Semiconductor structure and method of forming a semiconductor structure

Abstract

A semiconductor structure and a method for forming the semiconductor structure, the structure comprising: a layer to be etched; a sacrificial layer on the layer to be etched; a functional layer on the sacrificial layer, the functional layer exposing part of the surface of the sacrificial layer; a mask structure on the part of the sacrificial layer exposed by the functional layer, the mask structure being used to transfer a pattern to the layer to be etched. The performance of the semiconductor structure is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more particularly to a semiconductor structure and a method for forming the semiconductor structure. Background Technology

[0002] Photolithography is a crucial technology in semiconductor manufacturing, enabling the transfer of patterns from a photomask to the surface of a silicon wafer, forming semiconductor products that meet design requirements.

[0003] In advanced photolithography processes, extreme ultraviolet (EUV) light can be used as the light source. However, photolithography technology using EUV light as the light source still has many problems. Summary of the Invention

[0004] The technical problem solved by this invention is to provide a semiconductor structure and a method for forming the semiconductor structure, so as to improve the performance of the semiconductor structure.

[0005] To address the aforementioned technical problems, the present invention provides a semiconductor structure comprising: a layer to be etched; a sacrificial layer located on the layer to be etched; a functional layer located on the sacrificial layer, the functional layer exposing a portion of the surface of the sacrificial layer; and a mask structure located on the portion of the sacrificial layer exposed by the functional layer, the mask structure being used to transfer a pattern to the layer to be etched.

[0006] Optionally, the material of the sacrificial layer may include amorphous organic materials.

[0007] Optionally, the amorphous organic material includes hydrogen-containing amorphous carbon.

[0008] Optionally, the material of the functional layer may include a photosensitive material.

[0009] Optionally, the photosensitive material includes halogen-containing hydrogen-containing amorphous carbon.

[0010] Optionally, the material of the mask structure may include a polar material.

[0011] Optionally, the polar material includes titanium oxide.

[0012] Optionally, the material of the sacrificial layer includes a semiconductor material, wherein the semiconductor material includes silicon.

[0013] Optionally, the material of the mask structure includes semiconductor materials, metals, other oxides or nitrides; the semiconductor material includes silicon germanium, the metal includes nickel or cobalt, the oxide includes tin oxide or silicon oxide, and the nitride includes silicon nitride.

[0014] Optionally, the photosensitive material includes photoresist.

[0015] Optionally, it may also include a compensation layer located on the surface of the mask structure, the material of which is the same as that of the mask structure.

[0016] Optionally, it may also include: a transition structure located between the layer to be etched and the sacrificial layer, the transition structure comprising one or more transition layers, the material of the transition layer comprising one or more combinations of titanium nitride, silicon oxide, silicon nitride, silicon and silicon oxynitride.

[0017] Optionally, the layer to be etched includes: a substrate; a device layer located on the substrate, the device layer including an isolation structure and a device structure located within the isolation structure, the device structure including a diode, a transistor, a capacitor, an inductor, a resistor, or a metal conductive layer.

[0018] Accordingly, the present invention also provides a method for forming a semiconductor structure, comprising: providing a layer to be etched; forming a sacrificial layer on the layer to be etched; forming a patterned functional layer on the sacrificial layer, wherein the patterned functional layer exposes a portion of the surface of the sacrificial layer; and forming a mask structure on the sacrificial layer exposed by the functional layer using a selective process.

[0019] Optionally, the selective process includes a selective deposition process.

[0020] Optionally, the material of the sacrificial layer includes a polar material; the material of the mask structure includes a polar material.

[0021] Optionally, the material of the sacrificial layer includes an amorphous organic material, which includes hydrogen-containing amorphous carbon.

[0022] Optionally, the polar material includes titanium oxide.

[0023] Optionally, the process parameters of the selective deposition process include: the reaction gas includes a mixture of titanium tetrachloride and oxygen, or alkoxy titanium gas.

[0024] Optionally, the method for forming the sacrificial layer and the functional layer includes: forming an initial sacrificial layer on the layer to be etched; performing a first modification treatment on the surface of the initial sacrificial layer to form a sacrificial layer and an initial functional layer located on the sacrificial layer; and removing a portion of the initial functional layer to form a patterned functional layer.

