Photolithography apparatus, mark formation method and pattern formation method

Abstract

This invention relates to a photolithography apparatus, a mark forming method, and a pattern forming method. It aims to suppress production efficiency reduction in the pattern forming of a substrate. A photolithography apparatus for forming a pattern on a substrate includes: a mark forming unit that irradiates the substrate with irradiation light to form a mark; a control unit that controls the mark forming unit; and a mark measuring unit that measures the position of the mark. The control unit determines, based on information related to the formation position of the mark formed by the mark forming unit, at least one of the relative positions of the irradiation light irradiating the substrate from the mark forming unit during the formation of a first mark and the substrate, and the relative positions of the mark measuring unit and the substrate during the measurement of the first mark.

Description

Technical Field

[0001] This invention relates to a photolithography apparatus, a marking method, and a pattern forming method. Background Technology

[0002] In recent years, the manufacturing of flat panel displays (FPDs) such as liquid crystal displays (LCDs) and organic EL displays has seen an increase in display size, requiring efficient use of substrates. Therefore, to improve substrate utilization efficiency, a technology known as MMG (Multi-Model on Glass) has gained attention, which uses multiple devices to form panels of different sizes on a single substrate. In MMG technology, the relative positional relationship of the exposed areas can be ensured among multiple exposure devices by using alignment markers.

[0003] Patent Document 1 discloses a mark forming apparatus (AMF: Alignment Mark Former) for forming alignment marks in an exposure apparatus and forming alignment marks on a substrate. By measuring the formed marks using the mark measuring units of multiple apparatuses, the relative positional relationship of the exposed areas can be ensured between the exposure apparatuses.

[0004] Existing technical documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-200444 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] However, during the repeated marking process, the marked position may deviate from the intended position. When the marking measuring unit is moved according to the intended position, there is a possibility that the mark may not converge within the measurement range of the marking measuring unit. In this case, a process is required to reset the relative position of the marking measuring unit and the substrate to bring the mark into the measurement range of the marking measuring unit, which reduces production efficiency.

[0008] Therefore, the object of the present invention is to provide a photolithography apparatus that helps to suppress the reduction of production efficiency in the patterning of substrates.

[0009] Methods for solving problems

[0010] To achieve the above objectives, a photolithography apparatus for forming patterns on a substrate, as one aspect of the present invention, is characterized by comprising: a mark forming section that irradiates the substrate with irradiation light to form a mark; a control section that controls the mark forming section; and a mark measuring section that measures the position of the mark, wherein the control section determines, based on information relating to the formation position of the mark formed by the mark forming section, at least one of the relative position of the irradiation light irradiating the substrate from the mark forming section to the substrate during the formation of the first mark and the relative position of the mark measuring section to the substrate during the measurement of the first mark.

[0011] Other features of the invention will become clear from the following description of exemplary embodiments (with reference to the accompanying drawings).

[0012] The effects of the invention

[0013] According to the present invention, for example, a photolithography apparatus can be provided that helps to suppress the reduction in production efficiency during the patterning of a substrate. Attached Figure Description

[0014] Figure 1 This is a diagram illustrating the structure of a pattern forming system utilizing multiple exposure devices.

[0015] Figure 2 This is a schematic diagram showing the structure of the exposure apparatus.

[0016] Figure 3 This is a diagram showing the structure of the mark-forming part.

[0017] Figure 4 This is a diagram showing a substrate after a latent image pattern has been formed using markers for position alignment.

[0018] Figure 5 This is a flowchart illustrating the pattern forming method in the first embodiment.

[0019] Figure 6 This is a flowchart illustrating the pattern forming method in the second embodiment.

[0020] Figure 7 This is a flowchart illustrating the pattern forming method in the third embodiment.

[0021] Figure 8 This is a flowchart illustrating the pattern forming method in the fourth embodiment.

[0022] (Symbol Explanation)

[0023] 10: First exposure apparatus; 12: Mark forming unit; 12a: Light source; 13: Mark measuring unit; 14, 24: Control unit; 40: Main control unit; AM: Mark; W: Substrate. Detailed Implementation

[0024] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Furthermore, in the drawings, the same reference numerals are used for the same parts, and repeated descriptions are omitted.

[0025] <First Implementation>

[0026] First, the overall pattern forming system of this embodiment will be described. The pattern forming system of this embodiment is a system that performs so-called MMG technology, using multiple pattern forming apparatuses (photolithography apparatuses) to form latent image patterns in different regions of a single layer on a substrate. Examples of pattern forming apparatuses include an exposure apparatus that scans and exposes a substrate to transfer a mask pattern onto the substrate, an imprinting apparatus that uses a mold to form a pattern of imprint material on the substrate, and a drawing apparatus that uses charged particle lines to form a pattern on the substrate. Furthermore, examples of substrates include glass plates and semiconductor wafers; in this embodiment, an example of using a glass plate as a substrate will be described.

