A high-voltage high-power adjustable analog load device

Abstract

The present invention relates to a high-voltage high-power adjustable analog load device, which comprises an inductance simulation unit and a resistance simulation unit that are electrically connected. The inductance simulation unit includes a plurality of cascaded first-level inductance modules, and each of the first-level inductance modules includes a plurality of second-level inductance modules arranged in parallel; the resistance simulation unit includes a plurality of cascaded first-level resistance modules, and each of the first-level resistance modules includes a plurality of second-level resistance modules arranged in parallel; a plurality of taps are respectively provided on the inductance simulation unit and the resistance simulation unit for adjusting inductance parameters and / or resistance parameters. The device of the present invention can withstand MA-level pulse current and MJ-level energy simultaneously, and can flexibly adjust the resistance value and the inductance value. The combined load is convenient to operate and has high precision.

Description

Technical Field

[0001] The present invention relates to the technical field of pulse power simulation systems, and particularly to a high-voltage high-power adjustable simulation load device. Background Art

[0002] After being charged, a high-voltage power supply has extremely high energy, and it is often used for charging and discharging special equipment. If real special equipment is directly used for experiments, it will cost a huge amount of money; and since the experiments need to be repeated many times for verification, and the special equipment has various limiting conditions, it is quite inconvenient to use. Therefore, there is an urgent need for a device that can simulate the load conditions of real equipment and has adjustability to meet the requirements of diverse usage scenarios.

[0003] In the field of pulse power simulation technology, existing load devices are mostly fixed special loads with fixed inductance values and resistance values, corresponding to special equipment. When load adjustment is required, only disassembly and replacement of the load can be carried out, which is troublesome to operate. And when additional extended function experiments need to be carried out, if the current load cannot meet the requirements, it is inconvenient to manually combine loads, and it is difficult to guarantee the accuracy and effect; when purchasing a new load, the customization cycle is relatively long, delaying the experiment. Summary of the Invention

[0004] In view of the technical problems existing in the prior art, the present invention provides a high-voltage high-power adjustable simulation load device, which can simultaneously withstand MA-level pulse current and MJ-level energy, and can flexibly adjust the resistance value and inductance value, with convenient combined load operation and high accuracy.

[0005] The technical solution for the present invention to solve the above technical problems is as follows:

[0006] A high-voltage high-power adjustable simulation load device includes an inductance simulation unit and a resistance simulation unit that are electrically connected. The inductance simulation unit includes a plurality of cascaded first-level inductance modules, and each first-level inductance module includes a plurality of second-level inductance modules arranged in parallel; the resistance simulation unit includes a plurality of cascaded first-level resistance modules, and each first-level resistance module includes a plurality of second-level resistance modules arranged in parallel; a plurality of taps are respectively provided on the inductance simulation unit and the resistance simulation unit for adjusting inductance parameters and / or resistance parameters.

[0007] Based on the above technical solution, the present invention can be further improved as follows.

[0008] Preferably, the inductance simulation unit includes a cylindrical housing, and a common terminal interface and tap interfaces are provided on the cylindrical housing. A plurality of first-level inductance modules are coaxially cascaded in the cylindrical housing, and the taps of the plurality of first-level inductance modules are respectively connected to the common terminal interface and the plurality of tap interfaces in a one-to-one correspondence.

[0009] Preferably, a plurality of the secondary inductance modules are arranged side by side and uniformly distributed along the inner wall of the cylindrical housing, and adjacent ends of the plurality of secondary inductance modules are short-circuited, and the short-circuit point is used as its tap.

[0010] Preferably, the primary resistance module includes at least two secondary resistance modules arranged side by side, the at least two secondary resistance modules are connected in parallel through a copper bar, and the tap of the resistance simulation unit is arranged at the common point of two adjacent secondary resistance modules; each group of primary resistance modules and a group of inductance simulation units are correspondingly connected through a copper bar.

[0011] Preferably, each secondary resistance module includes a plurality of groups of inner steel pipes and outer steel pipes nested coaxially. At one end of the secondary resistance module, the ends of all the inner steel pipes are short-circuited and the ends of all the outer steel pipes are short-circuited; at the other end of the secondary resistance module, the ends of the inner steel pipes and the outer steel pipes are connected through a copper bar, so that all the inner steel pipes and the outer steel pipes are connected in series.

[0012] Preferably, the device further includes a busbar unit, and the inductance simulation unit and the resistance simulation unit are electrically connected to the busbar unit through coaxial cables respectively.

