Optimization Method, Device and Equipment for Heat Dissipation Performance of Copper Column Structure

Abstract

The present application relates to the field of semiconductor technologies, and discloses a method, device and equipment for optimizing the heat dissipation performance of a copper pillar structure. The method, device and storage medium for optimizing the heat dissipation performance analyze and compare the heat dissipation performances of various values of the parameters to be optimized by taking the area of the copper pillars, the thickness of the copper pillars and the thickness of the aluminum heat sink in the copper pillar structure as the parameters to be optimized, so as to determine the optimized values of the parameters to be optimized, realize the optimized design of the copper pillar structure, and enable the copper pillar structure designed with the optimized values to achieve the optimization of the heat dissipation performance under the condition of meeting the requirements of the package structure size. The method is simple and convenient.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and particularly to a method, device and equipment for optimizing the heat dissipation performance of a copper pillar structure. Background Art

[0002] For high-power chips, heat dissipation is an urgent problem to be solved. When dissipating heat from a chip, a copper pillar passive heat transfer solution is often used for heat dissipation. The copper pillar passive heat transfer solution means that copper pillars are arranged on the chip. This solution has a simple structure, is easy to install, and has a low processing cost. Since copper has excellent heat absorption performance, it can quickly absorb the heat of the chip to the copper pillars. However, due to the poor heat dissipation performance of the copper pillars, a fan needs to be set up to dissipate heat well to the outside.

[0003] To better dissipate heat, related technologies provide a copper pillar structure. On the basis of the copper pillar passive heat transfer solution, this structure further adds an aluminum heat sink with good heat dissipation performance, and rolls the aluminum heat sink together with the copper pillars, so as to dissipate the heat absorbed by the copper pillars through the aluminum heat sink. Due to the addition of the aluminum heat sink, this structure further restricts the miniaturization of chip packaging. In order to achieve better heat dissipation performance under the condition of meeting the requirements of the chip packaging structure size, it is necessary to optimize the structural parameters.

[0004] Application content

[0005] Therefore, the purpose of the embodiments of the present application is to provide a method, device and equipment for optimizing the heat dissipation performance of a copper pillar structure, and solve the problem of achieving better heat dissipation performance of the copper pillar structure under the condition of meeting the requirements of the chip packaging structure size.

[0006] To achieve the above object, the present application adopts the following technical solutions:

[0007] The first aspect of the present application provides a method for optimizing the heat dissipation performance of a copper pillar structure, and the method includes:

[0008] The copper pillar structure includes copper pillars arranged on a chip and aluminum heat sinks rolled together with the copper pillars and having the same area. The method includes the following steps:

[0009] S1: Divide the factors affecting the heat dissipation performance of the copper pillar structure into parameters to be optimized and other factors. The parameters to be optimized include the copper pillar area, copper pillar thickness, and aluminum heat sink thickness;

[0010] S2: Establish a heat transfer model of the copper pillar structure;

[0011] S3: Keep the remaining factors unchanged, set the copper pillar area in the heat transfer model to the corresponding initial design value, change the copper pillar thickness and the aluminum heat sink thickness within the design value range, obtain the chip temperature field simulation results corresponding to different copper pillar thicknesses and aluminum heat sink thicknesses, and based on the chip temperature field simulation results, obtain the copper pillar thickness and aluminum heat sink thickness that result in the best heat dissipation performance, which are the optimal values of the copper pillar thickness and the aluminum heat sink thickness;

[0012] S4: If the highest temperature shown in the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness is not higher than the rated design temperature of the chip, output the optimal value of the copper pillar thickness, the optimal value of the aluminum heat sink thickness, and the corresponding initial design value of the copper pillar area.

[0013] According to an implementable manner of the first aspect of the present application, the method further includes:

[0014] When the highest temperature shown in the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness is higher than the rated design temperature of the chip, keep the remaining factors unchanged, keep the copper pillar thickness in the heat transfer model as the optimal value of the copper pillar thickness, keep the aluminum heat sink thickness as the optimal value of the aluminum heat sink thickness, and gradually increase the copper pillar area in the heat transfer model until the highest temperature shown in the corresponding chip temperature field simulation results is not higher than the rated design temperature of the chip, or the copper pillar area has been increased to the maximum value in the corresponding design value range, and output the current copper pillar area.

