Microelectromechanical sensor device with improved stability against stress

Abstract

Embodiments of the present disclosure relate to microelectromechanical sensor devices with improved stability against stress. A microelectromechanical sensor device has a detection structure, the detection structure comprising: a substrate having a first surface; a moving structure having an inertial mass suspended above the substrate at a first region of the first surface so as to perform at least one inertial movement relative to the substrate; and a fixed structure having a fixed electrode suspended above the substrate at the first region and defining a capacitive coupling portion with the moving structure to form at least one sensing capacitor. The device also includes: a single integral mechanical anchor structure positioned at a second region of the first surface separated from the first region and coupled to the moving structure, the fixed structure, and the substrate; and a connecting element mechanically coupling the moving structure and the fixed structure to the single mechanical anchor structure.

Description

Technical Field

[0001] The present disclosure relates to a MEMS (micro-electromechanical system) sensor device with improved stability to external stresses or stimuli that constitute a disturbance relative to the quantity to be detected. The following discussion will, without any loss of generality, explicitly refer to a MEMS sensor device implementing a capacitive accelerometer designed to detect one or more linear accelerations acting along one or more sensing axes. Background Art

[0002] MEMS accelerometers are known that have a sensing axis in the horizontal plane, i.e., accelerometers that include a sensing structure sensitive to accelerations acting in at least one direction parallel to their main plane of extension and the top surface of a corresponding semiconductor material substrate. MEMS accelerometers with a vertical sensing axis are also known, i.e., accelerometers that include a sensing structure sensitive to accelerations acting in a direction orthogonal to the aforementioned main plane of extension. However, known MEMS accelerometers are subject to stresses and strains due to temperature variations and the material properties of the various materials from which they are made. These stresses and strains can cause displacements of components within known MEMS accelerometers, which can produce undesirable changes in the sensing capacitance.

[0003] Proposed solutions to these problems also have significant drawbacks. For example, changing manufacturing processes and materials to mitigate these effects can increase cost and package size. Furthermore, the proposed solutions are generally applicable only to certain types of MEMS accelerometers, namely, those with sensing axes in certain planes. Summary of the Invention

[0004] The present disclosure is directed to overcoming the problems previously highlighted and, in particular, to providing a micro-electro-mechanical sensor device having improved stability and reduced drift of its electrical characteristics with respect to external stimuli, such as thermal variations, or mechanical or environmental stresses, or other external stimuli of various nature.

[0005] According to the present solution, a micro-electromechanical sensor device is thus provided.The MEMS sensor device may comprise a single integral anchor structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The present disclosure will be more fully understood with reference to the following figures, which are provided for illustrative purposes only. These non-limiting and non-exhaustive embodiments are described with reference to the following figures, wherein, unless otherwise indicated, like reference numerals refer to like parts throughout the various views. In some figures, the sizes and relative positions of the elements in the figures are not necessarily drawn to scale. For example, the shapes of the various elements are selected, amplified, and positioned to improve the legibility of the drawings. In other figures, the sizes and relative positions of the elements in the drawings are drawn strictly to scale. For ease of identification in the drawings, specific shapes of the elements as drawn may have been selected. The figures do not describe every aspect of the teachings disclosed herein and do not limit the scope of the claims.

[0007] Figure 1 is a schematic cross-sectional view of a MEMS sensor device and corresponding package;

[0008] Figures 2A to 2B is a schematic diagram relating to a detection structure of a MEMS sensor device in the presence of a first deformation of a corresponding substrate;

[0009] Figures 3A to 3B is a schematic diagram of a detection structure of a MEMS sensor device in the presence of a second deformation of a corresponding substrate;

[0010] Figure 4 is a schematic plan view of a detection structure of a MEMS sensor device according to a first embodiment of the present solution;

[0011] Figures 5A to 5C are respectively along Figure 4 The lines VA, VB and VC in Figure 4 A cross-sectional view of a MEMS sensor device;

[0012] Figures 6A to 6B is related to the case where there is a first deformation of the corresponding substrate and correspondingly there is a second deformation of the corresponding substrate Figure 4 Schematic diagram of the detection structure of the MEMS sensor device;

[0013] Figure 7 is a schematic plan view of a detection structure of a MEMS sensor device according to a second embodiment of the present solution;

[0014] Figure 8 yes Figure 7 A cross-sectional view of an anchor structure of a MEMS sensor device;

[0015] Figure 9 is a schematic plan view of a detection structure of a MEMS sensor device according to a third embodiment of the present solution;

[0016] 10A to 10C yes Figure 9 A cross-sectional view of the MEMS sensor device along a corresponding line of the portion;

[0017] Figure 11 is a schematic plan view of a detection structure of a MEMS sensor device according to a fourth embodiment of the present solution;

[0018] Figure 12 yes Figure 11 A cross-sectional view of an anchor structure of a MEMS sensor device; and

[0019] Figure 13 is a general block diagram of an electronic device including a MEMS sensor device according to another aspect of the present solution. DETAILED DESCRIPTION

[0020] In general, the sensing structure of a MEMS accelerometer comprises at least one inertial mass, usually defined as a “rotor mass” or simply a “rotor”, as long as it is movable by inertial effects in the presence of the acceleration to be detected (this does not, however, mean that the inertial mass necessarily has rotational movement), and to which a moving electrode (or rotor electrode) is fixedly coupled.

[0021] The inertial mass is arranged suspended above the substrate, coupled to corresponding rotor anchors (fixed relative to the substrate) through elastic elements, which enables the inertial mass to move in one or more sensing directions by inertial effect.

[0022] The sensing structure of the MEMS accelerometer further includes stator electrodes fixedly coupled to the substrate via respective stator anchors and capacitively coupled to the rotor electrodes to form one or more sensing capacitors, a change in capacitance of which is indicative of the quantity to be sensed.

[0023] Specifically, in the detection structure, the rotor and stator anchors have the dual function of mechanical anchors relative to the substrate, but also electrical coupling for biasing the corresponding rotor and stator electrodes and detecting capacitance change signals.

[0024] The MEMS accelerometer also includes an ASIC (application-specific integrated circuit) electronic readout circuit electrically coupled to the detection structure, which receives at its input the capacitance change produced by the sensing capacitor and processes it in order to determine the value of the acceleration for generating an electrical output signal (which can be supplied at the output of the MEMS accelerometer for subsequent processing operations).

[0025] The aforementioned ASIC electronic readout circuitry and detection structures are typically housed within a corresponding semiconductor die, which is then enclosed within a container or "package." The package protects the die and provides an electrical connection interface with the outside world; in so-called substrate-level packaging solutions, this is provided by one or more base and cap layers that are directly coupled to the MEMS device die, forming its mechanical and electrical interfaces to the outside world.

