A bipolar electrostatic chuck for a pan-semiconductor manufacturing device and a manufacturing method thereof

Abstract

The present invention discloses a bipolar electrostatic chuck for a pan-semiconductor manufacturing device and a manufacturing method thereof, including an upper metal substrate plate, a lower metal substrate plate, a first insulating layer and a second insulating layer on the upper surface of the upper metal substrate plate; a first electrode layer and a second electrode layer are horizontally and alternately arranged evenly between the first insulating layer and the second insulating layer. Both the first electrode layer and the second electrode layer are composed of a plurality of electrode wires, and the width of the electrode wires is 0.5 to 1 mm, and the distance between the electrode wires is 0.2 to 1 mm. The first electrode layer and the second electrode layer are respectively connected to two power supply rods located in the upper metal substrate plate. When adsorbing a wafer, voltages with opposite polarities are respectively applied to the two power supply rods, so that static electricity with opposite polarities is formed on the surfaces of the first electrode layer and the second electrode layer. The present invention can generate sufficient adsorption force on the surface of the electrostatic chuck at a lower voltage, reduce the probability of discharge when the electrostatic chuck is used, accelerate the speed of static electricity dissipation when replacing the wafer or the glass substrate, and improve the equipment utilization rate.

Description

Technical Field

[0001] The present invention relates to the technical field of general semiconductor manufacturing equipment, and particularly relates to a bipolar electrostatic chuck for general semiconductor manufacturing equipment and a manufacturing method thereof. Background Art

[0002] An electrostatic chuck, also known as an electrostatic chuck, is used in processing equipment in the general semiconductor industry (chip, panel, optoelectronic industry), such as dry etching equipment, chemical vapor deposition equipment, and ion implantation equipment, etc., and is a core functional component of these devices. Its main function is to fix a wafer or a glass substrate during the processing of a chip or a panel.

[0003] Principle of an electrostatic chuck for adsorbing a wafer or a glass substrate: Two insulating layers are provided on the surface of the electrostatic chuck, and an electrode layer is sandwiched between the two insulating layers. When in use, a voltage is applied to the electrode layer, so that static electricity with opposite polarities is generated between the electrostatic chuck and the wafer or the glass substrate, thereby forming a Coulomb force to fix the wafer or the glass substrate.

[0004] Currently used electrostatic chucks are divided into single-pole type and bipolar type according to the structure of the electrode layer. Among them, because the bipolar chuck has a fast static electricity release speed and a short waiting time when replacing a wafer / glass substrate, it can improve the utilization rate of the equipment. Therefore, it is widely used in processes with a high frequency of wafer / glass substrate replacement. The structure of the bipolar electrostatic chuck is as Figure 1 shown. From bottom to top, it includes: a metal substrate, a first insulating layer, an electrode layer, and a second insulating layer. In addition, there are also auxiliary structures such as a power supply part, lift-pin holes, helium holes, and helium grooves. Among them, the electrode layer includes two sets of mutually staggered but insulated electrode lines (as Figure 2 and Figure 3 shown). When in use, these two sets of electrode lines of the electrode layer are respectively connected with positive and negative voltages, so as to form charges with opposite polarities on the wafer / glass substrate to generate an electrostatic adsorption force.

[0005] The adsorption force of the bipolar electrostatic chuck is determined by the total area of the electrode layer. The larger the total area is, the more electrostatic adsorption force can be generated at a relatively small voltage. Therefore, when manufacturing a bipolar electrostatic chuck, it is necessary to minimize the width between adjacent electrode lines to increase the total area of the electrode layer, so that a sufficient adsorption force can be provided at a relatively small voltage when using the chuck. When the voltage applied to the chuck is small, the probability of discharge can be effectively reduced, and the product defect rate can be reduced.

[0006] When replacing a wafer / glass substrate, the equivalent circuit of the bipolar chuck for releasing static electricity is as Figure 3 shown, where Figure 1 the dotted area in Figure 4 is equivalent to an RC circuit unit in . When releasing static electricity, the remaining voltage u of each RC circuit unit changes with time as shown in the following formula.

