Substrate processing device and driving method of relay member

Abstract

The present invention provides a substrate processing device and a driving method of a relay member that can accurately measure pressure even at a driving portion. The substrate processing device includes a chamber, a shielding member, and a relay member. The chamber includes a processing chamber for performing processing on a substrate using introduced gas and an exhaust chamber for exhausting the gas in the processing chamber. The shielding member is provided at least partially near the side wall of the chamber, the shielding member separates the processing chamber from the exhaust chamber, and has a hole connecting the processing chamber and the exhaust chamber on a portion of the wall surface of the shielding member parallel to the side wall of the chamber, and the shielding member can be driven in the up and down directions. The relay member is hollow, and the relay member is connected to a pipe connected to a measuring instrument outside the chamber. The relay member can be driven in the horizontal direction. When the shielding member reaches the upper end, the relay member is driven toward the center of the chamber, so that the end of the relay member on the center direction side is connected to the shielding member, and the processing chamber and the pipe are connected via the hole.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a method for driving a relay member. Background Art

[0002] Conventionally, there is a known substrate processing apparatus that uses introduced gas to perform desired processing on a substrate. The substrate processing apparatus includes a chamber having: a processing chamber for mounting a substrate and for introducing gas, and an exhaust chamber for exhausting the gas in the processing chamber. A sediment shield is provided in the chamber to prevent precipitates (sediments) generated during a process such as etching from adhering to the inner wall of the chamber. The sediment shield separates the processing chamber from the exhaust chamber in the chamber. In the substrate processing apparatus, when performing the desired processing, the pressure, which is a value representing the state in the processing chamber, is measured and controlled to meet the processing conditions. In order to accurately measure the pressure of the processing chamber in the chamber in a state where a sediment shield is provided, it is proposed to provide a sleeve at the inlet portion of the pressure gauge.

[0003] In addition, the chamber is provided with an opening for carrying substrates in and out, and a gate valve is provided to open and close the opening. Therefore, a gate is provided on the deposition shield corresponding to the position of the chamber opening, and the gate can be opened by moving it up and down.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2015-119069

[0007] Patent Document 2: Japanese Patent Application Laid-Open No. 2015-126197 Summary of the Invention

[0008] Problems to be solved by the invention

[0009] The present disclosure provides a substrate processing apparatus and a method for driving a relay member, which are capable of accurately measuring the state within a processing chamber even at a driving portion.

[0010] Solutions for solving problems

[0011] A substrate processing device according to a technical solution of the present disclosure comprises a chamber, a shielding member and a relay member. The chamber comprises a processing chamber for processing a substrate using an introduced gas and an exhaust chamber for exhausting the gas in the processing chamber. The shielding member is provided at least partially near the side wall of the chamber, the shielding member separates the processing chamber from the exhaust chamber, and a hole connecting the processing chamber and the exhaust chamber is provided on a portion of the wall surface of the shielding member parallel to the side wall of the chamber, and the shielding member is capable of being driven in the up and down directions. The relay member is hollow, and is connected to a piping of a measuring instrument connected to the outside of the chamber. The relay member is capable of being driven in the horizontal direction. When the shielding member reaches the upper end, the relay member is driven toward the center of the chamber, so that the end of the relay member on the center direction side is connected to the shielding member, and the processing chamber and the piping are connected via the hole.

[0012] Effects of the Invention

[0013] According to the present disclosure, the state within the processing chamber can be accurately measured even at a driving portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a diagram showing an example of a substrate processing apparatus according to an embodiment of the present disclosure.

[0015] Figure 2 This is a partially enlarged view showing an example of a cross section of the sleeve drive mechanism according to the present embodiment.

[0016] Figure 3 This is a diagram showing an example of the surface of the shield member in this embodiment that comes into contact with the sleeve.

[0017] Figure 4 This is a diagram showing an example of the arrangement of the O-ring between the shield member and the sleeve according to the present embodiment.

[0018] Figure 5 This is a diagram showing another example of the arrangement of the O-ring between the shield member and the sleeve according to the present embodiment.

[0019] Figure 6 This is a diagram showing an example of the operation of the sleeve drive mechanism according to this embodiment.

[0020] Figure 7 This is a flowchart showing an example of the sleeve driving process according to the present embodiment.

[0021] Figure 8 This is a partially enlarged view showing an example of a cross section of the sleeve drive mechanism according to Modification 1.

[0022] Figure 9This is a partially enlarged view showing an example of a cross section of the sleeve drive mechanism according to Modification 2.

[0023] Figure 10 This is a partially enlarged view showing an example of a cross section of a sleeve drive mechanism according to Modification 3.

[0024] Figure 11 It is a diagram showing an example of the surface of the shield member in Modifications 4 to 7 that comes into contact with the sleeve.

[0025] Figure 12 This is a diagram showing an example of the arrangement of an O-ring between a shield member and a sleeve according to a fourth modification.

[0026] Figure 13 This is a diagram showing an example of the arrangement of an O-ring between a shield member and a sleeve according to Modification 5.

[0027] Figure 14 This is a diagram showing an example of the arrangement of an O-ring between a shield member and a sleeve according to Modification 6.

[0028] Figure 15 This is a diagram showing an example of the arrangement of an O-ring between a shield member and a sleeve according to Modification 7.

[0029] Figure 16 It is a diagram showing an example of the surface of the shield member in Modifications 8 to 12 that comes into contact with the sleeve.

[0030] Figure 17 This is a diagram showing an example of the arrangement of an O-ring between a shield member and a sleeve according to Modification 8.

[0031] Figure 18 This is a diagram showing an example of the arrangement of an O-ring between a shield member and a sleeve according to a ninth modification.

[0032] Figure 19 This is a diagram showing an example of the arrangement of an O-ring between a shield member and a sleeve according to Modification 10.

[0033] Figure 20 This is a diagram showing an example of the arrangement of an O-ring between a shield member and a sleeve according to Modification 11.

[0034] Figure 21 This is a diagram showing an example of a method for holding an O-ring in the case of a shaft seal.

[0035] Figure 22 It is a figure which shows an example of the shape of the front-end|tip part of a sleeve.

[0036] Figure 23This is a diagram showing an example of connection between a shield member and a sleeve according to Modification 12.

[0037] Figure 24 This is a diagram showing an example of connection between a shield member and a sleeve according to Modification 13. DETAILED DESCRIPTION

[0038] Hereinafter, embodiments of the disclosed substrate processing apparatus and relay member driving method will be described in detail with reference to the accompanying drawings.

[0039] In substrate processing equipment, pressure, representing the state within the processing chamber, must be measured at multiple locations depending on the processing conditions. Conventional sleeves cannot be installed at gates that are driven vertically. Large gates of deposit shields restrict the placement of sleeves, making it difficult to measure the desired pressure. Therefore, it is desirable to accurately measure the state (e.g., pressure) within the processing chamber even at driven locations such as the gates of deposit shields.

[0040] [Structure of substrate processing apparatus]

[0041] Figure 1 This figure shows an example of a substrate processing apparatus according to one embodiment of the present disclosure. While the following description uses a plasma processing apparatus as an example, the present invention is not limited thereto and may be any substrate processing apparatus having a vertically driven gate member, a deposit shield, or the like.

[0042] exist Figure 1 In the embodiment, the plasma processing apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus. For example, the plasma processing apparatus 1 includes a cylindrical chamber (processing chamber) 10 formed of aluminum having an anodized (anodized) surface. The chamber 10 is securely grounded. However, the present invention is not limited to this. The plasma processing apparatus 1 is not limited to a capacitively coupled parallel plate plasma etching apparatus and may be any other type of plasma processing apparatus, such as an inductively coupled plasma (ICP), microwave plasma, or magnetron plasma.

[0043] A cylindrical susceptor support 12 is disposed at the bottom of the chamber 10 via an insulating plate 11, such as ceramic. A conductive susceptor 13, made of, for example, aluminum, is disposed on the susceptor support 12. The susceptor 13 serves as a lower electrode and is used to support a substrate to be etched, such as a semiconductor wafer W.