[0026] Figure 1 is a schematic depiction of a MEMS accelerometer 1 comprising a package 2 enclosing: a first die 3a in which an ASIC is arranged; a second die 3b in which a detection structure 4 is arranged, the second die 3b comprising a substrate 5 on which an inertial mass 6 is formed, to which a moving electrode 8 is coupled; and first and second fixed electrodes 9a, 9b which together with the moving electrode form a pair of sensing capacitors whose differential capacitance changes are processed by the ASIC to determine the acceleration to be detected. Figure 1 , stator anchors directly coupled to the substrate 5 are indicated by 10a and 10b. The second die 3b is arranged stacked on the first die 3a; moreover, a top cover 11 is provided on top of the stacked arrangement of the first and second dies 3a, 3b.

[0027] The package 1 also includes: a base layer 2, which supports the above-mentioned stacking arrangement of the first tube core 3a and the second tube core 3b and the top cover 11, and the base layer 2 has an outer surface 12a, which constitutes the outer surface of the package 1 and carries the electrical connection elements to the outside world, for example in the form of electrical connection pads 14; and a coating area 15 (for example, an epoxy resin coating), which surrounds the above-mentioned stacking arrangement of the first tube core 3a and the second tube core 3b and the top cover 10, and defines the external lateral surfaces and top surfaces of the same package 1, which are designed to contact the external environment.

[0028] In the presence of stresses and strains, in particular due to eg changes in temperature or environmental conditions or mechanical stresses interacting with the packaging in the corresponding detection structure, the previously described detection structures may be subject to even significant measurement errors.

[0029] In particular, the package of a microelectromechanical sensor is subject to stresses with temperature changes due to different coefficients of thermal expansion and different values ​​of the Young's modulus or elastic modulus of the different materials from which it is made, which can lead to corresponding stresses in the base of the detection structure. Similar strains can occur due to aging of the material or the aging of specific stresses induced from the outside (for example, during soldering of the package on a printed circuit) or due to the absorption of moisture by the material constituting the package.

[0030] like Figure 2A As schematically shown in FIG, in the presence of deformation in the substrate 5, such as deformation caused by thermal stress due to a positive temperature gradient (ΔT>0), expansion may occur at the top surface 5a of the substrate 5 ( Figure 2A The deformation is exaggerated for clarity.) The expansion may cause the fixed electrodes 9a, 9b to move, without external acceleration, relative to an initial rest situation, away from the corresponding mobile electrode 8. The corresponding stator anchors 10a, 10b actually undergo a relative displacement relative to the rotor anchors (not shown here).

[0031] Specifically, in Figure 2B In the embodiment, the distance in the static state and in the absence of deformation is represented by g0, and the displacement due to the deformation of the substrate 5 relative to the case in the static state is represented by x 1,ΔT and x 2,ΔT represents (these displacements may vary as a function of temperature (or generally as a function of all those external effects capable of inducing strains in the substrate 5 )).

[0032] The above displacements result in the following changes in the values ​​of the sensing capacitances indicated by C1, C2, which may be undesirable because these changes are unrelated to the acceleration to be detected:

[0033]

[0034]

[0035] Likewise, reference Figure 3A and Figure 3B , a negative temperature gradient (ΔT<0) can result in a depression of the top surface 5a of the substrate 5. The depression of the top surface 5a results in the following changes in the values ​​of the sensing capacitors C1, C2. The following changes are due to the fixed electrodes 9a, 9b approaching the corresponding moving electrodes 8 relative to the initial situation at rest:

[0036]

[0037]

[0038] The above capacitance changes therefore lead to undesired modifications (so-called drift or offset) of the output signal supplied by the MEMS accelerometer in the rest state (known as the “zero gravity level”) and consequent errors in the acceleration detection.

[0039] Several solutions have been proposed to minimize these capacitance variations. Some involve optimizing the acceleration sensing structure. For example, US 2011 / 0023604 discloses a sensing structure in which the positioning of the rotor and stator anchors is optimized to reduce variations in electrical parameters due to substrate deformation. Specifically, the rotor and stator anchors are positioned in close proximity to each other—as close as possible to maintain compatibility with manufacturing processes.

[0040] However, this solution (although advantageous) only involves z-axis accelerometers of the vertical type, i.e. designed to detect accelerations perpendicular to the main horizontal plane of extension of the corresponding rotor block, and therefore has limited applicability. Moreover, as already mentioned, in this solution there are physical limitations (linked to the size of the anchors) and also technical limitations (linked to the manufacturing techniques) that do not allow effective elimination of drift errors in the output signal supplied by the MEMS accelerometer (in fact, in any case there is a certain distance between the anchor positions, which is minimized in accordance with the manufacturing process).

[0041] Other solutions involve optimizing the package. For example, the use of ceramic substrates, which have reduced sensitivity to deformation, has been proposed. However, these solutions introduce greater difficulties in the manufacturing process and are generally more expensive. Furthermore, ceramic packages are typically larger than traditional plastic packages.

[0042] As will be described in detail below, one aspect of the present solution envisages providing a detection structure of a MEMS sensor device such that a mobile electrode (so-called rotor electrode) and a fixed electrode (so-called stator electrode) capacitively coupled to define at least one sensing capacitor are mechanically coupled to a substrate via the same single (or monolithic), unified and continuous mechanical anchor structure, which in turn is fixedly coupled to the same substrate. In this way, any possible stress caused by the packaging in the substrate is reflected in an equivalent manner on the mobile electrode and the fixed electrode, thereby making the detection insensitive to stress and preventing any possible modification of the output signal supplied by the MEMS sensor device in a static state (so-called zero-gravity level drift).

[0043] Thus, a distinction is made between mechanical anchors defining at least some of the structural elements of the detection structure (in particular, the fixed electrodes) and electrical anchors by introducing intentionally provided electrical anchors, distinct from the mechanical anchors, for biasing the electrodes and detecting the capacitance change signal. As will be described in detail, these electrical anchors are electrically coupled to a single mechanical anchor structure in order to define an electrical path for biasing and detecting the capacitance change signal, while representing a completely negligible mechanical coupling.

[0044] According to an aspect of the present solution, the detection structure comprises two stacked structural layers of semiconductor material (particularly epitaxial silicon) which are independent of each other and are suitably processed (particularly by trench etching and removal of a sacrificial layer) to define structural elements of the detection structure.

