Manufacturing apparatus and manufacturing method of display device

Abstract

A manufacturing apparatus and a manufacturing method of a display device are provided. In order to improve manufacturing quality and yield of the display device, the manufacturing apparatus of the display device includes: a stage supporting a substrate; a moving part moving the stage along a first direction; a laser beam source emitting a raw laser beam; an optical unit disposed on a traveling path of the raw laser beam and processing the raw laser beam into a line laser beam extending in a second direction intersecting the first direction; a beam blocking unit capable of moving along the second direction and capable of blocking a part of the line laser beam; and a beam elimination unit eliminating the part of the line laser beam blocked by the beam blocking unit.

Description

TECHNICAL FIELD

[0001] The present application relates to a manufacturing apparatus and a manufacturing method of a display device. BACKGROUND

[0002] Generally, in the case of a display device such as an organic light emitting display device, a process of forming a plurality of thin film transistors on a substrate is required. The thin film transistor has a semiconductor layer, a source electrode, a drain electrode, a gate electrode, and the like, and the semiconductor layer can include a polycrystalline silicon layer crystallized from an amorphous silicon layer.

[0003] In the manufacturing process of such a display device, in order to form a polycrystalline silicon layer by crystallizing an amorphous silicon layer, a laser annealing method of mainly using a laser beam to irradiate the amorphous silicon layer to transform it into a polycrystalline silicon layer is used. At this time, in order to transform a large-area amorphous silicon layer into a polycrystalline silicon layer, a line laser beam extending in one direction is used as a laser beam to irradiate the amorphous silicon layer, and the line laser beam is irradiated a plurality of times while moving a substrate on which the amorphous silicon layer is formed.

[0004] However, in the case of manufacturing a display device using a polycrystalline silicon layer thus formed, a problem of a stripe stain occurs on an image presented by the display device. SUMMARY

[0005] The present application is to solve a plurality of problems including the above-described problem, and aims to provide a manufacturing apparatus of a display device capable of improving manufacturing quality and yield of the display device. However, this problem is an example, and does not limit the scope of the present application.

[0006] According to an aspect of the present application, there is provided a manufacturing apparatus of a display device, including: a stage supporting a substrate; a moving portion moving the stage in a first direction; a laser beam source emitting a raw laser beam; an optical unit disposed on a traveling path of the raw laser beam and processing the raw laser beam into a line laser beam extending in a second direction intersecting the first direction; a beam blocking unit capable of moving in the second direction and capable of blocking a part of the line laser beam; and a beam elimination unit eliminating the part of the line laser beam blocked by the beam blocking unit.

[0007] According to the present embodiment, the beam blocking unit can include a reflection surface reflecting a part of the line laser beam, and the beam blocking unit can include a first beam blocking unit and a second beam blocking unit disposed apart from and parallel to each other.

[0008] According to the present embodiment, the beam blocking unit can be configured of a plurality of stages, and can be capable of extending and contracting in the second direction.

[0009] According to the present embodiment, it can be that, as the light beam blocking unit moves linearly in the second direction, a blocking region of the linear laser beam is determined.

[0010] According to the present embodiment, it can be that the light beam elimination unit includes an opening portion that receives a portion of the linear laser beam reflected by the reflection surface of the light beam blocking unit, and an internal space defined by an inner surface that reflects the portion of the linear laser beam multiple times.

[0011] According to the present embodiment, it can be that the inner surface includes a concave-convex.

[0012] According to the present embodiment, it can be that the light beam elimination unit includes a first elimination plate and a second elimination plate that correspond to each other, the first elimination plate and the second elimination plate form an acute angle such that a space between the first elimination plate and the second elimination plate decreases more toward one direction. According to the present embodiment, it can be that surfaces of the first elimination plate and the second elimination plate that face each other include a concave-convex.

[0013] According to the present embodiment, it can be that the light beam elimination unit includes a first elimination plate and a second elimination plate that correspond to each other, the first elimination plate and the second elimination plate form an acute angle such that a space between the first elimination plate and the second elimination plate decreases more toward one direction. According to the present embodiment, it can be that surfaces of the first elimination plate and the second elimination plate that face each other include a concave-convex.

[0014] According to other aspects of the present invention, there is provided a method of manufacturing a display device, including: a step of forming an amorphous silicon layer on a substrate; a step of rotating the substrate on which the amorphous silicon layer is formed at a first angle on a virtual plane parallel to one face of the substrate; a step of irradiating a linear laser beam extending along a second direction intersecting a first direction on the amorphous silicon layer during movement of the substrate along the first direction; a step of reflecting a portion of the linear laser beam so that the portion of the linear laser beam cannot reach the substrate; and a step of eliminating the portion of the linear laser beam that is reflected, the step of eliminating the portion of the linear laser beam that is reflected including: a step of causing the portion of the linear laser beam to be incident on an internal space of a light beam elimination unit through an opening portion of the light beam elimination unit; a step of reflecting the portion of the linear laser beam multiple times on an inner surface defining the internal space of the light beam elimination unit; and a step of absorbing the portion of the linear laser beam by the light beam elimination unit, the substrate being moved in the first direction so as to increase or decrease an area of a reflection region in which the portion of the linear laser beam is reflected.

[0015] Other aspects, features, and advantages will become apparent from the following detailed description, claims, and drawings.

[0016] Such generally and specifically can be implemented using a system, a method, a computer program, or any combination of a system, a method, a computer program.

[0017] (Inventive Effects)

[0018] According to an embodiment of the present application configured as described above, a phenomenon of generating a stripe stain can be minimized in an image of a display device, and thus display quality of the display device can be improved. Further, a manufacturing apparatus of a display device capable of improving manufacturing quality and yield of the display device can be implemented. Of course, the scope of the present application is not limited by such effects. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 is a plan view schematically illustrating a display device manufactured by a manufacturing apparatus of a display device according to an embodiment of the present application.

[0020] Figure 2 is a cross-sectional view schematically illustrating a portion of the display device of Figure 1 .

[0021] Figure 3 is a side view schematically illustrating a portion of a manufacturing apparatus of a display device according to an embodiment of the present application.

