Wafer film pasting method

Abstract

The application provides a wafer film pasting method. The wafer film pasting method comprises the following steps: providing a protective film, a spacer film and a wafer, wherein the spacer film has a containing space consistent with the shape of the wafer; placing the wafer in the containing space of the spacer film with the protective film facing the wafer and the spacer film, and the protective film comprising a first section facing the wafer; pressing the protective film and the wafer; and peeling off the spacer film. In the pressing process, the first section is combined with the wafer, and the spacer film limits the generation of glue flow. After the spacer film is removed, there is almost no glue flow around the wafer, so that the process of cleaning the glue flow is omitted, and time and manpower are saved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a wafer lamination method. Background Technology

[0002] The surface of a wafer has circuit structures formed on it, which typically require a protective film to protect them. A common wafer lamination method involves cutting a protective film to the exact size of the wafer and then laminating it under high temperature and pressure. However, after lamination, a ring of excess adhesive forms around the wafer edge. To ensure subsequent processes can operate normally, this excess adhesive must be manually removed, wasting time and manpower. Furthermore, because the protective film's size is identical to the wafer's size, the protective layer is difficult to peel off after lamination, impacting production efficiency. Summary of the Invention

[0003] To solve at least one of the above-mentioned technical problems, the present invention provides a wafer lamination method and a semiconductor device that reduces the number of processes.

[0004] Specifically, the present invention provides a wafer bonding method, the wafer bonding method comprising: providing a protective film, an isolation film, and a wafer, the isolation film having a receiving space consistent with the shape of the wafer; placing the protective film facing the wafer and the isolation film, the wafer being placed within the receiving space of the isolation film, the protective film including a first segment facing the wafer; pressing the protective film and the wafer together; and peeling off the isolation film.

[0005] Furthermore, the protective film includes a second segment facing the isolation film; in the step of peeling off the isolation film, the second segment and the isolation film are peeled off together.

[0006] Furthermore, the protective film includes a protective layer and a protective layer disposed along a longitudinal direction, wherein the longitudinal direction is the direction in which the wafer and the first segment are arranged; in the step of peeling off the isolation film, the protective layer of the first segment, the second segment, and the isolation film are peeled off together.

[0007] Furthermore, the isolation membrane is made of an antistatic rigid material; or, the isolation membrane is dust-free paper.

[0008] Furthermore, the isolation membrane includes a plurality of positioning holes arranged circumferentially along the receiving space.

[0009] Furthermore, the plurality of positioning holes are spaced apart from the receiving space.

[0010] Furthermore, the steps of providing the protective film and the isolation film include: cutting the isolation film material to cut out the receiving space to form the isolation film; cutting the protective film from the protective film material, wherein the size of the protective film is equal to the size of the isolation film.

[0011] Furthermore, the containment space is closed in the lateral direction, and the longitudinal dimension of the containment space is smaller than the longitudinal dimension of the wafer, wherein the longitudinal direction is perpendicular to the lateral direction.

[0012] On the other hand, the present invention also provides a wafer bonding method, the wafer bonding method comprising: providing a protective film material, an isolation film material, and a plurality of wafers, the isolation film material having a plurality of receiving spaces consistent with the shape of the wafers; placing the protective film material facing the plurality of wafers and the isolation film material, the plurality of wafers being respectively placed in corresponding receiving spaces, the protective film material including a plurality of first segments, each first segment facing the corresponding wafer; pressing the protective film material and the plurality of wafers together; and peeling off the isolation film material.

[0013] In another aspect, the present invention also provides a semiconductor device obtained by the wafer lamination method described above.

[0014] During the lamination process, the first section is bonded to the wafer, and the release liner restricts the flow of adhesive. After removing the release liner, there is almost no adhesive flow around the wafer, thus eliminating the need for cleaning up the adhesive flow, which helps save time and manpower. Attached Figure Description

[0015] Figure 1 This is a front view schematic diagram of wafer bonding, in which... Figure 1 a and Figure 1 b is a front view of the wafer and protective film before bonding. Figure 1 c is a frontal view of the wafer and protective film after lamination.

