High-frequency module and communication device

Abstract

The present invention provides a high-frequency module and a communication device capable of suppressing deterioration of the noise figure of a low-noise amplifier. The high-frequency module (1) includes a mounting substrate (2), a low-noise amplifier (12), an input switch (20), and a matching circuit (30). The input switch (20) is connected to the input terminal of the low-noise amplifier (12). The matching circuit (30) achieves impedance matching between the input switch (20) and the low-noise amplifier (12). The matching circuit (30) is disposed on the first main surface (21) in the first direction (D1) of the mounting substrate (2). The input switch (20) and the low-noise amplifier (12) are disposed on the second main surface (22) opposite to the first main surface (21). When the mounting substrate (2) is viewed from above, at least a part of the input switch (20) overlaps with the matching circuit (30).

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module and a communication device that communicate high-frequency signals. Background Art

[0002] Conventionally, there has been known a front-end module (high-frequency module) configured as a switching IC, which is a semiconductor element, including a first switching unit, a second switching unit, a third switching unit (input switch), and an amplifying unit, and includes a substrate (mounting substrate), the switching IC provided on the substrate, and a filter (see Patent Document 1).

[0003] In the front-end module of Patent Document 1, the third switching unit is connected to the input terminal of the amplifying unit (low-noise amplifier) via a matching circuit for obtaining matching between the third switching unit and the amplifying unit.

[0004] Patent Document 1: International Publication No. 2018 / 110393

[0005] In the front-end module of Patent Document 1, depending on the configuration of the switching IC, the path between the third switching unit and the matching circuit may become longer. If the path between the third switching unit and the matching circuit becomes longer, wiring loss occurs, and as a result, the noise figure of the amplifying unit may deteriorate. Summary of the Invention

[0006] The present invention has been made in view of the above problems, and an object thereof is to provide a high-frequency module and a communication device capable of suppressing deterioration of the noise figure of a low-noise amplifier.

[0007] A high-frequency module according to one aspect of the present invention includes a mounting substrate, a low-noise amplifier, an input switch, and a matching circuit. The mounting substrate has a first main surface and a second main surface facing each other. The input switch is connected to the input terminal of the low-noise amplifier. The matching circuit obtains impedance matching between the input switch and the low-noise amplifier. The matching circuit is disposed on the first main surface. The input switch and the low-noise amplifier are disposed on the second main surface. When the mounting substrate is viewed from above, at least a part of the input switch overlaps with the matching circuit.

[0008] A high-frequency module according to one aspect of the present invention includes a mounting substrate, a low-noise amplifier, an input switch, and a matching circuit. The mounting substrate has a first main surface and a second main surface facing each other. The input switch is connected to the input terminal of the low-noise amplifier. The matching circuit obtains impedance matching between the input switch and the low-noise amplifier. The input switch and the matching circuit are disposed on the first main surface. The low-noise amplifier is disposed on the second main surface. When the mounting substrate is viewed from above, the matching circuit overlaps with the input switch.

[0009] One embodiment of the high-frequency module of the present invention includes a mounting substrate, a low-noise amplifier, an input switch, and a matching circuit. The input switch is connected to the input terminal of the low-noise amplifier. The matching circuit obtains impedance matching between the input switch and the low-noise amplifier. One of the matching circuit and the input switch is disposed on the main surface of the mounting substrate, and the other is built in the mounting substrate. When the mounting substrate is viewed from above, at least a part of the input switch overlaps with the matching circuit.

[0010] One embodiment of the communication device of the present invention includes the high-frequency module and a signal processing circuit that performs signal processing.

[0011] According to the present invention, deterioration of the noise figure of the low-noise amplifier can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1A It is a top view when the high-frequency module of Embodiment 1 is viewed from above. Figure 1B It is a cross-sectional view taken along line X1-X1 of the above high-frequency module.

[0013] Figure 2 It is a diagram for explaining the configuration of a front-end module as a high-frequency module in an application example.

[0014] Figure 3 It is a cross-sectional view for explaining the above front-end module.

[0015] Figure 4 It is a cross-sectional view of the high-frequency module of Modification 1 of Embodiment 1.

[0016] Figure 5 It is a cross-sectional view of the high-frequency module of Modification 4 of Embodiment 1.

[0017] Figure 6A It is a top view when the high-frequency module of Embodiment 2 is viewed from above. Figure 6B It is a cross-sectional view taken along line X2-X2 of the above high-frequency module.

[0018] Figure 7A It is a cross-sectional view of the high-frequency module of Modification 1 of Embodiment 2. Figure 7B It is a cross-sectional view of the high-frequency module of Modification 2 of Embodiment 2. Figure 7C It is a cross-sectional view of the high-frequency module of Modification 3 of Embodiment 2.

[0019] Figure 8A It is a top view of the high-frequency module of Modification 5 of Embodiment 2. Figure 8B It is a bottom view of the above high-frequency module. Figure 8C It is a cross-sectional view taken along line X3-X3 of the above high-frequency module.

[0020] Figure 9A It is a top view when looking down at the high-frequency module of Embodiment 3. Figure 9B It is a cross-sectional view taken along the line X4 - X4 of the above-mentioned high-frequency module. Detailed Embodiment

[0021] In the following embodiments and the like, the Figures 1A - 9B are all schematic diagrams, and the ratios of the sizes and thicknesses of the respective constituent elements in the diagrams do not necessarily reflect the actual size ratios.

[0022] (Embodiment 1)

[0023] Hereinafter, Figures 1A - 3 the high-frequency module 1 and the communication device 200 of the present embodiment will be described.

[0024] (1) Overall Configuration of High-Frequency Module

[0025] The high-frequency module 1 of the embodiment is used, for example, in a communication device 200 corresponding to multi-mode / multi-band (refer to Figure 2 ). The communication device 200 is, for example, a mobile phone (e.g., a smart phone), but is not limited thereto. For example, it may also be a wearable terminal (e.g., a smart watch) or the like.

[0026] The high-frequency module 1 is provided, for example, in a communication device 200 corresponding to multi-bands according to a communication standard such as LTE (Long Term Evolution). The high-frequency module 1 receives a signal via an antenna provided in the communication device 200, performs amplification processing and the like on the received signal, and outputs it to a signal processing circuit 202 that processes high-frequency signals (refer to Figure 2 ).

[0027] (2) Constituent Elements of High-Frequency Module

[0028] Here, the constituent elements of the high-frequency module 1 of the present embodiment will be described.

[0029] As Figure 1A shown, the high-frequency module 1 of the present embodiment includes a mounting substrate 2, a switch IC (Integrated Circuit) 10, an input switch 20, a matching circuit 30, and a filter 40.

