Apparatus and methods for manufacturing display devices and methods for manufacturing mask kits

Abstract

This invention relates to apparatus and methods for manufacturing display devices, and to methods for manufacturing mask kits. The apparatus for manufacturing a display device includes a mask kit comprising a silicon substrate having a first surface, a second surface opposite to the first surface, and a first opening portion penetrating the first and second surfaces, and a support substrate on the second surface having a second opening portion connected to the first opening portion. The width of the first opening portion at the first surface is smaller than the width of the first opening portion at the second surface.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0099937, filed on August 10, 2020, with the Korean Intellectual Property Office (KIPO), the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] One or more embodiments of this disclosure relate to apparatus for manufacturing a display device, a method for manufacturing a mask kit, and a method for manufacturing a display device. Background Technology

[0004] With the development of the information society, the demand for display devices for displaying images has increased in various ways. The field of display devices has rapidly shifted to thin, lightweight flat panel displays (FPDs) with large screen sizes, replacing bulky cathode ray tube (CRT) displays. Flat panel displays can include liquid crystal displays (LCDs), plasma display panels (PDPs), organic light-emitting diode (OLED) displays, and electrophoretic displays (EPDs), among others.

[0005] In a display device, an organic light-emitting device display may include an organic light-emitting diode (OLED), which includes a counter electrode, a pixel electrode, and an emitter layer (e.g., composed of a counter electrode, a pixel electrode, and an emitter layer). The electrodes and emitter layer can be formed using a mask kit.

[0006] The mask kit, including the mask sheet with openings, may include nickel (Ni), cobalt (Co), nickel alloys, and / or nickel-cobalt alloys, etc. The openings of the mask sheet comprising at least one of the above materials can be formed using a wet etching process. Optionally, the mask kit may include a silicon substrate serving as a mask. The silicon substrate may include openings, and the openings of the silicon substrate can be formed using dry etching and / or wet etching processes. Summary of the Invention

[0007] One or more aspects of the embodiments relate to apparatus for manufacturing a display device including a mask kit comprising a silicon substrate, a method for manufacturing a mask kit comprising a silicon substrate, and a method for manufacturing a display device.

[0008] Other aspects will be set forth in part in the description which follows, and in part will be obvious from the description or may be learned by practice of one or more embodiments of this disclosure.

[0009] According to one or more embodiments, in an apparatus for manufacturing a display device, the apparatus includes a mask kit comprising a silicon substrate having a first surface, a second surface opposite to the first surface, and a first opening portion penetrating the first and second surfaces, and a support substrate on the second surface having a second opening portion connected to the first opening portion. The width of the first opening portion at the first surface is smaller than the width of the first opening portion at the second surface.

[0010] In this embodiment, the thickness of the support substrate may be greater than the thickness of the silicon substrate.

[0011] In one embodiment, the support substrate can be directly connected to the second surface of the silicon substrate.

[0012] In one embodiment, each of the silicon substrate and the support substrate may include a plurality of silicon atoms arranged in a first arrangement direction and a second arrangement direction, the second arrangement direction intersecting the first arrangement direction. The outermost first outer silicon atom among the plurality of silicon atoms in the silicon substrate and the outermost second outer silicon atom among the plurality of silicon atoms in the support substrate may be adjacent to each other, with a second surface between the first and second outer silicon atoms. A third arrangement direction from the center of the first outer silicon atom to the center of the second outer silicon atom may intersect the first and second arrangement directions.

[0013] In one embodiment, the supporting substrate may include a plurality of first silicon atoms arranged in a first arrangement direction and a second arrangement direction, the second arrangement direction intersecting the first arrangement direction. The silicon substrate may include a plurality of second silicon atoms arranged in a first arrangement direction and a third arrangement direction, the third arrangement direction intersecting the first and second arrangement directions.

[0014] In one embodiment, the second surface may include Si2O.

[0015] In one embodiment, the device may further include an intermediate adhesive member between the support substrate and the silicon substrate.

[0016] In one embodiment, the mask kit may further include a mask frame with an opening area and a mask sheet on the mask frame, the mask sheet including an upper surface, a lower surface opposite the upper surface, and a mask opening portion penetrating the upper and lower surfaces. A support substrate may be on the mask sheet. A second surface of the silicon substrate may face the upper surface of the mask sheet.

[0017] In one embodiment, one of the mask sheet and the support substrate may include a concave portion facing the other of the mask sheet and the support substrate, and the device may further include an adhesive member in the concave portion.

[0018] In one embodiment, the device may further include a chamber having a mask kit therein, and a source unit within the chamber, the source unit being configured to supply deposition material. A second surface of the silicon substrate may face the source unit.

[0019] According to one or more embodiments, a method for manufacturing a mask kit is provided, the method comprising: preparing a mask substrate including a first layer, a second layer, and a third layer; forming a first opening in the first layer; disposing a support substrate on the first layer, the support substrate having a second opening connected to the first opening; removing the third layer; and removing the second layer.

[0020] In this embodiment, each of the first and third layers may include silicon. The second layer may include silicon oxide.

[0021] In one embodiment, the formation of the first opening may include dry etching of the first layer, and forming the first opening at a first surface of the first layer and at a second surface opposite to the first surface. The width of the first opening at the first surface may be smaller than the width of the first opening at the second surface. The first surface may be the surface facing the second layer.

[0022] In one embodiment, the arrangement of the support substrate may include directly connecting the first layer to the support substrate.

[0023] In one embodiment, a plurality of first opening portions may be formed in the first layer, the plurality of first opening portions including the first opening portions. The arrangement of the support substrate may include connecting second opening portions to the plurality of first opening portions.

[0024] In an embodiment, the method may further include forming a silicon oxide film on the surfaces of a mask substrate and a support substrate.

[0025] In an embodiment, the method may further include removing the silicon oxide film, wherein the removal of the second layer is performed simultaneously (e.g., synchronously) with the removal of the silicon oxide film.

[0026] In an implementation, the removal of the third layer may include polishing the third layer and wet etching or dry etching the third layer.

[0027] In one embodiment, the arrangement of the support substrate may include bonding the support substrate to the first layer using an intermediate adhesive member.

[0028] In one embodiment, the method may further include arranging a mask sheet having a mask opening portion and a mask frame having an opening area on a support substrate. The first layer may include a first surface facing the second layer and a second surface opposite to the first surface. The second surface of the first layer faces the mask sheet.

[0029] According to one or more embodiments, a method of manufacturing a display device includes arranging a display substrate in a cavity, supplying a deposition material using source cells in the cavity, and depositing the deposition material on the display substrate by passing the deposition material through a mask kit facing the source cells. The mask kit may include a silicon substrate including a first surface, a second surface opposite to the first surface, and a first opening portion penetrating the first and second surfaces, and a support substrate on the second surface, the support substrate including a second opening portion connected to the first opening portion. The first surface may face the display substrate. The second surface may face the source cells. The width of the first opening portion at the first surface may be smaller than the width of the first opening portion at the second surface.

[0030] In this embodiment, the thickness of the support substrate may be greater than the thickness of the silicon substrate.

[0031] In one embodiment, the support substrate can be directly connected to the second surface of the silicon substrate.

[0032] In one embodiment, each of the silicon substrate and the support substrate may include a plurality of silicon atoms arranged in a first arrangement direction and a second arrangement direction, the second arrangement direction intersecting the first arrangement direction. The outermost first outer silicon atom among the plurality of silicon atoms in the silicon substrate and the outermost second outer silicon atom among the plurality of silicon atoms in the support substrate may be adjacent to each other, with a second surface between the first and second outer silicon atoms. A third arrangement direction from the center of the first outer silicon atom to the center of the second outer silicon atom may intersect the first and second arrangement directions.

[0033] In one embodiment, the supporting substrate may include a plurality of first silicon atoms arranged in a first arrangement direction and a second arrangement direction, the second arrangement direction intersecting the first arrangement direction. The silicon substrate may include a plurality of second silicon atoms arranged in a first arrangement direction and a third arrangement direction, the third arrangement direction intersecting the first and second arrangement directions.

[0034] In one embodiment, the second surface may include Si2O.

[0035] In an embodiment, the method may further include an intermediate adhesive member between a support substrate and a silicon substrate.

[0036] In one embodiment, a plurality of first opening portions may include the first opening portions. A second opening portion may be connected to the plurality of first opening portions.

[0037] In one embodiment, the mask kit may further include a mask frame with an opening area and a mask sheet on the mask frame, the mask sheet including an upper surface, a lower surface opposite to the upper surface, and a mask opening portion penetrating the upper and lower surfaces. A support substrate may be disposed on the mask sheet. A second surface of the silicon substrate may face the upper surface of the mask sheet.

[0038] In one embodiment, one of the mask sheet and the support substrate may include a concave portion facing the other of the mask sheet and the support substrate. An adhesive member may be present in the concave portion. Attached Figure Description

[0039] The above and other aspects, features, and advantages of certain embodiments of this disclosure will become more apparent from the following description, taken in conjunction with the accompanying drawings, wherein:

[0040] Figure 1 This is a schematic cross-sectional view of an apparatus for manufacturing a display device according to an embodiment;

[0041] Figure 2 A schematic exploded perspective view of a mask kit according to an embodiment;

[0042] Figure 3 This is a schematic plan view of a mask kit according to an embodiment;

[0043] Figure 4 For along Figure 3 A cross-sectional view of the mask kit taken from line IV-IV';

[0044] Figure 5A According to the implementation method Figure 4 A magnified view of part A of the mask kit;

[0045] Figure 5B According to another embodiment Figure 4 A magnified view of part A of the mask kit;

[0046] Figure 5C For comparison examples Figure 4 A magnified view of part A, used to compare with Figure 5A and Figure 5B The implementation methods were compared;

[0047] Figure 6 A cross-sectional view of a mask kit according to another embodiment;

[0048] Figure 7 A schematic plan view of a mask kit according to another embodiment;

[0049] Figure 8 For along Figure 7 The line VIII-VIII' intercepted Figure 7 The image shows a cross-sectional view of the mask kit.

