Multicomponent alloy and preparation method thereof, superlattice and preparation method thereof and application, laser, photodetector, solar cell

Abstract

The present disclosure provides a multi-element alloy and a preparation method thereof, a superlattice and a preparation method and application thereof, a laser, a photodetector, and a solar cell. The preparation method of the multi-element alloy comprises using molecular beam epitaxy to alternately stack and grow at least two IIIA-VA binary alloys, at least two IIIA-VA ternary alloys, or at least one IIIA-VA binary alloy and at least one IIIA-VA ternary alloy to obtain the multi-element alloy, wherein the thickness of the IIIA-VA binary alloy and the thickness of the IIIA-VA ternary alloy are both lower than the thickness of the multi-element alloy with a molecular layer thickness. The method achieves accurate control of the content of the multi-element alloy in a multi-element alloy with a molecular layer thickness by a growth mode of a combination of binary or ternary alloys lower than a molecular layer thickness, and the performance stability of the obtained multi-element alloy is good; at the same time, it can also improve the matching between the substrate and the substrate, which is conducive to the construction of a high-quality superlattice.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of PCT patent application number PCT / CN2019 / 081971 and title “Superlattice Absorber for Detectors” filed with the China Patent Office on April 9, 2019, the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present disclosure relates to the field of semiconductor materials, and in particular, to a multi-element alloy and a preparation method thereof, a superlattice and a preparation method and application thereof, a laser, a photodetector, and a solar cell. Background Art

[0004] IIIA-VA compounds are an important class of semiconductor materials with direct transition band structures. They are widely used in the manufacture of infrared lasers, photodetectors and solar cells. In the past few decades, infrared optoelectronic devices based on type II superlattice structures of IIIA-VA semiconductor materials have made significant progress. However, traditional InAs / GaSb and InAs / InAs 1-y Sb y Intrinsic problems of the system, such as short minority carrier lifetime or low absorption coefficient, hinder further improvement of device performance.

[0005] Studies have shown that x Ga 1-x As y Sb 1-y Quaternary alloys can be used in semiconductor superlattices to improve minority carrier lifetime and absorption coefficient. x Ga 1-x As y Sb 1-y The accuracy of the content of each element in the quaternary alloy has a great influence on the performance of the semiconductor superlattice. x Ga 1-x As y Sb 1-yThe traditional preparation method of quaternary alloys is to use molecular beam epitaxy (MBE). In this method, the content of each element is controlled by adjusting the flow rate ratio of As and Sb and the flow rate ratio of In and Ga. However, in the quaternary alloy system, As and Sb will compete with each other, resulting in a large deviation between the proportion of y in the alloy and the expected proportion, and the proportion of x in the alloy will also deviate from the expected proportion. In other words, the proportion of metal elements (especially As and Sb) in the quaternary alloy grown by the traditional molecular beam epitaxy method is random. Therefore, the In prepared by the traditional method x Ga 1-x As y Sb 1-y The content of each element in the quaternary alloy is uncertain, so the performance stability of the quaternary alloy is poor.

[0006] In view of this, the present disclosure is proposed. Summary of the invention

[0007] The first purpose of the present disclosure is to provide a method for preparing a multi-component alloy. The method has simple process, is easy to prepare, and has strong controllability. It can achieve accurate control of the content of the multi-component alloy in a multi-component alloy with a thickness of one molecular layer by epitaxial growth of a combination of binary or ternary alloys with a thickness less than one molecular layer. The performance stability of the obtained multi-component alloy is good.

[0008] The second objective of the present disclosure is to provide a multi-element alloy in which the content of each element is accurate and the alloy performance is stable.

[0009] A third object of the present disclosure is to provide a superlattice.

[0010] A fourth objective of the present disclosure is to provide a method for preparing a superlattice.

[0011] A fifth object of the present disclosure is to provide an application of a superlattice in a laser, a photodetector or a solar cell.

[0012] A sixth object of the present disclosure is to provide a laser, a photodetector or a solar cell.

[0013] In order to achieve the above-mentioned purpose of the present disclosure, the following technical solutions are specially adopted:

[0014] In a first aspect, the present disclosure provides a method for preparing a multi-element alloy, comprising: using molecular beam epitaxy to alternately stack and grow at least two IIIA-VA binary alloys, at least two IIIA-VA ternary alloys, or at least one IIIA-VA binary alloy and at least one IIIA-VA ternary alloy to obtain the multi-element alloy, wherein the thickness of the IIIA-VA binary alloy and the thickness of the IIIA-VA ternary alloy are both less than the thickness of the multi-element alloy with a molecular layer thickness;

[0015] Preferably, the substrate used for molecular beam epitaxy comprises GaSb, InP or GaAs;

[0016] Preferably, the inclination angle of the substrate is 0-3 degrees;

[0017] Preferably, the substrate temperature is 150-600°C;

[0018] Preferably, the III / V beam ratio is 1:1-1:20.

[0019] As a further preferred technical solution, the multi-element alloy includes at least two Group IIIA metal elements and at least two Group VA elements;

[0020] Preferably, the IIIA group metal element includes Al, Ga or In;

[0021] Preferably, the VA group element includes As, Sb, Bi, P or N.

[0022] As a further preferred technical solution, the multi-element alloy includes A1 x A2 1-x B1 y B2 1-y , where 0 <x<1,0<y<1;A1 x A2 1-x B1 y B2 1-y include:

[0023] Alternating stacked growth of A1 x A2 1-x B1 and A1 x A2 1-x B2, where A1 x A2 1-x The thickness of B1 is N times the thickness of a multi-element alloy with a molecular layer thickness, and A1 x A2 1-x The thickness of B2 is M times the thickness of the multi-element alloy of one molecular layer thickness, N+M=1 and N=y;

[0024] Or, A1B1 and A2B2 are alternately stacked and grown, wherein the thickness of A1B1 is N times the thickness of the multi-element alloy with a molecular layer thickness, and the thickness of A2B2 is M times the thickness of the multi-element alloy with a molecular layer thickness, N+M=1 and N=y;

[0025] Or, alternately stacked A1 x B1 y B2 1-y and A2 1-x B1 y B2 1-y , where A1 x B1 y B2 1-y The thickness is N times the thickness of a multi-element alloy with a molecular layer thickness, A2 1-x B1 y B2 1-y The thickness is M times the thickness of the multi-element alloy with a molecular layer thickness, N+M=1 and N=y;

[0026] A1 and A2 are each independently any one of Al, Ga or In, and A1 and A2 are different;

[0027] B1 and B2 are each independently any one of As, Sb, Bi, P or N, and B1 and B2 are different;

[0028] Preferably, the multi-element alloy includes In x Ga 1-x As y Sb 1-y or Al x Ga 1-x As y Sb 1-y , where 0 <x<1,0<y<1;

[0029] Preferably, the multi-element alloy includes In 0.4 Ga 0.6 As 0.5 Sb 0.5 ,In 0.4 Ga 0.6 As 0.5 Sb 0.5 Including alternating stacked growth of In 0.4 Ga 0.6 As and In 0.4 Ga 0.6 Sb,In 0.4 Ga 0.6 The thickness of As is 0.5 times the thickness of a multi-element alloy with a molecular layer thickness. 0.4 Ga 0.6 The thickness of Sb is 0.5 times the thickness of the multi-element alloy with a molecular layer thickness;