[0045] As will be described in detail below, at least the inertial mass of the detection structure is defined in the first structural layer, and at least a connection element toward a single anchor structure is defined in the second structural layer, in particular for mechanically coupling the fixed electrode to the anchor structure. Furthermore, within the single anchor structure, different electrical coupling regions are defined that are mechanically fixed relative to one another but electrically decoupled, enabling the definition of separate and distinct conductive paths for electrically biasing the fixed electrode via the electrical coupling regions and the connection element.

[0046] The production of the detection structure via the above-described stacked structural layers can be carried out, for example, using the process described in detail in Italian patent application 102020000003868 filed on February 25, 2020 in the name of the present applicant.

[0047] Briefly, the process envisages growing a first thick epitaxial layer of a dielectric material on a substrate (e.g., a single-crystal silicon substrate) and disposed on a first sacrificial layer, and then partially removing the first thick epitaxial layer by chemical etching (e.g., using hydrofluoric acid vapor). The first sacrificial layer has an opening in which an anchoring region is defined for anchoring the first epitaxial layer to the substrate.

[0048] The first epitaxial layer forms a first structural layer in which a first trench is formed, for example, using dry chemical silicon etching. The trench is either empty or subsequently filled with a dielectric material and defines the bottom portion (i.e., closer to the substrate) of a structural element of the detection structure or the same structural element. A conductive region (which defines the electrical pads and interconnects) is formed below the first sacrificial layer at the anchoring region of the substrate of the first epitaxial layer. The conductive region is separated from the top surface of the substrate by a dielectric layer and enables electrical biasing of the structural element.

[0049] Next, the manufacturing process envisages forming a second sacrificial layer of dielectric material on the first epitaxial layer and defining the second sacrificial layer to form sacrificial regions separated from each other by openings.

[0050] A second epitaxial layer is then formed on the first epitaxial layer and the sacrificial region, the second epitaxial layer having a thickness, for example, smaller than that of the first epitaxial layer. The second epitaxial layer is in direct contact with the first epitaxial layer at the aforementioned opening and constitutes a second structural layer in which the structural element of the detection structure or the top portion of the structural element (i.e., the portion further away from the substrate) is partially defined by forming the second trench.

[0051] The process then envisages partially or completely removing the sacrificial area, again by chemical etching (for example using hydrofluoric acid vapor), in order to release the structural elements of the detection structure.

[0052] It should be noted that after etching, regions of the second epitaxial layer can be in direct (mechanical and electrical) contact with underlying regions of the first epitaxial layer, or can be separated from the underlying first epitaxial layer by empty regions or gaps so as to be suspended above the first epitaxial layer, or can be separated from the first epitaxial layer by dielectric regions remaining after etching the second sacrificial layer.

[0053] The process generally includes a final step of coupling a top cover via a bonding layer (e.g., a bonding layer of glass frit) on the stack of the first and second structural layers of the detection structure. This top cover has a sealing function (including a hermetic seal) and has the purpose of protecting the detection structure from the external environment (from moisture, dust, etc.) and from impacts.

[0054] refer to Figure 4 Floor plan and Figures 5A to 5C With reference to subsequent cross-sectional views of FIG, one or more embodiments of the present solution are now described with reference to the sensor device 20 as a single-axis accelerometer in the horizontal plane XY.

[0055] The detection structure 21 of the sensor device 20 comprises an inertial mass 22 arranged to be suspended above a substrate 24 of semiconductor material, in particular silicon. The inertial mass has the shape of a frame in the horizontal plane XY, i.e. a plane parallel to the top surface 24a of the substrate 24 and constituting the main extension plane of the same inertial mass 22.

[0056] The detection structure 21 has a central symmetry axis A parallel to a first horizontal axis X of the horizontal plane XY, and the frame of the inertial mass 22 extends along a second horizontal axis Y of the horizontal plane XY, which is orthogonal to the first horizontal axis x.

[0057] As will be emphasized further below, the sensor device 20 senses accelerations along a second horizontal axis Y, wherein the inertial mass 22 is a moving inertial mass along the second horizontal axis Y in response to the acceleration to be detected.

[0058] A window 25 is defined inside the frame of the inertial mass 22. The mobile electrode 26 and the fixed electrodes 27a, 27b are arranged in the window 25 in planar and parallel planes and in a mutually staggered configuration.

[0059] The mobile electrode 26 is fixedly coupled to the inertial mass 22 and has a main extension along a first horizontal axis X in a horizontal plane XY. The window 25 is divided into two halves in the horizontal plane XY by a central symmetry axis A. A first fixed electrode 27a is arranged in the upper halves of the two halves of the window 25, while a second fixed electrode 27b is arranged in the lower halves of the two halves of the window 25. The first and second fixed electrodes 27a, 27b are arranged on opposite sides of, and facing, the respective mobile electrodes 26 along the second horizontal axis Y. The fixed electrodes 27a, 27b and the mobile electrode 26 form a pair of sensing capacitors that undergo relative capacitance changes in response to movement of the inertial mass 22 along the second horizontal axis Y (to provide a differential detection scheme).

[0060] The detection structure 21 also includes a rotor support element 28 located inside the window 25. In some embodiments, the rotor support element 28 is centrally located in the window 25 and extends along the second horizontal axis Y. The inertial mass 22 is coupled to the rotor support element 28 by an elastic coupling element 29, which may have a folded configuration. The elastic coupling element 29 conforms to movement along the second horizontal axis Y (thus enabling detection of movement of the inertial mass 22) and is rigid to other movement in the horizontal plane xy, as well as other movement in directions transverse to the same horizontal plane xy (particularly along a vertical axis Z orthogonal to the horizontal plane xy).

[0061] According to one or more embodiments, the inertial mass 22, the mobile electrode 26, and the fixed electrodes 27a, 27b are arranged in a second structural layer 30b (in particular, a second structural layer of epitaxial silicon) of the detection structure 21, which is located at a higher level and further away from the top surface 24a of the substrate 24, while the rotor support element 28 is arranged in a first structural layer 30a (in particular, another first structural layer of epitaxial silicon) of the same detection structure 21, which is located at a lower level and closer to the top surface 24a of the substrate 24.

[0062] Furthermore, in the embodiment illustrated, the inertial mass 22 has a reinforcing structure along its periphery (in a discontinuous manner), which is fixed relative to the inertial mass 22 and constitutes itself as part of the inertial mass 22, which part is arranged in the first structural layer 30a. The elastic coupling element 29 is obtained by defining both the first structural layer 30a and the second structural layer 30b.

[0063] The detection structure 21 further comprises a single anchor structure 32 which mechanically anchors the inertial mass 22 and the corresponding mobile electrode 26 and fixed electrodes 27 a , 27 b to the same area of ​​the substrate 24 .

