Capacitive networks for enhancing high voltage operation of high electron mobility transistors and methods therein
By using a capacitor network to couple the field plate in a high electron mobility transistor, the problems of non-uniform electric field and process complexity in traditional designs are solved, achieving uniform electric field distribution under high voltage and cost reduction.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- POWER INTEGRATIONS INC
- Filing Date
- 2020-06-24
- Publication Date
- 2026-06-02
AI Technical Summary
Traditional field plate designs may result in uneven electric field distribution in high-voltage HEMTs, increasing process costs and complexity. Furthermore, traditional methods require thick dielectrics to support high breakdown voltages.
A capacitor network is used to couple the field plates. The potential of each field plate is predetermined by the capacitor network, and the electric field is uniformly distributed. The field plates are fabricated on the same metal layer to reduce costs.
It achieves a uniform electric field distribution under high voltage, reduces process cost and complexity, and improves device stability and dynamic on-resistance performance.
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Abstract
Citation Information
Patent Citations
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