A polishing method, device, storage medium, module and machine

Abstract

The present invention belongs to the field of microelectronics technology, and in particular relates to a polishing method, device, storage medium, module and machine; by performing single grinding time control or predicted thickness difference control in stages in different grinding working states, the technical problem of grinding consistency of complex layered and material workpieces is solved.

Description

Technical Field

[0001] The present invention belongs to the field of microelectronic technology, and in particular relates to a polishing method, device, storage medium, module and machine. Background Art

[0002] In the polishing process of semiconductor wafers and workpieces, the consistency of processing directly affects the product yield and processing efficiency. Existing polishing control methods include time-based control methods, such as the PW (Pilot Wafer) navigation wafer method; there are also methods based on APC (Auto Process Control) automatic process control, and there are also methods based on the termination point of the termination layer EP (EndPoint).

[0003] However, as workpieces become more and more complex, the structure and hardness of the surface are unevenly distributed; the number of layers of workpieces increases, and the structure and hardness of each layer are also different; a single control method is no longer effective or the control accuracy and consistency cannot meet the process requirements. Although the grinding amount can be considered as a function of time, it is difficult to achieve with a single control strategy due to its strong nonlinear characteristics. Summary of the invention

[0004] The embodiment of the present invention discloses a polishing method, device, storage medium, module and machine. The polishing method detects the stratification and grooves of the workpiece and uses different control strategies before and after the termination layer to adjust the polishing progress, thereby avoiding the influence of the fluctuation of stratification, grooves, materials, etc. on the consistency of the workpiece.

[0005] Specifically, by acquiring the structural information of the workpiece to be polished, the polishing object is divided according to the positional relationship and quantity of the channels and media, etc.; the structural information also includes information on the channels of each repeating structural unit of the workpiece and information on the thin film layering; wherein the channels include at least a first channel and a second channel; the first channel is filled with a first filler, and the second channel is filled with a second filler.

[0006] During the polishing process, the workpiece contacts and moves relative to the polishing pad / sheet, and the workpiece and / or the polishing pad / sheet rotate around an axis perpendicular to the workpiece surface; through the grinding action of the polishing pad / sheet, the workpiece obtains a flat surface and a predetermined thickness.

[0007] By acquiring the status information of each repeated structural unit of the workpiece; wherein the thin film layering includes at least a combined dielectric layer and a single-row dielectric layer; the first dielectric layer of the combined dielectric layer is fixedly connected to the single-row dielectric layer or the first dielectric layer is filled / deposited on the single-row dielectric layer.

[0008] Furthermore, the last / outermost layer of the combined dielectric layer is the Nth dielectric layer, where N is greater than 2 or equal to 2; the Nth dielectric layer is adjacent to the polishing pad / sheet before the polishing process is started; the single-row dielectric layer is solidified / deposited on other dielectrics or substrates on the side of the workpiece away from the polishing pad / sheet; the dielectric layers of the first combined dielectric layer are sequentially solidified or deposited on the first single-row dielectric layer from the first dielectric layer to the Nth dielectric layer.

[0009] Furthermore, the first single-row dielectric layer is used as the termination layer, and the workpiece is polished using a first polishing control strategy / process; wherein the first polishing control strategy / method indirectly determines the dielectric layer that the workpiece is currently in contact with the polishing pad / plate by detecting the friction / torque between the polishing pad / plate and the workpiece, and then adjusts or controls the progress of polishing until the first single-row dielectric layer is reached.

[0010] Thereafter, a second polishing control strategy / process is used to polish the working surface consisting of the first single-row dielectric layer, the first filler and the second filler until a preset polishing time / thickness is reached.

[0011] Furthermore, the last / outermost layer of the first combined dielectric layer is solidified or deposited on the sidewalls and bottom surface of the first trench and / or the second trench; the first filler and the second filler are filled on the last / outermost layer of the first combined dielectric layer in the first trench and the second trench and fill the first trench and the second trench.

[0012] Typically, the first filler and the second filler can be the same material; wherein: the first filler and the second filler are both solid conductive materials at room temperature; the resistivity of the first filler and the second filler at room temperature is lower than the resistivity of aluminum metal at room temperature.

