Power electronic switching device and method of manufacturing the same

Abstract

A power electronic switching device and a method of manufacturing the same are disclosed, the power electronic switching device having a substrate facing a first conductive track and a second conductive track in a normal direction, wherein a power semiconductor component is arranged on the first conductive track by a conductive connection, wherein the power semiconductor component has a lateral surrounding edge and on its first main side facing away from the substrate has an edge region and a contact region, and the power electronic switching device has a three-dimensionally pre-shaped insulating molding comprising an overlapping section, a connecting section and an extending section, wherein the overlapping section partially overlaps the edge region of the power semiconductor component starting from the edge as viewed from the normal direction.

Description

Technical Field

[0001] This invention describes a power electronic switching device having a substrate with a first conductive track and a second conductive track, wherein power semiconductor components are disposed on the first conductive track via conductive connections. The power semiconductor components include edge regions with side surrounds and insulating devices abutting against them. The invention also describes a method for manufacturing such a power electronic switching device. Background Technology

[0002] DE102015116 65A1 discloses a method for manufacturing a power electronic switching device. A power semiconductor component is disposed on a first region of a conductive track on a substrate. An insulating film with a notch is then prepared, wherein the overlapping region of the insulating film adjacent to the notch is designed to cover the edge region of the power semiconductor component. The insulating film is arranged on the substrate on which the power semiconductor component is disposed such that the edge region of the power semiconductor component is covered on each side by the overlapping region of the insulating film, wherein additional segments of the insulating film cover multiple portions of one of the conductive tracks. Finally, a connection device is disposed. Summary of the Invention

[0003] In view of the prior art, the present invention aims to provide a power electronic switching device and a method for manufacturing the same, having an alternative insulation device that can be more easily arranged and whose materials are technically advantageous.

[0004] According to the invention, this objective is achieved by a power electronic switching device having a substrate facing a first conductive track and a second conductive track in a normal direction, wherein a power semiconductor component is disposed on the first conductive track by a conductive connection, wherein the power semiconductor component has a side surrounding edge and an edge region and a contact region on a first main side away from the substrate, and the power electronic switching device has a three-dimensional preformed insulating molded part including an overlapping section, a connecting section and an extending section, wherein, viewed from the normal direction, the overlapping section partially overlaps the edge region of the power semiconductor component from the edge in two directions both perpendicular to the normal direction, thereby the contact region partially or completely does not overlap with the insulating molded part and thus remains exposed and accessible.

[0005] It may be particularly advantageous if, when viewed from the normal direction, the overlapping section completely overlaps with the edge region and partially (preferably completely surrounds) the contact region, and overlaps to the minimum possible extent.

[0006] It is preferable if the insulating molded part has a contoured profile on its second main side facing the substrate, and preferably also on its first main side facing away from the substrate. Furthermore, it is even more preferable if the thickness of the insulating molded part is non-uniform, and is more than 20%, preferably more than 30%, and particularly preferably more than 50% smaller in the first planar section than in the second planar section. The planar section herein refers to a section having two sections with corresponding main sides parallel to each other. The first planar section is preferably located in the region of the connecting section, and the second planar section is located in the region of the extending section.

[0007] It may be particularly advantageous to arrange the first adhesive material between the overlapping section and the first main side of the power semiconductor component. Furthermore, it may be advantageous if the first adhesive material is also disposed between the edge of the power semiconductor component and the relevant area of ​​the connecting section.

[0008] Furthermore, it may be preferable if the connecting section rests directly on the first conductive track, or if a second adhesive material is provided between the relevant area of ​​the connecting section and the first conductive track. It is particularly preferred if the first and second adhesive materials are formed of the same material.

[0009] Advantageous embodiments are shown if the dielectric constant of the insulating molding is 25% greater than that of the first adhesive material, preferably 50% greater, and particularly preferably 100% greater.

[0010] Further advantageous embodiments are observed if the insulating molding has a coefficient of thermal expansion that is 25%, preferably 50%, and particularly preferably 100% smaller than that of the first adhesive material.

