Platen structure for plasma cleaning apparatus

Abstract

The application provides a pressing frame structure for a plasma cleaning device. The plasma cleaning device comprises an upper electrode and a lower electrode arranged oppositely, and the plasma cleaning device can clean a semiconductor package structure; the pressing frame structure is used for pressing on the edge of the semiconductor package structure located on the lower electrode. The pressing frame structure is provided with an opening for exposing the central region of the semiconductor package structure; the pressing frame structure comprises a metal plate part and an insulating shell, and the insulating shell covers the metal plate part.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a pressure frame structure for plasma cleaning equipment. Background Technology

[0002] In common semiconductor packaging technologies, the surfaces of some intermediate structures need to be cleaned during the packaging process to remove impurities. Plasma cleaning equipment is typically used to clean the surfaces of intermediate structures. The plasma generated by the plasma cleaning equipment impacts and etches the surfaces of the intermediate structures, removing impurities.

[0003] The area of ​​the intermediate structure is generally large, and the edge areas are prone to warping. Therefore, a pressure frame structure is typically placed at the edge of the intermediate structure. Existing pressure frame structures include a metal plate and an oxide insulating layer plated on the surface of the metal plate. This results in a surface-insulating and heavy pressure frame structure. However, the pressure frame structure has good thermal conductivity, and the heat generated by plasma impacts on the intermediate structure accumulates near the pressure frame structure. This causes the plasma to accumulate near the pressure frame structure, leading to uneven plasma distribution on the surface of the intermediate structure. Consequently, different areas of the intermediate structure surface are etched at different rates, resulting in poor etching uniformity. Summary of the Invention

[0004] This application provides a pressing frame structure for a plasma cleaning apparatus. The plasma cleaning apparatus includes an upper electrode and a lower electrode disposed opposite to each other, and the plasma cleaning apparatus is capable of cleaning a semiconductor package structure; the pressing frame structure is used to press against the edge of the semiconductor package structure located on the lower electrode;

[0005] The pressure frame structure has an opening for exposing the central region of the semiconductor package structure; the pressure frame structure includes a metal plate portion and an insulating shell, the insulating shell covering the metal plate portion.

[0006] In one embodiment, the insulating shell is made of an inorganic non-metallic material.

[0007] In one embodiment, the insulating housing is made of glass.

[0008] In one embodiment, the insulating housing is assembled from multiple insulating plates.

[0009] In one embodiment, at least one end of the insulating plate portion is provided with a splicing structure, the splicing structure including a matching protrusion or recess; the end of the insulating plate portion provided with the splicing structure is spliced ​​to the adjacent end of the insulating plate portion provided with the splicing structure through the splicing structure, and the end of the insulating plate portion not provided with the splicing structure abuts against the adjacent end of the insulating plate portion not provided with the splicing structure.

[0010] In one embodiment, among the plurality of insulating plate portions, two of the insulating plate portions have a splicing structure at one end and no splicing structure at the other end.

[0011] In one embodiment, the end of the insulating plate portion without the splicing structure is formed with an abutting surface, the abutting surface of the insulating plate portion abutting against the abutting surface of the adjacent insulating plate portion, the abutting surface being located at the bottom of the metal plate portion, and the abutting surface extending longitudinally.

[0012] In one embodiment, the thickness of the insulating shell ranges from 1 mm to 2 mm.

[0013] In one embodiment, an adhesive layer is provided between the metal plate portion and the insulating housing.

[0014] In one embodiment, the lower electrode is provided with an annular fixing portion for securing the semiconductor package structure; the inner side of the pressure frame structure is provided with a notch portion, the notch portion surrounds the opening, and the notch portion is located at the bottom of the pressure frame structure; the notch portion is used to abut against the annular fixing portion.