[0064] Specifically, the above-mentioned inertial mass 22 (which encloses the mobile electrode 26 and the fixed electrodes 27a, 27b in the window 25) is positioned at a first area 24′ of the top surface 24a of the substrate 24, and the single anchor structure 32 is positioned at a second area 24″ of the top surface 24a of the substrate 24. The second area 24″ is positioned outside the first area 24′ and is spaced apart from the first area 24″ by a selected distance.

[0065] The detection structure 21 further includes a first connection element 34a and a second connection element 34b for mechanically coupling the first fixed electrode 27a and the second fixed electrode 27b, respectively, to a single anchor structure 32. The detection structure 21 includes a third connection element 34c for mechanically coupling the rotor support element 28 to the single anchor structure 32, such that the fixed electrodes 27a, 27b and the rotor support element 28 are anchored to the substrate 24 in the same region of the substrate 24.

[0066] The connection elements 34a to 34c are provided in the first structural layer 30a of the detection structure 21, which is located at a lower level and is positioned closer to the top surface 24a of the substrate 24, so as to "straddle" the frame of the inertial mass 22 (which, in contrast, is provided at a higher level and further away from the top surface 24a of the substrate 24) and reach the anchor structure 32. It should be noted that the connection elements 34a to 34c pass under the inertial mass 22, wherein the inertial mass 22 does not have a reinforcement structure provided in the first structural layer 30a, as shown in FIG. Figure 5B ) is shown in ).

[0067] More detailed and specific reference Figure 5A , different electrical coupling regions are defined in a single anchor structure 32. These electrical coupling regions are mechanically fixed relative to each other but electrically decoupled by a trench isolation region 36 filled with a dielectric material. The electrical coupling regions include a first coupling region 32a and a second coupling region 32b, which are fixedly coupled to a first connecting element 34a and a second connecting element 34b, respectively, and a third coupling region 32c, which is fixedly coupled to a third connecting element 34c. In the illustrated embodiment, the coupling regions 32a to 32c are defined at a lower level in the first structural layer 30a of the detection structure 21 and closer to the top surface 24a of the substrate 24.

[0068] In more detail, the third coupling region 32c is centrally arranged relative to the single anchor structure 32, and the above-mentioned first coupling region 32a and second coupling region 32b are arranged outside the third coupling region 32c, on opposite sides of the third coupling region 32c along the second horizontal axis Y.

[0069] The third coupling region 32c is directly connected (via a connecting portion of the epitaxial silicon) to an underlying conductive pad or path (not shown here) formed on the surface 24a of the substrate 24. The first coupling region 32a and the second coupling region 32b are separated from the same top surface 24a of the substrate 24 by respective dielectric regions 37 (which remain after the sacrificial layer underlying the first structural layer is removed during the fabrication process).

[0070] The single anchor structure 32 further comprises a cover region 38 in the second structural layer 30 b of the detection structure 21 , which is arranged on top of the coupling regions 32 a to 32 c and is separated from the coupling regions 32 a to c by a further dielectric region 39 .

[0071] like Figure 5A As will be described in detail again in , the detection structure 21 further comprises a first electrical anchor structure 40a and a second electrical anchor structure 40b that are distinct and separate from the single mechanical anchor structure 32 along the second horizontal axis y. The first electrical anchor structure 40a and the second electrical anchor structure 40b are electrically coupled to the first coupling region 32a and the second coupling region 32b of the same mechanical anchor structure 32 via first electrical connection elements (or wires) 42a and second electrical connection elements (or wires) 42b, respectively.

[0072] In detail, the first and second electrical anchor structures 40a, 40b are formed by portions of the first structural layer 30a of the detection structure 21, which is located at a lower level and closer to the top surface 24a of the substrate 24. In the illustrated example, the first and second electrical anchor structures 40a, 40b are arranged on opposite sides of the mechanical anchor structure 32 along the second horizontal axis Y. The electrical connection elements 42a, 42b themselves are provided in the first structural layer 30a as elongated portions folded in a serpentine manner and are configured to form a completely negligible mechanical coupling with the first coupling region 32a and the second coupling region 32b of the mechanical anchor structure 32.

[0073] The portions of the first structural layer 30a defining the first and second electrical anchor structures 40a, 40b are directly connected (via connecting portions of epitaxial silicon) to corresponding underlying conductive pads or paths (not shown here) formed on the surface 24a of the substrate 24.

[0074] Thus, separate and distinct conductive paths are defined in the detection structure 21 for electrical biasing and detection of capacitance change signals. These paths include: a first conductive path and a second conductive path for electrical connection between the first and second fixed electrodes 27a, 27b (including the first and second electrical anchor structures 40a, 40b described above), the first and second electrical connection elements 42a, 42b, the first and second coupling regions 32a, 32b of the mechanical anchor structure 32, and the first and second connection elements 34a, 34b; and a third conductive path for electrical connection between the inertial mass 22, the coupled mobile electrode 26 (including the third coupling region 32c of the mechanical anchor structure 32), and the third connection element 34c.

[0075] Advantageously, the presence of a single anchor structure 32 makes it possible to eliminate relative displacements between the rotor and the stator due to external stresses or stimuli.

[0076] For example, Figure 6A and Figure 6B As schematically shown in FIG. 1 , even in the presence of a positive temperature gradient (ΔT>0, Figure 6A ) or negative temperature gradient (ΔT<0, Figure 6B ), in the absence of external acceleration, substantially no relative movement occurs between the mobile electrode 26 and the fixed electrodes 27a to 27b at rest (in other words, there is no change in the gap at rest g0). The mobile electrode 26 and the fixed electrodes 27a to 27b are actually forced to move together in a fixed manner due to their coupling to the single anchor structure 32.

[0077] Advantageously, therefore, no undesired modification of the output signal supplied by the MEMS accelerometer in the stationary state occurs, due to the absence of changes in the zero gravity level.

[0078] Moreover, it is emphasized that any possible deformation of the substrate 24 at the first electrical anchor structure 40a and the second electrical anchor structure 40b (relative to the position of the above-mentioned single anchor structure 32) is completely elastically absorbed by the first electrical connection element 42a and the second electrical connection element 42b without affecting the single anchor structure 32.

[0079] refer to Figure 7 The plan view of FIG. 1 depicts one or more embodiments of the present solution. Figure 7 The sensor device 20 is illustrated as being a single axis accelerometer in a horizontal plane XY (with the sensing axis along a second horizontal axis Y).

