiny LED chips within the pixel circuitry of a circuit board, has been progressing as a next-generation display device (e.g., Japanese Patent Publication No. 2018-508972). LEDs are self-emissive elements similar to OLEDs, but unlike OLEDs, they are composed of inorganic compounds containing gallium (Ga) and indium (In). Therefore, compared to OLED display devices, microLED display devices are easier to ensure high reliability. Furthermore, LED chips offer higher luminous efficiency and brightness compared to OLED display devices. Consequently, microLED display devices are anticipated as a next-generation display device offering high reliability, high brightness, and high contrast.

[0004] The manufacturing method of a micro-LED display device differs from that of an OLED display device, including a step of mounting LED chips. In each pixel, a connecting member for mounting LED chips is provided on the pixel electrode. The LED chip is electrically connected to the pixel electrode via the connecting member and is fixed to the pixel electrode. In a micro-LED display device, LED chips emitting the same color are mounted. That is, for example, a red LED chip is first mounted in a pixel area, followed by a green LED chip in the same area. The distance between the red and green LED chips in adjacent pixels is very short. Therefore, for example, if a green LED chip is mounted in an adjacent area after a red LED chip has been mounted, there is a possibility that the member used to mount the green LED chip may interfere with the already mounted red LED chip. To avoid this interference, Japanese Patent Application Publication No. 2018-508972 discloses a technique for adjusting the thickness of the connecting pads connected to the step shape or conductive adhesive structure of the substrate (array substrate) according to the pixel.

[0005] However, the technology disclosed in Japanese Patent Application Publication No. 2018-508972 only allows adjustment of the step shape or the thickness of the connecting pads within a predetermined pixel size. That is, the step shape or the thickness of the connecting pads needs to be adjusted during the display device design stage or the array substrate manufacturing stage. Therefore, there is a problem of limited freedom in the manufacturing processes after the array substrate is formed.

[0006] For example, if defects such as bright spots or dark spots are identified after manufacturing a micro-LED display device, these defects can be repaired by replacing the LED chips installed in the pixels with the identified defects. When installing new LED chips in the pixels to be repaired, it is necessary to avoid interference with the LED chips located in surrounding pixels. According to Japanese Patent Publication No. 2018-508972, due to the limited degree of freedom in the manufacturing processes after the array substrate is formed, it is impossible to handle such situations. Summary of the Invention

[0007] In view of the above-mentioned problems, one of the objectives of this invention is to provide electronic devices with a high degree of freedom in design and manufacturing methods.

[0008] Methods used to solve problems

[0009] An electronic device according to one embodiment of the present invention includes: an array substrate having a first electrode and a second electrode; a first connecting member disposed on the first electrode; a first LED chip mounted on the first connecting member; a second connecting member disposed on the second electrode and being thicker than the first connecting member; and a second LED chip mounted on the second connecting member. The distance from a reference surface of the array substrate to the upper surface of the second connecting member is greater than the distance from the reference surface to the upper surface of the first connecting member.

[0010] A method for manufacturing an electronic device according to an embodiment of the present invention includes forming an array substrate comprising a first electrode and a second electrode, forming a first connection member on the first electrode, forming a second connection member on the second electrode that is thicker than the first connection member such that the distance from a reference surface of the array substrate to the upper surface of the second connection member is greater than the distance from the reference surface to the upper surface of the first connection member, mounting a first LED chip on the first connection member, and mounting a second LED chip on the second connection member.

[0011] A method for manufacturing an electronic device according to one embodiment of the present invention includes forming an array substrate comprising a first electrode and a second electrode, forming a first connection member on the first electrode, forming a second connection member on the second electrode, mounting a first LED chip on the first connection member, mounting a second LED chip on the second connection member, removing the second LED chip from the second electrode, forming a repair connection member on the second electrode that is thicker than the first connection member such that the distance from the reference surface of the array substrate to the upper surface of the repair connection member is greater than the distance from the reference surface to the upper surface of the first connection member, and forming a repair LED chip that emits light in the same color as the second LED chip on the repair connection member.

[0012] An electronic device according to one embodiment of the present invention includes: an array substrate having a first electrode and a second electrode; a first connecting member disposed on the first electrode; a first electronic component mounted on the first connecting member; a second connecting member disposed on the second electrode and being thicker than the first connecting member; and a second electronic component mounted on the second connecting member. The distance from a reference plane of the array substrate to the upper surface of the second connecting member is greater than the distance from the reference plane to the upper surface of the first connecting member. Attached Figure Description

[0013] Figure 1 This is a schematic cross-sectional view illustrating a display device according to an embodiment of the present invention.

[0014] Figure 2 This is a cross-sectional view showing a method for manufacturing a display device according to an embodiment of the present invention.

[0015] Figure 3 This is a cross-sectional view showing a method for manufacturing a display device according to an embodiment of the present invention.

[0016] Figure 4 This is a cross-sectional view showing a method for manufacturing a display device according to an embodiment of the present invention.

[0017] Figure 5 This is a cross-sectional view showing a method for manufacturing a display device according to an embodiment of the present invention.

[0018] Figure 6 This is a cross-sectional view showing a method for manufacturing a display device according to an embodiment of the present invention.

[0019] Figure 7 This is a cross-sectional view showing a repair method for a display device according to an embodiment of the present invention.

[0020] Figure 8 This is a cross-sectional view showing a repair method for a display device according to an embodiment of the present invention.

[0021] Figure 9 is a sectional view showing a repair method of a display device of one embodiment of the present application.

[0022] Figure 10A is a sectional view showing a repair method of a display device of one embodiment of the present application.

[0023] Figure 10B is a schematic sectional view of a display device of one embodiment of the present application to which a repair is applied.

[0024] Figure 11 is a plan view showing the overall structure of a display device of one embodiment of the present application.