[0030] Preferably, the multi-element alloy includes In 0.4 Ga 0.6 As 0.5 Sb 0.5 ,In 0.4 Ga 0.6 As 0.5 Sb 0.5 Including alternating stacked growth of InAs 0.5 Sb 0.5 and GaAs 0.5 Sb 0.5 , InAs 0.5 Sb 0.5 The thickness is 0.4 times the thickness of a multi-element alloy with a molecular layer thickness, GaAs 0.5 Sb 0.5 The thickness is 0.6 times the thickness of a multi-element alloy with a molecular layer thickness;

[0031] Preferably, the multi-element alloy includes In 0.5 Ga 0.5 As 0.5 Sb 0.5 ,In 0.5 Ga 0.5 As 0.5 Sb 0.5 It includes InAs and GaSb grown alternately in layers, wherein the thickness of InAs is 0.5 times the thickness of a multi-element alloy having a molecular layer thickness, and the thickness of GaSb is 0.5 times the thickness of a multi-element alloy having a molecular layer thickness;

[0032] Preferably, the multi-element alloy includes In 0.6 Ga 0.4 As 0.6 Sb 0.4 ,In 0.6 Ga 0.4 As 0.6 Sb 0.4 It includes InAs and GaSb grown alternately in layers, wherein the thickness of InAs is 0.6 times the thickness of a multi-element alloy with a molecular layer thickness, and the thickness of GaSb is 0.4 times the thickness of a multi-element alloy with a molecular layer thickness;

[0033] Preferably, the multi-component alloy comprises Al 0.5 Ga 0.5 As 0.5 Sb 0.5 , Al 0.5 Ga 0.5 As 0.5 Sb 0.5The invention comprises AlAs and GaSb which are grown alternately in layers, wherein the thickness of AlAs is 0.5 times the thickness of a multi-element alloy having a molecular layer thickness, and the thickness of GaSb is 0.5 times the thickness of a multi-element alloy having a molecular layer thickness.

[0034] As a further preferred technical solution, the multi-element alloy includes A1 x1 A2 x2 A3 x3 B1 y1 B2 y1 , where 0 <x1<1,0<x2<1,0<x3<1,0<y1<1,0<y2<1;A1 x1 A2 x2 A3 x3 B1 y1 B2 y1 include:

[0035] A1B1, A2B2 and A3B1 are alternately stacked and grown, wherein the thickness of A1B1 is N times the thickness of a multi-element alloy with a molecular layer thickness, the thickness of A2B2 is M times the thickness of a multi-element alloy with a molecular layer thickness, the thickness of A3B1 is K times the thickness of a multi-element alloy with a molecular layer thickness, and x1+x2+x3=y1+y2=N+M+K=1;

[0036] Or, A1B1, A2B2 and A3B2 are alternately stacked and grown, wherein the thickness of A1B1 is N times the thickness of a multi-element alloy with a molecular layer thickness, the thickness of A2B2 is M times the thickness of a multi-element alloy with a molecular layer thickness, the thickness of A3B2 is K times the thickness of a multi-element alloy with a molecular layer thickness, and x1+x2+x3=y1+y2=N+M+K=1;

[0037] Or, alternately stacked A1 x1 B1 y1 B2 y1 、A2 x2 B1 y1 B2 y1 and A3 x3 B1 y1 B2 y1 , where A1 x1 B1 y1 B2 y1 The thickness is N times the thickness of a multi-element alloy with a molecular layer thickness, A2 x2 B1 y1 B2 y1 The thickness is M times the thickness of a multi-element alloy with a molecular layer thickness, A3 x3 B1 y1 B2 y1The thickness is K times the thickness of a multi-element alloy with a molecular layer thickness, x1+x2+x3=y1+y2=N+M+K=1;

[0038] Or, alternately stacked A1 x1 A2 x2 B1 y1 、A1 x1 A2 x2 B2 y1 and A1 x1 A3 x3 B2 y1 , among which, A1 x1 A2 x2 B1 y1 The thickness is N times the thickness of a multi-element alloy with a molecular layer thickness, A1 x1 A2 x2 B2 y1 The thickness is M times the thickness of a multi-element alloy with a molecular layer thickness, A1 x1 A3 x3 B2 y1 The thickness is K times the thickness of a multi-element alloy with a molecular layer thickness, x1+x2+x3=y1+y2=N+M+K=1;

[0039] A1, A2 and A3 are each independently any one of Al, Ga or In, and A1, A2 and A3 are different;

[0040] B1 and B2 are each independently any one of As, Sb, Bi, P or N, and B1 and B2 are different;

[0041] Preferably, the multi-element alloy includes In x1 Ga x2 Al x3 As y1 Sb y2 , where 0 <x1<1,0<x2<1,0<x3<1,0<y1<1,0<y2<1,x1+x2+x3=y1+y2=1;

[0042] Preferably, the multi-element alloy includes In 0.4 Ga 0.3 Al 0.3 As 0.5 Sb 0.5 The multi-element alloy includes InAs grown in alternating layers. 0.5 Sb 0.5 、GaAs 0.5 Sb 0.5 and AlAs 0.5 Sb 0.5 , InAs 0.5 Sb0.5 The thickness is 0.4 times the thickness of a multi-element alloy with a molecular layer thickness, GaAs 0.5 Sb 0.5 The thickness is 0.3 times the thickness of a multi-element alloy with a molecular layer thickness, AlAs 0.5 Sb 0.5 The thickness is 0.3 times the thickness of a multi-element alloy with a molecular layer thickness.

[0043] In a second aspect, the present disclosure provides a multicomponent alloy obtained by using the above-mentioned method for preparing the multicomponent alloy.

[0044] In a third aspect, the present disclosure provides a superlattice comprising InAs grown in alternating layers. 0.92 Sb 0.09 and a multi-component alloy, wherein the multi-component alloy is the multi-component alloy described above;

[0045] Preferably, the superlattice is InAs 0.92 Sb 0.09 / In 0.5 Ga 0.5 As 0.46 Sb 0.54 .

[0046] In a fourth aspect, the present disclosure provides a method for preparing the above-mentioned superlattice, comprising growing InAs in alternating layers by molecular beam epitaxy. 0.92 Sb 0.09 and the multi-element alloy to obtain the superlattice;

[0047] Preferably, the substrate used for molecular beam epitaxy comprises GaSb, InP or GaAs;

[0048] Preferably, the inclination angle of the substrate is 0-3 degrees;

[0049] Preferably, the substrate temperature is 150-600°C;

[0050] Preferably, the III / V beam ratio is 1:1-1:20.

[0051] In a fifth aspect, the present disclosure provides an application of the above-mentioned superlattice or the superlattice obtained by the above-mentioned preparation method in a laser;

[0052] Or, application of the above superlattice or the superlattice obtained by the above preparation method in a photodetector;

[0053] Or, application of the superlattice or the superlattice obtained by the above preparation method in a solar cell.

[0054] In a sixth aspect, the present disclosure provides a laser, comprising the above-mentioned superlattice or the superlattice obtained by the above-mentioned preparation method;

[0055] Or, a photodetector comprising the above-mentioned superlattice or a superlattice obtained by the above-mentioned preparation method;

[0056] Or, a solar cell comprising the above superlattice or a superlattice obtained by the above preparation method.