[0080] exist Figure 7 In the embodiment, the configuration of the detection structure 21 is substantially equivalent to the configuration described above, but Figure 7 The detection structure 21 in FIG. 2 is vertically “flipped” or inverted vertically. Thus, the inertial mass 22, the mobile electrode 26, the fixed electrodes 27a, 27b, and the elastic suspension element 29 are located in a first structural layer 30a, while the rotor support element 28 and the connection elements 34a to 34c are located in a second structural layer 30b of the detection structure 21 so as to “straddle” the frame of the inertial mass 22 and reach a single anchor structure 32.

[0081] In some embodiments, the configuration of a single anchor structure 32 is changed, e.g. Figure 8 As illustrated in the cross-sectional view of FIG (wherein the electrical connection elements 42 a, 42 b are schematically represented for simplicity).

[0082] In particular, the coupling regions 32 a to 32 c are provided in the second structure layer 30 b and are separated from each other by trench isolation regions 36 , which may be empty, ie, without dielectric filler material.

[0083] An integral anchor portion 46 composed entirely of epitaxial silicon is defined in first structural layer 30a of sensing structure 21. Integral anchor portion 46 is directly coupled (via a connecting portion of epitaxial silicon) to an underlying conductive pad or path (not shown here) formed on surface 24a of substrate 24.

[0084] The first and second coupling regions 32a, 32b are coupled to the aforementioned integral anchor portion 46 via respective dielectric regions 47, while the third coupling region 32c is directly connected (via a connecting portion of epitaxial silicon) to the same integral anchor portion 46.

[0085] In this embodiment, the first electrical anchor structure 40a and the second electrical anchor structure 40b are stacked portions of the first structural layer 30a and the second structural layer 30b of the detection structure 21. The electrical connection elements 42a, 42b are disposed in the second structural layer 30b and are configured to form a negligible mechanical coupling with the first coupling region 32a and the second coupling region 32b of the mechanical anchor structure 32.

[0086] Figure 7 and Figure 8 The single mechanical anchor structure 32 in FIG. 1 is connected to the substrate 24 by a unitary silicon portion (unitary anchor portion 46) having a single coefficient of thermal expansion and other consistent material properties and characteristics throughout the anchor portion 46. Thus, Figure 7 and Figure 8The anchor portion 46 in reduces or eliminates possible second order effects represented by the different thermal expansion coefficients of silicon and the dielectric material (silicon oxide), resulting in an even stronger rejection of external stimuli and reduced variations in the sensed capacitance.

[0087] refer to Figure 9 Floor plan and Figures 10A to 10C , the third embodiment comprises a sensor device 20 which is a single-axis accelerometer for detecting vertical acceleration along a vertical axis Z which is orthogonal to the horizontal plane XY.

[0088] According to the above Figure 9 and 10A to 10C It is clear from inspection that, except for the inertial mass 22 and the configuration of the moving and fixed electrodes of the detection structure, the single mechanical anchor structure 32 is similar to the other embodiments described herein for implementing the detection of vertical acceleration.

[0089] More specifically, the inertial mass 22 has a substantially rectangular shape in the horizontal plane XY, with the main extension along the second horizontal axis Y. In this case, the window 25 has reduced dimensions and divides the inertial mass 22 into two parts, one with a greater extension along the second horizontal axis Y and one with a smaller extension along the second horizontal axis Y.

[0090] An elastic coupling element 29 is located within the window 25 and is linear and aligned along an axis of rotation A′ parallel to the first horizontal axis X. The elastic coupling element 29 is centrally coupled to a rotor support element 28 that is centrally located in the same window 25 but below the inertial mass 22 and suspended above the base 24 .

[0091] In this case, the elastic coupling element 29 complies with torsional movements about the axis of rotation A′ and is rigid with respect to linear movements in or outside the horizontal plane XY, so as to move the inertial mass 22 about the same axis of rotation A′.

[0092] The first and second fixed electrodes 27 a and 27 b are located below the inertial mass 22, and in particular below the first and second portions of the inertial mass 22 defined by the window 25. The first and second fixed electrodes have a substantially rectangular shape in the horizontal plane XY and are suspended above the top surface 24 a of the base 24.

[0093] The inertial mass 22 includes a mobile electrode 26 of the detection structure 21, which is capacitively coupled to underlying fixed electrodes 27a, 27b in a direction perpendicular to the axis Z to form two sensing capacitors with different variations. Rotation of the inertial mass 22 about the rotation axis A′ causes the inertial mass 22 to approach one of the two fixed electrodes 27a, 27b and correspondingly move away from the other of the fixed electrodes 27a, 27b.

[0094] In some embodiments, first and second connection elements 34a, 34b are present to mechanically couple first and second fixed electrodes 27a, 27b, respectively, to a single anchor structure 32. Furthermore, a third connection element 34c mechanically couples rotor support element 28 to the same single anchor structure 32.

[0095] In this embodiment, the inertial mass 22 is arranged in the second structural layer 30b of the detection structure 21, which is located at a higher level and farther away from the top surface 24a of the substrate 24 (the reinforcement structure is again fixedly formed in the first structural layer 30a along its periphery in a discontinuous manner), while the first fixed electrode 27a and the second fixed electrode 27b, the rotor support element 28 and the connecting elements 34a to 34c are arranged in the first structural layer 30a of the same detection structure 21 and are located at a lower level and closer to the top surface 24a of the substrate 24.

[0096] It should be understood that other embodiments may include Figure 9 and 10A to 10C Changes or modifications to the vertical accelerometer configuration that are consistent with the reference Figure 7 and Figure 8 The changes or modifications described are similar.

[0097] Specifically, in Figure 11 A fourth embodiment of the present solution is illustrated in plan view of Figure 11 A sensor device 20 is illustrated which is a single axis accelerometer along a vertical axis Z.

[0098] Will be from Figure 11 It is clear from the figure that the configuration of the detection structure 21 is similar to that of the previous reference Figure 9 and Figures 10A to 10C The configuration described is essentially equivalent, but "flipped upside down," or having the following items inverted: the inertial mass 22, which is primarily arranged in the first structural layer 30a of the detection structure 21 and is located at a lower level and closer to the top surface 24a of the substrate 24, as well as the first and second fixed electrodes 27a, 27b, the rotor support element 28, and the connecting elements 34a to 34c arranged in the second structural layer 30b of the same detection structure 21.

[0099] like Figure 12 As shown in the cross-sectional view of FIG, the anchor structure 32 is aligned with the reference Figure 8 The anchor structure is similar to that discussed in the third embodiment.

[0100] Figure 13 An electronic device 50 is shown that utilizes a micro-electromechanical sensor device 51 as described herein in some embodiments to detect acceleration in a horizontal or vertical axis.