[0025] Figure 12 is a block diagram showing the circuit structure of a display device of one embodiment of the present application.

[0026] Figure 13 is a circuit diagram of a pixel circuit of a display device of one embodiment of the present application.

[0027] Figure 14 is a sectional view of a display device of one embodiment of the present application.

[0028] BRIEF DESCRIPTION OF DRAWINGS

[0029] 10: display device; 22B: display region; 24B: peripheral region; 26B: terminal region; 100: array substrate; 101: first face; 103: second face; 105B: third face; 109: reference face; 110B: pixel circuit; 120: insulating layer; 190: pixel electrode; 191: first pixel electrode; 193: second pixel electrode; 195: third pixel electrode; 200: LED chip; 201: first LED chip; 203: second LED chip; 205: third LED chip; 207A: repair LED chip; 250: connecting member; 251: first connecting member; 253: second connecting member; 255: third connecting member; 260A: connecting member; 261A: first connecting member; 263A: second connecting member; 265A: third connecting member; 270A: repair connecting member; 300B: transistor; 305B: insulating substrate; 310B: base layer; 320B: semiconductor layer; 330B: gate insulating layer; 340B: gate electrode; 350B: insulating layer; 400B: wiring portion; 402B, 403B, 406B, 410B, 411B, 414B, 416B, 420B: conductive layer; 404B, 418B: planarization layer; 408B: insulating layer; 422B, 424B, 426B, 428B, 430B: opening; 480B: first region; 490B: second region; 520B: source drive circuit; 521B: source wiring; 530B: gate drive circuit; 531B: gate wiring; 533B: terminal portion; 541B: connecting wiring; 600B: flexible printed circuit substrate; 700B: IC chip; 960B: drive transistor; 961B: anode power supply line; 963B: cathode power supply line; 970B: selection transistor; 971B: signal line; 973B: gate line; 980B: holding capacitor. DETAILED DESCRIPTION

[0030] Embodiments of the present application will be described below with reference to the accompanying drawings. The following disclosure is merely an example. Those skilled in the art can easily conceive of structures by appropriately changing the structures of the embodiments while maintaining the gist of the application. The structures are of course included in the scope of the present application. The drawings schematically show the width, thickness, shape, and the like of each portion in order to make the description clearer. However, the illustrated shapes are merely examples and do not limit the explanation of the present application. In the present specification and each drawing, the same elements as those described with respect to the preceding drawing are sometimes given a letter after the same reference numeral and detailed description is appropriately omitted.

[0031] In each embodiment of the present application, the direction from the array substrate toward the LED chip is referred to as upward or above. In contrast, the direction from the LED chip toward the array substrate is referred to as downward or below. Thus, the description is made using the expressions upward or downward for the convenience of explanation, but for example, the display device can also be configured such that the upward and downward relationship of the array substrate and the LED chip is opposite to the illustration. In the following description, for example, the expression LED chip on the array substrate is only to describe the upward and downward relationship of the array substrate and the LED chip as described above, and other components can also be provided between the array substrate and the LED chip. The upward or downward refers to the stacking order in a configuration in which a plurality of layers are stacked, and in the case of the pixel electrode being above the transistor, it can also be a positional relationship in which the transistor and the pixel electrode do not overlap in a plan view. On the other hand, in the case of the pixel electrode being vertically above the transistor, it refers to a positional relationship in which the transistor and the pixel electrode overlap in a plan view.

[0032] In the present specification, with respect to the expressions "α includes A, B, or C", "α includes some of A, B, and C", "α includes one selected from the group consisting of A, B, and C", unless specifically indicated, the case where α includes a plurality of combinations of A to C is not excluded. Furthermore, these expressions do not exclude the case where α includes other elements.

[0033] Each of the following embodiments can be combined with each other as long as there is no technical contradiction.

[0034] In the following embodiments, a display device in which an LED chip is mounted is described as an example, but the embodiments of the present application are not limited to the display device. For example, the embodiments of the present application can also be applied to an electronic device in which a light sensor or other electronic component is provided instead of or in addition to the LED chip. In the following description, the first LED chip, the second LED chip, and the third LED chip are examples of the first electronic component, the second electronic component, and the third electronic component to which the present embodiment can be applied. The first to third electronic components can be light sensors that sense different colors, can be sensors that differ in function from each other, or can be sensors and electronic components other than sensors.

[0035] <First Embodiment>

[0036] [Structure of Display Device 10]

[0037] By using Figure 1 A display device 10 of one embodiment of the present application will be described. In Figure 1 , a partial pixel structure of the display device 10 is illustrated. Figure 1 is a schematic cross-sectional view of a display device of one embodiment of the present application. As Figure 1As shown, the display device 10 includes an array substrate 100, a connecting member 250, and an LED chip 200. The array substrate 100 has a first surface 101 and a second surface 103. The first surface 101 and the second surface 103 are opposite sides. The array substrate 100 has a reference surface 109. In this embodiment, the reference surface 109 is an insulating substrate (e.g., an insulating substrate included in the array substrate 100) Figure 14 The reference surface 109 is the surface (upper surface) of the insulating substrate 305B. However, the reference surface 109 can also be the back surface (lower surface) of the insulating substrate. The reference surface 109 can be an actual flat surface, such as the upper or lower surface of the insulating substrate, or it can be a flat imaginary plane defined in the array substrate 100.