[0030] The switch IC 10 is a semiconductor element including an antenna switch 11, a low-noise amplifier 12, and an output switch 13. In other words, the antenna switch 11, the low-noise amplifier 12, and the output switch 13 are made into a single chip.

[0031] The mounting substrate 2 is a double-sided mounting substrate, and in the thickness direction of the mounting substrate 2, that is, the first direction D1, it has a first main surface 21 and a second main surface 22 that face each other. Various components constituting the high-frequency module 1 are provided on the first main surface 21 and the second main surface 22. For example, a matching circuit 30 and a filter 40 are provided on the first main surface 21. A switch IC 10 and an input switch 20 are provided on the second main surface 22.

[0032] The high-frequency module 1 further includes a first resin layer 51 covering electronic components such as a filter bank 113, a matching circuit 30, and a filter 40 mounted on the first main surface 21 of the mounting substrate 2 on the first main surface 21 of the mounting substrate 2. The high-frequency module 1 further includes a second resin layer 52 covering electronic components such as the switch IC 10 and the input switch 20 mounted on the second main surface 22 of the mounting substrate 2 on the second main surface 22 of the mounting substrate 2. The material of the second resin layer 52 can be the same material as that of the first resin layer 51 or a different material. In addition, in Figure 1A the first resin layer 51 is omitted.

[0033] In addition, the high-frequency module 1 includes a plurality of external connection electrodes 60. The plurality of external connection electrodes 60 connect the high-frequency module 1 to a mother substrate on which a signal processing circuit 202 and the like are mounted later. The plurality of external connection electrodes 60 are columnar (for example, cylindrical) electrodes provided on the second main surface 22 of the mounting substrate 2. The material of the plurality of external connection electrodes 60 is, for example, a metal (for example, copper, copper alloy, etc.).

[0034] The input terminal of the antenna switch 11 included in the switch IC 10 is connected to, for example, an antenna 201 (refer to Figure 2 ). In addition, the output terminal of the antenna switch 11 is connected to the input terminal of the filter 40. When the high-frequency module 1 has a plurality of filters 40, the antenna switch 11 has a switch that divides the signal received by the antenna 201 into signal paths for each filter 40.

[0035] The filter 40 allows the received signal in a specified frequency band in the received signal received by the antenna 201 to pass through. The filter 40 is, for example, a surface acoustic wave filter, and a plurality of series-arm resonators and a plurality of shunt-arm resonators are respectively constituted by surface acoustic wave resonators. The surface acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that utilizes surface acoustic waves. In addition, the plurality of filters are not limited to SAW filters. The plurality of filters can be, for example, BAW (Bulk Acoustic Wave) filters in addition to SAW.

[0036] The input switch 20 is a switch for inputting the signal output from the filter 40 to the matching circuit 30. The input switch 20 is provided on the second main surface 22 of the mounting substrate 2 as described above. When looking down at the mounting substrate 2, the input switch 20 overlaps at least a part of the filter 40 (refer to Figure 1A ). The input switch 20 is connected to the filter 40 via a via hole 62 provided in the mounting substrate 2. For example, the via hole 62 is provided in an area that overlaps at least a part of both the input switch 20 and the filter 40 when looking down at the mounting substrate 2 (refer to Figure 1B ).

[0037] The matching circuit 30 has an inductor L (refer to Figure 1B ). The matching circuit 30 is a circuit element that obtains impedance matching between the input switch 20 and the low-noise amplifier 12. The matching circuit 30 includes, for example, a substrate having opposed front and back surfaces. The substrate is, for example, a silicon substrate. The inductor L is provided on the front surface side of the substrate. When looking down at the mounting substrate 2, the input switch 20 overlaps at least a part of the matching circuit 30 (refer to Figure 1A ). The input switch 20 is connected to the inductor L of the matching circuit 30 via a via hole 61 provided in the mounting substrate 2. For example, the via hole 61 is provided in an area that overlaps at least a part of both the input switch 20 and the matching circuit 30 when looking down at the mounting substrate 2 (refer to Figure 1B ). In addition, the matching circuit 30 may also be, for example, a single-chip IPD (Integrated Passive Device) including a plurality of inductors and a plurality of capacitors formed on the front surface side of the substrate.

[0038] The low-noise amplifier 12 included in the switch IC 10 is connected to the matching circuit 30. Specifically, the input terminal of the low-noise amplifier 12 is connected to the matching circuit 30. In other words, the input terminal of the low-noise amplifier 12 is connected to the input switch 20. Here, "connected" includes not only the case of direct connection without passing through other circuits but also the case of indirect connection via other circuits.

[0039] The low-noise amplifier 12 amplifies the signal that has passed through the matching circuit 30. When looking down at the mounting substrate 2, the matching circuit 30 and the low-noise amplifier 12 are arranged in the second direction D2 (refer to Figure 1A ). In other words, when looking down at the mounting substrate 2, there are no other components between the matching circuit 30 and the low-noise amplifier 12 and they are arranged.

[0040] The output switch 13 included in the switch IC 10 is connected to the RF signal processing circuit 211 of the signal processing circuit 202 (refer to Figure 2) Connection. The output switch 13 outputs the signal that has passed through the low-noise amplifier 12 to the RF signal processing circuit 211.

[0041] (3) Effects

[0042] In the high-frequency module 1, since the matching circuit 30 is connected to the input switch 20, it is preferable that its path is short. Therefore, in the present embodiment, the high-frequency module 1 includes a mounting substrate 2, a low-noise amplifier 12, an input switch 20, and a matching circuit 30. The mounting substrate 2 has a first main surface 21 and a second main surface 22 that face each other. The input switch 20 is connected to the input terminal of the low-noise amplifier 12. The matching circuit 30 obtains impedance matching between the input switch 20 and the low-noise amplifier 12. The matching circuit 30 is disposed on the first main surface 21. The input switch 20 and the low-noise amplifier 12 are disposed on the second main surface 22. When looking down at the mounting substrate 2, at least a part of the input switch 20 overlaps with the matching circuit 30. According to this configuration, when looking down at the mounting substrate 2, at least a part of the input switch 20 overlaps with the matching circuit 30, so the path of the signal between the input switch 20 and the matching circuit 30 can be shortened. As a result, the wiring loss is reduced, so the deterioration of the noise figure of the low-noise amplifier 12 can be suppressed.

[0043] In addition, since at least a part of the input switch 20 overlaps with the matching circuit 30, the mounting area of the electronic components on the mounting substrate 2 can be reduced, so miniaturization of the high-frequency module 1 can be achieved.