[0027] Furthermore, the markings formed using MMG technology according to this embodiment can be formed, for example, on the first layer initially formed on a bare substrate where no pattern has yet been formed, but are not limited thereto, and can also be formed on the second layer or later. In pattern formation of the second layer or later, the relative positional relationship of pattern formation between devices can be ensured by forming the same pattern by overlapping with the pattern formed in the underlying layer. Therefore, in the following description, an example of forming a pattern on the first layer will be described.

[0028] Figure 1 This is a schematic diagram showing the overall structure of the pattern forming system 100 that forms a latent image pattern on a substrate in this embodiment. The direction perpendicular to the surface of the substrate W is defined as the Z direction, and the directions perpendicular to the Z direction are defined as the X and Y directions. The pattern forming system 100 includes a first exposure apparatus 10, a second exposure apparatus 20, a transport unit 30, and a main control unit 40. The transport unit 30 transports the substrate W to the first exposure apparatus 10 and the second exposure apparatus 20. The main control unit 40 is, for example, a computer having a CPU and memory, and controls the overall pattern forming system 100. Furthermore, the main control unit 40 controls the transmission of data and information between the first exposure apparatus 10 and the second exposure apparatus 20.

[0029] Furthermore, the first exposure apparatus 10 and the second exposure apparatus 20 are described as independent devices, that is, devices in which each exposure apparatus is covered by a chamber (housing). However, multiple optical systems can also be configured in the same chamber, with one illumination system and one projection system as a group (one workstation), and the substrate can be exposed using multiple optical systems. Alternatively, the substrate can be rotated 90 degrees and then moved back into the same exposure apparatus for exposure in the rotated state.

[0030] Figure 2 This diagram illustrates a structural example of the first exposure apparatus 10. The first exposure apparatus 10 includes a pattern forming unit 11, a mark forming unit 12, a mark measuring unit 13, a control unit 14, and a substrate mounting stage 15. The pattern forming unit 11 includes a light source 11a, an illumination optical system 11b, a mask mounting stage 11c, and a projection optical system 11d. The mask mounting stage 11c is a mounting stage capable of holding and moving a mask M. The illumination optical system 11b illuminates the mask M using light from the light source 11a. The substrate mounting stage 15 is a mounting stage capable of holding and moving a substrate W. The mask M and the substrate W are positioned at optically conjugate positions, separated by the projection optical system 11d. The projection optical system 11d projects the pattern of the mask M illuminated by the illumination optical system 11b onto the substrate W, forming a latent image pattern in the resist layer on the substrate W.

[0031] The mark forming unit 12 forms a mark on the substrate W based on information indicating the target position coordinates of a mark (also called an alignment mark, but hereinafter referred to as a mark) to be formed for position alignment. The mark measuring unit 13 measures the position of the mark formed by the mark forming unit 12, measuring the position of the mark in the coordinate system of the first exposure apparatus 10. The control unit 14 is configured, for example, a computer having a CPU, memory, etc., and controls each part of the pattern forming unit 11, the mark forming unit 12, and the mark measuring unit 13 in an overall manner according to the device coordinate system. In addition, the control unit 14 also functions as an output unit that can output data and information obtained by the first exposure apparatus 10 in a manner that allows the information measured by the first exposure apparatus 10 to be used in the second exposure apparatus 20. In this embodiment, the control unit 14 is provided independently of the main control unit 40, but it can also be provided as a component of the main control unit 40.

[0032] The second exposure apparatus 20 includes a pattern forming unit, a mark measuring unit 23, a control unit 24, and a substrate stage 25. In this embodiment, the second exposure apparatus 20 differs from the first exposure apparatus 10 in that it does not have a mark forming unit, but the other structures are the same. Alternatively, a mark forming unit may also be provided in the second exposure apparatus 20. The pattern forming unit in the second exposure apparatus forms a latent image pattern, for example, in an exposure area different from the exposure area of ​​the latent image pattern formed by the first exposure apparatus 10 on the substrate W. The mark measuring unit 23 measures the position of the mark formed by the mark forming unit 12 of the first exposure apparatus 10, and measures the position of the mark in the coordinate system of the second exposure apparatus 20. The control unit 24 is, for example, a computer having a CPU, memory, etc., and controls the pattern forming unit and the mark measuring unit 23 in the second exposure apparatus according to the device coordinate system (i.e., controls each process using the second exposure apparatus 20). In this embodiment, the control unit 24 is provided independently of the main control unit 40, but it may also be provided as a component of the main control unit 40.