[0044] An electrostatic chuck (ESC) 14 is disposed on the upper surface of the susceptor 13, which holds the wafer W by electrostatic attraction. The electrostatic chuck 14 includes an electrode plate 15 formed of a conductive film and a pair of insulating layers, such as a dielectric material such as Y2O3, Al2O3, or AlN, that clamp the electrode plate 15. A DC power supply 16 is electrically connected to the electrode plate 15 via connection terminals. The electrostatic chuck 14 attracts and holds the wafer W by Coulomb force or Johnson-Rahbek force generated by the DC voltage applied by the DC power supply 16.

[0045] In addition, on the upper surface of the electrostatic chuck 14, a plurality of push pins (for example, three) are provided as lifting pins that protrude freely from the upper surface of the electrostatic chuck 14 in the portion that adsorbs and holds the wafer W. These push pins are connected to a motor (not shown) by means of a ball screw (not shown), and the motor converts the rotational motion into linear motion by using the ball screw, and protrudes freely from the upper surface of the electrostatic chuck 14. As a result, the push pins penetrate the electrostatic chuck 14 and the base 13, and move up and down in the inner space in a protruding and retracting manner. When etching is performed on the wafer W, the push pins are accommodated in the electrostatic chuck 14 when the electrostatic chuck 14 adsorbs and holds the wafer W. When the wafer W that has been etched is sent out from the plasma generation space S, the push pins protrude from the electrostatic chuck 14, separate the wafer W from the electrostatic chuck 14, and lift it upward.

[0046] An edge ring 17, for example, made of silicon (Si), is disposed around the upper surface of the susceptor 13 to improve etching uniformity, and a cover ring 54 is disposed around the edge ring 17 to protect the side of the edge ring 17. Furthermore, the side surfaces of the susceptor 13 and the susceptor support 12 are covered with a cylindrical member 18, for example, made of quartz (SiO2).

[0047] A refrigerant chamber 19, for example, extending circumferentially, is disposed within the susceptor support 12. A refrigerant, such as cooling water, at a predetermined temperature is circulated from an external cooling unit (not shown) via pipes 20a and 20b into the refrigerant chamber 19. The refrigerant temperature in the refrigerant chamber 19 controls the processing temperature of the wafer W on the susceptor 13.

[0048] In addition, a heat transfer gas supply mechanism (not shown) supplies heat transfer gas, such as helium (He) gas, through a gas supply line 21 to between the upper surface of the electrostatic chuck 14 and the back surface of the wafer W, thereby efficiently and uniformly controlling the heat transfer between the wafer W and the base 13.

[0049] An upper electrode 22 is arranged above the susceptor 13, parallel to and opposite the susceptor 13. The space formed between the susceptor 13 and the upper electrode 22 functions as a plasma generation space S (the space within the processing chamber). The upper electrode 22 includes an outer upper electrode 23 in the shape of a ring or annulus, arranged opposite the susceptor 13 at a predetermined distance, and an inner upper electrode 24 in the shape of a circular plate, insulated from the outer upper electrode 23 and arranged radially inward of the outer upper electrode 23. Regarding plasma generation, the outer upper electrode 23 plays a primary role, while the inner upper electrode 24 plays a secondary role.

[0050] An annular gap (gap) of, for example, 0.25 to 2.0 mm is formed between the outer upper electrode 23 and the inner upper electrode 24, and a dielectric 25 formed of, for example, quartz is arranged in the gap. In addition, a ceramic body can be arranged in the gap instead of the dielectric 25 formed of quartz. The dielectric 25 is sandwiched between the outer upper electrode 23 and the inner upper electrode 24, thereby forming a capacitor. The capacitance C1 of the capacitor is selected or adjusted to a desired value based on the size of the gap and the dielectric constant of the dielectric 25. In addition, an annular insulating shielding member 26 formed of, for example, aluminum oxide (Al2O3) or yttrium oxide (Y2O3) is airtightly arranged between the outer upper electrode 23 and the side wall of the chamber 10.

[0051] The outer upper electrode 23 is preferably made of a low-resistance conductor or semiconductor that generates little Joule heat, such as silicon. An upper high-frequency power supply 31 is electrically connected to the outer upper electrode 23 via an upper matching device 27, an upper power supply rod 28, a connector 29, and a power supply tube 30. The upper matching device 27 matches the load impedance with the internal (or output) impedance of the upper high-frequency power supply 31. When plasma is generated within the chamber 10, the upper matching device 27 functions to ensure that the output impedance of the upper high-frequency power supply 31 and the load impedance appear to be aligned. The output terminal of the upper matching device 27 is connected to the upper end of the upper power supply rod 28.

[0052] The power supply tube 30 is formed of a roughly cylindrical or conical conductive plate, such as an aluminum plate or a copper plate. The lower end of the power supply tube 30 is continuously connected to the outer upper electrode 23 in the circumferential direction, and the upper end of the power supply tube 30 is electrically connected to the lower end of the upper power supply rod 28 via a connector 29. Outside the power supply tube 30, the side wall of the chamber 10 extends to a position above the height position of the upper electrode 22 to form a cylindrical grounding conductor 10a. The upper end of the cylindrical grounding conductor 10a is electrically insulated from the upper power supply rod 28 by a cylindrical insulating member 69. In this structure, in the load circuit observed from the connector 29, the power supply tube 30, the outer upper electrode 23, and the grounding conductor 10a form a coaxial line with the power supply tube 30 and the outer upper electrode 23 as a waveguide.

[0053] The inner upper electrode 24 includes an upper electrode plate 32 and an electrode support 33. The upper electrode plate 32 is made of a semiconductor material such as silicon or silicon carbide (SiC), and has a plurality of electrode plate gas vents (first gas vents) not shown. The electrode support 33 is a conductive material that supports the upper electrode plate 32 so that it can be loaded and unloaded, and is made of, for example, aluminum with an anodized surface. The upper electrode plate 32 is fastened to the electrode support 33 with bolts (not shown). The heads of the bolts are protected by an annular shielding ring 53 disposed below the upper electrode plate 32.

[0054] On the upper electrode plate 32, each electrode plate gas vent passes through the upper electrode plate 32. A buffer chamber for introducing a processing gas described later is formed inside the electrode support 33. The buffer chamber includes two buffer chambers divided by an annular partition member 43 formed by, for example, an O-ring, namely a central buffer chamber 35 and a peripheral buffer chamber 36, and the lower portion of the buffer chamber is open. A cooling plate (hereinafter referred to as "C / P") 34 (intermediate member) that blocks the lower portion of the buffer chamber is arranged below the electrode support 33. C / P34 is formed of aluminum with anodizing treatment applied to the surface, and has a plurality of C / P gas vents (second gas vents) not shown in the figure. In C / P34, each C / P gas vent passes through C / P34.

[0055] A spacer 37, formed of a semiconductor material such as silicon or silicon carbide, is interposed between the upper electrode plate 32 and the C / P 34. The spacer 37 is a disc-shaped member having a plurality of upper surface annular grooves formed concentrically with the disc on the surface facing the C / P 34 (hereinafter referred to as the "upper surface"), and a plurality of spacer gas vents (third gas vents) extending through the spacer 37 and opening at the bottom of each upper surface annular groove.

[0056] The inner upper electrode 24 supplies the process gas introduced into the buffer chamber from the process gas supply source 38 (described later) to the plasma generation space S via the C / P gas vents of the C / P 34, the spacer gas flow path of the spacer 37, and the electrode plate gas vents of the upper electrode plate 32. Here, the central buffer chamber 35, together with the multiple C / P gas vents, spacer gas flow paths, and electrode plate gas vents located below it, constitute a central showerhead (processing gas supply path). Furthermore, the peripheral buffer chamber 36, together with the multiple C / P gas vents, spacer gas flow paths, and electrode plate gas vents located below it, constitute a peripheral showerhead (processing gas supply path).

[0057] In addition, if Figure 1As shown, a processing gas supply source 38 is arranged outside the chamber 10. The processing gas supply source 38 supplies processing gas to the central buffer chamber 35 and the peripheral buffer chamber 36 at a desired flow ratio. Specifically, the gas supply pipe 39 from the processing gas supply source 38 branches into two branch pipes 39a and 39b in the middle and is connected to the central buffer chamber 35 and the peripheral buffer chamber 36 respectively. The branch pipes 39a and 39b have flow control valves 40a and 40b (flow control devices) respectively. The conductivity of the flow path from the processing gas supply source 38 to the central buffer chamber 35 and the conductivity of the flow path from the processing gas supply source 38 to the peripheral buffer chamber 36 are set to be equal. Therefore, by adjusting the flow control valves 40a and 40b, the flow ratio of the processing gas supplied to the central buffer chamber 35 and the processing gas supplied to the peripheral buffer chamber 36 can be arbitrarily adjusted. In addition, a mass flow controller (MFC) 41 and an opening and closing valve 42 are arranged on the gas supply pipe 39.

