Method for manufacturing a display device

Abstract

The present invention discloses a method for manufacturing a display device, comprising: forming a first conductive layer in a shielding area of ​​a substrate; forming a modified layer on the first conductive layer, and the thickness of the modified layer is not greater than the thickness of the first conductive layer; forming a second conductive layer on the modified layer, and the thickness of the second conductive layer is not less than the thickness of the first conductive layer; forming a buffer layer on the second conductive layer and a non-shielding area of ​​the substrate; forming a pixel layer on the buffer layer, the pixel layer including a plurality of sub-pixels; forming a covering layer on the pixel layer; separating a portion of the second conductive layer from the modified layer to obtain a display unit, wherein the display unit includes a portion of the covering layer, the pixel layer, a portion of the buffer layer and a portion of the second conductive layer; removing a portion of the second conductive layer on the display unit; and forming a carrier on a portion of the buffer layer of the display unit.

Description

Technical Field

[0001] The invention relates to a method for manufacturing a display device. Background Art

[0002] In the manufacturing process of display devices, in order to make the final display device have a carrier with the desired properties, such as a flexible carrier, the substrate (such as a glass substrate) used in the manufacturing process needs to be separated and then the desired carrier is attached. In order to easily separate the substrate, the current practice is to first form a hydrophobic modified layer on the substrate and then form a metal layer on the modified layer. Since there is a weak bond between the metal layer and the modified layer, the metal layer can be easily separated from the substrate.

[0003] In the device for forming the modified layer, the carrier platform for carrying the substrate must be provided with a perforation that can accommodate the lifting rod, so that the robot arm can take and place the substrate. However, in the process of forming the modified layer, the perforation will affect the electric field distribution of the carrier platform, resulting in poor uniformity of the formed modified layer. Even after the metal layer is separated from the glass substrate, part of the metal layer still remains on the glass substrate, resulting in a decrease in production yield. Therefore, how to improve the uniformity of the modified layer to prevent the metal layer from remaining and improve the production yield is an important issue that needs to be solved at present. Summary of the invention

[0004] The present invention provides a method for manufacturing a display device, which has an improved production yield.

[0005] One embodiment of the present invention provides a method for manufacturing a display device, comprising: forming a first conductive layer on a substrate, wherein the substrate has a shielding area and a non-shielding area, and the first conductive layer is located in the shielding area; forming a modified layer on the first conductive layer, and the thickness of the modified layer is not greater than the thickness of the first conductive layer; forming a second conductive layer on the modified layer, and the thickness of the second conductive layer is not less than the thickness of the first conductive layer, and the first conductive layer and the modified layer and the second conductive layer are stacked on the shielding area of ​​the substrate; forming a buffer layer on the second conductive layer in the shielding area and on the non-shielding area of ​​the substrate; forming a pixel layer on the buffer layer, the pixel layer including a plurality of sub-pixels, each sub-pixel including at least one switching element, at least one display element, and at least one display element. A display element and at least two signal lines, and the switch element includes a first end, a second end and a control end, the first end is electrically connected to the display element, and the second end and the control end are respectively electrically connected to the signal lines; a covering layer is formed on the pixel layer; a portion of the second conductive layer is separated from the modified layer to obtain a display unit, wherein the display unit includes a portion of the covering layer, a portion of the pixel layer, a portion of the buffer layer and a portion of the second conductive layer, and the substrate, the first conductive layer, the modified layer, another portion of the second conductive layer, another portion of the buffer layer, another portion of the pixel layer and another portion of the covering layer are removed; a portion of the second conductive layer on the display unit is removed; and a carrier is formed on a portion of the buffer layer of the display unit.

[0006] In one embodiment of the present invention, the thickness of the first conductive layer is between 10 nm and 100 nm.

[0007] In one embodiment of the present invention, the thickness of the modified layer is smaller than the thickness of the first conductive layer.

[0008] In one embodiment of the present invention, the thickness of the modified layer is between to 10nm.

