Microelectromechanical System Package and Method of Forming the Same

Abstract

Various embodiments of the present disclosure are directed to a microelectromechanical system package including a wire bond damper. A housing structure is located on a support substrate, and a microelectromechanical system structure is located between the support substrate and the housing structure. The microelectromechanical system structure includes an anchor, a spring, and a movable mass. The spring extends from the anchor to the movable mass to suspend the movable mass in a cavity between the support substrate and the housing structure and allow it to move. The wire bond damper is located on the movable mass or on a structure surrounding the movable mass. For example, the wire bond damper may be located on the top surface of the movable mass. As another example, the wire bond damper may be located on the support substrate, laterally between the anchor and the movable mass. Additionally, the wire bond damper includes wires formed by wire bonding and configured to suppress impacts on the movable mass. Embodiments of the present invention also relate to a method for forming a microelectromechanical system package.

Description

Technical Field

[0001] Embodiments of the present invention relate to microelectromechanical system packages and methods of forming the same. Background Art

[0002] Microelectromechanical system (MEMS) devices are microscopic devices that integrate mechanical and electrical components to sense physical quantities and / or act on the surrounding environment. In recent years, MEMS devices have become increasingly common. For example, MEMS accelerometers are commonly used in devices such as airbag deployment systems, tablet computers, and smartphones. Summary of the Invention

[0003] According to an embodiment of the present invention, there is provided a microelectromechanical system package, comprising: a support substrate; a housing structure located on the support substrate; a microelectromechanical system structure interposed between the support substrate and the housing structure, wherein the microelectromechanical system structure includes a movable block configured to move in a cavity interposed between the support substrate and the housing structure; and a first wire bonding damper located in the cavity and configured to suppress an impact on the movable block, wherein the first wire bonding damper includes a first wire extending beyond a top surface of the support substrate.

[0004] According to an embodiment of the present invention, there is also provided a microelectromechanical system package, comprising: a support substrate; a housing structure located on the support substrate; a microelectromechanical system structure interposed between the support substrate and the housing structure, wherein the microelectromechanical system structure includes a movable block, an anchor, and a spring, wherein the anchor surrounds the movable block, wherein the spring extends from the anchor to the movable block to suspend the movable block in a cavity interposed between the support substrate and the housing structure, and wherein the movable block is configured to move in the cavity; and a plurality of out-of-plane wire bonding dampers located on the movable block, wherein the out-of-plane wire bonding dampers extend upward from a top surface of the movable block at respective corners of the movable block.

[0005] According to an embodiment of the present invention, there is also provided a method for forming a microelectromechanical system package, wherein the method includes: mounting a support substrate on a package substrate; mounting a microelectromechanical system structure on the support substrate, wherein the microelectromechanical system structure includes a movable block configured to move above the support substrate; performing one or more wire bonding processes to form an in-plane wire bonding damper on the support substrate on one side of the movable block and / or an out-of-plane wire bonding damper on a top surface of the movable block; and mounting a housing structure on the package substrate, wherein the housing structure covers and surrounds the microelectromechanical system structure. Brief Description of the Drawings

[0006] As will be best understood in conjunction with the accompanying drawings, aspects of the present invention can be best understood from the following detailed description. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various components can be increased or decreased arbitrarily.

[0007] Figure 1 Cross-sectional views of some embodiments of a microelectromechanical system (MEMS) package including an out-of-plane (OoP) wire bond damper are provided.

[0008] Figure 2 Provided Figure 1 are cross-sectional views of some embodiments of a MEMS package in which the OoP wire bond damper is absorbing shock.

[0009] Figure 3 Provided Figure 1 are perspective views of some embodiments of the OoP wire bond damper.

[0010] Figure 4 Provided Figure 1 are cross-sectional views of some alternative embodiments of a MEMS package in which the OoP damper wire of the OoP wire bond damper is ribbon-shaped.

[0011] Figure 5 Provided Figure 4 are perspective views of some embodiments of the OoP wire bond damper.

[0012] Figure 6 Provided Figure 1 are cross-sectional views of some alternative embodiments of a MEMS package in which the OoP wire bond damper is a multi-stage damper.

[0013] Fig. 7A And Figure 7B Provided Figure 6 are cross-sectional views of some embodiments of a MEMS package in which the OoP wire bond damper absorbs shock at multiple different stages of the OoP wire bond damper.

[0014] Figure 8 Provided Figure 6 are cross-sectional views of some alternative embodiments of the OoP wire bond damper in which an epoxy layer surrounds the OoP wire of the OoP wire bond damper.

[0015] Fig. 9 And Fig.10 Provided Figure 1 are cross-sectional views of some alternative embodiments of a MEMS package in which the MEMS package has multiple OoP wire bond dampers with different configurations.

[0016] Fig.11 Provided Figure 1 Cross-sectional views of some alternative embodiments of a MEMS package in which an out-of-plane (OoP) wire bond damper is spaced apart from a movable block.

[0017] Fig. 12A and Fig. 12B Provided Figure 1 Cross-sectional views of some alternative embodiments of a MEMS package in which an out-of-plane (OoP) wire bond damper is located below a movable block.

[0018] Fig.13 Provided Figure 1 Cross-sectional views of some alternative embodiments of a MEMS package in which out-of-plane (OoP) wire bond dampers are respectively located above and below a movable block.

[0019] Fig.14 Provided Figure 1 Cross-sectional views of some alternative embodiments of a MEMS package in which the MEMS package includes in-plane wire bond dampers.

[0020] Fig.15 Provided Fig.14 Cross-sectional views of some embodiments of a MEMS package in which in-plane wire bond dampers are absorbing shock.

[0021] Figures 16A-16F Provided Figure 1 Top-down layout views of some alternative embodiments of an out-of-plane (OoP) wire bond damper.

[0022] Fig.17 Provided Figure 1 Magnified cross-sectional views of some embodiments of a MEMS package showing peripheral details.

[0023] Fig.18 Provided Fig.17 Top-down layout views of some embodiments of the MEMS structure and support substrate in .

[0024] Fig.19 Provided Fig.17 Cross-sectional views of some alternative embodiments of a MEMS package in which an epoxy layer surrounds an out-of-plane (OoP) wire bond damper.

[0025] Fig. 20 Provided Fig.19 Top-down layout views of some embodiments of the MEMS structure and support substrate in .

[0026] Fig.21 and Fig. 22 Provided Fig.19 Cross-sectional views of some alternative embodiments of a MEMS package in which the out-of-plane (OoP) wire bond damper varies.

[0027] Fig.23 Provide Fig.17 Cross-sectional views of some alternative embodiments of a MEMS package including an in-plane lead bond damper.

[0028] Fig.24 Provide Fig.23 Top-down layout views of some embodiments of the MEMS structure and the support substrate in

[0029] Fig.25 Provide Fig.17 Cross-sectional views of some embodiments of a MEMS package that more particularly shows the support substrate and the encapsulation substrate.

[0030] Figure 26-Figure 34 Provide a series of cross-sectional views of some embodiments of a method for forming a MEMS package including an OoP lead bond damper.

[0031] Fig.35 Provide Figure 26-Figure 34 Block diagrams of some embodiments of the method in Detailed Description

[0032] The present invention provides many different embodiments or examples for implementing different features of the present invention. Specific examples of components and arrangements will be described below to simplify the present invention. Of course, these are merely examples and are not intended to limit the present invention. For example, in the following description, forming a first component above or on a second component may include embodiments where the first component and the second component are in direct contact, and may also include embodiments where additional components are formed between the first component and the second component such that the first component and the second component are not in direct contact. Also, the present invention may repeat reference numerals and / or letters in various examples. This repetition is for the sake of simplicity and clarity only and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0033] In addition, for ease of description, spatial relationship terms such as "below", "beneath", "lower", "above", "upper", etc. may be used herein to describe the relationship of one element or component to another element or component as shown in the figures. Spatial relationship terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or in other orientations), and the spatial relationship descriptors used herein may be interpreted accordingly.

[0034] A microelectromechanical system (MEMS) package can include a support substrate, a housing structure, and a MEMS structure. The housing structure is located on the support substrate and surrounds the support substrate. The MEMS structure is located between the housing structure and the support substrate. Additionally, the MEMS structure includes a movable mass, a spring, and an anchor. The anchor is fixed, and the spring extends from the anchor to the movable mass to suspend the movable mass in a cavity between the support substrate and the housing structure. During use, the movable mass moves within the cavity. Then, the movement is sensed through capacitive coupling, piezoelectric effect, or some other suitable phenomenon.

[0035] A challenge with MEMS packages is that the MEMS structure is vulnerable to damage from sudden impacts. For example, a sudden impact may cause the movable mass to collide with the housing structure and suffer damage. Such damage may cause the MEMS structure to fail completely or may reduce the performance of the MEMS structure (e.g., sensitivity or some other suitable performance metric). As MEMS packages become smaller and thus more fragile, this challenge is expected to become more prominent. One way to reduce the likelihood of damage from sudden impacts is to increase the stiffness of the spring. However, this reduces the sensitivity of the MEMS structure.