[0013] Preferably, the coaxial cable includes a core conductor, a core shielding layer, an insulating layer, an insulating shielding layer, a sheath conductor layer and an insulating outer sheath arranged coaxially from the inside to the outside in sequence, and the sheath conductor layer is a plurality of independent conductors uniformly distributed on the outer periphery of the insulating shielding layer.

[0014] Preferably, the busbar unit includes a positive busbar plate, a negative busbar plate, a crimping copper block and a bolt. One ends of the positive busbar plate and the negative busbar plate are respectively connected to an external power supply, the other ends of the positive busbar plate and the negative busbar plate are respectively connected to the inductance simulation unit and / or the resistance simulation unit, the crimping copper block is used for crimping the coaxial cable on the positive busbar plate and / or the negative busbar plate, and the bolt is arranged on the crimping copper block for fastening the crimping copper block.

[0015] Preferably, the device further includes a parameter measurement and display unit, and the parameter measurement and display unit is electrically connected to the inductance simulation unit and the resistance simulation unit, and is used for monitoring and displaying whether the parameters of the device are within a preset threshold range.

[0016] Preferably, the device further includes a housing, an installation rack is arranged inside the housing, and the inductance simulation unit and the resistance simulation unit are fixedly installed on the installation rack; heat dissipation holes are arranged on the housing, and a forced air cooling unit is arranged inside the housing, and the air outlet end of the forced air cooling unit corresponds to the heat dissipation holes.

[0017] The beneficial effects of the present invention are as follows: In this device, multiple first-level inductance modules are cascaded. By combining and connecting each first-level inductance module, various inductance parameters can be simulated. In the system, the inductance mainly bears the electrodynamic force at the MA level. Therefore, the first-level inductance module is composed of multiple second-level tapped inductors connected in parallel, which can effectively reduce the current-carrying capacity that a single inductor needs to bear. The energy absorption mainly relies on resistors. Therefore, a second-level resistor module is composed of multi-parameter high-power energy-absorbing resistors. Multiple second-level resistor modules are connected in parallel to form a first-level resistor module. Multiple first-level resistor modules are then cascaded in multiple groups to form a resistor simulation unit to simulate various resistor parameters. This device can simultaneously bear the pulse current at the MA level and the energy at the MJ level, and can flexibly adjust the resistance value and inductance value. The combined load operation is convenient and has high precision. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a block diagram of the system of the present invention;

[0019] Figure 2 It is a wiring relationship diagram of the inductance simulation unit of the present invention;

[0020] Figure 3 It is a schematic diagram of the composition of the first-level inductance module of the present invention;

[0021] Figure 4 It is a schematic structural diagram of the first-level inductance module of the present invention;

[0022] Figure 5 It is a block diagram of the composition of the resistor simulation unit of the present invention;

[0023] Figure 6 It is a cascade relationship diagram of the first-level resistor module of the present invention;

[0024] Figure 7 It is a connection structure diagram of the first-level resistor module and the first-level inductance module of the present invention;

[0025] Figure 8 It is a schematic diagram of the structure of the second-level resistor module of the present invention Figure 1 ;

[0026] Figure 9 It is a schematic diagram of the structure of the second-level resistor module of the present invention Figure 2 ;

[0027] Figure 10 It is an internal structure diagram of the second-level resistor module of the present invention;

[0028] Figure 11 It is a schematic diagram of the end connection of the second-level resistor module of the present invention;

[0029] Figure 12 It is a schematic diagram of the connection between the crimping copper block and the coaxial cable of the present invention;

[0030] Figure 13This is the first perspective of the internal installation structure diagram of the whole invention;

[0031] Figure 14 This is the second perspective of the internal installation structure diagram of the whole invention;

[0032] Figure 15 This is the external structure schematic diagram of the whole invention;

[0033] Figure 16 This is the coaxial cable structure diagram of the whole invention;

[0034] Figure 17 This is the schematic diagram of the parameter measurement and display unit of the whole invention.

