A texture recognition substrate, manufacturing method and device thereof

Abstract

The present invention provides a texture recognition substrate, a manufacturing method, and an apparatus thereof. The texture recognition substrate comprises a base substrate and a plurality of texture sensing units arranged in an array on the base substrate. Each texture sensing unit comprises a light collector and a reflection enhancement unit located on the side of the light collector facing away from the base substrate. The reflection enhancement unit is configured to reflect at least a portion of ambient light. This improves the accuracy of texture recognition under strong light.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a texture recognition substrate, a manufacturing method and a device thereof. Background Art

[0002] Existing in-display fingerprint recognition technologies that combine optical sensing with displays typically employ a display backplane coupled with an amorphous silicon PIN device. In high-brightness environments, such as on sunny days outdoors, stray light from natural sunlight can easily saturate the photosensitive device, making it unable to distinguish the signal differences between valleys and ridges in fingerprints, thus interfering with normal fingerprint recognition. Improving fingerprint recognition accuracy in strong light conditions has become an urgent technical challenge. Summary of the Invention

[0003] The present invention provides a texture recognition substrate, a manufacturing method and a device thereof, which are used to improve the texture recognition accuracy under strong light.

[0004] In a first aspect, an embodiment of the present invention provides a texture recognition substrate, comprising:

[0005] A base substrate and a plurality of texture sensing units arranged in an array on the base substrate;

[0006] Each texture sensing unit includes a photosensitive collector and a reflection enhancement portion located on a side of the photosensitive collector away from the substrate, and the reflection enhancement portion is used to reflect at least part of ambient light from the outside.

[0007] In one possible implementation manner, the orthographic projection of the reflection enhancing portion on the substrate at least partially falls within the region of the orthographic projection of the photosensitive collector on the substrate.

[0008] In one possible implementation manner, the reflection enhancement portion includes a plurality of strip-shaped reflection structures with equal width and equal spacing and extending in the same direction.

[0009] In one possible implementation manner, the texture recognition substrate further includes a reverse bias voltage line located on a side of the photosensitive collector facing away from the base substrate, and each of the strip-shaped reflective structures is manufactured on the same layer as the reverse bias voltage line.

[0010] In one possible implementation manner, the reflection enhancement portion includes a plurality of protrusion structures arranged in an array.

[0011] In one possible implementation manner, the end portion of each protruding structure facing away from the substrate is designed to be arc-shaped in a direction away from the photosensitive collector.

[0012] In one possible implementation manner, the plurality of protrusion structures are made of photoresist.

[0013] In a second aspect, an embodiment of the present invention further provides a texture recognition device, comprising: a texture recognition substrate as described in any one of the above items.

[0014] In a third aspect, an embodiment of the present invention further provides a method for manufacturing a texture recognition substrate as described in any one of the above items, comprising:

[0015] forming a plurality of the photosensitive collectors arranged in an array on the substrate;

[0016] The reflection enhancement portion is formed on a side of each of the photosensitive collectors that is away from the substrate.

[0017] In one possible implementation manner, forming the reflection enhancement portion on a side of each of the photosensitive collectors facing away from the substrate includes:

[0018] Coating a metal film on a side of each of the photosensitive collectors facing away from the substrate;

[0019] A plurality of strip-shaped reflective structures with equal width and equal spacing and extending in the same direction are carved on a side of the metal film away from the base substrate to form the reflection enhancement portion including the plurality of strip-shaped reflective structures.

[0020] In one possible implementation manner, forming the reflection enhancement portion on a side of each of the photosensitive collectors facing away from the substrate includes:

[0021] Coating a whole layer of photoresist on the side of each photosensitive collector facing away from the substrate;

[0022] exposing and developing the photoresist to form a plurality of columnar structures arranged in an array on a side of each of the photosensitive collectors facing away from the substrate;

[0023] The plurality of columnar structures are heat-treated to form the reflection enhancing portion including a plurality of protrusion structures.