[0007]

[0008] Where U is the potential difference applied to the positive and negative electrodes of the electrostatic chuck electrode layer, and t is the time. The capacitance C is proportional to the area of each electrode line. The smaller the area, the smaller the capacitance C and the faster the electrostatic discharge. Therefore, in order to accelerate the electrostatic discharge speed of the bipolar electrostatic chuck, thereby reducing the waiting time when replacing the wafer / glass substrate and improving the equipment utilization rate, it is necessary to make the width of each electrode line in the electrode layer as small as possible.

[0009] According to the above analysis, ideally, for the electrode layer of the bipolar electrostatic chuck, the width of the electrode line and the spacing between the electrode lines should be made as small as possible at the same time. However, currently, the width and spacing of the electrode lines in the bipolar electrostatic chuck are usually above 1 mm. Due to the relatively large width of the electrode lines, the time required to wait for the electrostatic chuck to release static electricity when replacing the chip / wafer is relatively long. At the same time, due to the relatively large spacing between the electrode lines, the area of the electrode layer accounts for often less than 1 / 2 of the entire adsorption surface area of the electrostatic chuck. Therefore, a relatively large voltage is required to form sufficient adsorption force.

[0010] Currently, the line width and spacing are restricted by the existing process. The current process for making the electrode layer is usually to stick a masking fixture on the surface of the electrostatic chuck with double-sided tape. The masking fixture is laser-perforated according to the arrangement pattern of the electrode layer, and then a metal material is sprayed by plasma spraying at the perforated areas of the masking fixture to form the electrode layer. However, when using this method, it is very difficult to make the perforations and the spacing of the masking fixture less than 1 mm at the same time. And even if it is made less than 1 mm, it is very difficult to stick the double-sided tape on the masking fixture without covering the perforated part. Moreover, when the width of the double-sided tape is too thin, insufficient adhesion force can be provided during the spraying process, and the masking fixture is likely to deform due to heat and detach from the electrode surface.

[0011] Therefore, it is necessary to provide a bipolar electrostatic chuck for semiconductor manufacturing equipment and its manufacturing method to solve the above problems. Summary of the Invention

[0012] To overcome the above disadvantages, the purpose of the present invention is to provide a bipolar electrostatic chuck for semiconductor manufacturing equipment and its manufacturing method, which can generate sufficient adsorption force on the surface of the electrostatic chuck at a relatively low voltage, reduce the probability of discharge when the electrostatic chuck is in use, accelerate the speed of static electricity dissipation when replacing the wafer or glass substrate, and improve the equipment utilization rate.

[0013] To achieve the above object, the technical solution adopted by the present invention is: a bipolar electrostatic chuck for a pan-semiconductor manufacturing device, comprising an upper metal matrix plate, a lower metal matrix plate, a first insulating layer and a second insulating layer located on the upper surface of the upper metal matrix plate; the first insulating layer and the second insulating layer are horizontally staggered and evenly arranged with a first electrode layer and a second electrode layer in the middle. The first electrode layer and the second electrode layer are each composed of a plurality of electrode wires, and the width of the electrode wires is 0.5-1 mm, and the distance between the electrode wires is 0.2-1 mm. The first electrode layer and the second electrode layer are respectively connected to two power supply rods located in the upper metal matrix plate. When adsorbing a wafer or a glass substrate, voltages with opposite polarities are applied to the two power supply rods respectively, so that static electricity with opposite polarities is formed on the surfaces of the first electrode layer and the second electrode layer. A cooling gas through hole and a lifting pin through hole penetrating through the upper metal matrix plate are provided on the second insulating layer.

[0014] Preferably, both the upper metal matrix plate and the lower metal matrix plate are made of aluminum alloy or stainless steel, and the upper metal matrix plate and the lower metal matrix plate are combined by vacuum brazing. A cooling gas channel connected to the cooling gas through hole is horizontally opened between the upper metal matrix plate and the lower metal matrix plate.