[0050] Figures 9A to 9J This is a cross-sectional view of a method for manufacturing a mask kit according to an embodiment;

[0051] Figure 10 A cross-sectional view of a method for manufacturing a mask kit according to another embodiment; and

[0052] Figure 11 This is a schematic cross-sectional view of a display device manufactured using equipment for manufacturing a display device, according to an embodiment. Detailed Implementation

[0053] Embodiments thereof will now be explained in more detail with reference to the accompanying drawings, wherein like reference numerals denote like elements throughout. In this regard, embodiments of the present disclosure may take different forms and should not be construed as limited to the descriptions set forth herein. Therefore, embodiments are described below with reference only to the drawings to explain aspects of one or more embodiments of the present disclosure. As used herein, the term “and / or” includes any and all combinations of one or more of the associated enumerated items. Throughout the present disclosure, the expression “at least one of a, b, and c” indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0054] Because this disclosure allows for various variations and numerous implementations, the embodiments will be illustrated in the accompanying drawings and described in detail in the written description. The advantages and features of this disclosure, as well as methods of implementing them, can be more readily understood by referring to the following detailed description of exemplary embodiments and the accompanying drawings. However, this is not intended to limit this disclosure to a particular mode of practice, and it should be recognized that all variations, equivalents, and alternatives without departing from the spirit and scope of this disclosure are encompassed within it.

[0055] In the description of this disclosure, detailed explanations will be omitted where it is considered that certain detailed explanations of the related art may unnecessarily obscure the nature of this disclosure.

[0056] It should be understood that although the terms "first," "second," etc., may be used in this document to describe various components, these components should not be limited by these terms. These components are used only to distinguish one component from another.

[0057] As used herein, the singular forms “a”, “an”, and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0058] It should be further understood that the terms “includes,” “including,” “comprises,” and / or “comprising” as used herein specify the presence of a feature, step, operation, element, component, and / or group thereof, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups thereof.

[0059] It will be understood that when a layer, region, or component is referred to as being “formed on” another layer, region, or component, it can be formed directly or indirectly on that other layer, region, or component. That is, for example, intermediate layers, regions, or components may exist.

[0060] For ease of explanation, the dimensions of the components in the accompanying drawings may be enlarged. In other words, because the dimensions and thicknesses of the components in the accompanying drawings are interpreted arbitrarily for ease of explanation, the following embodiments are not limited thereto.

[0061] When a particular implementation can be carried out differently, the specific process sequence can be different from the order in which it is described. For example, two consecutively described processes can be carried out substantially simultaneously, or in the reverse order of their description.

[0062] It will be understood that when a layer, region, or component is referred to as being "connected to" another layer, region, or component, it may be directly connected to the other layer, region, or component, or indirectly connected to the other layer, region, or component via an intermediate layer, region, or component. For example, in this specification, when a layer, region, or component is referred to as being electrically connected to another layer, region, or component, it may be directly electrically connected to the other layer, region, or component, or indirectly electrically connected to the other layer, region, or component via an intermediate layer, region, or component.

[0063] Furthermore, when describing embodiments of this disclosure, the word "may" refers to "one or more embodiments of this disclosure".

[0064] For ease of description, this document uses spatial relative terms such as “below,” “under,” “down,” “above,” “top,” “bottom,” and “top” to describe the relationship of one element or feature illustrated in the accompanying drawings to another element (or multiple elements) or feature (or multiple features). It should be understood that, in addition to the orientations depicted in the accompanying drawings, spatial relative terms are intended to encompass different orientations of the device in use or operation. For example, if the device in the accompanying drawings is flipped, an element described as “below” or “under” other elements or features would be oriented as “above” or “on” other elements or features. Thus, the term “below” can encompass both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein should be interpreted accordingly.

[0065] As used herein, the terms “substantially,” “about,” and similar terms are used as approximations and not as terms of degree, and are intended to take into account the inherent biases in measurements or calculations that would be recognized by one of ordinary skill in the art.

[0066] As used herein, the terms “use,” “using,” and “used” can be considered synonymous with the terms “utilize,” “utilizing,” and “utilized,” respectively.

[0067] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms, such as those defined in commonly used dictionaries, shall be interpreted as having a meaning consistent with their meaning in the context of the relevant field and shall not be interpreted in an idealized or overly formal sense unless expressly so specified herein.

[0068] Figure 1 This is a schematic cross-sectional view of an apparatus 1000 for manufacturing a display device according to an embodiment. Figure 2 A schematic exploded perspective view of a mask kit 1500 according to an embodiment. Figure 3 This is a schematic plan view of a mask kit 1500 according to an embodiment. Figure 4 For along Figure 3 A cross-sectional view of the mask kit 1500 cut from line IV-IV'.

[0069] refer to Figures 1 to 4 The apparatus 1000 for manufacturing a display device may include a chamber 1100, a substrate support 1200, a mask support 1300, a source unit 1400, a mask kit 1500, an electromagnetic unit 1600, a vision unit 1700, and a pressure control unit 1800.

[0070] The chamber 1100 may have a space (e.g., internal volume) and an opening side (e.g., an opening on one side of the chamber 1100) through which the display substrate D can be removed or loaded. A shielding member 1110, including a gate valve or the like, may be provided on the opening side of the chamber 1100 to selectively open or close.

[0071] The substrate support 1200 can support a display substrate D placed thereon. For example, the substrate support 1200 can passively support the display substrate D placed thereon by applying suction to one surface of the display substrate D, or by allowing the surface of the display substrate D to adhere to the substrate support 1200. In one embodiment, the substrate support 1200 may be provided in the form of a bracket fixed to the inside of the chamber 1100. However, this disclosure is not limited thereto. For example, in another embodiment, the substrate support 1200 may be in the form of a shuttle capable of linear movement within the chamber 1100, and the display substrate D may be placed or positioned in or on the substrate support 1200. In the following description, for ease of explanation, the case in which the substrate support 1200 is in the form of a bracket fixed to the inside of the chamber 1100 is described in more detail.

[0072] A mask kit 1500 may be placed on a mask support 1300. The mask support 1300 may be disposed within a chamber 1100. The mask support 1300 may be in the form of a bracket fixed to the inside of the chamber 1100. In an embodiment, the mask support 1300 may be adjustable (e.g., fine-tuned) in position of the mask kit 1500. In this case, the mask support 1300 may include separate drive units and / or alignment units, etc., to move the mask kit 1500 in different directions.

[0073] Source unit 1400 may be configured to face mask kit 1500. Source unit 1400 may contain deposition material and may be vaporized or sublimated by applying heat to the deposition material. Therefore, source unit 1400 may supply deposition material.

[0074] The mask kit 1500 may be supported by the mask support 1300. The mask kit 1500 may include a silicon substrate 100, a support substrate 200, a mask sheet 300, a mask frame 400, and an adhesive member 500.

[0075] The silicon substrate 100 may be disposed on the support substrate 200. For example, the silicon substrate 100 may be disposed closer to the display substrate D and / or the electromagnetic unit 1600 than the support substrate 200. The silicon substrate 100 may be disposed farther from the source unit 1400 than the support substrate 200.

[0076] In some embodiments, the silicon substrate 100 may be connected (e.g., directly connected) to the support substrate 200. For example, the silicon substrate 100 may be connected to the support substrate 200 via an intermediate adhesive member, and in other embodiments, the silicon substrate 100 may be directly connected to the support substrate 200. In the following description, the case in which the silicon substrate 100 is directly connected to the support substrate 200 is described in more detail.

[0077] The silicon substrate 100 may include a plurality of silicon substrates on a mask sheet 300, which is a single mask sheet. In embodiments, the silicon substrates 100 may be configured to be separated or spaced apart from each other on the mask sheet 300 (e.g., a single mask sheet 300). For example, the silicon substrates 100 may be disposed on the mask sheet 300 (e.g., a single mask sheet 300) separated or spaced apart from each other in a first direction (e.g., the X direction) and / or separated or spaced apart from each other in a second direction (e.g., the Y direction). In another embodiment, at least a portion of the silicon substrate 100 may be integrally provided on the mask sheet 300, which is a single mask sheet.

[0078] The silicon substrate 100 may be configured to correspond to the mask opening portion 300OP of the mask sheet 300. In other words, the silicon substrate 100 may overlap with the mask opening portion 300OP of the mask sheet 300 (e.g., in a third direction, such as the Z direction). In an embodiment, the silicon substrate 100 may include multiple silicon substrates on the mask sheet 300, which is a single mask sheet. Furthermore, the mask sheet 300 may include multiple mask opening portions that serve as mask opening portions 300OP. In this case, the silicon substrate 100 may be configured to correspond to each mask opening portion 300OP. In other words, the silicon substrate 100 may overlap with each mask opening portion 300OP.

[0079] The silicon substrate 100 may include a first surface S1 and a second surface S2 opposite to the first surface S1. The first surface S1 may be configured to face the electromagnetic unit 1600 and / or the display substrate D. The second surface S2 may be configured to face the source unit 1400. In addition, the second surface S2 may be configured to face the upper surface US of the mask 300.