[0011] If the insulating molded part has a dielectric strength greater than 1000kV / m, especially greater than 2000kV / m and greater than 10 9 Ω / m, especially greater than 10 10 A resistivity of Ω / m also shows an advantageous embodiment.

[0012] Advantageous embodiments ultimately emerge when the insulating molding is formed from a material from the group consisting of liquid crystal polymers, thermoplastics, or thermosetting plastics. The insulating molding may, in particular, be formed from polyamides, polyamide-imides, polyethylene terephthalate, polyphenylene sulfide, or polyetheretherketone.

[0013] This objective is further achieved by a method for manufacturing the power electronic switching device according to the present invention, the method comprising the following steps:

[0014] a) Provide a power semiconductor component for the substrate, the power semiconductor component being disposed on and electrically connected to the first conductive track;

[0015] b) Arrange the three-dimensional preformed insulating molded parts.

[0016] It may be advantageous to perform the following method step before method step b): disposing a first adhesive material on the edge region of the power semiconductor component or on a planar segment of the insulating mold facing the edge region of the power semiconductor component.

[0017] It may also be preferred to perform the following method step after method step b): subject the power electronic switching device to a temperature between 50°C and 200°C, preferably between 80°C and 120°C.

[0018] Further preferred is to perform the following method step after method step b): arranging a connection device for conductive connection between the contact surface of the contact segment of the power semiconductor component and the second conductive track, wherein the connection device is designed as a wire bond connection or as a film stack, wherein this is formed by an alternating arrangement of at least one conductive film and at least one electrically insulating film.

[0019] Of course, if this is neither excluded nor explicitly stated, the features mentioned in the singular, particularly the corresponding conductive tracks and power semiconductor components, and, if relevant, the insulating molding, may also exist in the plural in the power electronic switching device according to the invention. However, it may also be preferred if exactly one three-dimensional preformed insulating molding is present in the power electronic switching device according to the invention.

[0020] It should be clear that various embodiments of the present invention can be implemented individually or in any desired combination to achieve improvements. In particular, without departing from the scope of the invention, all features mentioned and explained above and below, whether or not they are described in the context of a power electronic switching device or method, can be used not only in a given combination, but also in other combinations or individually. Preferably, only one or at most two three-dimensional preformed insulating molded parts are arranged, and at least two, preferably more than two, power semiconductor components are assigned to each insulating molded part.

[0021] Further explanation, advantageous details and features of the invention are shown in Figures 1 to 12. Figure 7 Exemplary embodiments of the invention, or corresponding portions thereof, illustrated schematically in the following description, are shown. The power electronic switching device according to the invention should always be understood to also refer to a power electronic switching device manufactured according to the invention. Attached Figure Description

[0022] Figure 1 shows a side view of a power electronic switching device according to the prior art.

[0023] Figure 2 and Figure 3 A side view of a first embodiment of a power electronic switching device according to the present invention is shown.

[0024] Figure 4 A side view of a second embodiment of the power electronic switching device according to the present invention is shown.

[0025] Figure 5 A side view of a third embodiment of the power electronic switching device according to the present invention is shown.

[0026] Figure 6 A side view of a fourth embodiment of the power electronic switching device according to the present invention is shown.

[0027] For the purpose of further explanation, Figure 7 A plan view of the power semiconductor components of a power electronic switching device is shown. Detailed Implementation

[0028] Figure 1 shows a side view of a power electronic switching device 1 according to the prior art. The switching device 1 includes a substrate 2 having a body 20 of insulating material and a first conductive track 22 and a second conductive track 24 disposed thereon. A power semiconductor component 5 is disposed on the first conductive track 22 of the substrate 2 and is electrically connected thereto via its contact surface facing the first conductive track 22. This conductive connection 900 is formed here as a pressure-sintered material bond, without limitation to generality.

[0029] The power semiconductor component 5, or more precisely, the contact surface of the power semiconductor component 5 facing away from the substrate 2 in its normal direction N, is electrically connected to the second conductive track 24 of the substrate 2 via a connecting device 3. This connecting device 3 is designed as a film laminator, which consists of a first conductive film 30 facing the substrate 2, an electrically insulating film 32 subsequently present in the film laminator, and a second conductive film 34, again subsequently present in the film laminator. Advantageously, at least one conductive film 30, 34 is itself structured and forms the conductive film track.