[0038] The array substrate 100 has an insulating layer 120 and a pixel electrode 190 on its first surface 101. The pixel electrode 190 is connected to the insulating layer 120. The pixel electrode 190 is disposed in the pixel circuit (corresponding to...). Figure 11 Part of the wiring of the pixel circuit 110B, details of which will be described later. That is, although in Figure 1 Although not illustrated, the array substrate 100 includes transistors and wiring disposed on an insulating substrate. The pixel electrode 190 includes a first pixel electrode 191, a second pixel electrode 193, and a third pixel electrode 195. The first pixel electrode 191, the second pixel electrode 193, and the third pixel electrode 195 are in contact with the same insulating layer 120 and have the same thickness. That is, the first pixel electrode 191, the second pixel electrode 193, and the third pixel electrode 195 are on the same layer. "Same layer" means that multiple components are formed by patterning a single layer. In other words, the expression that the first pixel electrode 191, the second pixel electrode 193, and the third pixel electrode 195 have the same thickness means that the thickness of these pixel electrodes is within the film thickness deviation range of the substrate layer that forms the basis of these pixel electrodes. That is, the expression that these pixel electrodes have the same thickness does not require that the thicknesses of these pixel electrodes are necessarily completely identical. When it is not necessary to specifically distinguish these pixel electrodes, they are collectively referred to as pixel electrode 190.

[0039] A connecting member 250 is provided on the pixel electrode 190. The connecting member 250 connects the pixel electrode 190 to the LED chip 200. The connecting member 250 includes a first connecting member 251, a second connecting member 253, and a third connecting member 255. The first connecting member 251 is disposed on the first pixel electrode 191. The second connecting member 253 is disposed on the second pixel electrode 193. The third connecting member 255 is disposed on the third pixel electrode 195. Unless otherwise specified, these three connecting members are collectively referred to as connecting member 250.

[0040] The second connection member 253 is thicker than the first connection member 251. The third connection member 255 is thicker than both the first connection member 251 and the second connection member 253. The difference between the thickness of the second connection member 253 and the thickness of the first connection member 251 exceeds the range of the thickness variation of each connection member. For example, in a case where the standard deviation of the thickness of the plurality of second connection members 253 provided on the array substrate 100 is assumed to be σ2, and the standard deviation of the thickness of the plurality of first connection members 251 is assumed to be σ1, the range indicated by ±3σ2 does not overlap with the range indicated by ±3σ1. Specifically, the second connection member 253 is thicker than the first connection member 251 by 300 nm or more, 500 nm or more, 1 μm or more, or 2 μm or more. Similarly, the difference between the thickness of the third connection member 255 and the thickness of the second connection member 253 exceeds the range of the thickness variation of each connection member. For example, in a case where the standard deviation of the thickness of the plurality of third connection members 255 is assumed to be σ3, the range indicated by ±3σ3 does not overlap with the range indicated by ±3σ2. Specifically, the third connection member 255 is thicker than the second connection member 253 by 300 nm or more, 500 nm or more, 1 μm or more, or 2 μm or more.

[0041] The distance from the reference surface 109 to the upper surface of the second connection member 253 is greater than the distance from the reference surface 109 to the upper surface of the first connection member 251. In other words, in the up-down direction (or the vertical direction), the position of the upper surface of the second connection member 253 is higher than the position of the upper surface of the first connection member 251. The distance from the reference surface 109 to the upper surface of the third connection member 255 is greater than the distance from the reference surface 109 to the upper surface of the second connection member 253. In other words, in the up-down direction, the position of the upper surface of the third connection member 255 is higher than the position of the upper surface of the second connection member 253.

[0042] The LED chip 200 is mounted on the connection member 250. The LED chip 200 includes a first LED chip 201, a second LED chip 203, and a third LED chip 205. The first LED chip 201 is mounted on the first connection member 251. The second LED chip 203 is mounted on the second connection member 253. The third LED chip 205 is mounted on the third connection member 255. The three LED chips emit light in different colors. However, the LED chips can also emit light in the same color. In a case where the above three LED chips are not particularly distinguished, they are collectively referred to as the LED chip 200.

[0043] The distance from the reference surface 109 to the contact surface (or contact point) between the second connecting member 253 and the second LED chip 203 is greater than the distance from the reference surface 109 to the contact surface (or contact point) between the first connecting member 251 and the first LED chip 201. In other words, the distance from the reference surface 109 to the lower surface of the second LED chip 203 is greater than the distance from the reference surface 109 to the lower surface of the first LED chip 201.

[0044] In this embodiment, an anode electrode is provided at the lower part of the LED chip 200, and a cathode electrode is provided at the upper part of the LED chip 200. The anode electrode of the LED chip 200 is connected to the connecting member 250. Although in Figure 1 Although not explicitly stated, the cathode electrode of the LED chip 200 and the conductive layer disposed above the cathode electrode (e.g., conductive layer 420B described later) are... Figure 14 The LED chip 200 emits light through a current flowing from the anode electrode toward the cathode electrode. In this embodiment, the LED chip 200 emits light upwards. A reflective member is provided on the sidewall of the LED chip 200. The reflective member is inclined upwards with its inclined surface facing upwards, reflecting the light emitted laterally from the light-emitting portion of the LED chip 200 upwards. The pixel electrode 190 functions as a reflective member, reflecting the light emitted from the LED chip 200 toward the array substrate 100 upwards. The LED chip 200 is not limited to the above-described structure and may also be constructed without a reflective member on the sidewall. The LED chip 200 may also be a flip-chip LED chip with an anode electrode and a cathode electrode at the bottom.

[0045] [Materials of the components of the display device 10]

[0046] As an insulating substrate of the array substrate 100 (e.g. Figure 14 The insulating substrate 305B can be a transparent substrate such as a glass substrate, quartz substrate, or plastic substrate (resin substrate). As a plastic substrate, a flexible substrate such as a polyimide substrate, acrylic substrate, siloxane substrate, or fluororesin substrate can be used. When a conductive substrate is used for the array substrate 100, a metal substrate such as a stainless steel substrate or an aluminum substrate can be used. When a conductive substrate is used for the array substrate 100, an insulating layer can be formed on the surface of the conductive substrate. In addition to the aforementioned insulating and conductive substrates, semiconductor substrates such as silicon substrates, silicon carbide substrates, and compound semiconductor substrates can also be used for the array substrate 100.