[0015] The main technical effects achieved by the embodiments of this application are:

[0016] The frame structure for plasma cleaning equipment provided in this application embodiment presses against the edge of the semiconductor package structure to prevent edge warping. The opening of the frame structure exposes the central area of ​​the surface to be cleaned on the semiconductor package structure. The plasma generated by the plasma cleaning equipment can clean the central area of ​​the surface to be cleaned on the semiconductor package structure. The frame structure includes a metal plate and an insulating shell covering the metal plate. The insulating shell insulates the metal plate from the lower electrode of the plasma cleaning equipment, thus not affecting the operation of the plasma cleaning equipment. The insulating shell has poor thermal conductivity, so the heat generated when the plasma impacts the surface of the semiconductor package structure will not accumulate near the insulating shell, which helps to make the plasma evenly distributed on the surface of the semiconductor package structure, thereby improving the uniformity of etching in different areas of the surface of the semiconductor package structure. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the pressure frame structure provided in an exemplary embodiment of this application when used in a plasma cleaning equipment;

[0018] Figure 2 This is a top view of a compression frame structure provided in an exemplary embodiment of this application;

[0019] Figure 3 yes Figure 2 The exploded schematic diagram is obtained by cutting the pressure frame structure along the straight line AA.

[0020] Figure 4 yes Figure 2 The cross-sectional view is obtained by cutting the pressure frame structure along the straight line AA. Specific Implementation

[0021] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0022] The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The singular forms “a,” “the,” and “the” used in this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0023] It should be understood that although the terms first, second, third, etc., may be used in this application to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, without departing from the scope of this application, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the word "if" as used herein may be interpreted as "when," "when," or "in response to determination."

[0024] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0025] This application provides a pressure frame structure for a plasma cleaning equipment. See also... Figure 1 The plasma cleaning equipment 100 includes a cavity 101, within which an upper electrode 102 and a lower electrode 103 are disposed, with the upper electrode 102 and the lower electrode 103 arranged opposite to each other. The plasma cleaning equipment 100 can clean impurities from the surface of the semiconductor packaging structure 104.

[0026] The semiconductor package structure 104 can be an intermediate structure in the chip packaging process. The semiconductor package structure 104 includes multiple chips to be packaged spaced apart. The surface of the semiconductor package structure 104 is cleaned by using a plasma cleaning device, which can remove impurities from the surface of the semiconductor package structure 104. This results in better adhesion between other film layers formed on the surface of the semiconductor package structure 104 and the semiconductor package structure 104, helping to avoid delamination or cracking.

[0027] When cleaning the semiconductor package structure 104 using a plasma cleaning device, the semiconductor package structure 104 is placed on the lower electrode 103, with the surface of the semiconductor package structure 104 to be cleaned facing away from the lower electrode 103 and towards the upper electrode 102. The plasma generated by the plasma cleaning device impacts and etches the surface of the semiconductor package structure 104, causing impurities in the semiconductor package structure 104 to detach from its surface.

[0028] The pressure frame structure 10 is used to press against the edge of the semiconductor package structure 104 located on the lower electrode 103, preventing the edge region of the semiconductor package structure 104 from warping. See also Figures 2 to 4 The pressure frame structure 10 has an opening 14 for exposing the central region of the semiconductor package structure 104, which is the area to be cleaned. The pressure frame structure 10 includes a metal plate portion 11 and an insulating shell 12, the insulating shell 12 covering the metal plate portion 11.

[0029] The pressure frame structure 10 provided in this application embodiment for a plasma cleaning equipment can prevent the edge of the semiconductor package structure from warping when pressed against the edge of the semiconductor package structure. The opening 14 of the pressure frame structure 10 exposes the central region of the surface of the semiconductor package structure 104 to be cleaned. The plasma generated by the plasma cleaning equipment can clean the central region of the surface of the semiconductor package structure 104 to be cleaned by impacting it. The pressure frame structure 10 includes a metal plate portion 11 and an insulating shell 12 covering the metal plate portion 11. The insulating shell 12 insulates the metal plate portion 11 from the lower electrode of the plasma cleaning equipment, so as not to affect the operation of the plasma cleaning equipment. The insulating shell 12 has poor thermal conductivity, so the heat generated when the plasma impacts the surface of the semiconductor package structure will not accumulate near the insulating shell 12, which helps to make the plasma evenly distributed on the surface of the semiconductor package structure, thereby improving the uniformity of etching in different areas of the surface of the semiconductor package structure.