[0015] According to an implementable manner of the first aspect of the present application, the gradually increasing the copper pillar area in the heat transfer model includes:

[0016] Calculate the difference between the highest temperature shown in the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness and the rated design temperature;

[0017] When the difference is less than the temperature difference threshold, gradually increase the copper pillar area starting from the corresponding initial design value of the copper pillar area. When the difference is not less than the temperature difference threshold, gradually increase the copper pillar area starting from the reference value of the copper pillar area, and the reference value is greater than the corresponding initial design value of the copper pillar area.

[0018] According to an implementable manner of the first aspect of the present application, the reference value of the copper pillar area is determined according to the following formula:

[0019]

[0020] In the formula, S represents the parameter adjustment ratio, T maxDenote the highest temperature shown by the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness, T C Denote the rated design temperature, D T Denote the temperature difference threshold, S min Denote the corresponding initial design value of the copper pillar area.

[0021] The second aspect of the present application provides a device for optimizing the heat dissipation performance of a copper pillar structure. The copper pillar structure includes copper pillars disposed on a chip and aluminum heat sinks rolled together with the copper pillars and having the same area. The device includes:

[0022] A parameter setting module for dividing the factors affecting the heat dissipation performance of the copper pillar structure into parameters to be optimized and other factors. The parameters to be optimized include the copper pillar area, the copper pillar thickness, and the aluminum heat sink thickness;

[0023] A model simulation module for establishing a heat transfer model of the copper pillar structure;

[0024] A parameter optimization module for keeping the other factors unchanged, setting the copper pillar area in the heat transfer model to the corresponding initial design value, changing the copper pillar thickness and the aluminum heat sink thickness within the design value range, obtaining the chip temperature field simulation results corresponding to different copper pillar thicknesses and aluminum heat sink thicknesses, and obtaining the copper pillar thickness and the aluminum heat sink thickness that result in the best heat dissipation performance according to the chip temperature field simulation results, which are the optimal values of the copper pillar thickness and the aluminum heat sink thickness;

[0025] An output module for outputting the optimal value of the copper pillar thickness, the optimal value of the aluminum heat sink thickness, and the corresponding initial design value of the copper pillar area when the highest temperature shown by the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness is not higher than the rated design temperature of the chip.

[0026] According to an implementable manner of the second aspect of the present application, the parameter optimization module is further configured to, when the highest temperature shown by the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness is higher than the rated design temperature of the chip, keep the other factors unchanged, keep the copper pillar thickness in the heat transfer model as the optimal value of the copper pillar thickness, keep the aluminum heat sink thickness as the optimal value of the aluminum heat sink thickness, and gradually increase the copper pillar area in the heat transfer model until the highest temperature shown by the corresponding chip temperature field simulation results is not higher than the rated design temperature of the chip, or the copper pillar area has increased to the maximum value in the corresponding design value range;

[0027] The output module is further configured to output the current copper pillar area when the maximum temperature shown in the chip temperature field simulation result is not higher than the rated design temperature of the chip, or when the copper pillar area has been increased to the maximum value within the corresponding design value range.

[0028] According to an implementable manner of the second aspect of the present application, the parameter optimization module specifically includes:

[0029] A calculation unit, configured to calculate the difference between the maximum temperature shown in the chip temperature field simulation result corresponding to the optimal value of the copper pillar thickness and the optimal value of the aluminum heat sink thickness and the rated design temperature;

[0030] A parameter adjustment unit, configured to gradually increase the copper pillar area starting from the corresponding initial design value of the copper pillar area when the difference is less than the temperature difference threshold, and gradually increase the copper pillar area starting from a reference value of the copper pillar area when the difference is not less than the temperature difference threshold, where the reference value is greater than the corresponding initial design value of the copper pillar area.

[0031] According to an implementable manner of the second aspect of the present application, the reference value of the copper pillar area is determined according to the following formula:

[0032]

[0033] In the formula, S represents the parameter adjustment ratio, T max represents the maximum temperature shown in the chip temperature field simulation result corresponding to the optimal value of the copper pillar thickness and the optimal value of the aluminum heat sink thickness, T C represents the rated design temperature, D T represents the temperature difference threshold, S min represents the corresponding initial design value of the copper pillar area.