[0033] Figure 3 This diagram illustrates a structural example of the mark forming unit 12. The mark forming unit 12 includes a light source 12a and multiple optical elements (mirrors 12b, 12c, 12d, and lens 12e). Irradiation light emitted from the light source 12a is reflected by the mirrors 12b, 12c, and 12d, and a mark AM is formed on the substrate W based on information indicating the target position coordinates where the mark AM should be formed. The lens 12e serves to focus the irradiation light emitted from the light source 12a onto the substrate W. The mirror 12b reflects only light of a specific wavelength emitted from the light source 12a; the unreflected light is incident on the photoelectric sensor 16. The photoelectric sensor 16 acquires information related to the position of the light source 12a. The photoelectric sensor 16 can detect the irradiation light and acquire information such as the illuminance distribution and the centroid position of the illuminance distribution. Since changes in the incident angle and position of the irradiation light cause changes in the detection result of the photoelectric sensor 16, it can detect the amount of positional change of the light source 12a. Furthermore, the reflectors 12b, 12c, and 12d are structures that can adjust their position and angle. By changing the position and angle of the reflectors 12b, 12c, and 12d, the formation position of the mark AM formed on the substrate W can be changed.

[0034] The formation position of the mark AM formed on the substrate W may deviate from the intended position during repeated mark formation processes. For example, this could be due to positional shifts in the light source 12a, reflectors 12b, 12c, 12d, etc. Specifically, the heat generated by the light source 12a may cause deformation of the metal component supporting the light source 12a, resulting in a shift in the position of the light source 12a and thus causing the mark AM to deviate from its intended position.

[0035] The control unit 14 controls the relative position of the substrate W and the mark measuring unit 13 to move according to the intended position for forming the mark in order to measure the formed mark AM. When at least one of the substrate W or the mark measuring unit 13 is moved according to the intended position, if the mark forming position deviates from the intended position, the mark AM may be located outside the field of view of the mark measuring unit 13. In this case, it is necessary to search for the position of the mark AM and reset the relative position of the mark measuring unit 13 and the substrate W to a position where the mark AM can be measured stably, thus reducing the productivity of the pattern forming process of the substrate W. Therefore, by performing the angle adjustments of the reflectors 12b, 12c, and 12d as described above, the formation position of the mark AM formed on the substrate W can be corrected, and the reduction in productivity can be suppressed.

[0036] Figure 4 This diagram illustrates an example of forming a pattern in one layer on a substrate using exposure apparatus 10 and exposure apparatus 20 by using markers. In the pattern forming section 11 of the first exposure apparatus 10, three markers AM1 to AM3 are formed on the substrate W near the four corners of a rectangular substrate W, not arranged in a straight line. The three markers AM1 to AM3 are measured by the marker measuring section 13 of the first exposure apparatus 10 and the marker measuring section 23 of the second exposure apparatus 20. Then, based on the measurement results, the pattern is exposed in region P1 on the substrate W in the first exposure apparatus 10 and in region P2 on the substrate W in the second exposure apparatus. Furthermore, the size, number, and arrangement method of the exposure shots, the number of markers, and the arrangement method of the markers can be changed.

[0037] Next, refer to Figure 5 The pattern forming method in this embodiment is explained. Figure 5 This is a flowchart of pattern formation in this embodiment. Figure 5 The process shown in the flowchart is executed by the control unit 14, control unit 24 (or main control unit 40) controlling each part.

[0038] Furthermore, in the following description, "first mark" refers to a mark formed on the first substrate where patterning is performed. "Second mark" refers to a mark formed on the second substrate where patterning has been performed before patterning of the first substrate. The first substrate and the second substrate are different substrates.

[0039] In step S501, the substrate W is transported to the first exposure apparatus 10 by the transport unit 30.

[0040] In step S502, the control unit 14 determines whether the offset of the position of the previously formed mark (hereinafter referred to as the second mark) from the intended position where the mark is to be formed exceeds a predetermined threshold. If the threshold is exceeded, the process proceeds to step S503; otherwise, it proceeds to step S504. Additionally, if the second mark has not been formed previously, the process also proceeds to step S504.

[0041] Alternatively, the position of the marker to be formed this time (hereinafter referred to as the first marker) can be predicted based on the position information of multiple markers, including the previously formed second marker, and the determination in step S502 can be performed. For example, the difference between the expected position of the marker to be formed and the position of the previously formed marker can be plotted, and a first-order approximation of the offset can be calculated to predict the position of the first marker to be formed this time. It can also be determined whether the offset between the predicted position of the first marker to be formed and the expected position of the marker to be formed exceeds a predetermined threshold. If it exceeds the threshold, proceed to step S503; if it does not exceed the threshold, proceed to step S504.

[0042] Here, the intended position for forming the mark refers to, for example, the position of the mark formed in the coordinate system of the first exposure apparatus 10, stored by the control unit 14 in such a way that the mark is located at the center of the measurement field of view of the mark measuring unit 13. Alternatively, the intended position for forming the mark may also refer to the position of the mark formed on a reference substrate (e.g., the first substrate of a batch of multiple substrates). In this case, it is preferable to form the mark at the center position measured by the mark measuring unit 13. Furthermore, the threshold determination in step S502 may not be performed consistently; the mark formation position correction in step S503 may be performed each time. The position information of the second mark is stored in the control unit 14 in step S506, which will be described later.