[0016] Figure 2 This is a front view schematic diagram of a wafer, a protective film, and an isolation film according to an embodiment of the present invention.

[0017] Figure 3 yes Figure 2 The diagram shows a side view of the wafer, protective film, and isolation film.

[0018] Figure 4 yes Figure 2 The diagram shows the structure of the protective film.

[0019] Figure 5 yes Figure 2 The diagram shown is a front view of the wafer after it has been laminated with the protective film.

[0020] Figure 6 This is a front view schematic diagram of a semiconductor device obtained by a wafer bonding method according to an embodiment of the present invention.

[0021] Figure 7 yes Figure 6 A side view of the semiconductor device shown.

[0022] Figure 8 This is a front view schematic diagram of another type of separator of the present invention.

[0023] Figure 9 yes Figure 2 The diagram shows a side view of the wafer, the protective film, and another type of isolation film.

[0024] Figure 10 This is a front view schematic diagram of a wafer, protective film material, and isolation film material according to another embodiment of the present invention. Detailed Implementation

[0025] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatuses consistent with some aspects of the invention as detailed in the appended claims.

[0026] The terminology used in this invention is for the purpose of describing particular embodiments only and is not intended to limit the invention. Unless otherwise defined, the technical or scientific terms used in this invention should be understood in their ordinary sense by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," and similar terms used in this specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, "an" or "a" and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. "A plurality" or "several" indicates two or more. Unless otherwise stated, terms such as "front," "rear," "lower," and / or "upper" are for ease of description only and are not limited to a location or spatial orientation. Terms such as "comprising" or "including" mean that the element or object preceding "comprising" covers the element or object listed following "comprising" or "including" and its equivalents, and does not exclude other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections and can include electrical connections, whether direct or indirect. The singular forms “a,” “the,” and “the” used in this specification and appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0027] Please combine Figure 1After wafer 1A is bonded to protective film 2A, adhesive residue 20A is easily generated at the lateral edge of the wafer. Removing this residue requires time and manpower, affecting work efficiency. Furthermore, careless handling during the cleaning process can damage the wafer. To address this issue, this embodiment provides a wafer bonding method. Please refer to... Figures 2 to 7 The wafer bonding method includes:

[0028] Step S11: Provide a protective film 2, an isolation film 3, and a wafer 1. The isolation film 3 has a receiving space 31 with a shape consistent with that of the wafer 1. The consistency of the wafer 1 and the receiving space 31 can be understood as the wafer 1 being in close contact with the inner surface of the receiving space 31. In this embodiment, a portion of the wafer 1 protrudes beyond the receiving space; that is, the thickness of the wafer 1 (i.e., the dimension of the wafer 1 in the longitudinal Y direction) is greater than the thickness of the isolation film 3 (i.e., the dimension of the receiving space in the longitudinal Y direction). For example, the thickness of the wafer 1 is 600~800 μm, and the thickness of the isolation film 3 is 250~350 μm. Of course, in practice, there may be extremely small dimensional errors. Within a reasonable error range, the wafer 1 and the receiving space 31 can still be considered to have consistent shapes.

[0029] Step S12: Position the protective film 2 facing the wafer 1 and the isolation film 3. The wafer 1 is placed in the receiving space 31 of the isolation film 3. The protective film 2 includes a first section 21 facing the wafer 1 and a second section 22 facing the isolation film 3.

[0030] Step S13: Press the protective film 2 and the wafer 1 together.

[0031] Step S14: Peel off the second section 22 of the isolation membrane 3 and the protective membrane 2.