[0009] In one embodiment of the present invention, the reactants used to form the modified layer may include hydrocarbons, fluorocarbons, or a combination of the above compounds.

[0010] In one embodiment of the present invention, the modified layer contains at least two of carbon, hydrogen, fluorine, silicon, and oxygen.

[0011] In one embodiment of the present invention, the manufacturing method of the display device further includes: placing the substrate on a carrier to form a modified layer, and the carrier includes a plurality of through holes, each of which is used to accommodate a lift pin.

[0012] In one embodiment of the present invention, the manufacturing method of the display device further includes: providing a plasma source, wherein the substrate is located between the plasma source and the supporting platform, and the supporting platform is movable relative to the plasma source.

[0013] In one embodiment of the present invention, the moving speed of the supporting platform is between 1 mm / s and 10 mm / s.

[0014] In an embodiment of the present invention, the manufacturing method of the display device further includes: applying a bias voltage to the first conductive layer during the process of forming the modified layer.

[0015] In one embodiment of the present invention, the thickness of the second conductive layer is greater than the thickness of the first conductive layer.

[0016] In one embodiment of the present invention, the thickness of the second conductive layer is between 10 nm and 1000 nm.

[0017] In one embodiment of the present invention, the step of separating a portion of the second conductive layer from the modified layer comprises: cutting the cover layer, the pixel layer, the buffer layer and the second conductive layer adjacent to the non-shielding area.

[0018] In an embodiment of the present invention, the manufacturing method of the display device further includes: removing a portion of the cover layer on the display unit; and forming a packaging layer on a portion of the pixel layer and the carrier.

[0019] In one embodiment of the present invention, the display element is a self-luminous element or a non-self-luminous element.

[0020] In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below with reference to the accompanying drawings for detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figures 1A to 1J is a cross-sectional schematic diagram of the steps of a method for manufacturing a display device 10 according to an embodiment of the present invention;

[0022] Figure 2 is a cross-sectional schematic diagram of a reaction device for forming a modified layer according to an embodiment of the present invention;

[0023] Figure 3 A partial top view schematic diagram of a pixel layer according to an embodiment of the present invention;

[0024] Figure 4 for Figure 1H A schematic diagram of the measured results of an embodiment of the present invention;

[0025] Figure 5 is a cross-sectional schematic diagram of a display device 20 according to an embodiment of the present invention;

[0026] Figure 6 is a cross-sectional schematic diagram of a step of peeling off the display unit DU' by mechanical force in a manufacturing method of a comparative example;

[0027] Figure 7 for Figure 6 Schematic diagram of the measurement results of the comparative example.

[0028] Explanation of symbols

[0029] 10, 20: Display device

[0030] 110: Substrate

[0031] 120: First conductive layer

[0032] 130: Modified layer

[0033] 140: Second conductive layer

[0034] 140a, 140b: Partial

[0035] 150: Buffer layer

[0036] 150a, 150b: Partial

[0037] 151: Lower surface

[0038] 160: Pixel layer

[0039] 160a, 160b: Partial

[0040] 170: Overlay

[0041] 170a, 170b: Partial

[0042] 180: Carrier board

[0043] 190: Encapsulation layer

[0044] 200: Reaction device

[0045] 210: Plasma source

[0046] 212: Gas source

[0047] 214: Exit

[0048] 220: Loading platform

[0049] 221: Upper surface

[0050] CE: Common Electrode

[0051] CW: Wire

[0052] D1: Direction

[0053] DL: Signal line

[0054] DU, DU': Display unit

[0055] E11, E12, E13, E21, E31, LE: Display components

[0056] FP: Lifting rod

[0057] LS: Laser beam

[0058] MR: Intermediate

[0059] NA: Non-shaded area

[0060] PH: Perforation

[0061] PS: Plasma

[0062] RA: reactant

[0063] SA: Sheltered Area

[0064] SL: Signal line

[0065] SP: Sub-Pixel

[0066] SW: Switching element

[0067] Ta: The first end

[0068] Tb: Second end

[0069] Tc: Control terminal DETAILED DESCRIPTION

[0070] Figures 1A to 1J The cross-sectional view of the steps of the manufacturing method of the display device 10 according to one embodiment of the present invention is shown in FIG.