[0058] According to the above structure, the plasma processing apparatus 1 adjusts the flow ratio of the processing gas introduced into the central buffer chamber 35 and the processing gas introduced into the peripheral buffer chamber 36, thereby arbitrarily adjusting the ratio (FC / FE) of the flow rate FC of the gas ejected from the central nozzle and the flow rate FE of the gas ejected from the peripheral nozzle. In addition, the flow rate per unit area of the processing gas ejected from the central nozzle and the peripheral nozzle can be adjusted separately. Moreover, by configuring two processing gas supply sources corresponding to the branch pipes 39a and 39b, respectively, the gas type or gas mixing ratio of the processing gas ejected from the central nozzle and the peripheral nozzle can be set independently or individually. However, this is not limited to this, and the plasma processing apparatus 1 can also be set to be unable to adjust the ratio of the flow rate FC of the gas ejected from the central nozzle and the flow rate FE of the gas ejected from the peripheral nozzle.

[0059] Furthermore, the electrode support 33 of the inner upper electrode 24 is electrically connected to the upper high-frequency power supply 31 via the upper matching unit 27, the upper power supply rod 28, the connector 29, and the upper power supply cylinder 44. A variable capacitor 45 capable of variably adjusting the capacitance is disposed midway within the upper power supply cylinder 44. Furthermore, a refrigerant chamber or cooling jacket (not shown) may also be provided in the outer upper electrode 23 and the inner upper electrode 24, and the temperature of the electrodes may be controlled using refrigerant supplied from an external cooling unit (not shown).

[0060] An exhaust port 46 is provided at the bottom of the chamber 10. An automatic pressure control valve (hereinafter referred to as "APC valve") 48, which is a variable butterfly valve, and a turbomolecular pump (hereinafter referred to as "TMP") 49 are connected to the exhaust port 46 via an exhaust manifold 47. The APC valve 48 and the TMP 49 cooperate to reduce the pressure of the plasma generation space S in the chamber 10 to a desired vacuum level. In addition, an annular partition 50 having a plurality of vents is arranged between the exhaust port 46 and the plasma generation space S in a manner surrounding the base 13. The partition 50 prevents plasma from leaking from the plasma generation space S to the exhaust port 46. That is, the plasma generation space S is an example of a processing chamber, and the exhaust space E from the partition 50 to the exhaust port 46 is an example of an exhaust chamber.

[0061] In addition, an opening 51 for loading and unloading wafers W is provided on the outer sidewall of the chamber 10, and a gate valve 52 is provided to open and close the opening 51. A first sedimentation shield 71 and a second sedimentation shield 72 are detachably provided along the inner wall of the chamber 10. The first sedimentation shield 71 is the upper member of the sedimentation shield and is located above the opening 51 of the chamber 10. The second sedimentation shield 72 is the lower member of the sedimentation shield and is located below the partition 50. The lower portion of the first sedimentation shield 71 contacts the upper portion of the valve body 81 of the gate mechanism, thereby closing the opening 51. The first sedimentation shield 71 and the second sedimentation shield 72 can be formed, for example, by coating aluminum with a ceramic such as Y2O3. Furthermore, the lower portion of the first sediment shield 71 is covered with a conductive material, such as stainless steel or nickel alloy, so as to be electrically conductive with the valve body 81 in contact therewith.

[0062] Wafers W are loaded and unloaded by opening and closing the gate valve 52. After loading and unloading are completed and the gate valve 52 is closed, the valve body 81 is used to separate the first and second deposition shields 71 and 72, and to isolate the opening 51 of the chamber 10 from the plasma generation space S. The valve body 81 is driven up and down by the lifting mechanism 82 to open and close the opening 51 between the first and second deposition shields 71 and 72. The lifting mechanism 82 is, for example, located below the second deposition shield 72. The valve body 81 and the lifting mechanism 82 can also be collectively referred to as a gate mechanism. In other words, the valve body 81 is provided at least partially near the side wall of the chamber 10, separating the processing chamber from the exhaust chamber, and is a shielding member that can be driven in the vertical direction. In addition, the valve body 81 has a hole connecting the plasma generation space S (processing chamber) and the exhaust space E (exhaust chamber) at the portion connected to the sleeve 91 described later.

[0063] Furthermore, in the plasma processing apparatus 1, a lower high-frequency power supply (first high-frequency power supply) 59 is electrically connected to the susceptor 13, which serves as the lower electrode, via a lower matching device 58. The lower matching device 58 is used to match the load impedance with the internal (or output) impedance of the lower high-frequency power supply 59. When plasma is generated in the plasma generation space S within the chamber 10, the lower matching device 58 functions to make the internal impedance of the lower high-frequency power supply 59 and the load impedance appear to be consistent. Furthermore, a second lower high-frequency power supply (second high-frequency power supply) may be connected to the lower electrode.

[0064] In the plasma processing apparatus 1, a low-pass filter (LPF) 61 is electrically connected to the inner upper electrode 24. This low-pass filter (LPF) 61 grounds the high-frequency power from the lower high-frequency power source 59, rather than the high-frequency power from the upper high-frequency power source 31. Preferably, the LPF 61 is formed of an LR filter or an LC filter. However, since a single conductor can also impart sufficiently high reactance to the high-frequency power from the upper high-frequency power source 31, a single conductor may be electrically connected to the inner upper electrode 24 in place of the LR or LC filter. Furthermore, a high-pass filter (HPF) 62 is electrically connected to the base 13 for grounding the high-frequency power from the upper high-frequency power source 31.

[0065] A sleeve drive mechanism 90 is provided on the side wall of the chamber 10. The sleeve drive mechanism 90 includes a sleeve 91 and a drive mechanism 92. A pipe 93 is connected to the lower portion of the drive mechanism 92. Pipe 93 connects the drive mechanism 92 to capacitance pressure gauges 94a and 94b. In the following description, capacitance pressure gauges 94a and 94b are collectively referred to as capacitance pressure gauges 94. Furthermore, multiple sleeve drive mechanisms 90 and capacitance pressure gauges 94 may be provided.

[0066] The sleeve 91 is a hollow relay member that penetrates the side wall of the chamber 10 and contacts the valve body 81. It connects the pipe 93 and the plasma generation space S, which serves as the processing chamber, via a hole provided in the valve body 81. The drive mechanism 92 drives the drive shaft 95 connected to the sleeve 91 in the horizontal direction, thereby being able to contact or separate the sleeve 91 from the valve body 81. The capacitance pressure gauge 94a can measure pressure within the range of 0mT to 10T (0Pa to 1333Pa). The capacitance pressure gauge 94b can measure pressure within the range of 0mT to 250mT (0Pa to 33.3Pa). In addition, in this embodiment, two capacitance pressure gauges 94a and 94b with different measurement ranges are provided, but the pressure gauges are not limited to this, and one or more capacitance pressure gauges 94 may also be provided. In addition, a valve can be provided in the pipe 93 to protect the capacitance pressure gauge 94 when the atmosphere in the chamber 10 is open. In addition, the pressure gauge is not limited to the capacitance pressure gauge 94, and a Pirani type vacuum gauge or the like may also be used.

[0067] The control unit 5 includes a memory, a processor, and an input / output interface. The processor in the control unit 5 reads and executes a program stored in the memory of the control unit 5 to control various components of the plasma processing apparatus 1 via the input / output interface of the control unit 5.

[0068] Next, when etching is performed in the plasma processing apparatus 1, gate valve 52 and valve body 81 are first opened, and a wafer W to be processed is introduced into the chamber 10 and placed on the susceptor 13. Then, a process gas, such as a mixture of C4F8 gas and argon (Ar) gas, is introduced from the process gas supply source 38 at a predetermined flow rate and flow ratio into the central buffer chamber 35 and the peripheral buffer chamber 36. Furthermore, the pressure of the plasma generation space S within the chamber 10 is set to a value suitable for etching, such as any value within the range of several mTorr to 1 Torr, using the APC valve 48 and the TMP 49.