[0044] In addition, since the path between the input switch and the matching circuit can be shortened, an increase in parasitic capacitance can also be prevented.

[0045] And, in the high-frequency module 1, since the filter 40 is connected to the input switch 20, it is preferable that its path is short. In the present embodiment, the input switch 20 is arranged to overlap at least a part of the filter 40 when looking down at the mounting substrate 2. According to this configuration, the path between the input switch 20 and the filter 40 can be made the shortest.

[0046] In addition, when looking down at the mounting substrate 2, the input switch 20 is arranged to overlap at least a part of the filter 40 and at least a part of the matching circuit 30 respectively, so the mounting area of the electronic components on the mounting substrate 2 can be reduced. As a result, miniaturization of the high-frequency module 1 can be achieved.

[0047] (4) Application Examples

[0048] The high-frequency module 1 of the present embodiment can be applied as Figure 2 the front-end module 100 shown.

[0049] The communication device 200 includes a front-end module 100 as the high-frequency module 1. As Figure 2 shown, the communication device 200 includes a front-end module 100, an antenna 201, and a signal processing circuit 202. The communication device 200 transmits and receives signals via the antenna 201. In addition, in Figure 2 , the circuits related to transmission are omitted.

[0050] First, the circuit configuration of the front-end module 100 will be described.

[0051] The front-end module 100 is, for example, disposed at the front end of a multi-mode / multi-band mobile phone. The front-end module 100 is, for example, built into a multi-band mobile phone based on communication standards such as LTE. The front-end module 100 has a plurality of paths (signal paths) for transmitting high-frequency signals with mutually different transmission bands.

[0052] As Figure 2 shown, the front-end module 100 includes a first switch unit 111, a first matching circuit unit 112, a filter bank 113, a third switch unit 114, a second matching circuit unit 115, an amplifier unit 116, and a second switch unit 117. The first switch unit 111, the second switch unit 117, and the amplifier unit 116 are included in the switch IC 110 (see Figure 3 ). In other words, the switch IC 110 is formed by monolithic integration of the first switch unit 111, the second switch unit 117, the third switch unit 114, and the amplifier unit 116.

[0053] The plurality of signal paths are paths through which signals pass through the switch IC 110, the filter bank 113, the first matching circuit unit 112, and the second matching circuit unit 115. The signals flow in the order of the first switch unit 111, the third switch unit 114, the amplifier unit 116, and the second switch unit 117. Specifically, the signals pass through in the order of the first switch unit 111, the first matching circuit unit 112, the filter bank 113, the third switch unit 114, the second matching circuit unit 115, the amplifier unit 116, and the second switch unit 117.

[0054] The first switch unit 111 corresponds to the above-described antenna switch 11. The input terminal of the first switch unit 111 is connected to the antenna 201. In addition, the output terminal of the first switch unit 111 is connected to the input terminal of the filter bank 113. The first switch unit 111 has switches 111a to 111c that divide the signals received by the antenna 201 into signal paths for the respective filters 113a to 113g that make up the filter bank 113.

[0055] The first matching circuit section 112 has, for example, inductors 112a to 112g. Each of the inductors 112a to 112g is a circuit element for obtaining impedance matching between the first switching section 111 and the filter bank 113. One end of each of the inductors 112a to 112g is connected to a path connecting switches 111a to 111c of the first switching section 111 and filters 113a to 113g of the filter bank 113, and the other end is connected to a reference terminal (ground line). Further, in the first matching circuit section 112, instead of being connected between the above path and the ground line, the inductors 112a to 112g may be connected in series to the above path. Also, the first matching circuit section 112 is not limited to the inductors 112a to 112g, and may be a capacitor or a circuit combining an inductor and a capacitor.

[0056] The filter bank 113 has filters 113a to 113g formed of surface acoustic wave resonators, bulk acoustic wave (BAW) resonators, or FBAR (Film Bulk Acoustic Resonator), etc. Further, the filters 113a to 113g may be formed of LC resonance circuits or the like. Here, the filters 113a to 113g are formed of surface acoustic wave resonators. An output terminal of the filter bank 113 is connected to an input terminal of the third switching section 114.

[0057] The filter 113a is, for example, a duplexer in which the input terminals of three filters are common-terminalized. Also, the filters 113d and 113g are, for example, duplexers in which the input terminals of two filters are common-terminalized.

[0058] The third switching section 114 corresponds to the above input switch 20. The third switching section 114 has switches 114a to 114d. Output terminals of the switches 114a to 114d are connected to input terminals of the second matching circuit section 115. Specifically, input terminals of the switches 114a to 114d are connected to the filter bank 113, and output terminals of the switches 114a to 114d are connected to inductors 115a to 115d of the second matching circuit section 115. Each of the switches 114a to 114d selects a signal that has passed through the filters 113a to 113g and outputs the selected signal to the second matching circuit section 115.

[0059] The second matching circuit section 115 includes inductors 115a to 115d. For each of the inductors 115a to 115d, it can be applied to the above-mentioned matching circuit 30. Each of the inductors 115a to 115d is a circuit element for obtaining impedance matching between the third switching section 114 and the amplifying section 116. One end of each of the inductors 115a to 115d is connected to the corresponding switch among the switches 114a to 114d, and the other end is connected to the corresponding amplifying circuit among the amplifying circuits 116a to 116d. In addition, in the second matching circuit section 115, the inductors 115a to 115d may be connected between the above path and the ground instead of being serially arranged in the path connecting the third switching section 114 and the amplifying section 116. And the second matching circuit section 115 is not limited to the inductors 115a to 115g, and may also be a capacitor or a circuit combining an inductor and a capacitor.

[0060] The amplifying section 116 includes amplifying circuits 116a to 116d. Each of the amplifying circuits 116a to 116d amplifies the signal that has passed through the first switching section 111, the first matching circuit section 112, the filter bank 113, the third switching section 114, and the second matching circuit section 115. Each of the amplifying circuits 116a to 116d is, for example, a low-noise amplifier. In other words, for each of the amplifying circuits 116a to 116d, the above-mentioned low-noise amplifier 12 can be applied. The input terminals 126a to 126d of each of the amplifying circuits 116a to 116d are connected to the corresponding inductor among the inductors 115a to 115d. The output terminals of each of the amplifying circuits 116a to 116d are connected to the second switching section 117. Here, each of the input terminals 126a to 126d corresponds to the input terminal of the above-mentioned low-noise amplifier 12.

[0061] The second switching section 117 corresponds to the above-mentioned output switch 13. The second switching section 117 is connected to the RF signal processing circuit 211 of the signal processing circuit 202. The second switching section 117 has switches 117a to 117g for distributing the signal amplified by the amplifying section 116 to the specified terminals of the RF signal processing circuit 211.