[0013] After aluminum metal, copper metal has become one of the main mediums of the first filler and the second filler. In addition, it can also be a conductive material, alloy or polymer with a copper content exceeding a preset ratio.

[0014] Furthermore, each layer of the first combined medium layer has a different or the same friction coefficient with the polishing pad / plate, which can be used to measure the polishing process; wherein, each two adjacent layers of the first combined medium layer have different friction coefficients / torques with the polishing pad / plate or conform to a preset distribution law.

[0015] Furthermore, a first grinding / first cleaning medium is laid or sprayed between the polishing pad / sheet and the Nth medium layer, in order to improve the corresponding grinding and cleaning effects.

[0016] In an embodiment, the first single-row dielectric layer is a dielectric layer; the dielectric layer has an ultra-low or ultra-high dielectric constant (k) to meet the requirements of different circuits.

[0017] Furthermore, in the embodiment, the first dielectric layer may be filled / deposited with NDC (SiCN) material; the second dielectric layer may be filled / deposited with nitrogen-free anti-reflective coating NFDARC material; the third dielectric layer may be filled / deposited with TiN material; and the fourth dielectric layer may be filled / deposited with Ta or TaN material.

[0018] Furthermore, the first polishing control strategy / process can use a Pilot navigation method or an End Point method to achieve relevant thickness control; wherein the Pilot navigation method adjusts the polishing time PT of subsequent materials or wafers according to the thickness of the navigation wafer; the End Point method implements polishing with the first single-row dielectric layer as the termination layer SL.

[0019] For the case where the feature pattern of the workpiece is 28 nm or less, due to the limitation of the process level, the End Point method also includes polishing and / or cleaning of the first single-row dielectric layer.

[0020] Furthermore, the second polishing control strategy / process is implemented using an APC automatic process control system; the APC system predicts the preset parameters or expected removal rate PRR of the next workpiece based on the actual parameters of the previous workpiece or the current removal rate RRR, and polishes the workpiece according to the preset parameters or expected removal rate PRR.

[0021] Furthermore, the second polishing control strategy / process only handles the polishing work / control of the first single-row dielectric layer, and the second polishing control strategy / process does not participate in the polishing work of other surfaces / working surfaces of the workpiece; the second polishing control strategy / process or APC system obtains / corrects the grinding parameters and / or the structural information of the workpiece by predicting the changes in the removal rate RR of the first single-row dielectric layer.

[0022] The embodiment of the present invention further discloses a polishing device, which includes a data acquisition / big data unit, an analysis and scheduling unit, a first control unit, a second control unit and an execution unit.

[0023] Among them, the data acquisition / big data unit obtains the structural information of the workpiece to be polished; the analysis and scheduling unit obtains the status information of each repeated structural unit of the workpiece; the first control unit uses the first single-row dielectric layer as the termination layer and adopts the first polishing control strategy / process to polish the workpiece; the second control unit then adopts the second polishing control strategy / process to polish the working surface composed of the first single-row dielectric layer, the first filler and the second filler until the preset polishing time / thickness is reached.

[0024] The various components of the polishing device adopt the structure, logical relationship and control strategy corresponding to the method of the present invention, and the relevant control method and polishing process are not repeated again.

[0025] It should be noted that the terms "first", "second" and similar terms used in this article are only for describing the various components in the technical solution, and do not constitute a limitation of the technical solution, nor can they be understood as an indication or suggestion of the importance of the corresponding elements; elements with "first", "second" and similar terms indicate that the corresponding technical solution contains at least one of the element. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solution of the present invention and facilitate further understanding of the technical effects, technical features and purposes of the present invention, the present invention is described in detail below in conjunction with the accompanying drawings. The accompanying drawings constitute an essential part of the specification and are used together with the embodiments of the present invention to illustrate the technical solution of the present invention, but do not constitute a limitation to the present invention.