[0036] Various embodiments of the present disclosure are directed to a MEMS package including a wire bond damper, and a method for forming a MEMS package. According to some embodiments, the MEMS package includes a support substrate, a housing structure, a MEMS structure, and a wire bond damper. The housing structure is located on the substrate, and the MEMS structure is located between the support substrate and the housing structure. The MEMS structure includes an anchor, a spring, and a movable mass. The anchor is fixed, and the spring extends from the anchor to the movable mass to suspend the movable mass in a cavity between the support substrate and the housing structure and allow it to move. The wire bond damper is located on the movable mass or on a structure surrounding the movable mass. For example, the wire bond damper can be located on the top surface of the movable mass. As another example, the wire bond damper can be located on the support substrate, laterally between the anchor and the movable mass. Additionally, the wire bond damper includes one or more wires formed by wire bonding and configured to suppress in-plane and / or out-of-plane impacts.

[0037] Due to the wire bond damper, sudden impacts on the MEMS package can be mitigated. For example, a sudden impact may cause the movable mass to accelerate towards the surrounding structure. When the wire bond damper is placed on the movable mass and the movable mass is too close to the surrounding structure, the wire bond damper can contact the surrounding structure and absorb the kinetic energy of the movable mass to prevent damage. When the wire bond damper is offset to one side of the movable mass and the movable mass is too close to the surrounding structure, the wire bond damper can contact the movable mass and absorb the kinetic energy of the movable mass to prevent damage. Since the damping provided by the wire bond damper is independent of the spring, by including the wire bond damper, the sensitivity is not affected, or is affected very little.

[0038] Reference Figure 1 , cross-sectional view 100 of some embodiments of a MEMS package including a plurality of out-of-plane (OoP) wire bond dampers 102 is provided. The OoP wire bond dampers 102 are located on the MEMS structure 104 on the movable mass 104m of the MEMS structure 104 and are respectively located on opposite sides of the movable mass 104m. As will be described in more detail below, the OoP wire bond dampers 102 are configured to absorb the kinetic energy of the movable mass 104m to prevent damage when the movable mass 104m is too close to the upper structure.

[0039] In addition to the movable mass 104m, the MEMS structure 104 also has springs 104s and anchors 104a. The anchors 104a are fixed at the periphery of the MEMS structure 104 and have a pair of segments respectively on opposite sides of the movable mass 104m. The movable mass 104m is movable relative to the anchors 104a within the cavity 106. The springs 104s are respectively located on opposite sides and extend from the segments of the anchors 104a to the movable mass 104m to suspend the movable mass 104m within the cavity 106 and facilitate the movement of the movable mass 104m. The MEMS structure 104 can be, for example, a motion sensor structure, an optical image stabilization (OIS) structure, a microphone structure, or some other suitable type of MEMS structure.

[0040] The support substrate 108 is located below the MEMS structure 104 and is separated from the MEMS structure 104 by a spacer dielectric layer 110. The housing structure 112 covers the OoP wire bond dampers 102, the MEMS structure 104, and the support substrate 108. In addition, the housing structure 112 includes a stopper 112s. The stopper 112s is located on the movable mass 104m in the cavity 106 and is configured to limit the OoP movement of the movable mass 104m to prevent overextension and thus prevent damage to the springs 104s. The OoP movement corresponds to the out-of-plane movement along which the MEMS structure 104 extends. Thus, the OoP movement can be Figure 1Vertical movement within the cross-sectional view 100.

[0041] The out-of-plane (OoP) wirebond damper 102 is configured to suppress OoP movement and includes separate multiple OoP damper wires 114 formed by wirebonding. For example, the first OoP wirebond damper 102a may include multiple first OoP damper wires 114a, and the second OoP wirebond damper 102b may include multiple second OoP damper wires 114b. The OoP damper wires 114 arch between corresponding OoP damper pads 116 that are embedded in the top of the movable block 104m. For example, the first OoP damper wire 114a may arch from a first OoP damper pad embedded in the top to a second OoP damper pad embedded in the top. Since the OoP damper wires 114 arch between the OoP damper pads, the OoP damper wires 114 have an annular profile and can thus also be referred to as annular wires.

[0042] If the movable block 104m is subjected to a sudden shock that causes the movable block 104m to move towards the housing structure 112, one or both of the OoP wirebond dampers 102 may contact the housing structure 112 and absorb the kinetic energy of the movable block 104m. Figure 2 Provided Figure 1 A cross-sectional view 200 of some embodiments of the MEMS package, in which the first OoP wirebond damper 102a contacts the housing structure 112 and absorbs kinetic energy. By absorbing the kinetic energy, the OoP wirebond damper 102 can suppress sudden shocks and prevent the movable block 104m from colliding with the housing structure 112. This can in turn prevent damage to the movable block 104m. Since the damping provided by the OoP wirebond damper 102 is independent of the spring 104s, the sensitivity of the MEMS package is not affected or is minimally affected by including the OoP wirebond damper 102.

[0043] Continuing to refer Figure 1 , the OoP damper wires 114 and the OoP damper pads 116 are conductive and may be, for example, or include gold, copper, silver, aluminum, some other suitable metal, or any combination of the foregoing. In some embodiments, the OoP damper wires 114 and the OoP damper pads 116 are the same material. In other embodiments, the OoP damper wires 114 and the OoP damper pads 116 are different materials. In some embodiments, the OoP damper wires 114 and the OoP damper pads 116 are electrically floating. In other embodiments, the OoP damper wires 114 and the OoP damper pads 116 are grounded or otherwise biased through a conductive path (not shown) in the MEMS structure 104.

[0044] In some embodiments, the out-of-plane (OoP) damper lead 114 has a circular cross-section. The larger the diameter of the OoP damper lead 114, the greater the stiffness of the OoP damper lead 114. Additionally, the smaller the diameter of the OoP damper lead 114, the smaller the stiffness of the OoP damper lead 114. In some embodiments, the OoP damper leads 114 have the same diameter. In alternative embodiments, the OoP damper leads 114 have different diameters. In at least some embodiments, the OoP damper leads 114 have a diameter of about 15 - 50 microns, about 15 - 30 microns, about 30 - 50 microns, or some other suitable value. If the diameter is too small (e.g., less than about 15 microns or some other suitable value), the stiffness of the OoP damper lead 114 may be too small to absorb a significant amount of kinetic energy from the movable block 104m, such that the movable block 104m may collide with the housing structure 112 in response to a sudden shock. If the diameter is too large (e.g., greater than about 50 microns or some other suitable value), the OoP damper lead 114 may have too much stiffness to dampen a sudden shock.

[0045] In alternative embodiments, the OoP damper lead 114 has a rectangular cross-section or some other suitable cross-section. In some embodiments where the OoP damper lead 114 has a rectangular cross-section, the OoP damper lead 114 may be referred to as a ribbon lead. Additionally, in some embodiments where the OoP damper lead 114 has a rectangular cross-section, the OoP damper lead 114 has a width of about 5 - 300 microns, about 5 - 150 microns, about 150 - 300 microns, or some other suitable value. If the width is too small (e.g., less than about 5 microns or some other suitable value), the OoP damper lead 114 may have too little stiffness to provide meaningful damping. On the other hand, if the width is too large (e.g., greater than about 300 microns or some other suitable value), the OoP damper lead 114 may have too much stiffness to provide meaningful damping.

[0046] In some embodiments, the OoP damper lead 114 has a height H of about 50 - 300 microns, about 50 - 175 microns, about 175 - 300 microns, or some other suitable value. If the height H is too small (e.g., less than about 50 microns or some other suitable value), the OoP damper lead 114 may have too short a travel distance to absorb kinetic energy and may not provide meaningful damping. On the other hand, if the height H is too large (e.g., greater than about 300 microns or some other suitable value), the OoP damper lead 114 may have too little stiffness to provide meaningful damping. The larger the height H, the greater the height of the OoP damper lead 114. Additionally, the smaller the height H, the smaller the stiffness of the OoP damper lead 114. In some embodiments, the height H is the same. In other embodiments, the height H is different.

[0047] In some embodiments, the cavity 106 is hermetically sealed outside the cross-sectional view 100 of Figure 1 such that the cavity 106 is separated from the atmosphere on the side of the housing structure 112 opposite the cavity 106. In some embodiments, the housing structure 112 extends along the sidewalls of the MEMS structure 104 and the support substrate 108 to a packaging substrate (not shown) below the support substrate 108. In some embodiments, the housing structure 112 is a polymer or some other suitable type of material.

[0048] In some embodiments, the support substrate 108 is a printed circuit board (PCB) such that the support substrate 108 has a plurality of conductive traces (not shown) and vias (not shown). In other embodiments, the support substrate 108 is an integrated circuit (IC) die or some other suitable type of substrate. Additionally, in other embodiments, the support substrate 108 is a bulk silicon substrate or some other suitable type of semiconductor substrate.

[0049] In some embodiments, the MEMS structure 104 is or includes single-crystalline silicon, polycrystalline silicon, or some other suitable type of semiconductor material. In other embodiments, the MEMS structure 104 is or includes a piezoelectric material or some other suitable type of material. The piezoelectric material can be, for example, or include aluminum nitride, lead zirconate titanate (PZT), or some other suitable type of piezoelectric material. In some embodiments, the MEMS structure 104 includes conductive components embedded therein. For example, most of the MEMS structure 104 can be made of silicon, a piezoelectric material, or some other suitable type of material, and the conductive components can be embedded therein. The conductive components can be, for example, metal wires, doped semiconductor regions, or other suitable types of conductive components.

[0050] In some embodiments, the spacer dielectric layer 110 is silicon oxide and / or some other suitable dielectric. Additionally, in some embodiments, the spacer dielectric layer 110 is a dielectric adhesive or some other suitable material.