[0062] In addition, through a control section (not shown) provided in the front-end module 100, the connections of the switches 111a to 111c included in the first switching section 111, the switches 117a to 117g included in the second switching section 117, and the switches 114a to 114d included in the third switching section 114 are switched.

[0063] The switches 111a to 111c, the switches 114a to 114d, and the switches 117a to 117g are, for example, FET (Field Effect Transistor) switches or diode switches made of GaAs or CMOS (Complementary Metal Oxide Semiconductor).

[0064] Figure 3 Fig. shows a cross-sectional view of the front-end module 100 of the high-frequency module 1. The front-end module 100 has a mounting substrate 120 corresponding to the above-mentioned mounting substrate 2. The mounting substrate 120 (2) has a first main surface 121 (21) and a second main surface 122 (22) that face each other in the thickness direction of the mounting substrate 120, i.e., the first direction D1. A first matching circuit section 112, a filter bank 113, and a second matching circuit section 115 are provided on the first main surface 121. A switch IC 110 and a third switch section 114 (input switch) are provided on the second main surface 122. The first matching circuit section 112, the filter bank 113, and the second matching circuit section 115 are sealed with a resin 160 on the first main surface 121. On the second main surface 122, the switch IC 110 and the third switch section 114 are sealed with a resin 160 on the second main surface 122. The resin 160 provided on the first main surface 121 corresponds to the above-mentioned first resin layer 51, and the resin 160 provided on the second main surface 122 corresponds to the above-mentioned second resin layer 52.

[0065] The front-end module 100 also has a plurality of electrodes 150 (see Figure 3 ). The plurality of electrodes 150 are provided on the second main surface 122. The plurality of electrodes 150 are arranged around the switch IC 110 and the third switch section 114 on the second main surface 122. The first switch section 111 of the switch IC 110 receives a high-frequency signal via the electrode 150. In addition, the plurality of electrodes 150 may be electrodes such as copper pillars (copper pins), electroplating, or copper paste, or solder. The plurality of electrodes 150 correspond to the above-mentioned plurality of external connection electrodes 60.

[0066] In the front-end module 100, it is also the case that: when observing the mounting substrate 120 from the first direction D1, in other words, when looking down at the mounting substrate 120, the third switch section 114 overlaps at least a part of the filter 113a (see Figure 3 ). And, when looking down at the mounting substrate 120, the third switch section 114 overlaps at least a part of the inductor 115a of the second matching circuit section 115 (see Figure 3 ).

[0067] In the front-end module 100, the filter 113a and the corresponding inductor 115a are arranged adjacent to each other in the second direction D2 (refer to Figure 3 ). Here, "adjacent" means that there are no other components between the filter and the matching circuit.

[0068] For example, the input terminal 101 of the third switch section 114 is connected to the filter 113a via the via hole 103. The output terminal 102 of the third switch section 114 is connected to the inductor 115a of the second matching circuit section 115 via the via hole 104.

[0069] Here, the via hole 103 corresponds to the above-described via hole 62 and is provided in a region that at least partially overlaps both the third switch section 114 and the filter 113a when the mounting substrate 2 is viewed from above (refer to Figure 3 ). The via hole 104 corresponds to the above-described via hole 61 and is provided in a region that at least partially overlaps both the third switch section 114 and the inductor 115a when the mounting substrate 2 is viewed from above (refer to Figure 3 ).

[0070] The signal processing circuit 202 includes, for example, an RF signal processing circuit 211 and a baseband signal processing circuit 212. The RF signal processing circuit 211 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing for high-frequency signals. The baseband signal processing circuit 212 is, for example, a BBIC (Baseband Integrated Circuit), and performs prescribed signal processing. The received signal processed by the baseband signal processing circuit 212 is used, for example, as an image signal for image display or as a voice signal for a call. The front-end module 100 transmits a high-frequency signal (here, the received signal) between the antenna 201 and the RF signal processing circuit 211 of the signal processing circuit 202. In the communication device 200, the baseband signal processing circuit 212 is not an essential component.

[0071] As described above, the high-frequency module 1 of the embodiment can be applied as the front-end module 100. In the communication device 200 including the front-end module 100 as the high-frequency module 1, the path between the third switch section 114 as the input switch 20 and each of the inductors 115a to 115d as the matching circuit 30 can be shortened. As a result, deterioration of the noise figure of the low-noise amplifier 12 can be suppressed.

[0072] In addition, here, the front-end module 100 of the receiving system that receives a signal from the antenna 201 and outputs the received signal to the RF signal processing circuit 211 is illustrated. However, the front-end module of the present invention can also be applied to the front-end module of the transmitting system that inputs a high-frequency transmission signal output from the RF signal processing circuit 211 and outputs it to an antenna or the like. At this time, the amplifier circuits 116a to 116d may not be low-noise amplifiers, but may be, for example, power amplifiers that amplify the transmission signal. In addition, the transmission signal flows in the order of the second switch unit 117, the amplification unit 116, the second matching circuit unit 115, the third switch unit 114, the filter bank 113, the first matching circuit unit 112, and the first switch unit 111.

[0073] In addition, it is not necessary to monolithically integrate the first switch unit 111, the second switch unit 117, and the amplification unit 116. The first switch unit 111, the second switch unit 117, and the amplification unit 116 may also be independently arranged on the second main surface 122.

[0074] (5) Variation

[0075] Hereinafter, a variation of Embodiment 1 will be described.

[0076] (5.1) Variation 1

[0077] In this variation, two filters 40 (filters 40a, 40b) are arranged and configured in the first direction D1 (refer to Figure 4 ). In this variation, on the mounting substrate 2, the filters 40a and 40b are arranged (stacked) in this order in the first direction D1. In other words, when looking down at the mounting substrate 2, the filter 40a overlaps with the filter 40b.

[0078] The filter 40a is connected to the first main surface 21 of the mounting substrate 2 via a plurality of terminals 41. The filter 40b is connected to the filter 40a via a plurality of terminals 42 and is connected to the mounting substrate 2 via the filter 40a. Here, the plurality of terminals 41 and the plurality of terminals 42 are, for example, bumps. Each bump is, for example, a solder bump. Each bump is not limited to a solder bump and may also be, for example, a gold bump. The filter 40a is connected to the input switch 20 via a via hole 62.

[0079] For example, when the high-frequency module 1 is applied to communication using carrier aggregation, the filter 40a and the filter 40b may be filters that are used together during simultaneous communication or may be filters that are not used simultaneously during simultaneous communication.