[0027] The same reference numerals in the accompanying drawings represent the same components, specifically:

[0028] Figure 1 Schematic diagram of cross-section of each repeating structural unit of a workpiece according to an embodiment of the present invention;

[0029] Figure 2 This is a schematic diagram of tracking and measuring the friction resistance torque of different medium layers according to an embodiment of the present invention;

[0030] Figure 3 A schematic diagram of an APC automatic process control strategy according to an embodiment of the present invention;

[0031] Figure 4 This is a data table comparing the embodiment of the present invention with the fixed time method and the APC method alone;

[0032] Figure 5 This is a schematic diagram of the polishing process of an embodiment of the present invention;

[0033] Figure 6 It is a schematic diagram of the structure of the device according to an embodiment of the present invention.

[0034] in:

[0035] 10- Immediately preceding step,

[0036] 20-Data collection / big data acquisition steps,

[0037] 30-Analysis of scheduling steps,

[0038] 40-First polishing step,

[0039] 50 - second polishing step,

[0040] 60-immediately following step;

[0041] 100-a first single-row dielectric layer;

[0042] 101- first dielectric layer,

[0043] 102- second dielectric layer,

[0044] 103- third dielectric layer,

[0045] 104- fourth dielectric layer;

[0046] 105-first filler,

[0047] 106 - second filling;

[0048] 111-repeating structural units of the workpiece;

[0049] 200-polishing target thickness (points);

[0050] 201- Second polishing control strategy / process adjustment range,

[0051] 202-termination layer,

[0052] 203-first combined dielectric layer;

[0053] 222- Distribution law of friction coefficient (torque) between each medium constituting the workpiece and the polishing pad / sheet;

[0054] 301-first channel,

[0055] 302-second channel;

[0056] 401-Data Collection / Big Data Unit,

[0057] 402-Analysis and Scheduling Unit,

[0058] 403- first control unit,

[0059] 404 - second control unit,

[0060] 405-Execution unit;

[0061] 501-Structural information of the workpiece to be polished,

[0062] 502-Workpiece polishing status information. DETAILED DESCRIPTION

[0063] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. Of course, the specific embodiments described below are only for explaining the technical solutions of the present invention, rather than for limiting the present invention. In addition, the parts described in the embodiments or the accompanying drawings are only examples of the relevant parts of the present invention, rather than the whole of the present invention.

[0064] like Figure 6As shown, by acquiring the structural information of the workpiece to be polished; after the polishing process is started, the workpiece contacts and moves relative to the polishing pad / plate, and the workpiece and / or the polishing pad / plate rotates around an axis perpendicular to the workpiece surface.

[0065] like Figure 1 and Figure 6 The structural information 501 includes information about the channels of each repeating structural unit 111 of the workpiece and information about the thin film layering; wherein the channels include a first channel 301 and a second channel 302 ; the first channel 301 is filled with a first filler 105 , and the second channel 302 is filled with a second filler 106 .

[0066] The status information of each repeating structural unit 111 of the workpiece is obtained; wherein the thin film layering includes a combined dielectric layer 203 and a single-row dielectric layer 100; the first dielectric layer 101 of the combined dielectric layer 203 is fixedly connected to the single-row dielectric layer 100 or the first dielectric layer 101 is filled / deposited on the single-row dielectric layer 100.

[0067] The last / outermost layer of the combined dielectric layer 203 is the fourth dielectric layer 104; the fourth dielectric layer 104 is adjacent to the polishing pad / sheet before the polishing process is started; the single-row dielectric layer 100 is solidified / deposited on other dielectrics or substrates on the side of the workpiece away from the polishing pad / sheet; the dielectric layers of the first combined dielectric layer 203 are solidified or deposited on the first single-row dielectric layer 100 in sequence from the first dielectric layer 101 to the fourth dielectric layer 104.

[0068] Among them, Figure 1 and Figure 3 As shown, the first single-row dielectric layer 100 is used as the termination layer 202, and the workpiece is polished using a first polishing control strategy / process; wherein the first polishing control strategy / method indirectly determines the dielectric layer that the workpiece is currently in contact with the polishing pad / sheet by detecting the friction / torque between the polishing pad / sheet and the workpiece.

[0069] Furthermore, the first single-row dielectric layer 100 is polished according to the first polishing control strategy / process; and the second polishing control strategy / process is used to polish the working surface composed of the first single-row dielectric layer 100, the first filler 105 and the second filler 106 until the preset polishing time / thickness is reached.