[0051] Referring to Figure 3 , there is provided Figure 1 a perspective view 300 of some embodiments of the out-of-plane (OoP) lead bond damper 102. The OoP lead bond damper 102 represents Figure 1 each OoP lead bond damper 102 of Figure 1 and thus is not specifically identified as the first or second OoP lead bond damper 102a, 102b of

[0052] The OoP wire bonding damper 102 includes three OoP damper wires 114. In alternative embodiments, the OoP wire bonding damper 102 has more or fewer OoP damper wires 114. The OoP damper wires 114 arch from a first OoP damper pad 116a to a second OoP damper pad 116b and have a circular cross-section from the first OoP damper pad 116a to the second OoP damper pad 116b. Thus, the OoP damper wires 114 can have a circular cross-section along line A. In alternative embodiments, the OoP damper wires 114 have an oval cross-section or some other suitable cross-section. Additionally, the OoP damper wires 114 have the same size and shape, and are centered and evenly spaced on a common axis. The common axis can extend parallel to line A, for example. In alternative embodiments, the OoP damper wires 114 have different sizes and / or different shapes. Additionally, in alternative embodiments, the OoP damper wires 114 are centered on different axes extending parallel to line A and / or are unevenly spaced along line A.

[0053] In some embodiments, as described above, the diameter of the OoP damper wires 114 is about 15 - 50 microns, about 15 - 30 microns, about 30 - 50 microns, or some other suitable value. The diameter can extend along line A, for example. If the diameter is too small (e.g., less than about 15 microns or some other suitable value), the OoP damper wires 114 may have too little stiffness to provide meaningful damping. If the diameter is too large (e.g., greater than about 50 microns or some other suitable value), the OoP damper wires 114 may have too much stiffness to provide meaningful damping.

[0054] Reference Figure 4 , there is provided Figure 1 a cross-sectional view 400 of some alternative embodiments of a MEMS package, where a first end of the OoP damper wire 114 is fixed to a corresponding OoP damper pad 116, and a second end, opposite the first end respectively, rises above and is spaced apart from a movable block 104m. Additionally, the OoP damper wire 114 has a rectangular cross-section from the first end to the second end. Thus, the OoP damper wire 114 is a ribbon wire.

[0055] In some embodiments, each out-of-plane (OoP) damper lead 114 has a first section and a second section connected end-to-end. The first section extends from the movable block 104m at a first angle α1 with respect to the top surface of the movable block 104m. The second section extends from the first section parallel to the top surface of the movable block 104m or at a second angle less than the first angle with respect to the top surface. In some embodiments, each OoP lead-bonded damper 102 has a separate OoP damper pad 116, and each OoP damper lead 114 of the OoP lead-bonded damper shares the separate OoP damper pad 116.

[0056] Reference Figure 5 , there is provided Figure 4 a perspective view 500 of some embodiments of the OoP lead-bonded damper 102. The OoP lead-bonded damper 102 represents Figure 4 each OoP lead-bonded damper 102 and thus is not specifically identified as Figure 4 the first or second OoP lead-bonded damper 102a, 102b. Further, for simplicity and clarity, the hash is omitted from the movable block 104m, and the OoP damper leads 114 are not shown as solid black.

[0057] The OoP lead-bonded damper 102 includes three OoP damper leads 114. In alternative embodiments, the OoP lead-bonded damper 102 has more or fewer OoP damper leads 114. The OoP damper leads 114 have a rectangular cross-section from a first end at the movable block 104m to a second end opposite the first end. Thus, the OoP damper leads 114 may have a rectangular cross-section along line B. In alternative embodiments, the OoP damper leads 114 have a rectangular cross-section or some other suitable cross-section. Further, the OoP damper leads 114 have the same size and shape, and are centered and evenly spaced on a common axis. The common axis may extend, for example, orthogonally to line B. In alternative embodiments, the OoP damper leads 114 have different sizes and / or different shapes. Further, in alternative embodiments, the OoP damper leads 114 are centered on different axes extending orthogonally to line B and / or are unevenly spaced along line B.

[0058] In some embodiments, the out-of-plane (OoP) damper lead 114 has a width of about 5 - 300 microns, about 5 - 150 microns, about 150 - 300 microns, or some other suitable value. The width can correspond, for example, to a dimension extending parallel to line B. If the width is too small (e.g., less than about 5 microns or some other suitable value), the OoP damper lead 114 may have too little stiffness to provide meaningful damping. On the other hand, if the width is too large (e.g., greater than about 300 microns or some other suitable value), the OoP damper lead 114 may have too much stiffness to provide meaningful damping. In some embodiments, the widths of the OoP damper leads 114 are the same. In other embodiments, the widths of the OoP damper leads 114 are different.

[0059] Reference Figure 6 , there is provided Figure 1 a cross-sectional view 600 of some alternative embodiments of a MEMS package, where the OoP lead bond damper 102 is a multi-stage damper. As such, the OoP lead bond damper 102 includes separate multiple first-stage OoP damper leads 114fs, and also includes separate multiple second-stage OoP damper leads 114ss.

[0060] The first-stage OoP damper leads 114fs and the second-stage OoP damper leads 114ss arch between corresponding OoP damper pads 116 such that the first-stage OoP damper leads 114fs and the second-stage OoP damper leads 114ss have an annular profile and can thus also be referred to as annular leads. In addition, the first-stage OoP damper leads 114fs arch respectively above the second-stage OoP damper leads 114ss. The first-stage OoP damper leads 114fs have a first height Hfs, and the second-stage OoP damper leads 114ss have a second height Hss that is less than the first height Hfs. In addition, the first-stage OoP damper leads 114fs have a cross-sectional profile with a smaller area than the second-stage OoP damper leads 114ss. For example, when the first-stage OoP damper leads 114fs and the second-stage OoP damper leads 114ss have a circular cross-section, the diameter of the first-stage OoP damper leads 114fs can be less than the diameter of the second-stage OoP damper leads 114ss.

[0061] Since the second - stage OoP damper lead 114ss has a smaller height and a larger cross - sectional area compared to the first - stage OoP damper lead 114fs, the stiffness of the second - stage OoP damper lead 114ss is greater than that of the first - stage OoP damper lead 114fs. If the movable block 104m is subjected to a sudden impact that causes the movable block 104m to move towards the housing structure 112, one or both of the OoP lead - bonded dampers 102 can contact the housing structure 112 and absorb the kinetic energy of the movable block 104m. If the sudden impact is less than a threshold amount (e.g., mild), the first - stage OoP damper lead 114fs can fully absorb the kinetic energy. If the sudden impact exceeds the threshold amount (e.g., extreme), the first - stage OoP damper lead 114fs may not be able to fully absorb the kinetic energy. Thus, the second - stage OoP damper lead 114ss can absorb the remaining part of the kinetic energy. Fig. 7A A cross - sectional view 700A of some embodiments of a MEMS package is provided, Figure 6 wherein the first - stage OoP damper lead 114fs contacts the housing structure 112 and absorbs kinetic energy. Additionally, Figure 7B A cross - sectional view 700B of some embodiments of a MEMS package is provided, Figure 6 wherein both the first - stage OoP damper lead 114fs and the second - stage OoP damper lead 114ss contact the housing structure 112 and absorb kinetic energy.

[0062] By absorbing kinetic energy, the OoP lead - bonded damper 102 can suppress sudden impacts and prevent the movable block 104m from colliding with the housing structure 112. This can in turn prevent damage to the movable block 104m. Additionally, by increasing the stiffness from the first - stage OoP damper lead 114fs to the second - stage OoP damper lead 114ss, the damping when the sudden impact is less than the threshold amount is weaker than the damping when the sudden impact is greater than the threshold amount. The weaker damping can then reduce the likelihood of damaging the movable block 104m.

[0063] In some embodiments, the first height Hfs and the second height Hss are related to Figure 1The heights H are the same, except that the first height Hfs is greater than the second height Hss. In some embodiments, the first height Hfs is about 200 - 300 microns, while the second height Hss is about 50 - 150 microns or about 150 - 200 microns. In other embodiments, the first height Hfs is about 150 - 200 microns, while the second height Hss is about 50 - 150 microns. Additionally, in other embodiments, the first height Hfs and the second height Hss have some other suitable values. In some embodiments, the second-stage OoP damper lead 114ss arches between the same OoP damper pads 116 as the adjacent first-stage OoP damper lead 114fs. In alternative embodiments, the second-stage OoP damper lead 114ss arches between OoP damper pads 116 different from the adjacent first-stage OoP damper lead 114fs.

[0064] Although the OoP lead bonding damper 102 is shown in two stages, in alternative embodiments of the OoP lead bonding damper 102, the OoP lead bonding damper 102 can have additional one or more stages of damping. For example, the OoP lead bonding damper 102 can have three stages of damping and thus can include separate multiple third-stage OoP damper leads formed by wire bonding. The third-stage OoP damper leads can be below the second-stage OoP damper leads 114ss. Additionally, the third-stage OoP damper leads can be stiffer than the second-stage OoP damper leads 114ss and can have a smaller height than the second-stage OoP damper leads 114ss.

[0065] Reference Figure 8 , there is provided Figure 6 A cross-sectional view 800 of some alternative embodiments of the OoP lead bonding damper 102, where an epoxy layer 802 surrounds the base of the OoP lead bonding damper 102 respectively. The epoxy layer 802 enhances the strength of the OoP damper leads 114 and thus can prevent excessive deformation of the OoP damper leads 114 when a sudden shock causes the OoP lead bonding damper 102 to contact the housing structure 112.

