Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device

Abstract

This application relates to a substrate processing apparatus and a method of manufacturing a semiconductor device. An embodiment provides a substrate processing apparatus that can easily improve the uniformity of chemical liquid processing within a substrate surface. A substrate processing apparatus according to an embodiment includes: a processing tank that stores a chemical liquid for processing a plurality of substrates; a pipe that has an ejection port for ejecting the chemical liquid or gas bubbles into the processing tank; a plurality of rod-shaped bodies that support the plurality of substrates within the processing tank; and a conversion mechanism that is provided on the plurality of rod-shaped bodies or the processing tank and converts the vibration applied to each substrate by the chemical liquid or gas bubbles ejected from the pipe into rotation in one direction about the center of the substrate as a rotation axis.

Description

[0001] [Related Application(s)]

[0002] This application claims priority to Japanese Patent Application No. 2020-142920, filed on Aug. 26, 2020. This application incorporates by reference all of the content of the base application by reference thereto. Technical Field

[0003] Embodiments of the present invention relate to a substrate processing apparatus and a method for manufacturing a semiconductor device. Background Art

[0004] In one step of processing a substrate with a chemical solution, there is an etching step of immersing the substrate in a high-temperature chemical solution stored in a processing tank. In this etching step, there is a case where the chemical solution is stirred in the processing tank by ejecting the chemical solution or bubbles from the bottom of the processing tank. In such a case, since the flow rate of the chemical solution is relatively fast near the ejection port, there may be a difference in the etching amount within the substrate surface. Summary of the Invention

[0005] The problem to be solved by the invention is to provide a substrate processing apparatus and a method for manufacturing a semiconductor device that can easily improve the uniformity of chemical solution processing within the substrate surface.

[0006] A substrate processing apparatus according to an embodiment includes: a processing tank that stores a chemical solution for processing a plurality of substrates; a pipe that has an ejection port for ejecting the chemical solution or bubbles into the processing tank; a plurality of rod-shaped bodies that support a plurality of substrates in the processing tank; and a conversion mechanism that is provided on the plurality of rod-shaped bodies or the processing tank and converts the vibration applied to each substrate by the chemical solution or bubbles ejected from the pipe into rotation in one direction about the center of the substrate as a rotation axis. Brief Description of the Drawings

[0007] Figure 1 is a schematic diagram showing a substrate processing apparatus according to the first embodiment.

[0008] Figure 2 is a perspective view schematically showing the support form of a semiconductor substrate.

[0009] Figure 3 is to Figure 2 the enlarged side view of the area A shown.

[0010] Figure 4 is an enlarged perspective view of the elastomer.

[0011] Figure 5A is a top view of the semiconductor device before etching.

[0012] Figure 5B is along Figure 5A the sectional view of the cut line B-B shown.

[0013] Figure 6 It is a cross-sectional view of a semiconductor device after etching.

[0014] Figure 7A It is a front view showing the state of the semiconductor substrate descending.

[0015] Figure 7B It is a front view showing the state of the semiconductor substrate rotating.

[0016] Figure 7C It is a front view showing the state of the semiconductor substrate ascending.

[0017] Figure 8 It is a side view magnifying the main part of the substrate processing apparatus of the second embodiment.

[0018] Figure 9 It is a perspective view magnifying the protrusion.

[0019] Figure 10A It is a front view of the state of applying vibration to the semiconductor substrate.

[0020] Figure 10B It is a front view showing the state of preventing the clockwise rotation of the semiconductor substrate.

[0021] Figure 10C It is a front view showing the state of the counterclockwise rotation of the semiconductor substrate.

[0022] Figure 11 It is a front view showing the main part of the substrate processing apparatus of the third embodiment.

[0023] Figure 12 It is a side view of the rod-shaped body.

[0024] Figure 13A It is a front view showing the state of the semiconductor substrate floating.

[0025] Figure 13B It is a front view showing the state of the horizontal movement of the semiconductor substrate.

