Substrate Processing Apparatus and Substrate Processing Method

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a rotating chuck unit rotatably provided on a driving unit; a vacuum chuck unit disposed on the rotating chuck unit and for placing a wafer; a ring cover unit disposed along the outer periphery of the vacuum chuck unit to press the wafer so as to seal the outer periphery side of the vacuum chuck unit; and a clamping module provided on the rotating chuck unit to fix the ring cover unit to the rotating chuck unit. According to the present invention, as the clamping base rotates, a plurality of first clamping link portions and a plurality of wafer restricting portions move simultaneously, so that a wafer can be restricted on the vacuum chuck unit by using one clamping rotating portion. Therefore, the number of clamping rotating portions provided in the clamping module can be reduced.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method capable of improving the processing performance of a substrate and shortening the processing time of the substrate. Background Art

[0002] Generally, in semiconductor processes, an etching process for etching a wafer, a separation process for cutting the wafer into a plurality of dies, a cleaning process for cleaning the wafer, etc. are performed. In the wafer etching process or the cleaning process, a substrate processing apparatus is used.

[0003] The substrate processing apparatus is provided in a rotatable manner, and includes a rotating table on which a wafer is placed on the upper part and a sealing ring annularly coupled to an edge region of the rotating table. While the rotating table is rotating, a processing liquid is supplied to the wafer placed on the rotating table.

[0004] However, when the existing substrate processing apparatus cleans a wafer cut into a plurality of dies, it is difficult to remove foreign substances remaining in the gaps between the plurality of dies. In addition, in order to remove foreign substances in the gaps between the plurality of dies, it is necessary to sufficiently extend the cleaning time, so the cleaning time is increased.

[0005] In addition, the process of coupling the sealing ring to the upper part of the rotating table is complicated, and the completion state of the coupling of the sealing ring during coupling is uncertain, and coupling errors (such as distortion) may occur. Further, in the case of generating a coupling error of the sealing ring, as the processing liquid infiltrates outside the sealing ring, the structural members around the table may be damaged.

[0006] In addition, a wafer fixing module is provided to prevent the wafer position from changing, and a sealing ring fixing module for fixing the sealing ring is provided. Therefore, the structure of the substrate processing apparatus becomes complicated, and the manufacturing cost may increase.

[0007] The background art of the present invention is described in Korean Patent Publication No. 10-2016-0122067 (published on October 21, 2016, invention title: wafer processing equipment and sealing ring for wafer processing equipment). Summary of the Invention

[0008] Technical Problem to be Solved

[0009] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of improving the processing performance of a substrate and shortening the processing time of the substrate.

[0010] Means for Solving the Technical Problem

[0011] The substrate processing apparatus according to the present invention is characterized in that it includes: a rotating chuck part, which is rotatably arranged on a driving part; a vacuum chuck part, which is arranged on the rotating chuck part and for placing a wafer; a ring cover part, which is arranged along the outer periphery of the vacuum chuck part to press the wafer so as to seal the outer periphery side of the vacuum chuck part; and a clamping module, which is arranged on the rotating chuck part to fix the ring cover part to the rotating chuck part.

[0012] The clamping module may include: a clamping base, which is arranged on the rotating chuck part; a clamping rotating part, which is connected to the clamping base to rotate the clamping base; a plurality of second clamping link parts, which are radially connected to the clamping base and move when the clamping base rotates; and a plurality of cover limiting parts, which are connected to the second clamping link parts to fix the ring cover part to the rotating chuck part when the second clamping link parts move.

[0013] The cover limiting part may include: a cover limiting shaft part, which is rotatably arranged on the rotating chuck part; a limiting gear part, which is connected to the second link gear part; a cover limiting strip, which is connected to the cover limiting shaft part to press and release the ring cover part; and a limiting roller part, which is rotatably arranged on the cover limiting strip to rollingly contact the ring cover part.

[0014] The cover limiting shaft part may include: a shaft coupling part, which is shaft-coupled to the limiting gear part; an elastic member, which is sandwiched between the shaft coupling part and the limiting gear part; and a height adjusting part, which is arranged on the shaft coupling part and the limiting gear part to adjust the height of the shaft coupling part.

[0015] A polygonal rotation prevention part may be formed on the limiting gear part, and a polygonal rotation prevention groove part is formed inside the shaft coupling part for inserting the rotation prevention part.

[0016] The cover limiting shaft part may further include: a position fixing part, which is threadedly coupled to the outside of the shaft coupling part to limit the height adjusting part to the shaft coupling part.

[0017] The clamping module may further include: a plurality of first clamping link parts, which are respectively radially connected to the clamping base and move when the clamping base rotates; and a plurality of wafer limiting parts, which are respectively connected to the first clamping link parts to fix the retaining ring part of the wafer to the vacuum chuck part when the first clamping link parts move.

[0018] The clamping base may include: a base body portion formed in an annular shape concentric with the rotation axis of the rotary chuck portion; a plurality of guide portions formed on the base body portion to movably couple the first clamping link portion to the plurality of guide portions; and a base gear portion formed on the base body portion and connected to the clamping rotation portion.

[0019] The guide portions can be formed to be inclined with respect to the radius of the base body portion.

[0020] The first clamping link portion may include: a first guide slider movably coupled to the guide portions; a first link member connected to the first guide slider and linearly moving along the radius direction of the base body portion when the first guide slider moves; and a first link gear portion formed on the first link member to mesh and move with the base gear portion.

[0021] The first clamping link portion may further include a first guide block, and the first link member is movably coupled to the first guide block in a linear movement manner.

[0022] The wafer restricting portion may include: a chuck shaft portion rotatably provided on the rotary chuck portion; a chuck gear portion formed on the chuck shaft portion to mesh with the first clamping link portion; a chuck link portion connected to the chuck shaft portion; a chuck support portion fixed to the rotary chuck portion; and a pressing chuck portion rotatably provided on the chuck support portion, and when the chuck link portion moves, the pressing chuck portion rotates to press and release the retaining ring portion of the wafer.

[0023] The pressing chuck portion may include: a chuck rotating portion hingedly coupled to the chuck support portion and connected to the chuck link portion; and a pressing finger portion formed on the chuck rotating portion to press and release the retaining ring portion of the wafer.

[0024] When the clamping base rotates, a plurality of first clamping link portions and a plurality of second clamping link portions can move simultaneously.

[0025] The height of the retaining ring portion of the wafer placed on the rotary chuck portion may be the same as the height of the upper surface of the mold of the wafer placed on the vacuum chuck portion, or may be lower than the height of the upper surface of the mold of the wafer placed on the vacuum chuck portion.

[0026] The substrate processing apparatus further includes: a plurality of adsorption pad portions provided on the vacuum chuck portion to adsorb the retaining ring portion of the wafer.

[0027] The adsorption pad portion may include: an adsorption main body portion disposed above the vacuum port portion to adsorb the wafer; a flatness management portion formed to be inclined from the outer peripheral portion of the lower side of the adsorption main body portion toward the central portion side for the insertion of the vacuum port portion; and a press-fitting fixing portion formed on the flatness management portion to be press-fitted into the fixing groove portion of the vacuum chuck portion.

[0028] The substrate processing method of the present invention includes: a step of mounting a wafer on a vacuum chuck portion; a step of disposing a ring cover portion on the outer peripheral portion of the vacuum chuck portion; a step of fixing the wafer to the vacuum chuck portion and fixing the ring cover portion to a rotating chuck portion as a clamping module moves; and a step of rotating the rotating chuck portion and the vacuum chuck portion and jetting a supply liquid onto the wafer to etch the wafer.

[0029] The step of fixing the wafer to the vacuum chuck portion and fixing the ring cover portion to the rotating chuck portion as the clamping module moves may include: a step of the clamping rotating portion rotating a clamping base; a step of multiple first clamping link portions and multiple second clamping link portions moving as the clamping base rotates; and a step of multiple wafer restricting portions fixing a retainer ring portion of the wafer to the vacuum chuck portion and multiple cover restricting portions fixing the ring cover portion to the rotating chuck portion.

[0030] The ring cover portion may prevent the supply liquid from entering the retainer ring portion side of the wafer by pressing the bonding sheet of the wafer.

[0031] In the step of multiple first clamping link portions and multiple second clamping link portions moving as the clamping base rotates, the multiple first clamping link portions and the multiple second clamping link portions may move simultaneously when the clamping base rotates.

[0032] The clamping module may include multiple cover restricting portions connected to the second clamping link portion to fix the ring cover portion to the rotating chuck portion when the second clamping link portion moves.

[0033] The cover restricting portion may include: a cover restricting shaft portion rotatably provided on the rotating chuck portion; a restricting gear portion connected to the second link gear portion; a cover restricting bar connected to the cover restricting shaft portion to press and release the ring cover portion; and a restricting roller portion rotatably provided on the cover restricting bar to make rolling contact with the ring cover portion.

[0034] Technical effects

[0035] According to the present invention, as the clamping base rotates, a plurality of first clamping link portions and a plurality of wafer restricting portions move simultaneously. Therefore, a wafer can be restricted to the vacuum chuck portion by one clamping rotating portion. Accordingly, the number of clamping rotating portions provided in the clamping module can be reduced.

[0036] In addition, according to the present invention, the ring cover portion presses the bonding sheet of the wafer, thereby sealing the outer peripheral portion of the vacuum chuck. Therefore, damage to the bonding sheet caused by the etching solution is reduced, and contamination or breakage of the rotating chuck portion and the vacuum chuck portion caused by the etching solution can be prevented.

[0037] In addition, according to the present invention, a wafer and a ring cover portion are simultaneously fixed to the vacuum chuck portion and the rotating chuck portion by one clamping base and one clamping rotating portion. Therefore, the structure of the substrate processing apparatus can be simplified.

