Substrate processing equipment, ion implantation equipment and ion implantation method

Abstract

An apparatus for processing a substrate, comprising: a process chamber for performing a liquid processing process by dispensing a processing liquid onto the substrate; and components disposed in the process chamber. A surface of at least one of the components is formed of a material containing an ion-implanted fluororesin.

Description

Background Art

[0001] Embodiments of the inventive concepts described herein relate to a substrate processing apparatus, an ion implantation apparatus, and an ion implantation method.

[0002] Generally speaking, a liquid treatment process for dispensing a treatment liquid onto a substrate (such as a wafer) is widely used in manufacturing semiconductor elements. The liquid treatment process may include, for example, a coating process for forming a liquid film on a substrate by dispensing a photosensitive liquid onto the substrate, a cleaning process for removing contaminants (e.g., particles, organic contaminants, metal contaminants, etc.) remaining on the substrate by dispensing a cleaning solution onto the substrate, and the like.

[0003] The processing liquid used in the liquid processing process (e.g., acidic or alkaline chemicals, organic solvents (such as IPA, DIW), etc.) has high reactivity. In addition, during the process of processing the substrate, heat is generated due to the friction between the processing liquid and the substrate. Therefore, the components (e.g., bowl or chuck) provided in the substrate processing equipment are formed of fluororesin or engineering plastic materials to withstand the processing liquid and high temperature. The components formed of fluororesin or engineering plastic materials have excellent chemical resistance or heat resistance.

[0004] However, parts formed of fluororesin or engineering plastic materials have a surface resistance of about 1T ohm to about 10T ohm. This surface resistance does not meet the Semiconductor Equipment and Materials International (SEMI) standard. In addition, in the liquid processing process, static electricity is easily generated in the process in which the processing liquid and the substrate are rubbed or in the process in which the processing liquid is scattered from the parts. Parts formed of fluororesin or engineering plastic materials are very susceptible to static electricity. For example, fluororesin, which ranks lowest in the triboelectric series, is easily electrified by static electricity. Since static electricity causes arc discharge or particle adsorption, it is important to prevent static electricity electrification or properly remove static electricity.

[0005] In order to properly remove static electricity, a method of manufacturing components with metal materials can be considered. However, components formed of metal materials are not suitable because of their poor corrosion resistance and heat resistance to the treatment liquid.

[0006] In recent years, a method for manufacturing a component by mixing a conductive polymer with carbon (carbon black, CNT, graphene, graphite, etc.) or polypropylene has been proposed. An example of this method is disclosed in Japanese Patent Publication No. 1999-283914. Japanese Patent Publication No. 1999-283914 discloses a cup-shaped object formed of an antistatic plastic material obtained by mixing a conductive polymer with polypropylene. However, in the case of a component manufactured by mixing a conductive polymer with carbon or polypropylene, an elution phenomenon in which powder comes out of the component is likely to occur. The powder generated by the elution phenomenon may act as a contaminant in the processing of the substrate. Summary of the invention

[0007] Embodiments of the inventive concept provide a substrate processing apparatus for efficiently processing a substrate.

[0008] In addition, embodiments of the inventive concept provide a substrate processing apparatus for minimizing generation of static electricity in a process of processing a substrate.

[0009] Furthermore, embodiments of the inventive concept provide a substrate processing apparatus for effectively removing static electricity generated in the process of processing a substrate.

[0010] Furthermore, embodiments of the present inventive concept provide an ion implantation apparatus and method for manufacturing a component having chemical resistance and heat resistance of a fluororesin or plastic and capable of minimizing the generation of static electricity.

[0011] In addition, embodiments of the present inventive concept provide an ion implantation apparatus and method for manufacturing a component having chemical resistance and heat resistance of a fluororesin or plastic and capable of effectively removing generated static electricity.

[0012] Technical problems to be solved by the inventive concept are not limited to the above-mentioned problems, and any other technical problems not mentioned herein will be clearly understood by those skilled in the art to which the inventive concept pertains from the following description.

[0013] According to one embodiment, an apparatus for processing a substrate includes: a process chamber that performs a liquid processing process by dispensing a processing liquid onto the substrate; and components disposed in the process chamber. A surface of at least one of the components is formed of a material containing an ion-implanted fluororesin.

[0014] According to one embodiment, the apparatus may further include a processing container provided in a vessel shape opened at a top, the processing container having a processing space in which the substrate is processed, and the component may be the processing container.

[0015] According to one embodiment, the processing container may be electrically connected to an elevating unit that moves the processing container in an upward / downward direction and is grounded.

[0016] According to one embodiment, the processing container may include: a sidewall portion, the sidewall portion being coupled to the lifting unit; and an inclined portion, the inclined portion extending from the sidewall portion in an upwardly inclined direction, and an amount of ions injected into a surface of the inclined portion and an amount of ions injected into a surface of the sidewall portion may be different from each other.

[0017] According to one embodiment, the amount of the ions implanted in the surface of the inclined portion may be smaller than the amount of the ions implanted in the surface of the sidewall portion.

[0018] According to one embodiment, the apparatus may further include: a support plate which supports the substrate in the process chamber; and a chuck pin which is mounted on the support plate and holds the substrate, and the component may be the support plate.

[0019] According to one embodiment, the chuck pin may be grounded, and the support plate may be electrically connected to the chuck pin.

[0020] According to one embodiment, an amount of ions implanted in a center region of the support plate and an amount of ions implanted in an edge region of the support plate when viewed from above may be different from each other.

[0021] According to one embodiment, the amount of ions implanted in the central region may be smaller than the amount of ions implanted in the edge region.