[0026] Figure 13C It is a front view showing the state of the semiconductor substrate rotating.

[0027] Figure 14 It is a schematic diagram schematically showing the configuration of the substrate processing apparatus of the first modification example.

[0028] Figure 15 It is a front view showing the main part of the substrate processing apparatus of the second modification example.

[0029] Figure 16 It is a front view showing the main part of the substrate processing apparatus of the third modification example.

[0030] Figure 17 It is a perspective view showing the main part of a substrate processing apparatus according to a fourth modification example. Detailed implementation manners

[0031] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. The present embodiments do not limit the present invention.

[0032] (First Embodiment)

[0033] Figure 1 It is a schematic diagram schematically showing the configuration of a substrate processing apparatus according to the first embodiment. Figure 1 The illustrated substrate processing apparatus 1 is a batch-type wet etching processing apparatus, which selectively etches a silicon nitride film (not shown) formed on each of a plurality of semiconductor substrates 100 at one time with a chemical solution 200. The substrate processing apparatus 1 of the present embodiment includes a processing tank 11, a pipe 12, a pump 13, and a plurality of rod-shaped bodies 14a to 14c.

[0034] The processing tank 11 has an inner tank 111 and an outer tank 112. The chemical solution 200 is stored in the inner tank 111. In the present embodiment, a high-temperature phosphoric acid solution heated to 150°C to 170°C is stored in the inner tank 111. The outer tank 112 recovers the chemical solution 200 that overflows from the inner tank 111.

[0035] The pipe 12 is connected to the bottom of the outer tank 112 and the bottom of the inner tank 111, and circulates the chemical solution 200 between the inner tank 111 and the outer tank 112. The chemical solution 200 flowing out to the outer tank 112 flows back to the inner tank 111 through the spray outlet 12a of the pipe 12.

[0036] The pump 13 is provided on the pipe 12. The pump 13 sucks the chemical solution 200 from the outer tank 112 and pressurizes the sucked chemical solution 200. Thus, the chemical solution 200 recovered into the outer tank 112 is sprayed into the inner tank 111 through the spray outlet 12a of the pipe 12.

[0037] Figure 2 It is a perspective view schematically showing the supporting form of the semiconductor substrate 100. In the inner tank 111, three rod-shaped bodies 14a to 14c support a plurality of semiconductor substrates 100 arranged in a column along the Y direction. Each rod-shaped body extends along the Y direction from the lifter 15 and can be formed of quartz, for example. The rod-shaped body 14a and the rod-shaped body 14b are symmetrically arranged with respect to a central axis passing through the center C of the semiconductor substrate 100 and extending along the Z direction. In addition, the rod-shaped body 14c is arranged on the central axis between the rod-shaped body 14a and the rod-shaped body 14b.

[0038] The lifter 15 is driven by a drive mechanism 16. The drive mechanism 16 is constituted by, for example, an electric motor and a drive circuit of the electric motor. When the drive mechanism 16 raises and lowers the lifter 15 along the Z direction, the semiconductor substrate 100 supported by the rod-shaped bodies 14a to 14c can be automatically loaded into and unloaded from the inner groove 111.

[0039] Figure 3 is a side view in which the region A shown Figure 2 is enlarged. As Figure 3 shown, a plurality of recesses 141 are provided in the rod-shaped body 14b along the Y direction. The semiconductor substrates 100 are inserted into the respective recesses 141 one by one. At the bottom of each recess 141, a plurality of elastic bodies 142 are provided.

[0040] Figure 4 is a perspective view in which the elastic body 142 is enlarged. At the bottom of each recess 141, the plurality of elastic bodies 142 are arranged along the X direction orthogonal to the Y direction and the Z direction. Each elastic body 142 is formed in a fin shape using an elastic material such as fluororesin or rubber.

[0041] In addition, in order to rotate the semiconductor substrate 100 in one direction about a rotation axis passing through its center C and extending along the Y direction, the elastic body 142 is inclined from its lower end portion toward its upper end portion in the rotation direction. The recesses 141 and the elastic bodies 142 are provided not only in the rod-shaped body 14b but also in the rod-shaped bodies 14a and 14c.