[0022] Figure 4 is a perspective view schematically illustrating a portion of a manufacturing apparatus of a display device according to an embodiment of the present application.

[0023] Figure 5 is a perspective view schematically illustrating a portion of a manufacturing apparatus of a display device according to another embodiment of the present application.

[0024] Figure 6 is a perspective view schematically illustrating a portion of a manufacturing apparatus of a display device according to an embodiment of the present application.

[0025] Figure 7a and Figure 7b is a cross-sectional view schematically illustrating a portion of a manufacturing apparatus of a display device according to an embodiment of the present application.

[0026] Figure 8 is a perspective view schematically illustrating a portion of a manufacturing apparatus of a display device according to another embodiment of the present application.

[0027] Figure 9 and Figure 10 is a plan view schematically illustrating a portion of a process of manufacturing a display device using a manufacturing apparatus of a display device according to an embodiment of the present application.

[0028] Figures 11a to 11e is a plan view schematically illustrating a portion of a process of manufacturing a display device using a manufacturing apparatus of a display device according to an embodiment of the present application.

[0029] (Symbol explanation)

[0030] 1: display device; 10: substrate; 100: manufacturing apparatus of display device; 110: work table; 120: moving section; 130: optical unit; 140: light beam blocking unit; 150: light beam eliminating unit; 151: first eliminating plate; 152: second eliminating plate; 160: cooling unit; LB: original laser beam; LLB: linear laser beam; M: mirror; SLT: slit section. DETAILED DESCRIPTION

[0031] The present application can have various modifications and various embodiments, and a specific embodiment is illustrated in the accompanying drawings and described in detail. In the description of the present application, the same or corresponding components are designated by the same reference numerals, and repetitive description thereof will be omitted. Figure 1 The effects, features, and methods of achieving the effects and features of the present application will become apparent from the following embodiments described in detail below. However, the present application is not limited to the following disclosed embodiments, and can be implemented in various ways.

[0032] Hereinafter, each embodiment of the present application will be described in detail with reference to the accompanying drawings, and when the description is made with reference to the accompanying drawings, the same or corresponding components are designated by the same reference numerals, and repetitive description thereof will be omitted.

[0033] In the following embodiments, the terms of first, second, and the like are not limiting terms, and are used to distinguish one component from other components.

[0034] In the following embodiments, the singular expression includes the plural expression unless the context clearly indicates the contrary.

[0035] In the following embodiments, the terms of including or having should be understood as referring to the existence of the features or components described in the specification, and do not exclude the possibility of adding one or more other features or components in advance.

[0036] In the following embodiments, when a part such as a film, a region, a component, and the like is positioned on or above another part, not only a case in which it is directly positioned on another part, but also a case in which there is another film, region, component, and the like therebetween is included.

[0037] In the drawings, the size of each component can be exaggerated or reduced for the sake of convenience in explanation. For example, the size and thickness of each component illustrated are shown for the sake of convenience in explanation, and the present application is not necessarily limited to the illustrated case.

[0038] In a case where a certain embodiment can be implemented in different ways, a specific procedure order can also be performed differently from the order described. For example, two procedures described in succession can be substantially simultaneously performed, or can be performed in an order opposite to the described order.

[0039] In this specification, "A and / or B" means A, or B, or both A and B. Furthermore, in this specification, "at least one of A and B" means A, or B, or both A and B.

[0040] In the following embodiments, when described that a film, a region, a constituent element, or the like is connected, not only a case where the film, the region, the constituent element, or the like is directly connected, and / or, but also a case where the film, the region, the constituent element, or the like is indirectly connected with other film, region, constituent element, or the like interposed therebetween is included. For example, in this specification, when described that a film, a region, a constituent element, or the like is electrically connected, a case where the film, the region, the constituent element, or the like is directly electrically connected, and / or a case where the film, the region, the constituent element, or the like is indirectly electrically connected with other film, region, constituent element, or the like interposed therebetween is indicated.

[0041] The x-axis, the y-axis, and the z-axis are not limited to three axes on a rectangular coordinate system, and can be interpreted in a broader sense including the same. For example, the x-axis, the y-axis, and the z-axis can be orthogonal to each other, or can refer to different directions from each other without being orthogonal to each other.

[0042] Figure 1 is a plan view schematically showing a display device manufactured by a manufacturing device of a display device according to an embodiment of the present application.

[0043] Referring to Figure 1 , the display device 1 includes a display region DA in which an image is presented and a non-display region NDA in which the image is not presented. The display device 1 can provide the image using light emitted from a plurality of pixels PX arranged in the display region DA. For example, the plurality of pixels PX can be arranged in rows and columns, and can be two-dimensionally arranged. Each of the plurality of pixels PX can emit light of red, green, blue, or white, respectively.

[0044] The display device 1 is a device that displays an image, and can be a portable mobile device such as a game machine, a multimedia device, or a subnotebook PC. Hereinafter, the display device 1 manufactured by the manufacturing device of the display device according to an embodiment of the present application will be described taking an organic light emitting display device as an example, but the present application is not limited to the organic light emitting display device, and for example, a display device including a thin film transistor having a polysilicon layer as a semiconductor layer, such as a liquid crystal display device, belongs to the range to which the present application is applicable.

[0045] Figure 2 is a cross-sectional view schematically showing a part of the display device of Figure 1 , and can correspond to a cross section of the display device taken along the line II-II' of Figure 1

[0046] Referring to Figure 2 ​The substrate 10 can include glass or a high molecular resin such as polyethersulfone, polyarylate, polyetherimide, polyethylenenaphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, cellulose acetate propionate, or the like.

[0047] A pixel circuit layer PCL can be formed on the substrate 10. The pixel circuit layer PCL can include a thin film transistor TFT and a buffer layer 11, a first gate insulating layer 13a, a second gate insulating layer 13b, an interlayer insulating layer 15, and a planarization insulating layer 17 disposed below and / or above constituent elements of the thin film transistor TFT.

[0048] The buffer layer 11 can include an inorganic insulating material such as silicon nitride, silicon oxynitride, and silicon oxide, and can be a single layer or a plurality of layers including the above-described inorganic insulating material.