[0080] The silicon substrate 100 may include a first opening portion OP1. The first opening portion OP1 may penetrate a first surface S1 and a second surface S2. In one or more embodiments, the first opening portion OP1 may extend through the second surface S2. The first opening portion OP1 may have a tapered shape (e.g., the first opening portion OP1 may be defined by tapered sidewalls). In an embodiment, the first width d1 of the first opening portion OP1 in the first surface S1 may be smaller than the second width d2 of the first opening portion OP1 in the second surface S2. The first width d1 may be defined as the shortest distance between the inner surfaces of the silicon substrate 100 facing each other and defining the first opening portion OP1 in the first surface S1. The second width d2 may be defined as the shortest distance between the inner surfaces of the silicon substrate 100 facing each other and defining the first opening portion OP1 in the second surface S2. Because the first surface S1 faces the display substrate D, the width of the first opening portion OP1 may decrease in the direction from the source cell 1400 toward the display substrate D. In this case, the silicon substrate 100 can precisely control the position of the deposition material on the display substrate D in the apparatus 1000 for manufacturing a display device. Therefore, the machining accuracy of the equipment 1000 used to manufacture display devices can be improved.

[0081] In one embodiment, the width of the first opening portion OP1 may continuously decrease. For example, the width of the first opening portion OP1 may continuously decrease in the direction from the second surface S2 toward the first surface S1. In another embodiment, the inner surface of the first opening portion OP1 may include a curved surface. In the following description, the case in which the width of the first opening portion OP1 continuously decreases is described in more detail.

[0082] Unlike one or more embodiments of this disclosure, when the first opening portion OP1 is formed vertically or in the normal direction without being tapered, and the apparatus 1000 for manufacturing a display device repeats the deposition process or performs a deposition process, the first opening portion OP1 may be blocked by the deposition material supplied by the source unit 1400. In this case, the cycle of the cleaning process for removing the deposition material deposited in or blocking the first opening portion OP1 can be shortened. As the amount of deposition material used by the source unit 1400 increases, the efficiency (e.g., throughput) of the apparatus 1000 for manufacturing a display device may decrease. For example, efficiency may decrease because cleaning processes have to be performed more frequently and / or for longer periods. In one or more embodiments of this disclosure, the first width d1 of the first opening portion OP1 in the first surface S1 may be smaller than the second width d2 of the first opening portion OP1 in the second surface S2. For example, the first opening portion OP1 may be tapered. Therefore, compared to the case where the first opening portion OP1 is not tapered, the time (duration) until the first opening portion OP1 is blocked by the deposition material supplied by the source unit 1400 can be increased. Therefore, the efficiency of the equipment 1000 used to manufacture display devices can be increased.

[0083] The silicon substrate 100 may include silicon (Si). In an embodiment, the silicon substrate 100 may include silicon crystals. For example, the silicon substrate 100 may include a plurality of silicon atoms. In other words, the silicon substrate 100 may be a silicon wafer. Because the silicon substrate 100 is a silicon wafer, the first opening portion OP1 can be formed by a dry etching process, which will be described in more detail below.

[0084] The support substrate 200 can support the silicon substrate 100. The support substrate 200 can be disposed on the second surface S2 of the silicon substrate 100. The support substrate 200 can be disposed between the silicon substrate 100 and the mask 300. In addition, the support substrate 200 can be configured to be farther away from the display substrate D and / or the electromagnetic unit 1600 than the silicon substrate 100. The support substrate 200 can be configured to be closer to the source unit 1400 than the silicon substrate 100.

[0085] The second thickness t2 of the support substrate 200 may be greater than the first thickness t1 of the silicon substrate 100. The second thickness t2 of the support substrate 200 may be defined as the shortest distance between the upper surface and the lower surface of the support substrate 200. The first thickness t1 of the silicon substrate 100 may be defined as the shortest distance between the first surface S1 and the second surface S2 of the silicon substrate 100. During the manufacture of the mask kit 1500, the silicon substrate 100 may be damaged when a robotic arm or the like contacts (e.g., directly contacts) and transfers it. During the manufacture of the mask kit 1500, damage to the silicon substrate 100 can be prevented or reduced when a robotic arm or the like contacts (e.g., directly contacts) and transfers the support substrate 200, which has a thickness greater than that of the silicon substrate 100.

[0086] In an embodiment, the support substrate 200 may include a plurality of support substrates on a mask sheet 300 (e.g., a mask sheet 300 as a single mask sheet). In an embodiment, the support substrates 200 may be configured to be separated or spaced apart from each other on the mask sheet 300 (e.g., a mask sheet 300 as a single mask sheet). For example, the support substrates 200 may be configured to be separated or spaced apart from each other on the mask sheet 300 (e.g., a mask sheet 300 as a single mask sheet) in a first direction (e.g., the X direction) and / or in a second direction (e.g., the Y direction).

[0087] The support substrate 200 may be configured to correspond to the mask opening portion 300OP of the mask sheet 300. In other words, the support substrate 200 may overlap with the mask opening portion 300OP of the mask sheet 300 (e.g., in a third direction, such as the Z direction). In an embodiment, the support substrate 200 may include multiple support substrates on the mask sheet 300, which is a single mask sheet. Furthermore, the mask sheet 300 may include multiple mask opening portions that serve as mask opening portions 300OP. In this case, the support substrate 200 may be configured to correspond to each mask opening portion 300OP. In other words, the support substrate 200 may overlap with each mask opening portion 300OP.

[0088] The support substrate 200 may include a second opening portion OP2. The second opening portion OP2 may penetrate both the upper and lower surfaces of the support substrate 200. For example, the second opening portion OP2 may extend through the support substrate 200. In an embodiment, the second opening portion OP2 may be connected to (communicating with) a first opening portion OP1. Therefore, deposition material supplied by the source unit 1400 can be deposited on the display substrate D through the second opening portion OP2 and the first opening portion OP1. In an embodiment, the second opening portion OP2 may be connected to the first opening portion OP1. In other words, the second opening portion OP2, as a single opening portion, may be connected to each of the first opening portions OP1.

[0089] In one embodiment, the support substrate 200 may include silicon. In other words, the support substrate 200 may include silicon crystals. For example, the support substrate 200 may include a plurality of silicon atoms. In this case, the support substrate 200 may be a silicon wafer and may include the same material as the silicon substrate 100. In another embodiment, the support substrate 200 may include glass.

[0090] The support substrate 200 may be connected (e.g., directly connected) to the silicon substrate 100. For example, in one or more embodiments, the support substrate 200 may be directly connected to the second surface S2 of the silicon substrate 100. A support substrate 200 directly connected to the second surface S2 of the silicon substrate 100 may refer to a support substrate 200 and the silicon substrate 100 without any adhesive members, etc. The support substrate 200 may be bonded to and directly connected to the silicon substrate 100. When both the support substrate 200 and the silicon substrate 100 comprise silicon crystals, the support substrate 200 and the silicon substrate 100 may be bonded to each other (e.g., directly bonded or fused bonded). In this case, in an embodiment, the second surface S2 where the support substrate 200 and the silicon substrate 100 are directly connected may comprise Si2O. In another embodiment, when the support substrate 200 comprises glass, the support substrate 200 and the silicon substrate 100 may be anoly bonded.

[0091] A mask sheet 300 may be disposed below a support substrate 200. The support substrate 200 may be disposed on the mask sheet 300. In one or more embodiments, the support substrate 200 may be disposed between the mask sheet 300 and the silicon substrate 100. Furthermore, the mask sheet 300 may be disposed on a mask frame 400. The mask sheet 300 may be disposed between the mask frame 400 and the support substrate 200.

[0092] The mask 300 may include an upper surface US and a lower surface LS opposite to the upper surface US. The upper surface US of the mask 300 may face the second surface S2 of the silicon substrate 100. In addition, the upper surface US of the mask 300 may face the support substrate 200. The lower surface LS of the mask 300 may face the mask support 1300 and / or the source cell 1400.

[0093] The mask sheet 300 may include a mask opening portion 300OP. The mask opening portion 300OP may penetrate the upper surface US and the lower surface LS of the mask sheet 300. In one or more embodiments, the mask opening portion 300OP may extend through the mask sheet 300. Furthermore, the mask opening portion 300OP may be connected to a second opening portion OP2. In one embodiment, the mask sheet 300 may include the mask opening portion 300OP. In this case, the mask opening portion 300OP may be connected to the second opening portion OP2.

[0094] In one embodiment, the width of the mask opening portion 300OP may be the same as (equal to) or substantially the same as (substantially equal to) the width of the second opening portion OP2. In another embodiment, the width of the mask opening portion 300OP may be different from the width of the second opening portion OP2. For example, the width of the mask opening portion 300OP may be greater than or less than the width of the second opening portion OP2.

[0095] The mask 300 may be made of stainless steel, Invar alloy, Ni, Co, nickel alloy, and / or nickel-cobalt alloy. Therefore, when the electromagnetic unit 1600 applies electrical and / or magnetic force to the mask 300, the mask 300 may approach the display substrate D in a direction close to the electromagnetic unit 1600. In this case, the silicon substrate 100 may come into contact (e.g., in close contact) with the display substrate D.

[0096] One of the support substrate 200 and the mask sheet 300 may include a concave portion CP facing the other of the support substrate 200 and the mask sheet 300. In one embodiment, the support substrate 200 may include a concave portion CP facing the mask sheet 300 (e.g., a surface of the mask sheet 300). In this case, the concave portion CP of the support substrate 200 may face the upper surface US of the mask sheet 300. In another embodiment, the mask sheet 300 may include a concave portion facing the support substrate 200 (e.g., a surface of the support substrate 200). In another embodiment, the support substrate 200 may include a concave portion CP facing the mask sheet 300, and the mask sheet 300 may include a concave portion facing the support substrate 200. For example, the concave portion CP of the support substrate 200 may face the concave portion CP of the mask sheet 300. In the following description, the case in which the support substrate 200 includes a concave portion CP facing the mask sheet 300 is described in more detail.