[0066] Reference Fig. 9 , there is provided Figure 6 A cross-sectional view 900 of some alternative embodiments of the MEMS package, where the first and second OoP lead bonding dampers 102a, 102b are located at the center of the movable block 104m and cooperate to define three-stage damping. As regarding Figure 6As described, the first Out-of-Plane (OoP) lead bonding damper 102a defines a first damping level and a second damping level. In addition, the second OoP lead bonding damper 102b defines a third damping level. Thus, the first OoP lead bonding damper 102a can be considered a multi-level damper, while the second OoP lead bonding damper 102b can be considered a single-level damper.

[0067] The first OoP lead bonding damper 102a includes a plurality of first-level OoP damper leads 114fs and also includes a plurality of second-level OoP damper leads 114ss. The first-level OoP damper leads 114fs and the second-level OoP damper leads 114ss are as described with respect to Figure 6 The second OoP lead bonding damper 102b includes third-level OoP damper leads 114ts formed by wire bonding. In an alternative embodiment, the second OoP lead bonding damper 102b includes more third-level OoP damper leads 114ts. The third height Hts of the third-level OoP damper leads 114ts is less than the second height Hss of the second-level OoP damper leads 114ss. In addition, the third-level OoP damper leads 114ts have a cross-sectional profile with a larger area than the second-level OoP damper leads 114ss. For example, when the third-level OoP damper leads 114ts and the second-level OoP damper leads 114ss have a circular cross-section, the diameter of the third-level OoP damper leads 114ts is larger than that of the second-level OoP damper leads 114ss. Since the third-level OoP damper leads 114ts have a smaller height and a larger cross-sectional area compared to the second-level OoP damper leads 114ss, the third-level OoP damper leads 114ts have a greater stiffness.

[0068] In some embodiments, the first height Hfs, the second height Hss, and the third height Hts are the same as the height H of Figure 1 , except that the first height Hfs is greater than the second height Hss and the second height Hss is greater than the third height Hts. In some embodiments, the first height Hfs is about 200 - 300 microns, the second height Hss is about 150 - 200 microns, and the third height Hts is about 50 - 150 microns. In other embodiments, the first height Hfs, the second height Hss, the third height Hts, or any combination of the foregoing has / have some other suitable values.

[0069] Referring to Fig.10 , there is provided Figure 1Cross-sectional view 1000 of some alternative embodiments of a MEMS package, wherein the first and second out-of-plane (OoP) lead bond dampers 102a, 102b have different configurations. The OoP damper leads 114 of the first OoP lead bond damper 102a arch between the corresponding OoP damper pads 116 and can thus be considered loop leads. Additionally, the OoP damper leads 114 of the first OoP lead bond damper 102a have a circular cross-section. In an alternative embodiment, the OoP damper leads 114 of the first OoP lead bond damper 102a have some other suitable cross-section. The first OoP lead bond damper 102a can be, for example, as described with respect to Figure 1-Figure 3 as described.

[0070] The OoP damper leads 114 of the second OoP lead bond damper 102b have a first end fixed to the corresponding OoP damper pad 116 and a second end that rises above and is spaced apart from the movable block 104m, opposite the first end. Additionally, the OoP damper leads 114 of the second OoP lead bond damper 102b are ribbon leads and thus have a rectangular cross-section from the first end to the second end. In an alternative embodiment, the OoP damper leads 114 of the second OoP lead bond damper 102b have some other suitable cross-section. The second OoP lead bond damper 102b can be, for example, as described with respect to Figure 4 and Figure 5 as described.

[0071] Referring to Fig.11 there is provided Figure 1 Cross-sectional view 1100 of some alternative embodiments of a MEMS package, wherein the OoP lead bond damper 102 is located on the housing structure 112, spaced apart from the movable block 104m. If the movable block 104m gets too close to the housing structure 112 due to a sudden impact, the movable block 104m contacts one or both of the OoP lead bond dampers 102. Then, the OoP lead bond dampers 102 absorb the kinetic energy of the movable block 104m to dampen the impact and prevent damage to the movable block 104m.

[0072] Referring to Fig. 12A and Fig. 12B there is provided Figure 1 Cross-sectional views 1200A and 1200B of some alternative embodiments of a MEMS package, wherein the OoP lead bond dampers 102 are located below the movable block 104m. The support substrate 108 has a top groove located below the movable block 104m and further defining the cavity 106. In an alternative embodiment, the support substrate 108 has a planar profile (e.g., without a top groove), and the thickness of the spacer dielectric layer 110 is increased. In Fig. 12AIn [reference], the out-of-plane (OoP) lead bond damper 102 is located on the movable block 104m and extends downward. In Fig. 12B In [reference], the OoP lead bond damper 102 is located on the support substrate 108 and extends upward.

[0073] Reference Fig.13 , there is provided Figure 1 a cross-sectional view 1300 of some alternative embodiments of the MEMS package of [reference], in which the OoP lead bond dampers 102 are located above and below the movable block 104m, respectively. The OoP lead bond damper 102 located on the movable block 104m is on the movable block 104m, while the OoP lead bond damper 102 below the movable block 104m is spaced apart from the movable block 104m on the support substrate 108. In an alternative embodiment, as shown in Fig.11 , the OoP lead bond damper 102 located on the movable block 104m is on the housing structure 112, and / or as shown in Fig. 12A , the OoP lead bond damper 102 below the movable block 104m is on the movable block 104m.

[0074] Reference Fig.14 , there is provided Figure 1 a cross-sectional view 1400 of some alternative embodiments of the MEMS package of [reference], in which the MEMS package includes a plurality of in-plane lead bond dampers 1402 for suppressing in-plane motion. The in-plane motion corresponds to the motion in and / or along the plane in which the MEMS structure 104 extends. Thus, the in-plane motion can be Fig.14 the lateral (e.g., left-right) motion within the cross-sectional view 1400 of [reference].

[0075] The in-plane lead bond dampers 1402 are respectively located on opposite sides of the movable block 104m and at the sides of the movable block 104m, laterally between the movable block 104m and the anchor 104a. Although springs (e.g., see 104s in Figure 1 ) are not shown, it should be understood that the springs are retained in Fig.14Outside the cross-sectional view 1400. The in-plane wirebond damper 1402 includes separate in-plane damper wires 1404 formed by wirebonding. As shown, each in-plane wirebond damper 1402 has a single in-plane damper wire 1404. However, in alternative embodiments, each in-plane wirebond damper 1402 has more in-plane damper wires 1404. The first ends of the planar damper wires 1404 are respectively fixed to in-plane damper pads 1406 embedded in the top of the support substrate 108. In addition, the in-plane damper wires 1404 have second ends that are raised and spaced apart above the support substrate 108 and opposite to the first ends respectively. The in-plane damper wires 1404 are ribbon wires. Thus, the in-plane damper wires 1404 have a rectangular cross-section from the first end to the second end opposite to the first end respectively. Figure 5 A perspective view of the ribbon wire is provided.

[0076] In some embodiments, each in-plane damper wire 1404 has a first section and a second section connected end to end. The first section extends from the support substrate 108 at a first angle θ1 with respect to the top surface of the support substrate 108. The second section extends orthogonally to the top surface of the support substrate 108 or at a second angle θ2 greater than the first angle θ1 with respect to the top surface from the first section.

[0077] If the movable block 104m is subjected to a sudden impact such that the movable block 104m moves towards one of the in-plane wirebond dampers 1402, then one of the in-plane wirebond dampers 1402 can contact the movable block 104m and can absorb the kinetic energy of the movable block 104m. Fig.15 Provided is Fig.14 A cross-sectional view 1500 of some embodiments of the MEMS package, in which one of the in-plane wirebond dampers 1402 contacts the movable block 104m and absorbs the kinetic energy of the movable block 104m. By absorbing the kinetic energy, the in-plane wirebond damper 1402 can suppress sudden impacts and can prevent the movable block 104m from colliding with the anchor 104a or otherwise overextending the spring (e.g., see Figure 1 104s in

[0078] Reference Figures 16A-16F provides Figure 1 Top view layout diagrams 1600A - 1600F of some alternative embodiments of the OoP wirebond damper 102. The OoP wirebond damper 102 represents Figure 1 any one or each of the OoP wirebond dampers 102, and thus is not specifically identified as Figure 1 the first or second OoP wirebond dampers 102a, 102b.

[0079] In Fig.16A , the OoP damper pads 116 are arranged in two rows and two columns. The rows extend horizontally (e.g., from left to right), while the columns extend vertically (e.g., from top to bottom), and vice versa. In addition, a pair of OoP damper leads 114 are located on the OoP damper pads 116. The OoP damper leads 114 cross each other, and each OoP damper lead 114 arches or extends between diagonally opposite OoP damper pads 116.

[0080] In Fig. 16B , the pattern of Fig.16A is repeated for more rows of OoP damper pads 116 and more columns of OoP damper pads 116. For example, the pattern of Fig.16A is repeated for three rows and five columns. In an alternative embodiment, the pattern of Fig. 16B is repeated for more or fewer rows of OoP damper pads 116 and / or more or fewer columns of OoP damper pads 116.