[0057] The beneficial effects of the present disclosure are:

[0058] The preparation method of the multi-component alloy provided in the present invention adopts molecular beam epitaxy to alternately stack and grow specific binary alloys or ternary alloys to obtain the multi-component alloy. The method is simple in process, easy to prepare, and has strong controllability. The content of each metal element in the binary alloy and the ternary alloy is precisely controlled, so that the content of each element in the multi-component alloy with a thickness of one molecular layer is determined and accurate, and the performance stability of the multi-component alloy is good. At the same time, the method can also improve the matching between the multi-component alloy and the substrate, which is conducive to the construction of high-quality superlattices.

[0059] The multi-element alloy provided by the present disclosure is prepared by the above method, and thus has the advantages of accurate content of each element, stable alloy performance and high matching with the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] Figure 1(a) shows InAs(Sb) / In 0.5 Ga 0.5 As 0.46 Sb 0.54 Schematic diagram of the epitaxial growth process of superlattice;

[0061] Figure 1(b) shows InAs(Sb) / In 0.5 Ga 0.5 As 0.46 Sb 0.54 ω-2θ scanning HR-XRD curve of superlattice epitaxially grown on GaSb(100) substrate, the inset is a close-up of GaSb substrate and 0th and +1st satellite peaks;

[0062] Figure 2(a) shows InAs(Sb) / In 0.5 Ga 0.5 As 0.46 Sb 0.54 AFM image of the superlattice;

[0063] Figure 2(b) shows InAs(Sb) / In 0.5 Ga 0.5 As 0.46 Sb 0.54 HR-TEM image of a cross section of a superlattice;

[0064] Figure 3 InAs(Sb) / In0.5 Ga 0.5 As 0.46 Sb 0.54 HAADF image of superlattice;

[0065] Figure 4 InAs / GaSb superlattice and InAs(Sb) / In x Ga 1-x As y Sb 1-y Photoluminescence spectrum of superlattice (77K);

[0066] Figure 5 InAs(Sb) / In for different x and y values x Ga 1-x As y Sb 1-y Photoluminescence spectrum of the superlattice (77K) and schematic diagram of multiple FMA layers. DETAILED DESCRIPTION

[0067] The embodiments of the present disclosure will be described in detail below in conjunction with the examples, but those skilled in the art will understand that the following examples are only used to illustrate the present disclosure and should not be considered to limit the scope of the present disclosure. If no specific conditions are specified in the examples, they are carried out according to conventional conditions or conditions recommended by the manufacturer.

[0068] According to one aspect of the present disclosure, in at least one embodiment, a method for preparing a multi-element alloy is provided, comprising: using molecular beam epitaxy to alternately stack and grow at least two IIIA-VA binary alloys, at least two IIIA-VA ternary alloys, or at least one IIIA-VA binary alloy and at least one IIIA-VA ternary alloy to obtain the multi-element alloy, wherein the thickness of the IIIA-VA binary alloy and the thickness of the IIIA-VA ternary alloy are both lower than the thickness of the multi-element alloy with a molecular layer thickness.

[0069] The preparation method of the above-mentioned multi-component alloy adopts molecular beam epitaxy to alternately stack and grow specific binary alloys or ternary alloys to obtain the multi-component alloy. The method is simple in process, easy to prepare, and has strong controllability. The content of each metal element in the binary alloy and the ternary alloy is precisely controlled, so that the content of each element in the multi-component alloy with a thickness of one molecular layer is determined and accurate, and the performance stability of the multi-component alloy is good. At the same time, the method can also improve the matching between the multi-component alloy and the substrate, which is conducive to the construction of high-quality superlattices.

[0070] It can be seen that the focus of the present invention is to alternately stack and grow binary alloys and / or ternary alloys of specific thickness on a molecular layer thickness until a molecular layer thickness is reached, so that the content of each element in the multi-element alloy accurate to a molecular layer thickness is determined and accurate, and then repeat the above alternating stacking growth process until the desired alloy thickness is reached.

[0071] It should be noted that:

[0072] The above-mentioned "multi-element alloy" refers to an alloy including at least two metal elements of Group IIIA and at least two metal elements of Group VA, such as a quaternary alloy or a quinary alloy. The at least two metal elements of Group IIIA include but are not limited to Al and Ga, In and Ga, Al and In, or Al, Ga and In, etc.; the at least two metal elements of Group VA include but are not limited to As and Sb, Sb and Bi, As and Bi, As and N, Ga and P, N and P, or As, Sb and Bi, etc. The above at least two metal elements of Group IIIA and at least two metal elements of Group VA can be arbitrarily combined to form a corresponding quaternary alloy or quinary alloy.

[0073] The above-mentioned “IIIA-VA binary alloy” refers to an alloy formed of any one of the IIIA group metal elements and any one of the VA group elements.

[0074] The above-mentioned “IIIA-VA ternary alloy” refers to an alloy formed by any one of the IIIA group metal elements and any two of the VA group elements, or an alloy formed by any two of the IIIA group metal elements and any one of the VA group elements.

[0075] The above-mentioned “alternating stacking” refers to the alternating growth of different binary alloys, or the alternating growth of different ternary alloys, or the alternating growth of different binary and ternary alloys. For example, when the binary alloy or ternary alloy is X and Y, the multi-alloy is X / Y / X / Y / X / Y… or Y / X / Y / X / Y / X… (wherein X and Y are repeated with the same frequency, and X and Y are repeated at least twice respectively), and so on. When the binary alloy or ternary alloy is X, Y and Z, the multi-alloy is X / Y / Z / X / Y / Z / X / Y / Z…, Y / Z / X / Y / Z / X / Y / Z / X… or Z / X / Y / Z / X / Y / Z / X / Y… (wherein X, Y and Z are repeated with the same frequency, and X, Y and Z are repeated at least twice respectively), and so on.

[0076] In a preferred embodiment, the substrate used for molecular beam epitaxy includes GaSb, InP or GaAs. When GaSb, InP or GaAs is used as the substrate, the performance of the obtained multi-component alloy is better, and the GaSb, InP or GaAs substrate can be with or without a tilt angle, and the absence of a tilt angle will not have a negative impact on the performance of the multi-component alloy.

[0077] Preferably, the substrate temperature is 150-600° C. The above temperature is typically but not limited to 150° C., 200° C., 250° C., 300° C., 350° C., 400° C., 450° C., 500° C., 550° C. or 600° C. When the substrate temperature is within the above range, the growth of the multi-element alloy can be completed, and the temperature is relatively low, so the energy consumption is low and the cost is low.

[0078] Preferably, the inclination angle of the substrate is 0-3 degrees. The inclination angle of the substrate refers to the angle between the substrate normal and the sample growth direction. In the method for preparing the multi-component alloy provided in the preferred embodiment, the inclination angle of the substrate can be 0-3 degrees. When the inclination angle is 0-3 degrees, the performance of the obtained alloy will not be significantly different, and in particular, it can be 0. When the inclination angle is 0, the performance of the alloy is not reduced. However, in the preparation of the existing multi-component alloy, the inclination angle of the substrate cannot be 0. If the inclination angle of the substrate is 0, the performance of the obtained alloy will be significantly reduced.