[0070] The last / outermost layer of the first combined dielectric layer 203 is solidified or deposited on the sidewalls and bottom surface of the first trench 301 and / or the second trench 302; the first filler 105 and the second filler 106 are filled on the last / outermost layer of the first combined dielectric layer 203 in the first trench 301 and the second trench 302 and fill the first trench 301 and the second trench 302.

[0071] Furthermore, the first filler 105 and the second filler 106 may be made of the same material.

[0072] Furthermore, both the first filler 105 and the second filler 106 can be solid conductive materials at room temperature; the resistivity of the first filler 105 and the second filler 106 at room temperature is lower than the resistivity of aluminum metal at room temperature.

[0073] Furthermore, the first filler 105 and the second filler 106 are metallic copper or a conductive material, alloy or polymer containing copper exceeding a preset ratio.

[0074] Furthermore, if Figure 2 As shown, the friction coefficient between each layer of the first composite dielectric layer 203 and the polishing pad / plate is different or the same; the friction coefficient / torque between each two adjacent dielectric layers of the first composite dielectric layer 203 and the polishing pad / plate is different or conforms to a preset distribution rule 222 .

[0075] Furthermore, a first grinding / first cleaning medium may be laid or sprayed between the polishing pad / sheet and the fourth medium layer 104 .

[0076] Furthermore, if Figure 1 As shown, the first single-row dielectric layer 100 may be a dielectric layer; the dielectric layer may have an ultra-low or ultra-high dielectric constant k, which is used to satisfy two completely opposite types of circuits.

[0077] Specifically, Figure 1 As shown, the first dielectric layer 101 can be filled / deposited with NDC (SiCN) material; the second dielectric layer 102 can be filled / deposited with nitrogen-free anti-reflective coating NFDARC material; the third dielectric layer 103 can be filled / deposited with TiN material; and the fourth dielectric layer 104 can be filled / deposited with Ta or TaN material.

[0078] Furthermore, the first polishing control strategy / process adopts a Pilot navigation method or an End Point method to achieve relevant thickness control; the Pilot navigation method adjusts the polishing time PT of subsequent materials or wafers according to the thickness of the navigation wafer; the End Point method uses the first single-row dielectric layer 100 as the termination layer SL for polishing.

[0079] Furthermore, for the feature patterns of the workpiece that are constructed using a process of 28 nm or less, the End Point method also includes polishing and / or cleaning the first single-row dielectric layer 100 .

[0080] Furthermore, the second polishing control strategy / process is implemented using an APC automatic process control system; the APC system predicts the preset parameters or expected removal rate PRR of the next workpiece based on the actual parameters of the previous workpiece or the current removal rate RRR, and polishes the workpiece according to the preset parameters or expected removal rate PRR.

[0081] Furthermore, the second polishing control strategy / process only handles the polishing work / control of the first single-row dielectric layer 100, and the second polishing control strategy / process does not participate in the polishing work of other surfaces / working surfaces of the workpiece; the second polishing control strategy / process or APC system obtains / corrects the grinding parameters and / or the structural information of the workpiece by predicting the changes in the removal rate RR of the first single-row dielectric layer 100.

[0082] like Figure 6 The polishing device shown includes a data acquisition / big data unit 401 , an analysis and scheduling unit 402 , a first control unit 403 , a second control unit 404 and an execution unit 405 .

[0083] The data acquisition / big data unit 401 obtains structural information 501 of the workpiece to be polished; wherein, after the polishing process is started, the workpiece contacts and moves relative to the polishing pad / sheet, and the workpiece and / or the polishing pad / sheet rotates around an axis perpendicular to the workpiece surface.

[0084] like Figure 1 and Figure 6 The structural information 501 includes information about the channels of each repeating structural unit 111 of the workpiece and information about the thin film layering; wherein the channels include a first channel 301 and a second channel 302 ; the first channel 301 is filled with a first filler 105 , and the second channel 302 is filled with a second filler 106 .

[0085] The analysis and scheduling unit 402 obtains the status information of each repeated structural unit 111 of the workpiece; wherein the thin film layer includes a combined dielectric layer 203 and a single-row dielectric layer 100 .

