Crystal oscillator package structure

By setting a U-shaped connection area and an electrode layer in the crystal oscillator packaging structure, the influence of external vibration on the resonant frequency is solved, frequency stability is achieved, and the influence of external vibration on the resonant region is avoided.

CN113965184BActive Publication Date: 2025-12-12TXC CORP
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Patent Information

Application Number
CN202111135274.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2021-08-24
Filing Date
2021-09-27
Publication Date
2025-12-12
Estimated Expiration
2041-09-27

AI Technical Summary

Technical Problem

In existing technologies, external mechanical vibrations or instantaneous impacts are easily transmitted to the main vibrating part of the quartz vibrator, resulting in unstable vibration frequency.

Method used

The crystal oscillator packaging structure includes a packaging base, a resonant crystal chip, and a top cover. A U-shaped connection area and a first connecting arm are set around the side wall of the packaging base to form a U-shaped connection area with the inner side wall facing the resonant area. Combined with the electrode layer and sealing ring, external vibrations are prevented from being transmitted to the resonant area.

Benefits of technology

It effectively prevents external mechanical vibrations or instantaneous impacts from being transmitted to the resonant region, stabilizes the resonant frequency, and improves the frequency stability of the quartz oscillator.

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Abstract

The application discloses a crystal oscillator package structure, which comprises a package base, a resonant crystal sheet and a top cover. The top of the package base is provided with a groove, and the sidewall of the package base surrounds the groove. The resonant crystal sheet comprises a frame area, a U-shaped connecting area, a resonant area and a first connecting arm. The U-shaped connecting area is connected between the edge of the resonant area and the frame area, the notch of the U-shaped connecting area and the two mutually perpendicular inner sidewalls are directed to the resonant area, the first connecting arm is connected between the U-shaped connecting area and the frame area, and the frame area is arranged on the sidewall of the package base. The top cover is arranged on the frame area to shield the groove, the U-shaped connecting area, the resonant area and the first connecting arm. The U-shaped connecting area is formed between the frame area and the resonant area to avoid the transmission of external mechanical vibration or instantaneous impact to the resonant crystal sheet, and the resonant frequency is stabilized.
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Description

Technical Field

[0001] This invention relates to a packaging structure, and more particularly to a crystal oscillator packaging structure. Background Technology

[0002] Quartz elements have stable piezoelectric properties, providing accurate and wide-range reference frequencies, clock control, timing functions, and noise filtering. In addition, quartz elements can also be used as vibration and pressure sensors, as well as important optical components; therefore, quartz elements play a crucial role in electronic products.

[0003] Figure 1 This is a schematic diagram of a prior art quartz vibrator. Please refer to [link / reference needed]. Figure 1 The quartz vibrator 1 comprises a quartz vibrator element 10 and a first housing 11 and a second housing 12 covering the quartz vibrator element 10. The quartz vibrator element 10 is made of a quartz substrate. Excitation electrodes 13 and 14 are formed on the upper and lower surfaces of the quartz vibrator element 10, and the quartz vibrator element 10 has a main vibrating part and a support part surrounding the main vibrating part. The first housing 11 and the second housing 12 are made of, for example, a common glass such as blue plate glass. The first housing 11 and the second housing 12 each have protrusions formed on their periphery. The first housing 11 and the second housing 12 are joined to the support part at the protrusions, thereby clamping the quartz vibrator element 10 therebetween. Because the support part occupies a relatively large area of ​​the quartz vibrator element 10, external mechanical vibrations or instantaneous impacts are transmitted to the main vibrating part, causing the vibration frequency of the quartz vibrator 1 to be unstable.

[0004] Therefore, in order to address the above-mentioned problems, the present invention proposes a crystal oscillator packaging structure to solve the problems caused by the prior art. Summary of the Invention

[0005] This invention provides a crystal oscillator packaging structure that prevents external mechanical vibrations or instantaneous impacts from being transmitted to the resonant crystal chip and stabilizes the resonant frequency.