[0097] In one embodiment, the support substrate 200 may include a concave portion CP. The concave portion CP may be configured to correspond to a vertex of the support substrate 200. Optionally, the concave portion CP may be configured to correspond to a vertex of the support substrate 200 and / or a side surface of the support substrate 200.

[0098] An adhesive member 500 may be disposed in the concave portion CP. The adhesive member 500 may bond the support substrate 200 and the mask sheet 300. In one embodiment, the adhesive member 500 may include an adhesive metal. The adhesive member 500 may include a material that does not generate degassing. For example, the adhesive member 500 may include indium (In). Optionally, the adhesive member 500 may include an In composite. In another embodiment, the adhesive member 500 may include a resin and / or epoxy resin, etc.

[0099] The mask frame 400 can be disposed below the mask sheet 300. In other words, the mask sheet 300 can be disposed on the mask frame 400. The mask sheet 300 can be disposed between the support substrate 200 and the mask frame 400. The mask sheet 300 can be fixed to the mask frame 400 in a stretched state. The mask sheet 300 can be fixed to the mask frame 400 by welding. The mask frame 400 can be placed on the mask support member 1300.

[0100] The mask frame 400 may include an opening region OA. The opening region OA of the mask frame 400 may overlap with the mask sheet 300. Furthermore, the opening region OA may be connected to a mask opening portion 300OP of the mask sheet 300. In one embodiment, the opening region OA may be connected to the mask opening portion 300OP. Deposition material supplied by the source unit 1400 may pass through the opening region OA. The mask frame 400 may include a plurality of frames surrounding the opening region OA. The frames may extend in a first direction (e.g., the X direction) and / or in a second direction (e.g., the Y direction). The mask frame 400 may include a material with low deformation (i.e., not easily deformed), i.e., a metal with high rigidity.

[0101] The electromagnetic unit 1600 may be disposed on the side opposite to the source unit 1400 relative to the mask assembly 1500. The electromagnetic unit 1600 can apply a force toward the display substrate D to the mask assembly 1500 by applying electrical and / or magnetic force to the mask sheet 300. In particular, the electromagnetic unit 1600 can prevent or reduce sagging of the mask sheet 300 and further allow the mask sheet 300 to approach the display substrate D. Furthermore, the electromagnetic unit 1600 can maintain a constant spacing between the mask sheet 300 and the display substrate D relative to the length direction of the mask sheet 300. In one embodiment, the electromagnetic unit 1600 may include an electrostatic chuck. In another embodiment, the electromagnetic unit 1600 may include a magnetic chuck.

[0102] A vision unit 1700 is disposed in a cavity 1100 and is capable of capturing images of the display substrate D and the mask assembly 1500. The vision unit 1700 may include a camera to capture images of the display substrate D and the mask assembly 1500. The positions of the display substrate D and the mask assembly 1500 can be identified based on the images captured by the vision unit 1700, and the position of the mask assembly 1500 on the mask support 1300 can be adjusted (e.g., fine-tuned) based on the images (e.g., based on the positions of the display substrate D and the mask assembly 1500 identified using image recognition).

[0103] The pressure control unit 1800 is connected to the chamber 1100 and can adjust the pressure in the chamber 1100. For example, the pressure control unit 1800 can adjust the pressure in the chamber 1100 to be the same as or similar to atmospheric pressure. In addition, the pressure control unit 1800 can adjust the pressure in the chamber 1100 to be the same as or similar to a vacuum state.

[0104] The pressure control unit 1800 may include a connecting pipe 1810 connected to the chamber 1100 and a pump 1820 provided on the connecting pipe 1810. Depending on the operation of the pump 1820, external air may be introduced or supplied through the connecting pipe 1810, or gas in the chamber 1100 may be directed or purged to the outside through the connecting pipe 1810.

[0105] Figure 5A According to the implementation method Figure 4 A magnified view of part A of the mask kit 1500.

[0106] refer to Figure 5A The mask kit 1500 may include a silicon substrate 100 and a support substrate 200. The upper surface 200US of the support substrate 200 may face the second surface S2 of the silicon substrate 100. In an embodiment, as... Figure 5AAs shown, the upper surface 200US of the support substrate 200 may be partially exposed to the outside. For example, the support substrate 200 may extend further in the direction parallel to the second surface S2 than the silicon substrate 100 extends in the direction parallel to the second surface S2. In this case, the support substrate 200 may extend in the direction parallel to the second surface S2. In another embodiment, the second surface S2 of the silicon substrate 100 may be partially exposed to the outside. For example, the silicon substrate 100 may extend further in the direction parallel to the second surface S2 than the support substrate 200 extends in the direction parallel to the second surface S2. In this case, the silicon substrate 100 may extend in the direction parallel to the second surface S2. Thus, when the silicon substrate 100 and the support substrate 200 are directly connected to each other, the side surface 100SS of the silicon substrate 100 may not be aligned with the side surface 200SS of the support substrate 200. The side surface 100SS of the silicon substrate 100 may intersect with the second surface S2 of the silicon substrate 100 and may be exposed to the outside. The side surface 200SS of the support substrate 200 may intersect with the upper surface 200US of the support substrate 200 and may be exposed to the outside.

[0107] Both the silicon substrate 100 and the support substrate 200 may include a plurality of silicon atoms SA. For example... Figure 5A As shown, silicon atoms SA can be arranged in a first alignment direction D1 and a second alignment direction D2. The first alignment direction D1 and the second alignment direction D2 can intersect each other. For example, the first alignment direction D1 and the second alignment direction D2 can form an acute angle, a right angle, or an obtuse angle. The case where the first alignment direction D1 and the second alignment direction D2 form a right angle is described in more detail in the following description.

[0108] The plurality of outer silicon atoms disposed on the outermost side of the silicon atoms SA (e.g., the outermost side of the silicon substrate 100 and the support substrate 200) can be defined as a plurality of outer silicon atoms (OSA). In other words, the outer silicon atom OSA can be defined as the silicon atom disposed on the outermost side of the silicon atoms SA. In an embodiment, the outer silicon atom OSA included in the silicon substrate 100 can define the side surface 100SS of the silicon substrate 100. Furthermore, the outer silicon atom OSA included in the support substrate 200 can define the side surface 200SS of the support substrate 200.

[0109] The silicon atom SA may include a first outer silicon atom OSA1 (e.g., the outer silicon atom of the supporting substrate 200) and a second outer silicon atom OSA2 (e.g., the outer silicon atom of the silicon substrate 100) disposed on the outermost side of the silicon atom SA and adjacent to each other, with the second surface S2 between the first outer silicon atom OSA1 (e.g., the outer silicon atom of the supporting substrate 200) and the second outer silicon atom OSA2 (e.g., the outer silicon atom of the silicon substrate 100). For example, the outer silicon atom OSA may include a first outer silicon atom OSA1 and a second outer silicon atom OSA2 that are adjacent to each other, with the second surface S2 between the first outer silicon atom OSA1 and the second outer silicon atom OSA2. In other words, the outermost first outer silicon atom among the plurality of silicon atoms in the silicon substrate and the outermost second outer silicon atom among the plurality of silicon atoms in the supporting substrate are adjacent to each other, with the second surface between the first outer silicon atom and the second outer silicon atom.

[0110] The third alignment direction D3, from the center OSAC1 of the first outer silicon atom OSA1 to the center OSAC2 of the second outer silicon atom OSA2, can intersect or cross the first alignment direction D1 and the second alignment direction D2. The center OSAC1 of the first outer silicon atom OSA1 can be defined as the position of the nucleus of the first outer silicon atom OSA1. Furthermore, the center OSAC2 of the second outer silicon atom OSA2 can be defined as the position of the nucleus of the second outer silicon atom OSA2. In other words, as... Figure 5A As shown, the silicon atoms SA included in the silicon substrate 100 and the silicon atoms SA included in the support substrate 200 may be misaligned or offset from each other. This is because even when the silicon substrate 100 and the support substrate 200 comprise the same silicon crystal and are directly connected to each other, the atomic bonds between the silicon substrate 100 and the support substrate 200 may not be perfectly matched (e.g., they may be misaligned).

[0111] Figure 5B According to another embodiment Figure 4 A magnified view of part A of the mask kit 1500. Figure 5B In, because of Figure 5A The same reference numerals in the accompanying drawings denote the same elements, and therefore, their redundant descriptions are not repeated.

[0112] refer to Figure 5B The mask kit 1500 may include a silicon substrate 100 and a support substrate 200.

[0113] When the silicon substrate 100 and the support substrate 200 are directly connected to each other, the side surface 100SS of the silicon substrate 100 and the side surface 200SS of the support substrate 200 can intersect each other. In other words, the side surface 100SS of the silicon substrate 100 and the side surface 200SS of the support substrate 200 are not included in the same plane and can intersect each other.

[0114] The silicon substrate 100 and the support substrate 200 may each include silicon atoms SA. For example, the support substrate 200 may include a plurality of first silicon atoms SA1, and the silicon substrate 100 may include a plurality of second silicon atoms SA2.

[0115] In an embodiment, the first silicon atoms SA1 may be arranged in a first arrangement direction D1 and in a second arrangement direction D2 that intersects or crosses the first arrangement direction D1. The first arrangement direction D1 and the second arrangement direction D2 may intersect or cross each other to form any suitable angle. For example, the first arrangement direction D1 and the second arrangement direction D2 may form an acute angle, a right angle, or an obtuse angle. In the following description, the case where the first arrangement direction D1 and the second arrangement direction D2 form a right angle is described in more detail.

[0116] In one embodiment, the second silicon atoms SA2 may be arranged in a first arrangement direction D1 and in a third arrangement direction D3 that intersects or crosses the first arrangement direction D1 and the second arrangement direction D2. Therefore, the arrangement directions of the first silicon atoms SA1 and the second silicon atoms SA2 may be different from each other. In other words, interface defects may be generated in the second surface S2 of the silicon substrate 100. Interface defects may be defined as two-dimensional interfaces used to separate two parts of materials with different crystal structures and different crystal orientations.