[0081] In Fig. 16C , the OoP damper pads 116 are in a checkerboard pattern and are interconnected by the OoP damper leads 114. The OoP damper leads 114 arch or extend horizontally between horizontally adjacent OoP damper pads 116 and further arch or extend vertically between vertically adjacent OoP damper pads 116.

[0082] In Fig.16D , the OoP damper pads 116 are arranged in a crosshatch pattern (e.g., lines C and D) similar to a checkerboard pattern. However, the OoP damper pads 116 are spaced along the crosshatch lines. In addition, the OoP damper leads 114 arch or extend horizontally between horizontally adjacent OoP damper pads 116 and further arch or extend diagonally between diagonally adjacent OoP damper pads 116.

[0083] In Fig.16E , the OoP damper pads 116 are in an odd number of rows and an odd number of columns. For example, the OoP damper pads 116 are in three rows and three columns. The rows extend horizontally (e.g., from left to right), while the columns extend vertically (e.g., from top to bottom), and vice versa. In addition, the OoP damper leads 114 arch or otherwise extend from the central OoP damper pad 116c to the remaining OoP damper pads 116. For example, Figure 16A-16E the OoP damper leads 114 can be as described with respect to Figure 1 or some other suitable figure. In addition, Figure 16A-16E the OoP damper leads 114 can be surrounded, for example, by an epoxy layer 802 as shown in Figure 8 .

[0084] In Fig.16FIn [description], the OoP damper pads 116 are arranged in a square annular path and spaced apart along the square annular path. In addition, pairs of OoP damper leads 114 arch or otherwise extend between diagonally opposite OoP damper pads 116 in an eye-shaped pattern. More specifically, pairs of second-stage OoP damper leads 114ss arch or otherwise extend between diagonally opposite OoP damper pads 116 at the corners of the square annular path in an eye-shaped pattern. In addition, pairs of first-stage OoP damper leads 114fs arch or otherwise extend between diagonally opposite OoP damper pads 116 in the remaining portion of the square annular path in an eye-shaped pattern. The first-stage OoP damper leads 114fs and the second-stage OoP damper leads 114ss can be, for example, as described with respect to Figure 6 or some other suitable figure. In addition, Figure 16A-16E the OoP damper leads 114 of [description] can be surrounded, for example, by an epoxy resin layer 802 as shown in Figure 8 .

[0085] Referring to Fig.17 , there is provided an enlarged cross-sectional view 1700 of some embodiments of the MEMS package of Figure 1 , showing peripheral details. The interconnect leads 1702 are formed by wire bonding and extend between interconnect pads 1704 located on the MEMS structure 104 and the support substrate 108, respectively. The interconnect leads 1702 and the interconnect pads 1704 are conductive and can be, for example, the OoP damper leads 114 and the OoP damper pads 116 as described with respect to Figure 1 .

[0086] The package substrate 1706 is located below the support substrate 108, and the housing structure 112 extends along the sidewalls of the MEMS structure 104 and the support substrate 108 to the package substrate 1706. The package substrate 1706 and the housing structure 112 together seal the cavity 106.

[0087] The interconnect leads 1702 and the interconnect pads 1704 can, for example, facilitate electrical coupling from the support substrate 108 to the MEMS structure 104. In addition, although not shown, the support substrate 108 and the package substrate 1706 can, for example, include vias and / or other conductive components to facilitate electrical coupling from outside the MEMS package or from other devices within the MEMS package (e.g., an IC chip or some other suitable device) to the interconnect pads 1704.

[0088] Referring to Fig.18 , there is provided a top view layout diagram 1800 of some embodiments of the MEMS structure 104 and the support substrate 108 of Fig.17 . For example, it can be intercepted along line E in Fig.17Cross-sectional view 1700. The out-of-plane (OoP) wire bond dampers 102 are located at the four corners of the movable block 104m respectively, and include individual OoP damper leads 114 and individual OoP damper pads 116. In alternative embodiments, the OoP wire bond dampers 102 are located at different positions, and / or the MEMS package has more or fewer wire bond dampers.

[0089] The movable block 104m is suspended by springs 104s located on the first opposite sides of the movable block 104m respectively. In addition, the springs 104s extend from the anchors 104a located on the first opposite sides to the movable block 104m. The anchors 104a extend in a closed path to surround the movable block 104m. The movable block 104m and the anchors 104a have separate multiple finger members 1802. The multiple finger members 1802 are located on the second opposite sides of the movable block 104m respectively. In addition, the multiple finger members 1802 of the movable block 104m are interleaved with the multiple finger members 1802 of the anchors 104a on the second opposite sides respectively. In some embodiments, the capacitive coupling between the finger members 1802 of the movable block 104m and the finger members 1802 of the anchors 104a allows the movement of the movable block 104m to be measured.

[0090] Reference Fig.19 , there is provided Fig.17 Cross-sectional view 1900 of some alternative embodiments of the MEMS package of , in which the OoP damper leads 114 arch through the cross-sectional view 1900 (e.g., into and out of the page). In addition, an epoxy layer 802 surrounds the OoP wire bond damper 102. As described above, the epoxy layer 802 enhances the strength of the OoP damper leads 114 and thus can prevent the OoP damper leads 114 from being overly deformed when the OoP wire bond damper 102 contacts the housing structure 112.

[0091] Reference Fig. 20 , there is provided Fig.19 Top view layout 2000 of some embodiments of the MEMS structure 104 and the support substrate 108 in . For example, the cross-sectional view 1900 of can be taken along line F. Fig.19 Cross-sectional view 1900 of .

[0092] Reference Fig.21 and Fig. 22 , there is provided Fig.19 Cross-sectional views 2100, 2200 of some alternative embodiments of the MEMS package of , in which the OoP wire bond dampers 102 are varied. In Fig.21 , the first OoP wire bond damper 102a is associated with Fig.19Identical, but the second out-of-plane (OoP) lead bond damper 102b is a ribbon damper. Thus, the OoP damper lead 114 of the second OoP lead bond damper 102b has a rectangular cross-section from a first end on the movable block 104m to a second end opposite the first end. In Fig. 22 the first and second OoP lead bond dampers 102a, 102b are multi-level lead bond dampers.

[0093] Reference Fig.23 provides Fig.17 cross-sectional views 2300 of some alternative embodiments of the MEMS package of Fig.14 and Fig.15 wherein the MEMS package includes a plurality of in-plane lead bond dampers 1402. The in-plane lead bond dampers 1402 are located on opposite sides of the movable block 104m and on the sides of the movable block 104m, laterally between the movable block 104m and the anchor 104a. The in-plane lead bond dampers 1402 can be, for example, as described with respect to

[0094] Reference Fig.24 provides Fig.23 top-down layout views 2400 of some embodiments of the MEMS structure 104 and the support substrate 108 of Fig.23 . For example,

[0095] the cross-sectional view 2300 of Fig.25 can be taken along the solid portion of line G instead of the dashed portion of line G. The in-plane lead bond dampers 1402 are located at the corners of the movable block 104m and each has a single in-plane damper lead 1404. In alternative embodiments, the in-plane lead bond dampers 1402 are located at different positions and / or have more in-plane damper leads 1404. Fig.17 cross-sectional views 2500 of some embodiments of the MEMS package of

[0096] The encapsulation substrate 1706 includes an encapsulation dielectric layer 2508 and a plurality of vias 2510 that extend from the support substrate 108 through the encapsulation dielectric layer 2508 to the ball grid array (BGA) 2512 below the encapsulation substrate 1706. The BGA 2512 includes a plurality of solder balls 2514 that are electrically coupled to the vias 2510 through an under bump metallization (UBM) layer 2516. The encapsulation dielectric layer 2508 can be, for example, or include silicon oxide, a dielectric polymer, some other suitable material, or any combination of the foregoing. The vias 2510 and the UBM layer 2516 can be, for example, or include metal and / or some other suitable conductive material.

[0097] Although Figure 8 shows Figure 6 an alternative embodiment in which an epoxy resin layer 802 surrounds the OoP lead bond damper 102, but in Figure 1-Figure 5 , Figure 9-11 , Fig. 12A , Fig. 12B , Figure 13-Figure 15 , Figures 16A-16F , Fig.17 , Fig.23 and Fig.25 any one of Figure 8 the OoP lead bond damper 102 can be surrounded by the epoxy resin layer 802, as Fig.11 shown. Although Figure 1 shows Figure 4 , Figure 6 , Figure 8-Figure 10 , Fig.14 , Fig.15 , Fig.17 , Fig.19 , Figure 21-23 and Fig.25 any one of Fig.11 the OoP lead bond damper 102 can be located on the housing structure 112, as Fig. 12A and Fig. 12B shown. Although Figure 1 and Figure 4 , Figure 6 , Figure 8-Figure 10 , Fig.14 , Fig.15 , Fig.17 , Fig.19 , Figure 21-23 and Fig.25 any one of Fig. 12A and Fig. 12Bas shown in any one of. Although Fig.13 shows Figure 1 an alternative embodiment of, in which the OoP lead bond damper 102 is both above and below the movable block, but in Figure 4 , Figure 6 , Figure 8-Figure 10 , Fig.14 , Fig.15 , Fig.17 , Fig.19 , Figure 21-23 and Fig.25 any one of, the OoP lead bond damper 102 can be both above and below the movable block 104m, as Fig.13 shown. Although Fig.14 shows Figure 1 an alternative embodiment of, in which the MEMS package includes an in-plane lead bond damper 1402, but in 4, Figure 6 , Figure 8-Figure 11 , Fig. 12A , Fig. 12B , Fig.13 , Fig.17 , Fig.19 , Fig.21 , Fig. 22 and Fig.25 any one of, the MEMS package can include an in-plane lead bond damper 1402, as Fig.14 shown. Although Figures 16A-16F shows Figure 1 an alternative embodiment of the OoP lead bond damper 102 of, but in Figure 4 , Figure 6 , Figure 8-Figure 11 , Fig. 12A , Fig. 12B , Figure 13-Figure 15 , Fig.17 , Fig.19 , Figure 21-23 and Fig.25 any one of, the OoP lead bond damper 102 can alternatively be as Figures 16A-16F any one of.