[0086] The first dielectric layer 101 of the combined dielectric layer 203 is fixedly connected to the single-row dielectric layer 100 or the first dielectric layer 101 is filled / deposited on the single-row dielectric layer 100; the last / outermost layer of the combined dielectric layer 203 is the fourth dielectric layer 104; the fourth dielectric layer 104 is adjacent to the polishing pad / sheet before the polishing process is started; the single-row dielectric layer 100 is solidified / deposited on other dielectrics or substrates on the side of the workpiece away from the polishing pad / sheet; the dielectric layers of the first combined dielectric layer 203 are sequentially solidified or deposited on the first single-row dielectric layer 100 until the fourth dielectric layer 104.

[0087] like Figure 2 , Figure 3The first control unit 403 uses the first single-row dielectric layer 100 as the termination layer 202 and adopts the first polishing control strategy / process to polish the workpiece; the first polishing control strategy / method indirectly determines the dielectric layer that the workpiece is currently in contact with the polishing pad / sheet by detecting the friction / torque between the polishing pad / sheet and the workpiece.

[0088] Further, the first control unit 403 polishes to the first single-row dielectric layer 100 according to the first polishing control strategy / process; the second control unit 404 then adopts the second polishing control strategy / process to polish the working surface composed of the first single-row dielectric layer 100, the first filler 105 and the second filler 106 until the preset polishing time / thickness is reached; wherein the execution unit 405 implements the polishing action according to the first polishing control strategy / process or the second polishing control strategy / process.

[0089] in, Figure 2 This is a graph of the end point detection EPD (End Point Detect). It uses the difference in friction (or torque) when the wafer is ground to the interface of different materials to capture the torque signal of the grinding disk on the machine. The horizontal axis is the grinding time S (seconds), and the vertical axis is the torque signal (unit omitted). Most of the grinding is completed through the first polishing control strategy / process. The advantage of using EPD control in this step is that it can cover the difference in removal rate RR (Removal Rate) of different materials, and finally stop at the ULK / Cu interface.

[0090] Furthermore, if Figure 1 As shown, the last / outermost layer of the first combined dielectric layer 203 is solidified or deposited on the sidewalls and bottom surfaces of the first trench 301 and / or the second trench 302; the first filler 105 and the second filler 106 are filled on the last / outermost layer of the first combined dielectric layer 203 in the first trench 301 and the second trench 302 and fill the first trench 301 and the second trench 302;

[0091] Furthermore, the first filler 105 and the second filler 106 can be metallic copper or a conductive material, alloy or polymer containing copper exceeding a preset proportion; the friction coefficient between each layer of the first combined dielectric layer 203 and the polishing pad / sheet is different or the same; the friction coefficient / torque between each two adjacent dielectric layers of the first combined dielectric layer 203 and the polishing pad / sheet is different or conforms to a preset distribution law 222; a first grinding / first cleaning medium is laid or sprayed between the polishing pad / sheet and the fourth dielectric layer 104.

[0092] Furthermore, the first dielectric layer 101 is filled / deposited with NDC (SiCN) material; the second dielectric layer 102 is filled / deposited with nitrogen-free anti-reflective coating NFDARC material; the third dielectric layer 103 is filled / deposited with TiN material; and the fourth dielectric layer 104 is filled / deposited with Ta or TaN material.

[0093] Among them, the first polishing control strategy / process adopts the Pilot navigation method or the End Point method to achieve relevant thickness control; the Pilot navigation method adjusts the polishing time PT of subsequent materials or wafers according to the thickness of the navigation wafer; the EndPoint method uses the first single-row dielectric layer 100 as the termination layer SL for polishing.

[0094] Furthermore, the second polishing control strategy / process is implemented using an APC automatic process control system; the APC system predicts the preset parameters or expected removal rate PRR of the next workpiece based on the actual parameters of the previous workpiece or the current removal rate RRR, and polishes the workpiece according to the preset parameters or the expected removal rate PRR; the second polishing control strategy / process only handles the polishing work / control of the first single-row dielectric layer 100, and the second polishing control strategy / process does not participate in the polishing work of other surfaces / working surfaces of the workpiece; the second polishing control strategy / process or the APC system obtains / corrects the grinding parameters and / or the structural information of the workpiece by predicting the changes in the removal rate RR of the first single-row dielectric layer 100.