[0117] Figure 5C For comparison examples Figure 4 A magnified view of part A, used to compare with Figure 5A and Figure 5B The implementation methods are compared.

[0118] refer to Figure 5C In a comparative example, the mask kit may include a silicon substrate 100-1. However, in this case, the mask kit may not include a support substrate. The silicon substrate 100-1 may include silicon atoms SA. The silicon atoms SA may be arranged in a first arrangement direction D1 and a second arrangement direction D2.

[0119] Unlike one or more embodiments according to this disclosure, when the silicon substrate 100-1 is not directly connected to the supporting substrate, silicon atoms can be arranged regularly. In other words, the silicon atoms SA included in the silicon substrate 100-1 can be less than... Figure 5A The misalignment is as described in the text. Alternatively, the silicon atoms SA included in the silicon substrate 100-1 may not be generated as described in the text. Figure 5B The interface defects explained herein. In one or more embodiments of this disclosure, because the silicon substrate 100 and the support substrate 200 are directly connected to each other, therefore, as Figure 5A The silicon atom SA explained in the text can be dislocated, and / or as... Figure 5B The interface defects explained in the text can be generated.

[0120] Figure 6 This is a cross-sectional view of a mask kit 1500-1 according to another embodiment. Figure 6 In, because of Figure 4 The same reference numerals in the accompanying drawings denote the same elements, and therefore, their redundant descriptions are not repeated.

[0121] refer to Figure 6 The mask kit 1500-1 may include a silicon substrate 100, a support substrate 200, a mask sheet 300, a mask frame 400, an adhesive member 500, and an intermediate adhesive member 600. According to... Figure 6 The mask kit 1500-1 according to the implementation method and the method based on Figure 4 The mask kit 1500 of the implementation method differs in that the former includes an intermediate adhesive member 600.

[0122] In one embodiment, the support substrate 200 may include silicon. For example, the support substrate 200 may include silicon crystals. In another embodiment, the support substrate 200 may include glass.

[0123] An intermediate adhesive member 600 may be disposed between the silicon substrate 100 and the support substrate 200. The intermediate adhesive member 600 may bond the silicon substrate 100 and the support substrate 200. In one embodiment, the intermediate adhesive member 600 may include an adhesive metal. The intermediate adhesive member 600 may include a material that does not generate degassing. For example, the intermediate adhesive member 600 may include In. Optionally, the intermediate adhesive member 600 may include an In composite. In another embodiment, the intermediate adhesive member 600 may include a resin and / or an epoxy resin, etc.

[0124] Figure 7 This is a schematic plan view of a mask kit 1500-2 according to another embodiment. Figure 8 For along Figure 7 The line VIII-VIII' intercepted Figure 7 The image shows a cross-sectional view of the mask kit 1500-2. Figure 7 and Figure 8 In, because of Figure 3 and Figure 4 The same reference numerals in the accompanying drawings denote the same elements, and therefore, their redundant descriptions are not repeated.

[0125] refer to Figure 7 and Figure 8 The mask kit 1500-2 may include a silicon substrate 100, a support substrate 200, a mask sheet 300, a mask frame 400, and an adhesive member 500.

[0126] The silicon substrate 100 may include a first opening portion OP1. The first opening portion OP1 may penetrate a first surface S1 and a second surface S2. In one or more embodiments, the first opening portion OP1 may extend through the silicon substrate 100.

[0127] The first opening portion OP1 may have a tapered shape. The silicon substrate 100 may include a plurality of first opening portions OP1.

[0128] The support substrate 200 may include a second opening OP2. The second opening OP2 may penetrate both the upper and lower surfaces of the support substrate 200. For example, the second opening OP2 may extend through the support substrate 200. In this embodiment, the support substrate 200 may include the second opening OP2. In other words, the support substrate 200, as a single support substrate, may include the second opening OP2. The second openings OP2 may be configured to be separate or spaced apart from each other.

[0129] In one embodiment, the second opening portion OP2 may be connected to the first opening portion OP1. The second opening portion OP2, as a single opening portion, may be configured to overlap with the first opening portion OP1. Therefore, the second opening portion OP2, as a single opening portion, may be connected to the first opening portion OP1.

[0130] The mask sheet 300 may include a mask opening portion 300OP. The mask opening portion 300OP may penetrate the upper surface US and the lower surface LS of the mask sheet 300. For example, the mask opening portion 300OP may extend through the mask sheet 300.

[0131] In this embodiment, the mask opening portion 300OP can be connected to the second opening portion OP2. In other words, the mask opening portion 300OP, as a single mask opening portion, can be connected to the second opening portion OP2.

[0132] Figures 9A to 9J This is a cross-sectional view of a method for manufacturing a mask kit according to an embodiment.

[0133] refer to Figure 9AA mask substrate MS can be fabricated. The mask substrate MS can be a silicon-on-insulator (SOI) wafer. In an embodiment, the mask substrate MS may include a first layer 100A, a second layer 100B, and a third layer 100C. The first layer 100A may be part of a silicon substrate that will serve as a mask assembly. The first layer 100A, the second layer 100B, and the third layer 100C may be stacked (e.g., sequentially stacked). The first layer 100A and the third layer 100C may include silicon. In an embodiment, the first layer 100A and the third layer 100C may include silicon crystals. For example, the first layer 100A and the third layer 100C may include a plurality of silicon atoms. The second layer 100B may include silicon oxide (e.g., SiO2).

[0134] A first opening may be formed in the first layer 100A. In one or more embodiments, a photoresist layer PR may be formed on the first layer 100A. The photoresist layer PR may be either positive or negative and is formed on the first layer 100A. In a positive photoresist layer, the exposed area is etched later in a development process, and in a negative photoresist layer, the area other than the exposed area is etched. The case where the photoresist layer PR is positive is described in more detail in the following description.

[0135] The photoresist layer PR can be formed by applying the photoresist solution to the first layer 100A using various suitable methods, such as spin coating, spraying and / or dipping.

[0136] In addition, before applying the photoresist layer PR to the upper surface of the first layer 100A, a polishing process can be performed on the upper surface of the first layer 100A (on which the photoresist layer PR is to be applied).

[0137] Next, the photoresist layer PR can be exposed. At least a portion of the photoresist layer PR can be exposed. For example, when using a photomask, the area of ​​the photoresist layer PR that overlaps with the opening portion of the photomask can be exposed.

[0138] Next, a portion of the photoresist layer PR can be removed by a developing process. Therefore, a photoresist layer opening portion PROP can be formed on the photoresist layer PR. The photoresist layer opening portion PROP can overlap with the area of ​​the first layer 100A that forms the first opening portion.

[0139] Next, the first layer 100A can be etched using the photoresist layer PR as a mask. The etching can be dry etching. Dry etching can be performed in the photoresist layer opening portion PROP in the direction toward the first layer 100A. In other words, during the dry etching process, a portion of the first layer 100A at the photoresist layer opening portion PROP, or a portion of the first layer 100A exposed by the photoresist layer opening portion PROP, can be etched.

[0140] refer to Figure 9B The first layer 100A may include a first surface S1 and a second surface S2 opposite to the first surface S1. The first surface S1 may be a surface facing the second layer 100B. In this case, because dry etching is performed in the photoresist layer opening portion PROP in the direction toward the first layer 100A, the first width d1 of the first opening portion OP1 in the first surface S1 of the first layer 100A may be formed to be smaller than the second width d2 of the first opening portion OP1 in the second surface S2. Therefore, the first width d1 of the first opening portion OP1 in the first surface S1 of the first layer 100A or at the first surface S1 of the first layer 100A may be smaller than the second width d2 of the first opening portion OP1 in the second surface S2 or at the second surface S2.

[0141] In one embodiment, the width of the first opening portion OP1 may be formed to continuously decrease. For example, the width of the first opening portion OP1 may be formed to continuously decrease from the second surface S2 in the direction toward the first surface S1. In another embodiment, the inner surface of the first opening portion OP1 may include a curved surface. In the following description, the case in which the width of the first opening portion OP1 continuously decreases is described in more detail.

[0142] refer to Figure 9C The photoresist layer PR can be removed. Therefore, the second surface S2 of the first layer 100A can be exposed to the outside.

[0143] refer to Figure 9D and Figure 9E A support substrate 200 including a second opening portion OP2 can be fabricated. The second thickness t2 of the support substrate 200 may be thicker than the first thickness t1 of the first layer 100A. The second opening portion OP2 may penetrate the upper surface and the lower surface of the support substrate 200. For example, the second opening portion OP2 may extend through the support substrate 200.

[0144] The support substrate 200 may be disposed on the first layer 100A. For example, the support substrate 200 may be disposed on the second surface S2 of the first layer 100A. The first opening portion OP1 may be connected to the second opening portion OP2.

[0145] In one embodiment, the support substrate 200 may include the same material as the first layer 100A. For example, the support substrate 200 may include silicon. In another embodiment, the support substrate 200 may include glass.

[0146] The support substrate 200 can be directly connected to the first layer 100A. For example, the support substrate 200 can be directly connected to the second surface S2 of the first layer 100A.

[0147] In an embodiment, when the support substrate 200 includes silicon crystals, similar to the first layer 100A, the support substrate 200 can be directly bonded to or fused to the first layer 100A.

[0148] First, impurities on the surface of each of the support substrate 200 and the first layer 100A can be removed. In this embodiment, the support substrate 200 and the first layer 100A can be dry-cleaned. For example, plasma treatment, ultraviolet / ozone cleaning, and / or wet chemical cleaning processes can be performed on the support substrate 200 and the first layer 100A.