[0071] First, please refer to Figure 1A , a first conductive layer 120 is formed on the substrate 110. In this embodiment, the substrate 110 may have a shielding area SA and a non-shielding area NA, and the first conductive layer 120 is located in the shielding area SA. In some embodiments, the area on the substrate 110 where the first conductive layer 120 is formed may be defined as the shielding area SA.

[0072] The substrate 110 may be a transparent substrate, and its material may be glass, but the present invention is not limited thereto. In some embodiments, the material of the substrate 110 may also be an opaque / reflective material (eg, a wafer, ceramic, etc.), or other applicable materials.

[0073] The first conductive layer 120 may be formed by chemical vapor deposition or physical vapor deposition. In this embodiment, the first conductive layer 120 may be formed by physical vapor deposition, for example, the first conductive layer 120 may be formed by sputtering. In some embodiments, the first conductive layer 120 may also be formed by a photolithography process and an etching process, so that the first conductive layer 120 has a desired pattern or profile.

[0074] The material of the first conductive layer 120 may include metal, such as copper (Cu), aluminum (Al), molybdenum (Mo), titanium (Ti), silver (Ag), chromium (Cr), or neodymium (Nd), or an alloy of any combination of the above metals. In the present embodiment, the material of the first conductive layer 120 is molybdenum (Mo). The first conductive layer 120 may also use other conductive materials, such as metal nitrides, metal oxides, metal oxynitrides, stacked layers of metals and other conductive materials, or other materials with conductive properties.

[0075] In this embodiment, the thickness of the first conductive layer 120 may be between 10 nm and 100 nm, such as 50 nm, but the invention is not limited thereto. In some embodiments, the thickness of the first conductive layer 120 may be 10 nm, 30 nm, 80 nm or 100 nm.

[0076] Next, please refer to Figure 1B, a modified layer 130 is formed on the first conductive layer 120, and the thickness of the modified layer 130 is not greater than the thickness of the first conductive layer 120, that is, the thickness of the modified layer 130 can be substantially equal to or less than the thickness of the first conductive layer 120. In this embodiment, the thickness of the modified layer 130 is less than the thickness of the first conductive layer 120, and the thickness of the modified layer 130 can be between In some embodiments, the thickness of the modified layer 130 may be between 10 nm and 10 nm, for example, 1 nm, but the present invention is not limited thereto. 2nm or 5nm.

[0077] In this embodiment, plasma can be used to react to form the modified layer 130. For example, please refer to Figure 2 , Figure 2 1 is a cross-sectional schematic diagram of a reaction device 200 for forming a modified layer 130 according to an embodiment of the present invention. The reaction device 200 may include a plasma source 210 and a carrier 220. The plasma source 210 is fluidically connected to a gas source 212 and has an outlet 214. The gas source 212 can supply reactants RA to the plasma source 210, and the intermediate MR formed by the reactants RA in the plasma source 210 can leave the plasma source 210 through the outlet 214. In addition, the reaction device 200 may also include a transmission member (not shown) connected to the carrier 220, so that the carrier 220 can move relative to the plasma source 210.