[0034] An embodiment of the third aspect of the present application provides a computer device, which includes a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor. When the processor executes the computer program, it implements the heat dissipation performance optimization method of the copper pillar structure as described in any one of the above embodiments.

[0035] An embodiment of the fourth aspect of the present application provides a computer-readable storage medium, in which a computer program is stored, and when the computer program is executed, it implements the heat dissipation performance optimization method of the copper pillar structure as described in any one of the above embodiments.

[0036] Compared with the prior art, the present application has at least the following beneficial technical effects:

[0037] In the above embodiments of the present application, by taking the copper column area, copper column thickness, and aluminum heat sink thickness in the copper column structure as parameters to be optimized, analyzing and comparing the heat dissipation performance of various values of the parameters to be optimized by establishing a heat transfer model, and determining the optimized values of each parameter to be optimized, the optimized design of the copper column structure is achieved. The copper column structure designed with the optimized values can optimize the heat dissipation performance while meeting the requirements of the package structure size, and the method is simple and convenient. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 FIG. is a schematic flow chart of an alternative embodiment of a method for optimizing the heat dissipation performance of a copper column structure provided by the present application;

[0039] Figure 2 FIG. is a schematic structural connection diagram of an alternative embodiment of a device for optimizing the heat dissipation performance of a copper column structure provided by the present application.

[0040] REFERENCE SIGNS:

[0041] 1, parameter setting module; 2, model simulation module; 3, parameter optimization module; 4, output module. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0042] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts shall fall within the protection scope of the present application.

[0043] Figure 1 FIG. shows a schematic flow chart of an alternative embodiment of a method for optimizing the heat dissipation performance of a copper column structure provided by the present application.

[0044] Among them, the copper column structure includes a copper column disposed on a chip and an aluminum heat sink rolled together with the copper column and having the same area. As Figure 1 shown, the method includes the following steps:

[0045] S1: Divide the factors affecting the heat dissipation performance of the copper column structure into parameters to be optimized and other factors. The parameters to be optimized include the copper column area, copper column thickness, and aluminum heat sink thickness;

[0046] S2: Establish a heat transfer model of the copper column structure;

[0047] S3: Keep the remaining factors unchanged, set the copper pillar area in the heat transfer model to the corresponding initial design value, change the copper pillar thickness and the aluminum heat sink thickness within the design value range, obtain the chip temperature field simulation results corresponding to different copper pillar thicknesses and aluminum heat sink thicknesses, and based on the chip temperature field simulation results, obtain the copper pillar thickness and aluminum heat sink thickness that result in the best heat dissipation performance, which are the optimal values of the copper pillar thickness and the aluminum heat sink thickness;

[0048] S4: If the highest temperature shown in the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness is not higher than the rated design temperature of the chip, output the optimal value of the copper pillar thickness, the optimal value of the aluminum heat sink thickness, and the corresponding initial design value of the copper pillar area.

[0049] The embodiment of the present application realizes the optimal design of the copper pillar structure parameters, can optimize the heat dissipation performance of this heat dissipation structure while meeting the requirements of the package structure size, and the method is simple and convenient.

[0050] The method for evaluating the heat dissipation performance is as follows: Based on the highest temperature and the average temperature shown in the chip temperature field simulation results, if the highest temperature and the average temperature are low, it is evaluated that the heat dissipation performance is good, otherwise the heat dissipation performance is poor.

[0051] Specifically, if the highest temperature shown in the first chip temperature field simulation results is greater than the highest temperature shown in the second chip temperature field simulation results, it is determined that the heat dissipation performance corresponding to the second chip temperature field simulation results is better; if the highest temperature shown in the first chip temperature field simulation results is equal to the highest temperature shown in the second chip temperature field simulation results, a comparison of the average temperatures is made. If the average temperature shown in the first chip temperature field simulation results is greater than the average temperature shown in the second chip temperature field simulation results, it is determined that the heat dissipation performance corresponding to the second chip temperature field simulation results is better.

[0052] Among them, the design value range of each parameter to be optimized can be preset, and a design value can be selected as its corresponding initial design value according to the design value range of the copper pillar area. As a preference, the minimum value in the design value range of the copper pillar area can be selected as its corresponding initial design value.