[0024] The beneficial effects of the present invention are as follows:

[0025] An embodiment of the present invention provides a texture recognition substrate, a manufacturing method and a device thereof, wherein the texture recognition substrate includes a base substrate and a plurality of texture sensing units arranged in an array on the base substrate, each texture sensing unit includes a photosensitive collector and a reflection enhancement portion located on the side of the photosensitive collector facing away from the base substrate, and the reflection enhancement portion can reflect at least part of the ambient light from the outside. In this way, even in strong light, the reflection enhancement portion can reduce the total amount of light entering the photosensitive collector, avoiding the problem of saturation of the photosensitive collector under strong light, thereby improving the texture recognition accuracy under strong light. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 Schematic diagram of the volt-ampere characteristic curve of the device with conventional I layer thickness in the related art;

[0027] Figure 2 Schematic diagram of the volt-ampere characteristic curve of the device when the thickness of the I layer is reduced in the related art;

[0028] Figure 3 A schematic diagram of a top view of a texture recognition substrate provided by an embodiment of the present invention;

[0029] Figure 4 For the Figure 3 A schematic diagram of one of the cross-sectional structures shown in the MM direction;

[0030] Figure 5 A schematic diagram of one structure of a texture recognition substrate provided by an embodiment of the present invention;

[0031] Figure 6 A schematic diagram of one structure of a texture recognition substrate provided by an embodiment of the present invention;

[0032] Figure 7 A schematic diagram of a circuit structure corresponding to each texture sensing unit in a texture recognition substrate provided by an embodiment of the present invention;

[0033] Figure 8 To follow Figure 3 Schematic diagram of one of the cross-sectional structures in the middle MM direction;

[0034] Figure 9 A schematic structural diagram of a texture recognition device provided by an embodiment of the present invention;

[0035] Figure 10 A flow chart of a method for manufacturing a texture recognition substrate provided by an embodiment of the present invention;

[0036] Figure 11 for Figure 10 Flowchart of the method for step S102;

[0037] Figure 12 for Figure 10 Flowchart of the method for step S102 in FIG.

[0038] Description of reference numerals:

[0039] 1-substrate; 2-texture sensing unit; 3-photosensitive collector; 4-reflection enhancement unit; 41-strip reflective structure; Vbias-reverse bias voltage line; 42-protrusion structure; 5-switch controller; GA-sampling control terminal; RD-signal readout terminal; VB-reverse bias voltage terminal. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. And in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. Based on the described embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0041] Unless otherwise defined, technical or scientific terms used in this invention shall have the same general meaning as those generally understood by persons skilled in the art in the art to which this invention pertains. Words such as "include" or "comprise" used in this invention mean that the elements or objects preceding the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0042] It should be noted that the sizes and shapes of the figures in the accompanying drawings do not reflect the actual scale and are only for the purpose of illustrating the present invention. The same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions.

[0043] In related technologies, the external quantum efficiency (EQE) of a PIN device structure can be reduced by reducing the thickness of the I layer, thereby ensuring that the PIN device structure is not easily saturated under strong light, thereby achieving the purpose of distinguishing between bright and dark states.

[0044] However, as the thickness of the I layer decreases, the non-uniformity of the film becomes more obvious and the impact on the device becomes more serious; for example, the thickness uniformity of the process film deposition is The conventional I layer thickness is The effect of film uniformity on the device is very small, but thinning to After that, the film thickness fluctuation reaches 10%, and the impact on the device will be seriously amplified. Figure 1 and Figure 2 As shown, Figure 1 Schematic diagram of the volt-ampere characteristic curve of the device with conventional I layer thickness, Figure 2 This is a schematic diagram of the volt-ampere characteristic curve of the device when the thickness of the I layer is reduced. Figure 2 The diagram on the right is an enlarged diagram of the dotted box in the diagram on the left. Specifically, as the thickness of the I layer decreases, the voltage range where the device reverse current is stable is severely reduced. According to the capacitance formula: Where A represents the area of ​​the PN junction in the device; α jrepresents the impurity concentration gradient in the device, ε represents the dielectric constant, V D It is the contact potential difference of the PN junction in the device, and V represents the external voltage applied to the device (i.e., reverse bias voltage). In order to ensure that the device still has a high capacitance storage capacity, a larger reverse bias voltage is required. This reverse bias voltage is generally set to be slightly smaller than the current mutation voltage. Due to the uneven thickness of the I layer, the mutation voltage of the thinner one is smaller. For example, in actual products, for the same reverse bias voltage of -3.0v, the relatively thin I layer device reaches the mutation voltage at -2.9v, and a very large current value will be generated at -3.0v. The current at this position may increase by orders of magnitude with the change of reverse bias voltage, and it is very easy to have a response with a very high current value, resulting in a bright spot with no difference between bright and dark states, resulting in more bad points in fingerprint recognition.