[0080] (5.2) Variation 2

[0081] In Embodiment 1, the switching IC 10 is configured to be provided on the second main surface 22 of the mounting substrate 2, but the configuration is not limited thereto. The switching IC 10 may also be provided on the first main surface 21 of the mounting substrate 2.

[0082] In this case, it is also possible to minimize each path between the filter 40 and the input switch 20 and between the matching circuit 30 and the input switch 20. As a result, deterioration of the noise figure of the low-noise amplifier 12 can be suppressed. In this case, the mounting substrate 2 may not be a double-sided mounting substrate.

[0083] (5.3) Modification Example 3

[0084] It is not necessary to monolithicize the antenna switch 11, the low-noise amplifier 12, and the output switch 13. The antenna switch 11, the low-noise amplifier 12, and the output switch 13 may also be independently arranged on the second main surface 22.

[0085] (5.4) Modification Example 4

[0086] In the high-frequency module 1 of Embodiment 1, as Figure 1B shown, on the second main surface 22 side of the mounting substrate 2, the second resin layer 52 is provided so as to cover the switching IC 10 mounted on the second main surface 22. In addition, the high-frequency module 1 includes a plurality of external connection electrodes 60 formed in a cylindrical shape, and is connected to the mother substrate through these plurality of external connection electrodes 60.

[0087] In contrast, as Figure 5 shown, the second resin layer may be omitted on the second main surface 22 side of the mounting substrate 2, and connection to the mother substrate is made through a plurality of external connection electrodes 60a formed in a spherical shape.

[0088] The plurality of external connection electrodes 60a are, for example, ball bumps each formed in a spherical shape. The material of the ball bumps is, for example, gold, copper, solder, or the like.

[0089] (Embodiment 2)

[0090] For the high-frequency module 1A of Embodiment 2, the arrangement of the input switch 20 included in the high-frequency module 1A is different from that of Embodiment 1. Hereinafter, the description will focus on the points different from Embodiment 1. In addition, the same reference numerals are assigned to the constituent elements identical to those of Embodiment 1, and the description thereof will be appropriately omitted.

[0091] (1) Each constituent element of the high-frequency module

[0092] As Figure 6AAs shown, the high-frequency module 1A of the present embodiment includes a mounting substrate 2, a switch IC 10, an input switch 20, a matching circuit 30, and a filter 40. The switch IC 10 includes an antenna switch 11, a low-noise amplifier 12, and an output switch 13. In addition, in Figure 6A the first resin layer 51 is omitted.

[0093] The matching circuit 30, the filter 40, and the input switch 20 are provided on the first main surface 21 of the mounting substrate 2. The switch IC 10 is provided on the second main surface 22.

[0094] The input switch 20 is a switch for inputting the signal output from the filter 40 to the matching circuit 30. The input switch 20 is provided on the first main surface 21 of the mounting substrate 2 as described above.

[0095] When the mounting substrate 2 is viewed from above, the input switch 20 overlaps at least a part of the matching circuit 30 (refer to Figure 6A , Figure 6B ). Specifically, in the first direction D1, the matching circuit 30 and the input switch 20 are arranged (stacked) in this order on the mounting substrate 2. The input switch 20 and the matching circuit 30 are connected via a through-silicon via (TSV) 80. Specifically, the output terminal 82 of the input switch 20 is connected to the inductor L of the matching circuit 30 via the TSV 80. With this configuration, the path between the input switch 20 and the matching circuit 30 can be shortened. As a result, the deterioration of the noise figure of the low-noise amplifier 12 can be suppressed.

[0096] In addition, in the present embodiment, the input switch 20 and the inductor L of the matching circuit 30 are connected via the TSV 80. However, the present invention is not limited to this configuration. The case where the input switch 20 and the inductor L of the matching circuit 30 are connected via a conductor pattern provided on the substrate of the matching circuit 30 also belongs to the technical scope of the present invention.

[0097] The input switch 20 is arranged adjacent to the filter 40 when the mounting substrate 2 is viewed from above. And the output terminal 84 of the filter 40 and the input terminal 83 of the input switch 20 are arranged such that the distance between the output terminal 84 and the input terminal 83 is short when the mounting substrate 2 is viewed from above. The input terminal 83 of the input switch 20 and the output terminal 84 of the filter 40 are connected via a via hole 81 provided in the matching circuit 30 and a conductor 70 provided on the first main surface 21. By passing through the via hole 81 and the conductor 70, the path between the input switch 20 and the filter 40 can be shortened.

[0098] Therefore, with the above configuration, in the high-frequency module 1A of the present embodiment, the path of the received signal can be shortened. Moreover, by shortening the path of the received signal, an increase in parasitic capacitance can be prevented.

[0099] In addition, the input switch 20 is arranged to overlap at least a part of the matching circuit 30 when the mounting substrate 2 is viewed from above, so that the mounting area of the electronic components on the mounting substrate 2 can be reduced. As a result, miniaturization of the high-frequency module 1A can be achieved.

[0100] Furthermore, the high-frequency module 1A of the present embodiment can be applied to the front-end module 100 described in Embodiment 1.

[0101] (2) Variation

[0102] Hereinafter, the variations in the present embodiment will be described.

[0103] (2.1) Variation 1

[0104] In the high-frequency module 1B of Variation 1, it is different from the high-frequency module 1A in that the input switch 20 and the filter 40 are connected by wire bonding. Specifically, in the high-frequency module 1B of Variation 1, the input terminal 83 of the input switch 20 and the output terminal 84 of the filter 40 are connected by wire bonding using a wire 71 (see Figure 7A ). In this case, the path between the input switch 20 and the filter 40 can also be shortened. Moreover, an increase in parasitic capacitance can be prevented.

[0105] Furthermore, the high-frequency module 1B of the present embodiment can be applied to the front-end module 100 described in Embodiment 1.

[0106] (2.2) Variation 2

[0107] In the high-frequency module 1C of Variation 2, the connection destination of the wire is different from that of the high-frequency module 1B. Specifically, in the high-frequency module 1C of Variation 2, the upper wiring layer of the input switch 20 and the filter 40 (output terminal 84 thereof) are connected by wire bonding using a wire 72 (see Figure 7B ). In this case, the path between the input switch 20 and the filter 40 can also be shortened. Moreover, an increase in parasitic capacitance can be prevented.

[0108] Furthermore, the high-frequency module 1C of the present embodiment can be applied to the front-end module 100 described in Embodiment 1.