[0101] In addition to the above-mentioned detection structure 21, the micro-electromechanical sensor device 51 also includes an ASIC 53, which forms a corresponding reading interface (and the ASIC 53 can be set in the same die as the die in which the detection structure 21 is also set or in a different die, which can be accommodated in the same package or a different package in any case).

[0102] In some non-limiting examples, the electronic device 50 is a portable mobile communication device, such as a mobile phone, a PDA (personal digital assistant), a portable computer, an audio digital player with recording capability, a camera or video camera, a video game controller, or other similar device. The electronic device 50 is generally capable of processing, storing, and / or transmitting and receiving signals and information.

[0103] The electronic device 50 includes a microprocessor 54 that receives the acceleration signal detected by the microelectromechanical sensor device 51, and an input / output interface 55 that is provided with, for example, a keyboard and a display, and is connected to the microprocessor 54. In addition, the electronic device 50 may include a speaker 57 for generating sound on an audio output (not shown) and an internal memory 58.

[0104] The advantages of the micro-electromechanical sensor device according to the present solution are clearly apparent from the foregoing description.

[0105] In particular, it is emphasized that the present solution substantially reduces or eliminates drifts in the electrical properties of the detection structure 21 due to deformations of the substrate 24 caused by external stresses and stimuli, such as variations in temperature or mechanical stress. Variations in temperature and mechanical stress can be caused by soldering to a printed circuit board, heat generation and dissipation during use of the sensor 20 described herein, aging or moisture absorption, and other causes of any nature.

[0106] In this way, the detection structure 21 is extremely stable, regardless of the situation of use and assembly in the corresponding package.

[0107] Furthermore, the general detection performance, in terms of eg sensitivity, does not change compared to conventional solutions, since the construction and arrangement of the sensing electrodes relative to the inertial mass is not modified in a way that degrades the detection performance.

[0108] Finally, it is evident that modifications and variations may be made to what has been described and illustrated herein without departing from the scope of the present disclosure as defined in the appended claims.

[0109] In particular, it is apparent that the detection structure 21 can be arranged in a horizontal plane for detecting acceleration components directed along the first horizontal axis X (instead of along the second horizontal axis Y) in a manner completely analogous to that already discussed with reference to the first two embodiments.

[0110] Furthermore, some aspects of the detection structure 21 may be varied without substantially modifying the proposed solution. For example, it is obvious that the number of sensing electrodes (fixed electrodes 27a, 27b and mobile electrode 26) may be varied with respect to what has been described and may include a greater number of electrodes or even only one set of electrodes in embodiments where a differential detection scheme is not implemented.

[0111] Furthermore, it is clear that the described solution can also be advantageously applied to different types of MEMS sensor devices that detect changes in capacitance, such as gyroscope sensors.

[0112] Finally, it is obvious that the described solution can be implemented in a single-axis sensor or a dual-axis sensor or a three-axis sensor capable of detecting acceleration (or different quantities) also along the first horizontal axis X and / or along the vertical axis Z (these sensors are provided with other structures and with appropriately arranged mobile and fixed electrodes).

[0113] A micro-electromechanical sensor device (20) having a detection structure (21) can be summarized as comprising: a substrate (24) having a top surface (24a) extending in a horizontal plane (xy); a moving structure (22, 26) comprising an inertial mass (22) suspended above the substrate (24) at a first region (24') of the surface (24a), and the moving structure being configured to perform a movement relative to the substrate (24) according to a quantity to be detected; and a fixed structure (27a, 27b) comprising a fixed electrode suspended above the substrate (24) at the first region (24') of the surface (24a), and the fixed structure being in contact with the moving structure ( The invention relates to a method for mechanically coupling a mobile structure (22, 26) and a fixed structure (27a, 27b) to a substrate (24) having two movable structures (22, 26) and a fixed structure (27a, 27b) to a substrate (24) at a second region (24") of the surface (24a), the second region (24") being distinct from and separate from the first region (24'); and connecting elements (34a to 34c) configured to mechanically couple the mobile structure (22, 26) and the fixed structure (27a, 27b) to the single mechanical anchor structure (32).

[0114] The detection structure (21) may further include a support element (28), the inertial mass block (22) being coupled to the support element (28) via an elastic coupling element (29), the elastic coupling element (29) being compliant with the inertial movement; wherein the connecting element includes: a first connecting element (34a) and a second connecting element (34b), fixedly coupled between the respective sets of the fixed electrodes (27a, 27b) and the single mechanical anchor structure (32); and a third connecting element (34c), fixedly coupled between the support element (28) and the single mechanical anchor structure (32).

[0115] A first structural layer (30a) and a second structural layer (30b) are stacked on each other and arranged on the substrate (24); wherein the inertial mass block (22) can be mainly formed in one of the first structural layer (30a) and the second structural layer (30b), and the connecting elements (34a to 34c) can be formed in the other of the structural layer (30a) and the second structural layer (30b).

[0116] The single mechanical anchor structure (32) may include different electrical coupling regions (32a to 32c) that are mechanically fixed but electrolytically coupled relative to each other so as to define separate and distinct conduction paths for electrically biasing the fixed electrodes (27a to 27b) and the inertial mass (26) through the electrical coupling regions (32a to 32c) and the connecting elements (34a to 34c); wherein the connecting elements (34a to 34c) may be coupled to respective ones of the electrical coupling regions (32a-32c), respectively.

[0117] The single mechanical anchor structure (32) may include a trench isolation region (36) which may be empty or filled with a dielectric material and arranged to separate the electrical coupling regions (32a to 32c) from each other.

[0118] The device may also include a first electrical anchor structure (40a) and a second electrical anchor structure (40b), which may be different and separate from the single mechanical anchor structure (32) and may be electrically coupled to the first coupling region (32a) and electrically coupled to the second coupling region (32b) of the mechanical anchor structure (32) via a first electrical connection element (42a) and a second electrical connection element (42b), respectively; the first and second electrical anchor structures (40a, 40b) are fixedly coupled to the substrate (24).

[0119] The first and second electrical connection elements (42a, 42b) may be elastic elements that provide a negligible mechanical coupling between the first and second electrical anchor structures (40a, 40b) and the first and second electrical coupling regions (32a, 32b) of the mechanical anchor structure (32).

[0120] The separate and distinct conduction paths may include: a first conduction path and a second conduction path for electrical connection toward respective sets of the fixed electrodes (27a, 27b), the first conduction path and the second conduction path including the first electrical anchor structure and the second electrical anchor structure (40a, 40b); the first electrical connection element and the second electrical connection element (42a, 42b); the first coupling region and the second coupling region (32a, 32b) of the mechanical anchor structure (32); a first connection element (34a) and a second connection element (34b); b), which can be fixedly coupled between the fixed electrodes (27a, 27b) and the respective sets of the single mechanical anchor structure (32); and a third conductive path for electrically connecting to the inertial mass (22), the third conductive path comprising a third coupling region (32c) of the mechanical anchor structure (32); and a third connecting element (34c), fixedly coupled between the single mechanical anchor structure (32) and the support element (28), the inertial mass (22) being coupleable to the third connecting element (34c) via an elastic coupling element (29).