[0035] In the attached drawings, the list of components represented by each reference numeral is as follows:

[0036] 1. Housing, 101. Mounting rack, 102. Heat dissipation holes, 2. Inductance simulation unit, 201. First-level inductance module, 2011. Second-level inductance module, 202. Cylindrical shell, 3. Resistance simulation unit, 301. First-level resistance module, 302. Second-level resistance module, 3021. Inner steel pipe, 3022. Outer steel pipe, 4. Busbar unit, 401. Positive busbar plate, 402. Negative busbar plate, 403. Crimping copper block, 404. Bolt, 5. Forced air cooling unit, 6. Parameter measurement and display unit, 7. Copper busbar, 8. Coaxial cable, 801. Core conductor, 802. Core shielding layer, 803. Insulating layer, 804. Insulation shielding layer, 805. Line skin conductor layer, 806. Insulating outer sheath;

[0037] a / b / c. Tap, d. Common terminal. Detailed implementation manners

[0038] The principles and features of the present invention will be described below with reference to the attached drawings. The examples given are only for explaining the present invention and are not intended to limit the scope of the present invention.

[0039] As Figure 1 shown, this embodiment provides a high-voltage high-power adjustable analog load device, including an inductance simulation unit 2 and a resistance simulation unit 3 that are electrically connected. The inductance simulation unit 2 includes a plurality of cascaded first-level inductance modules 201, and each of the first-level inductance modules 201 includes a plurality of second-level inductance modules 2011 arranged in parallel; the resistance simulation unit 3 includes a plurality of cascaded first-level resistance modules 301, and each of the first-level resistance modules 301 includes a plurality of second-level resistance modules 302 arranged in parallel; a plurality of taps are respectively provided on the inductance simulation unit 2 and the resistance simulation unit 3 for adjusting the inductance parameters and / or the resistance parameters.

[0040] Multiple first-level inductance modules 201 are cascaded. By combining and connecting each first-level inductance module 201, various inductance parameters can be simulated. In the system, the inductance mainly bears the electrodynamic force at the MA level. Therefore, the first-level inductance module 201 is composed of multiple second-level tapped inductors connected in parallel, which can effectively reduce the current-carrying capacity that a single inductor needs to bear. The energy absorption mainly relies on resistors. Therefore, a second-level resistor module 302 is composed of multi-parameter high-power energy-absorbing resistors. Multiple second-level resistor modules 302 are connected in parallel to form a first-level resistor module 301. Multiple first-level resistor modules 301 are then cascaded in multiple groups to form a resistor simulation unit 3 to simulate various resistor parameters. The device of this embodiment can withstand both the MA-level pulse current and the MJ-level energy, and can flexibly adjust the resistance value and inductance value. The combined load operation is convenient and has high precision.

[0041] The inductance simulation unit 2 uses multiple high-power first-level inductance modules 201 (reactor groups) with different parameters in cascade. By changing the series and parallel electrical connection topologies of the reactor group through connections on the input busbar and output busbar, the required inductance can be generated. The entire reactor group can achieve the inductance adjustment of various inductance values through different combination forms.

[0042] Since the rated output power of the device in this embodiment is relatively large, it is difficult for a single inductor to meet the requirements. Therefore, the method of using multiple first-level inductance modules 201 connected in series and setting multiple taps for connection is considered. Multiple first-level inductance modules 201 are initially connected in series, and the corresponding inductance is selected according to the requirements of the test system. In addition to meeting the basic requirements of electrical parameters, the connection is convenient and facilitates the operator's wiring operation. Next Figure 2 For example, by using three first-level inductance modules 201 with inductances of X μH, Y μH, and Z μH respectively, the inductance adjustment of X μH, (X + Y) μH, and (X + Y + Z) μH can be achieved.

[0043] As Figure 4 shown in the structural diagram of, the inductance simulation unit 2 includes a cylindrical housing 202. The cylindrical housing 202 is provided with a common terminal interface and tap interfaces. Multiple first-level inductance modules 201 are cascaded coaxially inside the cylindrical housing 202. The taps on multiple first-level inductance modules 201 are respectively connected to the common terminal interface and multiple tap interfaces one by one. The cylindrical housing 202 not only serves as the structural support of the inductance simulation unit 2, but also provides protection for the internal components of the inductance simulation unit 2 to prevent interference with other components. When selecting inductance parameters, by plugging different tap interfaces, the connection to tap a, b, c in Figures 2 - 4 can be respectively carried out, and the inductance parameters connected to the test system can be flexibly adjusted.