[0025] Optionally, the process for performing the first modification treatment on the surface of the initial sacrificial layer includes a gas treatment process, wherein the gas in the gas treatment process includes halogen and carbon tetrafluoride gas.

[0026] Optionally, the method for forming the functional layer includes: subjecting a portion of the initial functional layer to extreme ultraviolet (EUV) exposure to form a modified structure; and removing the modified structure to form the functional layer.

[0027] Optionally, the process for removing the modified structure includes a wet etching process.

[0028] Optionally, the material of the functional layer may include a photosensitive material.

[0029] Optionally, the photosensitive material includes halogen-containing hydrogen-containing amorphous carbon.

[0030] Optionally, the photosensitive material includes photoresist.

[0031] Optionally, the process for forming the functional layer includes an exposure and development process; the light source used in the exposure process includes extreme ultraviolet light.

[0032] Optionally, the selective process includes a selective epitaxial process.

[0033] Optionally, the material of the mask structure includes semiconductor materials, metals, other oxides or nitrides; the semiconductor material includes silicon germanium, the metal includes nickel or cobalt, the oxide includes tin oxide or silicon oxide, and the nitride includes silicon nitride.

[0034] Optionally, after forming the mask structure, the method further includes etching the sacrificial layer and the layer to be etched using the mask structure as a mask.

[0035] Optionally, after forming the mask structure, the method further includes: forming a compensation layer on the surface of the mask structure, wherein the material of the compensation layer is the same as the material of the mask structure.

[0036] Optionally, the process for forming the compensation layer includes atomic layer deposition.

[0037] Optionally, before forming a sacrificial layer on the layer to be etched, the method further includes: forming a transition structure on the layer to be etched, the transition structure comprising one or more transition layers, the material of the transition layers comprising one or more combinations of titanium nitride, silicon oxide, silicon nitride, silicon, and silicon oxynitride.

[0038] Optionally, the layer to be etched includes: a substrate; a device layer located on the substrate, the device layer including an isolation structure and a device structure located within the isolation structure, the device structure including a diode, a transistor, a capacitor, an inductor, a resistor, or a metal conductive layer.

[0039] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0040] The semiconductor structure of this invention includes a functional layer on the sacrificial layer, with the functional layer exposing a portion of the surface of the sacrificial layer. A mask structure is present on the exposed portion of the sacrificial layer. The mask structure has a favorable morphology, resulting in a semiconductor structure with a favorable and easily controllable morphology formed subsequently using the pattern transfer of the mask structure, which is beneficial for improving the performance of the semiconductor structure.

[0041] The semiconductor structure formation method of this invention involves forming a patterned functional layer on a sacrificial layer, wherein the patterned functional layer exposes a portion of the surface of the sacrificial layer, and then using a selective process to form a mask structure on the exposed sacrificial layer. The mask structure formed on the sacrificial layer using the selective process has a specific growth shape, resulting in a better morphology. Therefore, it can be used as a mask pattern for semiconductor structures. Subsequent semiconductor structures formed using this mask pattern exhibit better and more controllable morphology, which is beneficial for improving semiconductor structure performance.

[0042] Furthermore, the selective process includes a selective deposition process, the material of the sacrificial layer includes a polar material, such as hydrogen-containing amorphous carbon, and the material of the mask structure includes a polar material, such as titanium oxide. Therefore, the material of the polar mask structure can be deposited and grown on the surface of the polar sacrificial layer, and a mask structure with a certain shape and good morphology can be formed.

[0043] Furthermore, the selective process includes a selective epitaxial process, the material of the sacrificial layer includes a semiconductor material, such as silicon, and the material of the mask structure includes a semiconductor material, such as silicon-germanium. Therefore, the mask structure can be formed on the surface of the sacrificial layer through an epitaxial growth process, and a mask structure with a certain shape and good morphology can be formed.