[0053] Among them, when setting the design value range of each parameter to be optimized, the maximum area of the copper pillar can be determined according to the area of the chip. As an alternative embodiment, the maximum value in the corresponding design value range of the copper pillar area is equal to the area of the chip.

[0054] Among them, the maximum thickness of the copper pillar structure is determined according to the design size requirements of the chip package. Furthermore, it is set that the sum of the maximum value in the corresponding design value range of the copper pillar thickness and the maximum value in the corresponding design value range of the aluminum heat sink thickness shall not exceed this maximum thickness. As an optional embodiment, the sum of the maximum value in the corresponding design value range of the copper pillar thickness and the maximum value in the corresponding design value range of the aluminum heat sink thickness is equal to this maximum thickness.

[0055] The minimum values of the copper pillar area, copper pillar thickness, and aluminum heat sink thickness can be reasonably set in combination with factors such as manufacturing process difficulty and cost.

[0056] Among them, in step S2, a thermal analysis software is used to numerically simulate the temperature field and the surrounding flow field of the heat transfer model with each optimized parameter adjusted, so as to obtain the chip temperature field simulation result. This thermal analysis software can be any one of Ansys, fluent, Icepak, FloEFD, FloTherm, and this embodiment is not limited thereto.

[0057] To obtain the chip temperature field simulation results corresponding to different copper pillar thicknesses and aluminum heat sink thicknesses, the following adjustment steps can be adopted:

[0058] S21: Fix the copper pillar thickness at the minimum value in the corresponding design value range, and change the aluminum heat sink thickness within the design value range to obtain the chip temperature field simulation results corresponding to different aluminum heat sink thicknesses at the current copper pillar thickness;

[0059] S22: Increase the copper pillar thickness within the design value range, keep the increased copper pillar thickness unchanged, and change the aluminum heat sink thickness within the design value range to obtain the chip temperature field simulation results corresponding to different aluminum heat sink thicknesses at the current copper pillar thickness;

[0060] S23: Repeat step S22 until the copper pillar thickness can no longer be increased.

[0061] Among them, the way to increase the copper pillar thickness can be: the copper pillar thickness is increased in increments of 0.5 times the minimum value of the increased copper pillar thickness. This embodiment is not limited thereto.

[0062] In some embodiments, the method further includes:

[0063] When the highest temperature shown in the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness is higher than the rated design temperature of the chip, while keeping the remaining factors unchanged, maintaining the copper pillar thickness in the heat transfer model at the optimal value of the copper pillar thickness and the aluminum heat sink thickness at the optimal value of the aluminum heat sink thickness, gradually increasing the copper pillar area in the heat transfer model until the highest temperature shown in the corresponding chip temperature field simulation results is not higher than the rated design temperature of the chip, or the copper pillar area has been increased to the maximum value in the corresponding design value range, and outputting the current copper pillar area.

[0064] When the parameter optimization scheme corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness in the embodiments of the present invention cannot meet the heat dissipation requirements, the heat dissipation performance is further optimized by adjusting the copper pillar area. The embodiments of the present invention can obtain the minimum copper pillar area that can meet the heat dissipation performance requirements under the condition of meeting the package structure size requirements, which is beneficial to saving material costs.

[0065] In some embodiments, the gradually increasing the copper pillar area in the heat transfer model includes:

[0066] Calculating the difference between the highest temperature shown in the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness and the rated design temperature;

[0067] When the difference is less than the temperature difference threshold, gradually increase the copper pillar area starting from the corresponding initial design value of the copper pillar area. When the difference is not less than the temperature difference threshold, gradually increase the copper pillar area starting from the reference value of the copper pillar area, and the reference value is greater than the corresponding initial design value of the copper pillar area.

[0068] Wherein, the temperature difference threshold is a preset threshold. As an optional embodiment, the value range of the temperature difference threshold is 3% - 5% of the rated design temperature.

[0069] In some embodiments, the reference value of the copper pillar area is determined according to the following formula:

[0070]

[0071] In the formula, S represents the parameter adjustment ratio, T max represents the highest temperature shown in the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness, T C represents the rated design temperature, D T represents the temperature difference threshold, S min represents the corresponding initial design value of the copper pillar area.