[0038] In addition, according to the present invention, during the process in which the clamping module seals the ring cover portion, the bonding error of the ring cover portion can be easily set, and the bonding error of the ring cover portion can be reduced.

[0039] In addition, according to the present invention, the restricting roller portion is in rolling contact with the restricting rib portion of the ring cover portion, thereby preventing wear or scratches on the restricting rib portion of the ring cover portion and generating foreign matter. Therefore, the inflow of foreign matter into the wafer located inside the ring cover portion can be suppressed, and the defect rate of the wafer can be reduced.

[0040] In addition, according to the present invention, the pressing jig portion presses and fixes the wafer to the vacuum chuck portion, thereby preventing the vacuum pad portion from being detached due to external influence. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 A plan view briefly showing a wafer processed in a substrate processing apparatus according to a first embodiment of the present invention.

[0042] Figure 2 A side view briefly showing a wafer processed in a substrate processing apparatus according to a first embodiment of the present invention.

[0043] Figure 3 A side view briefly showing a substrate processing apparatus according to a first embodiment of the present invention.

[0044] Figure 4 A side view briefly showing a state in which the interval between a plurality of molds is enlarged as the vacuum chuck portion rises in a substrate processing apparatus according to a first embodiment of the present invention.

[0045] Figure 5 A side view briefly showing a substrate processing apparatus according to a second embodiment of the present invention.

[0046] Figure 6A side view for briefly showing a substrate processing apparatus according to a third embodiment of the present invention.

[0047] Figure 7 A cross-sectional view for briefly showing a substrate processing apparatus according to a first embodiment of the present invention.

[0048] Figure 8 A cross-sectional view for briefly showing a state in which a vacuum chuck unit in a substrate processing apparatus according to a first embodiment of the present invention is raised by a certain height through a moving module.

[0049] Figure 9 A cross-sectional view for briefly showing an example of a moving module in a substrate processing apparatus according to a first embodiment of the present invention.

[0050] Figure 10 A cross-sectional view for briefly showing another example of a moving module in a substrate processing apparatus according to a first embodiment of the present invention.

[0051] Figure 11 A cross-sectional view for briefly showing still another example of a moving module in a substrate processing apparatus according to a first embodiment of the present invention.

[0052] Figure 12 A plan view for briefly showing a clamping module in a substrate processing apparatus according to a first embodiment of the present invention.

[0053] Figure 13 A plan view for briefly showing a state in which a clamping base of a clamping module in a substrate processing apparatus according to a first embodiment of the present invention is rotated by a certain angle.

[0054] Figure 14 A side view for briefly showing a state in which a clamping link portion and a wafer restricting portion of a clamping module in a substrate processing apparatus according to a first embodiment of the present invention are provided on a rotating chuck portion.

[0055] Figure 15 A perspective view for briefly showing a first clamping link portion and a wafer restricting portion of a clamping module in a substrate processing apparatus according to a first embodiment of the present invention.

[0056] Figure 16 A cross-sectional view for briefly showing a state in which an annular cover portion is provided on a peripheral portion of a rotating chuck portion and a vacuum chuck portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0057] Figure 17 A cross-sectional view for briefly showing a state in which a second clamping link portion and a cover restricting portion are provided on a rotating chuck portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0058] Figure 18A perspective view briefly showing a state in which a second clamping link portion and a cover restricting portion are provided in a substrate processing apparatus according to a first embodiment of the present invention.

[0059] Figure 19 A cross-sectional view briefly showing a cover restricting portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0060] Figure 20 A cross-sectional view briefly showing a state in which an upper surface of a retainer ring portion in a substrate processing apparatus according to a first embodiment of the present invention is provided lower than an upper surface of a mold.

[0061] Figure 21 A cross-sectional view briefly showing a state in which an adsorption pad portion is provided in a vacuum chuck portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0062] Figure 22 A cross-sectional view briefly showing a state in which a pressure ring portion is pressurized by an annular cover portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0063] Figure 23 A cross-sectional view briefly showing another example of an annular cover portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0064] Figure 24 A cross-sectional view briefly showing a state in which a fluid supply portion is connected to a seal ring portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0065] Figure 25 A cross-sectional view briefly showing a state in which a seal force strengthening portion is provided to pressurize a seal ring portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0066] Figure 26 A cross-sectional view briefly showing a state in which an inner side of a seal ring portion is embedded in an interior of a second vacuum chuck in a substrate processing apparatus according to a first embodiment of the present invention.

[0067] Figure 27 A cross-sectional view briefly showing a state in which an annular cover portion pressurizes a gasket to seal in a substrate processing apparatus according to a first embodiment of the present invention.

[0068] Figure 28 A flowchart briefly showing a substrate etching method in a substrate processing method according to a first embodiment of the present invention.

[0069] Figure 29 A flowchart briefly showing a substrate cleaning method in a substrate processing method according to a first embodiment of the present invention.

[0070]

Explanation of Reference Numerals

[0071] 10: Wafer; 11: Mold; 12: Bonding sheet; 13: Retaining ring portion; 110: Driving portion; 111: Rotating shaft; 113: Motor portion; 120: Rotating chuck portion; 130: Vacuum chuck portion; 131: First vacuum chuck; 133: Second vacuum chuck; 134: Sealing groove portion; 135: Hanging portion; 135: Vacuum chamber; 136: Vacuum port portion; 137: Fixed groove portion; 140: Ring cover portion; 141: Cover body portion; 142: Restricting rib portion; 143: Cover pressing portion; 144: Sealing protrusion portion; 145: Locking pin; 145a: Reducing portion; 147: Locking groove portion; 150: Clamping module; 151: Clamping base; 152: Base body portion; 153: Guide portion; 154: Base gear portion; 155: Clamping rotating portion; 160: First clamping link portion; 161: First guide slider; 162: First link member; 163: First link gear portion; 164: First guide block; 165: First guide roller; 170: Wafer restricting portion; 171: Fixture shaft portion; 172: Fixture gear portion; 173: Fixture link portion; 174: Fixture support portion; 175: Pressing fixture portion; 175a: Fixture rotating portion; 175b: Pressing finger portion; 180: Second clamping link portion; 181: Second guide slider; 182: Second link member; 183: Second link gear portion; 184: Second guide block; 185: Second guide roller; 190: Cover restricting portion; 191: Cover restricting shaft portion; 192: Restricting gear portion; 192a: Rotation preventing portion; 193: Second shaft coupling portion; 193a: Rotation preventing groove portion; 194: Elastic member; 195: Height adjusting portion; 196: Position fixing portion; 197: Cover restricting bar; 198: Restricting roller portion; 200: Moving module; 201: Medium flow path portion; 203: Moving rod portion; 205: Cylinder portion; 207: Electromagnetic coil portion (solenoid unit); 210: Adsorption pad portion; 211: Adsorption body portion; 213: Flatness management portion; 215: Pressing and fixing portion; 220: Sealing ring portion; 221: Deformation space portion; 222: Allowable space portion; 223: Fluid supply portion; 223a: Supply pipeline; 223b: Discharge pipeline; 225: Sealing force strengthening portion; 225a: Strengthening rod portion; 225b: Strengthening spring. Detailed implementation

[0072] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the accompanying drawings. In the process of describing the substrate processing apparatus and the substrate processing method, the thickness of the lines shown in the drawings or the dimensions of the constituent elements may be exaggerated for clarity and convenience of explanation. Additionally, the terms hereinafter are defined in consideration of the functions in the present invention and may vary according to the intentions or customs of users and operators. Therefore, these terms should be defined based on the overall content of the present invention.

[0073] Figure 1 To briefly show a plan view of a wafer processed in a substrate processing apparatus according to a first embodiment of the present invention, Figure 2 To briefly show a side view of a wafer processed in a substrate processing apparatus according to a first embodiment of the present invention, Figure 3 To briefly show a side view of a substrate processing apparatus according to a first embodiment of the present invention, Figure 4 To briefly show a side view of a state in which the interval between a plurality of dies expands as the vacuum chuck unit rises in a substrate processing apparatus according to a first embodiment of the present invention.

[0074] Refer to Figures 1 to 4 , a substrate processing apparatus according to a first embodiment of the present invention includes a rotary chuck unit 120, a vacuum chuck unit 130, a clamping module 150, and a moving module 200.

[0075] The substrate processing apparatus etches and cleans the wafer 10. In the etching process, an etching solution is sprayed onto the wafer 10. The etched wafer 10 forms a plurality of dies 11 in a matrix shape as it is cut in the separation process. In the cleaning process, foreign substances attached to the plurality of wafers 10 are removed as a cleaning solution is sprayed onto the wafer 10. The cleaning solution can be various types such as deionized water (DI-water). The etching solution and the cleaning solution supplied to the substrate processing apparatus in the etching process and the cleaning process are referred to as supply liquids.

[0076] The wafer 10 includes a plurality of dies 11 arranged in a matrix shape, an attachment sheet 12 to which the plurality of dies 11 are attached, and a retaining ring portion 13 connected to the outer periphery of the attachment sheet 12 to tightly support the attachment sheet 12. The attachment sheet 12 is formed of a horizontally stretchable material. As the attachment sheet 12 is tightened by the retaining ring portion 13, the positions of the plurality of dies 11 are fixed, so that the thin dies 11 maintain a flat state.

[0077] The rotary chuck unit 120 is rotatably provided on the drive unit 110. The rotary chuck unit 120 can be integrally formed in a disc shape.