[0121] The first and second structural layers (30a, 30b) may be epitaxial silicon layers grown on the top surface (24a) of the substrate (24), and these epitaxial silicon layers may be at least partially electrically and / or mechanically decoupled from each other.

[0122] The inertial mass (22) internally defines a window (25), wherein a support element (28) can be arranged in the window (25); the inertial mass (22) is coupled to the support element (28) via an elastic coupling element (29), which can move in accordance with inertia.

[0123] The inertial mass (22) and the fixed electrodes (27a, 27b) can be arranged in a second structural layer (30b) of the detection structure (21), and the second structural layer (30b) is located at a higher level and further away from the top surface (24a) of the substrate (24); the support element (28) can be arranged in a first structural layer (30a) of the detection structure (21), and the first structural layer (30a) is located at a lower level and closer to the top surface (24a) of the substrate (24); and the connecting elements (34a to 34b) are connected to the detection structure (21). 4c) can be arranged in the first structural layer (30a); and the coupling area (32a to 32c) of the single mechanical anchor structure (32) is defined in the first structural layer (30a), and the mechanical anchor structure (32) further includes a covering area (38), which is arranged in the second structural layer (30b) of the detection structure (21) and is arranged on the coupling area (32a to 32c), and the covering area (38) is separated from the coupling area (32a-32c) by a dielectric area (39).

[0124] The device may further include a first electrical anchor structure (40a) and a second electrical anchor structure (40b), the first electrical anchor structure (40a) and the second electrical anchor structure (40b) being distinct and separate from the single mechanical anchor structure (32) and electrically coupled to the first coupling region (32a), and the first electrical anchor structure (40a) and the second electrical anchor structure (40b) being electrically coupled to the second coupling region (32a) of the mechanical anchor structure (32) via the first electrical connection element (42a) and the second electrical connection element (42b), respectively. The mechanical anchor structure (32) includes a first coupling region (32b), a third coupling region (32c) of the mechanical anchor structure (32) being centrally arranged relative to the mechanical anchor structure (32), and the first coupling region and the second coupling region (32a, 32b) being arranged outside the third coupling region (32c); the third coupling region (32c) being directly connected to a conductive pad or path formed on a surface (24a) of the substrate (24), and the first coupling region and the second coupling region (32a, 32b) being separated from the top surface (24a) of the substrate (24) by respective dielectric regions (37).

[0125] The inertial mass (22) and the fixed electrodes (27a, 27b) can be arranged in a first structural layer (30a) of the detection structure (21), the first structural layer (30a) being located at a lower level and closer to the top surface (24a) of the substrate (24), and the support element (28) can be arranged in a second structural layer (30b) of the detection structure (21), the second structural layer (30b) being located at a higher level and further away from the top surface (24a) of the substrate (24), and the connecting elements (34a to 34c) can be arranged in the second structural layer (30b); and the coupling region (32a to 32c) of the single mechanical anchor structure (32) can be limited to the first structural layer (30b). In the second structural layer (30b), the mechanical anchor structure (32) may further include an integral anchor portion (46), which is disposed in the first structural layer (30a), and the integral anchor portion (46) is directly coupled to an underlying conductive pad or path formed on the surface (24a) of the substrate (24); wherein the first coupling region (32a) and the second coupling region (32b) of the single mechanical anchor structure (32) are coupled to the integral anchor portion (46) via corresponding dielectric regions (47), and the third coupling region (32c) of the single mechanical anchor structure (32) may be directly connected to the integral anchor portion (46).

[0126] The detection structure (21) may implement a single-axis accelerometer configured to detect acceleration along a horizontal axis (y) of the horizontal plane (xy); wherein the mobile structure may further include a mobile electrode (26) fixedly coupled to the inertial mass (22), arranged inside the window (25), and interleaved with the fixed electrodes (27a, 27b) of the fixed structure.

[0127] The detection structure (21) may implement a single-axis accelerometer configured to detect acceleration along a vertical axis (z) orthogonal to the horizontal plane (xy); wherein the fixed electrodes (27a, 27b) may be arranged below the inertial mass (22) on opposite sides of the window (25).

[0128] The various embodiments described above can be combined to provide further embodiments.Aspects of the embodiments can be modified, if necessary to employ concepts of the various patents, applications, and publications to provide yet another embodiment.

[0129] These and other changes can be made to the embodiments in light of the above detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and claims, but should be construed to include all possible embodiments and the full scope of equivalents to which such claims are entitled. Therefore, the claims are not limited by this disclosure.

Claims

1. A micro-electromechanical sensor device comprising: a substrate having a first surface, the first surface having a first region and a second region, the second region being positioned outside the first region in a lateral direction; a mobile structure comprising an inertial mass suspended above the substrate at the first region of the first surface; a fixed structure comprising a fixed electrode suspended above the substrate at the first region of the first surface; at least one sensing capacitor comprising said mobile structure capacitively coupled to said fixed structure; a single integral anchor coupled to the base at the second region, the single integral anchor coupled to the mobile structure and the fixed structure; Support elements; as well as Multiple connection elements, including: a first connection element and a second connection element coupled to respective sets of said fixed electrodes and said single integral anchor; as well as A third connecting member is coupled to the support member and the single integral anchor.

2. The micro-electromechanical sensor device according to claim 1, further comprising: A plurality of elastic coupling elements are coupled to the inertial mass and the supporting element.

3. The micro-electromechanical sensor device according to claim 1 , further comprising: a first structural layer, located on the substrate; as well as A second structural layer is located on the substrate and stacked on the first structural layer, wherein a first structural layer of the first structural layer and the second structural layer includes the inertial mass block, and a second structural layer of the first structural layer and the second structural layer includes the plurality of connecting elements.

4. The micro-electromechanical sensor device of claim 2 , wherein the single integral anchor comprises different electrical coupling regions coupled to the plurality of connecting elements, the electrical coupling regions being mechanically coupled to each other and electrically isolated from each other to define separate and distinct conductive paths through the electrical coupling regions and the plurality of connecting elements. 5 . The micro-electromechanical sensor device of claim 4 , wherein the single integral anchor comprises a trench isolation region disposed between the electrical coupling regions.