[0030] In this embodiment, "the insulating shell 12 covers the metal plate portion 11" means that the metal plate portion 11 is completely covered by the insulating shell 12, and the surface of the metal plate portion 11 is not exposed to the insulating shell 12. The metal plate portion 11 includes a top wall, a bottom wall, an inner side wall, and an outer side wall, and the insulating shell 12 completely covers the top wall, bottom wall, inner side wall, and outer side wall of the metal plate portion 11.

[0031] Figure 2 In the illustrated embodiment, the opening 14 is approximately rectangular in shape. The semiconductor package structure includes a central region and an edge region surrounding the central region. A chip is disposed in the central region, while no chip is disposed in the edge region. When the clamping frame structure 10 is pressed onto the semiconductor package structure, the clamping frame structure 10 presses down on the edge region of the semiconductor package structure, and the opening 14 exposes the central region of the semiconductor package structure. The size and shape of the central region of the semiconductor package structure may be approximately the same as that of the opening 14. In other embodiments, the opening 14 may also be other shapes, such as circular, irregular, etc.

[0032] In one embodiment, see again Figure 1 The lower electrode 103 is provided with an annular fixing portion 105 for securing the semiconductor package structure 104. See again. Figure 4 The pressure frame structure 10 has a notch 15 on its inner side, which surrounds the opening 14 and is located at the bottom of the pressure frame structure 10. The notch 15 is used to abut against the annular fixing part 105. When the semiconductor package structure 104 is placed on the lower electrode 103, the semiconductor package structure 104 is locked in the annular fixing part 105, which can prevent the semiconductor package structure 104 from moving on the lower electrode 103. By providing the notch 15 on the inner side of the pressure frame structure 10, when the pressure frame structure 10 presses against the semiconductor package structure 104, the sidewall of the notch 15 abuts against the inner side of the annular fixing part 105, and the top wall of the notch 15 (that is, part of the bottom wall of the pressure frame structure 10) abuts against the top surface of the annular fixing part 105. This can prevent the pressure frame structure 10 from moving relative to the semiconductor package structure 104, thus preventing the pressure frame structure 10 from failing to effectively press the edge of the semiconductor package structure 104.

[0033] In one embodiment, the insulating shell 12 is made of an inorganic non-metallic material. Thus, when plasma impacts the inorganic non-metallic material, it hardly etches the material, and produces very few or no impurities. In contrast, using an organic material for the insulating shell 12 avoids contamination of the plasma cleaning equipment's cavity.

[0034] In some embodiments, the insulating housing 12 is made of glass. This arrangement results in lower material costs for the insulating housing 12, helping to reduce the cost of the pressure frame structure 10, and the material of the insulating housing 12 is readily available. In other embodiments, the insulating housing 12 may also be made of other inorganic non-metallic materials.

[0035] In one embodiment, the insulating shell 12 is assembled from multiple insulating plates. When the insulating shell 12 is made of inorganic non-metallic material, it is difficult to manufacture the insulating shell 12 as a single-piece structure or as two half-shells assembled together. The manufacturing difficulty of the insulating plates is lower. By setting the insulating shell 12 to be assembled from multiple insulating plates, the difficulty of the manufacturing process can be reduced.

[0036] Figure 2 and Figure 3 In the illustrated embodiment, the insulating shell 12 is assembled from six insulating plate portions, namely, a first insulating plate portion 121, a second insulating plate portion 122, a third insulating plate portion 123, a fourth insulating plate portion 124, a fifth insulating plate portion 125, and a sixth insulating plate portion 126. The first insulating plate portion 121 is located on the top wall of the metal plate portion 11; the second insulating plate portion 122 is located on the inner side wall of the metal plate portion 11, and one end is adjacent to the first insulating plate portion 121; the third insulating plate portion 123 is located on the top wall of the notch portion 15, and one end is adjacent to the second insulating plate portion 122; the fourth insulating plate portion 124 is located on the side wall of the notch portion 15, and one end is adjacent to the third insulating plate portion 123; the fifth insulating plate portion 125 is located on the bottom wall of the metal plate portion 11, and one end is adjacent to the fourth insulating plate portion 124; the sixth insulating plate portion 126 is located on the outer side wall of the metal plate portion 11, and both ends are adjacent to the fifth insulating plate portion 125 and the first insulating plate portion 121, respectively. All six insulating plates are annular plates; when the opening 14 is rectangular, the six insulating plates are square annular plates. In other embodiments, the number of insulating plates included in the insulating housing 12 may be different from six, for example, it may be more than six.