[0069] Furthermore, high-frequency power for plasma generation is applied at a predetermined power level to the upper electrodes 22 (outer upper electrode 23 and inner upper electrode 24) by the upper high-frequency power source 31, and high-frequency power for biasing the lower electrode of the susceptor 13 is applied at a predetermined power level from the lower high-frequency power source 59. Furthermore, a DC voltage is applied from the DC power source 16 to the electrode plate 15 of the electrostatic chuck 14, thereby electrostatically adhering the wafer W to the susceptor 13.

[0070] Then, plasma is generated in the plasma generating space S by the processing gas ejected from the shower head, and the processing surface of the wafer W is physically or chemically etched by the radicals and ions generated at this time.

[0071] In the plasma processing apparatus 1, high-frequency radiation in a relatively high frequency range (a frequency range where ions cannot move) is applied to the upper electrode 22, thereby increasing the density of plasma in a preferred dissociated state. Furthermore, high-density plasma can be formed even under lower pressure conditions.

[0072] Furthermore, in the upper electrode 22, the outer upper electrode 23 is used as the primary high-frequency electrode for generating plasma, and the inner upper electrode 24 is used as the secondary high-frequency electrode. The ratio of the electric field strength applied to electrons directly below the upper electrode 22 can be adjusted by the upper high-frequency power supply 31 and the lower high-frequency power supply 59. Therefore, the spatial distribution of ion density in the radial direction can be controlled, and the spatial characteristics of reactive ion etching can be arbitrarily and finely controlled.

[0073] [Details of the Sleeve Driving Mechanism 90]

[0074] Figure 2 1 is a partially enlarged view showing an example of a cross section of the sleeve drive mechanism of this embodiment. Figure 2 As shown, the drive shaft 95 of the drive mechanism 92 has a cylindrical flange at the portion connected to the sleeve 91. This flange is hollow, allowing the interior of the flange to communicate with the sleeve 91 and the piping 93. A bellows 97 connects the flange to the drive mechanism 92, isolating the hollow portion of the flange from the exterior of the drive mechanism 92. A drive unit 96 drives the drive shaft 95 horizontally toward the center and outward of the chamber 10, causing the end of the sleeve 91 near the center of the chamber 10, i.e., the side in contact with the valve body 81, to move in a manner that allows it to protrude and retract relative to the inner side of the sidewall of the chamber 10 (hereinafter referred to as the inner wall). The drive unit 96 is, for example, an actuator such as a motor or a cylinder, and can be adapted to be a member capable of driving the drive shaft 95 horizontally. The bellows 97 is configured to be retractable. The bellows 97 connects the flange of the drive shaft 95 to the inner wall of the drive mechanism 92.

[0075] Figure 3 FIG. 1 is a diagram showing an example of the surface of the shield member in contact with the sleeve according to the present embodiment. Figure 3As shown, in the case of a surface-contact type, an O-ring 85 and a hole 86 are provided on the surface of the valve body 81, which serves as a shielding member, that contacts the sleeve 91. While this contact surface is flat, it can also be curved if the radius of the curved surface of the valve body 81 is large. Furthermore, if the contact surface is curved, the sleeve 91 can be tightly fitted by deforming the O-ring 85, or the end of the sleeve 91 can be aligned with the radius of the valve body 81. The O-ring 85 is attached to the valve body 81 by providing a bolt groove or the like on the surface of the valve body 81. The O-ring 85 contacts the end of the sleeve 91, sealing the space inside the sleeve 91. The hole 86 connects the plasma generation space S side of the valve body 81 with the exhaust space E side. The sleeve 91 is tightly fitted to the valve body 81 via the O-ring 85, connecting the plasma generation space S and the space inside the sleeve 91 while being disconnected from the exhaust space E.

[0076] Figure 2 The state shown in FIG. 1 indicates that the sleeve 91 is in contact with the valve body 81. In this state, the plasma generation space S (processing chamber) and the pipe 93 are connected via the hole 86 provided in the valve body 81, the sleeve 91, the flange of the drive shaft 95, and the hollow portion within the drive mechanism 92. The pressure in the plasma generation space S is transmitted to the capacitance pressure gauge 94. At this time, the pressure measured by the capacitance pressure gauge 94 is not affected by interference from the exhaust space E and the like.

[0077] Next, when the drive shaft 95 is moved toward the outside of the chamber 10, the sleeve 91 separates from the valve body 81, and the end of the sleeve 91 that was in contact with the valve body 81 retreats relative to the inner wall of the chamber 10. In other words, a gap is created between the valve body 81 and the sleeve 91. In this state, the plasma generation space S (processing chamber), the exhaust space E (exhaust chamber), and the piping 93 are connected via the hole 86 provided in the valve body 81. Furthermore, the valve body 81 becomes movable in the vertical direction.

[0078] Figure 4 This is a diagram showing an example of the arrangement of the O-ring between the shield member and the sleeve according to the present embodiment. Figure 4The diagram shows a state 100 in which the sleeve 91 is in contact with the valve body 81, and a state 101 in which the sleeve 91 is separated from the valve body 81, in the case of a surface-contact type in which the O-ring 85 is positioned on the valve body 81 side. As shown in state 100, when the sleeve 91 is in contact with the valve body 81 via the O-ring 85, the plasma generation space S, the interior space of the hole 86, and the interior space of the sleeve 91 are sealed. On the other hand, as shown in state 101, when the sleeve 91 is separated from the valve body 81 and not in contact with the O-ring 85, the plasma generation space S, the interior space of the hole 86, and the interior space of the sleeve 91 are not sealed and communicate with the exhaust space E.

[0079] O-ring 85 can also be provided on the side of sleeve 91, using Figure 5 This situation will be described. Figure 5 This is a diagram showing another example of the arrangement of the O-ring between the shield member and the sleeve according to the present embodiment. Figure 5 In the case of a surface contact type in which the O-ring 85a is arranged on the sleeve 91 side, a state 102 in which the sleeve 91 and the valve body 81 are in contact with each other and a state 103 in which the sleeve 91 and the valve body 81 are separated from each other are shown. Figure 5 In the embodiment, an O-ring 85a is attached to the tip of the sleeve 91 by bonding, welding, CVD (Chemical Vapor Deposition), or the like. As shown in state 102, when the O-ring 85a provided at the tip of the sleeve 91 is in contact with the valve body 81, the plasma generation space S, the interior space of the hole 86, and the interior space of the sleeve 91 are sealed. Alternatively, as shown in state 103, when the sleeve 91 is separated from the valve body 81 and the O-ring 85a is not in contact with the valve body 81, the plasma generation space S, the interior space of the hole 86, and the interior space of the sleeve 91 are not sealed and communicate with the exhaust space E.

[0080] [Operation of the Sleeve Driving Mechanism 90]

[0081] Next, use Figure 6 The movement between the valve body 81 and the sleeve 91 will be described. Figure 6 : is a diagram showing an example of the operation of the sleeve drive mechanism of this embodiment. Figure 6 As shown in state 110, during the processing, that is, when plasma P is generated in the plasma generating space S of the chamber 10, the sleeve 91 is in contact with the valve body 81, and the pressure of the plasma generating space S is transmitted to the capacitance pressure gauge 94 via the sleeve 91 and the piping 93.

[0082] When processing is complete, as shown in state 111, the control unit 5 drives the sleeve 91 toward the outside of the chamber 10 (step S1). Furthermore, the control unit 5 detects the movement of the sleeve 91 using a sensor (not shown) located within the drive mechanism 92. State 111 represents a standby state before the wafer W to be processed is transported. At this time, the pressure measured by the capacitance manometer 94 is the pressure within the chamber 10, including the plasma generation space S and the exhaust space E. In other words, the capacitance manometer 94 can also monitor the pressure within the chamber 10 when pressure adjustment is performed during transport.

[0083] When the pressure adjustment for transporting the wafer W is completed, the controller 5 lowers the valve body 81 and opens the gate valve 52 as shown in state 112, thereby unloading the wafer W from the opening 51 (step S2). Furthermore, the capacitance pressure gauge 94 can monitor the pressure in the chamber 10 during unloading.