[0078] The drive unit 110 includes a rotary shaft 111 connected to the center of rotation of the rotary chuck unit 120 and a motor unit 113 provided on the rotary shaft 111. The motor unit 113 includes a stator (not shown) provided inside a housing (not shown) and a rotor (not shown) disposed inside the stator and arranged to surround the rotary shaft 111. In addition, the drive unit 110 can adopt a belt drive method in which the rotary shaft 111 is rotated by a belt or a chain drive method in which the rotary shaft 111 is rotated by a chain. As long as the rotary chuck unit 120 can be rotated, the drive unit 110 can adopt various shapes.

[0079] A vacuum flow path portion 115 is formed on the rotary shaft 111 (refer toFigure 7 and Figure 9 ) to evacuate the vacuum chuck portion 130. The vacuum flow path portion 115 is formed along the length direction of the rotation axis 111. The vacuum chuck portion is formed with a vacuum chamber 135 in a manner connected to the vacuum flow path portion.

[0080] The vacuum chuck portion 130 is disposed on the rotary chuck portion 120 and is for placing the wafer 10. When the drive unit 110 is driven, the vacuum chuck portion 130 rotates together with the rotary chuck portion 120. At this time, when an etching process is performed in the substrate processing apparatus, the wafer 10 in a state where it is not cut into a plurality of dies 11 is placed on the vacuum chuck portion 130. When a cleaning process is performed in the substrate processing apparatus, the wafer 10 in a state where it is cut into a plurality of dies 11 is placed on the vacuum chuck portion 130. When the wafer 10 is cut into the dies 11, foreign matter may remain in the gaps between the surfaces of the dies 11.

[0081] The clamping module 150 (refer to Figure 7 ) is provided on the vacuum chuck portion 130 to fix the retainer ring portion 13 of the wafer 10 to the vacuum chuck portion 130. The clamping module 150 fixes the retainer ring portion 13 to the outer peripheral portion of the vacuum chuck portion 130 by pressing the retainer ring portion 13 downward. Therefore, when the rotary chuck portion 120 and the vacuum chuck portion 130 rotate, the clamping module 150 prevents the position of the wafer 10 from changing, so that the wafer 10 maintains a flat state.

[0082] The moving module 200 is provided in such a way as to move the vacuum chuck portion 130 or the clamping module 150 to widen the interval between the dies 11 on the wafer 10. In a state where the clamping module 150 fixes the retainer ring portion 13 of the wafer 10 to the outer peripheral portion of the vacuum chuck portion 130, if the moving module 200 moves, the wafer 10 is pressed by the movement of the moving module 200. At this time, as the bonding sheet 12 of the wafer 10 is stretched in the radial direction, the bonding sheet 12 grows in the radial direction, and as the bonding sheet 12 grows in the radial direction, the interval between the plurality of dies 11 widens. When the cleaning liquid is sprayed onto the plurality of dies 11 in a state where the interval between the plurality of dies 11 is widened, the foreign matter attached to the surface of the dies 11 and the foreign matter located in the gaps between the plurality of dies 11 can be easily removed by the cleaning liquid. Therefore, the cleaning performance of foreign matter on the wafer 10 can be significantly improved. In addition, as the cleaning performance of the wafer 10 is significantly improved, the defect rate of the wafer 10 can be significantly reduced.

[0083] With the position of the retainer ring portion 13 of the wafer 10 fixed, the interval between the dies 11 is widened as the plurality of dies 11 move, or with the position of the plurality of dies 11 fixed, the interval between the dies 11 is widened as the retainer ring portion 13 moves. This will be described in detail below.

[0084] The moving module 200 is disposed on the rotating chuck portion 120 to move the vacuum chuck portion 130. For example, the moving module 200 moves the vacuum chuck portion 130 upward, and the rotating chuck portion 120 remains fixed in position. At this time, the peripheral portion of the vacuum chuck portion 130 supports the bonding piece 12 of the wafer 10. As the moving module 200 drives the vacuum chuck portion 130 to move upward and the rotating chuck portion 120 does not rise, the bonding piece 12 rises and grows in the radial direction while the retainer ring portion 13 of the wafer 10 is fixed in position. As the bonding piece 12 grows in the radial direction, the interval between the plurality of molds 11 expands.

[0085] Figure 5 FIG. is a side view schematically showing a substrate processing apparatus according to a second embodiment of the present invention.

[0086] Reference Figure 5 , the moving module 200 is disposed on the rotating chuck portion 120 to move the clamping module 150. For example, the moving module 200 moves the clamping module 150 downward. At this time, the peripheral portion of the vacuum chuck portion 130 supports the bonding piece 12 of the wafer 10. As the moving module 200 drives, the clamping module 150 moves downward and the rotating chuck portion 120 and the vacuum chuck portion 130 do not rise. Therefore, with the retainer ring portion 13 descending while the plurality of molds 11 of the wafer 10 are fixed in position on the vacuum chuck portion 130, the bonding piece 12 grows in the radial direction. As the bonding piece 12 grows in the radial direction, the interval between the plurality of molds 11 expands.

[0087] Figure 6 FIG. is a side view schematically showing a substrate processing apparatus according to a third embodiment of the present invention.

[0088] Reference Figure 6 , the moving module 200 is disposed on the rotating chuck portion 120 to move the clamping module 150 upward. A structural member (not shown) for supporting the clamping module 150 in a liftable manner is provided on the outer peripheral portion of the rotating chuck portion 120. Structural members such as an annular cover portion 140 for pressing a part of the bonding piece 12 located inside the retainer ring portion 13 are provided on the upper side of the outer peripheral portion of the rotating chuck portion 120. At this time, the bonding piece 12 of the wafer 10 is supported by the structural members such as the annular cover portion 140 so as not to rise. As the moving module 200 drives, the clamping module 150 moves upward and the rotating chuck portion 120 and the vacuum chuck portion 130 do not rise. Therefore, with the retainer ring portion 13 rising while the plurality of molds 11 of the wafer 10 are fixed in position on the vacuum chuck portion 130, the bonding piece 12 grows in the radial direction. As the bonding piece 12 grows in the radial direction, the interval between the plurality of molds 11 expands.

[0089] The moving module 200 can adopt various shapes as long as it can move the vacuum chuck unit 130 or the clamping module 150. Embodiments of the moving module 200 will be described below.

[0090] Figure 7 To briefly show a sectional view of a substrate processing apparatus according to a first embodiment of the present invention, Figure 8 To briefly show a sectional view of a state in which the vacuum chuck unit in a substrate processing apparatus according to a first embodiment of the present invention rises by a certain height, Figure 9 To briefly show a sectional view of an example of a moving module in a substrate processing apparatus according to a first embodiment of the present invention, Figure 10 To briefly show a sectional view of another example of a moving module in a substrate processing apparatus according to a first embodiment of the present invention, Figure 11 To briefly show a sectional view of still another example of a moving module in a substrate processing apparatus according to a first embodiment of the present invention.

[0091] Referring to Figures 7 to 9 , the moving module 200 includes a medium flow channel portion 201 and a moving rod portion 203. The medium flow channel portion 201 can be disposed inside the rotating shaft 111 along the length direction of the rotating shaft 111. The moving medium can be air or gas. The moving rod portion 203 moves up and down by the pressure of the moving medium and is disposed in a manner of contacting the lower portion of the vacuum chuck unit 130. The moving rod portion 203 can be provided with a return spring to return the moving medium to its original position when the pressure of the moving medium is released. A plurality of the moving rod portion 203 and the medium flow channel portion 201 can be provided along the circumferential direction of the rotating shaft 111. When a plurality of the moving rod portion 203 raises and lowers the vacuum chuck unit 130, the vacuum chuck unit 130 can be raised and lowered while maintaining a horizontal state.

[0092] Referring to Figure 10 , the moving module 200 can include a cylinder portion 205 that moves the vacuum chuck unit 130 or the clamping module 150. The cylinder portion 205 can be disposed on the rotating chuck unit 120 to raise and lower the vacuum chuck unit 130 or disposed on the rotating chuck unit 120 to move the clamping module 150. As fluid is supplied to or discharged from the cylinder portion 205, the cylinder portion 205 is driven, and thus the vacuum chuck unit 130 or the clamping module 150 can move. When the cylinder portion 205 is used as the moving module 200, there is no need to provide an additional medium flow channel portion 201 on the driving unit 110, and thus the driving unit 110 can be formed with a simple structure.

[0093] Referring to Figure 11, the moving module 200 may include an electromagnetic coil unit 207 that moves the vacuum chuck unit 130 or the clamping module 150. The electromagnetic coil unit 207 may be disposed on the rotary chuck unit 120 to lift the vacuum chuck unit 130 or to move the clamping module 150. As power is supplied to or cut off from the electromagnetic coil unit 207, the electromagnetic coil unit 207 is driven, so that the vacuum chuck unit 130 or the clamping module 150 can move. When the cylinder unit 205 is used as the moving module 200, there is no need to provide an additional medium flow path unit 201 on the driving unit 110, so that the driving unit 110 can be formed with a simple structure.

[0094] The above-described moving module 200 may adopt various shapes, but the shape in which the moving module 200 lifts the vacuum chuck unit 130 will be described in detail below.

[0095] Figure 12 To briefly show a plan view of the clamping module in the substrate processing apparatus according to the first embodiment of the present invention, Figure 13 To briefly show a plan view of a state in which the clamping base of the clamping module in the substrate processing apparatus according to the first embodiment of the present invention rotates by a certain angle, Figure 14 To briefly show a side view of a state in which the clamping link portion and the wafer restricting portion of the clamping module in the substrate processing apparatus according to the first embodiment of the present invention are disposed on the rotary chuck unit, Figure 15 To briefly show a perspective view of the first clamping link portion and the wafer restricting portion of the clamping module in the substrate processing apparatus according to the first embodiment of the present invention.