[0078] In the present embodiment, the carrier 220 may include a plurality of through holes PH, each of which may be used to accommodate a lift pin FP. For example, when the substrate 110 is to be placed on the carrier 220, the robot arm carrying the substrate 110 may be first positioned above the carrier 220, and then the lift pin FP may be raised to protrude from the upper surface 221 of the carrier 220, and the substrate 110 may be supported on the lift pin FP and leave the robot arm. Thereafter, the robot arm may be removed, and the lift pin FP may be lowered. When the top of the lift pin FP returns to the through hole PH and is lower than the upper surface 221 of the carrier 220, the substrate 110 may be positioned on the upper surface 221 of the carrier 220. On the other hand, when the substrate 110 is to be removed, the lift pin FP may be first raised to support the entire substrate 110, and the substrate 110 may be removed from the upper surface 221 of the carrier 220. Then, the robot arm is extended between the lifting rods FP, and the lifting rods FP are lowered back into the through-holes PH, so that the substrate 110 can be carried on the robot arm, and the robot arm takes out the substrate 110.

[0079] When forming the modified layer 130, the substrate 110 formed with the first conductive layer 120 may be placed on the upper surface 221 of the carrier 220. At the same time, the reactant RA entering the plasma source 210 from the gas source 212 may be ionized in the plasma source 210 to form a plasma PS, and the intermediate MR in the plasma PS may leave the plasma source 210 through the outlet 214 of the plasma source 210 and then be deposited on the surface of the first conductive layer 120. Since the carrier 220 can move the substrate 110 relative to the plasma source 210, the intermediate MR may be continuously deposited on the surface of the first conductive layer 120 to form the modified layer 130.

[0080] In this embodiment, the carrier 220 can be moved in the direction D1 under normal pressure so that the substrate 110 moves relative to the plasma source 210 in the direction D1, but the present invention is not limited thereto. The voltage used to form the plasma PS in the plasma source 210 can be between 1 kV and 10 kV, such as 3 kV, but the present invention is not limited thereto. Since the first conductive layer 120 can shield the non-uniform electric field generated by the through hole PH of the carrier 220, the formed modified layer 130 can have good uniformity.

[0081] In some embodiments, when the substrate 110 is located on the carrier 220, the first conductive layer 120 on the substrate 110 may also be electrically connected to the carrier 220 through a wire CW, so that the first conductive layer 120 and the carrier 220 are at the same potential to form a modified layer 130. In addition, the carrier 220 may be further electrically connected to the common electrode CE, so that a bias is applied to the first conductive layer 120 during the formation of the modified layer 130, so that when the voltage of the plasma source 210 is large, a large current in the reaction device 200 is led out, thereby avoiding affecting the uniformity of the electric field in the reaction device 200. In this way, the intermediate MR from the plasma PS can be attracted by the bias of the first conductive layer 120 and directly reach the surface of the first conductive layer 120, so as to ensure that the modified layer 130 has good uniformity.

[0082] In the present embodiment, the modified layer 130 may be a hydrophobic material layer with low surface energy. For example, the material of the modified layer 130 may include a long carbon chain polymer (such as polyalkyl), a fluorine-containing polymer, or a siloxane organic material. Therefore, the reactant RA used to form the modified layer 130 may include a hydrocarbon, a fluorocarbon, a siloxane, or a combination of the above compounds, so that the formed modified layer 130 may contain at least two of carbon, hydrogen, fluorine, silicon, and oxygen. In some embodiments, a carrier gas, such as argon (Ar), may also be input along with the reactant RA to adjust the concentration of the reactant RA, thereby adjusting the reaction rate of the reactant RA and controlling the thickness of the modified layer 130. In the present embodiment, the concentration of the reactant RA may be between 0.01% and 50%, such as 10%, but the present invention is not limited thereto.

[0083] In addition, the thickness of the modified layer 130 can also be controlled by adjusting the flow rate of the reactant RA. The flow rate of the reactant RA can be between 0.1 L / cm and 10 L / cm. For example, in this embodiment, the flow rate of the reactant RA can be about 2 L / cm, but the present invention is not limited thereto. In other embodiments, the flow rate of the reactant RA can be about 4 L / cm or 8 L / cm.