6. The micro-electromechanical sensor device of claim 4, wherein the single integral anchor comprises a first coupling region and a second coupling region, the micro-electromechanical sensor device further comprising: a first electrical anchor coupled to the substrate; a second electrical anchor coupled to the substrate, the first and second electrical anchors being distinct and separate from the single unitary anchor; a first electrical connection element electrically coupled to the first coupling region of the single unitary anchor and the first electrical anchor; as well as A second electrical connection element is electrically coupled to the second coupling region of the single integral anchor and to the second electrical anchor.

7. The micro-electromechanical sensor device according to claim 6, wherein the first electrical connection element and the second electrical connection element are elastic elements, which include negligible mechanical coupling between the first electrical anchor and the second electrical anchor and the first coupling region and the second coupling region of the single integral anchor.

8. The micro-electromechanical sensor device of claim 6 , wherein the single integral anchor comprises a third coupling region, the separate and distinct conductive paths comprising: a first conductive path and a second conductive path for electrical connection between respective sets of the fixed electrodes, the first conductive path and the second conductive path comprising: the first electrical anchor and the second electrical anchor; the first electrical connection element and the second electrical connection element; said first coupling region and said second coupling region of said single unitary anchor; A first connection element and a second connection element of the plurality of connection elements are coupled between respective sets of the fixed electrodes; and said single unitary anchor; and A third conductive path is configured to be electrically connected to the inertial mass, wherein the third conductive path comprises: said third coupling region of said single unitary anchor; and A third connecting element of the plurality of connecting elements is coupled between the single integral anchor and the support element. 9 . The micro-electromechanical sensor device according to claim 3 , wherein the first structure layer and the second structure layer are epitaxial silicon layers on the first surface of the substrate, the epitaxial silicon layers being at least partially electrically or mechanically isolated from each other, or both electrically and mechanically isolated.

10. The micro-electromechanical sensor device according to claim 1, further comprising: a window passing through the inertial mass; a support element disposed in the window; A plurality of elastic coupling elements are coupled to the inertial mass block and the supporting element.

11. The micro-electromechanical sensor device of claim 10 , wherein the single integral anchor comprises a plurality of coupling regions, a footprint on the plurality of coupling regions, and a first dielectric region between the plurality of coupling regions and the footprint, the micro-electromechanical sensor device further comprising: A first structural layer is located on the substrate, and the first structural layer includes: said supporting element; the plurality of connecting elements; and said plurality of coupling regions of said single unitary anchor; and a second structural layer located on the first structural layer and positioned farther from the first surface than the first structural layer, the second structural layer comprising: the inertial mass block; the fixed electrode; and the footprint of the single, unitary anchor.

12. The micro-electromechanical sensor device of claim 11 , wherein the plurality of coupling regions of the single integral anchor comprises a first coupling region, a second coupling region, and a third coupling region, the micro-electromechanical sensor device further comprising: a plurality of second dielectric regions located between the first and second coupling regions of the single integral anchor and the substrate; a first electrical anchor; a second electrical anchor, the first electrical anchor and the second electrical anchor being distinct and separate from the single unitary anchor; a first electrical connection element electrically coupled to the first electrical anchor and the first coupling region of the single unitary anchor; a second electrical connection element electrically coupled to the second electrical anchor and the second coupling region of the single integral anchor; A conductive path is located on the first surface of the substrate, and the third coupling region is directly coupled to the conductive path.

13. The micro-electromechanical sensor device of claim 10 , wherein the single integral anchor comprises a plurality of coupling regions and an integral anchor portion, the plurality of coupling regions comprising a first coupling region, a second coupling region, and a third coupling region, the third coupling region being directly coupled to the integral anchor portion, the micro-electromechanical sensor device further comprising: a conductive path on the first surface of the substrate, the conductive path directly coupled to the integral anchor portion of the single integral anchor; A first structural layer is located on the substrate, and the first structural layer includes: the inertial mass block; the fixed electrode; and said unitary anchor portion of said single unitary anchor; a second structural layer, located on the first structural layer and positioned farther from the first surface of the substrate than the first structural layer, the second structural layer comprising: the plurality of connecting elements; and said plurality of coupling regions of said single unitary anchor; and A plurality of dielectric regions are coupled to the integral anchor portion and the first coupling region and the second coupling region of the single integral anchor. 14 . The micro-electromechanical sensor device according to claim 10 , wherein the moving structure further comprises a moving electrode coupled to the inertial mass and arranged inside the window and interdigitated with the fixed electrode. 15 . The micro-electromechanical sensor device of claim 10 , wherein the fixed electrode is positioned closer to the substrate than the inertial mass and on opposite sides of the window.

16. A micro-electromechanical sensor device comprising: substrate; a moving structure coupled to the substrate and comprising an inertial mass and a plurality of moving electrodes; Window, throwing the inertial mass block; a fixed structure coupled to the substrate and comprising a plurality of fixed electrodes capacitively coupled to the moving electrodes; a single integral anchor coupled to the base and positioned exteriorly of the window; Support elements; as well as Multiple connection elements, including: a first connection element and a second connection element coupled to respective sets of said fixed electrodes and said single integral anchor; as well as A third connecting member is coupled to the support member and the single integral anchor.

17. The micro-electromechanical sensor device according to claim 16, further comprising: a first structural layer, located on the substrate, the first structural layer comprising the movable structure and the fixed structure; as well as A second structural layer is located on the first structural layer and is positioned farther from the substrate than the first structural layer, the second structural layer including the plurality of connecting elements.

18. The micro-electromechanical sensor device according to claim 16, further comprising: a first structural layer located on the substrate, the first structural layer comprising the plurality of connecting elements; as well as The second structural layer is located on the first structural layer and is positioned farther from the substrate than the first structural layer, the second structural layer including the moving structure and the fixed structure.

19. A system comprising: Micro-electromechanical devices, including: a substrate having a first region and a second region separated from the first region; and A detection structure is positioned in the first area, and the detection structure includes: Inertial mass; a plurality of movable electrodes; and a plurality of fixed electrodes capacitively coupled to the plurality of movable electrodes; a single integral anchor coupled to the substrate, the single integral anchor positioned in the second region; support elements; and Multiple connection elements, including: first and second connecting elements coupled to respective sets of said fixed electrodes and said single integral anchor; and A third connecting element is coupled to the support element and the single integral anchor, the plurality of connecting elements extending between the first region and the second region.

20. The system of claim 19, further comprising: a first structural layer, located on the substrate; as well as a second structural layer located on the first structural layer and positioned further away from the substrate than the first structural layer; A first one of the first and second structural layers includes the detection structure, and a second one of the first and second structural layers includes the plurality of connection elements.

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