[0095] like Figure 3 Among them, copper CMP maintains the thickness of metal copper in the groove, which depends on two factors: the previous value and the after value; the previous value is the difference in the groove depth of each wafer, and the after value is the difference in the removal rate RR (Removal Rate) of copper CMP, which leads to the difference in the final copper thickness in the groove.

[0096] APC has Feed Forward: The previous value of each wafer is told to APC through previous value measurement. The previous value - copper CMP target T (Target) APC calculates the grinding amount of each wafer. This is the feed forward process.

[0097] In addition, APC feedback: APC assigns the current wafer grinding time based on the removal rate RR (Removal Rate) of the previous wafer and the grinding amount of the current wafer, and then obtains the copper thickness through online measurement on the machine, and compares it with the target value T (Target) to obtain a new removal rate RR (Removal Rate) and assign it to the next wafer. This is the feedback process.

[0098] In addition, the process of correcting the removal rate RR (Removal Rate) piece by piece and finally reaching a copper thickness target value T (Target) is abbreviated as: R2R (Run to Run).

[0099] like Figure 4 , for 28nm copper CMP (Chemical Mechanical Polishing) THK SPC used a new method to terminate the layer combined with APC thickness data, and obtained better data compared to a single control method.

[0100] In the embodiment, first, the main polishing process MP (Main Polish) uses a ULK (Ultra Low K) layer as a stop layer, and uses a method of detecting the change in the polishing friction of different film layers to control the polishing progress.

[0101] The second step is to use the APC method in the over polishing OP (Over Polish) to control: the trench depth TD (Trench Depth) and the thickness information of the cap layer CL (Cap Layer) before measuring each wafer, and then obtain the removal amount WRA (Wafer Removal Amount) of each wafer.

[0102] The actual ULK removal rate RR (Removal Rate) is calculated based on the difference between the actual thickness of the current sheet after grinding and the target value, and then the RR data is fed back to the predicted RR data of the next sheet to achieve the purpose of adjusting the over-polishing OP.

[0103] Thus, the present invention solves the technical problem of grinding consistency of workpieces with complex layers and materials by executing single grinding time control or predicted thickness difference control in different grinding working states in stages.

[0104] It should be noted that the above embodiments are only for more clearly illustrating the technical solutions of the present invention. Those skilled in the art will understand that the implementation methods of the present invention are not limited to the above contents, and obvious changes, replacements or substitutions based on the above contents do not exceed the scope of the technical solutions of the present invention; other implementation methods will also fall within the scope of the present invention without departing from the concept of the present invention.

Claims

1. A polishing method, characterized in that: The method comprises: obtaining structural information (501) of a workpiece to be polished; wherein, after the polishing process is started, the workpiece contacts and moves relative to the polishing pad / sheet, and the workpiece and / or the polishing pad / sheet rotate around an axis perpendicular to the surface of the workpiece; the structural information (501) comprises information on the channels of each repeating structural unit (111) of the workpiece and information on the thin film layering; wherein the channels at least comprise a first channel (301) and a second channel (302); the first channel (301) is filled with a first filler (105); The second channel (302) is filled with a second filler (106); state information of each repeating structural unit (111) of the workpiece is obtained; wherein the thin film layering comprises at least a combined dielectric layer (203) and a single-row dielectric layer (100); the first dielectric layer (101) of the combined dielectric layer (203) is fixedly connected to the single-row dielectric layer (100) or the first dielectric layer (101) is filled / deposited on the single-row dielectric layer (100); the last / outermost layer of the combined dielectric layer (203) is the Nth dielectric layer, N is greater than or equal to 2; the Nth medium layer is adjacent to the polishing pad / sheet before the polishing process is started; the single-row medium layer (100) is solidified / deposited on other medium or substrate on the side of the workpiece away from the polishing pad / sheet; each layer of the medium of the first combined medium layer (203) is sequentially solidified or deposited on the first single-row medium layer (100) from the first medium layer (101) to the Nth medium layer; the first single-row medium layer (100) is used as the termination layer (202), and the workpiece is polished using a first polishing control strategy / process; wherein the first polishing control strategy / method indirectly determines the medium layer of the workpiece currently in contact with the polishing pad / sheet by detecting the friction force / torque between the polishing pad / sheet and the workpiece; polishing to the first single-row medium layer (100) according to the first polishing control strategy / process; and then polishing the working surface composed of the first single-row medium layer (100), the first filler (105) and the second filler (106) using a second polishing control strategy / process until a preset polishing time / thickness is reached.