[0045] In view of this, embodiments of the present invention provide a texture recognition substrate, a manufacturing method and a device thereof, for improving the texture recognition accuracy under strong light.

[0046] Combine Figure 3 and Figure 4 As shown, Figure 3 This is a schematic diagram of a top view of a texture recognition substrate provided by an embodiment of the present invention. Figure 4 For the Figure 3 A schematic diagram of a cross-sectional structure shown in the MM direction, the texture recognition substrate includes:

[0047] A base substrate 1 and a plurality of texture sensing units 2 arranged in an array on the base substrate 1;

[0048] Each texture sensing unit 2 includes a light-sensitive collector 3 and a reflection enhancement portion 4 located on a side of the light-sensitive collector 3 facing away from the base substrate 1 . The reflection enhancement portion 4 is used to reflect at least part of ambient light from the outside.

[0049] In a specific implementation, the base substrate 1 in the texture recognition substrate can be a rigid substrate or a flexible substrate, which is not limited here. A plurality of texture sensing units 2 arranged in an array on the base substrate 1 can be provided according to actual application needs, which is not limited here.

[0050] For each texture sensing unit 2, it includes a photosensor 3 and a reflection enhancement part 4 located on the side of the photosensor 3 away from the substrate 1, wherein the photosensor 3 can be used to collect texture data, and the photosensor 3 generally adopts PIN to realize its function; through the reflection enhancement, at least part of the ambient light from the outside can be reflected, reducing the total amount of light entering the photosensor 3, and can avoid the problem of saturation of the photosensor 3 under strong light without reducing the thickness of the I layer and keeping the EQE unchanged, thereby improving the accuracy of strong light texture recognition.

[0051] Still combined Figure 4 As shown, the orthographic projection of the reflection-enhancing portion 4 on the substrate 1 at least partially falls within the orthographic projection of the light collector 3 on the substrate 1. In a specific implementation, the orthographic projection of the reflection-enhancing portion 4 on the substrate 1 can either completely or partially fall within the orthographic projection of the light collector 3 on the substrate 1. In this way, the reflection-enhancing portion 4 effectively reduces the amount of ambient light entering the light collector 3, thereby improving the accuracy of high-light texture recognition.

[0052] In the embodiment of the present invention, the reflection enhancement part 4 can be arranged in the following two ways, but is not limited to the following two ways.

[0053] In one embodiment, Figure 5 As shown, the reflection enhancing portion 4 includes multiple strip-shaped reflective structures 41 of equal width and spacing, extending in the same direction. In a specific implementation, the reflection enhancing portion 4 may include multiple strip-shaped reflective structures 41 of equal width and spacing, extending in the same direction, thereby forming a reflective grating structure. Each strip-shaped reflective structure 41 may be formed based on a metal film layer. Furthermore, the width of each strip-shaped reflective structure 41 and the spacing between adjacent strip-shaped reflective structures 41 may be set according to actual application needs to obtain a reflection enhancing portion 4 with different transmittances, which is not limited here.

[0054] Still combined Figure 5 As shown, the texture recognition substrate also includes a reverse bias voltage line Vbias located on the side of the photosensitive collector 3 facing away from the base substrate 1. Each of the strip-shaped reflective structures 41 is fabricated on the same layer as the reverse bias voltage line Vbias. In a specific implementation, the reverse bias voltage line Vbias can provide a corresponding reverse bias voltage to the corresponding texture sensing unit 2. Each strip-shaped reflective structure 41 can be fabricated on the same layer as the reverse bias voltage line Vbias. That is, each strip-shaped reflective structure 41 is fabricated simultaneously with the reverse bias voltage line Vbias, thereby reducing manufacturing costs.