[0084] In addition, the deposition rate of the modified layer 130 can be controlled by the temperature of the substrate 110, thereby adjusting the thickness of the modified layer 130. The temperature of the substrate 110 can be between room temperature and 100°C. For example, in this embodiment, the thickness of the modified layer 130 does not need to be too thick, so the deposition rate of the modified layer 130 does not need to be too fast, and the temperature of the substrate 110 can be at room temperature. In some embodiments, when the thickness of the modified layer 130 needs to be increased, the substrate 110 can be heated by the carrier 220, so that the temperature of the substrate 110 rises to, for example, 80°C, thereby accelerating the deposition rate of the modified layer 130.

[0085] On the other hand, the deposition time of the modified layer 130 can be controlled by adjusting the moving speed of the carrier 220, thereby adjusting the thickness of the modified layer 130. The moving speed of the carrier 220 can be between 1 mm / s and 10 mm / s. For example, in this embodiment, the thickness of the modified layer 130 does not need to be too thick, so the moving speed of the carrier 220 can be about 2 mm / s. In some embodiments, when the thickness of the modified layer 130 needs to be increased, the moving speed of the carrier 220 can be increased to, for example, 8 mm / s.

[0086] Next, please refer to Figure 1C, a second conductive layer 140 is formed on the modified layer 130, and the first conductive layer 120 and the modified layer 130 are stacked with the second conductive layer 140 on the shielding area SA of the substrate 110. The second conductive layer 140 may be formed by chemical vapor deposition or physical vapor deposition. In some embodiments, the second conductive layer 140 may also include a photolithography process and an etching process to allow the second conductive layer 140 to have a desired pattern or profile.

[0087] The thickness of the second conductive layer 140 is not less than the thickness of the first conductive layer 120. In the present embodiment, the thickness of the second conductive layer 140 is greater than the thickness of the first conductive layer 120. In other embodiments, the thickness of the second conductive layer 140 may be substantially equal to the thickness of the first conductive layer 120. The thickness of the second conductive layer 140 may be between 10 nm and 1000 nm. For example, in the present embodiment, the thickness of the second conductive layer 140 may be about 200 nm, but the present invention is not limited thereto. In some embodiments, the thickness of the second conductive layer 140 may be 100 nm, 500 nm, or 800 nm.

[0088] The material of the second conductive layer 140 may include metal, such as copper (Cu), aluminum (Al), molybdenum (Mo), titanium (Ti), silver (Ag), chromium (Cr), or neodymium (Nd), or an alloy of any combination of the above metals. In the present embodiment, the material of the second conductive layer 140 is molybdenum (Mo). The second conductive layer 140 may also use other conductive materials, such as metal nitrides, metal oxides, metal oxynitrides, stacked layers of metals and other conductive materials, or other materials with conductive properties.

[0089] Next, please refer to Figure 1D , a buffer layer 150 is formed on the second conductive layer 140 in the shielding area SA and on the non-shielding area NA of the substrate 110. The buffer layer 150 can prevent impurities from moving into the pixel layer 160 formed subsequently, and enhance the adhesion between the pixel layer 160 and the underlying film layer (such as the second conductive layer 140). The buffer layer 150 can be a single-layer or multi-layer structure, and its material can be an inorganic material (such as silicon oxide, silicon nitride, or silicon oxynitride), an organic material (such as polyimide (PI), polyethylene terephthalate (PET), or polyethylene naphthalate (PEN)), or other suitable materials.

[0090] Next, please refer to Figure 1E , forming a pixel layer 160 on the buffer layer 150, and the pixel layer 160 overlaps the buffer layer 150. Please also refer to Figure 3 , Figure 3 1 is a partial top view of a pixel layer 160 according to an embodiment of the present invention. The pixel layer 160 includes a plurality of sub-pixels SP, and the plurality of sub-pixels SP are arranged in an array. In this embodiment, each sub-pixel SP may include at least one switch element SW, at least one display element LE, and at least two signal lines SL and DL, and the switch element SW may include a first end Ta, a second end Tb, and a control end Tc, the first end Ta of the switch element SW is electrically connected to the display element LE, the second end Tb of the switch element SW is electrically connected to the signal line DL, and the control end Tc of the switch element SW is electrically connected to the signal line SL.