[0047] The pixel electrode 190 functions as a pad for forming a connection member 250 for mounting the LED chip 200. As the pixel electrode 190, for example, aluminum (Al), titanium (Ti), tin (Sn), chromium (Cr), cobalt (Co), nickel (Ni), molybdenum (Mo), hafnium (Hf), tantalum (Ta), tungsten (W), bismuth (Bi), silver (Ag), copper (Cu), platinum (Pt), gold (Au), or an alloy or a compound thereof is used. As the pixel electrode 190, the above-described material can be used in a single layer or can be used in a stacked layer. In a case where the LED chip 200 emits light downward, a transparent conductive film can be used as the pixel electrode 190. As the transparent conductive film, indium tin oxide (ITO) and indium zinc oxide (IZO) can be used.

[0048] The connection member 250 functions as a connection member for mounting the LED chip 200 to the pixel electrode 190. As the connection member 250, for example, a silver paste, a solder (Sn), a paste containing metal nanoparticles, or an anisotropic conductive film (ACF) can be used. For example, in a case where the paste containing metal nanoparticles is used as the connection member 250, not only after application but also after firing, the connection member 250 contains an organic substance. On the other hand, the pixel electrode 190 does not contain an organic substance. Even if it is assumed that the pixel electrode 190 contains an organic substance as an impurity, the amount of the organic substance contained in the connection member 250 is larger than the amount of the organic substance contained in the pixel electrode 190. However, the amount of the organic substance contained in the pixel electrode 190 can be the same as the amount of the organic substance contained in the connection member 250.

[0049] As the insulating layer 120, an organic insulating material such as a polyimide resin, an acrylic resin, an epoxy resin, a silicone resin, a fluorine resin, or a siloxane resin can be used. As the insulating layer 120, not only an organic insulating material but also an inorganic insulating material can be used. As the inorganic insulating material, a silicon oxide (SiO x ), a silicon oxynitride (SiO x N y ), a silicon nitride (SiN x ), a silicon nitride oxide (SiN x O y ), an aluminum oxide (AlO x ), an aluminum oxynitride (AlO x N y ), an aluminum nitride oxide (AlN x O y ), or an aluminum nitride (AlN x ) or the like can be used. SiO x N y , AlO x N ySiN x O y SiN x O y SiN

[0050] [Manufacturing method of display device 10]

[0051] By using Figures 2-6 A manufacturing method of display device 10 will be described. Figures 2-6 is a sectional view showing the manufacturing method of the display device according to an embodiment of the present application.

[0052] As Figure 2 shown, the first pixel electrode 191, the second pixel electrode 193, and the third pixel electrode 195 are formed on the first surface 101 side of the array substrate 100 so as to be in contact with the insulating layer 120. A conductive layer that serves as a base of the pixel electrode 190 is formed on the entire surface of the effective area (an area in which a functional element or a wiring is formed) of the array substrate 100, and the pixel electrode 190 is formed by patterning the conductive layer by a photolithography process. As described above, the first pixel electrode 191, the second pixel electrode 193, and the third pixel electrode 195 are formed by patterning the same conductive layer. Thus, the film thickness of each pixel electrode is substantially the same within a range of variation in the surface of the conductive layer formed on the entire surface.

[0053] As a film formation method of the conductive layer that serves as a base of the pixel electrode 190, a physical vapor deposition method (PVD method) is used. However, as the film formation method, a chemical vapor deposition method (CVD method) can also be used. As the PVD method, a sputtering method, a vacuum evaporation method, an electron beam evaporation method, or the like is used. As the CVD method, a thermal CVD method, a plasma CVD method, a catalytic CVD method (Cat-CVD method or hot wire CVD method), or the like is used.

[0054] As Figure 3As shown, a first connecting member 251 is formed on the first pixel electrode 191, a second connecting member 253 is formed on the second pixel electrode 193, and a third connecting member 255 is formed on the third pixel electrode 195. The first connecting member 251, the second connecting member 253, and the third connecting member 255 are each formed with a different thickness. Specifically, the second connecting member 253 is thicker than the first connecting member 251, and the third connecting member 255 is thicker than the second connecting member 253. The first connecting member 251, the second connecting member 253, and the third connecting member 255 are formed as follows: the distance from the reference surface 109 to the upper surface of the second connecting member 253 is greater than the distance from the reference surface 109 to the upper surface of the first connecting member 251. The distance from the reference surface 109 to the upper surface of the third connecting member 255 is greater than the distance from the reference surface 109 to the upper surface of the second connecting member 253. These connecting parts 250 can be formed using micro-dispensing, inkjet printing, dot transfer printing, mask evaporation, mask sputtering, ACF (Anisotropic Conductive Film) / NCF (Non-Conductive Film) bonding, plating, or printing.

[0055] like Figure 4 As shown, a first LED chip 201 is mounted on the first connecting member 251. For example, if the first LED chip 201 is a red LED chip, the first LED chip 201 is mounted in a plurality of red pixels disposed on the entire surface of the array substrate 100.

[0056] Next, as Figure 5 As shown, a second LED chip 203 is mounted on the second connecting member 253. For example, if the second LED chip 203 is a green LED chip, it is mounted among a plurality of green pixels disposed on the entire surface of the array substrate 100. In this case, since the second connecting member 253 is thicker than the first connecting member 251, when the second LED chip 203 is in contact with the second connecting member 253, the upper surface of the second LED chip 203 is higher than the upper surface of the first LED chip 201. Therefore, interference with the first LED chip 201 can be avoided when mounting the second LED chip 203.

[0057] Next, as Figure 6The third LED chip 205 is mounted on the third connection member 255. For example, in the case where the third LED chip 205 is a blue LED chip, the third LED chip 205 is mounted in a plurality of blue pixels arranged on the entire surface of the array substrate 100. In this case, since the third connection member 255 is thicker than the first and second connection members 251 and 253, the upper surface of the third LED chip 205 is higher than the upper surfaces of the first and second LED chips 201 and 203 in a state where the third LED chip 205 is in contact with the third connection member 255. Thus, interference with the first and second LED chips 201 and 203 can be avoided when the third LED chip 205 is mounted.