[0072] According to the difference between the highest temperature and the rated design temperature, the starting value of the copper column area adjustment is determined in the above embodiments of the present invention, which can improve the efficiency of parameter optimization.

[0073] An embodiment of the second aspect of the present application provides a device for optimizing the heat dissipation performance of a copper column structure.

[0074] Figure 2 The figure shows a schematic structural diagram of an optional embodiment of the device for optimizing the heat dissipation performance of the copper column structure provided by the present application, and the device can implement all the processes of the method for optimizing the heat dissipation performance of the copper column structure described in any of the above embodiments.

[0075] Among them, the copper column structure includes copper columns arranged on the chip and aluminum heat sinks rolled together with the copper columns and having the same area; as Figure 2 shown, the device includes:

[0076] A parameter setting module 1 for dividing the factors affecting the heat dissipation performance of the copper column structure into parameters to be optimized and other factors, where the parameters to be optimized include the copper column area, the copper column thickness, and the aluminum heat sink thickness, and setting the design value ranges of the respective parameters to be optimized;

[0077] A model simulation module 2 for establishing a heat transfer model of the copper column structure;

[0078] A parameter optimization module 3 for keeping the other factors unchanged, setting the copper column area in the heat transfer model to the corresponding initial design value, changing the copper column thickness and the aluminum heat sink thickness within the design value range, obtaining the chip temperature field simulation results corresponding to different copper column thicknesses and aluminum heat sink thicknesses, and obtaining the copper column thickness and the aluminum heat sink thickness that result in the best heat dissipation performance according to the chip temperature field simulation results, which are the optimal values of the copper column thickness and the optimal value of the aluminum heat sink thickness;

[0079] An output module 4 for outputting the optimal value of the copper column thickness, the optimal value of the aluminum heat sink thickness, and the corresponding initial design value of the copper column area when the highest temperature shown in the chip temperature field simulation results corresponding to the optimal value of the copper column thickness and the optimal value of the aluminum heat sink thickness is not higher than the rated design temperature of the chip.

[0080] In some embodiments, the parameter optimization module 3 is further configured to:

[0081] When the highest temperature shown in the chip temperature field simulation results corresponding to the optimal value of the copper pillar thickness and the optimal value of the aluminum heat sink thickness is higher than the rated design temperature of the chip, while keeping the remaining factors unchanged, keep the copper pillar thickness in the heat transfer model as the optimal value of the copper pillar thickness, keep the aluminum heat sink thickness as the optimal value of the aluminum heat sink thickness, and gradually increase the copper pillar area in the heat transfer model until the highest temperature shown in the corresponding chip temperature field simulation results is not higher than the rated design temperature of the chip, or the copper pillar area has been increased to the maximum value in the corresponding design value range;

[0082] The output module 4 is further configured to output the current copper pillar area when the highest temperature shown in the chip temperature field simulation results is not higher than the rated design temperature of the chip, or the copper pillar area has been increased to the maximum value in the corresponding design value range.

[0083] In some embodiments, the parameter optimization module 3 includes:

[0084] A calculation unit, configured to calculate the difference between the highest temperature shown in the chip temperature field simulation results corresponding to the optimal value of the copper pillar thickness and the optimal value of the aluminum heat sink thickness and the rated design temperature;

[0085] A parameter adjustment unit, configured to gradually increase the copper pillar area starting from the corresponding initial design value of the copper pillar area when the difference is less than the temperature difference threshold, and gradually increase the copper pillar area starting from the reference value of the copper pillar area when the difference is not less than the temperature difference threshold, where the reference value is greater than the corresponding initial design value of the copper pillar area.

[0086] In some embodiments, the reference value of the copper pillar area is determined according to the following formula:

[0087]

[0088] In the formula, S represents the parameter adjustment ratio, T max represents the highest temperature shown in the chip temperature field simulation results corresponding to the optimal value of the copper pillar thickness and the optimal value of the aluminum heat sink thickness, T C represents the rated design temperature, D T represents the temperature difference threshold, S min represents the corresponding initial design value of the copper pillar area.