[0109] (2.3) Variation 3

[0110] In the high-frequency module 1D of Modification 3, the configuration of the filters in the case of having a plurality of filters, and the connection destinations of the leads are different from those of the high-frequency modules 1B and 1C. Specifically, in the high-frequency module 1D, similar to Modification 1 of Embodiment 1, a plurality of (two in the illustrated example) filters 40 (filters 40a, 40b) are arranged and configured in the first direction D1 (refer to Figure 7C ). In this modification, in the first direction D1, they are arranged (stacked) on the mounting substrate 2 in the order of the filter 40a and the filter 40b. In other words, when looking down at the mounting substrate 2, the filter 40a overlaps with the filter 40b. When connecting the filter 40b to the input switch 20, the output terminal 85 of the filter 40b and the input terminal 83 of the input switch 20 are connected by wire bonding using a lead 73 (refer to Figure 7C ). In addition, similar to Modification 2, the wiring layer on the upper part of the input switch 20 and the filter 40b are connected by wire bonding using a lead 72.

[0111] In this modification, the path between the input switch 20 and the filter 40b can also be shortened. And an increase in parasitic capacitance can be prevented.

[0112] For example, when the high-frequency module 1 is applied to communication of carrier aggregation, the filters 40a and 40b can be either filters used together during simultaneous communication or filters not used simultaneously during simultaneous communication.

[0113] In addition, the high-frequency module 1D of the present embodiment can be applied to the front-end module 100 described in Embodiment 1.

[0114] (2.4) Modification 4

[0115] In Modification 3 of Embodiment 2, it is configured to connect the input switch 20 to the filter 40b, but it is not limited thereto. The input switch 20 can also be connected to the filter 40a. The input switch 20 and the filter 40a can be connected by wire bonding using a lead, or the input switch 20 and the filter 40a can be connected using a conductor provided on the mounting substrate 2.

[0116] (2.5) Modification 5

[0117] In the high-frequency module 1E of Modification 5, the configurations of the antenna switch 11, the low-noise amplifier 12, and the output switch 13 included in the switch IC 10 are different from those of the high-frequency module 1A of Embodiment 2.

[0118] In the high-frequency module 1E of this modification, the matching circuit 30, the filter 40, and the input switch 20 are provided on the first main surface 21 of the mounting substrate 2, and the switch IC 10 is provided on the second main surface 22 of the mounting substrate 2.

[0119] When looking down at the mounting substrate 2, at least one of the input switch 20 and the matching circuit 30 overlaps at least a part of the switch IC 10 (see Figure 8A ). In other words, when looking down at the mounting substrate 2, any one of the antenna switch 11, the output switch 13, and the low-noise amplifier 12 included in the switch IC 10 overlaps at least a part of at least one of the input switch 20 and the matching circuit 30. Specifically, when looking down at the mounting substrate 2, at least the low-noise amplifier 12 among the antenna switch 11, the output switch 13, and the low-noise amplifier 12 overlaps at least one of the matching circuit 30 and the input switch 20 when looking down at the mounting substrate 2 (see Figure 8A , Figure 8B and Figure 8C ). In addition, in Figure 8A , the first resin layer 51 is omitted, and in Figure 8B , the second resin layer 52 is omitted.

[0120] Moreover, it is configured such that the output switch 13 is adjacent to the low-noise amplifier 12 (see Figure 8A , Figure 8B and Figure 8C ).

[0121] According to this configuration, the path from the input switch 20 to the low-noise amplifier 12 can be shortened. As a result, the deterioration of the noise figure of the low-noise amplifier 12 can be suppressed. Also, an increase in parasitic capacitance can be prevented.

[0122] In addition, since it is configured such that at least one of the input switch 20 and the matching circuit 30 overlaps at least a part of the switch IC 10 when looking down at the mounting substrate 2, the mounting area of the electronic components on the mounting substrate 2 can be reduced. As a result, miniaturization of the high-frequency module 1E can be achieved.

[0123] Furthermore, the high-frequency module 1E of the present embodiment can be applied to the front-end module 100 described in Embodiment 1. In addition, the high-frequency module 1E of this modification example can also be applied to Modification Examples 1 to 4 of Embodiment 2.

[0124] (Embodiment 3)

[0125] In the high-frequency module 1F of the present embodiment, the configuration of the input switch 20 is different from that of Embodiments 1 and 2. Hereinafter, the description will focus on the points different from Embodiments 1 and 2. In addition, the same reference numerals are assigned to the same constituent elements as those in Embodiments 1 and 2, and the description thereof will be appropriately omitted.

[0126] As Figure 9AAs shown, the high-frequency module 1F of the present embodiment includes a mounting substrate 2, a switch IC 10, an input switch 20, a matching circuit 30, and a filter 40. In addition, in Figure 9A the first resin layer 51 is omitted.

[0127] The switch IC 10 is a semiconductor element including an antenna switch 11, a low-noise amplifier 12, and an output switch 13.

[0128] The mounting substrate 2 is a double-sided mounting substrate, having a first main surface 21 and a second main surface 22 that face each other in the thickness direction of the mounting substrate 2, i.e., the first direction D1. Each component constituting the high-frequency module 1 is provided on the first main surface 21 and the second main surface 22. For example, the matching circuit 30 and the filter 40 are provided on the first main surface 21. The switch IC 10 is provided on the second main surface 22. The input switch 20 is provided inside the mounting substrate 2. That is, the mounting substrate 2 is a plug-in substrate.

[0129] The input switch 20 is a switch for inputting the signal output from the filter 40 to the matching circuit 30. The input switch 20 is built into the mounting substrate 2. When looking down at the mounting substrate 2, the input switch 20 overlaps at least a part of the filter 40 (refer to Figure 9A ). The input switch 20 and the filter 40 are connected via a via hole 64 provided in the mounting substrate 2. For example, the via hole 64 is provided in a region that overlaps at least a part of both the input switch 20 and the filter 40 when looking down at the mounting substrate 2 (refer to Figure 9B ).

[0130] The matching circuit 30 has an inductor L (refer to Figure 9B ). The matching circuit 30 is a circuit element for obtaining impedance matching between the input switch 20 and the low-noise amplifier 12. The matching circuit 30 includes, for example, a substrate having a surface and a back surface that face each other. The substrate is, for example, a silicon substrate. The inductor L is provided on the surface side of the substrate. When looking down at the mounting substrate 2, the input switch 20 overlaps at least a part of the matching circuit 30 (refer to Figure 9A ). The input switch 20 and the inductor L of the matching circuit 30 are connected via a via hole 61 provided in the mounting substrate 2. For example, the via hole 61 is provided in a region that overlaps at least a part of both the input switch 20 and the matching circuit 30 when looking down at the mounting substrate 2 (refer to Figure 9B ).