[0058] As described above, according to the display device 10 of the present embodiment, the thicknesses of the connection members are different, so that interference with other LED chips already mounted around can be avoided when an LED chip is mounted. Since the thicknesses of the connection members 250 can be adjusted in a process of forming the connection members 250 after the array substrate 100 is formed, the degree of freedom in design and manufacturing method of the process after the array substrate 100 is formed is improved.

[0059] <Second Embodiment>

[0060] By using Figures 7-10B A display device 10A according to an embodiment of the present application and a manufacturing method thereof will be described. In the present embodiment, a method of repairing an LED chip of a pixel in which a defect is found after the display device 10A is manufactured will be described. Figure 7 FIG. 10 is a cross-sectional view showing a repair method of a display device according to an embodiment of the present application. In the following description of the display device 10A, the same features as those of the display device 10 according to the first embodiment described in Figures 1-6 described in the first embodiment will be omitted, and mainly the points different from the display device 10 will be described.

[0061] [Manufacturing method of display device 10A]

[0062] As described above, according to the display device 10A of the present embodiment, the thicknesses of the connection members are different, so that interference with other LED chips already mounted around can be avoided when an LED chip is mounted. Since the thicknesses of the connection members 250 can be adjusted in a process of forming the connection members 250 after the array substrate 100 is formed, the degree of freedom in design and manufacturing method of the process after the array substrate 100 is formed is improved. Figure 7As shown, a first LED chip 201A is mounted on the first pixel electrode 191A, separated by a first connecting member 261A. A second LED chip 203A is mounted on the second pixel electrode 193A, separated by a second connecting member 263A. A third LED chip 205A is mounted on the third pixel electrode 195A, separated by a third connecting member 265A. Unless otherwise specified, these three connecting members are collectively referred to as connecting member 260A. In this embodiment, the first connecting member 261A, the second connecting member 263A, and the third connecting member 265A each have the same thickness. In this embodiment, the case where the second LED chip 203A is not emitting light and requires repair will be described.

[0063] like Figure 8 As shown, the second LED chip 203A is removed from the second pixel electrode 193A by pulling it upwards. Figure 8 In this example, the second connecting component 263A is stripped from the second pixel electrode 193A along with the second LED chip 203A. However, this is only one example; the second connecting component 263A can also remain on the second pixel electrode 193A.

[0064] like Figure 9 As shown, a repair connection member 270A is formed on the second pixel electrode 193A after the second LED chip 203A has been removed. The repair connection member 270A is thicker than the first connection member 261A, the second connection member 263A, and the third connection member 265A. The repair connection member 270A is formed such that the distance from the reference surface 109A to the upper surface of the repair connection member 270A is greater than the distance from the reference surface 109A to the upper surface of the first connection member 261A (or the third connection member 265A). Furthermore, a repair LED chip 207A is mounted on the repair connection member 270A. The repair LED chip 207A is an LED chip that emits the color that would be obtained if the second LED chip 203A were to emit light normally.

[0065] By performing the repair work as described above, the second LED chip 203A, which had a light emission defect, was replaced with a repaired LED chip 207A. Figure 10A The display device 10A shown is complete.

[0066] As described above, in the display device 10A according to this embodiment, the repair connection member 270A is thicker than the surrounding connection members, thereby avoiding interference with other LED chips already installed around it when installing the repair LED chip 207A.

[0067] In this embodiment, a structure is illustrated where the multiple connecting parts 260A have the same thickness before repair, but the embodiment is not limited to this structure. For example, similar to the first embodiment, the thicknesses of the multiple connecting parts before repair may also be different. In this case, the thickness of the repaired LED chip 207A is preferably greater than the difference between the thickest and thinnest connecting parts. Alternatively, instead of forming the repair connecting part 270A on the second pixel electrode 193A to form a part corresponding to the repair connecting part 270A on the lower surface of the repaired LED chip 207A, the repaired LED chip 207A may be formed on the second pixel electrode 193A.

[0068] The following explains the relationship with Figure 1 The first embodiment shown also includes a display device 10 with a first LED chip 201 as a red LED chip, a second LED chip 203 as a green LED chip, and a third LED chip 205 as a blue LED chip, which has undergone the above-described repair. In this case, the thickness of the connecting parts 251, 253, and 255 varies according to the emission color of each LED. When repairing such a display device 10, the thickness of the repair connecting part 270A is greater than that of the thickest connecting part among the connecting parts 251, 253, and 255 (in... Figure 10B In the example, the connecting part is 255). Figure 10B The example shown is that, in a certain pixel, the first LED chip 201 is repaired, and a repair LED chip 207A is configured in place of the first LED chip 201, separated by the repair connection component 270A. Sometimes... Figure 10B The repair LED chip 207A is referred to as the 4th LED chip (or 4th electronic component). Sometimes the repair connector 270A is referred to as the 4th connector.

[0069] Figure 10B The repair LED chip 207A is red. As described above, when repairing the display device 10, which has three connecting parts 251, 253, and 255 of different thicknesses, such as... Figure 10B As shown, the structure comprises four connecting parts (connecting parts 251, 253, 255 and repair connecting part 270A) with different thicknesses. When repairing each color of the LED, three repair connecting parts (red repair connecting part, green repair connecting part and blue repair connecting part) with different thicknesses can also be provided. In this case, the display device 10 comprises six connecting parts (connecting parts 251, 253, 255, red repair connecting part, green repair connecting part and blue repair connecting part) with different thicknesses. That is, a structure is obtained where connecting parts of different heights are provided for LEDs of the same color.