[0042] Hereinafter, the manufacturing steps of a semiconductor device using the substrate processing apparatus 1 of the present embodiment will be described. Specifically, a part of the manufacturing steps of a three-dimensional stacked semiconductor memory device in which electrode layers are stacked will be described.

[0043] Figure 5A is a top view of the semiconductor device before etching. Figure 5B is along Figure 5A a cross-sectional view taken along the cutting line B-B shown. In addition, Figure 6 is a cross-sectional view of the semiconductor device after etching.

[0044] As Figure 5B shown, on the semiconductor substrate 100, a silicon nitride film 101 and a silicon oxide film 102 are alternately stacked. The stacked body including the silicon nitride film 101 and the silicon oxide film 102 is separated by a slit 103. In addition, a plurality of columnar storage films 104 are formed in the stacked body.

[0045] When the drive mechanism 16 drives the lifter 15 and immerses the semiconductor substrate 100 in the chemical solution 200 stored in the inner groove 111, the chemical solution 200 enters the stacked body from the slit 103. As a result, as Figure 6In the cross-sectional view shown, the silicon nitride film 101 is selectively etched with respect to the silicon oxide film 102. When the etching of the silicon nitride film 101 is completed, the semiconductor substrate 100 is taken out of the inner tank 111 by the lifter 15. Thereafter, a conductive film containing tungsten (W) is formed, for example, at the etched portion of the silicon nitride film 101. A part of the conductive film functions as a word line.

[0046] Hereinafter, with reference to Figure 7A - Figure 7C , the movement of the semiconductor substrate 100 during the etching of the silicon nitride film 101 will be described.

[0047] In the inner tank 111, a flow of the chemical liquid 200 is generated between the bottom and the upper part of the inner tank 111 by the chemical liquid 200 ejected from the ejection port 12a of the pipe 12 (see Figure 1 ). Due to the flow of the chemical liquid 200, first, as shown in Figure 7A , a downward force in the vertical direction is applied to the semiconductor substrate 100.

[0048] When the outer peripheral portion of the semiconductor substrate 100 descends to a position in contact with the elastomer 142 due to the force, the elastomer 142 is inclined, so as shown in Figure 7B , the semiconductor substrate 100 rotates in the direction R along the inclination of the elastomer 142.

[0049] Next, as shown in Figure 7C , the semiconductor substrate 100 rises due to an upward force in the vertical direction generated by the flow of the chemical liquid 200. At this time, the elastomer 142 elastically deforms and returns to the shape shown in Figure 7A . Thereafter, the rotation of the semiconductor substrate 100 shown in Figure 7A - Figure 7C is repeated.

[0050] According to the present embodiment described above, the conversion mechanism including the concave portions 141 and the elastomer 142 provided on the rod-shaped bodies 14a to 14c converts the vertical vibration applied to the semiconductor substrate 100 due to the flow of the chemical liquid 200 into the rotation of the semiconductor substrate 100 about the rotation axis C. As a result, the entire surface of the semiconductor substrate 100 periodically passes near the ejection port 12a where the flow rate of the chemical liquid 200 is large, and thus the flow of the chemical liquid 200 is homogenized. Therefore, the silicon nitride film 101 is etched uniformly within the semiconductor substrate 100.

[0051] In addition, in the present embodiment, the semiconductor substrate 100 is rotated by using simple mechanisms such as the concave portions 141 and the elastomer 142 instead of a large-scale mechanism such as a motor. Therefore, it is possible to easily improve the uniformity of the chemical liquid treatment within the surface of the semiconductor substrate 100.

[0052] In addition, in the present embodiment, the lifter 15 may be vibrated in the vertical direction (Z direction) and the horizontal direction (X direction) by the drive mechanism 16 during the etching process. In such a case, since the amplitude and frequency of the vibration of the semiconductor substrate 100 can be adjusted by the drive mechanism 16, the controllability of the rotation operation of the semiconductor substrate 100 is improved.