[0030] The power electronic switching device 1 also includes a connecting element 6, of which only auxiliary connecting elements are shown here to carry auxiliary potentials, such as sensor or control signals. This connecting element 6 is designed as a conventional pressure contact element 64, which is arranged on the connecting device via a sleeve 62. The sleeve includes a material bond 900 that engages with a contact section on the surface of the first conductive film 30 facing away from the substrate 2.

[0031] The first conductive film 30 is connected to the second conductive track 24 of the substrate 2 via a material-bonded conductive connection 900, which is formed as a conventional pressure sintering connection. A portion of the housing 7 is also shown; the housing 7 is part of a power electronic switching device or a power semiconductor module formed therewith. This housing includes a feedthrough 70 for connecting element 6. Such internal connecting devices, connecting elements, and housings or portions thereof (including those of different designs) can also be arranged against the power electronic switching device according to the invention and then specifically form a power semiconductor submodule therewith.

[0032] Figure 2 and Figure 3 A side view of a first embodiment of a power electronic switching device according to the present invention is shown. The substrate 2 and the power semiconductor component 5, as well as the device according to... Figure 3 The basic design of the connecting device 3 corresponds to the prior art as described in Figure 1. The connecting device 3, designed as a film laminate, includes a first conductive film 30 and a second conductive film 34, each having a thickness of 200 μm, and an electrically insulating film 32 having a thickness of 80 μm.

[0033] Power semiconductor component 5 includes (see also) Figure 7 The side surrounds the edge 50 and the edge region 52 and contact region 54 on its first main side 500 facing away from the substrate 2, the contact region 54 being adjacent to the edge region 52 and a or similar Figure 7 The multiple contact surfaces shown.

[0034] A portion of a three-dimensional preformed insulating molded part 4 is also shown, which is designed to be rigid compared to the film. The insulating molded part 4 includes an overlapping section 42, a connecting section 44, and an extending section 46 (not shown), wherein the connecting section 44 is completely disposed between the overlapping section 42 and the extending section 46. Viewed from the normal direction N, the overlapping section 42 begins at the edge 50 of the power semiconductor component 5, partially overlapping with the edge region 52 of the power semiconductor component 5, and extends thereto near the contact region 54.

[0035] A first adhesive material 80 is disposed between the overlapping section 42 and the first main side 500 of the power semiconductor component 5, or more precisely, between the overlapping section 42 and the overlapping section of the edge region 52 of the power semiconductor component 5. The first adhesive material 80 is also disposed between the edge of the power semiconductor component 5 and the opposing (i.e., associated) region of the connection section 44 of the insulating molded part 4, such that there is no direct contact between the three-dimensional preformed insulating molded part 4 and the power semiconductor component 5. The first adhesive material 80 even extends beyond the edge of the insulating molded part 4 in the direction of the contact region 54 of the power semiconductor component 5 and slightly contacts that region.

[0036] Furthermore, in this embodiment, the connecting section 44 is directly placed on the first conductive track 22 and the second conductive track 24, thereby bridging the groove 26 disposed between the conductive tracks 22 and 24.

[0037] In this exemplary embodiment, purely by way of example, the insulating molding part 4 is composed of polyphenylene sulfide and has a dielectric constant that is at least 50% greater than that of the first adhesive material 80, which is silicone rubber. Furthermore, the insulating molding part 4 has a coefficient of thermal expansion that is at least 50% smaller than that of the first adhesive material 80. Additionally, the insulating molding part 4 has a dielectric strength greater than 1500 kV / m and a dielectric strength greater than 10... 10 Resistivity in Ω / m.

[0038] Figure 4 A side view of a second embodiment of the power electronic switching device according to the present invention is shown. The substrate 2, the power semiconductor component 5, and the first adhesive material 80 are each bonded to the substrate according to the present invention. Figure 2 and Figure 3 Those are the same.