[0043] In step S503, the relative position of the irradiation light irradiating the substrate W from the mark forming section 12 during the formation of the first mark and the substrate W is determined. That is, the position of the irradiation light irradiating the substrate W from the mark forming section 12 is corrected. As a correction method, it is performed by controlling at least one of the driving of the reflectors 12b, 12c, and 12d and the driving of the substrate mounting stage 15 by the control unit 14. When there are multiple mark forming sections 12, the common displacement component of these multiple offsets can also be corrected by the substrate mounting stage 15, and the residual component of the offset of each mark forming section 12, which is obtained by subtracting the common displacement component from each offset, can be corrected by the reflectors 12b, 12c, and 12d. Alternatively, the position of the irradiation light irradiating the substrate W can be determined by controlling the driving of the light source 12a by the control unit 14 instead of driving the reflectors 12b, 12c, and 12d.

[0044] In step S504, marks AM1 to AM3 (first marks) are formed on the substrate W by the mark forming unit 12 according to the coordinate system of the first exposure apparatus 10.

[0045] In step S505, the mark measuring unit 13 measures the positions of marks AM1 to AM3 formed on the substrate W in step S504. At this time, in order to measure the positions of marks AM1 to AM3, the control unit 14 controls the marking measuring unit 13 and the substrate stage 15 according to the coordinate system of the first exposure apparatus 10.

[0046] In step S506, the control unit 14 stores the position information obtained by measuring the first mark in step S505 in a manner that can be used in the mark formation of the substrate for the next pattern formation. In this embodiment, it is envisioned that the position information of the mark is stored each time in step S506, but it is not limited to this, and it is also possible not to store it each time. For example, the storage of position information can be performed at an appropriate frequency according to the number of mark formation operations. In addition, a threshold determination as described in step S502 can be performed in step S506, and the position information can be stored only if a predetermined threshold is exceeded, so that the relative position of the irradiation light irradiated from the mark formation unit 12 and the substrate W can be corrected during the next mark formation.

[0047] In step S507, based on the position information indicating the target position coordinates to which the first latent image pattern P1 should be formed, the pattern forming unit 11 of the first exposure apparatus 10 forms the first latent image pattern P1 on the substrate W according to the coordinate system of the first exposure apparatus 10.

[0048] In step S508, the transfer unit 30 transfers the substrate W from the first exposure apparatus 10 to the second exposure apparatus 20.

[0049] In step S509, the mark measuring unit 23 measures the positions of marks AM1 to AM3 formed on the substrate W in step S504. At this time, in order to measure the positions of marks AM1 to AM3, the control unit 24 controls the marking measuring unit 23 and the substrate stage 25 according to the coordinate system of the second exposure apparatus 20.

[0050] In step S510, based on the position information indicating the target position coordinates to which the second latent image pattern P2 should be formed, the pattern forming unit 21 of the second exposure device 20 forms the second latent image pattern P2 on the substrate W according to the coordinate system of the second exposure device 20.

[0051] At this point, the difference between the positions of marks AM1-3 measured by mark measuring unit 13 according to the coordinate system of the first exposure apparatus and the positions of marks AM1-3 measured by mark measuring unit 23 according to the coordinate system of the second exposure apparatus is calculated. Based on this difference, the exposure area of ​​the second latent image pattern P2 formed on the substrate W according to the coordinate system of the second exposure apparatus 20 is corrected. Specifically, the exposure area of ​​the second latent image pattern P2 formed on the substrate W is determined in a manner that corrects for the offset in the positional relationship between the first latent image pattern P1 and the second latent image pattern P2 caused by individual differences in the pattern forming characteristics in the first exposure apparatus 10 and the second exposure apparatus 20. Individual differences in pattern forming characteristics refer, for example, errors in the apparatus coordinate system and errors generated when the substrate W is mounted.

[0052] As a method for correcting the position of the second latent image pattern P2, for example, the control unit 24 controls the driving and rotation of an optical element (e.g., two parallel plates) that is one of the components of the projection optical system of the second exposure apparatus 20. By driving and rotating the optical element, the exposure position on the substrate W can be corrected (e.g., by magnification correction in the Y direction, which is the direction of scanning exposure, and in the X direction, which is perpendicular to the direction of scanning exposure).

[0053] In step S511, the substrate W is removed from the second exposure apparatus 20 by the transport unit 30.

[0054] As described above, in this embodiment, if the mark formation position is offset, the relative position of the irradiation light irradiated from the mark formation unit 12 and the substrate W can be corrected, thus preventing a decrease in the mark formation position accuracy. Therefore, it is possible to suppress a decrease in production efficiency during the pattern formation process.