[0149] Next, the support substrate 200 and the first layer 100A can be aligned with each other, and the support substrate 200 and the first layer 100A can be bonded together. For example, the lower surface of the support substrate 200 facing each other and the second surface S2 of the first layer 100A can be bonded together. At room temperature, a considerable portion of the silanol (Si-OH) groups can polymerize to form Si2O (-Si-O-Si- units) and water molecules (H2O). In an embodiment, when the support substrate 200 and the first layer 100A are directly connected to each other, Si2O can be formed on the second surface S2.

[0150] Next, an annealing process can be performed to increase the bonding strength between the support substrate 200 and the first layer 100A. The annealing process provides a certain amount of heat energy, allowing more silanol (Si-OH) groups to react with each other and form new chemical bonds. As a result, the bonding strength between the support substrate 200 and the first layer 100A can be increased. H2O may diffuse along the second surface S2.

[0151] In another embodiment, when the support substrate 200 includes glass, the support substrate 200 and the first layer 100A may be anodicly bonded to each other.

[0152] First, the support substrate 200 can be disposed on the first layer 100A. The support substrate 200 can be directly disposed on the first layer 100A.

[0153] Next, an electrostatic field can be applied to the first layer 100A and the support substrate 200. For example, electrodes can be connected to each of the first layer 100A and the support substrate 200. The electrostatic field can be applied to the first layer 100A and the support substrate 200 at a temperature of about 200°C to about 500°C (e.g., 200°C to 500°C). In this case, in the embodiment, Si2O can be formed on the second surface S2.

[0154] Next, the first layer 100A and the support substrate 200 can be cooled. Therefore, the first layer 100A and the support substrate 200 can be directly connected to each other through an anodizing process.

[0155] refer to Figure 9F In one embodiment, a silicon oxide film OF can be formed on the mask substrate MS and the support substrate 200. For example, the silicon oxide film OF can be formed on the surfaces of the first layer 100A, the third layer 100C, and the support substrate 200. In another embodiment, the silicon oxide film OF can be formed during a thermal oxidation process.

[0156] The silicon oxide film OF prevents or substantially prevents the mask substrate MS or support substrate 200 from being etched in a wet etching process. The silicon oxide film OF may include SiO2. The silicon oxide film OF may include the same material as the second layer 100B.

[0157] In this embodiment, when only a dry etching process is performed in the process of forming the mask kit, the process of forming the silicon oxide film OF can be omitted. The following description details the case in which the silicon oxide film OF is formed on the surfaces of the mask substrate MS and the support substrate 200.

[0158] refer to Figure 9F , Figure 9G and Figure 9H The third layer 100C can be removed. In this embodiment, the third layer 100C can be polished. This can reduce the thickness of the third layer 100C. Furthermore, a portion of the silicon oxide film OF formed on the third layer 100C can be removed. In this embodiment, the polishing process can be a chemical mechanical polishing (CMP) process.

[0159] At least a portion of the third layer 100C may be exposed. For example, at least a portion of the silicon oxide film OF formed on the third layer 100C may be exposed because a portion of it has been removed. For example, the third layer 100C may include an upper surface 100CSA of the third layer 100C facing the first surface S1 of the first layer 100A. Furthermore, the third layer 100C may include a lower surface 100CSB of the third layer 100C opposite to the upper surface 100CSA. The lower surface 100CSB of the third layer 100C may be exposed to the outside.

[0160] In one embodiment, the third layer 100C can be removed by a wet etching process. The lower surface 100CSB of the third layer 100C may not be covered by the silicon oxide film OF and may be exposed to the outside. Therefore, the third layer 100C can be removed by a wet etching process. Because the first layer 100A and the support substrate 200 are covered by the silicon oxide film OF, wet etching of the first layer 100A and the support substrate 200 can be prevented or substantially prevented. In another embodiment, the third layer 100C can be removed by a dry etching process.

[0161] refer to Figure 9H and Figure 9I The second layer 100B can be removed. In one embodiment, the silicon oxide film OF can also be removed when the second layer 100B is removed. Because both the second layer 100B and the silicon oxide film OF contain SiO2, the second layer 100B and the silicon oxide film OF can be removed simultaneously (e.g., concurrently) in the same process. Therefore, the time for manufacturing the mask kit can be reduced. In another embodiment, the silicon oxide film OF can be removed after the second layer 100B is removed. In another embodiment, the second layer 100B can be removed after the silicon oxide film OF is removed.

[0162] The silicon substrate 100 and support substrate 200 of the mask kit can be manufactured using the above process. The first layer 100A of the mask substrate can be the silicon substrate 100 of the mask kit.

[0163] refer to Figure 9J A mask sheet 300 with a mask opening portion 300OP can be disposed on a support substrate 200. The support substrate 200 can be disposed between the silicon substrate 100 and the mask sheet 300.

[0164] The mask 300 may include an upper surface US and a lower surface LS opposite to the upper surface US. The upper surface US of the mask 300 may be configured to face the second surface S2 of the first layer 100A. In addition, the upper surface US of the mask 300 may be configured to face the support substrate 200.

[0165] In one or more embodiments, the support substrate 200 and the mask sheet 300 may be bonded together by adhesive members.

[0166] The mask frame 400 may be disposed below the mask sheet 300. In other words, the mask sheet 300 may be disposed on the mask frame 400. The mask sheet 300 may be disposed between the support substrate 200 and the mask frame 400. The mask sheet 300 may be fixed to the mask frame 400 by welding, and the mask sheet 300 may be in a stretched state.

[0167] The second thickness t2 of the support substrate 200 can be greater than the first thickness t1 of the silicon substrate 100. During the manufacture of the mask kit 1500, the silicon substrate 100 may be damaged when a robotic arm or the like directly contacts and transfers it. During the manufacture of the mask kit 1500, damage to the silicon substrate 100 can be prevented when a robotic arm or the like directly contacts and transfers the support substrate 200, which is thicker than the silicon substrate 100. Therefore, since damage to the silicon substrate 100 is prevented by using the support substrate 200, the mask kit 1500 can be manufactured.

[0168] Figure 10 This is a cross-sectional view of a method for manufacturing a mask kit according to another embodiment. Figure 10 In, because of Figure 9D The same reference numerals in the accompanying drawings denote the same elements, and therefore, their redundant descriptions are not repeated.

[0169] refer to Figure 10 The support substrate 200, including the second opening portion OP2, can be disposed on the first layer 100A. The support substrate 200 can be bonded to the first layer 100A using an intermediate adhesive member 600.

[0170] In one embodiment, the intermediate adhesive member 600 may first be bonded to the support substrate 200. Next, the intermediate adhesive member 600 may be bonded to the first layer 100A. Therefore, the first layer 100A and the support substrate 200 may be connected to each other via the intermediate adhesive member 600. In another embodiment, the intermediate adhesive member 600 may first be bonded to the first layer 100A. Next, the intermediate adhesive member 600 may be bonded to the support substrate 200. Therefore, the first layer 100A and the support substrate 200 may be connected to each other via the intermediate adhesive member 600. In yet another embodiment, after the intermediate adhesive member 600 is bonded to each of the first layer 100A and the support substrate 200, the first layer 100A and the support substrate 200 may be connected to each other via the intermediate adhesive member 600.

[0171] Return to reference Figure 1 The apparatus 1000 for manufacturing a display device can be used to manufacture a display device as described in more detail below. In one or more embodiments, when the pressure control unit 1800 brings the inside of the chamber 1100 (e.g., the pressure inside the chamber) to a state that is the same as or similar to atmospheric pressure, the gate valve operates to open the opening portion of the chamber 1100.

[0172] Then, the display substrate D can be loaded into the chamber 1100 from the outside through the opening of the chamber 1100. The display substrate D can be a display device under manufacture. Various suitable methods can be used to load the display substrate D into the chamber 1100. In one embodiment, the display substrate D can be loaded into the chamber 1100 from the outside by a robotic arm or the like provided on the outside of the chamber 1100. In another embodiment, when the substrate support 1200 is provided in the form of a shuttle, the substrate support 1200 can be transported from the inside of the chamber 1100 to the outside of the chamber 1100. Next, the display substrate D can be placed on the substrate support 1200 by a separate robotic arm or the like provided on the outside of the chamber 1100, and the substrate support 1200 can be loaded from the outside of the chamber 1100 to the inside of the chamber 1100.

[0173] In one embodiment, the mask kit 1500 may be disposed within the chamber 1100. In another embodiment, similar to the display substrate D, the mask kit 1500 may be loaded into the chamber 1100 from the outside. In this case, the mask kit 1500 may be disposed within the chamber 1100 to face the source unit 1400 for supplying deposited material.

[0174] When the display substrate D is loaded into the chamber 1100, it can be placed on the substrate support 1200. In this case, the display substrate D can be positioned relative to the mask assembly 1500 on the side opposite to the source unit 1400. In other words, when the display substrate D is placed on the substrate support 1200, the mask assembly 1500 can be positioned between the display substrate D and the source unit 1400. The vision unit 1700 can capture the positions of the display substrate D and the mask assembly 1500. The mask support 1300 can adjust (e.g., fine-tune) the position of the mask assembly 1500 based on the positions of the display substrate D and the mask assembly 1500 as identified by the vision unit 1700.

[0175] Next, by using the electromagnetic unit 1600, the mask kit 1500 can approach the display substrate D.

[0176] Next, as the source unit 1400 operates, deposition material can be supplied to one side of the mask kit 1500. The deposition material can pass through the mask kit 1500 to be deposited on the display substrate D. For example, the deposition material can pass through the opening area OA of the mask frame 400, the mask opening portion 300OP of the mask sheet 300, the second opening portion OP2 of the support substrate 200, and the first opening portion OP1 of the silicon substrate 100, and can be deposited on the display substrate D. The pump 1820 can draw gas from the chamber 1100 and discharge the gas to the outside, so that the pressure in the chamber 1100 can be maintained at the same or similar state as a vacuum.