[0070] <Embodiment 3>

[0071] Utilizing Figures 11-14 The overall structure of a display device according to an embodiment of the present application is described. The display device 20B shown in the following embodiment can be manufactured by applying the manufacturing method of the display device 10 according to Embodiment 1 and the repair method of the display device 10A according to Embodiment 2.

[0072] [Outline of display device 20B]

[0073] Figure 11 is a plan view showing the overall structure of a display device according to an embodiment of the present application. As shown in Figure 11 , the display device 20B has an array substrate 100B, a flexible printed circuit substrate 600B (FPC 600B), and an IC chip 700B. The display device 20B is divided into a display region 22B, a peripheral region 24B, and a terminal region 26B. The display region 22B is a region in which pixel circuits 110B including LED chips 200B are arranged in a matrix, and is a region in which an image is displayed. The peripheral region 24B is a region around the display region 22B, and is a region in which a drive circuit that controls the pixel circuits 110B is provided. The terminal region 26B is a region in which the FPC 600B is provided. The side surface of the array substrate 100B of the outer edge of the peripheral region 24B and the terminal region 26B is a third surface 105B. The IC chip 700B is provided on the FPC 600B. The IC chip 700B supplies a signal for driving each of the pixel circuits 110B. The IC chip 700B is not limited to the above example, and may, for example, be a COG (Chip on glass) configuration in which the IC chip 700B is mounted on the array substrate 100B.

[0074] [Circuit structure of display device 20B]

[0075] Figure 12 is a block diagram showing the circuit structure of a display device according to an embodiment of the present application. As shown in Figure 12 , with respect to the display region 22B in which the pixel circuits 110B are arranged, a position adjacent in a second direction D2 (column direction) is provided with a source driver circuit 520B. A position adjacent in a first direction Dl (row direction) with respect to the display region 22B is provided with a gate driver circuit 530B. The source driver circuit 520B and the gate driver circuit 530B are provided in the above-described peripheral region 24B. However, the region in which the source driver circuit 520B and the gate driver circuit 530B are provided is not limited to the peripheral region 24B, and can be any region as long as it is outside the region in which the pixel circuits 110B are provided.

[0076] The source wiring 521B extends from the source driver circuit 520B in the second direction D2 and is connected to the plurality of pixel circuits 110B arranged in the second direction D2. The gate wiring 531B extends from the gate driver circuit 530B in the first direction Dl and is connected to the plurality of pixel circuits 110B arranged in the first direction Dl.

[0077] A terminal portion 533B is provided in the terminal region 26B. The terminal portion 533B and the source driver circuit 520B are connected by a connection wiring 541B. Similarly, the terminal portion 533B and the gate driver circuit 530B are connected by the connection wiring 541B. The FPC 600B is connected to the terminal portion 533B, and thus an external device connected to the FPC 600B is connected to the display device 20B. As a result, each of the pixel circuits 110B provided in the display device 20B is driven by a signal from the external device.

[0078] The display devices 10 and 10A shown in the first and second embodiments correspond to a part of the pixel circuit 110B of the display device 20B shown in the third embodiment.

[0079] [Pixel Circuit 110B of Display Device 20B]

[0080] Figure 13 is a circuit diagram showing a pixel circuit of a display device according to an embodiment of the present application. As shown in Figure 13 the pixel circuit 110B includes a drive transistor 960B, a selection transistor 970B, a holding capacitor 980B, and an LED chip 200B, and the like. The source electrode of the selection transistor 970B is connected to a signal line 971B. The gate electrode of the selection transistor 970B is connected to a gate line 973B. The source electrode of the drive transistor 960B is connected to an anode power supply line 961B. The drain electrode of the drive transistor 960B is connected to the anode of the LED chip 200B. The cathode of the LED chip 200B is connected to a cathode power supply line 963B. The gate electrode of the drive transistor 960B is connected to the drain electrode of the selection transistor 970B. The holding capacitor 980B is connected to the gate electrode and the drain electrode of the drive transistor 960B. The signal line 971B is supplied with a gradation signal that determines the luminance of the LED chip 200B. The gate line 973B is supplied with a signal that selects the pixel row to which the gradation signal is written.

[0081] [Cross-Sectional Configuration of Display Device 20B]

[0082] Figure 14 is a cross-sectional view of the pixel circuit 110B of the display device 20B according to an embodiment of the present application. As shown in Figure 14As shown, the display device 20B has a transistor 300B and a wiring portion 400B. The pixel circuit 110B is configured with the transistor 300B and the wiring portion 400B.

[0083] The transistor 300B is provided over the insulating substrate 305B and the base layer 310B. In this embodiment, the reference surface 109B is the upper surface of the insulating substrate 305B. The transistor 300B includes a semiconductor layer 320B, a gate insulating layer 330B, a gate electrode 340B, an insulating layer 350B, and a conductive layer 402B (a source electrode and a drain electrode). The semiconductor layer 320B is provided over the base layer 310B. The gate electrode 340B is provided over the semiconductor layer 320B. The gate insulating layer 330B is provided between the semiconductor layer 320B and the gate electrode 340B. The insulating layer 350B is provided over the gate insulating layer 330B and the gate electrode 340B. The conductive layer 402B is provided over the insulating layer 350B and connected to the semiconductor layer 320B through an opening provided in the insulating layer 350B.

[0084] The wiring portion 400B includes the conductive layer 402B, the conductive layer 403B, a planarization layer 404B, the conductive layer 406B, the insulating layer 408B, the conductive layer 410B, the conductive layer 411B, the insulating layer 120B, the conductive layer 414B, the conductive layer 416B, the pixel electrode 190B, and the connection member 250B. In the following description, a region where a wiring (the connection member 250B) connected to the anode of the LED chip 200B is provided is referred to as a first region 480B. A region where a wiring (the conductive layer 416B) connected to the cathode of the LED chip 200B is provided is referred to as a second region 490B.