[0022] According to one embodiment, the chuck pin may include: a contact portion contacting the substrate; and a ground portion electrically connected to the contact portion and grounded, and resistances of the contact portion and the ground portion may be different from each other.

[0023] According to one embodiment, the resistance of the contact portion may be higher than the resistance of the ground portion.

[0024] According to one embodiment, the apparatus may further include: a support unit that supports the substrate in the process chamber; and a nozzle that dispenses the processing liquid onto the support unit, and the member may be the nozzle.

[0025] According to one embodiment, the nozzle may be grounded, and a discharge channel formed in the nozzle and through which the treatment liquid flows may be subjected to ion implantation.

[0026] According to one embodiment, an apparatus for processing a substrate includes: a processing container having a processing space; a support unit supporting the substrate in the processing space and having a support plate; and a liquid dispensing unit including a nozzle dispensing a processing liquid onto the substrate supported on the support unit. At least one of the processing container, the support plate, or the nozzle is formed of a material containing a fluorine resin or plastic, and a surface of the at least one of the processing container, the support plate, or the nozzle is subjected to ion implantation to have a dissipative property.

[0027] According to one embodiment, the processing container may be electrically connected to a lifting unit that moves the processing container in an upward / downward direction and is grounded, and the surface resistance of the processing container may gradually decrease as approaching an area where the processing container is coupled to the lifting unit.

[0028] According to one embodiment, a surface resistance of a central region of the support plate may be higher than a surface resistance of an edge region of the support plate when viewed from above.

[0029] According to one embodiment, the supporting unit may include a chuck pin mounted on the supporting plate and holding the substrate, and the chuck pin may be grounded and electrically connected to the supporting plate.

[0030] According to one embodiment, the chuck pin may include: a contact portion that contacts the substrate; and a ground portion that is electrically connected to the contact portion and is grounded, and a resistance of the contact portion may be higher than a resistance of the ground portion.

[0031] According to one embodiment, an apparatus for processing a substrate includes: a processing container having a processing space; a supporting unit supporting the substrate in the processing space and having a supporting plate; and a liquid dispensing unit including a nozzle dispensing a processing liquid onto the substrate supported on the supporting unit. The processing container and the supporting plate are formed of a material containing a fluorine resin and are subjected to ion implantation to have a surface resistance of 1M ohm to 1G ohm.

[0032] According to one embodiment, the processing container may be electrically connected to a lifting unit that moves the processing container in an upward / downward direction and is grounded. The processing container may include a sidewall portion coupled to the lifting unit and an inclined portion extending from the sidewall portion in an upwardly inclined direction. The surface resistance of the inclined portion may be higher than the surface resistance of the sidewall portion.

[0033] According to one embodiment, an ion implantation method includes: supporting a component disposed in a process chamber for performing liquid processing on a substrate on a spin chuck; rotating the component in one direction by operating the spin chuck; and emitting an ion beam containing gas or solid ions to the rotating component.

[0034] According to one embodiment, the ion beam may be emitted to the component from a position located off-center to the center of rotation of the component when viewed from above.

[0035] According to one embodiment, the ion beam may be emitted to the component such that an amount of ions implanted in a central region of the component and an amount of ions implanted in an edge region of the component are different from each other when viewed from above.

[0036] According to one embodiment, the member may be one of a process container having a process space, a support plate disposed in the process space, or a nozzle dispensing a process liquid onto the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, in which like reference numerals refer to like parts throughout the various drawings unless otherwise specified, and in which:

[0038] Figure 1 is a plan view illustrating a substrate processing apparatus according to an embodiment of the present inventive concept;

[0039] Figure 2 It is shown Figure 1 A view of a substrate processing device;

[0040] Figure 3 It is shown Figure 2 A cross-sectional view of a chuck pin;

[0041] Figure 4 and Figure 5 is a view showing molecular bond breakage and cross-linking generated when ions are implanted in the surface of a member formed of a fluororesin or a plastic material;

[0042] Figure 6 It is shown Figure 2 a view of a portion of a substrate processing apparatus;

[0043] Figure 7 It is shown that the removal Figure 2 A view of a process for generating static electricity during processing of a substrate in a substrate processing apparatus;

[0044] Figure 8 and Fig. 9 yes Figure 2 A top view of a support plate;

[0045] Fig.10 It is shown Figure 2 A view of the nozzle;

[0046] Fig.11 is a view showing an ion implantation apparatus according to an embodiment of the present inventive concept;

[0047] Fig.12 It is shown Fig.11 A view of a state in which an ion implantation apparatus performs ion implantation on a component;

[0048] Fig.13 is a diagram showing one example of an amount of ions delivered to a component in a radial direction of the component; and

[0049] Fig.14 is a view showing another example of the amount of ions delivered to a component in a radial direction of the component. DETAILED DESCRIPTION

[0050] Hereinafter, the embodiments of the inventive concept will be described in detail with reference to the accompanying drawings so that the inventive concept can be easily implemented by those skilled in the art. However, the inventive concept can be implemented in various different forms and is not limited to the embodiments described herein. In addition, when describing the embodiments of the inventive concept, detailed descriptions related to well-known functions or configurations will be omitted when they may make the subject matter of the inventive concept unnecessarily obscure. In addition, throughout the accompanying drawings, components that perform similar functions and operations are provided with the same reference numerals.

[0051] The term "include / comprise" in this specification is an "open" expression, which simply means that the corresponding components exist, and unless specifically described to the contrary, additional components are not excluded but may be included. Specifically, it should be understood that the terms "include / comprise" and "having" when used in this document specify the presence of stated features, integers, steps, operations, components and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, components, parts and / or groups of the above items.

[0052] Unless otherwise specified, terms in the singular may include plural forms. Furthermore, in the drawings, the shapes and sizes of components may be exaggerated for clear illustration.