[0055] In one embodiment, Figure 6As shown, the reflection enhancement portion 4 includes a plurality of protrusion structures 42 arranged in an array. The specific number of the plurality of protrusion structures 42 can be set according to actual application needs and is not limited here. The plurality of protrusion structures 42 increases the reflection area of ​​the side of the photosensitive collector 3 facing away from the substrate 1 to the external ambient light, reduces the total amount of external ambient light entering the photosensitive collector 3, thereby avoiding saturation of the photosensitive collector 3 in strong light and improving the recognition accuracy of strong light textures. In addition, the plurality of protrusion structures 42 can be evenly distributed, ensuring uniform reflection of the external ambient light by the side of the photosensitive collector 3 facing away from the substrate, ensuring that each photosensitive collector 3 generates the same light signal under the same conditions, and improving the texture collection accuracy of the texture sensing unit 2. The "same" here does not mean completely the same, but can be approximately the same or roughly the same.

[0056] Still combined Figure 6 As shown, the end of each protruding structure away from the base substrate 1 is designed to be arc-shaped in a direction away from the light-sensitive collector 3. In this way, the reflection area of ​​the reflection enhancement part 4 to the external ambient light is increased.

[0057] In this embodiment of the present invention, the plurality of protrusions 42 are made of photoresist. Because photoresist can absorb some light, the plurality of protrusions 42 made of photoresist can effectively reduce the total amount of light entering the light collector 3, thereby avoiding the saturation problem of the light collector 3 under strong light conditions and improving the texture recognition accuracy of the texture recognition substrate under strong light conditions.

[0058] In the embodiment of the present invention, Figure 7 The circuit structure diagram corresponding to each texture sensing unit 2 is shown. The texture recognition substrate further includes a switch controller 5 coupled to the photosensitive collector 3. The first electrode of the switch controller 5 is coupled to the first electrode of the photosensitive collector 3, the second electrode is coupled to the signal readout terminal RD, and the gate is coupled to the sampling control terminal GA. The second terminal of the photosensitive collector 3 is coupled to the reverse bias voltage terminal VB. The switch controller 5 can control the texture acquisition of the photosensitive collector 3 under the control of the control signal applied to the sampling control terminal GA. In addition, the switch controller 5 can include a transistor, which can be a thin film transistor (TFT) or a metal oxide semiconductor field effect transistor (MOS), and the transistor can be an N-type transistor or a P-type transistor, and the transistor can have different functions depending on the type of transistor and the signal at the signal terminal. For example, the first electrode can be the source electrode and the second electrode can be the drain electrode. For another example, the first electrode can be the drain electrode and the second electrode can be the source electrode, and the transistor can be the drain electrode.

[0059] Furthermore, at least some of the film layers in the switch controller 5 are fabricated on the same layer as the film layers associated with the display function, thereby ensuring that the texture recognition substrate has both texture recognition and display functions. In this case, the texture recognition substrate may include a plurality of sub-pixels arranged in an array, with at least one texture sensing unit 2 disposed in a light-transmitting region between two adjacent sub-pixels. The texture recognition substrate may include a light-emitting functional layer and a drive circuit layer. The switch controller 5 may be fabricated on the same layer as the drive circuit layer located in the display region, thereby simplifying the manufacturing process and reducing manufacturing costs. The light-emitting functional layer may include an anode, a pixel defining layer, an organic light-emitting layer, and a cathode. The drive circuit layer may include transistors and storage capacitors constituting the pixel drive circuit. The film layers associated with the light-emitting functional layer and the drive circuit layer may be described in the relevant art and will not be further described here.