[0084] When the wafers W are carried out and the wafer W to be processed next is carried in, the control unit 5 closes the gate valve 52 and raises the valve body 81 (step S3 ).

[0085] When the valve body 81 is raised, the control unit 5 drives the sleeve 91 toward the center side of the chamber 10 so that the end of the sleeve 91 contacts the valve body 81 (step S4). When the end of the sleeve 91 contacts the valve body 81, the control unit 5 controls the APC valve 48 and the TMP 49 while monitoring the pressure of the plasma generation space S using the capacitance pressure gauge 94 so that the pressure of the plasma generation space S becomes a specified pressure. When the pressure becomes suitable for the treatment, plasma is generated and the treatment is performed. In this way, in this embodiment, when measuring the pressure of the plasma generation space S, since the movable sleeve 91 is in contact with the valve body 81 serving as a shielding member, the plasma generation space S can be separated from the exhaust space E. In other words, the pressure can be accurately measured even at the driving position. In addition, a plurality of pressure gauges can be provided regardless of the driving position, so that the pressure distribution in the chamber 10 can be measured.

[0086] [Method of Driving Sleeve 91]

[0087] Next, use Figure 7 A method of driving the sleeve 91 will be described. Figure 7 This is a flowchart showing an example of the sleeve driving process according to the present embodiment.

[0088] First, when the end of the sleeve 91 on the center side of the chamber 10 is in contact with the shielding member (valve body 81), the control unit 5 drives the sleeve 91 toward the outside of the chamber 10 to separate the sleeve 91 from the valve body 81 (step S11).

[0089] The control unit 5 drives the shielding member (valve body 81) from the upper end to the lower end (step S12). The control unit 5 sends the wafer W into the chamber 10, or sends the wafer W out of the chamber 10 (step S13). The control unit 5 drives the shielding member (valve body 81) from the lower end to the upper end (step S14). The control unit 5 drives the sleeve 91 toward the center of the chamber 10, and connects the end of the sleeve 91 on the side of the center direction of the chamber 10 to the shielding member (valve body 81) (step S15). In this way, in this embodiment, the sleeve 91 for measuring pressure contacts or separates according to the drive of the shielding member (valve body 81), so the pressure can be accurately measured also at the driving part such as the valve body 81.

[0090] [Various Modifications of the Sleeve Driving Mechanism 90]

[0091] In the above embodiment, a bellows 97 is provided on the flange of the drive shaft 95, and a driving portion 96 is provided on the outside of the drive mechanism 92 to drive the sleeve 91 in the horizontal direction. However, other structures may be used, and the embodiment in this case will be described with reference to Modifications 1 to 3. The plasma processing apparatuses of Modifications 1 to 3 are the same as the plasma processing apparatus 1 of the above embodiment, and therefore, descriptions of the overlapping structures and operations will be omitted.

[0092] Figure 8 1 is a partially enlarged view showing an example of a cross section of the sleeve drive mechanism of Modification 1. Figure 8 As shown, compared to the embodiment, the sleeve drive mechanism 90a of Modification 1 includes a sleeve 91a, a connecting portion 92a, a drive portion 96a, and shaft seals 97a and 97b, replacing the sleeve 91, drive mechanism 92, drive shaft 95, drive portion 96, and bellows 97. The sleeve 91a is connected at its center to the cylinder of the drive portion 96a and is driven horizontally in response to the movement of the cylinder. The connecting portion 92a connects the drive portion 96a to the piping 93. Furthermore, the space inside the connecting portion 92a accommodates the end of the sleeve 91a facing outward from the chamber 10 when the sleeve 91a is driven outward from the chamber 10. The drive portion 96a drives the sleeve 91a using the cylinder. Shaft seals 97a and 97b seal (enclose) the space communicating with the interior of the sleeve 91a on the side of the drive portion 96a facing the side wall of the chamber 10 and on the side of the connecting portion 92a.

[0093] Figure 9 1 is a partially enlarged view showing an example of a cross section of the sleeve drive mechanism of Modification 2. Figure 9As shown, compared to the embodiment, the sleeve drive mechanism 90b of Modification 2 includes a sleeve 91b, a connecting portion 92b, a drive shaft 95a, a drive portion 96b, and bellows 97c and 97d, replacing the sleeve 91, drive mechanism 92, drive shaft 95, drive portion 96, and bellows 97. The sleeve 91b is connected to the drive shaft 95a at its end facing the outside of the chamber 10, and is driven horizontally in response to the movement of the drive shaft 95a by the drive portion 96b. The connecting portion 92b connects the bellows 97d and the piping 93. The drive shaft 95a is positioned approximately parallel to the side wall of the chamber 10. The sleeve 91b extends through one end of the drive shaft 95a and is connected to the sleeve 91b so as to hold the sleeve 91b at a right angle. The other end of the drive shaft 95a is connected to the drive portion 96b. The drive unit 96b drives the sleeve 91b and drive shaft 95a horizontally by sliding the end of the drive shaft 95a toward the center and outward of the chamber 10. The bellows 97c and 97d are designed to be retractable. The bellows 97c connects the side of the drive shaft 95a that faces the center of the chamber 10 to the outer wall of the chamber 10. The bellows 97d connects the side of the drive shaft 95a that faces the outward of the chamber 10 to the connecting unit 92b. The bellows 97c and 97d seal the space communicating with the interior of the sleeve 91b.

[0094] Figure 10 1 is a partially enlarged view showing an example of a cross section of the sleeve drive mechanism of Modification 3. Figure 10 As shown, compared to the embodiment, the sleeve drive mechanism 90c of Modification 3 includes a shaft seal 98 instead of the bellows 97. The shaft seal 98 seals (seals) the space between the drive shaft 95 and the drive mechanism 92. In other words, the shaft seal 98 seals the space communicating with the interior of the sleeve 91.

[0095] In the sleeve drive mechanisms 90a, 90b, and 90c of modifications 1 to 3, similar to the sleeve drive mechanism 90 of the embodiment, the sleeves 91a, 91b, and 91 are brought into contact or separated according to the drive of the shielding member (valve body 81), so the pressure can be accurately measured also at the driving portion such as the valve body 81.

[0096] [Various Modifications of the Contact Surface between the Shield Member and the Sleeve]

[0097] In the above embodiment, the sleeve 91 is in contact with the wall surface of the shield member (valve body 81) via the O-ring 85. However, a recessed portion into which the end of the sleeve 91 can be inserted may be provided in the wall surface of the shield member (valve body 81). Embodiments in this case will be described with reference to Modifications 4 to 7. The plasma processing apparatuses of Modifications 4 to 7 are identical to the plasma processing apparatus 1 of the above embodiment, and therefore, descriptions of the overlapping structures and operations will be omitted.

[0098] Figure 11 FIG. 1 is a diagram showing an example of the surface of the shield member in contact with the sleeve according to Modifications 4 to 7. Figure 11 As shown, a recess 87 is provided on the surface of the valve body 81 serving as a shielding member that is in contact with the sleeve 91. A plurality of holes 86a are provided on the bottom surface of the recess 87. In addition, a groove 88 for inserting an O-ring is provided on the bottom surface of the recess 87. In addition, when an O-ring is provided on the end side of the sleeve 91, it is not necessary to provide the groove 88. The hole 86a connects the plasma generation space S side of the valve body 81 with the exhaust space E side. By inserting the sleeve 91 into the recess 87 and fitting it tightly with the valve body 81 with the help of the O-ring, the plasma generation space S is connected to the space inside the sleeve 91 and is disconnected from the exhaust space E. In addition, in the case of a surface-contact type in which an O-ring is provided at the groove 88 or the end of the sleeve 91, a gap exists between the side surface 87a of the recess 87 and the sleeve 91. In addition, in the following modified examples 4 to 7, Figures 12 to 15 The shield member (valve body 81), the O-ring, and the sleeve 91 in the AA cross section are shown. In the following drawings, the deformation of the O-ring is omitted.