[0085] The planarization layer 404B is provided over the conductive layer 402B. In the planarization layer 404B, an opening 422B which exposes part of the conductive layer 402B is provided in the first region 480B, and an opening 424B which exposes part of the conductive layer 403B is provided in the second region 490B. The conductive layer 406B is provided over the planarization layer 404B and connected to the conductive layer 403B through the opening 424B. The insulating layer 408B is provided over the conductive layer 406B. In the insulating layer 408B, an opening is provided at a position corresponding to the opening 422B. To the conductive layer 406B, for example, a common power supply voltage PVDD is supplied.

[0086] The conductive layer 410B and the conductive layer 411B are provided over the insulating layer 408B. The conductive layer 410B is connected to the conductive layer 402B through the opening 422B. The conductive layer 411B is insulated from the conductive layer 406B by the insulating layer 408B. To the conductive layer 411B, for example, a common power supply voltage PVSS (e.g., a ground voltage GND) is supplied.

[0087] The insulating layer 120B is provided on each of the conductive layer 410B and the conductive layer 411B. In the insulating layer 120B, an opening 426B that exposes the conductive layer 410B and an opening 428B that exposes the conductive layer 411B are provided. The pixel electrode 190B and the conductive layer 414B are provided in contact with the insulating layer 120B. As the insulating layer 120B, a planarization layer is used. The pixel electrode 190B is connected to the conductive layer 410B via the opening 426B. The conductive layer 414B is connected to the conductive layer 411B via the opening 428B.

[0088] The connection member 250B is provided on the pixel electrode 190B. The conductive layer 416B is provided on the conductive layer 414B. The connection member 250B is used for mounting the LED chip 200B to the wiring portion 400B. That is, the connection member 250B has a function of bonding the LED chip 200B to the pixel electrode 190B and electrically connecting them. The conductive layer 416B is formed by the same method as the connection member 250B, that is, by the micro-dispensing method, the inkjet method, the needle transfer method, the mask evaporation method, the mask sputtering method, the ACF (Anisotropic Conductive Film) / NCF (Non-Conductive Film) bonding method, or the printing method.

[0089] The planarization layer 418B is provided on each of the connection member 250B and the conductive layer 416B in a manner to bury the LED chip 200B. In the planarization layer 418B, an opening 430B that exposes the conductive layer 416B is provided. The upper surface of the planarization layer 418B coincides with the upper surface of the LED chip 200B. The upper surface of the LED chip 200B can be exposed from the planarization layer 418B, and the upper surface of the planarization layer 418B can not coincide with the upper surface of the LED chip 200B. The conductive layer 420B is provided on the planarization layer 418B. The conductive layer 420B is connected to the LED chip 200B. The conductive layer 420B is connected to the conductive layer 416B via the opening 430B.

[0090] The connection member 250B is connected to the anode of the LED chip 200B. The conductive layer 420B is connected to the cathode of the LED chip 200B. If an ON voltage that makes the transistor 300B in an ON state is supplied to the gate electrode 340B, a voltage supplied to the signal line (not shown) is supplied to the anode of the LED chip 200B via the transistor 300B, the conductive layer 410B, the pixel electrode 190B, the connection member 250B. The cathode of the LED chip 200B is connected to the conductive layer 411B via the conductive layers 420B, 416B, 414B.

[0091] [Materials of the components of the display device 20B]

[0092] As each conductive layer and the gate electrode 340B constituting the transistor 300B and the wiring portion 400B, Al, Ti, Cr, Co, Ni, Mo, Hf, Ta, W, Bi, Ag, Cu, and an alloy or a compound thereof are used. As each conductive layer and the gate electrode, the above materials can be used either individually or in combination. As each conductive layer constituting the wiring portion 400B, a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) can be used, for example. In particular, a transparent conductive material is used as the conductive layer 420B. The pixel electrode 190B has a function of reflecting light emitted from the LED chip 200B toward the wiring portion 400B upward. Thus, a material having a higher reflectance than other conductive layers is used as the pixel electrode 190B.

[0093] As each insulating layer, the gate insulating layer 330B, and the base layer 310B constituting the transistor 300B and the wiring portion 400B, an inorganic insulating material such as silicon oxide (SiO x ), silicon nitride oxide (SiO x N y ), silicon nitride (SiN x ), silicon nitride oxide (SiN x O y ), aluminum oxide (AlO x ), aluminum nitride oxide (AlO x N y ), aluminum nitride oxide (AlN x O y ), or aluminum nitride (AlN x ) is used. As each insulating layer, not only an inorganic insulating material but also an organic insulating material can be used. As the organic insulating material, a polyimide resin, an acrylic resin, an epoxy resin, a silicone resin, a fluorine resin, or a siloxane resin is used, for example. As each insulating layer, an inorganic insulating material and an organic insulating material can be used individually or in combination.

[0094] Each planarization layer constituting the wiring portion 400B can moderate the step difference of the unevenness formed by the structure below. As a material of the planarization layer, an organic resin such as a polyimide resin, an acrylic resin, an epoxy resin, a silicone resin, a fluorine resin, or a siloxane resin is used, for example. As each planarization layer, the above organic resins can be used individually or in combination.

[0095] The respective embodiments described as embodiments of the present application can be appropriately combined and implemented as long as they do not contradict each other. Modes obtained by appropriately adding, deleting, or changing the design of the constituent elements by those skilled in the art based on the display device of each embodiment, or modes obtained by adding, omitting, or changing the conditions of the processes, as long as they have the gist of the present application, are included in the scope of the present application. In the above-described embodiments, the LED chip was used as an example of an electronic component, but the electronic component is not limited to the LED chip. Other electronic components such as a light sensor can be used instead of the LED chip. That is, the present application is not limited to the display device, and can be applied to an electronic device in which other electronic components are mounted instead of or in addition to the LED. Furthermore, the present application can also be applied to an electronic device in which the above-described repair LED 207A is replaced with an electronic component such as a light sensor, or other electronic components are combined with a display device using an LED. That is, in this case, the electronic component such as a light sensor can be referred to as a fourth electronic component.