[0060] It should be noted that the texture recognition substrate provided in the embodiment of the present invention has Figure 4 In addition to the relevant film layers shown in , other film layers may also be included; Figure 8 Shown along Figure 3 A schematic diagram of a cross-sectional structure in the MM direction, wherein the switch controller 5 may include a buffer layer (Buffer) arranged on the substrate 1, an active layer (P-Si) arranged on the buffer layer (Buffer), a gate insulating layer (GI) covering the active layer (P-Si), a gate electrode (Gate) arranged on the gate insulating layer (GI), an interlayer insulating layer (ILD) covering the gate electrode (Gate), a via hole opened on the interlayer insulating layer (ILD), the via hole exposing the active layer (P-Si), a first source electrode and a first drain electrode arranged on the interlayer insulating layer (ILD), The first source electrode and the first drain electrode are connected to the active layer (P-Si) through vias, respectively, and the first passivation layer (PVX1), the first flat layer (PLN1) and the second passivation layer (PVX2) of the aforementioned structure are sequentially covered. The first passivation layer (PVX1), the first flat layer (PLN1) and the second passivation layer (PVX2) are provided with vias, and the vias expose the first drain electrode (SD1). The second source-drain electrode (SD2) arranged on the second passivation layer (PVX2) is connected to the first drain electrode (SD1) through the vias; subsequently, the second source-drain electrode is coupled to the second pole of the photosensitive collector 3.

[0061] In a specific implementation, the buffer layer (Buffer), gate insulating layer (GI), interlayer insulating layer (ILD), first passivation layer (PVX1), and second passivation layer (PVX2) can be made of any one or more of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON), and can be a single layer, multiple layers, or a composite layer. The active layer thin film can be made of amorphous indium gallium zinc oxide (a-IGZO), zinc oxynitride (ZnON), indium zinc tin oxide (IZTO), amorphous silicon (a-Si), polycrystalline silicon (p-Si), sexithiophene, or polythiophene. In other words, the embodiments of the present invention are applicable to transistors manufactured based on oxide technology, silicon technology, or organic technology.

[0062] In addition, after the photosensitive collector 3 and its first electrode are manufactured, a protective layer (Cover) covering the first electrode of the photosensitive collector 3 may be provided. A via is provided in the portion of the protective layer directly above the photosensitive collector 3, through which the first electrode of the photosensitive collector 3 is exposed, so as to reserve space for the reverse bias voltage line Vbias later. The protective layer may be made of any one or more of silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON), and may be a single layer, a multilayer, or a composite layer. After the first electrode of the photosensitive collector 3 is manufactured, a second planar layer (PLN2) covering the first electrode of the photosensitive collector 3 and an adhesion layer (PAS) covering the second planar layer may be provided. Then, on the adhesion layer (P A reverse bias voltage line Vbias is provided on the side of the buffer layer (Buffer) facing away from the substrate 1. The reverse bias voltage line Vbias is coupled to the first electrode of the photosensor through a via penetrating the relevant film layer. The structural stability between the reverse bias voltage line Vbias and the second flat layer (PLN2) is ensured by the adhesion layer (PAS). A light shielding layer (LS) is also provided between the buffer layer (Buffer) and the substrate 1. The light shielding layer (LS) can be made of a metal material such as molybdenum. The positive projection of the active layer (P-Si) on the substrate 1 completely falls within the area of ​​the positive projection of the light shielding layer (LS) on the substrate 1. The light shielding layer (LS) effectively avoids interference of external ambient light on the switch controller 5, thereby ensuring the performance of the texture recognition substrate. In addition, other structures in the texture recognition substrate can refer to the design in the relevant technology and will not be described in detail here.

[0063] Based on the same inventive concept, Figure 9 As shown, an embodiment of the present invention provides a texture recognition device, which solves the problem based on a principle similar to that of the texture recognition substrate. Therefore, the implementation of the texture recognition device can refer to the implementation of the aforementioned texture recognition substrate, and the repeated parts will not be repeated.

[0064] In specific implementations, the pattern recognition device provided by the embodiments of the present invention can be a mobile phone, or any product or component with a display function, such as a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, or a navigation system. The other essential components of the pattern recognition device are well understood by those skilled in the art and are not detailed here, nor should they be construed as limitations of the present invention.