[0096] Refer to Figures 12 to 15 , the vacuum chuck unit 130 includes a first vacuum chuck 131 and a second vacuum chuck 133. The first vacuum chuck 131 is disposed on the rotary chuck unit 120 so as to rotate together with the rotary chuck unit 120, and the first vacuum chuck 131 forms a vacuum pressure to adsorb the wafer 10. The second vacuum chuck 133 is mounted on the first vacuum chuck 131 and the wafer 10 is mounted thereon, and the second vacuum chuck 133 is provided to be lifted by the moving module 200 to widen the interval of the mold 11. The first vacuum chuck 131 and the second vacuum chuck 133 may be integrally formed in a disc shape.

[0097] A medium flow path portion 201 is formed on the rotation shaft 111 to supply air to the first vacuum chuck 131. The medium flow path portion 201 is formed inside the rotation shaft 111 along the length direction of the rotation shaft 111. A plurality of adsorption hole portions (not shown) are formed on the second vacuum chuck 133, and the adsorption hole portions communicate with the medium flow path portion 201 of the first vacuum chuck 131 to adsorb the wafer 10. The plurality of adsorption hole portions may be arranged in a concentric circle shape along the circumferential direction of the second vacuum chuck 133. When a vacuum pressure is formed on the medium flow path portion 201, the wafer 10 is tightly attached to the upper surface of the second vacuum chuck 133 by the vacuum adsorption force of the adsorption hole portions. Therefore, in the substrate processing apparatus, the flatness of the wafer 10 can be maintained during the etching process or the cleaning process of the wafer 10.

[0098] The clamping module 150 includes a clamping base 151, a clamping rotating portion 155, a plurality of first clamping link portions 160, and a plurality of wafer restricting portions 170.

[0099] The clamping base 151 is disposed on the rotating chuck portion 120. The clamping rotating portion 155 is connected to the clamping base 151 to rotate the clamping base 151. The plurality of first clamping link portions 160 are respectively connected to the clamping base 151 in a radial manner and move when the clamping base 151 rotates. The plurality of wafer restricting portions 170 are respectively connected to the first clamping link portions 160 to fix the retainer ring portion 13 of the wafer 10 to the vacuum chuck portion 130 when the first clamping link portions 160 move. The clamping base 151 is disposed in a concentric manner with the rotating chuck portion 120. The clamping base 151, the clamping rotating portion 155, and the first clamping link portions 160 are disposed inside the rotating chuck portion 120, and the wafer restricting portions 170 are disposed on the outer peripheries of the rotating chuck portion 120 and the vacuum chuck portion 130.

[0100] When the clamping rotating portion 155 is driven, as the clamping base 151 rotates by a certain angle, the plurality of first clamping link portions 160 move along the radial direction of the clamping base 151. As the plurality of first clamping link portions 160 move simultaneously, the plurality of wafer restricting portions 170 press and fix the retainer ring portion 13 of the wafer 10 to the outer peripheral portion of the first vacuum chuck 131. As the clamping base 151 rotates, the plurality of first clamping link portions 160 and the plurality of wafer restricting portions 170 are driven simultaneously. Therefore, the wafer 10 can be restricted to the vacuum chuck portion 130 by using one clamping rotating portion 155. Therefore, the number of clamping rotating portions 155 provided in the clamping module 150 can be reduced.

[0101] The clamping base 151 includes a base body portion 152, a plurality of guide portions 153, and a base gear portion 154.

[0102] The base body part 152 is formed in an annular shape so as to be concentric with the rotation axis 111 of the rotary chuck part 120. The base body part 152 is disposed inside the rotary chuck part 120. A plurality of guide parts 153 are formed on the base body part 152 so that the first clamping link part 160 is movably coupled to the plurality of guide parts 153. The number of the plurality of guide parts 153 is twice the number of the first clamping link parts 160 and is formed at equal intervals along the circumferential direction of the base body part 152. Each of the plurality of guide parts 153 is coupled with one first clamping link part 160. A base gear part 154 is formed on the base body part 152 and is connected to the clamping rotation part 155. The base gear part 154 is disposed on the inner circumferential surface of the base body part 152 in an arc shape. As the clamping rotation part 155 is driven, the base gear part 154 rotates, and as the base body part 152 rotates together with the base gear part 154, the first clamping link part 160 moves in the radial direction of the base body part 152.

[0103] The guide part 153 is formed to be inclined with respect to the radius of the base body part 152. The guide part 153 may be a guide hole part. The guide part 153 may be a guide groove or a guide projection part. Since the guide part 153 is formed to be inclined with respect to the radius of the base body part 152, as the base body part 152 rotates by a certain angle, the first clamping link part 160 linearly moves in the radial direction of the base body part 152.

[0104] The first clamping link part 160 includes a first guide slider 161, a first link member 162, and a first link gear part 163. The first guide slider 161 is movably coupled to the guide part 153. The first link member 162 is connected to the first guide slider 161 and linearly moves in the radial direction of the base body part 152 when the first guide slider 161 moves. The first link member 162 is formed in a straight bar shape. The first link gear part 163 is formed on the first link member 162 so as to mesh and move with the wafer restricting part 170. The first link gear part 163 is formed in a rack shape parallel to the length direction of the first link member 162.

[0105] The first clamping link part 160 further includes a first guide block 164, and the first link member 162 is linearly movably coupled to the first guide block 164. The first guide block 164 prevents the first link member 162 from rotating in the circumferential direction of the base body part 152 when the base body part 152 rotates. The first guide block 164 may be provided with first guide rollers 165 to rollingly contact both sides of the first link member 162 when the first link member 162 linearly moves. Therefore, when the first guide slider 161 moves along with the guide part 153 when the base body part 152 rotates, the first link member 162 can linearly move without rotating.

[0106] The wafer restricting part 170 includes: a chuck shaft part 171 rotatably provided on the rotary chuck part 120; a chuck gear part 172 formed on the chuck shaft part 171 to mesh with the first link gear part 163; a chuck link part 173 connected to the chuck shaft part 171; a chuck support part 174 fixed to the rotary chuck part 120; and a pressing chuck part 175 rotatably provided on the chuck support part 174 and rotating to press and release the retaining ring part 13 of the wafer 10 when the chuck link part 173 moves. The chuck shaft part 171 is arranged perpendicular to the length direction of the first link member 162. The chuck gear part 172 is formed in the shape of a pinion. The chuck link part 173 connects the chuck shaft part 171 and the chuck support part 174 through a plurality of links (not shown). The pressing chuck part 175 is formed in an arc shape to press and fix the retaining ring part 13 of the wafer 10 in the circumferential direction.

[0107] The pressing chuck part 175 includes: a chuck rotating part 175a hingedly coupled to the chuck support part 174 and connected to the chuck link part 173; and a pressing finger part 175b formed on the chuck rotating part 175a to press and release the retaining ring part 13 of the wafer 10. When the first clamping link part 160 moves linearly and the chuck gear part 172 meshes and rotates with the first link gear part 163, the chuck rotating part 175a rotates on the chuck support part 174. As the chuck rotating part 175a rotates, the pressing finger part 175b presses and releases the retaining ring part 13 of the wafer 10.

[0108] Figure 16 For briefly showing a sectional view of a state where a ring cover part is provided at the periphery of a rotary chuck part and a vacuum chuck part in a substrate processing apparatus according to a first embodiment of the present invention, Figure 17 For briefly showing a sectional view of a state where a second clamping link part and a cover restricting part are provided on a rotary chuck part in a substrate processing apparatus according to a first embodiment of the present invention, Figure 18 For briefly showing a perspective view of a state where a second clamping link part and a cover restricting part are provided in a substrate processing apparatus according to a first embodiment of the present invention, Figure 19 For briefly showing a sectional view of a cover restricting part in a substrate processing apparatus according to a first embodiment of the present invention.

[0109] Reference Figures 16 to 19, the substrate processing apparatus further includes an annular cover portion 140 which is disposed along the outer periphery of the vacuum chuck portion 130 to press the bonding piece 12 of the wafer 10 so as to seal the outer peripheral portion side of the vacuum chuck portion 130, and is fixed to the rotary chuck portion 120 by a clamping module 150. The annular cover portion 140 is formed in an annular shape to press the bonding piece 12 of the wafer 10 so as to seal the outer peripheral portion side of the vacuum chuck portion 130, thereby minimizing the damage to the bonding piece 12 caused by the etching solution and preventing the contamination or breakage of the rotary chuck portion 120 and the vacuum chuck portion 130 caused by the etching solution.

[0110] The annular cover portion 140 includes: a cover body portion 141 formed to surround the outer periphery of the vacuum chuck portion 130; a restricting rib portion 142 formed to protrude inward from the lower side of the cover body portion 141; and a cover pressing portion 143 extending inward from the upper side of the cover body portion 141 to press the bonding piece 12 of the wafer 10. The cover pressing portion 143 is formed to press a portion of the bonding piece 12 that is spaced approximately 1 mm from the outermost contour of the mold 11 on the bonding piece 12. The cover pressing portion 143 may be formed such that the thickness gradually thins towards the end. Excluding a width of about 1 mm of the cover, the portion of the bonding piece 12 between the retaining ring portion 13 and the mold 11 is sealed by the cover pressing portion 143, thereby minimizing the damage to the bonding piece 12 caused by the etching solution.