[0044] As Figures 2 - 3As shown, the three first-level inductance modules 201 in the figure are connected in series with each other. Each first-level inductance module 201 can adopt a way of connecting multiple second-level tapped inductors in parallel. According to the adjustment requirements of inductance parameters, three adjustment connection positions are reserved to facilitate the connection of taps a, b, and c to the corresponding busbars respectively. The input busbar is used to connect each inductance tap on the inductance simulation unit 2 during parameter adjustment, and the output busbar is used for the total busbar output after the series connection of multiple first-level inductance modules 201. The input busbar and the output busbar are connected to the power supply part outside the device through a busbar device after busbar connection, which greatly reduces the workload of inductance adjustment, and various adjustment requirements can be met by setting different inductance parameters. The corresponding connection method of the inductance simulation unit 2 is shown in Table 1 below:

[0045] Table 1 Connection Table of Inductance Simulation Unit

[0046]

[0047] In the system, the energy absorption mainly relies on resistance, and the inductance mainly bears the electrodynamic force at the MA level. Therefore, the first-level inductance module 201 is composed of multiple second-level tapped inductors connected in parallel, which can effectively reduce the current-carrying capacity that a single inductor needs to bear. Further, multiple second-level inductance modules 2011 are arranged side by side and evenly distributed along the inner wall of the cylindrical housing 202. The adjacent ends of multiple second-level inductance modules 2011 are short-circuited, and the short-circuit points are set as taps of the inductance simulation unit 2 at the tap interfaces. Multiple second-level inductance modules 2011 are connected in parallel to form a first-level inductance module 201, and each second-level inductance module 2011 shares the current flowing through the first-level inductance module 201, improving the service life of the inductance simulation unit 2.

[0048] As Figure 2As shown in the figure, the common terminal d is connected to the output busbar. The inductance of a single secondary inductance module 2011 between the tap a and the common terminal d is 12X μH. The inductance of a single secondary inductance module 2011 between the tap a and the tap b is 12Y μH. The inductance of a single secondary inductance module 2011 between the common terminal d and the tap c is 12Z μH. Each primary inductance module 201 is provided with 12 single secondary inductance modules 2011, which are arranged in a coaxial manner. Now, an example is given for the calculation of the inductance parameters between the common terminal d and each tap: If all the secondary inductance modules 2011 between the common terminal d and the tap a are respectively connected to two busbars, it is equivalent to 12 basic inductances of 12X μH in parallel to form an inductance of X μH. If the common terminal d of all the secondary inductance modules 2011 and the tap b are connected to the busbar end, it is equivalent to 12 basic inductances of 12(X + Y) μH in parallel to form an inductance of (X + Y) μH. The inductance of (X + Y + Z) μH is formed in the same way. This not only reduces the complexity of the single tap inductance design but also effectively reduces the parasitic parameters. Generally speaking, it is equivalent to 12 basic two-pole inductance modules with a tap parameter adjustment range of 12X μH to 12(X + Y + Z) μH in parallel to form various required inductance parameters.

[0049] In the design of the inductance simulation unit 2, the primary inductance module adopts a coaxial structure layout method to reduce the influence of large electrodynamic forces. Each basic two-pole inductance module is symmetrically distributed along the circumferential array, which also makes the magnetic flux more balanced. At the same time, it also makes the current passing through each parallel module and the electrodynamic force received more uniform. In addition to being convenient for connection, each basic two-pole inductance module is directly connected to the busbar through the copper bar 7. The cross-sectional area of the copper bar 7 is designed to exceed 150 mm 2 , and the connection between the copper bars 7 is made by high-strength bolts to ensure the current-carrying reliability requirements under large current conditions.

[0050] In this embodiment, the resistance simulation unit 3 is composed of multi-parameter high-power energy-absorbing resistors to form a secondary resistance module 302. Multiple secondary resistance modules 302 are connected in parallel to form a primary resistance module 301. The primary resistance module 301 is then formed by cascading multiple groups, as Figure 5 shown, to achieve adjustable resistance. Specifically, as Figure 6 and Figure 7 shown, the primary resistance module 301 includes at least two secondary resistance modules 302 arranged side by side. At least two secondary resistance modules 302 are connected in parallel through the copper bar 7. The tap of the resistance simulation unit 3 is set at the common point of two adjacent secondary resistance modules 302. Each group of primary resistance modules 301 is detachably connected to a group of inductance simulation units 2 through the copper bar 7. Further, as Figures 9 - 11As shown, each of the secondary resistance modules 302 includes a plurality of steel pipe groups. Each steel pipe group includes an inner steel pipe 3021 and an outer steel pipe 3022 that are coaxially nested. At one end of the secondary resistance module 302, the ends of all the inner steel pipes 3021 are short-circuited, and the ends of all the outer steel pipes 3022 are short-circuited. At the other end of the secondary resistance module 302, the ends of the inner steel pipe 3021 and the outer steel pipe 3022 in the same group are connected by a copper bar 7, so that all the inner steel pipes 3021 and the outer steel pipes 3022 in each group are in series. Here, the resistance value of all the steel pipes in series in each group is the resistance value of the steel pipe group, and the resistance value of all the steel pipe groups in parallel is the resistance value of the secondary resistance module 302.