[0039] This illustration shows a portion of the extension section 46, the overlapping section 42, and the connecting section 44 of the three-dimensional preformed insulating molding 4. In this second embodiment, similar to the insulating molding of the first embodiment, the insulating molding 4 has a wavy profile on its second main side 402 facing the substrate 2. In the transition region from the connecting section 44 to the extension section 46, the three-dimensional preformed insulating molding 4 also has a wavy profile on its first main side 400 facing away from the substrate 2.

[0040] In this second embodiment, the connection section 44 and the extension section 46 extending to another connection section (also not shown) to another power semiconductor component (not shown) are also directly placed on the first conductive track 22 and the second conductive track 24.

[0041] Figure 5 A side view of a third embodiment of the power electronic switching device according to the invention is shown. Compared to the second embodiment, the connecting section 44 and the extending section 46 are not directly located on either of the conductive tracks 22, 24. Instead, in this case, a second adhesive material 82 is disposed on the entire surface between the three-dimensional preformed insulating molded part 4 and the substrate 2 (including its conductive tracks 22, 24). The first adhesive material 80 and the second adhesive material 82 are advantageously formed of the same material, i.e., identical, and are also disposed simultaneously during the manufacturing process.

[0042] Figure 6A side view of a fourth embodiment of the power electronic switching device according to the invention is shown. The three-dimensional preformed insulating molding 4 here also includes an overlapping section 42, a connecting section 44, and an extending section 46. Viewed from the normal direction N, the overlapping section 42 completely overlaps the edge region 52 of the power semiconductor component from the edge 50, and thus also completely surrounds and partially overlaps the contact region 54 of the power semiconductor component 5, although only to a very small extent.

[0043] The edge of the overlapping section 42 includes a fully encircling channel-shaped recess 420 facing the power semiconductor component 5 for a secure mechanical connection.

[0044] The insulating molding 4 has a wavy profile on its second main side 402 facing the substrate 2. It also has a wavy profile on its first main side 400 facing away from the substrate 2. Therefore, the thickness of the insulating molding 4 is non-uniform and is more than 30% smaller in the first planar section 404 than in the second planar section 406.

[0045] For the purpose of further explanation, Figure 7 A plan view of a power semiconductor component 5 of a power electronic switching device is shown. The power semiconductor component 5 has an edge 50 located between its main surfaces at its side. On the upper side, this is a first main side 500, referenced... Figures 2 to 6 The edge region 52 of the first main side 500 extends from the edge 50, and a ring-shaped edge structure commonly used in the art is arranged therein. A contact region 54 is arranged adjacent to the edge region 52, forming an internal region of the power semiconductor component 5, and surrounding all electrical contact surfaces 540, 542 and the space between them. Two electrical contact surfaces, a control connection contact surface 542 and a load connection contact surface 540, are shown here purely by way of example; the load connection contact surface 540 is implemented here as the emitter connection contact surface of a power transistor.

Claims

1. A power electronic switching device, the power electronic switching device (1) having a substrate (2) facing in a normal direction (N) a first conductive track (22) and a second conductive track (24), characterized in that, The power semiconductor component (5) is arranged on the first electrically conductive track (22) by means of an electrically conductive connection (900), wherein the power semiconductor component (5) has a lateral surrounding edge (50) and, on its first main side (500) facing away from the base plate (2), has an edge region (52) and a contact region (54), and the power electronics switchgear (1) has a three-dimensionally pre-shaped insulating molding (4) which is rigid and comprises an overlapping section (42), a connecting section (44) and an extending section (46), wherein the overlapping section (42) partially overlaps the edge region (52) of the power semiconductor component (5) starting from the edge (50) as viewed in the normal direction (N), the insulating molding (4) also has a wavelike profile on its first main side (400) facing away from the base plate (2), the thickness of the insulating molding (4) is not uniform, and the thickness of the insulating molding (4) in the first planar section (404) is more than 20% less than the thickness in the second planar section (406), and a first adhesive substance (80) is provided between the overlapping section (42) and the first main side (500) of the power semiconductor component (5).

2. The power electronics switchgear according to claim 1, characterized in that the overlapping section (42) completely covers the edge region (52) and partially covers the contact region (54) starting from the edge (50) as viewed in the normal direction (N).