[0111] The apparatus further includes a locking pin 145 protruding from the outer periphery of the rotary chuck portion 120, and a locking groove portion 147 for inserting the locking pin 145 is formed on the outer periphery of the annular cover portion 140. Therefore, when the annular cover portion 140 is disposed on the outer periphery of the rotary chuck portion 120, the setting position of the annular cover portion 140 can be accurately matched by inserting the locking groove portion 147 of the annular cover portion 140 onto the locking pin 145.

[0112] The clamping module 150 includes a plurality of second clamping link portions 180 and a plurality of cover restricting portions 190.

[0113] A plurality of second clamping link portions 180 are radially connected to the clamping base 151 and move when the clamping base 151 rotates. A plurality of cover restricting portions 190 are connected to the second clamping link portions 180 to fix the ring cover portion 140 to the rotary chuck portion 120 when the second clamping link portions 180 move. Driven by the clamping rotating portion 155, the base gear portion 154 rotates. As the base body portion 152 rotates together with the base gear portion 154, the second clamping link portions 180 move in the radial direction of the base body portion 152. At this time, when the base body portion 152 of the clamping base 151 rotates, the plurality of first clamping link portions 160 and the plurality of second clamping link portions 180 move simultaneously. As the first clamping link portions 160 move, the retainer ring portion 13 of the wafer 10 is fixed to the vacuum chuck portion 130. As the second clamping link portions 180 move, the ring cover portion 140 is fixed to the rotary chuck portion 120. Therefore, by using one clamping base 151 and one clamping rotating portion 155, the wafer 10 and the ring cover portion 140 can be simultaneously fixed to the vacuum chuck portion 130 and the rotary chuck portion 120, thus simplifying the structure of the substrate processing apparatus.

[0114] The second clamping link portion 180 includes a second guide slider 181, a second link member 182, and a second link gear portion 183.

[0115] The second guide slider 181 is movably coupled to the guide portion 153. The second link member 182 is connected to the second guide slider 181 and linearly moves in the radial direction of the base body portion 152 when the second guide slider 181 moves. The second link gear portion 183 is formed on the second link member 182 to mesh and move with the cover restricting portion 190. The second link member 182 is formed in a straight bar shape. The second link gear portion 183 is formed in a rack shape parallel to the length direction of the second link member 182.

[0116] The second clamping link portion 180 further includes a second guide block 184, and the second link member 182 is linearly movably coupled to the second guide block 184. The second guide block 184 prevents the second link member 182 from rotating in the circumferential direction of the base body portion 152 when the base body portion 152 rotates. The second guide block 184 may be provided with second guide rollers 185 to rollingly contact both sides of the second link member 182 during the linear movement of the second link member 182. Therefore, when the second guide slider 181 moves along with the guide portion 153 when the base body portion 152 rotates, the second link member 182 can move linearly without rotating.

[0117] The cover restricting portion 190 includes: a cover restricting shaft portion 191 rotatably provided on the rotary chuck portion 120; a restricting gear portion 192 formed on the cover restricting shaft portion 191 to engage with the second link gear portion 183; a cover restricting bar 197 connected to the cover restricting shaft portion 191 to press and release the ring cover portion 140; and a restricting roller portion 198 rotatably provided on the cover restricting bar 197 to rollingly contact the ring cover portion 140.

[0118] As the second link member 182 linearly moves, the second link gear portion 183 is driven to engage with the restricting gear portion 192. As the restricting gear portion 192 rotates, the cover restricting shaft portion 191 and the cover restricting bar 197 rotate, and the restricting roller portion 198 moves while rollingly contacting the restricting rib portion 142 of the ring cover portion 140. Accordingly, the restricting roller portion 198 rollingly contacts the restricting rib portion 142 of the ring cover portion 140, so that foreign matter can be prevented from being generated due to wear or scratches on the restricting rib portion 142 of the ring cover portion 140. Therefore, foreign matter entering the wafer 10 located inside the ring cover portion 140 can be suppressed, and the rejection rate can be reduced.

[0119] The cover restricting shaft portion 191 includes: a restricting gear portion 192 formed to engage with the second link gear portion 183; a shaft coupling portion 193 shaft-coupled to the restricting gear portion 192; an elastic member 194 sandwiched between the shaft coupling portion 193 and the restricting gear portion 192; and a height adjusting portion 195 threadedly coupled to the shaft coupling portion 193 and the restricting gear portion 192 to adjust the height of the shaft coupling portion 193. The restricting gear portion 192 and the shaft coupling portion 193 are coaxially provided. The elastic member 194 may be a disc spring. The height adjusting portion 195 is a height adjusting bolt having a threaded portion formed on an outer surface, and a threaded portion is formed inside the restricting gear portion 192 in a manner that the height adjusting portion 195 is threadedly coupled thereto.

[0120] The elastic member 194 is sandwiched between the shaft coupling portion 193 and the restricting gear portion 192, so that play noise caused by the assembly space between the shaft coupling portion 193 and the restricting gear portion 192 can be prevented. In addition, since the height adjusting portion 195 is threadedly coupled to the shaft coupling portion 193 and the restricting gear portion 192, the height of the shaft coupling portion 193 during the assembly of the ring cover portion 140 can be adjusted, and assembly tolerances can be prevented from occurring.

[0121] A rotation preventing portion 192a having a polygonal shape is formed at a central portion of the restricting gear portion 192, and a polygonal rotation preventing groove portion 193a into which the rotation preventing portion 192a can be inserted may be formed inside the shaft coupling portion 193. Since the rotation preventing portion 192a and the rotation preventing groove portion 193a are formed in a polygonal shape, axial and rotational assembly errors between the restricting gear portion 192 and the shaft coupling portion 193 can be reduced. In addition, the assembly error can be further reduced by increasing the surface roughness of the rotation preventing portion 192a and the rotation preventing groove portion 193a.

[0122] The cover limiting shaft portion 191 further includes a position fixing portion 196 which is threadedly coupled to the outside of the shaft coupling portion 193 to limit the height adjusting portion 195 to the shaft coupling portion 193. After the height adjusting portion 195 is threadedly fixed to the shaft coupling portion 193 and the height of the shaft coupling portion 193 is adjusted, the position fixing portion 196 presses the height adjusting portion 195 as it is threadedly coupled to the shaft coupling portion 193, thereby fixing the position of the height adjusting portion 195. Therefore, it is possible to prevent the height of the shaft coupling portion 193 from changing through the position fixing portion 196.

[0123] It further includes a locking pin 145 provided in a protruding manner on the peripheral portion of the rotary chuck portion 120, and a locking groove portion 147 for inserting the locking pin 145 is formed on the peripheral portion of the ring cover portion 140. A reduced portion 145a is formed on the upper side of the locking pin 145 to guide the insertion of the locking groove portion 147. When the ring cover portion 140 is placed on the rotary chuck portion 120, the locking pin 145 is inserted into the locking groove portion 147 to guide the ring cover portion 140 to the correct setting position. Therefore, the setting convenience of the ring cover portion 140 can be improved. In addition, it is possible to prevent the ring cover portion 140 from sliding in the circumferential direction when the rotary chuck portion 120 rotates.

[0124] Figure 20 For briefly showing a sectional view of the state in which the upper surface of the retainer portion in the substrate processing apparatus according to the first embodiment of the present invention is provided to be lower than the upper surface of the vacuum chuck portion, Figure 21 For briefly showing a sectional view of the state in which the adsorption pad portion is provided on the vacuum chuck portion in the substrate processing apparatus according to the first embodiment of the present invention.

[0125] Reference Figures 20 to 21 , the height of the retainer portion 13 of the wafer 10 is the same as or lower than the height of the upper surface of the vacuum chuck portion 130. Therefore, when the rotary chuck portion 120 rotates the wafer 10 and sprays the processing liquid onto the wafer 10, the processing liquid on the upper side of the wafer 10 can be smoothly ejected in the radial direction of the wafer 10 by the centrifugal force. In addition, it is possible to prevent the processing liquid discharged in the radial direction of the wafer 10 from hitting the retainer portion 13 and reflecting or rebounding (rebound) toward the rotation center of the wafer 10. Therefore, it is possible to prevent the rebounding processing liquid from leaving marks on the surface of the wafer 10. Therefore, the cleaning efficiency of the wafer 10 can be improved.

[0126] The vacuum chuck portion 130 further includes a plurality of adsorption pad portions 210 (reference Figure 22 and Figure 23), the adsorption pad part is arranged at the vacuum port part of the vacuum chuck part 130 to adsorb the retaining ring part 13 of the wafer 10. A plurality of adsorption pad parts 210 are arranged along the circumferential direction of the vacuum chuck part 130. The plurality of adsorption pad parts 210 are arranged on the outer periphery of the first vacuum chuck 131. The adsorption pad part 210 is formed of a cushioning material such as rubber material or polyurethane material. The adsorption pad part 210 adsorbs the retaining ring part 13 of the wafer 10 to fix it to the vacuum chuck part 130, so that the position change of the wafer 10 can be prevented when the vacuum chuck part 130 rotates.

[0127] The adsorption pad part 210 includes an adsorption main body part 211, a flatness management part 213 and a press-fitting fixing part 215.

[0128] The adsorption main body part 211 is arranged on the upper side of the vacuum port part 136 to adsorb the wafer 10. The adsorption main body part 211 is formed in a flat shape to place and closely adhere to the lower surface of the wafer 10. The flatness management part 213 is formed in a manner of inclining from the outer peripheral part on the lower side of the adsorption main body part 211 to the central part side for the vacuum port part 136 to be inserted. The inclined surface of the vacuum port part 136 and the inclined surface of the adjacent flatness management part 213 maintain a distance of about 0.02 mm or less and are formed in an inclined manner. The upper side of the flatness management part 213 serves as the contact reference surface of the retaining ring part 13 of the wafer 10. As the flatness management part 213 uniformly contracts in the circumferential direction when the wafer 10 is adsorbed, the flatness of the adsorption main body part 211 is maintained and the vibration is reduced. The press-fitting fixing part 215 is formed on the flatness management part 213 so as to be press-fitted into the fixing groove part 137 of the vacuum chuck part 130. The fixing groove part 137 is formed in a recessed manner to surround the vacuum port part 136. The press-fitting fixing part 215 is formed in a manner that its thickness is larger than the thickness of the flatness management part 213 so as to be press-fitted into the fixing groove part 137. The press-fitting fixing part 215 and the fixing groove part 137 are formed in a ring shape.