[0055] <Second Implementation Method>

[0056] In this embodiment, an implementation method for correcting the mark measurement position measured by the mark measurement unit 13 in the event of a mark formation position offset will be described. In the first embodiment, the result obtained by the mark measurement unit 13 measuring the mark position is used for the correction of the mark formation position in the next step, but in this embodiment, the result obtained by the mark measurement unit 13 measuring the mark position is also used for the correction of the mark measurement position in the next step. Furthermore, the structures of the pattern forming system 100, the first exposure device 10, and the second exposure device 20 are the same as in the first embodiment, so descriptions are omitted. In addition, matters not mentioned in this embodiment are handled according to the first embodiment.

[0057] Reference Figure 6 The pattern forming method in this embodiment is explained. Figure 6 This is a flowchart of pattern formation in this embodiment. Figure 6The process shown in the flowchart is executed by the control unit 14, control unit 24 (or main control unit 40) controlling each part.

[0058] In steps S601, S602, and S603, the substrate W is fed into the first exposure apparatus 10, the marks AM1 to 3 (first marks) are formed, and the threshold is determined, respectively. Steps S601, S602, and S603 correspond to steps S501, S504, and S502 described in the first embodiment, so detailed descriptions are omitted.

[0059] In step S604, the relative position of the mark measuring unit 13 and the substrate is determined when measuring the first mark. That is, the relative position of the mark measuring unit 13 and the substrate W is corrected. As a correction method, it is performed by controlling at least one of the driving of the mark measuring unit 13 and the driving of the substrate mounting stage 15 by the control unit 14.

[0060] In step S605, the mark measuring unit 13 measures the positions of marks AM1 to AM3 formed on the substrate W in step S504. At this time, in order to measure the positions of marks AM1 to AM3, the control unit 14 controls the movement of the mark measuring unit 13 and the substrate stage 15 according to the coordinate system of the first exposure apparatus 10. If the relative positions of the mark measuring unit 13 and the substrate W have been corrected in step S604, the mark measuring unit 13 and the substrate stage 15 are driven according to this correction.

[0061] In step S606, the position information obtained from measuring the first mark in step S605 is stored in the control unit 14 in a manner that allows it to be used in subsequent mark measurements on the substrate. In this embodiment, it is envisioned that the mark position information is stored each time in step S606, but this is not a limitation; it may not be stored every time. For example, the storage of position information may be performed at an appropriate frequency based on the number of mark formation operations. Alternatively, a threshold determination as described in step S502 may be performed in step S606, storing the position information only if a predetermined threshold is exceeded, and correcting the relative position of the mark measurement unit 13 and the substrate W during the next mark measurement.

[0062] In steps S607 to S611, the formation of the first latent image pattern, the transfer of the substrate W to the second exposure apparatus 20, the position measurement of marks AM1 to AM3, the formation of the second latent image pattern, and the removal of the substrate W from the second exposure apparatus 20 are performed respectively. Steps S607 to S611 correspond to steps S507 to S511 described in the first embodiment, so detailed descriptions are omitted.

[0063] Furthermore, in the mark measurement in step S609, after the relative position of the mark measuring unit 23 and the substrate W is corrected according to the correction performed in step S604, the position measurement of marks AM1 to AM3 is performed.

[0064] As described above, in this embodiment, the relative position of the mark measuring unit 12 and the substrate W can be corrected when the mark formation position is offset. Therefore, even if the accuracy of the mark formation position decreases, the reduction in production efficiency of the pattern formation process can be suppressed.

[0065] <Third Implementation Method>

[0066] In this embodiment, an implementation method is described that corrects the mark formation position by using a photoelectric sensor 16 to obtain information indicating the position of the mark forming section (e.g., position information of the light source 12a). This embodiment is similar to the first embodiment in correcting the mark formation position, but differs in that the result obtained by using the photoelectric sensor 16 to obtain information related to the position of the light source 12a is used for correction in the next mark formation. Furthermore, the structures of the pattern forming system 100, the first exposure device 10, and the second exposure device 20 are the same as in the first embodiment, so descriptions are omitted. Additionally, matters not mentioned in this embodiment are handled according to the first embodiment.

[0067] Reference Figure 7 The pattern forming method in this embodiment is explained. Figure 7 This is a flowchart of pattern formation in this embodiment. Figure 7 Each step in the flowchart shown is executed by the control unit 14, control unit 24 (or main control unit 40) controlling each part. Furthermore, in the following description, an example of obtaining the illuminance distribution of the illumination light using a photoelectric sensor will be given as information indicating the position of the light source 12a, but this is not limited to this; any information that can detect changes in the position of the light source 12a (e.g., the centroid position of the illuminance of the illumination light) is acceptable.

[0068] Furthermore, in the following description, "first illuminance distribution" refers to the illuminance distribution of the illumination light when forming a mark on the first substrate during patterning. "Second illuminance distribution" refers to the illuminance distribution of the illumination light when forming a mark on the second substrate, which has already been patterned, before patterning the first substrate. The first substrate and the second substrate are different substrates.

[0069] In step S701, the substrate W is transported to the first exposure apparatus 10 by the transport unit 30.