[0053] (Second Embodiment)

[0054] Hereinafter, the second embodiment will be described. In the present embodiment, the structure of the rod-shaped bodies 14a to 14c is different from that of the first embodiment. Therefore, hereinafter, the description will focus on the differences from the first embodiment.

[0055] Figure 8 It is a side view showing an enlarged main part of the substrate processing apparatus of the second embodiment. Figure 8 And Figure 2 corresponds to an enlarged view of the area A shown. As Figure 8 shown, in the rod-shaped body 14b of the present embodiment, as in the first embodiment, a plurality of recesses 141 are provided along the Y direction. On the other hand, a plurality of protrusions 143 are provided at the bottom of each recess 141.

[0056] Figure 9 It is a perspective view showing an enlarged protrusion 143. At the bottom of each recess 141, a plurality of protrusions 143 are arranged along the X direction. Each protrusion 143 is formed, for example, in a mountain shape using quartz or the like having resistance to the chemical solution 200. In addition, the inclined surface (ridge line) of each protrusion 143 is inclined in the rotation direction in order to rotate the semiconductor substrate 100 in one direction. The protrusions 143 are provided not only on the rod-shaped body 14b but also on the rod-shaped body 14a and the rod-shaped body 14c.

[0057] In the substrate processing apparatus of the present embodiment, the silicon nitride film 101 described in the first embodiment may also be selectively etched. Hereinafter, with reference to Figure 10A - Figure 10C , the movement of the semiconductor substrate 100 during the etching of the silicon nitride film 101 will be described.

[0058] As Figure 10A shown, when the outer peripheral portion of the semiconductor substrate 100 comes into contact with the top (front end portion) of the protrusion 143, due to the flow of the chemical solution 200 generated between the bottom and the top of the inner groove 111, a horizontal or vertical vibration is applied to the semiconductor substrate 100.

[0059] When the above vibration is applied to the semiconductor substrate 100, as Figure 10B shown, since the inclined surface of the protrusion 143 is inclined in one direction, the rotation of the semiconductor substrate 100 in the clockwise direction R1 opposite to the one direction is prevented. On the other hand, the protrusion 143 is asFigure 10C As shown, the rotation of the semiconductor substrate 100 is promoted in the counterclockwise direction R2 that is the same as a direction. Thus, the semiconductor substrate 100 repeatedly rotates in the counterclockwise direction R2.

[0060] According to the present embodiment described above, the conversion mechanism including the concave portions 141 and the protruding portions 143 provided on the rod-shaped bodies 14a to 14c converts the vibration in the vertical direction or the horizontal direction applied to the semiconductor substrate 100 due to the flow of the liquid medicine 200 into the rotation of the semiconductor substrate 100 about the center C as the rotation axis. As a result, since the entire surface of the semiconductor substrate 100 periodically passes near the ejection port 12a where the flow rate of the liquid medicine 200 is large, the flow of the liquid medicine 200 is homogenized. Therefore, the silicon nitride film 101 is etched uniformly within the semiconductor substrate 100.

[0061] In addition, in the present embodiment, the conversion mechanism has a simple configuration such as the concave portions 141 and the protruding portions 143. Therefore, it is possible to easily improve the uniformity of the liquid medicine treatment within the surface of the semiconductor substrate 100.

[0062] (Third Embodiment)

[0063] Hereinafter, the third embodiment will be described. In the present embodiment, the arrangement of the rod-shaped bodies 14a to 14c is different from that of the first embodiment. Therefore, hereinafter, the description will focus on the differences from the first embodiment.

[0064] Figure 11 is a front view showing the main part of the substrate processing apparatus according to the third embodiment. Figure 11 In, the description of the constituent elements of the substrate processing apparatus other than the rod-shaped bodies 14a to 14c is omitted.