[0044] Furthermore, the initial sacrificial layer material includes hydrogen-containing amorphous carbon, and the gases used to modify the surface of the initial sacrificial layer include halogen and carbon tetrafluoride gases. These halogen and carbon tetrafluoride gases can modify the hydrogen-containing amorphous carbon into a photosensitive material. After being irradiated with extreme ultraviolet light, the photosensitive material forms a modified structure. The pattern obtained after removing the modified structure is the pattern of the subsequently formed mask structure. The functional layer pattern formed by this method has a good morphology.

[0045] Furthermore, after forming the mask structure, a compensation layer is formed on the surface of the mask structure. The material of the compensation layer is the same as that of the mask structure. Therefore, the material of the compensation layer can repair the defects on the surface of the mask structure caused by the morphology of the functional layer, making the morphology of the mask structure more in line with the design requirements. Attached Figure Description

[0046] Figures 1 to 7This is a cross-sectional structural schematic diagram of the semiconductor structure formation process in one embodiment of the present invention;

[0047] Figure 8 and Figure 9 This is a cross-sectional schematic diagram of a semiconductor structure in another embodiment of the present invention. Detailed Implementation

[0048] As described in the background section, photolithography using extreme ultraviolet (EUV) light as a light source still has many problems.

[0049] Specifically, extreme ultraviolet (EUV) lithography forms patterns on photoresist through exposure and development. However, the photons and secondary electrons generated by the EUV light react with the photoresist material, creating defects that result in poor edge smoothness of the formed photoresist pattern. Consequently, the morphology of the semiconductor structure formed during subsequent etching based on the photoresist pattern is difficult to control, thus affecting the performance of the semiconductor structure.

[0050] To address the aforementioned problems, the present invention provides a semiconductor structure and a method for forming such a structure. The method involves forming a patterned functional layer on a sacrificial layer, exposing a portion of the sacrificial layer surface, and then using a selective process to form a mask structure on the exposed sacrificial layer. The mask structure formed on the sacrificial layer using the selective process has a specific growth shape, resulting in a better morphology. Therefore, it can be used as a mask pattern for semiconductor structures. Subsequent semiconductor structures formed using this mask pattern exhibit better and more easily controlled morphology, which is beneficial for improving semiconductor structure performance.

[0051] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0052] Figures 1 to 7 This is a cross-sectional schematic diagram of the semiconductor structure formation process in an embodiment of the present invention.

[0053] Please refer to Figure 1 Provide the 100-layer layer to be etched.

[0054] The etchable layer 100 includes: a substrate (not shown); a device layer (not shown) located on the substrate, the device layer including an isolation structure and a device structure located within the isolation structure, the device structure including a diode, a transistor, a capacitor, an inductor, a resistor, or a metal conductive layer.

[0055] In this embodiment, the substrate is made of silicon.

[0056] In other embodiments, the substrate material includes silicon carbide, silicon germanium, a multi-element semiconductor material composed of group III-V elements, silicon-on-insulator (SOI), or germanium-on-insulator (GOI). The multi-element semiconductor material composed of group III-V elements includes InP, GaAs, GaP, InAs, InSb, InGaAs, or InGaAsP.

[0057] Please continue to refer to this. Figure 1 A transition structure is formed on the layer 100 to be etched.

[0058] The transition structure is used to transfer the pattern of the subsequently formed mask structure to the layer to be etched.

[0059] The transition structure includes one or more transition layers. In this embodiment, the transition structure includes a first transition layer 101 and a second transition layer 102 located on the first transition layer 101.

[0060] The material of the transition layer includes one or more combinations of titanium nitride, silicon oxide, silicon nitride, silicon, and silicon oxynitride.

[0061] In this embodiment, the material of the first transition layer 101 includes titanium nitride; the material of the second transition layer 102 includes silicon oxide.

[0062] Next, a sacrificial layer 105 and a patterned functional layer 106 located on the sacrificial layer 105 are formed on the transition structure, the patterned functional layer 106 exposing a portion of the surface of the sacrificial layer 105.

[0063] In this embodiment, the material of the functional layer 106 is formed by modifying the material of the sacrificial layer 105. The formation process of the sacrificial layer 105 and the functional layer 106 can be found in [reference needed]. Figures 2 to 4 .