[0015] Preferably, the first insulating layer and the second insulating layer are sequentially arranged along the height direction of the upper metal matrix plate. The first insulating layer and the second insulating layer are both made of ceramic material and have a thickness of 200-500 microns.

[0016] Preferably, the material of the electrode wire is high-purity tungsten or molybdenum, and the thickness of the first electrode layer and the second electrode layer is 30-100 microns.

[0017] Preferably, an insulating bushing one for preventing the metal matrix in the cooling gas through hole from being eroded by plasma, an insulating bushing two for preventing the metal matrix in the lifting pin through hole from being eroded by plasma, and an insulating bushing three for preventing the power supply rod from being electrically connected to the metal matrix are adhesively bonded inside the upper metal matrix plate by vacuum glue. The power supply rod is located in a power supply part through hole penetrating through the upper metal matrix plate and the lower metal matrix plate. The materials of the insulating bushing one, the insulating bushing two and the insulating bushing three are all sintered alumina.

[0018] A manufacturing method of a bipolar electrostatic chuck for a pan-semiconductor manufacturing device comprises the following steps:

[0019] S1: Use a lathe and a machining center to process the upper metal matrix plate and the lower metal matrix plate respectively, including a lifting pin through hole, a cooling gas through hole, a power supply part through hole and a cooling gas channel located on the upper metal matrix plate, and weld the processed upper metal matrix plate and the lower metal matrix plate by vacuum brazing;

[0020] S2: Clean the upper metal substrate plate and the lower metal substrate plate after welding. Install the first sintered alumina insulating bushing and the second insulating bushing at the cooling gas through-holes and the lifting pin through-holes. At the same time, install the electrode rods and the corresponding third insulating bushings in the two power supply part through-holes, bond them with vacuum glue, and place them in an oven for drying after installation to harden the glue.

[0021] S3: Sandblast the dried upper metal substrate plate and the lower metal substrate plate to make the surface roughness reach 2.0 - 3.0 microns. The sandblasting material is 80-mesh white fused alumina, and the sandblasting pressure is 0.4 - 0.6 kgf.

[0022] S4: Form the first insulating layer on the upper surface of the upper metal substrate plate by plasma spraying. The materials used are ceramic powders such as alumina, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, YAG, and aluminum nitride with a purity of 99.99% and a diameter of 10 - 100 microns, and the spraying thickness is 200 - 500 um.

[0023] S5: After spraying the first insulating layer, polish at the position of the power supply rod to expose the power supply rod, so as to ensure that the power supply rod is electrically connected to the electrode layer in the next step of spraying the electrode layer.

[0024] S6: Prepare the shielding fixtures for spraying the electrode layer. The design of the shielding fixtures is as follows:

[0025] 6-1. There are two sets of fixtures, which are respectively used for the first electrode layer and the second electrode layer.

[0026] 6-2. Each set of shielding fixtures is divided into several pieces. The hollow parts of the two sets of shielding fixtures are combined together, which is consistent with the distribution of the electrode wires in the first electrode layer or the second electrode layer. The width of the hollow parts in the two sets of shielding fixtures is the width of the electrode wires, and the gap between adjacent hollow parts is not less than 2 mm. When the shielding fixture is attached to the product surface with double-sided tape, it can ensure that the tape will not cover the hollow parts of the fixture, and at the same time ensure that the double-sided tape has a large enough area to provide sufficient adhesion force to fix the shielding fixture during the thermal spraying process to prevent it from detaching from the electrode surface due to heat deformation.

[0027] 6-3. The material of the shielding fixture is stainless steel.

[0028] S7: Attach the shielding fixtures to the first insulating layer one by one with heat-resistant double-sided tape, and form the first electrode layer and the second electrode layer at the hollow parts of the shielding fixtures by plasma spraying. The materials used for spraying the first electrode layer and the second electrode layer are 99.99% tungsten powder. After spraying, the thickness of the first electrode layer and the second electrode layer is 30 - 100 microns, and the resistance value between the power supply rod and the electrode layer is less than 10 Ω.