[0049] The thin film transistor TFT can include a semiconductor layer 12, and the semiconductor layer 12 can include polycrystalline silicon. The semiconductor layer 12 can include a channel region 12c and a drain region 12a and a source region 12b disposed on both sides of the channel region 12c, respectively. A gate electrode 14 can overlap the channel region 12c. The gate electrode 14 can include a low-resistance metal material. The gate electrode 14 can include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like, and can be formed of a plurality of layers or a single layer including the above-described material.

[0050] To form such a thin film transistor TFT, an amorphous silicon layer can be formed on the substrate 10, and annealing can be performed using a manufacturing apparatus of a display device according to an embodiment of the present application described below to crystallize the amorphous silicon layer on the substrate 10 into a polycrystalline silicon layer. Then, the polycrystalline silicon layer can be patterned to form the drain region 12a, the source region 12b, the channel region 12c, the gate electrode 14, and the like, and thus the thin film transistor TFT can be formed.

[0051] The first gate insulating layer 13a between the semiconductor layer 12 and the gate electrode 14 can include silicon oxide (SiO2), silicon nitride (SiN Xinorganic insulators such as silicon oxide (SiO2), silicon nitride (SiN

[0052] The second gate insulating layer 13b can be provided to cover the gate electrode 14. The second gate insulating layer 13b can include, similarly to the first gate insulating layer 13a, an inorganic insulator such as silicon oxide (SiO2), silicon nitride (SiN X ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO2).

[0053] An upper electrode Cst2 of the storage capacitor Cst can be disposed at an upper portion of the second gate insulating layer 13b. The upper electrode Cst2 can overlap the gate electrode 14 therebelow. At this time, the gate electrode 14 and the upper electrode Cst2 overlapping each other with the second gate insulating layer 13b interposed therebetween can form the storage capacitor Cst. That is, the gate electrode 14 can function as a lower electrode Cst1 of the storage capacitor Cst.

[0054] As described above, the storage capacitor Cst and the thin film transistor TFT can be formed to overlap each other. In some embodiments, the storage capacitor Cst can also be formed not to overlap the thin film transistor TFT.

[0055] The upper electrode Cst2 can include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and / or copper (Cu), and can be a single layer or multiple layers of the above-described substances.

[0056] The interlayer insulating layer 15 can cover the upper electrode Cst2. The interlayer insulating layer 15 can include silicon oxide (SiO2), silicon nitride (SiN X ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO2). The interlayer insulating layer 15 can be a single layer or multiple layers including the above-described inorganic insulator.

[0057] The drain electrode 16a and the source electrode 16b can be provided on the interlayer insulating layer 15, respectively. The drain electrode 16a and the source electrode 16b can be connected to the drain region 12a and the source region 12b, respectively, through contact holes of the respective insulating layers under them. The drain electrode 16a and the source electrode 16b can include a material excellent in conductivity. The drain electrode 16a and the source electrode 16b can include an electrically conductive substance including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like, and can be formed of a plurality of layers or a single layer including the above-described material. As an embodiment, the drain electrode 16a and the source electrode 16b can have a multilayer structure of Ti / Al / Ti.

[0058] The planarization insulating layer 17 can include an organic insulating layer. The planarization insulating layer 17 can include a general-purpose polymer such as PMMA (Polymethylmethacrylate) or PS (Polystyrene), or can include an organic insulating substance such as a phenol group-containing polymer derivative, an acrylic polymer, a polyimide polymer, an arylether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, a vinyl alcohol polymer, and a mixture thereof.

[0059] The display element layer DEL is provided on the pixel circuit layer PCL having the above-described structure. The display element layer DEL includes an organic light emitting diode OLED, and a pixel electrode 21 of the organic light emitting diode OLED can be electrically connected to the thin film transistor TFT through a contact hole of the planarization insulating layer 17.

[0060] The organic light emitting diode OLED can emit, for example, red, green, or blue light, or can emit red, green, blue, or white light. The organic light emitting diode OLED can emit light through a light emitting region, and the light emitting region can be defined as a pixel PX.

[0061] The pixel electrode 21 can include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). As other examples, the pixel electrode 21 can include a reflective film containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof. As other examples, the pixel electrode 21 can also include a film formed of ITO, IZO, ZnO, or In2O3 above / below the reflective film described above.

[0062] The pixel electrode 21 is provided with a pixel defining film 19 having an opening 19OP exposing a central portion of the pixel electrode 21. The pixel defining film 19 can include an organic insulator and / or an inorganic insulator. The opening 19OP can define a light emitting region of light emitted from the organic light emitting diode OLED. For example, the width of the opening 19OP can correspond to the width of the light emitting region. As described above, the light emitting region is defined as a pixel PX, and the pixel PX can depend on the width of the opening 19OP.

[0063] The light emitting layer 22 can be provided in the opening 19OP of the pixel defining film 19. The light emitting layer 22 can include a high molecular or low molecular organic substance that emits light of a predetermined color. Such a light emitting layer 22 can be formed by ejecting droplets using a manufacturing apparatus of a display device according to an embodiment of the present application.

[0064] Although not illustrated, a first functional layer and a second functional layer can be provided above and below the light emitting layer 22, respectively. The first functional layer can include, for example, a hole transport layer (HTL), or can include a hole transport layer and a hole injection layer (HIL). The second functional layer is a constituent element provided on the light emitting layer 22, and is an optional constituent. The second functional layer can include an electron transport layer (ETL) and / or an electron injection layer (EIL). The first functional layer and / or the second functional layer, like the common electrode 23 described later, can be a common layer formed to entirely cover the substrate 10.

[0065] The common electrode 23 can be formed of a conductive substance having a small work function. For example, the common electrode 23 can include a (semi-) transparent layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or an alloy thereof. Alternatively, the common electrode 23 can further include a layer such as ITO, IZO, ZnO, or In2O3 on the (semi-) transparent layer including the above-described substance.

[0066] In one embodiment, the thin film encapsulation layer TFE includes at least one inorganic encapsulation layer and at least one organic encapsulation layer, as one embodiment, Figure 2 A case where the thin film encapsulation layer TFE includes a first inorganic encapsulation layer 31, an organic encapsulation layer 32, and a second inorganic encapsulation layer 33, which are sequentially stacked, is shown.