[0129] Figure 22 It is a cross-sectional view briefly showing the state of the ring cover part pressure sealing ring part in the substrate processing apparatus according to the first embodiment of the present invention.

[0130] Reference Figure 22, the bonding sheet 12 of the wafer 10 is closely attached to the vacuum chuck portion 130, and further includes a seal ring portion 220 pressed by the ring cover portion 140. The seal ring portion 220 is formed of a cushioning material. At this time, the seal ring portion 220 is formed in a ring shape along the outer periphery of the second vacuum chuck 133. When the retainer ring portion 13 of the wafer 10 is placed on the adsorption pad portion 210, the bonding sheet 12 portion between the mold 11 and the retainer ring portion 13 of the wafer 10 corresponds to the seal ring portion 220. The ring cover portion 140 is restricted by the cover restricting portion 190 of the clamping module 150, and the ring cover portion 140 presses the bonding sheet 12 to closely attach it to the seal ring portion 220. The seal ring portion 220 is elastically deformed by the pressing force of the ring cover portion 140, so that the bonding sheet 12 can be more tightly pressed by the pressing force of the ring cover portion 140 and the restoring force of the seal ring portion 220. Therefore, the immersion of the processing liquid between the ring cover portion 140 and the bonding sheet 12 can be cut off.

[0131] A deformation space portion 221 is formed inside the seal ring portion 220 for the seal ring portion 220 to deform when the ring cover portion 140 is pressed. At this time, a tolerance space 222 is formed in the outer peripheral portion of the second vacuum chuck 133 to allow the deformation of the seal ring portion 220, and a hanging portion 135 for pressing the both side ends of the seal ring portion 220 is formed outside the tolerance space 222. The height of the deformation space portion 221 can be appropriately changed in consideration of the pressing amount of the cover pressing portion 143 of the ring cover portion 140. The deformation space portion 221 is formed along the outer periphery of the cover pressing portion 143 of the ring cover portion 140. The hanging portion 135 restricts the lower side of the seal ring portion 220, so that the seal ring portion 220 can be prevented from separating from the second vacuum chuck 133.

[0132] Figure 23 To briefly show a cross-sectional view of another example of the ring cover portion in the substrate processing apparatus according to the first embodiment of the present invention.

[0133] Reference Figure 23, a sealing projection 144 is formed on the ring cover portion 140 to closely adhere to the sealing ring portion 220. The sealing projection 144 is formed in a ring shape along the outer periphery of the cover pressing portion 143 of the ring cover portion 140. The sealing projection 144 is formed in a concentric manner with the cover pressing portion 143 of the ring cover portion 140. The sealing projection 144 is formed in a manner that faces the width direction center portion of the sealing ring portion 220 or its vicinity. Since the sealing ring portion 220 is formed along the outer periphery of the ring cover portion 140, the cover pressing portion 143 and the sealing projection 144 can doubly press the sealing ring portion 220. Therefore, the portion of the bonding sheet 12 between the outermost contour of the mold 11 and the retainer ring portion 13 in the wafer 10 can be doubly adhered, thus improving the sealing performance between the bonding sheet 12 and the ring cover portion 140. Further, the cover pressing portion 143 of the ring cover portion 140 presses the inner edge portion of the sealing ring portion 220, and the sealing projection 144 presses the center portion of the sealing ring portion 220 or its periphery, so that the overlapping amount between the ring cover portion 140 and the sealing ring portion 220 can be increased. Therefore, the pressing force of the ring cover portion 140 that can reduce the degree of increase in the overlapping amount of the ring cover portion 140 can relatively reduce the precision and specifications of the structural members for increasing the pressing force of the ring cover portion 140.

[0134] Figure 24 A cross-sectional view briefly showing a state in which a fluid supply portion is connected to a sealing ring portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0135] Reference Figure 24 , the vacuum chuck portion 130 further includes a fluid supply portion 223 that is connected to the sealing ring portion 220 to supply fluid to the deformation space portion 221 and discharge fluid from the deformation space portion. Fluids such as air and nitrogen can be supplied to the deformation space portion 221. The fluid supply portion 223 includes a fluid supply pipeline 223a that is connected to the deformation space portion 221 to supply fluid to the deformation space portion 221 and a fluid discharge pipeline 223b that is connected to the deformation space portion 221 to discharge fluid from the deformation space portion 221. When the fluid supply portion 223 supplies fluid to the deformation space portion 221 in a state where the ring cover portion 140 presses the bonding sheet 12 of the wafer 10 to closely adhere to the sealing ring portion 220, as the sealing ring portion 220 expands in volume under the pressure of the fluid supply portion 223, the pressing force between the cover pressing portion 143 of the ring cover portion 140 and the sealing ring portion 220 can be further increased. Therefore, the sealing performance between the ring cover portion 140 and the sealing ring portion 220 can be further improved.

[0136] Figure 25 A cross-sectional view briefly showing a state in which a sealing force strengthening portion is provided to press a sealing ring portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0137] Reference Figure 25, the vacuum chuck portion 130 further includes a sealing force strengthening portion 225a which is disposed in the deformation space portion 221 to elastically support the seal ring portion 220. The sealing force strengthening portion 225a includes a reinforcing rod portion 225a disposed inside the deformation space portion 221 in a manner to support the seal ring portion 220 and a reinforcing spring 225b disposed on the reinforcing rod portion to push the reinforcing rod portion 225a toward the seal ring portion 220 side. Therefore, in a state where the ring cover portion 140 presses the seal ring portion 220, the restoring force of the seal ring portion 220 itself and the elastic force of the sealing force strengthening portion 225a are applied to the bonding piece 12 of the wafer 10, and thus the sealing performance of the ring cover portion 140 and the seal ring portion 220 can be further improved.

[0138] Figure 26 A cross-sectional view briefly showing a state where the inside of the seal ring portion is embedded in the inside of the second vacuum chuck in the substrate processing apparatus according to the first embodiment of the present invention.

[0139] Reference Figure 26 , the inside of the seal ring portion 220 is arranged in a manner to be embedded in the lower side of the outer peripheral surface of the vacuum chuck portion 130. At this time, the center portion in the width direction of the seal ring portion 220 is closer to the outer peripheral surface of the vacuum chuck portion 130. Therefore, the bonding piece 12 portion spaced about 1 mm from the outermost contour of the mold 11 of the wafer 10 faces the center portion in the width direction of the seal ring portion 220 or the vicinity thereof, and thus the end portion of the cover pressing portion 143 of the ring cover portion 140 can press the center portion in the width direction of the seal ring portion 220 or the vicinity thereof. Therefore, when the ring cover portion 140 is pressed, the deformation amount of the seal ring portion 220 increases, and thus the pressing force of the ring cover portion 140 can be relatively reduced.

[0140] Figure 27 A cross-sectional view briefly showing a state where the ring cover portion presses the bonding pad to seal in the substrate processing apparatus according to the first embodiment of the present invention.

[0141] Reference Figure 27 , a seal groove portion 134 for arranging the seal ring portion 220 is formed on the outer periphery of the outer peripheral surface of the vacuum chuck portion 130, and the ring cover portion 140 presses the bonding piece 12 portion opposite to the seal groove portion 134 to seal through the tension of the bonding piece 12. When the ring cover portion 140 presses the bonding piece 12 portion opposite to the seal groove portion 134, as the bonding piece 12 expands, the tension of the bonding piece 12 is applied to the cover pressing portion 143 of the ring cover portion 140. Therefore, it is possible to prevent the processing liquid from entering between the ring cover portion 140 and the bonding piece 12 by using the tension of the bonding piece 12 and the pressing force of the ring cover portion 140.

[0142] Hereinafter, a substrate processing method of the substrate processing apparatus according to an embodiment of the present invention having the above-described configuration will be described.

[0143] The substrate processing method of the substrate processing apparatus includes a substrate etching method for etching the wafer 10 using an etching solution and a substrate cleaning method for cleaning the wafer 10 using a cleaning solution. The substrate etching method and the substrate cleaning method will be described in sequence below.

[0144] First, the substrate etching method in the substrate processing method will be described.

[0145] Figure 28 To briefly show the flowchart of the substrate etching method in the substrate processing method according to the first embodiment of the present invention.

[0146] Refer to Figure 28 , the transfer unit (not shown) transfers the wafer 10 to the vacuum chuck unit 130 (S11). At this time, the transfer unit picks up the wafer 10 and moves it to the upper side of the vacuum chuck unit 130.

[0147] The transfer unit mounts the wafer 10 on the vacuum chuck unit 130 (S12). At this time, as the transfer unit descends, the wafer 10 is mounted on the mounting position of the vacuum chuck unit 130.

[0148] The ring cover unit 140 is disposed at the peripheral portion of the vacuum chuck unit 130 (S13). At this time, as the locking pin 145 of the rotary chuck unit 120 is inserted into the locking groove portion 147 of the ring cover unit 140, the ring cover unit 140 is placed at the peripheral portion of the vacuum chuck unit 130.