[0053] In the following, reference will be made to Figures 1 to 14 Embodiments of the inventive concept are described in detail.

[0054] Figure 1 is a plan view illustrating a substrate processing apparatus according to an embodiment of the inventive concept.

[0055] refer to Figure 1, the substrate processing apparatus 1 includes an indexing module 10 and a process module 20. The indexing module 10 includes a loading port 120 and a transfer frame 140. The loading port 120, the transfer frame 140, and the process module 20 are arranged in a row in sequence. Hereinafter, the direction in which the loading port 120, the transfer frame 140, and the process module 20 are arranged is referred to as a first direction 12, a direction perpendicular to the first direction 12 when viewed from above is referred to as a second direction 14, and a direction perpendicular to a plane including the first direction 12 and the second direction 14 is referred to as a third direction 16.

[0056] The carrier 130 in which the substrate W is received is seated on the load port 120. A plurality of load ports 120 may be provided. The load ports 120 may be arranged in a row along the second direction 14. The number of the load ports 120 may be increased or decreased according to the process efficiency and the occupied area of ​​the process module 20. The carrier 130 has a plurality of slots (not shown) formed therein, in which the substrate W is received in a state of being horizontally disposed relative to the ground. A front opening unified wafer box (FOUP) may be used as the carrier 130.

[0057] The process module 20 includes a buffer unit 220, a transfer chamber 240, and a process chamber 260. The transfer chamber 240 is arranged so that its longitudinal direction is parallel to the first direction 12. The process chamber 260 is arranged on opposite sides of the transfer chamber 240. On the opposite sides of the transfer chamber 240, the process chamber 260 is symmetrically arranged relative to the transfer chamber 240. A plurality of process chambers 260 are arranged on one side of the transfer chamber 240. Some of the process chambers 260 are arranged along the longitudinal direction of the transfer chamber 240. In addition, other process chambers 260 are stacked one on top of another. That is, the process chambers 260 may be arranged in an A×B array on one side of the transfer chamber 240. Here, "A" represents the number of process chambers 260 arranged in rows along the first direction 12, and "B" represents the number of process chambers 260 arranged in columns along the third direction 16. In the case where four or six process chambers 260 are arranged on one side of the transfer chamber 240, the process chambers 260 may be arranged in a 2×2 or 3×2 array. The number of process chambers 260 may be increased or decreased. Alternatively, the process chambers 260 may be provided only on one side of the transfer chamber 240. In another case, the process chambers 260 may be disposed in a single layer on opposite sides of the transfer chamber 240.

[0058] The buffer unit 220 is disposed between the conveying frame 140 and the conveying chamber 240. The buffer unit 220 provides a space where the substrate W stays before being conveyed between the conveying chamber 240 and the conveying frame 140. The buffer unit 220 has a slot (not shown) formed therein, in which the substrate W is received. The slots (not shown) are spaced apart from each other along the third direction 16. The buffer unit 220 is open at one side facing the conveying frame 140 and at the opposite side facing the conveying chamber 240.

[0059] The transfer frame 140 transfers the substrate W between the carrier 130 seated on the loading port 120 and the buffer unit 220. The indexing track 142 and the indexing robot 144 are provided in the transfer frame 140. The indexing track 142 is arranged so that its longitudinal direction is parallel to the second direction 14. The indexing robot 144 is mounted on the indexing track 142 and moves linearly along the indexing track 142 in the second direction 14. The indexing robot 144 includes a base 144a, a main body 144b and an indexing arm 144c. The base 144a can move along the indexing track 142. The main body 144b is coupled to the base 144a. The main body 144b can move on the base 144a along the third direction 16. In addition, the main body 144b can rotate on the base 144a. The indexing arm 144c is coupled to the main body 144b and can move forward and backward relative to the main body 144b. A plurality of indexing arms 144c can be provided. The indexing arms 144c may be driven individually. The indexing arms 144c are stacked one on top of another along the third direction 16 with a spacing gap therebetween. Some of the indexing arms 144c may be used to transfer the substrate W from the process module 20 to the carrier 130, and other indexing arms 144c may be used to transfer the substrate W from the carrier 130 to the process module 20. Therefore, in the process of the indexing robot 144 transferring the substrate W between the carrier 130 and the process module 20, particles generated from the substrate W to be processed may be prevented from adhering to the processed substrate W.

[0060] The transfer chamber 240 transfers the substrate W between the buffer unit 220 and the process chamber 260 and between the process chambers 260. A guide rail 242 and a main robot 244 are provided in the transfer chamber 240. The guide rail 242 is provided so that its longitudinal direction is parallel to the first direction 12. The main robot 244 is mounted on the guide rail 242 and moves linearly on the guide rail 242 along the first direction 12. The main robot 244 includes a base 244a, a main body 244b, and a main arm 244c. The base 244a is movable along the guide rail 242. The main body 244b is coupled to the base 244a. The main body 244b is movable on the base 244a along the third direction 16. In addition, the main body 244b is rotatable on the base 244a. The main arm 244c is coupled to the main body 244b and is movable forward and backward relative to the main body 244b. A plurality of main arms 244c may be provided. The main arms 244c can be driven individually. The main arms 244c are stacked one on top of another along the third direction 16 with a spacing gap therebetween.