[0065] As Figure 11 shown, in the present embodiment, the rod-shaped body 14a and the rod-shaped body 14b are asymmetrically arranged with respect to the central axis extending along the Z direction through the center C of the semiconductor substrate 100. In addition, the rod-shaped body 14c is arranged at a position deviating from the central axis between the rod-shaped body 14a and the rod-shaped body 14b. That is, the linear distance from the rod-shaped body 14a to the rod-shaped body 14c is different from the linear distance from the rod-shaped body 14b to the rod-shaped body 14c.

[0066] According to the above-described configuration, the semiconductor substrate 100 is supported by two of the rod-shaped bodies 14a to 14c at the same time. Among them, the rod-shaped body 14a and the rod-shaped body 14b support the semiconductor substrate 100 at different times, and the rod-shaped body 14c supports the semiconductor substrate 100 at the same time as either the rod-shaped body 14a or the rod-shaped body 14b.

[0067] Figure 12 is a side view of the rod-shaped bodies 14a to 14c. InFigure 12 In the rod-shaped bodies 14a to 14c shown, the concave portions 141 described in the first embodiment are formed, while the elastic bodies 142 are not formed.

[0068] In the substrate processing apparatus of the present embodiment, the silicon nitride film 101 described in the first embodiment can also be selectively etched. Hereinafter, with reference to Figure 13A - Figure 13C , the movement of the semiconductor substrate 100 during the etching of the silicon nitride film 101 will be described.

[0069] When the rod-shaped bodies 14a and 14c come into contact with the outer peripheral portion of the semiconductor substrate 100 (refer to Figure 11 ), when an upward vertical flow of the chemical solution 200 is generated in the inner groove 111, as Figure 13A shown, the semiconductor substrate 100 floats (rises) within the range not exceeding the concave portion 141. At this time, the rod-shaped body 14a prevents the semiconductor substrate 100 from moving horizontally in the -X direction ( Figure 13A the left side in). Therefore, as Figure 13B shown, the semiconductor substrate 100 moves horizontally in the +X direction ( Figure 13A the right side in) and is supported by the rod-shaped bodies 14b and 14c.

[0070] Since the interval between the rod-shaped body 14b and the rod-shaped body 14c is narrower than the interval between the rod-shaped body 14a and the rod-shaped body 14c, the semiconductor substrate 100 is in an unstable state. Therefore, the semiconductor substrate 100 rotates in the direction R and is supported again by the rod-shaped bodies 14a and 14c. Thereafter, the rotation of the semiconductor substrate 100 shown in Figure 13A - Figure 13C is repeated.

[0071] According to the present embodiment described above, the conversion mechanism including the three rod-shaped bodies 14a to 14c converts the vertical vibration applied to the semiconductor substrate 100 due to the flow of the chemical solution 200 into the rotation of the semiconductor substrate 100, and at the same time, a horizontal movement is interposed between the vibration and the rotation. As a result, the entire surface of the semiconductor substrate 100 periodically passes near the ejection port 12a where the flow rate of the chemical solution 200 is large. As a result, the flow of the chemical solution 200 is uniformized. Therefore, the silicon nitride film 101 is etched uniformly within the semiconductor substrate 100.

[0072] In addition, in the present embodiment, it is not necessary to provide the elastic body 142 at the bottom of the concave portion 141 of each rod-shaped body. Therefore, the rotation mechanism that converts the vibration of the semiconductor substrate 100 into rotation can be made into a simpler configuration.

[0073] (First Variation Example)

[0074] Figure 14It is a schematic diagram showing the configuration of a substrate processing apparatus according to a first modification. The same reference numerals are given to the same components as those of the substrate processing apparatus 1 shown in Figure 1 and detailed description thereof is omitted.

[0075] In addition to the components of the substrate processing apparatus 1, the substrate processing apparatus 1a of this modification further includes a pipe 17 (second pipe) and a bubble generator 18. At one end of the pipe 17, a jet outlet 17a communicating with the inner tank 111 is provided. The jet outlet 17a is the same as the jet outlet 12a of the pipe 12 (first pipe) and is disposed at the bottom of the inner tank 111. In addition, Figure 14 although four jet outlets 17a are shown in, the number of jet outlets 17a is not particularly limited.