[0079] Preferably, the III / V beam ratio is 1:1-1:20.

[0080] The III / V beam ratios mentioned above are typically but not limited to 1:1, 1:2, 1:4, 1:6, 1:8, 1:10, 1:12, 1:14, 1:16, 1:18 or 1:20, etc.

[0081] In a preferred embodiment, the multi-component alloy includes at least two Group IIIA metal elements and at least two Group VA elements;

[0082] Preferably, the IIIA group metal element includes Al, Ga or In;

[0083] Preferably, the Group VA metal element includes As, Sb, Bi, P or N.

[0084] In a preferred embodiment, the multi-component alloy comprises Al x A2 1-x B1 y B2 1-y , where 0 <x<1,0<y<1;A1 x A2 1-x B1 y B2 1-y include:

[0085] Alternating stacked growth of A1 x A2 1-x B1 and A1 x A2 1-x B2, where A1 x A2 1-xThe thickness of B1 is N times the thickness of a multi-element alloy with a molecular layer thickness, and A1 x A2 1-x The thickness of B2 is M times the thickness of the multi-element alloy of one molecular layer thickness, N+M=1 and N=y;

[0086] Or, A1B1 and A2B2 are alternately stacked and grown, wherein the thickness of A1B1 is N times the thickness of the multi-element alloy with a molecular layer thickness, and the thickness of A2B2 is M times the thickness of the multi-element alloy with a molecular layer thickness, N+M=1 and N=y;

[0087] Or, alternately stacked A1 x B1 y B2 1-y and A2 1-x B1 y B2 1-y , where A1 x B1 y B2 1-y The thickness is N times the thickness of a multi-element alloy with a molecular layer thickness, A2 1-x B1 y B2 1-y The thickness is M times the thickness of the multi-element alloy with a molecular layer thickness, N+M=1 and N=y;

[0088] A1 and A2 are each independently any one of Al, Ga or In, and A1 and A2 are different;

[0089] B1 and B2 are each independently any one of As, Sb, Bi, P or N, and B1 and B2 are different.

[0090] The above multi-element alloy includes A1 x A2 1-x B1 y B2 1-y The quaternary alloy is mainly composed of specific binary alloys or ternary alloys alternately stacked together. The content of each element in the binary alloy and the ternary alloy is precisely controlled, so that the content of each element in the multi-element alloy (accurate to the thickness of one molecular layer) is definite and accurate, so the performance of the multi-element alloy is relatively stable; in addition, different values ​​of M and N can make the lattice constant of the multi-element alloy different, so that it can match different substrates, which is conducive to the construction of high-quality superlattices.

[0091] The above-mentioned x may be, for example, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 or 0.9, and y may be, for example, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 or 0.9.

[0092] In a preferred embodiment, the multi-element alloy includes Inx Ga 1-x As y Sb 1-y or Al x Ga 1-x As y Sb 1-y , where 0 < x < 1 and 0 < y < 1. For example, x can be 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, or 0.9, and y can be 0.1, 0.2, 0.3, 0.4, 0.5, 0.63, 0.7, 0.8, or 0.9. In x Ga 1-x As y Sb 1-y has a relatively narrow bandgap and can be used as the well layer of a quantum well, Al x Ga 1-x As y Sb 1-y has a relatively wide bandgap and can be used as the barrier layer of a quantum well, In x Ga 1- x As y Sb 1-y and Al x Ga 1-x As y Sb 1-y In combination with InAs, different energy band structures can be constructed.

[0093] Preferably, the multi-element alloy includes In 0.4 Ga 0.6 As 0.5 Sb 0.5 , In 0.4 Ga 0.6 As 0.5 Sb 0.5 includes alternately stacked In 0.4 Ga 0.6 As and In 0.4 Ga 0.6 Sb, and the thickness of In 0.4 Ga 0.6 As is 0.5 times the thickness of the multi-element alloy with a monolayer thickness, and the thickness of In 0.4 Ga 0.6 Sb is 0.5 times the thickness of the multi-element alloy with a monolayer thickness;

[0094] Preferably, the multi-element alloy includes In 0.4 Ga 0.6 As 0.5 Sb 0.5 , In 0.4 Ga0.6 As 0.5 Sb 0.5 Including alternating stacked growth of InAs 0.5 Sb 0.5 and GaAs 0.5 Sb 0.5 ,In 0.4 As 0.5 Sb 0.5 The thickness is 0.4 times the thickness of a multi-element alloy with a molecular layer thickness, GaAs 0.5 Sb 0.5 The thickness is 0.6 times the thickness of a multi-element alloy with a molecular layer thickness;

[0095] Preferably, the multi-element alloy includes In 0.5 Ga 0.5 As 0.5 Sb 0.5 ,In 0.5 Ga 0.5 As 0.5 Sb 0.5 It includes InAs and GaSb grown alternately in layers, wherein the thickness of InAs is 0.5 times the thickness of a multi-element alloy having a molecular layer thickness, and the thickness of GaSb is 0.5 times the thickness of a multi-element alloy having a molecular layer thickness;

[0096] Preferably, the multi-element alloy includes In 0.6 Ga 0.4 As 0.6 Sb 0.4 ,In 0.6 Ga 0.4 As 0.6 Sb 0.4 It includes InAs and GaSb grown alternately in layers, wherein the thickness of InAs is 0.6 times the thickness of a multi-element alloy with a molecular layer thickness, and the thickness of GaSb is 0.4 times the thickness of a multi-element alloy with a molecular layer thickness;

[0097] Preferably, the multi-component alloy comprises Al 0.5 Ga 0.5 As 0.5 Sb 0.5 , Al 0.5 Ga 0.5 As 0.5 Sb 0.5 The invention comprises AlAs and GaSb which are grown alternately in layers, wherein the thickness of AlAs is 0.5 times the thickness of a multi-element alloy having a molecular layer thickness, and the thickness of GaSb is 0.5 times the thickness of a multi-element alloy having a molecular layer thickness.

[0098] In a preferred embodiment, the multi-component alloy comprises Al x1 A2x2 A3 x3 B1 y1 B2 y1 , where 0 <x1<1,0<x2<1,0<x3<1,0<y1<1,0<y2<1;A1 x1 A2 x2 A3 x3 B1 y1 B2 y1 include:

[0099] A1B1, A2B2 and A3B1 are alternately stacked and grown, wherein the thickness of A1B1 is N times the thickness of a multi-element alloy with a molecular layer thickness, the thickness of A2B2 is M times the thickness of a multi-element alloy with a molecular layer thickness, the thickness of A3B1 is K times the thickness of a multi-element alloy with a molecular layer thickness, and x1+x2+x3=y1+y2=N+M+K=1;

[0100] Or, A1B1, A2B2 and A3B2 are alternately stacked and grown, wherein the thickness of A1B1 is N times the thickness of a multi-element alloy with a molecular layer thickness, the thickness of A2B2 is M times the thickness of a multi-element alloy with a molecular layer thickness, the thickness of A3B2 is K times the thickness of a multi-element alloy with a molecular layer thickness, and x1+x2+x3=y1+y2=N+M+K=1;