[0051] As Figure 10 shown, the secondary resistance module 302 adopts a coaxial symmetric layout of multiple groups of stainless steel pipes. The stainless steel pipe is a non-ferromagnetic material. In addition to meeting the requirements of the resistance value, the resistance formed by processing also has a relatively small parasitic inductance due to the coaxial structure arrangement. The secondary resistance module 302 composed of multiple identical stainless steel pipe components is connected in parallel to form the primary resistance module 301, which can further reduce the influence of the parasitic inductance and achieve an approximately non-inductive effect. The non-inductive resistance manufactured in the above manner has the characteristics of simple structure, stable performance, safety and reliability, and convenient heat dissipation. Multiple primary resistance modules 301 are connected in series to form an adjustable resistance simulation unit 3. Taps are provided at each series connection point of the resistance simulation unit 3, making the resistance adjustment convenient. As Figure 6 shown, in this embodiment, two primary resistance modules 301 are connected in series as an example. The common terminal d is connected to the output bus bar. The resistance of the primary resistance module 301 between the tap a and the common terminal d is A mΩ, and the resistance of the primary resistance module 301 between the tap b and the tap a is B mΩ. The resistance between the tap b and the common terminal d is the sum of the resistances of the two series-connected primary resistance modules 301, which is (A + B) mΩ.

[0052] When adjusting the resistance parameters, the resistance values of different connection methods are shown in Table 2 below.

[0053] Table 2 Resistance Simulation Unit Connection Table

[0054]

[0055] The schematic diagram of a single basic secondary resistance module 302 is as Figure 8 and Figure 9 shown. Each basic secondary resistance module 302 selects a series array of four groups of stainless steel pipes, and the inner stainless steel pipe 3021 is coaxially arranged inside the outer steel pipe 3022.

[0056] The cross-section of the secondary resistance module 302 is as Figure 10As shown, the stainless-steel inner and outer tubes are arranged coaxially, which can ensure the minimum parasitic inductance of the secondary resistance module 302. At one end of each stainless-steel tube group, the same type of steel tubes are short-circuited, and at the other end, different types of steel tubes are connected in series, so as to ensure that the overall volume is small enough.

[0057] In this embodiment, as Figure 12 and Figure 13 shown, the device is further provided with a busbar unit 4. The inductance simulation unit 2 and the resistance simulation unit 3 are respectively electrically connected to the busbar unit 4 through coaxial cables 8. More specifically, the busbar unit 4 includes a positive busbar plate 401, a negative busbar plate 402, a crimping copper block 403 and a bolt 404. The input busbar is arranged on the positive busbar plate 401, and the output busbar is arranged on the negative busbar plate 402; one ends of the positive busbar plate 401 and the negative busbar plate 402 are respectively connected to an external power supply through the input busbar and the output busbar, and the other ends of the positive busbar plate 401 and the negative busbar plate 402 are respectively connected to the inductance simulation unit 2 and / or the resistance simulation unit 3; the crimping copper block 403 is used to crimp the coaxial cable 8 on the positive busbar plate 401 and / or the negative busbar plate 402, and the bolt 404 is detachably arranged on the crimping copper block 403 through threads for fastening the crimping copper block 403.

[0058] When designing the structure, considering the strength of the whole device during cascading, high-strength bolts 404 are considered for crimping here; considering the installation process and ensuring an absolutely reliable insulation design, an insulating support plate is arranged between the positive busbar plate 401 and the negative busbar plate 402 for separating the two. The insulating support plate uses epoxy fiberglass, which not only considers the safety requirement of 10 kV withstand voltage between the positive and negative poles, but also well ensures the structural strength of the whole device.