[0149] As the clamping module 150 moves, the wafer 10 is fixed to the vacuum chuck unit 130 and the ring cover unit 140 is fixed to the rotary chuck unit 120 (S14). At this time, the clamping rotating portion 155 rotates the clamping base 151 by a certain angle around the rotation center of the vacuum chuck unit 130. As the clamping base 151 rotates, the plurality of first clamping link portions 160 and the plurality of second clamping link portions 180 move toward the central portion side of the vacuum chuck unit 130. The plurality of wafer restricting portions 170 fix the retainer ring portion 13 of the wafer 10 to the vacuum chuck unit 130, and the plurality of cover restricting portions 190 fix the ring cover unit 140 to the rotary chuck unit 120. Therefore, as the clamping base 151 rotates by a certain angle, the wafer restricting portions 170 and the cover restricting portions 190 move simultaneously and fix the wafer 10 and the ring cover unit 140 at the same time.

[0150] In addition, during the etching process, the moving module 200 is kept in a stopped state, so the vacuum chuck unit 130 or the clamping module 150 does not move.

[0151] The rotary chuck unit 120 and the vacuum chuck unit 130 rotate and spray an etching solution onto the wafer 10 to etch the wafer 10 (S15). The etching solution is sprayed onto the wafer 10 and flows in the radial direction by the centrifugal force of the vacuum chuck unit 130 while etching the wafer 10. In addition, as the ring cover unit 140 presses the bonding piece 12 of the wafer 10, it can prevent the etching solution from entering the side of the retaining ring portion 13 of the wafer 10. Therefore, damage to the outer structural members of the retaining ring portion 13 caused by the etching solution can be prevented.

[0152] The control unit determines whether the etching time of the wafer 10 has ended (S16). If the etching time of the wafer 10 has ended, the rotary chuck unit 120 and the vacuum chuck unit 130 stop rotating.

[0153] The moving module 200 returns to the original position, and the clamping module 150 releases the restrictions on the wafer 10 and the ring cover unit 140 (S17, S18). At this time, the clamping rotation unit 155 rotates the clamping base 151 by a certain angle around the rotation center of the vacuum chuck unit 130. As the clamping base 151 rotates, the plurality of first clamping link portions 160 and the plurality of second clamping link portions 180 move to the outside of the vacuum chuck unit 130. The plurality of wafer restricting portions 170 release the retaining ring portion 13 of the wafer 10 from the vacuum chuck unit 130, and the plurality of cover restricting portions 190 release the ring cover unit 140 from the rotary chuck unit 120. Therefore, as the clamping base 151 rotates by a certain angle, the wafer restricting portions 170 and the cover restricting portions 190 move simultaneously and release the wafer 10 and the ring cover unit 140 at the same time.

[0154] The discharging unit (not shown) discharges the wafer 10 from the vacuum chuck unit 130 (S19). After the discharging unit picks up the wafer 10 and raises it, the wafer 10 is moved to the outside of the vacuum chuck unit 130.

[0155] The substrate cleaning method in the substrate processing method will be described below.

[0156] Figure 29 To briefly show the flowchart of the substrate cleaning method in the substrate processing method according to the first embodiment of the present invention.

[0157] Refer to Figure 29 , the transfer unit (not shown) transfers the wafer 10 to the vacuum chuck unit 130 (S21). At this time, the transfer unit picks up the wafer 10 and moves it to the upper side of the vacuum chuck unit 130.

[0158] The transfer unit mounts the wafer 10 on the vacuum chuck unit 130 (S22). At this time, as the transfer unit descends, the wafer 10 is mounted on the mounting position of the vacuum chuck unit 130. In addition, the ring cover unit 140 may not be disposed on the outer periphery of the vacuum chuck unit 130.

[0159] As the clamping module 150 moves, the wafer 10 is fixed to the vacuum chuck portion 130 (S23). At this time, the clamping rotation portion 155 rotates the clamping base 151 by a certain angle around the rotation center of the vacuum chuck portion 130. As the clamping base 151 rotates, the plurality of first clamping link portions 160 move toward the central portion side of the vacuum chuck portion 130. The plurality of wafer restricting portions 170 press and fix the retainer portion 13 of the wafer 10 to the vacuum chuck portion 130. The plurality of lid restricting portions 190 move simultaneously with the plurality of first clamping link portions 160 by the rotation of the clamping base 151.

[0160] The moving module 200 moves the vacuum chuck portion 130 or the clamping module 150 to widen the interval of the mold 11 in the wafer 10 (S24). At this time, the first vacuum chuck 131 forms a vacuum pressure to adsorb the wafer 10, and the moving module 200 moves the second vacuum chuck 133 or the clamping module 150. In a state where the clamping module 150 fixes the retainer portion 13 of the wafer 10 to the outer peripheral portion of the vacuum chuck portion 130, when the moving module 200 moves, the wafer 10 is pressed by the movement of the moving module 200. At this time, as the bonding sheet 12 of the wafer 10 is tightened in the radial direction, the bonding sheet 12 grows in the radial direction. As the bonding sheet 12 grows in the radial direction, the interval between the plurality of molds 11 widens.

[0161] The movement of the vacuum chuck portion 130 or the clamping module 150 by the moving module 200 will be described in detail below.

[0162] The moving module 200 moves the vacuum chuck portion 130 upward (refer to Figure 3 and Figure 4 ). At this time, the moving module 200 is disposed on the rotating chuck portion 120 to be connected to the first vacuum chuck 131 and the second vacuum chuck 133. In addition, the moving module 200 moves the vacuum chuck portion 130 upward, and the position of the rotating chuck portion 120 is fixed. As the moving module 200 is driven, the vacuum chuck portion 130 moves upward, and the rotating chuck portion 120 does not rise. Therefore, in a state where the retainer portion 13 of the wafer 10 is fixed, the bonding sheet 12 rises and grows in the radial direction. As the bonding sheet 12 grows in the radial direction, the interval between the plurality of molds 11 widens.

[0163] The moving module 200 moves the clamping module 150 downward (refer to Figure 5)。At this time, the moving module 200 is disposed around the vacuum chuck portion 130 in a liftable manner. In addition, a structure member (not shown) for supporting the clamping module 150 in a liftable manner may be provided around the rotary chuck portion 120. As the moving module 200 is driven, the clamping module 150 moves downward, and the rotary chuck portion 120 and the vacuum chuck portion 130 do not rise. Therefore, with the retainer portion 13 descending, the bonding sheet 12 grows in the radial direction while the positions of the plurality of dies 11 of the wafer 10 are fixed to the vacuum chuck portion 130. As the bonding sheet 12 grows in the radial direction, the interval between the plurality of dies 11 expands.

[0164] The moving module 200 moves the clamping module 150 upward (refer to Figure 6 )。At this time, the moving module 200 is disposed around the vacuum chuck portion 130 in a liftable manner. In addition, the bonding sheet 12 between the outermost contour of the die 11 and the retainer portion 13 in the wafer 10 is pressed by the support body. The support body may be a ring cover portion 140. A structure member (not shown) for supporting the clamping module 150 in a liftable manner may be provided around the rotary chuck portion 120. As the moving module 200 is driven, the clamping module 150 moves downward, and the rotary chuck portion 120 and the vacuum chuck portion 130 do not rise. Therefore, with the retainer portion 13 ascending, the bonding sheet 12 grows in the radial direction while the positions of the plurality of dies 11 of the wafer 10 are fixed to the vacuum chuck portion 130. As the bonding sheet 12 grows in the radial direction, the interval between the plurality of dies 11 expands.

[0165] The moving module 200 includes a medium flow channel portion 201 and a moving rod portion 203 (refer to Figure 8 and Figure 9 )。The medium flow channel portion 201 is formed in the driving portion 110 to supply the moving medium. The medium flow channel portion 201 may be arranged along the length direction of the rotating shaft 111 inside the rotating shaft 111. The moving medium may be air or gas. The moving rod portion 203 is lifted and lowered by the pressure of the moving medium and is arranged to contact the lower part of the vacuum chuck portion 130. A return spring may be provided on the moving rod portion 203 to reset the moving medium to its original position when the pressure of the moving medium is released. The moving rod portion 203 and the medium flow channel portion 201 may be provided in plurality along the circumferential direction of the rotating shaft 111. When the plurality of moving rod portions 203 lift and lower the vacuum chuck portion 130, the vacuum chuck portion 130 can be lifted and lowered while maintaining a horizontal state.

[0166] The moving module 200 includes a cylinder portion 205 for moving the vacuum chuck portion 130 or the clamping module 150 (refer to Figure 10)。The cylinder part 205 can be disposed below the vacuum chuck part 130 or at the peripheral part of the vacuum chuck part 130. The cylinder part 205 can be provided on the rotary chuck part 120 to lift the vacuum chuck part 130 or to move the clamping module 150. As fluid is supplied to or discharged from the cylinder part 205, the cylinder part 205 is driven, so that the vacuum chuck part 130 or the clamping module 150 can move. When using the cylinder part 205 as the moving module 200, there is no need to provide an additional medium flow channel part 201 on the driving part 110, so that the driving part 110 can be formed with a simple structure.

[0167] The moving module 200 includes an electromagnetic coil part 207 that moves the vacuum chuck part 130 or the clamping module 150 (refer to Figure 11 )。The electromagnetic coil part 207 can be disposed below the vacuum chuck part 130 or at the peripheral part of the vacuum chuck part 130. The electromagnetic coil part 207 can be provided on the rotary chuck part 120 to lift the vacuum chuck part 130 or to move the clamping module 150. As power is connected to and disconnected from the electromagnetic coil part 207, the electromagnetic coil part 207 is driven, so that the vacuum chuck part 130 or the clamping module 150 can move. When using the cylinder part 205 as the moving module 200, there is no need to provide an additional medium flow channel part 201 on the driving part 110, so that the driving part 110 can be formed with a simple structure.