[0101] Or, alternately stacked A1 x1 B1 y1 B2 y1 、A2 x2 B1 y1 B2 y1 and A3 x3 B1 y1 B2 y1 , where A1 x1 B1 y1 B2 y1 The thickness is N times the thickness of a multi-element alloy with a molecular layer thickness, A2 x2 B1 y1 B2 y1 The thickness is M times the thickness of a multi-element alloy with a molecular layer thickness, A3 x3 B1 y1 B2 y1 The thickness is K times the thickness of a multi-element alloy with a molecular layer thickness, x1+x2+x3=y1+y2=N+M+K=1;

[0102] Or, alternately stacked A1 x1 A2 x2 B1 y1 、A1 x1 A2 x2 B2 y1 and A1x1 A3 x3 B2 y1 , among which, A1 x1 A2 x2 B1 y1 The thickness is N times the thickness of a multi-element alloy with a molecular layer thickness, A1 x1 A2 x2 B2 y1 The thickness is M times the thickness of a multi-element alloy with a molecular layer thickness, A1 x1 A3 x3 B2 y1 The thickness of one molecular layer is K times the thickness of the multi-element alloy, x1+x2+x3=y1+y2=N+M+K=1;

[0103] A1, A2 and A3 are each independently any one of Al, Ga or In, and A1, A2 and A3 are different;

[0104] B1 and B2 are each independently any one of As, Sb, Bi, P or N, and B1 and B2 are different.

[0105] The above-mentioned x1 can be, for example, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 or 0.9, x2 can be, for example, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 or 0.9, x3 can be, for example, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 or 0.9, y1 can be, for example, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 or 0.9, and y2 can be, for example, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 or 0.9.

[0106] Preferably, the multi-element alloy includes In x1 Ga x2 Al x3 As y1 Sb y2 , where 0 <x1<1,0<x2<1,0<x3<1,0<y1<1,0<y2<1,x1+x2+x3=y1+y2=1。

[0107] Preferably, the multi-element alloy includes In 0.4 Ga 0.3 Al 0.3 As 0.5 Sb 0.5 The multi-element alloy includes In 0.4 As 0.5 Sb 0.5 , Ga 0.3As 0.5 Sb 0.5 and Al 0.3 As 0.5 Sb 0.5 ,In 0.4 As 0.5 Sb 0.5 The thickness is 0.4 times the thickness of a multi-element alloy with a molecular layer thickness. 0.3 As 0.5 Sb 0.5 The thickness is 0.3 times the thickness of a multi-element alloy with a molecular layer thickness. 0.3 As 0.5 Sb 0.5 The thickness is 0.3 times the thickness of a multi-element alloy with a molecular layer thickness.

[0108] According to another aspect of the present disclosure, a multi-element alloy obtained by the above-mentioned preparation method of the multi-element alloy is provided. The multi-element alloy is prepared by the above-mentioned method, and thus has the advantages of accurate content of each element, stable alloy performance and high compatibility with the substrate.

[0109] According to another aspect of the present disclosure, a superlattice is provided, comprising InAs grown in alternating layers. 0.92 Sb 0.09 and the above-mentioned multi-element alloy. The superlattice includes InAs 0.92 Sb 0.09 and the above-mentioned multi-element alloy, so the content of each element is accurate and reliable, the lifetime of its minority carriers is longer, and it has a higher absorption coefficient.

[0110] "Superlattice" is a multilayer film material in which two semiconductor materials with different components and good lattice matching are alternately grown in thin layers ranging from a few nanometers to tens of nanometers and maintain strict periodicity.

[0111] Preferably, the superlattice is InAs 0.92 Sb 0.09 / In 0.5 Ga 0.5 As 0.46 Sb 0.54 .

[0112] Optionally, the superlattice InAs 0.92 Sb 0.09 / In 0.5 Ga 0.5 As 0.46 Sb 0.54 The X-ray diffraction pattern characterized by Cu rays and 40kV conditions has 5 satellite peaks.

[0113] According to another aspect of the present disclosure, a method for preparing the above-mentioned superlattice is provided, comprising growing InAs in alternating layers by molecular beam epitaxy. 0.92 Sb 0.09 and the multi-element alloy to obtain the superlattice.

[0114] The method uses molecular beam epitaxy to alternately stack InAs (Sb) and the multi-element alloy to obtain a superlattice. The method has simple process, easy preparation, and strong controllability. The obtained superlattice has accurate element content, stable and reliable quality, and has a higher minority carrier lifetime and absorption coefficient.

[0115] In a preferred embodiment, the substrate used for molecular beam epitaxy comprises GaSb, InP or GaAs.

[0116] Preferably, the substrate temperature is 150-600° C. The above temperature is typically but not limited to 150° C., 200° C., 250° C., 300° C., 350° C., 400° C., 450° C., 500° C., 550° C. or 600° C., etc.

[0117] Preferably, the inclination angle of the substrate is 0-3 degrees.

[0118] Preferably, the III / V beam current ratio is 1:1-1:20. The III / V beam current ratio is typically but not limited to 1:1, 1:2, 1:4, 1:6, 1:8, 1:10, 1:12, 1:14, 1:16, 1:18 or 1:20, etc.

[0119] According to another aspect of the present disclosure, there is provided an application of the above superlattice in a laser, a photodetector or a solar cell. Applying the above superlattice in a laser, a photodetector or a solar cell can effectively improve its service life and performance.

[0120] According to another aspect of the present disclosure, a laser, a photodetector or a solar cell is provided, comprising the superlattice. The laser, the photodetector or the solar cell comprises the superlattice, and thus has the advantages of long service life and excellent performance.

[0121] The present disclosure is further described in detail below with reference to embodiments and comparative examples.

[0122] The "InAs(Sb)" mentioned in this article refers to InAs 0.92 Sb 0.09 .

[0123] Example 1

[0124] A superlattice comprising InAs(Sb) and a quaternary alloy In 0.4 Ga 0.6 As0.5 Sb 0.5 The quaternary alloy includes alternately stacked In 0.4 Ga 0.6 As and In 0.4 Ga 0.6 Sb,In 0.4 Ga 0.6 The thickness of As is 0.5 times the thickness of a quaternary alloy with a molecular layer thickness. 0.4 Ga 0.6 The thickness of Sb is 0.5 times the thickness of the quaternary alloy with a molecular layer thickness;

[0125] The preparation method of the superlattice comprises: using molecular beam epitaxy to alternately stack and grow InAs (Sb) and quaternary alloy In 0.4 Ga 0.6 As 0.5 Sb 0.5 ; InAs(Sb) thickness is 6 to 13 molecular layers, quaternary alloy In 0.4 Ga 0.6 As 0.5 Sb 0.5 Thickness is 6 to 9 molecular layers;

[0126] Quaternary Alloy In 0.4 Ga 0.6 As 0.5 Sb 0.5 The preparation method comprises: using molecular beam epitaxy to alternately stack and grow In 0.4 Ga 0.6 As and In 0.4 Ga 0.6 Sb, to obtain the quaternary alloy;

[0127] Among them, the substrate used for molecular beam epitaxy is GaSb, the substrate temperature is 130°C, and the III / V beam ratio is 1:22.