[0099] Figure 12 1 is a diagram showing an example of arrangement of an O-ring between a shield member and a sleeve according to Modification 4. Modification 4 is an example of a surface contact type in which a recessed portion 87 is provided. Figure 12 The diagram shows a state 120 where the sleeve 91 is inserted into the recess 87, with the O-ring 85 fitted into the groove 88 and positioned on the valve body 81 side, and a state 121 where the sleeve 91 is removed from the recess 87. As shown in state 120, when the sleeve 91 is in contact with the bottom of the recess 87 via the O-ring 85, the plasma generation space S is sealed from the interior of the hole 86a and the interior of the sleeve 91. Furthermore, as shown in state 121, when the sleeve 91 is removed from the recess 87 and not in contact with the O-ring 85, the plasma generation space S is not sealed from the interior of the hole 86a and the interior of the sleeve 91, but communicates with the exhaust space E.

[0100] Figure 13 1 is a diagram showing an example of the arrangement of the O-ring between the shield member and the sleeve according to Modification 5. Modification 5 is an example of a surface contact type in which a recessed portion 87 is provided. Figure 13 12 shows a state 122 where the sleeve 91 is inserted into the recess 87 and a state 123 where the sleeve 91 is removed from the recess 87 when the O-ring 85a is arranged on the sleeve 91 side. Figure 13 In the embodiment, an O-ring 85a is provided at the top end of the sleeve 91 by bonding, welding, CVD or the like. Figure 13 In the embodiment, groove 88 is not provided in recess 87. As shown in state 122, when the O-ring 85a provided at the end of sleeve 91 contacts the bottom of recess 87, the plasma generation space S is sealed from the interior space of hole 86a and the interior space of sleeve 91. Furthermore, as shown in state 123, when sleeve 91 is removed from recess 87 and O-ring 85a is not in contact with the bottom of recess 87, the plasma generation space S is not sealed from the interior space of hole 86a and the interior space of sleeve 91, and communicates with exhaust space E.

[0101] Figure 14 1 is a diagram showing an example of the arrangement of an O-ring between a shield member and a sleeve according to Modification 6. Modification 6 is an example of a shaft seal type in which a recessed portion 87 is provided. Figure 14 124 shows a state where the sleeve 91 is inserted into the recess 87 and 125 shows a state where the sleeve 91 is removed from the recess 87 when the O-ring 85b is arranged on the side surface 87a of the recess 87. Figure 14 In the embodiment, the groove 88 is not provided in the recess 87. As shown in state 124, when the sleeve 91 is inserted into the recess 87 and the O-ring 85b is in contact with the end side of the sleeve 91, the plasma generation space S is sealed from the internal space of the hole 86a and the internal space of the sleeve 91. On the other hand, as shown in state 125, when the sleeve 91 is removed from the recess 87 and the O-ring 85b is not in contact with the end side of the sleeve 91, the plasma generation space S is not sealed from the internal space of the hole 86a and the internal space of the sleeve 91, and is in communication with the exhaust space E.

[0102] Figure 15 1 is a diagram showing an example of the arrangement of an O-ring between a shield member and a sleeve according to Modification 7. Modification 7 is an example of a shaft seal type in which a recessed portion 87 is provided. Figure 15 126 shows a state where the sleeve 91 is inserted into the recess 87 and 127 shows a state where the sleeve 91 is removed from the recess 87 when the O-ring 85c is arranged on the side surface of the end portion of the sleeve 91. Figure 15 In the embodiment, the O-ring 85c is embedded in a groove (not shown) provided on the side surface of the end portion of the sleeve 91, or is provided by bonding, welding, CVD, etc. Figure 15In the embodiment, groove 88 is not provided in recess 87. As shown in state 126, when O-ring 85c provided on the side surface of the end of sleeve 91 contacts side surface 87a of recess 87, plasma generation space S is sealed from the interior space of hole 86a and the interior space of sleeve 91. Furthermore, as shown in state 127, when sleeve 91 is removed from recess 87 and O-ring 85c is no longer in contact with side surface 87a of recess 87, plasma generation space S is not sealed from the interior space of hole 86a and the interior space of sleeve 91, but communicates with exhaust space E. In modifications 4 to 7, since recess 87 is provided in valve body 81, the electrical conductivity of hole 86a is greater (better) than the electrical conductivity of hole 86 in the embodiment.

[0103] [Variations in Which the Sleeve End Can Be Inserted into the Shield Member]

[0104] In Modifications 4 to 7, the contact surface of the valve body 81 with the sleeve 91 is provided with a recess 87. However, a through-hole for inserting the sleeve may be provided in the valve body 81, and the tip of the sleeve may be formed into a bag shape so as to be exposed to the plasma generation space S. Modifications 8 to 12 will be used to describe the embodiment of this case. The plasma processing apparatuses of Modifications 8 to 12 are the same as the plasma processing apparatus 1 of the above-described embodiment, and therefore descriptions of the overlapping structures and operations will be omitted.

[0105] Figure 16 FIG. 1 is a diagram showing an example of the surface of the shield member in contact with the sleeve according to Modifications 8 to 12. Figure 16 As shown in FIG, a through hole 89 is provided on the surface of the valve body 81 as a shielding member for inserting the sleeve. Figure 16 In the embodiment, the wall surface provided with the through hole 89 is processed into a plane, and the through hole 89 is opened in such a manner that the side surface 89a is substantially perpendicular to the plane. Figures 17 to 20 as well as Figure 23 The shield member (valve body 81 ), the O-ring, and the sleeve are shown in the BB cross section. Note that the deformation of the O-ring is omitted in the following drawings.

[0106] Figure 17 1 is a diagram showing an example of the arrangement of an O-ring between a shield member and a sleeve according to Modification 8. Modification 8 is an example of a surface contact type in which a through hole 89 is provided. Figure 17 12 shows a state 128 where the sleeve 91c is inserted into the through hole 89 and a state 129 where the sleeve 91c is removed from the through hole 89 when the O-ring 85d is arranged around the through hole 89 of the valve body 81. Figure 17The illustrated sleeve 91c has a surface 91d formed so that the tip portion of the sleeve 91c forms a bag shape. Furthermore, the surface 91d is provided with a plurality of holes 91e. The sleeve 91c is also provided with a stopper 91f to prevent the sleeve 91c from being inserted into the through-hole 89 of the valve body 81 beyond a predetermined distance into the chamber 10. The stopper 91f is formed so that its tip surface 91g contacts the O-ring 85d.

[0107] As shown in state 128, when the surface 91g of the sleeve 91c is in contact with the O-ring 85d, the plasma generation space S is sealed from the internal space of the hole 91e and the internal space of the sleeve 91c. Alternatively, as shown in state 129, when the sleeve 91c is removed from the through-hole 89 and the O-ring 85d is not in contact with the surface 91g, the plasma generation space S is not sealed from the internal space of the hole 91e and the internal space of the sleeve 91c, and communicates with the exhaust space E.

[0108] Figure 18 This figure shows an example of the placement of an O-ring between a shield member and a sleeve according to Modification 9. Modification 9 is an example of a surface-contact type in which a through-hole 89 is provided. Sleeve 91c in Modification 9 has surface 91d, hole 91e, stopper 91f, and surface 91g, similar to Modification 8. Figure 18 130 shows a state where the sleeve 91c is inserted into the through hole 89 and a state where the sleeve 91c is removed from the through hole 89 when the O-ring 85e is arranged on the surface 91g of the stopper 91f. Figure 18 The O-ring 85e is installed by fitting it into a groove (not shown) provided in the surface 91g, or by using bonding, welding, CVD, etc.

[0109] As shown in state 130, when the periphery of the through-hole 89 is in contact with the O-ring 85e, the plasma generation space S is sealed from the interior space of the hole 91e and the interior space of the sleeve 91c. Alternatively, as shown in state 131, when the sleeve 91c is removed from the through-hole 89 and the periphery of the through-hole 89 is no longer in contact with the O-ring 85e, the plasma generation space S is not sealed from the interior space of the hole 91e and the interior space of the sleeve 91c, but communicates with the exhaust space E.

[0110] Figure 19 This figure shows an example of the arrangement of an O-ring between a shield member and a sleeve according to Modification 10. Modification 10 is an example of a shaft seal type in which a through-hole 89 is provided. Sleeve 91c in Modification 10 has a surface 91d, a hole 91e, and a stopper 91f, similar to Modification 8. Figure 1913 shows a state 132 where the sleeve 91c is inserted into the through hole 89 and a state 133 where the sleeve 91c is removed from the through hole 89 when the O-ring 85f is arranged on the side surface 89a of the through hole 89. Figure 19 The O-ring 85f is installed by fitting it into a groove (not shown) provided in the side surface 89a, or by using bonding, welding, CVD, etc.