2. The polishing method according to claim 1, wherein: The last / outermost layer of the first combined dielectric layer (203) is solidified or deposited on the sidewalls and bottom surfaces of the first trench (301) and / or the second trench (302); the first filler (105) and the second filler (106) are filled on the last / outermost layer of the first combined dielectric layer (203) in the first trench (301) and the second trench (302) and fill the first trench (301) and the second trench (302); the first filler (105) and the second filler (106) are made of the same material.

3. The polishing method according to claim 2, wherein: The first filler (105) and the second filler (106) are both solid conductive materials at room temperature; the resistivity of the first filler (105) and the second filler (106) at room temperature is lower than the resistivity of aluminum metal at room temperature.

4. The polishing method according to claim 3, wherein: The first filler (105) and the second filler (106) are metallic copper or a conductive material, alloy or polymer containing copper exceeding a preset proportion.

5. The polishing method according to any one of claims 1 to 4, wherein: The friction coefficient between each layer of the first combined medium layer (203) and the polishing pad / plate is different or the same; the friction coefficient / torque between each two adjacent layers of the first combined medium layer (203) and the polishing pad / plate is different or conforms to a preset distribution law (222).

6. The polishing method according to claim 5, wherein: A first grinding / first cleaning medium is laid or sprayed between the polishing pad / sheet and the Nth medium layer.

7. The polishing method according to claim 6, wherein: The first single-row dielectric layer (100) is a dielectric layer; the dielectric layer has an ultra-low or ultra-high dielectric constant (k).

8. The polishing method according to claim 6 or 7, wherein: The first dielectric layer (101) is filled / deposited with NDC (SiCN) material; the second dielectric layer (102) is filled / deposited with nitrogen-free anti-reflection coating NFDARC material; the third dielectric layer (103) is filled / deposited with TiN material; and the fourth dielectric layer (104) is filled / deposited with Ta or TaN material.

9. The polishing method according to claim 8, wherein: The first polishing control strategy / process adopts a Pilot navigation method or an End Point method to achieve relevant thickness control; the Pilot navigation method adjusts the polishing time PT of subsequent materials or wafers according to the thickness of the navigation wafer; the End Point method uses the first single-row dielectric layer (100) as the termination layer SL.

10. The polishing method according to claim 9, wherein: The characteristic pattern of the workpiece is constructed using a 28nm or lower process; the End Point method also includes polishing and / or cleaning the first single-row dielectric layer (100).

11. The polishing method according to claim 9 or 10, wherein: The second polishing control strategy / process is implemented using an APC automatic process control system; the APC system predicts the preset parameters or expected removal rate PRR of the next workpiece based on the actual parameters of the previous workpiece or the current removal rate RRR, and polishes the workpiece based on the preset parameters or expected removal rate PRR.

12. The polishing method according to claim 11, wherein: The second polishing control strategy / process only processes the polishing work / control of the first single-row dielectric layer (100), and the second polishing control strategy / process does not participate in the polishing work of other surfaces / working surfaces of the workpiece; the second polishing control strategy / process or the APC system obtains / corrects the grinding parameters and / or the structural information of the workpiece by predicting the change of the removal rate RR of the first single-row dielectric layer (100).