[0064] Please refer to Figure 2 An initial sacrificial layer 103 is formed on the layer to be etched 100.

[0065] The initial sacrificial layer 103 provides a material layer for the subsequently formed functional layers and sacrificial layers.

[0066] The initial sacrificial layer 103 is made of a polar material. Therefore, the material of the subsequent polar mask structure can be deposited and grown on the surface of the polar sacrificial layer, forming a mask structure with a certain shape and good morphology.

[0067] In this embodiment, the material of the initial sacrificial layer 103 includes an amorphous organic material, which includes hydrogen-containing amorphous carbon. This allows the initial sacrificial layer 103 to be subsequently modified to form a photosensitive initial functional layer, thereby enabling the formation of a patterned functional layer on the sacrificial layer.

[0068] The process for forming the initial sacrificial layer 103 includes spin coating or spray coating.

[0069] Please refer to Figure 3 An initial functional layer 104 is formed on the initial sacrificial layer 103.

[0070] The method for forming the initial functional layer 104 includes: performing a first modification treatment on the surface of the initial sacrificial layer 103 to form a sacrificial layer 105 and an initial functional layer 104 located on the sacrificial layer 105.

[0071] The initial functional layer 104 forms the subsequent functional layers.

[0072] The process for performing a first modification treatment on the surface of the initial sacrificial layer 103 includes a gas treatment process, wherein the gas in the gas treatment process includes halogen and carbon tetrafluoride gas.

[0073] The halogen and carbon tetrafluoride gases can modify the hydrogen-containing amorphous carbon into a photosensitive material.

[0074] In this embodiment, the material of the initial functional layer 104 includes a halogen-containing hydrogen-containing amorphous carbon material.

[0075] Please refer to Figure 4 A portion of the initial functional layer 104 is removed to form a graphical functional layer 106, which exposes a portion of the surface of the sacrificial layer 105.

[0076] The method for forming the functional layer 106 includes: subjecting a portion of the initial functional layer 104 to extreme ultraviolet light exposure treatment to form a modified structure (not shown); removing the modified structure to form the functional layer 106.

[0077] The process for removing the modified structure includes a wet etching process.

[0078] The material of the functional layer 106 includes a photosensitive material. In this embodiment, the material of the functional layer 106 includes a halogen-containing hydrogen-containing amorphous carbon material.

[0079] In other embodiments, the sacrificial layer and the functional layer located on the sacrificial layer are formed using separate forming processes.

[0080] In other embodiments, the material of the sacrificial layer may also include a semiconductor material, including silicon; and the material of the functional layer may include photoresist.

[0081] Please refer to Figure 5 A mask structure 107 is formed on the sacrificial layer 105 exposed by the functional layer 106 using a selective process.

[0082] The mask structure 107 is used to transfer the pattern to the layer to be etched.

[0083] In this embodiment, the selective process includes a selective deposition process.

[0084] In this embodiment, the material of the mask structure 107 includes a polar material, which includes titanium oxide.

[0085] The process parameters of the selective deposition process include: the reaction gas includes a mixture of titanium tetrachloride and oxygen, or alkoxy titanium gas.

[0086] In other embodiments, the selective process may further include a selective epitaxial process.

[0087] In other embodiments, the material of the mask structure may also include semiconductor materials, metals, other oxides or nitrides; the semiconductor material includes silicon germanium, the metal includes nickel or cobalt, the oxide includes tin oxide or silicon oxide, and the nitride includes silicon nitride.

[0088] Please refer to Figure 6 It also includes forming a compensation layer 108 on the surface of the mask structure 107, wherein the material of the compensation layer 108 is the same as the material of the mask structure 107.

[0089] In this embodiment, the process for forming the compensation layer 108 includes atomic layer deposition (ALD). ALD can form a dense and thin compensation layer 108. Therefore, the material of the compensation layer 108 can repair defects on the surface of the mask structure 107 caused by the morphology of the functional layer 106, making the morphology of the mask structure 107 more in line with design requirements.

[0090] Please refer to Figure 7 After forming the compensation layer 108, the process further includes etching the sacrificial layer 105, the transition structure, and the layer 100 to be etched using the mask structure 107 as a mask.