[0076] The bubble generator 18 causes nitrogen gas to flow in the pipe 17. When the nitrogen gas is ejected from the jet outlet 17a, bubbles 300 are generated in the chemical liquid 200. Since the bubbles 300 and the chemical liquid 200 ejected from the jet outlet 12a stir the chemical liquid 200 in the inner tank 111 together, the semiconductor substrate 100 is likely to vibrate. The vibration of the semiconductor substrate 100 is converted into the rotation of the semiconductor substrate 100 by the conversion mechanisms (recess 141, elastic body 142, protrusion 143) provided on the rod-like bodies 14a to 14c described in the first to third embodiments, respectively.

[0077] At this time, in this modification, the bubble generator 18 can adjust the gas flow rate. For example, when the gas flow rate is increased in the order from the jet outlet 17a disposed on the Figure 14 left side to the jet outlet 17a disposed on the Figure 14 right side, since more bubbles 300 are generated from the jet outlet 17a on the right side, the semiconductor substrate 100 is likely to rotate in the direction R.

[0078] According to the present embodiment described above, since the bubble generator 18 generates bubbles 300 in the chemical liquid 200, the vibration of the semiconductor substrate 100 can be assisted. In addition, by controlling the generation position of the bubbles 300 by the bubble generator 18, the rotation of the semiconductor substrate 100 can also be assisted.

[0079] (Second modification)

[0080] Figure 15 It is a front view showing the main part of the substrate processing apparatus according to the second modification. The substrate processing apparatus 1b of this modification further includes rod-like bodies 14c to 14e. In addition, the substrate processing apparatus 1b does not need to include all of the rod-like bodies 14c to 14e and may include at least one rod-like body. In addition, Figure 15 description of the components of the substrate processing apparatus 1b other than the rod-like bodies 14a to 14e is omitted.

[0081] The rod-shaped bodies 14c to 14e have the same structure as the rod-shaped bodies 14a to 14c described in the first or second embodiment. That is, a plurality of recesses 141 are formed in the rod-shaped bodies 14c to 14e, and a plurality of elastic bodies 142 or a plurality of protrusion portions 143 are provided at the bottoms of the respective recesses 141.

[0082] The rod-shaped body 14c and the rod-shaped body 14d are provided on the inner side surface 111a of the inner groove 111 and face each other in the X direction. On the other hand, the rod-shaped body 14e is provided on the lid portion 111b of the inner groove 111 and faces the rod-shaped body 14c in the Z direction. When the outer peripheral portion of the semiconductor substrate 100 comes into contact with the elastic body 142 or the protrusion portion 143 provided on the rod-shaped bodies 14c to 14e, the elastic body 142 or the protrusion portion 143 causes the semiconductor substrate 100 to rotate in the direction R.

[0083] Therefore, according to this modification example, the number of conversion mechanisms for converting the vibration of the semiconductor substrate 100 into rotation increases compared with the first and second embodiments. As a result, since the semiconductor substrate 100 rotates more smoothly, the uniformity of the liquid medicine treatment can be further improved.

[0084] (Third modification example)

[0085] Figure 16 It is a front view showing the main part of the substrate processing apparatus according to the third modification example. Figure 16 In the figure, the description of the components of the substrate processing apparatus other than the rod-shaped bodies 14a to 14c is omitted.

[0086] In this modification example, the rod-shaped bodies 14a and 14b are arranged asymmetrically with respect to the center C of the semiconductor substrate 100, similar to the third embodiment. In addition, the rod-shaped body 14c is arranged at a position deviating from the central axis between the rod-shaped bodies 14a and 14b. That is, the linear distance from the rod-shaped body 14a to the rod-shaped body 14c is different from the linear distance from the rod-shaped body 14b to the rod-shaped body 14c.