[0006] In one embodiment of the present invention, a crystal oscillator packaging structure is provided, comprising a packaging base, a resonant crystal chip, and a top cover. The top of the packaging base has a groove, and the sidewalls of the packaging base surround the groove. The resonant crystal chip includes a frame region, at least one U-shaped connection region, a resonant region, and at least one first connecting arm. The U-shaped connection region connects the edge of the resonant region to the frame region, and the notch of the U-shaped connection region and its two mutually perpendicular inner sidewalls face the resonant region. The first connecting arm connects the U-shaped connection region and the frame region. The frame region is disposed on the sidewall of the packaging base. The top cover is disposed on the frame region to shield the groove, the U-shaped connection region, the resonant region, and the first connecting arm.

[0007] In an embodiment of the present application, the crystal oscillator package structure further comprises a first electrode layer, a second electrode layer, a first sealing ring, a second sealing ring and a plurality of conductive pads. The first electrode layer is disposed on the bottom surface of the first connecting arm, the U-shaped connecting region and the resonant region, and electrically connected to the resonant region. The second electrode layer is disposed on the top surface of the first connecting arm, the U-shaped connecting region and the resonant region, and electrically connected to the resonant region. The first sealing ring is disposed between the sidewall of the package base and the frame region, the second sealing ring is disposed between the frame region and the top cover, and all the conductive pads are disposed on the bottom surface of the package base.

[0008] In an embodiment of the present application, the U-shaped connecting region comprises a second connecting arm, a third connecting arm and a fourth connecting arm. The second connecting arm has a first end and a second end, and the first end of the second connecting arm is connected to the edge of the resonant region. The third connecting arm has a third end and a fourth end, and the third end of the third connecting arm is connected to the second end of the second connecting arm, and the third connecting arm is connected to the second connecting arm perpendicularly. The fourth connecting arm has a fifth end and a sixth end, and the fifth end of the fourth connecting arm is connected to the fourth end of the third connecting arm, and the sixth end of the fourth connecting arm is connected to the first connecting arm, and the fourth connecting arm is connected to the third connecting arm and the first connecting arm perpendicularly. The notch is located between the second connecting arm and the fourth connecting arm, the third connecting arm and the fourth connecting arm have an inner sidewall facing the resonant region, and the fourth connecting arm overlaps the resonant region in an area located between a first straight line and a second straight line, the first straight line is parallel to the second straight line, the first straight line overlaps the edge of the resonant region, and the second straight line overlaps the side of the first connecting arm away from the fourth connecting arm.

[0009] In an embodiment of the present application, the resonant region is rectangular, the fourth connecting arm is parallel to the long side of the rectangle, the first straight line overlaps the short side of the rectangle close to the third connecting arm, the shortest distance between the first straight line and the second straight line is D1, the length of the long side is L, D1=L×C1, and 0

[0010] In an embodiment of the present application, the resonant region is rectangular, the fourth connecting arm is parallel to the short side of the rectangle, the first straight line overlaps the long side of the rectangle close to the third connecting arm, the shortest distance between the first straight line and the second straight line is D2, the length of the short side is W, D2=W×C2, and 0

[0011] In an embodiment of the present application, the resonant region is rectangular, the fourth connecting arm is parallel to the long side of the rectangle, the first straight line overlaps the short side of the rectangle close to the third connecting arm, the shortest distance between the first straight line and the second straight line is D1, the length of the long side is L, D1=L×C1, and 0

[0012] In one embodiment of the present invention, the resonant region is elliptical, the fourth connecting arm is parallel to the minor axis of the ellipse, the first straight line overlaps the position of the ellipse closest to the third connecting arm, the shortest distance between the first and second straight lines is D2, the length of the minor axis is W, and D2 = W × C2. <C2<1。

[0013] In one embodiment of the present invention, the resonant region is circular, the fourth connecting arm is parallel to the diameter of the circle, the first straight line overlaps the position of the circle closest to the third connecting arm, the shortest distance between the first and second straight lines is D, the length of the diameter is R, D = R × C, 0 <C<1。

[0014] In one embodiment of the present invention, at least one U-shaped connection region includes two U-shaped connection regions, at least one first connecting arm includes two first connecting arms, the two first connecting arms respectively connect the two U-shaped connection regions, and the two U-shaped connection regions are symmetrically arranged with the resonant region as the center.

[0015] In one embodiment of the present invention, the border area, the first connecting arm, the U-shaped connecting area and the resonant area are integrally formed.