[0029] S8: According to the steps of S4, spray metal on the surface of the electrode layer to form the second insulating layer, with a spraying thickness of 300 - 600 um, leaving a margin of 100 microns for subsequent finishing;

[0030] S9: Finally, perform finishing, grinding and polishing on the electrostatic chuck to process the electrostatic chuck to the required dimensions, flatness and roughness.

[0031] Advantages of the present invention:

[0032] 1. By arranging the first electrode layer and the second electrode layer with evenly spaced intervals on the surface of the electrostatic chuck, and the intervals between adjacent electrode lines of the first electrode layer and the second electrode layer are small, the area occupied by the first electrode layer and the second electrode layer on the entire adsorption surface of the electrostatic chuck increases. Therefore, it is not necessary to apply a very high voltage to the power supply rod to generate sufficient and uniform adsorption force on the wafer or glass substrate;

[0033] 2. Since the widths of the electrode lines of the first electrode layer and the second electrode layer are small, after the voltage application to the first electrode layer and the second electrode layer stops, the static electricity is released quickly. Therefore, when replacing the wafer / glass substrate, the waiting time is short, and the utilization rate of the equipment can be improved. Description of the drawings

[0034] Figure 1 is a schematic structural diagram of a bipolar electrostatic chuck in the prior art;

[0035] Figure 2 is a schematic structural diagram of the electrode layer of a bipolar electrostatic chuck in the prior art;

[0036] Figure 3 is another schematic structural diagram of the electrode layer of a bipolar electrostatic chuck in the prior art;

[0037] Figure 4 is an equivalent circuit diagram of the discharge of a bipolar chuck in the prior art;

[0038] Figure 5 is a front view of the overall structure of a preferred embodiment of the present invention;

[0039] Figure 6 is a schematic diagram of the first set of electrode layer shielding fixtures of a preferred embodiment of the present invention;

[0040] Figure 7 is a schematic diagram of the second set of electrode layer shielding fixtures of a preferred embodiment of the present invention;

[0041] Figure 8 is a schematic diagram of the equivalent structure of the two sets of shielding fixtures of a preferred embodiment of the present invention;

[0042] In the figure: 1. Metal substrate lower plate; 2. Metal substrate upper plate; 3. Insulation layer one; 4. Insulation layer two; 5. Electrode layer one; 6. Electrode layer two; 7. Lifting pin through hole; 8. Cooling gas through hole; 9. Insulation bushing one; 10. Cooling gas channel; 11. Insulation bushing two; 12. Insulation bushing three; 13. Feed rod; 14. Feed part through hole. DETAILED DESCRIPTION

[0043] The preferred embodiments of the present invention are described in detail below in conjunction with the accompanying drawings so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making a clearer and more definite definition of the protection scope of the present invention.