[0061] The process chamber 260 may be a chamber for performing a liquid treatment process by dispensing a treatment liquid L onto a substrate W. For example, the process chamber 260 may be equipped with a substrate treatment device 300 for performing a liquid treatment process on a substrate W. The substrate treatment device 300 may have different structures depending on the type of liquid treatment process performed by the substrate treatment device 300. For example, the substrate treatment device 300 may have different structures depending on the type of treatment liquid L dispensed onto the substrate W. Alternatively, the substrate treatment devices 300 in the corresponding process chambers 260 may have the same structure. Alternatively, the process chambers 260 may be divided into a plurality of groups. The substrate treatment devices 300 in the process chambers 260 belonging to the same group may have the same structure, and the substrate treatment devices 300 in the process chambers 260 belonging to different groups may have different structures.

[0062] The substrate processing apparatus 300 may perform a liquid processing process on the substrate W by dispensing the processing liquid L onto the substrate W. In the present embodiment, the liquid processing process of the substrate W may be a cleaning process. However, without being limited thereto, the liquid processing process may be various well-known processes (e.g., a coating process) for processing the substrate W by dispensing the processing liquid L onto the substrate W.

[0063] Figure 2 It is shown Figure 1 View of a substrate processing device. Figure 2 The substrate processing apparatus 300 includes a processing container 320 , a supporting unit 340 , a lifting unit 360 , a lower fluid distributing unit 370 , an upper fluid distributing unit 380 , and a controller 390 .

[0064] The processing container 320 may be disposed in the process chamber 260. The processing container 320 may provide a processing space for processing the substrate W. The processing container 320 may have a vessel shape opened at the top. The processing container 320 may be a bowl-shaped object.

[0065] The processing container 320 may include an inner recovery bowl 322 and an outer recovery bowl 326. The inner recovery bowl 322 and the outer recovery bowl 326 may recover different processing liquids L for each process. When viewed from above, the inner recovery bowl 322 has a ring shape surrounding the support unit 340, and when viewed from above, the outer recovery bowl 326 has a ring shape surrounding the inner recovery bowl 322.

[0066] The inner recycling bowl 322 may have a first inclined portion 322a, a first side wall portion 322b, and a first bottom portion 322c. The first side wall portion 322b may extend vertically from the first bottom portion 322c. For example, the first side wall portion 322b may extend upward from the first bottom portion 322c. In addition, the first inclined portion 322a may extend from the first side wall portion 322b in an upwardly inclined direction toward the support plate 342 to be described below.

[0067] The outer recycling bowl 326 may have a second inclined portion 326a, a second sidewall portion 326b, and a second bottom portion 326c. The second sidewall portion 326b may extend vertically from the second bottom portion 326c. For example, the second sidewall portion 326b may extend upward from the second bottom portion 326c. In addition, the second inclined portion 326a may extend from the second sidewall portion 326b in an upwardly inclined direction toward the support plate 342 to be described below.

[0068] The inner space of the inner recovery bowl 322 and the first inclined portion 322a may form a first inlet 323, through which the treatment liquid L is introduced into the inner recovery bowl 322. The first inclined portion 322a and the second inclined portion 326a may form a second inlet 327, through which the treatment liquid L is introduced into the outer recovery bowl 326. According to one embodiment, the inlets 323 and 327 may be located at different heights. In addition, the recovery lines 324 and 328 are connected to the bottom portions 322c and 326c of the recovery bowls 322 and 326, respectively. The treatment liquid L introduced into the recovery bowls 322 and 326 may be supplied to an external treatment liquid regeneration system (not shown) through the recovery lines 324 and 328 and may be regenerated by the treatment liquid regeneration system.

[0069] The support unit 340 supports the substrate W in the processing space. The support unit 340 supports and rotates the substrate W during the process. The support unit 340 includes a support plate 342, a support pin 344, a chuck pin 346, and a rotation drive member 347 and 348. The support plate 342 has a substantially circular plate shape and has an upper surface and a lower surface. The diameter of the lower surface is smaller than the diameter of the upper surface. The upper surface and the lower surface are positioned so that their central axes are consistent with each other. The support pin 344 and the chuck pin 346 can be mounted on the support plate 342. The support pin 344 and the chuck pin 346 can support the lateral portion and the rear surface of the substrate W respectively. That is, the support plate 342 can support the substrate W via the support pin 344 and the chuck pin 346.

[0070] A plurality of support pins 344 may be provided. The support pins 344 may be disposed on an edge portion of an upper surface of the support plate 342 so as to be spaced apart from each other at a predetermined interval. The support pins 344 may protrude upward from the support plate 342. The support pins 344 may be disposed to form a circular ring shape as a whole by their combination. The support pins 344 may support an edge portion of a rear surface of the substrate W so that the substrate W is spaced apart from the upper surface of the support plate 342 at a predetermined distance.

[0071] The chuck pin 346 may be mounted on the support plate 342. The chuck pin 346 may hold the lateral portion of the substrate W. A plurality of chuck pins 346 may be provided. The chuck pin 346 may be positioned further away from the center of the support plate 342 than the support pin 344. The chuck pin 346 may protrude upward from the upper surface of the support plate 342. The chuck pin 346 may support the lateral portion of the substrate W so that the substrate W does not deviate from the correct position to the side when the support plate 342 rotates. The chuck pin 346 may move linearly between an outer position and an inner position along the radial direction of the support plate 342. The outer position is a position further away from the center of the support plate 342 than the inner position. When the substrate W is loaded onto or unloaded from the support plate 342, the chuck pin 346 may be located at the outer position, and when a process is performed on the substrate W, the chuck pin 346 may be located at the inner position. The inner position is a position where the chuck pin 346 and the lateral portion of the substrate W are in contact with each other, and the outer position is a position where the chuck pin 346 and the substrate W are spaced apart from each other.