13. A polishing device comprising: A data acquisition / big data unit (401), an analysis and scheduling unit (402), a first control unit (403), a second control unit (404) and an execution unit (405); the data acquisition / big data unit (401) acquires structural information (501) of a workpiece to be polished; wherein, after the polishing process is started, the workpiece contacts and moves relative to the polishing pad / sheet, and the workpiece and / or the polishing pad / sheet rotate around an axis perpendicular to the surface of the workpiece; the structural information (501) includes information on channels of each repeated structural unit (111) of the workpiece and information on thin film stratification; wherein the channels at least include a first channel (301) and a second channel (30 2); the first trench (301) is filled with a first filler (105), and the second trench (302) is filled with a second filler (106); the analysis and scheduling unit (402) obtains status information of each repeating structural unit (111) of the workpiece; wherein the thin film layering comprises at least a combined dielectric layer (203) and a single-row dielectric layer (100); the first dielectric layer (101) of the combined dielectric layer (203) is fixedly connected to the single-row dielectric layer (100) or the first dielectric layer (101) is filled / deposited on the single-row dielectric layer (100); the last / outermost layer of the combined dielectric layer (203) is the Nth dielectric layer, N is greater than or equal to 2; the Nth medium layer is adjacent to the polishing pad / sheet before the polishing process is started; the single-row medium layer (100) is solidified / deposited on other media or substrates on the side of the workpiece away from the polishing pad / sheet; each layer of the first combined medium layer (203) is solidified or deposited on the first single-row medium layer (100) in sequence from the first medium layer (101) to the Nth medium layer; the first control unit (403) uses the first single-row medium layer (100) as the termination layer (202) and adopts a first polishing control strategy / process to polish the workpiece; wherein the first polishing control strategy / method detects the polishing pad The friction force / torque between the polishing pad / sheet and the workpiece is used to indirectly determine the dielectric layer that the workpiece is currently in contact with the polishing pad / sheet; the first control unit (403) polishes to the first single-row dielectric layer (100) according to the first polishing control strategy / process; the second control unit (404) then adopts the second polishing control strategy / process to polish the working surface composed of the first single-row dielectric layer (100), the first filler (105) and the second filler (106) until a preset polishing time / thickness is reached; wherein the execution unit (405) performs the polishing action according to the first polishing control strategy / process or the second polishing control strategy / process.

14. The device as claimed in claim 13, wherein: the last / outermost layer of the first combined dielectric layer (203) is solidified or deposited on the sidewalls and bottom surfaces of the first trench (301) and / or the second trench (302); the first filler (105) and the second filler (106) are filled on the last / outermost layer of the first combined dielectric layer (203) in the first trench (301) and the second trench (302) and fill the first trench (301) and the second trench (302); the first filler (105) and the second filler (106) are metallic copper or conductive materials, alloys or polymers containing copper exceeding a preset ratio; each layer of the first combined dielectric layer (203) is connected to the first trench (301) and the second trench (302). The friction coefficients of the polishing pad / sheet are different or the same; the friction coefficients / torques of each two adjacent layers of the first combined medium layer (203) and the polishing pad / sheet are different or conform to a preset distribution law (222); a first grinding / first cleaning medium is laid or sprayed between the polishing pad / sheet and the Nth medium layer; the first medium layer (101) is filled / deposited with NDC (SiCN) material; the second medium layer (102) is filled / deposited with nitrogen-free anti-reflective coating NFDARC material; the third medium layer (103) is filled / deposited with TiN material; the fourth medium layer (104) is filled / deposited with Ta or TaN material; the first polishing control strategy / process adopts a Pilot navigation method or an End The Pilot navigation method realizes relevant thickness control; the Pilot navigation method adjusts the polishing time PT of the subsequent material or wafer according to the thickness of the navigation wafer; the End Point method uses the first single-row dielectric layer (100) as the termination layer SL; the second polishing control strategy / process is implemented by an APC automatic process control system; the APC system predicts the preset parameters or expected removal rate PRR of the next workpiece according to the actual parameters of the previous workpiece or the current removal rate RRR, and polishes the workpiece according to the preset parameters or expected removal rate PRR; the second polishing control strategy / process only handles the polishing work / control of the first single-row dielectric layer (100), and the second polishing control strategy / process does not participate in the polishing work of other surfaces / working surfaces of the workpiece; the second polishing control strategy / process or APC system obtains / corrects the grinding parameters and / or the structural information of the workpiece by predicting the change of the removal rate RR of the first single-row dielectric layer (100).

15. A computer storage medium comprising: A storage medium for storing a computer program; When the computer program is executed by a microprocessor, the polishing method according to any one of claims 1 to 12 is implemented.

16. A cleaning and polishing module, comprising: The computer storage medium of claim 15.

17. A micro-device machine, comprising: The computer storage medium of claim 15 and / or the cleaning and polishing module of claim 16.

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