[0044] See attached Figures 5 to 8 As shown, a bipolar electrostatic chuck for a pan-semiconductor manufacturing device in this embodiment includes a metal substrate upper plate 2, a metal substrate lower plate 1, an insulating layer 3 and an insulating layer 4 located on the upper surface of the metal substrate upper plate 2; an electrode layer 5 and an electrode layer 6 are horizontally and evenly arranged between the insulating layer 3 and the insulating layer 4, as shown in the attached Figure 5 The electrode layer 1 5 and the electrode layer 2 6 are staggered to form a glass substrate and are not conductive to each other. When using the electrostatic chuck, two point rods are connected to voltages of opposite polarity, thereby forming static electricity of opposite polarity on the electrode layer 1 5 and the electrode layer 2 6. The electrode layer 1 5 and the electrode layer 2 6 are both composed of a plurality of electrode wires, the electrode wire width is 0.5 to 1 mm, and the spacing between the electrode wires is 0.2 to 1 mm. The spacing between the adjacent electrode wires of the electrode layer 1 and the electrode layer 2 is small, and the area occupied by the electrode layer 1 and the electrode layer 2 on the entire electrostatic chuck adsorption surface is increased, so there is no need to connect the voltage supply rod to the electrode layer 1. A sufficient and uniform adsorption force can be generated on the wafer or glass substrate by applying a very high voltage; the electrode layer 1 5 and the electrode layer 2 6 are respectively connected to two power supply rods 13 located in the metal base upper plate 2. When the wafer is adsorbed, voltages of opposite polarities are applied to the two power supply rods 13 to form static electricity of opposite polarities on the surfaces of the electrode layer 1 5 and the electrode layer 2 6. The insulating layer 2 4 is provided with a cooling gas through hole 8 and a lifting pin through hole 7 that penetrates the metal base upper plate 2. When the wafer or glass substrate needs to be replaced, the lifting pin extends from the lifting pin through hole 7 to lift the wafer or glass substrate for easy replacement.

[0045] The metal substrate upper plate 2 and the metal substrate lower plate 1 are both made of aluminum alloy or stainless steel, and the metal substrate upper plate 2 and the metal substrate lower plate 1 are combined by vacuum brazing. A cooling gas channel 10 connected to the cooling gas through hole 8 is horizontally opened between the metal substrate upper plate 2 and the metal substrate lower plate 1. The setting of the cooling gas channel 10 allows cooling gas to pass before plasma is formed, thereby preventing the problem of excessive temperature of the wafer / glass substrate at the moment of plasma formation.

[0046] Among them, the upper metal substrate plate 2 and the lower metal substrate plate 1 are made of aluminum of model A6061, refer to the appendix Figure 5 , the width of each of the electrode lines is specifically 0.6 mm, the interval between the electrode lines is 0.2 mm, and the distribution of the electrode lines is as Figure 3 shown. The first electrode layer 5 is connected to the power supply rod 13 on the left side of the upper metal substrate plate 2, and the second electrode layer 6 is connected to the power supply rod 13 on the right side of the upper metal substrate plate 2.

[0047] The first insulating layer 3 and the second insulating layer 4 are arranged in sequence along the height direction of the upper metal substrate plate 2. Both the first insulating layer 3 and the second insulating layer 4 are made of ceramic material, and the thickness is 200 - 500 microns.

[0048] Among them, the materials of the first insulating layer and the second insulating layer are specifically yttrium oxide, and the thickness is 400 microns.

[0049] The material of the electrode line is high-purity tungsten or molybdenum, and the thickness of the first electrode layer and the second electrode layer is 30 - 100 microns.

[0050] Among them, the thicknesses of the first electrode layer and the second electrode layer are selected as 50 microns.

[0051] Refer to the appendix Figure 5 , the first electrode layer 5 and the second electrode layer 6 are distributed on the adsorption surface of the entire electrostatic chuck, ensuring that the adsorption force received by the wafer or the glass substrate during use is evenly distributed.

[0052] Inside the upper metal substrate plate 2, an insulating bushing one 9 for preventing the metal substrate in the cooling gas through hole 8 from being eroded by plasma, an insulating bushing two 11 for preventing the metal substrate in the lifting pin through hole 7 from being eroded by plasma, and an insulating bushing three 12 for preventing the power supply rod 13 from being conducted with the metal substrate are bonded by vacuum glue. The power supply rod 13 is located in the power supply part through hole 14 penetrating the upper metal substrate plate 2 and the lower metal substrate plate 1. The materials of the insulating bushing one 9, the insulating bushing two 11, and the insulating bushing three 12 are all sintered alumina.