[0072] Each of the chuck pins 346 may be grounded, such as Figure 3 As shown. The chuck pin 346 may be electrically connected to the support plate 342. Therefore, the static electricity generated in the process of processing the substrate W can be removed by the ground path formed by the chuck pin 346. The chuck pin 346 may include a contact portion 346a in contact with the lateral portion of the substrate W, a grounding portion 346c that is grounded, and an intermediate portion 346b disposed between the contact portion 346a and the grounding portion 346c. The contact portion 346a, the intermediate portion 346b, and the grounding portion 346c may have different resistances. For example, the resistance may gradually decrease as it approaches the ground line. For example, the contact portion 346a may have a higher resistance than the intermediate portion 346b, and the intermediate portion 346b may have a higher resistance than the grounding portion 346c. For example, the contact portion 346a may have a resistance of 1M ohm, the intermediate portion 346b may have a resistance of 1K ohm, and the grounding portion 346c may have a resistance of 10 ohms. Static electricity has the property of flowing in the direction toward the substrate with low resistance. That is, since the chuck pin 346 has a resistance gradient, static electricity generated in a substrate treating process may flow in a direction toward the ground line and may be removed more effectively.

[0073] The rotation drive member rotates the support plate 342. The support plate 342 can be rotated around its central axis by the rotation drive member. The rotation drive member includes a hollow shaft 347 and an actuator 348. The hollow shaft 347 has a cylindrical shape facing the third direction 16. The upper end of the hollow shaft 347 is fixedly coupled to the lower surface of the support plate 342. The actuator 348 provides a driving force to rotate the hollow shaft 347. The actuator 348 can be a motor. The actuator 348 can be a hollow motor with a hollow hole. The hollow shaft 347 is rotated by the actuator 348, and the support plate 342 can rotate together with the hollow shaft 347.

[0074] The lifting unit 360 linearly moves the processing container 320 in the up-down direction. The height of the processing container 320 relative to the support plate 342 changes as the processing container 320 moves in the up-down direction. When the substrate W is loaded onto or unloaded from the support plate 342, the lifting unit 360 lowers the processing container 320 so that the support plate 342 protrudes upward from the processing container 320. In addition, when performing a process, the lifting unit 360 adjusts the height of the processing container 320 according to the type of the processing liquid L dispensed onto the substrate W so that the processing liquid L is introduced into the preset recovery bowls 322 and 326. The lifting unit 360 includes a bracket 362, a movable shaft 364, and an actuator 366. The bracket 362 is fixedly attached to the outer wall of the processing container 320, and the movable shaft 364 is fixedly coupled to the bracket 362 and moves in the up-down direction by the actuator 366. The lifting unit 360 may independently adjust the heights of the inner recovery bowl 322 and the outer recovery bowl 326. Alternatively, the lifting unit 360 may move the support plate 342 in the up-and-down direction.

[0075] The lifting unit 360 may be grounded. The lifting unit 360 may be electrically connected to the processing container 320. Therefore, static electricity that may be generated by friction between the processing liquid L and the processing container 320 may be removed along a grounded path formed by the lifting unit 360.

[0076] The upper fluid dispensing unit 380 may be a liquid dispensing unit that dispenses the processing liquid L onto the substrate W. The upper fluid dispensing unit 380 dispenses the processing liquid L onto the upper surface of the substrate W. The upper surface of the substrate W may be a patterned surface on which a pattern is formed. A plurality of upper fluid dispensing units 380 may be provided. The upper fluid dispensing unit 380 may dispense different types of processing liquids L onto the substrate W. Each of the upper fluid dispensing units 380 includes a moving member 381 and a nozzle 389.

[0077] The moving member 381 moves the nozzle 389 between the process position and the standby position. Here, the process position is defined as a position where the nozzle 389 faces the substrate W supported on the support unit 340, and the standby position is defined as a position where the nozzle 389 deviates from the process position. According to one embodiment, the process position includes a pre-processing position and a post-processing position. The pre-processing position is a position where the nozzle 389 distributes the processing liquid to the first distribution position, and the post-processing position is a position where the nozzle 389 distributes the processing liquid to the second distribution position. The first distribution position may be a position closer to the center of the substrate W than the second distribution position, and the second distribution position may be a position including an end portion of the substrate W. Optionally, the second distribution position may be an area adjacent to the end portion of the substrate W.

[0078] The moving member 381 includes a support shaft 386, an arm 382 and a driving member 388. The support shaft 386 is located on one side of the processing container 320. The support shaft 386 has a rod-like shape, and its length direction is parallel to the third direction 16. The support shaft 386 can be rotated by the driving member 388. The support shaft 386 can move upward and downward. The arm 382 is coupled to the upper end of the support shaft 386. The arm 382 extends from the support shaft 386 at right angles thereto. The nozzle 389 is fixedly coupled to one end of the arm 382. When the support shaft 386 rotates, the nozzle 389 can swing with the arm 382. The nozzle 389 can move between the process position and the standby position. Optionally, the arm 382 can move forward or backward along its length direction. When viewed from above, the path along which the nozzle 389 moves can be consistent with the central axis of the substrate W at the process position. For example, the processing liquid may include chemicals, rinse solutions and organic solvents. The chemical may be a liquid having acid or alkaline properties. Chemicals may include sulfuric acid (H 2 SO 4 ), phosphoric acid (P 2 O 5 ), hydrofluoric acid (HF) and ammonium hydroxide (NH 4 The rinse solution can be deionized water (H 2 O). The organic solvent may be isopropyl alcohol (IPA).

[0079] The lower fluid dispensing unit 370 may clean and dry the lower surface of the substrate W. The lower fluid dispensing unit 370 may dispense fluid to the lower surface of the substrate W. The lower surface of the substrate W may be a non-patterned surface opposite to a surface on which a pattern is formed. The lower fluid dispensing unit 370 may dispense liquid simultaneously with the upper fluid dispensing unit 380. The lower fluid dispensing unit 370 may be fixed so as not to rotate.