[0098] Referring Figure 26-Figure 34 to, a series of cross-sectional views 2600 - 3400 of some embodiments of a method for forming a MEMS package including a lead bond damper are provided. The method and its variations can be used, for example, to form a MEMS package in any one of Figure 1-Figure 11 , Fig. 12A , Fig. 12B , Figure 13-Figure 15 and Figure 17-Figure 25 any one of.

[0099] As Fig.26As shown in the cross-sectional view 2600, the support substrate 108 is arranged and fixed to the package substrate 1706. In other words, the support substrate 108 is mounted on the package substrate 1706. The substrate 108 can be fixed to the package substrate 1706, for example, by an adhesive, by fusion bonding, or by some other suitable mounting method.

[0100] The support substrate 108 includes a plurality of interconnect pads 1704 and a plurality of in-plane damper pads 1406 embedded in the top of the support substrate 108. The interconnect pads 1704 are located at the periphery of the support substrate 108, on opposite sides of the support substrate 108 respectively. The in-plane damper pads 1406 are interposed between the interconnect pads 1704 and are located on opposite sides of the support substrate 108 respectively. The interconnect pads 1704 and the in-plane damper pads 1406 are conductive and can be, for example, or include, metal and / or some other suitable conductive material. In some embodiments, the interconnect pads 1704 are directly connected to and / or electrically coupled to underlying conductive components (not shown). In some embodiments, the in-plane damper pads 1406 are electrically floating. Additionally, in some embodiments, the in-plane damper pads 1406 do not directly contact and / or are not electrically coupled to underlying conductive components (not shown).

[0101] In some embodiments, the support substrate 108 is a PCB. Fig.25 Non-limiting examples of some such embodiments are provided. In other embodiments, the support substrate 108 is an IC die, a bulk silicon substrate, or some other suitable type of substrate. In some embodiments, the package substrate 1706 includes vias and / or other conductive components to facilitate electrical coupling from the underside of the package substrate 1706 to the support substrate 108. Fig.25 Non-limiting examples of some such embodiments are provided.

[0102] As Fig. 27 shown in the cross-sectional view 2700, a first wire bonding process is performed to form a plurality of in-plane wire bonding dampers 1402 on the in-plane damper pads 1406 respectively. The in-plane wire bonding dampers 1402 include individual in-plane damper leads 1404. In some embodiments, each of the in-plane wire bonding dampers 1402 has a single in-plane damper lead 1404. In alternative embodiments, each of the in-plane wire bonding dampers 1402 has a plurality of in-plane damper leads 1404.

[0103] The in-plane damper lead 1404 is a ribbon lead. In this way, the in-plane damper lead 1404 has a rectangular cross-section extending from a first end of the in-plane damper lead 1404 to a second end of the in-plane damper lead 1404 that is opposite the first end, respectively. The first end is fixed to the in-plane damper pad 1406, respectively, and the second end is spaced apart from and elevated above the support substrate 108. Non-limiting examples of ribbon leads are shown in Figure 5 . Each of the in-plane damper leads 1404 has a first section and a second section connected end to end. The first section extends from the support substrate 108 at a first angle θ1 with respect to the top surface of the support substrate 108, and the second section extends from the first section at a second angle θ2 greater than the first angle θ1 with respect to the top surface of the support substrate 108. The in-plane damper lead 1404 can be, for example, or include silver, gold, copper, aluminum, or some other suitable metal.

[0104] As shown in the cross-sectional view 2800 of Fig.28 , the MEMS structure 104 is formed. The MEMS structure 104 has an anchor 104a, a movable block 104m, and a pair of springs (not shown). The anchor 104a is located at the periphery of the MEMS structure 104 and has a pair of sections on opposite sides of the movable block 104m, respectively. The anchor 104a is fixed, and the movable block 104m is movable relative to the anchor 104a. The springs are located outside the cross-sectional view 2800, but non-limiting examples are shown by the springs 104s in Fig.24 . The springs 104s are located on opposite sides of the movable block 104m, respectively, and extend from the sections of the anchor 104a to the movable block 104m, respectively, to suspend the movable block 104m and facilitate the movement of the movable block 104m. The MEMS structure 104 can be, for example, a motion sensor structure, an OIS structure, a microphone structure, or some other suitable type of MEMS structure. In some embodiments, the top layout of the MEMS structure 104 is as shown in Fig.24 such that the cross-sectional view 2800 can be taken along the solid line rather than the dashed part of line G in Fig.24 .

[0105] In some embodiments, the MEMS structure 104 is or includes single-crystalline silicon, polycrystalline silicon, or some other suitable type of semiconductor material. In other embodiments, the MEMS structure 104 is or includes a piezoelectric material or some other suitable type of material. In some embodiments, the MEMS structure 104 includes a conductive component. For example, most of the MEMS structure 104 can be made of silicon, a piezoelectric material, or some other suitable type of material, and the conductive component can be embedded therein. The conductive component can be, for example, a metal wire, a doped semiconductor region, or other suitable types of conductive components.

[0106] A plurality of OoP damper pads 116 and a plurality of additional interconnect pads 1704 are embedded on top of the MEMS structure 104. The additional interconnect pads 1704 are located at the anchors 104a and are respectively on opposite sides of the MEMS structure 104. Additionally, the additional interconnect pads 1704 are electrically coupled to the movable block 104m and / or the conductive components in the movable block 104m through wires and / or paths (not shown) that extend from the additional interconnect pads 1704 through one or two springs to the movable block 104m and / or the conductive components. The OoP damper pads 116 are interposed between the additional interconnect pads 1704, are located at the movable block 104m, and are respectively on opposite sides. The additional interconnect pads 1704 and the OoP damper pads 116 are conductive and can be, for example, or include metal and / or some other suitable conductive material. In some embodiments, the OoP damper pads 116 are electrically floating.

[0107] Also shown by Fig.28 the cross-sectional view 2800 of, the MEMS structure 104 is disposed above and fixed to the support substrate 108 through the spacer dielectric layer 110. In other words, the MEMS structure 104 is mounted to the support substrate 108. The MEMS structure 104 is mounted such that the in-plane wire bond dampers 1402 are respectively on opposite sides of the movable block 104m and are laterally interposed between the anchor 104a and the movable block 104m. In some embodiments, the MEMS structure 104 is fixed to the package substrate 1706 by an adhesive, by fusion bonding, or by some other suitable mounting method. For example, the spacer dielectric layer 110 can be a dielectric adhesive and can be used to adhere the MEMS structure 104 to the support substrate 108.

[0108] As Fig.29 shown in the cross-sectional view 2900 of, a second wire bonding process is performed to form a plurality of interconnect leads 1702 that respectively extend from the interconnect pads 1704 on the anchor 104a to the interconnect pads 1704 on the support substrate 108. The interconnect leads 1702 can be, for example, or include silver, gold, copper, aluminum, or some other suitable metal.

[0109] As Fig.30 shown in the cross-sectional view 3000 of, a third wire bonding process is performed to form a plurality of OoP wire bond dampers 102 on the movable block 104m. The OoP wire bond dampers 102 include separate pluralities of OoP damper leads 114 formed by the third wire bonding process. Additionally, the OoP damper leads 114 are grouped into first-stage OoP damper leads 114fs and second-stage OoP damper leads 114ss.

[0110] The first-stage OoP damper lead 114fs and the second-stage OoP damper lead 114ss arch between the corresponding OoP damper pads 116, such that the first-stage OoP damper lead 114fs and the second-stage OoP damper lead 114ss have an annular profile and can thus also be referred to as annular leads. Additionally, the first-stage OoP damper leads 114fs arch above the second-stage OoP damper leads 114ss, respectively. The first-stage OoP damper lead 114fs has a first height Hfs, and the second-stage OoP damper lead 114ss has a second height Hss that is less than the first height Hfs. Moreover, the first-stage OoP damper lead 114fs has a cross-sectional profile with a smaller area than the second-stage OoP damper lead 114ss. For example, when the first-stage OoP damper lead 114fs and the second-stage OoP damper lead 114ss have a circular cross-section, the diameter of the first-stage OoP damper lead 114fs is less than the diameter of the second-stage OoP damper lead 114ss.

[0111] The OoP damper leads 114 are conductive and can be, for example, or include gold, copper, silver, aluminum, some other suitable metallic element, or any combination of the foregoing. In some embodiments, the OoP damper leads 114 are electrically floating. In alternative embodiments, the second-stage damper leads 114ss are omitted. In alternative embodiments, the OoP damper leads 114 are ribbon leads.