[0177] The aforementioned mask kit 1500 may include a silicon substrate 100 and a support substrate 200. The first opening portion OP1 of the silicon substrate 100 may have a tapered shape. Therefore, the apparatus 1000 for manufacturing a display device can precisely control the deposition position of the deposited material on the display substrate D, and thus can manufacture a display device with high resolution.

[0178] The display device manufactured using the aforementioned equipment 1000 is described in more detail below.

[0179] A display device is a means for displaying images and can be a mobile device, such as a gaming device, a multimedia device, or a miniature PC. Display devices may include liquid crystal displays, electrophoretic displays, organic light-emitting displays, inorganic EL displays, field emission displays, surface conduction electron emission displays, quantum dot displays, plasma displays, and / or cathode ray displays, etc. In the following description, although organic light-emitting display devices are described as examples of display devices according to embodiments, various suitable types of display devices as described above can be used according to one or more embodiments of this disclosure.

[0180] Figure 11 This is a schematic cross-sectional view of a display device manufactured using equipment for manufacturing a display device, according to an embodiment.

[0181] refer to Figure 11 The display device 1 may include a substrate 10, a display layer DL, and a thin-film encapsulation layer TFE. The display layer DL and the thin-film encapsulation layer TFE may be disposed (e.g., sequentially disposed) on the substrate 10. The display layer DL may include a pixel circuit layer PCL and a display element layer DEL.

[0182] The substrate 10 may include glass or polymer resin, such as polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate and / or cellulose acetate propionate, etc.

[0183] An isolation layer may be further provided between the display layer DL and the substrate 10. The isolation layer prevents or substantially prevents the intrusion of external materials and may include inorganic materials such as silicon nitride (SiN). X ) and / or a single layer or multiple layers of SiO2.

[0184] The pixel circuit layer PCL may be disposed on the substrate 10. The pixel circuit layer PCL may include a thin film transistor (TFT), and a buffer layer 11, a first gate insulating layer 13a, a second gate insulating layer 13b, a sandwich insulating layer 15, and a planarization insulating layer 17 disposed above and / or below the constituent elements of the thin film transistor TFT.

[0185] The buffer layer 11 may be disposed on the substrate 10. The buffer layer 11 may include an inorganic insulating material, such as SiN. X Silicon oxynitride (SiON) and / or SiO2, and may be a single layer or multiple layers including the above-mentioned inorganic insulating materials.

[0186] The thin-film transistor (TFT) may include a semiconductor layer 12, a gate electrode 14, a source electrode 16a, and a drain electrode 16b. The semiconductor layer 12 may include polycrystalline silicon. Optionally, the semiconductor layer 12 may include amorphous silicon, oxide semiconductor, and / or organic semiconductor, etc. The semiconductor layer 12 may include a channel region 12c and a source region 12a and a drain region 12b disposed on corresponding sides of the channel region 12c.

[0187] The gate electrode 14 may overlap with the channel region 12c. The gate electrode 14 may include a metallic material (e.g., a low-resistance metallic material). The gate electrode 14 may include a conductive material comprising molybdenum (Mo), aluminum (Al), copper (Cu), and / or titanium (Ti), and may be a multilayer or a single layer comprising the aforementioned materials.

[0188] The first gate insulating layer 13a between the semiconductor layer 12 and the gate electrode 14 may include an inorganic insulating material, such as SiO2 or SiN. X Silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2) and / or zinc oxide (ZnO), etc.

[0189] The second gate insulating layer 13b may cover the gate electrode 14. Similar to the first gate insulating layer 13a, the second gate insulating layer 13b may include inorganic insulating materials, such as SiO2 or SiN. X Ingredients such as SiON, Al2O3, TiO2, Ta2O5, HfO2, and / or ZnO.

[0190] The upper electrode Cst2 of the storage capacitor Cst can be disposed on the second gate insulating layer 13b. The upper electrode Cst2 can overlap with the gate electrode 14 below it. The overlapping gate electrode 14 and the upper electrode Cst2 (with the second gate insulating layer 13b between the gate electrode 14 and the upper electrode Cst2) can form the storage capacitor Cst. In other words, the gate electrode 14 can be used as the lower electrode Cst1 of the storage capacitor Cst.

[0191] Thus, the storage capacitor Cst and the thin-film transistor TFT can overlap each other. In some embodiments, the storage capacitor Cst may not overlap with the thin-film transistor TFT.

[0192] The upper electrode Cst2 may include Al, platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), Mo, Ti, tungsten (W) and / or Cu, and may be a single layer or multiple layers of the above materials.

[0193] The interlayer insulating layer 15 may cover the upper electrode Cst2. The interlayer insulating layer 15 may include SiO2, SiN X Inorganic materials such as SiON, Al2O3, TiO2, Ta2O5, HfO2, and / or ZnO are used. The interlayer insulation layer 15 may be a single layer or multiple layers comprising the above-mentioned inorganic insulating materials.

[0194] The source electrode 16a and drain electrode 16b may each be located on the interlayer insulating layer 15. The source electrode 16a and drain electrode 16b may comprise a highly conductive material. The source electrode 16a and drain electrode 16b may comprise a conductive material including Mo, Al, Cu, and / or Ti, and may be a multilayer or a single layer comprising the aforementioned materials. In an embodiment, the source electrode 16a and drain electrode 16b may have a Ti / Al / Ti multilayer structure.

[0195] The planarization insulation layer 17 may include an organic insulation layer. The planarization insulation layer 17 may include an organic insulating material, for example, one or more selected from general polymers (such as polymethyl methacrylate (PMMA) and / or polystyrene (PS)), polymer derivatives having phenol groups, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluoropolymers, p-xylene polymers, vinyl alcohol polymers, and blends thereof.

[0196] The display element layer DEL can be disposed on the pixel circuit layer PCL. The display element layer DEL may include an organic light-emitting diode (OLED), and the pixel electrode 21 of the OLED may be electrically connected to a thin-film transistor (TFT) through a contact hole in the planarized insulating layer 17.

[0197] Organic light-emitting diodes (OLEDs) can emit, for example, red, green, or blue light, or, in another embodiment, red, green, blue, or white light.

[0198] The pixel electrode 21 may include conductive oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In₂O₃), indium gallium oxide (IGO), and / or zinc aluminum oxide (AZO). In another embodiment, the pixel electrode 21 may include a reflective film, which includes Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or compounds thereof. In another embodiment, the pixel electrode 21 may further include a film formed on or under the aforementioned reflective film by ITO, IZO, ZnO, or In₂O₃.

[0199] A pixel defining layer 19 having an opening 19OP exposing the central portion of the pixel electrode 21 may be disposed on the pixel electrode 21. The pixel defining layer 19 may include an organic insulating material and / or an inorganic insulating material. The opening 19OP may define an emission region for light emitted by an organic light-emitting diode (OLED). For example, the width of the opening 19OP may be the width of the emission region. The width of the emission region may be defined as the width of a sub-pixel PX provided in the display device 1.

[0200] The emitting layer 22 may be disposed in the opening 19OP of the pixel defining layer 19. The emitting layer 22 may comprise a polymer or low-molecular-weight organic material that emits light of a certain color. The emitting layer 22 may be formed using an apparatus 1000 for manufacturing a display device. In other words, the apparatus 1000 for manufacturing a display device may deposit a deposition material to form the emitting layer 22 in the opening 19OP of the pixel defining layer 19.

[0201] In one or more embodiments, a first functional layer and a second functional layer may be disposed above and below the emitter layer 22. The first functional layer may include, for example, a hole transport layer (HTL) and a hole injection layer (HIL). The second functional layer may be optional components disposed on the emitter layer 22. The second functional layer may include an electron transport layer (ETL) and / or an electron injection layer (EIL). The first functional layer and / or the second functional layer may be a common layer formed to completely cover the substrate 10, similar to the common electrode 23 described in more detail below.

[0202] The common electrode 23 may include a conductive material with low work function. For example, the common electrode 23 may include a (semi-)transparent layer, which may include Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, lithium (Li), Ca, and / or alloys thereof. Optionally, the common electrode 23 may further include a layer of, for example, ITO, IZO, ZnO, or In2O3 on the (semi-)transparent layer comprising the above-mentioned materials.

[0203] In one embodiment, the thin-film encapsulation layer TFE may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In another embodiment, Figure 11The thin-film encapsulation layer TFE is explained to include a first inorganic encapsulation layer 31, an organic encapsulation layer 32, and a second inorganic encapsulation layer 33 stacked in sequence.

[0204] The first inorganic encapsulation layer 31 and the second inorganic encapsulation layer 33 may include Al2O3, TiO2, Ta2O5, HfO2, ZnO, SiO2, and SiN. X The organic encapsulation layer 32 may include one or more inorganic materials, such as SiON. The organic encapsulation layer 32 may include polymeric materials. These polymeric materials may include acrylic resins, epoxy resins, polyimides, and / or polyethylene, etc. In some embodiments, the organic encapsulation layer 32 may include acrylates.

[0205] In another embodiment, the thin-film encapsulation layer TFE may have a structure in which the substrate 10 and the upper substrate, which serves as a transparent member, are coupled by a sealing member, and the internal space between the substrate 10 and the upper substrate is sealed. A desiccant and / or filler may be located within the internal space. The sealing member may be a sealant, and in another embodiment, the sealing member may comprise a material cured by laser. For example, the sealing member may be a molten material. In one or more embodiments, the sealing member may comprise an organic sealant, such as a polyurethane resin, an epoxy resin, or an acrylic resin, or an inorganic sealant, such as a polysiloxane. For example, polyurethane acrylates may be used as polyurethane resins. For example, butyl acrylate and / or ethylhexyl acrylate may be used as acrylic resins. The sealing member may comprise a material cured by heat.