[0065] Based on the same inventive concept, Figure 10 As shown, an embodiment of the present invention further provides a method for manufacturing the texture recognition substrate as described above, the manufacturing method comprising:

[0066] S101: forming a plurality of light-sensitive collectors arranged in an array on the substrate;

[0067] S102: forming the reflection enhancement portion on a side of each of the photosensitive collectors facing away from the substrate.

[0068] In the specific implementation process, the specific implementation process of step S101 to step S102 is as follows:

[0069] First, a plurality of photosensitive collectors 3 arranged in an array are formed on the base substrate 1. For example, an N-layer structure, an I-layer structure and a P-layer structure are sequentially deposited on each photosensitive collector 3 in a direction away from the base substrate 1. The specific manufacturing process can refer to the description in the relevant technology. Then, a reflection enhancement portion 4 is formed on the side of each photosensitive collector 3 away from the base substrate 1. In this way, the reflection of the external ambient light on the side of the photosensitive collector 3 away from the base substrate 1 is increased by the reflection enhancement portion 4, thereby reducing the total amount of light entering the photosensitive collector 3, avoiding saturation of the photosensitive collector 3 under strong light, and improving the texture recognition accuracy under strong light.

[0070] In the embodiment of the present invention, Figure 11 As shown, step S102: forming the reflection enhancement portion on the side of each of the photosensitive collectors away from the substrate, comprising:

[0071] S201: coating a metal film on a side of each of the photosensitive collectors facing away from the substrate;

[0072] S202: Scribing a plurality of strip-shaped reflective structures with equal width and equal spacing and extending in the same direction on a side of the metal film away from the base substrate to form the reflection enhancement portion including the plurality of strip-shaped reflective structures.

[0073] In the specific implementation process, the specific implementation process of step S201 to step S202 is as follows:

[0074] First, a metal film is plated on the side of each photosensitive collector 3 facing away from the substrate 1. This can be done by plating a whole layer of metal film on the side of the second flat layer covering the photosensitive collector 3 facing away from the substrate 1. Then, a plurality of strip-shaped reflective structures 41 having equal width and equal spacing and extending in the same direction are scribed on the side of the metal film facing away from the substrate 1. This can be done by etching the metal film to form a reverse bias voltage line Vbias, and at the same time, a plurality of strip-shaped reflective structures 41 having equal width and equal spacing and extending in the same direction are scribed, thereby simplifying the manufacturing process.

[0075] In the embodiment of the present invention, Figure 12 As shown, step S102: forming the reflection enhancement portion on the side of each of the photosensitive collectors away from the substrate, comprising:

[0076] S301: coating a whole layer of photoresist on a side of each of the photosensitive collectors facing away from the substrate;

[0077] S302: exposing and developing the photoresist to form a plurality of columnar structures arranged in an array on a side of each of the photosensitive collectors facing away from the substrate;

[0078] S303: performing heat treatment on the plurality of columnar structures to form the reflection enhancing portion including a plurality of protrusion structures.

[0079] In the specific implementation process, the specific implementation process of step S301 to step S303 is as follows:

[0080] First, a whole layer of photoresist is coated on the side of each photosensitive collector 3 away from the substrate 1, which can be a whole layer of photoresist plated on the side of the second flat layer covering the photosensitive collector 3 away from the substrate 1; then, the photoresist is exposed and developed to form a plurality of columnar structures arranged in an array on the side of each photosensitive collector 3 away from the substrate 1, which can be patterned using a mask plate process to form a plurality of columnar structures arranged in an array on the side of each photosensitive collector 3 away from the substrate 1; then, the plurality of columnar structures are heat-treated to form a coating. The reflection enhancement portion 4 includes a plurality of protrusion structures 42, wherein the end portion of each protrusion structure 42 facing away from the base substrate 1 is designed in an arc shape in the direction away from the photosensitive collector 3. On the one hand, the roughness of the surface of the photosensitive collector 3 is increased, and the reflection area of ​​the reflection enhancement portion 4 to the external ambient light is increased. On the other hand, the external ambient light is absorbed by the photoresist, that is, the external ambient light has a certain amount of light loss when passing through the plurality of protrusion structures 42 made of photoresist, thereby reducing the total amount of light entering the photosensitive collector 3, avoiding the problem of strong light saturation, and improving the texture recognition accuracy under strong light.

