Method of forming a semiconductor structure and semiconductor structure

Abstract

The application provides a semiconductor structure forming method and a semiconductor structure. The semiconductor structure forming method comprises the following steps: providing a semiconductor substrate, wherein the semiconductor substrate comprises at least a discrete conductive layer; forming discrete support structures on the semiconductor substrate, the bottom of the support structure comprises a bottom conductive layer, and the support structures comprise a capacitor opening, and the bottom conductive layer is electrically connected with the conductive layer; forming a lower electrode on the sidewall of the support structure, and the lower electrode is electrically connected with the bottom conductive layer; forming a capacitor dielectric layer covering the top of the support structure, the sidewall of the lower electrode and the bottom of the capacitor opening; and forming an upper electrode covering the capacitor dielectric layer to form a capacitor structure. The application forms a stable support structure to form a stable columnar capacitor, improves the aspect ratio of the formed capacitor structure, and the formed capacitor structure is stable and not easy to collapse, thereby improving the yield of the semiconductor structure.

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