[0067] The first inorganic encapsulation layer 31 and the second inorganic encapsulation layer 33 can include one or more inorganic substances among aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, silicon oxynitride. The organic encapsulation layer 32 can include a polymer-based substance. As a polymer-based material, an acrylic resin, an epoxy resin, polyimide, polyethylene, or the like can be included. As one embodiment, the organic encapsulation layer 32 can include an acrylate resin.

[0068] A touch electrode layer (not shown) including a touch electrode can be disposed on the thin film encapsulation layer TFE, and an optical functional layer (not shown) can be disposed on the touch electrode layer.

[0069] Figure 3 is a side view schematically showing a part of a manufacturing apparatus of a display device to which one embodiment of the present application relates.

[0070] Referring to Figure 3 The manufacturing apparatus 100 of the display device can include a stage 110, a moving portion 120, a chamber CB, a laser beam source LS, an optical unit 130, a light beam blocking unit 140, and a light beam elimination unit 150. In addition, the manufacturing apparatus 100 of the display device can include a slit portion SLT and a mirror M as necessary.

[0071] The stage 110 can support the substrate 10. At this time, the stage 110 can support the substrate 10 in various ways. For example, the stage 110 can include an electrostatic chuck or an adhesive chuck. As another embodiment, the stage 110 can include a support, a clamp, or the like that supports a part of the substrate 10. Of course, the present application is not limited thereto. The substrate 10 mounted on the stage 110 can be a substrate in a state where an amorphous silicon layer is formed on one surface thereof.

[0072] The moving section 120 can move the stage 110 on which the substrate 10 is mounted, for example, can cause the stage 110 to linearly move and / or rotationally move. Specifically, the moving section 120 can move the stage 110 in a first direction, for example, in the ±y direction. Further, the moving section 120 can rotate the stage 110 on the xy plane. As a section that can cause the stage 110 to linearly move, the moving section 120 can include, for example, a linear motor, a pneumatic cylinder, or the like, and as a section that can cause the stage 110 to rotationally move, the moving section 120 can include, for example, a motor, a rotary cylinder, or the like.

[0073] Inside the cavity CB, a laser beam source LS, an optical unit 130, a beam blocking unit 140, and a beam elimination unit 150 can be arranged.

[0074] The laser beam source LS can emit an original laser beam LB, for example, can emit an excimer laser beam. Such a laser beam source LS can include a resonator. Generally, light that is spontaneously or inducedly emitted from a medium has no particular directionality, and thus scatters in all directions. Therefore, in order to generate the original laser beam LB, it is necessary to return the scattered light to the medium to stimulate atoms or molecules that are still in an excited state so as to continue to generate induced emission. For this purpose, mirrors can be arranged on both sides to cause the light to continue to return, and such a device is called a laser resonator. It can be understood that the original laser beam LB is light in a resonant state that is partially passed through a mirror on one side that transmits light to leak out little by little.

[0075] The optical unit 130 can process the original laser beam LB into a linear laser beam LLB in order to irradiate the original laser beam LB on the substrate 10 in a linear form rather than a point form. At this time, the linear laser beam LLB can extend in a second direction, for example, the ±x direction, which intersects the first direction (the ±y direction). The optical unit 130 can include a plurality of optical lenses, for example, can include cylindrical lenses. The plurality of optical lenses can be arranged in a superposed manner, and the original laser beam LB emitted from the laser beam source LS can pass through the plurality of optical lenses to form the linear laser beam LLB in a linear form at the same time.

[0076] The beam blocking unit 140 can be configured to block a part of the linear laser beam LLB and to pass the remaining part. A part of the linear laser beam LLB can be reflected by the beam blocking unit 140, and thus cannot reach the substrate 10 but is blocked. The part of the linear laser beam LLB that is reflected can be reflected to a path in a direction different from the traveling direction of the linear laser beam LLB that travels toward the beam blocking unit 140. In the present embodiment, the beam blocking unit 140 can be configured to block a part of the linear laser beam LLB and to pass the remaining part. Figure 3 A part of the linear laser beam LLB that is reflected by the beam blocking unit 140 is shown by a dotted arrow.

[0077] The beam blocking unit 140 can be disposed at a rear stage of the optical unit 130 to block the linear laser beam LLB. Since the linear laser beam LLB is irradiated onto the substrate 10 instead of the original laser beam LB, it is more advantageous in terms of precision to control the blocking area of the linear laser beam LLB by disposing the beam blocking unit 140 at the rear stage of the optical unit 130. Preferably, in terms of precision, it can be advantageous to control the blocking area when the linear laser beam LLB is in a state in which the extension length is the longest and the width is the smallest. The position of the beam blocking unit 140 can be determined considering this case.

[0078] The beam elimination unit 150 can eliminate a portion of the linear laser beam LLB blocked by the beam blocking unit 140. That is, a portion of the linear laser beam LLB reflected by the beam blocking unit 140 without reaching the substrate 10 can be eliminated. To eliminate such a portion of the linear laser beam LLB, the beam elimination unit 150 can be disposed at a predetermined position so that the portion of the linear laser beam LLB reflected by the beam blocking unit 140 reaches the beam elimination unit 150.

[0079] As a comparative example, in the case where the beam elimination unit 150 is not provided, the portion of the linear laser beam LLB reflected by the beam blocking unit 140 can be reflected multiple times inside the cavity CB while increasing the temperature inside the cavity CB. As the temperature inside the cavity CB increases, the generation of an oxide film can be promoted on the surface of the optical lens of the optical unit 130. This can reduce the transmittance of the optical lens, and can reduce the function and efficiency of the optical unit 130. In addition, when the portion of the linear laser beam LLB is reflected multiple times inside the cavity CB, it can unintentionally have a direct or indirect effect on other constituent elements of the manufacturing apparatus 100 of the display device.