[0080] The controller 390 may control the substrate processing apparatus 300. The controller 390 may control the substrate processing apparatus 300 so that the substrate processing apparatus 300 performs a liquid processing process on the substrate W.

[0081] The processing container 320, the support unit 340, the lifting unit 360, the upper fluid dispensing unit 380, and the lower fluid dispensing unit 370 described above may be examples of components provided in the process chamber 260, which will be described below. For example, the processing container 320, the nozzle 389, and the support plate 342 may be examples of components to be described below.

[0082] The component disposed in the process chamber 260 may be formed of a material containing fluorine resin or plastic. For example, the component may be formed of a material containing ethylene tetrafluoroethylene (ETFE) or plastic. The component formed of a material containing fluorine resin or plastic may be provided in a state where the surface is subjected to ion implantation.

[0083] Figure 4 and Figure 5 : is a view showing molecular bond breakage and crosslinking generated when ions are implanted into the surface of a part formed of a fluororesin or a plastic material. When gas or solid ions are implanted into a part formed of a fluororesin or a plastic material, the ions penetrate into the surface of the part. When the ions penetrate into the surface of the part, the surface conductivity is improved. The improvement in surface conductivity is caused by molecular bond breakage and crosslinking, which depends on the increase of CC bonds and / or C=C bonds caused by the ions implanted into the surface of the part and the increase of radiation damage.

[0084] For example, when ions are implanted in ETFE in a fluororesin, a cross-linking phenomenon occurs in which a C-H bond and a C-F bond are reduced and a C=C double bond and a C≡C triple bond are increased. Therefore, the surface of the component has appropriate conductivity. In addition, the ion-implanted surface of the component has an ESD dissipation property due to which static electricity is almost not generated at all. When ions are implanted in the surface of a component formed of a material containing a fluororesin, the surface of the component has a resistance of about 1M ohm to about 1G ohm. The resistance of about 1M ohm to about 1G ohm meets the SEMI standard.

[0085] When the surface of the component has a dissipative property, static electricity caused by friction with the treatment liquid L is almost not generated at all. Even if a small amount of static electricity is generated, when the component is grounded, the static electricity can be removed through the grounding path of the component because the surface of the component has a certain conductivity. In addition, when the surface of the component has a resistance of about 1M ohm to about 1G ohm, the generated static electricity may not be removed quickly, and thus the occurrence of the arc discharge phenomenon can be minimized.

[0086] Figure 6 It is shown Figure 2320 is a view of a portion of a substrate processing apparatus. The processing container 320 may be used as an example of the above-mentioned components. For example, the processing container 320 may be formed of a material containing a fluororesin or a plastic. In addition, the surface of the processing container 320 may be subjected to ion implantation. For example, the inner surface and the outer surface of the processing container 320 may be subjected to ion implantation. The ion-implanted surface of the processing container 320 may have dissipative properties. In addition, the ion-implanted surface of the processing container 320 may have appropriate conductivity. In addition, the ion-implanted surface of the processing container 320 may have a resistance of 1M ohm to 1G ohm.

[0087] Therefore, if Figure 7 As shown, even if the processing liquid L is dispensed onto the rotating substrate W and scattered from the rotating substrate W and the scattered processing liquid L rubs against the processing container 320, static electricity is hardly generated at all. Even if static electricity is generated, it can be discharged through the processing container 320 and the lifting unit 360. This is because the surface of the processing container 320 has appropriate conductivity.

[0088] In addition, in order to efficiently remove static electricity, the surface of the second inclined portion 326a (see Figure 6 The amount of ions implanted into the area A) and the surface of the second side wall portion 326b (see Figure 6 The amount of ions in the region B) may be different from each other. This is to make the surface resistance of the second inclined portion 326a and the surface resistance of the second sidewall portion 326b different from each other. This is based on the following principle: when a large amount of ions are implanted in a component, the surface resistance of the component decreases, and when a small amount of ions are implanted in a component, the surface resistance of the component increases.

[0089] For example, when the amount of ions injected into the second inclined portion 326a is less than the amount of ions injected into the second sidewall portion 326b, the size of the surface resistance of the second inclined portion 326a may be greater than the size of the surface resistance of the second sidewall portion 326b. That is, even if the friction between the processing liquid L and the second inclined portion 326a generates static electricity, the generated static electricity will flow toward the second sidewall portion 326b with low surface resistance. Since the second sidewall portion 326b is coupled to the grounded lifting unit 360, the static electricity transmitted to the second sidewall portion 326b can be removed by the grounding wire connected to the lifting unit 360. That is, the surface resistance of the processing container 320 can gradually decrease as it approaches the area where the processing container 320 is coupled to the lifting unit 360, and thus the generated static electricity can be effectively removed.

[0090] Similarly, the amount of ions implanted in the surface of the first inclined portion 322a and the amount of ions implanted in the surface of the first sidewall portion 322b may be different from each other. For example, the amount of ions implanted in the surface of the first inclined portion 322a may be less than the amount of ions implanted in the surface of the first sidewall portion 322b.

[0091] Figure 8 yes Figure 2 342 can be used as an example of the above-mentioned components. For example, the support plate 342 can be formed of a material containing a fluororesin or a plastic. In addition, the surface of the support plate 342 can be subjected to ion implantation. For example, the upper surface of the support plate 342 can be subjected to ion implantation. The ion-implanted upper surface of the support plate 342 can have dissipative properties. In addition, the ion-implanted upper surface of the support plate 342 can have appropriate conductivity. In addition, the ion-implanted upper surface of the support plate 342 can have a resistance of 1M ohm to 1G ohm.