[0091] In this embodiment, during the process of etching the sacrificial layer 105, the transition structure and the layer to be etched 100 to form a semiconductor structure using the mask structure 107 as a mask, the materials of the mask structure 107, the sacrificial layer 105 and the transition structure are naturally consumed during the etching process, so there is no need to add a process to remove the mask structure 107, the sacrificial layer 105 and the transition structure.

[0092] Because the mask structure 107 formed on the sacrificial layer 105 using selective processing has a specific growth shape, the formed mask structure 107 has a better morphology. Therefore, it can be used as a mask pattern for semiconductor structures. As a result, the morphology of the semiconductor structure formed by the pattern transfer of the mask structure 107 is better and easier to control, which is beneficial to the improvement of semiconductor structure performance.

[0093] Accordingly, this invention also provides a semiconductor structure, please refer to [the relevant documentation]. Figure 6 ,include:

[0094] Layer to be etched: 100;

[0095] Sacrificial layer 105 located on the layer to be etched 100;

[0096] A functional layer 106 is located on the sacrificial layer 105, the functional layer 106 exposing a portion of the surface of the sacrificial layer 105;

[0097] A mask structure 107 is located on a portion of the sacrificial layer 105 exposed by the functional layer 106, the mask structure 107 being used to transfer patterns to the layer 100 to be etched.

[0098] In this embodiment, the material of the sacrificial layer 105 includes an amorphous organic material.

[0099] In other embodiments, the material of the sacrificial layer includes a semiconductor material, which includes silicon.

[0100] In this embodiment, the amorphous organic material includes hydrogen-containing amorphous carbon.

[0101] In this embodiment, the material of the functional layer 106 includes a photosensitive material.

[0102] In this embodiment, the photosensitive material includes halogen-containing hydrogen-containing amorphous carbon.

[0103] In other embodiments, the photosensitive material includes photoresist.

[0104] In this embodiment, the material of the mask structure 107 includes a polar material.

[0105] In this embodiment, the polar material includes titanium oxide.

[0106] In other embodiments, the material of the mask structure includes semiconductor materials, metals, other oxides or nitrides; the semiconductor material includes silicon germanium, the metal includes nickel or cobalt, the oxide includes tin oxide or silicon oxide, and the nitride includes silicon nitride.

[0107] In this embodiment, a compensation layer 108 is also included, located on the surface of the mask structure 107, wherein the material of the compensation layer 108 is the same as that of the mask structure 107.

[0108] In this embodiment, a transition structure is also included between the layer to be etched 100 and the sacrificial layer 105. The material of the transition structure includes one or more combinations of titanium nitride, silicon oxide, silicon nitride, silicon, and silicon oxynitride.

[0109] In this embodiment, the etchable layer 100 includes: a substrate (not shown); a device layer (not shown) located on the substrate, the device layer including an isolation structure and a device structure located within the isolation structure, the device structure including a diode, a transistor, a capacitor, an inductor, a resistor, or a metal conductive layer.

[0110] Figure 8 and Figure 9 This is a cross-sectional schematic diagram of a semiconductor structure in another embodiment of the present invention.

[0111] Please refer to Figure 8 , Figure 8 In order to be in Figure 1 The structural diagram is based on a transition structure in which a sacrificial layer 205 and a patterned functional layer 206 located on the sacrificial layer 205 are formed, and the patterned functional layer 206 exposes part of the surface of the sacrificial layer 205.

[0112] In this embodiment, the sacrificial layer 205 is made of a semiconductor material, including silicon. The process for forming the sacrificial layer 205 includes physical vapor deposition or atomic layer deposition.

[0113] The material of the functional layer 206 includes a photosensitive material.

[0114] In this embodiment, the material of the functional layer 206 includes photoresist. The process for forming the functional layer 206 includes an exposure and development process; the light source used in the exposure process includes extreme ultraviolet light.

[0115] Please refer to Figure 9 A mask structure 207 is formed on the sacrificial layer 205 exposed by the functional layer 206 using a selective process.