[0089] The functions and implementation manners of the modules in the above embodiments of the device of the present application are the same as those in the embodiments of the above method for optimizing the heat dissipation performance of a copper pillar structure. For specific analysis, reference can be made to the embodiments of the above method for optimizing the heat dissipation performance of a copper pillar structure. To avoid repetition, it will not be elaborated here.

[0090] The present application also provides a computer device, which includes a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor. When the processor executes the computer program, it implements the method for optimizing the heat dissipation performance of the copper pillar structure as described in any one of the above embodiments.

[0091] The present application also provides a computer-readable storage medium, in which a computer program is stored. When the computer program is executed, it implements the method for optimizing the heat dissipation performance of the copper pillar structure as described in any one of the above embodiments.

[0092] The so-called processor may be a central processing unit (CPU), or may also be other general-purpose processors, digital signal processors (DSPs), application specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc. The processor is the control center of the device for optimizing the heat dissipation performance of the copper pillar structure, and connects various parts of the device for optimizing the heat dissipation performance of the copper pillar structure through various interfaces and lines.

[0093] The memory can be used to store the computer program and / or modules. By running or executing the computer program and / or modules stored in the memory, and by calling the data stored in the memory, the processor realizes various functions of the device for optimizing the heat dissipation performance of the copper pillar structure. The memory mainly includes a program storage area and a data storage area. Among them, the program storage area can store an operating device, application programs required for at least one function (such as a sound playback function, an image playback function, etc.); the data storage area can store data created according to the use of the mobile phone (such as audio data, phone book, etc.). In addition, the memory may include high-speed random access memory, and may also include non-volatile memory, such as a hard disk, a memory, a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card, at least one magnetic disk storage device, a flash memory device, or other volatile solid-state storage devices.

[0094] Among them, if the modules / units integrated in the heat dissipation performance optimization device of the copper pillar structure are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on such an understanding, to implement all or part of the processes in the above-mentioned embodiment methods of this application, it can also be completed by instructing relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium. When the computer program is executed by a processor, the steps of the above-mentioned various method embodiments can be implemented. Among them, the computer program includes computer program code, and the computer program code can be in the form of source code, object code, executable file or some intermediate form, etc. The computer-readable medium can include: any entity or device that can carry the computer program code, recording medium, USB flash drive, mobile hard disk, magnetic disk, optical disk, computer memory, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), electrical carrier signal, telecommunication signal, and software distribution medium, etc.

[0095] The above are the optional implementation manners of this application. It should be noted that for those of ordinary skill in the art of this technology, without departing from the principle of this application, several improvements and refinements can be made, and these improvements and refinements are also regarded as the protection scope of this application.

Claims

1. A method for optimizing the heat dissipation performance of a copper column structure, characterized in that, The method includes the following steps: Divide the factors affecting the heat dissipation performance of the copper pillar structure into parameters to be optimized and other factors, where the parameters to be optimized include the copper pillar area, copper pillar thickness, and aluminum heat sink thickness; Establish a heat transfer model of the copper pillar structure; Keep the other factors unchanged, set the copper pillar area in the heat transfer model to the corresponding initial design value, change the copper pillar thickness and aluminum heat sink thickness within the design value range, obtain the chip temperature field simulation results corresponding to different copper pillar thicknesses and aluminum heat sink thicknesses, and obtain the copper pillar thickness and aluminum heat sink thickness that result in the best heat dissipation performance according to the chip temperature field simulation results, which are the optimal values of the copper pillar thickness and the optimal value of the aluminum heat sink thickness; If the highest temperature shown in the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness is not higher than the rated design temperature of the chip, output the optimal value of the copper pillar thickness, the optimal value of the aluminum heat sink thickness, and the corresponding initial design value of the copper pillar area; When the highest temperature shown in the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness is higher than the rated design temperature of the chip, keep the other factors unchanged, keep the copper pillar thickness in the heat transfer model as the optimal value of the copper pillar thickness, keep the aluminum heat sink thickness as the optimal value of the aluminum heat sink thickness, and gradually increase the copper pillar area in the heat transfer model until the highest temperature shown in the corresponding chip temperature field simulation results is not higher than the rated design temperature of the chip, or the copper pillar area has been increased to the maximum value in the corresponding design value range, and output the current copper pillar area; The gradually increasing the copper pillar area in the heat transfer model includes: Calculate the difference between the highest temperature shown in the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness and the rated design temperature; When the difference is less than the temperature difference threshold, gradually increase the copper pillar area starting from the corresponding initial design value of the copper pillar area. When the difference is not less than the temperature difference threshold, gradually increase the copper pillar area starting from the reference value of the copper pillar area, where the reference value is greater than the corresponding initial design value of the copper pillar area; The reference value of the copper pillar area is determined according to the following formula: In the formula, S represents the parameter adjustment ratio, and T max represents the highest temperature shown in the chip temperature field simulation results corresponding to the optimal values of the copper pillar thickness and the aluminum heat sink thickness, and T C represents the rated design temperature, D T represents the temperature difference threshold, S min represents the corresponding initial design value of the copper pillar area.