[0092] In addition, the amount of ions injected into the central region of the support plate 342 and the amount of ions injected into the edge region of the support plate 342 when viewed from above may be different from each other. For example, the amount of ions injected into the central region of the support plate 342 may be less than the amount of ions injected into the edge region of the support plate 342. In this case, the surface resistance of the central region of the support plate 342 may be higher than the surface resistance of the edge region of the support plate 342. The surface resistance of the upper surface of the support plate 342 may gradually decrease along the radial direction of the support plate 342. For example, as Fig. 9 As shown, the surface resistance of the central area P1 of the support plate 342 may be 100M ohms. The surface resistance of the middle area P2 of the support plate 342 may be 10M ohms. The surface resistance of the edge area P3 of the support plate 342 may be 1M ohms. Since the surface resistance of the central area P1 of the support plate 342 is higher than the surface resistance of the edge area P3 of the support plate 342, the static electricity transmitted to the upper surface of the support plate 342 flows toward the edge area P3 of the support plate 342. As described above, the grounding chuck pin 346 is disposed on the edge area P3 of the support plate 342. The surface resistance of the edge area P3 of the support plate 342 may be the same as the resistance of the contact portion 346a of the chuck pin 346. Therefore, the static electricity transmitted to the support plate 342 can be effectively removed by the chuck pin 346.

[0093] Fig.10 It is shown Figure 2 389 can be used as an example of the above-mentioned components. The nozzle 389 can be formed of a material containing fluorine resin or plastic. The surface of the nozzle 389 can be subjected to ion implantation. For example, the outer surface 389a of the nozzle 389 can be subjected to ion implantation. In addition, the discharge channel 389b formed in the nozzle 389 and through which the treatment liquid L flows can be subjected to ion implantation (see Fig.10 The ion-implanted outer surface 389a of the nozzle 389 and the ion-implanted exhaust channel 389b may have dissipative properties. The ion-implanted outer surface 389a of the nozzle 389 and the ion-implanted exhaust channel 389b may have appropriate conductivity. The ion-implanted outer surface 389a of the nozzle 389 and the ion-implanted exhaust channel 389b may have a resistance of 1M ohm to 1G ohm.

[0094] Fig.11 2 is a view showing an ion implantation apparatus according to an embodiment of the present inventive concept. Fig.11 , an ion implantation apparatus 400 according to an embodiment of the inventive concept may include a housing 410 , a spin chuck 420 , a moving track 430 , an ion beam emission unit 440 , and an exhaust line 450 .

[0095] The housing 410 may have an inner space 412. The rotating chuck 420 may support and rotate the above-mentioned components (e.g., the support plate 342) in the inner space 412. The moving track 430 may laterally move the rotating chuck 420. The ion beam emitting unit 440 may emit an ion beam to the components supported on the rotating chuck 420. The exhaust line 450 may be connected to the housing 410 and may exhaust the gas G or byproducts generated in the inner space 412 to the outside of the housing 410.

[0096] Fig.12 It is shown Fig.11 A view showing a state in which an ion implantation apparatus performs ion implantation on a component. Fig.12 In the ion implantation method according to an embodiment of the inventive concept, a component may be supported on a rotating chuck 420 and may be rotated in one direction by the rotating chuck 420. The ion beam emission unit 440 may emit an ion beam to the rotating component. At this time, the ion beam emission unit 440 may emit an ion beam containing a selected one of gas ions and solid ions to the component. For example, in order to reduce the surface resistance of the component, the ion beam emission unit 440 may emit an ion beam containing solid ions to the component. In contrast, in order to increase the surface resistance of the component, the ion beam emission unit 440 may emit an ion beam containing gas ions to the component.

[0097] When viewed from above, the ion beam may be emitted to the component from a position eccentrically offset from the center of rotation of the component. When the ion beam is emitted in this manner, overheating of the component caused by the ion beam being focused on the component may be minimized.

[0098] When the ion beam is emitted to the component, F and H broken by the ions are generated as outgas G. However, according to an embodiment of the inventive concept, the component may be rotated by the spin chuck 420 when the ion beam is emitted, and thus the outgas G generated during ion implantation may be moved away from the component by a gas flow generated by the rotation of the spin chuck 420 or the component.

[0099] Fig.13 is a diagram showing an example of the amount of ions delivered to a component along the radial direction of the component. Specifically, Fig.13 4 is a diagram showing the amount of ions emitted to a component by the ion beam emitting unit 440. Fig.13 As shown, the amount of ions emitted to the surface of the component may be constant along the radial direction of the component. However, the amount of ions emitted to the surface of the component is not limited thereto. For example, in order to generate a gradient of the surface resistance of the component as described above, the amount of ions delivered may be varied along the radial direction of the component, such as Fig.14 For example, the ion beam may be emitted to the component so that the amount of ions implanted in the central region of the component and the amount of ions implanted in the edge region of the component are different from each other. For example, the ion beam may be emitted to the component so that the amount of ions implanted in the central region of the component is less than the amount of ions implanted in the edge region of the component.

[0100] As described above, according to the embodiments of the inventive concept, a substrate may be processed efficiently.

[0101] In addition, according to embodiments of the inventive concept, generation of static electricity may be minimized during processing of a substrate.

[0102] Furthermore, according to embodiments of the inventive concept, static electricity generated in the process of processing a substrate may be effectively removed.

[0103] Furthermore, according to an embodiment of the present inventive concept, a component having chemical resistance and heat resistance of a fluororesin or plastic and capable of minimizing the generation of static electricity may be manufactured.