[0091] The signal line SL and the signal line DL can transmit an electrical signal to the switch element SW, the signal line SL is, for example, a scan line, and the signal line DL is, for example, a data line. In the present embodiment, the signal line SL and the signal line DL may be orthogonal to each other, but the present invention is not limited thereto. In some embodiments, the signal line SL and the signal line DL may also intersect at other angles. In some embodiments, each sub-pixel SP may include two or more switch elements SW. In some embodiments, each sub-pixel SP may further include at least one capacitor structure. In the present embodiment, other signal lines such as power lines and common signal lines may be further provided in the pixel layer 160 to provide power signals and common signals to each sub-pixel SP.

[0092] In this embodiment, the display elements LE may be arranged in an array and electrically connected to the first end Ta of the switch element SW. The display elements LE may be electrically connected to one of the plurality of signal lines DL via the switch element SW. The display elements LE (e.g., display elements E11, E12, and E13) in the plurality of sub-pixels SP electrically connected to the same signal line DL may emit light of the same color, and the display elements LE (e.g., display elements E11, E21, and E31) in the plurality of sub-pixels SP electrically connected to the same signal line SL may emit light of different colors.

[0093] In this embodiment, the display element LE may be a self-luminous element, such as an organic light emitting diode (OLED) or a micro light emitting diode (Micro LED), but the present invention is not limited thereto. In some embodiments, the display element LE may be a non-self-luminous element. For example, the display element LE may include a pixel electrode and a non-self-luminous display medium, such as a liquid crystal layer, wherein the switch element SW may individually control the corresponding pixel electrode to drive the liquid crystal molecules in the liquid crystal layer to change direction.

[0094] Next, please refer to Figure 1F, forming a cover layer 170 on the pixel layer 160. The cover layer 170 may be a single layer or a multi-layer structure, and its material may be inorganic materials (e.g., silicon oxide, silicon nitride, or silicon oxynitride), organic materials (e.g., polyimide, polyethylene terephthalate, or polyethylene naphthalate), or other suitable materials.

[0095] Next, please refer to Figure 1G , cutting the cover layer 170, the pixel layer 160, the buffer layer 150 and the second conductive layer 140 adjacent to the non-shielding area NA, wherein the second conductive layer 140 is divided into a portion 140a and a portion 140b, the buffer layer 150 is divided into a portion 150a and a portion 150b, the pixel layer 160 is divided into a portion 160a and a portion 160b, and the cover layer 170 is divided into a portion 170a and a portion 170b. In this embodiment, the above-mentioned cutting can be performed using a laser beam LS, but the present invention is not limited thereto. In other embodiments, the above-mentioned cutting can also be performed along a predetermined cutting line using, for example, a knife or other suitable tools.

[0096] In addition, in this embodiment, since the melting point of molybdenum (Mo) of the first conductive layer 120 is approximately 2600° C., when cutting is performed using the laser beam LS, the first conductive layer 120 will not be melted by the laser beam LS. In this way, the first conductive layer 120 can also prevent the molten glass in the substrate 110 from adhering to the second conductive layer 140.

[0097] Next, please refer to Figure 1H , separate the portion 140a of the second conductive layer 140 from the modified layer 130, and remove the substrate 110, the first conductive layer 120, the modified layer 130, the portion 140b of the second conductive layer 140, the portion 150b of the buffer layer 150, the portion 160b of the pixel layer 160, and the portion 170b of the cover layer 170 to obtain the display unit DU, wherein the display unit DU includes the portion 170a of the cover layer 170, the portion 160a of the pixel layer 160, the portion 150a of the buffer layer 150, and the portion 140a of the second conductive layer 140. In this embodiment, since the portion 140a of the second conductive layer 140 is weakly bonded to the modified layer 130, the separation can be performed by mechanically peeling off the display unit DU, but the present invention is not limited thereto. In some embodiments, the separation can also be performed by laser oxidation of the second conductive layer 140.