[0128] Example 2

[0129] A superlattice comprising InAs(Sb) and a quaternary alloy In 0.4 Ga 0.6 As 0.5 Sb 0.5 The quaternary alloy includes alternately stacked In 0.4 As 0.5 Sb 0.5 and Ga 0.6 As 0.5 Sb 0.5 , InAs 0.5 Sb 0.5 The thickness is 0.4 times the thickness of a quaternary alloy with a molecular layer thickness, GaAs0.5 Sb 0.5 The thickness is 0.6 times the thickness of a quaternary alloy with a molecular layer thickness;

[0130] The preparation method of the superlattice comprises: using molecular beam epitaxy to alternately stack and grow InAs (Sb) and quaternary alloy In 0.4 Ga 0.6 As 0.5 Sb 0.5 ; InAs(Sb) thickness is 6 to 13 molecular layers, quaternary alloy In 0.4 Ga 0.6 As 0.5 Sb 0.5 Thickness is 6 to 9 molecular layers;

[0131] Quaternary Alloy In 0.4 Ga 0.6 As 0.5 Sb 0.5 The preparation method comprises: using molecular beam epitaxy to alternately stack and grow InAs 0.5 Sb 0.5 and GaAs 0.5 Sb 0.5 , obtaining the quaternary alloy;

[0132] Among them, the substrate used for molecular beam epitaxy is GaSb, the substrate temperature is 130°C, and the III / V beam ratio is 1:22.

[0133] Example 3

[0134] A superlattice comprising InAs(Sb) and a quaternary alloy In 0.5 Ga 0.5 As 0.5 Sb 0.5 , the quaternary alloy includes InAs and GaSb grown alternately in layers, the thickness of InAs is 0.5 times the thickness of the quaternary alloy with a molecular layer thickness, and the thickness of GaSb is 0.5 times the thickness of the quaternary alloy with a molecular layer thickness;

[0135] The preparation method of the superlattice comprises: using molecular beam epitaxy to alternately stack and grow InAs (Sb) and quaternary alloy In 0.5 Ga 0.5 As 0.5 Sb 0.5 ; InAs(Sb) thickness is 6 to 13 molecular layers, quaternary alloy In 0.4 Ga 0.6 As 0.5 Sb 0.5 Thickness is 6 to 9 molecular layers;

[0136] Quaternary Alloy In0.5 Ga 0.5 As 0.5 Sb 0.5 The preparation method comprises: using molecular beam epitaxy to alternately grow InAs and GaSb to obtain the quaternary alloy;

[0137] Among them, the substrate used for molecular beam epitaxy is GaAs, the substrate temperature is 130°C, and the III / V beam ratio is 1:22.

[0138] Example 4

[0139] A superlattice comprising InAs(Sb) and quaternary alloy Al 0.5 Ga 0.5 As 0.5 Sb 0.5 , the quaternary alloy includes AlAs and GaSb grown alternately in layers, the thickness of AlAs is 0.5 times the thickness of the quaternary alloy with a molecular layer thickness, and the thickness of GaSb is 0.5 times the thickness of the quaternary alloy with a molecular layer thickness;

[0140] The preparation method of the superlattice comprises: using molecular beam epitaxy to alternately stack and grow InAs (Sb) and quaternary alloy Al 0.5 Ga 0.5 As 0.5 Sb 0.5 ; InAs(Sb) thickness is 13 molecular layers, quaternary alloy Al 0.5 Ga 0.5 As 0.5 Sb 0.5 Thickness is 7 molecular layers;

[0141] Quaternary Alloy Al 0.5 Ga 0.5 As 0.5 Sb 0.5 The preparation method comprises: using molecular beam epitaxy to alternately grow AlAs and GaSb to obtain the quaternary alloy;

[0142] Among them, the substrate used for molecular beam epitaxy is InP, the substrate temperature is 130°C, and the III / V beam ratio is 1:22.

[0143] Example 5

[0144] A superlattice comprising InAs(Sb) and a quinary alloy In 0.4 Ga 0.3 Al 0.3 As 0.5 Sb 0.5 The quinary alloy includes InAs grown alternately in layers. 0.5 Sb 0.5 、GaAs0.5 Sb 0.5 and AlAs 0.5 Sb 0.5 , InAs 0.5 Sb 0.5 The thickness is 0.4 times the thickness of a quinary alloy with a molecular layer thickness, GaAs 0.5 Sb 0.5 The thickness is 0.3 times the thickness of the five-element alloy with a molecular layer thickness, AlAs 0.5 Sb 0.5 The thickness is 0.3 times the thickness of the five-element alloy with a molecular layer thickness;

[0145] The preparation method of the superlattice comprises: using molecular beam epitaxy to alternately stack and grow InAs (Sb) and quinary alloy In 0.4 Ga 0.3 Al 0.3 As 0.5 Sb 0.5 ;

[0146] Five element alloy In 0.4 Ga 0.3 Al 0.3 As 0.5 Sb 0.5 The preparation method comprises: using molecular beam epitaxy to alternately stack and grow InAs 0.5 Sb 0.5 、GaAs 0.5 Sb 0.5 and AlAs 0.5 Sb 0.5 , repeating the alternating layer-by-layer growth process to obtain the quinary alloy with a suitable thickness;

[0147] Among them, the substrate used for molecular beam epitaxy is InP, the substrate temperature is 130°C, and the III / V beam ratio is 1:22.

[0148] The inclination angle of the substrate in Examples 1-5 is 3 degrees.

[0149] Example 6

[0150] The method for preparing the superlattice in Example 1 is different from that in Example 1 in that the substrate in this example is GaSb and the inclination angle of the substrate is 0.

[0151] Embodiment 7-9

[0152] The method for preparing the superlattice in Example 1 is different from that in Example 6 in that in Examples 7-9, the substrate temperature is 150° C., 400° C. or 600° C., respectively.

[0153] Examples 10-12

[0154] The method for preparing the superlattice in Example 1 is different from that in Example 8 in that in Examples 10-12, the III / V beam ratio is 1:1, 1:5 or 1:20, respectively.

[0155] As can be seen from Figure 1(a), InAs(Sb) / In 0.5 Ga 0.5 As 0.46 Sb 0.54 The superlattice consists of 13 / 7 MLs; as can be seen in Figure 1(b), the InAs(Sb) / In 0.5 Ga 0.5 As 0.46 Sb 0.54 The superlattice has high structural quality and the 0th satellite peak is almost consistent with the substrate peak, which indicates that there is no lattice mismatch between the epilayer and the GaSb substrate.

[0156] It can be seen from Figure 2(a) and Figure 2(b) that InAs(Sb) / In x Ga 1-x As y Sb 1-y The morphology of the superlattice does not consist of atomic scale, but rather a nanosheet morphology with a higher root mean square roughness.

[0157] from Figure 3 It can be seen that InAs(Sb) / In 0.5 Ga 0.5 As 0.46 Sb 0.54 The morphology of the superlattice does not consist of atomic scale, but rather a nanosheet morphology with a higher root mean square roughness.