[0053] Working principle: When using the above-mentioned electrostatic chuck, voltages with opposite polarities are applied to the two feeding rods 13, and static electricity with opposite polarities is formed on the first electrode layer and the second electrode layer. As a result, the static electricity in the first electrode layer and the second electrode layer further forms static electricity on the wafer / glass substrate, generating an adsorption force to fix it. Since the spacing of the electrode wires is small and the first electrode layer and the second electrode layer occupy a relatively large area of the entire adsorption surface of the electrostatic chuck, a small voltage can generate sufficient and uniform adsorption force on the wafer or glass substrate. Also, because the width of the electrode wires in the first electrode layer and the second electrode layer is small, when the voltage applied to the electrode layer is stopped, the static electricity is released faster. Therefore, when replacing the wafer / glass substrate, the waiting time is shorter, which can improve the utilization rate of the equipment.

[0054] A manufacturing method of a bipolar electrostatic chuck for a semiconductor manufacturing equipment, comprising the following steps:

[0055] S1: Use a machining center to process the upper metal substrate plate and the lower metal substrate plate respectively, including the lifting pin through holes, cooling gas through holes, power feeding part through holes and cooling gas channels located on the upper metal substrate plate, and weld the processed upper metal substrate plate and the lower metal substrate plate by vacuum brazing;

[0056] S2: Clean the welded upper metal substrate plate and the lower metal substrate plate, install the first sintered alumina insulating bushing and the second insulating bushing at the cooling gas through holes and the lifting pin through holes, and at the same time install electrode rods and corresponding third insulating bushings in the two power feeding part through holes, bond them with vacuum glue, and place them in an oven for drying after installation to harden the glue;

[0057] S3: Sandblast the dried upper metal substrate plate and the lower metal substrate plate to make their surface roughness reach 2.0 - 3.0 microns, where the sandblasting material is 80 - mesh white fused alumina and the sandblasting pressure is 0.4 - 0.6 kgf;

[0058] Among them, the selected sandblasting pressure is 0.4 kgf;

[0059] S4: Form the first insulating layer on the upper surface of the upper metal substrate plate by plasma spraying, and the materials used are ceramic powders such as alumina, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, YAG, aluminum nitride, etc. with a purity of 99.99% and a diameter of 10 - 100 microns, and the spraying thickness is 200 - 500 um;

[0060] Among them, the material of the first insulating layer is yttrium oxide, and the thickness of the first insulating layer is 400 microns;

[0061] S5: After spraying the first insulating layer, polish at the position of the power feeding rod to expose the power feeding rod, so as to ensure that the power feeding rod is conducted with the electrode layer in the next step of spraying the electrode layer;

[0062] S6: Prepare the shielding fixtures for spraying the electrode layer. The design of the shielding fixtures is as follows (refer to Figures 6 - 8 , where Figure 8 the shielding fixture in Figure 6 is equivalent to the effect after using the shielding fixtures in Figure 7 one by one):

[0063] 6-1. There are two sets of fixtures, which are respectively used on the first electrode layer and the second electrode layer;

[0064] 6-2. Each set of shielding fixtures is divided into several pieces. The hollowed-out parts of the two sets of shielding fixtures are combined together and are consistent with the distribution of the electrode wires in the first electrode layer or the second electrode layer. The width of the hollowed-out parts in the two sets of shielding fixtures is the width of the electrode wires, and the gap between adjacent hollowed-out parts is not less than 2 mm. When the shielding fixture is attached to the product surface with double-sided tape, it can ensure that the tape does not cover the hollowed-out parts of the fixture, and at the same time ensure that the double-sided tape has a large enough area to provide sufficient adhesion force to fix the shielding fixture during the thermal spraying process and prevent it from detaching from the electrode surface due to heat deformation;

[0065] Among them, the specific width of the electrode wires at the hollowed-out parts is 0.6 mm, and the preferred gap between adjacent hollowed-out parts is 2.6 mm. When attaching the shielding fixture, the double-sided tape is pasted between the hollowed-out parts. Since the interval between the hollowed-out parts is 2.6 mm, there is enough space for pasting the double-sided tape, which can ensure that the double-sided tape does not block the hollowed-out parts when pasting, and at the same time the area of the double-sided tape is large enough to provide sufficient adhesion force to prevent the shielding fixture from detaching from the electrode surface due to heat deformation during the thermal spraying process;