[0080] However, according to an embodiment of the present application, by providing the beam elimination unit 150 that eliminates the portion of the linear laser beam LLB reflected, the adverse effects of the portion of the linear laser beam LLB on the constituent elements of the manufacturing apparatus 100 of the display device can be removed. Thereby, the manufacturing quality and yield of the display device 1 (refer to FIG. 1) manufactured using the manufacturing apparatus 100 of the display device can be improved. Figure 1 ) of the display device can be improved.

[0081] The slit portion SLT can have a slit through which the linear laser beam LLB passes. The slit can extend in the same direction as the direction of extension of the linear laser beam LLB, and can extend at least longer than the extension length of the linear laser beam LLB. The slit portion SLT can be used to confirm the symmetry of the linear laser beam LLB when aligning the optical lenses of the optical unit 130. As an example, the beam blocking unit 140 can be disposed between the optical unit 130 and the slit portion SLT. For example, the beam blocking unit 140 can be disposed in front of the slit portion SLT, and can be engaged with the slit portion SLT. The linear laser beam LLB processed by the optical unit 130 is in a state in which the extension length is the longest and the width is the smallest when passing through the slit portion SLT, and thus the beam blocking unit 140 can be disposed around the slit portion SLT.

[0082] The mirror M can change the traveling direction of the linear laser beam LLB so as to irradiate the linear laser beam LLB onto the substrate 10. As an example, the mirror M can include a first mirror M1 and a second mirror M2, and the traveling direction of the linear laser beam LLB can be sequentially changed by the first mirror M1 and the second mirror M2. Of course, the present application is not limited thereto, and the manufacturing apparatus 100 of the display device can have one mirror or three mirrors. Hereinafter, for convenience of explanation, a case in which the mirror M includes the first mirror M1 and the second mirror M2 will be described.

[0083] The linear laser beam LLB can be irradiated onto the substrate 10 through the opening portion of the cavity CB after adjusting the path by the first mirror M1 and the second mirror M2. As an example, the beam blocking unit 140 can be disposed between the optical unit 130 and the first mirror M1.

[0084] Figure 4 FIG. 1 is a perspective view schematically illustrating a part of a manufacturing apparatus of a display device according to an embodiment of the present application, and FIG. 2 is a perspective view schematically illustrating a part of the manufacturing apparatus of the display device according to an embodiment of the present application, and illustrates a beam blocking unit as a center.

[0085] Referring to Figure 4 The beam blocking unit 140 can include a first beam blocking unit 140-1 and a second beam blocking unit 140-2. The first beam blocking unit 140-1 can include a first body portion 141-1 and a first transfer portion 142-1, and the second beam blocking unit 140-2 can include a second body portion 141-2 and a second transfer portion 142-2.

[0086] The linear laser beam LLB can travel, for example, in the y direction. At this time, the first body portion 141-1 of the first beam blocking unit 140-1 can extend in the x direction crossing the y direction. As an example, the first length L1 by which the first body portion 141-1 extends in the x direction can be equal to or greater than the extension length Lx by which the linear laser beam LLB extends in the x direction.

[0087] The first main body 141-1 of the first beam blocking unit 140-1 can be connected to the first transfer unit 142-1 at one side thereof, and can be linearly transferred by the first transfer unit 142-1. The first transfer unit 142-1 can extend along the extension direction of the linear laser beam LLB, for example, the x direction. Accordingly, the first main body 141-1 can perform linear motion along the ±x direction. The first transfer unit 142-1 can include, for example, a linear motor, an air cylinder, or the like.

[0088] The first main body 141-1 of the first beam blocking unit 140-1 can include a first reflection surface 143-1. The first reflection surface 143-1 can reflect a portion of the linear laser beam LLB to a path different from the travel path of the linear laser beam LLB, and for this purpose can have a certain angle α with respect to the travel path of the linear laser beam LLB.

[0089] The second beam blocking unit 140-2 has the same structure as the first beam blocking unit 140-1, and thus a description of the second main body 141-2, the second transfer unit 142-2, and the second reflection surface 143-2 of the second beam blocking unit 140-2 is omitted.

[0090] The first beam blocking unit 140-1 and the second beam blocking unit 140-2 are configured to be distanced from and parallel to each other. Specifically, a first axis a1 placed along the extension direction of the first transfer unit 142-1 of the first beam blocking unit 140-1 and a second axis a2 placed along the extension direction of the second transfer unit 142-2 of the second beam blocking unit 140-2 can be parallel to and distanced from each other by a certain distance d. The distance d can be sufficiently large so that the first beam blocking unit 140-1 and the second beam blocking unit 140-2 do not collide due to interference with each other.

[0091] By the first light beam blocking unit 140-1 and the second light beam blocking unit 140-2, at least a part of the linear laser beam LLB cannot reach the substrate 10 but is blocked. Specifically, the linear laser beam LLB travels along the y direction, and a part of the linear laser beam LLB encounters the first main body portion 141-1 of the first light beam blocking unit 140-1 or the second main body portion 141-2 of the second light beam blocking unit 140-2, and thus cannot travel further along the y direction. In contrast, the remaining part of the linear laser beam LLB can pass between the first main body portion 141-1 and the second main body portion 141-2, and finally can reach the substrate 10. That is, the region in which the linear laser beam LLB overlaps with the first main body portion 141-1 or the second main body portion 141-2 can be defined as a blocked region. As the first main body portion 141-1 of the first light beam blocking unit 140-1 and the second main body portion 141-2 of the second light beam blocking unit 140-2 linearly move along the ±x direction, the blocked region of the linear laser beam LLB can be determined. As described above, the first length L1 of the first main body portion 141-1 and the second length L2 of the second main body portion 141-2 are equal to or greater than the extension length Lx of the linear laser beam LLB, and thus all of the linear laser beam LLB can be blocked only by using one of the first light beam blocking unit 140-1 and the second light beam blocking unit 140-2.

[0092] Figure 5 is a perspective view schematically showing a part of a manufacturing apparatus of a display device according to another embodiment of the present application, which is centered on a light beam blocking unit.

[0093] Referring to Figure 5 The light beam blocking unit 140 is composed of multiple stages, and for example, can be extended along the ±x direction.