[0131] In the present embodiment, the input switch 20 is configured to overlap at least a part of the matching circuit 30 when the mounting substrate 2 is viewed from above. And, when the mounting substrate 2 is viewed from above, a via hole 61 is provided in a region overlapping both the input switch 20 and the matching circuit 30. Therefore, in the present embodiment as well as in Embodiment 1, the path between the input switch 20 and the matching circuit 30 can be made the shortest. As a result, deterioration of the noise figure of the low-noise amplifier 12 can be suppressed.

[0132] In addition, in the present embodiment, the input switch 20 is configured to overlap at least a part of the filter 40 when the mounting substrate 2 is viewed from above. And, when the mounting substrate 2 is viewed from above, a via hole 62 is provided in a region overlapping both the input switch 20 and the filter 40. Therefore, in the present embodiment as well as in Embodiment 1, the path between the filter 40 and the input switch 20 can be made the shortest.

[0133] Moreover, an increase in parasitic capacitance can be prevented.

[0134] In addition, since the input switch 20 is configured to overlap at least a part of the filter 40 and at least a part of the matching circuit 30 when the mounting substrate 2 is viewed from above, the mounting area of electronic components on the mounting substrate 2 can be reduced. As a result, miniaturization of the high-frequency module 1 can be achieved.

[0135] Furthermore, the high-frequency module 1F of the present embodiment can be applied to the front-end module 100 described in Embodiment 1.

[0136] In addition, the high-frequency module 1F of the present embodiment can also be applied to the high-frequency module 1A.

[0137] Moreover, in the present embodiment, although the matching circuit 30 is configured to be provided on the first main surface 21 and the input switch 20 is provided inside the mounting substrate 2, the configuration is not limited thereto. The input switch 20 may be provided on the first main surface 21 and the matching circuit 30 may be provided inside the mounting substrate 2.

[0138] (Summary)

[0139] As described above, the high-frequency module (1) of the first mode includes a mounting substrate (2), a low-noise amplifier (12), an input switch (20), and a matching circuit (30). The mounting substrate (2) has a first main surface (21) and a second main surface (22) facing each other. The input switch (20) is connected to the input terminal of the low-noise amplifier (12). The matching circuit (30) achieves impedance matching between the input switch (20) and the low-noise amplifier (12). The matching circuit (30) is disposed on the first main surface (21). The input switch (20) and the low-noise amplifier (12) are disposed on the second main surface (22). When the mounting substrate (2) is viewed from above, at least a part of the input switch (20) overlaps with the matching circuit (30).

[0140] According to this configuration, the path between the input switch (20) and the matching circuit (30) can be made shortest. As a result, the wiring loss is reduced, so that the deterioration of the noise figure of the low-noise amplifier (12) can be suppressed. Also, since the input switch (20) is disposed to overlap at least a part of the matching circuit (30), the mounting area of the electronic components on the mounting substrate (2) can be reduced. As a result, miniaturization of the high-frequency module (1) can be achieved.

[0141] The high-frequency module (1A; 1B; 1C; 1D; 1E) of the second mode includes a mounting substrate (2), a low-noise amplifier (12), an input switch (20), and a matching circuit (30). The mounting substrate (2) has a first main surface (21) and a second main surface (22) facing each other. The input switch (20) is connected to the input terminal of the low-noise amplifier (12). The matching circuit (30) achieves impedance matching between the input switch (20) and the low-noise amplifier (12). The input switch (20) and the matching circuit (30) are disposed on the first main surface (21). The low-noise amplifier (12) is disposed on the second main surface (22). When the mounting substrate (2) is viewed from above, the matching circuit (30) overlaps with the input switch (20).

[0142] According to this configuration, the path between the input switch (20) and the matching circuit (30) can be made shortest. As a result, the wiring loss is reduced, so that the deterioration of the noise figure of the low-noise amplifier (12) can be suppressed.

[0143] The high-frequency module (1F) of the third mode includes a mounting substrate (2), a low-noise amplifier (12), an input switch (20), and a matching circuit (30). The input switch (20) is connected to the input terminal of the low-noise amplifier (12). The matching circuit (30) obtains impedance matching between the input switch (20) and the low-noise amplifier (12). One of the matching circuit (30) and the input switch (20) is disposed on the main surface (the first main surface 21) of the mounting substrate (2), and the other is built into the mounting substrate (2). When the mounting substrate (2) is viewed from above, at least a part of the input switch (20) overlaps with the matching circuit (30).

[0144] According to this configuration, the path between the input switch (20) and the matching circuit (30) can be made the shortest. As a result, the wiring loss is reduced, so that the deterioration of the noise figure of the low-noise amplifier (12) can be suppressed.

[0145] In the high-frequency module (1) of the fourth mode, in the first mode, it further includes a filter (40) disposed on the first main surface (21). When the mounting substrate (2) is viewed from above, at least a part of the input switch (20) overlaps with the filter (40).

[0146] According to this configuration, miniaturization of the high-frequency module (1) can be achieved. Also, the path between the filter (40) and the input switch (20) can be shortened.

[0147] The high-frequency module (1) of the fifth mode is: in the fourth mode, it further includes a second filter (for example, filter 40b) different from the first filter (for example, filter 40a) which is the filter (40) disposed on the first main surface (21). When the mounting substrate (2) is viewed from above, the first filter overlaps with the second filter.

[0148] According to this configuration, miniaturization of the high-frequency module (1) can be achieved.

[0149] The high-frequency module (1) of the sixth mode is: in any one of the first, fourth, and fifth modes, it further includes an antenna switch (11) and an output switch (13). The antenna switch (11) and the output switch (13) are provided on the second main surface (22).

[0150] According to this configuration, miniaturization of the high-frequency module (1) can be achieved.

[0151] In the high-frequency module (1A; 1B; 1C; 1D; 1E) of the seventh mode, in the second mode, in the thickness direction (the first direction D1) of the mounting substrate (2), they are arranged on the mounting substrate (2) in the order of the matching circuit (30), the input switch (20).

[0152] According to this configuration, by stacking the matching circuit (30) and the input switch (20), the mounting area of the electronic components on the mounting substrate can be reduced. As a result, miniaturization of the high-frequency module (1) can be achieved.

[0153] In the high-frequency module (1A; 1B; 1C; 1D; 1E) of the eighth mode, in the seventh mode, the matching circuit (30) and the input switch (20) are connected via the silicon through electrode (80).

[0154] According to this configuration, the path between the matching circuit (30) and the input switch (20) can be shortened.

[0155] The high-frequency module (1A; 1B; 1C; 1D; 1E) of the ninth mode is as follows: in any one of the second, seventh, and eighth modes, it further includes a filter (40) disposed on the first main surface (21). The filter (40) is provided on the first main surface (21) adjacent to the matching circuit (30) and the input switch (20).