[0070] In step S702, based on the previously detected illuminance distribution of the irradiation light (hereinafter referred to as the second illuminance distribution), it is determined whether to correct the relative position of the irradiation light irradiated from the mark forming unit 12 and the substrate W. In the determination method, for example, the control unit 14 determines whether the offset between the intended position of the mark to be formed and the position of the mark formed by the position of the light source 12a predicted based on the second illuminance distribution exceeds a predetermined threshold. If the threshold is exceeded, the process proceeds to step S703; otherwise, it proceeds to step S704. Furthermore, if the reference illuminance distribution and the second illuminance distribution have not been previously detected, the process also proceeds to step S704.

[0071] Alternatively, the detection result of the current illuminance distribution (hereinafter referred to as the first illuminance distribution) can be predicted based on information from multiple previously detected illuminance distributions, and the determination in step S702 can be performed. For example, the position of the marker formed by the predicted position of the light source 12a based on the previously detected illuminance distribution can be described, and a first approximation of the offset can be calculated to predict the current position of the light source 12a. It can also be determined whether the offset between the predicted position of the current light source 12a and the expected position of the marker formation exceeds a predetermined threshold. If the threshold is exceeded, the process proceeds to step S703; otherwise, it proceeds to step S704. Alternatively, the threshold determination in step S702 may not be performed all the time; for example, the correction of the marker formation position in step S703 may be performed each time. The information of the second illuminance distribution is stored in the control unit 14 in step S706, which will be described later.

[0072] In steps S703 and S704, the relative positions of the irradiation light irradiated from the mark forming section 12 and the substrate W are corrected, and the marks AM1 to AM3 are formed, respectively. Steps S703 and S704 correspond to steps S503 and S504 described in the first embodiment, so detailed descriptions are omitted.

[0073] In step S705, the first illuminance distribution of the illumination light emanating from the mark forming section 12 is detected using the photoelectric sensor 16.

[0074] In step S706, the control unit 14 stores the information of the first illuminance distribution detected in step S705 in a manner that can be used in the next marking formation on the substrate. Alternatively, the control unit 14 stores the position information of the light source 12a predicted based on the first illuminance distribution in a manner that can be used in the next marking formation on the substrate. In this embodiment, it is envisioned that the storage in step S706 is performed every time, but it is not limited to this, and it may not be performed every time. For example, the storage of information may be performed at an appropriate frequency according to the number of times the marking is performed. In addition, a threshold determination as described in step S702 may be performed in step S706, and information may be stored only if a predetermined threshold is exceeded, so as to correct the relative position of the marking forming unit 12 and the substrate W during the next marking formation.

[0075] In steps S707 to S712, the following are performed: measuring the positions of markers AM1 to AM3, forming the first latent image pattern, transferring the substrate W to the second exposure apparatus 20, measuring the positions of markers AM1 to AM3, forming the second latent image pattern, and removing the substrate W from the second exposure apparatus 20. Steps S707 to S712 correspond to steps S505 and S507 to S511 described in the first embodiment, so detailed descriptions are omitted.

[0076] As described above, in this embodiment, when the position of the light source 12a is offset, the relative position of the irradiation light irradiated from the mark forming unit 12 and the substrate W can be corrected, thus preventing a decrease in the accuracy of the mark formation position. Therefore, it is possible to suppress a decrease in production efficiency during the pattern forming process.

[0077] <Fourth Implementation>

[0078] In this embodiment, an implementation method is described in which the position of the light source 12a is determined and the mark measurement position measured by the mark measurement unit 13 is corrected by using the photoelectric sensor 16 to obtain information indicating the position of the mark forming unit (e.g., the position information of the light source 12a). This embodiment is similar to the second embodiment in that it corrects the mark measurement position measured by the mark measurement unit 13, but differs from the second embodiment in that the result obtained by using the photoelectric sensor 16 to obtain the position information of the light source 12a is used for the correction of this mark measurement. Furthermore, the structures of the pattern forming system 100, the first exposure device 10, and the second exposure device 20 are the same as in the first embodiment, so descriptions are omitted. Additionally, matters not mentioned in this embodiment are handled according to the first embodiment.

[0079] Reference Figure 8 The pattern forming method in this embodiment is explained. Figure 6 This is a flowchart of pattern formation in this embodiment. Figure 6The process shown in the flowchart is executed by the control unit 14, control unit 24 (or main control unit 40) controlling each part.

[0080] In steps S801 to S804, the substrate W is fed into the first exposure apparatus 10, the marks AM1 to 3 (first marks) are formed, the first illuminance distribution is detected using the sensor 16, and the first illuminance distribution is stored. Steps S801 to S804 correspond to steps S701, S704 to S706 described in the third embodiment, so detailed descriptions are omitted.