[0032] Please combine Figure 2 and Figure 3 In step S11, the protective film 2 and the separator 3 can be formed by cutting from the corresponding protective film material and separator material. Specifically, the separator material is cut into the desired shape (which can be...). Figure 2The isolation membrane 3 is formed by cutting out the receiving space 31 within the square shape shown in the diagram. The receiving space 31 extends through the first surface 301 and the second surface 302 of the isolation membrane 3. The first surface 301 and the second surface 302 are arranged along the longitudinal direction Y, with the first surface 301 facing the protective membrane 2. The receiving space 31 is closed in the transverse direction X. The isolation membrane 3 also includes a plurality of positioning holes 32, which are arranged circumferentially along the receiving space 31. The positioning holes 32 are used to position the isolation membrane 3 before pressing. In this embodiment, the positioning holes 32 are connected to the receiving space 31, so the positioning holes 32 can be formed at the same time as cutting out the receiving space 31, thereby reducing the cutting process. The wafer 1 is also provided with a positioning notch 11, which is used for positioning the wafer 1. It is easy to understand that the size of the positioning hole 32 is much smaller than the size of the isolation membrane 3, and the size of the positioning notch 11 is much smaller than the size of the wafer 1. Since the size of the positioning hole 32 is much smaller than that of the separator 3 and the wafer 1, even if there is adhesive flow around the edge of the wafer 1 corresponding to the positioning hole 32, the amount of adhesive flow is very small and has little impact on the product, so there is no need to clean it.

[0033] The protective film 2 can be cut from protective film material, and its size can be equal to that of the isolation film 3, making it easy to cut. Here, the size refers to the dimension in the horizontal (X) direction. In fact, except for the receiving space 31, the protective film 2 and the isolation film 3 have completely identical shapes. Of course, in other embodiments, it is sufficient to ensure that the protective film 2 can cover the wafer 1 and a portion of the area outside the wafer 1.

[0034] Please combine them together Figure 4 The protective film 2 includes a carrier layer 203, a protective layer 201, and a protective layer 202 arranged sequentially along the longitudinal direction Y. The carrier layer 203 is removed before step S12. The protective layer 202 is used to protect the protective layer 201 and is removed together with the release film 3 in step S14. The protective layer 201 is bonded to the wafer 1 to protect the wafer 1. Optionally, the carrier layer 203 can be made of PET material, the protective layer 201 can be made of resin material, and the protective layer 202 can be made of PET material or PE material.

[0035] The isolation film 3 forms a receiving space 31 for accommodating the wafer 1. If the isolation film 3 is prone to deformation, it will affect the positional accuracy of the wafer 1; on the other hand, electrostatic discharge damage may cause the wafer 1 to fail. Therefore, the isolation film 3 can be made of an antistatic rigid material. In this embodiment, the isolation film 3 is selected as release paper, also known as release liner or anti-stick paper, which is formed by coating silicone oil onto the base paper through a coating process.

[0036] Please combine Figure 5In step S12, the protective film 2 is positioned facing the wafer 1 and the isolation film 3. The first segment 21 of the protective film 2 corresponds to the wafer 1, and the second segment 22 of the protective film 2 corresponds to the isolation film 3. At this time, the first segment 21 and the second segment 22 of the protective film 2 are integrally connected. During step S13, the protective layer 201 is in a molten state. Due to the thickness difference between the isolation film 3 and the wafer 1, the protective layer 201A of the first segment 21 is bonded to the wafer 1, and the protective layer 201B of the second segment 22 is bonded to the isolation film 3. The thickness difference causes the first segment 21 and the second segment 22 to be cut off by the critical edge of the first surface and side surface of the wafer 1, thus there is no adhesive flow around the wafer 1. The protective layer 202B of the second segment 22 is always connected to the protective layer 202A of the first segment 21. Therefore, when peeling off the isolation film 3 and the second segment 22, the protective layer 202B of the second segment 22 is peeled off along with the protective layer 202A of the first segment 21.

[0037] In step S13, the wafer 1 and the protective film 2 can be laminated in a vacuum environment, and the surface of the laminated product is leveled using a leveling device. The temperature range within the vacuum environment is, for example, 110~130℃, and the pressure acting on the protective film 2 (achieved by evacuating gas using a gas extraction device) ranges from 80~120N. Correspondingly, the material of the isolation film 3 must also be able to withstand high temperature and high pressure. At this time, the protective layer 201A of the first segment 21 of the protective film 2 is bonded to the wafer 1, the protective layer 201B of the second segment 22 of the protective film 2 is bonded to the isolation film 3, and the protective layer 202A of the first segment 21 is connected to the protective layer 202B of the second segment 22.