[0094] Specifically, the light beam blocking unit 140 can include a main body portion 141, and the main body portion 141 can include a first sub-main body portion 141a, a second sub-main body portion 141b, and a third sub-main body portion 141c. The second sub-main body portion 141b can slide with respect to the first sub-main body portion 141a along the ±x direction. If the second sub-main body portion 141b is completely slid in the -x direction with respect to the first sub-main body portion 141a, the second sub-main body portion 141b can overlap the first sub-main body portion 141a as a whole. For this, the first sub-main body portion 141a has an internal space in which the second sub-main body portion 141b can be completely accommodated.

[0095] Similarly, the third sub-body portion 141c can slide with respect to the second sub-body portion 141b in the ±x direction. If the third sub-body portion 141c is completely slid in the -x direction with respect to the second sub-body portion 141b, the third sub-body portion 141c can be entirely overlapped with the second sub-body portion 141b. For this reason, the second sub-body portion 141b has an internal space in which the third sub-body portion 141c can be completely accommodated. A linear motor, a pneumatic cylinder, or the like can be provided so that the first sub-body portion 141a to the third sub-body portion 141c can slide with respect to each other in the ±x direction. Although Figure 5 The case in which the body portion 141 of the light beam blocking unit 140 has three sub-body portions is illustrated, but the present application is not limited thereto, and the body portion 141 can have two or four or more sub-body portions.

[0096] In a case in which the light beam blocking unit 140 is maximally extended, the total extension length of the light beam blocking unit 140 can be greater than the extension length Lx of the linear laser beam LLB (refer to FIG. 1). Figure 4 ) As the light beam blocking unit 140 is transferred in the ±x direction, the blocking region of the linear laser beam LLB can be determined, and the light beam blocking unit 140 can be expanded and contracted in the ±x direction to determine the blocking region. In a case in which it is necessary to minimize the area of the blocking region, the first sub-body portion 141a to the third sub-body portion 141c of the light beam blocking unit 140 can be completely overlapped. In contrast, in a case in which it is necessary to maximize the area of the blocking region, the overlap between the first sub-body portion 141a to the third sub-body portion 141c of the light beam blocking unit 140 can be minimized, thereby maximizing the extension of the light beam blocking unit 140. Thereby, the occupied space of the light beam blocking unit 140 can be minimized, and the space within the cavity CB of the manufacturing apparatus 100 of the display device can be effectively utilized.

[0097] Figure 6 is a perspective view schematically representing a part of the manufacturing apparatus of the display device to which an embodiment of the present application relates, illustrated with the light beam elimination unit as the center.

[0098] Referring to Figure 6 , the light beam elimination unit 150 can include an opening portion OP in which a part of the linear laser beam LLB reflected by the light beam blocking unit 140 Figure 3 ) is accommodated, and an internal space IS. The internal space IS can be defined by the inner surface of the light beam elimination unit 150 that reflects the part of the linear laser beam LLB accommodated by the opening portion OP multiple times. The light beam elimination unit 150 can be formed such that the internal space IS is reduced as it is closer to the opposite side of the opening portion OP.

[0099] As an example, the light beam elimination unit 150 can include a first elimination plate 151 and a second elimination plate 152 corresponding to each other, and two side plates 153 connecting the first elimination plate 151 and the second elimination plate 152 at both sides. The first elimination plate 151 can include an inner surface 151-I facing the second elimination plate 152 and an outer surface 151-O as an opposite surface of the inner surface 151-I. Similarly, the second elimination plate 152 can include an inner surface 152-I facing the first elimination plate 151 and an outer surface 152-O as an opposite surface of the inner surface 152-I. The inner surface 151-I of the first elimination plate 151, the inner surface 152-I of the second elimination plate 152, and inner surfaces of the two side plates 153 can form an inner space IS.

[0100] The first elimination plate 151 and the second elimination plate 152 can form an acute angle with each other such that the inner space IS is reduced more as it approaches a direction, for example, the -y direction. That is, the first elimination plate 151 and the second elimination plate 152 can meet at one side in a manner of forming an acute angle, and an opening part OP can be formed at an opposite side of the one side. In this case, the two side plates 153 can have a triangular shape.

[0101] On the other hand, as an example, the manufacturing apparatus 100 of a display device (refer to Figure 3 ) can have one light beam elimination unit 150, and in this case, a width of the opening part OP of the light beam elimination unit 150 along the x direction can be greater than an extension length of the linear laser beam LLB along the x direction. As another example, the manufacturing apparatus 100 of a display device can have a plurality of light beam elimination units 150 corresponding to a plurality of light beam blocking units 140.

[0102] Hereinafter, a method in which the light beam elimination unit 150 eliminates a portion of the linear laser beam LLB will be described with reference to Figure 7a and Figure 7b .

[0103] Figure 7a and Figure 7b are cross-sectional views schematically illustrating a portion of a manufacturing apparatus of a display device according to an embodiment of the present disclosure.

[0104] First, with reference to Figure 7aThe linear laser beam LLB reflected by the beam blocking unit 140 can be incident to the inner space IS of the beam elimination unit 150 through the opening portion OP of the beam elimination unit 150. The linear laser beam LLB can be reflected multiple times at the inner surfaces of the beam elimination unit 150. For example, the linear laser beam LLB can initially reach the inner surface 151-I of the first elimination plate 151 and be reflected at the inner surface 151-I, and can be sequentially reflected at the inner surface 152-I of the second elimination plate 152. During the linear laser beam LLB is reflected multiple times, the linear laser beam LLB can be absorbed little by little by the first elimination plate 151 and the second elimination plate 152, and finally can be eliminated by being heat-transferred to the surrounding atmosphere through the first elimination plate 151 and the second elimination plate 152. In order to make the absorption of the linear laser beam LLB easy, the first elimination plate 151 and the second elimination plate 152 can include a metal material (for example, copper, aluminum, etc.) having high thermal conductivity.