[0059] The function of the simulated load of this device is to test and evaluate the output characteristics of the pulse power supply. It needs to withstand the impact of MA-level pulse current. Therefore, the electrical characteristics and reliability of the simulated load directly affect the credibility of the pulse power supply parameter evaluation. The basic requirements for the simulated load are high current-carrying capacity and impact resistance. Coaxial cables 8 are commonly used in high-voltage and high-current occasions. They adopt a multi-layer structure such as a core conductor 801, an insulating layer 803, and a wire skin. When a large current passes through, the magnetic fields generated by the core current and the wire skin current cancel each other out, reducing the interference to external devices. In this embodiment, the structure of the coaxial cable 8 is as Figure 16As shown in the figure, the coaxial cable 8 includes a core conductor 801, a core shielding layer 802, a silicone rubber insulating layer 803, an insulating shielding layer 804, a sheath conductor layer 805, and an insulating outer sheath 806, which are coaxially arranged from the inside out in sequence. The sheath conductor layer 805 is composed of several independent conductors evenly distributed on the outer circumference of the insulating shielding layer 804. The coaxial cable 8 is designed with a bending radius of 500 mm and is integrally fixed on the mounting rack 101 of the analog load device to facilitate output current collection and reduce the loop connection impedance.

[0060] The pulse power supply is connected to the current collection unit 4 through the coaxial cable 8. The input current on the current collection unit 4 is evenly connected around the current collection unit 4 through multiple coaxial cables 8. The output current of the pulse power supply is connected to the analog load through the coaxial cable 8, and the analog load is connected to the bus bar according to the actual situation. The magnetic field and electrodynamic force of the crimping part of the coaxial cable 8 on the bus bar are simulated and analyzed. It is obtained that under the condition of a current of 1 MA, the maximum force on the copper bus bar 7 is 163 kN, and the maximum deformation is 0.1 mm, which meets the expected design value.

[0061] In this embodiment, as Figure 17 shown, the device further includes a parameter measurement and display unit 6, which is electrically connected to the inductance simulation unit 2 and the resistance simulation unit 3 and is used to monitor and display whether the parameters of the device are within the preset threshold range. The parameter measurement and display unit 6 can monitor various electrical parameters during the operation of the system, evaluate the operation state of the system, and record the operation parameters in real time for research and analysis. Its main components include a current sensor, a high-precision differential high-voltage probe, a temperature display unit, etc. The current sensor can use a CT sampling coil sleeved on the current input end of the analog load device to sample the current value during the operation of the device. Multiple high-precision differential high-voltage probes can be set to monitor the voltages of the inductance simulation unit 2 and the resistance simulation unit 3 respectively to more accurately monitor the operation status of the system. The temperature can be monitored by using multiple NTC temperature sensors to detect the ambient temperature at multiple locations of the device. The display unit immediately displays various measurement parameters and the operation status of the device. When the measurement parameters are abnormal, an alarm prompt can also be given through the display unit to ensure the safety of the system operation.

[0062] In the overall structural design of the device, to ensure structural safety, as Figure 15As shown in the figure, a protective housing 1 will be designed outside the entire simulation load device, which can protect the safety of external operators and play a role in dust prevention. The housing 1 is provided with heat dissipation holes 102, and a forced air cooling unit 5 is arranged inside the housing 1. The forced air cooling unit 5 uses a cooling fan, and the air outlet end of the cooling fan is arranged towards the heat dissipation holes 102, which is used to discharge the hot air in the device to the outside of the housing 1 to dissipate heat for the device, so as to ensure that the resistance simulation unit 3 can quickly drop to room temperature after heating, and ensure the repeated progress of adjacent two experiments. An installation rack 101 is arranged inside the housing 1, and the inductance simulation unit 2 and the resistance simulation unit 3 are fixedly installed on the installation rack 101.

[0063] In the pulse test, the MJ-level large energy is injected in a pulse injection manner within the ms-level time. Under the action of such a huge transient thermal power, high temperature will be generated locally in the simulation device, which affects the operation safety of the entire device. Therefore, how to control the local temperature rise and what kind of thermal control technology to adopt will be a key technology for the realization of the high-power continuous firing impedance simulation device. This solution adopts a thermal control method combining self-heat dissipation of materials and forced air cooling. Among them, self-heat dissipation of materials is used to control the local temperature rise, that is, by using the heat dissipation characteristics of the materials themselves, while ensuring the electrical parameters and the sufficient quality of the materials themselves, ensuring that the transient temperature rise of the simulation device is within a safe range. Forced air cooling realizes the dissipation of the total absorbed energy to ensure the stable operation of the simulation device under the repetition frequency condition.