[0081] In step S805, based on the first illuminance distribution detected in step S803, it is determined whether to correct the relative position of the illumination light irradiated from the mark forming unit 12 and the substrate W. In this determination method, for example, the control unit 14 determines whether the offset between the intended position of the mark to be formed and the position of the mark formed by the position of the light source 12a predicted based on the first illuminance distribution exceeds a predetermined threshold. If the threshold is exceeded, the process proceeds to step S806; otherwise, it proceeds to step S807. Alternatively, the threshold determination in step S805 may not be performed continuously; for example, the correction of the mark measurement position in step S806 (described later) may be performed each time.

[0082] In step S806, the relative positions of the calibration mark measuring unit 13 and the substrate W are corrected. As a calibration method, it is performed by controlling at least one of the driving of the calibration mark measuring unit 13 and the driving of the substrate mounting stage 15 by the control unit 14.

[0083] In steps S807 to S812, the following are performed: measuring the positions of markers AM1 to AM3, forming the first latent image pattern, transferring the substrate W to the second exposure apparatus 20, measuring the positions of markers AM1 to AM3, forming the second latent image pattern, and removing the substrate W from the second exposure apparatus 20. Steps S807 to S812 correspond to steps S707 to S712 described in the third embodiment, so detailed descriptions are omitted.

[0084] Furthermore, in the mark measurement in step S810, after correcting the relative position of the mark measurement unit 23 and the substrate W according to the correction performed in step S806, the position measurement of marks AM1 to AM3 is performed.

[0085] As described above, in this embodiment, the relative position of the mark measuring unit 13 and the substrate W can be corrected when the position of the light source 12a shifts. Therefore, even if the accuracy of the mark formation position decreases, the reduction in production efficiency during pattern formation can be suppressed. Furthermore, in the first to third embodiments, correction is performed based on the measurement and detection results of the previously processed substrate (the second substrate). In contrast, in this embodiment, the advantage is that the mark position measurement can be corrected using the detection results of the current substrate (the first substrate).

[0086] Furthermore, the contents described in embodiments 1 to 4 can also be implemented in combination. For example, it can be implemented by combining the contents described in the first embodiment for the formation position of the correction mark and the second embodiment for the measurement position of the correction mark, thus correcting both the formation position and the measurement position of the mark. Alternatively, it can be implemented by combining the contents described in the first embodiment for measuring the mark position using the mark measuring unit 13 and the third embodiment for predicting the position of the light source 12a using the photoelectric sensor 16.

[0087] <Implementation Method of Manufacturing the Item>

[0088] The article manufacturing method according to embodiments of the present invention is suitable for, for example, manufacturing flat panel displays (FPDs). The article manufacturing method of this embodiment includes: a step of forming a latent image pattern on a photosensitive material coated on a substrate using the aforementioned exposure apparatus to obtain an exposed substrate (exposure step); and a step of developing the substrate after the latent image pattern has been formed in the aforementioned step to obtain a developed substrate (development step). Furthermore, the above manufacturing method includes other known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, cutting, bonding, encapsulation, etc.). Compared to conventional methods, the article manufacturing method of this embodiment is more advantageous in at least one aspect of article performance, quality, productivity, and production cost.

[0089] Embodiments of the present invention can also be implemented by a computer that reads and executes computer-executable instructions (e.g., one or more programs) recorded on a storage medium (which may also be more fully referred to as a "non-transitory computer-readable storage medium") to perform the functions of one or more embodiments of the above embodiments and / or includes one or more circuits (e.g., application-specific integrated circuits (ASICs)) for performing the functions of one or more embodiments of the above embodiments, and by a method performed by a computer of the system or device by, for example, reading and executing computer-executable instructions from a storage medium to perform the functions of one or more embodiments of the above embodiments and / or controlling one or more circuits to perform the functions of one or more embodiments of the above embodiments. The computer may include one or more processors (e.g., a central processing unit (CPU), a microprocessor unit (MPU)) and may include separate computers or networks of separate processors to read and execute computer-executable instructions. The computer-executable instructions may, for example, be provided to the computer from a network or a storage medium. The storage medium may, for example, include a hard disk, random access memory (RAM), read-only memory (ROM), storage devices for distributed computing systems, optical discs (such as CDs, DVDs, or Blu-ray discs). TM ), flash memory devices, memory cards, etc.

[0090] The preferred embodiments of the present invention have been described above, but the present invention is not limited to these embodiments, and various modifications and alterations can be made within the scope of its spirit.

Claims

1. A photolithography apparatus, characterized in that, A first latent image pattern is formed in a layer on a substrate, and the first latent image pattern is formed before a second latent image pattern is formed in a region of the layer different from the region where the first latent image pattern is formed. The photolithography apparatus has: The marking forming unit irradiates the substrate with illumination light to form a position alignment mark for determining the relative positional relationship between the first latent image pattern and the second latent image pattern, the mark including a first mark and a second mark; The control unit controls the mark forming unit; as well as The marker measuring unit measures the position of the marker. The control unit determines, based on information obtained by measuring the position of the second mark formed before the formation of the first mark using the mark measuring unit, at least one of the relative positions of the irradiation light illuminating the substrate from the mark forming unit during the formation of the first mark and the substrate, and the relative positions of the mark measuring unit and the substrate during the measurement of the first mark.