[0116] In this embodiment, the material of the mask structure 207 may also include semiconductor materials, metals, other oxides or nitrides; the semiconductor material includes silicon germanium, the metal includes nickel or cobalt, the oxide includes tin oxide or silicon oxide, and the nitride includes silicon nitride.

[0117] In this embodiment, the selective process includes selective deposition or selective epitaxy.

[0118] When the material of the mask structure 207 is a semiconductor material, the mask structure 207 is formed by selective epitaxy; when the material of the mask structure 207 is a metal, other oxides or nitrides, the mask structure 207 is formed by selective deposition.

[0119] Please continue to refer to this. Figure 9 A compensation layer 208 is formed on the surface of the mask structure 27, and the material of the compensation layer 208 is the same as that of the mask structure 207.

[0120] In this embodiment, the process for forming the compensation layer 208 includes atomic layer deposition (ALD). ALD can form a dense and thin compensation layer 208. Therefore, the material of the compensation layer 108 can repair defects on the surface of the mask structure 207 caused by the morphology of the functional layer 206, making the morphology of the mask structure 207 more in line with design requirements.

[0121] Next, using the mask structure 207 as a mask, the sacrificial layer 205, the transition structure, and the layer to be etched 200 are etched. Please refer to the following for the process and steps. Figure 7 This will not be elaborated upon here.

[0122] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A semiconductor structure, characterized by, The method comprises: a to-be-etched layer; a sacrificial layer on the to-be-etched layer; a functional layer on the sacrificial layer, the functional layer exposing part of the surface of the sacrificial layer, the material of the functional layer being obtained by modifying the material of the sacrificial layer; a mask structure on the part of the sacrificial layer exposed by the functional layer, the mask structure being used to transfer a pattern to the to-be-etched layer, the material of the sacrificial layer corresponding to the material of the mask structure, and the sacrificial layer being used to selectively form the mask structure on the sacrificial layer.

2. The semiconductor structure of claim 1, wherein, The material of the sacrificial layer comprises amorphous organic material.

3. The semiconductor structure of claim 2, wherein, The amorphous organic material comprises hydrogen-containing amorphous carbon.

4. The semiconductor structure of claim 2, wherein, The material of the functional layer comprises photosensitive material.

5. The semiconductor structure of claim 4, wherein, The photosensitive material comprises halogen-containing hydrogen-containing amorphous carbon.

6. The semiconductor structure of claim 1, wherein, The material of the mask structure comprises polar material.

7. The method of forming a semiconductor structure of claim 6, wherein, The polar material comprises titanium oxide.

8. The semiconductor structure of claim 1, wherein, The material of the sacrificial layer comprises semiconductor material, and the semiconductor material comprises silicon.

9. The semiconductor structure of claim 1, wherein, The material of the mask structure comprises semiconductor material, metal, other oxides or nitrides; the semiconductor material comprises silicon germanium, the metal comprises nickel or cobalt, the oxide comprises tin oxide or silicon oxide, and the nitride comprises silicon nitride.

10. The semiconductor structure of claim 4, wherein, The photosensitive material comprises photoresist.

11. The semiconductor structure of claim 1, wherein, The method further comprises: a compensation layer on the surface of the mask structure, the material of the compensation layer being the same as that of the mask structure.

12. The semiconductor structure of claim 1, wherein, The method further comprises: a transition structure between the to-be-etched layer and the sacrificial layer, the transition structure comprising one or more transition layers, and the material of the transition layer comprising one or more combinations of titanium nitride, silicon oxide, silicon nitride, silicon and silicon oxynitride.

13. The semiconductor structure of claim 1, wherein, The to-be-etched layer comprises: a substrate; a device layer on the substrate, the device layer comprising an isolation structure and a device structure in the isolation structure, and the device structure comprising a diode, a triode, a transistor, a capacitor, an inductor, a resistor or a metal conductive layer.