[0064] When designing the structure of the impedance adjustment unit, the inductance simulation unit 2 and the resistance simulation unit 3 are not placed separately in two boxes. Because if the inductance and resistance parts are designed into separate boxes respectively, there will inevitably be problems such as their respective busbars and complex connections between them. Therefore, from the overall structural consideration, the following optimized design is carried out:

[0065] The inductance simulation unit 2 is divided into 12 groups, and the resistance simulation unit 3 is also divided into 12 groups. In this way, it can be considered to place the resistance simulation unit 3 and the inductance simulation unit 2 in the same box. With such a design, the resistance simulation unit 3 and the inductance simulation unit 2 can be placed close to each other and can be directly connected by a copper busbar 7 without separate busbar connection and then connection, reducing the loop parasitic parameters and making the overall parameters of the device better controlled. After the inductance simulation unit 2 and the resistance simulation unit 3 are connected by the copper busbar 7 inside the device, they are uniformly connected to the busbar unit 4 through two coaxial cable 8 interfaces, as Figure 13 shown. In this embodiment, 12 groups of inductance simulation units 2 and 12 groups of resistance simulation units 3 are evenly arranged in two cabinets, and the layout of 6 groups of resistance simulation units 3 and inductance simulation units 2 is as follows Figure 13 and Figure 14 shown.

[0066] The mounting rack 101 is mainly used for the installation and integration of the inductance simulation unit 2, the resistance simulation unit 3, the busbar unit 4, and the parameter measurement and display unit 6 to ensure the reliable stability of the overall structure, reduce the influence of peripheral parasitic parameters, and at the same time ensure the safety and convenience of operation for the operator. The connection accessories should include connection copper bars 7 for each unit, insulating parts, etc. to ensure the safety and reliability of the overall device.

[0067] When designing this mounting rack 101, the structural strength is designed according to the national three-level highway transportation standard, which can avoid damage to internal equipment caused by highway transportation vibration, meet the use requirements of outdoor and indoor tests. At the same time, high-strength lifting rings are designed around the rack to facilitate the movement, installation and debugging of the load. As shown in the three-dimensional structure diagrams of the resistance simulation unit 3 and the inductance simulation unit 2 and the overall structure display, the mounting rack 101 adopts a single-sided external output structure, that is, Figure 13 as shown, the busbar unit 4 is concentrated on one side of the mounting rack 101, and Figure 14 as shown, the adjustment of inductance and / or resistance parameters is carried out on the other side of the mounting rack 101. In addition, a fan is equipped for forced air-cooling heat dissipation. Such a design not only facilitates the external output connection of the load, but also can dissipate heat for the adjustment of resistance and inductance parameters and the load after discharging.

[0068] Adopting the above structural layout, its advantages are as follows:

[0069] (1) It reduces the connection in the test loop and the individual busbar of the module. The resistance simulation unit 3 and the inductance simulation unit 2 can be directly connected in series using short copper bars 7, making it better to ensure the accuracy;

[0070] (2) It is convenient to adjust. When grouped and placed, it is more convenient to switch the parameters of the resistance and inductance;

[0071] (3) It reduces the mutual influence of the magnetic fields between the inductance simulation units 2. Since the resistance simulation unit 3 is designed with a coaxial structure, its influence on the external magnetic field is small, and the placement distance of the inductances is widened, making the influence between adjacent inductances negligible;

[0072] (4) It is more convenient for assembly and transportation. 12 groups of single modules adopt the same layout method, so that the size of a single box is not too large, which is convenient for assembly and movement.

[0073] Working principle:

[0074] In this device, multiple first-level inductance modules 201 are cascaded. By combining and connecting each first-level inductance module 201, various inductance parameters can be simulated. In the system, the inductance mainly bears the electrodynamic force at the MA level. Therefore, the first-level inductance module 201 is composed of multiple second-level tapped inductors connected in parallel, which can effectively reduce the current-carrying capacity that a single inductor needs to bear. The energy absorption mainly relies on resistors. Therefore, a second-level resistor module 302 is composed of multi-parameter high-power energy-absorbing resistors. Multiple second-level resistor modules 302 are connected in parallel to form a first-level resistor module 301. Multiple first-level resistor modules 301 are then cascaded in multiple groups to form a resistor simulation unit 3 to simulate various resistor parameters. This device can withstand both MA-level pulsed current and MJ-level energy simultaneously, and can flexibly adjust the resistance value and inductance value. The combined load operation is convenient and has a high precision.