[0158] The low-temperature photoluminescence spectra of the two superlattices were measured at 77 K. Figure 4 As can be seen in Figure 2, both superlattice samples show the same emission center, i.e., 7.7 μm, which can be assigned to microstrip and gap emission. 0.5 Ga 0.5 As 0.46 Sb 0.54 The emission intensity is about seven times that of InAs / GaSb. We attribute this enhancement to the InAs(Sb) / In 0.5 Ga 0.5 As 0.46 Sb 0.54 The superlattice has better crystal quality, and higher overlap of electron and hole wave functions (ie, better luminescence efficiency) / or longer minority carrier lifetime.

[0159] from Figure 5 It can be seen that for InAs(Sb) / In with different x and y valuesx Ga 1-x As y Sb 1-y For the superlattice and the FMA layer with different superlattice parameters, the samples show different emission characteristics, and the emission peak varies from 5.6 to 8.9 μm (as shown in Table 2). The photoluminescence results show that InAs(Sb) / In x Ga 1-x As y Sb 1-y The superlattice system can be tuned by In x Ga 1-x As y Sb 1-y The properties of the layers are designed to cover the mid- to long-wavelength spectral range.

[0160] Table 1 provides the InAs / GaSb superlattice and the conventional InAs(Sb) / In x Ga 1-x As y Sb 1-y The structural parameters of the superlattice can be seen in InAs(Sb) / In x Ga 1-x As y Sb 1-y The relationship between x and y in the quaternary alloy conforms to y=0.913x, thus achieving lattice matching with GaSb. However, due to the need to quickly and accurately adjust the fluxes of As and Sb, it is still difficult to grow a quaternary alloy with precise element content.

[0161] Table 1 InAs / GaSb superlattice and InAs(Sb) / In x Ga 1-x As y Sb 1-y Structural parameters of superlattice

[0162]

[0163] Table 2 InAs(Sb) / In with FMA layer x Ga 1-x As y Sb 1-y Structural parameters and optical properties of superlattices

[0164]

[0165] It should be noted that:

[0166] The alloy in the present disclosure may also be referred to as a digital alloy (FMA, Fractional Monolayer Alloy);

[0167] HR-XRD: High Resolution X-ray Diffraction, high resolution X-ray diffraction;

[0168] AFM: Atomic Force Microscope;

[0169] HR-TEM: High Resolution Transmission Electron Microscope, high resolution transmission electron microscope;

[0170] EDS: Energy Dispersive Spectrometer;

[0171] HAADF: High-Angle Annular Dark Field, high-angle annular dark field;

[0172] ML: Monolayer, molecular layer.

[0173] Although the present disclosure has been illustrated and described with particular embodiments, it will be appreciated that many other changes and modifications may be made without departing from the spirit and scope of the present disclosure. Therefore, it is intended to include in the appended claims all such changes and modifications that fall within the scope of the present disclosure.

[0174] Industrial Applicability

[0175] The preparation method of the multi-component alloy provided by the present invention is simple in process, easy to prepare, and highly controllable. The content of each element in the multi-component alloy with a thickness of one molecular layer is determined and accurate, and the performance stability of the multi-component alloy is good. At the same time, the method can also improve the matching between the multi-component alloy and the substrate, which is conducive to the construction of high-quality superlattices and has great promotion and application value in the field of semiconductor materials.

Claims

1. A method for preparing a multi-component alloy, characterized in that: include: At least two IIIA-VA binary alloys, at least two IIIA-VA ternary alloys, or at least one IIIA-VA binary alloy and at least one IIIA-VA ternary alloy are alternately grown in layers by molecular beam epitaxy to obtain the multi-element alloy, wherein the thickness of the IIIA-VA binary alloy and the thickness of the IIIA-VA ternary alloy are both less than the thickness of the multi-element alloy with a molecular layer thickness; wherein the multi-element alloy comprises at least two IIIA group metal elements and at least two VA group elements, and the multi-element alloy comprises Al x A2 1-x B1 y B2 1-y , where 0 <x<1,0<y<1;A1 x A2 1-x B1 y B2 1-y Includes: A1 with alternating layer growth method x A2 1-x B1 and A1 x A2 1-x B2, where A1 x A2 1-x The thickness of B1 is N times the thickness of a multi-element alloy with a molecular layer thickness, and A1 x A2 1-x The thickness of B2 is M times the thickness of the multi-element alloy of one molecular layer, N+M=1 and N=y; A1 and A2 are each independently any one of Al, Ga or In, and A1 and A2 are different; B1 and B2 are each independently any one of As, Sb, Bi, P or N, and B1 and B2 are different; Preferably, the substrate used for molecular beam epitaxy comprises GaSb, InP or GaAs; Preferably, the inclination angle of the substrate is 0-3 degrees; Preferably, the substrate temperature is 150-600°C; Preferably, the III / V beam ratio is 1:1-1:

20.

2. A method for preparing a multi-component alloy, characterized in that: include: The multi-element alloy is obtained by alternately growing at least two IIIA-VA binary alloys, at least two IIIA-VA ternary alloys, or at least one IIIA-VA binary alloy and at least one IIIA-VA ternary alloy by molecular beam epitaxy, wherein the thickness of the IIIA-VA binary alloy and the thickness of the IIIA-VA ternary alloy are both less than the thickness of the multi-element alloy with a molecular layer thickness; wherein the multi-element alloy comprises at least two IIIA group metal elements and at least two VA group elements, and is characterized in that the multi-element alloy comprises Al x A2 1-x B1 y B2 1-y , where 0 <x<1,0<y<1;A1 x A2 1-x B1 y B2 1-y include: A1B1 and A2B2 of the alternating stacking growth method, wherein the thickness of A1B1 is N times the thickness of the multi-element alloy of one molecular layer thickness, and the thickness of A2B2 is M times the thickness of the multi-element alloy of one molecular layer thickness, N+M=1 and N=y; Or, A1B1 of the alternating layer growth method y B2 1-y and A2 1-x B1 y B2 1-y , where A1 x B1 y B2 1-y The thickness is N times the thickness of a multi-element alloy with a molecular layer thickness, A2 1-x B1 y B2 1-y The thickness is M times the thickness of the multi-element alloy with a molecular layer thickness, N+M=1 and N=y; A1 and A2 are each independently any one of Al, Ga or In, and A1 and A2 are different; B1 and B2 are each independently any one of As, Sb, Bi, P or N, and B1 and B2 are different; Preferably, the multi-element alloy includes In x Ga 1-x As y Sb 1-y or Al x Ga 1-x As y Sb 1-y , where 0 <x<1,0<y<1; Preferably, the multi-element alloy includes In 0.4 Ga 0.6 As 0.5 Sb 0.5 ,In 0.4 Ga 0.6 As 0.5 Sb 0.5 Including alternating stacked growth of In 0.4 Ga 0.6 As and In 0.4 Ga 0.6 Sb,In 0.4 Ga 0.6 The thickness of As is 0.5 times the thickness of a multi-element alloy with a molecular layer thickness. 0.4 Ga 0.6 The thickness of Sb is 0.5 times the thickness of the multi-element alloy with a molecular layer thickness; Preferably, the multi-element alloy includes In 0.4 Ga 0.6 As 0.5 Sb 0.5 ,In 0.4 Ga 0.6 As 0.5 Sb 0.5 Including alternating stacked growth of InAs 0.5 Sb 0.5 and GaAs 0.5 Sb 0.5 , InAs 0.5 Sb 0.5 The thickness is 0.4 times the thickness of a multi-element alloy with a molecular layer thickness. GaAs 0.5 Sb 0.5 The thickness is 0.6 times the thickness of a multi-element alloy with a molecular layer thickness; Preferably, the multi-element alloy includes In 0.5 Ga 0.5 As 0.5 Sb 0.5 ,In 0.5 Ga 0.5 As 0.5 Sb 0.5 It includes InAs and GaSb grown alternately in layers, wherein the thickness of InAs is 0.5 times the thickness of a multi-element alloy having a molecular layer thickness, and the thickness of GaSb is 0.5 times the thickness of a multi-element alloy having a molecular layer thickness; Preferably, the multi-element alloy includes In 0.6 Ga 0.4 As 0.6 Sb 0.4 ,In 0.6 Ga 0.4 As 0.6 Sb 0.4 It includes InAs and GaSb grown alternately in layers, wherein the thickness of InAs is 0.6 times the thickness of a multi-element alloy with a molecular layer thickness, and the thickness of GaSb is 0.4 times the thickness of a multi-element alloy with a molecular layer thickness; Preferably, the multi-component alloy comprises Al 0.5 Ga 0.5 As 0.5 Sb 0.5 , Al 0.5 Ga 0.5 As 0.5 Sb 0.5 It comprises AlAs and GaSb grown alternately in layers, wherein the thickness of AlAs is 0.5 times the thickness of a multi-element alloy having a molecular layer thickness, and the thickness of GaSb is 0.5 times the thickness of a multi-element alloy having a molecular layer thickness.