[0111] As shown in state 132, when the end side surface 91h of the sleeve 91c is in contact with the O-ring 85f, the plasma generation space S is sealed from the internal space of the hole 91e and the internal space of the sleeve 91c. Alternatively, as shown in state 133, when the sleeve 91c is removed from the through-hole 89 and the end side surface 91h of the sleeve 91c is not in contact with the O-ring 85f, the plasma generation space S is not sealed from the internal space of the hole 91e and the internal space of the sleeve 91c, and communicates with the exhaust space E.

[0112] Figure 20 This figure shows an example of the arrangement of an O-ring between a shield member and a sleeve according to Modification 11. Modification 11 is an example of a shaft seal type in which a through-hole 89 is provided. Sleeve 91c in Modification 11 has a surface 91d, a hole 91e, and a stopper 91f, similar to Modification 8. Figure 20 134 shows a state where the sleeve 91c is inserted into the through hole 89 and 135 shows a state where the sleeve 91c is removed from the through hole 89 when the O-ring 85g is arranged on the end side surface 91h of the sleeve 91c. Figure 20 The O-ring 85g is installed by fitting it into a groove (not shown) provided on the end side surface 91h of the sleeve 91c, or by using bonding, welding, CVD, etc.

[0113] As shown in state 134, when the side surface 89a of the through-hole 89 is in contact with the O-ring 85g, the plasma generation space S, the internal space of the hole 91e, and the internal space of the sleeve 91c are sealed from the exhaust space E. On the other hand, as shown in state 135, when the sleeve 91c is pulled out of the through-hole 89 and the side surface 89a of the through-hole 89 is not in contact with the O-ring 85g, the plasma generation space S, the internal space of the hole 91e, and the internal space of the sleeve 91c are not sealed and communicate with the exhaust space E.

[0114] Here, use Figure 21 The method for retaining an O-ring in a shaft seal is described. Figure 21 This is a diagram showing an example of a method for retaining an O-ring in the case of a shaft seal. Figure 21, O-ring retaining methods 136 and 137 are illustrated. In retaining method 136, for example, a square groove 138 is provided in sleeve 91i, and the O-ring is retained by the square groove 138, thereby maintaining a sealed state between sleeve 91i and the target side, such as chamber 10, valve body 81, and connection portion 92a. In addition, when the square groove 138 cannot be provided, the O-ring is provided by bonding, welding, CVD, etc. In retaining method 137, for example, a flange 91k is provided at the end of sleeve 91j, and the O-ring is retained in the triangular groove 139, which is the contact portion between the flange 91k and the target side end, such as chamber 10, valve body 81, and connection portion 92a, thereby maintaining a sealed state.

[0115] Next, use Figure 22 The shape of the distal end portion of the sleeve 91 c on the central direction side of the chamber 10 will be described. Figure 22 : is a diagram showing an example of the shape of the top end portion of the sleeve. Figure 22 In FIG, R of the valve body 81 as a shielding member is prominently depicted. Figure 22 , states 140 and 141 of the shape of the tip of sleeve 91c are illustrated, when sleeve 91c is inserted into through-hole 89, as in Modifications 8 to 12. State 140 illustrates a case where surface 91d of the tip of sleeve 91c is flat, with the valve body 81, as a shielding member, partially convex or concave in the circumferential direction. Furthermore, in state 141, surface 91m of the tip of sleeve 91c is a curved surface that matches the rounded corners of valve body 81, resulting in a smooth curved surface in the portion in contact with valve body 81. With surface 91m as shown in state 141, the effects on the plasma generated in plasma generation space S can be further reduced.

[0116] Next, use Figure 23 and Figure 24 A modification example in which an O-ring is not used will be described. Figure 23 1 is a diagram showing an example of connection between a shield member and a sleeve according to Modification 12. In the sleeve 91c according to Modification 12, similarly to Modification 8, it has a surface 91d, a hole 91e, and a stopper 91f. Figure 23 A state 142 is shown in which the sleeve 91 c is inserted into the through hole 89 without using an O-ring.

[0117] As shown in state 142, when the gap between the side surface 89a of the through-hole 89 and the side surface of the end portion of the sleeve 91c is small, the interference from the exhaust space E indicated by path 143 is smaller than that from the plasma generation space S through the hole 91e to the interior of the sleeve 91. In other words, the electrical conductivity of path 143 is lower than that of path 144. Therefore, the influence on the pressure measurement by the capacitance pressure gauge 94 is relatively small.

[0118] Figure 24 1 is a diagram showing an example of connection between a shield member and a sleeve according to Modification 13. Figure 24 , other connection methods 145 and 146 that do not use O-rings are illustrated. Connection method 145 is a case where the valve body 81 is provided with a stepped recess 87b and a sleeve 91n is used whose top end is shaped to fit into the recess 87b. Connection method 146 is a case where the valve body 81 is provided with a recess 87c having an annular protrusion on the outer periphery and a sleeve 91p is used whose top end is shaped to fit into the annular protrusion of the recess 87c. In connection methods 145 and 146, the shapes of the recesses 87b and 87c provided on the wall surface of the shielding member (valve body 81) and the ends of the sleeves 91n and 91p are combined to form a labyrinth structure, thereby reducing interference from the exhaust space E, that is, electrical conductivity.

[0119] As described above, according to this embodiment, a substrate processing apparatus (plasma processing apparatus 1) includes a chamber 10, a shielding member (valve body 81), and a relay member (sleeve 91). The chamber 10 includes a processing chamber (plasma generation space S) for processing a substrate using introduced gas, and an exhaust chamber (exhaust space E) for exhausting gas from the processing chamber. The shielding member is provided at least partially near the sidewall of the chamber 10, separating the processing chamber from the exhaust chamber. A hole 86 is provided in a portion of the shielding member's wall surface parallel to the sidewall of the chamber 10, connecting the processing chamber and the exhaust chamber. The shielding member is movable in the vertical direction. The relay member is hollow and connected to a pipe 93 connected to a measuring instrument (capacitance pressure gauge 94) outside the chamber 10. The relay member is movable in the horizontal direction. When the shielding member reaches the upper end, the relay member is driven toward the center of the chamber, so that the end of the relay member toward the center is connected to the shielding member, and the processing chamber and the pipe 93 are connected via the hole 86. As a result, the state (eg, pressure) within the processing chamber can be accurately measured also at a driving portion such as a shield member.

[0120] Furthermore, according to this embodiment, one or more holes 86 are provided in the wall surface with which the relay member contacts within a range smaller than the inner diameter of the relay member. As a result, the pressure of the plasma generation space S can be measured using a pressure gauge (capacitance pressure gauge 94) outside the chamber 10.

[0121] According to Modifications 4 to 7, the shield member has a recess 87 outside the wall surface with which the relay member contacts, into which the center end of the relay member can be inserted. As a result, the electrical conductivity of the shield member wall surface can be increased.

[0122] Furthermore, according to Modifications 4 and 5, an O-ring (85, 85a) is provided on the wall surface with which the relay member contacts or on the end portion of the relay member on the central direction side. When the end portion of the relay member on the central direction side contacts the wall surface, the O-ring (85, 85a) seals the space between the processing chamber and the exhaust chamber. As a result, the pressure of the plasma generation space S can be measured using a pressure gauge outside the chamber 10.

[0123] Furthermore, according to Modifications 6 and 7, O-rings (85b, 85c) are provided on the side surfaces of the recess 87 or on the outer sides of the central end portions of the relay members. When the central end portions of the relay members are inserted into the recess 87, the O-rings seal the space between the processing chamber and the exhaust chamber. As a result, the pressure of the plasma generation space S can be measured using a pressure gauge outside the chamber 10.

[0124] According to Modifications 8 to 12, the hole is a through hole 89 into which the center-side end of the relay member can be inserted. As a result, the pressure of the plasma generation space S can be measured by a pressure gauge outside the chamber 10 .

[0125] According to Modifications 8 to 12, the end surface (surface 91d) of the central end of the relay member is bag-shaped and has one or more holes 91e in the end surface. As a result, the electrical conductivity can be controlled on the relay member side.