[0016] Based on the above, the crystal oscillator packaging structure forms a U-shaped connection area between the frame area and the resonant area, and the notch of the U-shaped connection area and the two mutually perpendicular inner sidewalls face the resonant area to avoid external mechanical vibration or instantaneous impact from being transmitted to the resonant area and to stabilize the resonant frequency. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of a quartz vibrator in the prior art.

[0018] Figure 2 This is an exploded view of an embodiment of the crystal oscillator packaging structure of the present invention.

[0019] Figure 3 This is a cross-sectional view of an embodiment of the crystal oscillator packaging structure of the present invention.

[0020] Figures 4 to 10 This is a top view of the structure of various embodiments of the resonant crystal chip of the present invention.

[0021] Explanation of reference numerals in the attached drawings: 1-Quartz oscillator; 10-Quartz oscillator element; 11-First housing; 12-Second housing; 13-Excitation electrode; 14-Excitation electrode; 2-Crystal oscillator packaging structure; 20-Packaging base; 200-Groove; 21-Resonant crystal plate; 210-Frame area; 211-U-shaped connection area; 2111-Second connecting arm; 2112-Third connecting arm; 2113-Fourth connecting arm; 212-Resonant area; 213-First connecting arm; 22-Top cover; 23-First electrode layer; 24-Second electrode layer; 25-First sealing ring; 26-Second sealing ring; 27-Conductive pad. DETAILED DESCRIPTION

[0022] Embodiments of the present application will be described below in connection with associated drawings. Wherever possible, corresponding reference numbers are used throughout the drawings and the specification to indicate the same or similar components. In the drawings, the shape and thickness of components can be exaggerated for clarity. It will be understood that elements or materials other than those specifically shown and described herein can be employed in the construction and practice of the present application, without departing from the scope of the application. Those skilled in the art will recognize, or be able to ascertain using no more than routine experimentation, many equivalents to the specific embodiments described herein. It will be understood that such equivalents fall within the scope of the present application.

[0023] When an element is referred to as being "on" another element, it can be directly on the other element or intervening elements can be present therebetween. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0024] Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular element, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrase "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular

[0025] The invention is described in particular by way of the following examples, which are merely illustrative. Various modifications and refinements can be made by those skilled in the art without departing from the spirit and scope of this disclosure. Therefore, the scope of protection of this disclosure is determined by the claims. Throughout the specification and claims, unless explicitly stated otherwise, the words “a” and “described” include a description comprising “a or at least one” of the stated elements or components. Furthermore, as used herein, the singular article also includes a description of multiple elements or components unless clearly excluded from the specific context. Moreover, when applied in this description and throughout the claims, unless explicitly stated otherwise, “in which” can mean both “in which” and “therein”. The terms used throughout the specification and claims, unless otherwise specified, generally have their ordinary meaning in the art, in the context of the invention, and in the specific context. Certain terms used to describe the invention will be discussed below or elsewhere in this specification to provide additional guidance to practitioners in the description of the invention. Examples found anywhere in this specification, including examples of any terminology used herein, are for illustrative purposes only and do not limit the scope or meaning of the invention or any of the illustrative terms. Similarly, the invention is not limited to the various embodiments set forth in this specification.

[0026] Furthermore, the terms "electrical coupling" or "electrical connection" are used herein to include any direct and indirect electrical connection means. For example, if a first device is described as electrically coupled to a second device, it means that the first device can be directly connected to the second device, or indirectly connected to the second device through other devices or connection means. Additionally, in descriptions relating to the transmission or provision of electrical signals, those skilled in the art will understand that attenuation or other non-ideal variations may occur during the transmission of electrical signals, but unless otherwise specified, the source and receiver of the transmitted or provided electrical signal should be considered substantially the same signal. For example, if an electrical signal S is transmitted (or provided) from terminal A of an electronic circuit to terminal B of the same electronic circuit, a voltage drop may occur across the source and drain terminals of a transistor switch and / or possible stray capacitances. However, unless the purpose of this design is to intentionally utilize attenuation or other non-ideal variations during transmission (or provision) to achieve certain specific technical effects, the electrical signal S at terminals A and B of the electronic circuit should be considered substantially the same signal.