3. A method for preparing a multi-component alloy, characterized in that: include: At least two IIIA-VA binary alloys, at least two IIIA-VA ternary alloys, or at least one IIIA-VA binary alloy and at least one IIIA-VA ternary alloy are alternately grown in layers by molecular beam epitaxy to obtain the multi-element alloy, wherein the thickness of the IIIA-VA binary alloy and the thickness of the IIIA-VA ternary alloy are both less than the thickness of the multi-element alloy with a molecular layer thickness; wherein the multi-element alloy comprises at least two IIIA group metal elements and at least two VA group elements, and the multi-element alloy comprises Al x1 A2 x2 A3 x3 B1 y1 B2 y1 , where 0 <x1<1,0<x2<1,0<x3<1,0<y1<1,0<y2<1;A1 x1 A2 x2 A3 x3 B1 y1 B2 y1 include: A1B1, A2B2 and A3B1 are alternately stacked and grown, wherein the thickness of A1B1 is N times the thickness of a multi-element alloy with a molecular layer thickness, the thickness of A2B2 is M times the thickness of a multi-element alloy with a molecular layer thickness, the thickness of A3B1 is K times the thickness of a multi-element alloy with a molecular layer thickness, and x1+x2+x3=y1+y2=N+M+K=1; Or, A1B1, A2B2 and A3B2 are alternately stacked and grown, wherein the thickness of A1B1 is N times the thickness of a multi-element alloy with a molecular layer thickness, the thickness of A2B2 is M times the thickness of a multi-element alloy with a molecular layer thickness, the thickness of A3B2 is K times the thickness of a multi-element alloy with a molecular layer thickness, and x1+x2+x3=y1+y2=N+M+K=1; Or, alternately stacked A1 x1 B1 y1 B2 y1 、A2 x2 B1 y1 B2 y1 and A3 x3 B1 y1 B2 y1 , where A1 x1 B1 y1 B2 y1 The thickness is N times the thickness of a multi-element alloy with a molecular layer thickness, A2 x2 B1 y1 B2 y1 The thickness is M times the thickness of a multi-element alloy with a molecular layer thickness, A3 x3 B1 y1 B2 y1 The thickness is K times the thickness of a multi-element alloy with a molecular layer thickness. x1+x2+x3=y1+y2=N+M+K=1; Or, alternately stacked A1 x1 A2 x2 B1 y1 、A1 x1 A2 x2 B2 y1 and A1 x1 A3 x3 B2 y1 , among which, A1 x1 A2 x2 B1 y1 The thickness is N times the thickness of a multi-element alloy with a molecular layer thickness, A1 x1 A2 x2 B2 y1 The thickness is M times the thickness of a multi-element alloy with a molecular layer thickness, A1 x1 A3 x3 B2 y1 The thickness is K times the thickness of a multi-element alloy with a molecular layer thickness. x1+x2+x3=y1+y2=N+M+K=1; A1, A2 and A3 are each independently any one of Al, Ga or In, and A1, A2 and A3 are different; B1 and B2 are each independently any one of As, Sb, Bi, P or N, and B1 and B2 are different.

4. The method for preparing a multicomponent alloy according to claim 3, characterized in that: The multi-component alloy includes In x1 Ga x2 Al x3 As y1 Sb y2 , where 0 <x1<1,0<x2<1,0<x3<1,0<y1<1,0<y2<1,x1+x2+x3=y1+y2=1; Preferably, the multi-element alloy includes In 0.4 Ga 0.3 Al 0.3 As 0.5 Sb 0.5 The multi-element alloy includes InAs grown in alternating layers. 0.5 Sb 0.5 、GaAs 0.5 Sb 0.5 and AlAs 0.5 Sb 0.5 , InAs 0.5 Sb 0.5 The thickness is 0.4 times the thickness of a multi-element alloy with a molecular layer thickness. GaAs 0.5 Sb 0.5 The thickness is 0.3 times the thickness of a multi-element alloy with a molecular layer thickness. AlAs 0.5 Sb 0.5 The thickness is 0.3 times the thickness of a multi-element alloy with a molecular layer thickness.

5. A multicomponent alloy obtained by the method for preparing a multicomponent alloy according to any one of claims 1 to 4.

6. A superlattice, characterized in that: Including alternating stacked growth of InAs 0.92 Sb 0.09 and a multicomponent alloy, wherein the multicomponent alloy is the multicomponent alloy according to claim 5; Preferably, the superlattice is InAs 0.92 Sb 0.09 / In 0.5 Ga 0.5 As 0.46 Sb 0.54 .

7. The method for preparing the superlattice according to claim 6, comprising growing InAs in alternating layers by molecular beam epitaxy 0.92 Sb 0.09 and the multi-element alloy to obtain the superlattice; Preferably, the substrate used for molecular beam epitaxy comprises GaSb, InP or GaAs; Preferably, the inclination angle of the substrate is 0-3 degrees; Preferably, the substrate temperature is 150-600°C; Preferably, the III / V beam ratio is 1:1-1:

20.

8. Use of the superlattice according to claim 6 or the superlattice obtained by the preparation method of claim 7 in a laser; Or, use of the superlattice described in claim 6 or the superlattice obtained by the preparation method of claim 7 in a photodetector; Or, use of the superlattice described in claim 6 or the superlattice obtained by the preparation method of claim 7 in a solar cell.

9. A laser comprising the superlattice according to claim 6 or the superlattice obtained by the preparation method according to claim 7; Or, a photodetector comprising the superlattice according to claim 6 or the superlattice obtained by the preparation method of claim 7; Or, a solar cell comprising the superlattice described in claim 6 or the superlattice obtained by the preparation method of claim 7.

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