[0038] In step S14, by peeling off the release liner 3, the protective layer 202A of the second section 22 and the first section 21 connected to the release liner 3 is removed together (the carrier layer 203 of the protective film 2 was removed before step S12). Please refer to... Figure 6 and Figure 7 The semiconductor device obtained by the semiconductor bonding method of this embodiment includes a wafer 1 and a protective layer 201A of the first segment 21 of the protective film 2. The wafer 1 and the protective layer 201A are arranged along the longitudinal direction Y. The protective layer 201A can protect the circuit on the surface of the wafer 1 from contamination or impact. Of course, in some embodiments, the protective film 2 may not have a protective layer 202 and / or a carrier layer 203. Compared to Figure 1 As shown in the structure, the protective layer 202 can be easily removed along with the isolation film 3, avoiding the problem of difficulty in removing the protective layer 202 due to the size of the protective film 2 being the same as the size of the wafer 1.

[0039] In another embodiment, the protective film can also be directly cut into a shape consistent with the wafer, i.e., the protective film only includes the first segment, and in the corresponding step S14, only the separator film 3 is peeled off; at the same time, the thickness of the separator film 3 is consistent with the thickness of the wafer 1, and the other structures are the same as or similar to those in the aforementioned embodiments. Since the separator film 3 fills the space around the wafer 1, it can prevent or limit the flow of adhesive around the wafer 1 during the lamination process, thereby eliminating the need for cleaning up the adhesive flow, which is beneficial for saving time and manpower.

[0040] Please combine Figure 8 In another embodiment, the isolation film 3 includes a receiving space 31 and a plurality of positioning holes 32. The plurality of positioning holes 32 are arranged circumferentially along the receiving space 31, and the receiving space 31 has the same shape as the wafer 1. The plurality of positioning holes 32 are spaced apart from the receiving space 31, that is, the positioning holes 32 and the receiving space 31 are not connected. Therefore, in step S13, the adhesive cannot flow into the positioning holes 32, completely eliminating the possibility of adhesive adhering to the lateral edge of the wafer 1, thereby further improving the quality of the obtained semiconductor device. Other structures in this embodiment (such as protective film, wafer, etc.) are the same as in the aforementioned embodiments and will not be described again.

[0041] Please combine Figure 9 In another embodiment, the separator 3 includes a receiving space 31, the receiving space 31 being shaped similarly to the wafer 1. The receiving space 31 penetrates the first surface 301 of the separator 3 but does not penetrate the second surface 302 of the separator 3. Applying the separator 3 of this embodiment to the wafer lamination method can also prevent adhesive dripping from adhering to the lateral edges of the wafer 1, thereby eliminating the need for adhesive removal. The other mechanisms of this embodiment are the same as those in the previous embodiments and will not be described again.

[0042] Please combine Figure 10 The present invention also provides another wafer bonding method, the wafer bonding method comprising:

[0043] Step S21: Provide a protective film material 200, an isolation film material 300, and a plurality of wafers 1, wherein the isolation film material 300 has a plurality of receiving spaces 31 that are consistent with the shape of the wafers 1;

[0044] Step S22: The protective film material 200 is placed facing the plurality of wafers 1 and the isolation film material 300. The plurality of wafers 1 are respectively placed in the corresponding respective receiving spaces 31. The protective film material 200 includes a plurality of first segments 21 and a plurality of second segments 22. Each first segment 21 faces the corresponding wafer 1, and the plurality of second segments 22 face the isolation film material 300.

[0045] Step S23: Press the protective film material 200 and the plurality of wafers 1 together;

[0046] Step S24: Peel off the second section 22 of the separating membrane material 300 and the protective membrane material 200.