[0206] A touch electrode layer, including touch electrodes, is disposed on a thin-film encapsulation layer (TFE), and an optical functional layer may be disposed on the touch electrode layer. The touch electrode layer can obtain coordinate information based on external input (e.g., a touch event). The optical functional layer can reduce the reflectivity of external light input to the display device 1 and / or increase the color purity of light emitted from the display device 1. In an embodiment, the optical functional layer may include a retarder and a polarizer. The retarder may be a film-type or a liquid crystal coating-type, and may include a λ / 2 retarder and / or a λ / 4 retarder. The polarizer may also be a film-type or a liquid crystal coating-type. The film-type (or film) may include a stretchable synthetic resin film, and the liquid crystal coating-type (or coating) may include liquid crystals arranged in a set or a certain arrangement. The retarder and polarizer may further include a protective film.

[0207] In another embodiment, the optical functional layer may include a black matrix and color filters. Color filters may be arranged considering the color of light emitted from each of the sub-pixels PX of the display device 1. In one or more embodiments, color filters may be arranged to overlap with the sub-pixels PX of the display device 1. Each of the color filters may include a red, green, or blue pigment or dye. Optionally, in addition to the aforementioned pigments or dyes, each of the color filters may further include quantum dots. Optionally, some color filters may not include the aforementioned pigments or dyes and may include scattering particles, such as titanium dioxide.

[0208] In another embodiment, the optical functional layer may include a destructive interference structure. The destructive interference structure may include a first reflective layer and a second reflective layer disposed on different layers. First reflected light and second reflected light reflected from the first reflective layer and the second reflective layer, respectively, can destructively interfere with each other, and thus reduce the reflectivity of external light.

[0209] An adhesive component may be disposed between the touch electrode layer and the optical functional layer. Generally, any suitable adhesive component may be disposed between the touch electrode layer and the optical functional layer. For example, the adhesive component may be a pressure-sensitive adhesive (PSA).

[0210] As described above, according to one or more embodiments of this disclosure, because the mask kit includes a silicon substrate and a support substrate, it can provide an apparatus for manufacturing a display device with enhanced reliability and improved deposition efficiency.

[0211] Furthermore, according to one or more embodiments of this disclosure, since the support substrate is disposed on the first layer, an apparatus for manufacturing a display device with enhanced reliability and improved deposition efficiency can be provided.

[0212] Furthermore, according to one or more embodiments of this disclosure, because the mask kit includes a silicon substrate and a support substrate, it can provide an apparatus for manufacturing a display device with improved deposition efficiency.

[0213] It should be understood that the embodiments described herein are to be considered merely descriptive and not for limiting purposes. The description of features or aspects in each embodiment should generally be considered as other similar features or aspects that may be used in other embodiments. Although one or more embodiments have been described with reference to the figures, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the appended claims and their equivalents.

Claims

1. An apparatus for manufacturing a display device, the apparatus comprising: Mask kit, the mask kit comprising: A silicon substrate, the silicon substrate including a first surface, a second surface opposite to the first surface, and a first opening penetrating the first surface and the second surface; and A support substrate on the second surface, the support substrate including a second opening portion connected to the first opening portion. The width of the first opening portion on the first surface is smaller than the width of the first opening portion on the second surface. The supporting substrate is directly connected to the second surface of the silicon substrate, and no adhesive member is provided between the supporting substrate and the silicon substrate.

2. The device according to claim 1, wherein the thickness of the supporting substrate is greater than the thickness of the silicon substrate.

3. The device of claim 1, wherein each of the silicon substrate and the supporting substrate comprises a plurality of silicon atoms arranged in a first arrangement direction and a second arrangement direction, the second arrangement direction intersecting the first arrangement direction. The outermost first outer silicon atom among the plurality of silicon atoms in the silicon substrate and the outermost second outer silicon atom among the plurality of silicon atoms in the supporting substrate are adjacent to each other, and the second surface lies between the first outer silicon atom and the second outer silicon atom. The third arrangement direction from the center of the first outer silicon atom to the center of the second outer silicon atom intersects the first arrangement direction and the second arrangement direction.

4. The device of claim 1, wherein the supporting substrate comprises a plurality of first silicon atoms arranged in a first arrangement direction and a second arrangement direction, the second arrangement direction intersecting the first arrangement direction, and The silicon substrate includes a plurality of second silicon atoms arranged in a first arrangement direction and a third arrangement direction, the third arrangement direction intersecting the first arrangement direction and the second arrangement direction.

5. The device according to claim 1, wherein the second surface comprises a unit of -Si-O-Si-.

6. The device of claim 1, wherein the mask kit further comprises: Mask frame with opening area; and A mask sheet on the mask frame, the mask sheet including an upper surface, a lower surface opposite to the upper surface, and a mask opening portion penetrating the upper surface and the lower surface. The supporting substrate is located on the mask sheet, and The second surface of the silicon substrate faces the upper surface of the mask.

7. The apparatus of claim 6, wherein one of the mask and the support substrate includes a concave portion facing the other of the mask and the support substrate. The device further includes an adhesive member in the concave portion.

8. The device according to claim 1, further comprising: The chamber containing the mask kit; and The source unit in the chamber, the source unit being configured to supply deposition material. The second surface of the silicon substrate faces the source unit.

9. A method of manufacturing a mask kit, the method comprising: Fabrication of a mask substrate comprising a first layer, a second layer, and a third layer; A first opening is formed in the first layer; A support substrate is disposed on the first layer, the support substrate having a second opening portion connected to the first opening portion; A silicon oxide film is formed on the surfaces of the mask substrate and the support substrate; Remove the third layer; and Simultaneously remove the second layer and the silicon oxide film.

10. The method of claim 9, wherein each of the first layer and the third layer comprises silicon, and The second layer comprises silicon oxide.

11. The method of claim 9, wherein the formation of the first opening portion comprises: Dry etching of the first layer; and The first opening is formed at a first surface of the first layer and at a second surface opposite to the first surface, wherein the width of the first opening at the first surface is smaller than the width of the first opening at the second surface. The first surface is the surface facing the second layer.

12. The method of claim 9, wherein the arrangement of the support substrate includes directly connecting the first layer to the support substrate.

13. The method of claim 9, wherein a plurality of first opening portions are formed in the first layer, the plurality of first opening portions including the first opening portions, and The arrangement of the support substrate includes connecting the second opening portion to the plurality of first opening portions.

14. The method of claim 9, wherein the removal of the third layer comprises: Polish the third layer; and The third layer is etched using either wet or dry etching.

15. The method of claim 9, wherein the arrangement of the support substrate includes bonding the support substrate to the first layer using an intermediate adhesive member.

16. The method of claim 9, further comprising arranging a mask sheet having a mask opening portion and a mask frame having an opening region on the support substrate. The first layer includes a first surface facing the second layer and a second surface opposite to the first surface, and The second surface of the first layer faces the mask.

17. A method of manufacturing a display device, the method comprising: A display substrate is arranged in the chamber; The deposition material is supplied using the source unit in the chamber; and The deposition material is deposited on the display substrate by passing it through a mask kit facing the source cell. The mask kit mentioned above includes: A silicon substrate, the silicon substrate including a first surface, a second surface opposite to the first surface, and a first opening portion penetrating the first surface and the second surface; and A support substrate on the second surface, the support substrate including a second opening portion connected to the first opening portion, and The first surface faces the display substrate. The second surface faces the source unit. The width of the first opening portion on the first surface is smaller than the width of the first opening portion on the second surface, and The supporting substrate is directly connected to the second surface of the silicon substrate, and no adhesive member is provided between the supporting substrate and the silicon substrate.

18. The method of claim 17, wherein the thickness of the supporting substrate is greater than the thickness of the silicon substrate.

19. The method of claim 17, wherein each of the silicon substrate and the supporting substrate comprises a plurality of silicon atoms arranged in a first arrangement direction and a second arrangement direction, the second arrangement direction intersecting the first arrangement direction. The outermost first outer silicon atom among the plurality of silicon atoms in the silicon substrate and the outermost second outer silicon atom among the plurality of silicon atoms in the supporting substrate are adjacent to each other, and the second surface lies between the first outer silicon atom and the second outer silicon atom. The third arrangement direction from the center of the first outer silicon atom to the center of the second outer silicon atom intersects the first arrangement direction and the second arrangement direction.

20. The method of claim 17, wherein the supporting substrate comprises a plurality of first silicon atoms arranged in a first arrangement direction and a second arrangement direction, the second arrangement direction intersecting the first arrangement direction, and The silicon substrate includes a plurality of second silicon atoms arranged in a first arrangement direction and a third arrangement direction, the third arrangement direction intersecting the first arrangement direction and the second arrangement direction.

21. The method of claim 17, wherein the second surface comprises units of the -Si-O-Si- portion.

22. The method of claim 17, wherein the plurality of first opening portions include the first opening portion, and The second opening portion is connected to the plurality of first opening portions.

23. The method of claim 17, wherein the mask kit further comprises: Mask frame with opening area; and A mask sheet on the mask frame, the mask sheet including an upper surface, a lower surface opposite to the upper surface, and a mask opening portion penetrating the upper surface and the lower surface. The supporting substrate is located on the mask sheet, and The second surface of the silicon substrate faces the upper surface of the mask.

24. The method of claim 23, wherein one of the mask and the support substrate includes a concave portion facing the other of the mask and the support substrate, and The adhesive component is located in the concave portion.

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