14. A method of forming a semiconductor structure, comprising: The method comprises: providing a to-be-etched layer; forming a sacrificial layer on the to-be-etched layer; forming a patterned functional layer on the sacrificial layer, the patterned functional layer exposing part of the surface of the sacrificial layer, and the material of the functional layer being obtained by modifying the material of the sacrificial layer; forming a mask structure on the part of the sacrificial layer exposed by the functional layer by using a selective process, the material of the sacrificial layer corresponding to the material of the mask structure, so that the mask structure is selectively formed on the sacrificial layer.

15. The method of forming a semiconductor structure of claim 14, wherein, The selective process comprises a selective deposition process.

16. The method of forming a semiconductor structure of claim 15, wherein, The material of the sacrificial layer comprises polar material, and the material of the mask structure comprises polar material.

17. The method of forming a semiconductor structure of claim 16, wherein, The material of the sacrificial layer comprises amorphous organic material, and the amorphous organic material comprises hydrogen-containing amorphous carbon.

18. The method of forming a semiconductor structure of claim 16, wherein, The polar material comprises titanium oxide.

19. The method of forming a semiconductor structure of claim 18, wherein, The process parameters of the selective deposition process comprise: a reaction gas comprising a mixed gas of titanium tetrachloride and oxygen, or an alkoxy titanium gas.

20. The method of forming a semiconductor structure of claim 17, wherein, The method for forming the sacrificial layer and the functional layer comprises: forming an initial sacrificial layer on the to-be-etched layer; performing a first modification treatment on the surface of the initial sacrificial layer to form the sacrificial layer and an initial functional layer on the sacrificial layer; and removing part of the initial functional layer to form the patterned functional layer.

21. The method of forming a semiconductor structure of claim 20, wherein, The first modification process on the initial sacrificial layer surface includes a gas treatment process, and the gas of the gas treatment process includes halogen and carbon tetrafluoride gas.

22. The method of forming a semiconductor structure of claim 20, wherein, The forming method of the functional layer includes: performing an extreme ultraviolet exposure process on part of the initial functional layer to form a modified structure; and removing the modified structure to form the functional layer.

23. The method of forming a semiconductor structure of claim 22, wherein, The process of removing the modified structure includes a wet etching process.

24. The method of forming a semiconductor structure of claim 14, wherein, The material of the functional layer includes a photosensitive material.

25. The method of forming a semiconductor structure of claim 24, wherein, The photosensitive material includes halogen-containing hydrogen-containing amorphous carbon.

26. The method of forming a semiconductor structure of claim 24, wherein, The photosensitive material includes a photoresist.

27. The method of forming a semiconductor structure of claim 26, wherein, The process of forming the functional layer includes an exposure and development process; and the light source used in the exposure process includes extreme ultraviolet light.

28. The method of forming a semiconductor structure of claim 14, wherein, The selective process includes a selective epitaxy process.

29. The method of forming a semiconductor structure of claim 14, wherein, The material of the mask structure includes a semiconductor material, a metal, other oxides or nitrides; the semiconductor material includes silicon germanium, the metal includes nickel or cobalt, the oxide includes tin oxide or silicon oxide, and the nitride includes silicon nitride.

30. The method of forming a semiconductor structure of claim 14, wherein, After forming the mask structure, the method further includes: etching the sacrificial layer and the layer to be etched by taking the mask structure as a mask.

31. The method of forming a semiconductor structure of claim 14, wherein, After forming the mask structure, the method further includes: forming a compensation layer on the surface of the mask structure, and the material of the compensation layer is the same as that of the mask structure.

32. The method of forming a semiconductor structure of claim 31, wherein, The process of forming the compensation layer includes an atomic layer deposition process.

33. The method of forming a semiconductor structure of claim 14, wherein Before forming the sacrificial layer on the layer to be etched, the method further includes: forming a transition structure on the layer to be etched, and the transition structure includes one or more transition layers, and the material of the transition layer includes one or more combinations of titanium nitride, silicon oxide, silicon nitride, silicon and silicon oxynitride.

34. The method of forming a semiconductor structure of claim 14, wherein, The layer to be etched includes: a substrate; and a device layer on the substrate, and the device layer includes an isolation structure and a device structure in the isolation structure, and the device structure includes a diode, a triode, a transistor, a capacitor, an inductor, a resistor or a metal conductive layer.

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