[0047] The protective film material 200 includes a plurality of interconnected protective films 2, and the separator film material 300 includes a plurality of interconnected separator films 3. Both can be obtained by unrolling the corresponding material rolls. Compared with the previous embodiment, in this embodiment, it is not necessary to cut the protective film material 200 and the separator film material 300 into individual protective films 2 and separator films 3 (the receiving space of the separator film 3 still needs to be pre-cut). In step S24, since the second segment 22 of the protective film material 200 is peeled off together with the separator film material 300, no additional cutting process is required. Therefore, the wafer bonding method of this embodiment is beneficial to further simplify the bonding process.

[0048] Similarly, the protective film material 200 may only include the first section, and in the corresponding step S24, only the separator 3 is peeled off; at the same time, the thickness of the separator 3 is the same as the thickness of the wafer 1, and the other structures are the same as or similar to those in the aforementioned embodiments. Since the separator 3 fills the space around the wafer 1, it can prevent or limit the flow of adhesive around the wafer 1 during the lamination process, thereby eliminating the need for cleaning up the adhesive flow, which is beneficial for saving time and manpower.

[0049] In another aspect, the present invention also provides a semiconductor device, which is obtained by the wafer lamination method of any of the foregoing embodiments. The semiconductor device includes a wafer 1 and a protective layer 201A for a first segment 21, wherein the protective layer 201A protects the wafer 1.

[0050] During the lamination process, the first section is bonded to the wafer. The release liner restricts the flow of adhesive. After removing the release liner, there is almost no adhesive flow around the wafer, thus eliminating the need for cleaning up the adhesive flow, which helps save time and manpower.

[0051] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. A wafer lamination method, characterized in that, The wafer bonding method includes: A protective film, an isolation film, and a wafer are provided, wherein the isolation film has a receiving space that conforms to the shape of the wafer; the receiving space extends longitudinally through the isolation film. The protective film faces the wafer and the isolation film, the wafer is placed within the receiving space of the isolation film, the wafer is in close contact with the inner surface of the receiving space, and the protective film includes only a first section facing the wafer; the protective film is cut into a shape consistent with the wafer; the thickness of the isolation film is consistent with the thickness of the wafer; The protective film and the wafer are laminated together, and the isolation film is used to limit the flow of adhesive around the wafer during the lamination process; Peel off the isolation membrane.

2. The wafer lamination method according to claim 1, characterized in that, The insulating membrane is made of an antistatic rigid material; Alternatively, the separating membrane may be a dust-free paper.

3. The wafer lamination method according to claim 2, characterized in that, The isolation membrane includes a plurality of positioning holes arranged circumferentially along the receiving space.

4. The wafer lamination method according to claim 3, characterized in that, The plurality of positioning holes are spaced apart from the receiving space.

5. The wafer lamination method according to claim 1, characterized in that, The steps for providing protective films and separating films include: The separator material is cut to create the receiving space, thus forming the separator. The protective film is cut from the self-protecting film material.

6. The wafer lamination method according to claim 1, characterized in that, The containment space is closed in the lateral direction, and the longitudinal direction is perpendicular to the lateral direction.

7. A wafer lamination method, characterized in that, The wafer bonding method includes: A protective film material, a separator film material, and a plurality of wafers are provided. The separator film material has a plurality of receiving spaces that conform to the shape of the wafers. Each of the receiving spaces extends through the separator film in the longitudinal direction. The protective film material is positioned facing the plurality of wafers and the isolation film material. The plurality of wafers are respectively placed in their respective receiving spaces, and each wafer is in close contact with the inner surface of its corresponding receiving space. The protective film material comprises only a plurality of first segments, each of which faces its corresponding wafer. Each protective film is cut into a shape consistent with its corresponding wafer. The thickness of the isolation film material is consistent with the thickness of the wafer. The protective film material and multiple wafers are laminated together, and the isolation film is used to limit the flow of adhesive around the wafers during the lamination process. Peel off the separating membrane material.

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