[0027] It is to be understood that the words "comprising," "including," "having," "containing," "involving," and similar expressions are to be construed in an open-ended fashion, i.e., as "including, but not limited to." Also, it is to be understood that any embodiment or claim not specifically stated in the application can include all features that are either expressly stated or inherently implied from the prior art. Further, the Abstract section and the Title section are provided herein solely for the assistance of the reader, and should not be used to construe the scope of the present application.

[0028] Figure 2 Structure exploded view of an embodiment of the crystal oscillator package structure of the present application. Figure 3 Structure cross-sectional view of an embodiment of the crystal oscillator package structure of the present application. Please refer to Figure 2 With Figure 3 The crystal oscillator package structure 2 of the present application is described as follows. The crystal oscillator package structure 2 includes a package base 20, a resonant crystal sheet 21 and a top cover 22. The top of the package base 20 has a recess 200, and the sidewall of the package base 20 surrounds the recess 200. The resonant crystal sheet 21 can be a quartz crystal sheet, which includes a frame region 210, at least one U-shaped connecting region 211, a resonant region 212 and at least one first connecting arm 213. The U-shaped connecting region 211 has a function of absorbing vibration, and the shape of the resonant region 212 is not limited. The U-shaped connecting region 211 connects between the edge of the resonant region 212 and the frame region 210, the notch of the U-shaped connecting region 211 and the two mutually perpendicular inner sidewalls face the resonant region 212, and the first connecting arm 213 connects between the U-shaped connecting region 211 and the frame region 210. The frame region 210 is arranged on the sidewall of the package base 20. In this embodiment, the number of the U-shaped connecting region 211 and the first connecting arm 213 is two, but the present application is not limited thereto. The frame region 210, the U-shaped connecting region 211, the resonant region 212 and the first connecting arm 213 can be integrally formed. The top cover 22 is arranged on the frame region 210 to shield the recess 200, the U-shaped connecting region 211, the resonant region 212 and the first connecting arm 213. Since the U-shaped connecting region 211 is formed between the frame region 210 and the resonant region 212, and the notch of the U-shaped connecting region 211 and the two mutually perpendicular inner sidewalls face the resonant region 212, the external mechanical vibration or instantaneous impact can be prevented from being transmitted to the resonant region 212, and the resonant frequency is stabilized.

[0029] In some embodiments of the present application, the crystal oscillator package structure 2 can further comprise a first electrode layer 23, a second electrode layer 24, a first sealing ring 25, a second sealing ring 26 and a plurality of conductive pads 27. The first electrode layer 23 is disposed on the bottom surface of the first connecting arm 213, the U-shaped connecting region 211 and the resonant region 212, and electrically connected to the resonant region 212. The second electrode layer 24 is disposed on the top surface of the first connecting arm 213, the U-shaped connecting region 211 and the resonant region 212, and electrically connected to the resonant region 212. The first sealing ring 25 is disposed between the sidewall of the package base 20 and the frame region 210, the second sealing ring 26 is disposed between the frame region 210 and the top cover 22, and all the conductive pads 27 are disposed on the bottom surface of the package base 20.

[0030] Figures 4 to 10 Fig. 1 is a structural top view of various embodiments of the resonant crystal wafer of the present application. The following describes various embodiments of the resonant crystal wafer 21.