[0112] In some embodiments, the first height Hfs is about 200 - 300 microns, while the second height Hss is about 50 - 150 microns or about 150 - 200 microns. In some embodiments, the first height Hfs is about 150 - 200 microns, while the second height Hss is about 50 - 150 microns. In other embodiments, the first height Hfs and the second height Hss have some other suitable values. In some embodiments, the second-stage OoP damper leads 114ss arch between the same damper pads 116 as the adjacent first-stage OoP damper leads 114fs. In alternative embodiments, the second-stage OoP damper leads 114ss arch between damper pads 116 that are different from the adjacent first-stage OoP damper leads 114fs.

[0113] As Fig.31 shown in the cross-sectional view 3100 of, an epoxy resin layer 802 is deposited on the OoP lead bonding damper 102, respectively. The epoxy resin layer 802 enhances the strength of the OoP damper leads 114 and can thus prevent excessive deformation of the OoP damper leads 114 during damping. In alternative embodiments, the epoxy resin layer 802 is not formed.

[0114] As Fig.32As shown in the cross-sectional view 3200, a housing structure 112 is formed and further disposed and fixed on the package substrate 1706 to form and seal the cavity 106. In some embodiments, the housing structure 112 is fixed to the package substrate 1706 by an adhesive, by fusion bonding, or by some other suitable mounting method. The housing structure 112 also has a stopper 112s located above the movable block 104m to prevent the movable block from overextending and damaging the spring of the movable block 104m (e.g., see Fig.24 104s). The housing structure 112 can be, for example, or include, a polymer, silicon, some other suitable material, or any combination of the foregoing.

[0115] In some embodiments where the housing structure 112 is a polymer, the housing structure 112 can be formed by molding. In some embodiments where the housing structure 112 is silicon, the housing structure 112 can be formed by providing a bulk silicon substrate and patterning the bulk silicon substrate by semiconductor manufacturing processes.

[0116] In an alternative embodiment, the OoP wire bond damper 102 is as shown and described in any one of Figure 1-Figure 5 , Figure 9-Figure 15 , Figures 16A-16F , Fig.17 , Fig.18 and Figure 23-Figure 25 . In an alternative embodiment, a third wire bond process is performed prior to the installation in Fig.28 to form the OoP wire bond damper 102 on the underside of the MEMS structure 104 as shown in Fig. 12A . In an alternative embodiment, a third wire bond process is performed prior to the installation in Fig.28 to form the OoP wire bond damper 102 on the support substrate 108 as shown in Fig. 12B . In an alternative embodiment, a third wire bond process is performed between the formation of the housing structure 112 and the installation of the housing structure 112 to form the OoP wire bond damper 102 on the underside of the housing structure 112 as shown in Fig.11 . In an alternative embodiment, a second wire bond process is performed after the third wire bond process. In an alternative embodiment, the second-stage OoP damper lead 114ss is formed by the second wire bond process, and the first-stage OoP damper lead 114fs and the interconnect 1702 are formed together by the third wire bond process.

[0117] As shown in Fig.33As shown in the cross-sectional view 3300, the MEMS structure 104 is subjected to a sudden shock, pushing the movable block 104m towards the first in-plane wire bond damper 1402a. As a result, the movable block 104m contacts the first in-plane wire bond damper 1402a. The first in-plane wire bond damper 1402 deforms and absorbs the kinetic energy of the movable block 104m to suppress the sudden shock. If the sudden shock instead pushes the movable block 104m towards the second in-plane wire bond damper 1402b, the kinetic energy will be similarly absorbed.

[0118] By absorbing the kinetic energy and by suppressing the sudden shock, the in-plane wire bond damper 1402 can prevent the movable block 104m from colliding with the anchor 104a, and thus can prevent damage to the movable block 104m. Since the in-plane wire bond damper 1402 provides damping independent of the spring of the MEMS structure 104 (see, for example, Fig.24 104s in

[0119] As Fig.34 shown in the cross-sectional view 3400 of Fig. 7A and Figure 7B the first out-of-plane (OoP) wire bond damper 102a of

[0120] the MEMS structure 104 is subjected to another sudden shock, pushing the movable block 104m towards the housing structure 112. As a result, the first OoP wire bond damper 102a contacts the housing structure 112. The first OoP wire bond damper 102a deforms and absorbs the kinetic energy of the movable block 104m to suppress the sudden shock. If the second OoP wire bond damper 102b additionally or alternatively contacts the housing structure 112, the second OoP wire bond damper 102b will similarly deform and absorb the kinetic energy. Since the OoP wire bond damper 102 is a multi-stage damper, the OoP wire bond damper 102 can suppress sudden shocks of multiple magnitudes. As shown, the sudden shock is absorbed only by the first-stage OoP damper lead 114fs. If the sudden shock exceeds a threshold amount, the second-stage OoP damper lead 114ss will further absorb some of the shock. See, for example, Fig.24 and the first OoP wire bond damper 102a of

[0121] Although some embodiments of the reference method describe Figure 26-Figure 34 , it should be understood that Figure 26-Figure 34 the structure shown is not limited to the method, but can be separate from the method. Although Figure 26-Figure 34 is described as a series of actions, it should be understood that in other embodiments, the order of the actions can be changed. Although Figure 26-Figure 34 is shown and described as a specific set of actions, some of the actions shown and / or described can be omitted in other embodiments. Additionally, actions not shown and / or described can be included in other embodiments.

[0122] Referring to Fig.35 , block diagram 3500 of some embodiments of the method of Figure 26-Figure 34 is provided.

[0123] At 3502, a support substrate is mounted on a package substrate, where the support substrate includes an interconnect pad and an in-plane damper pad, where the interconnect pad is embedded at the top of the support substrate at the periphery of the support substrate, and where the in-plane damper pad is embedded at the top between the interconnect pads. For example, see Fig.26 .

[0124] At 3504, a first wire bonding process is performed to form in-plane wire bond dampers on the in-plane damper pads respectively. For example, see Fig. 27 .

[0125] At 3506, a movable structure is mounted on the support substrate, where the movable structure includes an anchor, a movable block, and a spring extending from the anchor to the movable block to suspend the movable block, where the movable structure further includes additional interconnect pads and OoP damper pads embedded at the top of the movable structure at the anchor and the movable block respectively, and where the movable structure is mounted such that the in-plane wire bond dampers are between the anchor and the movable block. For example, see Fig.28 .

[0126] At 3508, a second wire bonding process is performed to form interconnect wires that interconnect the interconnect pads and the additional interconnect pads respectively. For example, see Fig.29 .

[0127] At 3510, a third wire bonding process is performed to form OoP wire bond dampers on the OoP damper pads respectively. For example, see Fig.30 .

[0128] At 3512, an epoxy layer is deposited around the base of the OoP wire bond dampers respectively. For example, see Fig.31 .

[0129] At 3514, a housing structure is mounted on a package substrate and covers the MEMS structure, where the housing structure and the package substrate define a cavity, and the movable block is configured to move within the cavity. For example, see Fig.32 .

[0130] At 3516, the MEMS structure is subjected to a sudden shock, where the in-plane wirebond damper and / or the OoP wirebond damper absorb the kinetic energy of the movable block to suppress the sudden shock and prevent damage to the movable block. For example, see Fig.33 and Fig.34 .

[0131] Although the block diagram 3500 of Fig.35 is shown and described herein as a series of actions or events, it should be understood that the order of these steps or events shown should not be construed in a limiting sense. For example, some steps may occur in a different order and / or concurrently with other actions or events other than those shown and / or described herein. Additionally, not all of the actions shown may be required to implement one or more aspects or embodiments described herein, and one or more of the actions shown herein may be carried out in one or more separate actions and / or phases.

[0132] In some embodiments, the present disclosure provides a MEMS package, comprising: a support substrate; a housing structure located on the support substrate; a MEMS structure interposed between the support substrate and the housing structure, wherein the MEMS structure includes a movable block configured to move within a cavity interposed between the support substrate and the housing structure; and a first wire bonding damper located within the cavity and configured to suppress impacts on the movable block, wherein the first wire bonding damper includes a first wire extending beyond the top surface of the support substrate. In some embodiments, the first wire bonding damper is located above the top surface of the movable block and extends upward from the top surface of the movable block, and is configured to suppress vertical impacts on the movable block. In some embodiments, the MEMS structure includes an anchor and a spring, wherein the spring extends from the anchor to the movable block to suspend the movable block, wherein the first wire bonding damper extends upward from the top surface of the support substrate, laterally between the anchor and the movable block, and is configured to suppress lateral impacts on the movable block. In some embodiments, the first wire arches from a first position on the top surface of the movable block to a second position on the top surface of the movable block. In some embodiments, the first wire bonding damper includes a second wire arching from a third position on the top surface of the movable block to a fourth position on the top surface of the movable block, wherein the first position and the third position are adjacent, wherein the second position and the fourth position are adjacent, and wherein the first wire and the second wire have different heights. In some embodiments, the first wire bonding damper includes a second wire arching from a third position on the top surface of the movable block to a fourth position on the top surface of the movable block, wherein the first position and the third position are adjacent, wherein the second position and the fourth position are adjacent, and wherein the first wire and the second wire have different cross-sectional areas. In some embodiments, the first wire extends upward from a first position on the top surface of the movable block and terminates at a second position spaced apart from and elevated above the top surface of the movable block. In some embodiments, the first wire has a rectangular cross-section from the first position to the second position. In some embodiments, the first wire has a first section and a second section connected end to end, wherein the first section extends upward from the top surface of the movable block at a first angle relative to the top surface, wherein the second section extends parallel to the top surface or at a second angle from the first section relative to the top surface, and wherein the second angle is less than the first angle. In some embodiments, the first wire bonding damper includes an epoxy resin layer surrounding the base of the first wire bonding damper.