[0087] Among them, in this modification example, the height (distance in the Z direction) from the rod-shaped body 14c to the rod-shaped body 14a is different from the height from the rod-shaped body 14c to the rod-shaped body 14b. Even with such an arrangement, the rod-shaped bodies 14a and 14b among the rod-shaped bodies 14a to 14c can support the semiconductor substrate 100 at different times, and the rod-shaped body 14c can support the semiconductor substrate 100 simultaneously with either the rod-shaped body 14a or the rod-shaped body 14c.

[0088] Therefore, in this modification example, the rod-shaped bodies 14a to 14c may be the same as those in the third embodiment, converting the vibration in the vertical direction applied to the semiconductor substrate 100 into the rotation of the semiconductor substrate 100, and at the same time entraining a movement in the horizontal direction between the vibration and the rotation. Thereby, the chemical liquid treatment on the surface of the semiconductor substrate 100 can be made uniform.

[0089] (Fourth Modification Example)

[0090] Figure 17 FIG. is a front view showing the main part of the substrate processing apparatus according to the fourth modification example. In the third embodiment, the semiconductor substrate 100 is supported by two rod-shaped bodies. Therefore, the support of the semiconductor substrate 100 is likely to become unstable.

[0091] Therefore, in this modification example, as Figure 17 shown, an anti-slip sheet 19 is attached to a part of the outer peripheral surface of the cylindrical rod-shaped bodies 14a to 14c. The anti-slip sheet 19 is formed of a material having a friction coefficient greater than that of the rod-shaped bodies 14a to 14c. Thereby, the contact portion between the semiconductor substrate 100 and the rod-shaped bodies 14a to 14c is not likely to slip.

[0092] Therefore, according to this modification example, since the support stability of the semiconductor substrate 100 is improved, the semiconductor substrate 100 can be smoothly moved horizontally and rotated.

[0093] Although several embodiments of the present invention have been described, the embodiments are presented as examples and are not intended to limit the scope of the invention. The embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. The embodiments and their variations are included in the scope and gist of the invention, and are also included in the invention described in the claims and its equivalents.

[0094] [Description of Reference Numerals]

[0095] 1, 1a, 1b Substrate processing apparatus

[0096] 11 Processing tank

[0097] 12, 17 Pipes

[0098] 12a, 17a Spray outlets

[0099] 14a to 14c Rod-shaped bodies

[0100] 100 Semiconductor substrate

[0101] 141 Recess

[0102] 142 Elastomer

[0103] 143 Protrusion

[0104] 200 liquid medicine.

Claims

1. A substrate processing apparatus, comprising: A processing tank for storing a chemical solution for processing multiple substrates; A pipe having a spout for ejecting the chemical solution or bubbles into the processing tank; Multiple rod-shaped bodies for supporting the multiple substrates in the processing tank; and A conversion mechanism provided on the multiple rod-shaped bodies or the processing tank for converting the vibration applied to each substrate by the chemical solution or the bubbles ejected from the pipe into rotation in one direction about the center of the substrate as the rotation axis; The conversion mechanism includes: Multiple concave portions provided on each rod-shaped body along the arrangement direction of the multiple substrates; and Multiple mountain-shaped protrusions provided at the bottom of each concave portion and inclined in the one direction.

2. The substrate processing apparatus according to claim 1, wherein The pipe has a first pipe for ejecting the chemical solution and a second pipe for ejecting the bubbles, A bubble generator for generating the bubbles is connected to the second pipe.

3. The substrate processing apparatus according to claim 1, wherein a part of the multiple rod-shaped bodies is provided on the inner side surface or the cover portion of the processing tank.