[0031] Please refer to Figure 4 and Figure 5 . As shown in Figure 4 , the number of U-shaped connecting regions 211 is two, and the number of first connecting arms 213 is two, wherein the two first connecting arms 213 are respectively connected to the two U-shaped connecting regions 211, and the two U-shaped connecting regions 211 are symmetrically arranged with the resonant region 212 as the center. As shown in Figure 5As shown, the number of U-shaped connection regions 211 is one. Each U-shaped connection region 211 includes a second connecting arm 2111, a third connecting arm 2112, and a fourth connecting arm 2113. The second connecting arm 2111 has a first end and a second end, and the first end of the second connecting arm 2111 is connected to the edge of the resonant region 212. The third connecting arm 2112 has a third end and a fourth end, the third end of the third connecting arm 2112 is connected to the second end of the second connecting arm 2111, and the third connecting arm 2112 is perpendicularly connected to the second connecting arm 2111. The fourth connecting arm 2113 has a fifth end and a sixth end, the fifth end of the fourth connecting arm 2113 is connected to the fourth end of the third connecting arm 2112, and the sixth end of the fourth connecting arm 2113 is connected to the first connecting arm 213. The fourth connecting arm 2113 is perpendicularly connected to the third connecting arm 2112 and the first connecting arm 213. The notch of the U-shaped connection region 211 is located between the second connecting arm 2111 and the fourth connecting arm 2113. The third connecting arm 2112 and the fourth connecting arm 2113 have inner sidewalls facing the resonant region 212. The fourth connecting arm 2113 and the resonant region 212 jointly overlap a region, which is located between a first straight line L1 and a second straight line L2. The first straight line L1 is parallel to the second straight line L2. The first straight line L1 overlaps the edge of the resonant region 212, and the second straight line L2 overlaps the side of the first connecting arm 213 away from the fourth connecting arm 2113. For example, the resonant region 212 can be rectangular. The fourth connecting arm 2113 is parallel to the long side of this rectangle. The first straight line L1 overlaps the short side of this rectangle and is close to the third connecting arm 2112. The shortest distance between the first straight line L1 and the second straight line L2 is D1, and the length of the long side of this rectangle is L. In order to utilize the U-shaped connection region 211 to absorb most of the vibrations and avoid external vibrations from affecting the resonant region 212, D1 = L×C1, where 0 < C1 < 1.

[0032] Please refer to Figure 6 and Figure 7 . As Figure 6 shown, the number of U-shaped connection regions 211 is two. As Figure 7 shown, the number of U-shaped connection regions 211 is one. And Figure 4 and Figure 5 the difference lies in that Figure 6 and Figure 7 the fourth connecting arm 2113 of is parallel to the short side of the rectangle of the resonant region 212. The first straight line L1 overlaps the long side of this rectangle and is close to the third connecting arm 2112. The shortest distance between the first straight line L1 and the second straight line L2 is D2, and the length of the short side of this rectangle is W. In order to utilize the U-shaped connection region 211 to absorb most of the vibrations and avoid external vibrations from affecting the resonant region 212, D2 = W×C2, where 0 < C2 < 1.

[0033] Please refer to Figure 8 . As Figure 8As shown, the number of U-shaped connection regions 211 is one. And Figure 7 The difference is that Figure 8 the resonant region 212 of Figure 8 can be oval, the fourth connecting arm 2113 is parallel to the long axis of this oval, the first straight line L1 overlaps the position of this oval closest to the third connecting arm 2112, the shortest distance between the first straight line L1 and the second straight line L2 is D1, and the length of the long axis of this oval is L. In order to utilize the U-shaped connection region 211 to absorb most of the vibrations and avoid external vibrations from affecting the resonant region 212, D1 = L × C1, where 0 < C1 < 1.

[0034] Please refer to Figure 9 . As Figure 9 shown, the number of U-shaped connection regions 211 is one, and the resonant region 212 can be oval. And Figure 8 The difference is that Figure 9 the fourth connecting arm 2113 of Figure 9 is parallel to the short axis of this oval, the first straight line L1 overlaps the position of the oval closest to the third connecting arm 2112, the shortest distance between the first straight line L1 and the second straight line L2 is D2, and the length of the short axis of the oval is W. In order to utilize the U-shaped connection region 211 to absorb most of the vibrations and avoid external vibrations from affecting the resonant region 212, D2 = W × C2, where 0 < C < 1.

[0035] Please refer to Figure 10 . As Figure 10 shown, the number of U-shaped connection regions 211 is one. And Figure 9 The difference is that Figure 10 the resonant region 212 of Figure 10 can be circular, the fourth connecting arm 2113 is parallel to the diameter of this circle, the first straight line L1 overlaps the position of this circle closest to the third connecting arm 2112, the shortest distance between the first straight line L1 and the second straight line L2 is D, and the length of the diameter of this circle is R. In order to utilize the U-shaped connection region 211 to absorb most of the vibrations and avoid external vibrations from affecting the resonant region 212, D = R × C, where 0 < C < 1.

[0036] According to the above embodiments, the crystal oscillator package structure forms a U-shaped connection region between the frame region and the resonant region, and the notch of the U-shaped connection region and two inner sidewalls perpendicular to each other face the resonant region, so as to prevent external mechanical vibrations or instantaneous impacts from being transmitted to the resonant region and stabilize the resonant frequency.