[0133] In some embodiments, the present disclosure provides a MEMS package, comprising: a support substrate; a housing structure located on the support substrate; a MEMS structure interposed between the support substrate and the housing structure, wherein the MEMS structure includes a movable block, an anchor, and a spring, wherein the anchor surrounds the movable block, wherein the spring extends from the anchor to the movable block to suspend the movable block in a cavity between the support substrate and the housing structure, and wherein the movable block is configured to move in the cavity; and a plurality of out-of-plane wire bond dampers located on the movable block, wherein the out-of-plane wire bond dampers extend upwardly from the top surface of the movable block at the corners of the movable block, respectively. In some embodiments, the MEMS package further includes an in-plane wire bond damper that extends upwardly from the top surface of the support substrate and is laterally interposed between the anchor and the movable block. In some embodiments, the in-plane wire bond damper includes a first wire, wherein the first wire has a first section and a second section connected end to end, wherein the first section extends upwardly at a first angle with respect to the top surface of the support substrate, wherein the second section extends from the first section at a second angle with respect to the top surface, and wherein the second angle is greater than the first angle. In some embodiments, the MEMS structure includes a first metal pad embedded in the top surface of the movable block, wherein the plurality of first out-of-plane wire bond dampers includes a strip lead, the first end of the strip lead being fixed to the first metal pad and the second end being elevated on the movable block. In some embodiments, the MEMS structure includes a first metal pad and a second metal pad, wherein the first metal pad and the second metal pad are embedded in the top surface of the movable block, and wherein the plurality of first out-of-plane wire bond dampers includes a lead that arches from the first metal pad to the second metal pad. In some embodiments, the first wire bond damper and / or the second wire bond damper is electrically floating.

[0134] In some embodiments, the present disclosure provides a method for forming a MEMS package, wherein the method includes: mounting a support substrate on a package substrate; mounting a MEMS structure on the support substrate, wherein the MEMS structure includes a movable block configured to move above the support substrate; performing one or more wire bonding processes to form an in-plane wire bonding damper on the support substrate at one side of the movable block and / or an out-of-plane (OoP) wire bonding damper on the top surface of the movable block; and mounting a housing structure onto the package substrate, wherein the housing structure covers and surrounds the MEMS structure. In some embodiments, one or more wire bonding processes form an in-plane wire bonding damper on the support substrate, wherein the in-plane wire bonding damper is configured to suppress lateral impact on the movable block. In some embodiments, one or more wire bonding processes form an OoP wire bonding damper on the top surface of the movable block, wherein the OoP wire bonding damper is configured to suppress vertical impact on the movable block. In some embodiments, one or more wire bonding processes form an OoP wire bonding damper including an adjacent first arched wire and second arched wire on the top surface of the movable block, wherein the first arched wire overlaps with the second arched wire and has a greater height than the second arched wire.

[0135] The components of several embodiments have been discussed above so that those skilled in the art can better understand the various embodiments of the present invention. Those skilled in the art should understand that it is easy to use the present invention as a basis to design or change other processes and structures to achieve the same purpose and / or realize the same advantages as the embodiments introduced in the present invention. Those skilled in the art should also realize that these equivalent structures do not depart from the spirit and scope of the present invention, and various changes, substitutions, and alterations can be made without departing from the spirit and scope of the present invention.

Claims

1. A microelectromechanical system package, comprising: A support substrate; A housing structure located on the support substrate; A microelectromechanical system structure disposed between the support substrate and the housing structure, wherein the microelectromechanical system structure includes a movable block configured to move within a cavity between the support substrate and the housing structure; and A first wire bonding damper located in the cavity and configured to suppress impact on the movable block, wherein the first wire bonding damper includes a first wire, wherein the first wire arches from a first position on the top surface of the movable block to a second position on the top surface of the movable block, and the first position and the second position are laterally spaced apart.

2. The MEMS package according to claim 1, wherein, The first wire bonding damper is located above the top surface of the movable block and extends upward from the top surface of the movable block, and is configured to suppress vertical impact on the movable block.

3. The MEMS package according to claim 1, wherein, The microelectromechanical system structure includes an anchor and a spring, wherein the spring extends from the anchor to the movable block to suspend the movable block. The first wire bonding damper extends upward from the top surface of the support substrate, is laterally between the anchor and the movable block, and is configured to suppress lateral impact on the movable block.

4. The MEMS package according to claim 1, wherein, The microelectromechanical system structure includes a first metal pad and a second metal pad on the top surface of the movable block, and the first position is at the first metal pad and the second position is at the second metal pad.

5. The MEMS package according to claim 1, wherein, The first wire bonding damper includes a second wire that arches from a third position on the top surface of the movable block to a fourth position on the top surface of the movable block, wherein the first position and the third position are adjacent, wherein the second position and the fourth position are adjacent, and wherein the first wire and the second wire have different heights.

6. The MEMS package according to claim 4, wherein, The first wire bonding damper includes a second wire that arches from a third position on the top surface of the movable block to a fourth position on the top surface of the movable block, wherein the first position and the third position are adjacent, wherein the second position and the fourth position are adjacent, and wherein the first wire and the second wire have different cross-sectional areas.

7. The MEMS package according to claim 1 further comprises: A second wire bonding damper, including a second wire that extends upward from the top surface of the movable block, wherein the second wire extends upward from a third position on the top surface of the movable block and terminates at a fourth position spaced apart from and elevated above the top surface of the movable block.

8. The MEMS package according to claim 7, wherein, The first wire has a rectangular cross-section from the first position to the second position.

9. The MEMS package according to claim 7, wherein, The first wire has a first section and a second section connected end to end, wherein the first section extends upward from the top surface of the movable block at a first angle relative to the top surface, wherein the second section is parallel to the top surface or extends from the first section at a second angle relative to the top surface, and wherein the second angle is less than the first angle.

10. The MEMS package according to claim 1, wherein, The first wire bonding damper includes an epoxy resin layer surrounding the base of the first wire bonding damper.

11. A microelectromechanical system package, comprising: A support substrate; A housing structure located on the support substrate; A microelectromechanical system structure disposed between the support substrate and the housing structure, wherein the microelectromechanical system structure includes a movable block, an anchor, and a spring, wherein the anchor surrounds the movable block, wherein the spring extends from the anchor to the movable block to suspend the movable block in a cavity between the support substrate and the housing structure, and wherein the movable block is configured to move within the cavity; and A plurality of out-of-plane wire bond dampers located on the movable block, wherein the out-of-plane wire bond dampers extend upward from the top surface of the movable block at the corners of the movable block, respectively, wherein the microelectromechanical system structure includes a first metal pad and a second metal pad, wherein the first metal pad and the second metal pad are embedded in the top surface of the movable block, and wherein the plurality of out-of-plane wire bond dampers include leads that arch from the first metal pad to the second metal pad, and the first metal pad and the second metal pad are laterally spaced apart.

12. The microelectromechanical system package according to claim 11, further comprising: An in-plane wire bond damper extending upward from the top surface of the support substrate, laterally between the anchor and the movable block.

13. The MEMS package according to claim 12, wherein, The in-plane wire bond damper includes a first lead, wherein the first lead has a first section and a second section connected end to end, wherein the first section extends upward at a first angle relative to the top surface of the support substrate, wherein the second section extends from the first section at a second angle relative to the top surface, and wherein the second angle is greater than the first angle.

14. The MEMS package according to claim 11, wherein, The microelectromechanical system structure further includes a third metal pad embedded in the top surface of the movable block, and wherein the plurality of out-of-plane wire bond dampers further include a strip lead, a first end of the strip lead is fixed to the third metal pad, and a second end is elevated on the movable block.

15. The MEMS package according to claim 12, wherein, The in-plane wire bond damper is configured to suppress lateral impact on the movable block.

16. The MEMS package according to claim 11, wherein, The first metal pad and the second metal pad are electrically floating.

17. A method for forming a microelectromechanical system package, wherein, The method includes: Mounting a support substrate on a package substrate; Mounting a microelectromechanical system structure on the support substrate, wherein the microelectromechanical system structure includes a movable block configured to move above the support substrate, and further includes a first metal pad and a second metal pad, the first metal pad and the second metal pad are located on the top surface of the movable block and are laterally spaced from each other; Performing one or more wire bonding processes to form out-of-plane wire bond dampers on the top surface of the movable block; and Mounting a housing structure to the package substrate, wherein the housing structure covers and surrounds the microelectromechanical system structure, Among them, the out-of-plane wire bonding damper includes a first arched wire, wherein the first wire bonding process of the one or more wire bonding processes forms the first arched wire that continuously arches from direct contact with the first metal pad to direct contact with the second metal pad.

18. The method according to claim 17, wherein, The one or more wire bonding processes also form an in-plane wire bonding damper on the support substrate and on the side surface of the movable block, and wherein the in-plane wire bonding damper is configured to suppress lateral impact on the movable block.

19. The method according to claim 17, wherein, The out-of-plane wire bonding damper is configured to suppress vertical impact on the movable block.

20. The method according to claim 17, wherein, The one or more wire bonding processes also form a second arched wire adjacent to the first arched wire on the top surface of the movable block, and wherein the first arched wire overlaps with the second arched wire and has a greater height than the second arched wire.

Images