4. A substrate processing apparatus, comprising: A processing tank for storing a chemical solution for processing multiple substrates; A pipe having a spout for ejecting the chemical solution or bubbles into the processing tank; Multiple rod-shaped bodies that support the multiple substrates within the processing tank; And A conversion mechanism provided on the multiple rod-shaped bodies or the processing tank for converting the vibration applied to each substrate by the chemical solution or the bubbles ejected from the pipe into rotation in one direction about the center of the substrate as the rotation axis; The conversion mechanism includes: A first rod-shaped body, which is one of the multiple rod-shaped bodies; A second rod-shaped body, which is asymmetrically arranged with respect to the center of the substrate relative to the first rod-shaped body and supports the multiple substrates at different times from the first rod-shaped body; And A third rod-shaped body arranged between the first rod-shaped body and the second rod-shaped body and supporting the multiple substrates simultaneously with either the first rod-shaped body or the second rod-shaped body.

5. The substrate processing apparatus according to claim 4, wherein The pipe has a first pipe for ejecting the chemical solution and a second pipe for ejecting the bubbles, A bubble generator for generating the bubbles is connected to the second pipe.

6. The substrate processing apparatus according to claim 4, wherein a part of the multiple rod-shaped bodies is provided on the inner side surface or the cover portion of the processing tank.

7. The substrate processing apparatus according to claim 4, wherein the linear distance from the first rod-shaped body to the third rod-shaped body is different from the linear distance from the second rod-shaped body to the third rod-shaped body.

8. The substrate processing apparatus according to claim 4, wherein anti-slip sheets are attached to a part of the outer peripheral surfaces of the first rod-shaped body, the second rod-shaped body, and the third rod-shaped body respectively.

9. A method for manufacturing a semiconductor device, wherein Multiple substrates are immersed in a chemical solution stored in a processing tank, The chemical solution or bubbles are ejected into the processing tank, While converting the vibration applied to each substrate by the ejected chemical solution or bubbles into rotation in one direction about the center of the substrate as the rotation axis, a film formed on the substrate is etched; The multiple substrates are supported by multiple rod-shaped bodies, The vibration is converted into rotation in one direction by using a plurality of concave portions provided in each rod-shaped body along the arrangement direction of the plurality of substrates, and a plurality of mountain-shaped protrusions provided at the bottom of each concave portion and inclined in the one direction.

10. The method of manufacturing a semiconductor device according to claim 9, wherein the liquid medicine is ejected from the first pipe, the bubbles are ejected from a second pipe different from the first pipe.

11. The method of manufacturing a semiconductor device according to claim 9, wherein the plurality of substrates are supported by rod-shaped bodies provided on the inner side surface or the lid portion of the processing tank.

12. A method of manufacturing a semiconductor device, wherein a plurality of substrates are immersed in a liquid medicine stored in a processing tank, the liquid medicine or bubbles are ejected into the processing tank, while converting the vibration applied to each substrate by the ejected liquid medicine or the bubbles into rotation in one direction about the center of the substrate as a rotation axis, the film formed on the substrate is etched; the plurality of substrates are supported by a first rod-shaped body, a second rod-shaped body, and a third rod-shaped body, the second rod-shaped body is asymmetrically arranged with respect to the center of the substrate relative to the first rod-shaped body, and supports the plurality of substrates at a different time from the first rod-shaped body, the third rod-shaped body is arranged between the first rod-shaped body and the second rod-shaped body, and supports the plurality of substrates simultaneously with either the first rod-shaped body or the second rod-shaped body.

13. The method of manufacturing a semiconductor device according to claim 12, wherein the liquid medicine is ejected from the first pipe, the bubbles are ejected from a second pipe different from the first pipe.

14. The method of manufacturing a semiconductor device according to claim 12, wherein the plurality of substrates are supported by rod-shaped bodies provided on the inner side surface or the lid portion of the processing tank.

15. The method of manufacturing a semiconductor device according to claim 12, wherein the rod-shaped bodies are arranged such that the linear distance from the first rod-shaped body to the third rod-shaped body is different from the linear distance from the second rod-shaped body to the third rod-shaped body.

16. The method of manufacturing a semiconductor device according to claim 12, wherein anti-slip sheets are attached to a part of the outer peripheral surfaces of the first rod-shaped body, the second rod-shaped body, and the third rod-shaped body respectively.

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