2. A heat dissipation performance optimization device with a copper column structure, characterized in that, The device includes: A parameter setting module for dividing the factors affecting the heat dissipation performance of the copper pillar structure into parameters to be optimized and other factors, where the parameters to be optimized include the copper pillar area, copper pillar thickness, and aluminum heat sink thickness; A model simulation module for establishing a heat transfer model of the copper pillar structure; A parameter optimization module for keeping the other factors unchanged, setting the copper pillar area in the heat transfer model to the corresponding initial design value, changing the copper pillar thickness and aluminum heat sink thickness within the design value range, obtaining the chip temperature field simulation results corresponding to different copper pillar thicknesses and aluminum heat sink thicknesses, and obtaining the copper pillar thickness and aluminum heat sink thickness that result in the best heat dissipation performance according to the chip temperature field simulation results, which are the optimal values of the copper pillar thickness and the optimal value of the aluminum heat sink thickness; An output module, configured to output the corresponding initial design values of the optimal copper pillar thickness, the optimal aluminum heat sink thickness, and the copper pillar area when the maximum temperature shown in the chip temperature field simulation results corresponding to the optimal copper pillar thickness and the optimal aluminum heat sink thickness is not higher than the rated design temperature of the chip; When the maximum temperature shown in the chip temperature field simulation results corresponding to the optimal copper pillar thickness and the optimal aluminum heat sink thickness is higher than the rated design temperature of the chip, the parameter optimization module is further configured to keep the remaining factors unchanged, keep the copper pillar thickness in the heat transfer model as the optimal copper pillar thickness, keep the aluminum heat sink thickness as the optimal aluminum heat sink thickness, and gradually increase the copper pillar area in the heat transfer model until the maximum temperature shown in the corresponding chip temperature field simulation results is not higher than the rated design temperature of the chip, or the copper pillar area has been increased to the maximum value in the corresponding design value range; The output module is further configured to output the current copper pillar area when the maximum temperature shown in the chip temperature field simulation results is not higher than the rated design temperature of the chip, or the copper pillar area has been increased to the maximum value in the corresponding design value range; The parameter optimization module includes: A calculation unit, configured to calculate the difference between the maximum temperature shown in the chip temperature field simulation results corresponding to the optimal copper pillar thickness and the optimal aluminum heat sink thickness and the rated design temperature; A parameter adjustment unit, configured to gradually increase the copper pillar area starting from the corresponding initial design value of the copper pillar area when the difference is less than the temperature difference threshold, and gradually increase the copper pillar area starting from the reference value of the copper pillar area when the difference is not less than the temperature difference threshold, where the reference value is greater than the corresponding initial design value of the copper pillar area; The reference value of the copper pillar area is determined according to the following formula: Wherein, S represents the parameter adjustment ratio, and T max represents the highest temperature shown in the chip temperature field simulation results corresponding to the optimal values of the copper column thickness and the aluminum heat sink thickness, and T C represents the rated design temperature, D T represents the temperature difference threshold, and S min represents the corresponding initial design value of the copper column area.

3. A computer device, characterized in that, It includes a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor. When the processor executes the computer program, the heat dissipation performance optimization method of the copper pillar structure as described in claim 1 is implemented.

4. A computer-readable storage medium, characterized in that, A computer program is stored in the computer-readable storage medium. When the computer program is executed, the heat dissipation performance optimization method of the copper pillar structure as described in claim 1 is implemented.

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