3. The power electronics switchgear according to claim 1, characterized in that the insulating molding (4) has a wavelike profile on its second main side (402) facing towards the base plate (2).

4. The power electronic switching device of claim 1, wherein, the thickness of the insulating molding (4) in the first planar section (404) is more than 30% less than the thickness in the second planar section (406).

5. The power electronic switching device of claim 1, wherein, the thickness of the insulating molding (4) in the first planar section (404) is more than 50% less than the thickness in the second planar section (406).

6. The power electronics switchgear according to claim 1, characterized in that the first adhesive substance (80) is also provided between the edge (50) of the power semiconductor component (5) and the associated region of the connecting section (44).

7. The power electronics switchgear according to any one of claims 1 to 6, characterized in that the connecting section (44) rests directly on the first electrically conductive track (22), or a second adhesive substance (82) is provided between the associated region of the connecting section (44) and the first electrically conductive track (22).

8. The power electronics switchgear according to any one of claims 1 to 6, characterized in that the first adhesive substance (80) and the second adhesive substance (82) are formed from the same material.

9. The power electronics switchgear according to any one of claims 1 to 6, characterized in that the insulating molding (4) has a dielectric constant which is 25% greater than that of the first adhesive substance (80).

10. The power electronics switchgear according to any one of claims 1 to 6, characterized in that The insulating molding (4) has a dielectric constant which is greater than that of the first adhesive substance (80) by 50%.

11. The power electronic switching device according to any of claims 1 to 6, characterized in that The insulating molding (4) has a dielectric constant which is greater than that of the first adhesive substance (80) by 100%.

12. The power electronic switching device according to any of claims 1 to 6, characterized in that The insulating molding (4) has a coefficient of thermal expansion which is less than that of the first adhesive substance (80) by 25%.

13. The power electronic switching device according to any of claims 1 to 6, characterized in that The insulating molding (4) has a coefficient of thermal expansion which is less than that of the first adhesive substance (80) by 50%.

14. The power electronic switching device according to any of claims 1 to 6, characterized in that The insulating molding (4) has a coefficient of thermal expansion which is less than that of the first adhesive substance (80) by 100%.

15. The power electronic switching device according to any of claims 1 to 6, characterized in that The insulating molding (4) has a dielectric strength of more than 1000 kV / m and an electrical resistivity of more than 109Ω / m.

16. The power electronic switching device according to any of claims 1 to 6, characterized in that The insulating molding (4) has a dielectric strength of more than 2000 kV / m.

17. The power electronic switching device according to any of claims 1 to 6, characterized in that The insulating molding (4) has an electrical resistivity of more than 1010Ω / m.

18. The power electronic switching device according to any of claims 1 to 6, characterized in that The insulating molding (4) is formed from a material from the material group of liquid-crystalline polymers or from the material group of thermoplastics or from the material group of thermosets.

19. A method for manufacturing a power electronic switching device according to any one of claims 1-18, characterized by, having the following method steps: a) providing a power semiconductor component (5) for a substrate (2), the power semiconductor component (5) being arranged on and electrically conductively connected to a first electrically conductive track (22); b) arranging a three-dimensionally pre-shaped insulating molding (4).

20. The method according to claim 19, characterized in that the following method step is carried out before method step b): arranging a first adhesive substance (80) on an edge region (52) of the power semiconductor component (5) or on a planar section of the insulating molding facing the edge region (52) of the power semiconductor component (5).

21. The method according to claim 19 or 20, characterized in that the following method step is carried out after method step b): subjecting the power electronic switching device to a temperature between 50°C and 200°C.

22. The method according to claim 19 or 20, characterized in that the following method step is carried out after method step b): subjecting the power electronic switching device to a temperature between 80°C and 120°C.

23. The method according to claim 19 or 20, characterized in that the following method step is carried out after method step b): A connection device (3) is arranged for an electrically conductive connection between the electric contact surfaces (540, 542) of the contact areas (54) of the power semiconductor component (5) and the second electrically conductive track (24), wherein the connection device (3) is designed as a wire bond connection or as a film stack, wherein this is formed by an alternating arrangement of at least one electrically conductive film (30, 34) and at least one electrically insulating film (32).

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