[0066] 6-3. The material of the shielding fixture is stainless steel, specifically 304 stainless steel;

[0067] S7: Attach the shielding fixtures to the first insulating layer one by one with heat-resistant double-sided tape, and use the plasma spraying method to form the first electrode layer and the second electrode layer at the hollowed-out parts of the shielding fixtures. The material used for spraying the first electrode layer and the second electrode layer is 99.99% tungsten powder. After spraying, the thickness of the first electrode layer and the second electrode layer is 30-100 microns, and the resistance value between the feeding rod and the electrode layer is less than 10 Ω;

[0068] Among them, the specific thickness of the first electrode layer and the second electrode layer after spraying is 50 microns;

[0069] S8: According to the steps of S4, spray metal on the surface of the electrode layer to form the second insulating layer, and the spraying thickness is 300-600 um, leaving a margin of 100 microns for subsequent finishing;

[0070] Among them, the specific thickness of the second insulating layer is 500 microns;

[0071] S9: Finally, finish machining, grinding, and polishing the electrostatic chuck to machine it to the required dimensions, flatness, and roughness.

[0072] For the electrostatic chuck obtained by the above process, the total area of electrode layer 1 and electrode layer 2 accounts for 75% of the adsorption surface area, showing a significant increase compared to the 50% total electrode layer area in currently common electrostatic chucks. Moreover, the line width of the electrode wire is only 0.6 mm, and compared to a line width of 1 mm, the discharge time can be shortened by 40%.

[0073] The above embodiments are only for illustrating the technical concept and features of the present invention, aiming to enable those familiar with this technology to understand the content of the present invention and implement it. However, it should not be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.

Claims

1. A bipolar electrostatic chuck for a general semiconductor manufacturing equipment, characterized in that: It includes an upper metal matrix plate, a lower metal matrix plate, a first insulating layer and a second insulating layer located on the upper surface of the upper metal matrix plate; the first insulating layer and the second insulating layer are horizontally staggered and evenly arranged with a first electrode layer and a second electrode layer in the middle. The first electrode layer and the second electrode layer are both composed of a number of electrode wires, and the width of the electrode wires is 0.5 to 1 mm, the spacing between the electrode wires is 0.2 to 1 mm. The first electrode layer and the second electrode layer are respectively connected to two power supply rods located inside the upper metal matrix plate. When adsorbing a wafer or a glass substrate, voltages with opposite polarities are respectively applied to the two power supply rods to form static electricity with opposite polarities on the surfaces of the first electrode layer and the second electrode layer. A cooling gas through-hole and a lifting pin through-hole penetrating through to the upper metal matrix plate are provided on the second insulating layer; An insulating bushing one for preventing the metal matrix in the cooling gas through-hole from being eroded by plasma, an insulating bushing two for preventing the metal matrix in the lifting pin through-hole from being eroded by plasma, and an insulating bushing three for preventing the power supply rod from being electrically connected to the metal matrix are adhesively bonded inside the upper metal matrix plate through vacuum glue. The power supply rod is located in a power supply part through-hole penetrating through the upper metal matrix plate and the lower metal matrix plate. The materials of the insulating bushing one, the insulating bushing two and the insulating bushing three are all sintered alumina.

2. The bipolar electrostatic chuck for a pan-semiconductor manufacturing device according to claim 1, characterized in that: Both the upper metal matrix plate and the lower metal matrix plate are made of aluminum alloy or stainless steel, and the upper metal matrix plate and the lower metal matrix plate are combined by vacuum brazing. A cooling gas channel connected to the cooling gas through-hole is horizontally opened in the middle of the upper metal matrix plate and the lower metal matrix plate.

3. The bipolar electrostatic chuck for a pan-semiconductor manufacturing device according to claim 1, characterized in that: The first insulating layer and the second insulating layer are sequentially arranged along the height direction of the upper metal matrix plate. Both the first insulating layer and the second insulating layer are made of ceramic material and have a thickness of 200 to 500 microns.