[0126] According to Modifications 8 to 12, the central end of the relay member includes a stopper 91f that contacts the wall surface when the end is inserted into the through hole 89. As a result, the central end of the relay member can be prevented from protruding into the plasma generation space S.

[0127] Furthermore, according to Modifications 8 and 9, O-rings (85d, 85e) are provided on the wall surface with which the stopper 91f contacts, or on the surface 91g of the stopper 91f that contacts the wall surface. When the end portion of the relay member on the central direction side is inserted into the through-hole 89, the O-ring seals the space between the processing chamber and the exhaust chamber. As a result, the pressure of the plasma generation space S can be measured using a pressure gauge outside the chamber 10.

[0128] Furthermore, according to Modifications 10 and 11, O-rings (85f, 85g) are provided on the side surface 89a of the through-hole 89 or on the outer side of the central end of the relay member (end side surface 91h). When the central end of the relay member is inserted into the through-hole 89, the O-ring seals the space between the processing chamber and the exhaust chamber. As a result, the pressure of the plasma generation space S can be measured using a pressure gauge outside the chamber 10.

[0129] Furthermore, according to Modifications 12 and 13, a gap is provided at the portion where the end portion of the relay member on the center direction side is connected to the shield member. As a result, an O-ring can be omitted.

[0130] Furthermore, according to Modifications 12 and 13, the electrical conductivity of the gap is lower than the electrical conductivity of hole 86 of the shield member or lower than the electrical conductivity of hole 91e in the end surface of the relay member on the central side. As a result, the effect on measurement by the measuring instrument can be minimized.

[0131] Furthermore, according to this embodiment and modifications 1 to 3, the relay member can be driven horizontally while being shielded from the outside by bellows (97, 97c, 97d) or shaft seals (97a, 97b, 98). As a result, pressure can be accurately measured even at driven locations such as the shield member.

[0132] Furthermore, according to the present embodiment and its variations, the measuring instrument measures the state inside the processing chamber. As a result, the state inside the processing chamber can be accurately measured.

[0133] Furthermore, according to this embodiment and its variations, the measuring instrument is one or more of a pressure gauge and a mass spectrometer for measuring the gas present in the processing chamber. As a result, one or more of the pressure and the type of gas can be accurately measured.

[0134] The embodiments disclosed herein are to be considered in all respects as illustrative and non-restrictive, and the embodiments described above may be omitted, replaced, or modified in various forms without departing from the scope of the appended claims and the gist thereof.

[0135] In addition, in the above embodiment, the plasma processing apparatus 1 is used as an example of a substrate processing apparatus for description, but the present invention is not limited thereto. For example, the present invention can also be applied to the case of measuring the pressure of various devices that perform vacuuming, such as conveying devices, etc., which have a driving portion.

[0136] In addition, in the above-mentioned embodiment, a pressure gauge is used to measure the pressure as a value representing the state in the processing chamber, but the present invention is not limited to this. For example, the type of gas present in the processing chamber can be used as another example of a value representing the state in the processing chamber, and a mass spectrometer or the like that measures the type of gas can also be used. As an example of a mass spectrometer, a quadrupole mass spectrometer (QMS) can be cited. In other words, the present invention can also be applied to the case of using a measuring instrument that can measure a value representing the state in the processing chamber.

Claims

1. A substrate processing device, wherein: The substrate processing device comprises: a chamber having a processing chamber for processing a substrate using introduced gas and an exhaust chamber for exhausting the gas in the processing chamber; a shielding member provided at least partially near a side wall of the chamber, the shielding member separating the processing chamber from the exhaust chamber, and having a hole connecting the processing chamber and the exhaust chamber on a portion of a wall surface of the shielding member parallel to the side wall of the chamber, the shielding member being movable in an up-down direction; as well as A hollow relay member is connected to a pipe connected to a measuring instrument outside the chamber. The relay member can be driven in the horizontal direction. When the shielding member reaches the upper end, the relay member is driven toward the center of the chamber, so that the end of the relay member on the center side is connected to the shielding member, and the processing chamber and the pipe are connected through the hole.

2. The substrate processing apparatus according to claim 1, wherein: One or more holes are provided on the wall surface with which the relay member contacts, within a range smaller than the inner diameter of the relay member.

3. The substrate processing apparatus according to claim 1 or 2, wherein: The shield member is provided with a recessed portion on the outer side of the wall surface with which the relay member contacts, into which the end portion of the relay member on the center direction side can be inserted.

4. The substrate processing apparatus according to claim 1 or 2, wherein: An O-ring is provided on the wall surface contacted by the relay member or on the end portion on the center direction side of the relay member. When the end portion on the center direction side of the relay member contacts the wall surface, the O-ring is used to seal the processing chamber and the exhaust chamber.

5. The substrate processing apparatus according to claim 3, wherein: An O-ring is provided on the side of the recess or on the outer side of the end portion on the center direction side of the relay member. When the end portion on the center direction side of the relay member is inserted into the recess, the O-ring is used to seal the processing chamber and the exhaust chamber. The substrate processing apparatus according to claim 1 , wherein: The hole is a through hole into which the end portion of the relay member on the center direction side can be inserted.

7. The substrate processing apparatus according to claim 6, wherein: The end surface of the end portion of the relay member on the center direction side is bag-shaped and has one or more holes on the end surface.

8. The substrate processing apparatus according to claim 7, wherein: The end portion of the relay member on the center direction side includes a stopper that contacts the wall surface when the end portion is inserted into the through hole.

9. The substrate processing apparatus according to claim 8, wherein: The wall surface with which the stopper contacts, or the surface of the stopper in contact with the wall surface has an O-ring, and when the end portion on the center direction side of the relay member is inserted into the through hole, the O-ring is used to seal the processing chamber and the exhaust chamber.

10. The substrate processing apparatus according to claim 8, wherein: An O-ring is provided on the side of the through hole or on the outer side of the end portion on the center direction side of the relay member. When the end portion on the center direction side of the relay member is inserted into the through hole, the O-ring is used to seal the processing chamber and the exhaust chamber.

11. The substrate processing apparatus according to claim 1 or 2, wherein: A gap is formed at a portion where the end portion of the relay member on the center direction side is connected to the shield member.

12. The substrate processing apparatus according to claim 7 or 8, wherein: A gap is formed at a portion where the end portion of the relay member on the center direction side is connected to the shield member.

13. The substrate processing apparatus according to claim 12, wherein: The electrical conductivity of the gap is a value smaller than the electrical conductivity of the hole of the shield member, or a value smaller than the electrical conductivity of the hole of the end surface of the end portion on the center direction side of the relay member.

14. The substrate processing apparatus according to any one of claims 1, 2, 5 to 10, and 13, wherein: The relay member is drivable in the horizontal direction in a state where the interior thereof is isolated from the outside by a bellows or a shaft seal.

15. The substrate processing apparatus according to any one of claims 1, 2, 5 to 10, and 13, wherein: The metrology instrument measures a state inside the process chamber.

16. The substrate processing apparatus according to any one of claims 1, 2, 5 to 10, and 13, wherein: The metering instrument is one or more of a pressure gauge and a mass spectrometer that measures the gas present in the process chamber.

17. A method for driving a relay member, wherein the relay member is a relay member in a substrate processing device, wherein: The substrate processing device comprises: a chamber having a processing chamber for processing a substrate using introduced gas and an exhaust chamber for exhausting the gas in the processing chamber; a shielding member provided at least partially near a side wall of the chamber, the shielding member separating the processing chamber from the exhaust chamber, and having a hole connecting the processing chamber and the exhaust chamber on a portion of a wall surface of the shielding member parallel to the side wall of the chamber, the shielding member being movable in an up-down direction; and A hollow relay member is connected to a pipe connected to a measuring instrument outside the chamber. The relay member is drivable in the horizontal direction. When the shielding member reaches the upper end, the relay member is driven toward the center of the chamber, so that the end of the relay member on the center side is connected to the shielding member, and the processing chamber and the pipe are connected via the hole. The driving method of the relay member includes the following steps: In a state where the end portion of the relay member on the center direction side is connected to the shield member, the relay member is driven toward the outside of the chamber to separate the relay member from the shield member; driving the shielding member from the upper end to the lower end; feeding a substrate into the chamber or taking the substrate out of the chamber; driving the shielding member from the lower end toward the upper end; and The relay member is driven toward the center to connect the relay member to the shield member.

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