[0037] In one embodiment, an adhesive layer 13 is provided between the metal plate portion 11 and the insulating shell 12. By providing the adhesive layer 13, the bond between the metal plate portion 11 and the insulating shell 12 is strengthened, preventing the insulating plate portion of the insulating shell 12 from detaching from the metal plate portion 11, thus avoiding the problem of the insulating shell 12 failing to provide effective heat insulation. Furthermore, even if the insulating plate portion cracks and breaks into multiple fragments, these fragments are bonded together by the adhesive layer 13, preventing large gaps between adjacent fragments and ensuring the metal plate portion 11 is not exposed. This guarantees the heat insulation and insulation effects of the insulating shell 12, helping to extend the service life of the pressure frame structure 10.

[0038] In one embodiment, the insulating plate portion of the insulating housing 12 includes two opposing ends. When the insulating plate portion extends horizontally, one end is located on the inner side and the other end is located on the outer side; when the insulating plate portion extends longitudinally, one end is located on the upper side and the other end is located on the lower side. At least one end of the insulating plate portion is provided with a splicing structure, which includes a matching protrusion or recess. The end of the insulating plate portion with the splicing structure is spliced ​​to the adjacent end of the insulating plate portion with the splicing structure through the splicing structure, and the end of the insulating plate portion without the splicing structure abuts against the adjacent end of the insulating plate portion without the splicing structure. Both the protrusion and the recess are annular structures surrounding the opening. When an end of an insulating plate with a splicing structure is joined to an adjacent end of an insulating plate with a splicing structure, the two ends are joined together. This means that one end of an insulating plate has a protrusion, and the other end has a recess. The protrusion fits into the recess, thus joining the two insulating plates together. When an end of an insulating plate without a splicing structure abuts against an adjacent end of an insulating plate without a splicing structure, the two adjacent ends of these two insulating plates abut each other directly without any splicing structure.

[0039] Since at least one end of the insulating plate is provided with a splicing structure, the ends of two adjacent insulating plates with splicing structures are spliced ​​together through the splicing structure, which makes the two insulating plates more firmly assembled. The splicing structure includes matching protrusions and recesses. After two adjacent insulating plates are spliced ​​together through the protrusions and recesses, if the plasma enters the adhesive layer 13 through the gap between the protrusions and recesses, the path is longer and the energy loss is greater. When the plasma comes into contact with the surface of the adhesive layer 13, the energy becomes very small, and there are very few impurities generated by etching the adhesive layer 13, resulting in very little contamination of the plasma cleaning equipment.

[0040] In one embodiment, among the plurality of insulating plates of the insulating housing 12, two insulating plates have a splicing structure at one end and no splicing structure at the other end, and the ends of the two insulating plates without the splicing structure abut against each other. That is, among the plurality of insulating plates of the insulating housing 12, only two insulating plates have a splicing structure at one end and no splicing structure at the other end. With this arrangement, when assembling multiple insulating plates, the insulating plates with splicing structures at both ends are first spliced ​​together, and finally the two insulating plates with splicing structures at only one end are spliced ​​together with the other insulating plates. This arrangement is more convenient for assembling the insulating housing than a scheme where each insulating plate of the insulating housing 12 has splicing structures at both ends.