4. The bipolar electrostatic chuck for a pan-semiconductor manufacturing device according to claim 1, wherein: The material of the electrode wire is high-purity tungsten or molybdenum, and the thickness of the first electrode layer and the second electrode layer is 30 to 100 microns.

5. A manufacturing method of a bipolar electrostatic chuck for a pan-semiconductor manufacturing device, including the bipolar electrostatic chuck for a pan-semiconductor manufacturing device according to any one of claims 1-4, characterized in that: It includes the following steps: S1: The upper metal matrix plate and the lower metal matrix plate are respectively processed by a lathe and a machining center, including the lifting pin through-hole, the cooling gas through-hole, the power supply part through-hole and the cooling gas channel located on the upper metal matrix plate, and the processed upper metal matrix plate and the lower metal matrix plate are welded by vacuum brazing; S2: The welded upper metal matrix plate and the lower metal matrix plate are cleaned. The sintered alumina insulating bushing one and the insulating bushing two are installed at the cooling gas through-hole and the lifting pin through-hole. At the same time, an electrode rod and the corresponding insulating bushing three are installed in the two power supply part through-holes, and vacuum glue is used for adhesion. After the installation is completed, it is placed in an oven for drying to harden the glue; S3: The dried upper metal matrix plate and the lower metal matrix plate are sandblasted to make the surface roughness reach 2.0 to 3.0 microns. The material for sandblasting is 80-mesh white corundum, and the sandblasting pressure is 0.4 to 0.6 kgf; S4: Form an insulating layer 1 on the upper surface of the upper plate of the metal substrate by plasma spraying. The materials used are alumina, yttrium oxide, yttrium fluoride, yttrium oxyfluoride, YAG, and aluminum nitride ceramic powders with a purity of 99.99% and a diameter of 10 - 100 microns. The spraying thickness is 200 - 500 um; S5: After the spraying of the insulating layer 1 is completed, polish the position of the power supply rod to expose the power supply rod, so as to ensure that the power supply rod is electrically connected to the electrode layer during the next spraying of the electrode layer; S6: Prepare a shielding jig for spraying the electrode layer. The design of the shielding jig is as follows: 6 - 1. There are two sets of jigs, which are respectively used for the electrode layer 1 and the electrode layer 2; 6 - 2. Each set of shielding jigs is divided into several pieces. The hollow parts of the two sets of shielding jigs are combined together and are consistent with the distribution of the electrode wires in the electrode layer 1 or 2. The width of the hollow parts of the two sets of shielding jigs is the width of the electrode wires, and the gap between adjacent hollow parts is not less than 2 mm. When the shielding jig is attached to the product surface with double - sided tape, it can ensure that the tape will not cover the hollow parts of the jig, and at the same time ensure that the double - sided tape has a large enough area to provide sufficient adhesive force to fix the shielding jig during the thermal spraying process to prevent it from deforming due to heat and detaching from the electrode surface; 6 - 3. The material of the shielding jig is stainless steel; S7: Attach several pieces of the shielding jig to the insulating layer 1 one by one with heat - resistant double - sided tape, and use plasma spraying to form the electrode layer 1 and the electrode layer 2 in the hollow parts of the shielding jig. The materials used for spraying the electrode layer 1 and the electrode layer 2 are 99.99% tungsten powder. After spraying, the thickness of the electrode layer 1 and the electrode layer 2 is 30 - 100 microns, and the resistance value between the power supply rod and the electrode layer is less than 10 Ω; S8: According to the steps of S4, spray metal on the surface of the electrode layer to form an insulating layer 2 with a spraying thickness of 300 - 600 um, leaving a margin of 100 microns for subsequent finishing; S9: Finally, perform finishing, grinding, and polishing on the electrostatic chuck to process the electrostatic chuck to the required dimensions, flatness, and roughness.

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