[0037] The above is only a preferred embodiment of the present invention, and is not used to limit the scope of implementation of the present invention. Therefore, all equivalent changes and modifications made according to the shape, structure, features and spirit described in the present invention should be included within the scope of the present invention.

Claims

1. A crystal oscillator packaging structure, characterized in that, The package includes: a package base having a top with a recess, a sidewall of the package base surrounding the recess; a resonator die including a frame region, at least one U-shaped connecting region connecting between an edge of a resonator region and the frame region, the at least one U-shaped connecting region having a notch and two mutually perpendicular inner sidewalls facing the resonator region, at least one first connecting arm connecting between the at least one U-shaped connecting region and the frame region, the frame region being disposed on the sidewall of the package base; a top cover disposed on the frame region to shield the recess, the at least one U-shaped connecting region, the resonator region, and the at least one first connecting arm; a first electrode layer disposed on a bottom surface of the at least one first connecting arm, the at least one U-shaped connecting region, and the resonator region, the first electrode layer being electrically connected to the resonator region; a second electrode layer disposed on a top surface of the at least one first connecting arm, the at least one U-shaped connecting region, and the resonator region, the second electrode layer being electrically connected to the resonator region; a first sealing ring disposed between the sidewall of the package base and the frame region; a second sealing ring disposed between the frame region and the top cover; and a plurality of conductive pads disposed on a bottom surface of the package base. The at least one U-shaped connecting region includes: a second connecting arm having a first end and a second end, the first end connecting the edge of the resonator region; a third connecting arm having a third end and a fourth end, the third end connecting the second end, the third connecting arm being perpendicular to the second connecting arm; and a fourth connecting arm having a fifth end and a sixth end, the fifth end connecting the fourth end, the sixth end connecting the first connecting arm, the fourth connecting arm being perpendicular to the third connecting arm and the first connecting arm, the notch being between the second connecting arm and the fourth connecting arm, the third connecting arm and the fourth connecting arm having inner sidewalls facing the resonator region, the fourth connecting arm overlapping the resonator region in an area between a first straight line and a second straight line, the first straight line being parallel to the second straight line, the first straight line overlapping a short side of the resonator region close to the third connecting arm, the second straight line overlapping a side of the first connecting arm away from the fourth connecting arm. The resonator region is rectangular, the fourth connecting arm is parallel to a long side of the rectangular, the first straight line overlaps a short side of the rectangular close to the third connecting arm, a shortest distance between the first straight line and the second straight line is D1, a length of the long side is L, D1 = L × C1, 0 < C1 < 1.

2. The crystal unit package structure as claimed in claim 1, wherein The resonator region is rectangular, the fourth connecting arm is parallel to a short side of the rectangular, the first straight line overlaps a long side of the rectangular close to the third connecting arm, a shortest distance between the first straight line and the second straight line is D2, a length of the short side is W, D2 = W × C2, 0 < C2 < 1.

3. The crystal unit package structure as claimed in claim 1, wherein ​ 4. The crystal unit package structure as claimed in claim 1, wherein The resonant area is an ellipse, the fourth connecting arm is parallel to the long axis of the ellipse, the first straight line overlaps the position of the ellipse closest to the third connecting arm, the shortest distance between the first straight line and the second straight line is D1, the length of the long axis is L, D1=LxC1, 0 5. The crystal unit package structure as claimed in claim 1, wherein The resonant area is an ellipse, the fourth connecting arm is parallel to the long axis of the ellipse, the first straight line overlaps the position of the ellipse closest to the third connecting arm, the shortest distance between the first straight line and the second straight line is D1, the length of the long axis is L, D1=LxC1, 0 6. The crystal unit package structure as claimed in claim 1, wherein The resonant area is a circle, the fourth connecting arm is parallel to the diameter of the circle, the first straight line overlaps the position of the circle closest to the third connecting arm, the shortest distance between the first straight line and the second straight line is D, the length of the diameter is R, D=RxC, 0 7. The crystal unit package structure as claimed in claim 1, wherein The frame area, the at least one first connecting arm, the at least one U-shaped connecting area and the resonant area are integrally formed.

Citation Information

Patent Citations

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