[0105] Then, referring to Figure 7b , the inner surface defining the inner space IS can include a concavo-convex. For example, the inner surface 151-I of the first elimination plate 151 and the inner surface 152-I of the second elimination plate 152 can include a concavo-convex. Thereby, when the linear laser beam LLB is reflected at the inner surface 151-I of the first elimination plate 151 and the inner surface 152-I of the second elimination plate 152, it can be guided so as to be diffusely reflected. Figure 7b A portion of the linear laser beam LLB diffusely reflected is indicated by a dotted arrow. The linear laser beam LLB diffusely reflected travels on various paths, and can be reflected at a wider area, thus having an advantage that the absorption based on the beam elimination unit 150 becomes easier.

[0106] Figure 8 is a perspective view schematically representing a portion of a manufacturing apparatus of a display device to which another embodiment of the present application relates, illustrated with the beam elimination unit as a center.

[0107] Referring to Figure 8 , a cooling unit 160 can be provided outside the beam elimination unit 150. As an example, the cooling unit 160 can be attached to the outer surface 151-O of the first elimination plate 151 and the outer surface 152-O of the second elimination plate 152 of the beam elimination unit 150, respectively. The cooling unit 160 can be a water-cooled cooling member using cooling water such as a cooling jacket, or can be an air-cooled cooling member using air. Thereby, it can be easier for the beam elimination unit 150 to absorb the linear laser beam LLB and dissipate heat to the surrounding atmosphere.

[0108] Figure 9 and Figure 10 is a plan view schematically representing a portion of a process in which a display device is manufactured by a manufacturing apparatus of a display device to which an embodiment of the present application relates.Figure 9 and Figure 10 A process of performing annealing to crystallize an amorphous silicon layer on a substrate into a polysilicon layer is shown.

[0109] with Figure 3 , Figure 4 , Figure 7a and Figure 7b Referring to Figure 9 and Figure 10 , a manufacturing method of a display device can include a step of forming an amorphous silicon layer on a substrate 10; a step of rotating the substrate 10 on which the amorphous silicon layer is formed at an angle θ in an xy plane parallel to one side of the substrate 10; a step of irradiating the amorphous silicon layer with a linear laser beam LLB extending in ±x directions during movement of the substrate 10 in ±y directions; a step of reflecting a portion of the linear laser beam LLB so that the portion of the linear laser beam LLB cannot reach the substrate 10; and a step of eliminating the portion of the linear laser beam LLB that is reflected. Further, the step of eliminating the portion of the linear laser beam LLB that is reflected can include a step of making the portion of the linear laser beam LLB incident to an inner space IS of a beam elimination unit 150 through an opening portion OP of the beam elimination unit 150; a step of reflecting the portion of the linear laser beam LLB multiple times on an inner surface defining the inner space IS of the beam elimination unit 150; and a step of absorbing the portion of the linear laser beam LLB by the beam elimination unit 150, wherein the substrate 10 is moved in the ±y directions so that an area of a reflection region in which the portion of the linear laser beam LLB is reflected can be increased or decreased.

[0110] Referring to Figure 9 , the substrate 10 can include first to fourth edge positions E1 to E4, and in order to make the first edge position E1 of the substrate 10 not parallel to an extension direction of the linear laser beam LLB, a stage 110 on which the substrate 10 is mounted can be rotated at an angle θ smaller than 90 degrees. In this state, the stage 110 can be moved in a first direction (for example, a y direction), and during movement of the stage 110, the linear laser beam LLB can be irradiated onto the substrate 10 multiple times, so that an amorphous silicon layer on the substrate 10 can be transformed into a polysilicon layer.

[0111] As a comparative example, in a state in which the first edge position E1 of the substrate 10 is parallel to the extension direction of the linear laser beam LLB, the stage 110 on which the substrate 10 is mounted can be moved in the first direction (for example, the y direction), and during movement, the linear laser beam LLB can be irradiated onto the substrate 10 multiple times. In manufacturing a display device using the polysilicon layer thus formed, there is a problem in that a stripe stain is generated on an image presented by the display device.

[0112] Specifically, for the plurality of virtual lines parallel to the first edge position El of the substrate 10, the virtual lines are also parallel to the extending direction of the linear laser beam LLB. The polycrystal silicon layers located on the same virtual line are formed by irradiation of the same linear laser beam, and thus the thin film transistors formed using the polycrystal silicon layers can have the same characteristics (e.g., threshold voltage) as each other. However, the polycrystal silicon layers located on different virtual lines are formed by irradiation of different linear laser beams, and thus the thin film transistors formed using such polycrystal silicon layers can have different characteristics as each other. Assuming that there is a defect in the irradiation of the linear laser beam at a position corresponding to any one of the plurality of virtual lines, the thin film transistors located on the any one line will all have different characteristics from the thin film transistors located on the other virtual lines, and thus a streak stain will occur along the any one line.

[0113] However, according to an embodiment of the present application, the first edge position El of the substrate 10 is in a state of not being parallel to the extending direction of the linear laser beam LLB, and for the plurality of virtual lines parallel to the first edge position El of the substrate 10, the virtual lines are not parallel to the extending direction of the linear laser beam LLB. Thus, even the thin film transistors located on the same virtual line can be formed by irradiation of different linear laser beams. As a result, the dispersion of the characteristics of the thin film transistors on the substrate 10 becomes uniform across the substrate 10. Thus, when a display device is manufactured by forming light emitting elements electrically connected to such thin film transistors, the phenomenon of a streak stain occurring along a specific line can be effectively prevented or suppressed.

[0114] Reference Signs List Figure 10 The greater the angle by which the stage 110 on which the substrate 10 is mounted is rotated, the less the streak stain will occur, but there can be a problem in that the irradiation area LA of the linear laser beam LLB will be separated from the area in which the substrate 10 is located more often. This can cause a defect in the display device 1.

[0115] Specifically, the amorphous silicon layer having a thickness of 3000 nm or more absorbs 99% or more of the incident linear laser beam LLB, and thus the portion of the substrate 10 located below the amorphous silicon layer can be hardly affected by the linear laser beam LLB. However, the portion of the substrate 10 on which the amorphous silicon layer is not provided or the portion of the stage 110 on which the substrate 10 is not provided can be damaged when the linear laser beam LLB is irradiated. In particular, the portion of the substrate 10 or the portion of the stage 110 can be scorched by the linear laser beam LLB, and in this process, particles can be generated and remain on the polycrystal silicon layer in which the amorphous silicon layer is crystallized, and thus a defect in the display device 1 can be caused. Thus, it is necessary to appropriately control the irradiation area LA so that the linear laser beam LLB does not irradiate the portion of the substrate 10 or the portion of the stage 110.