[0041] In the illustrated embodiment, the first insulating plate portion 121 has a recessed portion 1211 at one end and a recessed portion 1212 at the other end; the second insulating plate portion 122 has a protruding portion 1221 at one end adjacent to the first insulating plate portion 121 and a recessed portion 1222 at the other end; the third insulating plate portion 123 has a protruding portion 1231 at one end adjacent to the second insulating plate portion 122 and a recessed portion 1232 at the other end; the fourth insulating plate portion 124 has a protruding portion 1241 at one end adjacent to the third insulating plate portion 123 and a recessed portion 1242 at the other end; the fifth insulating plate portion 125 has a protruding portion 1251 at one end and no splicing structure at the other end; the sixth insulating plate portion 126 has no splicing structure at the end adjacent to the fifth insulating plate portion 125, and its other end is adjacent to the first insulating plate portion 121 and has a protruding portion 1261. The recessed portion 1211 of the first insulating plate portion 121 is joined to the protruding portion 1221 of the second insulating plate portion 122. The recessed portion 1222 of the second insulating plate portion 122 is joined to the protruding portion 1231 of the third insulating plate portion 123. The recessed portion 1232 of the third insulating plate portion 123 is joined to the protruding portion 1241 of the fourth insulating plate portion 124. The recessed portion 1242 of the fourth insulating plate portion 124 is joined to the protruding portion 1251 of the fifth insulating plate portion 125. The end of the fifth insulating plate portion 125 without a joining structure abuts against the end of the sixth insulating plate portion 126 without a joining structure. The protruding portion 1261 of the sixth insulating plate portion 126 is joined to the recessed portion 1212 of the first insulating plate portion 121. In this way, the six insulating plate portions are assembled to form an insulating shell 12, which covers the metal plate portion 11.

[0042] When assembling the six insulating plates of the insulating housing 12, the assembly can be performed in the following order: First, the second insulating plate 122 is joined together with the first insulating plate 121; then, the first insulating plate 121 is bonded to the metal plate 11 using the adhesive layer 13; then, the joined second insulating plate 122 and the third insulating plate 123 are bonded to the metal plate 11 using the adhesive layer 13, while simultaneously joining the second insulating plate 122 with the first insulating plate 121; finally, the fourth insulating plate 124 is bonded to the metal plate 11 using the adhesive layer 13. 3. The fourth insulating plate 124 is bonded to the metal plate 11, and the third insulating plate 123 is joined together with the fourth insulating plate 124. Then, the fifth insulating plate 125 is bonded to the metal plate 11 via the adhesive layer 13, and the fifth insulating plate 125 is joined together with the fourth insulating plate 124. Next, the sixth insulating plate 126 is bonded to the metal plate 11 via the adhesive layer 13, and the sixth insulating plate 126 is joined together with the first insulating plate 121, with the adjacent ends of the sixth insulating plate 126 and the fifth insulating plate 125 abutting against each other. Alternatively, the six insulating plates of the insulating housing 12 can be assembled in other assembly sequences.

[0043] In one embodiment, among the plurality of insulating plate portions of the insulating housing 12, two insulating plate portions have a splicing structure at one end, and the end of the insulating plate portion without the splicing structure forms an abutment surface. The abutment surface of the insulating plate portion abuts against the abutment surface of the adjacent insulating plate portion. The abutment surface is located at the bottom of the metal plate portion and extends longitudinally. See again. Figure 3 and Figure 4 The fifth insulating plate portion 125 has an abutment surface 1252 on the side facing the sixth insulating plate portion 126, and the sixth insulating plate portion 126 has an abutment surface 1262 on the side facing the fifth insulating plate portion 125. The abutment surface 1252 of the fifth insulating plate portion 125 abuts against the abutment surface 1262 of the sixth insulating plate portion 126.

[0044] After the two contact surfaces come into contact, a gap will exist. When plasma passes through this gap to enter the surface of the adhesive layer 13, the path is shorter and the energy loss is smaller. When the plasma comes into contact with the surface of the adhesive layer 13, the energy is larger, which will etch the surface of the adhesive layer 13 and generate impurities. By setting the contact surface at the bottom of the metal plate portion 11 and extending longitudinally, when the pressure frame structure 10 presses on the semiconductor package structure, the contact surface is located between the metal plate portion 11 and the semiconductor package structure, and the contact surface is not exposed. The plasma must first pass through the gap between the pressure frame structure 10 and the semiconductor package structure to enter the gap between the two contact surfaces. When the plasma enters the surface of the adhesive layer 13, the energy of the plasma becomes very weak, and there is almost no etching of the adhesive layer or very few impurities generated when etching the adhesive layer 13, which helps to avoid contaminating the chamber of the plasma cleaning equipment.