[0075] The above are only the preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A high-voltage high-power adjustable analog load device, characterized in that, it includes an inductance simulation unit (2) and a resistance simulation unit (3) which are electrically connected. The inductance simulation unit (2) includes a plurality of cascaded first-level inductance modules (201), and each of the first-level inductance modules (201) includes a plurality of second-level inductance modules (2011) arranged in parallel; the resistance simulation unit (3) includes a plurality of cascaded first-level resistance modules (301), and each of the first-level resistance modules (301) includes a plurality of second-level resistance modules (302) arranged in parallel; a plurality of taps are respectively provided on the inductance simulation unit (2) and the resistance simulation unit (3) for adjusting inductance parameters and / or resistance parameters; wherein, a plurality of second-level resistance modules (302) are arranged side by side and are connected in parallel through copper bars. The taps of the resistance simulation unit (3) are arranged at the common points of adjacent second-level resistance modules (302); each group of first-level resistance modules (301) is correspondingly connected to a group of inductance simulation units (2) through copper bars; each of the second-level resistance modules (302) includes a plurality of steel pipe groups, and each steel pipe group respectively includes an inner steel pipe (3021) and an outer steel pipe (3022) nested coaxially. At one end of the second-level resistance module (302), the ends of all groups of inner steel pipes (3021) are short-circuited, and the ends of all groups of outer steel pipes (3022) are short-circuited; at the other end of the second-level resistance module (302), the ends of the inner steel pipe (3021) and the outer steel pipe (3022) of the same group are connected through a copper bar, so that the inner steel pipe (3021) and the outer steel pipe (3022) of the same group are connected in series, and different steel pipe groups are connected in parallel.

2. The high-voltage high-power adjustable analog load device according to claim 1, characterized in that, the inductance simulation unit (2) includes a cylindrical shell (202), and a common terminal interface and a tap interface are provided on the cylindrical shell (202). A plurality of the first-level inductance modules (201) are cascaded coaxially in the cylindrical shell (202), and the taps of the plurality of first-level inductance modules (201) are connected to the common terminal interface and a plurality of tap interfaces in one-to-one correspondence.

3. The high-voltage high-power adjustable analog load device according to claim 2, characterized in that, a plurality of the second-level inductance modules (2011) are arranged side by side and are uniformly arranged along the inner wall of the cylindrical shell (202). The adjacent ends of the plurality of second-level inductance modules (2011) are short-circuited, and the short-circuit point is used as its tap.

4. The high-voltage high-power adjustable analog load device according to claim 1 or 3, characterized in that, the device further includes a busbar unit (4), and the inductance simulation unit (2) and the resistance simulation unit (3) are respectively electrically connected to the busbar unit (4) through coaxial cables (8).

5. The high-voltage high-power adjustable analog load device according to claim 4, characterized in that, The coaxial cable (8) includes a core conductor (801), a core shielding layer (802), an insulating layer (803), an insulating shielding layer (804), a sheath conductor layer (805), and an insulating outer sheath (806) that are coaxially arranged from the inside out. The sheath conductor layer (805) is a plurality of independent conductors evenly distributed on the outer periphery of the insulating shielding layer (804).

6. The high-voltage high-power adjustable analog load device according to claim 4, wherein, the busbar unit (4) includes a positive busbar plate (401), a negative busbar plate (402), a crimping copper block (403), and a bolt (404). One end of the positive busbar plate (401) and the negative busbar plate (402) are respectively connected to an external power supply. The other ends of the positive busbar plate (401) and the negative busbar plate (402) are respectively connected to the inductance simulation unit (2) and / or the resistance simulation unit (3). The crimping copper block (403) is used to crimp the coaxial cable (8) on the positive busbar plate (401) and / or the negative busbar plate (402). The bolt (404) is arranged on the crimping copper block (403) for fastening the crimping copper block (403).

7. The high-voltage high-power adjustable analog load device according to any one of claims 1, 3, 5, and 6, wherein, the device further includes a parameter measurement and display unit (6). The parameter measurement and display unit (6) is electrically connected to the inductance simulation unit (2) and the resistance simulation unit (3) respectively, and is used to monitor and display whether the parameters of the device are within a preset threshold range.

8. The high-voltage high-power adjustable analog load device according to any one of claims 1, 3, 5, and 6, wherein, the device further includes a housing (1). An installation rack (101) is provided inside the housing (1). The inductance simulation unit (2) and the resistance simulation unit (3) are fixedly installed on the installation rack (101). Heat dissipation holes (102) are provided on the housing (1). A forced air cooling unit (5) is provided on the inner side of the housing (1). The air outlet end of the forced air cooling unit (5) is arranged corresponding to the heat dissipation holes (102).

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