2. The photolithography apparatus according to claim 1, characterized in that, If the difference between the intended position for forming the second mark and the actual position for forming the second mark exceeds a predetermined threshold, the control unit controls at least one of the relative positions of the irradiation light illuminating the substrate from the mark forming unit and the substrate during the formation of the first mark, and the relative positions of the mark measuring unit and the substrate during the measurement of the first mark.

3. The photolithography apparatus according to claim 1, characterized in that, The information refers to the location of the mark forming part.

4. The photolithography apparatus according to claim 1, characterized in that, The photolithography apparatus also includes a sensor for detecting the irradiated light. The sensor obtains information related to the formation position of the mark by acquiring information indicating the position of the mark forming part.

5. The photolithography apparatus according to claim 1, characterized in that, If the difference between the intended position for forming the second mark and the predicted position of the second mark based on information relating to the position of the mark forming part when forming the second mark exceeds a predetermined threshold, the control unit controls at least one of the relative positions of the irradiation light from the mark forming part to the substrate when forming the first mark and the substrate, and the relative positions of the mark measuring part and the substrate when measuring the first mark.

6. The photolithography apparatus according to claim 1, characterized in that, If the difference between the intended position for forming the first mark and the predicted position of the first mark based on information relating to the position of the mark forming part when forming the first mark exceeds a predetermined threshold, the control unit controls the relative position of the mark measuring part and the substrate when measuring the first mark.

7. The photolithography apparatus according to claim 3, characterized in that, The marking forming section includes a light source and optical elements for irradiating the substrate with illumination light. The control unit controls the position of at least one of the light source and the optical element.

8. The photolithography apparatus according to claim 7, characterized in that, The optical element includes at least one of a mirror and a lens.

9. The photolithography apparatus according to claim 1, characterized in that, The control unit predicts the location where the first mark will be formed based on information relating to the formation locations of a plurality of marks formed prior to the first mark.

10. The photolithography apparatus according to claim 1, characterized in that, The control unit controls at least one of the following based on information relating to the formation position of a mark formed in a reference substrate in which a latent image pattern has been formed before the first mark is formed: the illumination light irradiating the substrate from the mark forming unit during the formation of the first mark and the relative position of the substrate, and the relative position of the mark measuring unit and the substrate during the measurement of the first mark.

11. The photolithography apparatus according to claim 10, characterized in that, The reference substrate is the first substrate in a batch to which multiple substrates belong.

12. The photolithography apparatus according to claim 1, characterized in that, The control unit controls at least one of the relative positions of the irradiation light from the mark forming unit to the substrate during the formation of the first mark and the relative positions of the mark measuring unit and the substrate during the measurement of the first mark, such that the mark measuring unit is positioned at a location capable of measuring the first mark.

13. The photolithography apparatus according to claim 1, characterized in that, The photolithography apparatus also includes a substrate stage for holding the substrate. The control unit controls the substrate mounting stage and controls the position of the substrate.

14. The photolithography apparatus according to claim 1, characterized in that, The mark is a positional alignment mark used to determine the relative positional relationship between the first latent image pattern formed by the lithography apparatus and the second latent image pattern formed by a lithography apparatus different from the lithography apparatus.

15. A photolithography apparatus, characterized in that, A first latent image pattern is formed in a layer on a substrate, and the first latent image pattern is formed before a second latent image pattern is formed in a region of the layer different from the region where the first latent image pattern is formed. The photolithography apparatus has: The mark forming unit irradiates the substrate with illumination light to form a position alignment mark for determining the relative positional relationship between the first latent image pattern and the second latent image pattern; The control unit controls the mark forming unit; as well as The marker measuring unit measures the position of the marker. The control unit determines, based on information relating to the formation positions of a plurality of marks formed by the mark forming unit before the formation of the first mark, at least one of the relative positions of the irradiation light from the mark forming unit to the substrate during the formation of the first mark and the substrate, and the relative positions of the mark measuring unit and the substrate during the measurement of the first mark.

16. A method for forming a pattern, characterized in that, include: The first latent image pattern forming step involves forming a latent image pattern on the substrate using the photolithography apparatus described in any one of claims 1 to 15. as well as The second latent image pattern formation process uses a different photolithography apparatus than the photolithography apparatus to form a latent image pattern on the substrate.

17. A method for manufacturing an article, characterized in that, include: The exposure process involves exposing the substrate using the pattern forming method described in claim 16 to obtain an exposed substrate. as well as In the developing process, the exposed substrate is developed to obtain a developed substrate. In the manufacturing method, an article is manufactured based on the developing substrate.

18. A storage medium storing a program for causing a computer to perform the steps of the pattern forming method of claim 16.

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