[0098] Figure 4 for Figure 1H In the above process of peeling the display unit DU by mechanical force, the load of the mechanical force is measured along with the peeling displacement of the display unit DU, and the result is Figure 4 The measured results are shown. Figure 4 It can be seen that during the process of peeling the display unit DU, the load of the mechanical force does not increase abnormally, which means that a uniform modified layer 130 exists between the portion 140 a of the second conductive layer 140 and the first conductive layer 120 .

[0099] Next, please refer to Fig. 1I , remove the portion 140a of the second conductive layer 140 on the display unit DU, and expose the lower surface 151 of the portion 150a of the buffer layer 150. In this embodiment, the portion 140a of the second conductive layer 140 may be removed by a wet etching process, but the present invention is not limited thereto.

[0100] Next, please refer to Figure 1J , forming a carrier 180 on the lower surface 151 of the portion 150a of the buffer layer 150 of the display unit DU, and completing the production of the display device 10. For example, in the present embodiment, the carrier 180 can be attached to the lower surface 151 of the portion 150a of the buffer layer 150 by an adhesive, but the present invention is not limited to this. In the present embodiment, the width of the carrier 180 is slightly larger than the width of the display unit DU, but the present invention is not limited to this. In some embodiments, the width of the carrier 180 may be substantially equal to or smaller than the width of the display unit DU. In addition, the material of the carrier 180 may include polyimide (PI) or polyethylene (PE), etc., depending on the requirements of the final product.

[0101] Figure 5 FIG. 2 is a cross-sectional view of a display device 20 according to an embodiment of the present invention. Figure 5 In this embodiment, it can be further Figures 1A to 1J The portion 170a of the cover layer 170 is removed from the completed display device 10, and then the encapsulation layer 190 is formed on the portion 160a of the pixel layer 160 and the carrier 180 to complete the production of the display device 20. The encapsulation layer 190 can be a single-layer or multi-layer structure, and the material of each layer can include inorganic materials (for example: silicon oxide, silicon nitride, or silicon oxynitride), organic materials (for example: polyimide, polyethylene terephthalate, or polyethylene naphthalate), or other suitable materials, depending on the requirements of the final product. In some embodiments, the encapsulation layer 190 may include a stack of inorganic materials and organic materials to provide a moisture-proof function. In some embodiments, the encapsulation layer 190 may be a flexible board.

[0102] Figure 6 FIG. 4 is a cross-sectional view of a step of peeling off the display unit DU′ by mechanical force in a manufacturing method of a comparative example. Figure 7 for Figure 6 The measured results of the comparative example. Figures 1A to 1H Compared with the step flow of the manufacturing method shown in FIG. Figure 6The difference of the comparative example shown is that the first conductive layer 120 is not formed in the comparative example, that is, the modified layer 130 is directly formed on the substrate 110 in the comparative example. Figure 7 It is obtained by measuring the change of the load of the mechanical force along with the peeling displacement of the display unit DU' during the process of peeling the display unit DU' by mechanical force. Figure 7 It can be seen that during the peeling process, when the peeling displacement of the display unit DU' is between 22mm and 29mm, the mechanical load increases abnormally. In addition, after the peeling is completed, it can be observed that the second conductive layer 140 remains on the substrate 110, indicating that the uniformity of the modified layer 130 is not good, and the portion 140a of the second conductive layer 140 and the substrate 110 do not form a blanket modified layer 130, resulting in partial contact between the second conductive layer 140 and the substrate 110. Figure 4 and Figure 7 It can be seen from the test results that the first conductive layer 120 helps to improve the uniformity of the modified layer 130 , so that the second conductive layer 140 and the first conductive layer 120 can have a uniform weak bond.

[0103] In summary, the present invention uses the first conductive layer to shield the non-uniform electric field during the formation of the modified layer, so that the formed modified layer can have good uniformity. In this way, the modified layer can form a uniform weak bond between the second conductive layer and the first conductive layer, which is beneficial to the separation of the substrate, thereby improving the production yield.