[0156] According to this configuration, the path between the matching circuit (30) and the input switch (20) can be shortened.

[0157] In the high-frequency module (1B; 1C; 1D) of the tenth mode, in the ninth mode, the filter (40) is connected to the input switch (20) by wire bonding.

[0158] According to this configuration, the path between the filter (40) and the input switch (20) can be shortened.

[0159] In the high-frequency module (1A; 1B; 1C; 1D; 1E) of the eleventh mode, in the ninth or tenth mode, it further includes a second filter (for example, filter 40a) different from the first filter (for example, filter 40b) which is the filter (40) disposed on the first main surface (21). The first filter and the second filter are arranged in the order of the second filter and the first filter on the mounting substrate (2) so as to overlap when looking down at the mounting substrate (2).

[0160] According to this configuration, the path between the first filter and the input switch (20) can be shortened.

[0161] The high-frequency module (1E) of the twelfth mode is as follows: in any one of the second, seventh to eleventh modes, it further includes an antenna switch (11) and an output switch (13). The antenna switch (11) and the output switch (13) are disposed on the second main surface (22). When looking down at the mounting substrate (2), any one of the antenna switch (11), the output switch (13), and the low-noise amplifier (12) overlaps with at least one of the matching circuit (30) and the input switch (20).

[0162] According to this configuration, miniaturization of the high-frequency module (1) can be achieved.

[0163] In the high-frequency module (1E) of the thirteenth mode, in the twelfth mode, when the mounting substrate (2) is viewed from above, at least the low-noise amplifier (12) among the antenna switch (11), the output switch (13), and the low-noise amplifier (12) overlaps with at least one of the matching circuit (30) and the input switch (20).

[0164] According to this configuration, miniaturization of the high-frequency module (1) can be achieved.

[0165] In the high-frequency module (1E) of the fourteenth mode, in the twelfth or thirteenth mode, the output switch (13) and the low-noise amplifier (12) are arranged adjacent to each other.

[0166] According to this configuration, the path between the output switch (13) and the low-noise amplifier (12) can be shortened.

[0167] The communication device (200) of the fifteenth mode includes a high-frequency module (1; 1A; 1B; 1C; 1D; 1E) of any one of the first to fourteenth modes and a signal processing circuit (202) that performs signal processing.

[0168] According to this configuration, the path between the input switch (20) and the matching circuit (30) can be made the shortest. As a result, wiring loss is reduced, so deterioration of the noise figure of the low-noise amplifier (12) can be suppressed.

[0169] Reference numeral description: 1, 1A, 1B, 1C, 1D, 1E, 1F... high-frequency module, 2... mounting substrate, 11... antenna switch, 12... low-noise amplifier, 13... output switch, 20... input switch, 21... first main surface, 22... second main surface, 30... matching circuit, 40, 40a, 40b... filter, 80... through-silicon via (TSV), 100... front-end module, 200... communication device, 202... signal processing circuit, D1... first direction (thickness direction).

Claims

1. A high-frequency module, comprising: A mounting substrate having a first main surface and a second main surface facing each other; A low-noise amplifier; An input switch connected to an input terminal of the low-noise amplifier; and A matching circuit for obtaining impedance matching between the input switch and the low-noise amplifier, The input switch has an output terminal connected to the matching circuit, The matching circuit is disposed on the first main surface, The input switch and the low-noise amplifier are disposed on the second main surface, When looking down at the mounting substrate, the output terminal of the input switch overlaps at least a part of the matching circuit.

2. The high-frequency module according to claim 1, wherein, It also includes a filter disposed on the first main surface described above. When looking down at the mounting substrate, at least a part of the input switch overlaps with the filter.

3. The high-frequency module according to claim 2, wherein, It also includes a second filter different from the first filter that is the filter disposed on the first main surface described above. When looking down at the mounting substrate, the first filter overlaps with the second filter.

4. The high-frequency module according to any one of claims 1 to 3, wherein, It also includes an antenna switch and an output switch. The antenna switch and the output switch are disposed on the second main surface.

5. A high-frequency module, comprising: A mounting substrate having a first main surface and a second main surface facing each other; A low-noise amplifier; An input switch connected to an input terminal of the low-noise amplifier; and A matching circuit for obtaining impedance matching between the input switch and the low-noise amplifier, The input switch has an output terminal connected to the matching circuit, The input switch and the matching circuit are disposed on the first main surface, The low-noise amplifier is disposed on the second main surface, When looking down at the mounting substrate, the matching circuit overlaps the output terminal of the input switch.

6. The high-frequency module according to claim 5, wherein, In the thickness direction of the mounting substrate, the matching circuit and the input switch are disposed in this order on the mounting substrate.

7. The high-frequency module according to claim 6, wherein, The matching circuit and the input switch are connected via a silicon through electrode.

8. The high-frequency module according to claim 5, wherein, It also includes a filter disposed on the first main surface. The filter is disposed on the first main surface adjacent to the matching circuit and the input switch.

9. The high-frequency module according to claim 8, wherein, The filter is connected to the input switch by wire bonding.

10. The high-frequency module according to claim 8, wherein, It also includes a second filter different from the first filter that is the filter disposed on the first main surface described above. The first filter and the second filter are disposed on the mounting substrate in the order of the second filter and the first filter so as to overlap when looking down at the mounting substrate.

11. The high-frequency module according to any one of claims 5 to 10, wherein, It also includes an antenna switch and an output switch. The antenna switch and the output switch are disposed on the second main surface. When looking down at the mounting substrate, any one of the antenna switch, the output switch, and the low-noise amplifier overlaps with at least one of the matching circuit and the input switch.

12. The high-frequency module according to claim 11, wherein, When looking down at the mounting substrate, at least the low-noise amplifier among the antenna switch, the output switch, and the low-noise amplifier overlaps with at least one of the matching circuit and the input switch.

13. The high-frequency module according to claim 11, wherein, The output switch and the low-noise amplifier are disposed adjacent to each other.

14. A high-frequency module, comprising: A mounting substrate; A low-noise amplifier; An input switch connected to an input terminal of the low-noise amplifier; and A matching circuit for obtaining impedance matching between the input switch and the low-noise amplifier, The input switch has an output terminal connected to the matching circuit, One of the matching circuit and the input switch is disposed on a main surface of the mounting substrate, and the other is built in the mounting substrate, When looking down at the mounting substrate, the output terminal of the input switch overlaps at least a part of the matching circuit.

15. A communication device, comprising: The high-frequency module according to any one of claims 1 to 14; and A signal processing circuit for performing signal processing.

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