[0168] The rotary chuck part 120 and the vacuum chuck part 130 rotate to spray a cleaning liquid onto the wafer 10 to remove foreign matters from the wafer 10 (S25). The cleaning liquid sprayed onto the wafer 10 flows in the radial direction by the centrifugal force of the vacuum chuck part 130 while cleaning the wafer 10. At this time, by the movement of the moving module 200, the bonding sheet 12 grows in the radial direction, so that the interval between the plurality of dies 11 is widened. When spraying the cleaning liquid onto the plurality of dies 11 in a state where the interval between the plurality of dies 11 is widened, foreign matters attached to the surface of the dies 11 and foreign matters in the gaps between the plurality of dies 11 can be easily removed by the cleaning liquid. Therefore, the foreign matter cleaning performance of the wafer 10 is significantly improved, and the foreign matter removal time can be shortened. In addition, as the cleaning of the wafer 10 is significantly improved, the defective rate of the wafer 10 can be significantly reduced.

[0169] The control part determines whether the cleaning time of the wafer 10 has ended (S26). If the cleaning time of the wafer 10 has ended, the rotary chuck part 120 and the vacuum chuck part 130 stop rotating.

[0170] The moving module 200 returns to the original position, and the clamping module 150 releases the restriction on the wafer 10 (S27, S28). At this time, the clamping rotation part 155 rotates the clamping base 151 by a certain angle around the rotation center of the vacuum chuck part 130. As the clamping base 151 rotates, the plurality of first clamping link parts 160 move outward from the vacuum chuck part 130. The plurality of wafer restricting parts 170 release the retaining ring part 13 of the wafer 10 from the vacuum chuck part 130.

[0171] The discharging part discharges the wafer 10 from the vacuum chuck part 130 (S29). After the discharging part picks up the wafer 10 and raises it, the wafer 10 is moved outward from the vacuum chuck part 130.

[0172] The present invention has been described with reference to the embodiments shown in the accompanying drawings, but these are only examples, and those skilled in the art can understand that various modifications and equivalent other embodiments can be made therefrom.

Claims

1. A substrate processing apparatus, characterized in that, Comprising: A rotating chuck part, which is arranged on a driving part in a rotatable manner; A vacuum chuck part, which is arranged on the rotating chuck part and for placing a wafer; A ring cover part, which is arranged along the peripheral part of the vacuum chuck part to seal the peripheral part side of the vacuum chuck part; And A movable clamping module, which is arranged on the rotating chuck part to fix the ring cover part to the rotating chuck part, wherein, the movable clamping module further includes a clamping base and a plurality of first clamping link parts, the clamping base is arranged on the rotating chuck part, and the plurality of first clamping link parts are respectively connected to the clamping base in a radial manner and move when the clamping base rotates.

2. The substrate processing device according to claim 1, characterized in that The movable clamping module includes: A clamping rotating part, which is connected to the clamping base to rotate the clamping base; A plurality of second clamping link parts, which are connected to the clamping base in a radial manner and move when the clamping base rotates; and A plurality of cover limiting parts, which are connected to the second clamping link parts to fix the ring cover part to the rotating chuck part when the plurality of second clamping link parts move.

3. The substrate processing device according to claim 2, characterized in that The cover limiting part includes: A cover limiting shaft part, which is arranged on the rotating chuck part in a rotatable manner; A limiting gear part, which is connected to a second link gear part; A cover limiting strip, which is connected to the cover limiting shaft part to press and release the ring cover part; and A limiting roller part, which is arranged on the cover limiting strip in a rotatable manner to rollingly contact the ring cover part.

4. The substrate processing device according to claim 3, characterized in that The cover limiting shaft part includes: A shaft coupling part, which is shaft-coupled to the limiting gear part; An elastic member, which is sandwiched between the shaft coupling part and the limiting gear part; And A height adjusting part, which is arranged on the shaft coupling part and the limiting gear part to adjust the height of the shaft coupling part.

5. The substrate processing device according to claim 4, characterized in that A polygonal rotation prevention part is formed on the limiting gear part, A polygonal rotation prevention groove part is formed inside the shaft coupling part for inserting the polygonal rotation prevention part.

6. The substrate processing device according to claim 4, characterized in that The cover limiting shaft part further includes: A position fixing part, which is threadedly coupled to the outside of the shaft coupling part to limit the height adjusting part to the shaft coupling part.

7. The substrate processing device according to claim 2, characterized in that The movable clamping module further includes: A plurality of wafer limiting parts, which are respectively connected to the plurality of first clamping link parts to fix the retaining ring part of the wafer to the vacuum chuck part when the plurality of first clamping link parts move.

8. The substrate processing device according to claim 7, characterized in that The clamping base includes: A base body part, which is formed in a ring shape in a concentric manner with the rotation axis of the rotating chuck part; A plurality of guiding portions formed on the base body portion to movably couple the plurality of first clamping link portions to the plurality of guiding portions; and A base gear portion formed on the base body portion and connected to the clamping rotating portion.

9. The substrate processing apparatus according to claim 8, wherein The plurality of guiding portions are formed to be inclined with respect to the radius of the base body portion.

10. The substrate processing apparatus according to claim 8, wherein The plurality of first clamping link portions include: A first guiding slider movably coupled to the plurality of guiding portions; A first link member connected to the first guiding slider and linearly moving along the radial direction of the base body portion when the first guiding slider moves; and A first link gear portion formed on the first link member to mesh and move with the base gear portion.

11. The substrate processing apparatus according to claim 10, wherein The plurality of first clamping link portions further include a first guiding block, and the first link member is movably coupled to the first guiding block in a linear manner.

12. The substrate processing apparatus according to claim 7, wherein The plurality of wafer restricting portions include: A jig shaft portion rotatably provided on the rotating chuck portion; A jig gear portion formed on the jig shaft portion to mesh with the first clamping link portion; A jig link portion connected to the jig shaft portion; A jig support portion fixed to the rotating chuck portion; and A pressing jig portion rotatably provided on the jig support portion, and when the jig link portion moves, the pressing jig portion rotates to press and release the retainer ring portion of the wafer.

13. The substrate processing apparatus according to claim 12, wherein The pressing jig portion includes: A jig rotating portion hingedly coupled to the jig support portion and connected to the jig link portion; and Pressing finger portions formed on the jig rotating portion to press and release the retainer ring portion of the wafer.

14. The substrate processing apparatus according to claim 2, wherein When the clamping base rotates, the plurality of first clamping link portions and the plurality of second clamping link portions move simultaneously.

15. The substrate processing apparatus according to claim 1, wherein The height of the retainer ring portion of the wafer placed on the rotating chuck portion is the same as or lower than the upper surface height of the mold of the wafer placed on the vacuum chuck portion.

16. The substrate processing apparatus according to claim 15, wherein, Further includes: A plurality of adsorption pad portions provided on the vacuum chuck portion to adsorb the retainer ring portion of the wafer.

17. The substrate processing apparatus according to claim 16, wherein The plurality of adsorption pad portions include: An adsorption body portion disposed above the vacuum port to adsorb the wafer; A flatness management portion formed to be inclined from the lower peripheral portion of the adsorption body portion toward the central portion side for the vacuum port to be inserted; and The press-in fixing part is formed in the flatness management part so as to be press-fitted into the fixing groove part of the vacuum chuck part.

18. A substrate processing method, characterized in that, It includes: The step of mounting the wafer on the vacuum chuck part; The step of arranging the ring cover part on the peripheral part of the vacuum chuck part; The step of fixing the wafer to the vacuum chuck part and fixing the ring cover part to the rotating chuck part as the movable clamping module moves; And The step of rotating the rotating chuck part and the vacuum chuck part and jetting and supplying liquid to the wafer to etch the wafer, Wherein, the movable clamping module further includes a clamping base and a plurality of first clamping link parts. The clamping base is arranged on the rotating chuck part. The plurality of first clamping link parts are respectively connected to the clamping base in a radial manner and move when the clamping base rotates.

19. The substrate processing method according to claim 18, wherein: The step of fixing the wafer to the vacuum chuck part and fixing the ring cover part to the rotating chuck part as the movable clamping module moves includes: The step of rotating the clamping base by the clamping rotating part; The step of moving the plurality of first clamping link parts and a plurality of second clamping link parts as the clamping base rotates; and The step of fixing the retaining ring part of the wafer to the vacuum chuck part by a plurality of wafer limiting parts and fixing the ring cover part to the rotating chuck part by a plurality of cover limiting parts.

20. The substrate processing method according to claim 18, wherein: The ring cover part presses the bonding piece of the wafer to prevent the supply liquid from entering the side of the retaining ring part of the wafer.

21. The substrate processing method according to claim 19, wherein: In the step of moving the plurality of first clamping link parts and the plurality of second clamping link parts as the clamping base rotates, When the clamping base rotates, the plurality of first clamping link parts and the plurality of second clamping link parts move simultaneously.

22. The substrate processing method according to claim 19, wherein: The movable clamping module includes a plurality of cover limiting parts. The plurality of cover limiting parts are connected to the second clamping link parts to fix the ring cover part to the rotating chuck part when the second clamping link parts move.

23. The substrate processing method according to claim 22, wherein: The cover limiting part includes: A cover limiting shaft part rotatably arranged on the rotating chuck part; A limiting gear part connected to the second link gear part; A cover limiting strip connected to the cover limiting shaft part to press and release the ring cover part; and A limiting roller part rotatably arranged on the cover limiting strip to rollingly contact the ring cover part.

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