[0104] In addition, according to an embodiment of the present inventive concept, a component having chemical resistance and heat resistance of a fluororesin or plastic and capable of effectively removing generated static electricity may be manufactured.

[0105] Effects of the present inventive concept are not limited to the above-mentioned effects, and any other effects not mentioned herein may be clearly understood by those skilled in the art to which the present inventive concept pertains from the present specification and the accompanying drawings.

[0106] The above description illustrates the inventive concept. In addition, the above-mentioned contents describe the embodiments of the inventive concept, and the inventive concept can be used in various other combinations, changes and environments. That is, the inventive concept can be changed or modified without departing from the scope of the inventive concept disclosed in this specification, the equivalent scope of the written disclosure and / or the technology or knowledge scope of those skilled in the art. The written implementation method describes the best state of the technical spirit for realizing the inventive concept, and various changes required for the specific application and purpose of the inventive concept can be made. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept in the disclosed implementation state. In addition, it should be understood that the attached claims include other implementation methods.

[0107] Although the inventive concept has been described with reference to the embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are not limitative but illustrative.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: a process chamber configured to perform a liquid treatment process by dispensing a treatment liquid onto the substrate; as well as a processing container, the processing container being arranged in the process chamber, wherein the surface of the processing container is formed of a material containing ion-implanted fluororesin, wherein the processing container is provided in a vessel shape opened at the top, the processing container having a processing space in which the substrate is processed, and The processing container is electrically connected to a lifting unit configured to move the processing container in an upward / downward direction, the lifting unit being grounded, The processing container comprises: a side wall portion, the side wall portion being coupled to the lifting unit; as well as an inclined portion extending from the side wall portion in an upwardly inclined direction, and wherein an amount of ions implanted into a surface of the inclined portion and an amount of ions implanted into a surface of the side wall portion are different from each other. 2 . The apparatus of claim 1 , wherein an amount of the ions implanted in the surface of the inclined portion is smaller than an amount of the ions implanted in the surface of the sidewall portion.

3. The device of claim 1, wherein the device further comprises: a support plate disposed in the process chamber and configured to support the substrate in the process chamber, the surface of the support plate being formed of a material containing an ion-implanted fluorine resin; as well as A chuck pin is mounted on the support plate and is configured to hold the substrate.

4. The apparatus of claim 3, wherein the chuck pin is grounded, and The support plate is electrically connected to the chuck pin. 5 . The apparatus of claim 4 , wherein an amount of ions implanted in a central region of the support plate and an amount of ions implanted in an edge region of the support plate when viewed from above are different from each other. 6 . The apparatus of claim 5 , wherein an amount of the ions implanted in the central region is less than an amount of the ions implanted in the edge region.

7. The apparatus of any one of claims 3 to 6, wherein the chuck pin comprises: a contact portion configured to contact the substrate; as well as a grounding portion, the grounding portion being electrically connected to the contact portion, the grounding portion being grounded, and wherein the contact portion and the ground portion have resistances different from each other.

8. The apparatus of claim 7, wherein the resistance of the contact portion is higher than the resistance of the ground portion.

9. The device of claim 1, wherein the device further comprises: a supporting unit configured to support the substrate in the process chamber; as well as A nozzle is provided in the process chamber and is configured to dispense the processing liquid onto the supporting unit, and a surface of the nozzle is formed of a material containing an ion-implanted fluorine resin.

10. The apparatus of claim 9, wherein the nozzle is grounded, and A discharge channel formed in the nozzle and through which the treatment liquid flows is subjected to ion implantation.

11. An apparatus for processing a substrate, the apparatus comprising: a processing container having a processing space; a supporting unit configured to support the substrate in the processing space, the supporting unit having a supporting plate; as well as a liquid dispensing unit, the liquid dispensing unit comprising a nozzle configured to dispense a processing liquid onto the substrate supported on the supporting unit, wherein at least one of the processing container, the support plate, or the nozzle is formed of a material containing a fluorine resin or plastic, and a surface of the at least one of the processing container, the support plate, or the nozzle is subjected to ion implantation to have a dissipative property, and wherein the processing container is electrically connected to a lifting unit configured to move the processing container in an upward / downward direction, the lifting unit is grounded, and The surface resistance of the processing container gradually decreases as approaching a region where the processing container is coupled to the lifting unit. 12 . The apparatus of claim 11 , wherein a surface resistance of a central region of the support plate when viewed from above is higher than a surface resistance of an edge region of the support plate.

13. The apparatus of claim 12, wherein the supporting unit comprises a chuck pin mounted on the supporting plate and configured to hold the substrate, and The chuck pin is grounded and electrically connected to the support plate.

14. The apparatus of claim 13, wherein the chuck pin comprises: a contact portion configured to contact the substrate; as well as a grounding portion, the grounding portion being electrically connected to the contact portion, the grounding portion being grounded, and The resistance of the contact portion is higher than the resistance of the ground portion.

15. An apparatus for processing a substrate, the apparatus comprising: a processing container having a processing space; a supporting unit configured to support the substrate in the processing space, the supporting unit having a supporting plate; as well as a liquid dispensing unit, the liquid dispensing unit comprising a nozzle configured to dispense a processing liquid onto the substrate supported on the supporting unit, The processing container and the support plate are formed of a material containing a fluorine resin and are subjected to ion implantation to have a surface resistance of 1 M ohm to 1 G ohm.

16. The apparatus of claim 15, wherein the processing container is electrically connected to a lifting unit configured to move the processing container in an upward / downward direction, the lifting unit being grounded, wherein the processing container includes a side wall portion coupled to the lifting unit and an inclined portion extending from the side wall portion in an upwardly inclined direction, and The surface resistance of the inclined portion is higher than the surface resistance of the side wall portion.

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