[0116] In a case where the display device is manufactured by the manufacturing apparatus of the display device related to an embodiment of the present application, the blocking region of the linear laser beam LLB can be increased or decreased, so that the irradiation region LA can be appropriately controlled, and for this, a part of a process in which the display device is manufactured by the manufacturing apparatus of the display device related to an embodiment of the present application will be schematically represented by a plan view as shown in FIG. 10. Figures 11a to 11e

[0117] Figures 11a to 11e is a plan view schematically representing a part of a process in which the display device is manufactured by the manufacturing apparatus of the display device related to an embodiment of the present application.

[0118] Referring to Figures 11a to 11e , the manufacturing apparatus 100 of the display device (refer to Figure 3 ) can irradiate the linear laser beam LLB extending in the x direction to the substrate 10 disposed on the worktable 110. At this time, the first beam blocking unit 140-1 and the second beam blocking unit 140-2 disposed apart from each other can move linearly along the ±x direction, and thus the blocking region of the linear laser beam LLB can be changed.

[0119] First, as shown in Figure 11a , at the initial stage of laser annealing, the first beam blocking unit 140-1 and the second beam blocking unit 140-2 can block a part of the linear laser beam LLB so that the linear laser beam LLB is not irradiated to a region in the worktable 110 where the substrate 10 is not disposed.

[0120] As the worktable 110 moves to the first position along the y direction, as shown in Figure 11b , the first beam blocking unit 140-1 is transferred in the +x direction and the second beam blocking unit 140-2 is transferred in the -x direction, and thus the blocking region of the linear laser beam LLB can be decreased.

[0121] As shown in Figure 11c , if the worktable 110 exceeds the first position, the first beam blocking unit 140-1 is transferred in the -x direction, and thus the blocking region of the linear laser beam LLB can be increased again. The second beam blocking unit 140-2 continues to be transferred in the -x direction, and thus the blocking region of the linear laser beam LLB can be decreased. As shown in Figure 11d , this operation is continuously performed until the worktable 110 moves to the second position.

[0122] As shown in Figure 11e , if the worktable 110 exceeds the second position, the second beam blocking unit 140-2 is transferred in the +x direction, and thus the blocking region of the linear laser beam LLB can be increased again. The first beam blocking unit 140-1 continues to be transferred in the -x direction, and thus the blocking region of the linear laser beam LLB can be increased.

[0123] ​As described above, the first light beam blocking unit 140-1 and the second light beam blocking unit 140-2 increase or decrease the blocked area of the linear laser beam LLB as the stage 110 moves, so that the linear laser beam LLB can be irradiated only to a desired area on the substrate 10. With this method, laser annealing can be performed in a state in which the stage 110 is inclined at a desired angle.

[0124] The application has been described with reference to the illustrated embodiments, but these are examples only and the skilled person will understand that various modifications and other embodiments can be made thereto. The true scope of the application is to be determined by the technical teaching contained in the claims.

Claims

1.A manufacturing apparatus of a display device, comprising: a stage that supports a substrate; a moving section that moves the stage in a first direction; a laser beam source that emits an original laser beam; an optical unit that is disposed on a path of the original laser beam and processes the original laser beam into a linear laser beam that extends in a second direction that intersects the first direction; a beam blocking unit that is movable in the second direction and is capable of blocking a portion of the linear laser beam, the beam blocking unit including a reflecting surface that reflects a portion of the linear laser beam; and a beam elimination unit that eliminates the portion of the linear laser beam that is blocked by the beam blocking unit, the beam elimination unit including: an opening portion that receives the portion of the linear laser beam that is reflected by the reflecting surface of the beam blocking unit; and an internal space defined by an inner surface that reflects the portion of the linear laser beam multiple times. 2.The manufacturing apparatus of a display device according to claim 1, wherein the beam blocking unit includes a first beam blocking unit and a second beam blocking unit that are disposed apart from and parallel to each other. 3.The manufacturing apparatus of a display device according to claim 1, wherein the beam blocking unit is composed of multiple stages and is capable of extending and retracting in the second direction. 4.The manufacturing apparatus of a display device according to claim 1, wherein a blocked area of the linear laser beam is determined as the beam blocking unit moves linearly in the second direction. 5.The manufacturing apparatus of a display device according to claim 1, wherein the inner surface includes unevenness. 6.The manufacturing apparatus of a display device according to claim 1, wherein the beam elimination unit includes a first elimination plate and a second elimination plate that correspond to each other, the first elimination plate and the second elimination plate form an acute angle such that a space between the first elimination plate and the second elimination plate decreases more toward one direction. 7.The manufacturing apparatus of a display device according to claim 6, wherein surfaces of the first elimination plate and the second elimination plate that face each other include unevenness. 8.The manufacturing apparatus of a display device according to claim 1, further comprising: a cooling unit that is disposed outside the beam elimination unit. 9.A manufacturing method of a display device, comprising: a step of forming an amorphous silicon layer on a substrate; a step of rotating the substrate on which the amorphous silicon layer is formed at a first angle on a virtual plane that is parallel to one face of the substrate; a step of irradiating a linear laser beam that extends in a second direction that intersects a first direction on the amorphous silicon layer during movement of the substrate in the first direction; a step of reflecting a portion of the linear laser beam so that the portion of the linear laser beam does not reach the substrate; and a step of eliminating the portion of the linear laser beam that is reflected, the step of eliminating the portion of the linear laser beam that is reflected includes: a step of causing the portion of the linear laser beam to be incident to an internal space of a beam elimination unit through an opening portion of the beam elimination unit. ​ ​ ​ a step of reflecting a portion of the linear laser beam multiple times on an inner surface defining the inner space of the beam elimination unit; and a step of absorbing, by the beam elimination unit, a portion of the linear laser beam, moving the substrate in the first direction, thereby increasing or decreasing an area of a reflection region in which a portion of the linear laser beam is reflected.

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