[0104] Although the present invention is disclosed in conjunction with the above embodiments, they are not intended to limit the present invention. Any person with ordinary knowledge in the technical field may make slight changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the definition of the attached claims.

Claims

1. A method for manufacturing a display device, comprising: Forming a first conductive layer on a substrate, wherein the substrate has a shielding area and a non-shielding area, and the first conductive layer is located in the shielding area; forming a modified layer on the first conductive layer, wherein the thickness of the modified layer is not greater than the thickness of the first conductive layer, and applying a bias voltage to the first conductive layer during the process of forming the modified layer; Forming a second conductive layer on the modified layer, wherein the thickness of the second conductive layer is not less than the thickness of the first conductive layer, and the first conductive layer, the modified layer and the second conductive layer are stacked on the shielding area of ​​the substrate; forming a buffer layer on the second conductive layer in the shielding area and on the non-shielding area of ​​the substrate; A pixel layer is formed on the buffer layer, wherein the pixel layer includes a plurality of sub-pixels, each of the sub-pixels includes at least one switch element, at least one display element and at least two signal lines, and the at least one switch element includes a first end, a second end and a control end, the first end is electrically connected to the at least one display element, and the second end and the control end are electrically connected to the at least two signal lines respectively; forming a covering layer on the pixel layer; Separating a portion of the second conductive layer from the modified layer to obtain a display unit, wherein the display unit includes a portion of the cover layer, a portion of the pixel layer, a portion of the buffer layer, and the portion of the second conductive layer, and removing the substrate, the first conductive layer, the modified layer, another portion of the second conductive layer, another portion of the buffer layer, another portion of the pixel layer, and another portion of the cover layer; removing the portion of the second conductive layer on the display unit; and A carrier is formed on the portion of the buffer layer of the display unit.

2. The method for manufacturing a display device according to claim 1, wherein: The thickness of the first conductive layer is between 10 nm and 100 nm.

3. The method for manufacturing a display device according to claim 1, wherein: The thickness of the modified layer is smaller than the thickness of the first conductive layer.

4. The method for manufacturing a display device according to claim 1, wherein: The thickness of the modified layer is between to 10nm.

5. The method for manufacturing a display device according to claim 1, wherein: The reactants used to form the modified layer include hydrocarbons, fluorocarbons or a combination of the above compounds.

6. The method for manufacturing a display device according to claim 1, wherein: The modified layer contains at least two of carbon, hydrogen, fluorine, silicon, and oxygen.

7. The method for manufacturing a display device according to claim 1, further comprising: The substrate is placed on a carrier to form the modified layer, and the carrier includes a plurality of through holes, each of which is used to accommodate a lifting rod.

8. The method for manufacturing a display device according to claim 7, further comprising: A plasma source is provided, wherein the substrate is located between the plasma source and the carrier, and the carrier is movable relative to the plasma source.

9. The method for manufacturing a display device according to claim 8, wherein: The moving speed of the carrier is between 1 mm / s and 10 mm / s.

10. The method for manufacturing a display device according to claim 1, wherein: The thickness of the second conductive layer is greater than that of the first conductive layer.

11. The method for manufacturing a display device according to claim 1, wherein: The thickness of the second conductive layer is between 10 nm and 1000 nm.

12. The method for manufacturing a display device according to claim 1, wherein: The step of separating the portion of the second conductive layer from the modified layer includes: cutting the cover layer, the pixel layer, the buffer layer and the second conductive layer adjacent to the non-shielding area.

13. The method for manufacturing a display device according to claim 1, further comprising: removing the portion of the cover layer on the display unit; as well as A packaging layer is formed on the portion of the pixel layer and the carrier.

14. The method for manufacturing a display device according to claim 1, wherein: The display element is a self-luminous element or a non-self-luminous element.

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