[0081] An embodiment of the present invention provides a texture recognition substrate, a manufacturing method and a device thereof, wherein the texture recognition substrate includes a base substrate 1 and a plurality of texture sensing units 2 arranged in an array on the base substrate 1, each texture sensing unit 2 includes a photosensitive collector 3 and a reflection enhancement portion 4 located on the side of the photosensitive collector 3 facing away from the base substrate 1. The reflection enhancement portion 4 can reflect at least part of the ambient light from the outside. In this way, even in strong light, the reflection enhancement portion 4 can reduce the total amount of light entering the photosensitive collector 3, avoiding the problem of saturation of the photosensitive collector 3 under strong light, thereby improving the texture recognition accuracy under strong light.

[0082] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0083] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A texture recognition substrate, characterized in that: include: A base substrate and a plurality of texture sensing units arranged in an array on the base substrate; Each texture sensing unit includes a light-sensitive collector and a reflection enhancement portion located on a side of the light-sensitive collector facing away from the substrate, wherein the reflection enhancement portion is used to reflect at least part of the ambient light from the outside; the light-sensitive collector adopts a PIN device structure; The reflection enhancement portion includes a plurality of strip-shaped reflective structures with equal width and equal spacing extending in the same direction, and the strip-shaped reflective structures are reflective grating structures; or the reflection enhancement portion includes a plurality of protrusion structures arranged in an array.

2. The texture recognition substrate according to claim 1, wherein: The orthographic projection of the reflection enhancement portion on the substrate at least partially falls within the region of the orthographic projection of the photosensitive collector on the substrate.

3. The texture recognition substrate according to claim 1, wherein: The pattern recognition substrate further includes a reverse bias voltage line located on a side of the photosensitive collector away from the base substrate, and each of the strip-shaped reflective structures is manufactured on the same layer as the reverse bias voltage line.

4. The texture recognition substrate according to claim 1, wherein: The end portion of each protrusion structure facing away from the base substrate is designed to be arc-shaped in a direction away from the photosensitive collector.

5. The texture recognition substrate according to claim 4, wherein: The plurality of protrusion structures are made of photoresist.

6. A texture recognition device, characterized in that: include: The texture recognition substrate according to any one of claims 1 to 5.

7. A method for manufacturing a texture recognition substrate according to any one of claims 1 to 5, characterized in that: include: forming a plurality of the photosensitive collectors arranged in an array on the substrate; The photosensitive collector adopts a PIN device structure; forming the reflection enhancement portion on a side of each of the photosensitive collectors away from the substrate; The reflection enhancement portion includes a plurality of strip-shaped reflective structures with equal width and equal spacing extending in the same direction, and the strip-shaped reflective structures are reflective grating structures; or the reflection enhancement portion includes a plurality of protrusion structures arranged in an array.

8. The production method according to claim 7, characterized in that: The forming of the reflection enhancement portion on a side of each of the photosensitive collectors facing away from the substrate includes: Coating a metal film on a side of each of the photosensitive collectors away from the substrate; A plurality of strip-shaped reflective structures with equal width and equal spacing and extending in the same direction are carved on a side of the metal film away from the base substrate to form the reflection enhancement portion including the plurality of strip-shaped reflective structures.

9. The production method according to claim 7, wherein: The forming of the reflection enhancement portion on a side of each of the photosensitive collectors away from the substrate includes: Coating a whole layer of photoresist on the side of each photosensitive collector facing away from the substrate; exposing and developing the photoresist to form a plurality of columnar structures arranged in an array on a side of each of the photosensitive collectors facing away from the substrate; The plurality of columnar structures are heat-treated to form the reflection enhancing portion including a plurality of protrusion structures.

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