[0045] In one embodiment, the thickness of the insulating shell 12 ranges from 1 mm to 2 mm. This design avoids both situations where the insulating shell 12 is too thin, resulting in poor thermal insulation performance and high processing difficulty, and where the insulating shell 12 is too thick, resulting in an excessively large size of the pressure frame structure 10. In some embodiments, the thickness of the insulating shell 12 can be, for example, 1 mm, 1.2 mm, 1.4 mm, 1.6 mm, 1.7 mm, 2.0 mm, etc.

[0046] In this embodiment, the metal plate portion 11 is made of metal. The metal plate portion 11 is relatively heavy; increasing its thickness significantly increases the weight of the pressure frame structure 10. The thickness of the metal plate portion 11 can be determined based on the required weight of the pressure frame structure 10. For example, the thickness of the metal plate portion 11 can be 5mm, 6mm, 7mm, 8mm, 9mm, 10mm, etc. The material of the metal plate portion 11 can be iron, lead, molybdenum, etc., thus resulting in a higher density, lower cost, and readily available material.

[0047] It should be noted that the dimensions of layers and regions may be exaggerated in the accompanying drawings for clarity. Furthermore, it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be intermediate layers. Additionally, it is understood that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may be more than one intermediate layer or element. Furthermore, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Similar reference numerals throughout indicate similar elements.

[0048] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the claims.

[0049] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A press frame structure for a plasma cleaning apparatus, characterized by, The plasma cleaning device comprises upper and lower electrodes arranged oppositely, and can clean a semiconductor package structure; the pressing frame structure is used for pressing on the edge of the semiconductor package structure on the lower electrode; The pressing frame structure is provided with an opening for exposing the central region of the semiconductor package structure; the pressing frame structure comprises a metal plate part and an insulating shell, and the insulating shell covers the metal plate part; A bonding layer is arranged between the metal plate part and the insulating shell; the insulating shell is assembled by a plurality of insulating plate parts; at least one end of each insulating plate part is provided with a splicing structure comprising a matching protruding part or recessed part; the end of the insulating plate part provided with the protruding part is spliced with the end of the adjacent insulating plate part provided with the recessed part through the cooperation of the protruding part and the recessed part.

2. The press frame structure for a plasma cleaning apparatus according to claim 1, wherein The material of the insulating shell is inorganic non-metallic material.

3. The press frame structure for a plasma cleaning apparatus according to claim 2, wherein The material of the insulating shell is glass.

4. The press frame structure for a plasma cleaning apparatus according to claim 1, wherein The end of the insulating plate part without the splicing structure is abutted with the end of the adjacent insulating plate part without the splicing structure.

5. The press frame structure for a plasma cleaning apparatus according to claim 4, wherein Among the plurality of insulating plate parts, one end of two insulating plate parts is provided with a splicing structure, and the other end is not provided with the splicing structure.

6. The press frame structure for a plasma cleaning apparatus according to claim 5, wherein The end of the insulating plate part without the splicing structure is formed with an abutting surface, the abutting surface of the insulating plate part is abutted with the abutting surface of the adjacent insulating plate part, the abutting surface is located at the bottom of the metal plate part, and the abutting surface extends longitudinally.

7. The clamping frame structure for a plasma cleaning apparatus according to claim 1, wherein The thickness of the insulating shell ranges from 1mm to 2mm.

8. The clamping frame structure for a plasma cleaning apparatus according to claim 1, wherein The lower electrode is provided with an annular fixing part for clamping the semiconductor package structure; the inner side of the pressing frame structure is provided with a notch part, the notch part surrounds the opening, and the notch part is located at the bottom of the pressing frame structure; the notch part is used for abutting with the annular fixing part.

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