[0096] Even if other effects different from the effects brought about by the modes of the above-described respective embodiments are obtained, as long as they are obvious from the description of the present specification or can be easily predicted by those skilled in the art, they are of course understood to be brought about by the present application.

Claims

1. An electronic device, characterized in that, have: An array substrate having a first pixel electrode and a second pixel electrode; The first connecting component is disposed on the aforementioned first pixel electrode; The first LED chip is mounted on the first connecting component mentioned above; The second connecting member is disposed on the second pixel electrode and is thicker than the first connecting member. as well as The second LED chip is mounted on the aforementioned second connecting component; The first connecting component connects the first pixel electrode and the first LED chip. The second connecting component connects the second pixel electrode and the second LED chip. The distance from the reference plane of the array substrate to the upper surface of the second connecting member is greater than the distance from the reference plane to the upper surface of the first connecting member.

2. The electronic device as described in claim 1, characterized in that, The first LED chip emits light in a different color than the second LED chip.

3. The electronic device as described in claim 2, characterized in that, It also has: The third connecting member is thicker than both the first and second connecting members; and The third LED chip is mounted on the third connecting component and emits light in a color different from both the first LED chip and the second LED chip. The aforementioned array substrate also includes a third pixel electrode; The third connecting component is disposed on the third pixel electrode. The third connecting component connects the third pixel electrode and the third LED chip.

4. The electronic device as described in claim 1, characterized in that, The second connecting component is at least 1 μm thicker than the first connecting component.

5. The electronic device as described in claim 3, characterized in that, The third connecting component is at least 1 μm thicker than the second connecting component.

6. The electronic device according to any one of claims 1 to 5, characterized in that, The first connecting component and the second connecting component mentioned above contain organic matter.

7. The electronic device according to any one of claims 1 to 5, characterized in that, The amount of organic matter contained in the first connecting component and the second connecting component is greater than the amount of organic matter contained in the first pixel electrode and the second pixel electrode.

8. The electronic device as claimed in claim 1, characterized in that, The array substrate also has an insulating layer; The first pixel electrode and the second pixel electrode are respectively connected to the insulating layer.

9. The electronic device as described in claim 3, characterized in that, The array substrate also has an insulating layer; The first pixel electrode, the second pixel electrode, and the third pixel electrode are respectively connected to the insulating layer.

10. A method for manufacturing an electronic device, characterized in that, An array substrate comprising a first pixel electrode and a second pixel electrode is formed; A first connection component is formed on the aforementioned first pixel electrode; A second connecting member, which is thicker than the first connecting member, is formed on the second pixel electrode, such that the distance from the reference surface of the array substrate to the upper surface of the second connecting member is greater than the distance from the reference surface to the upper surface of the first connecting member. The first LED chip is mounted on the first connecting member in such a manner that the first connecting member contacts the first LED chip; The second LED chip is mounted on the second connecting member in such a manner that the second connecting member contacts the second LED chip.

11. A method for manufacturing an electronic device, characterized in that, An array substrate comprising a first pixel electrode and a second pixel electrode is formed; A first connection component is formed on the aforementioned first pixel electrode; A second connection component is formed on the aforementioned second pixel electrode; The first LED chip is mounted on the first connecting member in such a manner that the first connecting member contacts the first LED chip; The second LED chip is mounted on the second connecting member in such a manner that the second connecting member contacts the second LED chip; Remove the second LED chip from the second pixel electrode. A repair connection member, which is thicker than the first connection member, is formed on the second pixel electrode, such that the distance from the reference surface of the array substrate to the upper surface of the repair connection member is greater than the distance from the reference surface to the upper surface of the first connection member. A repair LED chip that emits light in the same color as the second LED chip is formed on the aforementioned repair connection component.

12. An electronic device, characterized in that, have: An array substrate having a first electrode and a second electrode; The first connecting component is provided on the first electrode mentioned above; The first electronic component is mounted on the aforementioned first connecting component; The second connecting member is disposed on the second electrode and is thicker than the first connecting member. as well as The second electronic component is mounted on the aforementioned second connecting component; The first connecting component mentioned above is in contact with the first electronic component mentioned above; The second connecting component mentioned above is in contact with the second electronic component mentioned above; The distance from the reference plane of the array substrate to the upper surface of the second connecting member is greater than the distance from the reference plane to the upper surface of the first connecting member.

13. The electronic device as claimed in claim 12, characterized in that, It also has: The third connecting member is thicker than both the first and second connecting members; and The third electronic component is mounted on the aforementioned third connecting component; The aforementioned array substrate also includes a third electrode; The third connecting component is disposed on the third electrode. The aforementioned third connecting component is in contact with the aforementioned third electronic component.

14. The electronic device as claimed in claim 13, characterized in that, It also has: The fourth connecting member is thicker than the first, second, and third connecting members described above; and The fourth electronic component is mounted on the aforementioned fourth connecting component; The aforementioned array substrate also includes a fourth electrode. The fourth connecting component is disposed on the fourth electrode. The fourth connecting component mentioned above is in contact with the fourth electronic component mentioned above.

15. The electronic device as claimed in claim 14, characterized in that, The first electronic component, the second electronic component, and the third electronic component mentioned above are LED chips that emit different colors respectively; The fourth electronic component mentioned above is an LED chip that emits the same color as one of the first to third electronic components mentioned above.

16. The electronic device as claimed in claim 14, characterized in that, The first electronic component, the second electronic component, and the third electronic component mentioned above are LED chips that emit different colors respectively; The fourth electronic component mentioned above is a light sensor.

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